Fiber texture determination method and system based on polychromatic x-ray diffraction

Abstract

The present disclosure relates to the technical field of material detection, and in particular to a fiber texture determination method and system based on polychromatic X-ray diffraction. The method comprises: controlling the orientation of a sample under test, so that a polychromatic X-ray irradiates said sample in a direction perpendicular to the fiber axis of said sample; acquiring a first diffraction signal generated after the polychromatic X-ray irradiates said sample; and processing the first diffraction signal to obtain internal fiber texture information of said sample. In the present disclosure, by using an X-ray diffraction technique and a conventional laboratory polychromatic X-ray source, rapid and quantitative detection of the internal fiber texture of a sample under test can be achieved under a polychromatic X-ray condition without requiring an X-ray monochromator.

Description

A method and system for measuring wire texture based on polychromatic X-ray source diffraction

[0001] The present application claims priority to the Chinese patent application No. 202411137570.5, filed on August 19, 2024, and entitled "A method and system for measuring wire texture based on polychromatic X-ray source diffraction", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present disclosure relates to the technical field of material detection, and in particular to a method and system for measuring wire texture based on polychromatic X-ray source diffraction. BACKGROUND

[0003] The texture of polycrystalline materials has a huge impact on their mechanical properties, etc., so accurate quantitative determination of the texture of materials is crucial for studying their various characteristics, and thus further evaluating the performance of the materials or ensuring the quality of the products. For example, neodymium iron boron, samarium iron nitrogen, etc. magnets are all polycrystalline wire texture materials. The determination of the texture inside (not on the surface) of these magnets is of great significance to the research and improvement of the performance of the magnets to the theoretical limit, which can greatly promote the development of emerging industries such as new energy.

[0004] There are mainly two types of textures of polycrystalline materials: the first is wire texture, and the second is sheet texture; for polycrystalline materials with wire texture, the crystallographic feature is that the crystal direction of each grain tends to be parallel to a certain direction of the polycrystalline material, which is called the wire axis direction of the wire texture, and the other crystal directions are symmetrically distributed about the wire axis direction; polycrystalline wire texture materials usually exist in drawn and pulled wires, rods, and various surface coatings.

[0005] However, a traditional way to determine the wire texture of polycrystalline materials is to use a diffractometer with wire texture measurement function to measure the pole figure. This way is extremely slow in measurement time, and can only measure the wire texture on the surface of the sample. Another way is to use the "photographic method", which can measure the wire texture inside the sample through "transmission diffraction", but this way requires high-brightness monochromatic X-rays, such as a synchrotron radiation source equipped with an X-ray monochromator or other strong X-ray sources equipped with a monochromator. Since the X-ray monochromator filters out most of the X-rays, the brightness of the X-rays is greatly reduced, so a stronger X-ray source is often needed, resulting in extremely high requirements for hardware for this method. Whether it is a strong X-ray source (such as a synchrotron) or an X-ray monochromator is difficult to obtain, and it is impossible to perform the measurement under laboratory conditions or to apply it to the detection of a large number of samples.

[0006] SUMMARY

[0007] In view of this, the present disclosure proposes a filament texture determination method, device, system, electronic equipment and storage medium based on polychromatic X-ray source diffraction.

[0008] According to an aspect of the present disclosure, a filament texture determination method based on polychromatic X-ray source diffraction is provided, the method comprising:

[0009] Controlling the orientation of the sample to be tested so that the polychromatic X-rays are incident on the sample to be tested perpendicular to the filament axis direction of the sample to be tested;

[0010] Obtaining a first diffraction signal generated after the polychromatic X-rays are incident on the sample to be tested;

[0011] Processing the first diffraction signal to obtain filament texture information inside the sample to be tested; wherein the filament texture information inside the sample to be tested includes: the crystal plane density corresponding to the angle taken by the included angle between the normal vector of at least one crystal plane in the sample to be tested and the filament axis direction of the sample to be tested, the crystal plane density corresponding to the first angle taken by the included angle between the normal vector of the first crystal plane and the filament axis direction of the sample to be tested is determined by the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal; the first angle is any angle in the at least one angle, and the first crystal plane is any crystal plane in the at least one crystal plane.

[0012] In a possible implementation, the controlling the orientation of the sample to be tested so that the polychromatic X-rays are incident on the sample to be tested perpendicular to the filament axis direction of the sample to be tested comprises:

[0013] Controlling the polychromatic X-rays to irradiate the sample to be tested to generate a second diffraction signal;

[0014] Processing the second diffraction signal to determine the symmetry of the diffraction pattern corresponding to the second diffraction signal on the detector plane;

[0015] According to the symmetry of the diffraction pattern, determining whether the filament axis direction of the sample to be tested is perpendicular to the incident direction of the polychromatic X-rays;

[0016] In the case where the filament axis direction of the sample to be tested is not perpendicular to the incident direction of the polychromatic X-rays, adjusting the orientation of the sample to be tested and repeatedly performing the operations of controlling the polychromatic X-rays to irradiate the sample to be tested and the subsequent operations until the incident direction of the polychromatic X-rays is perpendicular to the filament axis direction of the sample to be tested, so that the polychromatic X-rays are incident on the sample to be tested perpendicular to the filament axis direction of the sample to be tested.

[0017] In a possible implementation, the processing the first diffraction signal to obtain the filament texture information inside the sample to be tested comprises:

[0018] processing the first diffraction signal to determine a position of a first diffraction spot corresponding to the first crystal face, wherein the first diffraction spot is any diffraction spot formed by the diffraction signal generated by the first crystal face in the first diffraction signal on a detector plane;

[0019] obtaining a crystal face spacing corresponding to the first crystal face;

[0020] determining a first wavelength corresponding to the first diffraction spot based on the crystal face spacing corresponding to the first crystal face and the position of the first diffraction spot, wherein the first wavelength is a wavelength corresponding to the X-ray generating the first diffraction spot in the polychromatic X-ray;

[0021] determining a crystal face density corresponding to the first crystal face when the first angle is taken based on the first wavelength, the first angle, the crystal face spacing corresponding to the first crystal face, and the first diffraction signal, and the included angle between the normal vector of the first crystal face and the fiber axis direction of the sample to be measured.

[0022] In a possible implementation, the method further comprises:

[0023] processing the first diffraction signal to determine a diffraction signal corresponding to the first wavelength;

[0024] determining a diffraction intensity density corresponding to a first polar angle based on the diffraction signal corresponding to the first wavelength, wherein the diffraction intensity density represents an intensity of a diffraction spot corresponding to a unit polar angle in the detector plane; and the first polar angle is determined by the first wavelength, the first angle, and the crystal face spacing corresponding to the first crystal face.

[0025] determining a crystal face density corresponding to the first crystal face when the first angle is taken based on the first wavelength, the crystal face spacing corresponding to the first crystal face, the first angle, and the diffraction intensity density corresponding to the first polar angle, and the included angle between the normal vector of the first crystal face and the fiber axis direction of the sample to be measured.

[0026] In a possible implementation, the method further comprises:

[0027] controlling the position of the sample to be measured so that the polychromatic X-ray is irradiated to a preset position of the sample to be measured;

[0028] and / or,

[0029] controlling the shape and / or size of the region on which the polychromatic X-ray is irradiated to the sample to be measured.

[0030] In a possible implementation, the sample to be measured is a magnet with a polycrystalline filament texture.

[0031] According to an aspect of the present disclosure, there is provided a filament texture determination device based on polychromatic X-ray source diffraction, comprising:

[0032] a control module configured to control the orientation of the sample to be measured so that polychromatic X-rays are incident on the sample to be measured perpendicularly to the filament axis direction of the sample to be measured;

[0033] an acquisition module configured to acquire a first diffraction signal generated after the polychromatic X-rays are incident on the sample to be measured;

[0034] a processing module configured to process the first diffraction signal to obtain filament texture information inside the sample to be measured; wherein the filament texture information inside the sample to be measured comprises: a crystal plane density corresponding to an angle taken by a normal vector of at least one crystal plane in the sample to be measured and a filament axis direction of the sample to be measured, and a crystal plane density corresponding to a first angle taken by a normal vector of a first crystal plane and the filament axis direction of the sample to be measured, which is determined by the first angle, a crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal; the first angle is any angle in the at least one angle, and the first crystal plane is any crystal plane in the at least one crystal plane.

[0035] According to an aspect of the present disclosure, there is provided a filament texture determination system based on polychromatic X-ray source diffraction, comprising: an X-ray source, an X-ray collimation device, a motorized sample stage, an X-ray transmission blocker, a detector, and a control device; wherein,

[0036] the X-ray source is configured to generate polychromatic cone beam X-rays;

[0037] the X-ray collimation device is configured to convert the polychromatic cone beam X-rays into polychromatic pencil beam X-rays;

[0038] the motorized sample stage is configured to place a sample to be measured and adjust the position and / or orientation of the sample to be measured;

[0039] the X-ray transmission blocker is configured to block X-rays transmitted after the polychromatic pencil beam X-rays are incident on the sample to be measured;

[0040] the detector is configured to receive a diffraction signal generated after the polychromatic pencil beam X-rays are incident on the sample to be measured;

[0041] the control device is connected to the X-ray source, the X-ray collimation device, the motorized sample stage, and the detector, and is configured to execute the above method.

[0042] According to another aspect of the present disclosure, an electronic device is provided, comprising: a processor; a memory for storing processor-executable instructions; wherein the processor is configured to implement the above method when executing the instructions stored in the memory.

[0043] According to another aspect of the present disclosure, a non-volatile computer-readable storage medium having stored thereon computer program instructions is provided, wherein the computer program instructions, when executed by a processor, implement the above method.

[0044] According to another aspect of the present disclosure, a computer program product is provided, comprising computer-readable code, or a non-volatile computer-readable storage medium carrying computer-readable code, which, when run in a processor of an electronic device, causes the processor in the electronic device to perform the above method.

