Light-emitting device and method for manufacturing same

Abstract

The present invention improves the accuracy of positioning when a light-emitting element is bonded onto a conducting member using solder. This light-emitting device 100 is provided with: a pair of conducting members 20 that are disposed separated from each other; solder 30 that is disposed on an upper surface of each of the pair of conducting members 20; and a light-emitting element 10 that is provided with a semiconductor layer body 11 and a pair of electrodes 12 that are disposed on a lower surface of the semiconductor layer body 11, the upper surfaces of the pair of conducting members 20 and the pair of electrodes 12 being bonded via the solder 30. The upper surfaces of the pair of conducting members 20 each comprise a flat surface and a processed section 80 that is provided with a contour. The processed section 80 includes, in a region overlapping with the light-emitting element 10 in top view, a first processed section 81 disposed in a first region facing the pair of conducting members 20 and a second processed section 82 disposed in part of a second region located so as to overlap with or follow the outline of the light-emitting element 10.

Description

Light-emitting device and method for manufacturing the same

[0001] The present disclosure relates to a light-emitting device and a method for manufacturing the same.

[0002] A light-emitting device in which a light-emitting element is soldered onto a metal conductive member has been proposed (for example, Patent Document 1). In such a light-emitting element, positioning is performed by self-alignment using solder.

[0003] However, when solder is placed on the conductive member, the solder may flow out in an unintended direction, making it difficult to arrange the light-emitting element at the intended position.

[0004] Japanese Patent No. 6776800

[0005] One of the problems of one aspect of the present disclosure is to provide a light-emitting device and a method for manufacturing the same, which improve the positioning accuracy when joining a light-emitting element to a conductive member using solder. Another problem of another aspect is to provide a light-emitting device and a method for manufacturing the same that can control the outflow of solder. Note that the description of these problems does not prevent the existence of other problems. Also, one aspect of the present disclosure does not need to solve all of these problems. Furthermore, other problems can be extracted from the description of the specification, drawings, and claims of the present disclosure.

[0006] A light-emitting device according to one embodiment of the present disclosure includes a pair of conductive members arranged apart from each other, solder respectively disposed on the upper surfaces of the pair of conductive members, a semiconductor laminate, and a pair of electrodes disposed on the lower surface of the semiconductor laminate. The light-emitting device is a light-emitting element in which the upper surfaces of the pair of conductive members and the pair of electrodes are joined via the solder. The upper surfaces of the pair of conductive members have a flat surface and a processed portion having irregularities. The processed portion includes a first processed portion disposed in a first region facing the pair of conductive members among the regions overlapping the light-emitting element in a top view, and a second processed portion disposed in a part of a second region that overlaps or is along the contour of the light-emitting element.

[0007] A method for manufacturing a light-emitting device according to another embodiment of the present disclosure includes a step of preparing a conductive member intermediate including a pair of conductive member portions on which a light-emitting element can be mounted, wherein the upper surface of the pair of conductive member portions is a flat surface, and the intermediate has a first region facing the pair of conductive members and a second region which is located at a position overlapping with the contour of the light-emitting element or along the contour, in a top view of the region overlapping with the light-emitting element; a processing step of irradiating the upper surface of the pair of conductive member portions with laser light to form a processed portion to form a conductive member; a soldering step of placing solder in the second region; a light-emitting element placement step of placing the light-emitting element on the solder; and a connection step of heating and melting the solder, then cooling it to connect the light-emitting element to the pair of conductive members, wherein the processing step includes a step of irradiating the portion of the pair of conductive member portions facing each other with laser light in the first region to form a first processed portion and a step of irradiating a part of the second region with laser light to form a second processed portion.

[0008] According to one embodiment of the present disclosure, the thickness of the solder located beneath the light-emitting element can be controlled, thereby reducing its tilt. Furthermore, the first processing section makes it difficult for a short circuit to occur between the pair of electrodes. In addition, the light-emitting element is less prone to misalignment, improving self-alignment and allowing the desired light distribution characteristics to be obtained. Moreover, according to the manufacturing method of the light-emitting device according to another embodiment, when soldering the light-emitting element onto a conductive member, the processing section can restrict the outflow of molten solder in an unintended direction.

[0009] This is a schematic top view showing a light-emitting device according to an embodiment. This is a schematic cross-sectional view of the light-emitting device in Figure 1 along line II-II. This is a schematic top view showing a pair of conductive members of the light-emitting device in Figure 1. This is a schematic top view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic top view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic top view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic top view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic top view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a pair of conductive members of the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a light-emitting device according to an embodiment. This is a schematic top view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic top view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic top view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic top view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic top view showing a manufacturing process for the light-emitting device according to an embodiment. This is a schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic top view showing the manufacturing process of the light-emitting device according to the embodiment. This is a top view of the light-emitting device according to the embodiment. This is a cross-sectional view of the light-emitting device of Figure 16A along the line XVIB-XVIB. This is a cross-sectional view of the light-emitting device of Figure 16A along the line XVIC-XVIC. This is a top view of the light-emitting device according to the embodiment. This is a cross-sectional view of the light-emitting device of Figure 17A along the line XVIIB-XVIIB. This is a top view of the light-emitting device according to the embodiment. This is a schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic top view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic top view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic cross-sectional view showing the manufacturing process of the light-emitting device according to the embodiment. This is a schematic top view showing the manufacturing process of the light-emitting device according to the embodiment.

[0010] The embodiments of this disclosure will be described below with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "up," "down," and other terms including these terms) may be used as needed. The use of these terms is for the purpose of facilitating the understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of this disclosure. Also, parts with the same reference numerals appearing in multiple drawings indicate the same or equivalent parts or components. Furthermore, viewing an object directly or through it from above downwards is called a top view.

[0011] Furthermore, the embodiments described below illustrate specific examples of the technical concept of this disclosure and do not limit this disclosure to the following. Also, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are intended to be illustrative, and not to limit the scope of this disclosure unless specifically stated. Furthermore, the content described in one embodiment or example is applicable to other embodiments and examples. Moreover, the size or positional relationships of the members shown in the drawings may be exaggerated to clarify the explanation. In addition, in order to avoid the drawings becoming excessively complex, schematic diagrams that omit the illustration of some elements may be used, or end view diagrams that show only the cross-section may be used as cross-sectional views. On the other hand, for materials whose form changes during the process, such as resin materials, for example, members that are liquid before curing and solid after curing, the same reference numerals are used before and after curing.

[0012] [Embodiment 1] A light-emitting device 100 according to Embodiment 1 is shown in Figures 1 to 3. The light-emitting device 100 shown in these figures comprises a pair of conductive members 20, solder 30, and a light-emitting element 10. The light-emitting device 100 may further comprise a light-transmitting member 40, a covering member 50, and a bonding member 60. The pair of conductive members 20 are arranged spaced apart from each other, as shown in Figure 1. The solder 30 is placed on the upper surfaces of the pair of conductive members 20. The light-emitting element 10 comprises a semiconductor laminate 11 and a pair of electrodes 12 placed on the lower surface of the semiconductor laminate 11. The pair of electrodes 12 of the light-emitting element 10 are bonded to the upper surfaces of the pair of conductive members 20 via the solder 30. In the example of Figure 2, the light-emitting element 10 is placed so that the electrode surface having a positive and negative pair of electrodes 12 faces the conductive member 20.

