Linear drive optical engine and transceiver

Abstract

A photonic integrated circuit (PIC) includes a splitter configured to divide an input light signal and first and second silicon-organic hybrid (SOH) modulators coupled to the splitter. Each of the first and second SOH modulators includes an organic electro-optic (OEO) material. An intensity modulation with direct detection (IMDD) transceiver includes such a PIC and an electronic integrated circuit (EIC) configured to drive the first and second SOH modulators. A coherent transceiver includes a splitter configured to divide an input laser into two outputs for a transmission path and a local oscillator path, a PIC on the transmission path including a first IQ modulator and a second IQ modulator. The first IQ modulator includes first and second SOH modulators, and the second IQ modulator includes third and fourth SOH modulators. Each of the first, second, third, and fourth SOH modulators includes an OEO material.

Description

PATENTAttorney Docket No.: 797AA0002PCLINEAR DRIVE OPTICAL ENGINE AND TRANSCEIVERCROSS REFERENCE TO RELATED APPLICATION

[0001] This application claims priority to U.S. Provisional Patent Application No. 63 / 682,057 filed on August, 12, 2024, entitled LINEAR DRIVE SILICON-ORGANIC HYBRID OPTICAL ENGINE, which is hereby incorporated by reference in its entirety.TECHNICAL FIELD

[0002] The present disclosure relates to electro-optic devices, and more specifically to liner drive optical (LDO) engines including a plurality of electro-optic modulators, and transceivers including such LDO engines. For example, the present disclosure relates to a photonic integrated circuit (PIC) including a plurality of silicon-organic hybrid (SOH) modulators and an optical transceiver including the PIC.BACKGROUND

[0003] Electro-optic devices modulate, manipulate, or control properties of light through an interaction between electrical and optical signals. For example, a transceiver includes a PIC incorporating a plurality of electro-optic (EO) modulators that each modulate the intensity, phase, polarization, and / or frequency of an optical signal in response to an electrical signal. However, conventional semiconductor junction-based silicon photonic EO modulators exhibit several limitations, such as relatively narrow bandwidths, relative high drive voltages, and relatively low modulation efficiencies.SUMMARY

[0004] In an embodiment, a photonic integrated circuit (PIC) includes a splitter configured to divide an input light signal and first and second silicon-organic hybrid (SOH) modulators coupled to the splitter. Each of the first and second SOH modulators including an organic electro-optic (OEO) material.

[0005] In an embodiment, an intensity modulation with direct detection (IMDD) transceiver includes a photonic integrated circuit (PIC) including first and second siliconorganic hybrid (SOH) modulators, and an electronic integrated circuit (EIC) configured toPATENTAttorney Docket No.: 797AA0002PC drive the first and second SOH modulators. Each of the first and second SOH modulators including an organic electro-optic (OEO) material.

[0006] In an embodiment, a coherent transceiver includes a splitter configured to divide an input laser into two outputs for a transmission path and a local oscillator path, and a photonic integrated circuit (PIC) on the transmission path including a first IQ modulator and a second IQ modulator. The first IQ modulator includes first and second silicon-organic hybrid (SOH) modulators, the second IQ modulator includes third and fourth SOH modulators, and each of the first, second, third, and fourth SOH modulators includes an organic electro-optic (OEO) material.BRIEF DESCRIPTION OF THE DRAWINGS

[0007] FIG. 1 illustrates an electro-optic device according to an embodiment of the present disclosure.

[0008] FIGS. 2A, 2B, and 2C illustrate configurations of transceivers according to embodiments of the present disclosure.

[0009] FIG. 3 illustrates a silicon-organic hybrid (SOH) modulator according to an embodiment of the present disclosure.

[0010] FIG. 4 illustrates a PIC employing a multi-channel IMDD (intensity modulation with direct detection) configuration according to an embodiment of the present disclosure.

[0011] FIG. 5 illustrates a coherent transmitter including a PIC according to an embodiment of the present disclosure.DETAILED DESCRIPTION

[0012] In the following description, certain illustrative embodiments have been illustrated and described. As those skilled in the art would realize, these embodiments may be modified in various different ways without departing from the scope of the present disclosure.Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive. Like reference numerals may designate like elements in the specification.

