Method for preparing gallium-indium alloy

Abstract

The present invention provides a method for preparing a gallium-indium alloy. The preparation method comprises: roasting a mixture of a gallium-containing waste and an indium-containing waste, smelting same under a negative pressure, cooling same to obtain a liquid gallium-indium, and uniformly mixing same to obtain a gallium-indium alloy. The roasting process is used for removing some of the chlorides and sulfides from the raw materials so as to reduce corrosion to subsequent equipment. The negative-pressure smelting is divided into three stages: the first negative-pressure smelting is used for removing low-melting-point substances that have been reduced; the second negative-pressure smelting is used for removing zinc and lead elements; and the third negative-pressure smelting enables gallium and indium to vaporize within corresponding temperature ranges and volatilize with the flue, and the vapors are subsequently cooled to form a liquid form upon cooling. After uniform mixing, the gallium-indium alloy can be obtained. In summary, the preparation method provided by the present invention has a short production process and a good impurity removal effect, and also produces by-products having economic value.

Description

Preparation method of gallium-indium alloy

[0001] The present application claims priority to the Chinese patent application No. 2024113510256, filed on September 26, 2024, and entitled "Preparation method of gallium-indium alloy", the content of which is incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present application belongs to the technical field of non-ferrous smelting, and particularly relates to a preparation method of gallium-indium alloy. BACKGROUND

[0003] The rare metal gallium is an important strategic resource. A series of compounds prepared based on the metal gallium, such as semiconductor materials, electronic-optical materials, new functional materials, special alloys, and organometallic compounds, are important basic support materials in the fields of modern electronic computers, communications, space exploration, new energy, medicine and health, and military industry. At present, about 90% of primary gallium is recovered from the production process of aluminum oxide, and there is a mature industrial chain. At the same time, some gallium is also enriched in the process of smelting zinc and coal ash, but the gallium enriched in these two raw materials has not been industrialized due to long extraction process and high cost. At present, a small amount of gallium can be recycled from gallium-containing waste, but due to the low melting point characteristics of some gallium-based materials, the energy consumption for impurity removal is high, and the process flow is also complex, resulting in high cost in gallium recovery.

[0004] Indium has very low content in the earth's crust, and its distribution is small and dispersed. The abundance of indium in the earth's crust is only 0.05-0.072 ppm, and it almost cannot form an independent deposit, but is usually dispersed in other element-containing sulfide minerals. At present, 80% of primary indium comes from sphalerite, followed by galena, lead sulfide, copper sulfide, and cassiterite, but the recovery rate is low, generally only about 50%. Similar to gallium, metal indium can be obtained from indium-containing waste for recycling, but due to the low melting point characteristics of some indium-based materials, there are still problems such as high energy consumption for impurity removal, complex process flow, and high cost.

[0005] However, at present, in the traditional process for preparing gallium-indium alloy, crude gallium and crude indium need to be extracted first, and then deep processing is performed to obtain high-purity gallium and high-purity indium. The gallium-indium alloy is prepared using high-purity gallium and high-purity indium as raw materials, and the process is long and complex. SUMMARY

[0006] Therefore, the purpose of the present application is to provide a preparation method of gallium-indium alloy. The preparation method is simple in steps, short in process flow, and the obtained gallium-indium alloy meets the purity requirements.

[0007] To achieve this purpose, the present application adopts the following technical solutions:

[0008] In a first aspect, the present application provides a method for preparing a gallium-indium alloy, comprising the following steps:

[0009] roasting the mixture of the gallium-containing waste and the indium-containing waste, and then performing negative pressure smelting, cooling, obtaining liquid gallium-indium, mixing uniformly, and obtaining the gallium-indium alloy;

[0010] The negative pressure smelting comprises: first negative pressure smelting, second negative pressure smelting, and third negative pressure smelting.

[0011] The temperature of the first negative pressure smelting is 350-450°C, and the time is 0.1-1h.

[0012] The temperature of the second negative pressure smelting is 500-700°C, and the time is 0.1-1h.

