Radio frequency semiconductor package

Abstract

Disclosed is a radio frequency (RF) semiconductor package comprising a feedback circuit unit, the RF semiconductor package comprising: a board for heat dissipation; at least one amplification element mounted on the board; a substrate which has at least one cavity that encompasses all or each of the at least one amplification element, and which is bonded onto the board; at least one pair of a first terminal and a second terminal formed on the substrate and within the edge of the substrate, the terminals facing each other; at least one pair of third terminals formed on the substrate, within the edge of the substrate, and in an orientation different from that of the first and second terminals; and the feedback circuit unit formed on the substrate so as to extend from one side of the first terminal to another side of the third terminals through an electrical connection, wherein the feedback circuit unit includes at least one passive element independently selected from the group consisting of a resistor, an inductor, and a capacitor.

Description

RF semiconductor package

[0001] The present disclosure relates to a broadband radio frequency (RF) semiconductor package, and more particularly, to an RF semiconductor package that implements and optimizes broadband RF performance by improving the structure for heat dissipation and protection of an amplifier element used in a mobile communication system, etc.

[0002] The rapid expansion of the mobile communications market and increasing user demand, as well as in broadcasting and other communications systems, has made signal amplification within high-frequency bands a critical challenge. RF amplifiers amplify and transmit input signals. Efficiently dissipating heat generated by active components during this process is a critical factor in determining the performance and lifespan of these components. Furthermore, because active components are composed of semiconductors, external protection is also a crucial factor.

[0003] Conventional RF semiconductor package structures are manufactured by performing hole-drilling and seat-drilling processing (punching, etc.) to attach a plate to a substrate and a heat sink, and then attaching the plate to the hole or seat through expensive brazing, etc., but this has the disadvantage of causing additional costs and deteriorating the performance of the amplifier element due to processing tolerance issues, as illustrated in Fig. 1a.

[0004] In addition, in the case of heat sinks using relatively expensive alloys, there was a problem that the heat dissipation efficiency was reduced because the heat dissipation path length increased because a certain thickness was required to secure the heat dissipation effect and minimize deformation of the plate material.

[0005] To address these issues, the present disclosure proposes a structure for an RF semiconductor package that reduces the length of the heat dissipation path to enhance heat dissipation and facilitates changes to the internal structure to support a variety of frequency bands. The semiconductor package structure according to the present disclosure, illustrated in Fig. 1b, not only eliminates the space-related losses incurred in the manufacturing of conventional package structures and the additional losses due to tolerances between the PCB and the mechanism (Fig. 1a), but also reduces manufacturing costs and time. Furthermore, it allows for the application of various substrate materials, thereby increasing the degree of freedom in circuit configuration and enabling immediate response to specific mobile communication requirements. Furthermore, it also has the advantage of reducing the memory effect, a phenomenon that causes distortion or delay in frequency signals, through resonance, thereby ensuring stable operation without signal distortion. In particular, the present disclosure employs a PCB substrate, thereby easily securing a diversity of permittivity, enhancing design freedom, and enabling easy optimization of performance in high-frequency bands.

[0006] Prior art literature

[0007] Patent documents

[0008] Patent Document 1: KR 10-1995229 B

[0009] Patent Document 2: KR 10-2012-0072394 A

[0010] Patent Document 3: KR ​​10-2020-0052067 A

[0011] Patent Document 4: KR 10-2018-0131986 A

[0012] The present disclosure aims to solve various problems that arise in the structure of conventional RF semiconductor packages. The conventional problems are, first, a decrease in heat dissipation efficiency. That is, the heat sink of the conventional package has a relatively large thickness, so heat dissipation is not smooth, which negatively affects the performance and lifespan of the amplifier element. Second, the problem of processing cost and tolerance. That is, during the processing process for attaching the plate to the substrate and the heat sink, not only additional processing costs but also material costs such as the use of alloys for heat dissipation are incurred, and if the processing tolerance is large, the performance of the amplifier element is affected. Third, limitations in design changes. That is, in the case of conventional packages, for each change in design, a separate mold for manufacturing the heat dissipation plate and auxiliary materials must be manufactured. This makes it difficult to respond quickly to technological advancements such as mobile communications. Fourth, limitations in permittivity. That is, conventional ceramic substrates have a relatively fixed permittivity, making it difficult to respond to various frequency bands, which limits performance improvement within the high-frequency band.