[0013] As used herein, including in the claims, “or” as used in a list of items (e.g., a list of items prefaced by a phrase such as “at least one of’ or “one or more of’ or “one or both of’)PATENTAttorney Docket No.: 797AA0002PC indicates an inclusive list such that, for example, a list of at least one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C).

[0014] FIG. 1 illustrates an electro-optic device 100 according to an embodiment of the present disclosure. The electro-optic device 100 in FIG. 1 is a transceiver and includes a transmitter 120 and a receiver 160.

[0015] In the embodiment of FIG. 1, the transmitter 120 functions as an optical module that encodes and modulates data carried by an incoming electrical signal onto an optical carrier. The transmitter 120 in FIG. 1 includes a light source (e.g., one or more lasers) 106, a photonic integrated circuit (PIC) 102 with one or more electro-optic modulators (e.g., SOH modulators) 104. and an electronic integrated circuit (EIC) 108 that drives the modulators 104.

[0016] In the embodiment of FIG. 1, the receiver 160 includes a photodetector (PD) 162 that converts an optical signal to an electrical signal (e.g., a photocurrent). The receiver 160 in FIG. 1 further includes an amplifier (e.g., a transimpedance amplifier) 164 that converts that the photocurrent to voltage (e.g., a photovoltage). In some embodiments, the receiver 160 may recover a signal from the photovoltage using intensity modulation with direct detection (IMDD).

[0017] In some embodiments, the PIC 102 in FIG. 1 may be utilized in a liner drive optic (LDO) engine. For example, such an LDO engine may omit a retimer / DSP circuitry, and include modulators driven directly by a Serializer / Deserializer (SerDes) circuitry in a switch or a client physical network interface (PHY), thereby improve power efficiency while ensuring sufficient data rates. When the PIC 102 is integrated with one or more linear drive electronics in the transceiver 100, a data transmission rate of the transceiver 100 may be equal to or greater than 200 Gb / s per channel. Some configurations of the transceiver 100 including an LDO engine will be described below in more detail with reference to FIGS. 2A- 2C.

[0018] FIGS. 2A, 2B, and 2C illustrate configurations of transceivers 200A, 200B, and 200C, according to embodiments of the present disclosure. Each of the transceivers 200 A. 200B, and 200C may be suitable for use as the transceiver 100 in FIG. 1.PATENTAttorney Docket No.: 797AA0002PC

[0019] The transceiver 200A in FIG. 2A is a linear pluggable optics (LPO) transceiver that includes first and second boards (e.g., PCB boards) 214A and 214B, first and second substrates 212A and 212B, a physical network interface (PHY) 210, and a PIC (e.g., silicon photonic PIC) 202. The silicon photonic PIC 202 includes relatively efficient modulators (e.g., an SOH modulator 304 in FIG. 3) to achieve acceptable extinction ratios on a transmit leg due to electrical losses between a SerDes circuitry (not shown) and the PIC 202, thereby addressing issues (e.g.. electrical losses increasing with signal bandwidth) of a conventional LPO transceiver.

[0020] The transceiver 200B in FIG. 2B is an on-board optics (OBO) or near-packaged optics (NPO) transceiver that includes a board (e.g., a PCB board) 214, first and second substrates 212A and 212B, a PHY 210, and a PIC (e.g., silicon photonic PIC) 202. Such an OBO or NPO transceiver 200B may further address electrical loss issues by placing the PIC 202 and drive electronics in the PHY 210 over a single circuit board 214 to reduce lengths of electrical interconnects.

[0021] The transceiver 200C in FIG. 2C is a co-packaged optics (CPO) transceiver that includes a board (e.g., a PCB board) 214, a substrate (or an interposer) 212, a PHY 210, and a PIC (e.g., silicon photonic PIC) 202. Such a CPO transceiver 200C may further reduce lengths of electrical interconnects and ensure high component density by placing the PIC 202 and drive electronics in the PHY 210 on a single substrate (or a single interposer) 212.

[0022] Referring back to FIG. 1, the PIC 102 in FIG. 1 includes one or more siliconorganic hybrid (SOH) modulators 104 with an organic electro-optic (OEO) material, thereby- ensuring compatibility with existing silicon photonics fabrication technology and obtaining desirable characteristics (e.g., reduced size and optical loss, increased modulation efficiency and bandwidth, etc.). An example of these SOH modulators 140 will be described below in more detail w ith reference to FIG. 3.

