Silicon negative electrode material for lithium-ion secondary battery

Abstract

The present invention relates to a silicon negative electrode material for a lithium-ion secondary battery, manufactured from waste silicon kerf, and may provide: a silicon negative electrode material for a lithium-ion secondary battery, comprising a flake-shaped silicon composite in which a composite layer comprising an oxide layer and a carbon-containing layer is formed on flake-shaped silicon obtained from waste silicon kerf; and a negative electrode and a lithium-ion secondary battery comprising same, wherein the silicon negative electrode material, when formed into a composite with graphite, exhibits excellent packing density and allows more lithium to be charged per unit volume, while also providing superior economic efficiency through the use of waste silicon kerf.

Description

Silicon anode material for lithium-ion secondary batteries

[0001] The present invention relates to a silicon-containing negative electrode material for a lithium-ion secondary battery and a lithium-ion secondary battery including the same, and more particularly, to a silicon negative electrode material for a lithium-ion secondary battery having excellent charge capacity and lifespan, in which a composite layer including an oxide layer and carbon is formed on a plate-shaped waste silicon kerf, and a lithium-ion secondary battery including the same.

[0002] Graphite is a representative anode material for lithium-ion secondary batteries. It has a layered structure and a mechanism for lithium ion insertion and charging between layers. Graphite-based anode materials have a theoretical capacity of 372 mAh / g, but in practice, they exhibit a capacity of 360 mAh / g. With the growing demand for higher capacities, research and development is actively underway to develop materials with higher capacities than graphite-based anode materials.

[0003] Among the materials with higher capacity than graphite, silicon (Si)-based anode materials have a theoretical capacity of 4200 mAh / g, which is more than 10 times that of graphite, and silicon anode materials are attracting attention as a major material that can replace graphite anode materials. However, silicon anode materials have a short lifespan. This is because during the charge and discharge process, in which four lithium ions bind to and then leave one silicon cell, a volume change of up to 300% occurs, and cracks occur in the parts of the silicon that cannot return to their original state after the volume expansion. Moreover, during this process, they separate into fine nanoparticles, which cuts off the electrical connection with the electrolyte or electrolytic solution, making it impossible to recharge lithium.

[0004] These problems with silicon anode materials are widely known, and active research and development is underway to suppress cracking that occurs in silicon anode materials during charge and discharge. For example, Korean Patent No. 2476118 discloses a technology for increasing cycle life by creating nanoscale fine silicon particles, and Korean Patent No. 2019-0083613 discloses a technology for improving the lifespan of silicon anode materials by coating porous silicon clusters with amorphous carbon.

[0005] However, despite the progress in technological development, the amount of silicon anode material used in the anode of lithium-ion secondary batteries is still small, and silicon anode material technology that can replace the majority of graphite anode materials is still in demand worldwide.

[0006]

[0007] The present invention aims to solve the problem of silicon-based negative electrode materials by using plate-shaped silicon formed by waste silicon kerf, thereby providing a silicon negative electrode material with significantly improved filling rate and lifespan, and the silicon-based negative electrode material of the present invention also has excellent commercial feasibility and economic feasibility.

[0008] The present invention provides a silicon anode material for a lithium ion secondary battery comprising a plate-like silicon composite manufactured from plate-like silicon formed by a silicon kerf, wherein the plate-like silicon composite comprises plate-like silicon particles, an oxide layer formed by oxidizing the surface of the plate-like silicon particles, a silicon carbide layer formed on the outer surface of the oxide layer, and a carbon coating layer formed by coating with conductive carbon to surround the silicon carbide layer.

[0009] In the silicon anode material of the present invention, the plate-shaped silicon may have an average thickness of 10 to 100 nm and an average length of 10 μm or less.

[0010] In the silicon anode material of the present invention, the oxide layer may have an average thickness of 2 to 10 nm.

[0011] In the silicon anode material of the present invention, the silicon carbide layer may have an average thickness of 1 to 5 nm.

[0012] In the silicon anode material of the present invention, the silicon carbide layer can be formed by replacing some of the oxygen in the oxide layer with carbon.

[0013] In the silicon negative electrode material of the present invention, the carbon coating layer may have an average thickness of 3 to 20 nm.

[0014] The silicon anode material of the present invention may further include graphite.

[0015] The present invention can provide a negative electrode including a silicon negative electrode material according to the present invention.

[0016] The present invention can provide a lithium ion secondary battery including a negative electrode according to the present invention.

[0017] The silicon anode material for a lithium ion secondary battery of the present invention forms a multilayer structure including an oxide layer and a carbon-containing layer on a plate-like silicon formed with a waste silicon kerf, so that when combined with graphite, the filling rate is excellent and more lithium can be charged based on the same volume, and the use of a waste silicon kerf also provides excellent economic efficiency.

[0018]

[0019] FIG. 1 is an SEM photograph of plate-shaped silicon used in the manufacture of a silicon negative electrode material for a lithium-ion secondary battery according to an embodiment of the present invention.

[0020] Figure 2 is an exemplary diagram showing an oxide layer formed on a plate-shaped silicon particle according to an embodiment of the present invention.

[0021] Figure 3 is an exemplary drawing showing a silicon carbide layer formed on a plate-shaped silicon particle having an oxide layer formed in Figure 2.

[0022] Figure 4 is an exemplary drawing showing the appearance of a plate-shaped silicon composite in which a carbon layer is formed on the silicon particles of Figure 3.

[0023] Figure 5 is a TEM photograph of the plate-shaped silicon composite of Figure 4.

[0024] Figure 6 is a TEM photograph of plate-shaped silicon particles from which carbon has been removed from the plate-shaped silicon composite of Figure 5.

[0025] Figure 7 is a flow chart schematically showing a method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to an embodiment of the present invention.

[0026] Figure 8 is a flow chart that further includes a pretreatment step, a doping step, a secondary disintegration step, and a silicon carbide formation step in Figure 7.

[0027] Figure 9 is a graph showing the results of a full cell charge / discharge test of Example 2.

[0028] Figure 10 is a graph showing the results of a full cell charge / discharge test of Example 4.

[0029]

[0030] The following description of the present invention with reference to the drawings is not limited to specific embodiments, and various modifications and embodiments may be made. Furthermore, the following description should be understood to encompass all modifications, equivalents, and alternatives within the spirit and technical scope of the present invention.

[0031] In the following description, terms such as first, second, etc. are used to describe various components, and are not limited in meaning in themselves, but are used only for the purpose of distinguishing one component from another.

[0032] Like reference numbers used throughout this specification represent like components.