[0013] The upper surfaces of the pair of conductive members 20 have a first region 23, a second region 24, and a third region 25. The first region 23 is the region that overlaps with the light-emitting element 10 in a top view, and is located on the side facing the pair of conductive members 20 and in its vicinity. The second region 24 is the region that overlaps with or follows the contour of the light-emitting element 10 in a top view. The third region 25 is the region of the upper surface of the pair of conductive members 20 that is outside the second region 24 in a top view. Before the step of placing the light-emitting element 10, solder 30 is placed in the region enclosed by the first region 23 and the second region 24.

[0014] The upper surfaces of the pair of conductive members 20 have a flat surface 86 and a processed portion 80 with irregularities. The processed portion 80 has a first processed portion 81 and a second processed portion 82. The first processed portion 81 is located in the first region 23. The second processed portion 82 is located in a part of the second region 24. In other words, the second region 24 includes the second processed portion 82 with irregularities and the flat surface 86. The area enclosed by the first region and the second region, that is, the area that overlaps with the light-emitting element 10 in a top view, is mostly the flat surface 86. In the example shown in Figure 1, etc., all of the flat surfaces 86 are located on the same plane.

[0015] During the manufacturing process, the molten solder 30 spreads easily on the flat surface 86 of the upper surface of the conductive member 20, but spreads less easily on the uneven processed area 80 than on the flat surface 86. The conductive member 20 is composed of a base material mainly composed of copper and a plating placed on the surface of the base material. The plating can be a laminated structure in which nickel, palladium, and gold are layered in that order. It is preferable that nickel is partially exposed in the processed area 80. For example, when the processed area 80 is formed by irradiation with laser light, an uneven surface is formed, and a nickel layer, which has poor wettability with the solder 30, is exposed from the gold layer, which has good wettability with the solder 30. By placing an area where the nickel layer is exposed in a part of the processed area 80, it is possible to make it difficult for the solder 30 to spread beyond that processed area 80. In other words, the processed area 80 formed by irradiation with laser light can function as a part that physically controls the spread of the solder 30 by the uneven surface, and also chemically controls the spread of the solder 30 by placing a material such as nickel, which has poor wettability with the solder 30.

[0016] For example, if the upper surface of the conductive member 20 is not provided with a processed area including irregularities, it is difficult to control the spread of the solder 30, making it easy for the light-emitting element 10 to shift from the intended position. In other words, the self-alignment is poor. Also, if the entire second region 24 is provided with a second processed area 82, the area in which the solder 30 spreads is limited to the area enclosed by the first region and the second region. If there is variation in the amount of solder 30 placed on the upper surface of the conductive member 20, the solder 30 does not easily spread outside this enclosed area, resulting in variations in the height of the solder 30 on each of the pair of conductive members 20, which may cause the light-emitting element 10 to tilt.

[0017] In the light-emitting device 100 according to this embodiment, a pair of conductive members 20 are provided with first processing sections 81 in first regions 23 located on opposing sides and in the vicinity thereof. This makes it difficult for the solder 30 to spread (droop) on the sides of the conductive members 20.

[0018] Furthermore, in a top view, a portion of the second region 24 that overlaps with the contour of the light-emitting element 10 is the second processed portion 82, and a portion is a flat surface 86. In addition, the third region 25 located outside the second region 24 has a flat surface 86 that is continuous with the flat surface 86 of the second region 24. In other words, it has a flat surface 86 that allows the solder 30 to spread outside the second region 24. In the example shown in Figure 3, the second processed portion 82 is partially located in the second region 24 of the conductive member 20. That is, the second region 24 has a flat surface 86 that is continuous with the flat surface 86 of the third region 25. The solder 30 can spread to the third region 25 via this flat surface 86 of the second region 24. Note that in Figure 3, the contour of the light-emitting element 10 arranged on the conductive member 20 is shown by a dashed line, and the same applies to the following figures.

[0019] As in this embodiment, since a part of the second region 24 is a processing area 80 and a part is a flat surface 86, the spread of the solder 30 can be partially restricted, and it can spread to the flat surface 86 and the third region 25 outside of it at the intended location.

[0020] Furthermore, a portion of the solder 30 can be placed in the second processing section 82. Since the second processing section 82 has a larger contact area with the solder 30 compared to the flat surface 86, the adhesion between the solder 30 and the conductive member 20 can be improved.

[0021] Furthermore, the width of the first processing section 81 can be the same as or wider than the width of the second processing section 82. Preferably, the width of the first processing section 81 is wider than the width of the second processing section 82. This reduces the risk of molten solder 30 spreading between the pair of electrodes 12 between the conductive members 20 and causing a short circuit, by making the first processing section 81 wider.

[0022] The following describes each component in detail. As shown in Figures 1 and 2, the light-emitting device 100 comprises a conductive member 20, at least one light-emitting element 10 disposed on the conductive member 20 via solder 30, a light-transmitting member 40 disposed on the light-emitting element 10, and a covering member 50 that covers the side surface of the light-emitting element 10. More specifically, the conductive member 20 includes a first conductive member 21 and a second conductive member 22. The first conductive member 21 and the second conductive member 22 each comprise an upper surface, a lower surface opposite the upper surface, and a side surface between the upper and lower surfaces.

[0023] The light-emitting element 10 is joined to the upper surface of the first conductive member 21 and the upper surface of the second conductive member 22 via solder 30. The light-transmitting member 40 is placed on the upper surface of the light-emitting element 10. The covering member 50 covers the upper surface of the first conductive member 21, the upper surface of the second conductive member 22, and the side surface of the light-emitting element 10.

[0024] (Conductive Member 20) The conductive member 20, including the first conductive member 21 and the second conductive member 22, primarily functions as an electrode for the light-emitting device 100. When it is not necessary to distinguish between the first conductive member 21 and the second conductive member 22, they will simply be described as "conductive member" without specifying "first" and "second." The conductive member may also be composed of three or more conductive members. Furthermore, the conductive member may include conductive members that do not contribute to current flow. Conductive members that do not contribute to current flow can, for example, function as heat dissipation members.

[0025] The conductive member 20 is a plate-shaped metal member patterned into a predetermined shape, and comprises a base material and a plating formed on its surface.

[0026] Examples of base material include metals such as Cu, Al, Ag, Au, Zn, Cr, W, Co, Ni, Rh, and Ru, or alloys thereof. These may be single layers or laminated structures (e.g., clad materials). Metal plates containing 90% or more Cu as the main component are preferred. Trace elements such as Si and / or P (nonmetals) may also be included.

[0027] The thickness of the substrate is preferably, for example, 100 μm to 800 μm, and more preferably 300 μm to 800 μm.