[0045] According to the aspects of the present disclosure, the orientation of the sample under test is controlled so that the polychromatic X-rays are irradiated to the sample under test perpendicularly to the fiber axis direction of the sample under test; a first diffraction signal generated after the polychromatic X-rays are irradiated to the sample under test is acquired; and the first diffraction signal is processed to obtain the fiber texture information inside the sample under test. The fiber texture information inside the sample under test includes: the crystal plane density corresponding to the angle taken by the included angle between the normal vector of at least one crystal plane in the sample under test and the fiber axis direction of the sample under test; and the crystal plane density corresponding to the first angle taken by the included angle between the normal vector of the first crystal plane and the fiber axis direction of the sample under test is determined by the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal. Thus, using the X-ray diffraction technology, the polychromatic X-ray source commonly used in the laboratory is used without using the X-ray monochromator, so that the fiber texture inside the sample under test can be quickly and quantitatively detected under the polychromatic X-ray condition.

[0046] Other features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments, taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0047] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate exemplary embodiments, features, and aspects of the present disclosure and serve to explain the principles of the present disclosure.

[0048] FIG. 1 shows a schematic diagram of a theoretical derivation of fiber texture determination of a polycrystalline material according to an embodiment of the present disclosure;

[0049] FIG. 2 shows a diffraction pattern of a certain crystal plane when the X-rays incident under the polychromatic X-ray condition are perpendicular to the fiber axis direction of the fiber texture according to an embodiment of the present disclosure;

[0050] FIG. 3 shows a flow chart of a wire texture determination method based on polychromatic X-ray source diffraction according to an embodiment of the present disclosure;

[0051] FIG. 4 shows a structural schematic diagram of a wire texture determination system based on polychromatic X-ray source diffraction according to an embodiment of the present disclosure;

[0052] FIG. 5 shows a structural schematic diagram of an electric sample stage 3 according to an embodiment of the present disclosure;

[0053] FIG. 6 shows a structural schematic diagram of a wire texture determination device based on polychromatic X-ray source diffraction according to an embodiment of the present disclosure;

[0054] FIG. 7 shows a block diagram of an electronic device 1900 according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0055] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numbers in different drawings represent the same or similar elements. Although various aspects of embodiments are illustrated in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0056] In this specification, the reference to “one embodiment” or “some embodiments” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrases “in some embodiments”, “in other embodiments”, “in additional embodiments”, and so on, do not necessarily all refer to the same embodiments, although the features, structures, or characteristics can be common to some embodiments. The terms “comprising”, “including”, “having” and the like are meant to be interpreted open-ended when they appear in this specification. They are not meant to be interpreted as limiting the claimed application to the listed components or steps unless otherwise specifically indicated.

[0057] In this specification, “at least one” means one or more, and “multiple” means two or more. The term “and / or” describes an association relationship of associated objects, and means that there can be three relationships, for example, A and / or B can mean that A exists alone, A and B exist together, and B exists alone, where A and B can be singular or plural. The character “ / ” generally represents an “or” relationship between the associated objects. “At least one of the following” or the like means any combination of these items, including any combination of single or multiple items. For example, at least one of a, b, or c can mean a, b, c, a-b, a-c, b-c, or a-b-c, where a, b, and c can be singular or plural.

[0058] In addition, for better illustrating the present disclosure, numerous specific details are set forth in the following detailed description. One skilled in the art will understand that the present disclosure can be practiced without certain specific details. In some instances, well-known methods, structures, elements, and circuits have not been described in detail in order to avoid obscuring the present disclosure.

[0059] In order to meet the demand for a large number of detections of the internal fiber texture of the polycrystalline material with fiber texture, and solve the problem that it is difficult to obtain a strong monochromatic X-ray source in the existing "photographic method" for detecting fiber texture, the embodiment of the present disclosure provides a fiber texture measurement method and system based on polychromatic X-ray source diffraction (for detailed description, see below), which uses X-ray diffraction technology, uses a conventional polychromatic X-ray source in a laboratory, and does not need to use an X-ray monochromator, so that the internal fiber texture of the sample to be detected can be quickly and quantitatively detected under polychromatic X-ray conditions; it can be widely applied to laboratory environment, and can be applied to large-scale sample detection, thereby promoting the beneficial development of material research and industrial product nondestructive testing, which is of great significance.

[0060] Among them, the X-ray diffraction technology is a sensitive optical detection means, which uses X-ray to irradiate the sample to be detected to generate diffraction signals. These diffraction signals can reflect the crystal structure information inside the sample to be detected, including crystal type, polycrystalline fiber texture, stress, etc.

[0061] In order to facilitate understanding, the principle derivation process of the fiber texture measurement based on polychromatic X-ray source diffraction in the embodiment of the present disclosure is first described below.

[0062] Figure 1 shows a schematic diagram of the theoretical derivation of the fiber texture measurement of a polycrystalline material according to an embodiment of the present disclosure, as shown in Figure 1, in a three-dimensional space, the x direction is the fiber axis direction of the fiber texture of the polycrystalline material; the X-ray is incident on the polycrystalline material perpendicular to the fiber axis direction of the fiber texture (i.e. along the z direction); the large ball on the left is a "reflection ball", the center of the ball is located on the z axis, and the radius of the ball is the inverse of the wavelength of the incident X-ray Among them, λ is the wavelength of the X-ray incident on the polycrystalline material; the small ball on the right is a "reciprocal ball", the center of the ball is located at the origin of the coordinates, and the radius of the ball is d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the sphere, and g is the reciprocal vector (also referred to as the reciprocal space vector) corresponding to the crystal plane; wherein the crystal plane refers to a polyhedral shape that can develop in the self-growth process of a crystal, which is composed of planes of different orientations; for example, the crystal plane can be represented by a Miller index (hkl) or {hkt}, etc., wherein in the embodiments of the present disclosure, "a certain crystal plane" or "a crystal plane" refers to a set of parallel crystal planes (i.e., a certain parallel crystal plane family) of a certain (hkl) value, and the interplanar spacing represents the distance between two adjacent crystal planes in the parallel crystal plane family. According to the Ewald diffraction sphere theory, when the "reflection sphere" intersects with a certain reciprocal vector, the straight line direction connecting the center of the "reflection sphere" and the intersection point is the direction of the X-ray diffracted by the crystal plane corresponding to the reciprocal vector, and the diffracted X-ray is received by the detector; if the polycrystalline material is an isotropic polycrystalline material, the reciprocal vectors corresponding to the crystal planes of the polycrystalline material will be uniformly distributed on a spherical surface of a certain radius (the reciprocal of the interplanar spacing of the crystal plane ) in space, i.e., a "reciprocal sphere"; however, for a polycrystalline material with a wire texture, the reciprocal vectors corresponding to the crystal planes of the polycrystalline material other than the crystal planes with the same direction as the wire axis of the wire texture are distributed on a circular ring with an angle θ with the wire axis of the wire texture, and form two "symmetrically opposite" conical pyramids with the center of the "reciprocal sphere".

[0063] The equation of the large sphere (i.e., the "reflection sphere") in the above FIG. 1 is shown in the following formula (1):

[0064] wherein λ is the X-ray wavelength incident to the polycrystalline material, and x, y, and z respectively represent the coordinates of a point on the "reflection sphere" in the x direction, the y direction, and the z direction.

[0065] The equation of the small sphere (i.e., the "reciprocal sphere") in the above FIG. 1 is shown in the following formula (2):

[0066] wherein d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", and x, y, and z respectively represent the coordinates of a point on the "reciprocal sphere" in the x direction, the y direction, and the z direction.

[0067] The two equations shown in the above (1) and (2) are combined: Simplifying can obtain formula (3):

[0068] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", and z represents the coordinate of a point on the intersection line of the "reflection sphere" and the "reciprocal sphere" in the z direction.

[0069] The intersection equation of the "reflection sphere" and the "reciprocal sphere" is shown in the following formula (4) by substituting the above formula (3) into the sphere equation shown in the above formula (1) or formula (2):

[0070] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", and x, y, z respectively represent the coordinates of a point on the intersection line of the "reflection sphere" and the "reciprocal sphere" in the x direction, the y direction, and the z direction.

[0071] Supposing that the angle between the reciprocal vector g of the crystal plane of the polycrystalline material and the fiber axis of the fiber texture of the polycrystalline material is θ, the equation of the circle (only considering the positive half axis in the x direction) formed by the reciprocal vector g of the crystal plane is shown in the following formula (5):

[0072] wherein d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", θ is the angle between the reciprocal vector g of the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and x, y, z respectively represent the coordinates of a point on the circle formed by the reciprocal vector d of the crystal plane in the x direction, the y direction, and the z direction.

[0073] The intersection equation of the "reflection sphere" and the "reciprocal sphere" shown in the above formula (4) and the equation of the circle formed by the reciprocal vector g of the crystal plane shown in the above formula (5) are combined to obtain the reciprocal space diffraction position shown in the following formula (6):

[0074] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", θ is the angle between the reciprocal vector g of the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and x, y, z respectively represent the coordinates of the reciprocal space diffraction position in the x direction, the y direction, and the z direction.

[0075] The coordinates of the exit point of the diffraction line (i.e. the diffracted X-ray) of the polycrystalline material in the reciprocal space shown in the above formula (7) are shown in the following formula (7):

[0076] wherein λ is the X-ray wavelength incident to the polycrystalline material.

[0077] The diffraction line is obtained by connecting the exit point of the diffraction line in the reciprocal space shown in the above formula (7) and the reciprocal space diffraction position shown in the above formula (6), and the straight line equation (only considering one diffraction point) of the diffraction line is shown in the following formula (8):

[0078] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", θ is the included angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and x, y, z respectively represent the coordinates of a point on the diffraction line in the x direction, the y direction, and the z direction.

[0079] The linear equation of the diffraction line represented by the above formula (8) is simplified to the following formula (9):

[0080] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", θ is the included angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and x, y, z respectively represent the coordinates of a point on the diffraction line in the x direction, the y direction, and the z direction.

