Optoelectronic component

Abstract

An optoelectronic component (100, 200, 300, 400, 500, 600, 700) comprises at least one light emitting diode (101). The light emitting diode (101) comprises a substrate (102), an optoelectronic semiconductor chip (105) and a wavelength converting element (108). The substrate (102) comprises a top side (103) and a bottom side (104) opposite the top side (103). The optoelectronic semiconductor chip (105) is arranged with its mount face (106) at the top side (103) of the substrate (102) and designed to emit electromagnetic radiation at an emission face (107) opposite the mount face (106). The wavelength converting element (108) is arranged at the emission face (107) of the optoelectronic semiconductor chip (105) and tapering towards the emission face (107). The wavelength converting element (108) protrudes over the optoelectronic semiconductor chip (105) in a direction parallel to the top side (103) of the substrate (102).

Description

[0001] 2024PF00218 1

[0002] OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention refers to an optoelectronic component .

[0005] This patent application claims priority from German patent application DE 10 2024 123 172 . 6 , the disclosure of which is hereby incorporated by reference .

[0006] Optoelectronic components comprising optoelectronic semiconductor chips which are electrically connected with a bond pad by means of wire bonding are known from the state of the art . In an array, due to the presence of the bond pad and the bonding wire a number of rows of optoelectronic semiconductor chips is limited to two rows i f chip-to-chip distances of smaller than 500pm are required . More rows can be reali zed by omitting the bond pad and the bonding wire and using flip chips comprising a box shaped chip scale package instead . However, optoelectronic components with chip scale packages typically comprise a low pixel-to-pixel contrast .

[0007] An obj ective of the present invention is to provide an improved optoelectronic component . This obj ective is solved by an optoelectronic component comprising the features according to the main claim . Advantageous embodiments are speci fied in the dependent claims .

[0008] An optoelectronic component comprises at least one light emitting diode . The light emitting diode comprises a substrate , an optoelectronic semiconductor chip and a wavelength converting element . The substrate comprises a top side and a bottom side opposite the top side . The optoelectronic semiconductor chip is arranged with its mount face at the top side of the substrate and designed to emit electromagnetic radiation at an emission face opposite the mount face . The wavelength converting element is arranged at the emission face of the optoelectronic semiconductor chip and tapering 2024PF00218 2 towards the emission face . The wavelength converting element protrudes over the optoelectronic semiconductor chip in a direction parallel to the top side of the substrate .

[0009] Advantageously, the tapering wavelength converting element increases an optical emission area of the light emitting diode ( LED) signi ficantly . The optical emission area is formed by a top surface of the wavelength converting element which is averted from the optoelectronic semiconductor chip . For example , an optoelectronic semiconductor chip can comprise an emission face with an area of 0 . 5mm2. Due to the tapering geometry of the wavelength converting element the top surface of the wavelength converting element can comprise an area of 1mm2, for example .

[0010] As an optoelectronic semiconductor chip represents the most expensive part of an optoelectronic component , the optoelectronic component comprising a large optical emission area due to the tapering wavelength converting element can be provided more cost ef ficiently compared to an optoelectronic component comprising a non-tapering wavelength converting element with an equally si zed optical emission area .

[0011] Also , the tapering geometry is accompanied by an increased converting ef ficiency as the volume of the wavelength converting element is increased in contrast to a non-tapering wavelength converting element on an optoelectronic semiconductor chip with the same si ze . At the same time , an operational light emitting diode can comprise a suf ficient light flux of for example 2501m at an operating current of 700mA.

[0012] The emission face of the optoelectronic semiconductor chip can be covered by the wavelength converting element completely, for example . However, the wavelength converting element does not necessarily need to cover the whole emission face .

[0013] As the wavelength converting element proj ects over the optoelectronic semiconductor chip laterally, the optical emission 2024PF00218 3 area of the light emitting diode is larger than outlines of the optoelectronic semiconductor chip . In addition, the protruding part of the wavelength converting element is arranged above the top side of the substrate . Thus , a free area is reali zed at the top side of the substrate and under the protruding part of the wavelength converting element laterally next to the optoelectronic semiconductor chip . Advantageously, this free area can be used for a bond pad and a bonding wire to electrically connect the optoelectronic semiconductor chip .

[0014] In an alternative embodiment , the optoelectronic semiconductor chip can be embedded into the wavelength converting element such that the tapering wavelength converting element also covers side facets of the optoelectronic semiconductor chip extending between the mount face and the emission face , apart from covering the emission face . In this case , the area of the top surface of the wavelength converting element is not only larger than the area of the emission face of the optoelectronic semiconductor chip but also larger than an area enclosed by outlines of a side of the wavelength converting element averted from the top surface of the wavelength converting element and facing the substrate . Also , the wavelength converting element is arranged not only at the emission face of the optoelectronic semiconductor chip but also can be arranged at least partially at the top side of the substrate .

[0015] In another embodiment the wavelength converting element protrudes over the substrate in a direction parallel to the top side of the substrate . Advantageously, a ratio between the area of the top surface and the area of the emission face is even more increased in this embodiment .

[0016] In an embodiment the wavelength converting element comprises a taper angle of 85 ° to 30 ° measured with respect to the top side of the substrate . However, the taper angle is not restricted to the speci fied angle range in general . The wave- 2024PF00218 4 length converting element can comprise a rectangular crosssection parallel to the top side of the substrate . In this case , the tapering wavelength converting element comprises an inverted mesa shape . In other embodiments the wavelength converting element can comprise other shapes . However, it is expedient to provide a wavelength converting element whose cross-section geometry is similar to the outlines of the optoelectronic semiconductor chip . For example , the tapering wavelength converting element can comprise the shape of a truncated cone i f the optoelectronic semiconductor chip comprises a circular cross-section parallel to the top side of the substrate .

[0017] In an embodiment the wavelength converting element comprises a phosphor in a plastic ( PiX ) , a phosphor in glass ( PiG) , a phosphor on glass ( PoG) , a phosphor in a plastic on glass ( PiXoG) or is designed as a phosphor-platelet . The phosphor can also be called a fluorescent . As an example , the phosphor can be embedded in a silicone , an epoxy or another plastic . The phosphor can, e . g . comprise yttrium aluminium garnet (YAG) . Additionally, the phosphor can be doped with di f ferent materials in order to modi fy an emission range , such as Ce3+- ions . In another embodiment the wavelength converting element is formed as a phosphor-platelet , e . g . as a ceramic platelet comprising YAG, as an example . However, the phosphor can comprise any other suitable material . Instead of a ceramic phosphor platelet the wavelength converting element can also be designed as a ceramic phosphor layer .

[0018] The phosphor is designed to absorb electromagnetic radiation form a first spectral range emitted by the optoelectronic semiconductor chip and to re-emit electromagnetic radiation from a second wavelength range comprising lower energies than electromagnetic radiation from the first spectral range due to a relaxation in the optoelectronic system of the phosphor before re-emission . In sum, the light emitting diode is designed to emit electromagnetic radiation from a combined spectral range comprising a mixture of the first and second 2024PF00218 5 spectral range at the top surface of the wavelength converting element .

