Detection device and method for producing detection device

Abstract

This detection device includes: a substrate; a plurality of photodiodes that are arranged in a matrix in a detection region of the substrate and each have a lower electrode, an active layer, and an upper electrode stacked in this order; a first sealing film that covers the plurality of photodiodes and is provided on the upper electrodes; and a second sealing film that covers the upper surface of the first sealing film and covers the side surfaces of the active layers, the side surfaces of the upper electrodes, and the side surface of the first sealing film on the outer edge side of the substrate.

Description

Detection device and method for manufacturing the same

[0001] The present invention relates to a detection device and a method for manufacturing a detection device.

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (see, for example, Patent Document 1). Such optical sensors include multiple photodiodes (OPDs: Organic Photodiodes) that use an organic semiconductor material as an active layer. The detection device described in Patent Document 1 (referred to as an organic photodiode device in Patent Document 1) includes at least one photodiode that includes a first organic layer between a first electrode and a second electrode, and a sealing film provided on the photodiode.

[0003] Japanese Patent Application Laid-Open No. 2023-136697

[0004] In a detection device having such an OPD, a sealing film is provided to cover the photodiode to prevent moisture from seeping in. When a sealing film is provided, the organic layer, electrodes, and sealing film that constitute the photodiode must each be patterned, which may increase manufacturing costs.

[0005] An object of the present invention is to provide a detection device that can suppress the intrusion of moisture and reduce manufacturing costs, and a method for manufacturing the detection device.

[0006] A detection device according to one embodiment of the present disclosure includes a substrate, a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each stacked in the order of a lower electrode, an active layer, and an upper electrode, a first sealing film covering the plurality of photodiodes and provided on the upper electrode, and a second sealing film covering an upper surface of the first sealing film and covering, on the outer edge of the substrate, a side surface of the active layer, a side surface of the upper electrode, and a side surface of the first sealing film.

[0007] A detection device according to one embodiment of the present disclosure includes a substrate, a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each stacked in the order of a lower electrode, an active layer, and an upper electrode, a first sealing film covering the plurality of photodiodes and provided on the upper electrode, a resin layer provided on the first sealing film, and a second sealing film covering an upper surface of the resin layer and covering, on the outer edge of the substrate, a side surface of the active layer, a side surface of the upper electrode, a side surface of the first sealing film, and a side surface of the resin layer.

[0008] A manufacturing method for a detection device according to one aspect of the present disclosure includes the steps of: stacking an active layer, an upper electrode, and a first sealing film in this order to cover a plurality of lower electrodes provided in a detection region of a substrate; forming a resin layer in a region of the first sealing film that overlaps with the detection region; using the resin layer as a mask, removing the active layer, the upper electrode, and the first sealing film in a peripheral region different from the detection region and thinning the resin layer; and forming a second sealing film that covers the top surface of the resin layer and also covers the side surfaces of the active layer, the side surfaces of the upper electrode, the side surfaces of the first sealing film, and the side surfaces of the resin layer.

[0009] FIG. 1 is a plan view schematically illustrating a detection device according to a first embodiment. FIG. 2 is a block diagram illustrating an example of the configuration of the detection device according to the first embodiment. FIG. 3 is a circuit diagram illustrating the detection device according to the first embodiment. FIG. 4 is a plan view schematically illustrating the arrangement of multiple photodiodes in a detection region and contact portions and mounting portions in a peripheral region. FIG. 5 is a cross-sectional view taken along the line V-V′ in FIG. 4. FIG. 6 is a cross-sectional view taken along the line VI-VI′ in FIG. 4. FIG. 7 is a cross-sectional view schematically illustrating a detection device before its outer shape is cut. FIG. 8 is an explanatory diagram illustrating a method for manufacturing the detection device according to the first embodiment. FIG. 9 is a cross-sectional view schematically illustrating a detection device according to a first modified example of the first embodiment. FIG. 10 is a cross-sectional view schematically illustrating a detection device according to a second modified example of the first embodiment. FIG. 11 is a cross-sectional view schematically illustrating a detection device according to a second embodiment. FIG. 12 is an explanatory diagram illustrating a method for manufacturing the detection device according to the second embodiment. FIG. 13 is a cross-sectional view schematically illustrating an electronic device according to a third embodiment. FIG. 14 is a cross-sectional view schematically illustrating a light-emitting element included in the electronic device according to the third embodiment.

[0010] Modes (embodiments) for carrying out the present disclosure will be described in detail with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, for clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this disclosure and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0011] In the present disclosure, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0012] First Embodiment Fig. 1 is a plan view schematically showing a detection device according to a first embodiment. As shown in Fig. 1, the detection device 1 has a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0013] A control board 121 is electrically connected to the substrate 21 via a wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. The wiring board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 3), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0014] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where multiple photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the outer periphery of the detection area AA and the outer edge of the substrate 21, where multiple photodiodes PD are not provided.