[0033] As used herein, singular expressions include plural expressions unless the context clearly dictates otherwise. In addition, terms such as "comprise," "include," or "have" used herein should be interpreted to indicate the presence of a feature, number, step, operation, component, part, or combination thereof described in the specification, and should be understood to not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0034]

[0035] The present invention relates to a silicon anode material for a lithium ion secondary battery manufactured from waste silicon kerf, and can provide a silicon anode material for a lithium ion secondary battery including a plate-like silicon composite in which a composite layer including an oxide layer and a carbon-containing layer is formed on plate-like silicon obtained from waste silicon kerf, an anode including the same, and a lithium ion secondary battery.

[0036]

[0037] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached FIGS. 1 to 10.

[0038] FIG. 4 is an exemplary view showing the appearance of a plate-shaped silicon composite (1) of a silicon anode material for a lithium ion secondary battery according to an embodiment of the present invention, FIG. 1 is an SEM photograph of plate-shaped silicon used in the manufacture of a silicon anode material for a lithium ion secondary battery according to an embodiment of the present invention, FIG. 2 is an exemplary view showing the appearance of an oxide layer formed on the plate-shaped silicon particle of FIG. 1, and FIG. 3 is an exemplary view of plate-shaped silicon particles in which a silicon carbide layer is formed on the oxide layer of FIG. 2.

[0039] Fig. 5 is a TEM photograph of the plate-shaped silicon composite (1) of Fig. 4, and Fig. 6 is a TEM photograph of the plate-shaped silicon on which the silicon carbide layer of Fig. 3 is formed.

[0040] The present invention relates to a silicon anode material having a low unit price using plate-shaped silicon formed by a silicon kerf and having an excellent filling rate by being composited with plate-shaped graphite.

[0041] The waste silicon kerf used in the present invention is generated during the process of thinly slicing a lump of metallic silicon to obtain silicon wafers in the solar cell or semiconductor industry. Here, the waste silicon kerf is high-purity silicon with a purity of 99.9999999% to 99.999999999% used in the solar cell or semiconductor industry, and is separated into a nano-thick plate-like material using a wire-shaped saw. This high-purity plate-like silicon is a good candidate for an anode active material for lithium secondary batteries.

[0042] Referring to FIG. 4, a silicon negative electrode material for a lithium ion secondary battery according to an embodiment of the present invention may include a plate-shaped silicon composite (1).

[0043] The above plate-shaped silicon composite (1) is manufactured from plate-shaped silicon formed by a silicon kerf, and may include plate-shaped silicon particles (10), an oxide layer (11), and a silicon carbide layer (12).

[0044] The plate-shaped silicon (10) used here may be a powder formed in a plate shape, as shown in Fig. 1, and may be formed from waste silicon kerf (cutting fines) generated in the process of thinly slicing a silicon ingot for solar cells or semiconductors.

[0045] There are three or four general methods for cutting silicon ingots, all of which involve sorting, washing, precipitation, and drying steps to produce a waste silicon kerf. To obtain a waste silicon kerf with a high thickness uniformity, it is preferable to use one made using a diamond wire saw, but this is not a limitation.

[0046] Specifically, a diamond wire saw is a method of cutting silicon ingots using water or diethylene glycol as a lubricant by randomly embedding diamond particles on the surface of a carbon steel wire called piano wire, which is approximately 50㎛ in diameter. Silicon ingots include single-crystal ingots and polycrystalline ingots, and all cutting fine particles have the advantage of being suitable for the plate-shaped silicon (10) of the present invention.

[0047] The plate-shaped silicon (10) formed with a silicon kerf can be formed with an average thickness of 10 to 100 nm and an average length of 10 μm or less, preferably 1 to 10 μm.

[0048] Here, if the average thickness of the plate silicon (10) is less than 10 nm, there is too much loss when forming the oxide layer (11), so the initial capacity may not even be 30% of the amount before processing, which may significantly reduce economic feasibility. In addition, if the average thickness exceeds 100 mm, the ratio of the central silicon layer may be high at 80% or more, which may significantly reduce the performance improvement effect.

[0049] In addition, when the average length of the plate-like silicon (10) exceeds 10㎛, when mixed with graphite, a large amount of empty space is formed between the particles of the graphite and plate-like silicon composite (1), so that the porosity in the same space increases and the filling rate decreases, and the discharge capacity in the same volume may drop significantly.

[0050] Plate-shaped silicon (10) is subjected to strong force during the cutting process, causing the silicon to break off from the single crystal into a plate shape, which causes it to bend and curl, and can be formed into a form in which many fine single crystals are weakly attached. Accordingly, the plate-shaped silicon (10) can be made into a state more suitable for use as an anode material through a crushing pretreatment.

[0051] Meanwhile, the plate-shaped silicon (10) can be pretreated, for example, by wet milling and drying.

[0052] At this time, the wet milling method of the plate-shaped silicon (10) may be a bead mill (ball mill), ultrasonic dispersion, or high-pressure homogenizer dispersion method.

[0053] First, the bead mill method is a method in which plate-shaped silicon (10) is mixed in water or an organic solvent in a range of 5 to 30 wt%, and then rotated together with zirconia or alumina beads in a zirconia or alumina container to crush the beads by frictional force and impact force between the balls. It is preferable that the bead mill use beads with a diameter of 0.5 to 3 mm and crush them by rotating them at 1,000 to 5,000 rpm based on a container diameter of 100 mm.

[0054] When using a bead mill, if the diameter of the beads is less than 0.5 mm, the impact force may be weak and crushing may be almost impossible. If it is more than 3 mm, the number of beads may be too small and the probability of collision with the plate-shaped silicon (10) may be reduced, which may unnecessarily lengthen the crushing time.

[0055] In addition, if the rotation speed is less than 1,000 rpm, the energy required for crushing may be insufficient due to low energy, and crushing may not occur at all. If it exceeds 5,000 rpm, excessive high energy may cause bead wear and may mix with plate silicon as impurities.

[0056] The ultrasonic dispersion method is a method of applying ultrasonic vibration to a solution by attaching an amplifying horn and a vibrating horn to an ultrasonic vibrator to disperse or destroy grains in the solution. It is preferable to process plate-shaped silicon (10) under the conditions of a frequency of 20 to 35 KHz, an amplitude of 20 to 200 μm, and a vibrator power consumption of 200 W or more for ultrasonic dispersion. In addition, ultrasonic dispersion is possible by mixing plate-shaped silicon (10) in water or an organic solvent in a range of 30 wt% or less, and then passing the mixture through a path in which multiple vibrators are arranged in a row to receive ultrasonic vibrations from multiple vibrators, thereby crushing the grains.

