Radioactive battery and power device

Abstract

The present application may provide a radioactive battery comprising: a plurality of radioactive battery cells stacked in a stacking direction, which is one direction, each of the plurality of radioactive battery cells including an electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, a radiation source, and an energy conversion layer surrounding at least a portion of the radiation source and disposed between the electrode layer and the radiation source; and connectors disposed in at least some of gaps present between any adjacent radioactive battery cells among the plurality of radioactive battery cells to electrically connect the respective electrode layers of the adjacent radioactive battery cells to each other.

Description

Radioactive batteries and power devices

[0001] Cross-citation with related applications

[0002] This application is based on Korean Patent Applications No. 10-2024-0129031 and No. 10-2025-0137227, which were filed with the Korean Intellectual Property Office on September 24, 2024 and September 23, 2025, respectively, and whose contents are incorporated in whole into this application by reference herein, and claims priority thereof.

[0003] Technology field

[0004] The present application relates to a radioactive battery and a power device including the radioactive battery.

[0005] A radioisotope is an element that decays into a stable isotope while emitting radiation. Known modes of radioisotope decay include alpha decay, beta decay, and gamma decay. Depending on the type of radioisotope, it emits alpha, beta, or gamma rays as it decays. Meanwhile, the time it takes for a radioisotope to decay and reduce its radioactivity to half of its initial level is called the half-life. The type of radiation emitted during decay and the half-life are determined by the type of radioisotope.

[0006] A radioactive battery is a battery designed to convert the nuclear fission energy of radioactive isotopes into electrical energy for use as an electrical power source.

[0007] For example, a betavoltaic cell is a battery that uses beta rays, which are radiation emitted from a radioactive isotope. The beta rays are absorbed by a semiconductor with a PN junction to form electron-hole pairs from the depletion layer, and the formed electrons and holes can be used as an electrical power source.

[0008] The present application aims to provide a radioactive battery and a power device that can be applied to electronic products requiring high power by producing high-density power.

[0009] A radioactive battery according to one embodiment of the present application may include an electrode layer comprising a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, a radioactive source, and an energy conversion layer disposed between the electrode layer and the radioactive source and surrounding at least a portion of the radioactive source, and may include a plurality of radioactive battery cells stacked in a stacking direction in one direction, and a connector disposed in at least a portion of the gaps existing between any adjacent radioactive battery cells among the plurality of radioactive battery cells to electrically connect each electrode layer of the adjacent radioactive battery cells to each other.

[0010] In a radioactive battery according to one embodiment of the present application, the electrode layer may surround at least a portion of the energy conversion layer.

[0011] In a radioactive battery according to one embodiment of the present application, the energy conversion layer comprises a first type semiconductor and a second type semiconductor, the first electrode surrounds at least a portion of the first type semiconductor, and the second electrode can surround at least a portion of the second type semiconductor.

[0012] In a radioactive battery according to one embodiment of the present application, the electrode insulating layer may surround at least a portion of the boundary between the first type semiconductor and the second type semiconductor.

[0013] In a radioactive battery according to one embodiment of the present application, a first type semiconductor surrounds at least a portion of a radioactive source, and a second type semiconductor can surround a portion of the first type semiconductor.

[0014] In a radioactive battery according to one embodiment of the present application, the energy conversion layer comprises a first energy conversion layer and a second energy conversion layer, each comprising a first type semiconductor and a second type semiconductor, and the first energy conversion layer surrounds at least a portion of a radioactive source, and the second energy conversion layer can surround at least a portion of the first energy conversion layer.

[0015] In a radioactive battery according to one embodiment of the present application, a first type semiconductor of the second energy conversion layer surrounds at least a portion of a second type semiconductor of the first energy conversion layer, and the second type semiconductor of the second energy conversion layer can surround at least a portion of a first type semiconductor of the first energy conversion layer.

[0016] A radioactive battery according to one embodiment of the present application may further include a dielectric layer in which at least some of the plurality of radioactive battery cells surround at least some of the radioactive sources.

[0017] In a radioactive battery according to one embodiment of the present application, the connectors are a plurality of, some of the connectors electrically connect a first electrode of one adjacent radioactive battery cell to another second electrode, and other parts of the connectors electrically connect a second electrode of one adjacent radioactive battery cell to another first electrode.

[0018] In a radioactive battery according to one embodiment of the present application, the connectors are a plurality of, some of the connectors electrically connect a first electrode of one adjacent radioactive battery cell to another first electrode, and other parts of the connectors electrically connect a second electrode of one adjacent radioactive battery cell to another second electrode.

[0019] A radioactive battery according to one embodiment of the present application further comprises an insulating layer disposed in at least some of the gaps existing between adjacent radioactive battery cells, and a radioactive source may be disposed penetrating the insulating layer in the stacking direction.

[0020] In a radioactive battery according to one embodiment of the present application, a connector may be disposed by penetrating an insulating layer with respect to the stacking direction.

[0021] In a radioactive battery according to one embodiment of the present application, the insulating layer may further include a dielectric layer surrounding at least a portion of a radioactive source disposed in the insulating layer.

[0022] In a radioactive battery according to one embodiment of the present application, the insulating layer may further include a semiconductor layer surrounding at least a portion of a radioactive source disposed in the insulating layer.

[0023] In a radioactive battery according to one embodiment of the present application, the semiconductor layer is exposed from the insulating layer with respect to the stacking direction and can come into contact with each energy conversion layer of an adjacent radioactive battery cell.

[0024] In a radioactive battery according to one embodiment of the present application, the semiconductor layer comprises a type A semiconductor and a type B semiconductor, the type A semiconductor surrounds at least a portion of a radioactive source disposed in an insulating layer, and the type B semiconductor can surround at least a portion of the type A semiconductor.

[0025] In a radioactive battery according to one embodiment of the present application, the semiconductor layer comprises a first semiconductor layer and a second semiconductor layer, each comprising a type A semiconductor and a type B semiconductor, and the first semiconductor layer surrounds at least a portion of a radioactive source disposed in an insulating layer, and the second semiconductor layer can surround at least a portion of the first semiconductor layer.

[0026] In a radioactive battery according to one embodiment of the present application, a type A semiconductor of the second semiconductor layer surrounds at least a portion of a type B semiconductor layer of the first semiconductor layer, and a type B semiconductor of the second semiconductor layer can surround at least a portion of a type A semiconductor layer of the first semiconductor layer.

[0027] In a radioactive battery according to one embodiment of the present application, the energy conversion layer comprises a first energy conversion layer and a second energy conversion layer, each comprising a first type semiconductor and a second type semiconductor, wherein the first energy conversion layer surrounds at least a portion of a radioactive source, the second energy conversion layer surrounds at least a portion of the first energy conversion layer, the first semiconductor layer contacts the first energy conversion layer in at least a portion of the stacking direction, and the second semiconductor layer contacts the second energy conversion layer in at least a portion of the stacking direction.