[0023] FIG. 3 illustrates an SOH modulator 304 according to an embodiment of the present disclosure. The SOH modulator 304 in FIG. 3 includes a substrate 321, first and second waveguide rails 324A and 324B, a slot 322. first and second slabs 326A and 326B. first and second electrodes 328A and 328B, and an OEO material 330. For example, the SOH modulator 304 in FIG. 3 functions as a phase shifter.PATENTAttorney Docket No.: 797AA0002PC

[0024] The substrate 321 in FIG. 3 may include an oxide material (e.g., silicon dioxide). The first and second waveguide rails (e.g., silicon rails) 324A and 324B in FIG. 3 define the slot 322 (or an OEO waveguide core) therebetween. For example, the first waveguide rail 324A is disposed on a first sidewall (e.g., a left sidewall in FIG. 3) of the OEO waveguide core 322, and the second waveguide rail 324B is disposed on a second sidewall (e.g., a right sidewall in FIG. 3) of the OEO waveguide core 322. The first slab 326A in FIG. 3 connects the first electrode 328A and the first rail 324A, and the second slab 326B in FIG. 3 connects the second electrode 328B and the second rail 324B.

[0025] The SOH modulator 304 in FIG. 3 may function as a Pockels effect modulator, which is fabricated using conventional silicon photonics techniques and includes the OEO material 330. In the embodiment of FIG. 3, the OEO material 330 fills the slot 322. In such an embodiment, the optical mode is substantially confined in a low-index region between the first and second silicon rails 324A and 324B.

[0026] In some embodiments, an OEO material (e.g., the OEO material 330 in FIG. 3) includes EO-active chromophores and is aligned (or poled) during fabrication of a modulator (e.g., the SOH modulator 304 in FIG. 3) to produce a net Pockels response. For example, the OEO material is activated by electric-field poling. Such a poling process may include application of DC voltages (e.g., voltages above device operating limits) during manufacture. In some embodiments, a plurality of modulators are poled to a similar level of performance without thermal or electrical damage by using external parallel poling circuitry to enable equivalent voltage delivery to the modulators, while avoiding electrical crosstalk and substantially preventing damage to photodiodes and other active components. In some embodiments, temporary or modifiable electrical circuit elements are used to pole the modulators in parallel. In particular, this process of parallel poling is beneficial to implement LDO and CPO configurations (e.g., the CPO transceiver in FIG. 2C) including SOH modulators (e.g., the SOH modulator 304 in FIG. 3), because a given PIC benefits from incorporating as many modulators as possible with similar performance characteristics to support these configurations. Such designs may also facilitate appropriate RF termination for modulators, which may be external (e.g. wire bonded) or be on-die.PATENTAttorney Docket No.: 797AA0002PC

[0027] In some embodiments, an OEO material (e.g., the OEO material 330 in FIG. 3) is intrinsically ordered due to intermolecular interactions. For example, covalent or non- covalent interactions may be used to orient the OEO material or assist with poling.