[0057] At this time, if the vibrator power consumption is less than 200W, the energy consumption may be too low to achieve significant shredding. Furthermore, if the frequency is below 20kHz, operation may be difficult due to the inability to exceed the audible frequency. If the frequency exceeds 35kHz, the durability of the vibrator and vibration generator will be reduced, with no effect on shredding or improving the working environment.

[0058] In addition, when plate-shaped silicone (10) is mixed in water or an organic solvent in an amount exceeding 30 wt%, the viscosity may become too high and the transmission range of ultrasonic vibration may not be wide.

[0059] A high-pressure homogenizer is a device that disperses or destroys powder in a solution by applying pressure using a pump to force the solution through micro-nozzles in opposite directions. There are also methods for using high-pressure homogenizers that combine collisions, such as a method of colliding the solution with a diamond plate after passing through a micro-nozzle, or a method of colliding the solution with each other by passing the nozzles in both directions. In the present invention, it is preferable to use a method in which plate-shaped silicon (10) is mixed in water or an organic solvent in an amount of 30 wt% or less, pressurized to 500 bar or more, passed through micro-nozzles of 50 to 200 μm, and collided with or mutually collided with a diamond plate by a high-pressure homogenizer dispersion method.

[0060] At this time, if the plate-shaped silicon (10) is mixed in water or an organic solvent in an amount exceeding 30 wt%, the viscosity may become too high, making it difficult to inject into a fine nozzle. In addition, if the pressure is less than 500 bar, the collision energy may be weak, making crushing almost impossible.

[0061] In addition, if the micro-nozzle diameter is less than 50㎛, nozzle layer force may occur frequently, making process operation difficult, and if it exceeds 200㎛, the collision energy may be too weak, resulting in almost no crushing.

[0062] In addition, it is preferable that the plate-shaped silicon particles obtained from one of the above bead mills, dispersers and homogenizers are recovered in a dried powder state.

[0063] At this time, various devices with moisture and organic solvent vaporization functions can be used as drying devices, but it is preferable to use a spray dryer or disk dryer.

[0064] Here, the spray dryer is a device that spreads a dispersion solution containing crushed plate-shaped silicon particles (10) into the air through a spray nozzle or a rotating disk nozzle (Atomizer) and injects a heated gas to rotate around the nozzle to dry the solution in a scattered state. This device has the advantage of being able to obtain a dry powder with a low apparent density, but has poor thermal efficiency.

[0065] The disk dryer has high thermal efficiency, and is a method of drying by dropping a dispersion solution containing crushed plate-shaped silicon particles (10) little by little onto a heated rotating disk, and then scraping the crushed and dried plate-shaped silicon particles (10), which are the dried residue, with a ceramic knife to recover them. The disk dryer has high thermal efficiency, but has the disadvantage of recovering powder with a high apparent density.

[0066] Through the above pretreatment process, the plate-shaped silicon particles (10) that have been crushed and dried have the moisture and lubricant in the waste silicon cuff removed, but in order to facilitate reaction with gas in the post-process, the plate-shaped silicon particles (10) can be crushed to form spaces between the particles.

[0067] The crushed and dried plate-shaped silicon particles (10) have an apparent density of 1 to 2 g / cm3, and by crushing them at 3,000 rpm under air, plate-shaped silicon particles (10) having an apparent density of 0.1 to 0.4 g / cm3 can be obtained.

[0068] Accordingly, the average distance between the particles of the crushed plate-shaped silicon particles (10) can be increased by 3 to 10 times compared to the crushed and dried plate-shaped silicon particles (10).

[0069] In this way, by using the plate-shaped silicon (10) in the form of crushed plate-shaped silicon particles (10) rather than using it as is, the oxide layer (11) can be formed more uniformly.

[0070] Referring to Fig. 2, the oxide layer (11) can be formed by oxidizing the surface of the plate-shaped silicon particles (10).

[0071] This oxide layer (11) is formed to solve the problem that silicon fragmentation occurs quickly due to rapid charging and discharging, although the plate-shaped silicon particles (10) have a high surface area of ​​10 m2 / g or more, which ensures a high charge / discharge speed and a large contact area with the electrolyte or electrolyte, and can reduce the charge / discharge speed.

[0072] Specifically, the oxide layer (11) is formed by further oxidizing the natural oxide layer that is naturally formed on the surface of the plate-shaped silicon particles (10), and can be said to be formed thicker than the natural oxide layer.

[0073] At this time, the oxide layer (11) is formed in an amorphous state, and when lithium approaches the oxide layer (11), lithium is filled in the gaps of the oxide layer (11), and an electrically conductive line penetrating the oxide layer (11) can be formed. Accordingly, the oxide layer (11) can allow lithium of the electrolyte or electrolyte to slowly diffuse into the plate-shaped silicon particles (10).

[0074] In this way, by lowering the bonding speed of lithium and plate-shaped silicon particles (10) through the oxide layer (11), the charge capacity is somewhat lower than that of conventional silicon, but the charge / discharge life can be dramatically increased.

[0075] Additionally, the oxide layer (11) may have an average thickness of 2 to 10 nm.

[0076] When the average thickness of the oxide layer (11) is less than 2 nm, a non-uniform oxide layer (11) in the form of dots may be formed on the surface of the plate-shaped silicon particles (10), and as a result, a large number of non-oxidized portions on the surface of the plate-shaped silicon particles (10) occur between the dot-shaped oxide layers (11), and thus the effect of the uniform oxide layer (11) cannot be exhibited. In other words, the life performance improvement effect may not be exhibited as desired.

[0077] In addition, if the oxide layer (11) exceeds 10 nm, the irreversible capacity, which is the main reason for the decrease in the initial discharge capacity, may increase significantly by more than 30%, which may lead to severe lithium consumption.

[0078] Meanwhile, the oxide layer (11) is doped with sulfur, so that the amorphous material is partially oxidized into a crystalline material, thereby improving strength and improving life performance.

[0079] At this time, it may be preferable that the oxide layer (11) be doped with 0.05 to 5 wt% of sulfur. This is because, if it is less than 0.05 wt%, the sulfur doping effect is hardly observed, and if it is more than 5 wt%, residual sulfur is generated and combines with lithium, which may unnecessarily increase the irreversible capacity.