[0028] In a radioactive battery according to one embodiment of the present application, a first type semiconductor of the second energy conversion layer surrounds at least a portion of a second type semiconductor of the first energy conversion layer, and a second type semiconductor of the second energy conversion layer surrounds at least a portion of a first type semiconductor of the first energy conversion layer, and each of the first type semiconductor and the second type semiconductor of the first semiconductor layer is in contact with at least a portion of the first type semiconductor and the second type semiconductor of the first energy conversion layer, and each of the first type semiconductor and the second type semiconductor of the second semiconductor layer can be in contact with at least a portion of the first type semiconductor and the second type semiconductor of the second energy conversion layer.

[0029] In a radioactive battery according to one embodiment of the present application, a type A semiconductor of the first semiconductor layer has a type different from a type 1 semiconductor of the first energy conversion layer, a type B semiconductor of the first semiconductor layer has a type different from a type 2 semiconductor of the first energy conversion layer, a type A semiconductor of the second semiconductor layer has a type different from a type 1 semiconductor of the second energy conversion layer, and a type B semiconductor of the second semiconductor layer may have a type different from a type 2 semiconductor of the second energy conversion layer.

[0030] A radioactive battery according to one embodiment of the present application may include an electrode layer comprising a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, a radioactive source, and an energy conversion layer disposed between the electrode layer and the radioactive source surrounding at least a portion of the radioactive source, and a plurality of radioactive battery cells stacked in a stacking direction in one direction, an insulating layer disposed in at least a portion of the gaps existing between any adjacent radioactive battery cells among the plurality of radioactive battery cells and disposed at a position corresponding to each electrode layer of the adjacent radioactive battery cells, a first connecting part electrically connecting each first electrode of the adjacent radioactive battery cells, and a second connecting part electrically connecting each second electrode of the adjacent radioactive battery cells.

[0031] The present application can provide a radioactive battery and a power device that can be applied to electronic products requiring high power by producing high-density power.

[0032] The drawings shown in this application are in accordance with embodiments of this application, and the ratios of the width, height, or thickness (or height) of each component are intended to explain this application in detail and may differ from the actual. Additionally, in the coordinate system shown in the drawings, each axis may be perpendicular to the others, the direction indicated by the arrow may be the + direction, and the direction exactly opposite to the direction indicated by the arrow (a direction rotated 180 degrees) may be the - direction.

[0033] FIG. 1 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0034] FIG. 2 is a plan view illustrating at least a portion of a radioactive battery cell of a radioactive battery according to one embodiment of the present application.

[0035] FIG. 3 is a perspective view illustrating at least a portion of a radioactive battery cell of a radioactive battery according to one embodiment of the present application.

[0036] FIG. 4 is a plan view illustrating at least a portion of a radioactive battery cell of a radioactive battery according to one embodiment of the present application.

[0037] FIG. 5 is a plan view illustrating at least a portion of a radioactive battery cell of a radioactive battery according to one embodiment of the present application.

[0038] FIG. 6 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0039] FIG. 7 is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to one embodiment of the present application.

[0040] FIG. 8 is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to one embodiment of the present application.

[0041] FIG. 9 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0042] FIG. 10 is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to one embodiment of the present application.

[0043] FIG. 11 is a plan view illustrating at least a portion of the insulating layer of a radioactive battery according to one embodiment of the present application.

[0044] FIG. 12 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0045] FIG. 13 is a perspective view illustrating at least a portion of a radioactive battery according to one embodiment of the present application.

[0046] Prior to the detailed description of this application, terms and words used in this specification and claims may not be interpreted as being limited to their ordinary or dictionary meanings. Furthermore, based on the principle that the inventor may appropriately define the concept of terms to best describe their invention, they may be interpreted in a meaning and concept consistent with the technical spirit of the invention. The embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of this application and may not represent all of the technical spirit of this application. Therefore, various equivalents and modifications that can replace them may exist at the time of filing this application.

[0047] Identical reference numbers or symbols in each drawing attached to this specification may represent parts or components that perform substantially the same function. For convenience of explanation and understanding, the same reference numbers or symbols may be used to describe different embodiments. That is, even if components having the same reference number are depicted in multiple drawings, the multiple drawings may not all represent a single embodiment.

[0048] In the following description, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "comprising" or "constituting" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0049] Additionally, in the following description, expressions such as upper side, top, lower side, bottom, side, front, and rear are based on the direction depicted in the drawing, and may be expressed differently if the direction of the object changes.

[0050] Additionally, in this specification and claims, terms including ordinal numbers, such as "first," "second," etc., may be used to distinguish between components. Such ordinal numbers are used to distinguish identical or similar components from one another, and the meaning of the terms should not be limited by the use of such ordinal numbers. For example, the order of use or arrangement of components combined with such ordinal numbers should not be limited by the number. If necessary, each ordinal number may be used interchangeably.

[0051] Hereinafter, embodiments of the present application will be described in detail with reference to the attached drawings. However, the scope of the present application is not limited to the embodiments presented. For example, a person skilled in the art who understands the scope of the present application may propose other embodiments that fall within the scope of the scope of the present application by adding, changing, or deleting components, and such are also to be considered to be within the scope of the scope of the present application. In the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0052] FIG. 1 is a perspective view showing at least a portion of a radioactive battery (10) according to one embodiment of the present application. FIG. 2 is a plan view showing at least a portion of a radioactive battery cell (100) of a radioactive battery (10) according to one embodiment of the present application.

[0053] In one example, the radioactive battery (10) may include a plurality of radioactive battery cells (100) comprising an electrode layer (110), a radioactive source (120), and an energy conversion layer (130), and a connector (200) disposed in at least some of the gaps between any adjacent radioactive battery cells (100A, 100B) among the plurality of radioactive battery cells (100) to electrically connect each electrode layer (110A, 110B) of the adjacent radioactive battery cells (100A, 100B) to each other.

[0054] The present application may provide a radioactive battery (10) that can be applied to electronic products requiring high power by generating high-density energy. Electronic products requiring high power may be, for example, semiconductor memory such as DRAM or NAND FLASH, processors, mobile devices, automobiles, drones, and computers, and any other products that consume power. In this specification, electronic products requiring high power may be referred to as loads.

[0055] A radioactive battery (10) according to one embodiment of the present application may include a radioactive battery cell (100). In one example, the radioactive battery (10) may include a plurality of radioactive battery cells (100) and may be electrically connected. In one example, the radioactive battery (10) may be advantageous for generating high-density energy by electrically connecting a plurality of radioactive battery cells (100).

[0056] In one example, the radioactive battery (10) may include a plurality of radioactive battery cells (100) stacked in a stacking direction that is one direction (e.g., D1 in FIG. 1). The plurality of radioactive battery cells (100) may be stacked along one direction. Having a structure in which the plurality of radioactive battery cells (100) are stacked is advantageous in terms of yield and scale-up.

