Radioactive battery and power device

Abstract

The present application may provide a radioactive battery comprising: a plurality of radioactive battery cells including an electrode that has a first electrode and a second electrode, a radiation source that is disposed between the first electrode and the second electrode, and an energy conversion layer that is disposed between the first electrode and the second electrode and does not overlap the radiation source when viewed in a first direction perpendicular to the upper surface of the electrode; and connectors disposed in at least some gaps between any adjacent radioactive battery cells of the plurality of radioactive battery cells so as to electrically connect each electrode of the adjacent radioactive battery cells to each other.

Description

Radioactive batteries and power devices

[0001] Cross-citation with related applications

[0002] This application is based on Korean Patent Applications No. 10-2024-0129039 and No. 10-2025-0137432, which were filed with the Korean Intellectual Property Office on September 24, 2024 and September 23, 2025, respectively, and whose contents are incorporated in whole into this application by reference herein, and claims priority thereof.

[0003] Technology field

[0004] The present application relates to a radioactive battery and a power device including the radioactive battery.

[0005] A radioisotope is an element that decays into a stable isotope while emitting radiation. Known modes of radioisotope decay include alpha decay, beta decay, and gamma decay. In other words, depending on the type of radioisotope, it emits alpha, beta, or gamma rays. The time it takes for a radioisotope to decay and reduce its radioactivity to half of its initial level is called the half-life. The type of radiation emitted due to decay and the half-life can be determined by the specific type of radioisotope.

[0006] A radioactive cell or isotope cell is a battery designed to convert the nuclear fission energy of a decaying radioactive isotope into electrical energy for use as an electrical power source. For example, a betavoltaic cell is a battery that utilizes beta rays, which are radiation emitted from a decaying radioactive isotope. The beta rays are absorbed by a semiconductor with a PN junction to form electron-hole pairs from the depletion layer, and the formed electrons and holes can be used as an electrical power source.

[0007] The present application aims to provide a radioactive battery and a power device that can be applied to electronic products requiring high power by producing high-density power.

[0008] A radioactive battery according to one embodiment of the present application may include an electrode comprising a first electrode and a second electrode, a radioactive source disposed between the first electrode and the second electrode, and a plurality of radioactive battery cells comprising an energy conversion layer disposed between the first electrode and the second electrode but not overlapping with the radioactive source when viewed from a first direction perpendicular to the upper surface of the electrode, and a connector disposed in at least some of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells to electrically connect each electrode of the adjacent radioactive battery cells to each other.

[0009] In a radioactive battery according to one embodiment of the present application, the connector may include a first connector that electrically connects each first electrode of an adjacent radioactive battery cell and a second connector that electrically connects each second electrode of an adjacent radioactive battery cell.

[0010] A radioactive battery according to one embodiment of the present application further comprises an insulating layer disposed in at least some of the gaps existing between any adjacent radioactive battery cells of a plurality of radioactive battery cells, and a connector can penetrate the insulating layer.

[0011] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may have an energy conversion layer surrounding at least a portion of a first electrode, a radioactive source surrounding at least a portion of the energy conversion layer, and a second electrode surrounding at least a portion of the radioactive source.

[0012] In a radioactive battery according to one embodiment of the present application, the energy conversion layer comprises an N-type semiconductor and a P-type semiconductor, the N-type semiconductor surrounds at least a portion of the P-type semiconductor, and the P-type semiconductor can surround at least a portion of the first electrode.

[0013] In a radioactive battery according to one embodiment of the present application, the radioactive battery cell may further include a hole transport layer disposed between a first electrode and an N-type semiconductor.

[0014] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may have an energy conversion layer in contact with at least some of the radioactive source.

[0015] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells include a through hole formed along a first direction perpendicular to the upper surface of the electrode, where at least one of the first electrode and the second electrode is formed, and the connector may include a region disposed in at least a portion of the through hole.

[0016] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may further include a dielectric layer in which at least some of the first electrodes surround at least some of them.

[0017] A radioactive battery according to one embodiment of the present application may further include a shielding member that encloses a plurality of radioactive battery cells and a connector.

[0018] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may have a radioactive source surrounding at least a portion of a first electrode, an energy conversion layer surrounding at least a portion of a radioactive source, and a second electrode surrounding at least a portion of an energy conversion layer.

[0019] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells have an energy conversion layer comprising a first energy conversion layer and a second energy conversion layer, a radioactive source surrounds at least a portion of the first energy conversion layer, and the second energy conversion layer can surround at least a portion of the radioactive source.

[0020] A radioactive battery according to one embodiment of the present application may include a plurality of radioactive battery cells comprising an electrode including a first electrode and a second electrode, an energy conversion layer disposed between the first electrode and the second electrode, and a radioactive source disposed on at least one of the first electrode and the second electrode, and a connector disposed in at least part of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells to electrically connect each electrode of the adjacent radioactive battery cells to each other.

[0021] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may not penetrate the first electrode or the second electrode in a first direction perpendicular to the upper surface of the electrode.

[0022] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may have an energy conversion layer in contact with at least some of the radioactive source, at least some of the first electrode, and at least some of the second electrode.

[0023] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells have an energy conversion layer comprising an N-type semiconductor and a P-type semiconductor, the N-type semiconductor surrounds at least a portion of the P-type semiconductor, the P-type semiconductor surrounds at least a portion of the first electrode, and a radioactive source is disposed on the second electrode but may not penetrate the second electrode along a first direction perpendicular to the upper surface of the electrode.

[0024] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells may have an extended shape in which the radioactive source extends away from the energy conversion layer when viewed from a first direction perpendicular to the upper surface of the electrode.

[0025] In a radioactive battery according to one embodiment of the present application, the extension shape is one of a plurality of extension shapes, and the plurality of extension shapes may not overlap each other when viewed from a first direction.

[0026] In a radioactive battery according to one embodiment of the present application, at least some of the plurality of radioactive battery cells include a first radioactive source disposed at a first electrode and a second radioactive source disposed at a second electrode, and the first radioactive source and the second radioactive source may not overlap with each other with respect to the radiation direction directed outward from the center of the radioactive battery.

[0027] A power device according to one embodiment of the present application may include a radioactive battery and a load that receives power generated from the radioactive battery through a wire line. Additionally, a power device according to one embodiment may include an electrode comprising a first electrode and a second electrode, a radiation source disposed between the first electrode and the second electrode, and a plurality of radioactive battery cells comprising an energy conversion layer disposed between the first electrode and the second electrode but not overlapping with the radiation source when viewed from a first direction perpendicular to the upper surface of the electrode, and a connector disposed in at least some of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells to electrically connect each electrode of the adjacent radioactive battery cells to each other, wherein the connector may include a radioactive battery comprising a first connector electrically connecting each first electrode of the adjacent radioactive battery cell and a second connector electrically connecting each second electrode of the adjacent radioactive battery cell, a wire line comprising a first wire line electrically connected to the first connector and a second wire line electrically connected to the second connector, and a load disposed to be electrically connected to the first wire line and the second wire line.

[0028] A power device according to one embodiment of the present application may further include an energy storage device that receives power generated from a radioactive battery through a power line and a switching device that connects the power line to a load or the energy storage device.

[0029] The present application can provide a radioactive battery and a power device that can be applied to electronic products requiring high power by producing high-density power.

[0030] FIG. 1 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0031] FIG. 2 is a perspective view illustrating parts of adjacent radioactive cell cells in a radioactive battery according to one embodiment of the present application.

[0032] FIG. 3 is a plan view illustrating at least a portion of a radioactive battery cell according to one embodiment of the present application.

[0033] Figures 4a, 4b, 4c, 4d, and 4e are enlarged views of section P of Figure 3, showing a plan view of the interface between the radioactive source and the energy conversion layer.

[0034] Figures 5a, 5b, 5c, 5d, and 5e are enlarged views of the Q portion of Figure 3, which are plan views showing the interface between the N-type semiconductor and the P-type semiconductor.

[0035] FIGS. 6 to 9 are plan views illustrating at least a portion of a radioactive battery cell according to one embodiment of the present application.

[0036] FIG. 10 is a perspective view partially illustrating parts of adjacent radioactive cell cells in a radioactive battery according to one embodiment of the present application.

[0037] FIG. 11 is a plan view illustrating at least a portion of a radioactive battery cell according to one embodiment of the present application.

[0038] FIG. 12 is a perspective view partially illustrating at least a portion of a radioactive battery cell according to one embodiment of the present application.