[0028] In some embodiments, an OEO material (e g., the OEO material 330 in FIG. 3) exhibits a Pockels response (e.g., electro-optic coefficient ns) of at least about 200 pm / V (e.g., 195 pm / V to 204 pm / V), or at least about 100 pm / V (e g., 95 to 104 pm / V) at an operating wavelength. For example, the Pockels response may be in a range from about 100 pm / V to about 400 pm / V. For example, the Pockels response may be about 250 pm / V (e.g., 245 to 255 pm / V), or about 300 pm / V (e.g., 295 to 304 pm / V). Such a relatively high Pockels response of the OEO material makes a phase shifter length of a modulator (e.g., the modulator 304 in FIG. 3) relatively short. In some embodiments, a phase shifter length of the modulator is not greater than about 1 mm (e.g., 0.95 to 1.04 mm). For example, a phase shifter length of the modulator may be about 0.9 mm (e.g., 0.85 to 0.94 mm), about 0.7 mm (e.g., 0.65 to 0.74 mm), or about 0.5 mm (e.g., 0.45 to 0.54 mm). In some embodiments, a phase shifter length of the modulator is not greater than about 0.5 mm, or about 0.25 mm. As a result, a size of each of modulators according to embodiments of the present disclosure may be significantly reduced compared to that of a conventional modulator. Such a relatively short phase shifter length of each of the modulators according to embodiments of the present disclosure reduces capacitance, thereby reducing optical propagation loss, improving modulation efficiencies, and increasing bandwidths, compared to those of conventional silicon photonics modulators. In some embodiments, phase shifter losses may be equal to or less than about 1 dB (e.g., 0.95 to 1.05 dB), modulation efficiencies may be equal to or less than about 1 V mm (e.g., 0.95 to 1.05 V mm), and bandwidths may be equal to or higher than about 65 GHz (e.g., 64.5 to 65.4 GHz). For example, phase shifter losses may be about 0.9 dB (e.g., 0.85 to 0.94 dB), or about 0.7 dB (e.g., 0.65 to 0.74 dB), or about 0.5 dB (e.g., 0.45 to 0.54 dB). For example, modulation efficiencies may be about 0.9 V mm (e.g., 0.85 to 0.94 V mm), be about 0.7 V mm (e.g., 0.65 to 0.74 V mm), or be about 0.5 V mm (e.g., 0.45 to 0.54 V mm). In some embodiments, modulation efficiencies may be equal to or less than about 0.5 V mm (e.g., 0.45 to 0.55 V mm), and bandwidths may be equal to or higher than about 80 GHz (e.g., 79.5 to 80.4 GHz), or about 110 GHz (e.g., 109.5 to 110.4 GHz).

[0029] In some embodiments, an OEO material (e.g., the OEO material 330 in FIG. 3) includes a crosslinkable OEO material. Such a crosslinkable OEO material may includePATENTAttorney Docket No.: 797AA0002PCHLD (a high-performing organic electro-optic material) or derivatives thereof. For example, HLD includes a first compound HLD1 (CAS# 2556943-69-0) and a second compound HLD2 (CAS# 2556941-54-7). In some embodiments, the OEO material has a glass transition temperature (Tg) of > 150°C.

[0030] In some embodiments, a PIC (e.g.. the PIC 102 in FIG. 1) includes one or more SOH modulators (e g., the SOH modulator in FIG. 3). For example, such a PIC may include two SOH modulators, four SOH modulators, eight SOH modulators, or sixteen SOH modulators. However, embodiments of the present disclosure are not limited thereto, and the PIC may include a given number of modulators sufficient to support a desired number of channels according to embodiments.

[0031] In some embodiments, a transceiver (e.g., the transceiver 100 in FIG. 1) includes one or more SOH modulators (e.g., the SOH modulator in FIG. 3) to reduce noise and improve a signal-to-noise ratio (SNR) in the modulators, thereby improving the energy efficiency compared to when multiple conventional modulators are used. These SOH modulators according to embodiments of the present disclosure may be utilized to further reduce crosstalk, which contributes to reduction of a required drive voltage and overall power consumption of the transceiver.

[0032] FIG. 4 illustrates a PIC 402 employing a multi-channel IMDD (intensity modulation with direct detection) configuration according to an embodiment of the present disclosure. The PIC 402 in FIG. 4 is included in a DR4 IMDD optical engine. In the embodiment of FIG. 4, the PIC 402 includes first, second, and third splitters 432A, 432B, and 432C, first, second, third, and fourth SOH modulators (e.g., Mach-Zehnder interferometers) 404A, 404B, 404C, and 404D. an input coupler 430, and first, second, third, and fourth output couplers 434A, 434B. 434C, and 434D. Although the PIC 402 in FIG. 4 employs the DR4 configuration, embodiments of the present disclosure are not limited thereto. In some embodiments, the PIC 402 may employ a DR8 configuration or a DR 16 configuration. For example, Table 1 below shows characteristics of a PIC employing a DR8 configuration with a driver impedance of about 100 (e.g., 95 to 104 Q) impedance and operating within the O- band in telecommunications.[Table 1]PATENTAttorney Docket No.: 797AA0002PC