[0028] For the plating placed on the surface of the substrate, a material with a higher reflectivity than the substrate is preferred. Examples of plating materials include Ni, Ag, Au, Pt, Pd, Al, W, Mo, Ru, and Rh. Examples of laminated structures include Ni / Pd / Au, Ni / Pt / Au, and Ni / Au / Ag, with Ni / Pd / Au being particularly preferred.

[0029] The plating thickness is preferably between 1 μm and 10 μm, and more preferably between 1.5 μm and 6 μm.

[0030] The conductive member 20 comprises an upper surface, a lower surface opposite the upper surface, and a side surface between the upper and lower surfaces. A portion of the side surface of the conductive member 20 is exposed to the outside on the side surface of the light-emitting device 100. In the portion of the conductive member 20 embedded in the covering member 50, the side surface consists only of a curved surface, or includes both a curved surface and a flat surface. The side surface of the conductive member 20 that is continuous with the upper surface exposed to the outside is not a curved surface, but a flat surface.

[0031] The upper surfaces of the first conductive member 21 and the second conductive member 22 are provided with a flat surface 86 that is positioned on the same plane and is not exposed to the outside. Also, as shown in Figure 3, the upper surfaces of the first conductive member 21 and the second conductive member 22 are each provided with a processed portion 80. The processed portion 80 is concave, convex, or uneven in cross-sectional view. The height or depth of the processed portion 80 from the flat portion of the upper surface of the conductive member 20 can be, for example, 1 μm to 10 μm. The width of the processed portion 80 (width in the direction perpendicular to the stretching direction) can be, for example, 10 μm or more and 100 μm or less in a top view.

[0032] The processed portion 80 can be formed, for example, by irradiating a flat surface, such as the upper surface, with laser light. By irradiating the conductive member 20 with laser light and scanning it, a desired processed portion 80 can be formed on the conductive member 20. The processed portion 80 formed by laser light irradiation is formed by irradiating the laser light in a pulsed manner. In each drawing, the shape of the processed portion 80 is shown as a series of circles formed by laser light irradiation marks for illustrative purposes. However, the configuration is not limited to determining the laser light irradiation position so that adjacent circles touch; the laser light may be irradiated so that the circular laser light irradiation marks overlap.

[0033] The wavelength of the laser light can be selected depending on the material of the conductive member 20 and / or the plating. For example, if a copper conductive member 20 with a thickness of 0.3 mm is provided with plating in the order of nickel, palladium, and gold, the processed part 80 can be formed by irradiating and scanning with laser light with a main wavelength λ = 532 nm.

[0034] Furthermore, the processed portion 80 can be formed by pressing with a mold, etching, blasting, etc. For example, when plating a laminated structure on the surface of a Cu-based substrate of the conductive member 20, with Au as the outermost layer and Ni in the lower layer, it is preferable that Ni is exposed in the processed portion 80. This effectively reduces the flow of solder 30 to unintended areas.

[0035] (Solder 30) Solder 30 is a conductive member that electrically connects the positive and negative pair of electrodes 12 of the light-emitting element 10 to the conductive member 20. One of the electrodes 12 of the light-emitting element 10 is electrically joined to the first conductive member 21 via solder 30, and the other of the electrodes 12 of the light-emitting element 10 is electrically joined to the second conductive member 22 via solder 30. It is preferable that the solder 30 is in contact with the entire lower surface of the electrodes 12 of the light-emitting element 10. Between the light-emitting element 10 and the upper surface of the conductive member 20, the thickness of the solder 30 can be 5 μm or more and 5 μm or more and 20 μm or less.

[0036] Examples of materials for solder 30 include Au-Sn, Sn-Ag-Cu, Sn-Cu, Sn-Sb, Sn-Bi, Sn-In, Sn-Pb, Ni-Sn, etc.

[0037] (Light-emitting element 10) The light-emitting device 100 may be equipped with one or more light-emitting elements 10. As the light-emitting element 10, for example, a semiconductor light-emitting element such as a light-emitting diode can be used. The light-emitting element 10 comprises a semiconductor laminate 11 and a pair of positive and negative electrodes 12. The semiconductor laminate 11 comprises, for example, an element substrate such as sapphire and a semiconductor layer formed thereon. Alternatively, the semiconductor laminate 11 may consist only of semiconductor layers without an element substrate. The top view shape of the light-emitting element 10 can be a polygon such as a triangle, square, or hexagon. The size of the light-emitting element 10 can be, for example, a square with sides of 100 μm or more and 3000 μm or less when viewed from above. Specifically, it can be a square with sides of about 600 μm, 1000 μm, 1400 μm, 1700 μm, etc. Also, the light-emitting element 10 may be a rectangle with a long side and a short side when viewed from above. For example, it can be 1100 μm × 200 μm in size. When multiple light-emitting elements 10 are provided, the size, emission wavelength, composition, etc. of each light-emitting element 10 may be the same, or some or all of them may be different. Furthermore, all of the multiple light-emitting elements 10 can be connected in series or in parallel, or they can be connected in a mixed series and parallel configuration.

[0038] The semiconductor laminate 11 includes an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer sandwiched between them. Such a semiconductor laminate including a light-emitting layer is, for example, made of In x Al y Ga 1-x-y It can include N (0 ≤ x, 0 ≤ y, x + y ≤ 1).

[0039] The semiconductor laminate 11 may have a structure that includes one or more light-emitting layers between an n-type semiconductor layer and a p-type semiconductor layer, or it may have a structure in which a structure containing an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence is repeated multiple times. When the semiconductor laminate 11 includes multiple light-emitting layers, it may include light-emitting layers with different emission peak wavelengths, or it may include light-emitting layers with the same emission peak wavelength. Note that "the same emission peak wavelength" includes cases where there is a variation of several nanometers. The combination of emission peak wavelengths between the multiple light-emitting layers can be selected as appropriate. For example, when the semiconductor laminate includes two light-emitting layers, the light-emitting layers can be selected in combinations such as blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, blue light and red light, or green light and red light.

[0040] The light-emitting element 10 is provided with at least one pair of electrodes 12 on the lower side of the semiconductor laminate 11. In other words, one light-emitting element 10 is provided with at least one positive electrode and at least one negative electrode as electrodes 12. In the light-emitting device 100 shown in Figure 2, there is one positive electrode and one negative electrode each of the light-emitting elements 10. The positive electrode and the negative electrode are both rectangular in shape when viewed from above. When there is only one positive electrode and one negative electrode, their respective sizes can be increased. This increases the contact area with the solder 30, thereby improving heat dissipation.

[0041] The electrodes 12 of the light-emitting element 10 can be made of electrically good conductors, such as gold, silver, copper, platinum, iron, nickel, or alloys thereof. The electrodes 12 may include an ohmic electrode that contacts the lower surface of the semiconductor laminate 11 and a pad electrode that is connected to the ohmic electrode and connected to the outside. The thickness of the electrodes 12 can be, for example, 0.5 μm or more and 50 μm or less, more preferably 5 μm or more and 20 μm or less.