[0039] FIG. 13 briefly illustrates the structure of a power device according to one embodiment of the present application.

[0040] FIGS. 14 to 16 are plan views illustrating at least a portion of a radioactive battery cell according to another embodiment of the present application.

[0041] Prior to the detailed description of this application, terms and words used in this specification and claims may not be interpreted as being limited to their ordinary or dictionary meanings. Furthermore, based on the principle that the inventor may appropriately define the concept of terms to best describe their invention, they may be interpreted in a meaning and concept consistent with the technical spirit of the invention. The embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of this application and may not represent all of the technical spirit of this application. Therefore, various equivalents and modifications that can replace them may exist at the time of filing this application.

[0042] Identical reference numbers or symbols in each drawing attached to this specification may represent parts or components that perform substantially the same function. For convenience of explanation and understanding, the same reference numbers or symbols may be used to describe different embodiments. That is, even if components having the same reference number are depicted in multiple drawings, the multiple drawings may not all represent a single embodiment.

[0043] The drawings shown in this application are in accordance with embodiments of this application, and the ratios of the width, height, or thickness (or height) of each component are intended to explain this application in detail and may differ from the actual. Additionally, in the coordinate system shown in the drawings, each axis may be perpendicular to the others, the direction indicated by the arrow may be the + direction, and the direction exactly opposite to the direction indicated by the arrow (a direction rotated 180 degrees) may be the - direction.

[0044] In the following description, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "comprising" or "constituting" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0045] Additionally, in the following description, expressions such as upper side, top, lower side, bottom, side, front, and rear are based on the direction depicted in the drawing, and may be expressed differently if the direction of the object changes.

[0046] Additionally, in this specification and claims, terms including ordinal numbers, such as "first," "second," etc., may be used to distinguish between components. Such ordinal numbers are used to distinguish identical or similar components from one another, and the meaning of the terms should not be limited by the use of such ordinal numbers. For example, the order of use or arrangement of components combined with such ordinal numbers should not be limited by the number. If necessary, each ordinal number may be used interchangeably.

[0047] Hereinafter, embodiments of the present application will be described in detail with reference to the attached drawings. However, the scope of the present application is not limited to the embodiments presented. For example, a person skilled in the art who understands the scope of the present application may propose other embodiments that fall within the scope of the scope of the present application by adding, changing, or deleting components, and such are also to be considered to be within the scope of the scope of the present application. In the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0048] FIG. 1 is a perspective view showing at least a portion of a radioactive battery (10) according to one embodiment of the present application. FIG. 2 is a perspective view showing a portion of radioactive battery cells (100A, 100B) adjacent to each other in a radioactive battery (10) according to one embodiment of the present application. FIG. 3 is a plan view showing at least a portion of a radioactive battery cell (100) according to one embodiment of the present application.

[0049] The present application may provide a radioactive battery (10) that can be applied to electronic products requiring high power by generating high-density energy. Electronic products requiring high power may include, for example, semiconductor memory such as DRAM or NAND FLASH, processors, mobile devices, automobiles, drones, and computers.

[0050] A radioactive battery (10) according to one embodiment of the present application may include a radioactive battery cell (100). In one example, the radioactive battery (10) may include a plurality of radioactive battery cells (100) and may be electrically connected. In one example, the radioactive battery (10) may be advantageous for generating high-density energy by electrically connecting a plurality of radioactive battery cells (100).

[0051] A radioactive cell (100) according to one embodiment of the present application may include an electrode (110). The electrode (110) may include an anode that provides electrons and a cathode that receives electrons.

[0052] In one example, the electrode (110) may include a first electrode (111) and a second electrode (112). The second electrode (112) may be the opposite electrode of the first electrode (111). That is, if the first electrode (111) is an anode, the second electrode (112) may be a cathode, and if the first electrode (111) is a cathode, the second electrode (112) may be an anode. In one example, the first electrode (111) may be a cathode and the second electrode (112) may be an anode.

[0053] In one example, the electrode (110) may include a current collector. The type, size, and shape of the electrode (110) are not particularly limited as long as it is electrically conductive without causing physical and chemical changes with other components within the radioactive cell (10). For example, the electrode (110) may be cylindrical, tetrahedral, hexahedral, or torus-shaped. Additionally, the electrode (110) may have a shape with a hollow center. Furthermore, for example, the electrode (110) may include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO). 2-x Sn x O3, 0 <x<2)과 같은 투명 산화물을 포함하거나, 또는 탄소 나노 튜브(carbon-nano tube), 그래핀(graphene) 또는 산화 그래핀 등 탄소 계열 화합물을 포함할 수 있다.

[0054] A radioactive battery cell (100) according to one embodiment of the present application may include a radioactive source (120). The radioactive source (120) may be disposed between a first electrode (111) and a second electrode (112).

[0055] In one example, the radioactive source (120) may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it decays and emits radiation. For example, the radioactive isotope is americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 252Cf) and berkelium-249( 249 It may include alpha-emitting isotopes containing one or more of Bk). In another example, the radioactive isotope is tritium ( 3 H, tritium), potassium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 It may include a beta-emitting isotope containing one or more of W). In another example, the radioactive isotope is cobalt-60 ( 60 Co), cesium-137 137 Cs), iodine-131( 131 I), Gallium-67( 67 Ga) and thallium-201( 201It may include a gamma-emitting isotope containing one or more of Tl). The radioactive isotope contained in the radioactive source (120) may include an alpha-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include a beta-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include one or more of an alpha-emitting isotope and a beta-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include one or more of an alpha-emitting isotope, a beta-emitting isotope, and a gamma-emitting isotope.

[0056] In one example, the radiation source (120) may be manufactured by one or more of, for example, electroplating, electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Among these, the electroplating method may be appropriate considering radiation shielding and safety of the worker.

[0057] In one example, the radioactive source (120) can be prepared as a plating solution for electroplating. For example, nickel-63 ( 63 When using Ni), nickel-62 ( 62 Nickel-63 (Ni) by irradiating with neutrons 63 After manufacturing Ni), chlorinate it 63 Nickel-63 by generating NiCl2 ( 63 A plating solution for Ni can be prepared. Or Nickel-62 ( 62 First, chlorine (Ni) 62 After preparing NiCl2, irradiate with neutrons 63 Nickel-63 containing NiCl2 ( 63 A plating solution for Ni can be prepared, but is not limited thereto.

[0058] In one example, the plating solution may further include additives such as a pH regulator and a pH stabilizer, which can help in the uniform formation of the radioactive source (120) by controlling the plating speed or growth rate.

[0059] A radioactive battery cell (100) according to one embodiment of the present application may include an energy conversion layer (130) disposed between a first electrode (111) and a second electrode (112) and not overlapping with a radioactive source (120) when viewed from a first direction (D1) perpendicular to the upper surface (100US), which is the first direction (D1) surface of the radioactive battery cell (100). Meanwhile, the upper surface (100US), which is the first direction (D1) surface of the radioactive battery cell (100), may be disposed on the same plane as the upper surface (110US), which is the first direction (D1) surface of the electrode (110). Additionally, the lower surface (100BS) opposite to the upper surface (100US) of the radioactive cell (100) with respect to the first direction (D1) may be positioned on the same plane as the lower surface (110BS) opposite to the upper surface (110US) of the electrode (110).

[0060] Additionally, the first direction (D1) perpendicular to the upper surface (100US) of the radioactive battery cell (100) is the same as the first direction (D1) perpendicular to the upper surface (110US) of the electrode (110). In this specification, the first direction (D1) perpendicular to the upper surface (100US) of the radioactive battery cell (100) may be used with the same meaning as the first direction (D1) perpendicular to the upper surface (110US) of the electrode (110). That is, the energy conversion layer (130) is disposed between the first electrode (111) and the second electrode (112), but may not overlap with the radiation source (120) when viewed from the first direction (D1) perpendicular to the upper surface (110US) of the electrode (110).

[0061] In one example, a plurality of radioactive cell (100) may be stacked along one direction. That is, the direction in which the plurality of radioactive cell (100) are stacked may, for example, mean a first direction (D1). Having a structure in which a plurality of radioactive cell (100) are stacked is advantageous in terms of yield and scale-up.