[0015] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0016] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular thereto. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is the normal direction to the main surface of the substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21 (third direction Dz).

[0017] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0018] For example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs) are used as the light sources 53 and 54. The light sources 53 and 54 emit light of different wavelengths.

[0019] The first light emitted from the light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger or the like. The second light emitted from the light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0020] The arrangement of the light sources 53, 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0021] 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0022] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with a gate drive signal VGL supplied from the gate line drive circuit 15.

[0023] The detection control circuit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0024] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of photodiodes PD connected to the gate lines GL.

[0025] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SL (see FIG. 3 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0026] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0027] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0028] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0029] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0030] The coordinate extraction circuit 45 is a logic circuit that calculates the detected coordinates of the unevenness of the surface of a finger or the like when the signal processing circuit 44 detects contact or proximity of a finger. The coordinate extraction circuit 45 is also a logic circuit that calculates the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0031] 3 is a circuit diagram showing the detection device according to the first embodiment. The circuit configuration of a detection circuit 48 is also shown in FIG. 3. As shown in FIG. 3, a sensor pixel PX includes a photodiode PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0032] 3 shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) arranged in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0033] The drive transistors Tr are provided corresponding to the respective photodiodes PD. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0034] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the cathode of the photodiode PD and the capacitance element Ca.

[0035] A sensor power supply signal VDDSNS is supplied to the anode of the photodiode PD from the power supply circuit 123 (see FIG. 1 ). A sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via the reset transistor TrR.

[0036] When light is irradiated onto the sensor pixel PX during the exposure period, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each sensor pixel PX.

[0037] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts the current or charge supplied from the signal line SL into a voltage corresponding to the current or charge. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input terminal (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 1) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also includes a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0038] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 3 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one photodiode PD.

[0039] Next, the detailed configuration of the photodiode PD will be described with reference to Figures 4 to 6. Figure 4 is a plan view schematically showing the arrangement of a plurality of photodiodes in the detection region and the contact portions and mounting portions in the peripheral region.

[0040] 4, a plurality of photodiodes PD are arranged in a matrix in the detection area AA. The photodiodes PD of this embodiment are organic photodiodes (OPDs) that use an organic semiconductor as the active layer 33 (see FIG. 5).

[0041] The lower electrodes 31 of the photodiodes PD are provided separately for each of the photodiodes PD and are arranged in a matrix in the detection area AA. The upper electrodes 35 of the photodiodes PD are provided continuously across the photodiodes PD and are provided throughout the detection area AA. A portion of the upper electrode 35 extends into the peripheral area GA, is connected to the contact portion CN, and is electrically connected to an external circuit (e.g., the control circuit 122 or the power supply circuit 123 (see FIG. 1 )) through wiring on the substrate 21.

[0042] The detection device 1 has a first sealing film 91 and a second sealing film 92 that cover the multiple photodiodes PD. The first sealing film 91 and the second sealing film 92 are provided to overlap the upper electrodes 35 of the multiple photodiodes PD. The second sealing film 92 extends further toward the outer edge of the substrate 21 than the first sealing film 91. That is, the second sealing film 92 is provided across the detection area AA and the peripheral area GA, and is provided up to the outer edge of the substrate 21. The first sealing film 91 and the second sealing film 92 can prevent moisture from penetrating from the outer edge of the substrate 21 to the detection area AA. The detailed configurations of the photodiodes PD, the insulating films, and the first and second sealing films 91 and 92 will be described later with reference to FIGS. 5 and 6 .

[0043] The mounting portion T is provided on the substrate 21 outside the outer peripheries of the first sealing film 91 and the second sealing film 92. The mounting portion T includes, for example, a connection terminal for connecting to the wiring substrate 71 (see FIG. 1 ). Alternatively, the mounting portion T may include a mounting terminal for mounting an IC (Integrated Circuit) that constitutes the detection circuit 48 or the like.

[0044] Next, a description will be given of the laminated structure of the plurality of photodiodes PD, the first sealing film 91, and the second sealing film 92 of the detection device 1. Fig. 5 is a cross-sectional view taken along line VV' in Fig. 4 .

[0045] In the following description, the direction perpendicular to the surface of the substrate 21 from the substrate 21 toward the first sealing film 91 and the second sealing film 92 will be referred to as the "upper side" or simply "upper." The direction from the first sealing film 91 and the second sealing film 92 toward the substrate 21 will be referred to as the "lower side" or simply "lower."

[0046] 5 , the detection device 1 includes a substrate 21, a drive transistor Tr, a plurality of inorganic insulating films (an undercoat film 22, a gate insulating film 23, an interlayer insulating film 24, and a superimposed insulating film 25), an organic insulating film 26, a barrier film 27, a photodiode PD, a first sealing film 91, and a second sealing film 92. In the detection area AA, the plurality of inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25), the organic insulating film 26, the barrier film 27, the photodiode PD, the first sealing film 91, and the second sealing film 92 are stacked in this order on the substrate 21.

