Semiconductor device and power conversion system

Abstract

A semiconductor device according to the present invention comprises a first switching element, a first temperature measurement unit provided on the first switching element, and a second temperature measurement unit provided on the first switching element.

Description

Semiconductor equipment and power conversion systems

[0001] This disclosure relates to semiconductor devices and power conversion systems.

[0002] Patent Document 1 discloses a semiconductor device as an example of a conventional semiconductor device. The semiconductor device disclosed in this document comprises a plurality of switching elements. This semiconductor device is configured as a power module that performs power conversion.

[0003] Japanese Patent Publication No. 2023-89252

[0004] [Overview] For example, in order to ensure that switching elements operate properly, it is desirable to measure the temperature of the switching elements more accurately.

[0005] One objective of this disclosure is to provide semiconductor devices and power conversion systems that have been improved from conventional designs. In particular, in view of the above circumstances, one objective of this disclosure is to provide semiconductor devices and power conversion systems that can perform temperature measurements more accurately.

[0006] A semiconductor device provided by the first aspect of this disclosure comprises a switching element, a first temperature measuring unit provided on the switching element, and a second temperature measuring unit provided on the switching element.

[0007] A semiconductor device provided by a second aspect of this disclosure comprises a switching element, a transistor element, a main connecting member connecting the switching element and the transistor element, a first temperature measuring unit provided on the switching element, and a second temperature measuring unit provided on the transistor element.

[0008] A power conversion system provided by a third aspect of this disclosure comprises a semiconductor device provided by a first or second aspect of this disclosure, and a control module for controlling the switching operation of the switching element. The control module switches the switching element to the OFF state based on a first temperature signal from the first temperature measuring unit and a second temperature signal from the second temperature measuring unit.

[0009] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0010] Figure 1 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a cross-sectional view along the line IV-IV in Figure 1. Figure 5 is a cross-sectional view along the line V-V in Figure 1. Figure 6 is a cross-sectional view along the line VI-VI in Figure 1. Figure 7 is a cross-sectional view along the line VII-VII in Figure 1. Figure 8 is a cross-sectional view along the line VIII-VIII in Figure 1. Figure 9 is a cross-sectional view along the line IX-IX in Figure 1. Figure 10 is a cross-sectional view along the line X-X in Figure 1. Figure 11 is a cross-sectional view along the line XI-XI in Figure 1. Figure 12 is a partial plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 13 is a partial plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 14 is a partially enlarged plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 15 is a partially enlarged plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 15. Figure 17 is a partially enlarged side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 18 is a circuit diagram showing a power conversion system according to the first embodiment of the present disclosure. Figure 19 is a partially enlarged plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. Figure 20 is a partially enlarged plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. Figure 21 is a plan view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 22 is a partially enlarged plan view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 23 is a partially enlarged plan view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 24 is a partially enlarged plan view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 25 is a circuit diagram showing a power conversion system according to the third embodiment of the present disclosure.

[0011] Preferred embodiments of this disclosure will be described in detail below with reference to the drawings.

[0012] The terms "first," "second," "third," etc., used in this disclosure are for identification purposes only and are not intended to assign any order to the objects.

[0013] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping with all of object B" and "object A overlapping with a part of object B." Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0014] First Embodiment: Figures 1 to 17 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A100 of this embodiment includes a plurality of first switching elements 21, a plurality of second switching elements 22, a first temperature measuring unit TS1 and a second temperature measuring unit TS2. The semiconductor device A100 may also include a support member 10A, a support member 10B, a first main conductive member 31, a second main conductive member 32, a third main conductive member 33, a plurality of sub-conducting members 41A to 42B, a plurality of main connecting members 51, 52, a plurality of connecting members 61A to 62B and a sealing resin 7.

[0015] The applications and specific configurations of the semiconductor device relating to this disclosure are not limited in any way. For example, the semiconductor device A100 performs the function of converting a DC power supply voltage applied to a first main conductive member 31 and a third main conductive member 33 into AC power using a plurality of first switching elements 21 and a plurality of second switching elements 22. The converted AC power is input from the second main conductive member 32 to a power supply target such as a motor. Such a semiconductor device A100 constitutes part of a power conversion circuit such as an inverter, which includes a half-bridge circuit composed of the first switching elements 21 and the second switching elements 22.