[0019] As an example , the optoelectronic semiconductor chip may be designed to emit blue light while the phosphor of the wavelength converting element is designed absorb the blue light emitted by the optoelectronic semiconductor chip and to reemit yellow light . In sum, white light can be emitted by the light emitting diode at the top surface of the wavelength converting element .

[0020] The wavelength converting element can comprise one phosphor or a plurality of di f ferent phosphors enabling to precisely choose the spectral range of electromagnetic radiation emitted by the light emitting diode . Also , the wavelength converting element can comprise only one layer or multiple stacked layers . Each layer can comprise at least one phosphor .

[0021] The tapering wavelength converting element can be produced by means of a molding method, for example . In this case, the tapering form of the wavelength converting element can be achieved by forming a matrix material comprising the phosphor . The wavelength converting element can be arranged on the emission face of the optoelectronic semiconductor chip after forming it or during the molding process . Alternatively, the wavelength converting element can be produced by machining platelets of glass comprising the phosphor . In another embodiment the glass may be machined before arranging the phosphor on the glass . In yet another embodiment , a ceramic phosphor platelet is machined before it is arranged at the emission face of the optoelectronic semiconductor chip .

[0022] In another embodiment an optical element is arranged at a top surface of the wavelength converting element averted from the emission face of the optoelectronic semiconductor chip . The optical element can comprise silicone , for example . Advanta- 2024PF00218 6 geously, the optical element allows beam shaping of emitted electromagnetic radiation .

[0023] In another embodiment the optoelectronic semiconductor chip comprises a first layer sequence arranged in the region of the mount face , a second layer sequence arranged in the region of the emission face and an active zone arranged between the first layer sequence and the second layer sequence . The light emitting diode comprises a top contact layer, a bottom contact layer and at least one buried contact . The top contact layer is arranged on the top side of the substrate . The bottom contact layer is arranged above the top contact layer with respect to the top side of the substrate and isolated electrically from the top contact layer . The optoelectronic semiconductor chip is arranged with its mount face on the bottom contact layer, whereby the first layer sequence is connected electrically to the bottom contact layer . The buried contact is electrically connected to the top contact layer and extends from the top contact layer in a direction perpendicular to the top side of the substrate through the bottom contact layer, the first layer sequence and the active zone to the second layer sequence and electrically connects the second layer sequence with the top contact layer, while the buried contact is isolated from the bottom contact layer, the first layer sequence and the active zone electrically . A contact pad is arranged on the bottom contact layer next to the optoelectronic semiconductor chip . The bottom contact layer and the contact pad are electrically connected to each other and the contact pad is connectable by a bonding wire electrically .

[0024] Advantageously, in order to connect the light emitting diode electrically, only one bonding wire and one contact pad are necessary as the second layer sequence is connected by the at least one buried contact . The provision of a plurality of buried contacts advantageously enables a homogenous current distribution across the second layer sequence , too . 2024PF00218 7

[0025] In an embodiment the optoelectronic component comprises a plurality of light emitting diodes arranged laterally next to each other at a mount surface of a carrier in a first row . Each light emitting diode comprises a substrate , an optoelectronic semiconductor chip and a wavelength converting element . The substrates each comprise a top side and a bottom side opposite the top side . The substrates of the light emitting diodes are arranged with their bottom sides at the mount surface of the carrier . The optoelectronic semiconductor chips are arranged with their mount faces at the top sides of the substrates and designed to emit electromagnetic radiation at emission faces opposite the mount faces , respectively . The wavelength converting elements are arranged at the emission faces of the optoelectronic semiconductor chips and tapering towards the emission faces , respectively . The wavelength converting elements protrude over the optoelectronic semiconductor chips in a direction parallel to the top sides of the substrates , respectively .

[0026] In this case , the optoelectronic component comprises an array of LEDs . The carrier can be designed as a printed circuit board ( PCB ) . Each light emitting diode represents a pixel of the optoelectronic component . Advantageously, the optoelectronic component comprises an improved pixel-to-pixel contrast due to tapering geometry of the wavelength converting element which increases an extraction ef ficiency . Also , an area between two directly neighbouring pixels can be reflective in order to increase the pixel-to-pixel contrast even more .

[0027] Apart from that , the optoelectronic component comprises a small pixel-to-pixel distance which is given by a lateral spacing of the top surfaces of directly neighbouring wavelength converting elements . In an embodiment the wavelength converting elements of directly neighbouring light emitting diodes comprise a minimum lateral distance parallel to the top side of the substrate of 25pm or less . Advantageously, the optoelectronic component comprises a very low pixel-to- 2024PF00218 8 pixel distance . The pixel area is defined by top surface of the wavelength converting element . The distance between directly neighbouring wavelength converting elements is minimal in the region of the top surfaces due to the tapering geometry of the wavelength converting elements .

[0028] In an embodiment the light emitting diodes are arranged laterally next to each other at the mount surface of the carrier in two or four rows . The optoelectronic component can comprise any other number of rows in general . Advantageously, optoelectronic components with di f ferent numbers of pixels can be provided . As an example , the optoelectronic can comprise twenty- four, forty-eight or eighty-eight pixels .

[0029] In an embodiment all light emitting diodes are connected in series with each other . A connection in series of all light emitting diodes can be omitted . In another embodiment the light emitting diodes of each row are connected in series with each other, respectively . Advantageously, a connection in series can increase a li fetime of the optoelectronic component .

[0030] In an embodiment first electrodes are arranged at the mount surface of the carrier . Each light emitting diode of the first row of light emitting diodes is arranged on a first electrode , respectively . Each first electrode comprises a first connection area which is not covered by a light emitting diode , respectively . Directly neighbouring light emitting diodes of the first row of light emitting diodes are connected to each other such that a contact pad of a light emitting diode is connected with a first connection area of a first electrode of a subsequent light emitting diode by a bonding wire .

[0031] The first connection areas of the first electrodes can be arranged at least partially between two directly neighbouring light emitting diodes , which is not necessary in general . However, the wavelength converting elements can protrude over 2024PF00218 9 the substrates in a direction parallel to the top sides of the substrates , respectively . In this case , a further free area underneath the parts of the wavelength converting elements protruding over the substrates and between the substrates can be used at least partially for the connection areas . Thus , a compact optoelectronic component can be provided . In general , the light emitting diodes don' t have to be arranged in a row on the mount surface of the carrier . They also don' t have to be connected in series with each other, generally .

[0032] In an embodiment the optoelectronic component comprises two rows of light emitting diodes and second electrodes arranged at the mount surface of the carrier . Each light emitting diode of a second row of light emitting diodes is arranged on a second electrode , respectively . Each second electrode comprises a second connection area which is not covered by a light emitting diode , respectively . Directly neighbouring light emitting diodes of the second row of light emitting diodes are connected to each other such that a contact pad of a light emitting diode is connected with a second connection area of a second electrode of a subsequent light emitting diode by a bonding wire . The first connection areas of the first electrodes of the first row of light emitting diodes are arranged on a side of the first row of light emitting diodes averted from the second row of light emitting diodes . The second connection areas of second electrodes of the second row of light emitting diodes are formed as conductive tracks extending towards the first connection areas .