[0033] Each of the first, second, and third splitters 432A, 432B, and 432C in FIG. 4 divides a received light signal. For example, the second splitter 432B is coupled between the first splitter 432A and the first and second SOH modulators 404A and 404B, and the third splitter 432C is coupled between the first splitter 432A and the third and fourth SOH modulators 404C and 404D. Each of the first, second, third, and fourth SOH modulators 404A, 404B. 404C, and 404D in FIG. 4 receives an electrical signal indicating data, encodes the data onto a light signal, and outputs the light signal to a respective one of the first, second, third, and fourth output couplers 434A, 434B, 434C, and 434D. Each of the first, second, third, and fourth SOH modulators in FIG. 4 includes an OEO material (e.g.. the OEO material 330 in FIG. 3).

[0034] In some embodiments, at least one of the first, second, third, or fourth SOH modulators 404A, 404B, 404C, and 404D includes a Mach-Zehnder modulator. In some embodiments, the first, second, third, and fourth SOH modulators 404A, 404B, 404C, and 404D include a racetrack resonator, or a racetrack resonator, or both.

[0035] In some embodiments, the PIC 402 is utilized for OOK or NRZ modulation. In some embodiments, the PIC 402 is utilized for PAM4, PAM6, PAM8, or other pulse amplitude modulation schemes. In some embodiments, operating in a single-ended drive configuration, a drive voltage (VPP) utilized for modulation is less than about 1 V (e.g., 0.95- 1.04 V) to obtain the bit error rate (BER) less than 3.8xl0'3. In some embodiments, operating in a differential drive configuration, a difference between positive and negative drive voltages utilized for modulation is less than about 2 V (e g., 1.95-2.04V) to obtain the bit error rate (BER) less than 3.8x1 O'3.PATENTAttorney Docket No.: 797AA0002PC

[0036] In some embodiments, the PIC 402 is utilized in coherent transmitter configurations, where a plurality of SOH modulators (e.g. Mach-Zehnder modulators) are arranged in a manner to implement one or more IQ modulators to enable higher order modulation schemes. An example of such a coherent transmitter will be described below in more detail with reference to FIG. 5.

[0037] FIG. 5 illustrates a coherent transmitter 500 including a PIC 520 according to an embodiment of the present disclosure. The PIC 520 in FIG. 5 includes first and second spotsize converter 511 and 509, a splitter (e.g., a TX / LO splitter) 513, first, second, third, and fourth SOH modulators (e.g., Mach-Zehnder modulators) 504A, 504B, 504C, and 504D, first and second phase shifters 503A and 503B, first and second monitor photodiodes 505A and 505B, and a polarization splitter & rotator 507.

[0038] The TX / LO splitter 513 in FIG. 5 divides an input laser LIN into two outputs for a transmission path and a local oscillator (LO) path of a receiver (not shown). The transmission path in FIG. 5 includes an X-pol arization path and a Y-polarization path. The X-polarization path includes a first IQ modulator implemented using the first and second Mach-Zehnder modulators 504A and 504B and a second IQ modulator implemented using the third and fourth Mach-Zehnder modulators 504C and 504D. Each of the first, second, third, and fourth Mach-Zehnder modulators 504A, 504B, 504C. and 504D in FIG. 5 includes a pair of SOH phase shifters (e.g., the SOH modulator 304 in FIG. 3).

[0039] A PIC according to embodiments of the present disclosure includes relatively efficient modulators (e.g., an SOH modulator 304 in FIG. 3) to achieve acceptable extinction ratios to achieve desirable characteristics (e.g., reduced size and optical loss, increased modulation efficiency and bandwidth, etc.). In some embodiments, a plurality of SOH modulators in a PIC according to embodiments of the present disclosure have an extinction ratio (e.g., static extinction ratio) equal to or greater than about 20 dB (e.g., 19.5 dB to 20.4 dB). For example, the extinction ratio may be equal to or greater than about 25 (e.g., 24.5 dB to 25.4 dB) or about 30 dB (e.g.. 29.5 dB to 30.4 dB). In some embodiments, phase shifter optical loss of each of modulators in a plurality of PICs, excluding coupling and splitting losses, is equal to or less than about 3 dB (e.g., 2.95 dB to 3.04 dB). For example, the phase shifter optical loss is less than about 2 dB or less than about 1 dB. In some embodiments, a 3PATENTAttorney Docket No.: 797AA0002PC dB EO (S21) bandwidth of modulators in a PIC is at least about 50 GHz (e.g., 49.5 GHz to 50.4 GHz), or at least about 80 GHz (e.g., 79.5 GHz to 80.4 GHz), or at least about 100 GHz.