[0081] The direction vector of the linear equation of the diffraction line represented by the above formula (9) is represented by the following formula (10):

[0082] After the above diffraction line reaches the detector, a diffraction spot is formed on the detector plane. The position of the diffraction spot formed on the detector plane by the diffraction line generated by the above crystal plane is derived below. It is assumed that the position of the mass point of the polycrystalline material is at the coordinate origin, that is, the coordinates of the exit point of the diffraction line generated by the polycrystalline material in the reciprocal space are (0, 0, 0), that the detector plane is perpendicular to the z axis of the three-dimensional space, and that the distance between the detector plane and the coordinate origin is D. The equation of the detector plane is represented by the following formula (11):

[0083] wherein z is the coordinate of a point on the detector plane in the z direction.

[0084] According to the direction vector represented by the above formula (10), the linear equation of the diffraction line corresponding to the crystal plane (only one diffraction point is considered) is represented by the following formula (12):

[0085] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", θ is the included angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and x, y, z respectively represent the coordinates of a point on the diffraction line in the x direction, the y direction, and the z direction.

[0086] The position of the diffraction spot is obtained by combining the equation of the detector plane represented by the above formula (11) and the linear equation of the diffraction line represented by the above formula (12) as follows:

[0087] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", D represents the distance between the detector plane and the point position of the polycrystalline material (assuming the point position as the coordinate origin), x d , y d , and z d respectively represent the coordinates of the diffraction spot in the x direction, y direction, and z direction in the three-dimensional space.

[0088] Processing the above formula (13) obtains formula (14)

[0089] wherein λ is the X-ray wavelength incident to the polycrystalline material, d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", D represents the distance between the detector plane and the point position of the polycrystalline material, x d , and y d respectively represent the coordinates of the diffraction spot in the x direction and y direction in the three-dimensional space.

[0090] An important conclusion can be obtained from formula (14): for a certain crystal plane of the polycrystalline material, under the condition of monochromatic X-ray incident at a certain wavelength λ, the diffraction signal received by the detector forms a diffraction spot on the detector plane, and the diffraction spot is located on a circular ring, and the radius of the circular ring corresponds to the wavelength λ of the incident monochromatic X-ray, and is irrelevant to the angle θ between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material. That is, even if the angle θ between the reciprocal vector g corresponding to a certain crystal plane and the fiber axis of the fiber texture of the polycrystalline material fluctuates within a certain angle range, under the irradiation of monochromatic X-ray at the same wavelength, the diffraction spot formed on the detector plane is located on the same circular ring when the angle θ takes different angles within the angle range. The conclusion can be used for qualitative determination of the fiber texture of the polycrystalline material.

[0091] On the detector plane, the intersection of the detector plane and the z axis of the three-dimensional space is taken as the origin, a polar coordinate system is established, and a certain diffraction spot on the detector plane corresponding to a certain crystal plane is expressed by polar coordinates to obtain the following formula (15)

[0092] wherein d is the interplanar spacing of a certain crystal plane of the polycrystalline material corresponding to the "reciprocal sphere", r and respectively represent two polar coordinate parameters of the diffraction spot on the detector plane corresponding to the crystal plane, r represents the polar radius of the diffraction spot, represents the polar angle of the diffraction spot, λ is the X-ray wavelength incident to the polycrystalline material, θ is the angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, D represents the distance between the detector plane and the point position of the polycrystalline material, xd , y d respectively represent the coordinates of the diffraction spot in the x direction and the y direction in the three-dimensional space.

[0093] The above formula (15) is simplified to the following formula (16)

[0094] wherein d is the interplanar spacing of a certain crystal face of the polycrystalline material corresponding to the reciprocal sphere, r and respectively represent two polar coordinate parameters of the diffraction spot on the detector plane corresponding to the crystal face, λ is the X-ray wavelength incident to the polycrystalline material, θ is the angle between the reciprocal vector g corresponding to the crystal face and the fiber axis of the fiber texture of the polycrystalline material, D represents the distance between the detector plane and the mass point position of the polycrystalline material, x d , y d respectively represent the coordinates of the diffraction spot in the x direction and the y direction in the three-dimensional space.

[0095] The above formula (16) can be obtained as formula (17)

[0096] wherein d is the interplanar spacing of a certain crystal face of the polycrystalline material corresponding to the reciprocal sphere, respectively represent two polar coordinate parameters of the diffraction spot on the detector plane corresponding to the crystal face, λ is the X-ray wavelength incident to the polycrystalline material, θ is the angle between the reciprocal vector g corresponding to the crystal face and the fiber axis of the fiber texture of the polycrystalline material, D represents the distance between the detector plane and the mass point position of the polycrystalline material, x

[0097] For the polycrystalline material with the fiber texture, the angle between the normal vector of a certain crystal face (i.e. the same (hkl) parallel crystal face group) and the fiber axis of the fiber texture is not a fixed value, but fluctuates within a certain angle range; that is, the angle values of the normal vectors of the crystal faces in the same parallel crystal face group and the fiber axis of the fiber texture fluctuate within a certain angle range. Since the direction of the reciprocal vector g corresponding to the crystal face is the same as the direction of the normal vector of the crystal face, the angle θ between the reciprocal vector g corresponding to the crystal face and the fiber axis of the fiber texture is also not a fixed value, but fluctuates within a certain angle range, and the fluctuation is the same as that of the angle between the normal vector of the crystal face and the fiber axis of the fiber texture. Since all the crystal faces in the polycrystalline material are on the same unit cell, wherein the unit cell is the most basic geometric unit of the crystal, and each unit cell contains the symmetry and arrangement of the crystal; therefore, for all the crystal faces (i.e. each parallel crystal face group) in the polycrystalline material, the angle ranges corresponding to the angles between the normal vectors of different crystal faces and the fiber axis of the fiber texture are the same, and only the fluctuation of the angle between the normal vector of a certain crystal face and the fiber axis of the fiber texture within the corresponding angle range needs to be analyzed, so as to obtain the fluctuation of the angle between the normal vectors of other crystal faces in the unit cell and the fiber axis of the fiber texture within the corresponding angle range.

[0098] When the incident X-rays are polychromatic X-rays, and only one crystal plane of the polycrystalline material is considered, the angle θ between the normal vector of the crystal plane and the fiber axis of the fiber texture fluctuates around a certain θ' value. FIG. 2 shows a diffraction pattern corresponding to the diffraction signal of a certain crystal plane generated by the incident X-rays perpendicular to the fiber axis of the fiber texture under the polychromatic X-ray condition according to an embodiment of the present disclosure. The diffraction pattern is the diffraction pattern formed by the diffraction signal received by the detector. As shown in FIG. 2, when the polychromatic X-rays are incident perpendicular to the fiber axis of the fiber texture, the diffraction pattern corresponding to the diffraction signal of a certain crystal plane of the fiber texture in the detector plane is generally in the shape of four "petals", and has two symmetry axes. In addition, it can be known from the above derivation that, for a certain crystal plane, the corresponding angle range of the crystal plane is only reflected in the widening of the diffraction pattern corresponding to the diffraction signal of the crystal plane in the detector plane along the circular arc direction, and the greater the widening, the greater the corresponding angle range of the crystal plane. The widening of the diffraction pattern corresponding to the diffraction signal of the crystal plane in the detector plane along the radius direction of the circular ring in the detector plane when the polychromatic X-rays are incident perpendicular to the fiber axis of the fiber texture is only related to the energy spectrum of the incident polychromatic X-rays, and the radius r of each circular ring corresponds to a monochromatic X-ray of each wavelength. This conclusion can be used for qualitative determination of the fiber texture of the polycrystalline material.

[0099] Exemplarily, the target of the quantitative detection of the fiber texture in the embodiments of the present disclosure can be to determine the corresponding crystal plane density when the angle between the normal vector of a certain crystal plane in the polycrystalline material and the fiber axis of the fiber texture varies within the corresponding angle range.

[0100] The following solves the relationship between the corresponding crystal plane density distribution and the diffraction intensity density distribution on the detector plane when the angle between the reciprocal vector corresponding to a certain crystal plane and the fiber axis of the fiber texture of the polycrystalline material varies within a certain angle range for X-rays of a certain wavelength; wherein the diffraction intensity density represents the intensity of the diffraction spot corresponding to the unit polar angle in the detector plane. Since the angle between the normal vector of the crystal plane and the fiber axis of the fiber texture is the same as the angle between the reciprocal vector corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, the relationship is the relationship between the corresponding crystal plane density distribution when the angle between the normal vector of the crystal plane and the fiber axis of the fiber texture varies and the intensity distribution of the diffraction spot on the detector plane.

[0101] It is assumed that the number of crystal planes of a certain crystal plane (i.e. parallel crystal plane group) is distributed according to the angle of the angle between the reciprocal vector corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material as shown in the following formula (18):

[0102] wherein θ represents the angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and N represents the number of crystal planes; and p represents the corresponding crystal plane density.hkl (θ) represents the corresponding crystal plane density, and the unit is: pieces / rad.

[0103] Referring to FIG. 2, there are two symmetry axes in the diffraction pattern on the detector plane, which divides the diffraction pattern into four symmetrical regions, and the above formula (18) satisfies the following formula (19) for any region:

[0104] wherein θ represents the included angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and ρ hkl (θ) represents the corresponding crystal plane density, and N0 is the total number of crystal planes corresponding to the region.

[0105] After normalization of ρ hkl (θ), ρ hkl，相对 (θ) is obtained, which satisfies the following formula (20):

[0106] wherein θ represents the included angle between the reciprocal vector g corresponding to the crystal plane and the fiber axis of the fiber texture of the polycrystalline material, and ρ hkl,相对 (θ) represents the normalized crystal plane density, and θ1 and θ2 are the upper and lower boundaries of the angle range corresponding to the included angle.

