Micro-current photon sensing detection device and method using 5ma-type micro-current photon sensing NV quantum sensor

Abstract

The present invention relates to a micro-current photon sensing detection device and method using a 5mA-type micro-current photon sensing NV quantum sensor, the device comprising: a power supply unit (100); a quantum dot qubit control signal generation module (200); a multi-channel pulse waveform generation control module (300); a bias magnetic field formation control module (400); a green laser generation control module (500); a microwave signal generation module (600); a micro-current sensing NV quantum sensor module (700); an optical fiber unit (800); a photodiode unit (900); and a micro-current photon analysis control module (900a), thereby supporting a wide frequency range to 10 GHz in DC through the quantum dot qubit control signal generation module.

Description

Microcurrent photon sensing detection device and method using a 5MA type microcurrent photon sensing NV quantum sensor

[0001] The present invention relates to a microcurrent photon sensing detection device and method using a 5mA type microcurrent photon sensing NV quantum sensor that can detect a microcurrent frequency of 5mA or less by sensing it as a microcurrent photon through an NV center (Nitrogen-Vacancy center) formed on one side of an electronic component through which current flows, such as a busbar of an electric vehicle battery or a wire of a wiring board, and composed of nitrogen atoms and vacancy defects in a diamond lattice structure.

[0002] Accurately measuring power flow is crucial to increasing power system efficiency, ensuring stability, and minimizing energy losses.

[0003] Conventional power flow measurement devices have utilized resistance-based current detectors, Hall-effect sensors, current transformers (CTs), and current sensors. However, these devices have limitations in detecting microcurrents below 5 mA. Microcurrent signals are extremely weak and easily distorted by external electromagnetic interference or thermal noise, making it difficult to precisely detect minute current changes. Consequently, it has been difficult to achieve the required level of measurement accuracy for microcurrents below 5 mA.

[0004] In addition, existing current sensors can only measure in a specific frequency band, so there was a problem in that they could not detect changes in microcurrents that occurred in various frequency ranges.

[0005] In addition, high-performance processing systems and high-sensitivity sensors are required to detect and analyze microcurrent changes in real time. However, existing technologies have difficulty meeting these requirements, limiting the monitoring of real-time current usage patterns and early detection of abnormal signs.

[0006] In particular, for electric vehicle batteries, which are one of the electronic components, it is important to precisely grasp information about the charge and discharge cycle. However, existing current sensors for high current have low resolution and measure discharge current with an error range of about 10%, which is a factor that reduces the accuracy of estimating the state of charge or driving distance.

[0007] In order to solve the above problems, the present invention provides a microcurrent photon sensing detection device and method using a 5mA type microcurrent photon sensing NV quantum sensor.

[0008] Specifically, by supporting a wide frequency range from DC to 10 GHz through a quantum dot qubit control signal generation module, a microcurrent photon sensing detection device and method using a 5 mA type microcurrent photon sensing NV quantum sensor that operates stably in various frequency environments are provided.

[0009] In addition, a multi-channel pulse waveform generation control module is configured to maximize the scalability of a complex quantum system, and a microcurrent photon sensing detection device and method using a 5mA type microcurrent photon sensing NV quantum sensor capable of simultaneously controlling and processing more quantum dot qubits are provided.

[0010] In addition, by applying the microcurrent sensing NV quantum sensor module to an electronic component through which current flows (e.g., a busbar of an electric vehicle battery, a wire of a distribution panel, etc.), a microcurrent photon sensing detection device and method utilizing a 5mA type microcurrent photon sensing NV quantum sensor capable of detecting a microcurrent in the range of 1mA to 5mA as a high-sensitivity photon signal (i.e., a fluorescence signal) are provided.

[0011] In addition, the present invention provides a microcurrent photon sensing detection device and method utilizing a 5mA type microcurrent photon sensing NV quantum sensor that integrates the reading and analysis functions of quantum dot qubits, which previously required multiple devices, into a single module through a microcurrent photon analysis control module, thereby generating an immediate analysis and response signal according to the conditions of the system or device in the field.

[0012] In order to achieve the above purpose, a microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention is formed on one side of an electronic component through which current flows, and is configured to sense and detect a microcurrent frequency of 5mA or less as a photon signal through an NV center composed of nitrogen atoms and vacancy defects in a diamond lattice structure.

[0013] More specifically, a power supply unit (100) that supplies power to each device;

[0014] A quantum dot qubit control signal generation module (200) that generates a quantum dot qubit control signal in the range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth, thereby controlling a quantum dot qubit within a microcurrent sensing NV quantum sensor module;

[0015] A multi-channel pulse waveform generation control module (300) connected to a microcurrent sensing NV quantum sensor module and controlling output by generating a pulse waveform that controls the energy level and cross coupling of a quantum dot qubit;

[0016] A bias magnetic field formation control module (400) that modulates a bias magnetic field (Bz) with a time-varying voltage to generate an output signal so that a microcurrent photon (fluorescence signal) generated by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module is output in the direction of a photodiode, and controls the bias magnetic field movement current through PID loop control;

[0017] A green laser generation control module (500) located on one side of a microcurrent sensing NV quantum sensor module generates a 532 nm green laser to stimulate a diamond-based NV center of the microcurrent sensing NV quantum sensor module, thereby transitioning the diamond-based NV center to a high energy state, thereby generating a microcurrent photon (fluorescence signal) detectable by a photodiode, and controlling the electron spin state to be initialized;

[0018] A microwave signal generation module (600) that sends a microwave signal in the direction of a microcurrent sensing NV quantum sensor module to control the spin switching of a quantum dot qubit of a diamond-based NV center;

[0019] A microcurrent sensing NV quantum sensor module (700) formed on one side of an electronic component and detecting the frequency of a microcurrent as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond;

[0020] An optical fiber section (800) that is in contact with a microcurrent sensing NV quantum sensor module and collects microcurrent photons (fluorescence signals) sensed from the microcurrent sensing NV quantum sensor module and transmits them toward a photodiode section;

[0021] A photodiode section (900) that detects microcurrent photons (fluorescence signals) emitted from an optical fiber section;

[0022] It is characterized by comprising a microcurrent photon analysis control module (900a) that collects microcurrent photons received from a photodiode section, compares and analyzes them with a standard microcurrent photon spectrum set in advance, monitors power usage patterns and abnormal signs, and creates a prediction model based on the collected microcurrent photons.

[0023]

[0024] In order to achieve the above purpose, the microcurrent photon sensing detection method using the 5mA type microcurrent photon sensing NV quantum sensor according to the present invention is,

[0025] Step (S10) of supplying power to each device through the power supply;

[0026] A step (S20) of controlling a quantum dot qubit, which is a component of a microcurrent sensing NV quantum sensor module, by generating a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth through a quantum dot qubit control signal generation module;

[0027] A step (S30) of generating a pulse waveform that controls the quantum dot qubit energy level and cross coupling in the direction of a microcurrent sensing NV quantum sensor module through a multi-channel pulse waveform generation control module and controlling the output;

[0028] A step (S40) of modulating a bias magnetic field (Bz) with a time-varying voltage through a bias magnetic field formation control module to generate an output signal that outputs a microcurrent photon (fluorescence signal) generated by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward a photodiode section, and PID loop controlling a current moving in the bias magnetic field;

[0029] In a microcurrent sensing NV quantum sensor module, a step (S50) of detecting the frequency of a microcurrent by sensing it as a microcurrent photon through an NV center formed on one side of an electronic component through which current flows and composed of nitrogen atoms and vacancy defects within a diamond lattice structure;

[0030] A step (S60) of collecting microcurrent photons (fluorescence signals) sensed by a microcurrent sensing NV quantum sensor module through an optical fiber section and transmitting them to a photodiode section;

[0031] A step (S70) of detecting microcurrent photons (fluorescence signals) emitted from an optical fiber section in a photodiode section;

[0032] In the microcurrent photon analysis control module, the microcurrent photons transmitted from the photodiode section are collected, and then the spectrum of the preset standard microcurrent photons is compared and analyzed to monitor power usage patterns and abnormal signs, and a prediction model is generated (S80).