[0016] Figure 1 is a plan view of semiconductor device A100. Figure 2 is a bottom view of semiconductor device A100. Figure 3 is a side view of semiconductor device A100. Figure 4 is a cross-sectional view along line IV-IV in Figure 1. Figure 5 is a cross-sectional view along line V-V in Figure 1. Figure 6 is a cross-sectional view along line VI-VI in Figure 1. Figure 7 is a cross-sectional view along line VII-VII in Figure 1. Figure 8 is a cross-sectional view along line VIII-VIII in Figure 1. Figure 9 is a cross-sectional view along line IX-IX in Figure 1. Figure 10 is a cross-sectional view along line X-X in Figure 1. Figure 11 is a cross-sectional view along line XI-XI in Figure 1. Figure 12 is a partial plan view of semiconductor device A100. Figure 13 is a partial plan view of semiconductor device A100. Figure 14 is a partially enlarged plan view of semiconductor device A100. Figure 15 is a partially enlarged plan view of semiconductor device A100. Figure 16 is a cross-sectional view along the line XVI-XVI in Figure 15. Figure 17 is a partially enlarged side view showing semiconductor device A100.

[0017] In these figures, for example, the z-direction is an example of the thickness direction of this disclosure. Also, for example, the first side in the z-direction is referred to as the z1 side, and the second side opposite to the first side in the z-direction is referred to as the z2 side. Also, for example, the x-direction is orthogonal to the z-direction. Also, for example, the first side in the x-direction is referred to as the x1 side, and the second side opposite to the x1 side is referred to as the x2 side. Also, for example, the y-direction is orthogonal to both the z-direction and the x-direction. Also, for example, the first side in the y-direction is referred to as the y1 side, and the second side opposite to the y1 side is referred to as the y2 side.

[0018] In Figure 1, the sealing resin 7 is shown by a dashed line. In Figures 12 to 17, the sealing resin 7 is omitted.

[0019] In this embodiment, the support member 10A includes a first conductive layer 1A, an insulating layer 101, a support layer 102, and a heat dissipation layer 103. However, the specific configuration of the support member 10A is not limited in any way. In this embodiment, for example, the insulating layer 101, the support layer 102, and the heat dissipation layer 103 may constitute a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support member 10A is covered with sealing resin 7 except for a part of the heat dissipation layer 103. The support member 10A is located on the x1 side in the x direction.

[0020] The first conductive layer 1A has a first main surface 11A. The first main surface 11A faces the z1 side in the z direction. In the illustrated example, the first main surface 11A is a flat surface. The first conductive layer 1A is a conductive material, and for example, it contains Cu (copper).

[0021] The insulating layer 101 is located on the z2 side relative to the first conductive layer 1A in the z direction. The insulating layer 101 includes a portion located between the support layer 102 and the heat dissipation layer 103 in the z direction. The insulating layer 101 may be made of a material with higher thermal conductivity. The insulating layer 101 may be, for example, a ceramic containing aluminum nitride (AlN). The thickness of the insulating layer 101 is thinner than the thickness of the first conductive layer 1A.

[0022] The support layer 102 is located between the insulating layer 101 and the first conductive layer 1A in the z-direction. The composition of the support layer 102 includes, for example, Cu (copper). Viewed in the z-direction, the support layer 102 is surrounded by the periphery of the insulating layer 101. The support layer 102 is joined to the first conductive layer 1A, for example, by solder. Note that the support layer 102 of the support member 10A may also serve as the first conductive layer 1A.

[0023] The heat dissipation layer 103 is located in the z-direction on the opposite side of the support layer 102 from the insulating layer 101. A portion of the heat dissipation layer 103 is exposed from the sealing resin 7. When the semiconductor device A100 is used, a heat sink (not shown), for example, is bonded to the heat dissipation layer 103. The composition of the heat dissipation layer 103 includes Cu (copper). Viewed in the z-direction, the heat dissipation layer 103 is surrounded by the periphery of the insulating layer 101.