[0047] The substrate 21 is an insulating substrate made of a film-like resin. The driving transistor Tr is provided in a region overlapping with the lower electrode 31 of the photodiode PD. Specifically, the driving transistor Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64.

[0048] The light-shielding film 65 is provided on the substrate 21. The light-shielding film 65 is provided between the semiconductor layer 61 and the substrate 21. The light-shielding film 65 prevents light from entering the channel region of the semiconductor layer 61 from the substrate 21 side.

[0049] The undercoat film 22 is provided on the substrate 21, covering the light-shielding film 65. The undercoat film 22 is formed of an inorganic insulating film such as a silicon nitride film or a silicon oxide film. The configuration of the undercoat film 22 is not limited to a single layer, and may be a laminated film having, for example, two or three or more layers.

[0050] The drive transistor Tr is provided on a substrate 21. The semiconductor layer 61 is provided on an undercoat film 22. The gate insulating film 23 is provided on the undercoat film 22, covering the semiconductor layer 61. The gate insulating film 23 is an inorganic insulating film such as a silicon oxide film. The gate electrode 64 is provided on the gate insulating film 23.

[0051] 5, the driving transistor Tr has a top gate structure. However, the present invention is not limited to this, and the driving transistor Tr may have a bottom gate structure or a dual gate structure in which gate electrodes 64 are provided on both the upper and lower sides of the semiconductor layer 61.

[0052] The interlayer insulating film 24 is provided on the gate insulating film 23, covering the gate electrode 64. The interlayer insulating film 24 has, for example, a stacked structure of a silicon nitride film and a silicon oxide film. The source electrode 62 and the drain electrode 63 are provided on the interlayer insulating film 24. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a contact hole CH2 provided through the gate insulating film 23 and the interlayer insulating film 24. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a contact hole CH3 provided through the gate insulating film 23 and the interlayer insulating film 24. The superposed insulating film 25 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0053] A connection wiring 64a is provided in the same layer as the gate electrode 64. The connection wiring 64a is electrically connected to the gate electrode 64. A connection wiring 65a is provided in the same layer as the light-shielding film 65. The connection wiring 65a is electrically connected to the light-shielding film 65. The connection wiring 64a and the connection wiring 65a are connected via a contact hole CH4 that penetrates the undercoat film 22 and the gate insulating film 23. As a result, the light-shielding film 65 is electrically connected to the gate electrode 64 via the connection wirings 64a, 65a, and is supplied with the same potential as the gate electrode 64.

[0054] The organic insulating film 26 is provided on the superposed insulating film 25, covering the source electrode 62 and the drain electrode 63 of the drive transistor Tr. The organic insulating film 26 is a planarizing film made of an organic insulating material. In this embodiment, a contact hole CH1 in the organic insulating film 26 is provided in a region overlapping with the source electrode 62. The lower electrode 31 of the photodiode PD is electrically connected to the source electrode 62 at the bottom of the contact hole CH1.

[0055] The detection device 1 may be configured such that the superimposed insulating film 25 of the inorganic insulating films (the undercoat film 22, the gate insulating film 23, the interlayer insulating film 24, and the superimposed insulating film 25) is not provided. In this case, the organic insulating film 26 is provided on the interlayer insulating film 24, covering the source electrode 62 and the drain electrode 63.

[0056] The barrier film 27 is provided on the organic insulating film 26. The barrier film 27 is made of an inorganic insulating material such as silicon nitride (SiN).

[0057] The photodiode PD is provided on the barrier film 27. The photodiode PD has a lower electrode 31, a lower buffer layer 32, an active layer 33, an upper buffer layer 34, and an upper electrode 35. In the photodiode PD, the lower electrode 31, the lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are stacked in this order in a direction perpendicular to the substrate 21.

[0058] The lower electrode 31 is formed of a light-transmitting conductive material such as ITO (Indium Tin Oxide). As described above, a lower electrode 31 is provided for each photodiode PD. The lower electrodes 31 of adjacent photodiodes PD are disposed spaced apart from each other.

[0059] The insulating film 38 is provided to cover the periphery of the lower electrode 31. The insulating film 38 insulates the lower electrodes 31 of adjacent photodiodes PD. Furthermore, since the insulating film 38 is provided, it is possible to suppress leakage current between adjacent photodiodes PD. Furthermore, the insulating film 38 is provided to cover the contact hole CH1, and covers the lower electrode 31 in the region overlapping with the contact hole CH1. Even if a step occurs in the lower buffer layer 32 in the region overlapping with the contact hole CH1, the insulating film 38 can suppress the occurrence of a short circuit between the active layer 33 and the lower electrode 31. In this embodiment, the insulating film 38 is a silicon nitride film (SiN) or a silicon oxide film (SiO ２ ) or other inorganic insulating materials.

