Upper electrode assembly, semiconductor process chamber, and semiconductor processing device

Abstract

The present disclosure provides an upper electrode assembly, a semiconductor process chamber, and a semiconductor processing device, said upper electrode assembly comprising: a carrier, fixed on a chamber body of a semiconductor process chamber and provided with a receiving hole; a radio frequency isolation ring, carried on the carrier and at least partially located in the receiving hole, and used to block radio frequency energy; a gas spray head, passing through an annular cavity of the radio frequency isolation ring and carried on the radio frequency isolation ring, and capable of feeding radio frequency energy into the semiconductor process chamber; a first positioning and adjustment module, comprising: a fixing member, disposed on the carrier and located outside the radio frequency isolation ring; a pressing member, connected to the fixing member and extending toward a center of the radio frequency isolation ring, and capable of cooperating with the carrier to clamp and position the radio frequency isolation ring and the gas spray head; and an adjustment mechanism, disposed on the fixing member and capable of moving radially along the radio frequency isolation ring to enable radial movement of the gas spray head. The described upper electrode assembly can adjust the concentricity between the respective components, and can also avoid energy crosstalk within the radio frequency field, thereby improving film formation quality.

Description

An upper electrode assembly, a semiconductor process chamber and a semiconductor process equipment TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor equipment, in particular to an upper electrode assembly, a semiconductor process chamber and a semiconductor process equipment. BACKGROUND

[0002] Plasma Enhanced Atomic Layer Deposition (PEALD) is based on the traditional atomic layer deposition technology and introduces plasma containing various high-activity particles (plasma is obtained by radio frequency discharge on gaseous precursors), and then realizes thin film deposition through the reaction of plasma and precursors. Because the thin film deposited by PEALD has good conformality, precise thickness control energy, and is applied more and more widely.

[0003] The existing PEALD process equipment realizes the feeding of plasma into the semiconductor process chamber through the upper electrode assembly. However, in the current process, there is energy crosstalk in the radio frequency field caused by the upper electrode assembly, and the film forming quality is not ideal, which seriously affects the process quality. SUMMARY

[0004] Therefore, the present application provides an upper electrode assembly which can not only reduce or even avoid energy crosstalk in the radio frequency field, but also adjust the concentricity between the components, so that the film forming quality is improved. In addition, the present application also provides a semiconductor process chamber comprising the above-mentioned upper electrode assembly, and a semiconductor process equipment comprising the semiconductor process chamber.

[0005] In order to achieve the above-mentioned purpose, the present application provides the following technical solutions:

[0006] An upper electrode assembly for being arranged in a semiconductor process chamber of a semiconductor process equipment, comprising:

[0007] A carrier fixedly arranged on a cavity of the semiconductor process chamber and provided with a receiving hole;

[0008] A radio frequency isolation ring carried on the carrier and at least partially located in the receiving hole, for blocking radio frequency capability;

[0009] A gas shower head passing through a ring cavity of the radio frequency isolation ring and carried on the radio frequency isolation ring, and at least for feeding radio frequency energy into the semiconductor process chamber;

[0010] The first positioning and adjusting module comprises: a fixing member arranged on the bearing member and located outside the RF isolating ring; a pressing member connected to the fixing member and extending towards the center of the RF isolating ring, and capable of cooperating with the bearing member to clamp and position the RF isolating ring and the gas shower head; and an adjusting mechanism arranged on the fixing member and capable of moving along the radial direction of the RF isolating ring to push the gas shower head to move radially.

[0011] In some embodiments, in the above upper electrode assembly, a gas guide channel for guiding the inert gas is arranged on the bearing member, the inert gas guided by the gas guide channel flows to the exhaust port of the semiconductor process chamber under the guidance of the RF isolating ring and the gas shower head.

[0012] In some embodiments, in the above upper electrode assembly, a positioning module for positioning the RF isolating ring and the gas shower head is further included, a plurality of the first positioning and adjusting modules and the positioning modules are arranged in the circumferential direction of the accommodating hole, and the first positioning and adjusting modules and the positioning modules are alternately arranged in the circumferential direction of the accommodating hole.

[0013] In some embodiments, in the above upper electrode assembly, the fixing member is connected to the bearing member to move and / or rotate, and the pressing member is driven to reciprocatingly move and / or rotate to realize the positioning and de-positioning of the RF isolating ring and the gas shower head.

[0014] In some embodiments, in the above upper electrode assembly, the adjusting mechanism comprises:

[0015] A second through hole is arranged on the fixing member in the radial direction of the RF isolating ring;

[0016] A moving member has one end extending into and moving in the second through hole, and the other end located on the side of the fixing member away from the RF isolating ring and provided with a second threaded hole;

[0017] A third threaded hole is arranged on the fixing member in the radial direction of the RF isolating ring, and the thread direction is opposite to that of the second threaded hole;

[0018] An adjusting member has a screw rod part threadedly cooperating with the second threaded hole and the third threaded hole.

[0019] In some embodiments, in the above upper electrode assembly, the first positioning and adjusting module further comprises an insulating pad arranged on the fixing member and the pressing member and used to contact the RF isolating ring and the gas shower head.

[0020] In some embodiments, in the upper electrode assembly, the radio frequency isolation ring comprises: a cylindrical portion located in the accommodating hole; a first flange portion provided at a top end of the cylindrical portion and protruding radially outward relative to the cylindrical portion;

[0021] The gas spraying head comprises: a main body portion passing through the accommodating hole; a second flange portion provided at a top end of the main body portion and protruding radially outward relative to the main body portion;

[0022] Wherein, the first flange portion is overlapped on the edge of the accommodating hole to realize the bearing of the radio frequency isolation ring by the bearing member; and the second flange portion is overlapped on the first flange portion to realize the bearing of the gas spraying head by the bearing member.

[0023] In some embodiments, in the upper electrode assembly, the gas guide channel comprises:

[0024] An annular channel is arranged around the accommodating hole;

[0025] A plurality of gas guide holes are arranged uniformly in the circumferential direction of the accommodating hole and are communicated between the annular channel and the accommodating hole;

[0026] A gas introduction channel is communicated with the annular channel and forms an air inlet hole on the surface of the bearing member.

[0027] A semiconductor process chamber comprises a cavity and an upper electrode assembly arranged on the cavity, wherein the upper electrode assembly is the above-mentioned upper electrode assembly.

[0028] In some embodiments, in the semiconductor process chamber, an exhaust assembly is further arranged in the semiconductor process chamber, wherein the exhaust assembly comprises:

[0029] A support ring is arranged around the outside of a lower electrode assembly;

[0030] An exhaust ring has an exhaust channel and is supported by the support ring on the top of the support ring;

[0031] A flow control ring is supported by the support ring on the top of the support ring and surrounds an exhaust port of the exhaust channel with the exhaust ring;

[0032] A second positioning and adjusting module is arranged on the top of the support ring and is used to adjust the concentricity of the support ring, the exhaust ring and the flow control ring, and to adjust the concentricity of the exhaust assembly and the upper electrode assembly.

[0033] In some embodiments, in the semiconductor process chamber, the second positioning and adjusting module comprises:

[0034] The limiting member comprises a connecting block for connecting with the support ring, a limiting plate connected to the connecting block and abutting against the exhaust ring, and a limiting block connected to the limiting plate and abutting against the flow control ring.

[0035] The adjusting assembly connects the support ring and the limiting member and adjusts the radial distance between the support ring and the limiting member, so as to change the concentricity of the exhaust ring and the support ring and / or change the concentricity of the flow control ring and the support ring through the limiting member.

[0036] In some embodiments, in the semiconductor process chamber, the second positioning and adjusting module is provided with a plurality of modules in the circumferential direction of the support ring.

[0037] In some embodiments, in the semiconductor process chamber, the flow control ring comprises a plurality of rings with different thicknesses, and each of the flow control rings cooperates with the exhaust ring to form exhaust ports with different sizes.