[0080] A silicon carbide layer (12) can be formed on the outer surface of the oxide layer (11) to surround the oxide layer (11). The oxide layer (11) is amorphous and forms a passage for lithium and electrons to move while increasing the irreversible capacity when combined with lithium, but the silicon carbide layer (12) can control the diffusion or movement speed of lithium while forming a passage for lithium and electrons while reducing the increase in irreversible capacity to less than 1 / 10 of the oxide layer. The life performance can be improved through the formation of the silicon carbide layer (12) on the outer surface of the oxide layer (11).

[0081] The thickness of the silicon carbide layer (12) may be 1 to 5 nm. If it is less than 1 nm, it is formed in an uneven dot shape, so the exposed area of ​​the oxide layer (11) is large, making it difficult to expect an improvement in life performance. If it is more than 5 nm, the discharge speed of lithium is greatly reduced compared to when there is no silicon carbide layer (12), which significantly reduces the high-speed charge / discharge performance. Meanwhile, the silicon carbide layer (12) may be doped with sulfur as the residual sulfur of the oxide layer (11) is vaporized.

[0082] The silicon carbide layer (12) formed on the outer surface of the oxide layer (11) can be formed by reducing and carbonizing the oxide layer (11) from the outer surface, and the manufacturing method will be described in more detail below.

[0083] Referring to FIG. 1 and FIG. 6, a carbon coating layer (13) can be formed by coating a silicon carbide layer (12) on the outer surface of a plate-shaped silicon particle (10) with conductive carbon to surround the layer.

[0084] This carbon coating layer (13) is formed to provide electrical conductivity and smooth electron flow to the oxide layer (11), which is an insulating layer, and the silicon carbide layer (12), which is an electrically conductive layer. That is, the carbon coating layer (12) plays a role in maintaining the formation amount and formation relationship of SEI (Solid electrolyte interface), which is the interface between graphite and the electrolyte (or electrolyte) in a conventional lithium ion secondary battery, and can eliminate the inconvenience of having to change the electrolyte (or electrolyte) due to a change in material.

[0085] The carbon coating layer (13) can be formed by supplying one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas to plate-shaped silicon particles on which a silicon carbide layer (12) has been formed using a rotary kiln or a kiln, and thermally decomposing the same at 750 to 1000°C. The manufacturing method will be described in more detail below.

[0086] In addition, the carbon coating layer (13) has a crystallinity of less than 10 layers of average graphite layers and may have an average thickness of 3 to 20 nm.

[0087] At this time, if the average thickness of the carbon coating layer (13) is less than 3 nm, the carbon coating layer (13) is formed unevenly in the form of dots on the surface, so that many uncoated areas occur, and the lifespan improvement effect may not be significant. If it exceeds 20 nm, excessive coating may cause many pores to form inside the carbon coating layer (13), so that lithium fills the pores and does not escape again, and the irreversible capacity may increase significantly.

[0088] Meanwhile, the carbon coating layer (13) can be doped with sulfur as the residual sulfur in the oxide layer (11) and silicon carbide layer (12) is vaporized.

[0089] At this time, it may be preferable that the carbon coating layer (13) be doped with 0.01 to 1 wt% of sulfur. This is because, if it is less than 0.01 wt%, the sulfur doping effect is hardly observed, and if it is more than 1 wt%, residual sulfur is generated and combines with lithium, which may unnecessarily increase the irreversible capacity.

[0090] As described above, the silicon anode material for a lithium-ion secondary battery composed of a plate-shaped silicon composite (1) can have electrical conductivity improved by 3 to 30% compared to existing anode materials for lithium-ion secondary batteries.

[0091] Additionally, silicon anode materials for lithium-ion secondary batteries may further contain graphite.

[0092] Here, graphite is a plate-shaped material, and even when spherical, empty space is formed.

[0093] Accordingly, by mixing graphite and a plate-like silicon composite (1) to form a silicon anode material for a lithium-ion secondary battery, the plate-like silicon composite (1) fills the empty space of the graphite, thereby preventing the entire electrode from expanding due to expansion when lithium is combined, and maintaining electrical connection with the electrode due to shrinkage. In other words, the plate-like silicon composite (1) is combined in the empty space of the graphite, thereby preventing separation from the electrode when expanded by lithium. At this time, the empty space of the graphite acts as a buffer space.

[0094] Here, there are two possible methods for mixing the plate-like silicon composite (1) of the silicon negative electrode material for lithium-ion secondary batteries and graphite: 1) a method of introducing the plate-like silicon composite (1) during the process of spheroidizing graphite, and 2) a method of mixing the plate-like silicon composite (1) and graphite that have completed the spheroidizing or spheroidizing process.

[0095] 1) When manufacturing a silicon anode material for a lithium-ion secondary battery by inserting a plate-shaped silicon complex (1) in the process of spheroidizing graphite, a spheroidized silicon anode material for a lithium-ion secondary battery in the form of spheroidized or spheroidized graphite can be formed by inserting the plate-shaped silicon complex (1) between the graphite plates.

[0096] On the other hand, 2) when manufacturing a silicon anode material for a lithium-ion secondary battery by mixing a graphite and a plate-shaped silicon complex (1) that have undergone a spheroidization or spheroidization process, a silicon anode material for a lithium-ion secondary battery in a simple mixed form in which the plate-shaped silicon complex (1) is arranged between graphite can be formed.

[0097] At this time, the plate-shaped silicon composite (1) and graphite can be mixed in a weight ratio of 1 to 20:80 to 99, and more preferably, can be mixed in a weight ratio of 10:90.

[0098] At this time, if the content of the plate-shaped silicon composite (1) is lower than 1 wt%, the effect of increasing the charging capacity of the silicon anode material due to graphite mixing is within the charging capacity deviation, making it difficult to determine the effect. If it exceeds 20 wt%, the number of silicon particles becomes significantly greater than the number of graphite particles, which may reduce the uniform dispersion effect between the silicon particles and the graphite.

[0099]

[0100] A method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to the above-described embodiment of the present invention will be described below.

[0101]

[0102] FIG. 7 is a flow chart schematically illustrating a method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to an embodiment of the present invention, and FIG. 8 is a flow chart further including a pretreatment step, a doping step, a secondary disintegration step, and a silicon carbide formation step in FIG. 7.

[0103] Referring to FIG. 7, a method for manufacturing a silicon negative electrode material for a lithium ion secondary battery according to an embodiment of the present invention may include a first disintegration step (S10), an oxidation step (S20), a silicon carbide layer formation step (S30), and a carbon coating step (S40).