[0013] The temperature of the third negative pressure smelting is 1000-1400°C, and the time is 0.1-1h.

[0014] Preferably, the pressure of the negative pressure smelting is 3000-10000Pa.

[0015] Preferably, the mass ratio of the gallium-containing waste to the indium-containing waste is (0.1-1):1.

[0016] Preferably, the components of the gallium-containing waste include: 89-95wt% iron oxides, 0-2wt% SiO2, 1-5wt% ZnO, and a total amount of less than 10wt% of Na2O, MgO, CaCO3, Al2O3, TiO2, V2O5, Cr2O3, MnO, PbO, CuO, NiO, chlorides, or sulfides, or a combination of any one or more thereof.

[0017] The content of gallium in the gallium-containing waste is 100-500g / t.

[0018] Preferably, the components of the indium-containing waste include: 40-62wt% TFe, 5-15wt% Zn, 8-20wt% C, and a total amount of less than 15wt% of Ca, Ti, Al, Mg, K, Mn, Na, Cl, Pb, Si, S, or a combination of any one or more thereof.

[0019] The content of indium in the indium-containing waste is 40-100g / t.

[0020] Preferably, the temperature of the roasting is 400-550°C, and the time is 0.1-1h.

[0021] Preferably, the purity of the gaseous gallium-indium obtained after the negative pressure smelting is 6-8N.

[0022] Preferably, the temperature of the cooling is 31-50 DEG C.

[0023] Preferably, the temperature of the cooling is 31-50 DEG C.

[0024] Preferably, the mixing is carried out under stirring.

[0025] Preferably, the mixing is carried out under stirring.

[0026] Preferably, the mass ratio of gallium to indium in the gallium-indium alloy is (10-60):(40-90).

[0027] Compared with the prior art, the gallium-indium alloy preparation method has the following advantages:

[0028] The gallium-indium alloy preparation method provided by the application is characterized in that: the gallium-indium alloy is prepared by mixing low-gallium-containing waste and low-indium-containing waste in a short process, and then carrying out roasting, vacuum smelting (i.e., negative pressure smelting), cooling and mixing.

[0029] The raw material for preparing the gallium-indium alloy in the application is unique, and no additional auxiliary materials are needed in addition to the low-gallium-containing waste and the low-indium-containing waste. DETAILED DESCRIPTION

[0030] The technical solutions of the application will be described clearly and completely below with reference to the embodiments of the application. Obviously, the described embodiments are only some of the embodiments of the application, but not all the embodiments of the application. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the application.

[0031] The application provides a gallium-indium alloy preparation method, which comprises the following steps:

[0032] The mixture of the low-gallium-containing waste and the low-indium-containing waste is subjected to roasting and negative pressure smelting, and then cooled to obtain liquid gallium-indium, which is mixed uniformly to obtain the gallium-indium alloy.

[0033] In the present application, the gallium-containing waste is a waste in the smelting process of vanadium-titanium magnetite in Panxi region, specifically a vanadium extraction converter sludge. In the present application, the vanadium extraction converter sludge has a composition range of 89-95 wt% iron oxide, 0-2 wt% SiO2, 1-5 wt% ZnO, and a total amount of less than 10 wt% of any one or combination of Na2O, MgO, CaCO3, Al2O3, TiO2, V2O5, Cr2O3, MnO, PbO, CuO, NiO, chloride or sulfide; preferably 90-92 wt% iron oxide, 0.5-1.5 wt% SiO2, 1-4 wt% ZnO, and a total amount of less than 8 wt% of any one or combination of Na2O, MgO, CaCO3, Al2O3, TiO2, V2O5, Cr2O3, MnO, PbO, CuO, NiO, chloride or sulfide. In the present application, the gallium-containing waste has a trace amount of gallium, specifically 100-500 g / t, preferably 200-500 g / t, and more preferably 300-500 g / t.