[0038] In some embodiments, in the semiconductor process chamber, the exhaust ring extends into the space surrounded by the gas shower head, the RF isolation ring, the carrier and the cavity of the semiconductor process chamber under the support of the support ring, and the exhaust ring has a gap between the RF isolation ring and the gas shower head to guide the inert gas introduced by the gas guide channel to the exhaust port of the exhaust channel.

[0039] A semiconductor process device comprises a RF source for generating RF energy and the semiconductor process chamber.

[0040] In some embodiments, in the semiconductor process device, the semiconductor process device comprises a plurality of semiconductor process chambers, and each of the semiconductor process chambers is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly and a RF source connected thereto, wherein:

[0041] The RF source is used for feeding the RF energy generated by the RF source into the semiconductor process chamber, and the RF source has two feeding points in each of the semiconductor process chambers, and the included angle formed by the two feeding points and the line connecting the centers of the semiconductor process chambers is 180 degrees.

[0042] and / or,

[0043] The carrier is a plate-shaped member provided with two accommodating holes, and the two accommodating holes are located in the two semiconductor process chambers respectively, and the RF sources of the two semiconductor process chambers are mirror-imaged.

[0044] The upper electrode assembly provided by the application is fixedly arranged on the cavity of the semiconductor process chamber, and the radio frequency isolation ring and the gas shower head are carried on the carrier, so that the assembly of the upper electrode assembly and the semiconductor process chamber is realized, and the upper electrode assembly further comprises a first positioning and adjusting module, the radio frequency energy at the position of the fixing member of the first positioning and adjusting module is blocked by the radio frequency isolation ring when the fixing member is arranged on the carrier, so that the installation of the fixing member does not affect the radio frequency energy in the radio frequency field, and the generation quality of the film is improved; one end of the pressing member of the first positioning and adjusting module is connected to the fixing member, and the other end extends to the center of the radio frequency isolation ring and extends into the radio frequency field, and the pressing member can clamp the radio frequency isolation ring and the gas shower head together with the carrier to realize the positioning of the radio frequency isolation ring and the gas shower head, since the clamping and pressing positioning mode is adopted instead of the bolt locking positioning mode in the prior art, the bolts do not need to be arranged in the radio frequency field, the energy crosstalk in the radio frequency field caused by the arrangement of the bolts is avoided, and the generation quality of the film is improved again; meanwhile, the first positioning and adjusting module further comprises an adjusting mechanism, the adjusting mechanism can adjust the position of the gas shower head in the radial direction, and even if the gas shower head and the radio frequency isolation ring move and expand due to the machining error or the high-temperature process, the gas shower head can be radially moved to the position concentric with the radio frequency isolation ring by operating the adjusting mechanism, so that the upper electrode assembly continuously maintains high concentricity, and the generation quality of the film is improved again. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the accompanying drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the accompanying drawings in the following description are only embodiments of the present application, and other accompanying drawings can be obtained by those skilled in the art without any creative effort on the basis of the provided accompanying drawings.

[0046] Fig. 1 is a sectional view of part of the structure of the semiconductor process equipment provided by the embodiment of the present application;

[0047] Fig. 2 is an enlarged view of part A in Fig. 1;

[0048] Fig. 3 is a structural schematic view of the carrier;

[0049] Fig. 4 is a structural schematic view of the carrier after being cut to expose the gas guide channel;

[0050] Fig. 5 is a structural schematic view of the first positioning and adjusting module;

[0051] Fig. 6 is a sectional view of the first positioning and adjusting module;

[0052] Fig. 7 is a structural schematic view of the circumferential arrangement of the first positioning and adjusting module and the positioning module;

[0053] Fig. 8 is an enlarged view of part B in Fig. 1;

[0054] Fig. 9 is a structural schematic view of a second positioning adjustment module;

[0055] Fig. 10 is a structural schematic view of a circumferential arrangement of the second positioning adjustment module;

[0056] Fig. 11 is a distribution schematic view of a radio frequency source arranged in adjacent two semiconductor process chambers.

[0057] In Figs. 1-11: 1-semiconductor process chamber, 2-carrier, 3-receiving hole, 4-radio frequency isolation ring, 5-gas shower head, 6-first positioning adjustment module, 7-gas guide channel, 8-positioning module, 9-insulating gas inlet block, 10-radio frequency shield, 11-metal gas inlet block, 12-support ring, 13-exhaust ring, 14-flow control ring, 15-second positioning adjustment module, 16-radio frequency source, 17-heating base, 18-top pin, 19-leveling plate, 20-cavity, 21-connection strip. 401-cylindrical portion, 402-first flange portion; 501-main body portion, 502-second flange portion; 601-fixing member, 602-pressing member, 603-first through hole, 604-first threaded hole, 605-pressing bolt, 606-second through hole, 607-moving member, 608-second threaded hole, 609-third threaded hole, 610-adjusting member, 611-insulating pad; 6071-pushing rod; 701-annular channel, 702-gas guide hole, 703-introduction channel, 704-gas inlet hole; 1301-exhaust channel, 1302-exhaust port; 1501-limiting member, 1502-adjusting sleeve, 1503-fourth threaded hole, 1504-adjusting bolt, 1505-fifth threaded hole; 15011-connection block, 15012-limiting plate, 15013-limiting block; 15041-first screw portion, 15042-second screw portion. DETAILED DESCRIPTION

[0058] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0059] The existing PEALD process equipment, the upper electrode assembly will be caused by processing error or movement and expansion of each component under high temperature process, the concentricity between each component, which will affect the film quality, and the current upper electrode assembly in a fixed way, which can not adjust the concentricity between each component, resulting in the film quality is not ideal; Moreover, the current upper electrode assembly by using bolts to achieve its located in the radio frequency field of the fixed assembly of components (such as gas shower head), this kind of assembly will cause the existence of the radio frequency field energy crosstalk, which will also affect the film quality.

[0060] In view of the above problems in the prior art, as shown in FIG. 1-11, the present application provides a new type of upper electrode assembly, which is applied to the semiconductor process equipment suitable for PEALD process, the upper electrode assembly mainly includes a carrier 2, a radio frequency isolation ring 4, a gas shower head 5 and a first positioning and adjusting module 6, wherein:

[0061] The carrier 2 is the basic component of the upper electrode assembly assembled in the semiconductor process chamber 1, and is also the horizontal reference of the upper electrode assembly. Other components of the upper electrode assembly are carried on the carrier 2. When assembled with the semiconductor process chamber 1, the carrier 2 is fixedly arranged on the cavity 20 surrounding the semiconductor process chamber 1, and is sealingly connected with the cavity 20 through a sealing ring. The sealing connection part is the part of the cavity 20 surrounding the top opening, that is, the carrier 2 is arranged on the edge of the top opening of the semiconductor process chamber 1. The upper electrode assembly provided by the present application can form the upper cover of the semiconductor process chamber 1. The structure of the carrier 2 is shown in FIG. 3 and FIG. 11. The carrier 2 can be arranged as a plate-shaped member, and a containing hole 3 is formed in the plate-shaped member. The containing hole 3 is arranged concentrically with the top opening of the semiconductor process chamber 1, and the diameter of the containing hole 3 is close to but smaller than the diameter of the top opening, so as to form an annular boss in the semiconductor process chamber 1, that is, towards the center of the semiconductor process chamber 1, so that the radio frequency isolation ring 4 and the gas shower head 5 can be arranged on the annular boss, so that the carrier 2 can support and support the radio frequency isolation ring 4 and the gas shower head 5.