[0033] First, the quantum dot qubit control signal generation module can support a wide frequency range from DC to 10 GHz and provides a spurious-free 1 GHz modulation bandwidth, enabling high-speed control through high output and short gate pulses, thereby improving the system's response time.

[0034] Second, the multi-channel pulse waveform generation and control module maximizes the scalability of complex quantum systems, enabling the simultaneous control and processing of more quantum dot qubits. Furthermore, with a trigger-to-output delay of less than 50 ns, it offers faster response times than existing technologies. Furthermore, the precise control of interactions between quantum dot qubits enables highly complex quantum computations and microcurrent photon sensing operations with improved precision.

[0035] Third, by applying the microcurrent sensing NV quantum sensor module to current-carrying electronic components, such as busbars in electric vehicle batteries or wires in distribution panels, microcurrents in the 1-5 mA range can be detected with high sensitivity as fluorescent signals. This module operates reliably across a wide frequency range from DC to 10 GHz and maintains consistent performance even in multi-channel environments. Furthermore, dynamic frequency and cross-coupling control maintain sensitivity across a wide range of frequencies while minimizing signal distortion, thereby enhancing sensor sensitivity and accuracy.

[0036] Fourth, the microcurrent photon analysis control module integrates the reading and analysis functions of quantum dot qubits, previously requiring multiple pieces of equipment, into a single module for on-site performance. This module can analyze up to 12 quantum dot qubits simultaneously and, with a sampling rate of 4 GSa / s and input / output resolution of 14 bits, enables high-speed, high-precision data processing. This improves the accuracy of electric vehicle driving range predictions based on microcurrent sensing data of 5 mA or less when applied to electric vehicle batteries and power distribution systems, thereby increasing power distribution capacity for homes and industrial use.

[0037] FIG. 1 is a block diagram showing the components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0038] Figure 2 is a perspective view showing the components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0039] Figure 3 is a configuration diagram showing the components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0040] FIG. 4 is a block diagram illustrating components of a quantum dot qubit control signal generation module according to the present invention.

[0041] Figure 5 is a block diagram showing components of a bias magnetic field formation control module according to the present invention.

[0042] Figure 6 is a block diagram showing components of a green laser generation control module according to the present invention.

[0043] Figure 7 is a block diagram showing components of a microwave signal generation module according to the present invention.

[0044] FIG. 8 is a diagram illustrating an embodiment of controlling the spin of a quantum dot qubit by applying a resonant microwave pulse through a microwave signal generation module according to the present invention.

[0045] FIG. 9 is a diagram illustrating an embodiment of a method of applying a resonant microwave pulse that resonates only at spin-up transitions through a microwave signal generation module according to the present invention to stimulate a quantum dot qubit only when it is spun up, and detecting a microcurrent photon (fluorescence signal) at this time.

[0046] Figure 10 is a block diagram showing components of a microcurrent sensing NV quantum sensor module according to the present invention.

[0047] Figure 11 is a configuration diagram showing the components of a microcurrent sensing NV quantum sensor module according to the present invention.

[0048] FIG. 12 is a diagram illustrating an embodiment of an ion implantation tool according to the present invention, in which an ion beam of nitrogen atoms is fired at a diamond lattice on the surface to be inserted into a crystal.

[0049] FIG. 13 is an exemplary diagram illustrating the formation of a diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, according to the present invention.

[0050] FIG. 14 is an exemplary diagram illustrating the formation of N quantum dot qubits composed of neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) according to the present invention.

[0051] FIG. 15 is a diagram illustrating an embodiment of a sensor module body according to the present invention, in which quantum dot qubits are controlled through a qubit metal gate on one side of a diamond top surface using crossbar technology, and a two-dimensional array of quantum dots is formed using a limited number of wires connected horizontally and vertically, so that something like 1024 qubits are integrated into a single array of 30 × 30 micrometers or less.

[0052] FIG. 16 is a diagram illustrating an embodiment of a continuous waveform detection technique according to the present invention, in which |ms = ±1> levels are divided using a bias magnetic field Bz to independently measure the state, and |ms = ±1> levels of different NV directions are divided into different amounts in the spin shape of a diamond-based NV center according to the direction of an external magnetic field, and then the NV directions are distinguished from each other, thereby exciting the spin shape of a diamond-based NV center without resonance with a green laser generated from a green laser generation control module.

[0053] Figure 17 is a schematic diagram showing components of an optical fiber according to the present invention.

[0054] Figure 18 is a block diagram showing components of a microcurrent photon analysis control module according to the present invention.

[0055] Figure 19 is a block diagram showing an AI power analysis control unit configured in a microcurrent photon analysis control unit according to the present invention.

[0056] Figure 20 is an exemplary diagram illustrating the operation process of a microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0057] Figure 21 is a flowchart illustrating a microcurrent photon sensing detection method using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0058] FIG. 22 is a flowchart illustrating a specific process of detecting the frequency of a microcurrent by sensing it as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure, formed on one side of an electronic component (bus bar, wire) through which a current flows and a microcurrent is to be sensed, in a microcurrent sensing NV quantum sensor module according to the present invention.

[0059] The best form for implementing a microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor of the present invention is as follows.

[0060] A power supply unit (100) that supplies power to each device;

[0061] A quantum dot qubit control signal generation module (200) that generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth in the direction of the microcurrent sensing NV quantum sensor module, thereby controlling the quantum dot qubit within the microcurrent sensing NV quantum sensor module;

[0062] A multi-channel pulse waveform generation control module (300) connected to a microcurrent sensing NV quantum sensor module, which generates a pulse waveform that controls the quantum dot qubit energy level and cross coupling and controls the output;

[0063] A bias magnetic field formation control module (400) that modulates a bias magnetic field (Bz) with a time-varying voltage, generates an output signal that outputs a microcurrent photon (fluorescence signal) detected by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward a photodiode, and controls a current moving in the bias magnetic field with a PID loop;

[0064] A green laser generation control module (500) located on one side of a microcurrent sensing NV quantum sensor module, which generates a 532 nm green laser to stimulate the diamond-based NV center of the microcurrent sensing NV quantum sensor module to transition to a high energy state, controls the generation of microcurrent photons (fluorescence signals) detectable in a photodiode section, and controls the initialization of an electron spin state;

[0065] A microwave signal generation module (600) that transmits a microwave signal in the direction of a microcurrent sensing NV quantum sensor module to control the spin switching of a quantum dot qubit of a diamond-based NV center;

[0066] A microcurrent sensing NV quantum sensor module (700) formed on one side of an electronic component through which current flows and detects the frequency of a microcurrent as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects in the lattice structure of a diamond;

[0067] An optical fiber section (800) that collects microcurrent photons (fluorescence signals) by contacting the microcurrent sensing NV quantum sensor module and transmits them toward the photodiode section;

[0068] A photodiode section (900) that is in contact with an optical fiber section and detects microcurrent photons (fluorescence signals) transmitted from the optical fiber section;

[0069] A microcurrent photon analysis control module (900a) connected to a photodiode section, which collects detected microcurrent photons, compares and analyzes the spectrum of preset standard microcurrent photons, monitors power usage patterns and abnormal signs, and generates a prediction model;

[0070] A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor characterized by being composed of.

[0071]

[0072] The best form for implementing the microcurrent photon sensing detection method using the 5mA type microcurrent photon sensing NV quantum sensor of the present invention is as follows.