[0033] In another embodiment the optoelectronic component comprises four rows of light emitting diodes and third and fourth electrodes arranged at the mount surface of the carrier . In this case , the LEDs of the third row are arranged on the third electrodes and the LEDs of the fourth row are arranged on the fourth electrodes . The third and fourth electrodes comprise third and fourth connection areas , respectively, which are not covered by the LEDs similarly to the first and second 2024PF00218 10 electrodes . Also , directly neighbouring light emitting diodes of the third and fourth row of light emitting diodes are connected to each other such that a contact pad of a light emitting diode is connected with a third or fourth connection area of a third or fourth electrode of a subsequent light emitting diode in the respective row by a bonding wire . Third connection areas of third electrodes of a third row of light emitting diodes are arranged on a side of the third row of light emitting diodes averted from a fourth row of light emitting diodes . Fourth connection areas of fourth electrodes of the fourth row of light emitting diodes are formed as conductive tracks extending towards the third connection areas . The first and second connection areas are arranged opposite the third and fourth connection areas .

[0034] In an embodiment first electrodes are arranged at the mount surface of the carrier . Each light emitting diode of the first row of light emitting diodes is arranged laterally next to a first electrode at the mount surface of the carrier, respectively . Each light emitting diode comprises a first contact pad and a second contact pad . Each first electrode is connected to a first contact pad by bonding wire . Directly neighbouring light emitting diodes of the first row of light emitting diodes are connected to each other such that the second contact pad of a light emitting diode is connected with a first contact pad of a subsequent light emitting diode by a bonding wire .

[0035] In an embodiment the optoelectronic component comprises two rows of light emitting diodes and second electrodes arranged at the mount surface of the carrier . Each first electrode is connected to a first contact pad of a light emitting diode of the first row by a bonding wire , respectively . Each second electrode is connected to a second contact pad of a light emitting diode of the second row by a bonding wire , respectively . Directly neighbouring light emitting diodes of each row of light emitting diodes are connected to each other such that the second contact pad of a light emitting diode is con- 2024PF00218 11 nected with a first contact pad of a subsequent light emitting diode by a bonding wire .

[0036] In an embodiment the first electrodes of the first row of light emitting diodes are arranged on a side of the first row of light emitting diodes averted from the second row of light emitting diodes . The second electrodes of the second row of light emitting diodes are arranged laterally next to the first electrodes on the side of the first row of light emitting diodes averted from the second row of light emitting diodes . The bonding wires connecting the second electrodes with the second contact pads of the light emitting diodes of the second row are arranged between the light emitting diodes of the first row and extending perpendicularly to the first row .

[0037] In an embodiment the optoelectronic component comprises four rows of light emitting diodes and third electrodes and fourth electrodes arranged at the mount surface of the carrier . Each third electrode is connected to a second contact pad of a light emitting diode of the third row by a bonding wire , respectively . Each fourth electrode is connected to a second contact pad of a light emitting diode of the fourth row by a bonding wire , respectively . Directly neighbouring light emitting diodes of each row of light emitting diodes are connected to each other such that the second contact pad of a light emitting diode is connected with a first contact pad of a subsequent light emitting diode by a bonding wire .

[0038] In an embodiment the third electrodes of the third row of light emitting diodes are arranged on a side of the third row of light emitting diodes averted from the fourth row of light emitting diodes . The fourth electrodes of the fourth row of light emitting diodes are arranged laterally next to the third electrodes on the side of the third row of light emitting diodes averted from the fourth row of light emitting diodes . The bonding wires connecting the fourth electrodes with the second contact pads of the light emitting diodes of the 2024PF00218 12 fourth row are arranged between the light emitting diodes of the third row and extending perpendicularly to the third row . Advantageously, bonding wires which are arranged between the LEDs of a row and extending perpendicularly with respect to the row increase a reflectivity of the optoelectronic component in the areas between the LEDs . As an example , the bonding wires can comprise gold .

[0039] In an embodiment an anti-reflective coating and / or a dichroic coating is arranged at a top surface of the wavelength converting element averted from the optoelectronic semiconductor chip . Advantageously, by providing the anti-reflective coating and / or the dichroic coating a luminance and / or a colour of electromagnetic radiation emitted by the at least one light emitting diode can be homogeneous over angle and spatially .

[0040] In an embodiment the optoelectronic component is designed as a headlight for an automobile , especially as an adaptive driving beam, a stage display, a street lighting or a shop lighting . Advantageously, the optoelectronic component is cheap, compact and comprises a high contrast . E . g . , the optoelectronic component can comprise a contrast ratio of 1 : 30 to 1 : 250 . However, the contrast ratio is not limited to the speci fied range . I f the light emitting diodes are provided with buried contacts , the optoelectronic component comprises very low pixel-to-pixel distances due to the tapering wavelength converting elements such that the LED-array be gapless or at nearly gapless .

[0041] The above-described properties , features and advantages of this invention and the way in which they are achieved will become clearer and more clearly understood in association with the following description of the exemplary embodiments which are explained in greater detail in association with the drawings . Here , in schematic illustration in each case : 2024PF00218 13

[0042] Fig. 1: main elements of an optoelectronic component according to a first embodiment in a cross-sectional side view;

[0043] Fig. 2: a detailed cross-section of an optoelectronic semiconductor chip of the optoelectronic component according to Fig. 1;

[0044] Fig. 3: an optoelectronic component according to a second in a top view;

[0045] Fig. 4: an optoelectronic component according to a third embodiment in a top view;

[0046] Fig. 5: an optoelectronic component according to a fourth embodiment in a top view;

[0047] Fig. 6: an optoelectronic component according to a fifth embodiment in a top view;

[0048] Fig. 7: an optoelectronic component according to a sixth embodiment in a top view;

[0049] Fig. 8: an optoelectronic component according to a seventh embodiment in a top view.

[0050] Fig. 1 schematically shows elements of an optoelectronic component 100 according to a first embodiment in a cross- sectional side view. The optoelectronic component 100 comprises a light emitting diode (LED) 101. The LED 101 comprises a substrate 102. The substrate 102 comprises a top side 103 and a bottom side 104 opposite the top side 103.

[0051] The substrate 102 exemplarily comprises a ceramic. The substrate 102 comprises aluminium oxide (AI2O3) , as an example, which can be present only at surfaces of the substrate 102 due to an oxidation of a substrate body comprising aluminium, i.e. at the top side 103, the bottom side 104 and side faces 2024PF00218 14 extending between the top side 103 and the bottom side 104 . Alternatively, the substrate 102 can be a monolithic ceramic . Instead of AI2O3, the substrate 102 can comprise any other ceramic such as aluminium nitride (AIN) or silicon nitride ( SiN) . Advantageously, a cheap ceramic substrate 102 can be used for the light emitting diode 101 .

[0052] In this exemplary embodiment , the substrate 102 comprises at least one electrical contact arranged at the top side 103 which is not shown in Fig . 1 for the sake i f simplicity . The contact comprises copper . The at least one contact arranged at the top side 103 of the substrate 102 can comprise any other electrically conductive material instead of copper . In the embodiment according to Fig . 1 , the substrate 102 can also be called a direct bonded copper ( DBG ) substrate 102 . In addition to the at least one contact or instead, the substrate 102 can comprise at least one through contact extending between the bottom side 104 and the top side 103 through the substrate 102 . A copper layer or any other electrically and / or thermally conductive layer can be arranged at the bottom side 104 of the substrate 102 . The copper layer can be attached to a heat sink for heat dissipation during an operation of the optoelectronic component 100 .