[0013] That is, the purpose of the present disclosure is to provide a structure of an RF semiconductor package that improves heat dissipation efficiency in the structure of an RF semiconductor package, simplifies the manufacturing process thereof to reduce the cost thereof, enables response to various frequency bands with various permittivities, and increases the degree of freedom in design changes.

[0014] The characteristic configuration of the present invention to achieve the purpose of the present invention as described above and to realize the characteristic effects of the present invention described below is as follows.

[0015] An RF semiconductor package according to one aspect of the present disclosure is provided, comprising: a plate for heat dissipation; at least one set of amplifying elements and a first capacitor mounted on the plate; a substrate bonded to the plate, the substrate having at least one cavity therein surrounding all or individually the at least one set of amplifying elements and the first capacitor; at least one pair of first and second terminals, which are opposite to each other, formed on the substrate within an edge of the substrate; and at least one pair of third terminals, which are formed on the substrate within an edge of the substrate and have a different orientation from the first terminal and the second terminal; and a feedback circuit formed on the substrate so as to extend from one side of the first terminal to the other side of the third terminal through an electrical connection, the feedback circuit including at least one passive element each independently selected from the group consisting of a resistor, an inductor, and a capacitor.

[0016] Preferably, the substrate is made of PCB.

[0017] Advantageously, the RF semiconductor package further includes at least one of a package gate terminal extending within an edge of the substrate through an electrical connection from at least one of the first terminals and being fully or partially exposed to an upper or lower surface of the substrate; and a package drain terminal extending within an edge of the substrate through an electrical connection from at least one of the second terminals and being fully or partially exposed to an upper or lower surface of the substrate.

[0018] Preferably, the feedback circuit further includes at least one pad formed on the substrate for electrical connection between the passive elements when there are two or more of the passive elements.

[0019] More preferably, the RF semiconductor package further includes an external connection terminal extending within an edge of the substrate through an electrical connection from at least one of the third terminal and the at least one pad and being fully or partially exposed to the upper or lower surface of the substrate.

[0020] At least one of the above at least one pad can be grounded.

[0021] Advantageously, each of the first capacitors is connected to each of the first terminals through at least one electrical connection, each of the amplifying elements is connected at its gate terminal to each of the first capacitors through at least one electrical connection, each of the amplifying elements is connected at its at least one drain terminal to each of the third terminals, and each of the amplifying elements is connected at its remaining drain terminal to each of the second terminals through at least one electrical connection, thereby forming a circuit from the first terminal to the first capacitor, the amplifying element, the third terminal, the feedback circuit, and back to the first terminal.

[0022] In one embodiment, the RF semiconductor package further includes a number of second capacitors corresponding to the amplifying elements mounted on the plate within the cavity formed by the substrate, wherein each of the first capacitors is connected to each of the first terminals through at least one electrical connection, each of the amplifying elements is connected at its gate terminal to each of the first capacitors through at least one electrical connection, each of the amplifying elements is connected at its drain terminal to each of the second capacitors through at least one electrical connection, each of the second capacitors is connected at its at least one terminal to each of the third terminals, and each of the second capacitors is connected at its remaining terminals to each of the second terminals through at least one electrical connection, thereby forming a circuit that connects from the first terminal to the first capacitor, the amplifying element, the second capacitor, the third terminal, the feedback circuit, and back to the first terminal.

[0023] According to the RF semiconductor package of the present disclosure, the heat dissipation effect is improved by reducing the thickness of the heat sink through which the heat of the active element passes, thereby easily shortening the heat dissipation path, and the reliability and lifespan of the amplifying element are improved.

[0024] In addition, according to the RF semiconductor package of the present disclosure, not only is the manufacturing cost reduced by securing a variety of substrate materials, such as by using a PCB substrate, but the manufacturing cost is also reduced by replacing hole-drilling and seat-drilling processing and brazing with a lamination process, and the manufacturing time of the semiconductor package can be shortened as design changes become easier.

