Photosensitive resin composition, dry film photoresist using same, method for preparing same, resist pattern, and device

Abstract

The present invention relates to a photosensitive resin composition, a dry film photoresist using same, a method for preparing same, a resist pattern, and a device. The photosensitive resin composition comprises three or more different types of epoxy resins including a first epoxy resin, a second epoxy resin, and a third epoxy resin, wherein the three or more different types of epoxy resins each independently have a softening point of 60 °C to 105 °C.

Description

Photosensitive resin composition, dry film photoresist using the same, method for manufacturing the same, resist pattern, and apparatus

[0001] The present invention relates to a photosensitive resin composition, a dry film photoresist using the same, a method for manufacturing the same, a resist pattern, and an apparatus.

[0002] Photosensitive resin compositions are photoresists capable of photolithography processes and are utilized across a wide range of devices for forming various electronic components, such as microelectromechanical system (MEMS) components, barriers for power inductors, and electronic circuits; they are primarily used in the form of dry film photoresist (DFR) and liquid photoresist ink.

[0003] In addition, general dry film photoresist is widely used for lamination on copper clad laminates.

[0004] Unlike conventional semiconductor manufacturing, devices in the above fields require a resist capable of fine patterning with a high aspect ratio (the aspect ratio refers to the "height / width of a structure"). Additionally, as the circuit line width decreases, the aspect ratio also increases; therefore, for components requiring ultra-miniaturization or high density, a high aspect ratio must be achieved when forming patterns through etching to improve device performance.

[0005] In addition, patterns are generally formed using a photosensitive resin composition comprising an epoxy resin such as an alkali-developable binder resin or bisphenol A novolac resin, a photopolymerization initiator, and a photopolymerizable compound.

[0006] However, conventional technology has a limit of 8 / 15 μm in the resolution pitch of the line width / line spacing of the resist pattern based on a 120 μm film, so photolithography using conventional photosensitive resin compositions has shown limitations in forming fine patterns of 8 / 15 μm or less.

[0007] Meanwhile, in the exposure process essential for pattern formation using a photosensitive resin composition, the protective film of the dry film photoresist is peeled off and laminated onto both sides (front / back) of the substrate to form a laminate, then the laminate is placed on the surface of the exposure equipment, the support film located at the top of the front side of the laminate is peeled off, and the photosensitive resin layer on the front side of the substrate film is exposed by irradiating with ultraviolet light of a wavelength of 355 nm. Subsequently, the laminate is rotated 180 degrees so that the photosensitive resin layer on the front side of the substrate film is in contact with the surface of the exposure equipment, and the support PET film located at the top of the back side of the laminate is peeled off, and the photosensitive resin layer on the back side of the substrate film is exposed by irradiating with ultraviolet light of a wavelength of 355 nm. At this time, as the photosensitive resin layer comes into contact with the exposure equipment, the sticky, uncured photosensitive resin layer adheres to the exposure equipment, causing contamination of the exposure equipment.

[0008] Therefore, it is necessary to develop a photosensitive resin composition that can achieve high resolution while minimizing contamination caused by stickiness during the exposure process.

[0009] The present invention is intended to provide a photosensitive resin composition capable of achieving high resolution while minimizing contamination caused by stickiness during the exposure process.

[0010] In addition, the present invention is intended to provide a dry film photoresist using the above-described photosensitive resin composition, a method for manufacturing the same, a resist pattern, and an apparatus.

[0011] The present specification provides a photosensitive resin composition comprising three or more different types of epoxy resins, including a first epoxy resin, a second epoxy resin, and a third epoxy resin, wherein each of the three or more different types of epoxy resins has an independent softening point of 60°C to 105°C.

[0012] In addition to the above, a dry film photoresist comprising a photosensitive resin layer containing the photosensitive resin composition is provided.

[0013] The present specification also provides a method for manufacturing a dry film photoresist, comprising the steps of: coating the photosensitive resin composition on a polymer substrate; and drying the coated photosensitive resin composition.

[0014] In addition to the above, a resist pattern is provided, comprising a photosensitive resin pattern containing the photosensitive resin composition.

[0015] The present specification also provides an apparatus comprising the resist pattern, or a metal pattern formed by the resist pattern.

[0016]

[0017] A photosensitive resin composition according to a specific embodiment of the invention, a dry film photoresist using the same, a method for manufacturing the same, a resist pattern, and an apparatus will be described in more detail below.

[0018] Prior to that, unless explicitly stated otherwise in this specification, technical terms are used merely to refer to specific embodiments and are not intended to limit the invention.

[0019] The singular forms used in this specification include plural forms unless the phrases clearly indicate otherwise.

[0020] As used in this specification, the meaning of 'includes' specifies certain characteristics, regions, integers, steps, actions, elements, and / or components, and does not exclude the existence or addition of other specific characteristics, regions, integers, steps, actions, elements, components, and / or groups.

[0021] Also, in this specification, terms including ordinal numbers such as 'first' and 'second' are used for the purpose of distinguishing one component from another and are not limited by said ordinal numbers. For example, within the scope of the present invention, the first component may also be named the second component, and similarly, the second component may be named the first component.

[0022] In this specification, the weight-average molecular weight refers to the weight-average molecular weight equivalent to polystyrene measured by the GPC method. In the process of measuring the weight-average molecular weight equivalent to polystyrene measured by the GPC method, commonly known analytical devices, detectors such as a refractive index detector, and analytical columns may be used, and commonly applied temperature conditions, solvents, and flow rates may be applied.

[0023] As a specific example of the above measurement conditions, an epoxy binder resin was dissolved in tetrahydrofuran to a concentration of 1.0 (w / w)% in THF (approx. 0.5 (w / w)% based on solid content), filtered using a 0.45㎛ pore size syringe filter, and 20㎛ was injected into the GPC. The mobile phase of the GPC was tetrahydrofuran (THF), introduced at a flow rate of 1.0 mL / min, and the column consisted of one Agilent PLgel 5㎛ Guard (7.5 x 50 mm) and two Agilent PLgel 5㎛ Mixed D (7.5 x 300 mm) connected in series. The measurement was performed at 40℃ using an Agilent 1260 Infinity II System RI Detector.

[0024] The weight-average molecular weight (Mw) of the epoxy binder resin was determined using a calibration curve formed by injecting polystyrene standard samples (STD A, B, C, D), in which polystyrene with various molecular weights was dissolved in tetrahydrofuran at a concentration of 0.1 (w / w)% as shown below, into a GPC after filtering through a 0.45㎛ pore size syringe filter.

