Isolation wall and transfer chamber including the isolation wall

Abstract

A semiconductor substrate transport apparatus includes a vacuum chamber and an array of electromagnets. The vacuum chamber has a plurality of transport ports that are each adapted to connect to a respective processing chamber. The vacuum chamber has a top, side walls, and a bottom that defines a substantially level reference plane inside the vacuum chamber. The vacuum chamber being capable of being sealed from an external environment in vacuum. The array of electromagnets is connected to the vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane. The bottom is formed of a thin gauge metal sheet that bounds and seals the vacuum inside the vacuum chamber. The thin gauge metal sheet has an inner surface that forms the level reference plane inside the semiconductor transport vacuum chamber.

Description

Aty. Docket No. 390P017237-WO (PCT) / Br3241ISOLATION WALL AND TRANSFER CHAMBER INCLUDING THE ISOLATION WALLCROSS-REFERENCE TO RELATED APPLICATION(S)

[0001] This application is a non-provisional of and claims the benefit of United States provisional patent application number 63 / 689,374 filed on August 30, 2024, the disclosure of which is incorporated herein by reference in its entirety.BACKGROUND1. Field

[0002] The present disclosure generally relates to substrate processing apparatus, and more particularly, to structure of the substrate processing apparatus.2. Brief Description of Related Developments

[0003] An interior environment of transfer chambers, having levitated substrate handlers for transporting substrates, is generally isolated from a coil drive system, disposed outside the interior environment, that effects levitation of the substrate handlers. The isolation of the interior environment from the coil drive system is generally effected with an isolation wall that may deflect due to a pressure differential between the interior environment and the environment external to the interior environment. The isolation wall may interfere with magnetic field between the coil drive system and the substrate handlers. The isolation wall may become heated by the transmission of the magnetic field through the isolation wall.

[0004] Accordingly, the present disclosure addresses a number of those issues.Aty. Docket No. 390P017237-WO (PCT) / Br3241BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The foregoing aspects and other features of the present disclosure are explained in the following description, taken in connection with the accompanying drawings, wherein:

[0006] Fig. 1 is a schematic cross sectional illustration of a substrate transfer chamber in accordance with the present disclosure;

[0007] Fig. 2A is an exemplary top perspective illustration of an isolation wall of the substrate transfer chamber of Fig. 1 in accordance with the present disclosure;

[0008] Fig. 2B is an exemplary “exploded” perspective illustration of the isolation wall of Fig. 2A in accordance with the present disclosure;

[0009] Fig. 2C is an exemplary bottom perspective illustration of the isolation wall of Fig. 2A in accordance with the present disclosure;

[0010] Fig. 3A is an exemplary side illustration of the isolation wall of Figs. 2A-2C coupling with a substrate transfer chamber frame in accordance with the present disclosure;

[0011] Fig. 3B is an exemplary side illustration of the isolation wall of Figs. 2A-2C coupling with a substrate transfer chamber frame in accordance with the present disclosure;

[0012] Fig. 4A is an exemplary top perspective cross-sectional illustration of an isolation wall of the substrate transfer chamber of Fig. 1 in accordance with the present disclosure;

[0013] Fig. 4B is an exemplary bottom perspective cross-sectional illustration of the isolation wall of Fig. 4A in accordance with the present disclosure;Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0014] Fig. 5 is an exemplary side cross-sectional illustration of the transfer chamber of Fig. 1 in accordance with the present disclosure;

[0015] Fig. 6 is an exemplary side cross-sectional illustration of the transfer chamber of Fig. 1 in accordance with the present disclosure;

[0016] Fig. 7 is an exemplary side cross-sectional illustration of the transfer chamber of Fig. 1 in accordance with the present disclosure;

[0017] Fig. 8 is an illustration of an exemplary substrate processing apparatus in accordance with the present disclosure; and

[0018] Figs. 9 and 10 are exemplary flow diagrams of methods in accordance with the present disclosure.DETAILED DESCRIPTION

[0019] The following detailed description is meant to assist the understanding of one skilled in the art, and is not intended in any way to unduly limit claims connected or related to the present disclosure.

[0020] The following detailed description references various figures, where like reference numbers refer to like components and features across various figures, whether specific figures are referenced, or not.

[0021] The word “each” as used herein refers to a single object (i.e., the object) in the case of a single object or each object in the case of multiple objects. The words “a,” “an,” and “the” as used herein are inclusive of “at least one” and “one or more” so as not to limit the object being referred to as being in its “singular” form.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0022] Spatial terms such as “left,” “right,” “top,” “bottom,” “upper,” “lower,” “front,” “back,” “vertical,” and “horizontal” as may be used herein are by way of example and illustration only are not meant to limit the description and may be exchanged in position and orientation.

[0023] The terms “substantially” and “about” as may be used herein refer to a feature that may be varied within an acceptable manufacturing tolerance for a given application.

[0024] Fig. 1 illustrates an exemplary semiconductor substrate transport vacuum chamber 100 (also referred to herein as a substrate transport chamber for convenience) in accordance with the present disclosure. Although the present disclosure will be described with reference to the drawings, it should be understood that the present disclosure can be embodied in many forms. In addition, any suitable size, shape or type of elements or materials could be used.

[0025] Referring also to Fig. 8, the substrate transport chamber 100 may be employed within any suitable semiconductor substrate transport apparatus 800 (referred to herein as a substrate or workpiece processing apparatus for convenience). The workpiece processing apparatus 800 may be configured to process any suitable workpieces W that may be transported to and from the workpiece processing apparatus 800 in containers or carriers 810. The workpieces W may be semiconductor wafer, flat panels for flat panel displays, solar panels, reticles, etch rings, consumables, metrology wafers, receptors (e.g., photo-resist), or any other suitable object.