[0042] (Light-transmissive member 40) The light-transmissive member 40 is a light-transmissive member arranged to cover the upper surface of the semiconductor laminate 11 of the light-emitting element 10. The light emitted from the light-emitting element 10 is emitted to the outside through the light-transmissive member 40. In the light-emitting device 100 shown in FIG. 2 and the like, light is emitted to the outside from the upper surface of the light-transmissive member 40. As the light-transmissive member 40, a resin member, an inorganic member, glass, or a combination thereof can be used. It is preferable that the light-transmissive member 40 has a light transmittance of 60% or more, more preferably 70% or more, and even more preferably 80% or more for light having a peak wavelength of the light emitted from the light-emitting element 10.

[0043] As the resin member of the light-transmissive member 40, thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenol resin, and thermoplastic resins such as polycarbonate resin, acrylic resin, methylpentene resin, and polynorbornene resin can be used. In particular, a silicone resin having excellent light resistance and heat resistance is suitable. As the inorganic member of the light-transmissive member 40, silicon oxide, aluminum oxide, etc. can be used. As the glass, non-alkali glass, soda glass, soda-lime glass, borosilicate glass, aluminosilicate glass, quartz glass, low-alkali borosilicate glass, etc. can be used.

[0044] The light-transmissive member 40 may be composed only of these light-transmissive members, or may be a material containing a phosphor and / or a light-scattering agent that is excited by the light from the light-emitting element 10 and converted into light of a different wavelength using these light-transmissive members as a base material.

[0045] As the phosphor, yttrium aluminum garnet-based phosphors, lutetium aluminum garnet-based phosphors, terbium aluminum garnet-based phosphors, CCA-based phosphors, SAE-based phosphors, chlorosilicate-based phosphors, silicate-based phosphors, oxynitride-based phosphors such as β-sialon-based phosphors or α-sialon-based phosphors, LSN-based phosphors, BSEN-based phosphors, SLA-based phosphors, nitride-based phosphors such as CASN-based phosphors or SCASN-based phosphors, fluoride-based phosphors such as KSF-based phosphors, KSAF-based phosphors or MGF-based phosphors, quantum dots having a perovskite structure, II-VI group quantum dots, III-V group quantum dots, or quantum dots having a chalcopyrite structure, etc. can be used.

[0046] As the light scattering agent, for example, particles such as titanium oxide, silicon oxide, aluminum oxide, zinc oxide, magnesium oxide, zirconium oxide, yttrium oxide, calcium fluoride, magnesium fluoride, niobium pentoxide, barium titanate, tantalum pentoxide, barium sulfate, or glass can be used.

[0047] The light-transmissive member 40 can be prepared in advance as a plate-shaped member and arranged on the light-emitting element 10 using the light-transmissive joining member 60. In the example shown in FIG. 2, the joining member 60 is thinly arranged between the light-emitting element 10 and the light-transmissive member 40 and covers the side surface of the light-emitting element 10. Also, the light-emitting element 10 and the light-transmissive member 40 may be directly joined by a direct bonding method or the like without using the joining member 60. Further, a liquid resin material can be arranged on the light-emitting element 10 and then cured to form the light-transmissive member 40. Alternatively, a light-transmissive member 40 on a thin film may be arranged on the light-emitting element 10 using a film-forming method such as sputtering, vapor deposition, or atomic deposition.

[0048] As shown in Figure 1, the translucent member 40 may have an area larger than the area of ​​the light-emitting element 10 when viewed from above, or it may have the same area as the light-emitting element 10. Furthermore, it is preferable that the translucent member 40 overlaps the entire surface of the light-emitting element 10 when viewed from above. For example, the translucent member 40 can overlap the entire upper surface of the light-emitting element 10 when viewed from above and be larger in size than the light-emitting element 10. A translucent member 40 larger in size than the light-emitting element 10 can continuously cover the light-emitting element 10 and the covering member 50, as shown in Figure 1 or Figure 2. The side surfaces of the translucent member 40 may be covered by the covering member 50, or they may be exposed from the covering member 50, as shown in Figure 2.

[0049] (Covering member 50) The covering member 50 covers the upper surface of the first conductive member 21, the upper surface of the second conductive member 22, and the side surface of the light-emitting element 10. The covering member 50 can cover the side surface of the light-emitting element 10 in contact with it. Alternatively, if the joining member 60 that joins the light-transmitting member 40 and the light-emitting element 10 covers a part of the side surface of the light-emitting element 10, the covering member 50 covers the side surface of the light-emitting element 10 via the joining member 60. The covering member 50 also covers the lower surface of the semiconductor laminate 11 of the light-emitting element 10. Furthermore, the covering member 50 covers the solder 30 that covers the first conductive member 21 and the second conductive member 22. The covering member 50 can be in contact with the lower surface of the light-transmitting member 40. The covering member 50 can also cover the side surface of the light-transmitting member 40.

[0050] The covering member 50 can be light-reflective, light-absorbing, or light-transmitting. A resin member can be used as the base material for the covering member 50. As the resin member, thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenolic resin, and thermoplastic resins such as polycarbonate resin, acrylic resin, methylpentene resin, and polynorbornene resin can be used. Silicone resin, which has excellent light resistance and heat resistance, is particularly preferred. When using a resin member, the covering member 50 can be molded by compression molding or transfer molding after joining the light-emitting element 10 and the conductive member 20 with solder 30. In this case, the resin member may be molded using a pre-molten resin member, or powdered resin member may be placed to cover the light-emitting element 10 and the conductive member 20, etc., and then molded by compression molding.

[0051] The coating member 50 may contain light-reflecting materials such as titanium oxide or zinc oxide. Alternatively, the coating member 50 may contain light-absorbing materials such as carbon black or titanium black. The coating member 50 may contain both light-reflecting and light-absorbing materials. In that case, both light-reflecting and light-absorbing materials can be contained in a single base material. Alternatively, the coating member 50 may comprise a first light-reflecting coating member in contact with the light-emitting element 10, and a second light-absorbing coating member on the outside of the first coating member.

[0052] Furthermore, the coating member 50 may be composed of an inorganic material containing, for example, boron nitride or alkali metal silicate. In this case, it may further contain titanium oxide or zirconium oxide.

[0053] Furthermore, the covering member 50 may include both a portion made of a resin material and a portion made of an inorganic material.

[0054] If the covering member 50 is light-reflective, it is preferable that the reflectance for light at the emission peak wavelength of the light emitted from the light-emitting element 10 is 70% or more, more preferably 80% or more, and even more preferably 90% or more.

[0055] [Embodiment 2] The processing section 80 may also have one or more third processing sections 83. The third processing section 83 is continuous with the first processing section 81 or the second processing section 82 and extends into the third region 25. With this configuration, when the light-emitting element 10 is joined to the conductive member 20 via solder 30, the excess molten solder 30 can be spread onto the flat surface 86 of the third region 25, which is continuous with the flat surface 86 of the second region 24. In the example shown in Figure 4A, the solder can be spread onto the flat surface 86 of the third region 25, which is sandwiched between the third processing sections 83 that extend into the third region 25. In addition, by spreading a portion of the solder 30 around the light-emitting element 10, the heat dissipation of the light-emitting device can be improved.