[0025] STD A (Mp): 791,000 / 27,810 / 945

[0026] STD B (Mp): 282,000 / 10,700 / 580

[0027] STD C (Mp): 126,000 / 4,430 / 370

[0028] ST D (Mp): 51,200 / 1,920 / 162

[0029]

[0030] The present invention will be described in detail below.

[0031]

[0032] According to one embodiment of the invention, a photosensitive resin composition may be provided, comprising three or more different types of epoxy resins including a first epoxy resin, a second epoxy resin, and a third epoxy resin, wherein each of the three or more different types of epoxy resins has an independent softening point of 60°C to 105°C.

[0033] The inventors confirmed through experiments that the photosensitive resin composition of the above embodiment can achieve high resolution while minimizing contamination caused by stickiness during the exposure process, as three or more different types of epoxy resins each have an independent softening point of 60°C to 105°C, and thus completed the invention.

[0034] In addition, the above photosensitive resin composition can be applied to various devices, but is particularly suitable for use in the barrier plating method of power inductors and can be applied as a material required for energy efficiency and precision technology.

[0035]

[0036] Specifically, the photosensitive resin composition of the above embodiment may include an epoxy resin.

[0037] The above epoxy resin may include three or more different types of epoxy resins, including a first epoxy resin, a second epoxy resin, and a third epoxy resin. The above epoxy resin includes at least three types of epoxy resins, and these at least three types of epoxy resins are each different from one another. Thus, three or more different types of epoxy resins may include a first epoxy resin, a second epoxy resin, and a third epoxy resin. The first epoxy resin, the second epoxy resin, and the third epoxy resin have different molecular structures.

[0038] The above three or more different types of epoxy resins may each independently have a softening point of 60°C to 105°C, or 60°C to 102°C, or 60°C to 85°C, or 60°C to 75°C. The softening point refers to the temperature at which deformation proceeds to a certain extent when an object such as a polymer resin is heated, and is measured for the purpose of determining what is the appropriate temperature for molding the polymer resin. Examples of methods for measuring the softening point are not significantly limited, and conventional methods for measuring the softening point of polymer resins may be applied without limitation. However, as an example, the softening point may be measured according to the standard of ASTM E 28-14.

[0039] That is, each of the first epoxy resin, the second epoxy resin, and the third epoxy resin may have a softening point of 60°C to 105°C, or 60°C to 102°C, or 60°C to 85°C, or 60°C to 75°C.

[0040] If the softening point of the three or more different types of epoxy resins mentioned above is excessively reduced independently, a problem may occur in which the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation using the photosensitive resin composition, and the sticky, uncured photosensitive resin layer adheres to the exposure equipment, contaminating the exposure equipment.

[0041] On the other hand, if the softening point of the three or more different types of epoxy resins mentioned above increases excessively independently, the resolution may be reduced when forming a pattern using a photosensitive resin composition, making it difficult to implement fine patterns.

[0042] More specifically, the first epoxy resin may have a softening point of 60°C to 85°C, or 60°C to 70°C, or 75°C to 85°C. On the other hand, if the softening point of the first epoxy resin is reduced to less than 60°C, a problem may occur in which the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation using the photosensitive resin composition, and the sticky, uncured photosensitive resin layer adheres to the exposure equipment, contaminating the exposure equipment. In addition, if the softening point of the first epoxy resin is excessively increased, the resolution may be reduced during pattern formation using the photosensitive resin composition, making it difficult to implement fine patterns.

[0043] In addition, the first epoxy resin may have an epoxy equivalent of 190 g / eq to 235 g / eq.

[0044] In addition, the first epoxy resin may have a weight-average molecular weight of 1,500 to 5,000 g / mol. As such, the first epoxy resin has the advantage of having a very small weight-average molecular weight due to steric hindrance caused by an aromatic ring, which results in minimal linewidth expansion (halation).

[0045] Additionally, based on 100% by weight of the above-mentioned three or more different types of epoxy resins, the first epoxy resin may be contained in an amount of 55% to 85% by weight, or 65% to 80% by weight, or 65% to 75% by weight. If the content of the first epoxy resin is too low, the peeling time for the cured epoxy resin may increase, thereby reducing process efficiency. If the content of the first epoxy resin is too high, the sensitivity may be too fast, leading to a decrease in uniformity on the same panel (substrate) and a resulting drop in yield.

[0046] The first epoxy resin may be a bisphenol A novolak-type epoxy resin. The first epoxy resin has excellent chemical resistance, heat resistance, and rigidity due to the aromatic ring, and can increase curing reactivity while maintaining the curing framework. Specific examples of the bisphenol A novolak-type epoxy resin are not significantly limited, but as an example, an epoxy resin having the structure of the following chemical formula A may be cited.

[0047] [Chemical Formula A]

[0048]

[0049] In the above chemical formula A, n is an integer greater than or equal to 1.

[0050] More specifically, examples of the above-mentioned bisphenol A novolak type epoxy resin include KEB-3165M80 or KEB-3180M80.

[0051] Meanwhile, the softening point of the second epoxy resin may be 60°C to 102°C, or 60°C to 70°C, or 91°C to 102°C. On the other hand, if the softening point of the second epoxy resin is reduced to less than 60°C, a problem may occur in which the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation using the photosensitive resin composition, and the sticky, uncured photosensitive resin layer adheres to the exposure equipment, contaminating the exposure equipment. In addition, if the softening point of the second epoxy resin is increased to more than 102°C, the resolution may be reduced during pattern formation using the photosensitive resin composition, making it difficult to implement fine patterns.

[0052] In addition, the second epoxy resin may have an epoxy equivalent of 450 g / eq to 1000 g / eq, or 450 g / eq to 500 g / eq, or 900 g / eq to 1000 g / eq.

[0053] In addition, the second epoxy resin may have a weight-average molecular weight of 1,500 to 5,000 g / mol. As such, the second epoxy resin has the advantage of having a very small weight-average molecular weight due to steric hindrance caused by an aromatic ring, which results in minimal linewidth expansion (halation).