[0053] In another embodiment the substrate 102 comprises silicon or any other material , e . g . a semiconductor or a conductor . In this case , contacts on the top side 103 of the substrate 102 and / or through contacts extending through the substrate 102 can be omitted .

[0054] The optoelectronic component 100 comprises an optoelectronic semiconductor chip 105 . The optoelectronic semiconductor chip 105 comprises a mount face 106 and an emission face 107 opposite the mount face 106 . The optoelectronic semiconductor chip 105 is arranged with its mount face 106 at the top side 103 of the substrate 102 . The optoelectronic semiconductor chip 105 is designed to emit electromagnetic radiation at the emission face 107 . The optoelectronic semiconductor chip 105 2024PF00218 15 is preferably designed as a surface emitter . In an alternative embodiment the optoelectronic semiconductor chip 105 is designed as a volume emitter . In this case , the optoelectronic semiconductor chip 105 is designed to emit electromagnetic radiation at side facets extending between the mount face 106 and the emission face 107 , too .

[0055] Furthermore , the optoelectronic component 100 comprises a wavelength converting element 108 . The wavelength converting element 108 is arranged at the emission face 107 of the optoelectronic semiconductor chip 105 . An optical emission area of the light emitting diode 101 is defined by a top surface 109 of the wavelength converting element 108 . The top surface 109 of the wavelength converting element 108 is averted from the emission face 107 .

[0056] The wavelength converting element 108 is designed to absorb electromagnetic radiation emitted by the optoelectronic semiconductor chip 105 at the emission face 107 and to re-emit electromagnetic radiation . As absorbed and re-emitted electromagnetic radiation comprises di f ferent spectral ranges , in total electromagnetic radiation is emitted at the top surface 109 of the wavelength converting element 108 which comprises a combined spectral range . The wavelength converting element 108 exemplarily comprises a phosphor in a silicone . Alternatively, the wavelength converting element 108 can comprise a phosphor in another plastic, a phosphor in glass , a phosphor on glass , a phosphor in a plastic on glass or is designed as a phosphor-platelet , as explained previously .

[0057] The optoelectronic component 100 is based on the idea of a wavelength converting element 108 which is tapering towards the emission face 107 . The tapering geometry of the wavelength converting element increases the optical emission area, i . e . the area of the top surface 109 of the wavelength converting element 108 in contrast to a wavelength converting element 108 comprising a non-tapering geometry . In the latter case , the optical emission area is basically given by the ar- 2024PF00218 16 ea of the emission face 107 of the optoelectronic semiconductor chip 105 when the emission face 107 is covered by the wavelength converting element 108 completely and the wavelength converting element 108 is not protruding over the optoelectronic semiconductor chip 105 in a direction parallel to the emission face 107 .

[0058] In contrast , the wavelength converting element 108 of the optoelectronic component 100 of Fig . 1 is tapering towards the emission face 107 . In other words , the wavelength converting element 108 comprises a cross-section parallel to a plane perpendicular to the emission face 108 and the top side 103 which is tapering towards the emission face 107 and the top side 103 . The wavelength converting element 108 protrudes over the optoelectronic semiconductor chip 105 in a direction parallel to the top side 103 of the substrate 102 . In another embodiment , the wavelength converting element 108 may cover the emission face 107 partially . In any case , the wavelength converting element 108 proj ects over the side facets of the optoelectronic semiconductor chip 105 due to its tapering geometry . The wavelength converting element 108 can comprise a taper angle of 85 ° to 30 ° measured with respect to the top side 103 of the substrate 102 or the emission face 107 of the optoelectronic semiconductor chip 105 , as an example .

[0059] The wavelength converting element 108 can protrude over the substrate 102 in a direction parallel to the top side 103 of the substrate 102 as indicated on the right side of Fig . 1 . In this case , the optical emission area is increased even more . Parallel to the top side 103 and the emission face 107 , the wavelength converting element 108 can comprise any crosssection, e . g . , a rectangular cross-section .

[0060] As the wavelength converting element 108 protrudes over the optoelectronic semiconductor chip 105 laterally, the wavelength converting element 108 comprises an overhanging part 110 which is arranged laterally next to the optoelectronic semiconductor chip 105 and above the top side 103 of the sub- 2024PF00218 17 strate 102 . The overhanging part 110 can also be called protruding part 110 . In other words , at the top side 103 of the substrate 102 a free area 111 , which is uncovered by the optoelectronic semiconductor chip 105 and the wavelength converting element 108 , is reali zed . The free area 111 is arranged in the area of the overhanging part 110 , i . e . under the overhanging part 110 . This free area 111 allows to arrange a bond pad 112 at the top side 103 of the substrate 102 laterally next to the optoelectronic semiconductor chip 105 and under the overhanging part 110 . The bond pad 112 can be used to contact the optoelectronic semiconductor chip 105 by means of a bonding wire 113 . Thus , apart from an increased optical area of the LED 101 and the increased converting efficiency of the wavelength converting element 108 , the electrical wiring of the optoelectronic component 100 / the LED 101 can be arranged in the region under the overhanging part 110 of the wavelength converting element 108 at least partially . This allows to provide a compact optoelectronic component 100 .

[0061] Fig . 2 schematically shows a cross-section of the optoelectronic component 100 according to Fig . 1 , wherein the optoelectronic semiconductor chip 105 and means for an electrical connection of the optoelectronic semiconductor chip 105 are shown in more detail . The reference numerals are maintained in the following description .

[0062] The optoelectronic semiconductor chip 105 comprises a first layer sequence 114 , an active zone 115 and a second layer sequence 116 . The first layer sequence 114 is arranged in the region of the mount face 106 and faces the top side 103 of the substrate 102 . The second layer sequence 116 is arranged in the region of the emission face 107 and is averted from the top side 103 of the substrate 102 . The active zone 115 is arranged between the first layer sequence 114 and the second layer sequence 116 . When the optoelectronic semiconductor chip 105 is in operation, electromagnetic radiation is generated by a recombination of charge carriers in the active zone 2024PF00218 18

[0063] 115 . The layered structure of the optoelectronic semiconductor chip 105 and its materials shall not be described in further detail in the context of the present invention as it represents a well-established technology .

[0064] To electrically connect the optoelectronic semiconductor chip 105 , it is suggested to use the principle of buried contacts . By doing this , the optoelectronic semiconductor chip 105 can be connected by only one bonding wire 113 . However, the optoelectronic semiconductor chip 105 can also be connected di fferently . Nevertheless , the combination of a tapering wavelength converting element 108 and buried contacts is especially advantageous for producing cheap and compact optoelectronic components 100 with an increased optical emission area .

[0065] In the embodiment of Fig . 2 the light emitting diode 101 comprises a top contact layer 117 , a bottom contact layer 118 and at least one buried contact 119 . The top contact layer 117 is arranged on the top side 103 of the substrate 102 . The bottom contact layer 118 is arranged above the top contact layer 117 with respect to the top side 103 of the substrate 102 and isolated electrically from the top contact layer 117 by an insulation 120 arranged between the top contact layer 117 and the bottom contact layer 118 .