[0060] The lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided continuously across the multiple photodiodes PD. Specifically, the lower buffer layer 32, the active layer 33, the upper buffer layer 34, and the upper electrode 35 are provided so as to overlap the lower electrodes 31, and also so as to overlap the barrier film 27 located between adjacent lower electrodes 31.

[0061] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 33 change depending on the light irradiated thereto. An organic material is used as the material of the active layer 33. Specifically, the active layer 33 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. For example, a low-molecular organic material, C ６０ (fullerene), PCBM (phenyl C ６１ Butyric acid methyl ester: Phenyl C 61 -butyric acid methyl ester), CuPc (Copper Phthalocyanine), F １６ CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (a derivative of perylene), or the like can be used.

[0062] The active layer 33 can be formed by a vapor deposition (dry process) using these low molecular weight organic materials. In this case, the active layer 33 is formed by, for example, CuPc and F １６ CuPc laminated film or rubrene and C ６０ The active layer 33 may be a laminated film of the above-mentioned low molecular weight organic material and high molecular weight organic material. The active layer 33 may also be formed by a wet process. In this case, the active layer 33 is made of a material that combines the above-mentioned low molecular weight organic material and high molecular weight organic material. Examples of high molecular weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 33 may be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed. The active layer 33 is not limited to a bulk heterostructure and may be a PIN type.

[0063] The lower buffer layer 32 and the upper buffer layer 34 are provided to allow holes and electrons generated in the active layer 33 to easily reach the lower electrode 31 or the upper electrode 35. The lower buffer layer 32 is provided between the lower electrode 31 and the active layer 33, and is in direct contact with the lower electrode 31 and the active layer 33. The upper buffer layer 34 is provided between the active layer 33 and the upper electrode 35, and is in direct contact with the active layer 33 and the upper electrode 35.

[0064] In this embodiment, the lower electrode 31 is the cathode electrode of the photodiode PD, and the upper electrode 35 is the anode electrode of the photodiode PD. In this case, the lower buffer layer 32 is an electron transport layer, and the upper buffer layer 34 is a hole transport layer. The material of the electron transport layer is ethoxylated polyethyleneimine (PEIE). The material of the hole transport layer is a metal oxide layer. As the metal oxide layer, tungsten oxide (WO ３ ), molybdenum oxide, etc. are used.

[0065] The lower electrode 31 may be the anode electrode of the photodiode PD, and the upper electrode 35 may be the cathode electrode of the photodiode PD. In this case, the lower buffer layer 32 may be a hole transport layer, and the upper buffer layer 34 may be an electron transport layer.

[0066] The upper electrode 35 is provided on the upper buffer layer 34. The upper electrode 35 is formed of a light-transmitting conductive material such as ITO or IZO (Indium Zinc Oxide). However, the upper electrode 35 is not limited thereto, and may be formed of a light-non-transmitting conductive material such as silver (Ag).

[0067] The first sealing film 91 and the second sealing film 92 are provided on the upper electrode 35. More specifically, the first sealing film 91 is provided on the upper electrode 35, and the second sealing film 92 is provided to cover the upper surface of the first sealing film 91. The first sealing film 91 and the second sealing film 92 are formed of an inorganic insulating material such as silicon nitride (SiN). The first sealing film 91 and the second sealing film 92 effectively seal the photodiode PD and can prevent moisture from entering from the upper surface. Note that the first sealing film 91 and the second sealing film 92 are not limited to single-layer films and may also be stacked films. Furthermore, the first sealing film 91 and the second sealing film 92 may be formed of the same inorganic insulating material or different inorganic insulating materials.

[0068] Next, the configuration of the active layer 33, upper electrode 35, first sealing film 91, and second sealing film 92 in the peripheral area GA will be described. Figure 6 is a cross-sectional view taken along line VI-VI' in Figure 4. Note that in Figure 6, the lower buffer layer 32 and the upper buffer layer 34 are omitted for ease of viewing.

[0069] 6 , the undercoat film 22, gate insulating film 23, interlayer insulating film 24, and superimposed insulating film 25 are provided across the detection area AA and peripheral area GA. The organic insulating film 26 and barrier film 27 are not provided in the peripheral area GA. That is, in the peripheral area GA, the organic insulating film 26 and barrier film 27 are removed, and an insulating film 38 is provided directly on and in contact with the superimposed insulating film 25.

[0070] The mounting portion T has a connection terminal 81 and connection wirings 82 and 83. The connection terminal 81 is connected to, for example, the wiring substrate 71 (see FIG. 1 ) and connects an external circuit (for example, the control circuit 122 or the power supply circuit 123 (see FIG. 1 )) to the multiple photodiodes PD in the detection area AA. The connection wirings 82 are provided on the interlayer insulating film 24, and the connection wirings 83 are provided on the gate insulating film 23.