[0025] In addition, according to the RF semiconductor package of the present disclosure, the dielectric constant of the PCB substrate can be diversified to increase the degree of freedom in circuit design and to easily implement optimal performance within various frequency bands.

[0026] Moreover, according to the RF semiconductor package of the present disclosure, it is possible to overcome the limitations of high-dielectric ceramic substrates and provide stable performance even within a high-frequency band.

[0027] In addition, according to the RF semiconductor package of the present disclosure, the reliability of the package is improved by improving the electrical connection structure with the feedback circuit.

[0028] In order to understand the present invention, embodiments will be described with reference to the attached drawings to show the semiconductor package structure shown in the present disclosure, which are only non-limiting examples, and it goes without saying that a person having ordinary knowledge in the technical field to which the present disclosure pertains (hereinafter referred to as “ordinary skilled person”) can obtain other drawings based on these drawings without additional efforts leading to another invention.

[0029] FIG. 1a is a drawing illustrating the processing of hole drilling and seat drilling and subsequent attachment used in the manufacture of an RF semiconductor package according to a prior art, and FIG. 1b is a drawing illustrating a manufacturing process of an RF semiconductor package according to an embodiment of the present invention in comparison with FIG. 1a.

[0030] FIG. 2 is a plan view illustrating an RF semiconductor package according to an embodiment of the present invention, and is a drawing illustrating a state in which the cover is not fastened.

[0031] FIG. 3a is a perspective view showing an RF semiconductor package according to an embodiment of the present invention, and FIG. 3b is an exploded perspective view showing the RF semiconductor package according to the same embodiment layer by layer.

[0032] FIG. 4 is a side view of an RF semiconductor package according to an embodiment of the present invention.

[0033] FIG. 5 is a side perspective view of an RF semiconductor package according to an embodiment of the present invention, showing a portion of an amplifying element.

[0034] FIG. 6 is a drawing exemplifying four variations of the pattern and shape of a package gate terminal or a package drain terminal that can be employed in an RF semiconductor package according to the present invention.

[0035] FIG. 7 is a plan view of an embodiment in which the internal matching circuit shown in FIG. 2 is modified, and is a plan view of an embodiment in which matching of different impedances is possible through capacitors added therein.

[0036] Figure 8 is a comparative diagram showing a package of the prior art and a package according to an embodiment of the present invention.

[0037] Fig. 9 is a circuit diagram schematically illustrating a typical feedback matching circuit used in the present invention using circuit symbols.

[0038] All prior art references cited in this disclosure are incorporated by reference in their entirety as if fully set forth in this disclosure. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art.

[0039] The following detailed description of the principles of construction of a wideband RF semiconductor package according to the present disclosure refers to the accompanying drawings which illustrate specific embodiments in which the present disclosure may be implemented in order to clearly illustrate the objects, technical solutions, and advantages of the invention disclosed in the present disclosure. In the description with reference to the accompanying drawings, the same components are given the same reference numerals regardless of the drawing numbers, and redundant descriptions thereof will be omitted. It will be understood that the structure of the semiconductor package according to the present disclosure does not have the same length ratio as that shown in the drawings, and the dimensions of each part in the drawings are merely shown for the purpose of explanation and do not limit the scope of the present invention.

[0040] While terms such as "first" or "second" may be used to describe various components, these terms should be interpreted solely to distinguish one component from another. For example, a "first" component may be referred to as a "second" component, and similarly, a "second" component may also be referred to as a "first" component. Singular expressions include plural expressions, and vice versa, unless the context clearly indicates otherwise.

[0041] The term "terminal" mentioned in the present disclosure refers to a conductive structure provided for transmitting electrical signals such as signal input and output between elements, and includes, but is not limited to, a terminal made of metal, i.e., a metal terminal.

[0042] Additionally, the term "electrical connection" as used herein refers to a material, substance, or component that electrically connects components, including but not limited to a bonding wire. For example, unless the context clearly dictates otherwise, "electrical connection" as used herein may be understood to mean a wiring or connecting line (e.g., that may be printed on a PCB), a wire (e.g., that may be used for wire bonding), or the like.