[0062] The radio frequency isolation ring 4 is a component for isolating radio frequency in the semiconductor process chamber 1, which mainly plays an insulating role. When assembling, the radio frequency isolation ring 4 is first arranged on the annular boss, and at least part of the radio frequency isolation ring 4 arranged on the annular boss is located in the accommodating hole 3. In this way, the radio frequency isolation ring 4 can be located on the inner side of the annular boss in the radial direction (since there are multiple cylindrical or annular or disc-shaped components in the semiconductor process chamber 1, the radio frequency isolation ring 4, the gas shower head 5, and the support ring 12, the exhaust ring 13, the flow control ring 14, the wafer, the heating base 17, and the leveling plate 19 described later, and there are concentricity requirements between these components, so the “radial direction” and “axial direction” mentioned in the present application can be the radial direction and axial direction of any of these components), thereby blocking the radio frequency energy from being conducted away from its arrangement position (or the arrangement position of the carrier 2), and avoiding the influence of the radio frequency energy on the carrier 2.

[0063] The gas shower head 5 is a component for introducing process gas, precursor, etc. into the semiconductor process chamber 1, and is also the initial position of radio frequency energy application, that is, also used for feeding radio frequency energy into the semiconductor process chamber 1. After assembly, one end of the gas shower head 5 is in communication with the outside of the semiconductor process chamber 1 through the insulating gas inlet block 9 and the metal gas inlet block 11 described later, and the other end is located in the semiconductor process chamber 1 and has a plurality of uniformly distributed small holes. Process gas and plasma can be uniformly distributed in the reaction area through the small holes. In the assembly process, the gas shower head 5 passes through the annular cavity of the radio frequency isolation ring 4, that is, the gas shower head 5, the radio frequency isolation ring 4 and the carrier 2 are arranged in the radial direction from inside to outside. Since the gas shower head 5 needs to have a floating potential, the gas shower head 5 is carried on the radio frequency isolation ring 4, specifically arranged above the radio frequency isolation ring 4, thereby realizing indirect carrying of the gas shower head 5 on the carrier 2.

[0064] The first positioning and adjusting module 6 is used to realize the concentricity adjustment of the gas shower head 5 and the RF isolating ring 4 and the positioning of the gas shower head 5 and the RF isolating ring 4 on the carrier 2 after the adjustment, as shown in FIG. 1 and FIG. 2, the first positioning and adjusting module 6 comprises a fixing member 601, a pressing member 602 and an adjusting mechanism, the fixing member 601 is arranged on the carrier 2 and located outside the RF isolating ring 4, since the RF isolating ring 4 isolates the RF field, the fixing member 601 arranged on the carrier 2 and located outside the RF isolating ring 4 is not located in the RF field, neither the fixing member 601 itself nor the connecting mode of the fixing member 601 on the carrier 2 will affect the RF energy, while the pressing member 602 is connected to the fixing member 601, specifically, one end of the pressing member 602 is connected to the fixing member 601, and the other end extends to the center of the RF isolating ring 4 and extends into the RF field, and the part of the pressing member 602 located in the RF field can press the gas shower head 5 and the RF isolating ring 4 in the RF field, so as to cooperate with the carrier 2 to realize the clamping of the gas shower head 5 and the RF isolating ring 4, so that the gas shower head 5 and the RF isolating ring 4 can be clamped and positioned on the carrier 2, and the adjusting mechanism is used to adjust the radial position of the gas shower head 5, the adjusting mechanism is arranged on the fixing member 601, since the fixing member 601 is located outside the RF field, most of the adjusting mechanism is also located outside the RF field, even if part of the adjusting mechanism enters the RF field due to the radial movement of the gas shower head 5, the influence on the RF energy will be very small (because the deviation range of the concentricity is small, so the distance of the radial movement of the gas shower head 5 is small, and then the distance of the adjusting mechanism entering the RF field is also small), the adjusting mechanism can move the gas shower head 5 to the position concentric with the RF isolating ring 4 by pushing the gas shower head 5 to move along the radial direction, so as to make the upper electrode assembly continuously maintain high-precision concentricity.

[0065] Specifically, in the above structure, in addition to the plate structure, the carrier 2 can also be other structures, for example, the carrier 2 is a plurality of carrier blocks, the plurality of carrier blocks are arranged in the circumferential direction at the top opening of the semiconductor process chamber 1 (this structure is not shown in the figure), the carrier blocks surround the accommodating hole 3 and have a part extending into the inside of the semiconductor process chamber 1 to form a boss; in addition, in order to improve the structural strength and the stability of the work, as shown in FIG. 2, FIG. 5 and FIG. 6, the fixing member 601 and the pressing member 602 are arranged in a block structure, in addition, the fixing member 601 and the pressing member 602 can also be other structures, for example, plate structure, columnar structure, etc., in order to simplify the structure, reduce the number of parts and reduce the assembly complexity, the fixing member 601 and the pressing member 602 are also integrated structures, for example, the fixing member 601 and the pressing member 602 are integrally cast structures or integrally machined structures.

[0066] The upper electrode assembly described above, when assembled with the semiconductor process chamber 1, first fix the carrier 2 at the top opening of the semiconductor process chamber 1, then install the RF isolation ring 4 on the carrier 2 and in the accommodating hole 3, then make the gas shower head 5 pass through the RF isolation ring 4 and install it on the RF isolation ring 4 and / or the carrier 2, and then install the first positioning and adjusting module 6 on the carrier 2; when the concentricity needs to be adjusted, the pressing part 602 is kept in a state of releasing the pressing of the gas shower head 5 and the RF isolation ring 4, then the adjusting mechanism is operated to make the adjusting mechanism push the gas shower head 5 to move to a position concentric with the RF isolation ring 4, and finally the pressing part 602 is switched to a state of clamping the gas shower head 5 and the RF isolation ring 4 with the carrier 2, so as to realize the positioning of the gas shower head 5 and the RF isolation ring 4 in the concentric position. Since the fixing part 601 connecting the positioning part (i.e. the pressing part 602) is arranged outside the RF field, the pressing positioning of the gas shower head 5 and the RF isolation ring 4 in the RF field is realized by using the pressing part 602 (avoiding the use of bolts), the first positioning and adjusting module 6 is additionally provided to adjust the concentricity of the gas shower head 5 and the RF isolation ring 4 in real time, so that the threefold improvement of the film deposition quality can be realized, the consistency and stability of the thin film deposition are better, the improvement effect is very significant, and the production cost is also saved.

[0067] The upper electrode assembly provided by the present application further comprises a positioning module 8 for positioning the RF isolation ring 4 and the gas shower head 5 on the basis of the first positioning and adjusting module 6, as shown in FIG. 7. The positioning module 8 comprises a fixing part 601 and a pressing part 602. In the process of thin film deposition, in order to obtain a thin film with good performance, the gas shower head 5 and the RF isolation ring 4 need to be kept in precise concentricity at all times. The present application further provides the positioning module 8 for positioning the RF isolation ring 4 and the gas shower head 5 in order to more stably ensure the concentricity. In order to simplify the structure and reduce the processing, manufacturing and assembly difficulty of the components, the positioning module 8 can adopt a similar structure to the first positioning and adjusting module 6, that is, the adjusting mechanism of the first positioning and adjusting module 6 is cancelled, and the fixing part 601 and the pressing part 602 are retained, so that the positioning module 8 has the same installation and positioning modes as the first positioning and adjusting module 6. In this way, the influence of the positioning module 8 on the RF energy can be avoided, and the manufacturing cost of the upper electrode assembly can be saved. Of course, without considering the above factors, the structure of the positioning module 8 can be completely different from that of the first positioning and adjusting module 6.