[0040] A PIC according to embodiments of the present disclosure is included in an LPO module (e.g.. the LPO transceiver 200A in FIG. 2A, in a NPO or OBO module (e.g.. the NBO or OBO transceiver 200B in FIG. 2B), or a CPO module (e.g., the CPO transceiver 200C in FIG. 2C). In other embodiments, such a PIC is used for optical I / O or analog computing applications.

[0041] A PIC according to embodiments of the present disclosure operates within the O, E, S, C, or L telecommunications bands in a wavelength range of 1260-1630 nm.

[0042] A PIC according to embodiments of the present disclosure is capable of performing a long-term operation at relatively high temperatures. In some embodiments, such a PIC has a time to 80% performance (tso) after initial bum-in of > 1 year at 85°C. For example, the PIC has a tso after initial bum-in of > 1 year at 120°C. In some embodiments, the PIC is protected against water and oxygen by inorganic and / or organic encapsulation layers formed with deposition methods such as atomic layer deposition (ALD), physical vapor deposition (PVD), or molecular layer deposition (MLD). For example, these encapsulation layers may be deposited to cover an OEO material (e.g., the OEO material 330 in FIG. 3) to protect the OEO material from water and oxygen.

[0043] Al . An embodiment of the present disclosure includes a photonic integrated circuit (PIC), comprising: a plurality of silicon-organic hybrid (SOH) modulators, each including an organic electro optic (OEO) material.

[0044] A2. The PIC of Al, wherein the PIC includes at least four SOH modulators.

[0045] A3. The PIC of Al, wherein each of the modulators includes a pair of waveguides defining a slot therebetween, and the OEO material is provided within the slot.

[0046] A4. The PIC of Al, wherein the modulators include at least one Mach-Zehnder modulator.PATENTAttorney Docket No.: 797AA0002PC

[0047] A5. The PIC of Al, wherein the modulators include at least one ring resonator, or at least one racetrack resonator, or at least one ring resonator and at least one racetrack resonator.

[0048] A6. The PIC of Al, wherein a static extinction ratio of each of the modulators is greater than about 25 dB.

[0049] A7. The PIC of claim A6, wherein the static extinction ratio of each of the modulators is greater than about 30 dB.

[0050] A8. The PIC of Al, wherein the phase shifter loss of each of the modulators is no more than about 3 dB.

[0051] A9. The PIC of Al, wherein a 3 dB bandwidth of each of the modulators is at least about 50 GHz.

[0052] A10. The PIC of A9, wherein the 3 dB bandwidth of each of the modulators is at least about 80 GHz.

[0053] Al l. The PIC of A10, wherein the 3 dB bandwidth of each of the modulators is at least about 100 GHz.

[0054] Al 2. The PIC of Al, wherein each of the modulators has a phase shifter length of no more than about 1 mm

[0055] Al 3. The PIC of Al, wherein a drive voltage in a single-ended drive configuration, to obtain a bit error rate (BER) < 3.8xl0-3using NRZ or OOK modulation, is less than about 1 V.

[0056] Al 4. The PIC of Al, wherein a difference between positive and negative drive voltages in a differential drive configuration, to obtain a bit error rate (BER) < 3.8x10’3using NRZ or OOK modulation, is less than about 2 V.

[0057] A15. The PIC of Al, wherein the drive voltage in a single-ended drive configuration, to obtain a bit error rate (BER) < 3.8x10'3using PAM4 modulation, is less than about 1 V.PATENTAttorney Docket No.: 797AA0002PC

[0058] Al 6. The PIC of Al, wherein the drive voltage in a single-ended drive configuration, to obtain a bit error rate (BER) < 3.8xl0’3using PAM6 or PAM8 modulation, is less than about 1 V.

[0059] Al 7. The PIC of Al, wherein the PIC is integrated with one or more linear drive electronics in a linear pluggable (LPO) transceiver.