[0024] In this embodiment, the support member 10B includes a second conductive layer 1B, an insulating layer 101, a support layer 102, and a heat dissipation layer 103. However, the specific configuration of the support member 10B is not limited in any way. In this embodiment, for example, the insulating layer 101, the support layer 102, and the heat dissipation layer 103 have the same configuration as the insulating layer 101, the support layer 102, and the heat dissipation layer 103 of the support member 10A, and may constitute a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support member 10B is covered with sealing resin 7 except for a part of the heat dissipation layer 103. The support member 10B is located on the x2 side in the x direction with respect to the support member 10A.

[0025] The second conductive layer 1B has a second main surface 11B. The second main surface 11B faces the z1 side in the z direction. In the illustrated example, the second main surface 11B is a flat surface. The second conductive layer 1B is a conductive material, and for example, it contains Cu (copper). The support member 10B may have a configuration that does not include the second conductive layer 1B. In this case, the support layer 102 may also perform the function of the support member 10B.

[0026] The first main conductive member 31 includes a first main terminal 311 and a first pillow material 319. As shown in Figures 1, 2, and 6, the first main terminal 311 protrudes to the x1 side in the x direction and has a portion exposed from the sealing resin 7. The first main terminal 311 is located at a position shifted to the x1 side in the x direction relative to the first conductive layer 1A. The first main terminal 311 is also located at a position shifted to the y1 side in the y direction relative to the first conductive layer 1A. The first main terminal 311 is located to the z1 side in the z direction relative to the first main surface 11A and is away from the first conductive layer 1A. When viewed in the z direction, the first main terminal 311 overlaps with the first main surface 11A. The composition of the first main terminal 311 includes Cu (copper). The first main terminal 311 is provided with a first mounting hole 3111. The first mounting hole 3111 penetrates the first main terminal 311 in the z direction.

[0027] As shown in Figures 1 and 6, the first bolster material 319 is interposed between the first conductive layer 1A and the first main terminal 311. The composition of the first bolster material 319 includes, for example, Cu (copper). The first bolster material 319 is electrically joined to the first main surface 11A of the first conductive layer 1A and the first main terminal 311. The method of electrical joining is not limited in any way, and methods using conductive joining materials such as solder, welding, etc., may be appropriately adopted.

[0028] The second main conductive member 32 includes a second main terminal 321 and a second pillow material 329. As shown in Figures 1 to 6, the second main terminal 321 protrudes to the x2 side in the x direction and has a portion exposed from the sealing resin 7. The second main terminal 321 is positioned shifted to the x2 side in the x direction relative to the second conductive layer 1B. The center position of the second main terminal 321 in the y direction substantially coincides with the center position of the second conductive layer 1B in the y direction. The second main terminal 321 is positioned to the z1 side in the z direction relative to the second main surface 11B and is away from the second conductive layer 1B. The second main terminal 321 overlaps the second main surface 11B when viewed in the z direction. The composition of the second main terminal 321 includes Cu (copper). The second main terminal 321 is provided with a second mounting hole 3211. The second mounting hole 3211 penetrates the second main terminal 321 in the z direction.

[0029] As shown in Figures 1 and 4 to 6, the second support material 329 is interposed between the second conductive layer 1B and the second main terminal 321. The composition of the second support material 329 includes Cu (copper). The second support material 329 is electrically bonded to the second main surface 11B of the second conductive layer 1B and the second main terminal 321. The method of electrical bonding is not limited in any way, and methods using conductive bonding materials such as solder, welding, etc., may be appropriately adopted.

[0030] As shown in Figures 1, 4 to 7, and 12, the multiple first switching elements 21 are bonded to the first main surface 11A of the first conductive layer 1A. The multiple first switching elements 21 may all be the same element or may be different elements from one another. Each of the multiple first switching elements 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, each of the multiple first switching elements 21 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor), or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor).

[0031] In the description of the semiconductor device A100, the plurality of first switching elements 21 are n-channel type and vertical structure MOSFETs. The plurality of first switching elements 21 include a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). The plurality of first switching elements 21 are arranged along the y direction.