[0104] The first disintegration step (S10) can make the plate-shaped silicon (10) formed by the silicon kerf into plate-shaped silicon (10) having an apparent density of 0.1 to 0.4 g / cm3.

[0105] Plate-shaped silicon (10) is subject to bending and rolling during the cutting process, as the silicon is separated from the single crystal into a plate-shaped form when a strong force is applied, and can be formed into a form in which many fine single crystals are weakly attached. Therefore, it is necessary to break up the plate-shaped silicon (10).

[0106] At this time, as illustrated in FIG. 8, the method for manufacturing a silicon negative electrode material for a lithium ion secondary battery of the present invention may include a pretreatment step (S1) prior to the first disintegration step (S10).

[0107] The pretreatment step (S1) can be used to wet-mill and dry plate-shaped silicon (10) before the first crushing step (S10) to produce crushed plate-shaped silicon particles.

[0108] Through this pretreatment step (S1), moisture and lubricant in the waste silicon cuff are removed from the crushed and dried plate-shaped silicon particles (10). However, in order to facilitate reaction with gas in the post-process, the crushed and dried plate-shaped silicon particles (10) are crushed in the first crushing step (S10) to form spaces between the particles.

[0109] The crushed and dried plate-shaped silicon particles (10) have an apparent density of 1 to 2 g / cm3, and by crushing them at 3,000 rpm under air in the first crushing step (S10), plate-shaped silicon particles (10) having an apparent density of 0.1 to 0.4 g / cm3 can be obtained.

[0110] Accordingly, the average distance between the particles of the crushed plate-shaped silicon particles (10) can be increased by 3 to 10 times compared to the crushed and dried plate-shaped silicon particles (10). Therefore, the first crushing step (S10) can enable the oxidation layer (11) to be uniformly formed in the subsequent oxidation step (S20).

[0111] The oxidation step (S20) can oxidize the surface of the plate-shaped silicon particles (10) to form an oxide layer (11).

[0112] The oxidation step (S20) can further oxidize the naturally formed natural oxide layer on the surface of the plate-shaped silicon particles (10) to form a thick oxide layer.

[0113] The oxidation step (S20) can be performed by injecting an oxidizing agent into the plate-shaped silicon particles (10) using a rotary kiln and heating them to 700 to 1,100°C.

[0114] At this time, if the heating temperature is less than 700°C, the formation speed of the oxide layer (11) becomes too slow, and as the reaction time becomes excessively long, the oxide layer (11) may not be formed entirely or may be difficult to form to the desired thickness, and if it exceeds 1,100°C, the plate-shaped silicon particles (10) may be damaged by the excessive temperature or the process cost may increase unnecessarily, which may be inefficient.

[0115] Here, the oxidizing agent may be one or more of oxygen, water, and hydrogen peroxide, and the heating temperature may be controlled depending on the type of oxidizing agent.

[0116] Specifically, when hydrogen peroxide is used as an oxidizing agent, it can be heated to 700 to 1,100°C, and when oxygen is used as an oxidizing agent, it can be heated to 900 to 1,100°C.

[0117] Here, the rotary kiln uses a continuous heating furnace, so it has high thermal efficiency and can shorten the working time. The rotary kiln is composed of an inlet for feeding the material to be treated into the kiln body, a heat treatment section having a kiln body for heating, and a discharge section for discharging the heated material to be treated. Since the material to be treated is continuously mixed and moved in the rotary kiln, a uniform and thick oxide layer (11) is formed, and the difference in the ratio of the oxide layer (11) between particles can be reduced.

[0118] The silicon carbide layer (12) formation step (S30) can create an electrically conductive silicon carbide layer (12) by replacing some of the oxygen in the oxide layer with carbon.

[0119] The silicon carbide layer (12) formed on the outer surface of the oxide layer (11) is made by replacing two oxygen atoms of silicon oxide with one carbon atom from the outermost surface of the oxide layer (11). There are two possible methods for replacing silicon oxide with silicon carbide. One is to mix crystalline silicon oxide with pitch and heat it at 1200 to 1400 degrees for a long time to replace carbon with a stronger bond to silicon, and then burn the residual carbon. The other is to heat amorphous silicon oxide with pitch or another carbon source at 1000 degrees or more for a long time to replace oxygen attached to silicon with carbon with a stronger bond to silicon, and then burn the residual carbon.

[0120] In this technology, it was discovered that the outer shell of amorphous silicon oxide of 1 to 5 nm can be rapidly replaced even at a lower temperature when reacted with gasified carbon, and this was applied. When silicon particles (10) on which an oxide layer (11) of 2 to 20 nm in thickness is formed by the above oxidation process are passed through a kiln heated to 900 to 1100°C and hydrocarbon gas is flowed into the same reactor, the hydrocarbon is decomposed so that carbon atoms approach the oxide layer (11), and the outermost oxygen of the amorphous oxide layer (11) is replaced with carbon even at a relatively low temperature of 900°C. Due to the characteristics of the amorphous layer, carbon with a small atomic size can easily penetrate, so replacement is possible at a high speed up to a depth of 5 nm.

[0121] The hydrocarbon gases available at this time are C2H2 (acetylene), C2H6 (ethane), C2H4 (ethylene), CH4 (methane), C3H8 (propane), C4H 10 (Butane), C3H6 (propylene), C4H8 (butylene), etc. can be used. Hydrocarbon gas can be used by vaporizing hydrocarbon solutions composed of C, H, O, such as ethanol, methanol, and toluene.

[0122] The method for confirming whether a silicon carbide layer (12) has been formed can be as follows: particles that have completed the silicon carbide layer (12) formation step are heated at 800 degrees in an oxygen atmosphere to burn off all residual carbon, and the resultant result is confirmed by detecting silicon carbide in the outermost layer. From the inside to the outside, silicon (10), silicon oxide layer (11), and silicon carbide layer (12) remain in that order, and this can be confirmed by transmission electron microscopy or electron microscopy analysis after ion milling.

[0123] The carbon coating step (S40) can form a plate-shaped silicon composite (1) having a carbon coating layer (13) formed by coating the surface of plate-shaped silicon particles (10) on which a silicon carbide layer (11) is formed with conductive carbon. The carbon coating step (S40) can provide uniform electrical conductivity and smooth electron flow to the surface of plate-shaped silicon particles having a core-shell structure by forming a carbon coating layer (13) on the surface of plate-shaped silicon particles (10). The core is a plate-shaped silicon particle (10), and the shell is composed of an oxide layer (11), a silicon carbide layer (12), and a carbon coating layer (13).