[0071] The connection terminal 81 is provided on the superimposed insulating film 25 in the peripheral area GA. The connection terminal 81 is connected to the connection wiring 82 through an opening provided in the region of the superimposed insulating film 25 where the connection terminal 81 overlaps with the connection wiring 82.

[0072] The active layer 33 and upper electrode 35 that constitute the photodiode PD are provided continuously from the detection area AA to the peripheral area GA. In the peripheral area GA, the active layer 33 and upper electrode 35 are stacked in this order on an insulating film 38. Furthermore, the active layer 33 and upper electrode 35 are not provided on the outer edge side of the substrate 21 in the peripheral area GA, at least in an area that overlaps with the mounting portion T. A side surface 33s of the active layer 33 and a side surface 35s of the upper electrode 35 are located between the outer edge of the detection area AA and the connection terminal 81 in the peripheral area GA.

[0073] The first sealing film 91 and the second sealing film 92 are provided continuously from the detection area AA to the peripheral area GA. The first sealing film 91 is provided on the upper electrode 35 in the detection area AA and the peripheral area GA. The first sealing film 91 is not provided on the side surface 33s of the active layer 33 or the side surface 35s of the upper electrode 35. The side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, and the side surface 91s of the first sealing film 91 are arranged to form a single continuous surface. In other words, the upper end of the side surface 33s of the active layer 33 is connected to the lower end of the side surface 35s of the upper electrode 35. The upper end of the side surface 35s of the upper electrode 35 is connected to the lower end of the side surface 91s of the first sealing film 91.

[0074] The second sealing film 92 covers the upper surface of the first sealing film 91 and is provided up to the outer edge side of the substrate 21 beyond the side surface 91s of the first sealing film 91. That is, the second sealing film 92 covers the side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, and the side surface 91s of the first sealing film 91 on the outer edge side of the substrate 21. In this embodiment, the second sealing film 92 is in direct contact with the upper surface of the first sealing film 91, and is also in direct contact with the side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, and the side surface 91s of the first sealing film 91. In addition, the side surface 92s of the second sealing film 92 is located closer to the detection area AA than the connection terminal 81 of the mounting portion T.

[0075] With the above-described configuration, the active layer 33 and upper electrode 35 constituting the photodiode PD and the first sealing film 91 have the same outer shape, so that at least the upper electrode 35 and the first sealing film 91 can be patterned using a common mask in the manufacturing process of the detection device 1. Furthermore, the side surface 33s of the active layer 33 and the side surface 35s of the upper electrode 35 that are not covered by the first sealing film 91 are covered by the second sealing film 92. Therefore, the detection device 1 of this embodiment can suppress moisture penetration and reduce manufacturing costs.

[0076] FIG. 7 is a cross-sectional view schematically illustrating the detection device before cutting. Unlike FIGS. 5 and 6, FIG. 7 illustrates a cross-section of the detection device before cutting. The detection device 1 of this embodiment is formed by cutting the detection device before cutting along the outline cut line L1. The cutting along the outline cut line L1 is performed by, for example, dicing or laser processing. FIG. 7 also illustrates a cross-section of one of the other three sides of the four sides of the substrate 21 other than the side on which the contact portion CN and the mounting portion T are provided (the bottom side of the substrate 21 in FIG. 4).

[0077] 7 , the detection device 1 before the outline cutting has an outline processed portion 97 on the outer edge of the peripheral area GA. In the area between the outline processed portion 97 and the sensor pixels PX of the detection area AA, the organic insulating film 26 and the barrier film 27 are removed. That is, the insulating film 38, the active layer 33, and the upper electrode 35 are stacked on the superimposed insulating film 25. The first sealing film 91 and the second sealing film 92 are provided on the upper electrode 35.

[0078] Even on a side other than the side on which the contact portion CN and the mounting portion T are provided (the lower side of the substrate 21 in FIG. 4 ), the first sealing film 91 is not provided on the side surface 33 s of the active layer 33 or the side surface 35 s of the upper electrode 35, and the side surface 33 s of the active layer 33, the side surface 35 s of the upper electrode 35, and the side surface 91 s of the first sealing film 91 are arranged to form a single continuous surface. In addition, the second sealing film 92 covers the upper surface of the first sealing film 91, and also covers the side surface 33 s of the active layer 33, the side surface 35 s of the upper electrode 35, and the side surface 91 s of the first sealing film 91.

[0079] In the contour processed portion 97, the insulating film 38, the active layer 33, the upper electrode 35, the first sealing film 91, and the second sealing film 92 are not provided. In addition, in the contour processed portion 97, a groove 85 is provided at a position overlapping with the contour cut line L1. The groove 85 is formed by removing the inorganic insulating film (from the undercoat film 22 to the superimposed insulating film 25) on the substrate 21. This makes it possible to suppress the occurrence of cracks in the inorganic insulating film during the contour cutting.