[0026] As will be described herein, referring to Figs. 1-4B and 8, the workpiece processing apparatus 800 includes the semiconductor substrate transport vacuum chamber 100 and an array of electromagnets or coils 102CE (see Figs. 1, 4A-4B). The semiconductor substrate transport vacuum chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The semiconductor substrate transport vacuum chamber 100 has a top 100T, side walls 100SW, and a bottom 100B that defines a substantially level reference plane RP inside the semiconductor transport vacuum chamber 100, and the semiconductor transport vacuum chamber 100 is capable of being sealed from an externalAty. Docket No. 390P017237-WO (PCT) / Br3241 environment EXT (e.g., external to an interior of the semiconductor transport vacuum chamber 100) in vacuum VAC.

[0027] The array of electromagnets or coils 102CE is connected to the semiconductor transport vacuum chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level reference plane RP. The array of electromagnets or coils 102CE being arranged so that a series of electromagnets or coils of the array of electromagnets or coils 102CE define at least one drive line within the drive plane DP, and each of the electromagnets or coils 466 is coupled to a power source PS energizing each electromagnet or coil 466.

[0028] The bottom 100B is formed of a thin gauge metal sheet 210 (see also cupped pan 410 - Figs. 4A-4B) that bounds and seals the vacuum inside the semiconductor transport vacuum chamber 100. The thin gauge metal sheet 210 has an inner surface 210S that forms the level reference plane RP inside the semiconductor transport vacuum chamber 100.

[0029] As will also be described herein, the semiconductor substrate transport apparatus 800 may include one or more of, individually, in any suitable combination thereof, and / or in combination with any of the features described herein: the thin gauge metal sheet 210 has an outer surface 210T (see Figs. 2B-3B) opposite the inner surface 210S, where the outer surface 210T is exterior the vacuum of the semiconductor transport vacuum chamber 100 and is subjected to atmosphere; the thin gauge metal sheet 210 is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber 100 onto the bottom 100B, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet 210; the bottom 100B further includes a reinforcement member 200 backing the thin gauge metal sheet 210 and joined to the thin gauge metal sheet 210 via weld or braze joints so that the inner surface 210S of the thin gauge metal sheet 210 forms the substantially level reference plane RP; the reinforcement member 200 is ported, each port 300 extending through the reinforcement member 200 and being sized and shaped to position one of the electromagnets or coil 466 in the port 300 (see, e.g., Figs. 3A, 3BAty. Docket No. 390P017237-WO (PCT) / Br3241 and also 4A and 4B); each electromagnet or coil 466 of the array of electromagnets or coils 102CE is located in a corresponding port 300 and is surrounded by the corresponding port 300 so that each electromagnet or coil 466 is separated from each other electromagnet or coil 466 adjacent the electromagnet or coil 466 by the corresponding port 300; and the semiconductor transport vacuum chamber 100 has a mechanical contact seal 320 (see Figs. 3 A and 3B) between a side wall 100SW of the semiconductor transport vacuum chamber 100 and the thin gauge metal sheet 210 that seals the vacuum inside the semiconductor transport vacuum chamber 100; the thin gauge metal sheet 210 is formed as a cupped pan 410; the cupped pan 410 includes a base 410B and an array of protrusions 415 extending from one side of the base 410, each protrusion 415 being shaped and sized so as to be received within a respective port 300 of the reinforcement member 200; and the cupped pan 410 includes a base 410B and an array of protrusions 415 extending from one side of the base 410B, each protrusion 415 being shaped and sized so as to receive therein a respective electromagnet or coil 466 of the array of electromagnets or coils 102CE.

[0030] As will be described herein, referring to Figs. 1 and 5-8, the workpiece processing apparatus 800 includes the semiconductor substrate transport vacuum chamber 100 and an array of electromagnets or coils 102CE (see Figs. 1 and 5-7). The semiconductor substrate transport vacuum chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The semiconductor substrate transport vacuum chamber 100 has a top 100T, side walls 100SW, and a bottom 100B that defines a substantially level reference plane RP inside the semiconductor transport vacuum chamber 100, and the semiconductor transport vacuum chamber 100 is capable of being sealed from an external environment EXT (e.g., external to an interior of the semiconductor transport vacuum chamber 100) in vacuum VAC.

[0031] The array of electromagnets or coils 102CE is connected to the semiconductor transport vacuum chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level reference plane RP. The array of electromagnets or coils 102CE being arranged so that a series of electromagnets or coils of the array of electromagnets or coils 102CE define atAty. Docket No. 390P017237-WO (PCT) / Br3241 least one drive line within the drive plane DP, and each of the electromagnets or coil 466 is coupled to a power source PS energizing each electromagnet or coil 466.

[0032] The semiconductor transport vacuum chamber 100 has a closable cell ATMC, CATMC formed at least in the bottom 100B. The closable cell ATMC, CATMC being separate and distinct from (e.g., at least the interior of) the substrate transport vacuum chamber 100 and configured so that, the closable cell ATMC closed holds therein an isolated cell environment, of a controlled cell atmosphere or cell vacuum, from the external environment and the vacuum of the semiconductor transport vacuum chamber 100. The closable cell ATMC, CATMC is sized and shaped to enclose therein at least one pack module 102CM formed of a pack portion of the array of electromagnets or coils 102CE in the isolated cell environment.

[0033] As will also be described herein, the semiconductor substrate transport apparatus 800 may include one or more of, individually, in any suitable combination thereof, and / or in combination with any of the features described herein: the controlled cell atmosphere of the closable cell ATMC, CATMC is conditioned to maintain a predetermined substantially steady state temp and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil 466 of each of the at least one pack module 102CM of electromagnets or coils 466; the controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment; and the electromagnets or coil 466 of the at least one pack module 102CM may be sealed inside the vacuum of the isolated cell environment, with supporting electronics of the electromagnets or coils 466 exterior the isolated cell environment.