[0043] The term "formation" as referred to in this disclosure includes, but is not limited to, additionally forming or simultaneously forming a part at the location of its formation, as well as separately forming and then becoming an integral part.

[0044] Furthermore, the present invention encompasses all possible combinations of the embodiments set forth herein. It should be understood that the various embodiments of the present invention, while different, are not necessarily mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the present invention. The shapes depicted in the drawings are conceptually represented and are not intended to limit the scope of the present invention by limiting the precise shape of a structure or region. For example, regions depicted in the drawings as rectangular, square, etc., can often be tapered, curved, or rounded.

[0045] FIG. 2 is a plan view illustrating an RF semiconductor package according to an embodiment of the present invention, and is a view illustrating a state in which a cover is not fastened; FIG. 3a is a perspective view illustrating an RF semiconductor package according to an embodiment of the present invention; FIG. 3b is an exploded perspective view illustrating the RF semiconductor package according to the same embodiment layer by layer; and FIG. 4 is a side view of an RF semiconductor package according to an embodiment of the present invention.

[0046] Referring to FIG. 2, the RF semiconductor package (100) includes a plate (110) for heat dissipation, at least one set of amplifying elements (132) mounted thereon, and a first capacitor (131). These elements are bonded onto the plate (110). An RF internal matching circuit is implemented through the amplifying elements (132) and the first capacitor (131).

[0047] Advantageously, the plate (110) corresponds to a copper (Cu) layer (111), and a prepreg (PP) layer (112) may be additionally utilized as a bonding layer for bonding the copper layer and the substrate (120), as illustrated in FIG. 4. The plate (110) may be composed of a single copper layer, or may be composed of a layer of a metal other than copper (e.g., a thermally conductive metal such as aluminum) depending on other considerations such as required heat dissipation performance. In one example, a copper (Cu) layer (111) is composed on the distal side of the substrate (120), and a prepreg (PP) layer (112) is composed on the proximal side of the substrate (120). For example, the copper layer may have a thickness of 0.2 to 2.0 millimeters, for example, 0.3 millimeters. Additionally, the prepreg layer may have a thickness of 0.1 to 0.5 millimeters, for example, 0.3 millimeters.

[0048] Preferably, the substrate (120) can be made of a PCB, such as a metal PCB. More preferably, the PCB of the substrate (120) can have a thickness of 5 to 50 mils, for example, 20 mils.

[0049] In this way, the semiconductor package (100) according to the present disclosure can relatively reduce the thickness of the heat dissipation plate (110) through which the heat of the active element passes compared to the prior art, so that the heat dissipation path is shortened, the heat dissipation effect is improved, and the reliability and lifespan of the amplifying element are improved.

[0050] FIG. 3b is an exploded view showing the RF semiconductor package (100) according to the present disclosure in a state where the copper layer (111), the prepreg (PP) layer (112), and the substrate (120) are not laminated with each other. On the upper surface of the copper layer (111), electrode portions (135', 136', and 156') corresponding to the package gate terminal (135), the package drain terminal (136), and the external connection terminal (156) described later are formed, respectively, and each electrode portion is penetratingly connected to the prepreg layer (112) and the substrate (120) through a via (113). Through this, a low-impedance current path between the upper and lower layers in the RF semiconductor package (100) can be secured, and high-frequency characteristics and package reliability can be improved at the same time.

[0051] Of course, a person skilled in the art will understand that the composition and dimensions of the plate (110) and substrate (120) described above are exemplary and can be configured in various ways within the scope of protection of the present invention.

[0052] The amplifying element (132) is bonded to a heat-dissipating plate (110) and may not be visible from the side because it is covered by the substrate (120). FIG. 5 is a side perspective view of an RF semiconductor package according to an embodiment of the present invention, which is a view showing a portion of the amplifying element (132) through the side of the substrate (120).