[0107] Suppose that the diffraction intensity density (in the direction of the circular arc) on the detector plane of a certain circular ring (i.e. the diffraction pattern formed by the diffraction signal of X-ray irradiation of a certain wavelength on the detector plane) is as follows:

[0108] wherein, θ represents the polar angle of the diffraction spot on the detector plane corresponding to the crystal plane, I represents the diffraction intensity, ρ -2 (θ) represents the corresponding diffraction intensity density, and the unit is: W·m -1 ·rad

[0109] The above formula (21) satisfies

[0110] wherein, θ represents the polar angle of the diffraction spot on the detector plane corresponding to the crystal plane, ρ -2 (θ) represents the corresponding diffraction intensity density, and I0 is the total diffraction intensity corresponding to the region, and the unit is: W·m

[0111] After normalization of ρ , ρ is obtained, which satisfies the following formula (23):

[0112] wherein, denotes the polar angle of the diffraction spot on the detector plane corresponding to the crystal face, denotes the intensity density of the normalized diffraction spot, and respectively, and the upper and lower bounds of the value.

[0113] Differentiating the above formula (17) can obtain

[0114] wherein, θ denotes the angle between the reciprocal vector g corresponding to the crystal face and the fiber axis of the fiber texture of the polycrystalline material, denotes the polar angle of the diffraction spot on the detector plane corresponding to the crystal face, λ is the X-ray wavelength incident to the polycrystalline material, and d is the interplanar spacing corresponding to the crystal face.

[0115] Under the condition of monochromatic X-ray (i.e. X-ray containing one wavelength) irradiation, the interplanar density of the crystal face is proportional to the diffraction intensity density, so there is the following formula (25)

[0116] wherein, ρ hkl,相对 (θ) denotes the normalized interplanar density, θ denotes the angle between the reciprocal vector g corresponding to the crystal face and the fiber axis of the fiber texture of the polycrystalline material, denotes the polar angle of the diffraction spot on the detector plane corresponding to the crystal face, λ is the wavelength of the monochromatic X-ray incident to the polycrystalline material, d is the interplanar spacing corresponding to the crystal face, and the value of G(θ) is determined by the above formula (24).

[0117] The polychromatic X-ray source diffraction-based fiber texture determination method provided in the embodiments of the present disclosure will be described in detail below.

[0118] FIG. 3 shows a flowchart of a polychromatic X-ray source diffraction-based fiber texture determination method according to an embodiment of the present disclosure. As an example, the method can be executed by an electronic device with data processing capability, as shown in FIG. 3, and includes the following steps:

[0119] Step 301: Control the orientation of the sample to be measured so that the polychromatic X-ray is incident to the sample to be measured perpendicularly to the fiber axis direction of the sample to be measured;

[0120] wherein the sample to be measured is a polycrystalline fiber texture material. As an example, the sample to be measured can be placed on an electric sample stage, which can adjust the orientation and / or position of the sample to be measured according to instructions. As an example, the polychromatic X-ray can be a polychromatic pencil beam X-ray.

[0121] In a possible implementation, the sample to be measured is a magnet with a polycrystalline wire texture. Exemplarily, the sample to be measured can be a magnet such as a neodymium iron boron magnet, a samarium iron nitride magnet, or the like, which is a polycrystalline wire texture material. Determining the wire texture inside (not on the surface) of such a sample is of great significance to research and improvement of the performance of the magnet to the theoretical limit, and can greatly promote the development of emerging industries such as new energy.

[0122] In the wire texture of the sample to be measured, a certain crystal direction of each crystal grain tends to be preferentially arranged parallel to the wire axis.

[0123] In this step, the orientation of the sample to be measured can be automatically adjusted to ensure that the polychromatic X-rays are perpendicular to the wire axis direction of the sample to be measured. When the polychromatic X-rays are perpendicular to the wire axis direction of the sample to be measured, the diffraction signal generated by the sample to be measured will have two axes of symmetry, so that the wire texture information inside the sample to be measured can be determined in the scenario shown in FIG. 1.

[0124] Based on the foregoing derivation, when the polychromatic X-rays are perpendicular to the wire axis direction of the wire texture, the diffraction signal generated by the sample to be measured has symmetry in the diffraction pattern corresponding to the detector plane. For any crystal plane of the sample to be measured, the diffraction signal generated by diffraction through the crystal plane has a 4-petal shape in the diffraction pattern corresponding to the detector plane, and has two axes of symmetry. That is, only when the polychromatic X-rays are perpendicular to the wire axis direction of the sample to be measured, the diffraction signal generated by the sample to be measured has symmetry in the diffraction pattern corresponding to the detector plane. When the incident direction of the polychromatic X-rays is not perpendicular to the wire axis direction of the sample to be measured, the diffraction signal generated by the sample to be measured does not have symmetry in the diffraction pattern corresponding to the detector plane.

[0125] In a possible implementation, the control of the orientation of the sample to be measured to ensure that the polychromatic X-rays are perpendicular to the wire axis direction of the sample to be measured includes: controlling the polychromatic X-rays to irradiate the sample to be measured to generate a second diffraction signal; processing the second diffraction signal to determine the symmetry of the diffraction pattern corresponding to the detector plane; determining whether the wire axis direction of the sample to be measured is perpendicular to the incident direction of the polychromatic X-rays according to the symmetry of the diffraction pattern; and in the case where the wire axis direction of the sample to be measured is not perpendicular to the incident direction of the polychromatic X-rays, adjusting the orientation of the sample to be measured, and repeatedly performing the operation of controlling the polychromatic X-rays to irradiate the sample to be measured and the subsequent operation until the incident direction of the polychromatic X-rays is perpendicular to the wire axis direction of the sample to be measured, so that the polychromatic X-rays are perpendicular to the wire axis direction of the sample to be measured.

[0126] Exemplarily, in the initial stage of the determination, the sample to be determined can be placed in any direction, and the polychromatic X-rays are controlled to irradiate the sample to be determined; the second diffraction signal can be received by the detector placed perpendicularly to the incident direction of the polychromatic X-rays, and the diffraction pattern corresponding to the second diffraction signal is the diffraction pattern formed by the second diffraction signal on the detector plane.

[0127] Exemplarily, judging the symmetry of the diffraction pattern corresponding to the second diffraction signal on the detector plane can include judging whether the diffraction pattern corresponding to the second diffraction signal on the detector plane has symmetry. As an example, whether the diffraction pattern has symmetry can be judged by existing technologies such as machine learning; for example, a neural network model can be pre-trained by using existing technologies to obtain a model having an image symmetry recognition function, and after receiving the second diffraction signal, the pre-trained model is used to recognize and process the diffraction pattern corresponding to the second diffraction signal on the detector plane to automatically determine whether the diffraction pattern has symmetry.

[0128] Exemplarily, whether the incident direction of the polychromatic X-rays is perpendicular to the filament axis direction of the sample to be determined in the current orientation of the sample to be determined can be judged based on whether the diffraction pattern corresponding to the second diffraction signal on the detector plane has symmetry, wherein if the diffraction pattern has symmetry, it can be determined that the incident direction of the polychromatic X-rays is perpendicular to the filament axis direction of the sample to be determined in the current orientation of the sample to be determined, and at this time, the orientation of the sample to be determined does not need to be adjusted; if the diffraction pattern does not have symmetry, it can be determined that the incident direction of the polychromatic X-rays is not perpendicular to the filament axis direction of the sample to be determined in the current orientation of the sample to be determined, and at this time, the orientation of the sample to be determined needs to be adjusted, i.e. in the case that the filament axis direction of the sample to be determined is not perpendicular to the incident direction of the polychromatic X-rays, the orientation of the sample to be determined is adjusted, wherein the filament axis direction of the sample to be determined changes with the change of the orientation of the sample to be determined. For example, the orientation of the sample to be determined can be adjusted according to a preset angle interval and direction, and after being adjusted to a new orientation, the operations of controlling the polychromatic X-rays to irradiate the sample to be determined and the subsequent operations are repeated, i.e. the polychromatic X-rays continue to irradiate the sample to be determined to generate a new second diffraction signal, and the new second diffraction signal is processed until it is determined that the diffraction pattern corresponding to the new second diffraction signal on the detector plane has symmetry, and then it can be determined that the incident direction of the polychromatic X-rays is perpendicular to the filament axis direction of the sample to be determined in the current orientation of the sample to be determined, and at this time, the adjustment of the orientation of the sample to be determined can be stopped, thereby ensuring that the polychromatic X-rays irradiate the sample to be determined perpendicularly to the filament axis direction of the sample to be determined.

[0129] In a possible implementation, the method further includes: controlling the position of the sample to be tested so that the polychromatic X-rays are irradiated on a preset position of the sample to be tested. For example, the sample to be tested can be placed on a motorized sample stage, and the position of the sample to be tested is adjusted by controlling the rotation of the motorized sample stage. In this way, the position of the sample to be tested is adjusted, so that the polychromatic X-rays are irradiated on different regions of the sample to be tested, thereby meeting different requirements.

[0130] In a possible implementation, the method further includes: controlling the shape and / or size of the region on which the polychromatic X-rays are irradiated on the sample to be tested. For example, an X-ray collimator can be configured, and the shape and size of the cross section of the polychromatic X-rays irradiated on the sample to be tested, that is, the shape and size of the region on which the polychromatic X-rays are irradiated on the sample to be tested, can be adjusted by adjusting the opening shape and size of the X-ray collimator. In this way, the shape and size of the region on which the polychromatic X-rays are irradiated on the sample to be tested are changed, thereby meeting different requirements.

[0131] Step 302: acquiring a first diffraction signal generated after the polychromatic X-rays are irradiated on the sample to be tested.

[0132] In this step, the diffraction signal generated by the sample to be tested, that is, the first diffraction signal, is acquired in the case that the polychromatic X-rays are irradiated on the sample to be tested in the direction perpendicular to the wire axis of the sample to be tested.

[0133] For example, the first diffraction signal can be received by a detector placed perpendicularly to the incident direction of the polychromatic X-rays. The first diffraction signal can include the position of each diffraction spot formed on the plane of the detector, the intensity of each diffraction spot, and the diffraction angle and other information of the diffraction line generated after the polychromatic X-rays are irradiated on the sample to be tested and then reaches the detector.

[0134] Step 303: processing the first diffraction signal to obtain the wire texture information inside the sample to be tested.