[0062] Unless specifically defined in the present specification, the first direction (D1) may mean a direction perpendicular to the upper surface (100US) of the radioactive battery cell (100). The second direction (D2) may intersect (e.g., perpendicularly) the first direction (D1) and may mean a direction horizontal to the upper surface (100US) of the radioactive battery cell (100). The third direction (D3) may intersect (e.g., perpendicularly) the first direction (D1) and the second direction (D2) and may mean a direction horizontal to the upper surface (100US) of the radioactive battery cell (100).

[0063] In one example, the energy conversion layer (130) can form electron-hole pairs by radiation emitted from a radiation source (120). In one example, the energy conversion layer (130) can be provided as an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye-sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs by radiation.

[0064] In one example, the inorganic layer may include an inorganic material that generates electrical energy upon receiving light. The inorganic material is not particularly limited but may include, for example, one or more of silicon, single-crystal silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, chalcopyrite compounds, perovskite compounds, and castoride compounds.

[0065] InGaSe may comprise one or more of the elements or mixtures of In, In4Se3, InSe, In2Se3, GaSe, Ga2Se3, and Se; CuSe may comprise one or more of the elements or mixtures of Cu, Cu2Se, CuSe2, and Se; and InSe may comprise one or more of the elements or mixtures of In, In4Se3, InSe, In2Se3, and Se. The chalcopyrite compound may comprise, for example, one of CuAlS2, CuAlSe2, CuAlTe2, CuGaS2, CuGaSe2, CuGaTe2, CuInS2, CuInSe2, CuInTe2, AgAlS2, AgAlSe2, AgAlTe2, AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, and AgInTe2. The perovskite compound may comprise, for example, one or more of SrTiO3 and CaTiO3. The castorite compound may include, for example, a castorite compound of group I2-II-IV-VI4, and specifically may include one or more of Cu2ZnSnS4, Cu2ZnSnSe4, Cu2ZnGeS4, Cu2ZnGeSe4, Cu2MnSnS4, Cu2MnSnSe4, Cu2MnGeS4, Cu2MnGeSe4, Ag2ZnSnS4, Ag2ZnSnSe4, Ag2ZnGeS4, Ag2MnSnS4, Ag2MnSnSe4, Ag2MnGeS4, and Ag2MnGeSe4.

[0066] The organic layer may contain organic materials that generate electrical energy upon receiving light. Inorganic materials are not specifically limited, but for example, fullerene (C 60It may include one or more of the following: )-type compounds, phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), phenylpyridine derivatives such as 4,6-bis(3,5-di-4-pyridinylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), thiophene derivatives such as poly(3-hexylthiophene-2,5-diyl)(P3HT), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophene.

[0067] The organic-inorganic hybrid layer may include an organic-inorganic hybrid material that generates electrical energy upon receiving light. The organic-inorganic hybrid material is not particularly limited but may include organic-inorganic perovskite compounds, for example, halide-based organic-inorganic perovskite compounds. The organic-inorganic hybrid material is CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, CH3NH3PbI3 (3-x) Cl x , CH3NH3PbI (3-x) Br x , CH3NH3PbBr (3-x) Cl x , CH3NH3Pb (1-y) Sn y I3, CH3NH3Pb (1-y) Sn y Br3, CH3NH3Pb (1-y) Sn y Cl3, CH3NH3Pb (1-y) Sn y I (3-x) Cl x , CH3NH3Pb (1-y) Sn y I (3-x) Br x and CH3NH3Pb (1-y) Sn y Br (3-x) Cl xIt may include one or more of the above compounds (0≤x≤3, 0≤y≤1), and may also include CFH2NH3, CF2HNH3, CF3NH3, or NH2CH=NH2 instead of CH3NH3 in the above compounds.

[0068] The dye-sensitized layer may include a dye that generates electrical energy upon receiving light. The dye may include one or more of ruthenium complexes, indoline organic dyes, and natural dyes, although it is not particularly limited. Ruthenium complexes may include, for example, one or more of N3 and N719. Indoline organic dyes may include, for example, D149. Natural dyes are those that can be extracted from fruits or vegetables, and may include, for example, one or more of anthocyanin, chlorophyll, beta-carotene, curcumin, betalain, and rosmarinic acid.

[0069] In one example, the energy conversion layer (130) may include a scintillator that absorbs the energy of radiation generated from a radiation source (120) and converts it into light energy or electrical energy.

[0070] For example, the energy conversion layer (130) may include at least a scintillator inside. In another example, the energy conversion layer (130) may include a thin film layer including a scintillator provided on at least one surface.

[0071] In one example, the scintillator may include one or more of inorganic and organic compounds, though not specifically limited. Inorganic compounds are, for example, NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BGO, BaF2, CaF2(Eu), ZnS(Ag), CaWO4, CdWO4, YAG(Ce) (Y3Al5O 12 It may include one or more of (Ce)), GSO, LSO, GAGG:Ce, ZnO(Ga), LaCl3(Ce), and LaBr3(Ce). Organic compounds may include, for example, one or more of anthracene, stilbene, naphthalene, and polyethylene naphthalate.

[0072] In one example, the energy conversion layer (130) may include an N-type semiconductor (131) and a P-type semiconductor (132). In one example, the N-type semiconductor (131) may be silicon or diamond doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table, or it may be a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN). In one example, the P-type semiconductor (132) may be silicon or diamond doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or it may be a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0073] In one example, the N-type semiconductor (131) and the P-type semiconductor (132) may each independently include a metal oxide having the chemical formula AMO3. Here, A is one selected from La, Ba, Sr, and K, and M may be one selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, the N-type semiconductor (131) and the P-type semiconductor (132) may each independently include a plurality of metal oxides of different types. Different types may mean that the elements of A or M are different. In one example, the N-type semiconductor (131) and the P-type semiconductor (132) may form a homojunction with each other.

[0074] For example, the N-type semiconductor (131) and the P-type semiconductor (132) are each independently BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (Here 0 <x<1) 및 LaAlO3중 하나 이상을 포함할 수 있다. 일 예에서, 전극(110)과 에너지 변환층(130)은 예를 들어 증착(deposition) 또는 에픽텍셜(epitaxial) 성장 등을 통해 제조될 수 있으나, 이에 한정되는 것은 아니다. 여기서, 증착은 물리 기상 증착(PVD), 화학 기상 증착(CVD) 및 원자층 증착(ALD) 중 하나 이상일 수 있다.

[0075] In a radioactive battery (10) according to one embodiment of the present application, at least some of the plurality of radioactive battery cells (100) may have an energy conversion layer (130) surrounding at least a portion of the first electrode (111). Additionally, a radioactive source (120) may surround at least a portion of the energy conversion layer (130). Additionally, a second electrode (112) may surround at least a portion of the radioactive source (120). In a radioactive battery (10) according to another example, the energy conversion layer (130) may be spaced apart from both the first electrode (111) and the second electrode (112) within a cross-section of the radioactive battery cell (100) (e.g., plane D2-D3 of FIG. 1).

[0076] In one example, the energy conversion layer (130) may surround the side of the first electrode (111). Additionally, the radiation source (120) may surround the side of the energy conversion layer (130). Additionally, the second electrode (112) may surround the side of the radiation source (120). In this specification, the side of the radioactive battery cell (100), electrode (110), radiation source (120), or energy conversion layer (130) may mean a surface other than the upper surface (100US) and lower surface (100BS), which are the first direction (D1) surfaces.

[0077] In one example, the energy conversion layer (130) may be in contact with at least a portion of the first electrode (111). Additionally, the radiation source (120) may be in contact with at least a portion of the energy conversion layer (130). Additionally, the second electrode (112) may be in contact with at least a portion of the radiation source (120).

[0078] In one example, the N-type semiconductor (131) may be located on the side of the P-type semiconductor (132) in the D2-D3 plane (e.g., between the P-type semiconductor (132) and the second electrode (112). Likewise, the P-type semiconductor (132) may be located on the side of the N-type semiconductor (131) (e.g., between the N-type semiconductor (131) and the first electrode (111).

[0079] In one example, the N-type semiconductor (131) may surround at least a portion of the P-type semiconductor (132). Additionally, the N-type semiconductor (131) may surround the side of the P-type semiconductor (132). In one example, the surface area of ​​the N-type semiconductor (131) may be larger than the surface area of ​​the P-type semiconductor (132). Meanwhile, the first electrode (111) may be an anode and the second electrode (112) may be a cathode.

[0080] In one example, the P-type semiconductor (132) may surround at least a portion of the first electrode (111). Additionally, the P-type semiconductor (132) may surround the side of the first electrode (111). Meanwhile, the first electrode (111) may be a cathode and the second electrode (112) may be an anode.