[0053] Referring to FIGS. 3A to 5, at least one cavity (121) is formed in a substrate (120) bonded to a plate (110). In the present disclosure, the term "cavity" refers to a space within the substrate (120) in which a first capacitor (131), an amplifying element (132), etc., which will be described later, can be positioned, and means that the substrate (120) has a closed curve structure surrounding these elements and a cavity within the structure. The at least one cavity (121) surrounds all or individually the at least one set of the amplifying element (132) and the first capacitor (131).

[0054] For convenience of illustration and explanation, the cover is not depicted as being fastened in the drawings, but a person skilled in the art will be able to easily imagine a cover to be fastened to the top of the side wall of the semiconductor package by referring to the prior art.

[0055] In FIG. 2, not only an amplifier element (132) and a first capacitor (131) mounted on a substrate (120), but also at least one pair of first terminals (141) and second terminals (142) formed on the substrate (120) and arranged to face each other within an edge (122) of the substrate (120), and a third terminal (143) formed within the edge (122) of the substrate (120) with a different orientation from the first terminals (141) and the second terminals (142) are exemplarily illustrated. Like the first terminal (141) and the second terminal (142), the third terminal (143) may also be configured in a shape different from that illustrated in the drawings, depending on the configuration of the RF semiconductor package (100) according to the present invention. For example, the first to third terminals (141 to 143) may correspond to metal parts printed on the substrate (120), or may be metal parts formed to be embedded within the substrate (120). Therefore, there is also an advantage in that the thickness of the metal parts, which were plated with a metal such as gold (Au) to about 0.05 mm using conventional techniques, can be reduced to about 0.01 mm.

[0056] The package gate terminal (135), which is the gate terminal of the semiconductor package (100), may extend within the edge (122) of the substrate (120) through an electrical connection from at least one of the first terminals (141) and may be fully or partially exposed to the upper or lower surface of the substrate (120).

[0057] Accordingly, the package drain terminal (136), which is the drain terminal of the semiconductor package (100), may extend within the edge (122) of the substrate (120) through an electrical connection from at least one of the second terminals (142) and may be fully or partially exposed to the upper or lower surface of the substrate (120).

[0058] In addition, electrodes corresponding to each of the package gate terminal (135) and the package drain terminal (136) are formed on the copper layer (111) of the plate (110), and these electrodes can be electrically connected in the upper and lower directions through vias (113) formed through the substrate (120) and the prepreg layer (112).

[0059] The shape of the package gate terminal (135) and the package drain terminal (136) is not limited to the attached drawings, and can be designed in various patterns or shapes different from those shown in the drawings, as exemplified by the four modified examples shown from top to bottom in FIG. 6.

[0060] As shown in the drawings, the terminals (141, 142, 143, 135, 136, etc.) are all arranged within the edge of the substrate (120) and are non-protruding, not protruding beyond the edge, and are electrically connected to the copper layer (111) and the wiring formed thereon (111) through the corresponding via (113). Such a structure not only prevents damage to the terminals but also allows the transistor to be directly attached to the external substrate, PCB, EVB, etc. without separate processing of the external substrate, PCB, EVB, etc.

[0061] FIG. 7 is a plan view of an embodiment in which the internal matching circuit shown in FIG. 2 is modified, and is a plan view of an embodiment in which matching of different impedances is possible through capacitors added therein.

[0062] In the semiconductor package (100') of the embodiment shown in FIG. 7, not only the first capacitor (131) but also the second capacitor (133) are electrically connected to the amplifying element (132), and are interconnected through a feedback circuit (150) formed on the substrate (120). Similarly to the first capacitor (131), the number of second capacitors (133) corresponding to the number of amplifying elements (132) are mounted in the cavity (121) on the plate (110). The addition of the second capacitor has the advantage of enabling various impedance matching, thereby enabling precise adjustment of the RF signal.

[0063] Figure 8 is a comparative diagram showing a package of the prior art and a package according to an embodiment of the present invention.

[0064] Referring to FIG. 8, in the case of a conventional RF semiconductor package (semiconductor package shown at the top of FIG. 8), the terminals protrude outside the substrate, which may cause bending or bending of the terminals during movement or operation. However, the RF semiconductor package according to the present disclosure (semiconductor package shown at the bottom of FIG. 8) does not have terminals protruding outside, and all terminals are located within the edge (122) of the substrate (120), so that the terminals can be free from damage caused by accidental external force. In addition, when the RF semiconductor package according to the present embodiment is used, the RF semiconductor package can be attached to an external substrate, PCB, EVB, etc. by using a lamination process or the like without processing, so that the processing process of the substrate and heat sink for attaching the conventional RF semiconductor package can be omitted, thereby increasing user convenience.