[0034] In the present application, the indium-containing waste is a waste in the smelting process of vanadium-titanium magnetite in Panxi region, specifically a blast furnace gas mud. In the present application, the blast furnace gas mud has a composition range of 40-62 wt% TFe, 5-15 wt% Zn, 8-20 wt% C, and a total amount of less than 15 wt% of any one or combination of Ca, Ti, Al, Mg, K, Mn, Na, Cl, Pb, Si, S; preferably 45-60 wt% TFe, 8-12 wt% Zn, 10-15 wt% C, and a total amount of less than 10 wt% of any one or combination of Ca, Ti, Al, Mg, K, Mn, Na, Cl, Pb, Si, S. In the present application, the indium-containing waste has a trace amount of indium, specifically 40-100 g / t, preferably 50-100 g / t, and more preferably 70-100 g / t.

[0035] According to the present application, the gallium-containing waste and the indium-containing waste are first mixed to obtain a mixture of the two. Since the contents of gallium and indium in the gallium-containing waste and the indium-containing waste have a certain influence on the ratio of gallium and indium in the final product gallium-indium alloy, and the carbon content in the indium-containing waste will affect the degree of dissociation of gallium and indium from the raw materials under vacuum (i.e., negative pressure) conditions. Therefore, the gallium-containing waste and the indium-containing waste are preferably mixed in a ratio of (0.1-1):1, more preferably (0.3-0.8):1, and further preferably (0.5-0.6):1.

[0036] Then, the mixture is subjected to a roasting process. In the present application, the purpose of the roasting process is to remove part of the chlorides and sulfides in the raw material to reduce the corrosion of the subsequent equipment. In the present application, the temperature of the roasting process is 400-550°C, preferably 450-500°C; the time is 0.1-1h, preferably 0.3-0.5h. In the present application, the roasting process can be carried out in a normal pressure heating device such as a rotary kiln.

[0037] After the roasting process, the obtained material is preferably subjected to a negative pressure melting, i.e. vacuum melting. In the present application, the negative pressure melting is preferably carried out in a closed melting furnace, which needs to maintain a negative pressure, controlled at 3000-10000 Pa, preferably 5000-7000 Pa, a state of micro-negative pressure can reduce the temperature of the gasification of cations and other volatile elements.

[0038] In some preferred embodiments of the present application, the negative pressure melting includes a first negative pressure melting, a second negative pressure melting and a third negative pressure melting, and the melting temperature increases in turn. The present application does not have a particular limitation on the temperature rising rate during the negative pressure melting process, which can be generally 5-20°C / min.

[0039] In the present application, the temperature of the first negative pressure melting is 350-450°C, preferably 380-400°C; the residence time is 0.1-1h, preferably 0.3-0.5h; until the low-melting-point substances (such as sulfides and chlorides) in the material are reduced and discharged with the flue of the closed melting furnace. In the present application, the residence time depends on the temperature of the first negative pressure melting and the content of low-melting-point substances. That is, the higher the temperature of the first negative pressure melting, the lower the content of low-melting-point substances, and the shorter the residence time; on the contrary, the lower the temperature of the first negative pressure melting, the higher the content of low-melting-point substances, and the longer the residence time.

[0040] The temperature of the second negative pressure melting is 500-700°C, preferably 350-650°C; the residence time is 0.1-1h, preferably 0.3-0.5h, and this process is mainly to change all zinc and lead elements into steam and discharge them with the flue.

[0041] The temperature of the third negative pressure melting is 1000-1400°C, preferably 1100-1200°C; the residence time is 0.1-1h, preferably 0.3-0.5h, and in this process, only gallium and indium will change into steam and discharge with the flue at this temperature range. It should be noted that the residence time at this temperature range depends on the actual bath temperature of the closed melting furnace at this temperature range. That is, the higher the bath temperature, the shorter the residence time; on the contrary, the lower the bath temperature, the longer the residence time.

[0042] In the present application, after the third negative pressure smelting is finished, the gallium and indium volatilized with the flue gas still exist in gaseous form, and the purity reaches 6-8N.