[0054] In addition, based on 100% by weight of the above three or more different types of epoxy resins, the second epoxy resin may be contained in an amount of 10% to 30% by weight, or 15% to 25% by weight, or 17% to 23% by weight. If the content of the second epoxy resin is too low, the peeling time for the cured epoxy resin may increase, thereby reducing process efficiency. If the content of the second epoxy resin is too high, the realization of fine circuit patterns may be degraded due to line width expansion caused by overpolymerization of the photosensitive resin composition.

[0055] The second epoxy resin may be a bisphenol A type epoxy resin. The second epoxy resin has excellent chemical resistance, heat resistance, and rigidity due to the aromatic ring, and may have excellent flexibility and adhesion. Specific examples of the bisphenol A type epoxy resin are not significantly limited, but as an example, an epoxy resin having the structure of the following chemical formula B may be cited.

[0056] [Chemical Formula B]

[0057]

[0058] In the above chemical formula B, n is an integer greater than or equal to 1.

[0059] More specifically, examples of the above-mentioned bisphenol A type epoxy resin include KER-3001 (YD-011) or KER-3004 (YD-014).

[0060] Meanwhile, the above third epoxy resin may have a softening point of 65°C to 75°C.

[0061] In addition, the third epoxy resin may have an epoxy equivalent of 160 g / eq to 180 g / eq.

[0062] In addition, based on 100% by weight of the above three or more different types of epoxy resins, the third epoxy resin may be contained in an amount of 1% to 20% by weight, or 5% to 15% by weight, or 8% to 12% by weight. If the content of the third epoxy resin is too low, the degree of polymerization becomes insufficient, and circuit loss problems may occur due to reduced solvent resistance and chemical resistance. If the content of the third epoxy resin is too high, the realization of fine circuit patterns may be reduced due to line width expansion caused by overpolymerization of the photosensitive resin composition.

[0063] The above third epoxy resin may be a polyfunctional novolak epoxy resin.

[0064] The above photosensitive resin composition includes the polyfunctional novolak epoxy as the third epoxy resin, thereby improving rigidity, chemical resistance, and coefficient of thermal expansion to maintain a high aspect ratio, which makes it easier to form fine patterns than conventional ones.

[0065] The above-mentioned polyfunctional novolak epoxy resin may have three or more functional groups and a weight-average molecular weight of 800 to 1,500 g / mol. The above-mentioned polyfunctional novolak epoxy resin may have three or more, four or more, or five or more functional groups. Accordingly, the coating properties of the dry film photoresist, the mechanical strength of the resist itself after circuit formation, chemical resistance, and coefficient of thermal expansion may be improved.

[0066] Specific examples of the above-mentioned polyfunctional novolak epoxy resin are not limited, but as an example, KES-7270 having the structure of the following chemical formula C can be cited.

[0067] [Chemical Formula C]

[0068]

[0069] In the above chemical formula C, R is hydrogen or methyl, and n is an integer greater than or equal to 1.

[0070] Meanwhile, the photosensitive resin composition may further include a cationic initiator containing a sulfonium complex salt. The cationic initiator refers to a photocationic polymerization initiator that generates cationic species upon irradiation such as UV and active energy rays, and plays an important role in the curing of dry film photoresist. Accordingly, the photocationic initiator has the characteristic of enabling the formation of fine patterns (i.e., fine pitch) in thick films by using a material that includes the function of a photo-generating agent with low reactivity while having sufficient performance to cure epoxy resin.

[0071] According to one embodiment of the invention, the cation initiator containing the sulfonium complex salt is thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium) bis tetrakis(pentafluorophenyl) borate (PAG-TR-21608), thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium) hexafluorophosphate, triarylsulfonium bis tetrakis(pentafluorophenyl) borate, triarylsulfonium hexafluorophosphate, 4-{[4-(diphenylsulfonium)phenyl]sulfanyl}phenyl)diphenylsulfonium) hexafluorophosphate (4-{[4-(diphenyl sulfonium)phenyl]sulfanyl}phenyl)diphenylsulfonium) It may be one or more selected from the group consisting of hexafluorophosphate (TR-PAG-202S). Preferably, it may be thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium)bistetrakis(pentafluorophenyl)borate.

[0072] The above specific type of cation initiator enables the maintenance of a high aspect ratio of 1:20 or higher even in thick films with a film thickness of 120㎛ without the Halation phenomenon due to low reactivity.

[0073] Specifically, the photosensitive resin composition of the above embodiment may contain a cationic initiator containing the sulfonium complex salt in an amount of 0.1 parts by weight or more and 5.0 parts by weight or less per 100 parts by weight of the epoxy resin.

[0074] Specifically, the photosensitive resin composition of the above embodiment may include the cation initiator containing the sulfonium complex salt in an amount of 0.1 parts by weight or more, 0.5 parts by weight or more, 5.0 parts by weight or less, 4.0 parts by weight or less, 3.0 parts by weight or less, or 0.1 parts by weight or more and 5.0 parts by weight or less, 0.1 parts by weight or more and 4.0 parts by weight or less, 0.1 parts by weight or more and 3.0 parts by weight or less, or 0.5 parts by weight or more and 5.0 parts by weight or less, 0.5 parts by weight or more and 4.0 parts by weight or less, or 0.5 parts by weight or more and 3.0 parts by weight or less, based on 100 parts by weight of the epoxy resin.

[0075] If the content of the cationic initiator containing the above sulfonium complex salt is less than 0.1 parts by weight, the degree of polymerization becomes insufficient, and circuit loss problems occur due to reduced solvent resistance and chemical resistance, and if the content exceeds 5.0 parts by weight, the realization of fine circuit patterns may be reduced due to line width expansion caused by overpolymerization of the photosensitive resin composition.

[0076] Meanwhile, the photosensitive resin composition may further include additives. For example, the additives may include various additives such as UV absorbers, leveling agents, curing accelerators, fillers, reaction retardants, anti-aging agents, antioxidants, pigments (dyes), plasticizers, flame retardants, surfactants, dispersants, dehydrating agents, adhesion promoters, and antistatic agents.

[0077] The above UV absorber may be, for example, TINUVIN (registered trademark) 384-2.

[0078] In addition, the above additive may include a leveling agent, and the leveling agent may be a polyether modified polysiloxane.

[0079] Meanwhile, the photosensitive resin composition may further include a solvent. The amount of the solvent added is not particularly limited, but for example, it may be included in an amount of 1.0 to 30.0 parts by weight per 100 parts by weight of the epoxy resin.