[0080] An insulating film 38 is laminated in the peripheral area GA, which is located inside (on the detection area AA side) of the outer shape processing section 97. In other words, in the peripheral area GA, most of the area other than the grooves 85 necessary for outer shape processing is protected by the insulating film 38. Therefore, damage to the various wirings of the substrate 21 provided below the insulating film 38 can be suppressed during patterning of the photodiode PD and the like.

[0081] (Method of manufacturing the detection device of the first embodiment) Fig. 8 is an explanatory diagram for explaining the method of manufacturing the detection device of the first embodiment. Note that Fig. 8 does not show the drive transistor Tr, various wirings, and insulating films formed between the substrate 21 and the photodiode PD.

[0082] 8, an organic layer that will become the active layer 33 is formed by coating (step ST1) to cover the plurality of lower electrodes 31 and the insulating film 38 formed on the substrate 21. The active layer 33 is provided on at least the entire surface of the detection area AA. The active layer 33 is formed by coating using, for example, spin coating or a slit coater.

[0083] Next, the upper electrode 35 is formed on the active layer 33 (step ST2). The upper electrode 35 is made of, for example, IZO. The upper electrode 35 is formed on the entire surface of the active layer 33, covering the detection area AA and the peripheral area GA, by, for example, sputtering.

[0084] Next, a first sealing film 91 is formed on the upper electrode 35 (step ST3). The first sealing film 91 is formed on the entire surface of the upper electrode 35. A side surface 91s of the first sealing film 91 and a side surface 35s of the upper electrode 35 are arranged to form a single continuous surface on the outer edge side of the substrate 21. The first sealing film 91 is formed of an inorganic insulating material such as silicon nitride (SiN).

[0085] A resin layer 94 is formed on the first sealing film 91 by photolithography and etching (step ST4). The resin layer 94 is a resist resin, and is provided in an area overlapping the detection area AA (an area where a plurality of photodiodes PD are to be formed), and is removed in an area overlapping the peripheral area GA.

[0086] The resin layer 94 is used as a mask to pattern the first sealing film 91 and the upper electrode 35 (step ST5). In step ST5, the first sealing film 91 and the upper electrode 35 are removed by dry etching from areas where the resin layer 94 is not provided. The first sealing film 91 and the upper electrode 35 remain in areas where the resin layer 94 is provided (areas where multiple photodiodes PD are to be formed). Also, in step ST5, the outer edge side of the active layer 33 may be removed by dry etching. As a result, the side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, and the side surface 91s of the first sealing film 91 are formed to form a single continuous surface. Also, in step ST5, the resin layer 94 is removed by dry etching.

[0087] Next, a second sealing film 92 is formed to cover the top surface of the upper electrode 35, as well as the side surface 33 s of the active layer 33, the side surface 35 s of the upper electrode 35, and the side surface 91 s of the first sealing film 91 (step ST6). The second sealing film 92 is provided over the entire surface of the substrate 21, spanning the detection area AA and the peripheral area GA. The second sealing film 92 is formed of an inorganic insulating material, such as silicon nitride (SiN).

[0088] The detection device 1 can be manufactured through the above-described steps. Note that the manufacturing method of the detection device 1 shown in FIG. 8 is merely an example and can be modified as appropriate. For example, in step ST6, the second sealing film 92 does not need to be provided in an area of ​​the peripheral area GA that overlaps with the contact portion CN, the mounting portion T, etc.

[0089] 9 is a cross-sectional view schematically showing a detection device according to a first modification of the first embodiment. In the following description, the same components as those described in the above embodiment are denoted by the same reference numerals, and redundant description will be omitted.

[0090] As shown in FIG. 9 , in a detection device 1A according to the first modification of the first embodiment, the surface roughness of an upper surface 91 a of a first sealing film 91 is greater than the surface roughness of an upper surface 92 a of a second sealing film 92 .

[0091] 8, the resin layer 94 provided on the first sealing film 91 is removed by dry etching. In this process, a portion of the upper surface 91a of the first sealing film 91 is also dry-etched, and irregularities of about several hundred nanometers are formed on the upper surface 91a of the first sealing film 91. As a result, the surface condition of the upper surface 91a of the first sealing film 91 becomes rough.

[0092] In this modification, the surface roughness of the upper surface 91a of the first sealing film 91 is large, so that the adhesion between the first sealing film 91 and the second sealing film 92 can be improved.

[0093] (Second Modification) FIG. 10 is a cross-sectional view schematically illustrating a detection device according to a second modification of the first embodiment. As shown in FIG. 10 , detection device 1B according to the second modification of the first embodiment has a third sealing film 95 provided between first sealing film 91 and second sealing film 92 in a direction perpendicular to substrate 21. The stacked second sealing film 92 and third sealing film 95 cover an upper surface 91 a of first sealing film 91, as well as a side surface 33 s of active layer 33, a side surface 35 s of upper electrode 35, and a side surface 91 s of first sealing film 91. That is, third sealing film 95 is provided in contact with an upper surface 91 a of first sealing film 91, a side surface 33 s of active layer 33, a side surface 35 s of upper electrode 35, and a side surface 91 s of first sealing film 91. Second sealing film 92 covers the upper surface and side surfaces of third sealing film 95.