[0034] Still referring to Figs. 1 and 8, the workpiece processing apparatus 800 includes a front end 801 and a process section 820. The front end 801 generally includes a load port module 805 and a mini-environment 806 such as for example an equipment front-end module (EFEM). The load port module 805 may be box opener / loader to tool standard (BOLTS) interfaces that conform to SEMI standards E15.1, E47.1, E62, E19.5 or El.9 for 300 mm load ports, front opening or bottomAty. Docket No. 390P017237-WO (PCT) / Br3241 opening boxes / pods and cassettes. The load port modules may be configured as 200 mm wafer / substrate interfaces, 450 mm wafer / substrate interfaces or any other suitable substrate interfaces such as for example larger or smaller semiconductor wafers / substrates, flat panels for flat panel displays, solar panels, reticles or any other suitable object. Any suitable number of load ports modules 805 may be provided. The load port module 805 may be configured to receive the containers or carriers 810 from an overhead transport system, automatic guided vehicles, person guided vehicles, rail guided vehicles or from any other suitable transport method. The load port module 805 may interface with the mini-environment 806 through one or more load ports 807 of the load port module(s) 805. The load ports 807 may allow the passage of workpieces W between the containers 810 and the mini-environment 806.

[0035] The mini-environment 806 generally includes any suitable transport apparatus 808, such as any suitable automated transport robot for transporting workpieces W to and from the containers 810 through respective load ports 807. The transport apparatus 808 may be a track mounted robot such as that described in, for example, United States Patents 6,002,840 issued on December 14, 1999; 8,419,341 issued April 16, 2013; and 7,648,327 issued on January 19, 2010, the disclosures of which are incorporated by reference herein in their entireties, although the transport apparatus 808 may not be track mounted. The mini-environment 806 may provide a controlled, clean zone for substrate transfer between multiple load port modules.

[0036] The process section 820 may operate on the workpieces W through various deposition, etching, or other types of high vacuum processes to form electrical circuitry or other desired structure on the workpieces W. Typical processes include but are not limited to thin film processes that use a vacuum such as plasma etch or other etching processes, chemical vapor deposition (CVD), plasma vapor deposition (PVD), implantation such as ion implantation, metrology, rapid thermal processing (RTP), dry strip atomic layer deposition (ALD), oxidation / diffusion, forming of nitrides, vacuum lithography, epitaxy (EPI), wire bonder and evaporation or other thin film processes that use vacuum pressures. The process section 820 may include suitable transport apparatus and / or other automation for transporting and processing the workpieces W.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0037] The process section 820 includes one or more load locks 850 and a substrate transport chamber 100. The transport chamber 100 has an isolated environment therein and the load locks 850 are cycled between the isolated environment of the transfer chamber 100 and the environment of the mini-environment 806 for transferring workpieces W to and from the transport chamber 100; although the load locks 850 may be coupled directly to the interior of the container(s) 810, where an interior environment of the container(s) 810 is the same as the isolated environment to substantially reduce or eliminate cycling of the load lock 850 during workpiece W processing. The transfer chamber 100 may have an elongated substantially hexahedron shape with processing modules PM arrayed along one or more sides of the transfer chamber 100. Any suitable number of process modules PM may be coupled to the transfer chamber 100 through a corresponding number of sealable ports 100PRT (e.g., transport ports, see Figs. 4A and 5-7). Any suitable substrate transport apparatus 888 may be provided, at least partially, within the isolated environment of the transfer chamber 100 for transporting workpieces W between the process modules PM and the load locks 850 (or directly to the containers 810).

[0038] A controller 899 may be coupled to the workpiece processing apparatus 800 for effecting processing of workpieces W through the operation (e.g., under control of the controller 899) of at least the process modules PM and workpiece transport apparatus 808, 888.

[0039] Referring again to Fig. 1, the substrate transport chamber 100 may be employed to transport any suitable substrates or workpieces W including, but not limited to, semiconductor substrates, flat panels for flat panel displays, non-production workpieces, and reticles. The substrate transport chamber 100 includes an interior 101 having an interior environment and a drive section 102. The drive section 102 may form a part of the substrate transport apparatus 888 (see Fig. 8). The interior environment of the interior 101 may be any suitable isolated environment including, but not limited to, a vacuum environment, inert gas environment, and controlled air environment. The drive section 102 is a coil drive system 102C having an array of electromagnets or coils 102CE (the drive section may be any suitable drive section configured to levitate the one or more substrate handlers 110, e.g., by electrodynamic levitation, electromagnetic levitation, etc.). The coil driveAty. Docket No. 390P017237-WO (PCT) / Br3241 system 102CE is configured to levitate the one or more substrate handlers 110 within the interior 101, where the substrate handlers 110 effect transport of the substrates. The substrate handlers 110 may form a part of the substrate transport apparatus 888 (see Fig. 8).

[0040] The interior 101, and the interior environment thereof, is isolated from the coil drive system 102C by isolation wall 150. In accordance with the present disclosure, the isolation wall 150 may prevent excessive deflection due to any differential pressure loading that may exist between the interior environment of the interior 101 and the exterior (i.e., exterior to the interior 101) environment in which the coil drive system 102C is disposed. The isolation wall 150 may be constructed of any suitable non-magnetic material, including but not limited to stainless steel, so as not to interfere with the magnetic field produced by the coil drive system to levitate the substrate handlers 110. The isolation wall 150 may be constructed of a thermally conductive material, including but not limited to stainless steel and may allow for heat to dissipate from, for example, a side of the isolation wall 150 exposed to the interior environment of the interior 101 to the exterior environment exterior to the interior 101. The isolation wall 150, as described herein, includes a combination of materials that are structurally bonded and may yield mechanical, thermal, and magnetic properties to, one or more of prevent excessive deflection, effect thermal / heat dissipation, and effect non-magnetic properties as noted above.