[0135] The wire texture information inside the sample to be tested includes: the crystal plane density corresponding to the angle between the normal vector of at least one crystal plane in the sample to be tested and the wire axis direction of the sample to be tested when the angle is taken at least one angle, wherein the crystal plane density represents the number of corresponding crystal planes within a unit angle.

[0136] The angle between the normal vector of the at least one crystal face and the filament axis direction of the sample to be measured can correspond to the crystal face density of the sample to be measured when the angle is taken at different angles. It can be understood that, for any crystal face, since the crystal face represents a parallel crystal face family, the number of crystal faces included in the parallel crystal face family is multiple, wherein the angle between the normal vector of each crystal face in the parallel crystal face family and the filament axis direction of the sample to be measured fluctuates within a certain angle range, that is, the number of crystal faces corresponding to different angles within the angle range can be different; wherein the angle range can be pre-set or can be an empirical value.

[0137] Exemplarily, the number of crystal faces included in the at least one crystal face and the number of angles included in the at least one angle can be set according to requirements; for example, the at least one crystal face can include any crystal face in the unit cell of the sample to be measured, and the at least one angle can include all angles within a pre-set angle range.

[0138] The crystal face density corresponding to the first angle between the normal vector of the first crystal face and the filament axis direction of the sample to be measured is determined by the first angle, the crystal face spacing corresponding to the first crystal face, and the first diffraction signal; the first angle is any angle in the at least one angle, and the first crystal face is any crystal face in the at least one crystal face.

[0139] Since when the polychromatic X-rays are vertically incident on the sample to be measured in the filament axis direction of the sample to be measured, the scenario shown in FIG. 1 is met; exemplarily, based on the foregoing derivation, the first diffraction signal generated by the sample to be measured can be analyzed and processed, so that the crystal face density corresponding to the at least one angle between the normal vector of the at least one crystal face in the sample to be measured and the filament axis direction of the sample to be measured can be obtained.

[0140] In a possible implementation, the processing of the first diffraction signal in this step to obtain the filament texture information inside the sample to be measured includes: processing the first diffraction signal to determine the position of the first diffraction spot corresponding to the first crystal face, wherein the first diffraction spot is any diffraction spot formed by the diffraction signal generated by the first crystal face in the first diffraction signal on the detector plane; obtaining the crystal face spacing corresponding to the first crystal face; based on the crystal face spacing corresponding to the first crystal face and the position of the first diffraction spot, determining the first wavelength corresponding to the first diffraction spot, wherein the first wavelength is the wavelength corresponding to the X-ray generating the first diffraction spot in the polychromatic X-rays; based on the first wavelength, the first angle, the crystal face spacing corresponding to the first crystal face, and the first diffraction signal, the crystal face density corresponding to the first angle between the normal vector of the first crystal face and the filament axis direction of the sample to be measured is determined.

[0141] Exemplarily, before the determination of the sample to be measured, the crystal information of a plurality of substances can be obtained in advance; in this way, in the case that the sample to be measured is known (for example, the molecular formula of the sample to be measured is known), the crystal information of the sample to be measured can be determined, which can include: the molecular formula of the sample to be measured, the crystal system (for example, tetragonal, hexagonal, etc.) corresponding to the sample to be measured; the cell parameters: 3 sets of edge lengths (that is, the axis lengths of the crystal) a, b, c and 3 sets of angles between edges (that is, the axis angles of the crystal) α, β, γ; in the powder diffraction experiment, the interplanar spacing corresponding to each crystal face (which can be represented by a crystal face index) in the sample to be measured, the diffraction angle of each crystal face and the relative intensity corresponding to each crystal face (that is, the relative intensity between the diffraction spots formed by different crystal faces on the detector plane). Among them, the crystal information of a plurality of substances can be obtained through the existing public database, or the crystal information of different substances can be measured through the existing technology (such as X-ray diffraction) in advance.

[0142] Exemplarily, the first diffraction signal is processed to determine the position of the first diffraction spot corresponding to the first crystal face, which can include: by comparing and analyzing the intensity of each diffraction spot formed on the detector plane, and combining the crystal information corresponding to the sample to be measured (such as the relative intensity corresponding to each crystal face), the crystal face (which can be represented by a crystal face index) corresponding to each diffraction spot is determined. Based on the above reasoning, the diffraction spots formed by the diffraction signal generated by each crystal face on the detector plane form a "petal", so the crystal face corresponding to each "petal" can be determined. Exemplarily, existing machine learning technology can also be used to compare and analyze the first diffraction signal to determine the crystal face corresponding to each "petal". Taking any crystal face as the first crystal face, the "petal" corresponding to the first crystal face can be determined, and taking any diffraction spot in the "petal" as the first diffraction spot, since the first diffraction signal contains the position information of each diffraction spot, the position of the first diffraction spot corresponding to the first crystal face can be determined. Among them, the position of the first diffraction spot can be the position of the first diffraction spot in a three-dimensional space, exemplarily, the x direction of the three-dimensional space is the filament axis direction of the sample to be measured, the z direction is the incident direction of the polychromatic X-ray, and the coordinate origin is the mass point of the sample to be measured.

[0143] Exemplarily, the interplanar spacing corresponding to the first crystal face can be determined in combination with the crystal information corresponding to the sample to be measured; the crystal information corresponding to the sample to be measured includes the interplanar spacing corresponding to each crystal face, since the above has determined each crystal face (different crystal faces can be represented by different crystal face indexes), for the first crystal face, the interplanar spacing corresponding to the first crystal face can be determined.

[0144] Exemplarily, based on the interplanar spacing corresponding to the first crystal face and the position of the first diffraction spot, the first wavelength corresponding to the first diffraction spot can be determined, which can include: assuming that the position of the first diffraction spot is x d , yd , z d , wherein z d is the distance D between the detector plane and the sample to be measured; the interplanar spacing corresponding to the first crystal face is d, the interplanar spacing corresponding to the first crystal face is d and the position of the first diffraction spot is x d , y d , z d is substituted into the above formula (14), the first wavelength λ corresponding to the first diffraction spot can be obtained.

[0145] In a possible implementation, the determining, based on the first wavelength, the first angle, the interplanar spacing corresponding to the first crystal face, and the first diffraction signal, of the interfacial density of the normal vector of the first crystal face and the fiber axis direction of the sample to be measured at the first angle, includes: processing the first diffraction signal to determine a diffraction signal corresponding to the first wavelength; determining a diffraction intensity density corresponding to a first polar angle based on the diffraction signal corresponding to the first wavelength, wherein the diffraction intensity density represents the intensity of a diffraction spot corresponding to a unit polar angle in the detector plane; the first polar angle is determined by the first wavelength, the first angle, and the interplanar spacing corresponding to the first crystal face; and determining the interfacial density of the normal vector of the first crystal face and the fiber axis direction of the sample to be measured at the first angle based on the first wavelength, the interplanar spacing corresponding to the first crystal face, the first angle, and the diffraction intensity density corresponding to the first polar angle.

[0146] Since the incident X-rays to the sample to be measured are polychromatic X-rays, the polychromatic X-rays have multiple wavelengths, and thus the first diffraction signal includes diffraction signals corresponding to the multiple wavelengths. By processing the first diffraction signal, the diffraction signal corresponding to the first wavelength can be determined. Based on the foregoing derivation, for the same crystal face of the sample to be measured, the diffraction signal received by the detector forms a diffraction spot on a circular ring on the detector plane when monochromatic X-rays of a certain wavelength λ are incident, that is, the diffraction spot formed by the diffraction signal corresponding to the first wavelength on the detector plane is on a circular ring. For example, processing the first diffraction signal to determine the diffraction signal corresponding to the first wavelength can include: determining, based on the positions of the diffraction spots, diffraction spots located on the same circular ring as the first diffraction spot, so as to filter, from the first diffraction signal, diffraction signals forming the diffraction spots on the circular ring, that is, the diffraction signal corresponding to the first wavelength.

[0147] Exemplarily, determining the diffraction intensity density corresponding to the first polar angle based on the diffraction signal corresponding to the first wavelength can include: processing the diffraction signal corresponding to the first wavelength to determine a diffraction intensity density distribution on the detector plane, the diffraction intensity density distribution representing diffraction intensity densities corresponding to different polar angles, for example, the diffraction intensity density distribution can be determined by the above formula (21). Then, the first polar angle is determined according to the first wavelength, the first angle, and the interplanar spacing corresponding to the first crystal face; since the angle between the normal vector of the crystal face in the three-dimensional space and the filament axis direction of the sample to be measured is equal to the angle between the reciprocal vector corresponding to the crystal face and the filament axis of the sample to be measured, the above formula (17) represents the corresponding relationship between the angle between the normal vector of the crystal face in the three-dimensional space and the filament axis direction of the sample to be measured, the interplanar spacing, the wavelength of the X-ray, and the polar angle in the detector plane; then the first wavelength λ, the first angle θ, and the interplanar spacing d corresponding to the first crystal face are brought into the above formula (17), and the first polar angle is obtained. Further, determining the diffraction intensity density corresponding to the first polar angle based on the first polar angle and the diffraction intensity density distribution on the detector plane can include: substituting the first polar angle into formula (21) to obtain the diffraction intensity density corresponding to the first polar angle

[0148] Exemplarily, determining the crystal face density corresponding to the angle of the first crystal face normal vector and the filament axis direction of the sample to be measured when the first angle is taken based on the diffraction intensity density corresponding to the first wavelength, the interplanar spacing corresponding to the first crystal face, the first angle, and the first polar angle can include: substituting the first wavelength λ, the interplanar spacing d corresponding to the first crystal face, the first angle θ, and the diffraction intensity density corresponding to the first polar angle into the above formula (25) and (24), and the crystal face density ρ hkl,相对 corresponding to the angle of the first crystal face normal vector and the filament axis direction of the sample to be measured when the first angle θ is taken is obtained; in this way, for a plurality of angles, the crystal face density corresponding to the angle of the first crystal face normal vector and the filament axis direction of the sample to be measured when the plurality of angles are taken can be obtained, and thus the crystal face density distribution of the sample to be measured is obtained.