[0094] The first sealing film 91 and the second sealing film 92 are inorganic insulating films such as silicon nitride (SiN) films, and the third sealing film 95 is an organic insulating film such as epoxy resin or acrylic resin.

[0095] In this modification, in addition to the first sealing film 91 and the second sealing film 92, the third sealing film 95 is provided, and therefore the sealing function can be improved.

[0096] Second Embodiment Fig. 11 is a cross-sectional view schematically illustrating a detection device according to a second embodiment. As shown in Fig. 11, the detection device 1C according to the second embodiment differs from the first embodiment in that it has a resin layer 94 provided on a first sealing film 91. The resin layer 94 covers the upper surface of the first sealing film 91. Furthermore, the first sealing film 91 and the resin layer 94 are not provided on the side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, or the side surface 91s of the first sealing film 91. The side surface 33s of the active layer 33, the side surface 35s of the upper electrode 35, the side surface 91s of the first sealing film 91, and the side surface 94s of the resin layer 94 are arranged to form a single continuous surface.

[0097] The second sealing film 92 covers the upper surface of the resin layer 94, and also covers the side surface 33 s of the active layer 33, the side surface 35 s of the upper electrode 35, the side surface 91 s of the first sealing film 91, and the side surface 94 s of the resin layer 94 on the outer edge side of the substrate 21. In other words, the resin layer 94 is disposed between the first sealing film 91 and the second sealing film 92 in the direction perpendicular to the substrate 21.

[0098] In this embodiment, since the resin layer 94 is provided in addition to the first sealing film 91 and the second sealing film 92, the sealing function can be improved.

[0099] (Manufacturing method of detection device according to the second embodiment) Figure 12 is an explanatory diagram for explaining a manufacturing method of a detection device according to the second embodiment. In the manufacturing method of the detection device 1C according to the second embodiment, steps ST1 to ST4 (see Figure 8) of the manufacturing method of the detection device 1 according to the first embodiment described above are also common to the manufacturing method of this embodiment. In Figure 12, for ease of understanding, step ST4 in Figure 8 is shown as step ST11, and repeated explanation of steps ST1 to ST3 will be omitted.

[0100] 12, a resin layer 94 is formed on the first sealing film 91 by photolithography and etching (step ST11). The resin layer 94 is a resist resin, and is provided in an area overlapping the detection area AA (an area where a plurality of photodiodes PD are to be formed), and is removed in an area overlapping the peripheral area GA.

[0101] Next, the resin layer 94 is used as a mask to pattern the first sealing film 91 and the upper electrode 35 (step ST12). In step ST12, the first sealing film 91 and the upper electrode 35 are removed by dry etching in an area (peripheral area GA) where the resin layer 94 is not provided. The first sealing film 91 and the upper electrode 35 remain in an area (area where multiple photodiodes PD are to be formed) where the resin layer 94 is provided. In step ST12, the resin layer 94 remains on the first sealing film 91. However, the thickness of the resin layer 94 is formed by dry etching to be thinner than the thickness in step ST11.

[0102] Next, a second sealing film 92 is formed to cover the upper surface of the resin layer 94, as well as the side surfaces 33 s of the active layer 33, the side surfaces 35 s of the upper electrode 35, the side surfaces 91 s of the first sealing film 91, and the side surfaces 94 s of the resin layer 94 (step ST13). The second sealing film 92 is provided over the entire surface of the substrate 21, spanning the detection area AA and the peripheral area GA.

[0103] Through the steps described above, the detection device 1C according to the second embodiment can be manufactured.

[0104] Third Embodiment Fig. 13 is a cross-sectional view schematically showing an electronic device according to a third embodiment. Fig. 14 is a cross-sectional view schematically showing a light-emitting element included in the electronic device according to the third embodiment. In the first and second embodiments described above, the detection devices 1, 1A, 1B, and 1C each having a plurality of photodiodes PD have been described, but the configurations of the first sealing film 91, the second sealing film 92, etc. can also be applied to other electronic devices 100.

[0105] 13 , electronic device 100 includes substrate 141, light-emitting layer 130, first sealing film 191, second sealing film 192, and third sealing film 195. Light-emitting layer 130 includes, for example, a plurality of light-emitting elements 130 a (see FIG. 14 ). Light-emitting elements 130 a are, for example, light-emitting diodes (LEDs). Light-emitting layer 130 includes, for example, a plurality of light-emitting elements 130 a arranged in a matrix.

[0106] That is, the electronic device 100 of the third embodiment is an LED package. Alternatively, the electronic device 100 of the third embodiment may be configured as a display device including a plurality of light emitting elements 130a.