[0041] Referring to Figs. 1 and 2A-2C, the isolation wall 150 is illustrated as isolation wall 150A. The isolation wall 150A is formed of a structural plate or base 200 (also referred to as reinforcement member) and a sheet 210 that is welded to or otherwise bonded / coupled (e.g., brazed, etc.) to the structural plate 200 in any suitable manner. The structural plate has a thickness T1 of about 15 mm, although the thickness T1 may be greater or less than about 15 mm. The structural plate 200 is formed of, for example, stainless steel or any other suitable non-magnetic material and is “skeletonized” or “ported” so that only material that is necessary for the function (e.g., at least the functions of substantially non-deflecting support of the sheet 110 and coupling to a frame 100F of the transfer chamber) of structural plate 200 remains. While the skeletonizing of the structural plate 200 is illustrated as being effected by removing (e.g., by any suitable machiningAty. Docket No. 390P017237-WO (PCT) / Br3241 operation) portions of material 222 from the structural plate 200 to form apertures or ports 300, where each of the portions of material 222 have a cylindrical shape, it should be understood that the removed portions of material 222 (and the apertures 300 formed from such removal) may have any suitable shape including but not limited to square, rectangular, octagonal, hexagonal, triangular, and ovoid. It should also be understood that, rather than machining, the structural plate 200 may be formed (in any suitable manner such as casting, forging, etc.) with the apertures 300 therein. The structural plate 200 may have a length LI and width W1 that spans at least the length and width of the interior 101 of the transfer chamber 100 although, the length LI and / or width W1 of the structural plate 200 may be less than a respective length and / or width of the interior 101 of the transfer chamber 100 where more than one structural plate 200 are employed side-by-side to span at least the length and width of the interior 101 of the transfer chamber 100.

[0042] The sheet 210 is a thin gauge metal sheet having a thickness T2 of about 1 mm, although the thickness T2 may be greater or less than about 1 mm. The sheet may have a length L2 and width W2 that is commensurate with the length LI and width W1 of the structural plate 200 so as to span at least the length and width of the of the interior 101 of the transfer chamber 100 (or at least the length LI and / or width W1 of a respective structural plate 200 where more than one structural plate are employed).

[0043] Referring also to Figs. 3A and 3B, the sheet 210 is coupled to the structural plate 200 in any suitable manner including, but not limited to, welding, brazing or bonding (generally referred to herein as coupling 250). For example, an entire perimeter edge PE of the sheet 210 may be coupled to the structural plate 200 by the coupling 250. The coupling 250 between the sheet 210 and structural plate 200 may be provided within the apertures 300, such as around a perimeter of the aperture 300 (see Fig. 2C). While the coupling 250 is illustrated s being provided in every other aperture 300, the coupling 250 between the sheet 210 and structural plate 200 may be provided in any suitable number of the apertures 300 so that the sheet 210 is sufficiently coupled to the structural plate 200 to substantially prevent excess deflection under differential loadingAty. Docket No. 390P017237-WO (PCT) / Br3241 caused by the pressure differential between the interior environment of the interior 101 and the exterior environment in which the coil drive system 102C (see Fig. 1) is disposed.

[0044] A perimeter edge PES of the structural plate 200 may include apertures 266 that effect coupling of the isolation wall 150A to the frame 100F of the transfer chamber 100. For example, a bolt or other mechanical fastener 310 may extend through a respective one of the apertures 266 and into the frame 100F for coupling the isolation wall 150A to the frame 100F (see Figs. 3A). Any suitable static seal 320 (also referred to herein as a mechanical contact seal), such as an Ciring or other vacuum compatible gasket material, may be disposed between the isolation wall 150A and the frame 100F to seal or otherwise isolate the interior environment of the interior 101. Fig. 3 A illustrates a configuration of the isolation wall 150A where the seal 320 engages the structural plate 200 while Fig. 3B illustrates a configuration of the isolation wall 150A where the seal 320 engages the sheet 210. The configuration of Fig. 3B sandwiches the sheet 210 between the frame 100F of the transfer chamber 100 and the structural plate 200 and may provide for isolation of the interior environment of the interior 101 without the coupling 250 of the sheet 210 to the structural plate 200 around the perimeter edge PE of the sheet 210 (see Fig. 3 A).

[0045] Referring to Figs. 4A and 4B, the isolation wall 150 is illustrated as isolation wall 150B. The isolation wall 150B includes the structural plate 200 (as described with respect to Figs. 2A- 3B) and the thin gauge metal sheet 210 in the form of at least one cupped pan 410. Each of the at least one cupped pan 410 includes a base 410B and an array of protrusions 415 extending from one side of the base 410. Each protrusion 415C forms a cup that is shaped and sized so as to be received within a respective aperture 300 of the structural plate 200.

[0046] The interior 415CD of the cup formed by the protrusion 415C may be shaped and sized to receive at least a portion of an electromagnet or coil 466 of the coil drive system 102C, although a portion of the coil 466 may not extend into the cup formed by the protrusion 415C. While each cupped pan 410 is illustrated as having a six-by-four array of protrusions formed therein 415C, the cupped pan 410 may be sized to have any suitable array of protrusions. The cupped pan 410 mayAty. Docket No. 390P017237-WO (PCT) / Br3241 be constructed of stainless steel or any other suitable non-magnetic material and formed in any suitable manner, such as pressing, hydroforming, etc.

[0047] The structural plate 200 includes at least one seal groove 470 configured to receive any suitable seal 475 such as an O-ring or other vacuum compatible gasket material. Each seal groove 470 corresponds to and is shaped so that the seal 475 therein extends around and engages a perimeter edge CPE of a corresponding / respective cupped pan 410 so as to seal the perimeter edge CPE against the structural plate 200. The structural plate 200 includes threaded apertures TA adjacent the seal groove 470, and the cupped pan 410 has corresponding apertures CA so that any suitable fasteners (such as screws, bolts, etc.) may extend through the apertures CA into the threaded apertures TA to couple and seal (via compressing of the seal 475) the cupped pan 410 to the structural plate 200.

[0048] The isolation wall 150B may be coupled to and sealed against the frame 100F of the transfer chamber 100 in a manner similar to that described above and illustrated in Figs. 3 A and 3B.