[0068] Further, as shown in FIG. 7, a plurality of first positioning adjustment modules 6 and positioning modules 8 are arranged in the circumferential direction of the accommodating hole 3, and the first positioning adjustment modules 6 and the positioning modules 8 are alternately arranged in the circumferential direction of the accommodating hole 3. Among them, arranging a plurality of first positioning adjustment modules 6 in the circumferential direction of the accommodating hole 3 can realize multidirectional adjustment of the gas shower head 5 in the entire circumferential direction, and can cope with more diversified eccentric situations. When adjusting, for example, the gas shower head 5 needs to move to the left side, first release the compression positioning of the gas shower head 5 by all the first positioning adjustment modules 6 and all the positioning modules 8, then operate the first positioning adjustment modules 6 on the left side of the gas shower head 5, so that the adjustment mechanism on the left side of the first positioning adjustment module 6 is separated from the gas shower head 5 to provide space for the left movement of the gas shower head 5, then operate the first positioning adjustment modules 6 on the right side of the gas shower head 5, so that the adjustment mechanism on the right side of the first positioning adjustment module 6 pushes the gas shower head 5 to move to the left side, when the gas shower head 5 moves to the position, the left adjustment mechanism also abuts against the gas shower head 5 (but will not push the gas shower head 5 to move to the right side, this step can also be omitted), finally, all the first positioning adjustment modules 6 and all the positioning modules 8 are used to compress and position the gas shower head 5. Of course, in the special case that the gas shower head 5 can only move in one direction, only one first positioning adjustment module 6 for reverse adjustment can be arranged. The plurality of positioning modules 8 arranged in the circumferential direction can further realize the positioning of the gas shower head 5 in all directions. In some embodiments, as shown in FIG. 7, four first positioning adjustment modules 6 are arranged at equal intervals in the circumferential direction of the accommodating hole 3, and four positioning modules 8 are also arranged at equal intervals in the circumferential direction of the accommodating hole 3, and the first positioning adjustment modules 6 and the positioning modules 8 are alternately arranged in the circumferential direction of the accommodating hole 3, that is, in the circumferential direction of the accommodating hole 3, the two sides of each first positioning adjustment module 6 are provided with positioning modules 8, and the two sides of each positioning module 8 are provided with first positioning adjustment modules 6. In this way, the adjustment effect and the positioning effect can be better balanced, the gas shower head 5 can be adjusted in more directions, and the stress of the gas shower head 5 is more balanced, and the positioning is more stable.

[0069] In some embodiments, the fixing member 601 is connected to the carrier 2 to move and / or rotate, and the positioning and de-positioning of the RF isolating ring 4 and the gas shower head 5 are achieved by moving and / or rotating the compression member 602 to reciprocate. That is, on the basis of the above structure, the positioning and de-positioning of the RF isolating ring 4 and the gas shower head 5 can be achieved in various ways, for example, the compression and separation can be achieved by moving the fixing member 601 and the compression member 602 synchronously relative to the carrier 2, the RF isolating ring 4 and the gas shower head 5 in the axial direction to approach and move away from the gas shower head 5, or the compression and separation can be achieved by rotating the fixing member 601 and the compression member 602 synchronously relative to the carrier 2, the RF isolating ring 4 and the gas shower head 5 with the connecting shaft of the fixing member 601 and the carrier 2 as the center to approach and move away from the gas shower head 5, or the compression and separation can be achieved by moving and rotating the compression member 602 on the fixing member 601, wherein, considering the simplification of the structure, the convenience of the operation and the reliability of the switching, the way of moving the fixing member 601 and the compression member 602 synchronously relative to the carrier 2, the RF isolating ring 4 and the gas shower head 5 in the axial direction to approach and move away from the gas shower head 5 is preferred as the operation mode of the positioning and de-positioning.

[0070] Specifically, in order to realize the positioning and de-positioning operation mode of the gas shower head 5 by the axial synchronous movement of the fixing member 601 and the pressing member 602, as shown in FIG. 2, the fixing member 601 is provided with a first through hole 603 arranged along the axial direction of the RF isolating ring 4, the carrier 2 is provided with a first threaded hole 604 arranged along the axial direction of the RF isolating ring 4, and the pressing bolt 605 passing through the first through hole 603 can press or release the RF isolating ring 4 and the gas shower head 5 by changing the depth of screwing into the first threaded hole 604. In this structure, the fixing member 601 is vertically arranged on the carrier 2 along the axial direction, the pressing member 602 is connected to the top end of the fixing member 601 and located above the RF isolating ring 4 and the gas shower head 5, and the first through hole 603 is arranged on the fixing member 601 and penetrates the fixing member 601 along the axial direction to allow the pressing bolt 605 to pass through, while the first threaded hole 604 is arranged on the carrier 2 along the axial direction at the position for arranging the fixing member 601, and the pressing bolt 605 passing through the first through hole 603 can be screwed into the first threaded hole 604 to be threadedly connected with the first threaded hole 604, and as the pressing bolt 605 is screwed deeper into the first threaded hole 604, the pressing bolt 605 can drive the fixing member 601 and the pressing member 602 on the fixing member 601 to move closer to the carrier 2, the RF isolating ring 4 and the gas shower head 5, and finally press the gas shower head 5 by the pressing member 602, and as the pressing bolt 605 is gradually unscrewed out of the first threaded hole 604, the fixing member 601 and the pressing member 602 can move upwardly by a small amount to release the gas shower head 5, the pressing force is eliminated, and the positioning is released. In addition, other structures can also be used to realize the pressing and releasing described above, for example, the fixing member 601 is fixedly arranged on the carrier 2, the fixing member 601 is fixed and does not move relative to the carrier 2 (i.e., does not move), and the pressing member 602 moves along the axial direction on the fixing member 601 through a guide rail slider mechanism or the like, so that only the upward and downward movement of the pressing member 602 can realize the pressing and releasing of the gas shower head 5.

[0071] In some embodiments, as shown in FIGS. 5 and 6, the adjusting mechanism comprises a second through hole 606, a moving piece 607, a third threaded hole 609, and an adjusting piece 610. The second through hole 606 is arranged on the fixing piece 601 along the radial direction of the RF isolating ring 4; one end of the moving piece 607 extends into the second through hole 606 and can move in the second through hole 606, and the other end of the moving piece 607 is located on the side of the fixing piece 601 away from the RF isolating ring 4, and a second threaded hole 608 is arranged at this end; the third threaded hole 609 is arranged on the fixing piece 601 along the radial direction of the RF isolating ring 4, and the screw direction is opposite to that of the second threaded hole 608; the adjusting piece 610 has a screw rod part which is screwed with the second threaded hole 608 and the third threaded hole 609. The moving piece 607 is a component which contacts and pushes the gas shower head 5 to move radially, and a pushing rod 6071 can be arranged on the main body of the moving piece 607. In order to improve the stability of movement and increase the contact area with the gas shower head 5, two pushing rods 6071 parallel to each other can be arranged on the main body of the moving piece 607, so that the whole moving piece 607 forms a concave structure, and the second threaded hole 608 can be arranged at the part of the concave structure opposite to the opening (i.e. the position of the main body between the two pushing rods 6071), so that the adjusting piece 610 passes through the moving piece 607 from this part, and the third threaded hole 609 arranged on the fixing piece 601 is coaxially arranged with the second threaded hole 608, the screw directions of the two threaded holes are opposite, and the adjusting piece 610 can be a knob bolt which is convenient for manual operation. The screw rod part of the knob bolt extends into the third threaded hole 609 after passing through the second threaded hole 608. When it is necessary to adjust the concentricity between the gas shower head 5 and the RF isolating ring 4, since the pushing rod 6071 and the knob bolt are both arranged radially relative to the gas shower head 5, when the knob bolt is turned, the pushing rod 6071 will advance or retreat in the second through hole 606. Specifically, when the knob bolt is turned forward so that the screw rod part thereof is screwed out of the third threaded hole 609, since the screw directions of the third threaded hole 609 and the second threaded hole 608 are opposite, the moving piece 607 approaches the fixing piece 601 under the driving of the screw rod part, and then the pushing rod 6071 advances, and the advancing pushing rod 6071 pushes the gas shower head 5 to approach the center of the RF isolating ring 4 until the concentricity is achieved. When the knob bolt is turned reversely so that the screw rod part thereof extends into the third threaded hole 609, the moving piece 607 moves away from the fixing piece 601 under the driving of the screw rod part, and then the pushing rod 6071 retreats to move away from the center of the RF isolating ring 4 until it separates from the gas shower head 5 and has a certain gap with the gas shower head 5, so that the gas shower head 5 can move under the pushing of the adjusting mechanism on the opposite side.According to the real-time concentric state of the gas shower head 5, the adjusting mechanism of the plurality of first positioning adjusting modules 6 in the circumferential direction of the accommodating hole 3 can be adjusted in coordination, so that the gas shower head 5 can be more quickly and accurately moved to the position concentric with the radio frequency isolation ring 4.