[0124] The carbon coating step (S40) can be performed by selectively adding one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas to plate-shaped silicon particles on which an oxide layer (11) or a silicon carbide layer (12) is formed using a rotary kiln or a kiln, and thermally decomposing the particles at 750 to 1000°C.

[0125] Here, hydrocarbon gas is a gas composed of carbon and hydrogen bonds, such as C2H2 (acetylene), C2H6 (ethane), C2H4 (ethylene), CH4 (methane), C3H8 (propane), C4H 10 (Butane), C3H6 (propylene), C4H8 (butylene), etc. can be used. Hydrocarbon gas can be produced by vaporizing and thermally decomposing hydrocarbon solutions composed of C, H, O, such as ethanol, methanol, and toluene.

[0126] The carbon coating step (S40) preferably forms a carbon coating layer (13) by thermally decomposing plate-shaped silicon particles (10) on which an oxide layer (11) or a silicon carbide layer (12) is formed using ethylene gas as a hydrocarbon gas at 750 to 800°C, or by thermally decomposing plate-shaped silicon particles (10) on which an oxide layer (11) or a silicon carbide layer (12) is formed using liquefied natural gas at 950 to 1,000°C, but is not limited thereto.

[0127] When using ethylene gas, if the temperature is below 750℃, the decomposition rate is less than 50%, resulting in unnecessary consumption of gas. If the temperature exceeds 800℃, the decomposition rate becomes faster, which can produce a large amount of unnecessary byproduct called carbon black.

[0128] When using liquefied natural gas, if the temperature is below 950℃, the decomposition rate is less than 30%, which results in unnecessary consumption of gas, and if it exceeds 1000℃, the decomposition rate becomes faster, which can produce a large amount of unnecessary byproduct called carbon black.

[0129] Additionally, the method for manufacturing a silicon negative electrode material for a lithium ion secondary battery may further include a doping step (S22) after the oxidation step (S20).

[0130] In the oxidation step (S20) described above, the oxide layer (11) has good lithium permeability, so it is necessary to improve the strength of the oxide layer (11). To this end, the doping step (S22) may dope sulfur into the oxide layer (11) after the oxidation step (S20).

[0131] The doping step (S22) can be performed by mixing 0.05 to 5 wt% of sulfur powder with respect to the total weight of the plate-shaped silicon particles (10) on which the oxide layer (11) is formed using a dry mixer.

[0132] At this time, if the sulfur powder is less than 0.05 wt%, the sulfur doping effect is hardly observed, and if it exceeds 5 wt%, residual sulfur that does not participate in the reaction is generated, and the residual sulfur may combine with lithium, unnecessarily increasing the irreversible capacity.

[0133] The doping step (S22) can be performed by passing the plate-shaped silicon particles (10) on which the oxide layer (11) is formed and the sulfur powder through a rotary kiln at 600 to 1,000°C. In the doping step (S22), sulfur is vaporized at high temperature, and some of the vaporized sulfur penetrates into the gaps of the oxide layer (11) to form covalent bonds with silicon and oxygen, and another part sticks to the surface of the oxide layer (11) when cooled, and another part can be vaporized.

[0134] If the doping temperature is less than 600℃, doping does not occur and the doping effect is barely noticeable. If it exceeds 1000℃, a reaction may occur in the transparent ceramic tube, rapidly changing the ceramic tube to opaque and significantly reducing its service life.

[0135] The doping step (S22) can improve the strength and life performance of the oxide layer (11) by doping sulfur on the outer surface of the oxide layer (11) to partially change the amorphous state of the oxide layer (11) into a crystalline state.

[0136] Through the doping step (S22) as described above, 0.05 to 5 wt% of sulfur can be doped into the oxide layer (11). If sulfur is added in an amount exceeding the amount required for doping within 0.05 to 5 wt% in the doping step (S22), the sulfur attached to the surface of the oxide layer (11) can be vaporized in the subsequent silicon carbide layer forming step (S30) and carbon coating step (S40), thereby forming a silicon carbide layer (12) and a carbon coating layer (13), and sulfur can be doped into the silicon carbide layer (12) and the carbon coating layer (13).

[0137] Specifically, in the doping step (S22), sulfur that is excessively added remains as sulfur powder on the surface of the oxide layer (11), and in the silicon carbide layer forming step (S30) and the carbon coating step (S40), sulfur powder on the surface of the oxide layer (11) is vaporized, so that sulfur can be doped and inserted between carbon atoms when forming the silicon carbide layer (12) and the carbon layer (13).

[0138] At this time, it is preferable that the silicon carbide layer (12) and the carbon layer (12) are doped with 0.01 to 1 wt% of sulfur, respectively. This is because if it is less than 0.01 wt%, the doping effect of sulfur is hardly observed, and if it is more than 1 wt%, residual sulfur is generated and may combine with lithium, unnecessarily increasing the irreversible capacity.

[0139] The silicon carbide layer formation step (S30) and the carbon coating step (S40) can be formed step by step by separating the steps and passing the kiln through each step. The silicon carbide layer (12) and the carbon layer (13) can also be formed simultaneously. Similarly, doping with residual sulfur in the oxide layer (11) can also be performed simultaneously.

[0140] First, the case where the silicon carbide layer formation step (S30) and the carbon coating step (S40) are performed separately will be described.

[0141] The silicon carbide layer formation step (S30) passes the plate-shaped silicon particles on which the oxide layer (11) is formed through a kiln at 900 to 1100°C, and C2H2 (acetylene), C2H6 (ethane), C2H4 (ethylene), CH4 (methane), C3H8 (propane), C4H decompose at 900°C. 10 When a small amount of vaporized gas such as a hydrocarbon gas (butane), C3H6 (propylene), C4H8 (butylene), or a hydrocarbon solution composed of C, H, O such as ethanol, methanol, and toluene is injected, a silicon carbide layer (12) is formed. At this time, the residence time at 900 degrees or higher is suitable for 1 to 30 minutes, and if it is less than 1 minute, the inside of the plate-shaped silicon particles that move by being electrostatically agglomerated is not heated evenly, making it difficult to uniformly form a silicon carbide layer (12) between the particles, and if it is more than 30 minutes, the thickness increase rate of the silicon carbide layer (12) drops significantly, resulting in a significant decrease in production economy.

[0142] The carbon coating step (S40) passes the plate-shaped silicon particles on which the silicon carbide layer (12) is formed through a kiln at 750 to 1,000°C to form C2H2 (acetylene), C2H6 (ethane), C2H4 (ethylene), CH4 (methane), C3H8 (propane), C4H 10 When a large amount of gaseous hydrocarbon gas such as (butane), C3H6 (propylene), C4H8 (butylene), or a hydrocarbon solution composed of C, H, O such as ethanol, methanol, and toluene is injected, a carbon layer (13) is formed.