[0049] Referring to Figs. 1-4B and 5, the coil drive system 102C of the substrate transfer chamber 100 may be provided as one or more coil or pack modules 102CM that are each encapsulated in a respective atmospheric chamber or closable cell ATMC (e.g., the closable cell is sized and shaped to enclose therein at least one pack module 102CM formed of a pack portion of the array of electromagnets or coils 102CE in the isolated cell environment) formed in the frame 100F of the transfer chamber 100 (separate and distinct from the interior or inside vacuum environment of the transfer chamber 100) although, the closable cell ATMC may be formed in a body / frame that is separate and distinct from the frame 100F of the transfer chamber 100. Each atmospheric chamber ATMC is illustrated as encapsulating one coil module 102CM although more than one coil module 102CM may be encapsulated in a common atmospheric chamber ATMC. Each atmospheric chamber ATMC may include an isolation wall 150, 150A, 150B as described herein separating an interior of the atmospheric chamber ATMC from the interior environment of the interior 101 of the transfer chamber 100. The interior of the atmospheric chamber ATMC may hold therein anAty. Docket No. 390P017237-WO (PCT) / Br3241 isolated cell environment of any suitable controlled cell atmosphere or cell vacuum, where the isolated cell environment is isolated from the external environment EXT and the vacuum of the transfer chamber 100 interior 101. The electromagnets or coils 466 of the at least one pack module 102CM may be sealed inside the vacuum of the isolated cell environment, with supporting electronics of the electromagnets or coils 466 exterior the isolated cell environment.

[0050] The controlled cell atmosphere of the atmospheric chamber ATMC is conditioned to maintain a predetermined substantially steady state temperature and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil 466 of each of the at least one pack module 102CM of electromagnets or coils 466. The controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment. Cascaded cooling lines 550 may be provided in and / or around each of the atmospheric chambers ATMC so as to cool (such as by convection) one or more of the coils 466 and isolation wall 150, 150A, 150B (cooling of the isolation wall may cool the interior 101 by drawing heat from the interior 101 to cooling fluid flowing in the cooling lines 550). The cascaded cooling lines 550 are arranged so that cooling fluid passing through the cascaded cooling lines 550 and into each of the atmospheric chambers ATMC is cascaded and flows from a cooling fluid inlet 551 into and between the atmospheric chambers ATMC to a cooling fluid outlet 552.

[0051] Referring to Figs. 1-4B and 6, the coil drive system 102C of the substrate transfer chamber 100 may be provided as one or more coil or pack modules 102CM as noted above however, the coil modules 102CM may be disposed in and encapsulated by a common closable cell or atmospheric chamber CATMC (e.g., the common closable cell CATMC is sized and shaped to enclose therein at least one pack module 102CM formed of a pack portion of the array of electromagnets or coils 102CE in the isolated cell environment) formed in the frame 100F of the transfer chamber 100 (separate and distinct from the interior or inside vacuum environment of the transfer chamber 100) although, the common closable cell CATMC may be formed in a body / frame that is separate and distinct from the frame 100F of the transfer chamber 100. TheAty. Docket No. 390P017237-WO (PCT) / Br3241 interior of the common atmospheric chamber CATMC may hold therein an isolated cell environment of any suitable controlled cell atmosphere or cell vacuum, where the isolated cell environment is isolated from the external environment EXT and the vacuum of the transfer chamber 100 interior 101. The electromagnets or coils 466 of the at least one pack module 102CM may be sealed inside the vacuum of the isolated cell environment, with supporting electronics of the electromagnets or coils 466 exterior the isolated cell environment.

[0052] The controlled cell atmosphere of the common atmospheric chamber CATMC is conditioned to maintain a predetermined substantially steady state temperature and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil 466 of each of the at least one pack module 102CM of electromagnets or coils 466. The controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas (or other suitable cooling fluid) to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment. The cooling lines 650 form a cooling fluid inlet 551 that feeds cooling fluid into the common atmospheric chamber CATMC for convectively cooling the one or more of the coils 466 and isolation wall 150, 150A, 150B (cooling of the isolation wall may cool the interior 101 by drawing heat from the interior 101 to the cooling fluid). The cooling lines 650 also form a cooling fluid outlet 552 that evacuates cooling fluid from the common atmospheric chamber CATMC.

[0053] Referring to Figs. 1-4B and 7, the coil drive system 102C of the substrate transfer chamber 100 may be provided as one or more coil modules 102CM as noted above however, the coils 466 may include coil extensions 466E that are disposed within a coil chamber 710. The coil chamber 710 may be isolated from the interior 101 of the transfer chamber 100 by the isolation wall 150, 150A, 150B. The coil chamber 710 may have an interior environment disposed therein that is substantially the same as the environment (such as vacuum or other environment as described herein) within the interior of the transfer chamber 100 so that there is substantially no or a minimized differential pressure loading on the isolation wall 150, 150A, 150B. The coils 466 and the corresponding one or more coil modules 102CM are disposed outside the coil chamber 710 in an atmospheric environment. The coil chamber 710 may be constructed of any suitable nonAty. Docket No. 390P017237-WO (PCT) / Br3241 magnetic material (such as stainless steel) where magnetic flux MF passes through the coil chamber 710 walls 710W from the coils 466 to the respective coil extensions 466E, although the coil extensions 466E or coils 466 may extend through the coil chamber 710 walls where any suitable seal 711 is employed to seal the aperture through which the coil extension 466E or coil 466 extends.

[0054] Referring to Figs. 1-9, an exemplary method will be described in accordance with the present disclosure. The method includes providing the semiconductor substrate transport apparatus 800 (Fig. 9, Block 900). As described herein, the semiconductor substrate transport apparatus 800 includes the semiconductor substrate transport vacuum chamber 100 and an array of electromagnets or coils 102CE (see Figs. 4A-7). The semiconductor substrate transport vacuum chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The semiconductor substrate transport vacuum chamber 100 has a top 100T, side walls 100SW, and a bottom 100B that defines a substantially level reference plane RP inside the semiconductor transport vacuum chamber 100, and the semiconductor transport vacuum chamber 100 is capable of being sealed from an external environment EXT (e g., external to an interior of the semiconductor transport vacuum chamber 100) in vacuum VAC. The array of electromagnets or coils 102CE is connected to the semiconductor transport vacuum chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level reference plane RP. The array of electromagnets or coils 102CE being arranged so that a series of electromagnets or coils of the array of electromagnets or coils 102CE define at least one drive line within the drive plane DP, and each of the electromagnets or coils 466 is coupled to a power source PS energizing each electromagnet or coils 466.