[0073] Step (S10) of supplying power to each device through the power supply;

[0074] A step (S20) of controlling a quantum dot qubit, which is a component of a microcurrent sensing NV quantum sensor module, by generating a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth through a quantum dot qubit control signal generation module;

[0075] A step (S30) of generating a pulse waveform that controls the quantum dot qubit energy level and cross coupling in the direction of a microcurrent sensing NV quantum sensor module through a multi-channel pulse waveform generation control module and controlling the output;

[0076] A step (S40) of modulating a bias magnetic field (Bz) with a time-varying voltage through a bias magnetic field formation control module to generate an output signal that outputs a microcurrent photon (fluorescence signal) generated by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward a photodiode section, and PID loop controlling a current moving in the bias magnetic field;

[0077] In a microcurrent sensing NV quantum sensor module, a step (S50) of detecting the frequency of a microcurrent by sensing it as a microcurrent photon through an NV center formed on one side of an electronic component through which current flows and composed of nitrogen atoms and vacancy defects within a diamond lattice structure;

[0078] A step (S60) of collecting microcurrent photons (fluorescence signals) sensed by a microcurrent sensing NV quantum sensor module through an optical fiber section and transmitting them to a photodiode section;

[0079] A step (S70) of detecting microcurrent photons (fluorescence signals) emitted from an optical fiber section in a photodiode section;

[0080] A microcurrent photon sensing detection method using a 5mA type microcurrent photon sensing NV quantum sensor, characterized by comprising a step (S80) of collecting microcurrent photons transmitted from a photodiode section in a microcurrent photon analysis control module, comparing and analyzing the spectrum of a preset standard microcurrent photon, monitoring power usage patterns and abnormal signs, and generating a prediction model.

[0081] Before explaining the present invention, the following specific structural and functional descriptions are merely exemplified for the purpose of explaining embodiments according to the concept of the present invention. Embodiments according to the concept of the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described in this specification. In addition, since embodiments according to the concept of the present invention can have various changes and can have various forms, specific embodiments will be described in detail in this specification. However, this is not intended to limit embodiments according to the concept of the present invention to a specific disclosed form, but should be understood to include all modifications, equivalents, and substitutes included in the spirit and technical scope of the present invention.

[0082]

[0083] First, the microcurrent sensing described in the present invention refers to 1mA to 5mA or less, including 100A, 10A, 1A, 10μA, and 100μA.

[0084] In addition, a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor, which is composed of a power supply unit (100), a quantum dot qubit control signal generation module (200), a multi-channel pulse waveform generation control module (300), a bias magnetic field formation control module (400), a green laser generation control module (500), a microwave signal generation module (600), a microcurrent sensing NV quantum sensor module (700), an optical fiber unit (800), a photodiode unit (900), and a microcurrent photon analysis control module (900a), configures the reading and analysis functions of quantum dot qubits, which required multiple pieces of equipment in existing systems, into a single modular system, and applies them to one side of an electronic component that wants to sense a microcurrent by flowing current in the field, thereby having the characteristics of generating an integrated analysis and an immediate response signal suitable for the system and device.

[0085] Hereinafter, a preferred embodiment according to the present invention will be described with attached drawings.

[0086] FIG. 1 is a block diagram illustrating components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention, FIG. 2 is a perspective view illustrating components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention, and FIG. 3 is a configuration diagram illustrating components of a microcurrent photon sensing detection device (1) using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention, which is formed on one side of an electronic component through which a current flows and a microcurrent is to be sensed, and is configured to sense and detect a frequency of a microcurrent of 5mA or less as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within a diamond lattice structure.

[0087] More specifically, the microcurrent photon sensing detection device (1) using the above 5mA type microcurrent photon sensing NV quantum sensor is composed of a power supply unit (100), a quantum dot qubit control signal generation module (200), a multi-channel pulse waveform generation control module (300), a bias magnetic field formation control module (400), a green laser generation control module (500), a microwave signal generation module (600), a microcurrent sensing NV quantum sensor module (700), an optical fiber unit (800), a photodiode unit (900), and a microcurrent photon analysis control module (900a).

[0088] First, the power supply unit (100) according to the present invention will be described. The power supply unit (100) supplies power to each device. For example, the power supply unit (100) supplies power of DC 3.3 V and 12 V.

[0089] Next, the quantum dot qubit control signal generation module (200) according to the present invention will be described.

[0090] The above quantum dot qubit control signal generation module (200) generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth toward the microcurrent sensing NV quantum sensor module, thereby controlling the quantum dot qubit, which is a component of the microcurrent sensing NV quantum sensor module. More specifically, it is connected to a quantum dot qubit that forms a quantum dot in a diamond-based NV center of the microcurrent sensing NV quantum sensor module.

[0091] Here, quantum dot qubits are electrons located in a quantum dot, expressed as quantum bits, and have spin.

[0092] It has the characteristics of low phase noise and low spurious tone for high fidelity gates, high output power for short gate pulses without external amplification, and 14-bit output at 6 GSa / s.

[0093] In addition, the waiting time can be minimized, quantum dot qubits can be controlled in 4 to 12 channels, and high-fidelity quantum dot qubit gate operations can be performed.

[0094] The above quantum dot qubit control signal generation module (200) is composed of a double superheterodyne algorithm engine unit (210), an analog output channel unit (220), a sequencer unit (230), a low-delay signal processing chain unit (240), a low-phase noise synthesizer (250), and a high-output power unit (260), as illustrated in FIG. 4.

[0095] The above double superheterodyne algorithm engine unit (210) up-converts the frequency of the input signal to generate a quantum dot qubit control signal in a wide frequency band (from DC to within 10 GHz).

[0096] The above analog output channel unit (220) forms an analog output channel that simultaneously controls a plurality of quantum dot qubits.

[0097] It is configured by selecting one of 4 channels, 6 channels, 8 channels, or 12 channels on one side of the box-shaped body.

[0098] The above sequencer unit (230) determines the order of control signals and adjusts signal timing between quantum dot qubits.

[0099] The above low-delay signal processing chain unit (240) controls the processing and transmission of control signals to minimize signal transmission delay by quickly performing the processing and transmission of control signals.

[0100] This has the characteristic of being effective in situations where a quick response is required, as it can quickly respond to the state of quantum dot qubits that change in real time.

[0101] The above low phase noise synthesizer (250) minimizes the phase noise of the control signal to generate a high-fidelity signal.

[0102] The above high-power power unit (260) provides a strong control signal without an external amplifier, thereby forming a short gate pulse.

[0103] This allows for fast and powerful control of quantum dot qubits, enabling high-speed quantum gate operations.

[0104] In this way, the quantum dot qubit control signal generation module, which is composed of a double superheterodyne algorithm engine section, an analog output channel section, a sequencer section, a low-latency signal processing chain section, a low-phase noise synthesizer, and a high-output power section, supports a wide frequency range from DC to 10 GHz, and can support a wide frequency range, provides a spurious-free 1 GHz modulation bandwidth, and enables high-speed control through high output and short gate pulses, making the system's response time 1.5 to 2 times faster than before.

[0105] Next, the multi-channel pulse waveform generation control module (300) of the present invention will be described.

[0106] The above multi-channel pulse waveform generation control module (300) is connected to a microcurrent sensing NV quantum sensor module, and generates a pulse waveform that controls the quantum dot qubit energy level and cross coupling toward the microcurrent sensing NV quantum sensor module, thereby controlling the output.

[0107] Here, cross-coupling refers to controlling the coupling between non-adjacent resonances through a coupling window, such as coupling between different resonators, rather than sequential coupling between resonances through a coupling window, thereby suppressing unwanted interactions and inducing accurate coupling only when necessary.

[0108] It is formed in a box shape and connected to a microcurrent sensing NV quantum sensor module, and is configured to include a direct mode (310) that maximizes the bandwidth and improves noise performance, a 2.4 GSa / s, 16-bit, 750 MHz signal bandwidth, and an amplification mode (320) that increases the signal amplitude to 5 Vpp.

[0109] Additionally, it features 144 output channels, high channel density, trigger-to-output delay of less than 50 ns, and multi-frequency digital modulation.

[0110] And, to counteract the effect of cross-coupling, additional pulses are configured to be applied to multiple gates (single-structure qubit metal gate, composite-structure qubit metal gate, microwave strip line gate).

[0111] Additionally, to create a single-structure qubit metal gate, a microwave source is modulated and configured to control quantum dot (QD) qubits and neighboring qubits through frequency multiplexing.