[0060] Al 8. The PIC of Al, wherein the PIC is integrated with one or more linear drive electronics used in an on-board optics (OBO) transceiver or a near-packaged optics (NPO) transceiver.

[0061] Al 9. The PIC of Al, wherein the PIC is integrated with one or more linear drive electronics in a co-packaged optics (CPO) module.

[0062] A20. The PIC of Al, wherein the modulators are configured for implementation of at least one IQ modulator.

[0063] A21. The PIC of Al, wherein an operating wavelength is between 1260 and 1630 nm.

[0064] A22. The PIC of Al, wherein the PIC is configured for optical I / O or analog computing.

[0065] A23. The PIC of Al, wherein the organic electro-optic (OEO) material has a Pockels response of at least about 100 pm / V.

[0066] A24. The PIC of A23, wherein the OEO material has the Pockels response of at least about 200 pm / V.

[0067] A25. The PIC of Al, wherein a modulation efficiency of the modulators (VnL) is no more than about 1 V-mm.

[0068] A26. The PIC of A25, wherein the modulation efficiency of the modulators (VnL) is no more than about 0.5 V-mm.

[0069] A27. The PIC of Al, wherein the OEO material is crosslinkable.PATENTAttorney Docket No.: 797AA0002PC

[0070] A28. The PIC of Al, wherein the OEO material comprises HLD.

[0071] A29. The PIC of Al, wherein one or more encapsulation layers cover the OEO material to protect the OEO material from water and oxygen.

[0072] A30. The PIC of Al, wherein the PIC has a time to 80% performance (tso) after initial bum -in longer than 1 year at an operation temperature of 120°C.

[0073] A31. The PIC of Al, wherein the PIC has a time to 80% performance (tso) after initial bum-in longer than 1 year at an operation temperature at 85°C.

[0074] A32. The PIC of Al, wherein the PIC is integrated with one or more linear drive electronics in a transceiver, and a data transmission rate of the transceiver is at least about 200 Gb / s per channel.

[0075] A33. The PIC of Al, wherein the PIC is integrated with one or more linear drive electronics in a telecommunication or datacenter communication system.

[0076] A33. An embodiment of the present disclosure includes an intensity modulation with direct detection (IMDD) transceiver, comprising: a photonic integrated circuit (PIC) including a plurality of silicon-organic hybrid (SOH) modulators, each including an organic electro-optic (OEO) material; and an electronic integrated circuit (EIC) configured to drive the plurality of modulators.

[0077] A34. The IMDD transceiver of A33, wherein the PIC further includes: an input coupler; a splitter coupled to the input coupler and a corresponding pair of the SOH modulators; and a pair of output couplers coupled to the corresponding pair of the SOH modulators, respectively, wherein each of the SOH modulators has an extinction ratio of at least about 20 dB.

[0078] A35. The transceiver of A34, wherein the transceiver is operated in a single-ended drive configuration.

[0079] A36. The transceiver of claim A34, wherein the transceiver is operated in a differential drive configuration.PATENTAttorney Docket No.: 797AA0002PC

[0080] A37. The transceiver of claim A34, wherein a driver impedance is equal to or less than about 100 .

[0081] A38. An embodiment of the present disclosure includes a coherent transceiver, comprising: a photonic integrated circuit (PIC) including a plurality of silicon-organic hybrid (SOH) modulators, each including an organic electro-optic (OEO) material; and an electronic integrated circuit (EIC) configured to drive the plurality of modulators.

[0082] A39. The coherent transceiver of A38, wherein each of the SOH modulators has an extinction ratio of at least about 20 dB.

[0083] A40. The transceiver of A38, wherein the transceiver is operated in a single-ended drive configuration.

[0084] A41. The transceiver of A38, wherein the transceiver is operated in a differential drive configuration.

[0085] A42. The transceiver of A38, wherein a driver impedance is equal to or less than about 100 Q.

[0086] The description herein is provided to enable a person having ordinary skill in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to a person having ordinary skill in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the disclosure is not limited to the embodiments and designs described herein but is to be accorded the broadest scope consistent with the principles and novel features disclosed herein.