[0057] In one example, the upper surface (100US) of the radioactive battery cell may refer to one surface of the radioactive battery cell (100) according to the stacking direction (D1), and in this specification, the first intersection direction (D2) may refer to a direction that is parallel to the upper surface (100US) of the radioactive battery cell and intersects the stacking direction (D1), and the second intersection direction (D3) may refer to a direction that is parallel to the upper surface (100US) of the radioactive battery cell and intersects the stacking direction (D1) and the first intersection direction (D2).

[0058] A radioactive cell (100) according to one embodiment of the present application may include an electrode layer (110). The electrode layer (110) may include an electrode, and the electrode may include an anode that provides electrons and a cathode that receives electrons.

[0059] In one example, the electrode layer (110) may include a first electrode (111) and a second electrode (112) which are electrodes. The second electrode (112) may be the opposite electrode of the first electrode (111). That is, if the first electrode (111) is an anode, the second electrode (112) may be a cathode, and if the first electrode (111) is a cathode, the second electrode (112) may be an anode. In one example, the first electrode (111) may be a cathode and the second electrode (112) may be an anode.

[0060] In one example, the first electrode (111) and the second electrode (112) may be current collectors. The type, size, and shape of the first electrode (111) and the second electrode (112) are not particularly limited as long as they have electrical conductivity without causing physical and chemical changes with other components within the radioactive cell (10). For example, the first electrode (111) and the second electrode (112) may be torus-shaped. Additionally, for example, the first electrode (111) and the second electrode (112) may comprise a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO). 2-x Sn x O3, 0 <x<2)과 같은 투명 산화물을 포함하거나, 또는 탄소 나노 튜브(carbon-nano tube), 그래핀(graphene) 또는 산화 그래핀 등 탄소 계열 화합물을 포함할 수 있다.

[0061] In one example, the electrode layer (110) may include an electrode insulating layer (113) disposed between the first electrode (111) and the second electrode (112). In one example, the first electrode (111) and the second electrode (112) may be disposed in one layer of the electrode layer (110), and by disposing of the electrode insulating layer (113) between the first electrode (111) and the second electrode (112), a short circuit between these electrodes can be prevented. In one example, by disposing of both the first electrode (111) and the second electrode (112) in one layer, the total thickness of the electrode layer (110) can be minimized, thereby improving the power efficiency (power generated per unit volume) of the radioactive battery (10). In one example, the electrode layer (110) may surround at least a portion of the energy conversion layer (130).

[0062] In one example, the electrode insulating layer (113) is not particularly limited to any material having electrical insulating properties, but may include one or more selected from the group consisting of, for example, silicate (e.g. TEOS), silicon nitride (SiN, silicon nitride), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0063] A radioactive battery cell (100) according to one embodiment of the present application may include a radioactive source (120). In one example, the radioactive source (120) may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it decays and emits radiation. For example, the radioactive isotope is americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 252 Cf) and berkelium-249( 249 It may include alpha-emitting isotopes containing one or more of Bk). In another example, the radioactive isotope is tritium ( 3 H, tritium), potassium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 It may include a beta-emitting isotope containing one or more of W). In another example, the radioactive isotope is cobalt-60 ( 60 Co), cesium-137 137 Cs), iodine-131( 131 I), Gallium-67( 67 Ga) and thallium-201( 201 It may include a gamma-emitting isotope containing one or more of Tl). The radioactive isotope contained in the radioactive source (120) may include an alpha-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include a beta-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include one or more of an alpha-emitting isotope and a beta-emitting isotope. The radioactive isotope contained in the radioactive source (120) may include one or more of an alpha-emitting isotope, a beta-emitting isotope, and a gamma-emitting isotope.

[0064] In one example, the radiation source (120) may be manufactured by one or more of, for example, electroplating, electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Among these, the electroplating method may be appropriate considering radiation shielding and safety of the worker.

[0065] In one example, the radioactive source (120) can be prepared as a plating solution for electroplating. For example, nickel-63 ( 63 When using Ni), nickel-62 ( 62 Nickel-63 (Ni) by irradiating with neutrons63 After manufacturing Ni), chlorinate it 63 Nickel-63 by generating NiCl2 ( 63 A plating solution for Ni can be prepared. Or Nickel-62 ( 62 First, chlorine (Ni) 62 After preparing NiCl2, irradiate with neutrons 63 Nickel-63 containing NiCl2 ( 63 A plating solution for Ni can be prepared, but is not limited thereto.

[0066] In one example, the plating solution may further include additives such as a pH regulator and a pH stabilizer, which can help in the uniform formation of the radioactive source (120) by controlling the plating speed or growth rate.

[0067] A radioactive battery cell (100) according to one embodiment of the present application may include an energy conversion layer (130) disposed between an electrode layer (110) and a radioactive source (120) and surrounding at least a portion of a radioactive source (120).

[0068] In one example, the energy conversion layer (130) can form electron-hole pairs by radiation emitted from a radioactive source (120). In one example, the energy conversion layer (130) can be provided as an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye-sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs by radiation.

[0069] In one example, the inorganic layer may include an inorganic material that generates electrical energy upon receiving light. The inorganic material is not particularly limited but may include, for example, one or more of silicon, single-crystal silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, chalcopyrite compounds, perovskite compounds, and castoride compounds.

[0070] InGaSe may comprise one or more of In, In4Se3, InSe, In2Se3, GaSe, Ga2Se3, and Se, or a mixture thereof; CuSe may comprise one or more of Cu, Cu2Se, CuSe2, and Se, or a mixture thereof; and InSe may comprise one or more of In, In4Se3, InSe, In2Se3, and Se, or a mixture thereof. The chalcopyrite compound may comprise, for example, one of CuAlS2, CuAlSe2, CuAlTe2, CuGaS2, CuGaSe2, CuGaTe2, CuInS2, CuInSe2, CuInTe2, AgAlS2, AgAlSe2, AgAlTe2, AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, and AgInTe2. The perovskite compound may comprise, for example, one or more of SrTiO3 and CaTiO3. The castorite compound may include, for example, a castorite compound of group I2-II-IV-VI4, and specifically may include one or more of Cu2ZnSnS4, Cu2ZnSnSe4, Cu2ZnGeS4, Cu2ZnGeSe4, Cu2MnSnS4, Cu2MnSnSe4, Cu2MnGeS4, Cu2MnGeSe4, Ag2ZnSnS4, Ag2ZnSnSe4, Ag2ZnGeS4, Ag2MnSnS4, Ag2MnSnSe4, Ag2MnGeS4, and Ag2MnGeSe4.

[0071] The organic layer may contain organic materials that generate electrical energy upon receiving light. Inorganic materials are not specifically limited, but for example, fullerene (C 60It may include one or more of the following: )-type compounds, phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), phenylpyridine derivatives such as 4,6-bis(3,5-di-4-pyridinylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), thiophene derivatives such as poly(3-hexylthiophene-2,5-diyl)(P3HT), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophene.