[0065] Fig. 9 is a circuit diagram schematically illustrating a typical feedback matching circuit used in the present invention using circuit symbols.

[0066] Referring to FIGS. 2 and 9, the feedback circuit (150) includes matching elements corresponding to a predetermined impedance, i.e., passive elements such as resistors, inductors, and capacitors, which are illustrated as circuit symbols in FIG. 9. The feedback circuit (150) is a circuit that receives an RF signal through an electrical connection (e.g., a wire) connected to the drain pad of the amplifying element (132), transmits the RF signal to the gate terminal of the semiconductor package, i.e., the first terminal (141), through the matching elements, and feeds it back to the amplifying element (132) through the first capacitor (131) connected to the first terminal (141). The matching of the RF signal can be optimized through these passive elements. The electrical connection connected to the amplifying element (132), more specifically, the electrical connection connected to the drain pad of the amplifying element (132), is electrically connected to one terminal of the feedback circuit (150), i.e., the third terminal (143). As is known, the feedback circuit (150) is implemented with terminals (and / or pads) and the matching elements between the terminals (and / or pads).

[0067] The locations of the circuit symbols illustrated in FIG. 9 may vary depending on the matching frequency or the output of the amplifier elements, and some of the passive elements may be implemented in an external circuit of the RF semiconductor package according to the present invention (e.g., on another PCB mounting the RF semiconductor package). In short, the way the feedback circuit (150) is configured may vary depending on the frequency and output.

[0068] Referring to FIG. 2, a feedback circuit (150) is formed on a substrate (120) of an RF semiconductor package (100) to extend from one side of a first terminal (141) to the other side of a third terminal (143) through an electrical connection. Specifically, the feedback circuit (150) includes at least one passive element independently selected from a group consisting of a resistor, an inductor, and a capacitor. Here, the term 'independent' means that there is no limitation that the types of elements must be the same or different.

[0069] The feedback circuit (150) is configured such that one side of the first terminal (141) and at least one of the above-described passive elements are electrically connected to each other, and the other side of the third terminal (143) and at least one of the above-described passive elements are electrically connected to each other to form a part of an electrically conductive circuit. Here, “one of the passive elements” mentioned as being connected to the one side of the first terminal (141) and “one of the passive elements” mentioned as being connected to the other side of the third terminal (143) may be the same or different.

[0070] As with the prior art mentioned in the present disclosure, the RF semiconductor package according to the present invention may also include a lid (160; not shown), which may be mounted on the substrate (120) and formed to seal the cavity in which the amplifying element (132) and the first capacitor (131) are located, as well as to seal the feedback circuit (150) together. According to the present disclosure, the lid may also be replaced with plastic or PCB rather than ceramic, resulting in a significant cost reduction effect.

[0071] For example, the at least one passive element included in the feedback circuit (150) may include at least one inductor. The feedback circuit (150) may further include at least one pad (155) formed on the substrate (120) for electrical connection between the passive elements when there are two or more of the passive elements. In addition, at least one of the pads (155) may be grounded according to the feedback structure.

[0072] The height of the terminals, pads, and passive components arranged on the substrate can be designed to be sufficiently small so that they can be located within a space sealed by the cover (160). In addition, the dimensions of the plate (110), the substrate (120), the terminals / pads (141, 142, 143, 155), the passive components of the feedback circuit (150), and the cover (160) can be determined according to the frequency and output of the wideband RF semiconductor package.

[0073] In one embodiment, the RF semiconductor package (100) further includes an external connection terminal (156) extending within an edge (122) of the substrate (120) and being fully or partially exposed to the upper or lower surface of the substrate (120) through an electrical connection from at least one of the third terminal (143) and at least one pad (155), as illustrated in FIG. 2. This external connection terminal (156) is also formed as an extension of a vertical conductive path penetrating the copper layer (111) - via (113) - substrate (120), thereby enabling a highly reliable electrical connection between the upper and lower surfaces of the package (100).