[0055] The method includes bounding and sealing, with the thin gauge metal sheet 210, the vacuum inside the semiconductor transport vacuum chamber 100 (Fig. 9, Block 910), where an inner surface 210S of the thin gauge metal sheet 210 forms the level reference plane RP inside the semiconductor transport vacuum chamber 100.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0056] The method may include one or more of, individually, in any suitable combination thereof, and / or in combination with any of the features described herein: the thin gauge metal sheet 210 has an outer surface 210T (see Figs. 2B-3B) opposite the inner surface 210S, where the outer surface 210T is exterior the vacuum of the semiconductor transport vacuum chamber 100 and is subjected to atmosphere; the thin gauge metal sheet 210 is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber 100 onto the bottom 100B, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet 210; backing the thin gauge metal sheet 210 with a reinforcement member 200 of the bottom 100B, the reinforcement member 200 being joined to the thin gauge metal sheet 210 via weld or braze joints so that the inner surface 210S of the thin gauge metal sheet 210 forms the substantially level reference plane RP; the reinforcement member 200 is ported, each port 300 extending through the reinforcement member 200 and being sized and shaped to position one of the electromagnets or coils 466 in the port 300 (see, e.g., Figs. 3A, 3B and also 4A and 4B); each electromagnet or coils 466 of the array of electromagnets or coils 102CE is located in a corresponding port 300 and is surrounded by the corresponding port 300 so that each electromagnet or coils 466 is separated from each other electromagnet or coils 466 adjacent the electromagnet or coils 466 by the corresponding port 300; sealing the vacuum inside the semiconductor transport vacuum chamber 100 with a mechanical contact seal 320 (see Figs. 3 A and 3B) of the semiconductor transport vacuum chamber 100, the mechanical contact seal 320 being disposed between a side wall 100SW of the semiconductor transport vacuum chamber 100 and the thin gauge metal sheet 210; the thin gauge metal sheet 210 is formed as a cupped pan 410; the cupped pan 410 includes a base 410B and an array of protrusions 415 extending from one side of the base 410, each protrusion 415 being shaped and sized so as to be received within a respective port 300 of the reinforcement member 200; and the cupped pan 410 includes a base 410B and an array of protrusions 415 extending from one side of the base 410B, each protrusion 415 being shaped and sized so as to receive therein a respective electromagnet or coils 466 of the array of electromagnets or coils 102CE.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0057] Referring to Figs. 1-8 and 10, a method will be described in accordance with the present disclosure. The method includes providing the semiconductor substrate transport apparatus 800 (Fig. 10, Block 1000). As described herein, the workpiece processing apparatus 800 includes the semiconductor substrate transport vacuum chamber 100, a closable cell ATMC, CATMC, and an array of electromagnets or coils 102CE (see Figs. 1 and 5-7). The semiconductor substrate transport vacuum chamber 100 has a plurality of transport ports 100PRT that are each adapted to connect to a respective processing chamber or module PM. The semiconductor substrate transport vacuum chamber 100 has a top 100T, side walls 100SW, and a bottom 100B that defines a substantially level reference plane RP inside the semiconductor transport vacuum chamber 100, and the semiconductor transport vacuum chamber 100 is capable of being sealed from an external environment EXT (e.g., external to an interior of the semiconductor transport vacuum chamber 100) in vacuum VAC.

[0058] The closable cell ATMC, CATMC is formed at least in the bottom 100B. The closable cell ATMC, CATMC being separate and distinct from (e.g., at least the interior of) the substrate transport vacuum chamber 100 and configured so that, the closable cell ATMC closed holds therein an isolated cell environment, of a controlled cell atmosphere or cell vacuum, from the external environment and the vacuum of the semiconductor transport vacuum chamber 100.

[0059] The array of electromagnets or coils 102CE is connected to the semiconductor transport vacuum chamber 100 to form a drive plane DP at a predetermined height H relative to the substantially level reference plane RP. The array of electromagnets or coils 102CE being arranged so that a series of electromagnets or coils of the array of electromagnets or coils 102CE define at least one drive line within the drive plane DP, and each of the electromagnets or coils 466 is coupled to a power source PS energizing each electromagnet or coil 466.

[0060] The method includes enclosing, within the closable cell ATMC, CATMC, at least one pack module 102CM formed of a pack portion of the array of electromagnets or coils 102CE in the isolated cell environment (Fig. 10, Block 1010).Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0061] The method may include one or more of, individually, in any suitable combination thereof, and / or in combination with any of the features described herein: the controlled cell atmosphere of the closable cell ATMC, CATMC is conditioned to maintain a predetermined substantially steady state temp and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil 466 of each of the at least one pack module 102CM of electromagnets or coils 466; the controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment; and the electromagnets or coils 466 of the at least one pack module 102CM may be sealed inside the vacuum of the isolated cell environment, with supporting electronics of the electromagnets or coils 466 exterior the isolated cell environment.