[0072] The organic-inorganic hybrid layer may include an organic-inorganic hybrid material that generates electrical energy upon receiving light. The organic-inorganic hybrid material is not particularly limited but may include organic-inorganic perovskite compounds, for example, halide-based organic-inorganic perovskite compounds. The organic-inorganic hybrid material is CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, CH3NH3PbI3 (3-x) Cl x , CH3NH3PbI (3-x) Br x , CH3NH3PbBr (3-x) Cl x , CH3NH3Pb (1-y) Sn y I3, CH3NH3Pb (1-y) Sn y Br3, CH3NH3Pb (1-y) Sn y Cl3, CH3NH3Pb (1-y) Sn y I (3-x) Cl x , CH3NH3Pb (1-y) Sn y I (3-x) Br x and CH3NH3Pb (1-y) Sn y Br (3-x) Cl xIt may include one or more of the above compounds (0≤x≤3, 0≤y≤1), and may also include CFH2NH3, CF2HNH3, CF3NH3, or NH2CH=NH2 instead of CH3NH3 in the above compounds.

[0073] The dye-sensitized layer may include a dye that generates electrical energy upon receiving light. The dye may include one or more of ruthenium complexes, indoline organic dyes, and natural dyes, although it is not particularly limited. Ruthenium complexes may include, for example, one or more of N3 and N719. Indoline organic dyes may include, for example, D149. Natural dyes are those that can be extracted from fruits or vegetables, and may include, for example, one or more of anthocyanin, chlorophyll, beta-carotene, curcumin, betalain, and rosmarinic acid.

[0074] In one example, the energy conversion layer (130) may include a scintillator that absorbs the energy of radiation generated from a radiation source (120) and converts it into light energy or electrical energy.

[0075] For example, the energy conversion layer (130) may include at least a scintillator inside. In another example, the energy conversion layer (130) may include a thin film layer including a scintillator provided on at least one surface.

[0076] In one example, the scintillator may include one or more of inorganic and organic compounds, though not specifically limited. Inorganic compounds are, for example, NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BGO, BaF2, CaF2(Eu), ZnS(Ag), CaWO4, CdWO4, YAG(Ce) (Y3Al5O 12 It may include one or more of (Ce)), GSO, LSO, GAGG:Ce, ZnO(Ga), LaCl3(Ce), and LaBr3(Ce). Organic compounds may include, for example, one or more of anthracene, stilbene, naphthalene, and polyethylene naphthalate.

[0077] In one example, the energy conversion layer (130) may include a first type semiconductor (131) and a second type semiconductor (132). One of the first type semiconductor (131) and the second type semiconductor (132) may be a P-type semiconductor and the other may be an N-type semiconductor. That is, the first type semiconductor (131) and the second type semiconductor (132) may be of different types. For example, if the first type semiconductor (131) is a P-type semiconductor, the second type semiconductor (132) may be an N-type semiconductor, and if the first type semiconductor (131) is an N-type semiconductor, the second type semiconductor (132) may be a P-type semiconductor. In one example, among a plurality of radioactive battery cells (100), each radioactive battery cell (100) may independently include a first type semiconductor (131) and a second type semiconductor (132), and whether each first type semiconductor (131) is a P-type semiconductor (or whether the second type semiconductor (132) is an N-type semiconductor) or whether the first type semiconductor (131) is an N-type semiconductor (or whether the second type semiconductor (132) is a P-type semiconductor may vary depending on the design.

[0078] In this specification, a P-type semiconductor may be silicon or diamond doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are Group 13 elements of the periodic table, or a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are Group 13 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN). In the present specification, the N-type semiconductor may be, for example, silicon or diamond doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are group 15 elements of the periodic table.

[0079] In one example, the first type semiconductor (131) and the second type semiconductor (132) may each independently include a metal oxide having the chemical formula AMO3. Here, A may be one selected from La, Ba, Sr, and K, and M may be one selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, the first type semiconductor (131) and the second type semiconductor (132) may each independently include a plurality of metal oxides of different types. Different types may mean that the elements of A or M are different. In one example, the first type semiconductor (131) and the second type semiconductor (132) may form a homojunction with each other.

[0080] For example, the first type semiconductor (131) and the second type semiconductor (132) are each independently BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (Here 0 <x<1) 및 LaAlO3중 하나 이상을 포함할 수 있다.

[0081] In one example, the electrode layer (110) and the energy conversion layer (130) may be manufactured, for example, by deposition or epitaxial growth, but are not limited thereto. Here, the deposition may be one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0082] In one example, the first electrode (111) may surround at least a portion of the first type semiconductor (131), and the second electrode (112) may surround at least a portion of the second type semiconductor (132). In one example, the electrode insulating layer (113) may surround at least a portion of the boundary between the first type semiconductor (131) and the second type semiconductor (132). By surrounding at least a portion of the boundary between the first type semiconductor (131) and the second type semiconductor (132), the first electrode (111) and the second electrode (112) may come into contact with each other, thereby minimizing the occurrence of electrical problems such as short circuits.

[0083] In one example, the first type semiconductor (131) may surround at least a portion of the radioactive source (120). In one example, the second type semiconductor (132) may surround a portion of the first type semiconductor (131). Through this arrangement of the first type semiconductor (131) and the second type semiconductor (132), the surface area in contact with each other can be increased, thereby improving the power efficiency of the radioactive battery (10). In one example, it may be advantageous for the power efficiency of the radioactive battery (10) for radiation generated from the radioactive source (120) to be incident on the energy conversion layer (130) over the widest possible range.

[0084] In one example, the first electrode (111) may be in contact with at least a portion of the first type semiconductor (131). Additionally, the second electrode (112) may be in contact with at least a portion of the second type semiconductor (132). Additionally, the radiation source (120) may be in contact with at least a portion of the first type semiconductor (131).

[0085] A radioactive battery cell (100) according to one embodiment of the present application may include a connector (200) disposed in at least some of the gaps existing between any adjacent radioactive battery cells (100A, 100B) of a plurality of radioactive battery cells (100) to electrically connect each electrode (110A, 110B) of the adjacent radioactive battery cells (100A, 100B) to each other.

[0086] In one example, the connector (200) may include a conductive material. Here, the conductive material may include one or more selected from the group consisting of, for example, tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, spacing, arrangement, and shape of the connectors (200) may be changed according to the design without being limited to those illustrated. In one example, the connector (200) may have the form of a solder ball or a solder bump.

[0087] In one example, adjacent radioactive battery cells (100A, 100B) may include a first radioactive battery cell (100A) and a second radioactive battery cell (100B). The configurations included in each radioactive battery cell (100A, 100B) may refer to the foregoing or subsequent descriptions, unless contradictory. The first radioactive battery cell (100A) may include an electrode (110A) comprising a first-1 electrode (111A), a first-2 electrode (112A), and an electrode insulating layer (113), a radioactive source (120), and an energy conversion layer (130). The second radioactive battery cell (100B) may include an electrode (110B) comprising a second-1 electrode (111B), a second-2 electrode (112B), and an electrode insulating layer (113), a radioactive source (120), and an energy conversion layer (130). In one example, adjacent radioactive cell (100A, 100B) can be electrically connected through a connector (200) as described above.