[0149] As an example, in the process of processing the first diffraction signal and determining the position of the first diffraction spot corresponding to the first crystal face, a plurality of diffraction spots can be selected from the diffraction spots formed by the diffraction signal generated by the first crystal face on the detector plane, wherein each selected diffraction spot is located on a different circular ring of the diffraction pattern (i.e., the diffraction spot formed by the diffraction signal corresponding to a different wavelength on the detector plane is selected each time). In this way, the selected diffraction spot each time is taken as the first diffraction spot, and the above operation is performed. Each operation can obtain the crystal face density corresponding to the angle of the normal vector of the first crystal face and the fiber axis direction of the sample when the first angle is taken. In this way, the crystal face densities corresponding to the angle of the normal vector of the first crystal face and the fiber axis direction of the sample when the first angle is taken obtained multiple times can be averaged to obtain the final crystal face density corresponding to the angle of the normal vector of the first crystal face and the fiber axis direction of the sample when the first angle is taken. This can increase the accuracy of the crystal face density distribution of the sample to be measured.

[0150] In addition, since the crystal face densities corresponding to the angle of the normal vector of all crystal faces of the same unit cell of the sample to be measured and the fiber axis direction of the sample to be measured when the plurality of angles are taken are the same, only one crystal face of the sample to be measured can be calculated, or a plurality of crystal faces can be calculated and averaged to obtain the crystal face density distribution of the sample to be measured, i.e., the fiber texture information inside the sample to be measured.

[0151] In the embodiment of the present disclosure, the orientation of the sample to be measured is controlled so that the polychromatic X-rays are irradiated on the sample to be measured perpendicularly to the fiber axis direction of the sample to be measured; a first diffraction signal generated after the polychromatic X-rays are irradiated on the sample to be measured is acquired; and the first diffraction signal is processed to obtain the fiber texture information inside the sample to be measured. The fiber texture information inside the sample to be measured includes: the crystal plane density corresponding to the angle at which the included angle between the normal vector of at least one crystal plane in the sample to be measured and the fiber axis direction of the sample to be measured is taken; and the crystal plane density corresponding to the first angle at which the included angle between the normal vector of the first crystal plane and the fiber axis direction of the sample to be measured is taken, which is determined by the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal. Thus, by using the ray diffraction technology, the polychromatic X-ray source in the laboratory is used without using the X-ray monochromator, so that the fiber texture inside the sample to be measured can be quickly and quantitatively detected under the condition of polychromatic X-rays. The use of the polychromatic X-ray source in the laboratory breaks the dependence on the strong light source such as the synchrotron and the X-ray monochromator. At the same time, the direction of the fiber axis of the sample to be measured can be automatically determined and the orientation of the sample to be measured can be adjusted to ensure that the polychromatic X-rays are incident on the sample to be measured perpendicularly to the fiber axis direction; the internal fiber texture of the polycrystalline fiber texture sample can be quantitatively determined, and the shape of the sample to be measured is not limited, breaking the limitation that the conventional X-ray diffractometer can only measure the surface information of the sample; the fiber texture of the sample to be measured can be quickly determined, and the conventional X-ray diffraction goniometer needs to be scanned angle by angle, which is a slow process.

[0152] The polychromatic X-ray source diffraction-based fiber texture measurement system provided in the embodiment of the present disclosure will be described in detail below.

[0153] FIG. 4 shows a structural schematic diagram of a polychromatic X-ray source diffraction-based fiber texture measurement system according to an embodiment of the present disclosure. As shown in FIG. 4, the system can include: an X-ray source 1, an electric X-ray collimation device 2, an electric sample stage 3, an X-ray transmission blocker 4, a detector 5, and a control device 6. The X-ray source 1 is configured to generate polychromatic cone beam X-rays. The X-ray collimation device 2 is configured to convert the polychromatic cone beam X-rays into polychromatic pencil beam X-rays. The electric sample stage 3 is configured to place a sample to be measured and adjust the position and / or orientation of the sample to be measured. The X-ray transmission blocker 4 is configured to block the X-rays transmitted after the polychromatic pencil beam X-rays are irradiated on the sample to be measured. The detector 5 is configured to receive a diffraction signal generated after the polychromatic pencil beam X-rays are irradiated on the sample to be measured. The control device 6 is connected to the X-ray source 1, the X-ray collimation device 2, the electric sample stage 3, and the detector 5, and is configured to perform the polychromatic X-ray source diffraction-based fiber texture measurement method shown in FIG. 3.

[0154] Exemplarily, as shown in FIG. 4, the X-ray source 1, the motorized X-ray collimator 2, the motorized sample stage 3, the X-ray transmission blocker 4, and the detector 5 are arranged in sequence along the Y-axis direction; and exemplarily, the optical path center of the X-ray source 1, the center of the motorized X-ray collimator 2, the centroid of the sample to be measured in the motorized sample stage 3, the center of the X-ray transmission blocker 4, and the center of the detector 5 are located on the same straight line.

[0155] In the method for measuring the filament texture based on the polychromatic X-ray source diffraction shown in FIG. 3, the software can be integrated into the control device 6 to automatically process the data, so as to quickly obtain the measurement result of the sample to be measured by the user.

[0156] In the embodiment of the present disclosure, the control device 6 can control the orientation of the sample to be measured, for example, the orientation of the sample to be measured can be controlled by the motorized sample stage 3, so that the polychromatic X-ray is irradiated to the sample to be measured perpendicularly to the filament axis direction of the sample to be measured; the control device 6 can acquire the first diffraction signal generated after the polychromatic X-ray is irradiated to the sample to be measured; and the control device 6 can process the first diffraction signal to obtain the filament texture information inside the sample to be measured, wherein the filament texture information inside the sample to be measured includes: the crystal plane density corresponding to the angle when the included angle between the normal vector of at least one crystal plane in the sample to be measured and the filament axis direction of the sample to be measured is taken at least one angle, and the crystal plane density corresponding to the first angle when the included angle between the normal vector of the first crystal plane and the filament axis direction of the sample to be measured is taken at the first angle is determined by the first angle, the interplanar spacing corresponding to the first crystal plane, and the first diffraction signal; the first angle is any angle in the at least one angle, and the first crystal plane is any crystal plane in the at least one crystal plane. Thus, by using the ray diffraction technology and the conventional polychromatic X-ray source in the laboratory, the filament texture inside the sample to be measured can be quickly and quantitatively detected without using the X-ray monochromator under the polychromatic X-ray condition.

[0157] In actual detection, the controller of the filament texture measurement system based on the polychromatic X-ray source diffraction can be used to start the filament texture measurement system based on the polychromatic X-ray source diffraction. After the user selects the crystal information and the measurement parameters of the sample to be measured, the filament texture measurement system based on the polychromatic X-ray source diffraction can emit polychromatic X-ray to irradiate the sample to be measured, collect the diffraction signal generated by the sample to be measured, and directly process the collected diffraction signal. In this way, the filament texture inside the sample can be quickly and quantitatively measured under the conventional polychromatic X-ray condition in the laboratory.

[0158] Exemplarily, before actual detection, crystal information of various substances needs to be collected in advance as a built-in database of the system; after obtaining the diffraction signal of the sample to be detected, the diffraction signal needs to be analyzed and processed by using the data in the database to obtain the final result. Exemplarily, the crystal information includes the molecular formula of the substance, the crystal system corresponding to the substance (such as tetragonal, hexagonal, etc.), the cell parameters: 3 sets of edge lengths (i.e., the axis lengths of the crystal) a, b, c and 3 sets of angles between edges (i.e., the axis angles of the crystal) α, β, γ; in the powder diffraction experiment, the interplanar spacing, diffraction angle and corresponding relative intensity (i.e., the relative intensity between different diffraction lines) of each crystal face, etc.

[0159] Exemplarily, the X-ray source 1 can be a conventional X-ray source, which can emit a polychromatic cone beam of X-rays. In addition to laboratory light sources, other polychromatic light sources such as synchrotron radiation are still applicable. The control device 6 can control the X-ray source 1 to generate a polychromatic X-ray and irradiate the sample to be detected.

[0160] Exemplarily, the X-ray collimation device 2 can be an electric X-ray collimator. The electric X-ray collimator can convert the polychromatic cone beam of X-rays generated by the X-ray source 1 into a polychromatic pencil beam of X-rays, and irradiate the polychromatic pencil beam of X-rays on the sample to be detected. In the actual detection process, the user can set parameters to change the opening shape and size of the X-ray collimator, so as to change the shape and size of the cross section of the outgoing polychromatic pencil beam of X-rays, and further change the shape and size of the irradiation area of the sample to be detected.

[0161] Exemplarily, the electric sample stage 3 can have one or more degrees of freedom to move the sample to be detected placed thereon, for example, the sample to be detected can be placed on the electric sample stage to realize displacement in three perpendicular directions and change of orientation in 4π solid angle in space. As an example, the sample to be detected is moved according to the parameters set by the user, so that the polychromatic X-rays can irradiate different areas of the sample to be detected according to the user's needs; as another example, the electric sample stage 3 can also change the orientation of the sample to be detected, so that the polychromatic X-rays are incident on the sample to be detected perpendicular to the direction of the filament axis of the sample to be detected. The control device 6 can control the electric sample stage 3 to control the orientation of the sample to be detected.

[0162] Figure 5 shows a structural schematic diagram of the electric sample stage 3 according to an embodiment of the present disclosure. As shown in Figure 5, the electric sample stage 3 can include: a device base 3-1, a three-axis displacement stage 3-2, a fixed ring fixing support 3-3, a fixed ring and movable ring driving device 3-4, a movable ring 3-5, and a sample rotating stage 3-6. In the electric sample stage 3, the three-axis displacement stage is installed on the device base 3-1, and can drive the fixed ring fixing support 3-3 and the above components to realize axial movement in three perpendicular directions, which are the x direction, the y direction, and the z direction (the coordinate system and the numerical value downward direction are marked in Figure 5); the fixed ring and movable ring driving device 3-4 is installed on the fixed ring fixing support 3-3; the movable ring 3-5 is installed inside the fixed ring coaxially; the fixed ring and movable ring driving device 3-4 can electrically drive the movable ring 3-5 to rotate in the "rotation direction one" in the figure; the sample rotating stage 3-6 is installed inside the movable ring 3-5, and a sample to be measured can be fixed thereon and driven to rotate in the "rotation direction two" in Figure 5; the "rotation direction one" and the "rotation direction two" can realize the orientation of the sample to be measured to change arbitrarily in a 4π solid angle in space, and ensure that the sample to be measured is always at the center of the movable ring 3-5. The three-axis displacement stage 3-2, the fixed ring and movable ring driving device 3-4, and the sample rotating stage 3-6 in the electric sample stage 3 are controlled and powered by the control device 6, so as to realize the position change and orientation change of the sample to be measured.