[0062] The following are provided in accordance with the present disclosure and may be employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein:

[0063] A semiconductor substrate transport apparatus includes: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor transport vacuum chamber, and the semiconductor transport vacuum chamber being capable of being sealed from an external environment in vacuum; and an array of electromagnets or coils, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets or coils being arranged so that a series of electromagnets or coils of the array of electromagnets or coils define at least one drive line within the drive plane, and each of the electromagnets or coils being coupled to a power source energizing each electromagnet or coil; wherein the bottom is formed of a thin gauge metal sheet that bounds and seals the vacuum inside the semiconductor transport vacuum chamber, and has an inner surface that forms the level reference plane inside the semiconductor transport vacuum chamber.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0064] The semiconductor substrate transport apparatus may include one or more of the following, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the thin gauge metal sheet has an outer surface opposite the inner surface, the outer surface being exterior the vacuum of the semiconductor transport vacuum chamber and is subjected to atmosphere; the thin gauge metal sheet is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber onto the bottom, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet; the bottom further includes a reinforcement member backing the thin gauge metal sheet and joined to the thin gauge metal sheet via weld or braze joints so that the inner surface of the thin gauge metal sheet forms the substantially level reference plane; the reinforcement member is ported, each port extending through the reinforcement member and sized and shaped to position one of the electromagnets or coils in the port; each electromagnet or coil of the array of electromagnets or coils is located in a corresponding port and is surrounded by the corresponding port so that each electromagnet or coil is separated from each other electromagnet or coil adjacent the electromagnet or coil by the corresponding port; the semiconductor transport vacuum chamber has a mechanical contact seal between a side wall of the semiconductor transport vacuum chamber and the thin gauge metal sheet that seals the vacuum inside the semiconductor transport vacuum chamber; the thin gauge metal sheet is formed as a cupped pan; the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to be received within a respective port of the reinforcement member; and the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to receive therein a respective electromagnet or coil of the array of electromagnets or coils.

[0065] A method includes providing a semiconductor substrate transport apparatus. The semiconductor substrate transport apparatus includes: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respectiveAty. Docket No. 390P017237-WO (PCT) / Br3241 processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor transport vacuum chamber, and the semiconductor transport vacuum chamber being capable of being sealed from an external environment in vacuum, where the bottom is formed of a thin gauge metal sheet; and an array of electromagnets or coils, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets or coils being arranged so that a series of electromagnets or coils of the array of electromagnets or coils define at least one drive line within the drive plane, and each of the electromagnets or coils being coupled to a power source energizing each electromagnet or coil. The method includes bounding and sealing, with the thin gauge metal sheet, the vacuum inside the semiconductor transport vacuum chamber, where an inner surface of the thin gauge metal sheet forms the level reference plane inside the semiconductor transport vacuum chamber.

[0066] The method may include one or more of the following, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the thin gauge metal sheet has an outer surface opposite the inner surface, the outer surface being exterior the vacuum of the semiconductor transport vacuum chamber and is subjected to atmosphere; the thin gauge metal sheet is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber onto the bottom, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet; backing the thin gauge metal sheet with a reinforcement member of the bottom, the reinforcement member being joined to the thin gauge metal sheet via weld or braze joints so that the inner surface of the thin gauge metal sheet forms the substantially level reference plane; the reinforcement member is ported, each port extending through the reinforcement member and sized and shaped to position one of the electromagnets or coils in the port; each electromagnet or coil of the array of electromagnets or coils is located in a corresponding port and is surrounded by the corresponding port so that eachAty. Docket No. 390P017237-WO (PCT) / Br3241 electromagnet or coil is separated from each other electromagnet or coil adjacent the electromagnet or coil by the corresponding port; and sealing the vacuum inside the semiconductor transport vacuum chamber with a mechanical contact seal of the semiconductor transport vacuum chamber, the mechanical contact seal being disposed between a side wall of the semiconductor transport vacuum chamber and the thin gauge metal sheet; the thin gauge metal sheet is formed as a cupped pan; the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to be received within a respective port of the reinforcement member; and the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to receive therein a respective electromagnet or coil of the array of electromagnets or coils.

[0067] A semiconductor substrate transport apparatus includes: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from the external environment in vacuum; and an array of electromagnets or coils, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets or coils being arranged so that a series of electromagnets or coils of the array of electromagnets or coils define at least one drive line within the drive plane, and each of the electromagnets or coils being coupled to a power source energizing each electromagnet or coil; wherein the semiconductor transport vacuum chamber has a closable cell formed at least in the bottom, the closable cell being separate and distinct from the inside of the substrate transport vacuum chamber and configured so that, the closable cell closed holds therein an isolated cell environment, of a controlled cell atmosphere or cell vacuum, from the external environment and the vacuum of the vacuum chamber; and wherein the closable cell is sized and shaped to enclose therein at least one pack module formed of a pack portion of the array of electromagnets or coils in the isolated cell environment.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0068] The semiconductor substrate transport apparatus may include one or more of the following, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controlled cell atmosphere of the closable cell is conditioned to maintain a predetermined substantially steady state temperature and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil of each of the at least one pack module of electromagnets or coils; the controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment; and the electromagnets or coils of the at least one pack module are sealed inside the vacuum of the isolated cell environment, with supporting electronics of the electromagnets or coils exterior the isolated cell environment.

[0069] A method comprises: providing a semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor substrate transport vacuum chamber, and being capable of being sealed from the external environment in vacuum; a closable cell formed at least in the bottom, the closable cell being separate and distinct from the inside of the substrate transport vacuum chamber and configured so that, the closable cell closed holds therein an isolated cell environment, of a controlled cell atmosphere or cell vacuum, from the external environment and the vacuum of the vacuum chamber; and an array of electromagnets or coils, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets or coils being arranged so that a series of electromagnets or coils of the array of electromagnets or coils define at least one drive line within the drive plane, and each of the electromagnets or coils being coupled to a power source energizing each electromagnet or coil. The method includes enclosing, within the closable cell, at least one pack module formed of a pack portion of the array of electromagnets or coils in the isolated cell environment.Aty. Docket No. 390P017237-WO (PCT) / Br3241

[0070] The method may include one or more of the following, employed individually, in any suitable combination thereof, and / or in any suitable combination with the features described herein: the controlled cell atmosphere of the closable cell is conditioned to maintain a predetermined substantially steady state temperature and pressure condition throughout a complete range of duty cycle demands on each electromagnet or coil of each of the at least one pack module of electromagnets or coils; the controlled cell atmosphere is conditioned by forced circulation feeding conditioned gas to the isolated cell environment and exhausting ambient cell gas from the isolated cell environment; and the electromagnets or coils of the at least one pack module are sealed inside the vacuum of the isolated cell environment, with the supporting electronics of the electromagnets or coils exterior the isolated cell environment.