[0088] Referring to FIG. 1, the width (LT) of the radioactive cell (100) may be greater than the thickness (TH) of the radioactive cell (100). Here, the width (LT) of the radioactive cell (100) may refer to the width in the first cross direction (D2) or the second cross direction (D3), and the thickness (TH) of the radioactive cell (100) may refer to the width in the stacking direction (D1). This allows for the formation of a more intensive stacked structure of the radioactive cell (100).

[0089] In one example, the ratio (TH / LT) of the thickness (TH) of the radioactive cell (100) to the width (LT) of the radioactive cell (100) may be 0.005 to 0.01, 0.0055 to 0.015, or 0.006 to 0.02. This allows for the formation of a more dense stacked structure of the radioactive cell (100). Additionally, the width (LT) of the radioactive cell (100) may be, for example, 1 cm to 50 cm, 5 cm to 30 cm, or 10 cm to 20 cm. Additionally, the thickness (TH) of the radioactive cell (100) may be, for example, 10 μm to 300 μm, 50 μm to 250 μm, or 100 μm to 200 μm.

[0090] Referring to FIG. 2, in one example, when viewed from the stacking direction (D1), the energy conversion layer (130) may surround at least a portion of the radiation source (120). Additionally, when viewed from the stacking direction (D1), the energy conversion layer (130) and the radiation source (120) may not overlap each other. In one example, when viewed from the stacking direction (D1), the electrode layer (110) may surround at least a portion of the energy conversion layer (130). Additionally, when viewed from the stacking direction (D1), the electrode layer (110) and the energy conversion layer (130) may not overlap each other.

[0091] Referring to FIG. 2, in one example, when viewed from the stacking direction (D1), the electrode insulating layer (113) may be provided between the first electrode (111) and the second electrode (112). Additionally, when viewed from the stacking direction (D1), the insulating layer (113) may not overlap with the first electrode (111) and the second electrode (112).

[0092] FIG. 3 is a perspective view showing at least a portion of a radioactive battery cell (100) of a radioactive battery (10) according to one embodiment of the present application. FIG. 4 is a plan view showing at least a portion of a radioactive battery cell (100) of a radioactive battery (10) according to one embodiment of the present application.

[0093] In one example, the energy conversion layer (130) may include a first energy conversion layer (130-1) and a second energy conversion layer (130-2), each comprising a first type semiconductor (131) and a second type semiconductor (132). That is, the energy conversion layer (130) may have a multilayer structure, wherein the multilayer structure may mean a structure in which each layer is not superimposed when viewed from the stacking direction (D1).

[0094] In one example, the first energy conversion layer (130-1) may surround at least a portion of the radioactive source (120), and the second energy conversion layer (130-2) may surround at least a portion of the first energy conversion layer (130-1).

[0095] In one example, the first type semiconductor (131-2) of the second energy conversion layer (130-2) may surround at least a portion of the second type semiconductor (132-1) of the first energy conversion layer (130-1). In one example, the second type semiconductor (132-2) of the second energy conversion layer (130-2) may surround at least a portion of the first type semiconductor (131-1) of the first energy conversion layer (130-1). Through this arrangement, the contact surface area between the first type semiconductor (131) and the second type semiconductor (132) can be increased, thereby improving the power efficiency of the radioactive battery (10).

[0096] FIG. 5 is a plan view illustrating at least a portion of a radioactive cell (100) of a radioactive battery (10) according to one embodiment of the present application. In one example, at least some of the plurality of radioactive cell (100A, 100B) may include a dielectric layer (140) surrounding at least a portion of a radioactive source (120).

[0097] In one example, the dielectric layer (140) may include a dielectric. In one example, the dielectric is not particularly limited as long as it is used in the art. The dielectric layer (140) can optimize the placement of the radiation source (120) and further improve electrical stability by minimizing the occurrence of leakage current.

[0098] In one example, the dielectric layer (140) may include a low dielectric with a dielectric constant of less than 3.9. Low dielectrics are not specifically limited as long as they are used in the industry, but include Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethylEycloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), TriMethylSilylBorate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilylPosphate (TMSP), PolyTetraFluoroEthylene (PTFE), TOSZ (Tonen SilaZen), FSG (Fluoride Silicate Glass), polyimide nanofoams such as polypropylene oxide, CDO (Carbon Doped Silicon Oxide), OSG (Organo Silicate Glass), SiLK, Amorphous Fluorinated Carbon, silica aerogels, and silica It may include one or more materials from the group consisting of xerogels and mesoporous silica. If the dielectric layer (140) includes a low dielectric, it is possible to efficiently transfer radiation generated from, for example, a radiation source (120) to the energy conversion layer (130) while minimizing the occurrence of leakage current.

[0099] In one example, the dielectric layer (140) may include a high dielectric with a dielectric constant of 3.9 or higher. High dielectrics are not particularly limited as long as they are used in the art, but may include one or more from the group consisting of, for example, boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate. If the dielectric layer (140) includes a high dielectric material, the radioactive battery cell (100) can be designed with a high integration density while minimizing the occurrence of leakage current.

[0100] It may include one or more selected from the group consisting of silicate (e.g., TEOS), silicon nitride (SiN, silicon nitride), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0101] FIG. 6 is a perspective view showing at least a portion of a radioactive battery (10) according to one embodiment of the present application. FIG. 7 is a plan view showing at least a portion of an insulating layer (300) of a radioactive battery (10) according to one embodiment of the present application. FIG. 8 is a plan view showing at least a portion of an insulating layer (300) of a radioactive battery (10) according to one embodiment of the present application.

[0102] In one example, there may be multiple connectors (200). The arrangement of the connectors (200) may vary the method of connection to each electrode (110A, 110B) of adjacent radioactive cell (100A, 100B), and specifically, the arrangement of the connectors (200) may electrically connect adjacent radioactive cell (100A, 100B) in series or in parallel.

[0103] Referring to FIG. 1, in one example, when adjacent radioactive cell (100A, 100B) are connected in series, some of the connectors (200) may electrically connect the first electrode (111A) of one of the adjacent radioactive cell (100A) to the second electrode (112B) of the other one (100B), and other of the connectors (200) may electrically connect the second electrode (112A) of one of the adjacent radioactive cell (100A) to the first electrode (111B) of the other one (100B). Connecting adjacent radioactive cell (100A, 100B) in series can make the potential difference of the radioactive cell (10) greater than in the case of a single radioactive cell or a parallel connection of radioactive cells, thereby improving the electrical output applied to the load.