[0056] In the example shown in Figure 4A, the third processing section 83 of the processing section 80 of the conductive member 20 is arranged to connect with the second processing section 82 at two points. By shaping the processing section 80 in this way, excess solder 30 can be spread into the area surrounded by the third processing section 83. This improves self-alignment and reduces the tilt of the light-emitting element. In the example shown in Figure 4A, one third processing section 83 is provided in each of the first conductive member 21 and the second conductive member 22, at a position corresponding to the center of the side of the light-emitting element. In the example shown in Figure 4B, two third processing sections 83 are provided in each of the first conductive member 21 and the second conductive member 22. In other words, one third processing section 83 is provided at each of the four corners of the light-emitting element.

[0057] [Embodiment 3] In the example shown in Figure 5, the processing section 80 comprises two sub-processing sections 85. Specifically, each of the pair of conductive members 20 is provided with two sub-processing sections 85. In other words, in a top view, each of the pair of electrodes 12 of the light-emitting element 10 overlaps with the two sub-processing sections 85. In one conductive member 20, each sub-processing section 85 is arranged spaced apart from each other. Each sub-processing section 85 has a second processing section 82 in a part of the position that overlaps with the contour of the light-emitting element 10 in a top view. Furthermore, it has a third processing section 83 that is continuous with the second processing section 82. It also has a first processing section 81 that is connected to the second processing section 82 and is located near the opposing sides of the pair of conductive members 20. Furthermore, it has a fourth processing section 84 that is continuous with the first processing section 81 and the second processing section 82. The solder 30, which is placed on the flat surface 86 surrounded by the first processing section 81, the second processing section 82, and the fourth processing section 84, spreads in the area surrounded by the third processing section 83 when it melts. Multiple sub-processing sections 85 are provided at positions that overlap with one electrode 12 in a top view, and each sub-processing section 85 is connected to the first processing section 81 to the fourth processing section 84 to form a closed shape, and the solder 30 is placed in this enclosed area. Compared to the case where one processing section 80 is provided for one electrode, providing two or more sub-processing sections 85 for one electrode further restricts the area in which the solder 30 spreads, making it less likely for misalignment to occur.

[0058] [Embodiment 4] A pair of conductive members 20 of the light-emitting device according to Embodiment 4 is shown in Figure 6. In the example shown in Figure 6, the second processing section 82, which is located in a part of the second region 24 of the processed section 80 of the conductive member 20, and the first processing section 81 are arranged at a distance from each other. In addition, multiple second processing sections 82 are also arranged at a distance from each other. In other words, compared to Embodiment 1, the proportion of the flat surface 86 is larger than that of the second processing section 82 in the second region. Multiple third processing sections 83 are provided that are continuous with the second processing section 82. By making the processing section 80 this shape, excess solder 30 does not remain at the bottom of the light-emitting element 10, but spreads outwards from the bottom of the light-emitting element 10. This improves self-alignment and reduces the tilt of the light-emitting element. Also, in the example shown in Figure 6, in a top view, the third processing sections 83 are arranged on all four sides of the rectangular outline of the light-emitting element 10. This makes it possible to arrange areas in which the solder 30 spreads not only in the horizontal direction but also in the vertical direction in a top view.

[0059] [Embodiment 5] In the conductive member 20 shown in Figure 7, a third processing section 83 is positioned between the first processing section 81 and the second processing section 82. Here, the third processing section 83 includes a portion that extends in the same direction as the extension direction of the second processing section 82, and a straight portion that connects the end of the extending portion to the end of the first processing section 81. Therefore, the processing section 80 as a whole is trapezoidal. However, the shape of the third processing section 83 is not limited to this, and for example, it may be shaped such that it connects the end of the first processing section 81 and the end of the second processing section 82 with a curve such as an arc.

[0060] [Embodiment 6] The light-emitting device may also include a protective element 70. The protective element 70 is a member for protecting the light-emitting element 10, and an example of this is a Zener diode that protects the light-emitting element 10 from a reverse voltage applied to the light-emitting element 10. It is preferable that the protective element 70 is arranged alongside the light-emitting element 10 so as to straddle a pair of conductive members 20. An example of this is shown in Figure 8 as a pair of conductive members 20 of the light-emitting device 200 according to Embodiment 6.

[0061] The light-emitting device 200 shown in Figure 8 has a larger area of ​​the conductive member 20 compared to Figure 1, and in Figure 8, the light-emitting element 10 is positioned on the upper side and the protective element 70 is positioned on the lower side. The light-emitting element 10 and the protective element 70 are positioned on a flat surface 86 located on the same plane of the conductive member 20, and the processed part 80 includes a processed part 80 around the light-emitting element 10 and a processed part 80 around the protective element 70. The processed part 80 around the protective element 70 can be read as "protective element 70" instead of "light-emitting element 10" in the description of the processed part 80 around the light-emitting element 10. By providing such a processed part 80, it is possible to reduce the flow of solder 30 to unintended areas when joining the protective element 70.

[0062] (Protection element 70) As shown in Figure 8, the protection element 70 is arranged to straddle the upper surface of the first conductive member 21 and the second conductive member 22. The protection element 70 comprises an element portion and a pair of positive and negative electrodes arranged on the lower surface of the element portion, and is connected in parallel with the light-emitting element 10. In the case of a protection element 70 having polarity, such as a Zener diode, it is connected in the opposite direction to the light-emitting element 10. In the case of a protection element 70 that does not have polarity, such as a varistor, it is connected in the forward or reverse direction to the light-emitting element 10.

[0063] [Embodiment 7] The present disclosure may also omit the second processing section 82. In other words, the processing section 80 may consist only of the first processing section 81. An example of this is shown in Figure 9 as a pair of conductive members 20 of the light-emitting device according to Embodiment 7. The conductive members 20 shown in Figure 9 have a first conductive member 21 and a second conductive member 22, each having a linear first processing section 81 on the sides (first region 23) that are separated from and facing each other. In the second region 24, only a flat surface 86 is located, except for the portion that overlaps with the first region 23. By providing such a first processing section 81, when the light-emitting element 10 is placed, the spreading (sagging) between the positive and negative electrodes 12 of the light-emitting element 10 can be reduced.

[0064] [Embodiment 8] The light-emitting device 300 shown in Figure 10 comprises a resin package 52, at least one light-emitting element 10C, a light-transmitting member 40C, and a covering member 50C. The light-emitting device 300 may further include a protective element. The resin package 52 has a first conductive member 21C and a second conductive member 22C that constitute a conductive member 20C, and a covering member 50C. The covering member 50C holds the first conductive member 21C and the second conductive member 22C. At least one light-emitting element 10C is placed on the resin package 52.

[0065] Even in such a light-emitting device, by including the processing section 80 shown in other embodiments, it is possible to reduce the flow of solder 30 to unintended areas and reduce the tilt of the light-emitting element 10C.