[0112] In this way, by configuring a multi-channel pulse waveform generation control module, the scalability of complex quantum systems is maximized, allowing more quantum dot qubits to be processed simultaneously, providing a faster response speed than existing technologies with a trigger-output delay of less than 50 ns, and precisely controlling the interaction between quantum dot qubits, enabling highly complex quantum computation tasks and microcurrent photon sensing tasks to be performed with 80% higher precision than before.

[0113] Next, the bias magnetic field formation control module (400) according to the present invention will be described.

[0114] The above-mentioned bias magnetic field formation control module (400) modulates the bias magnetic field (Bz) with a time-varying voltage, generates an output signal that outputs a microcurrent photon or fluorescent signal detected by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward the photodiode section, and PID loop-controls the current moving in the bias magnetic field.

[0115] As shown in Fig. 5, it is composed of a bias magnetic field modulation signal output unit (410), a PID controller unit (420), and a vector magnetic unit (430).

[0116] The above bias magnetic field modulation signal output unit (410) outputs a bias magnetic field (Bz) modulation signal as a time-varying voltage to the vector magnetic unit.

[0117] This can optimize the sensitivity of the sensor in real time by dynamically controlling the magnetic field, thereby improving the detection accuracy of microcurrent photons.

[0118] The above PID controller (420) controls the bias field modulation parameter to be fed back in response to a change in the detected fluorescence signal.

[0119] It is configured to provide feedback on the fluorescence signal by supplying a current that moves the bias magnetic field to prevent the transition from drifting out of the measurement region due to temperature variations over time.

[0120] This allows modulation of the bias magnetic field with a wide frequency range, high power and dynamic range, providing better sensitivity and shortening the sensing time of microcurrent photons or fluorescence signals by 1.5 to 2 times compared to conventional methods.

[0121] The above vector magnetic part (430) is positioned on both sides or the upper and lower sides based on the microcurrent sensing NV quantum sensor module, and receives a bias magnetic field (Bz) modulation signal from the bias magnetic field formation control module to form a bias magnetic field (Bz).

[0122] It is formed in a square panel structure and is positioned on both sides or the upper and lower sides based on the microcurrent sensing NV quantum sensor module, and is configured to form a bias magnetic field (Bz).

[0123] This allows the microcurrent sensing NV quantum sensor module to operate under optimal conditions by forming a uniform and stable magnetic field, thereby maximizing the sensitivity of the sensor.

[0124] In this way, by configuring a bias magnetic field formation control module composed of the bias magnetic field modulation signal output unit, the PID controller unit, and the vector magnetic unit, in the process of detecting microcurrent photons through a continuous detection technique, a precise and optimal magnetic field can be maintained, and the detection accuracy of the microcurrent sensing NV quantum sensor module is maintained despite temperature changes or external environmental changes, stable detection over a long period of time is possible, and the detection time can be shortened by 1.5 to 2 times compared to the conventional one through precise control of the bias magnetic field.

[0125] Next, the green laser generation control module (500) according to the present invention will be described.

[0126] The above green laser generation control module (500) is located on one side of the microcurrent sensing NV quantum sensor module, generates a 532 nm green laser, stimulates the diamond-based NV center of the microcurrent sensing NV quantum sensor module, controls the diamond-based NV center to transition to a high energy state, generates a microcurrent photon or fluorescent signal that can be detected by a photodiode, and controls the initialization of the electron spin state.

[0127] Here, the transition of the diamond-based NV center to a higher energy state means the non-resonant excitation of the spin configuration of the diamond-based NV center.

[0128] As shown in Fig. 6, it is composed of a green laser beam nozzle section (510) that shoots a green laser beam toward the beam splitter section, a green laser beam generation section (520) that generates a green laser beam, and a beam splitter section (530) that shoots a green laser beam toward the green laser beam nozzle section.

[0129] That is, when it returns directly to the ground state by emitting microcurrent photons or fluorescent signals, it generates red light.

[0130] When electrons in this state are exposed to a green laser beam, the electrons are lifted to a degenerate state (= in quantum mechanics, two or more states exist for one energy level) ms = +-1 and recombine back into M.

[0131] Here, the state where ms=0 emits less red light, so the diamond appears darker.

[0132] When a bias magnetic field (Bz) is formed, this change in photoluminescence intensity can be measured.

[0133] The Zemon effect occurs.

[0134] The degenerate ms=+-1 state is split into two distinct levels.

[0135] A measurable photoluminescence resonance dip is induced by microwave stimulation.

[0136] The stronger the bias magnetic field (Bz), the greater the splitting.

[0137] By measuring the frequency of the double minimum, the strength of the bias magnetic field (Bz) of the two electrons can be determined, making it easy to detect the smallest bias magnetic field (Bz).

[0138] Next, the microwave signal generation module (600) according to the present invention will be described.

[0139] The above microwave signal generation module (600) sends a microwave signal toward the microcurrent sensing NV quantum sensor module to control the spin switching of the quantum dot qubit of the diamond-based NV center.

[0140] Here, sending a microwave signal toward the microcurrent sensing NV quantum sensor module means sending a microwave signal toward the microwave antenna in contact with the microcurrent sensing NV quantum sensor module.

[0141] As shown in Fig. 7, it is composed of a microwave signal generation unit (610), a microwave amplifier unit (620), and a microwave antenna unit (630).

[0142] The above microwave signal generation unit (610) generates a resonant microwave pulse and transmits it to the microwave amplifier unit.

[0143] The above microwave amplifier (620) amplifies the resonant microwave pulse generated by the microwave signal generator.

[0144] The above microwave antenna unit (630) sends a resonant microwave pulse toward the quantum dot qubit of the diamond-based NV center to control spin switching.

[0145] In this way, the microwave signal generation module, which is composed of a microwave signal generation unit, a microwave amplifier unit, and a microwave antenna unit, fires a microwave pulse at the quantum dot qubit to make the electrons spin up.

[0146] At this time, the pulse must be of a very specific frequency, which depends on the bias magnetic field that accompanies the electrons.

[0147] For example, the resonant microwave pulse is 45 GHz.

[0148] The bias magnetic field that spin-switches the quantum dot qubit has a resonant frequency of electrons.

[0149] So, when an electron reaches a resonant microwave pulse that matches its own, it becomes excited and rotates. However, it has the property of being able to stop at any time.

[0150] As illustrated in Figure 8, the spin of a quantum dot qubit is controlled by applying a resonant microwave pulse. Starting with the spin pointing upward, applying a resonant microwave pulse of variable length demonstrates that the spin rotates downward and then upward in a consistent manner. A quantum superposition of spin-up and spin-down states is generated midway through the rotation. The spin state is then measured via an optical transition.

[0151] Diamond-based NV centers have a variety of optical transitions associated with different spin states, including quantum dot qubits and neighboring qubits.

[0152] Therefore, as illustrated in Fig. 9, by applying a resonant microwave pulse that resonates only with the spin-up transition, the quantum dot qubit is stimulated only when the spin is up, and a microcurrent photon or fluorescent signal is detected at this time. Furthermore, darkness is maintained when the spin is lowered. With this configuration and method, the quantum dot qubit control signal generation module according to the present invention can read the spin state of the quantum dot qubit and what it is.

[0153] In this way, by configuring a microwave signal generation module consisting of a microwave signal generation unit, a microwave amplifier unit, and a microwave antenna unit, the spin state of a quantum dot qubit can be accurately controlled, and a detection atmosphere can be formed that can detect microcurrent photons or fluorescence signals according to the spin state, and high-resolution signals can be detected.

[0154] Next, the microcurrent sensing NV quantum sensor module (700) of the present invention will be described.

[0155] The above microcurrent sensing NV quantum sensor module (700) is formed on one side of an electronic component (bus bar, wire) through which a current flows and through which microcurrent is to be sensed, and detects the frequency of the microcurrent as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond.

[0156] It is based on a diamond-based NV center and consists of useful sensors for DC and AC magnetic fields to enable sensitive, wide-field magnetic imaging under ambient conditions.

[0157] Additionally, it is configured to detect frequencies from DC to 10 GHz with a bandwidth of up to 100 kHz using a diamond-based NV center.