[0104] Referring to FIG. 6, in one example, when adjacent radioactive battery cells (100A, 100B) are connected in parallel, some of the connectors (200) may electrically connect the first electrode (111A) of one of the adjacent radioactive battery cells (100A) to the first electrode (111B) of the other one (100B), and other parts of the connectors (200) may electrically connect the second electrode (112A) of one of the adjacent radioactive battery cells (100A) to the second electrode (112B) of the other one (100B). Connecting adjacent radioactive battery cells (100A, 100B) in parallel can improve the lifespan of the radioactive battery (10) compared to connecting a single radioactive battery cell or radioactive battery cells in series.

[0105] In one example, an insulating layer (300) may be included in at least some of the gaps existing between adjacent radioactive battery cells (100A, 100B). In one example, the insulating layer (300) may be placed between adjacent radioactive battery cells (100) in which a connector (200) is placed. Meanwhile, the insulating layer (300) prevents short circuits caused by contact between electrodes and prevents unexpected damage caused by radiation, etc., generated from the radiation source (120) of each radioactive battery cell (100) being transmitted to other radioactive battery cells (100).

[0106] In one example, the insulating layer (300) is not particularly limited to any material having electrical insulating properties, but may include, for example, one or more selected from the group consisting of silicate (e.g. TEOS), silicon nitride (SiN, silicon nitride), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0107] In one example, the radioactive source (120) may be positioned to penetrate the insulating layer (300) in the stacking direction (D1). That is, the radioactive battery (10) may include a radioactive source (120) extended in the stacking direction (D1) of the radioactive battery cell (100).

[0108] In one example, the connector (200) may be positioned to penetrate the insulating layer (300) in the stacking direction (D1). That is, the connector (200) may penetrate the insulating layer (300) and include an exposed portion exposed from the surface of the insulating layer (300) and a buried portion embedded in the insulating layer (300). In one example, the connector (200) may electrically connect each electrode (110A, 110B) of adjacent radioactive battery cells (100A, 100B) through the exposed portion exposed from both surfaces of the insulating layer (300). Additionally, in one example, the connector (200) may stably electrically connect each electrode (110A, 110B) of adjacent radioactive battery cells (100A, 100B) while fixing the position of the connector (200) through the buried portion embedded in the insulating layer (300).

[0109] In one example, the connector (200) may be placed in at least a portion of a through hole penetrating the insulating layer (300). Here, the through hole in which the connector (200) is placed may be the aforementioned embedded portion. The through hole may be penetrating with respect to the stacking direction (D1). The through hole may be manufactured, for example, through a physical penetration method, wet etching, dry etching, or a photo process, but is not limited thereto. The connector (200) may be placed in at least a portion of the through hole by applying a paste containing a conductive material or by a printing method.

[0110] Referring to FIG. 8, in one example, the insulating layer (300) may include a dielectric layer (220) that surrounds at least a portion of a radioactive source (120) disposed in the insulating layer (300).

[0111] Here, the dielectric layer (220) disposed on the insulating layer (300) may include a dielectric. In one example, the dielectric is not particularly limited as long as it is used in the industry. The dielectric layer (220) can optimize the placement of the radiation source (120) and further improve electrical stability by minimizing the occurrence of leakage current.

[0112] In one example, the dielectric layer (220) disposed on the insulating layer (300) may include a low dielectric with a dielectric constant of less than 3.9. Low dielectrics are not specifically limited as long as they are used in the industry, but include Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethylEycloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), TriMethylSilylBorate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilylPosphate (TMSP), PolyTetraFluoroEthylene (PTFE), TOSZ (Tonen SilaZen), FSG (Fluoride Silicate Glass), polyimide nanofoams such as polypropylene oxide, CDO (Carbon Doped Silicon Oxide), OSG (Organo Silicate Glass), SiLK, Amorphous Fluorinated Carbon, silica aerogels, and silica It may include one or more from the group consisting of xerogels and mesoporous silica. If the dielectric layer (220) disposed on the insulating layer (300) includes a low dielectric, it is possible to efficiently transfer radiation generated from, for example, a radiation source (120) to the energy conversion layer (130) while minimizing the occurrence of leakage current.

[0113] In one example, the dielectric layer (220) disposed on the insulating layer (300) may include a high dielectric material having a dielectric constant of 3.9 or higher. High dielectrics are not particularly limited as long as they are used in the art, but may include one or more from the group consisting of, for example, boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate. If the dielectric layer (220) placed in the insulating layer (300) includes a high dielectric material, the radioactive battery cell (100) can be designed with a high integration density while minimizing the occurrence of leakage current.

[0114] In one example, the dielectric layer (220) disposed on the insulating layer (300) may be integrally connected with the dielectric layer (140) surrounding at least some of the aforementioned plurality of radioactive cell (100A, 100B) and at least some of the radioactive source (120).

[0115] FIG. 9 is a perspective view showing at least a portion of a radioactive battery (10) according to one embodiment of the present application. FIG. 10 is a plan view showing at least a portion of an insulating layer (300) of a radioactive battery (10) according to one embodiment of the present application.

[0116] In one example, the insulating layer (300) may include a semiconductor layer (210) that surrounds at least a portion of the radiation source (120) placed in the insulating layer (300). In one example, the semiconductor layer (210) may be exposed from the insulating layer (300) with respect to the stacking direction (D1). Additionally, the semiconductor layer (210) may be in contact with each energy conversion layer (130) of the adjacent radioactive battery cells (100A, 100B). Through this arrangement, radiation generated from the radiation source (120) can be incident on the energy conversion layer (130) over the widest possible range, thereby improving the power efficiency of the radioactive battery (10).

[0117] In one example, the semiconductor layer (210) may include a Type A semiconductor (211) and a Type B semiconductor (212). One of the Type A semiconductor (211) and the Type B semiconductor (212) may be a P-type semiconductor and the other may be an N-type semiconductor. That is, the Type A semiconductor (211) and the Type B semiconductor (212) may be of different types. For example, if the Type A semiconductor (211) is a P-type semiconductor, the Type B semiconductor (212) may be an N-type semiconductor, and if the Type A semiconductor (211) is an N-type semiconductor, the Type B semiconductor (212) may be a P-type semiconductor.

[0118] In one example, a Type A semiconductor (211) can surround at least a portion of a radiation source (120) placed in an insulating layer (300), and a Type B semiconductor (212) can surround at least a portion of the Type A semiconductor (211). Through this arrangement of the Type A semiconductor (211) and the Type B semiconductor (212), the surface area in contact with each other can be increased, thereby improving the power efficiency of the radioactive battery (10).

[0119] FIG. 11 is a plan view showing at least a portion of an insulating layer (300) of a radioactive battery (10) according to one embodiment of the present application. FIG. 12 is a perspective view showing at least a portion of a radioactive battery (10) according to one embodiment of the present application.

[0120] In one example, the semiconductor layer (210) may include a first semiconductor layer (210-1) and a second semiconductor layer (210-2), each comprising a type A semiconductor (211) and a type B semiconductor (212). That is, the semiconductor layer (210) may have a multilayer structure, wherein the multilayer structure may mean a structure in which each layer is not overlapped when viewed from the stacking direction (D1).