[0163] Exemplarily, the detector 5 can be a planar array detector. The planar direction of the planar array detector is perpendicular to the incident direction of the polychromatic X-rays; the polychromatic pencil beam X-rays irradiate on the sample to be measured, and the diffraction signals generated by the sample to be measured are received by the planar array detector. Exemplarily, the received diffraction signals can form diffraction spots on the detector plane, and the diffraction spots constitute a diffraction pattern. The control device 6 can acquire the diffraction signals received by the detector 5.

[0164] Exemplarily, the control device 6 can also be referred to as a control and power supply integrated device, which is connected with the X-ray source 1, the X-ray collimator 2, the electric sample stage 3, and the detector 5 respectively, and is used for controlling and powering the X-ray source 1, the X-ray collimator 2, the electric sample stage 3, and the detector 5. As shown in Figure 4, the propagation direction of the X-rays, the above-mentioned X-ray source 1, X-ray collimator 2, electric sample stage 3, and detector 5 are sequentially placed along the propagation direction of the X-rays.

[0165] In a possible implementation, as shown in FIG. 4, the system can further include a touch display 7, a radiation shielding device 8, wherein, except for the control device 6 and the touch display 7, other parts of the system are installed in the radiation shielding device 8 and in the relative positions in FIG. 4, so as to avoid ionizing radiation injury to the operator caused by X-ray leakage. The control device 6 is matched with the touch display 7, and the user can set parameters and requirements by using the touch display 7; the touch display 7 can also display the real-time state and parameters of the system and display the silk texture measurement result of the sample to be measured.

[0166] For example, the user starts the power supply of the silk texture measurement system based on polychromatic X-ray source diffraction, fixes the sample to be measured on the motorized sample stage 3 in the silk texture measurement system based on polychromatic X-ray source diffraction, and the motorized sample stage 3 can be translated along three mutually perpendicular axes and can be rotated in a 4π solid angle in space, so as to control the translation and orientation change of the sample to be measured; then the crystal information corresponding to the sample to be measured in the device database is selected on the touch display 7 of the silk texture measurement system based on polychromatic X-ray source diffraction, and the detection parameters and other information are set. The control device 6 controls the motorized X-ray collimator 2 according to the detection parameters set by the user, so that the polychromatic cone beam X-ray emitted from the X-ray source 1 is a polychromatic pencil beam X-ray with the cross-sectional shape and size required by the user. Subsequently, the polychromatic pencil beam X-ray is irradiated on the sample to be measured, and the second diffraction signal generated by the sample to be measured is received by the area array detector 5, the control device 6 acquires the diffraction signal received by the area array detector 5, and according to the second diffraction signal, the orientation of the sample to be measured is recognized by using the machine learning algorithm, and the motorized sample stage 3 is controlled to work, so as to change the orientation of the sample to be measured, so that the polychromatic pencil beam X-ray is perpendicular to the silk axis direction of the sample to be measured. Further, the control device 6 can control the motorized sample stage 3 to change the position of the sample to be measured according to the parameters set by the user, so that the polychromatic pencil beam X-ray is irradiated on a specific region of the sample to be measured. The area array detector 5 collects the first diffraction signal at this time, combines the crystal information corresponding to the sample to be measured selected by the user, and analyzes the data by using the built-in algorithm, and can further output the final detailed result on the touch display 7. In addition, the user can set different measurement parameters, and the control device 6 can change the ray and the position of the sample to be measured according to these parameters, repeat the above measurement work and output the result, without data post-processing; all processing results can be displayed on the touch display 7, or can be exported to a mobile storage device or other devices.

[0167] Based on the same inventive concept of the above-mentioned method embodiments, the embodiments of the present disclosure also provide a silk texture measurement device based on polychromatic X-ray source diffraction, which can be used to execute the technical solutions described in the above-mentioned silk texture measurement method embodiments based on polychromatic X-ray source diffraction.

[0168] FIG. 6 shows a structural schematic diagram of a filament texture determination device based on polychromatic X-ray diffraction according to an embodiment of the present disclosure. As shown in FIG. 6, the device can include: a control module 601 configured to control an orientation of a sample to be measured, so that polychromatic X-rays are incident on the sample to be measured perpendicularly to a filament axis direction of the sample to be measured; an acquisition module 602 configured to acquire a first diffraction signal generated after the polychromatic X-rays are incident on the sample to be measured; and a processing module 603 configured to process the first diffraction signal to obtain filament texture information inside the sample to be measured. The filament texture information inside the sample to be measured includes: a crystal plane density corresponding to a first angle when a normal vector of at least one crystal plane in the sample to be measured and the filament axis direction of the sample to be measured form the first angle, the crystal plane density being determined based on the first angle, a crystal plane spacing corresponding to a first crystal plane, and the first diffraction signal; and the first angle is any angle of at least one angle, and the first crystal plane is any crystal plane of the at least one crystal plane.

[0169] In a possible implementation, the control module 601 is further configured to: control the polychromatic X-rays to irradiate the sample to be measured to generate a second diffraction signal; process the second diffraction signal to determine a symmetry condition of a diffraction pattern corresponding to the second diffraction signal on a detector plane; determine, based on the symmetry condition of the diffraction pattern, whether the filament axis direction of the sample to be measured is perpendicular to an incident direction of the polychromatic X-rays; and in a case where the filament axis direction of the sample to be measured is not perpendicular to the incident direction of the polychromatic X-rays, adjust the orientation of the sample to be measured, and repeatedly perform the operations of controlling the polychromatic X-rays to irradiate the sample to be measured and the subsequent operations until the incident direction of the polychromatic X-rays is perpendicular to the filament axis direction of the sample to be measured, so that the polychromatic X-rays are incident on the sample to be measured perpendicularly to the filament axis direction of the sample to be measured.

[0170] In a possible implementation, the processing module 603 is further configured to: process the first diffraction signal to determine a position of a first diffraction spot corresponding to the first crystal face, where the first diffraction spot is any diffraction spot formed by the diffraction signal generated by the first crystal face in the first diffraction signal on a detector plane; obtain a crystal face spacing corresponding to the first crystal face; determine a first wavelength corresponding to the first diffraction spot based on the crystal face spacing corresponding to the first crystal face and the position of the first diffraction spot, where the first wavelength is a wavelength corresponding to the X-ray generating the first diffraction spot in the polychromatic X-ray; and determine the crystal face density corresponding to the angle of the normal vector of the first crystal face with respect to the fiber axis direction of the sample under test when the first angle is taken based on the first wavelength, the first angle, the crystal face spacing corresponding to the first crystal face, and the first diffraction signal.

[0171] In a possible implementation, the processing module 603 is further configured to: process the first diffraction signal to determine a diffraction signal corresponding to the first wavelength; determine a diffraction intensity density corresponding to a first polar angle based on the diffraction signal corresponding to the first wavelength, where the diffraction intensity density represents the intensity of the diffraction spot corresponding to a unit polar angle in the detector plane; and determine the crystal face density corresponding to the angle of the normal vector of the first crystal face with respect to the fiber axis direction of the sample under test when the first angle is taken based on the first wavelength, the crystal face spacing corresponding to the first crystal face, the first angle, and the diffraction intensity density corresponding to the first polar angle.

[0172] In a possible implementation, the control module 601 is further configured to: control the position of the sample under test to enable the polychromatic X-ray to irradiate a preset position of the sample under test; and / or control the shape and / or size of the region on which the polychromatic X-ray irradiates the sample under test.

[0173] In a possible implementation, the sample under test is a magnet with a polycrystalline fiber texture.

[0174] In some embodiments, the apparatus provided by the embodiments of the present disclosure has functions or includes modules that can be used to perform the methods described in the above method embodiments, and the specific implementation can be referred to the description of the above method embodiments. For brevity, details are not described here.

[0175] The embodiments of the present disclosure also provide a computer-readable storage medium having stored computer program instructions, and the computer program instructions are executed by a processor to implement the above method. The computer-readable storage medium can be a volatile or non-volatile computer-readable storage medium.

[0176] The embodiment of the present disclosure further provides an electronic device, comprising: a processor; a memory for storing processor-executable instructions; wherein the processor is configured to implement the above method when executing the instructions stored in the memory.

[0177] The embodiment of the present disclosure further provides a computer program product, comprising computer readable code, or a non-volatile computer readable storage medium carrying computer readable code, when the computer readable code is run in the processor of the electronic device, the processor in the electronic device executes the above method.

[0178] FIG. 7 shows a block diagram of an electronic device 1900 according to an embodiment of the present disclosure. For example, the electronic device 1900 can be provided as a server or a terminal device. Referring to FIG. 7, the electronic device 1900 includes a processing component 1922, which further includes one or more processors, and a memory resource represented by a memory 1932 for storing instructions executable by the processing component 1922, such as an application program. The application program stored in the memory 1932 can include one or more than one module each corresponding to a set of instructions. In addition, the processing component 1922 is configured to execute the instructions to perform the above method.

[0179] The electronic device 1900 can further include a power supply component 1926 configured to perform power management of the electronic device 1900, a wired or wireless network interface 1950 configured to connect the electronic device 1900 to a network, and an input / output interface 1958 (I / O interface). The electronic device 1900 can operate based on an operating system stored in the memory 1932, such as Windows Server TM , Mac OS X TM , Unix TM , Linux TM , FreeBSD TM or the like.