[0107] First sealing film 191, second sealing film 192, and third sealing film 195 have the same configuration as in the second modification described above. That is, third sealing film 195 is provided between first sealing film 191 and second sealing film 192 in a direction perpendicular to substrate 141. First sealing film 191 is provided on the upper surface of light-emitting layer 130. Third sealing film 195 covers upper surface 191a of first sealing film 191, as well as side surface 130s of light-emitting layer 130 and side surface 191s of first sealing film 191. Second sealing film 192 covers the upper surface and side surfaces of third sealing film 195.

[0108] 14, the light emitting element 130a is provided on a substrate 141 via a buffer layer 142. The light emitting element 130a has a bonding layer 131, an electron injection layer 132, a light emitting layer 133, a hole injection layer 134, electrodes 135 and 136, and a passivation film 137.

[0109] The bonding layer 131, electron injection layer 132, light-emitting layer 133, and hole injection layer 134 are stacked in this order on the buffer layer 142. The passivation film 137 covers the top surface of the hole injection layer 134 and the side surfaces of the bonding layer 131, electron injection layer 132, light-emitting layer 133, and hole injection layer 134. The electrodes 135 and 136 are provided in regions overlapping with openings 138 and 139 provided in the passivation film 137. The electrode 135 is electrically connected to the cathode, and the electrode 136 is electrically connected to the anode.

[0110] Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible within the scope of the present disclosure. Appropriate modifications made within the scope of the present disclosure naturally fall within the technical scope of the present disclosure. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-described embodiments and modifications.

[0111] 1, 1A, 1B, 1C Detector 10 Sensor section 21 Substrate 26 Organic insulating film 27 Barrier film 31 Lower electrode 32 Lower buffer layer 33 Active layer 33s, 35s, 91s, 92s, 94s Side surface 34 Upper buffer layer 35 Upper electrode 38 Insulating film 81 Connection terminal 91 First sealing film 92 Second sealing film 94 Resin layer 95 Third sealing film 100 Electronic device T Mounting section PD Photodiode PX Sensor pixel Tr Drive transistor

Claims

1. A detection device comprising: a substrate; a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each photodiode being stacked in the order of a lower electrode, an active layer, and an upper electrode; a first sealing film covering the plurality of photodiodes and provided on the upper electrode; and a second sealing film covering an upper surface of the first sealing film and, on the outer edge of the substrate, a side surface of the active layer, a side surface of the upper electrode, and a side surface of the first sealing film.

2. The detection device according to claim 1, wherein the first sealing film is not provided on the side surfaces of the active layer and the upper electrode, and the side surfaces of the active layer, the upper electrode, and the first sealing film are arranged continuously.

3. The detection device according to claim 1, wherein the surface roughness of the upper surface of the first sealing film is greater than the surface roughness of the upper surface of the second sealing film.

4. The detection device described in claim 1, further comprising a third sealing film provided between the first sealing film and the second sealing film in a direction perpendicular to the substrate, wherein the first sealing film and the second sealing film are inorganic insulating films and the third sealing film is an organic insulating film, and the stacked second sealing film and third sealing film cover an upper surface of the first sealing film as well as side surfaces of the active layer, the upper electrode, and the first sealing film.

5. A detection device comprising: a substrate; a plurality of photodiodes arranged in a matrix in a detection region of the substrate, each photodiode being stacked in the order of a lower electrode, an active layer, and an upper electrode; a first sealing film covering the plurality of photodiodes and provided on the upper electrode; a resin layer provided on the first sealing film; and a second sealing film covering an upper surface of the resin layer and covering, on the outer edge of the substrate, a side surface of the active layer, a side surface of the upper electrode, a side surface of the first sealing film, and a side surface of the resin layer.

6. A detection device as described in claim 5, wherein the first sealing film and the resin layer are not provided on the side surfaces of the active layer and the upper electrode, and the side surfaces of the active layer, the upper electrode, the first sealing film, and the resin layer are arranged continuously.

7. A detection device according to any one of claims 1 to 6, wherein the lower electrodes of the photodiodes are arranged separately for each of the plurality of photodiodes, and the active layer and the upper electrode are provided continuously across the plurality of photodiodes, covering the plurality of lower electrodes.

8. A method for manufacturing a detection device, comprising the steps of: covering a plurality of lower electrodes provided in a detection region of a substrate, and laminating an active layer, an upper electrode, and a first sealing film in this order; forming a resin layer in an area of ​​the first sealing film that overlaps with the detection region; using the resin layer as a mask, removing the active layer, the upper electrode, and the first sealing film in a peripheral area different from the detection region, and thinning the resin layer; and forming a second sealing film that covers the top surface of the resin layer, and also covers the side surfaces of the active layer, the side surfaces of the upper electrode, the side surfaces of the first sealing film, and the side surfaces of the resin layer.

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