[0121] In one example, the first semiconductor layer (210-2) can surround at least a portion of the radiation source (120), and the second semiconductor layer (210-2) can surround at least a portion of the first semiconductor layer (210-1).

[0122] In one example, the type A semiconductor (211-2) of the second semiconductor layer (210-2) may surround at least a portion of the type B semiconductor (212-1) of the first semiconductor layer (210-1). In one example, the type B semiconductor (212-2) of the second semiconductor layer (210-2) may surround at least a portion of the type A semiconductor (211-2) of the first semiconductor layer (210-1). Through this arrangement, the contact surface area between the type A semiconductor (211) and the type B semiconductor (212) can be increased, thereby improving the power efficiency of the radioactive battery (10).

[0123] In one example, the first semiconductor layer (210-1) may be in contact with the first energy conversion layer (130-1) in at least a portion of the stacking direction (D1). In one example, the second semiconductor layer (210-2) may be in contact with the second energy conversion layer (130-2) in at least a portion of the stacking direction (D1). Through this arrangement, the contact surface area between the type A semiconductor (211) and the type B semiconductor (212) can be increased, thereby improving the power efficiency of the radioactive battery (10).

[0124] In one example, the type A semiconductor (211-1) and the type B semiconductor (212-1) of the first semiconductor layer (210-1) can each come into contact with at least a portion of the type 1 semiconductor (131-1) and the type 2 semiconductor (132-1) of the first energy conversion layer (310-1). That is, the type A semiconductor (211-1) of the first semiconductor layer (210-1) can come into contact with at least a portion of the type 1 semiconductor (131-1) of the first energy conversion layer (310-1), and the type B semiconductor (212-1) of the first semiconductor layer (210-1) can come into contact with at least a portion of the type 2 semiconductor (132-1) of the first energy conversion layer (310-1). In one example, the type A semiconductor (211-2) and the type B semiconductor (212-2) of the second semiconductor layer (210-2) can each come into contact with at least a portion of the type 1 semiconductor (131-2) and the type 2 semiconductor (132-2) of the second energy conversion layer (130-2). That is, the type A semiconductor (211-2) of the second semiconductor layer (210-2) can come into contact with at least a portion of the type 1 semiconductor (131-2) of the second energy conversion layer (310-2), and the type B semiconductor (212-2) of the second semiconductor layer (210-2) can come into contact with at least a portion of the type 2 semiconductor (132-2) of the second energy conversion layer (310-2). Through this arrangement, the power efficiency of the radioactive battery (10) can be improved by maximizing the contact surface area between the first type semiconductor (131), the second type semiconductor (132), the A type semiconductor (211), and the B type semiconductor (212).

[0125] In one example, the type A semiconductor (211-1) of the first semiconductor layer (210-1) may have a different type from the type 1 semiconductor (131-1) of the first energy conversion layer (130-1), and the type B semiconductor (212-1) of the first semiconductor layer (210-1) may have a different type from the type 2 semiconductor (132-1) of the first energy conversion layer (130-1). In one example, the type A semiconductor (211-2) of the second semiconductor layer (210-2) may have a different type from the type 1 semiconductor (131-2) of the second energy conversion layer (130-2), and the type B semiconductor (212-2) of the second semiconductor layer (210-2) may have a different type from the type 2 semiconductor (132-2) of the second energy conversion layer (130-2). Through this arrangement, the power efficiency of the radioactive battery (10) can be improved by maximizing the contact surface area between the first type semiconductor (131), the second type semiconductor (132), the A type semiconductor (211), and the B type semiconductor (212).

[0126] FIG. 13 is a perspective view illustrating at least a portion of a radioactive battery (10) according to one embodiment of the present application. The following description may refer to the description of FIG. 1 to FIG. 12 unless contradictory.

[0127] In one example, the radioactive battery (10) may include a plurality of radioactive battery cells (100) comprising an electrode layer (110), a radioactive source (120), and an energy conversion layer (130); an insulating layer (300) disposed in at least part of the gaps existing between any adjacent radioactive battery cells (100A, 100B) among the plurality of radioactive battery cells (100) and disposed at a position corresponding to each electrode layer (110A, 110B) of the adjacent radioactive battery cells (100A, 100B); a first connecting part (510) electrically connecting each first electrode (111A, 111B) of the adjacent radioactive battery cells (100A, 100B); and a connecting part (500) comprising a second connecting part (520) electrically connecting each second electrode (112A, 112B) of the adjacent radioactive battery cells (100A, 100B). there is.

[0128] In one example, the connection portion (500) may include a connection portion electrically connected to each electrode (110) of a plurality of radioactive battery cells (100) and a collection portion of the connection portions. That is, the first connection portion (510) may include a first connection portion electrically connected to each first electrode (111) of a plurality of radioactive battery cells (100) and a first collection portion of each first connection portion. The second connection portion (520) may include a second connection portion electrically connected to each second electrode (112) of a plurality of radioactive battery cells (100) and a second collection portion of each second connection portion. In one example, the first collection portion and the second collection portion may be electrically connected to a load, thereby allowing the radioactive battery (10) to supply power to the load.

[0129] In one example, at least some of the energy conversion layers (130) of the plurality of radioactive battery cells (100) may extend to an area where an insulating layer (300) is disposed. In one example, adjacent radioactive battery cells (100A, 100B) may be electrically connected through a connecting part (500) instead of the aforementioned connecting part (200), and each energy conversion layer (130) included in the adjacent radioactive battery cells (100A, 100B) may be connected to each other. In one example, each energy conversion layer (130) included in the adjacent radioactive battery cells (100A, 100B) may be formed integrally.

[0130] A power device according to one embodiment of the present application may include a radioactive cell (10) and a shielding member containing the radioactive cell (10). The shielding member may include a material capable of shielding or reflecting radiation. For example, the shielding member may include one or more of a metal material such as copper, silver, and aluminum, and a polymer material such as polyolefin, polyester, and poly(meta)acrylate. Polyolefin may include one or more of polyethylene, polypropylene, and ethylene-propylene copolymer, for example, though not particularly limited. Polyester may include polyethylene terephthalate, for example, though not particularly limited. Poly(meth)acrylate may include, for example, ethylene-(meth)acrylate copolymer, although not specifically limited. The shielding member may include one or more of lead (Pb) and concrete, for example, if a radioactive source (120) contains a gamma-emitting isotope. The shielding member can minimize electromagnetic interference, the occurrence of parasitic circuits, or power loss caused by the operation of a plurality of radioactive battery cells (100) and a connector (200).

[0131] Although various embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with average knowledge in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Furthermore, the above-described embodiments may be implemented by deleting some components, and each embodiment may be implemented in combination with one another.