[0081] In one example, the energy conversion layer (130) may come into contact with at least a portion of the radioactive source (120). For example, by positioning the energy conversion layer (130) and the radioactive source (120) in contact, radiation generated from the radioactive source (120) may easily reach the depletion region of the energy conversion layer (130) to form electron-hole pairs.

[0082] A radioactive battery cell (100) according to one embodiment of the present application may include a connector (200) disposed in at least some of the gaps existing between any adjacent radioactive battery cells (100A, 100B) of a plurality of radioactive battery cells (100) to electrically connect each electrode (110) of the adjacent radioactive battery cells (100A, 100B) to each other.

[0083] In one example, the connector (200) may include a conductive material. Here, the conductive material may include one or more selected from the group consisting of, for example, tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, and shape of the connectors (200) may be changed according to the design without being limited to those illustrated. Referring to FIG. 1, the connector (200) may have the form of a solder ball or a solder bump.

[0084] Referring to FIG. 2, in one example, the connector (200) may include a first connector (210) that electrically connects each first electrode (111A, 111B) of adjacent radioactive battery cells (100A, 100B) and a second connector (220) that electrically connects each second electrode (112A, 112B) of adjacent radioactive battery cells (100A, 100B).

[0085] In one example, adjacent radioactive battery cells (100A, 100B) may include a first radioactive battery cell (100A) and a second radioactive battery cell (100B). The configurations included in each radioactive battery cell (100A, 100B) may refer to the foregoing or subsequent descriptions, unless contradictory. The first radioactive battery cell (100A) may include an electrode (110A) comprising a first-1 electrode (111A) and a first-2 electrode (112A), a first radioactive source (120A), and a first energy conversion layer (130A). The second radioactive battery cell (100B) may include an electrode (110B) comprising a second-1 electrode (111B) and a second-2 electrode (112B), a second radioactive source (120B), and a second energy conversion layer (130B).

[0086] In one example, the first connector (210) may come into contact with each of the first-1 electrode (111A) and the second-1 electrode (111B) to electrically connect them to each other. The second connector (220) may come into contact with each of the first-2 electrode (112A) and the second-2 electrode (112B) to electrically connect them to each other.

[0087] Referring to FIG. 1, in one example, one or more connectors (200) may be placed between each of the plurality of radioactive battery cells (100), so that the first electrode (111) of each radioactive battery cell (100) in the plurality of radioactive battery cells (100) may all be electrically connected to the first connector (210), and the second electrode (112) may all be electrically connected to the second connector (220). Through this structure, the radioactive battery cell (100) can generate high-density energy.

[0088] A radioactive battery (10) according to one embodiment of the present application may include an insulating layer (300) disposed in at least some of the gaps existing between any adjacent radioactive battery cells (100A, 100B) of a plurality of radioactive battery cells (100) stacked along a first direction (D1). In one example, the insulating layer (300) may be disposed between adjacent radioactive battery cells (100) in which a connector (200) is disposed. Meanwhile, the insulating layer (300) can prevent a short circuit caused by contact between electrodes. The insulating layer (300) can prevent unexpected damage, etc., caused by radiation, etc., generated from a radiation source (120) of each radioactive battery cell (100) being transmitted to other radioactive battery cells (100). In this regard, the insulating layer (300) may be made of or include a material or a combination of materials that shield beta rays, and the aforementioned material may include shielding materials described herein or known in the art. For example, the insulating layer (300) may include a composite material such as a beta ray shielding material, and the composite material may be surrounded by an outer layer comprising an electrically insulating material. This outer layer may be located above or below the beta ray shielding material, for example, according to the first direction (D1), as well as around the connector (200) in the second-third direction (D2-D3) plane (i.e., between each connector (200) and the beta ray shielding material).

[0089] In one example, the insulating layer (300) is not particularly limited to any material having electrical insulating properties, but may include, for example, one or more selected from the group consisting of silicate (e.g. TEOS), silicon nitride (SiN, silicon nitride), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0090] In one example, the connector (200) may penetrate the insulating layer (300). Specifically, the connector (200) may include an area exposed from both surfaces of the insulating layer (300) and an area embedded in the insulating layer (300).

[0091] In one example, the connector (200) can electrically connect each electrode (110) of an adjacent radioactive battery cell (100) through an area exposed from both surfaces of the insulating layer (300). In addition, in one example, the connector (200) can stably electrically connect each electrode (110) of an adjacent radioactive battery cell (100) by fixing its position to an area embedded in the insulating layer (300).

[0092] In one example, referring to FIG. 2, the width (LT) of the radioactive cell (100) may be greater than the thickness (TH) of the radioactive cell (100). Here, the width (LT) of the radioactive cell (100) may mean the width in the second direction (D2) or the third direction (D3), and the thickness (TH) of the radioactive cell (100) may mean the width in the first direction (D1). This allows for the formation of a more compact stacked structure of the radioactive cell (100).

[0093] In one example, the ratio (TH / LT) of the thickness (TH) of the radioactive cell (100) to the width (LT) of the radioactive cell (100) may be 0.005 to 0.01, 0.0055 to 0.015, or 0.006 to 0.02. This allows for the formation of a more dense stacked structure of the radioactive cell (100). Additionally, the width (LT) of the radioactive cell (100) may be, for example, 1 cm to 50 cm, 5 cm to 30 cm, or 10 cm to 20 cm. Additionally, the thickness (TH) of the radioactive cell (100) may be, for example, 10 μm to 300 μm, 50 μm to 250 μm, or 100 μm to 200 μm.

[0094] FIGS. 4a, 4b, 4c, 4d, and 4e are enlarged views of the P portion of FIG. 3, showing a plan view of the interface between the radiation source (120) and the energy conversion layer (130). FIGS. 5a, 5b, 5c, 5d, and 5e are enlarged views of the Q portion of FIG. 3, showing a plan view of the interface between the N-type semiconductor (131) and the P-type semiconductor (132).

[0095] In a radioactive battery cell (100) according to one embodiment of the present application, radiation generated from a radioactive source (120) may be incident on an energy conversion layer (130) over a relatively wide area, which may be advantageous for high output. For example, as described above, the energy conversion layer (130) and the radioactive source (120) may come into contact with each other in at least a portion of the area to form an interface, and specifically, the radioactive source (120) may form an interface with an N-type semiconductor (131). As the contact surface area between the radioactive source (120) and the N-type semiconductor (131) increases, the amount of electron-hole pairs formed per unit time increases, so the efficiency of the radioactive battery (10) is improved.

[0096] In one example, the radioactive source (120) and the N-type semiconductor (131) may define a boundary that extends perpendicularly to the direction in which the radioactive source (120) and the N-type semiconductor (131) are separated from each other. For example, if the radioactive source (120) and the N-type semiconductor (131) are side by side in a cross-section of the radioactive cell (10) (e.g., D2-D3 plane), the boundary may be flat to form a parallel interface (see FIG. 4a). Alternatively, if the radioactive source (120) and the N-type semiconductor (131) are concentric with respect to each other (e.g., a cylindrical radioactive cell (100)), the interface may extend at a fixed radius from the central axis of the radioactive cell (100). In another example, the radioactive source (120) and the N-type semiconductor (131) may have various shapes of interfaces to increase the surface area in contact with each other. For example, a portion of the interface may be extended along a direction in which the radioactive source (120) and the N-type semiconductor (131) are spaced apart from each other (e.g., the radial direction of the cylindrical radioactive cell (100)). Specifically, the interface may have an uneven shape such as a concave block shape (see FIG. 4b), a concave triangle shape (see FIG. 4c), a wave shape (see FIG. 4d), a stepped triangle (see FIG. 4e), or a sine wave shape (not shown), and the uneven shape may form a pattern. However, this is merely an example, and the shape of the interface is not particularly limited as long as the contact surface area is increased.

[0097] Referring to FIGS. 4b through 4e, in the stacking direction of the radioactive source (120) and the N-type semiconductor (131), the distance between the low point and the high point of the uneven shape of the interface can be called the first height (h1). In one example, the stacking direction of the radioactive source (120) and the N-type semiconductor (131) may be the second direction (D2) or the third direction (D3). In FIGS. 4b through 4e, the stacking direction of the radioactive source (120) and the N-type semiconductor (131) may mean the third direction (D3). In one example, the first height (h1) may be 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the radioactive source (120) or the N-type semiconductor (131), but is not limited thereto. Here, the width of the radioactive source (120) or the N-type semiconductor (131) may mean the width in the second direction (D2) or the third direction (D3), for example, with reference to FIG. 3.