[0072] Further, as shown in FIGS. 2, 5 and 6, the first positioning adjusting module 6 further comprises an insulating pad 611 arranged on the fixing member 601 and the pressing member 602 and used to contact the radio frequency isolation ring 4 and the gas shower head 5. The insulating pad 611 functions to realize the insulation of the fixing member 601 and the pressing member 602 from the gas shower head 5 and the radio frequency isolation ring 4, block the radio frequency energy, and avoid abnormal discharge of the radio frequency energy from the semiconductor process chamber 1 at the position where the first positioning adjusting module 6 is arranged. Specifically, the insulating pad 611 is an L-shaped structure matched with the combined structure of the fixing member 601 and the pressing member 602, and the edge of the insulating pad 611 has a wrapping edge wrapping the fixing member 601 and the pressing member 602, as shown in FIG. 5. In addition, in order to better block the radio frequency energy, the positioning module 8 also comprises the same (identical including same structure, same material and same connection mode) insulating pad 611, so that the radio frequency energy cannot be abnormally discharged from the position where the positioning module 8 is arranged.

[0073] In some embodiments, as shown in FIG. 2, the assembly structure of the carrier 2, the RF isolation ring 4 and the gas shower head 5 is as follows: the RF isolation ring 4 includes a cylindrical portion 401 and a first flange portion 402, the cylindrical portion 401 is located in the accommodating hole 3, and the first flange portion 402 is provided at the top end of the cylindrical portion 401 and protrudes outward in the radial direction relative to the cylindrical portion 401; the gas shower head 5 includes a main body portion 501 and a second flange portion 502, the main body portion 501 passes through the accommodating hole 3 (the main body portion 501 is the part of the gas shower head 5 other than the second flange portion 502), and the second flange portion 502 is provided at the top end of the main body portion 501 and protrudes outward in the radial direction relative to the main body portion 501; wherein the first flange portion 402 is lapped on the edge of the accommodating hole 3 to realize the bearing of the carrier 2 on the RF isolation ring 4; and the second flange portion 502 is lapped on the first flange portion 402 to realize the bearing of the carrier 2 on the gas shower head 5. The RF isolation ring 4 with the first flange portion 402 and the cylindrical portion 401 is similar to a flange structure, which can make the outwardly protruding first flange portion 402 lapped on the edge of the accommodating hole 3, thereby realizing the suspension on the carrier 2, while in order to ensure the isolation effect of the RF energy, it needs to have the cylindrical portion 401 located in the accommodating hole 3, and in some embodiments, the axial length of the cylindrical portion 401 is greater than or equal to the depth of the accommodating hole 3 (the depth of the accommodating hole 3 is the thickness of the plate-shaped carrier 2), based on the same principle, the gas shower head 5 also has the outwardly protruding second flange portion 502, and through the lapping of the second flange portion 502 on the first flange portion 402, the suspension of the gas shower head 5 on the RF isolation ring 4 can be realized, so that the stacking (overlapping placement) of the RF isolation ring 4 and the gas shower head 5 on the carrier 2 in turn is realized. Such structure not only has a simple structure, but also facilitates the assembly of the carrier 2, the RF isolation ring 4 and the gas shower head, and also facilitates the compression positioning of the compression member 602 in cooperation with the compression member 602, so this assembly structure is the preferred structure of the present application. In addition, the assembly of the carrier 2, the RF isolation ring 4 and the gas shower head can also be realized in other ways, for example, the accommodating hole 3 is provided as a tapered hole (the top opening is large and the bottom opening is small), the RF isolation ring 4 is provided as a tapered ring (the top opening is large and the bottom opening is small), and the gas shower head 5 still has a flange protruding outwardly, the outer tapered surface of the RF isolation ring 4 realizes the bearing of the carrier 2 on the RF isolation ring 4 by being attached to the conical side surface of the accommodating hole 3, and the gas shower head 5 still adopts the lapping manner as described above, but is directly lapped on the carrier 2, so that the assembly of the carrier 2, the RF isolation ring 4 and the gas shower head can also be realized, and at the same time, the concentric adjustment and compression positioning are not affected.

[0074] As shown in FIG. 1, on the basis of the above structure, the upper electrode assembly provided by the application further comprises an insulating gas inlet block 9, a radio frequency shielding cover 10 and a metal gas inlet block 11. The insulating gas inlet block 9 is arranged at the gas inlet end of the gas shower head 5 and communicates with the gas shower head 5, so as to introduce gas into the gas shower head 5; the radio frequency shielding cover 10 is penetrated by the insulating gas inlet block 9 and is sealingly connected with the insulating gas inlet block 9, and the edge of the cover mouth is connected with the carrier 2, so as to realize the closure of the semiconductor process chamber 1 and prevent the radio frequency energy from escaping from the semiconductor process chamber 1; the metal gas inlet block 11 is connected with the insulating gas inlet block 9 and communicates with the insulating gas inlet block 9, and is located outside the radio frequency shielding cover 10. The metal gas inlet block 11 is the initial gas inlet end of the upper electrode assembly and can be made of aluminum; the insulating gas inlet block 9 communicates with the metal gas inlet block 11 to serve as the gas inlet channel of the process gas and the plasma, and also serves to block the radio frequency energy from being led out from the gas inlet position. The insulating gas inlet block 9 can be made of ceramic. The radio frequency shielding cover 10 serves to prevent the radio frequency energy in the semiconductor process chamber 1 from escaping and avoid the radio frequency energy interference between adjacent semiconductor process chambers 1.

[0075] In some embodiments, as shown in FIGS. 2-4, the carrier 2 is provided with a gas guiding channel 7 for guiding inert gas, which introduces the inert gas into the semiconductor process chamber 1 and flows to the exhaust port 1302 of the semiconductor process chamber 1 under the guidance of the radio frequency isolation ring 4 and the gas shower head 5, as shown by the dashed arrow in FIG. 2. The carrier 2 is further improved in the application, i.e. the gas guiding channel 7 is arranged on the carrier 2 to guide the inert gas into the semiconductor process chamber 1. The reason for guiding the inert gas into the semiconductor process chamber 1 is that the parasitic plasma is prone to occur in the gap between the upper electrode assembly and the cavity 20 surrounding the semiconductor process chamber 1 during the process and cannot be discharged, which affects the processing efficiency of the plasma. The gas guiding channel 7 is arranged on the carrier 2 and introduces the inert gas into the semiconductor process chamber 1, and the inert gas is guided by the radio frequency isolation ring 4 and the gas shower head 5 to flow to the exhaust port 1302 of the semiconductor process chamber 1, which can avoid abnormal discharge and plasma aggregation near the above-mentioned gap outside the reaction area, and also avoid the infiltration of external gas, preventing the chemical source prone to react with air from reacting to generate particles that cannot be eliminated in the gap.