[0132] [Explanation of the symbol]

[0133] 10... radioactive battery

[0134] 100... radioactive battery cell

[0135] 110... electrode layer

[0136] 120... radioactive source

[0137] 130... energy conversion layer

[0138] 140... Genome layer

[0139] 200... connector

[0140] 210... semiconductor layer

[0141] 300... insulation layer

[0142] 500... connection part

[0143] [Representative also]

[0144] Fig. 1

Claims

A plurality of radioactive battery cells stacked in a unidirectional stacking direction, comprising an electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode, a radioactive source, and an energy conversion layer disposed between the electrode layer and the radioactive source surrounding at least a portion of the radioactive source; and A radioactive battery comprising a connector disposed in at least some of the gaps existing between any adjacent radioactive battery cells among the plurality of radioactive battery cells, electrically connecting each electrode layer of the adjacent radioactive battery cells to each other. In Article 1, The electrode layer surrounds at least a portion of the energy conversion layer, Radioactive battery. In Article 2, The above energy conversion layer includes a first type semiconductor and a second type semiconductor, and The first electrode surrounds at least a portion of the first type semiconductor, and The second electrode surrounds at least a portion of the second type semiconductor, Radioactive battery. In Paragraph 3, The electrode insulating layer surrounds at least a portion of the boundary between the first type semiconductor and the second type semiconductor, Radioactive battery. In Paragraph 3, The above-mentioned first-type semiconductor surrounds at least a portion of the above-mentioned radioactive source, and The above-mentioned second-type semiconductor surrounds a part of the above-mentioned first-type semiconductor, Radioactive battery. In Article 2, The above energy conversion layer includes a first energy conversion layer and a second energy conversion layer, each comprising a first type semiconductor and a second type semiconductor, and The first energy conversion layer surrounds at least a portion of the radioactive source, and The second energy conversion layer surrounds at least a portion of the first energy conversion layer, Radioactive battery. In Article 6, The first type semiconductor of the second energy conversion layer surrounds at least a portion of the second type semiconductor of the first energy conversion layer, and the second type semiconductor of the second energy conversion layer surrounds at least a portion of the first type semiconductor of the first energy conversion layer. Radioactive battery. In Article 1, At least some of the plurality of radioactive battery cells further include a dielectric layer in which the radioactive source surrounds at least some portion. Radioactive battery. In Article 1, The above connector is multiple, and Some of the above-mentioned connectors electrically connect a first electrode of one of the adjacent radioactive battery cells and a second electrode of another, and other parts of the above-mentioned connectors electrically connect a second electrode of one of the adjacent radioactive battery cells and a first electrode of another. Radioactive battery. In Article 1, The above connector is multiple, and Some of the above-mentioned connectors electrically connect a first electrode of one of the adjacent radioactive battery cells to another first electrode, and other parts of the above-mentioned connectors electrically connect a second electrode of one of the adjacent radioactive battery cells to another second electrode. Radioactive battery. In Article 1, It further includes an insulating layer disposed in at least some of the gaps existing between each of the adjacent radioactive battery cells, and The above-mentioned radiation source is positioned to penetrate the insulating layer with respect to the stacking direction, Radioactive battery. In Article 11, The above connector is disposed by penetrating the insulating layer with respect to the stacking direction, Radioactive battery. In Article 11, The insulating layer further comprises a dielectric layer surrounding at least a portion of the radiation source disposed in the insulating layer. Radioactive battery. In Article 11, The insulating layer further comprises a semiconductor layer surrounding at least a portion of the radiation source disposed in the insulating layer. Radioactive battery. In Article 14, The semiconductor layer is exposed from the insulating layer with respect to the stacking direction and contacts each energy conversion layer of the adjacent radioactive cell, Radioactive battery. In Article 14, The above semiconductor layer includes a Type A semiconductor and a Type B semiconductor, and The above-mentioned Type A semiconductor surrounds at least a portion of the radiation source disposed in the insulating layer, and The above-mentioned Type B semiconductor surrounds at least a portion of the above-mentioned Type A semiconductor, Radioactive battery. In Article 14, The above semiconductor layer includes a first semiconductor layer and a second semiconductor layer, each comprising a type A semiconductor and a type B semiconductor, and The first semiconductor layer surrounds at least a portion of the radiation source disposed in the insulating layer, and The second semiconductor layer surrounds at least a portion of the first semiconductor layer, Radioactive battery. In Article 17, The type A semiconductor of the second semiconductor layer surrounds at least a portion of the type B semiconductor layer of the first semiconductor layer, and the type B semiconductor of the second semiconductor layer surrounds at least a portion of the type A semiconductor layer of the first semiconductor layer. Radioactive battery. In Article 18, The above energy conversion layer comprises a first energy conversion layer and a second energy conversion layer each comprising a first type semiconductor and a second type semiconductor, wherein the first energy conversion layer surrounds at least a portion of the radiation source, and the second energy conversion layer surrounds at least a portion of the first energy conversion layer. The first semiconductor layer contacts the first energy conversion layer in at least a portion of the stacking direction, and the second semiconductor layer contacts the second energy conversion layer in at least a portion of the stacking direction. Radioactive battery. In Article 19, The first type semiconductor of the second energy conversion layer surrounds at least a portion of the second type semiconductor of the first energy conversion layer, and the second type semiconductor of the second energy conversion layer surrounds at least a portion of the first type semiconductor of the first energy conversion layer, Each of the A-type semiconductor and B-type semiconductor of the first semiconductor layer is in contact with at least a portion of the first-type semiconductor and second-type semiconductor of the first energy conversion layer, and each of the A-type semiconductor and B-type semiconductor of the second semiconductor layer is in contact with at least a portion of the first-type semiconductor and second-type semiconductor of the second energy conversion layer. Radioactive battery. In Article 20, The type A semiconductor of the first semiconductor layer has a different type from the type 1 semiconductor of the first energy conversion layer, and the type B semiconductor of the first semiconductor layer has a different type from the type 2 semiconductor of the first energy conversion layer. The type A semiconductor of the second semiconductor layer has a different type from the type 1 semiconductor of the second energy conversion layer, and the type B semiconductor of the second semiconductor layer has a different type from the type 2 semiconductor of the second energy conversion layer. Radioactive battery. A plurality of radioactive battery cells stacked in a stacking direction in one direction, comprising: an electrode layer including a first electrode, a second electrode, and an electrode insulating layer disposed between the first electrode and the second electrode; a radioactive source; and an energy conversion layer disposed between the electrode layer and the radioactive source, surrounding at least a portion of the radioactive source. An insulating layer disposed in at least some of the gaps existing between any adjacent radioactive battery cells among the plurality of radioactive battery cells, and disposed at a position corresponding to each electrode layer of the adjacent radioactive battery cell, and A connecting portion comprising a first connecting portion electrically connecting each first electrode of the adjacent radioactive battery cell and a second connecting portion electrically connecting each second electrode of the adjacent radioactive battery cell. Radioactive battery.

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