[0066] [Modified Example] Figures 16A to 16C illustrate a modified example of the light-emitting device 400. In the light-emitting device 100 shown in Figure 1, etc., the flat surface 86, which is part of the upper surface 26 of the conductive member 20, is entirely located on the same plane. In contrast, in the light-emitting device 400, the upper surface 26 of the conductive member 20 has upper surfaces located at different heights. More specifically, the upper surface 26 of the conductive member 20 of the light-emitting device 400 includes a first upper surface 261 located in a position that overlaps with the light-emitting element 10 in a top view, and a second upper surface 262 located outside the first upper surface 261 and at a lower position than the first upper surface 261. The first upper surface 261 and the second upper surface 262 are connected by an intermediate surface 263, which is a curved surface in cross-sectional view, as shown in Figures 16B and 16C. However, the intermediate surface 263 may be a flat surface perpendicular or inclined to the first upper surface 261 or the second upper surface 262.

[0067] As shown in Figures 16B and 16C, in the light-emitting device 400, the covering member 50 covers the upper surface 26 of the conductive member 20 and is also in contact with the light-emitting element 10 and the light-transmitting member 40. The upper surface 26 of the conductive member 20 has a first upper surface 261 on which the light-emitting element 10 is placed, and a second upper surface 262 located further out and at a lower position (below) than the first upper surface 261. With this configuration, in a top view, the lower end of the covering member 50 is located below the lower end of the covering member 50 directly below the light-emitting element 10, outside the light-emitting element 10 or outside the light-transmitting member 40. In other words, the lower end of the covering member 50 is located on the second upper surface 262, which is located diagonally downward when viewed from the lower surface of the semiconductor laminate 11 of the light-emitting element 10 or the lower surface of the light-transmitting member 40. Therefore, when the covering member 50 undergoes thermal expansion, an expansion force acts diagonally on the covering member 50 located between the light-emitting element 10 and the second upper surface 262 of the conductive member 20. This makes it less likely for the vertical expansion force in the covering member 50 to act on the light-emitting element 10 or the light-transmitting member 40. Furthermore, it is possible to reduce bonding defects due to cracks inside the solder 30 or bonding defects of the light-emitting element 10 due to delamination at the interface between the electrode 12 and the conductive member 20.

[0068] In the light-emitting device 400, all of the processing sections 80, namely the first processing section 81, the second processing section 82, and the third processing section 83, are located on the first upper surface 261. In a top view, the second upper surface 262 and the intermediate surface 263 are located outside of these processing sections 80. In other words, the processing sections 80 are not located on the second upper surface 262 and the intermediate surface 263. Therefore, the solder 30 is not located on the second upper surface 262 and the intermediate surface 263, but only on the first upper surface 261. The covering member 50 is located on the second upper surface 262 and the intermediate surface 263. By having such a structure with a second upper surface 262, when the covering member 50 undergoes thermal expansion, an expansion force is more likely to act on the covering member 50 between the light-emitting element 10 and the second upper surface 262 of the conductive member 20 in a more oblique direction.

[0069] Furthermore, by having the upper surface 26 of the conductive member 20 of the light-emitting device 400 comprise a first upper surface 261, a second upper surface 262, and an intermediate surface 263, the contact area between the covering member 50 and the conductive member 20 can be increased compared to the case where a conductive part 20 without the second upper surface 262 and the intermediate surface 263 is used. This improves the adhesion between the conductive member 20 and the covering member 50.

[0070] Furthermore, in the light-emitting device 400, the first upper surface 261 is located in a position that overlaps with the light-emitting element 10 when viewed from above, and also overlaps with the light-transmitting member 40. The second upper surface 262 is located in a position that does not overlap with the light-transmitting member 40. By adopting this configuration, the contact area between the covering member 50 and the conductive member 20 can be increased compared to the case in which a conductive member 20 without the second upper surface 262 and intermediate surface 263 is used. This makes it possible to improve the adhesion between the conductive member 20 and the covering member 50.

[0071] As another modification of the upper surface 26 of the conductive member 20, a light-emitting device 500 is illustrated in Figures 17A and 17B. In the light-emitting device 500, the first processing section 81 and the second processing section 82 constituting the processing section 80 are arranged on the first upper surface 261, and the third processing section 83 is arranged on the intermediate surface 263 and the second upper surface 262. In this way, the processing section 80 is arranged continuously across the first upper surface 261, the intermediate surface 263 and the second upper surface 262, which are of different heights, allowing the solder 30 to be arranged continuously across the first upper surface 261, the intermediate surface 263 and the second upper surface 262. In other words, in this cross-section, the covering member 50 is not in contact with the intermediate surface 263 of the upper surface of the conductive member 20, but is arranged to be in contact with the second lower surface 262. As a result, when the covering member 50 undergoes thermal expansion, an expansion force is more likely to act on the covering member 50 between the light-emitting element 10 and the second upper surface 262 of the conductive member 20 in a more oblique direction. Therefore, the upward and downward expansion force in the covering member 50 can be made less likely to act on the light-emitting element 10 or the light-transmitting member 40. This reduces bonding defects due to cracks inside the solder 30, or bonding defects of the light-emitting element 10 due to delamination at the interface between the electrode 12 and the conductive member 20.

[0072] The height difference between the first upper surface 261 and the second upper surface 262 can be, for example, 5 μm to 100 μm when the thickness of the conductive member 20 is 150 μm or more and 200 μm or less.

[0073] The light-emitting device 600 shown in Figure 18 is the same as the light-emitting device 200 shown in Figure 8 in that it is equipped with a protective element 70, but differs in that the upper surface 26 of the conductive member 20 is equipped with a first upper surface 261 and a second upper surface 262. In the light-emitting device 600, all of the processing parts 80, namely the first processing part 81, the second processing part 82, and the third processing part 83, are arranged on the first upper surface 261. In a top view, the second upper surface 262 is located outside of these processing parts 80. Furthermore, the first upper surface 261 is located outside of the second upper surface 262. In other words, the second upper surface 262 is located between the first upper surface 261, which is located at a distance. The protective element 70 is also arranged on the second upper surface 262. With this structure, the vertical expansion force of the covering member 50 is less likely to act on the protective element 70. Furthermore, it is possible to reduce bonding defects of the protective element 70 due to bonding defects caused by cracks inside the solder 30.

[0074] [Manufacturing Method for Light-Emitting Devices] Next, the manufacturing method for light-emitting devices will be explained with reference to Figures 11A to 15B. Here, an example of manufacturing the light-emitting device shown in Figure 7 will be described.

[0075] First, as shown in Figures 11A and 11B, a conductive member intermediate 20A is prepared, which includes a portion that will become a pair of conductive members 20 on which the light-emitting element 10 can be mounted. The conductive member intermediate 20A has a flat upper surface on the portion that will become the pair of conductive members 20. In a top view, the conductive member intermediate 20A has a first region 23 in the area where the light-emitting element 10 is to be mounted, which is the opposite side of the portion that will become the pair of conductive members and its vicinity, and a second region 24 which is a position that overlaps with or is along the contour of the light-emitting element to be placed in the area where the element is to be mounted. The conductive member 20 is composed of a base material mainly composed of copper and a plating placed on the surface of the base material.