[0158] Sensitivity sets the weakest magnetic field sensitivity that can be detected with a signal-to-noise ratio (SNR) of unity over a given bandwidth.

[0159] It is composed of N different diamond-based NV centers in the sensing volume, and has the characteristic of improving the sensitivity by √N, reaching the sensitivity of the pT / √Hz level.

[0160] Additionally, the diamond-based NV center is configured for wide-field magnetic imaging at room temperature.

[0161] Because diamond-based NV centers have four possible orientations within a diamond crystal, they are also configured to be used in vectorial magnetic measurements.

[0162] Additionally, the ambient operating conditions and high sensitivity of the diamond-based NV center provide a wide frequency range and strong signals.

[0163] The above microcurrent sensing NV quantum sensor module (700) is composed of a sensor module body (710), a qubit metal gate (720), a microwave strip line gate (730), a first quantum dot qubit (740), a second quantum dot qubit (750), and a solid immersion lens unit (760), as shown in FIGS. 10 and 11.

[0164] First, the sensor module body (710) according to the present invention will be described.

[0165] The above sensor module body (710) is formed in a slim box shape of 1 mm × 1 mm × 0.5 mm (width × length × height), that is, 1 mm in width, 1 mm in length, and 0.5 mm in height, to protect and support each device from external pressure.

[0166] As illustrated in FIG. 12, by using an ion implantation tool, an ion beam of nitrogen atoms is fired into the diamond lattice on the surface to insert them into the crystal, and as illustrated in FIG. 13, a diamond-based NV center (711), which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of the diamond, is formed, and as illustrated in FIG. 14, N quantum dot qubits (740, 750) composed of neutrons + spins + N14 (Nitrogen-14) + C13 (Carbon-13) are formed.

[0167] Here, quantum dot qubits are formed in the thousands or tens of thousands, but for the purpose of explanation and understanding according to the present invention, a first quantum dot qubit and a second quantum dot qubit are formed.

[0168] At this time, a qubit metal gate is formed on one side of the upper surface of the diamond where the first quantum dot qubit and the second quantum dot qubit are formed, and a microwave strip line gate is formed on one side of the central line surface of the diamond.

[0169] In addition, the sensor module body according to the present invention is formed in various sizes depending on the purpose of use and shape, in addition to the size of 1 mm × 1 mm × 0.5 mm (width × length × height).

[0170] The above diamond-based NV center is specifically formed through the following process.

[0171] First, quantum-grade diamonds are created using a microwave CVD process to create seed diamonds.

[0172] Next, the seed diamond is placed in plasma generated in a microwave oven to slowly grow a diamond layer.

[0173] Additionally, producing quantum-grade diamonds presents the following additional challenges:

[0174] Diamond-based NV centers are formed as close to the sample as possible.

[0175] If the diamond sensor is flat, the layer is formed very close to the surface.

[0176] Next, using an ion implantation tool, an ion beam of nitrogen atoms is fired at the diamond lattice on the surface to insert them into the crystal.

[0177] And, since the arrangement of diamond-based NV centers is important, a mask is used.

[0178] The correct pattern may resist entering the diamond layer.

[0179] That is, it is composed of diamond chips with elaborate patterns created by lithography.

[0180] Subsequently, a high-temperature annealing step performed in vacuum after removing the resist creates atomic vacancies next to the embedded nitrogen atoms, completing the diamond-based NV center.

[0181] Some electrons are trapped in the empty space of the above diamond-based NV center, forming electron spins that can be used as quantum dot qubits.

[0182] These diamond-based NV centers form several unique features required for quantum information systems.

[0183] First, electron spin possesses the characteristic of a very long coherence time, up to 0.8 to 1.5 seconds. This means it can be controlled by a good qubit. Furthermore, such qubits can operate over a wide temperature range, up to room temperature (290 K).

[0184] Second, electron spin is not the only qubit in a quantum information system. It combines with the nuclear spin of the environment to provide additional qubits for storing and processing quantum information.

[0185] Furthermore, electron spin interacts with photons, the fundamental particles of light. This allows quantum states to be transmitted over long distances, linking and entanglement with distant diamond-based NV centers.

[0186] Furthermore, the sensor module body of the present invention controls quantum dot qubits via a qubit metal gate on one side of the diamond top surface using crossbar technology. Furthermore, a much larger number of components, such as a two-dimensional array of quantum dots, can be controlled using a limited number of horizontally and vertically connected wires.

[0187] With this approach, something like 1024 qubits can be integrated into a single array measuring less than 30 × 30 micrometers, as illustrated in FIG. 15.

[0188] This configuration allows the construction of quantum integrated circuits in which different local arrays are interconnected with other local arrays on the same chip using quantum links, which are links that can transmit quantum information and entanglement.

[0189] Second, a qubit metal gate (720) according to the present invention will be described.

[0190] The above qubit metal gate (720) transmits a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling, generated from a multi-channel pulse waveform generation control module, to the first quantum dot qubit and the second quantum dot qubit on one side of the top surface of the diamond.

[0191] As shown in Fig. 11, it is composed of a first qubit metal gate (721) and a second qubit metal gate (722), and a source and a drain are formed on one side.

[0192] The above first qubit metal gate (721) is connected to the first quantum dot qubit and transmits a pulse waveform that controls the quantum dot (QD) energy level and cross coupling, generated from a multi-channel pulse waveform generation control module, toward the first quantum dot qubit.

[0193] The above second qubit metal gate (722) is connected to the second quantum dot qubit and transmits a pulse waveform that controls the quantum dot (QD) energy level and cross coupling, generated from the multi-channel pulse waveform generation control module, toward the second quantum dot qubit.

[0194] In this way, the qubit metal gate (720) composed of the first qubit metal gate (721) and the second qubit metal gate (722) is composed of 10 channels, 100 channels, 1000 channels, and 10000 channels, in addition to 2 channels, depending on the purpose of use and form.

[0195] Third, the microwave strip line gate (730) of the present invention will be described.

[0196] The above microwave strip line gate (730) is located on one side of the central line surface of the diamond, receives a resonant microwave pulse, and transmits it to the first quantum dot qubit and the second quantum dot qubit.

[0197] As shown in Fig. 11, when viewed from the plane, it is formed in a dumbbell-like structure with both sides being wide and the central portion being thin.

[0198] Fourth, the first quantum dot qubit (740) according to the present invention will be described.

[0199] The above first quantum dot qubit (740) is formed by a diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, and neutrons + spins + N14 (Nitrogen-14) + C13 (Carbon-13) are formed on the rm diamond-based NV center space, so that in an electronic component (bus bar, wire) that is intended to sense a microcurrent, a micromagnetic field generated by the flow of current senses the spin change of the quantum dot qubit as a microcurrent photon or fluorescence signal.

[0200] Fourth, the second quantum dot qubit (750) according to the present invention will be described.

[0201] The second quantum dot qubit (750) is positioned on one side of the first quantum dot qubit, and a diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of diamond, is formed, and neutrons + spins + N14 (Nitrogen-14) + C13 (Carbon-13) are formed on the space of the rm diamond-based NV center, so that in an electronic component (bus bar, wire) that is intended to sense a microcurrent, a micromagnetic field generated by the flow of current senses the spin change of the quantum dot qubit as a microcurrent photon or fluorescence signal.

[0202] Fifth, the solid immersion lens unit (760) according to the present invention will be described.

[0203] The above solid immersion lens unit (760) is formed to cover the upper surface perimeter of the sensor module body with a convex lens structure, so as to collect microcurrent photons or fluorescent signals sensed by the first quantum dot qubit and the second quantum dot qubit and transmit them toward the optical fiber unit.

[0204] In this way, the detection through the diamond-based NV center of the microcurrent sensing NV quantum sensor module (700) consisting of the sensor module body (710), qubit metal gate (720), microwave strip line gate (730), first quantum dot qubit (740), second quantum dot qubit (750), and solid immersion lens unit (760) is performed through optical detection.

[0205] And, before optical detection, it is detected by continuous wave detection technique that detects microcurrent photons or fluorescence signals through the spin shape of the diamond-based NV center.