[0080] The above solvent is not limited in type as long as it can dissolve each component and is chemically stable, and examples include alcohol, ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, propylene glycol alkyl ether propionate, aromatic hydrocarbons, ketones, esters, etc.

[0081] Specifically, the solvent may be one or more selected from the group consisting of butanol, dimethylformamide, N-methyl-2-pyrrolidone, gamma-butyrolactone, butylcapitol, butylcellosolve, methylcellosolve, butyl acetate, diethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, propylene glycol methyl ether propionate, dipropylene glycol dimethyl ether, cyclohexanone, methyl ethyl ketone (MEK), and propylene glycol monomethyl ether acetate (PGMEA).

[0082] Meanwhile, the photosensitive resin film containing the dried material of the above-mentioned photosensitive resin composition may have a kinematic viscosity measured by a rheometer in the 65°C range of 330 Pa·s to 420 Pa·s, or 340 Pa·s to 420 Pa·s, or 330 Pa·s to 415 Pa·s, or 340 Pa·s to 415 Pa·s, or 360 Pa·s to 420 Pa·s, or 395 Pa·s to 420 Pa·s, or 410 Pa·s to 420 Pa·s. The above-mentioned dried material refers to a material obtained through a drying process of the photosensitive resin composition of the above-mentioned embodiment.

[0083] If the kinematic viscosity measured by the above rheometer decreases excessively in the 65°C range, a problem may occur in which the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation using the photosensitive resin composition, and the sticky, uncured photosensitive resin layer adheres to the exposure equipment, contaminating the exposure equipment.

[0084] On the other hand, if the kinematic viscosity measured by the above rheometer increases excessively in the 65°C range, the resolution is reduced when forming a pattern using a photosensitive resin composition, making it difficult to implement fine patterns.

[0085] Meanwhile, the residual solvent content of the photosensitive resin film containing the dried product of the above photosensitive resin composition may be 2000 ppm or less, or 100 ppm or less, or 80 ppm or less, or 70 ppm or less, or 60 ppm or less, or 40 ppm or less, or 0.1 ppm to 2000 ppm, or 0.1 ppm to 100 ppm, or 0.1 ppm to 80 ppm, or 0.1 ppm to 70 ppm, or 0.1 ppm to 60 ppm, or 0.1 ppm to 40 ppm.

[0086] If the above residual solvent content increases excessively, a problem may occur in which the sticky, uncured photosensitive resin layer adheres to the exposure equipment and contaminates the exposure equipment during the exposure process, which is essential for pattern formation, due to the decrease in the kinematic viscosity of the photosensitive resin film caused by the photosensitive resin layer coming into contact with the exposure equipment.

[0087] In addition, if the above residual solvent content is excessively reduced, problems may arise such as thermal shrinkage damage to the PET substrate film due to increased drying temperature or reduced process efficiency due to increased drying time.

[0088]

[0089] According to another embodiment of the invention, a dry film photoresist comprising a photosensitive resin layer containing the photosensitive resin composition of the first embodiment may be provided. The details regarding the photosensitive resin composition include all the details described above in the first embodiment.

[0090] Specifically, the photosensitive resin layer may include a dried or cured product of the photosensitive resin composition of the above embodiment. The dried product refers to a material obtained through a drying process of the photosensitive resin composition of the above embodiment. The cured product refers to a material obtained through a curing process of the photosensitive resin composition of the above embodiment. Although the thickness of the photosensitive resin layer is not significantly limited, it can be freely adjusted, for example, within a range of 0.01 μm to 1 mm.

[0091] The thickness of the dry film photoresist is not significantly limited, but can be freely adjusted within, for example, a range of 0.01 μm to 1 mm. When the thickness of the dry film photoresist increases or decreases by a specific amount, the physical properties measured in the dry film photoresist can also change by a certain amount.

[0092] The above dry film photoresist may further include a substrate film and a protective film. The substrate film serves as a support for the photosensitive resin layer during the manufacture of the dry film photoresist, thereby facilitating easy handling during the exposure of the photosensitive resin layer having adhesive properties.

[0093] The above-mentioned substrate film may be any type of plastic film, and may include one or more plastic films selected from the group consisting of, for example, acrylic film, polyethylene terephthalate (PET) film, triacetylcellulose (TAC) film, polynorbornene (PNB) film, cycloolefin polymer (COP) film, and polycarbonate (PC) film. The thickness of the above-mentioned substrate film is not significantly limited, but can be freely adjusted within, for example, a range of 0.01 μm to 1 mm.

[0094] The above protective film serves as a protective cover that prevents damage to the resist during handling and protects the photosensitive resin layer from foreign substances such as dust, and is laminated on the back side where the substrate film of the photosensitive resin layer is not formed. As the protective film serves to protect the photosensitive resin layer from the outside, it requires appropriate release properties and adhesiveness so that it can be easily detached when applying the dry film photoresist to subsequent processes, while preventing release during storage and distribution.

[0095] The above protective film may be any type of plastic film, and may include one or more plastic films selected from the group consisting of, for example, acrylic film, polyethylene (PE) film, polyethylene terephthalate (PET) film, triacetylcellulose (TAC) film, polynorbornene (PNB) film, cycloolefin polymer (COP) film, and polycarbonate (PC) film. The thickness of the above protective film is not significantly limited, but can be freely adjusted within, for example, a range of 0.01 μm to 1 mm.

[0096] Examples of methods for manufacturing the above dry film photoresist are not significantly limited. For example, a photosensitive resin composition of the above embodiment can be coated onto a conventional substrate film, such as polyethylene terephthalate, using a conventional coating method, dried, and then a dry film can be manufactured by laminating a conventional protective film, such as polyethylene, onto the surface of the dried photosensitive resin layer.

[0097] The method of coating the photosensitive resin composition of the above embodiment is not particularly limited, and, for example, a method such as a coating bar may be used.

[0098] Meanwhile, the photosensitive resin layer may have a kinematic viscosity measured by a rheometer of 330 Pa·s to 420 Pa·s in the 65 ℃ range, or 340 Pa·s to 420 Pa·s, or 330 Pa·s to 415 Pa·s, or 340 Pa·s to 415 Pa·s, or 360 Pa·s to 420 Pa·s, or 395 Pa·s to 420 Pa·s, or 410 Pa·s to 420 Pa·s.