[0043] Subsequently, according to the present application, the gaseous gallium and indium are introduced into a dry low-temperature furnace protected by inert gas, preferably high-purity argon, the pressure in the furnace should be higher than 150-500 Pa, preferably 200-400 Pa, and the temperature in the furnace is controlled at 31-50°C, preferably 35-45°C. At this time, after the temperature is lowered, the gallium and indium elements change from gaseous state to liquid state. It should be noted that the liquid state is not the liquid state of water, and can be understood as having flowability. Specifically, it is a flowable gallium-indium alloy.

[0044] To ensure the uniform mixing of gallium and indium, the present application preferably stirs the high-purity gallium and indium in the low-temperature furnace, and the stirring time is 0.5-2h, so that the gallium-indium alloy with purity of 6-8N is obtained.

[0045] In the present application, the mass ratio of gallium to indium in the finally obtained finished gallium-indium alloy is (10-60):(40-90), preferably (15-45):(55-85).

[0046] In summary, the preparation method of the gallium-indium alloy provided by the present application not only has simpler steps, but also has unique raw materials. In addition to the two waste materials, no additional auxiliary materials are needed. The gallium and indium content in the waste materials containing gallium and indium is trace amount, and no intermediate products of crude gallium / indium and high-purity gallium / indium are needed. The gallium-indium alloy is directly produced, the process flow is short, the impurity removal effect is good, the gallium-indium alloy with purity of 6N-8N can be obtained, and it is conducive to realizing large-scale production or industrialized production.

[0047] In order to further illustrate the present application, the following examples are used for detailed description.

[0048] Example 1

[0049] The preparation raw material of the gallium-indium alloy of the embodiment is vanadium extraction converter sludge and blast furnace gas mud, both of which are waste in the smelting process of vanadium-titanium magnetite in Panxi region. The composition of the vanadium extraction converter sludge is 95wt% iron oxide, 4wt% ZnO, 0.1wt% Na2O, 0.05wt% MgO, 0.02wt% CaCO3, 0.03wt% Al2O3, 0.1wt% TiO2, 0.15wt% V2O5, 0.1wt% Cr2O3, 0.05wt% MnO, 0.1wt% PbO, 0.1wt% CuO, 0.05wt% NiO, and the rest is chloride, and the gallium content in the raw material is 500g / t. The composition of the blast furnace gas mud is 60wt% TFe, 15wt% Zn, 10wt% C, 1wt% Ca, 2wt% Ti, 2wt% Al, 1wt% Mg, 1wt% K, 1wt% Mn, 1wt% Na, 2wt% Cl, 1wt% Pb, 2wt% Si, and the rest is S, and the indium content in the blast furnace gas mud in the embodiment is 100g / t, wherein the carbon exists in the form of an element, the cations mainly exist in the form of oxides, and Na and K exist in the form of chlorides and sulfides.

[0050] The specific preparation method is as follows:

[0051] (1) The vanadium extraction converter sludge and the blast furnace gas mud are mixed in a ball mill, and the mass ratio of the vanadium extraction converter sludge to the blast furnace gas mud is 0.5:1;

[0052] (2) The mixture of the vanadium extraction converter sludge and the blast furnace gas mud is calcined, the calcination temperature is 550℃, and the calcination time is 0.1h;

[0053] (3) The material obtained after the calcination of step (2) is reduced by using a closed smelting furnace, and the closed furnace needs to be kept at a negative pressure of 3000Pa; in the process, it includes a first-stage negative pressure smelting, a second-stage negative pressure smelting, and a third-stage negative pressure smelting:

[0054] 3.1 In the first-stage negative pressure smelting process, the temperature is controlled at 350℃, and the residence time is 1h;

[0055] 3.2 As the temperature continues to rise, in the second-stage negative pressure smelting process, the temperature is 700℃, and the residence time is 0.1h;