[0206] That is, the continuous wave detection technique independently measures the state by splitting the |ms = ±1> levels using a bias magnetic field Bz, as illustrated in Fig. 16. Since the |ms = ±1> levels of different NV orientations in the spin configuration of the diamond-based NV center are split into different amounts depending on the direction of the external magnetic field, these NV orientations can be distinguished from each other.

[0207] A green laser generated from a green laser generation control module excites the spin shape of a diamond-based NV center without resonance, thereby generating a microcurrent photon or fluorescence signal that can be detected by a photodiode, and a quantum dot qubit control signal generation module sends a resonant microwave (MW) frequency signal to a micro-antenna section close to the spin shape of the diamond-based NV center to drive spin switching.

[0208] Then, while transmitting the microcurrent photon or fluorescent signal toward the photodiode section, the resonant microwave (MW) frequency is swept.

[0209] A drop in the fluorescence signal is observed when the resonant microwave (MW) frequency transitions from the |ms = 0> state to one of the |ms = ±1> states, thereby entering a resonant state.

[0210] The change in fluorescence when the resonant microwave (MW) frequency resonates allows the spectrum to be recorded in the microcurrent photon analysis control module.

[0211] As described above, the microcurrent sensing NV quantum sensor module is configured by including a sensor module body, a qubit metal gate, a microwave strip line gate, a microcurrent photon output gate, a first quantum dot qubit, a second quantum dot qubit, and a solid immersion lens section, thereby detecting microcurrents of 1 mA to 5 mA through high-sensitivity microcurrent photon or fluorescent signal sensing, stably operating in a wide frequency range from DC to 10 GHz, and maintaining consistent performance even in a multi-channel environment, and minimizing signal distortion while maintaining sensitivity in various frequency bands through dynamic frequency and cross-coupling control, thereby improving sensor sensitivity and accuracy by 80%.

[0212] Next, the optical fiber portion (800) according to the present invention will be described.

[0213] The above optical fiber section (800) is in contact with the microcurrent sensing NV quantum sensor module, collects microcurrent photons or fluorescent signals sensed from the microcurrent sensing NV quantum sensor module, and transmits them to the photodiode section.

[0214] It is composed of a single or multiple optical fiber pumps and is configured to transmit microcurrent photons generated from a microcurrent sensing NV quantum sensor module to a photodiode (Sig.Photodiode) unit without loss.

[0215] As shown in Fig. 17, the optical fiber portion (800) is composed of a core portion (810), a clad portion (820), a protective coating portion (830), and a buffer portion (840).

[0216] The core (810) is the central portion of the optical fiber and serves as a path for light to propagate. It is made of silica or other glass materials, and very high-purity materials are used. The core's refractive index is higher than that of the surrounding cladding, allowing light to propagate internally through total internal reflection.

[0217] The above cladding (820) is a layer that surrounds the core and prevents light from leaking out of the core. Here, the refractive index of the cladding is lower than that of the core, which causes light to be totally reflected within the core.

[0218] The above protective coating (830) is a layer applied to protect the cladding, preventing physical damage or environmental influences. This increases the strength while maintaining the flexibility of the optical fiber.

[0219] The above buffer portion (840) is an additional protective layer applied over the protective coating, providing additional mechanical protection and environmental protection.

[0220] Next, the photodiode section (900) of the present invention will be described.

[0221] The above photodiode section (900) is in contact with the optical fiber section and detects microcurrent photons or fluorescent signals emitted from the optical fiber section.

[0222] It is made of semiconductor materials such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs).

[0223] And, it is composed of a junction of a p-type semiconductor and an n-type semiconductor.

[0224] That is, when light reaches this junction, electron-hole pairs are created and these move along the electric field, generating a current.

[0225] The optical window is sealed in a package that includes a transparent window that protects the photodiode and allows external light to reach the semiconductor.

[0226] The electrical contacts located on one side are made of metal contacts for transmitting the generated electrical signal to an external circuit.

[0227] Next, the microcurrent photon analysis control module (900a) of the present invention will be described.

[0228] The above microcurrent photon analysis control module (900a) is connected to a photodiode section, collects microcurrent photons transmitted from the photodiode section, and then compares and analyzes the spectrum of a preset standard microcurrent photon to monitor power usage patterns and abnormal signs and generate a prediction model.

[0229] It is box-shaped and configured to integrate a full real-time readout setup for 128 superconducting and spin quantum dot qubits into a single device.

[0230] Additionally, it provides a clean, 1 GHz bandwidth and is configured to operate over a frequency range from DC to 10 GHz without requiring mixer calibration.

[0231] Additionally, it is configured to analyze up to 12 quantum dot qubits through readout channels of 2, 4, and 8 channels.

[0232] It features a real-time signal processing chain with matched filters and multi-state identification, and has the characteristics of 4 GSa / s sampling rate, 14-bit input, and 6 GSa / s sampling rate, 14-bit output.

[0233] To improve the spin readout speed of a quantum dot qubit, a probe RF readout tone is generated and the reflected response of a detector quantum dot (QD) is collected to perform fast and high-fidelity single-shot spin readout.

[0234] As shown in Fig. 18, the above microcurrent photon analysis control module (900a) is composed of a microcurrent photon collection unit (900a-1), a multi-channel reading channel unit (900a-2), a probe RF reading tone generation unit (900a-3), a real-time signal processing chain unit (900a-4), and a microcurrent photon analysis control unit (900a-5).

[0235] The above microcurrent photon collection unit (900a-1) is connected to the photodiode unit and collects and stores microcurrent photons transmitted from the photodiode unit.

[0236] The above multi-channel reading channel unit (900a-2) forms a channel reading that simultaneously analyzes up to 12 quantum dot qubits through reading channels of 2 channels, 4 channels, and 8 channels.

[0237] The above probe RF read tone generation unit (900a-3) generates a probe RF read tone to improve the spin read speed of the quantum dot qubit and collects the reflected response of the detected quantum dot.

[0238] The above real-time signal processing chain unit (900a-4) supports 14-bit input at a sampling rate of 4 GSa / s and 14-bit output at a sampling rate of 6 GSa / s through a real-time signal processing chain with a multi-state identification function.

[0239] The above microcurrent photon analysis control unit (900a-5) compares and analyzes the spectrum of a preset standard microcurrent photon based on the microcurrent photons collected by the microcurrent photon collection unit, determines whether the power system is operating normally and whether the battery level is low, and controls the generation of an immediate response signal.

[0240] As shown in Fig. 19, it is configured to include an AI power analysis control unit (900a-5a).

[0241] The above AI power analysis control unit (900a-5a) analyzes in real time microcurrent photons transmitted from a photodiode unit to monitor power usage patterns and abnormal signs, and generates a prediction model.

[0242] It excels at analyzing large amounts of data, recognizing patterns, and creating predictive models.

[0243] The present invention applies AI technology to analyze power flow data in real time, detect abnormal patterns, and predict future power demand.

[0244] In this way, the microcurrent photon analysis control module consisting of a microcurrent photon collection unit, a multi-channel readout channel unit, a probe RF readout tone generation unit, a real-time signal processing chain unit, and a microcurrent photon analysis control unit is configured, so that the reading and analysis functions of quantum dot qubits, which required multiple pieces of equipment in existing systems, can be performed on-site with a single module, generating integrated analysis and immediate response signals suitable for the system and device, and analyzing up to 12 quantum dot qubits simultaneously. With a sampling speed of 4 GSa / s and input / output of 14-bit resolution, it can process data faster and more precisely than existing systems, and can be applied to electric vehicle batteries and wiring board wires, preventing and detecting explosions of electric vehicle batteries with microcurrent sensing data of 5 mA or less, and increasing the driving range of electric vehicles and the distribution capacity of homes and industries by up to 10% compared to the past.

[0245] Hereinafter, a detailed process of a microcurrent photon sensing detection method using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention will be described.

[0246] FIG. 21 is a flowchart illustrating a microcurrent photon sensing detection method using a 5mA type microcurrent photon sensing NV quantum sensor according to the present invention.