[0066] The optoelectronic semiconductor chip 105 is arranged with its mount face 106 on the bottom contact layer 118 , whereby the first layer sequence 114 is connected electrically to the bottom contact layer 118 . The buried contacts 119 are electrically connected to the top contact layer 117 and extend from the top contact layer 117 in a direction perpendicular to the top side 103 of the substrate 102 through the bottom contact layer 118 , the first layer sequence 114 and the active zone 115 and electrically connect the second layer sequence 116 with the top contact layer 117 , while the buried contacts 119 are isolated from the bottom contact layer 118 , the first layer sequence 114 and the active zone 115 electri- 2024PF00218 19 cally by the insulation 120 . As an example , the optoelectronic semiconductor chip 105 comprises four buried contacts 119 in total but it can comprise any number i f buried contacts 119 .

[0067] The contact pad 112 is arranged on the bottom contact layer 118 next to the optoelectronic semiconductor chip 105 , e . g . in a distance of 25pm . The contact pad 112 is connectable electrically by the bonding wire 113 . The contact pad 112 doesn' t have to be arranged and connected according to Fig . 2 . However, the optoelectronic component 100 comprises at least one contact pad 112 in order to connect the first or the second layer sequence 114 , 116 electrically . The bonding wire 113 can be omitted . It is also conceivably that the contact pad 112 may also be omitted .

[0068] Fig . 3 schematically shows an optoelectronic component 200 according to a second embodiment in a top view . The optoelectronic component 200 according to the second embodiment comprises the elements of the optoelectronic component 100 according to the first embodiment and additional elements . Only the additional elements are described in the following description, wherein the reference numerals are maintained for identical or similar elements .

[0069] The LED 101 is arranged on a carrier . The carrier can be designed as a printed circuit board ( FOB ) , for example . The carrier is not shown in Fig . 3 . The top view of Fig . 3 is a view on a mount surface of the carrier . The carrier comprises an electrode 121 and a further electrode 122 arranged at its mount surface . The light emitting diode 101 is arranged on the electrode 121 , i . e . above the electrode 121 with respect to the mount surface of the carrier and covers the electrode 121 partially . The LED 101 is arranged at the carrier such that the bottom side 104 of the substrate 102 is facing the mount surface of the carrier . 2024PF00218 20

[0070] The electrode 121 furthermore comprises a connection area 123 which can be used to electrically contact the LED 101 . The connection area 123 is not covered by the LED 10 . The connection area 123 is connected to the part of the electrode 121 which is covered by the LED 101 . The electrode can be connected with the top contact layer 117 . Thus , the second layer sequence 116 can be electrically contacted by the at least one buried contact 119 . The at least one buried contact 119 is contacted by arranging the substrate 102 with its bottom side 104 on the electrode 121 , whereby the top contact layer 117 can be contacted by through contacts extending from the top side 103 to the bottom side 104 of the substrate 102 , as an example . Alternatively, the substrate 102 can be electrically conductive , thus providing a connection between the electrode 121 and the top contact layer 117 which is connected to the second layer sequence 116 via the at least one buried contact 119 . Apart from that , the LED 101 is contacted electrically with the further electrode 122 by the bonding wire 113 , whereby the first layer sequence 114 is contacted electrically via the contact pad 112 and the bottom contact layer 118 to operate the LED 101 .

[0071] Generally, the electrode 121 and the further electrode 122 can comprise any shape . As an example , the connection area 123 of the electrode 121 is formed as a conductive track extending towards the area of the electrode 121 which is covered by the LED 101 . Also , the further electrode 122 is formed as a conductive track, as an example .

[0072] Fig . 4 schematically shows an optoelectronic component 300 according to a third embodiment in a top view . The optoelectronic component 300 according to the third embodiment comprises similarities to the optoelectronic component 200 according to the second embodiment . Only di f ferences of the optoelectronic component 300 according to the third embodiment will be described with respect to the optoelectronic component 200 according to the second embodiment . The reference 2024PF00218 21 numerals are maintained in the following description for identical or similar elements .

[0073] The optoelectronic component 300 according to the third embodiment comprises a plurality of light emitting diodes 101 arranged laterally next to each other at the mount surface of the carrier . Exemplarily, the optoelectronic component 300 comprises two LEDs 101 . However, it can comprise any number of LEDs 101 . The LEDs 101 are designed similarly to the LEDs 101 of the optoelectronic components 100 , 200 according to the first and second embodiment . The LEDs 101 are arranged in a row and connected in series . In other embodiments the LEDs 101 can also be arranged in another pattern . Also , a connection in series is only optional .

[0074] A plurality of electrodes 121 is arranged at the mount surface of the carrier . Each light emitting diode 101 is arranged at an electrode 121 according to Fig . 2 , respectively . Each electrode 121 comprises a connection area 123 which is not covered by a light emitting diode 101 , respectively . Directly neighbouring light emitting diodes 101 of the row of light emitting diodes 101 are connected to each other such that a contact pad 112 of a light emitting diode 101 is connected with a connection area 123 of an electrode 121 of a subsequent light emitting diode 101 by a bonding wire 113 . The last LED 101 in the series of LEDs 101 is connected to the further electrode 122 by a bonding wire 113 .

[0075] Fig . 5 schematically shows an optoelectronic component 400 according to a fourth embodiment in a top view . The optoelectronic component 400 according to the fourth embodiment comprises similarities to the optoelectronic component 300 according to the third embodiment . Only di f ferences of the optoelectronic component 400 according to the fourth embodiment will be described with respect to the optoelectronic component 300 according to the third embodiment . The reference numerals are maintained in the following description for identical or similar elements . The wavelength converting elements 2024PF00218 22

[0076] 108 are not shown in Fig . 5 for the sake of simplicity and clarity .

[0077] The optoelectronic component 400 according to the fourth embodiment comprises two rows 124 , 125 of light emitting diodes 101 arranged at the mount surface of the carrier . Exemplarily, each row 124 , 125 comprises to LEDs 101 . All light emitting diodes 101 are connected in series with each other, as an example . The further electrode 122 connects the two rows

[0078] 124 , 125 with each other via bonding wires 113 .

[0079] The first row 124 comprises first electrodes 126 with first connection areas 127 . The first connection areas 127 are quadratically formed in contrast to the connection areas 123 of Fig . 4 which are designed as conductive tracks . The second row 125 comprises second electrodes 128 with second connection areas 129 . The second connection areas 129 are designed as conductive tracks partially and also comprise a quadratic part connected to the conductive track . The first connection areas 127 of the first electrodes 126 are arranged on a side of the first row 124 which is averted from the second row

[0080] 125 . The second connection areas 129 of the second electrodes 128 are formed as conductive tracks and extend towards the first connection areas 127 such that the quadratic part of the second connection area 129 is arranged in a close proximity of the first connection area 127 . In other embodiments the first and second connection areas 127 , 129 can comprise any other shape and / or arrangement than shown in Fig . 5 . However, this arrangement of first and second electrodes 126 , 127 is advantageous when producing a compact optoelectronic component since all connection areas 127 , 129 protrude in the same direction .