[0074] In this embodiment, the RF semiconductor package (100) is electrically connected to an external feedback circuit (not shown) that functions as an alternative to the feedback circuit (150) or together with the feedback circuit (150) through its external connection terminal (156), and the external feedback circuit is implemented on a PCB substrate or the like outside the package (100) to enable additional matching adjustment. In particular, when the amplifying element (132) has a relatively high output or exceeds the capacitance limit value of the first capacitor (131), an additional capacitor may be added to the external feedback circuit.

[0075] Now, referring to the drawings, several non-limiting embodiments of implementing a feedback circuit in the package (100) as components of the RF semiconductor package of the present invention including a feedback circuit portion (150) will be described.

[0076] Referring to FIG. 2, in one embodiment, each of the first capacitors (131) may be connected, for example, on one side thereof, to each of the first terminals (141) via at least one electrical connection, and each of the amplifying elements (132) may be connected, at the gate terminal of the amplifying element (132), to each of the first capacitors (131) via at least one electrical connection (145), for example, on the other side of the first capacitor (131). Furthermore, each of the amplifying elements (132) may be connected, at least one of the drain terminals of the amplifying element (132), to each of the third terminals (143) via at least one electrical connection (146), and each of the amplifying elements (132) may be connected, at each of the remaining drain terminals thereof, to each of the second terminals (142) via at least one electrical connection. That is, the number of electrical connections from the drain terminal of the amplifier element (132) to the third terminal (143) may be two or more.

[0077] In this way, a feedback circuit that connects the first terminal (141) to the first capacitor (131), the amplifier element (132), the third terminal (143), the feedback circuit (150), and then back to the first terminal (141) can be formed inside the RF semiconductor package (100).

[0078] This feedback circuit receives an RF signal through an electrical connection connected to the drain of the amplifier element (132), transmits it through a feedback circuit (150) to a first terminal (141), that is, a gate terminal (package gate terminal) of an RF semiconductor package (100), and then affects the amplifier element (132) again through a first capacitor (131) connected to the first terminal (141).

[0079] Meanwhile, referring to FIG. 7 of another embodiment, each of the first capacitors (131) is connected to each of the first terminals (141) through at least one electrical connection, each of the amplifying elements (132) is connected to each of the first capacitors (131) through at least one electrical connection (145) at the gate terminal of the amplifying element (132), each of the amplifying elements (132) is connected to each of the second capacitors (133) through at least one electrical connection (146) at the drain terminal of the amplifying element (132), each of the second capacitors (133) is connected to each of the third terminals (143) through an electrical connection (147) connected to at least one of the terminals, and each of the second capacitors (133) is connected to each of the second terminals (142) through at least one electrical connection (148) at the remaining terminals.

[0080] In this way, a feedback circuit is formed inside the RF semiconductor package (100') from the first terminal (141) to the first capacitor (131), the amplifier element (132), the second capacitor (133), the third terminal (143), the feedback circuit (150), and then back to the first terminal (141).

[0081] That is, according to FIG. 7, it is shown that in order to configure the feedback circuit as an embodiment of configuring the RF internal matching circuit, an electrical connection part can be connected to the second capacitor (133) rather than the amplifier element (132).

[0082] According to the RF semiconductor package according to the present disclosure described above, not only is manufacturing cost reduced by securing a variety of substrate materials, such as by using a PCB substrate, but design changes are also facilitated, thereby shortening the manufacturing time of the semiconductor package. In addition, by diversifying the permittivity of the PCB substrate, the degree of freedom in circuit design is increased, and optimal performance can be easily implemented within various frequency bands. In addition, the limitations of high-k ceramic substrates can be overcome, thereby providing stable performance even within high-frequency bands.

[0083] A person skilled in the art will readily understand the concepts upon which this disclosure is based and will readily utilize the concepts as a basis for designing modified structures for carrying out some of the purposes of the present invention.