[0076] Specifically, as shown in FIG. 4, the gas guiding passage 7 comprises a ring passage 701, gas guiding holes 702 and a guiding passage 703. The ring passage 701 is arranged around the accommodating hole 3; the gas guiding holes 702 are communicated with the ring passage 701 and the accommodating hole 3, and are evenly arranged in the circumferential direction of the accommodating hole 3; the guiding passage 703 is communicated with the ring passage 701, and forms an air inlet hole 704 on the surface of the carrier 2. The inert gas enters the guiding passage 703 through the air inlet hole 704, flows into the ring passage 701 through the guiding passage 703, and fills the ring passage 701. Since the ring passage 701 is arranged around the accommodating hole 3, the inert gas can be distributed to each part in the circumferential direction of the accommodating hole 3, and then evenly enters the accommodating hole 3 through the multiple gas guiding holes 702 which are communicated with the ring passage 701 and are evenly arranged in the circumferential direction, so that the gas spraying head 5 and the exhaust ring 13 to be described below are always filled with inert gas during the process, thereby avoiding abnormal discharge and plasma aggregation near the gap, and also ensuring that external gas cannot penetrate, avoiding that the chemical source which is easy to react with air reacts here to generate particles which cannot be discharged and affect the final film quality.

[0077] In addition, the embodiment of the present application further provides a semiconductor process chamber 1 comprising the above-mentioned upper electrode assembly.

[0078] In addition, the semiconductor process chamber 1 further comprises a lower electrode assembly, which comprises a heating base 17 constituting a lower electrode, which is used to provide support for the wafer and the required process temperature; and a pin needle 18 (or pin needle) which passes through the heating base 17, and the heating base 17 can be lifted relative to the pin needle 18. When the heating base 17 is in the original position, the robot can quickly place the wafer on the pin needle 18. During the process, the heating base 17 will rise relative to the pin needle 18 so that the wafer is attached to the heating base 17. The pin needle 18 is arranged on a leveling plate 19, and the leveling plate 19 is arranged at the bottom of the semiconductor process chamber 1, and multiple leveling bolts are arranged in the circumferential direction of the leveling plate 19. The leveling of the leveling plate 19 can be realized by lifting the leveling bolts at different positions, so that the pin needles 18 on the leveling plate 19 are leveled, that is, the heights of the top ends of the pin needles 18 are consistent.

[0079] As shown in FIG. 1 and FIG. 8-10, the semiconductor process chamber 1 further comprises an exhaust assembly disposed in the semiconductor process chamber 1 and located at the bottom of the upper electrode assembly, the exhaust assembly comprising: a support ring 12, an exhaust ring 13, a flow control ring 14 and a second positioning adjustment module 15. Wherein, the support ring 12 is disposed in the semiconductor process chamber 1 and surrounds the outside of the lower electrode assembly of the semiconductor process chamber 1; the exhaust ring 13 has an exhaust passage 1301 and is supported by the support ring 12 at the top of the support ring 12; the flow control ring 14 is supported by the support ring 12 at the top of the support ring 12 and surrounds the exhaust port 1302 of the exhaust passage 1301 with the exhaust ring 13; the second positioning adjustment module 15 is disposed at the top of the support ring 12 and is used to adjust the concentricity of the support ring 12, the exhaust ring 13 and the flow control ring 14, and adjust the concentricity of the exhaust assembly and the upper electrode assembly. Wherein, the exhaust ring 13 is used to form the exhaust passage 1301 to exhaust the reaction exhaust gas and by-products in the semiconductor process chamber 1; the flow control ring 14 can change the size of the exhaust port 1302 of the exhaust passage 1301, thereby realizing the adjustment of the exhaust flow of the reaction exhaust gas and by-products; the support ring 12 is used to support the exhaust ring 13 and the flow control ring 14, so that the exhaust ring 13 is disposed close to the gas shower head 5, and the support ring 12, the flow control ring 14 and the exhaust ring 13 all surround the outside of the lower electrode assembly and have a radial gap with the heating susceptor 17. On this basis, the semiconductor process chamber 1 provided by the application further adds the second positioning adjustment module 15, which can avoid the influence of machining errors and the possible movement and expansion of the components under high temperature process, ensure the high concentricity of the exhaust ring 13, the flow control ring 14 and the support ring 12, so that the radial gap between them and the heating susceptor 17 is equal in width at each part of the heating susceptor 17 in the circumferential direction, thereby ensuring that the gas flow field in the semiconductor process chamber 1 is more stable during the process operation. Moreover, the second positioning adjustment module 15 can also realize the high concentricity with the upper electrode assembly by adjusting the concentricity of the exhaust ring 13, the flow control ring 14 and the support ring 12, thereby ensuring the high concentricity of the entire reaction area, ensuring the stability of the gas flow field and the plasma field, and ensuring the film quality.

[0080] Specifically, as shown in FIGS. 8 and 9, the second positioning adjusting module 15 comprises a limiting piece 1501, which comprises a connecting block 15011 for connecting with the support ring 12, the connecting block 15011 being provided with a fourth threaded hole 1503; a limiting plate 15012 connected to the connecting block 15011 and abutting against the exhaust ring 13; a limiting block 15013 connected to the limiting plate 15012 and abutting against the flow control ring 14; and an adjusting assembly connecting the support ring 12 and the limiting piece 1501 and capable of adjusting the radial distance between the support ring 12 and the limiting piece 1501, so as to change the concentricity of the exhaust ring 13 and the support ring 12 and / or change the concentricity of the flow control ring 14 and the support ring 12 through the limiting piece 1501. Specifically, the adjusting assembly comprises an adjusting sleeve 1502, which is provided with an external thread on an outer peripheral wall and an internal thread on an inner peripheral wall, and is connected to the fourth threaded hole 1503 through the external thread; and an adjusting bolt 1504, which is arranged in the adjusting sleeve 1502 and comprises a first screw rod portion 15041 and a second screw rod portion 15042 coaxially connected to the first screw rod portion 15041, the second screw rod portion 15042 having a smaller pitch than the first screw rod portion 15041 and a smaller diameter than the first screw rod portion 15041 to avoid interference between the thread on the second screw rod portion 15042 and the internal thread, wherein the first screw rod portion 15041 is threadedly connected to the internal thread, and the second screw rod portion 15042 is threadedly connected to a fifth threaded hole 1505 provided on the support ring 12. In this structure, the limiting piece 1501 is a basic component of the second positioning adjusting module 15, the adjusting sleeve 1502 and the adjusting bolt 1504 are arranged on the limiting piece 1501, and the limiting piece 1501 comprises the limiting plate 15012 cooperating with the exhaust ring 13, the limiting block 15013 cooperating with the flow control ring 14, and the connecting block 15011 cooperating with the support ring 12, the adjusting sleeve 1502 is connected to the limiting piece 1501 by being threadedly connected to the fourth threaded hole 1503 on the connecting block 15011, the first screw rod portion 15041 of the adjusting bolt 1504 is threadedly connected to the adjusting sleeve 1502 by cooperating with the internal thread, and the second positioning adjusting module 15 is connected to the support ring 12 by screwing the second screw rod portion 15042 of the adjusting bolt 1504 into the fifth threaded hole 1505 provided on the support ring 12.In the assembly, the adjusting bolt 1504 is first threaded through the adjusting sleeve 1502, specifically, the first screw portion 15041 is connected with the inner thread of the adjusting sleeve 1502 by screwing, and then the second screw portion 15042 of the adjusting bolt 1504 is screwed into the fifth threaded hole 1505 and connected with the fifth threaded hole 1505, during the screwing, since the pitch of the first screw portion 15041 is greater than the pitch of the second screw portion 15042, when the adjusting bolt 1504 rotates by the same angle, the axial distance of the adjusting sleeve 1502 moving on the first screw portion 15041 is greater than the distance of the second screw portion 15042 deepening into the fifth threaded hole 1505, so that the limiting piece 1501 can quickly abut against or move away from the exhaust ring 13, the flow control ring 14 and the support ring 12, when the concentricity of the exhaust ring 13, the flow control ring 14 and the support ring 12 needs to be adjusted, the adjusting bolt 1504 is kept from rotating, but the adjusting sleeve 1502 is rotated, the rotation of the adjusting sleeve 1502 can realize the axial movement on the adjusting bolt 1504 through the cooperation of the inner thread, the axial movement is specifically the radial movement of the support ring 12, and the limiting piece 1501 is driven to move radially on the support ring 12, so that the radial movement of the limiting piece 1501 can push the exhaust ring 13 and the flow control ring 14 to move radially relative to the support ring 12, to realize the adjustment of the concentricity; when the adjusting sleeve 1502 is not rotated, the second positioning and adjusting module 15 realizes the positioning of the exhaust ring 13 and the flow control ring 14 through the threaded connection of the adjusting bolt 1504 and the fifth threaded hole 1505.