[0081] Fig . 6 schematically shows an optoelectronic component 500 according to a fi fth embodiment in a top view . The optoelectronic component 500 according to the fi fth embodiment comprises similarities to the optoelectronic component 400 according to the fourth embodiment . Only di f ferences of the op- 2024PF00218 23 toelectronic component 500 according to the fi fth embodiment will be described with respect to the optoelectronic component 400 according to the fourth embodiment . The reference numerals are maintained in the following description for identical or similar elements . Some of the wavelength converting elements 108 are not shown in Fig . 6 for the sake of simplicity and clarity .

[0082] The optoelectronic component 500 of Fig . 6 comprises four rows 124 , 125 , 130 , 131 of light emitting diodes 101 . The first and second row 124 , 125 are formed as described with reference to Fig . 5 . Third connection areas 133 of third electrodes 132 of a third row 130 are arranged on a side of the third row 130 averted from a fourth row 131 . Fourth connection areas 135 of fourth electrodes 134 of the fourth row 131 are formed as conductive tracks partially which extend towards the third connection areas 133 . The third connection areas 133 are also formed quadratically, as an example , while the fourth connection areas 135 are formed as conductive tracks partially and also comprise a quadratic part arranged in a close proximity of the third connection areas 133 . The first and second connection areas 127 , 129 are arranged opposite the third and fourth connection areas 133 , 135 .

[0083] The light emitting diodes 101 of the first and second row 124 , 125 of the optoelectronic component 500 of Fig 6 can be connected in series with each other, while the LEDs 101 of the third and fourth row 130 , 131 can also connected in series separately, as an example . However, the LEDs 101 of the optoelectronic component 500 can also be connected di f ferently .

[0084] Fig . 7 schematically shows an optoelectronic component 600 according to a sixth embodiment in a top view . The optoelectronic component 600 according to the sixth embodiment comprises similarities to the optoelectronic component 400 according to the fourth embodiment . Only di f ferences of the optoelectronic component 600 according to the fi fth embodiment 2024PF00218 24 will be described with respect to the optoelectronic component 400 according to the fourth embodiment . The reference numerals are maintained in the following description for identical or similar elements . The wavelength converting elements 108 are not shown in Fig . 7 for the sake of simplicity and clarity .

[0085] In contrast to the optoelectronic component 400 according to the fourth embodiment , the optoelectronic component 600 according to the sixth embodiment comprises LEDs 10 which are not arranged on the first and second electrodes 126 , 128 . Rather than that , the light emitting diodes 101 of the first row 124 are arranged laterally next to the first electrodes 126 at the mount surface of the carrier, respectively . Each light emitting diode 101 comprises a first contact pad 136 and a second contact pad 137 . Each first electrode 126 is connected to a first contact pad 136 by bonding wire 113 . Directly neighbouring light emitting diodes 101 of the first row 124 are connected to each other such that the second contact pad 137 of a light emitting diode 101 is connected with a first contact pad 136 of a subsequent light emitting diode 101 by a bonding wire 113 .

[0086] In the exemplary embodiment two rows 124 , 125 of light emitting diodes 101 second electrodes 128 are arranged at the mount surface of the carrier . Each second electrode 128 is connected to a second contact pad 137 of a light emitting diode 101 of the second row 125 by a bonding wire 113 , respectively . Directly neighbouring light emitting diodes 101 of each row 124 , 125 are connected to each other such that the second contact pad 137 of a light emitting diode 101 is connected with a first contact pad 136 of a subsequent light emitting diode 101 by a bonding wire 113 .

[0087] In another embodiment the first electrodes 126 are connected to the second contact pads 137 and the second electrodes 128 are connected to the first contact pads 136 . The first contact pads 136 can be designed as cathode pads while the sec 2024PF00218 25 ond contact pads 137 can be designed as anode pads , as an example . However, it is also possible that the first contact pads 136 are designed anode pads while the second contact pads 137 are designed as cathode pads .

[0088] The first and second contact pads 136 , 137 can for example be arranged at the top contact layer 117 and the bottom contact layer 118 , respectively, or vice versa, and electrically connected to the top and bottom contact layer 117 , 118 , i f using the embodiment with buried contacts 119 according to Fig . 2 . However, the first and second contact pads 136 , 137 can be also reali zed by using another electrical connection of the optoelectronic semiconductor chip 105 which di f fers from the connection according to Fig . 2 .

[0089] The configuration of LEDs according to Fig . 7 can be called a daisy chain configuration . In this case , it is possible to control individual LEDs 101 by short-circuiting certain first and / or second electrodes 126 , 128 . For example , i f the first electrode 126 which is connected to the first contact pad 136 of a first optoelectronic semiconductor chip 1A of the first row 124 is short-circuited with the first electrode 126 which is connected to the first contact pad 136 of a second optoelectronic semiconductor chip 2A of the first row 124 , the first optoelectronic semiconductor chip 1A can be switched of f .

[0090] Similarly to the embodiment of Fig . 5 the first electrodes 126 of the first row 124 are arranged on a side of the first row 124 averted from the second row 125 . The second electrodes 128 of the second row 125 are arranged laterally next to the first electrodes 126 on the side of the first row 124 averted from the second row 125 . The bonding wires 113 connecting the second electrodes 128 with the second contact pads 137 of the light emitting diodes 101 of the second row 125 are arranged between the light emitting diodes 101 of the first row 124 and extending perpendicularly to the first row 2024PF00218 26

[0091] 124 . This can increase a reflectivity of the optoelectronic component 600 when using highly reflective bonding wires 113 .

[0092] Fig . 8 schematically shows an optoelectronic component 700 according to a seventh embodiment in a top view . The optoelectronic component 700 according to the seventh embodiment comprises similarities to the optoelectronic component 600 according to the sixth embodiment . The reference numerals are maintained in the following description for identical or similar elements . The wavelength converting elements 108 are not shown in Fig . 8 for the sake of simplicity and clarity .

[0093] The optoelectronic component 700 according to the seventh embodiment comprises four rows 124 , 125 , 130 , 131 of light emitting diodes 101 and third and fourth electrodes 133 , 134 arranged at the mount surface of the carrier laterally next to the LEDs 101 . Each third electrode 132 is connected to a second contact pad 137 of a light emitting diode 101 of the third row 130 by a bonding wire 113 , respectively . Each fourth electrode 134 is connected to a second contact pad 137 of a light emitting diode 101 of the fourth row 131 by a bonding wire 113 , respectively . Directly neighbouring light emitting diodes 101 of each row 124 , 125 , 130 , 131 of light emitting diodes 101 are connected to each other such that the second contact pad 137 of a light emitting diode 101 is connected with a first contact pad 136 of a subsequent light emitting diode 101 by a bonding wire 113 .

[0094] Again, it is possible to control individual LEDs 101 by short-circuiting certain first and / or second electrodes 126 , 128 and / or third and / or fourth electrodes 132 , 134 . For example , i f the third electrode 132 which is connected to the second contact pad 137 of a first optoelectronic semiconductor chip ID of the third row 130 is short-circuited with the third electrode 132 which is connected to the first contact pad 136 of a second optoelectronic semiconductor chip 2D of the third row 130 , the second optoelectronic semiconductor chip 2D can be switched of f because in this case both contact 2024PF00218 27 pads 136 , 137 of the second optoelectronic semiconductor chip 2A are short-circuited .

[0095] In another embodiment the third electrodes 126 are connected to the first contact pads 137 and the fourth electrodes 128 are connected to the first contact pads 137 . Again, first and second contact pads 136 , 137 can be designed as cathode and anode pads or vice versa .