[0098] Referring to FIGS. 4b through 4e, in a direction perpendicular to the first height (h1) direction of the uneven shape (e.g., third direction (D3)) (e.g., second direction (D2)), the uneven shape may have a pattern having a first width (d1). The first width (d1) is 10 times the width of the radioactive source (120) or the N-type semiconductor (131). -5 % to 30%, 10 -4 % to 30%, 10 -3 % to 30% or 10 -2 It may be % to 30%, but is not limited thereto.

[0099] In one example, the first area (S) is the area when the interface between the radioactive source (120) and the N-type semiconductor (131) is cut flat without irregularities in a direction perpendicular to the stacking direction. A The second surface area (S) formed by the irregular shape formed at the interface relative to ) B The ratio of ) (S B / S A) may be 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5, but is not limited thereto. Through this, the radioactive source (120) and the N-type semiconductor (131) are in contact over a wide range, and as the surface area increases, the amount of electron-hole pairs formed per unit time increases, thus improving the efficiency of the radioactive battery (10). In another example, the first area (S A ) can be defined as the surface area of ​​an interface having a smooth shape (i.e., without non-uniform shape) between a radioactive source (120) and an N-type semiconductor (131) as shown in FIG. 4a. A second area (S B ) can be defined as the surface area of ​​an interface having a non-uniform shape between a radioactive source (120) and an N-type semiconductor (131) as shown in FIGS. 4b to 4e.

[0100] In a radioactive battery cell (100) according to one embodiment of the present application, an N-type semiconductor (131) and a P-type semiconductor (132) of an energy conversion layer (130) can be in contact with each other and can form an interface. In addition, since the N-type semiconductor (131) and the P-type semiconductor (132) are in contact over a wide range, and the amount of electron-hole pairs formed per unit time increases as the surface area increases, the efficiency of the radioactive battery (10) is improved.

[0101] In one example, the N-type semiconductor (131) and the P-type semiconductor (132) may define a boundary that extends perpendicularly to the direction in which the N-type semiconductor (131) and the P-type semiconductor (132) are spaced apart from each other. For example, if the N-type semiconductor (131) and the P-type semiconductor (132) are side by side in a cross-section of the radioactive cell (10) (e.g., D2-D3 plane), the boundary may be flat to form a parallel interface (see FIG. 5a). Alternatively, if the N-type semiconductor (131) and the P-type semiconductor (132) are concentric with respect to each other (e.g., a cylindrical radioactive cell (100)), the interface may extend at a fixed radius from the central axis of the radioactive cell (100). In another example, the N-type semiconductor (131) and the P-type semiconductor (132) may have various shapes of interfaces to increase the surface area in contact with each other. For example, a portion of the interface may be extended along a direction in which the N-type semiconductor (131) and the P-type semiconductor (132) are spaced apart from each other (e.g., the radial direction of the cylindrical radioactive cell (100)). Specifically, the interface may have an uneven shape such as a concave block shape (see FIG. 5b), a concave triangle shape (see FIG. 5c), a wave shape (see FIG. 5d), a stepped triangle (see FIG. 5e), or a sine wave shape (not shown), and the uneven shape may form a pattern. However, this is merely an example, and the shape of the interface is not particularly limited as long as the contact surface area is increased.

[0102] Referring to FIGS. 5b through 5e, in the stacking direction of the N-type semiconductor (131) and the P-type semiconductor (132), the distance between the low point and the high point of the uneven shape of the interface can be called the second height (h2). In one example, the stacking direction of the N-type semiconductor (131) and the P-type semiconductor (132) may be the second direction (D2) or the third direction (D3). In FIGS. 5b through 5e, the stacking direction of the N-type semiconductor (131) and the P-type semiconductor (132) may mean the third direction (D3). In one example, the second height (h2) may be 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the N-type semiconductor (131) or P-type semiconductor (132), but is not limited thereto. Here, the width of the N-type semiconductor (131) or P-type semiconductor (132) may mean the width in the second direction (D2) or the third direction (D3), for example, with reference to FIG. 3.

[0103] Referring to FIGS. 5b through 5e, in a direction perpendicular to the second height (h2) direction (e.g., third direction (D3)) of the uneven shape (e.g., second direction (D2)), the uneven shape may have a pattern having a second width (d2). The second width (d2) is 10 times the width of the N-type semiconductor (131) or P-type semiconductor (132). -5 % to 30%, 10 -4 % to 30%, 10 -3 % to 30% or 10 -2 It may be % to 30%, but is not limited thereto.

[0104] In one example, the third area (S) is the area when the interface between the N-type semiconductor (131) and the P-type semiconductor (132) is cut flat without irregularities in a direction perpendicular to the stacking direction. C The fourth surface area (S) formed by the irregular shape formed at the interface relative to ) D The ratio of ) (S D / SC ) may be 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5, but is not limited thereto. Through this, the N-type semiconductor (131) and the P-type semiconductor (132) are in contact over a wide range, and as the surface area increases, the amount of electron-hole pairs formed per unit time increases, thus having the effect of improving the efficiency of the radioactive battery (10). In another example, the third area (S C ) can be defined as the surface area of ​​an interface having a smooth shape (i.e., without non-uniform shape) between an N-type semiconductor (131) and a P-type semiconductor (132) as shown in FIG. 5a. The fourth area (S D ) can be defined as the surface area of ​​an interface having a non-uniform shape between an N-type semiconductor (131) and a P-type semiconductor (132) as shown in FIGS. 5b to 5e.

[0105] In a radioactive battery cell (100) according to one embodiment of the present application, the energy conversion layer (130) may include an intrinsic semiconductor between an N-type semiconductor (131) and a P-type semiconductor (132). By placing the intrinsic semiconductor between the N-type semiconductor (131) and the P-type semiconductor (132), the depletion region may be expanded. Additionally, the intrinsic semiconductor may come into contact with the N-type semiconductor (131) and the P-type semiconductor (132), and the interface between the intrinsic semiconductor and the N-type semiconductor (131) and the interface between the intrinsic semiconductor and the P-type semiconductor (132) may be formed so as to allow contact over a wide range as described above.

[0106] In one example, the uneven shape formed at the interface between the radioactive source (120) and the N-type semiconductor (131) and at the interface between the N-type semiconductor (131) and the P-type semiconductor (132) can be implemented by forming a microstructure using an etching process such as printing using a CLICHE, wet etch, or dry etch, or by utilizing a lithography method. The CLICHE may be a metal plate having an uneven surface. Specifically, for example, the uneven shape can be manufactured by wet etching when the first height (h1), the first width (d1), the second height (h2), and the second width (d2) are 1 μm or more and less than 1,000 μm. In addition, specifically, for example, when the first height (h1), first width (d1), second height (h2) and second width (d2) are 1 nm or more and less than 1,000 nm, an uneven shape can be manufactured by dry etching.

[0107] FIG. 6 is a plan view illustrating at least a portion of a radioactive battery cell (100) according to one embodiment of the present application. FIG. 7 is a plan view illustrating at least a portion of a radioactive battery cell (100) according to one embodiment of the present application.

[0108] In one example, referring to FIG. 6, the radioactive battery cell (100) may include a hole transfer layer (HTL, 140) between the first electrode (111) and the P-type semiconductor (132). Also, in one example, referring to FIG. 7, the radioactive battery cell (100) may include an electron transfer layer (ETL, 150) between the second electrode (112) and the radioactive source (120). Meanwhile, although not shown in the drawings, the radioactive battery cell (100) may include an electron transfer layer (150) without including the hole transfer layer (140). The hole transfer layer (140) or the electron transfer layer (150) may aid in the transfer of holes or electrons. Meanwhile, the first electrode (111) may be a cathode and the second electrode (112) may be an anode.

[0109] In one example, the hole transport layer (140) may include a material used in hole transport layers in the field of perovskite solar cells or organic light-emitting diodes (OLEDs). For example, the hole transport layer (140) may include PEDOT:PSS (poly(3,4-ethylenedioxythiophene), NiO x(where x is greater than 0 and less than 1 or greater than 0 and less than or equal to 0.3), Spiro-OMeTAD(2,2′,7,7′-Tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene), N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB or NPD)), 4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine(4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA)), It may include one or more of N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD)) and PTAA (poly(triarylamine)), but is not limited thereto.