[0056] 3.3 As the temperature continues to rise, in the third-stage negative pressure smelting process, the temperature is 1400℃, and the residence time is 0.1h, at this time, gallium and indium become steam and volatilize with the flue gas, and exist in the form of gas, and the purity reaches 8N;

[0057] (4) The gaseous gallium and indium are introduced into a high-purity argon-protected dry low-temperature furnace, the pressure in the furnace is higher than that of the atmosphere by 500Pa, and the furnace temperature is controlled at 31℃. At this time, the gallium and indium elements change from gas to liquid;

[0058] (5) Stir the high-purity gallium and indium in the low-temperature furnace for 0.5 h, and a gallium-indium alloy with a purity of 8N can be obtained, wherein the gallium content in the gallium-indium alloy is about 55wt%, and the indium content is about 45wt%.

[0059] Example 2

[0060] The gallium-indium alloy preparation raw material involved in this embodiment is vanadium extraction converter sludge and blast furnace gas mud, which are both waste in the vanadium-titanium magnetite smelting process in Panxi region. The composition range of the vanadium extraction converter sludge is 89wt% iron oxides, 2wt% SiO2, 1wt% ZnO, 1wt% Na2O, 0.3wt% MgO, 1wt% CaCO 3， 0.2wt% Al2O3, 0.3wt% TiO2, 0.7wt% V2O5, 0.5wt% Cr2O3, 1wt% MnO, 1wt% PbO, 0.99wt% CuO, 0.5wt% NiO, and the balance is sulfide. The gallium content in the raw material is 100g / t. The composition range of the blast furnace gas mud is 60wt% TFe, 5wt% Zn, 20wt% C, 1wt% Ca, 2wt% Ti, 2wt% Al, 1wt% Mg, 1wt% K, 1wt% Mn, 1wt% Na, 2wt% Cl, 1wt% Pb, 2wt% Si, and the balance is S. The indium content in the blast furnace gas mud in the vanadium-titanium magnetite smelting process in Panxi region is 80g / t. The carbon exists in the form of an element, the cations mainly exist in the form of oxides, and Na and K exist in the form of chlorides and sulfides.

[0061] The specific preparation method is as follows:

[0062] (1) The vanadium extraction converter sludge and the blast furnace gas mud are mixed, and the mass ratio of the vanadium extraction converter sludge to the blast furnace gas mud is 0.1:1;

[0063] (2) The mixture of the vanadium extraction converter sludge and the blast furnace gas mud is calcined, the calcination temperature is 400℃, and the calcination time is 1h;

[0064] (3) The material obtained after step (2) is reduced by using a closed smelting furnace. The closed furnace needs to be kept under negative pressure, which is controlled at 10000Pa. In this process, it includes a first-stage negative pressure smelting, a second-stage negative pressure smelting, and a third-stage negative pressure smelting:

[0065] 3.1 In the first-stage negative pressure smelting process, the temperature is controlled at 450℃, and the residence time is 1h;

[0066] 3.2 As the temperature continues to rise, in the second-stage negative pressure smelting process, the temperature is controlled at 500℃, and the residence time is 1h;

[0067] 3.3 With the temperature continuing to rise, in the third stage of the negative pressure smelting process, when the temperature is 1000°C, stop for 1 h, at this time, gallium and indium become steam and volatilize with the flue gas, existing in gaseous form, with a purity of 6N;

[0068] (4) The gaseous gallium and indium are introduced into a dry low-temperature furnace protected by high-purity argon, and the pressure in the furnace should be higher than 150 Pa above atmospheric pressure, and the furnace temperature is controlled at 31°C. At this time, the gallium and indium elements have changed from gaseous state to liquid state;

[0069] (5) Stir the high-purity gallium and indium in the low-temperature furnace for 2 h, and a gallium-indium alloy with a purity of 6N is obtained. The gallium content in the gallium-indium alloy is 11wt%, and the indium content is 89wt%.