[0247] First, power is supplied to each device through the power supply (S10).

[0248] Here, each device refers to a quantum dot qubit control signal generation module (200), a multi-channel pulse waveform generation control module (300), a bias magnetic field formation control module (400), a green laser generation control module (500), a microwave signal generation module (600), a microcurrent sensing NV quantum sensor module (700), a photodiode unit (900), and a microcurrent photon analysis control module (900a).

[0249] Next, through the quantum dot qubit control signal generation module, a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth is generated toward the microcurrent sensing NV quantum sensor module, thereby controlling the quantum dot qubit, which is a component of the microcurrent sensing NV quantum sensor module (S20).

[0250] Next, through the multi-channel pulse waveform generation control module, a pulse waveform that controls the quantum dot qubit energy level and cross coupling is generated and output controlled toward the microcurrent sensing NV quantum sensor module (S30).

[0251] Next, by modulating the bias magnetic field (Bz) with a time-varying voltage through the bias magnetic field formation control module, an output signal is generated that outputs the microcurrent photon or fluorescence signal detected by the continuous waveform detection technique in the microcurrent sensing NV quantum sensor module toward the photodiode section, and the current moving in the bias magnetic field is PID loop controlled (S40).

[0252] Next, as illustrated in Fig. 20, in the microcurrent sensing NV quantum sensor module, a current flows and a microcurrent is sensed by forming a microcurrent on one side of an electronic component (bus bar, wire) through which the microcurrent is to be sensed, and the frequency of the microcurrent is sensed as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of the diamond (S50).

[0253] That is, as illustrated in Fig. 22, a 532 nm green laser is generated through a green laser generation control module to stimulate the diamond-based NV center of the microcurrent sensing NV quantum sensor module, thereby controlling the diamond-based NV center to transition to a high energy state and generate a microcurrent photon or fluorescent signal that can be detected by a photodiode, and controlling the electron spin state to be initialized (S51).

[0254] Next, a microwave signal is sent to the microcurrent sensing NV quantum sensor module through the quantum dot qubit control signal generation module to control the spin switching of the quantum dot qubit of the diamond-based NV center (S52).

[0255] Next, in the optical fiber section, the microcurrent photons or fluorescence signals sensed from the microcurrent sensing NV quantum sensor module are collected and transmitted to the photodiode section (S60).

[0256] Next, the photodiode section is brought into contact with the optical fiber section to detect microcurrent photons or fluorescent signals emitted from the optical fiber section (S70).

[0257] Finally, as illustrated in Fig. 20, the microcurrent photon analysis control module collects microcurrent photons transmitted from a photodiode unit, compares and analyzes the spectrum of a preset standard microcurrent photon, monitors power usage patterns and abnormal signs, and generates a prediction model (S80).

[0258] The present invention relates to a microcurrent photon sensing detection device and method using a 5mA type microcurrent photon sensing NV quantum sensor that supports a wide frequency range from DC to 10GHz through a quantum dot qubit control signal generation module, by configuring a power supply unit (100), a quantum dot qubit control signal generation module (200), a multi-channel pulse waveform generation control module (300), a bias magnetic field formation control module (400), a green laser generation control module (500), a microwave signal generation module (600), a microcurrent sensing NV quantum sensor module (700), an optical fiber unit (800), a photodiode unit (900), and a microcurrent photon analysis control module (900a), and has industrial applicability.

Claims

1. A power supply unit that supplies power, A quantum dot qubit control signal generation module that generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth toward the microcurrent sensing NV quantum sensor module, thereby controlling the quantum dot qubit, which is a component of the microcurrent sensing NV quantum sensor module, A multi-channel pulse waveform generation control module that is connected to a microcurrent sensing NV quantum sensor module and generates a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the microcurrent sensing NV quantum sensor module and controls the output, A bias magnetic field formation control module that modulates a bias magnetic field (Bz) with a time-varying voltage, generates an output signal that outputs a microcurrent photon or fluorescence signal detected by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward a photodiode, and PID loop-controls the current moving in the bias magnetic field, A green laser generation control module located on one side of a microcurrent sensing NV quantum sensor module generates a 532 nm green laser to stimulate a diamond-based NV center of the microcurrent sensing NV quantum sensor module, so that the diamond-based NV center transitions to a high energy state, generating a microcurrent photon or fluorescent signal that can be detected by a photodiode unit, and controlling the initialization of an electron spin state; A microwave signal generation module that sends a microwave signal toward the microcurrent sensing NV quantum sensor module to control the spin switching of the quantum dot qubit of the diamond-based NV center, A microcurrent sensing NV quantum sensor module that detects the frequency of the microcurrent by sensing it as a microcurrent photon through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, formed on one side of an electronic component that wants to sense the microcurrent by flowing current, and An optical fiber section that is in contact with the microcurrent sensing NV quantum sensor module and collects microcurrent photons or fluorescent signals sensed from the microcurrent sensing NV quantum sensor module and transmits them to the photodiode section, A photodiode section that comes into contact with an optical fiber section and detects microcurrent photons or fluorescent signals emitted from the optical fiber section, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it comprises a microcurrent photon analysis control module that is connected to a photodiode section, collects microcurrent photons transmitted from the photodiode section, compares and analyzes the spectrum of a preset standard microcurrent photon, monitors power usage patterns and abnormal signs, and generates a prediction model.

2. In the first paragraph, the quantum dot qubit control signal generation module A double superheterodyne algorithm engine that up-converts the frequency of an input signal and generates a quantum dot qubit control signal in a frequency band from DC to within 10 GHz, An analog output channel section that forms an analog output channel that simultaneously controls a plurality of quantum dot qubits, A sequencer section that determines the order of control signals and adjusts signal timing between quantum dot qubits; A low-latency signal processing chain section that controls the processing and transmission of control signals to minimize signal transmission delay, A low phase noise synthesizer that generates a high-fidelity signal by minimizing the phase noise of the control signal, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor characterized by comprising a high-output power unit that forms a short gate pulse by providing a strong control signal without an external amplifier.

3. In the first paragraph, the bias magnetic field formation control module A bias magnetic field modulation signal output section that outputs a bias magnetic field modulation signal with a time-varying voltage to the vector magnetic section, A PID controller section that controls the bias field modulation parameters to be fed back in response to changes in the detected fluorescence signal; A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it is configured with a vector magnetic section that is positioned on both sides or the upper and lower sides of a microcurrent sensing NV quantum sensor module and receives a bias magnetic field modulation signal from a bias magnetic field formation control module to form a bias magnetic field (Bz).

4. In the first paragraph, the microwave signal generation module A microwave signal generating unit that generates a resonant microwave pulse and transmits it to a microwave amplifier unit, A microwave amplifier that amplifies the resonant microwave pulse generated by the microwave signal generator, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it comprises a microwave antenna section that sends a resonant microwave pulse toward a quantum dot qubit of a diamond-based NV center to control spin switching.

5. In the first paragraph, the microcurrent sensing NV quantum sensor module The sensor module body is formed in a box shape with a width of 1 mm, a length of 1 mm, and a height of 0.5 mm, and protects and supports each device from external pressure. On one side of the top surface of the diamond, a qubit metal gate that transmits a pulse waveform that controls the quantum dot (QD) energy level and cross-coupling generated from a multi-channel pulse waveform generation control module to the first quantum dot qubit and the second quantum dot qubit, A microwave strip line gate located on one side of the central line surface of the diamond, which receives a resonant microwave pulse and transmits it to the first quantum dot qubit and the second quantum dot qubit, A diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, is formed, and neutrons + spins + N14 (Nitrogen-14) + C13 (Carbon-13) are formed on the space of the rm diamond-based NV center, and in an electronic component that wants to sense microcurrent, a first quantum dot qubit that senses the spin change of the quantum dot qubit as a microcurrent photon or fluorescence signal by a micromagnetic field generated by the current flowing, and A diamond-based NV center, which is an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, is formed on one side of the first quantum dot qubit, and a neutron + spin + N14 (Nitrogen-14) + C13 (Carbon-13) is formed on the space of the rm diamond-based NV center, so that in an electronic component that wants to sense a microcurrent, a micromagnetic field generated by the flow of current is sensed by a spin change of the quantum dot qubit as a microcurrent photon or fluorescence signal, and A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it comprises a solid immersion lens section formed to be covered with a convex lens structure along the perimeter of the upper surface of the sensor module body, and collects microcurrent photons or fluorescent signals sensed by the first quantum dot qubit and the second quantum dot qubit and transmits them toward the optical fiber section.