[0110] In one example, the electron transport layer (150) may include a material used in electron transport layers in the field of perovskite solar cells or organic light-emitting diodes (OLEDs). For example, the electron transport layer (150) may include one or more of titanium dioxide, tin oxide, zinc oxide, Alq₃ (Tris(8-hydroxyquinolinato)aluminum), BPhen (4,7-Diphenyl-1,10-phenanthroline), TPBi (2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), TmPyPB (1,3,5-Tri(m-pyrid-3-yl-phenyl)benzene) and fullerenes and their derivatives (e.g., PCBM), but is not limited thereto.

[0111] FIG. 8 is a plan view showing at least a portion of a radioactive battery cell (100) according to one embodiment of the present application.

[0112] In one example, the radioactive cell (100) may include a dielectric layer (115) that surrounds at least a portion of the first electrode (111). In other words, the radioactive cell (100) may include a dielectric layer (115) disposed on one side of the first electrode (111) with respect to the direction in which the first electrode (111) and other components of the radioactive cell (100) are spaced apart. For example, the dielectric layer (115) may be disposed in an inner concentric circle of the first electrode (111) within a cross-section (e.g., D2-D3 plane), as illustrated in FIG. 8.

[0113] In one example, the dielectric layer (115) may include a dielectric. In one example, the dielectric is not particularly limited as long as it is used in the art. The dielectric layer (115) can optimize the placement of the radiation source (120) and further improve electrical stability by minimizing the occurrence of leakage current.

[0114] In one example, the dielectric layer (115) may include a low dielectric with a dielectric constant of less than 3.9. Low dielectrics are not specifically limited as long as they are used in the industry, but include Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethylEycloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), TriMethylSilylBorate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilylPosphate (TMSP), PolyTetraFluoroEthylene (PTFE), TOSZ (Tonen SilaZen), FSG (Fluoride Silicate Glass), polyimide nanofoams such as polypropylene oxide, CDO (Carbon Doped Silicon Oxide), OSG (Organo Silicate Glass), SiLK, Amorphous Fluorinated Carbon, silica aerogels, and silica It may include one or more materials from the group consisting of xerogels and mesoporous silica. If the dielectric layer (115) includes a low dielectric, it is possible to efficiently transfer radiation generated from, for example, a radiation source (120) to the energy conversion layer (130) while minimizing the occurrence of leakage current.

[0115] In one example, the dielectric layer (115) may include a high dielectric with a dielectric constant of 3.9 or higher. High dielectrics are not particularly limited as long as they are used in the art, but may include one or more from the group consisting of, for example, boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate. If the dielectric layer (115) includes a high dielectric material, the radioactive battery (10) can be designed to have a high integration density while minimizing the occurrence of leakage current.

[0116] FIG. 9 is a plan view showing at least a portion of a radioactive battery cell (100) according to one embodiment of the present application. FIG. 10 is a perspective view showing a portion of radioactive battery cells (100A, 100B) adjacent to each other in a radioactive battery (10) according to one embodiment of the present application.

[0117] In a radioactive battery cell (100) according to one embodiment of the present application, at least one of the first electrode (111) and the second electrode (112) may include a through hole (111H, 112H) formed along a first direction (D1) perpendicular to the upper surface (110US) of the electrode (110). The through hole (111H, 112H) may penetrate the first electrode (111) and the second electrode (112) respectively along the first direction (D1). The first electrode (111) may include a through hole (111H) formed along the first direction (D1). The second electrode (112) may include a through hole (112H) formed along the first direction (D1). Both the first electrode (111) and the second electrode (112) may have through holes (111H, 112H) formed therein.

[0118] In one example, the through holes (111H, 112H) may be manufactured, for example, by a physical penetration method (e.g., using a tool such as a drill), wet etching, dry etching, or a photolithography process, but are not limited thereto.

[0119] In one example, the connector (200) may include an area disposed in at least a portion of the through holes (111H, 112H). That is, at least a portion of the connector (200) may be disposed in the through holes (111H, 112H). In one example, the connector (200) disposed in at least a portion of the through holes (111H, 112H) may be manufactured by applying a paste containing a conductive material or by printing. Meanwhile, the connector (200) may include an area not disposed in at least a portion of the through holes (111H, 112H), which may be embedded in the insulating layer (300).

[0120] In one example, the first connector (210) may include an area disposed in at least a portion of the through hole (111H) formed in the first electrode (111). The second connector (220) may include an area disposed in at least a portion of the through hole (112H) formed in the second electrode (112).

[0121] In one example, a through hole (111HA) may be formed in the first-1 electrode (111A) of the first radioactive battery cell (100A), and a through hole (112HA) may also be formed in the first-2 electrode (112A). Additionally, a through hole (111HB) may be formed in the second-1 electrode (111B) of the second radioactive battery cell (100B), and a through hole (112HB) ​​may also be formed in the second-2 electrode (112B).

[0122] In one example, the first connector (210) may include an area disposed in at least a portion of each of the through hole (111HA) formed in the first-1 electrode (111A) and the through hole (111HB) formed in the second-1 electrode (111B). The second connector (220) may include an area disposed in at least a portion of each of the through hole (112HA) formed in the first-2 electrode (112A) and the through hole (112HB) ​​formed in the second-2 electrode (112B).

[0123] FIG. 11 is a plan view showing at least a portion of a radioactive battery cell (100) according to one embodiment of the present application. FIG. 12 is a perspective view showing at least a portion of a radioactive battery cell (100) according to one embodiment of the present application. FIG. 11 and FIG. 12 are embodiments in which the shape of the radioactive source (120) is different, and for descriptions regarding other configurations, reference may be made to the foregoing unless there is a contradiction.

[0124] In a radioactive battery (10) according to one embodiment of the present application, the radioactive battery cell (100) may include an electrode (110) comprising a first electrode (111) and a second electrode (112). Additionally, the radioactive battery cell (100) may include an energy conversion layer (130) disposed between the first electrode (111) and the second electrode (112). Additionally, the radioactive battery cell (100) may include a radiation source (120) disposed on at least one of the first electrode (111) and the second electrode (112).

[0125] Referring to FIG. 11, the radioactive source (120) may be placed on the second electrode (112). Although not shown in the drawing, the radioactive source (120) may be placed on the first electrode (111) instead of the second electrode (112). As will be described later, referring to FIG. 16, the radioactive source (120) may be placed independently on the first electrode (111) and the second electrode (112), respectively.

[0126] In one example, at least some of the plurality of radioactive cell cells (100) may have a radioactive source (120) that does not penetrate the first electrode (111) or the second electrode (112) along the first direction (D1). Additionally, the radioactive source (120) may have a radioactive source (120) that does not penetrate the first electrode (111) and the second electrode (112) along a cross-section (i.e., the D2-D3 plane in the arrangement of FIG. 11) where the first electrode (111) and the second electrode (112) are spaced apart from each other. That is, the radioactive source (120) may be embedded in the first electrode (111) or the second electrode (112) along the direction in which the first electrode (111) or the second electrode (112) are spaced apart from each other, and the radioactive source (120) may be provided as individual parts spaced apart from each other along the transverse direction in which the first electrode (111) or the second electrode (112) are spaced apart from each other. For example, in the cylindrical radioactive cell (100) shown in FIG. 11, when the first electrode (111) and the second electrode (112) are spaced apart from each other in the radiative direction, individual parts of the radioactive source (120) may be spaced apart from each other along the circumferential direction while partially penetrating the second electrode (112) along the radiative direction.

[0127] In one example, the energy conversion layer (130) may come into contact with at least a portion of the radiation source (120), at least a portion of the first electrode (111), and at least a portion of the second electrode (112). Through this, electrons among the electron-hole pairs formed in the energy conversion layer (130) may move directly along the contacted second electrode (112).

[0128] In one example, the first electrode (111) may be a cathode and the second electrode (112) may be an anode. Here, a radiation source (120) may be placed while embedded in the second electrode (112). This allows the radiation source (120) to provide radiation, etc. more efficiently to the energy conversion layer (130).

[0129] In one example, at least some of the plurality of radioactive battery cells (100) may include an energy conversion layer (130) comprising an N-type semiconductor (131) and a P-type semiconductor (132) as described above. Here, the N-type semiconductor (131) may surround at least a portion of the P-type semiconductor (132). Additionally, the P-type semiconductor (132) may surround at least a portion of the first electrode (111). Here, the first electrode (111) may be a cathode and the second electrode (112) may be an anode. Additionally, here, a radiation source (120) may be placed on the second electrode (112) and may be embedded in the second electrode (112). That is, the radiation source (120) can not penetrate the second electrode (112) along a cross-section (i.e., plane D2-D3 in FIG. 11) where the first electrode (111) and the second electrode (112) are spaced apart from each other.