[0070] Comparative Example 1

[0071] The raw materials for preparing the gallium-indium alloy of the present comparative example are vanadium extraction converter sludge and blast furnace gas mud, which are both waste in the smelting process of vanadium-titanium magnetite in Panxi area. Among them, the composition of the vanadium extraction converter sludge is 95wt% iron oxide, 4wt% ZnO, and the rest is 0.1wt% Na2O, 0.05wt% MgO, 0.02wt% CaCO3, 0.03wt% Al2O3, 0.1wt% TiO2, 0.15wt% V2O5, 0.1wt% Cr2O3, 0.05wt% MnO, 0.1wt% PbO, 0.1wt% CuO, 0.05wt% NiO, and the rest is chloride, and the gallium content in the raw material is 500g / t. The composition of the blast furnace gas mud is 60wt% TFe, 15wt% Zn, 10wt% C, 1wt% Ca, 2wt% Ti, 2wt% Al, 1wt% Mg, 1wt% K, 1wt% Mn, 1wt% Na, 2wt% Cl, 1wt% Pb, 2wt% Si, and the rest is S. The indium content in the blast furnace gas mud in the present example is 100g / t. The carbon in the blast furnace gas mud in the present example exists in the form of elemental carbon, the cations mainly exist in the form of oxides, and Na and K exist in the form of chlorides and sulfides.

[0072] The specific preparation method is as follows:

[0073] (1) Mix the vanadium extraction converter sludge and the blast furnace gas mud in the ball mill, and the mass ratio of the vanadium extraction converter sludge to the blast furnace gas mud is 0.5:1;

[0074] (2) Roast the mixture of the vanadium extraction converter sludge and the blast furnace gas mud, and the roasting temperature is 550°C, and the roasting time is 0.1h;

[0075] (3) Reduce the material obtained after roasting in step (2) by using a closed smelting furnace, and the closed furnace needs to maintain a negative pressure of 3000 Pa; in this process, it includes the first stage of negative pressure smelting, the second stage of negative pressure smelting and the third stage of negative pressure smelting:

[0076] 3.1 In the first stage of negative pressure smelting, the temperature is controlled at 350°C, and the residence time is 1 h;

[0077] 3.2 As the temperature continues to rise, in the second stage of negative pressure smelting, the temperature is 700°C, and the residence time is 3 min;

[0078] 3.3 As the temperature continues to rise, in the third stage of negative pressure smelting, the temperature is 1400°C, and the residence time is 0.1 h.

[0079] At this time, gallium and indium become vapor and volatilize with the flue gas, existing in gaseous form, but due to the short residence time in 3.2, some impurity elements are mixed in, and the purity of gallium and indium is only 4N, which does not meet the purity of the gallium-indium alloy raw material, and further purification is needed to prepare the gallium-indium alloy.

[0080] Comparative Example 2

[0081] The gallium-indium alloy raw material involved in this comparative example is vanadium extraction converter sludge and blast furnace gas mud, both of which are waste in the vanadium-titanium magnetite smelting process in Panxi. The composition range of the vanadium extraction converter sludge is 89wt% iron oxides, 2wt% SiO2, 1wt% ZnO, 1wt% Na2O, 0.3wt% MgO, 1wt% CaCO3, 0.2wt% Al2O3, 0.3wt% TiO2, 0.7wt% V2O5, 0.5wt% Cr2O3, 1wt% MnO, 1wt% PbO, 0.99wt% CuO, 0.5wt% NiO, and the balance is sulfide, and the gallium content in the raw material is 100g / t. The composition range of the blast furnace gas mud is 60wt% TFe, 5wt% Zn, 20wt% C, and the balance of other elements, including 1wt% Ca, 2wt% Ti, 2wt% Al, 1wt% Mg, 1wt% K, 1wt% Mn, 1wt% Na, 2wt% Cl, 1wt% Pb, 2wt% Si, and the balance is S. The indium content of the blast furnace gas mud in the vanadium-titanium magnetite smelting process in Panxi is 80g / t, and the carbon exists in the form of an element, the cations mainly exist in the form of oxides, and Na and K exist in the form of chlorides and sulfides.