6. In the fifth paragraph, the sensor module body A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor characterized in that 1024 qubits are integrated into a single array of 30 × 30 micrometers or less.

7. In the fifth paragraph, the qubit metal gate A first qubit metal gate connected to the first quantum dot qubit and transmitting a pulse waveform generated from a multi-channel pulse waveform generation control module to control the quantum dot energy level and cross-coupling toward the first quantum dot qubit, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it comprises a second qubit metal gate connected to a second quantum dot qubit and transmitting a pulse waveform that controls the quantum dot energy level and cross coupling, generated from a multi-channel pulse waveform generation control module, toward the second quantum dot qubit.

8. In the first paragraph, the microcurrent photon analysis control module A microcurrent photon collection unit connected to the photodiode unit and collecting and storing microcurrent photons transmitted from the photodiode unit, A multi-channel readout channel unit that forms a channel readout that simultaneously analyzes up to 12 quantum dot qubits through readout channels of 2, 4, and 8 channels, To improve the spin readout speed of the quantum dot qubit, a probe RF readout tone generation unit that generates a probe RF readout tone and collects the reflected response of the detected quantum dot, A real-time signal processing chain section supporting 14-bit input at 4 GSa / s sampling rate and 14-bit output at 6 GSa / s sampling rate through a real-time signal processing chain with multi-state identification function, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it comprises a microcurrent photon analysis control unit that compares and analyzes the spectrum of a preset standard microcurrent photon based on the microcurrent photon collected from the microcurrent photon collection unit, determines whether the power system is operating normally and whether the battery is in good condition, and controls the generation of an immediate response signal.

9. In paragraph 8, the microcurrent photon analysis control unit A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized by comprising an AI power analysis control unit that monitors power usage patterns and abnormal signs and generates a predictive model by analyzing in real time microcurrent photons transmitted from a photodiode unit.

10. Step of supplying power to each device through the power supply, A step of controlling a quantum dot qubit, which is a component of a microcurrent sensing NV quantum sensor module, by generating a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth toward a microcurrent sensing NV quantum sensor module through a quantum dot qubit control signal generation module, A step of controlling the output by generating a pulse waveform that controls the quantum dot qubit energy level and cross coupling toward the microcurrent sensing NV quantum sensor module through a multi-channel pulse waveform generation control module, A step of generating an output signal that outputs a microcurrent photon or fluorescent signal detected by a continuous waveform detection technique in a microcurrent sensing NV quantum sensor module toward a photodiode section by modulating a bias magnetic field with a time-varying voltage through a bias magnetic field formation control module, and PID loop controlling a current moving in the bias magnetic field; In the microcurrent sensing NV quantum sensor module, a step of detecting the frequency of the microcurrent by sensing it as a microcurrent photon through the NV center composed of nitrogen atoms and vacancy defects within the lattice structure of the diamond by forming a microcurrent on one side of the electronic component through which the current flows, In the optical fiber section, a step of collecting microcurrent photons or fluorescent signals sensed from the microcurrent sensing NV quantum sensor module and transmitting them to the photodiode section, A step of detecting microcurrent photons or fluorescent signals emitted from the optical fiber portion by contacting the photodiode portion, A microcurrent photon sensing detection method using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that the microcurrent photon analysis control module collects microcurrent photons transmitted from a photodiode section, compares and analyzes the spectrum of a preset standard microcurrent photon, monitors power usage patterns and abnormal signs, and generates a prediction model.

11. In paragraph 10, the step A step of generating a 532 nm green laser through a green laser generation control module to stimulate a diamond-based NV center of a microcurrent sensing NV quantum sensor module, thereby controlling the diamond-based NV center to transition to a high energy state and generate a microcurrent photon or fluorescent signal that can be detected by a photodiode unit, and controlling the initialization of an electron spin state; A method for detecting microcurrent photon sensing using a 5mA type microcurrent photon sensing NV quantum sensor, comprising a step of controlling a quantum dot qubit of a diamond-based NV center to spin-switch by sending a microwave signal toward a microcurrent sensing NV quantum sensor module through a quantum dot qubit control signal generation module.

12. In a microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor that detects a frequency of microcurrent below 5mA by sensing microcurrent photons through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, formed on one side of an electronic component that is intended to sense microcurrent, The microcurrent photon sensing detection device using the above 5mA type microcurrent photon sensing NV quantum sensor includes a quantum dot qubit control signal generation module that generates a quantum dot qubit control signal in a frequency range from DC to 10 GHz with a spurious-free 1 GHz modulation bandwidth toward the microcurrent sensing NV quantum sensor module, thereby controlling the quantum dot qubit, which is a component of the microcurrent sensing NV quantum sensor module.

13. In a microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor that detects a frequency of microcurrent of 5mA or less by sensing microcurrent photons through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, formed on one side of an electronic component that is intended to sense microcurrent, The microcurrent photon sensing detection device using the above 5mA type microcurrent photon sensing NV quantum sensor generates a quantum dot qubit control signal in a frequency range from DC to 10GHz with a spurious-free 1GHz modulation bandwidth toward the microcurrent sensing NV quantum sensor module, and controls the quantum dot qubit, which is a component of the microcurrent sensing NV quantum sensor module, and a quantum dot qubit control signal generation module. A multi-channel pulse waveform generation control module that is connected to a microcurrent sensing NV quantum sensor module and generates a pulse waveform that controls the quantum dot qubit energy level and cross-coupling toward the microcurrent sensing NV quantum sensor module and controls the output. A bias magnetic field modulation control module that modulates the bias magnetic field (Bz) with a time-varying voltage, generates an output signal that outputs the microcurrent photon or fluorescence signal detected by the continuous waveform detection technique in the microcurrent sensing NV quantum sensor module toward the photodiode, and PID loop-controls the current moving in the bias magnetic field. A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it includes a green laser generation control module located on one side of a microcurrent sensing NV quantum sensor module to generate a 532nm green laser, thereby stimulating a diamond-based NV center of the microcurrent sensing NV quantum sensor module, thereby causing the diamond-based NV center to transition to a high energy state, thereby generating a microcurrent photon or fluorescent signal detectable by a photodiode unit, and controlling the initialization of an electron spin state.

14. In the 13th paragraph, the microcurrent photon sensing detection device using the microcurrent photon sensing NV quantum sensor, A microwave signal generation module that sends a microwave signal toward the microcurrent sensing NV quantum sensor module to control the spin switching of the quantum dot qubit of the diamond-based NV center, A microcurrent sensing NV quantum sensor module formed on one side of an electronic component that is intended to sense microcurrent, detects the frequency of microcurrent by sensing it as microcurrent photons through an NV center composed of nitrogen atoms and vacancy defects within the lattice structure of a diamond, and An optical fiber section that is in contact with the microcurrent sensing NV quantum sensor module and collects microcurrent photons or fluorescent signals sensed from the microcurrent sensing NV quantum sensor module and transmits them to the photodiode section, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it further includes a photodiode section that detects microcurrent photons or fluorescent signals emitted from the optical fiber section by contacting the optical fiber section.

15. In the 14th paragraph, the microcurrent photon sensing detection device using the microcurrent photon sensing NV quantum sensor, A microcurrent photon sensing detection device using a 5mA type microcurrent photon sensing NV quantum sensor, characterized in that it further includes a microcurrent photon analysis control module that collects microcurrent photons transmitted from a photodiode section, compares and analyzes the spectrum of a preset standard microcurrent photon, monitors power usage patterns and abnormal signs, and generates a prediction model.

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