[0096] Similarly to the arrangement of Fig . 6 , the third electrodes 132 of the third row 130 are arranged on a side of the third row 130 averted from the fourth row 131 . The fourth electrodes 134 of the fourth row 131 are arranged laterally next to the third electrodes 132 on the side of the third row 130 averted from the fourth row 131 . The bonding wires 113 connecting the fourth electrodes 128 with the second contact pads 137 of the light emitting diodes 101 of the fourth row 131 are arranged between the light emitting diodes 101 of the third row 130 and extending perpendicularly to the third row 130 thus increasing a reflectivity of the optoelectronic component 700 .

[0097] The invention has been illustrated and described in detail with the aid of the preferred exemplary embodiments . Nevertheless , the invention is not restricted to the examples disclosed . Rather, other variants may be derived therefrom by a person skilled in the art without departing from the protective scope of the invention .

[0098] 2024PF00218 28

[0099] REFERENCE SYMBOLS

[0100] 100 optoelectronic component according to the first embodiment

[0101] 200 optoelectronic component according to the second embodiment

[0102] 300 optoelectronic component according to the third embodiment

[0103] 400 optoelectronic component according to the fourth embodiment

[0104] 500 optoelectronic component according to the fi fth embodiment

[0105] 600 optoelectronic component according to the sixth embodiment

[0106] 700 optoelectronic component according to the seventh embodiment

[0107] 101 light emitting diode ( LED)

[0108] 102 substrate

[0109] 103 top side of the substrate

[0110] 104 bottom side of the substrate

[0111] 105 optoelectronic semiconductor chip

[0112] 106 mount face of the optoelectronic semiconductor chip

[0113] 107 emission face of the optoelectronic semiconductor chip

[0114] 108 wavelength converting element

[0115] 109 top surface of the wavelength converting element / optical emission area of the light emitting diode chip

[0116] 110 overhanging part of the wavelength converting element

[0117] 111 free area at the top side of the substrate under the overhanging part of the wavelength converting element

[0118] 112 contact pad

[0119] 113 bonding wire

[0120] 114 first layer sequence of the optoelectronic semiconductor chip

[0121] 115 active zone of the optoelectronic semiconductor chip

[0122] 116 second layer sequence of the optoelectronic semiconductor chip

[0123] 117 top contact layer 2024PF00218 29

[0124] 118 bottom contact layer

[0125] 119 buried contact

[0126] 120 insulation

[0127] 121 electrode

[0128] 122 further electrode

[0129] 123 connection area of the first electrode

[0130] 124 first row of LEDs

[0131] 125 second row of LEDs

[0132] 126 first electrode

[0133] 127 first connection area of first electrode

[0134] 128 second electrode

[0135] 129 second connection area of a second electrode

[0136] 130 third row of LEDs

[0137] 131 fourth row of LEDs

[0138] 132 third electrode

[0139] 133 third connection area

[0140] 134 fourth electrode

[0141] 135 fourth connection area

[0142] 136 first contact pad

[0143] 137 second contact pad

Claims

2024PF00218 30CLAIMS1. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) comprising at least one light emitting diode (101) , wherein the light emitting diode (101) comprises a substrate (102) , an optoelectronic semiconductor chip (105) and a wavelength converting element (108) , wherein the substrate (102) comprises a top side (103) and a bottom side (104) opposite the top side (103) , wherein the optoelectronic semiconductor chip (105) is arranged with its mount face (106) at the top side (103) of the substrate (102) and designed to emit electromagnetic radiation at an emission face (107) opposite the mount face (106) , wherein the wavelength converting element (108) is arranged at the emission face (107) of the optoelectronic semiconductor chip (105) and tapering towards the emission face (107) , wherein the wavelength converting element (108) protrudes over the optoelectronic semiconductor chip (105) in a direction parallel to the top side (103) of the substrate (102) .

2. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) according to claim 1, wherein the wavelength converting element (108) protrudes over the substrate (102) in a direction parallel to the top side (103) of the substrate (102) .

3. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein the wavelength converting element (108) comprises a taper angle of 85° to 30° measured with respect to the top side (103) of the substrate (102) .

4. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein the wavelength converting element (108) comprises a phosphor in a plastic, a phosphor in glass, a phosphor on2024PF00218 31 glass, a phosphor in a plastic on glass or is designed as a phosphor-platelet .

5. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein the optoelectronic semiconductor chip (105) comprises a first layer sequence (114) arranged in the region of the mount face (106) , a second layer sequence (116) arranged in the region of the emission face (107) and an active zone (115) arranged between the first layer sequence (114) and the second layer sequence (116) , wherein the light emitting diode comprises a top contact layer (117) , a bottom contact layer (118) and at least one buried contact (119) , wherein the top contact layer (117) is arranged on the top side (103) of the substrate (102) , wherein the bottom contact layer (118) is arranged above the top contact layer (117) with respect to the top side (103) of the substrate (102) and isolated electrically from the top contact layer (117) , wherein the optoelectronic semiconductor chip (105) is arranged with its mount face (106) on the bottom contact layer (118) , whereby the first layer sequence (114) is connected electrically to the bottom contact layer (118) , wherein the buried contact (119) is electrically connected to the top contact layer (117) and extends from the top contact layer (117) in a direction perpendicular to the top side (103) of the substrate (102) through the bottom contact layer (118) , the first layer sequence (114) and the active zone (115) to the second layer sequence (116) and electrically connects the second layer sequence (116) with the top contact layer (117) , while the buried contact (119) is isolated from the bottom contact layer (118) , the first layer sequence (114) and the active zone (115) electrically, wherein a contact pad (112) is arranged on the bottom contact layer (118) next to the optoelectronic semiconductor chip (105) ,2024PF00218 32 wherein the bottom contact layer (118) and the contact pad (112) are connected to each other electrically, wherein the contact pad (112) is connectable electrically by a bonding wire (113) .

6. Optoelectronic component (300, 400, 500, 600, 700) according to one of the preceding claims, comprising a plurality of light emitting diodes (101) arranged laterally next to each other at a mount surface of a carrier in a first row (124) , wherein each light emitting diode (101) comprises a substrate (102) , an optoelectronic semiconductor chip (105) and a wavelength converting element (108) , wherein the substrates (102) each comprise a top side (103) and a bottom side (104) opposite the top side (103) , wherein the substrates (102) of the light emitting diodes(101) are arranged with their bottom sides (104) at the mount surface of the carrier, wherein the optoelectronic semiconductor chips (105) are arranged with their mount faces (106) at the top sides (103) of the substrates (102) and designed to emit electromagnetic radiation at emission faces (107) opposite the mount faces(106) , respectively, wherein the wavelength converting elements (108) are arranged at the emission faces (107) of the optoelectronic semiconductor chips (105) and tapering towards the emission faces(107) , respectively, wherein the wavelength converting elements (108) protrude over the optoelectronic semiconductor chips (105) in a direction parallel to the top sides (103) of the substrates (102) , respectively .