[0084] The foregoing examples are merely illustrative of several possible embodiments of the various aspects of the present disclosure, and equivalent variations and / or modifications will occur to others skilled in the art upon reading and understanding this specification and the accompanying drawings. In addition, although a particular feature of the present disclosure may be described and / or illustrated with respect to only one of several embodiments, such feature may be combined with one or more other features of other embodiments as may be desirable or advantageous for a given application or specific applications. Furthermore, to the extent that the words "comprising," "including," "having," "having with," or variations thereof are used in the description and / or claims, such terms are intended to be inclusive in a manner similar to the term "comprising."

[0085] Description of the symbol

[0086] 100, 100': RF semiconductor package

[0087] 110: Plate

[0088] 120: Substrate

[0089] 121: Cavity

[0090] 122: Edge of the substrate

[0091] 131: First capacitor

[0092] 132: Amplifier

[0093] 133: Second capacitor

[0094] 135: Package gate terminal

[0095] 136: Package drain terminal

[0096] 141: Terminal 1

[0097] 142: Terminal 2

[0098] 143: Third terminal

[0099] 145, 146, 147, 148: Electrical connections

[0100] 150: Feedback circuit

[0101] 155: Pad

[0102] 156: External connection terminal

Claims

1. Plate for heat dissipation; At least one amplifying element mounted on the above plate; A substrate bonded to said plate, said substrate having at least one cavity therein, said cavity enclosing all or individually said at least one amplifying element; At least one pair of mutually opposing first terminals and second terminals formed on the substrate within an edge of the substrate; At least one pair of third terminals formed on the substrate with a different orientation from the first terminal and the second terminal within the edge of the substrate; and A feedback circuit formed on the substrate so as to extend from one side of the first terminal to the other side of the third terminal through an electrical connection, wherein the feedback circuit includes at least one passive element independently selected from the group consisting of a resistor, an inductor, and a capacitor. RF semiconductor package including.

2. In paragraph 1, The above substrate is an RF semiconductor package manufactured using a PCB.

3. In paragraph 1, A package gate terminal extending within an edge of the substrate through an electrical connection from at least one of the first terminals and being fully or partially exposed to the upper or lower surface of the substrate; and A package drain terminal extending within an edge of the substrate through an electrical connection from at least one of the second terminals and being fully or partially exposed to the upper or lower surface of the substrate; An RF semiconductor package comprising at least one of:

4. In paragraph 1, The above feedback circuit part, An RF semiconductor package further comprising at least one pad formed on the substrate for electrical connection between the passive components when the passive components are two or more.

5. In paragraph 4, An RF semiconductor package further comprising an external connection terminal extending within an edge of the substrate through an electrical connection from at least one of the third terminal and the at least one pad and being fully or partially exposed to the upper or lower surface of the substrate.

6. In paragraph 1, Further including a first capacitor mounted on the above plate within the cavity by the substrate, Each of the first capacitors is connected to each of the first terminals through at least one electrical connection, each of the amplifying elements is connected from each of the gate terminals to each of the first capacitors through at least one electrical connection, each of the amplifying elements is connected from each of the at least one drain terminals to each of the third terminals, and each of the amplifying elements is connected from each of the remaining drain terminals to each of the second terminals through at least one electrical connection, An RF semiconductor package in which a circuit is formed from the first terminal through the first capacitor, the amplifying element, the third terminal, the feedback circuit, and then back to the first terminal.

7. In paragraph 1, Further comprising a first capacitor mounted on the plate and a second capacitor mounted on the plate within the cavity by the substrate, Each of the first capacitors is connected to each of the first terminals through at least one electrical connection, each of the amplifying elements is connected at each of the gate terminals to each of the first capacitors through at least one electrical connection, each of the amplifying elements is connected at each of the drain terminals to each of the second capacitors through at least one electrical connection, each of the second capacitors is connected at at least one terminal to each of the third terminals, and each of the second capacitors is connected at the remaining terminals to each of the second terminals through at least one electrical connection, An RF semiconductor package in which a circuit is formed from the first terminal through the first capacitor, the amplifying element, the second capacitor, the third terminal, the feedback circuit, and then back to the first terminal.

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