[0099] If the kinematic viscosity of the above photosensitive resin layer, as measured by a rheometer, decreases excessively in the 65°C range, a problem may occur in which the sticky, uncured photosensitive resin layer adheres to the exposure equipment and contaminates the exposure equipment during the exposure process, which is essential for pattern formation.

[0100] On the other hand, if the kinematic viscosity of the photosensitive resin layer measured by a rheometer increases excessively in the 65°C range, the resolution may be reduced when forming a pattern using a dry film photoresist, making it difficult to implement fine patterns.

[0101] Meanwhile, the photosensitive resin layer may have a residual solvent content of 2000 ppm or less, or 100 ppm or less, or 80 ppm or less, or 70 ppm or less, or 60 ppm or less, or 40 ppm or less, 0.1 ppm to 2000 ppm, or 0.1 ppm to 100 ppm, or 0.1 ppm to 80 ppm, or 0.1 ppm to 70 ppm, or 0.1 ppm to 60 ppm, or 0.1 ppm to 40 ppm.

[0102] If the above residual solvent content increases excessively, a problem may occur in which the photosensitive resin layer comes into contact with the exposure equipment during the exposure process essential for pattern formation due to the decrease in kinematic viscosity of the dry film photoresist, causing the sticky, uncured photosensitive resin layer to stick to the exposure equipment and contaminate the exposure equipment.

[0103] In addition, if the above residual solvent content is excessively reduced, problems may arise such as thermal shrinkage damage to the PET substrate film due to increased drying temperature or reduced process efficiency due to increased drying time.

[0104]

[0105] In addition, according to another embodiment of the present invention, a method for manufacturing a dry film photoresist may be provided, comprising the steps of: coating the photosensitive resin composition on a polymer substrate; and drying the coated photosensitive resin composition.

[0106] The above polymer substrate refers to the substrate film described above. Accordingly, the content regarding the above polymer substrate includes all the details described above in the above embodiment.

[0107] The method of coating the above photosensitive resin composition onto a polymer substrate can be carried out according to methods well known in the art. For example, comma coating, slot die, lip die, spin coating, etc. may be used, but are not limited thereto.

[0108] In addition, after the step of coating the photosensitive resin composition on a polymer substrate, the method may include a step of drying the coated photosensitive resin composition.

[0109] The step of drying the above-mentioned coated photosensitive resin composition can be carried out by a heating means such as a hot air oven, a hot plate, a hot air circulation furnace, or an infrared furnace, and can be performed at a temperature of 125°C to 135°C.

[0110] However, the above drying is preferably performed for 35 to 50 minutes at the above temperature range. That is, the photosensitive resin layer is a dried or cured product dried for 35 to 50 minutes at a temperature of 125 ℃ to 135 ℃, and this may be a single layer of photosensitive resin.

[0111] If the above drying is carried out at a temperature exceeding 135°C, thermal shrinkage damage may occur to the PET substrate film. If the above drying is carried out at a temperature below 125°C, the residual solvent content in the dry film photoresist increases, and due to the decrease in kinematic viscosity, the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation. This can cause the sticky, uncured photosensitive resin layer to stick to the exposure equipment and contaminate the exposure equipment.

[0112] In addition, if the above drying is carried out for less than 35 minutes, the residual solvent content in the dry film photoresist increases, and due to the decrease in kinematic viscosity, the photosensitive resin layer comes into contact with the exposure equipment during the exposure process, which is essential for pattern formation, and the sticky, uncured photosensitive resin layer may stick to the exposure equipment and contaminate the exposure equipment.

[0113] In addition, if the above drying is carried out for more than 50 minutes, a problem may arise in which process efficiency decreases as the drying time increases excessively.

[0114]

[0115] According to another embodiment of the invention, a resist pattern may be provided comprising a pattern of a photosensitive resin layer containing a cured product of the photosensitive resin composition of the first embodiment. The details regarding the photosensitive resin composition include all the details described above in the first embodiment.

[0116] The pattern of the above photosensitive resin layer may be a photosensitive composition in the form of a pattern having an opening.

[0117] An example of a method for forming the above photosensitive resin pattern is a method in which a photosensitive resin composition of the dry film photoresist of the other embodiment is coated onto a substrate, a photosensitive resin layer is laminated onto the substrate by drying in the manner described above, and then exposure, baking, and development are performed.

[0118] The thickness of the photosensitive resin single layer may be 100 μm or more, or 120 μm or more, or 1000 μm or less, or 85 μm to 1000 μm, or 100 μm to 1000 μm, or 120 μm to 1000 μm. Through the method described above, a fine pitch of the photosensitive resin single layer can be formed after exposure, baking after exposure, and development, thereby enabling the production of a high-resolution microcircuit pattern.

[0119] As a substrate, copper foil laminates, PCB substrates, glass substrates on which transparent electrodes such as ITO and IZO are sputtered or deposited, film substrates such as the same, glass substrates coated with dielectric paste, silicon wafers, glass wafers on which amorphous silicon is deposited, silicon wafers on which metal thin films such as copper, tantalum, and molybdenum are sputtered, etc., can be used.

[0120] The above exposure process can be carried out using light sources well known in this field, such as UV, visible light, and lasers. Among these, it is preferable to use a laser direct exposure machine that includes light with a wavelength of 350 to 410 nm, particularly an i-line (365 nm) light source. When using a laser direct exposure machine, the process can be performed under conditions where the exposure energy is 300 to 700 mJ / ㎠ or less, whereas when using a general lamp exposure machine, the process can be performed under conditions where the exposure energy is 200 mJ / ㎠ or less, making it useful for manufacturing images of PCBs, lead frames, PDPs, and other display devices.

[0121] In addition, to increase the efficiency of the above-mentioned cation initiator, a post-exposure baking process may be performed. For the post-exposure baking process, a hot air oven or a hot plate may be used. As a preferred example, when using a hot air oven, the baking process may be performed at 70 to 90°C for 10 to 60 minutes.

[0122] The development process can be carried out by the dipping method, shower method, spray method, brush method, etc., and as the developer, an organic developer containing an organic solvent such as PGMEA is used instead of an alkaline developer, unlike the developer of a general photoresist. As such an organic developer, organic solvents such as methyl-2-hydroxyisobutyrate, ethylene glycol methyl ether acetate, 2-methoxy-1-methyl ethyl ester, propylene acetate, dibutyl ether, ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, propylene glycol monomethyl ether acetate (PGMEA), and propylene glycol dimethyl ether can be used, and these can be used alone or in a mixture of two or more. According to a preferred embodiment, the developer may be PGMEA.