[0081] Further, the spiral directions of the outer thread and the inner thread of the adjusting sleeve 1502 are opposite, by such arrangement, for example, when the adjusting sleeve 1502 is rotated to move away from the support ring 12, the limiting piece 1501 can move close to the support ring 12, so that the fine adjustment of the spacing between the limiting piece 1501 and the support ring 12 can be realized.

[0082] In addition, a hexagonal socket is arranged at the end of the adjusting sleeve 1502, to facilitate the screwing operation.

[0083] As shown in FIG. 10, the second positioning and adjusting module 15 is also arranged with multiple in the circumferential direction of the support ring 12, so that the concentricity adjustment of the exhaust ring 13, the flow control ring 14 and the support ring 12 in multiple directions can be realized. Further, when multiple second positioning and adjusting modules 15 are arranged in the circumferential direction, they are only distributed in the 180-degree angle range of the circumferential direction, and the interval angle between adjacent two is 90 degrees, so that the precise adjustment of the concentricity of the exhaust ring 13, the flow control ring 14 and the support ring 12 can be realized, and the number of the second positioning and adjusting modules 15 can be reduced, and the structure of the semiconductor process chamber 1 is simplified.

[0084] The flow control ring 14 includes a plurality of different thicknesses, each flow control ring 14 cooperates with the exhaust ring 13 to form exhaust ports 1302 of different sizes. That is, the size of the exhaust port 1302 is adjusted by replacing the flow control ring 14 of different thickness.

[0085] In the prior art, the process flow gas area of the semiconductor process chamber 1 is sealed by a sealing ring, which not only needs regular maintenance, but also has the risk of sealing ring failure, resulting in radio frequency crosstalk between the two semiconductor process chambers 1. The above-mentioned exhaust assembly in the semiconductor process chamber 1 provided by the present application, the exhaust ring 13, the flow control ring 14 and the support ring 12 are not provided with sealing rings, which avoids the corrosion of corrosive gas to the sealing ring or the penetration of external gas to generate particles at the sealing ring, reduces the maintenance cost and improves the stability of the process operation.

[0086] For the foregoing inert gas introduction path, as shown in FIG. 2, under the support of the support ring 12, the exhaust ring 13 extends into the space surrounded by the gas shower head 5, the radio frequency isolation ring 4, the carrier 2 and the cavity 20 of the semiconductor process chamber 1, and the exhaust ring 13 has a gap between the radio frequency isolation ring 4 and the gas shower head 5, so as to guide the inert gas introduced by the gas guide channel 7 to the exhaust port 1302 of the exhaust channel 1301, as shown by the dashed arrow in FIG. 2. That is, after the inert gas enters the accommodation hole 3, it will flow along the gap between the exhaust ring 13 and the radio frequency isolation ring 4, the gap between the exhaust ring 13 and the gas shower head 5 to the exhaust port 1302 of the exhaust channel 1301 in turn, and form a gas curtain at the exhaust port 1302 to isolate the reaction gas, so as to avoid abnormal discharge and plasma aggregation near the gap, and also ensure that external gas cannot penetrate, avoid the chemical source that is easy to react with air to react here to generate particles that cannot be removed to affect the quality of the final film.

[0087] Further, the embodiment of the present application also provides a semiconductor process equipment, which comprises the semiconductor process chamber 1 and further comprises a radio frequency source for generating radio frequency energy, and the radio frequency source is arranged outside the semiconductor process chamber 1. As shown in Fig. 11, the semiconductor process equipment provided by the present application comprises a plurality of semiconductor process chambers 1, and each semiconductor process chamber 1 is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly and a radio frequency source 16 connected therewith, wherein: the radio frequency source 16 is used for feeding radio frequency energy generated by the radio frequency source into the semiconductor process chamber 1, and in a specific arrangement, the radio frequency source 16 has two feeding points in each semiconductor process chamber 1, and the included angle formed by the two feeding points and the center (or axis) of the semiconductor process chamber 1 is 180 degrees; and / or the carrier 2 is a plate-shaped member provided with two accommodating holes 3, the two accommodating holes 3 are respectively arranged in the two semiconductor process chambers 1, and the radio frequency sources 16 of the two semiconductor process chambers 1 are arranged in a mirror image. In this structure, the radio frequency source 16 feeds radio frequency energy into the semiconductor process chamber 1, in order to avoid mutual interference of the radio frequency field between the multiple chambers, a radio frequency shield 10 is specially arranged on the entire upper electrode assembly, the radio frequency source 16 penetrates the radio frequency shield 10 and feeds radio frequency energy into the gas shower head 5, so as to realize energy feeding. In the present application, in order to further ensure the symmetry of energy feeding, the radio frequency source 16 of each semiconductor process chamber 1 has two feeding points, the two feeding points are arranged in a 180° symmetry about the center of the semiconductor process chamber 1 inside the radio frequency shield 10, specifically, the radio frequency source 16 feeds radio frequency energy into the semiconductor process chamber 1 through a connecting strip 21, and the two ends of the connecting strip 21 are the two feeding points. Since the connecting strip 21 is semicircular, the included angle between the two ends thereof is 180 degrees, and in a specific arrangement, the semicircular connecting strip 21 is also made concentric with the semiconductor process chamber. At the same time, the carrier 2 is arranged in a plate shape and is provided with two accommodating holes 3, each accommodating hole 3 is arranged in a semiconductor process chamber 1, and each semiconductor process chamber 1 is provided with a radio frequency source 16, and the radio frequency sources 16 arranged in the two semiconductor process chambers 1 are arranged in a mirror image, so as to reduce the energy interference between the semiconductor process chambers 1.

[0088] The working process of the semiconductor process equipment is as follows: before entering the process, the process position height at which the heating base 17 needs to be located is determined in an atmospheric environment, and the relative level of the top pin 18 and the heating base 17 is adjusted through the leveling plate 19; in combination with the corresponding finished product size of the semiconductor process chamber 1, the exhaust ring 13, the flow control ring 14 and the support ring 12, and according to the required temperature of the process reaction, the maximum eccentricity allowed between the exhaust ring 13, the flow control ring 14 and the support ring 12 is determined, the second positioning adjustment module 15 is adjusted to ensure the precise concentricity of the exhaust ring 13, the flow control ring 14 and the support ring 12, and after the expected adjustment, the concentricity is adjusted according to the current concentricity, the gas shower head 5 is moved in the corresponding radial direction through the rotary adjusting piece 610, so that the precise concentricity of the upper electrode assembly, the wafer and the lower electrode assembly is achieved; then the heating base 17 is lowered to the wafer transfer position, after the semiconductor process chamber 1 enters the vacuum environment, the heating base 17 starts to heat and ensure the final process; after the wafer is placed on the top pin 18 by the mechanical hand, the heating base 17 starts to rise to the process position, at the same time, the inert gas enters the reaction zone through the bearing piece 2 to ensure that the gap between the gas shower head 5 and the exhaust ring 13 is filled with inert gas, and then the process gas is introduced into the semiconductor process chamber 1 to perform the corresponding process reaction.

[0089] The above describes the basic principles of the present application in combination with specific embodiments, but it should be pointed out that the advantages, advantages, effects and the like mentioned in the present application are only examples and cannot be considered as mandatory for each embodiment of the present application. In addition, the above-mentioned specific details are only for the purpose of example and understanding, and are not limited to the above-mentioned specific details.