[0143] This describes a case where the silicon carbide layer formation step (S30) and the carbon coating step (S40) are performed simultaneously.

[0144] Plate-shaped silicon particles on which an oxide layer (11) has been formed are passed through a kiln at 900 to 1100°C, and decomposition occurs at 900°C or higher to produce C2H2 (acetylene), C2H6 (ethane), C2H4 (ethylene), CH4 (methane), C3H8 (propane), and C4H. 10 (butane), C3H6 (propylene), C4H8 (butylene), etc. When a large amount of vaporizing gas is injected into a hydrocarbon solution composed of C, H, O such as ethanol, methanol, and toluene, a silicon carbide layer (12) is formed first, and then an excess of carbon is accumulated to form a carbon layer (13). The formation speed of the silicon carbide layer (12) is slower than that of the carbon layer (13), so that the residence time at 900 degrees or higher is based on the residence time standard of the silicon carbide layer formation step (S30). More preferably, it is good to use a hydrocarbon having a carbon atomic ratio of 20% or less among hydrocarbons such as CH4 (methane), ethanol, and methanol at 950 to 1100 degrees Celsius to delay the recombination time of the carbon and make the penetration of the oxide layer easier. Recombination time refers to the time it takes for five or more carbon atoms to clump together and convert to carbon black or graphene structure through thermal decomposition of hydrocarbon molecules.

[0145] Additionally, the method for manufacturing a silicon negative electrode material for a lithium ion secondary battery may further include a secondary disintegration step (S24) after the oxidation step (S20).

[0146] The secondary disintegration step (S24) can crush and reduce the density of the plate-shaped silicon particles (10) on which an oxide layer (11) has been formed after the oxidation step (S20). The secondary disintegration step (S24) can crush the plate-shaped silicon particles (10) on which an oxide layer (11) has been formed together with air in a pin mill with a radius of 110 to 130 mm and a speed of 3300 to 3500 rpm.

[0147] This secondary disintegration step (S24) separates the plate-shaped silicon particles (10) on which the coagulated oxide layer (11) has been formed, and, like the primary disintegration step (S10), the particles can have an apparent density of 0.1 to 0.4 g / cm3. Accordingly, the secondary disintegration step (S24) can enable the silicon carbide layer (12) to be uniformly formed in the subsequent silicon carbide layer forming step (S30).

[0148] In addition, the method for manufacturing a silicon negative electrode material for a lithium ion secondary battery may further include a mixing step with graphite after the carbon coating step (S40).

[0149] The graphite and mixing step can be performed after the carbon coating step (S40) by mixing the plate-shaped silicon composite (1) and graphite to manufacture a silicon anode material for a spherical lithium-ion secondary battery or a silicon anode material for a simple lithium-ion secondary battery.

[0150] In the graphite and mixing step, the plate-shaped silicon complex (1) can be added during the process of spheroidizing graphite, or the graphite and plate-shaped silicon complex (1) that have completed the spheroidizing or spheroidizing process can be mixed.

[0151] Specifically, when a plate-shaped silicon complex (1) is introduced in the process of spheroidizing graphite in the mixing step with graphite, a spheroidized silicon negative electrode material for a lithium-ion secondary battery in the form of spheroidized or spheroidized graphite can be manufactured by inserting the plate-shaped silicon complex (1) between the graphite plates.

[0152] On the other hand, when a graphite and plate-shaped silicon composite (1) that have undergone a spheroidization or spheroidization process in the mixing step are mixed, a silicon negative electrode material for a simple lithium-ion secondary battery can be manufactured in the form of a plate-shaped silicon composite (1) arranged between graphite.

[0153] At this time, the graphite goes through a spheroidization or spheroidization process, because spheroidal graphite has low anisotropy, which is advantageous in maintaining uniformity of voltage and current distribution. On the other hand, flake-shaped graphite has poor processability due to reduced fluidity during the subsequent mixing and slurrying process with a solvent or binder due to the anisotropy of the material itself, and problems such as peeling may occur due to difficulty in forming a coating layer of a certain thickness. Generally, the spheroidization process can be spheroidized by removing rough parts of the flake-shaped carbon material through mechanical rotational motion and smoothing the particle surface.

[0154]

[0155] The silicon anode material for a lithium ion secondary battery of the present invention described above forms a multilayer structure including an oxide layer and a carbon-containing layer on a plate-like silicon formed with a waste silicon kerf, so that when combined with graphite, the filling rate is excellent and more lithium can be charged based on the same volume, and the cost-effectiveness is also excellent due to the use of a waste silicon kerf.

[0156]

[0157] According to one embodiment of the present invention, a lithium ion secondary battery including a negative electrode, a positive electrode, a separator, and an electrolyte including a silicon negative electrode material for a lithium ion secondary battery of the present invention may have an initial discharge capacity of 400 mAh / g or more, a residual capacity (discharge capacity) at 300 cycles may be 340 to 360 mAh / g at 85% or more, and a residual capacity (discharge capacity) at 500 cycles may be 300 to 330 mAh / g at 75% or more.

[0158] According to another embodiment of the present invention, a lithium ion secondary battery including a negative electrode, a positive electrode, a separator, and an electrolyte, which includes a silicon negative electrode material for a lithium ion secondary battery in which at least one layer of an oxide layer, a silicon carbide layer, and a carbon coating layer is sulfur-doped, has an initial discharge capacity of 400 mAh / g or more, and a residual capacity (discharge capacity) at 300 cycles of 88% or more, preferably 89% or more, which may be 360 ​​to 380 mAh / g, and a residual capacity (discharge capacity) at 500 cycles of 80% or more, preferably 81% or more, which may be 320 to 350 mAh / g.

[0159] In this way, the silicon anode material for a lithium ion secondary battery of the present invention has a low rate of decrease compared to the initial capacity during charge and discharge, and when sulfur is doped into the oxide layer of the silicon anode material, a significantly improved discharge capacity can be expected even in the same cycle.

[0160]

[0161] Hereinafter, the present invention will be described in more detail by way of examples, but these are only intended to illustrate preferred embodiments of the present invention, and the examples do not limit the scope of the present invention.