[0130] In one example, at least some of the plurality of radioactive cell cells (100) may have an extended shape (ES) in which the radiation source (120) extends away from the energy conversion layer (130) when viewed from a first direction (D1) perpendicular to the upper surface (110US) of the electrode. Here, the direction away from the energy conversion layer (130) may include both a radiation direction toward the outside of the radioactive cell (10) and a radiation direction toward the center of the radioactive cell (10), with reference to FIG. 11.

[0131] In one example, there may be multiple extension shapes (ES). Multiple extension shapes (ES) may not overlap each other when viewed from the first direction (D1). This structure can minimize the amount of isotopes contained in the radioactive source (120).

[0132] In one example, a plurality of extension shapes (ES) may have a specific arrangement. For example, the plurality of extension shapes (ES) may be arranged such that they are substantially equal in distance from the center of the radioactive cell (10). Additionally, for example, the plurality of extension shapes (ES) may be arranged such that they have a symmetrical structure with respect to a specific axis passing through the center of the radioactive cell (10) when viewed from the first direction (D1). However, this is merely an example and is not particularly limited thereto.

[0133] In one example, the shape of the extension shape (ES) is not particularly limited, but the width of the extension shape (ES) may decrease as it moves away from the energy conversion layer (130). Referring to FIG. 11, the width of the extension shape (ES) may gradually decrease as it moves away from the energy conversion layer (130). Additionally, at least a portion of the end of the extension shape (ES) may be round, but is not particularly limited thereto. FIG. 13 briefly illustrates the structure of a power device (1) according to one embodiment of the present application.

[0134] A radioactive battery (10) according to one embodiment of the present application may include a shielding member (15) containing a plurality of radioactive battery cells (100) and a connector (200).

[0135] The shielding member (15) may include a material capable of shielding or reflecting radiation. For example, the aforementioned radioactivity may be emitted from a radioactive source (120) (e.g., alpha, beta, and / or gamma rays). For example, the shielding member (15) may include one or more of metal materials such as copper, silver, and aluminum, and polymer materials such as polyolefin, polyester, and poly(meta)acrylate. Polyolefin may include one or more of polyethylene, polypropylene, and ethylene-propylene copolymer, for example, though not particularly limited. Polyester may include polyethylene terephthalate, for example, though not particularly limited. Poly(meth)acrylate may include, for example, ethylene-(meth)acrylate copolymer, although not specifically limited. The shielding member (15) may include one or more of lead (Pb) and concrete, for example, if a radioactive source (120) contains a gamma-emitting isotope.

[0136] The shielding member (15) can minimize electromagnetic interference, the occurrence of parasitic circuits, or power loss caused by the operation of a plurality of radioactive battery cells (100) and a connector (200).

[0137] A power device (1) according to one embodiment of the present application may include a load (30) electrically connected to a radioactive battery (10) through a wire line (20). Meanwhile, the wire line (20) may include a first wire line (21) electrically connected to a first connector (210) and a second wire line (22) electrically connected to a second connector (220).

[0138] In one example, the first wire line (21) can pass through the shielding member (15) and be electrically connected to a rod (30) placed outside the radioactive battery (10). Additionally, the second wire line (22) can pass through the shielding member (15) and be electrically connected to a rod (30) placed outside the radioactive battery (10).

[0139] In one example, the power device (1) may include an energy storage device (40) electrically connected to a radioactive battery (10) via a power line (20). The energy storage device (40) is not particularly limited as long as it is capable of storing power, and may be, for example, a capacitor or a backup power device for an uninterruptible power supply system.

[0140] In one example, the power device (1) may include a switching device (50) that connects a wire line (20) to a load (30) or an energy storage device (40). The switching device (50) may connect the wire line (20) to the load (30) or to the energy storage device (40) according to an electrical signal. In one example, the switching device (50) may be a device device including a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure.

[0141] In one example, when the wire line (20) is connected to the load (30) through the switching device (50), the electrical connection between the radioactive battery (10) and the energy storage device (40) may be cut off. Additionally, when the wire line (20) is connected to the energy storage device (40) through the switching device (50), the electrical connection between the radioactive battery (10) and the load (30) may be cut off. Through this, the power flow of the radioactive battery (10) that continuously generates power can be controlled.

[0142] FIGS. 14 to 16 are plan views illustrating at least a portion of a radioactive battery cell (100) according to one embodiment of the present application. The description of FIGS. 14 to 16 may be referenced to the description of FIGS. 1 to 13 unless contradictory.

[0143] Referring to FIG. 14, in a radioactive battery (10) according to one embodiment of the present application, at least some of the plurality of radioactive battery cells (100) may have a radioactive source (120) surrounding at least a portion of the first electrode (111). Additionally, an energy conversion layer (130) may surround at least a portion of the radioactive source (120). Additionally, a second electrode (112) may surround at least a portion of the energy conversion layer (130). This structure may be advantageous for minimizing the amount of isotopes contained in the radioactive source (120) and maximizing the efficiency of the radioactive battery (10).

[0144] In one example, the radiation source (120) may surround the side of the first electrode (111). Additionally, the energy conversion layer (130) may surround the side of the radiation source (120). Additionally, the second electrode (112) may surround the side of the energy conversion layer (130).

[0145] In one example, the radiation source (120) may come into contact with at least a portion of the first electrode (111). Additionally, the energy conversion layer (130) may come into contact with at least a portion of the radiation source (120). Additionally, the second electrode (112) may come into contact with at least a portion of the energy conversion layer (130).

[0146] Referring to FIG. 15, in a radioactive battery (10) according to one embodiment of the present application, at least some of the plurality of radioactive battery cells (100) may have an energy conversion layer (130) comprising a first energy conversion layer (130-1) and a second energy conversion layer (130-2). In one example, a radioactive source (120) may surround at least a portion of the first energy conversion layer (130-1). Additionally, the second energy conversion layer (130-2) may surround at least a portion of the radioactive source (120). Additionally, the first energy conversion layer (130-1) may surround at least a portion of the first electrode (111). Additionally, the second electrode (112) may surround at least a portion of the second energy conversion layer (130-2).

[0147] In one example, the radiation source (120) may surround the side of the first energy conversion layer (130-1). Additionally, the second energy conversion layer (130-2) may surround the side of the radiation source (120). Additionally, the first energy conversion layer (130-1) may surround the side of the first electrode (111). Additionally, the second electrode (112) may surround the side of the second energy conversion layer (130-2). This structure can increase the surface area of ​​the interface between the radiation source (120) and the energy conversion layer (130) and the interface within the energy conversion layer (130), thereby increasing the amount of electron-hole pairs formed per unit time.

[0148] In one example, the radiation source (120) may come into contact with at least a portion of the first energy conversion layer (130-1). Additionally, the second energy conversion layer (130-2) may come into contact with at least a portion of the radiation source (120). Additionally, the first energy conversion layer (130-1) may come into contact with at least a portion of the first electrode (111). Additionally, the second electrode (112) may come into contact with at least a portion of the second energy conversion layer (130-2).

[0149] In one example, the first energy conversion layer (130-1) may include a first N-type semiconductor (131-1) and a first P-type semiconductor (132-1). The second energy conversion layer (130-2) may include a second N-type semiconductor (131-2) and a second P-type semiconductor (132-2). The first N-type semiconductor (131-1) and the second N-type semiconductor (131-2) may refer to the description of the N-type semiconductor (131) described above, and the first P-type semiconductor (132-1) and the second P-type semiconductor (132-2) may refer to the description of the P-type semiconductor (132) described above.

[0150] Referring to FIG. 16, in a radioactive battery (10) according to one embodiment of the present application, at least some of the plurality of radioactive battery cells (100) may include a radioactive source (120) which is disposed on a first electrode (111) and a second radioactive source (120-2) which is disposed on a second electrode (112).

[0151] In one example, the first radiation source (120-1) may have a first extension shape (ES-1) that extends away from the energy conversion layer (130) when viewed from a first direction (D1) perpendicular to the upper surface (110US) of the electrode. The second radiation source (120-2) may have a second extension shape (ES-2) that extends away from the energy conversion layer (130) when viewed from a first direction (D1) perpendicular to the upper surface (110US) of the electrode. Here, the direction away from the energy conversion layer (130) may include both a radiation direction directed outward from the energy conversion layer (130) and a radiation direction directed toward the center of the radiation cell (10) with reference to the energy conversion layer (130), as shown in FIG. 16.