[0090] The block diagrams of the devices, apparatuses, equipment and systems involved in the present application are only illustrative examples and are not intended to require or imply the connection, arrangement and configuration shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, equipment and systems can be connected, arranged and configured in any way. Words such as "include", "contain", "have" and the like are open-ended words, which mean "including but not limited to", and can be used interchangeably. The words "or" and "and" used herein mean the word "and / or", and can be used interchangeably unless the context clearly indicates otherwise. The word "such as" used herein means the phrase "such as but not limited to", and can be used interchangeably.

[0091] It should also be noted that in the devices, equipment and methods of the present application, each component or each step can be decomposed and / or recombined. These decompositions and / or recombination should be considered as equivalent solutions of the present application.

[0092] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use the application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0093] It should be understood that the limiting words "first", "second", "third", "fourth", "fifth" and "sixth" used in the embodiments description of the present application are only used for more clearly describing the technical solutions, and cannot be used to limit the protection scope of the present application.

[0094] The above description has been presented for the purpose of illustration and description. Furthermore, this description is not intended to limit the embodiments of the application to the forms disclosed herein. Although several example aspects and embodiments have been discussed above, those of ordinary skill in the art will appreciate a variety of modifications, alternatives, permutations, additions, and sub-combinations of the described aspects and embodiments.

Claims

1. A top electrode assembly, characterized by, A carrier is fixedly arranged on a cavity of a semiconductor process chamber, and is provided with a receiving hole. A radio frequency isolation ring is carried by the carrier and at least partially located in the receiving hole, and is used to block radio frequency energy. A gas shower head passes through a ring cavity of the radio frequency isolation ring, and is carried by the radio frequency isolation ring, and is at least used to feed radio frequency energy into the semiconductor process chamber. A first positioning and adjusting module includes a fixing member arranged on the carrier and located outside the radio frequency isolation ring, a pressing member connected to the fixing member and extending towards the center of the radio frequency isolation ring, and capable of cooperating with the carrier to achieve clamping positioning of the radio frequency isolation ring and the gas shower head, and an adjusting mechanism arranged on the fixing member and capable of moving along the radial direction of the radio frequency isolation ring to push the gas shower head to move radially. The carrier is provided with a gas guide channel for guiding inert gas, the inert gas guided by the gas guide channel flows to an exhaust port of the semiconductor process chamber under the guidance of the radio frequency isolation ring and the gas shower head.

2. The upper electrode assembly of claim 1, wherein Further comprising a positioning module for positioning the radio frequency isolation ring and the gas shower head, a plurality of the first positioning and adjusting module and the positioning module are arranged in the circumferential direction of the receiving hole, and the first positioning and adjusting module and the positioning module are alternately arranged in the circumferential direction of the receiving hole.

3. The upper electrode assembly of claim 1, wherein The fixing member is connected to move and / or rotate on the carrier, and the pressing member is driven to reciprocatingly move and / or rotate to achieve positioning and de-positioning of the radio frequency isolation ring and the gas shower head.

4. The upper electrode assembly of any of claims 1-3, wherein, The adjusting mechanism includes:

5. The upper electrode assembly of claim 1, wherein A second through hole is arranged on the fixing member in the radial direction of the radio frequency isolation ring; A moving member has one end extending into and moving in the second through hole, and the other end located on the side of the fixing member away from the radio frequency isolation ring and provided with a second threaded hole; A third threaded hole is arranged on the fixing member in the radial direction of the radio frequency isolation ring, and the screw thread direction is opposite to that of the second threaded hole; An adjusting member has a screw rod portion threadedly cooperating with the second threaded hole and the third threaded hole. The first positioning and adjusting module further includes an insulating pad arranged on the fixing member and the pressing member and used to contact the radio frequency isolation ring and the gas shower head.

6. The upper electrode assembly of claim 1 or 5, wherein 7. The upper electrode assembly of claim 1, 2, 3, or 5, wherein: The radio frequency isolation ring includes a cylindrical portion located in the receiving hole, and a first flange portion arranged at the top end of the cylindrical portion and protruding radially outward relative to the cylindrical portion; The gas shower head includes a main body portion passing through the receiving hole, and a second flange portion arranged at the top end of the main body portion and protruding radially outward relative to the main body portion; ​ The first flange part is overlapped on the edge of the accommodating hole to realize the bearing of the bearing part to the radio frequency isolation ring; and the second flange part is overlapped on the first flange part to realize the bearing of the bearing part to the gas spraying head.

8. The upper electrode assembly of claim 2, wherein The gas guide channel comprises: An annular channel is arranged around the accommodating hole; A plurality of gas guide holes are arranged uniformly in the circumferential direction of the accommodating hole and are communicated between the annular channel and the accommodating hole; An import channel is communicated with the annular channel and forms an air inlet hole on the surface of the bearing part.

9. A semiconductor process chamber, characterized by, The semiconductor processing chamber comprises a cavity and an upper electrode assembly arranged on the cavity, wherein the upper electrode assembly is the upper electrode assembly according to any one of claims 1-8.

10. The semiconductor process chamber of claim 9, wherein, The semiconductor processing chamber further comprises an exhaust assembly arranged in the semiconductor processing chamber, wherein the exhaust assembly comprises: A support ring is arranged around the outside of the lower electrode assembly; An exhaust ring is arranged on the top of the support ring and has an exhaust channel; A flow control ring is arranged on the top of the support ring and surrounds the exhaust port of the exhaust channel with the exhaust ring; A second positioning and adjusting module is arranged on the top of the support ring and is used to adjust the concentricity of the support ring, the exhaust ring and the flow control ring, and to adjust the concentricity of the exhaust assembly and the upper electrode assembly.

11. The semiconductor process chamber of claim 10, wherein, The second positioning and adjusting module comprises: A limiting piece comprises a connecting block used to connect with the support ring, a limiting plate connected on the connecting block and used to abut against the exhaust ring, and a limiting block connected on the limiting plate and used to abut against the flow control ring; An adjusting assembly is connected between the support ring and the limiting piece and can adjust the radial distance between the support ring and the limiting piece, so as to change the concentricity of the exhaust ring and the support ring and / or change the concentricity of the flow control ring and the support ring through the limiting piece.

12. The semiconductor process chamber of claim 10 or 11, wherein, A plurality of the second positioning and adjusting modules are arranged in the circumferential direction of the support ring.

13. The semiconductor process chamber of claim 10, wherein, The flow control ring comprises a plurality of rings with different thicknesses, and each of the flow control rings cooperates with the exhaust ring to form an exhaust port with different sizes.

14. The semiconductor process chamber of claim 10, wherein, The exhaust ring extends into the space surrounded by the gas spraying head, the radio frequency isolation ring, the bearing part and the cavity under the support of the support ring, and the exhaust ring has a gap between the radio frequency isolation ring and the gas spraying head to guide the inert gas guided by the gas guide channel to the exhaust port of the exhaust channel.

15. A semiconductor process apparatus, characterized by, The semiconductor processing apparatus comprises a plurality of the semiconductor processing chambers, and each of the semiconductor processing chambers is provided with an upper electrode assembly, an exhaust assembly, a lower electrode assembly and the radio frequency source connected therewith, wherein:

16. The semiconductor process apparatus according to claim 15, wherein The radio frequency source is used to feed radio frequency energy into the semiconductor processing chamber, and the radio frequency source has two feeding points in each of the semiconductor processing chambers, and the included angle formed by the two feeding points and the center line of the semiconductor processing chamber is 180 degrees; and / or ​ ​ The carrier is a plate-shaped member with two accommodating holes, the two accommodating holes are respectively located in two semiconductor process chambers, and radio frequency sources of the two semiconductor process chambers are mirror-imaged arranged.

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