[0071] It should be understood that the foregoing description is only illustrative of the present disclosure. Various alternatives and modifications can be devised by those skilled in the art without departing from the present disclosure. Accordingly, the present disclosure is intended to embrace all such alternatives, modifications and variances that fall within the scope of any claims appended hereto. Further, the mere fact that different features are recited in mutually different dependent or independent claims does not indicate that a combination of these features cannot be advantageously used, such a combination remaining within the scope of the present disclosure.

[0072] What is claimed is:

Claims

Aty. Docket No. 390P017237-WO (PCT) / Br3241CLAIMS1. A semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor substrate transport vacuum chamber, and the semiconductor transport vacuum chamber being capable of being sealed from an external environment in vacuum; and an array of electromagnets, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; wherein the bottom is formed of a thin gauge metal sheet that bounds and seals the vacuum inside the semiconductor transport vacuum chamber, and has an inner surface that forms the level reference plane inside the semiconductor transport vacuum chamber.

2. The semiconductor substrate transport apparatus of claim 1, wherein the thin gauge metal sheet has an outer surface opposite the inner surface, the outer surface being exterior the vacuum of the semiconductor transport vacuum chamber and is subjected to atmosphere.

3. The semiconductor substrate transport apparatus of claim 1, wherein the thin gauge metal sheet is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber onto the bottom, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet.Aty. Docket No. 390P017237-WO (PCT) / Br32414. The semiconductor substrate transport apparatus of claim 1, wherein the bottom further includes a reinforcement member backing the thin gauge metal sheet and joined to the thin gauge metal sheet via weld or braze joints so that the inner surface of the thin gauge metal sheet forms the substantially level reference plane.

5. The semiconductor substrate transport apparatus of claim 4, wherein the reinforcement member is ported, each port extending through the reinforcement member and sized and shaped to position one of the electromagnets in the port.

6. The semiconductor substrate transport apparatus of claim 4, wherein each electromagnet of the array of electromagnets is located in a corresponding port and is surrounded by the corresponding port so that each electromagnet is separated from each other electromagnet adjacent the electromagnet by the corresponding port.

7. The semiconductor substrate transport apparatus of claim 1, wherein the semiconductor transport vacuum chamber has a mechanical contact seal between a side wall of the semiconductor transport vacuum chamber and the thin gauge metal sheet that seals the vacuum inside the semiconductor transport vacuum chamber.

8. The semiconductor substrate transport apparatus of claim 1, wherein the thin gauge metal sheet is formed as a cupped pan.

9. The semiconductor substrate transport apparatus of claim 8, wherein the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to be received within a respective port of the reinforcement member.

10. The semiconductor substrate transport apparatus of claim 8, wherein the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to receive therein a respective electromagnet of the array of electromagnets.Aty. Docket No. 390P017237-WO (PCT) / Br324111. A method comprising: providing a semiconductor substrate transport apparatus comprising: a semiconductor substrate transport vacuum chamber, having a plurality of transport ports that are each adapted to connect to a respective processing chamber, the semiconductor substrate transport vacuum chamber comprising a top, side walls, and a bottom that defines a substantially level reference plane inside the semiconductor transport vacuum chamber, and the semiconductor substrate transport vacuum chamber being capable of being sealed from an external environment in vacuum, where the bottom is formed of a thin gauge metal sheet; and an array of electromagnets, connected to the semiconductor transport vacuum chamber to form a drive plane at a predetermined height relative to the substantially level reference plane, the array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to a power source energizing each electromagnet; and bounding and sealing, with the thin gauge metal sheet, the vacuum inside the semiconductor transport vacuum chamber, where an inner surface of the thin gauge metal sheet forms the level reference plane inside the semiconductor transport vacuum chamber.

12. The method of claim 11, wherein the thin gauge metal sheet has an outer surface opposite the inner surface, the outer surface being exterior the vacuum of the semiconductor transport vacuum chamber and is subjected to atmosphere.

13. The method of claim 11, wherein the thin gauge metal sheet is sized and shaped to support each vacuum chamber load imparted by the semiconductor transport vacuum chamber onto the bottom, including vacuum induced loads, throughout a whole range of vacuum chamber loading conditions as a thin structural membrane or shell load at least in part of the thin gauge metal sheet.Aty. Docket No. 390P017237-WO (PCT) / Br324114. The method of claim 11, further comprising backing the thin gauge metal sheet with a reinforcement member of the bottom, the reinforcement member being joined to the thin gauge metal sheet via weld or braze joints so that the inner surface of the thin gauge metal sheet forms the substantially level reference plane.

15. The method of claim 14, wherein the reinforcement member is ported, each port extending through the reinforcement member and sized and shaped to position one of the electromagnets in the port.

16. The method of claim 14, wherein each electromagnet of the array of electromagnets is located in a corresponding port and is surrounded by the corresponding port so that each electromagnet is separated from each other electromagnet adjacent the electromagnet by the corresponding port.

17. The method of claim 11, further comprising sealing the vacuum inside the semiconductor transport vacuum chamber with a mechanical contact seal of the semiconductor transport vacuum chamber, the mechanical contact seal being disposed between a side wall of the semiconductor transport vacuum chamber and the thin gauge metal sheet.

18. The method of claim 11, wherein the thin gauge metal sheet is formed as a cupped pan.

19. The method of claim 18, wherein the cupped pan includes a base and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to be received within a respective port of the reinforcement member.

20. The method of claim 18, wherein the cupped pan includes abase and an array of protrusions extending from one side of the base, each protrusion being shaped and sized so as to receive therein a respective electromagnet of the array of electromagnets.

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