Claims

PATENTAttorney Docket No.: 797AA0002PCWHAT IS CLAIMED IS:

1. A photonic integrated circuit (PIC), comprising: a splitter configured to divide an input light signal; and first and second silicon-organic hybrid (SOH) modulators coupled to the splitter, each of the first and second SOH modulators including an organic electro-optic (OEO) material.

2. The PIC of claim 1. wherein each of the first and second SOH modulators includes first and second waveguide rails that define a slot therebetween and an OEO filling the slot.

3. The PIC of claim 1. wherein the splitter is a first splitter, the PIC further comprising: third and fourth SOH modulators, each of the third and fourth SOH modulators including the organic electro-optic (OEO) material; a second splitter coupled between the first splitter and the first and second SOH modulators; and a third splitter coupled between the first splitter and the third and fourth SOH modulators.

4. The PIC of claim 1. wherein at least one of the first SOH modulator or the second SOH modulator includes a Mach-Zehnder modulator.

5. The PIC of claim 1, wherein the first and second SOH modulators include a ring resonator, or a racetrack resonator, or both.

6. The PIC of claim 1, wherein each of the first and second SOH modulators has a phase shifter length equal to or shorter than about 1 mm, a 3 dB bandwidth of each of the first and second SOH modulators is at least about 50 GHz, a static extinction ratio of each of the first and second SOH modulators is equal to or greater than about 20 dB. a phase shifter loss of each of the first and second SOH modulators is equal to or less than about 3 dB, and a modulation efficiency of each of the first and second SOH modulators (VnL) is equal to or less than about 1 V mm.PATENTAttorney Docket No.: 797AA0002PC7. The PIC of claim 1. wherein the OEO material has a Pockels response of at least about 100 pm / V.

8. The PIC of claim 1, wherein the OEO material is a crosslinkable OEO material.

9. The PIC of claim 8, wherein the OEO material includes HLD.

10. The PIC of claim 1. wherein the PIC utilizes a drive voltage for modulation less than about IV to obtain a bit error rate (BER) < 3.8xl0‘3.

11. A transceiver including the PIC of claim 1 , wherein the transceiver includes an electronic integrated circuit (EIC) configured to drive the first and second SOH modulators, and the transceiver is any one of a linear pluggable optics (LPO) transceiver, an on-board optics (OBO) or near-packaged optics (NPO) transceiver, and a co-packaged optics (CPO) transceiver.

12. An intensity modulation with direct detection (IMDD) transceiver, comprising: a photonic integrated circuit (PIC) including first and second silicon-organic hybrid (SOH) modulators, each of the first and second SOH modulators including an organic electro-optic (OEO) material; and an electronic integrated circuit (EIC) configured to drive the first and second SOH modulators.

13. The transceiver of claim 12, wherein the PIC further includes: an input coupler; a first splitter coupled to the input coupler; a second splitter coupled between the first splitter and the first and second SOH modulators; third and fourth SOH modulators, each of the third and fourth SOH modulators including the organic OEO material; and a third splitter coupled between the first splitter and the third and fourth SOH modulators.PATENTAttorney Docket No.: 797AA0002PC14. The transceiver of claim 13, wherein the OEO material has a Pockels response of at least about 100 pm / V. and the OEO material is a crosslinkable OEO material.

15. The transceiver of claim 14, wherein the OEO material includes HLD.

16. The transceiver of claim 13, wherein a data transmission rate of the transceiver is at least about 200 Gb / s per channel.

17. The transceiver of claim 13, wherein each of the first, second, third, and fourth SOH modulators has a static extinction ratio equal to or greater than 20 dB.

18. A coherent transceiver, comprising: a splitter configured to divide an input laser into two outputs for a transmission path and a local oscillator path; and a photonic integrated circuit (PIC) on the transmission path including a first IQ modulator and a second IQ modulator, the first IQ modulator including first and second silicon-organic hybrid (SOH) modulators, the second IQ modulator including third and fourth SOH modulators, each of the first, second, third, and fourth SOH modulators including an organic electro-optic (OEO) material.

19. The transceiver of claim 18, wherein the OEO material has a Pockels response of at least about 100 pm / V. and the OEO material is a crosslinkable OEO material.

20. The transceiver of claim 18, wherein each of the first, second, third, and fourth SOH modulators has a static extinction ratio equal to or greater than about 20 dB.

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