[0076] Next, as shown in Figure 12A, a laser beam LB is irradiated onto the upper surface of the portion that will become the pair of conductive members 20 to form a processed portion 80 as shown in Figure 12B, thereby creating a conductive member. Here, the plated surface is melted by irradiation with laser light to form irregularities. This processing step includes the step of irradiating the portion in the first region 23 where the portion that will become the pair of conductive members 20 faces each other to form a first processed portion 81, and the step of irradiating a portion of the second region 24 with laser light to form a second processed portion 82.

[0077] Furthermore, as shown in Figures 13A and 13B, multiple solder 30s are placed in the area where the light-emitting element is to be mounted.

[0078] Furthermore, as shown in Figures 13A and 13B, multiple solder 30s may be placed in positions that overlap with one electrode, or, as shown in Figures 19A and 19B, one solder 30 of approximately the same size as the electrode 12 may be placed in each of the areas where the light-emitting element is planned to be mounted, which overlap with the light-emitting element 10 in a top view.

[0079] Next, the light-emitting element 10 is placed on the solder 30.

[0080] Solder 30 contains solder particles and flux. The flux mainly consists of resin, and also contains an activator and a solvent such as an alcohol-based solvent. Before the solder particles melt, the flux is fluid. Therefore, after the light-emitting element 10 is placed on the solder 30 in a later step, the flux contained in the solder 30 can function as a temporary fixing material to fix the light-emitting element 10 before the solder particles melt.

[0081] In addition, a material containing volatile components can be used as a temporary fixing material 31, separate from the flux contained in the solder 30. For example, after removing at least a portion of the flux contained in the solder 30 before placing the light-emitting element 10, a material containing volatile components can be placed on top of it, and this material can be used as the temporary fixing material 31.

[0082] One method for melting the solder 30 is to place the conductive member 20 on which the solder 30 is placed inside a chamber and heat it while supplying a reducing gas containing formic acid into the chamber (formic acid reflow process). If the heating process is performed before placing the light-emitting element 10, the solder 30 can be made to a slightly wet and spread state, as shown in Figures 20A and 20B. Multiple solders 30 as shown in Figures 13A and 13B will also become wet and spread at this point, so that multiple solders 30 become one solder 30.

[0083] As shown in Figures 21A and 21B, a material containing volatile components is placed on top of the slightly wet and spread solder 30 as a temporary fixing material 31. This allows the light-emitting element 10 to be fixed on top of the solder 30.

[0084] Next, the solder 30 is heated and melted, then cooled to connect the light-emitting element 10 to the pair of conductive members 20. When the solder 30 is melted, as shown in Figures 14A and 14B, a portion of the solder 30 spreads from the flat surface of the second region 24 to the flat surface of the third region 25, and the amount of solder between the light-emitting element 10 and the conductive members 20 becomes constant. As a result, the alignment of the light-emitting element 10 is improved.

[0085] Thus, the step of heating and melting the light-emitting element 10 after placing it on the solder 30 can be carried out in the same manner as the formic acid reflow described above. If the light-emitting element 10 is fixed using the flux contained in the solder 30 as a temporary fixing material, the solder 30 can be spread to the state shown in Figures 14A and 14B in a single heating step. If the light-emitting element 10 is fixed using a material containing volatile components as a temporary fixing material 31 after heating the solder 30 once, the solder 30, which is in a slightly wet and spread state after the first heating, can be further spread to the state shown in Figures 14A and 14B, as shown in Figures 20A and 20B.

[0086] Furthermore, as necessary, a light-transmitting member 40 is placed on the upper surface of the light-emitting element 10, as shown in Figures 15A and 15B.

[0087] Finally, the covering member 50 is placed on the upper surface of the conductive member 20 and around the light-emitting element 10. The covering member 50 is suitably formed using resin molding, such as transfer molding.

[0088] Furthermore, if multiple conductive members are connected, the suspending conductive members are cut to separate the light-emitting device into individual pieces.

[0089] In this way, it becomes possible to obtain a light-emitting device. In particular, when soldering the light-emitting element 10 onto the conductive member, the processing unit 80 can restrict the outflow of molten solder in an unintended direction.

[0090] Furthermore, the conductive member intermediate 20A may have a third region 25 outside the second region 24. The processing step may also include a step of irradiating the third region 25 with laser light to form a third processing portion 83 that is continuous with the second processing portion 82.

[0091] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0092] This disclosure may also be implemented in the following manner:

[0093] [Item 1] A light-emitting device comprising: a pair of conductive members arranged spaced apart from each other; solder arranged on the upper surfaces of the pair of conductive members; a semiconductor laminate; and a pair of electrodes arranged on the lower surface of the semiconductor laminate, wherein the upper surfaces of the pair of conductive members and the pair of electrodes are joined via the solder, the upper surfaces of the pair of conductive members having a flat surface and a processed portion having irregularities, the processed portion comprising: a first processed portion arranged in a first region facing the pair of conductive members in a region overlapping with the light-emitting device in a top view; and a second processed portion arranged in a part of a second region that is at a position overlapping with the contour of the light-emitting device or at a position along the contour. With the above configuration, the thickness of the solder located below the light-emitting device can be controlled, and variations in the inclination (zθ) can be reduced. In addition, the first processed portion makes it difficult for a short circuit to occur between the pair of electrodes. Furthermore, the light-emitting device is less prone to misalignment, improving self-alignment and allowing the intended light distribution characteristics to be obtained. [Item 2] The light-emitting device according to Item 1, wherein the first processed portion and the second processed portion are arranged in a continuous manner. [Item 3] The light-emitting device according to item 1 or 2, wherein the upper surface has a third region located outside the second region, and further has a third processing portion that is continuous with the first processing portion or the second processing portion and extends into the third region. With the above configuration, when soldering a light-emitting element onto a conductive member, the excess molten solder can be guided to the outside of the light-emitting element by the third processing portion extended into the third region, thereby adjusting the amount of solder required for soldering. In addition, by extending a portion of the solder around the light-emitting element, heat dissipation from the solder exposed from the light-emitting element to the outside is promoted, improving the heat dissipation performance of the light-emitting device. [Item 4] The light-emitting device according to any one of items 1 to 3, wherein a portion of the solder is located in the second processing portion. With the above configuration, the second processing portion has a larger contact area with the solder compared to a flat surface, thus improving the adhesion between the solder and the conductive member. [Item 5] The light-emitting device according to item 3, wherein a portion of the solder is located in the third region.With the above configuration, by extending a portion of the solder around the light-emitting element, heat dissipation from the solder exposed from the light-emitting element to the outside is promoted, and the heat dissipation performance of the light-emitting device can be improved. [Item 6] The light-emitting device according to any one of Items 1 to 5, wherein the second region comprises a plurality of second processing parts and a plurality of flat surfaces, and the third processing part is arranged in continuous with one or more of the plurality of second processing parts. With the above configuration, by surrounding the processing part in a closed space, the molten solder can be kept in the closed space and its outflow to unintended areas can be reduced. [Item 7] The light-emitting device according to any one of Items 1 to 6, wherein the width of the first processing part is wider than the width of the second processing part. With the above configuration, the wider first processing part can reduce the situation in which molten solder flows out between a pair of electrodes between conductive members and causes an unintended short circuit. [Item 8] The light-emitting device according to any one of Items 1 to 7, wherein the conductive member is composed of a base material mainly composed of copper and a plating arranged on the surface of the base material. With the above configuration, the outflow of molten solder on a copper conductive member can be controlled by forming a processed area. [Item 9] The light-emitting device according to Item 3, wherein the processed area is a laser irradiation mark. With the above configuration, a processed area can be formed on a conductive member by laser irradiation. [Item 10] The light-emitting device according to Item 9, wherein the plating is a laminated structure in which nickel, palladium, and gold are stacked in that order, and the nickel is partially exposed in the first processed area, the second processed area, and the third processed area. With the above configuration, the outflow of molten solder can be reduced by exposing the nickel layer in the processed area by laser irradiation. [Item 11] The light-emitting device according to any one of Items 1 to 10, further comprising a protective element arranged alongside the light-emitting element so as to straddle the pair of conductive members. With the above configuration, the light-emitting element can be protected by the protective element. [Item 12] The light-emitting device according to any one of Items 1 to 11, further comprising a covering member arranged on at least a part of the upper surface of the pair of conductive members and on the side of the light-emitting element. [Item 13] The light-emitting device according to item 12, wherein the covering member covers the side surface of the light-emitting element.[Item 14] A method for manufacturing a light-emitting device, comprising: a preparation step of preparing a conductive member intermediate including a portion that will become a pair of conductive members on which a light-emitting element can be mounted, wherein the upper surface of the portion that will become a pair of conductive members is a flat surface, and the intermediate having a first region that faces the pair of conductive members and a second region that is located at a position that overlaps with the contour of the light-emitting element or at a position along the contour; a processing step of irradiating the upper surface of the portion that will become a pair of conductive members with laser light to form a processed portion to form a conductive member; a soldering step of placing solder in the second region; a light-emitting element placement step of placing the light-emitting element on the solder; and a connection step of heating and melting the solder, then cooling it to connect the light-emitting element to the pair of conductive members, wherein the processing step includes a step of irradiating the portion of the first region that will become a pair of conductive members faces the first processed portion with laser light and a step of irradiating a part of the second region with laser light to form a second processed portion. This makes it possible to restrict the outflow of molten solder in an unintended direction when soldering a light-emitting element onto a conductive member by the processing section. [Clause 15] The method for manufacturing a light-emitting device according to Claim 14, wherein the conductive member intermediate has a third region outside the second region, and the processing step includes a step of irradiating the third region with laser light to form a third processing section continuous with the second processing section.