[0180] In an exemplary embodiment, a non-volatile computer readable storage medium, such as the memory 1932 including computer program instructions executable by the processing component 1922 of the electronic device 1900 to complete the above method, is also provided.

[0181] The present disclosure can be a system, a method, and / or a computer program product. The computer program product can include a computer readable storage medium (or media) having computer readable program instructions thereon for causing a processor to carry out aspects of the present disclosure.

[0182] Computer readable storage media can be tangible storage media which can retain and store instructions for use by an instruction execution device. Computer readable storage media can be, for example, but is not limited to, an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of the foregoing. More specific examples (a non-exhaustive list) of computer readable storage media include the following: a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a static random access memory (SRAM), a portable compact disc read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanically encoded device such as punch-cards or raised structures in a groove having instructions recorded thereon, and any suitable combination of the foregoing. A computer readable storage medium, as used herein, is not to be construed as being transitory signals per se, such as radio waves or other freely propagating electromagnetic waves, electromagnetic waves propagating through a waveguide or other transmission media (e.g., light pulses passing through a fiber-optic cable), or electrical signals transmitted through a wire.

[0183] Computer readable program instructions described herein can be downloaded to respective computing / processing devices from a computer readable storage medium or to an external computer or external storage device via a network, for example, the Internet, a local area network, a wide area network and / or a wireless network. The network can comprise copper transmission cables, optical transmission fibers, wireless transmission, routers, firewalls, switches, gateway computers and / or edge servers. A network adapter card or network interface in each computing / processing device receives computer readable program instructions from the network and forwards the computer readable program instructions for storage in a computer readable storage medium within the respective computing / processing device.

[0184] Computer readable program instructions for carrying out operations of the present disclosure can be assembler instructions, instruction-set-architecture (ISA) instructions, machine instructions, machine dependent instructions, microcode, firmware instructions, state-setting data, or either source code or object code written in any combination of one or more programming languages, including an object oriented programming language such as Smalltalk, C++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The computer readable program instructions can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider). In some embodiments, electronic circuitry including, for example, programmable logic circuitry, field-programmable gate array (FPGA), or programmable logic array (PLA) can execute the computer readable program instructions by utilizing state information of the computer readable program instructions to personalize the electronic circuitry, in order to perform aspects of the present disclosure.

[0185] The computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable apparatus or other device to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide processes for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0186] These computer readable program instructions can be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks. These computer readable program instructions can also be stored in a computer readable storage medium that can include random access memory (RAM), read only memory (ROM), electrically erasable programmable read only memory (EEPROM), flash memory or other data storage device. When the computer readable program instructions are loaded into the computer and other programmable data processing apparatus, a series of operational steps are implemented that provide processes such that the computer or other programmable apparatus provide processes for implementing the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0187] The computer readable program instructions can also be loaded onto a computer, other programmable data processing apparatus, or other device to cause a series of operational steps to be performed on the computer, other programmable data processing apparatus or other device to produce a computer implemented process such that the instructions which execute on the computer, other programmable data processing apparatus, or other device implement the functions / acts specified in the flowchart and / or block diagram block or blocks.

[0188] The flow diagrams and the block diagrams in the drawings are presented to illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flow diagrams and the block diagrams can represent a module, segment, or portion of instructions, which comprises one or more executable instructions for implementing the specified logic functions. In some alternative implementations, the functions noted in the blocks can occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks can sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and / or flow diagrams, and combinations thereof, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and

[0189] Embodiments of the present disclosure have been described above, and the description is intended to be illustrative of the embodiments and not restrictive. Many modifications and variations of the described embodiments are possible and are within the scope of the disclosure. The selection of terms is intended to best describe the principles of the embodiments, practical application, or technical improvements in the art, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A method for measuring a wire texture based on diffraction of a polychromatic X-ray source, characterized by, The method comprises: controlling the orientation of the sample to be tested so that the polychromatic X-rays are incident on the sample to be tested perpendicularly to the fiber axis direction of the sample to be tested; acquiring a first diffraction signal generated after the polychromatic X-rays are incident on the sample to be tested; processing the first diffraction signal to obtain the fiber texture information inside the sample to be tested; wherein the fiber texture information inside the sample to be tested comprises: the crystal plane density corresponding to the angle between the normal vector of at least one crystal plane in the sample to be tested and the fiber axis direction of the sample to be tested when the angle is taken at at least one angle, and the crystal plane density corresponding to the first angle between the normal vector of the first crystal plane and the fiber axis direction of the sample to be tested is determined by the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal; the first angle is any angle in the at least one angle, and the first crystal plane is any crystal plane in the at least one crystal plane.

2. The method of claim 1, wherein, The control of the orientation of the sample to be tested so that the polychromatic X-rays are incident on the sample to be tested perpendicularly to the fiber axis direction of the sample to be tested comprises: controlling the polychromatic X-rays to irradiate the sample to be tested to generate a second diffraction signal; processing the second diffraction signal to determine the symmetry of the diffraction pattern corresponding to the second diffraction signal on the detector plane; determining whether the fiber axis direction of the sample to be tested is perpendicular to the incident direction of the polychromatic X-rays according to the symmetry of the diffraction pattern; in the case where the fiber axis direction of the sample to be tested is not perpendicular to the incident direction of the polychromatic X-rays, adjusting the orientation of the sample to be tested, and repeatedly performing the operations of controlling the polychromatic X-rays to irradiate the sample to be tested and the subsequent operations until the incident direction of the polychromatic X-rays is perpendicular to the fiber axis direction of the sample to be tested, so that the polychromatic X-rays are incident on the sample to be tested perpendicularly to the fiber axis direction of the sample to be tested.

3. The method of claim 1, wherein, The processing of the first diffraction signal to obtain the fiber texture information inside the sample to be tested comprises: processing the first diffraction signal to determine the position of the first diffraction spot corresponding to the first crystal plane, wherein the first diffraction spot is any diffraction spot formed by the diffraction signal generated by the first crystal plane in the first diffraction signal on the detector plane; acquiring the crystal plane spacing corresponding to the first crystal plane; determining the first wavelength corresponding to the first diffraction spot based on the crystal plane spacing corresponding to the first crystal plane and the position of the first diffraction spot, wherein the first wavelength is the wavelength corresponding to the X-rays generating the first diffraction spot in the polychromatic X-rays; determining the crystal plane density corresponding to the first angle between the normal vector of the first crystal plane and the fiber axis direction of the sample to be tested based on the first wavelength, the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal.

4. The method of claim 3, wherein, The determination of the crystal plane density corresponding to the first angle between the normal vector of the first crystal plane and the fiber axis direction of the sample to be tested based on the first wavelength, the first angle, the crystal plane spacing corresponding to the first crystal plane, and the first diffraction signal comprises: processing the first diffraction signal to determine a diffraction signal corresponding to the first wavelength; determining a diffraction intensity density corresponding to a first polar angle based on the diffraction signal corresponding to the first wavelength, wherein the diffraction intensity density represents an intensity of a diffraction spot corresponding to a unit polar angle in a detector plane; the first polar angle is determined by the first wavelength, the first angle, and a lattice spacing corresponding to the first crystal face; determining a crystal density corresponding to the first angle of the normal vector of the first crystal face and the fiber axis direction of the sample based on the first wavelength, the lattice spacing corresponding to the first crystal face, the first angle, and the diffraction intensity density corresponding to the first polar angle.

5. The method of claim 1, wherein, The method further comprises: controlling a position of the sample to be measured so that the polychromatic X-rays are irradiated to a preset position of the sample to be measured; and / or, controlling a shape and / or size of an area on which the polychromatic X-rays are irradiated to the sample to be measured.

6. The method of claim 1, wherein, The sample to be measured is a magnet with a polycrystalline fiber texture.

7. A filament texture measuring device based on polychromatic X-ray source diffraction, characterized by, The device comprises: a control module configured to control an orientation of the sample to be measured so that the polychromatic X-rays are irradiated to the sample to be measured perpendicularly to a fiber axis direction of the sample to be measured; an acquisition module configured to acquire a first diffraction signal generated after the polychromatic X-rays are irradiated to the sample to be measured; a processing module configured to process the first diffraction signal to obtain fiber texture information inside the sample to be measured; wherein the fiber texture information inside the sample to be measured comprises a crystal density corresponding to an angle of a normal vector of at least one crystal face of the sample to be measured and a fiber axis direction of the sample to be measured when the angle is taken; a crystal density corresponding to a first angle of the normal vector of a first crystal face and the fiber axis direction of the sample to be measured is determined by the first angle, a lattice spacing corresponding to the first crystal face, and the first diffraction signal; the first angle is any angle of the at least one angle, and the first crystal face is any crystal face of the at least one crystal face.

8. A fiber texture measurement system based on polychromatic X-ray source diffraction, characterized by, The system comprises an X-ray source, an X-ray collimation device, a motorized sample stage, an X-ray transmission blocker, a detector, and a control device; wherein, the X-ray source is configured to generate polychromatic cone-beam X-rays; the X-ray collimation device is configured to convert the polychromatic cone-beam X-rays into polychromatic pencil-beam X-rays; the motorized sample stage is configured to place a sample to be measured and adjust a position and / or an orientation of the sample to be measured; the X-ray transmission blocker is configured to block X-rays transmitted after the polychromatic pencil-beam X-rays are irradiated to the sample to be measured; the detector is configured to receive a diffraction signal generated after the polychromatic pencil-beam X-rays are irradiated to the sample to be measured; the control device is connected to the X-ray source, the X-ray collimation device, the motorized sample stage, and the detector, and is configured to perform the method of any one of claims 1 to 6.

9. An electronic device, comprising: comprise: a processor; a memory for storing processor-executable instructions; wherein the processor is configured to implement the method of any one of claims 1 to 6 when executing the instructions stored in the memory.

10. A non-transitory computer readable storage medium having stored thereon computer program instructions, wherein, The computer program instructions, when executed by a processor, implement the method of any one of claims 1 to 6.

Images