[0082] The specific preparation method is as follows:

[0083] (1) The vanadium extraction converter sludge and the blast furnace gas mud are mixed, and the mass ratio of the vanadium extraction converter sludge to the blast furnace gas mud is 0.1:1;

[0084] (2) The vanadium extraction converter sludge and the blast furnace gas mud mixture are calcined, the calcination temperature is 400°C, and the calcination time is 1h;

[0085] (3) Using a closed smelting furnace, the material obtained after roasting in step (2) is reduced, the closed furnace uses normal pressure; in this process, it includes a first normal pressure smelting, a second normal pressure smelting and a third normal pressure smelting:

[0086] 3.1 In the first normal pressure smelting process, the temperature is controlled at 450°C, and stays for 1h;

[0087] 3.2 With the temperature continuing to rise, in the second normal pressure smelting process, the temperature is at 500°C, and stays for 1h;

[0088] 3.3 With the temperature continuing to rise, in the third normal pressure smelting process, the temperature is at 1000°C, and stays for 1h.

[0089] At this time, by detecting that there is almost no gallium in the smoke dust, other low melting point substances (such as lead, zinc, etc.) and a small amount of indium exist. It shows that in this method, the gallium and indium in the raw material need to be volatilized under the condition of negative pressure smelting, and other impurities are also well removed.

[0090] The above description of disclosed embodiments enables one skilled in the art to make or use the application. Numerous modifications to these embodiments will be apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the application. Therefore, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for producing a gallium-indium alloy, characterized by, The method comprises the following steps: The mixture of the gallium-containing waste and the indium-containing waste is roasted, subjected to negative pressure smelting, and then cooled to obtain liquid gallium-indium, which is mixed to obtain a gallium-indium alloy; The negative pressure smelting comprises first negative pressure smelting, second negative pressure smelting and third negative pressure smelting; The first negative pressure smelting is performed at a temperature of 350-450 DEG C for 0.1-1 h; The second negative pressure smelting is performed at a temperature of 500-700 DEG C for 0.1-1 h; The third negative pressure smelting is performed at a temperature of 1000-1400 DEG C for 0.1-1 h.

2. The production method according to claim 1, characterized by, The pressure of the negative pressure smelting is 3000-10000 Pa.

3. The production method according to claim 1 or 2, characterized by, The mass ratio of the gallium-containing waste to the indium-containing waste is (0.1-1):

1.

4. The production method according to any one of claims 1 to 3, characterized by, The gallium-containing waste comprises 89-95 wt% iron oxides, 0-2 wt% SiO2, 1-5 wt% ZnO, and less than 10 wt% of a combination of any one or more of Na2O, MgO, CaCO3, Al2O3, TiO2, V2O5, Cr2O3, MnO, PbO, CuO, NiO, chlorides or sulfides; The gallium content in the gallium-containing waste is 100-500 g / t.

5. The production method according to any one of claims 1 to 4, characterized by, The indium-containing waste comprises 40-62 wt% TFe, 5-15 wt% Zn, 8-20 wt% C, and less than 15 wt% of a combination of any one or more of Ca, Ti, Al, Mg, K, Mn, Na, Cl, Pb, Si, S; The indium content in the indium-containing waste is 40-100 g / t.

6. The production method according to any one of claims 1 to 5, characterized by, The roasting is performed at a temperature of 400-550 DEG C for 0.1-1 h.

7. The production method according to any one of claims 1 to 6, characterized by, The purity of the gaseous gallium-indium obtained after the negative pressure smelting is 6-8N.

8. The production method according to any one of claims 1 to 7, characterized by, The cooling is performed in an inert atmosphere; The cooling temperature is 31-50 DEG C.

9. The production method according to any one of claims 1 to 8, characterized by, The mixing is performed under stirring; The mixing time is 0.5-2 h.

10. The production method according to any one of claims 1 to 9, characterized by, The mass ratio of gallium to indium in the gallium-indium alloy is (10-60):(40-90).