[0162]

[0163] [Example]

[0164] [Example 1]

[0165] A polycrystalline silicon ingot was cooled, lubricated, and cut with a 50-㎛ diameter diamond wio saw using a mixture of water and diethylene glycol to recover 5,000 ml of a 5% plate-shaped silicon mixture solution. The dispersion solution was injected at a rate of 20 ml / min into an atomizer disc rotating at 15,000 rpm in a spray dryer and dried at 180°C to obtain plate-shaped silicon particles. Low-density plate-shaped silicon particles were produced by pulverizing them with air in a pin mill with a radius of 120 mm and 3,400 rpm. The plate-shaped silicon particles were oxidized by bubbling and injecting hydrogen peroxide with nitrogen while maintaining them in a rotary kiln at 800°C for 10 minutes, thereby forming an oxide layer. The plate-shaped silicon particles with the oxide layer formed were then maintained in a rotary kiln at 950°C for 20 minutes while methane gas was injected at a rate of 0.1 M / min. A plate-shaped silicon composite was created by replacing the surface of the oxide layer by injecting it at a high speed to form a silicon carbide layer, and allowing the residual carbon to cover the outer shell of the silicon carbide layer to form a carbon layer.

[0166] The manufactured plate-shaped silicon composite was mixed with a binder and a conductive agent, applied to copper foil, and punched into a square shape. To create a battery cell, the anode was made of aluminum foil coated with NCM811 and punched into a square shape. A separator and electrolyte were placed between the anode and cathode, vacuum-packed in an aluminum pouch, and assembled into a full-cell lithium-ion battery.

[0167]

[0168] [Example 2]

[0169] The plate-shaped silicon composite and spheroidized graphite manufactured in Example 1 were placed in a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a silicon anode material for a lithium-ion secondary battery.

[0170] A full-cell lithium-ion battery was manufactured using the silicon negative electrode material for the lithium-ion secondary battery in the same manner as in Example 1.

[0171]

[0172] [Example 3]

[0173] In Example 1, 1 wt% of sulfur powder was mixed into the plate-like silicon particles formed with an oxide layer, and the resultant particles were kept in a rotary kiln at 800°C for 10 minutes to dope the surface of the oxide layer with sulfur. The plate-like silicon particles formed with the doped oxide layer were kept in a rotary kiln at 950°C for 20 minutes, and methane gas was injected at a rate of 0.1 M / min. to displace the surface of the oxide layer, thereby forming a silicon carbide layer doped with sulfur. When the residual carbon covered the outer shell of the silicon carbide layer to form a carbon layer, the vaporized sulfur was doped, thereby forming a plate-like silicon composite having a carbon layer doped with sulfur.

[0174] A full-cell lithium-ion battery was manufactured using the above plate-shaped silicon composite in the same manner as in Example 1.

[0175]

[0176] [Example 4]

[0177] The plate-shaped silicon composite and spheroidized graphite manufactured in Example 3 were placed in a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a silicon negative electrode material for a lithium-ion secondary battery.

[0178] A full-cell lithium-ion battery was manufactured using the silicon negative electrode material for the lithium-ion secondary battery in the same manner as in Example 1.

[0179]

[0180] [Experimental Example 1] Charge / Discharge Performance Evaluation

[0181] To evaluate the charge / discharge performance of the full cells manufactured in Examples 1 to 4, the capacity and lifespan were measured.

[0182] At this time, the capacity was measured under the condition of 1C of charge / discharge current at 25℃, and the lifespan was measured up to 500 cycles under the condition of 1C of charge / discharge current at 25℃.

[0183] The results are shown in Figures 9 and 10.

[0184] Example 2 exhibited a high discharge capacity of 413.4 mAh / g in the first cycle test, and showed a capacity decrease close to linear as the cycle progressed, and showed a residual capacity of 85.2% (352.4 mAh / g) in the 300th cycle and a residual capacity of 76.8% (317.4 mAh / g) in the 500th cycle (Fig. 9).

[0185] Example 4 was mixed with graphite in the same ratio as Example 2, but showed a high discharge capacity of 412.2 mAh / g in the first cycle test, and as the cycle progressed, it showed a capacity decrease close to linear, and at 300 cycles, it showed 89.5% of residual capacity (368.7 mAh / g) and at 500 cycles, it showed 81.6% of residual capacity (336.1 mAh / g) (Fig. 10).

[0186] In other words, by doping sulfur into the oxide layer, the discharge capacity and life performance (maintaining a residual capacity of 81-82% at 500 cycles) could be further improved in the same cycle, and the initial capacity decrease rate within 30 cycles could also be reduced.

[0187]

[0188] Although the embodiments of the present invention have been described with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without altering the technical spirit or essential features of the present invention. Therefore, the embodiments described above are illustrative in all respects and are not limiting.

[0189]

[0190] [Explanation of symbols]

[0191] 1: Plate-shaped silicone composite

[0192] 10: Plate-shaped silicone

[0193] 11: Oxide layer

[0194] 12: Silicon carbide layer

[0195] 13: Carbon coating layer

Claims

1. A silicon anode material for a lithium ion secondary battery comprising a plate-shaped silicon composite manufactured from plate-shaped silicon formed with a silicon kerf, The above plate-shaped silicon composite is, Plate-shaped silicon particles formed from silicon kerf; An oxide layer formed by oxidizing the surface of the above plate-shaped silicon particles; A silicon carbide layer formed on the outer surface of the oxide layer; and A carbon coating layer formed by coating with conductive carbon to surround the above silicon carbide layer; A silicon negative electrode material for a lithium ion secondary battery.

2. In paragraph 1, A silicon negative electrode material for a lithium ion secondary battery, characterized in that the above plate-shaped silicon has an average thickness of 10 to 100 nm and an average length of 10 μm or less.

3. In paragraph 1, A silicon negative electrode material for a lithium ion secondary battery, characterized in that the above oxide layer has an average thickness of 2 to 10 nm.

4. In paragraph 1, A silicon negative electrode material for a lithium ion secondary battery, characterized in that the silicon carbide layer has an average thickness of 1 to 5 nm.

5. In paragraph 4, A silicon negative electrode material for a lithium ion secondary battery, characterized in that the silicon carbide layer is formed by replacing some of the oxygen in the oxide layer with carbon.

6. In paragraph 1, A silicon negative electrode material for a lithium ion secondary battery, characterized in that the carbon coating layer has an average thickness of 3 to 20 nm.

7. In paragraph 1, A silicon anode material for lithium-ion secondary batteries containing more graphite.

8. A negative electrode comprising a silicon negative electrode material for a lithium ion secondary battery of paragraph 1.

9. A lithium ion secondary battery comprising the negative electrode of clause 8.

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