[0123] Accordingly, the photosensitive resin layer may be developed with one or more organic solvents selected from the group consisting of methyl-2-hydroxyisobutyrate, ethylene glycol methyl ether acetate, 2-methoxy-1-methyl ethyl ester, propylene acetate, dibutyl ether, ethylene glycol monomethyl ether, ethylene glycol dimethyl ether, and propylene glycol dimethyl ether.

[0124] In the case where the dry film photoresist of the above other embodiment has a protective film on the photosensitive resin layer, a process of removing the protective film may be further performed prior to the lamination process of the photosensitive resin layer on the substrate.

[0125] In addition, if the dry film photoresist of the above other embodiment has a polymer substrate or substrate film laminated on one surface of a photosensitive resin layer, a process of removing the polymer substrate or substrate film immediately after the exposure process may be further performed.

[0126]

[0127] According to another embodiment of the invention, a device comprising the resist pattern or a metal pattern formed by the resist pattern may be provided.

[0128] The details regarding the above-mentioned resist pattern include all the details described above in the other embodiments.

[0129] The specific details regarding the above device are not particularly limited, and various conventionally known technical configurations can be applied without restriction. For example, the above device may be an electronic device, a semiconductor device, or a display device.

[0130] The metal pattern described above can be formed by the resist pattern described above. Specifically, the metal pattern can be formed by performing etching or plating through the openings included in the resist pattern. That is, the metal pattern may include the lower metal remaining after etching the lower metal of the resist pattern through the openings included in the resist pattern, or the metal plated in the openings included in the resist pattern.

[0131] Specifically, for example, by etching or plating the lower substrate exposed by the above-described resist pattern, a barrier of a power inductor, a microelectromechanical system (MEMS) component, an electronic circuit, a conductor pattern, a printed circuit board, a lead frame, an ITO electrode, a black matrix, a semiconductor bump, etc., can be manufactured. If necessary, after the etching or plating, the resist pattern may be peeled off and removed from the substrate using an aqueous solution having a stronger alkalinity than the developer.

[0132] As described above, the resolution pitch (Line / Space) of the line width / line spacing based on a 120㎛ coating film can be 6 / 14㎛ or less, and a fine pitch of 5 / 11㎛ or less can be implemented.

[0133] The above-mentioned resist pattern can be applied to the barrier of a power inductor or to a microelectromechanical system (MEMS) component, and best applied to the barrier of a power inductor.

[0134] Accordingly, by using the dry film photoresist of the present invention, a circuit having a fine line width is formed through a conventional etching / plating process, and productivity can be maximized in generating images for power inductors, MEMS, PCB lead frames, PDPs, other display devices, semiconductor devices, etc., having a fine line width through a known process.

[0135] According to the present invention, a photosensitive resin composition capable of minimizing contamination caused by stickiness during the exposure process while achieving high resolution, a dry film photoresist using the same, a method for manufacturing the same, a resist pattern, and an apparatus may be provided.

[0136] The operation and effects of the invention will be described in more detail below through specific embodiments. However, these embodiments are merely examples of the invention and do not define the scope of the invention.

[0137]

[0138] <Examples, Comparative Examples, Reference Examples>

[0139] A photosensitive resin composition was prepared by mixing 1 part by weight of a photocation initiator PAG-TR-21608 (Thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium) bis tetrakis(pentafluorophenyl)borate), 0.1 part by weight of a UV absorber Tinuvin 384-2, 0.1 part by weight of a leveling agent Tego Flow 425 (Polyether modified polysiloxane), and 25 parts by weight of a solvent MEK (Methyl Ethyl ketone) with 100 parts by weight of an epoxy resin mixture formulated with the components and amounts listed in Tables 1 and 2 below. The main characteristics of each epoxy resin component are listed in Table 3 below.

[0140] The above-mentioned photosensitive resin composition was comma-coated onto a PET substrate film (CT505 of Kolon Industries) with a thickness of 36 μm to form a photosensitive resin layer with a thickness of 120 μm. After coating, drying was performed using hot air according to the conditions listed in Tables 1 and 2 below, with a total area of ​​450 cm in width and 100 m in length.

[0141] A dry film photoresist was prepared by laminating a PET protective film onto a photosensitive resin layer that had been dried.

[0142]

[0143] Classification | Formulation | Ingredients | Example 1 | 2 | 34 | Epoxy Resin KEB-3165M 80 | 70.0 wt% - 70.0 wt% - KEB-3180M 80 | 70.0 wt% - 70.0 wt% KER-3001(YD-011) | 20.0 wt% 20.0 wt% KER-3004(YD-014) | 20.0 wt% 20.0 wt% - KES-7270 | 10.0 wt% 10.0 wt% 10.0 wt% 10.0 wt% Drying Conditions | 130 ℃, 40 min | 130 ℃, 40 min | 130 ℃, 40 min | 130 ℃, 40 min

[0144] Classification Mixture Comparison Example Reference Example 123412345 Epoxy Resin KEB-3165M80-70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%70.0 wt%YD-01420.0 wt%--20.0 wt%20.0 wt%20.0 wt%20.0 wt%20.0 wt%20.0 wt%20.0 wt%KES-727010.0 wt%10.0 wt%10.0 wt%-10.0 wt%10.0 wt%10.0 wt%10.0 wt%10.0 wt%KEB-3150M8070.0 wt%--------YD-136-20.0 wt%-------KER-3007(YD-017)--20.0 Weight %------KES-7260---10.0 Weight % Drying Conditions 130 ℃, 40 min 130 ℃, 40 min 130 ℃, 40 min 130 ℃, 40 min 130 ℃, 20 min 130 ℃, 60 min 120 ℃, 30 min 110 ℃, 30 min 140 ℃, 30 min

[0145] Raw Material Type | Raw Material Name | Softening Point (°C) | Epoxy Equivalent (g / eq) Bisphenol A Novolak Type Epoxy KEB-3165 M80 | 60 | 70 | 190 | 235 KEB-3180 M80 | 75 | 85 | 190 | 235 KEB-3150 M80 | 50 | 59 | 190 | 235 Bisphenol A Type Epoxy KER-3001 (YD-011) | 60 | 70 | 450 | 500 KER-3004 (YD-014) | 91 | 10 | 290 | 1,000 YD-136 | 40 | 190 | 235 KER-3007 (YD-017) | 115 | 125 | 1,750 | 1,950 Polyfunctional Novolak Epoxy KES-727065~75160~180 KES-726055~59145~175

[0146] * Measurement of softening point: The softening point was measured according to the ASTM E 28-14 standard. Specifically, epoxy resin was melted and poured into a round ring, and once the resin hardened, it was mounted on a softening point measuring device and a steel ball was placed on the hardened resin. Then, the temperature was increased at a rate of 5 ℃ / min, and the temperature at which the steel ball fell as the resin melted was measured as the softening point.