7. Optoelectronic component (300, 400, 500, 600, 700) according to claim 6, wherein the wavelength converting elements (108) of directly neighbouring light emitting diodes (101) comprise a minimum lateral distance parallel to the top side (103) of the substrate (102) of 25pm or less.2024PF00218 338. Optoelectronic component (400, 500, 600, 700) according to one of the claims 6 to 8, wherein the light emitting diodes (100) are arranged laterally next to each other at the mount surface of the carrier in two or four rows (124, 125, 130, 131) .

9. Optoelectronic component (400, 500, 600, 700) according to claim 8, wherein all light emitting diodes (101) are connected in series with each other or wherein the light emitting diodes (101) of each row (124, 125, 130, 131) are connected in series with each other, respectively.

10. Optoelectronic component (300, 400, 500) according to one of the claims 6 to 9, wherein first electrodes (126) are arranged at the mount surface of the carrier, wherein each light emitting diode (101) of the first row (124) of light emitting diodes (101) is arranged on a first electrode (126) , respectively, wherein each first electrode (126) comprises a first connection area (127) which is not covered by a light emitting diode (101) , respectively, wherein directly neighbouring light emitting diodes (101) of the first row (124) of light emitting diodes (10) are connected to each other such that a contact pad (112) of a light emitting diode (101) is connected with a first connection area (127) of a first electrode (126) of a subsequent light emitting diode (101) by a bonding wire (113) .

11. Optoelectronic component (400) according to claim 10, comprising two rows (124, 125) of light emitting diodes (101) and second electrodes (128) arranged at the mount surface of the carrier, wherein each light emitting diode (101) of a second row (125) of light emitting diodes (101) is arranged on a second electrode (128) , respectively,2024PF00218 34 wherein each second electrode (128) comprises a second connection area (129) which is not covered by a light emitting diode (101) , respectively, wherein directly neighbouring light emitting diodes (101) of the second row (125) of light emitting diodes (101) are connected to each other such that a contact pad (112) of a light emitting diode (101) is connected with a second connection area (127) of a second electrode (128) of a subsequent light emitting diode (101) by a bonding wire (113) , wherein the first connection areas (127) of the first electrodes (126) of the first row (124) of light emitting diodes (101) are arranged on a side of the first row (124) of light emitting diodes (101) averted from the second row (125) of light emitting diodes (101) , wherein second connection areas (129) of second electrodes (128) of the second row (125) of light emitting diodes (101) are formed as conductive tracks extending towards the first connection areas (127) .

12. Optoelectronic component (500) according to claim 11, comprising four rows (124, 125, 130, 131) of light emitting diodes (101) and third and fourth electrodes (132, 134) arranged at the mount surface of the carrier, wherein third connection areas (133) of the third electrodes (132) of a third row (130) of light emitting diodes (101) are arranged on a side of the third row (130) of light emitting diodes (101) averted from a fourth row (131) of light emitting diodes (101) , wherein fourth connection areas (135) of fourth electrodes (134) of the fourth row (131) of light emitting diodes (101) are formed as conductive tracks extending towards the third connection areas (133) , wherein the first and second connection areas (127, 129) are arranged opposite the third and fourth connection areas (133, 135) .

13. Optoelectronic component (600, 700) according to one of the claims 6 to 9,2024PF00218 35 wherein first electrodes (126) are arranged at the mount surface of the carrier, wherein each light emitting diode (101) of the first row (124) of light emitting diodes (101) is arranged laterally next to a first electrode (126) at the mount surface of the carrier, respectively, wherein each light emitting diode (101) comprises a first contact pad (136) and a second contact pad (137) , wherein each first electrode (126) is connected to a first contact pad (136) by bonding wire (113) , wherein directly neighbouring light emitting diodes (101) of the first row (124) of light emitting diodes (101) are connected to each other such that the second contact pad (137) of a light emitting diode (101) is connected with a first contact pad (136) of a subsequent light emitting diode (101) by a bonding wire (113) .

14. Optoelectronic component (600) according to claim 13, comprising two rows (124, 125) of light emitting diodes (101) and second electrodes (128) arranged at the mount surface of the carrier, wherein each first electrode (126) is connected to a first contact pad (136) of a light emitting diode (101) of the first row (124) by a bonding wire (113) , respectively, wherein each second electrode (128) is connected to a second contact pad (137) of a light emitting diode (101) of the second row (125) by a bonding wire (113) , respectively, wherein directly neighbouring light emitting diodes (101) of each row (124, 125) of light emitting diodes (101) are connected to each other such that the second contact pad (137) of a light emitting diode (101) is connected with a first contact pad (136) of a subsequent light emitting diode (101) by a bonding wire (113) .

15. Optoelectronic component (600) according to claim 14, wherein the first electrodes (126) of the first row (124) of light emitting diodes (101) are arranged on a side of the2024PF00218 36 first row (124) of light emitting diodes (101) averted from the second row (125) of light emitting diodes (101) , wherein the second electrodes (128) of the second row (125) of light emitting diodes (101) are arranged laterally next to the first electrodes (126) on the side of the first row (124) of light emitting diodes (101) averted from the second row (125) of light emitting diodes (101) , wherein the bonding wires (113) connecting the second electrodes (128) with the second contact pads (137) of the light emitting diodes (101) of the second row (125) are arranged between the light emitting diodes (101) of the first row(124) and extending perpendicularly to the first row (124) .

16. Optoelectronic component (700) according to claim 15, comprising four rows (124, 125, 130, 131) of light emitting diodes (101) and third electrodes (132) and fourth electrodes (134) arranged at the mount surface of the carrier, wherein each third electrode (132) is connected to a second contact pad (137) of a light emitting diode (101) of the third row (130) by a bonding wire (113) , respectively, wherein each fourth electrode (134) is connected to a second contact pad (137) of a light emitting diode (101) of the fourth row (131) by a bonding wire (113) , respectively, wherein directly neighbouring light emitting diodes (101) of each row (124, 125, 130, 131) of light emitting diodes (101) are connected to each other such that the second contact pad (137) of a light emitting diode (101) is connected with a first contact pad (136) of a subsequent light emitting diode (101) by a bonding wire (113) .

17. Optoelectronic component (700) according to claim 16, wherein the third electrodes (132) of the third row (130) of light emitting diodes (101) are arranged on a side of the third row (130) of light emitting diodes (101) averted from the fourth row (131) of light emitting diodes (101) , wherein the fourth electrodes (134) of the fourth row (131) of light emitting diodes (101) are arranged laterally next to the third electrodes (132) on the side of the third row (130)2024PF00218 37 of light emitting diodes (101) averted from the fourth row (131) of light emitting diodes (101) , wherein the bonding wires (113) connecting the fourth electrodes (128) with the second contact pads (137) of the light emitting diodes (101) of the fourth row (131) are arranged between the light emitting diodes (101) of the third row(130) and extending perpendicularly to the third row (130) .

18. Optoelectronic component (100, 200, 300, 400, 500, 600, 700) according to one of the preceding claims, wherein an anti-reflective coating and / or a dichroic coating is arranged at a top surface (109) of the wavelength converting element (108) averted from the optoelectronic semiconductor chip (105) .

19. Optoelectronic component (100, 200, 300, 400, 500, 600 700) according to one of the preceding claims, wherein the optoelectronic component (100, 200, 300, 400, 500) is designed as a headlight for an automobile, especially as an adaptive driving beam, a stage display, a street lighting or a shop lighting.

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