[0094] The light-emitting device and its manufacturing method described herein can be suitably used in backlights or light-emitting devices for liquid crystal displays, surface light-emitting devices, automotive light sources, etc., using semiconductor light-emitting elements such as LEDs or LDs. For example, they can be suitably used in screens such as displays, smartphones, tablets, automotive monitors, or HMDs or smart glasses.

[0095] 100, 200, 300, 400, 500, 600... Light-emitting device 10, 10C... Light-emitting element 11, 11C... Semiconductor laminate 12, 12C... Electrode 20, 20C... Conductive member (20A... Conductive member intermediate) 21, 21C... First conductive member; 22, 22C... Second conductive member 23... First region; 24... Second region; 25... Third region 26... Top surface; 261... First top surface; 262... Second top surface; 263... Intermediate surface 30... Solder 31... Temporary fixing material 40, 40C... Light-transmitting member 50, 50C... Covering member 52... Resin package 60... Joining member 70... Protective element 80... Processing section 81... First processing section 82... Second processing section 83... Third processing section 84... Fourth processing section 85... Sub-processing section 86... Flat surface LB... Laser light

Claims

1. A light-emitting device comprising: a pair of conductive members arranged spaced apart from each other; solder arranged on the upper surfaces of the pair of conductive members; a semiconductor laminate; and a pair of electrodes arranged on the lower surface of the semiconductor laminate, wherein the upper surfaces of the pair of conductive members and the pair of electrodes are joined via the solder, and the upper surfaces of the pair of conductive members have a flat surface and a processed portion having irregularities, and the processed portion has a first processed portion arranged in a first region facing the pair of conductive members in a region overlapping with the light-emitting device in a top view, and a second processed portion arranged in a part of a second region that is at a position overlapping with the contour of the light-emitting device or at a position along the contour.

2. The light-emitting device according to claim 1, wherein the first processing section and the second processing section are arranged in a continuous manner.

3. The light-emitting device according to claim 1, wherein the upper surface has a third region located outside the second region, and further has a third processing portion that is continuous with the first processing portion or the second processing portion and extends into the third region.

4. The light-emitting device according to claim 1, wherein a portion of the solder is arranged in the second processing section.

5. The light-emitting device according to claim 3, wherein a portion of the solder is arranged in the third region.

6. The light-emitting device according to claim 3, wherein the second region comprises a plurality of second processing sections and a plurality of flat surfaces, and the third processing section is arranged in continuous with one or more of the plurality of second processing sections.

7. The light-emitting device according to any one of claims 1 to 6, wherein the width of the first processing section is wider than the width of the second processing section.

8. The light-emitting device according to any one of claims 1 to 6, wherein the conductive member comprises a base material mainly composed of copper and a plating disposed on the surface of the base material.

9. The light-emitting device according to claim 3, wherein the processed portion is a laser beam irradiation mark.

10. The light-emitting device according to claim 9, wherein the plating has a laminated structure in which nickel, palladium, and gold are stacked in that order, and the nickel is partially exposed in the first processing section, the second processing section, and the third processing section.

11. The light-emitting device according to any one of claims 1 to 6, further comprising a protective element arranged alongside the light-emitting element so as to straddle the pair of conductive members.

12. The light-emitting device according to any one of claims 1 to 6, further comprising a covering member disposed on at least a portion of the upper surface of the pair of conductive members and on the side of the light-emitting element.

13. The light-emitting device according to claim 12, wherein the covering member covers the side surface of the light-emitting element.

14. A method for manufacturing a light-emitting device, comprising: a preparation step of preparing a conductive member intermediate including a pair of conductive member portions on which a light-emitting element can be mounted, wherein the upper surface of the pair of conductive member portions is a flat surface, and in a top view, the intermediate comprises a first region that faces the pair of conductive members and a second region that is located at a position overlapping with the contour of the light-emitting element or along the contour; a processing step of irradiating the upper surface of the pair of conductive member portions with laser light to form a processed portion to form a conductive member; a soldering step of placing solder in the second region; a light-emitting element placement step of placing the light-emitting element on the solder; and a connection step of heating and melting the solder, then cooling it to connect the light-emitting element to the pair of conductive members, wherein the processing step includes: irradiating the portion of the first region on which the pair of conductive member portions face each other with laser light to form a first processed portion; and irradiating a part of the second region with laser light to form a second processed portion.

15. The method for manufacturing a light-emitting device according to claim 14, wherein the conductive member intermediate has a third region outside the second region, and the processing step includes a step of irradiating the third region with laser light to form a third processed portion continuous with the second processed portion.

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