[0147] * Measurement of Epoxy Equivalent: An appropriate amount of sample (estimated equivalent value / 400) was placed in an Erlenmeyer flask and completely dissolved by adding 15 ml of 1,4-dioxane. After dissolution, 25 ml of 0.2 N HCl (dioxane) was accurately added. The lid was closed, and one or two drops of dioxane were placed at the boundary with the flask. The mixture was then closed and reacted at room temperature for 30 minutes. After the reaction, the flask and stopper were rinsed with approximately 10 ml of 2-methoxyethanol and placed in the flask. Three drops of cresol red indicator were added, and titration was performed using a 0.1 NaOH (methanol) solution, with the endpoint being the point where the color changed from pink to yellow and then to purple.

[0148] In addition, a blank test was conducted using the same method, except that no sample was added.

[0149] And, the epoxy equivalent was calculated using the following mathematical formula 1.

[0150] [Mathematical Formula 1]

[0151] Epoxy equivalent (g / eq) = 10,000 x W / {(BA) x F}

[0152] B: 0.1 N NaOH (methanol) consumption (ml) during blank titration

[0153] A: 0.1 N NaOH (methanol) consumption (ml) during sample titration

[0154] F: 0.1 N NaOH (methanol) Factor

[0155] W: Sample amount (g)

[0156]

[0157] <Experimental Example>

[0158] For the dry film photoresists prepared in the above examples, comparative examples, and reference examples, physical properties were measured by the following method, and the results are shown in Table 4.

[0159]

[0160] 1. Kinematic viscosity

[0161] For the photosensitive resin layer from which the protective film and substrate film were removed from the dry film photoresist prepared in the above examples, comparative examples, and reference examples, kinematic viscosity according to temperature was measured using a rheometer Discovery HR-2.

[0162]

[0163] 2. Stickiness upon exposure

[0164] The protective film of the dry film photoresist prepared in the above examples, comparative examples, and reference examples was peeled off and laminated onto both sides (front / back) of the PCB substrate, respectively, to form a laminate.

[0165] The above laminate was placed on the surface of an exposure equipment, and after peeling off the support PET film located at the top of the front surface of the laminate, the photosensitive resin layer on the front surface of the substrate film was exposed by irradiating ultraviolet light of a wavelength of 355 nm.

[0166] Afterwards, the laminate was rotated 180 degrees so that the photosensitive resin layer on the front side of the substrate film was in contact with the surface of the exposure equipment, and then the support PET film located at the top of the rear side of the laminate was peeled off, and the photosensitive resin layer on the rear side of the substrate film was exposed by irradiating ultraviolet light with a wavelength of 355 nm.

[0167] After the exposure was completed, the degree of stickiness during exposure was observed visually according to the following evaluation criteria.

[0168] (Evaluation Criteria)

[0169] OK: No photosensitive resin layer remaining on the surface of the exposure equipment

[0170] NG: Presence of a residual photosensitive resin layer on the surface of the exposure equipment

[0171]

[0172] 3. Residual solvent content

[0173] The residual solvent content of the dry film photoresist prepared in the above examples, comparative examples, and reference examples is measured using an Agilent GC-MS with a column DB-5MSUI (60 m x 320 µm x 1 µm) as described in the experimental examples below, and expressed in % units. The sample was dissolved in DMAc to a concentration of 10 wt% solution (10 wt% in DMAc), filtered using a syringe filter with a pore size of 0.45 µm, and injected into the GC-MS at 280 ehTL and 1 µl. He was used as the mobile phase and fed at 1 ml / min. The temperature was maintained at 40 ℃ for 4 minutes, then increased by 10 ℃ per minute to 320 ℃ for 3 minutes to measure the residual organic solvent content. In addition, the residual solvent (MEK) content in the sample is determined by substituting the peak area of ​​the residual solvent detected in the sample into the calibration curve formed by analyzing standard samples diluted with the solvent (MEK) in DMAc at six concentration levels using the same GC-MS analysis method. At this time, the linearity of the standard calibration curve is 0.999 or higher, and the instrument detection limit of the solvent (MEK) is 0.5 ppm. Since the sample was analyzed by dissolving it in DMAc at 10 wt%, considering the sample dilution ratio, reliable results can be obtained for residual solvent (MEK) present at 5 ppm or higher in the sample using this analysis method.

[0174]

[0175] 4. Mass production

[0176] Mass production capabilities were evaluated according to the following evaluation criteria. Comma coating of the photosensitive resin compositions prepared in the above examples, comparative examples, and reference examples was performed on a PET substrate film (CT505 of Kolon Industries) with a width of 450 cm to a thickness of 120 μm, with a total coating area of ​​430 cm in width and 100 m in length. Subsequently, hot air drying was performed, and it was determined that mass production capabilities were non-existent if the photosensitive resin flowed out of the PET during drying. In addition, it was determined that mass production capabilities were non-existent if the PET underwent thermal shrinkage of 1% or more, which caused thermal wrinkles.

[0177] (Evaluation Criteria)

[0178] OK: No thermal wrinkles in the PET film, and no flow of the photosensitive resin layer coated on the PET.

[0179] NG: Thermal wrinkles occur in the PET film due to thermal shrinkage of 1% or more, or flow occurs in the photosensitive resin layer coated on the PET.

[0180]

[0181] 5. Resolution

[0182] In order to peel off the protective film of the dry film photoresist prepared in the above examples, comparative examples, and reference examples so that the photosensitive resin layer of the dry film photoresist comes into contact with the surface of the copper layer of a brush-polished copper laminate, the laminator roll temperature is 90 ℃ and the roll pressure is 10 to 90 psi. Then, a laminate was formed by lamination using a HAKUTO MACH 610i under a roll speed of 0.5 min / m.