[0152] In one example, the first extension shape (ES-1) may extend in a direction toward the center of the radioactive cell (10). The second extension shape (ES-2) may extend in a direction toward the outside of the radioactive cell (10).

[0153] In one example, the first radiation source (120-1) and the second radiation source (120-2) may not overlap with each other based on the radiation direction extending outward from the center of the radioactive cell (10). Meanwhile, in one example, the first radiation source (120-1) may be located at a different angle point with respect to the central axis of the second radiation source (120-2). Accordingly, a radius line passing through each discrete location of the first radiation source (120-1) may not pass through any discrete location of the second radiation source (120-2). In one example, as shown in FIG. 16, a radius line passing through each discrete location of the first radiation source (120-1) may be located at the midpoint of the angle between adjacent second radiation sources (120-2). Through this, the radioactive source (120) can be space-efficiently arranged to minimize the amount of isotopes contained in the radioactive source (120) while minimizing the shaded area where radiation does not reach the interface within the energy conversion layer (130), thereby improving the efficiency of the radioactive battery (10).

[0154] In one example, the first extension shape (ES-1) and the second extension shape (ES-2) may each be independently multiple. Multiple first extension shapes (ES-1) may not overlap each other when viewed from the first direction (D1). Multiple second extension shapes (ES-2) may not overlap each other when viewed from the first direction (D1). This structure can minimize the amount of isotopes contained in the radioactive source (120).

[0155] In one example, the first extension shape (ES-1) and the second extension shape (ES-2) may each independently have a specific arrangement. The specific arrangement may refer, for example, to the extension shape (ES) described in FIG. 11. In one example, the width of the first extension shape (ES-1) and the second extension shape (ES-2) may each independently decrease as they move away from the energy conversion layer (130). Additionally, at least a portion of the end of the first extension shape (ES-1) and the second extension shape (ES-2) may each independently be rounded, but is not limited thereto.

[0156] Although various embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with average knowledge in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Furthermore, the above-described embodiments may be implemented by deleting some components, and each embodiment may be implemented in combination with one another.

[0157] [Explanation of the symbol]

[0158] 1... power device

[0159] 10... radioactive battery

[0160] 100... radioactive battery cell

[0161] 110... electrode

[0162] 120... radioactive source

[0163] 130... energy conversion layer

[0164] 200... connector

[0165] 300... insulation layer

[0166] [Representative also]

[0167] Fig. 1

Claims

1. A plurality of radioactive battery cells comprising an electrode including a first electrode and a second electrode, a radioactive source disposed between the first electrode and the second electrode, and an energy conversion layer disposed between the first electrode and the second electrode, which does not overlap with the radioactive source when viewed from a first direction perpendicular to the upper surface of the electrode; and A radioactive battery comprising a connector disposed in at least some of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells, electrically connecting each of the electrodes of the adjacent radioactive battery cells to each other.

2. In Paragraph 1, A radioactive battery comprising a first connector that electrically connects each first electrode of the adjacent radioactive battery cell and a second connector that electrically connects each second electrode of the adjacent radioactive battery cell.

3. In Paragraph 1, It further includes an insulating layer disposed in at least some of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells, and The above connector is a radioactive battery penetrating the insulating layer.

4. In Paragraph 1, A radioactive battery in which at least some of the plurality of radioactive battery cells have an energy conversion layer surrounding at least a portion of the first electrode, a radioactive source surrounding at least a portion of the energy conversion layer, and a second electrode surrounding at least a portion of the radioactive source.

5. In Paragraph 4, A radioactive cell comprising an energy conversion layer including an N-type semiconductor and a P-type semiconductor, wherein the N-type semiconductor surrounds at least a portion of the P-type semiconductor, and the P-type semiconductor surrounds at least a portion of the first electrode.

6. In Paragraph 5, The above-described radioactive battery cell further comprises a hole transport layer disposed between the first electrode and the P-type semiconductor.

7. In Paragraph 1, At least some of the plurality of radioactive battery cells are radioactive batteries in which the energy conversion layer is in contact with at least some of the radioactive source.

8. In Paragraph 1, At least some of the plurality of radioactive battery cells include a through hole formed in which at least one of the first electrode and the second electrode is penetrated along a first direction perpendicular to the upper surface of the electrode, and The above connector is a radioactive cell comprising an area disposed in at least a portion of the through hole.

9. In Paragraph 1, At least some of the plurality of radioactive battery cells further include a dielectric layer in which at least some of the first electrode surrounds, Radioactive battery.

10. In Paragraph 1, A radioactive battery further comprising a plurality of radioactive battery cells and a shielding member containing the connector.

11. In Paragraph 1, A radioactive battery in which at least some of the plurality of radioactive battery cells have a radioactive source surrounding at least a portion of the first electrode, an energy conversion layer surrounding at least a portion of the radioactive source, and a second electrode surrounding at least a portion of the energy conversion layer.

12. In Paragraph 1, A radioactive battery in which at least some of the plurality of radioactive battery cells have an energy conversion layer comprising a first energy conversion layer and a second energy conversion layer, and the radioactive source surrounds at least a portion of the first energy conversion layer, and the second energy conversion layer surrounds at least a portion of the radioactive source.

13. A plurality of radioactive battery cells comprising an electrode including a first electrode and a second electrode, an energy conversion layer disposed between the first electrode and the second electrode, and a radioactive source disposed on at least one of the first electrode and the second electrode; and A radioactive battery comprising a connector disposed in at least some of the gaps existing between any adjacent radioactive battery cells of the plurality of radioactive battery cells, electrically connecting each of the electrodes of the adjacent radioactive battery cells to each other.

14. In Paragraph 13, A radioactive battery in which at least some of the plurality of radioactive battery cells have a radioactive source that does not penetrate the first electrode or the second electrode in a first direction perpendicular to the upper surface of the electrode.

15. In Paragraph 13, A radioactive battery in which at least some of the plurality of radioactive battery cells have an energy conversion layer in contact with at least some of the radioactive source, at least some of the first electrode, and at least some of the second electrode.

16. In Paragraph 15, At least some of the plurality of radioactive battery cells above have an energy conversion layer comprising an N-type semiconductor and a P-type semiconductor, wherein the N-type semiconductor surrounds at least a portion of the P-type semiconductor, and the P-type semiconductor surrounds at least a portion of the first electrode. A radioactive cell in which the above-mentioned radioactive source is disposed on the second electrode, but does not penetrate the second electrode along a first direction perpendicular to the upper surface of the electrode.

17. In Paragraph 13, A radioactive battery having at least some of the plurality of radioactive battery cells having an extended shape in which the radioactive source extends away from the energy conversion layer when viewed from a first direction perpendicular to the upper surface of the electrode.

18. In Paragraph 17, The above extension shape is one of a plurality of extension shapes, and The above plurality of extended shapes are radioactive cells that do not overlap each other when viewed from the first direction.

19. In Paragraph 17, At least some of the plurality of radioactive battery cells include a first radioactive source disposed at the first electrode and a second radioactive source disposed at the second electrode, wherein the radioactive source comprises a first radioactive source disposed at the first electrode and a second radioactive source disposed at the second electrode. A radioactive battery in which the first radioactive source and the second radioactive source do not overlap with each other, based on the radiation direction extending outward from the center of the radioactive battery.

20. A power device comprising a radioactive battery and a load electrically connected to the radioactive battery through a wire line, The above-mentioned radioactive battery is, A plurality of radioactive cell components comprising an electrode including a first electrode and a second electrode, a radioactive source disposed between the first electrode and the second electrode, and an energy conversion layer disposed between the first electrode and the second electrode but not overlapping with the radioactive source when viewed from a first direction perpendicular to the upper surface of the electrode, and a connector disposed in at least some of the gaps existing between any adjacent radioactive cell components of the plurality of radioactive cell components to electrically connect each of the electrode components of the adjacent radioactive cell components. The above connector includes a first connector that electrically connects each first electrode of the adjacent radioactive battery cell and a second connector that electrically connects each second electrode of the adjacent radioactive battery cell. The above wire line includes a first wire line electrically connected to the first connector and a second wire line electrically connected to the second connector, and The above load is a power device arranged to be electrically connected to the above first wire line and the above second wire line.

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