[0183] After peeling off the PET film serving as the support for the dry film photoresist, an LDI (Laser Direct Imaging System) exposure unit (Model: Paragon Ultra80) was used to apply 355nm wavelength ultraviolet light at 500mJ / cm² 2After irradiating with an exposure amount, the film was left for 10 minutes. Subsequently, it was heat-cured in a convection oven at 85°C for 20 minutes. Afterward, the heat-cured film was dipped into PGMEA (propylene glycol monomethyl ether acetate) at 30°C and developed for 20 minutes while undergoing sonication (600 MW, 1 MHz). After development, it was rinsed in isopropyl alcohol (IPA) for 10 minutes and dried in a convention oven for 10 minutes. In the completed laminate, the minimum value of the gap between photosensitive resin layers was measured using a ZEISS AXIOPHOT Microscope and evaluated as 1:1 Line & Space resolution. A smaller value indicates superior 1:1 resolution.

[0184] (Evaluation Criteria)

[0185] OK: Minimum spacing between photosensitive resin layers 20 µm or less

[0186] NG: Minimum spacing between photosensitive resin layers exceeds 20 µm

[0187]

[0188] Classification Preliminary Comparative Example Reference Example 1 2 3 4 1 2 3 4 1 2 3 4 5 Kinematic Viscosity @ 65 ℃ (Pa·s) 38 9 4 1 2 3 4 3 4 0 1 2 8 4 3 0 7 4 7 5 3 10 3 17 4 3 7 2 9 8 2 7 2 4 5 2 Stickiness upon Exposure OK OK OK OK NG NG OK NG NG OK Residual Solvent Content (ppm) 6 2 3 4 5 4 7 7 8 8 2 9 7 6 9 2 5 0 0 5 or less 4 0 0 8 4 0 0 5 or less Mass Production OK OK OK OK OK OK OK OK OK NG OK OK NG Resolution OK OK OK OK OK OK NG OK OK OK OK OK

[0189] Through the results of Table 4 above, it was confirmed that the dry film photoresists obtained in Examples 1 to 4 had less stickiness during exposure compared to Comparative Examples 1, 2, and 4, resulting in no contamination of the exposure equipment and improved process efficiency. In addition, it was confirmed that the dry film photoresists obtained in Examples 1 to 4 had a reduced residual solvent content and improved resolution compared to Comparative Example 3.

[0190] Meanwhile, in the case of Reference Examples 1, 3, and 4, compared to the Examples, there was a problem where the exposure equipment was contaminated due to stickiness during exposure, and the residual solvent content increased excessively, and in the case of Reference Examples 2 and 5, there was a problem where mass production was poor compared to the Examples.

Claims

1. Comprising three or more different types of epoxy resins, including a first epoxy resin, a second epoxy resin, and a third epoxy resin, and A photosensitive resin composition in which three or more different types of epoxy resins each independently have a softening point of 60°C to 105°C.

2. In Paragraph 1, The above-mentioned first epoxy resin is a photosensitive resin composition having a softening point of 60°C to 85°C.

3. In Paragraph 1, The above second epoxy resin is a photosensitive resin composition having a softening point of 60°C to 102°C.

4. In Paragraph 1, The above third epoxy resin is a photosensitive resin composition having a softening point of 65°C to 75°C.

5. In Paragraph 1, The above three or more different types of epoxy resins are, 55% to 85% by weight of first epoxy resin; 10% to 30% by weight of a second epoxy resin; and A photosensitive resin composition comprising 1% to 20% by weight of a third epoxy resin.

6. In Paragraph 1, The above-mentioned first epoxy resin is a photosensitive resin composition having an epoxy equivalent weight of 190 g / eq to 235 g / eq.

7. In Paragraph 1, The above second epoxy resin is a photosensitive resin composition having an epoxy equivalent weight of 450 g / eq to 1000 g / eq.

8. In Paragraph 1, The above third epoxy resin is a photosensitive resin composition having an epoxy equivalent of 160 g / eq to 180 g / eq.

9. In Paragraph 1, The first epoxy resin above is a bisphenol A novolak-type epoxy resin, and The above second epoxy resin is a bisphenol A type epoxy resin, and The above-mentioned third epoxy resin is a photosensitive resin composition in which the third epoxy resin is a polyfunctional novolak epoxy resin.

10. In Paragraph 1, The above photosensitive resin composition further comprises a cationic initiator containing a sulfonium complex salt.

11. In Paragraph 10, A photosensitive resin composition comprising one or more selected from the group consisting of thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium)bistetrakis(pentafluorophenyl)borate, thio-p-phenylenebis(4,4'-dimethyldiphenylsulfonium)hexafluorophosphate, triarylsulfonium bistetrakis(pentafluorophenyl)borate, triarylsulfonium hexafluorophosphate, and 4-{[4-(diphenylsulfonium)phenyl]sulfanyl}phenyl)diphenylsulfonium)hexafluorophosphate.

12. In Paragraph 1, A photosensitive resin film containing a dried product of the above photosensitive resin composition is a photosensitive resin composition having a kinematic viscosity measured by a rheometer of 330 Pa·s to 420 Pa·s in the 65 ℃ range.

13. In Paragraph 1, A photosensitive resin composition having a residual solvent content of 2000 ppm or less in a photosensitive resin film containing a dried product of the above photosensitive resin composition.

14. A dry film photoresist comprising a photosensitive resin layer containing the photosensitive resin composition of claim 1.

15. In Paragraph 14, The above photosensitive resin layer is a dry film photoresist having a residual solvent content of 2000 ppm or less.

16. In Paragraph 14, The above photosensitive resin layer is a dry film photoresist having a kinematic viscosity measured by a rheometer of 330 Pa·s to 420 Pa·s in the 65 ℃ range.

17. A step of coating the photosensitive resin composition of claim 1 onto a polymer substrate; and A method for manufacturing a dry film photoresist comprising the step of drying the above-mentioned coated photosensitive resin composition.

18. In Paragraph 17, A method for manufacturing a dry film photoresist, wherein the step of drying the coated photosensitive resin composition is carried out at a temperature of 125°C to 135°C for 35 to 50 minutes.

19. A resist pattern comprising a pattern of a photosensitive resin layer containing a cured product of the photosensitive resin composition of claim 1.

20. A device comprising the resist pattern of claim 19, or a metal pattern formed by the resist pattern of claim 19.

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