[0032] As shown in Figures 1, 5, 6, 12, 14, and 17, the first switching element 21 has a second electrode 211, a first electrode 212, a third electrode 213, and a fourth electrode 214.

[0033] The second electrode 211 faces the first main surface 11A of the first conductive layer 1A. A current corresponding to the power before it is converted by the first switching element 21 can flow through the second electrode 211. The second electrode 211 corresponds to the drain electrode of the first switching element 21. The second electrode 211 is conductively bonded to the first main surface 11A via a conductive bonding layer 29. As a result, the second electrodes 211 of the multiple first switching elements 21 are electrically connected to the first main conductive member 31. The conductive bonding layer 29 is, for example, solder. Alternatively, the conductive bonding layer 29 may be a sintered metal containing silver or the like.

[0034] The first electrode 212 is located on the z1 side, opposite to the second electrode 211 in the z direction. A current corresponding to the power converted by the first switching element 21 flows through the first electrode 212. The first electrode 212 corresponds to the source electrode of the first switching element 21.

[0035] The third electrode 213 is located on the same side (z1 side) as the first electrode 212 in the z direction. When viewed in the z direction, the third electrode 213 is located on the y1 side in the y direction relative to the first electrode 212. A gate voltage for driving the first switching element 21 is applied to the third electrode 213. The third electrode 213 corresponds to the gate electrode of the first switching element 21. As shown in Figure 14, when viewed in the z direction, the area of ​​the third electrode 213 is smaller than the area of ​​the first electrode 212.

[0036] The fourth electrode 214 is located on the same side (z1 side) as the first electrode 212 in the z direction. When viewed in the z direction, the fourth electrode 214 is located on the y1 side of the y direction relative to the first electrode 212. In the illustrated example, two fourth electrodes 214 are located on both sides of the third electrode 213 in the x direction. The fourth electrode 214 is conductive with the first electrode 212 in the first switching element 21 and is a so-called source sense electrode. As shown in Figure 14, when viewed in the z direction, the area of ​​the fourth electrode 214 is smaller than the area of ​​the first electrode 212.

[0037] As shown in FIGS. 14 to 16, among the plurality of first switching elements 21, the first switching element 21 located on the y1 side in the y direction has, in addition to the switching function region such as the MOSFET described above, a first temperature measurement element 215 provided thereon. The first temperature measurement element 215 is an example of the first temperature measurement unit TS1 of the present disclosure. The first temperature measurement element 215 is disposed on the surface side of the first switching element 21. The first temperature measurement element 215 is independent of the switching function region and does not directly contribute to the switching operation by the switching function region. The first temperature measurement element 215 includes, for example, a first temperature measurement region 2150, a first anode electrode 2151, and a first cathode electrode 2152. The first temperature measurement region 2150 is composed of, for example, a substrate body 2160, a p-type region 2161, a gate insulating film 2162, a diode portion 2163, an interlayer insulating film 217, etc., which are laminated in sequence.

[0038] FIG. 15 is a schematic plan view showing the structure of the first temperature measurement region 2150 of the first switching element 21. FIG. 16 is a cross-sectional view taken along the XVI-XVI line of FIG. 15.

[0039] A p-type region 2161 is formed on the surface portion of the substrate body 2160. The p-type region 2161 may be an impurity region having the same conductivity type as the p-type body region included in the switching function region such as a MOSFET, and its p-type impurity concentration and depth may also be the same as those of the p-type body region. A gate insulating film 2162 is formed on the surface of the substrate body 2160. A diode portion 2163 (pn diode) is formed on the gate insulating film 2162. The diode portion 2163 faces the substrate body 2160 with the gate insulating film 2162 interposed therebetween. For example, the entire diode portion 2163 may face a single impurity region (in this embodiment, the p-type region 2161) of the substrate body 2160.

[0040] The diode portion 2163 is, for example, composed of a single-layer polysilicon layer. The diode portion 2163 composed of a polysilicon layer may be formed in the same layer as the third electrode 213, for example, by being formed in the same process as the third electrode 213. Of course, the polysilicon layer may be formed in a different process from the third electrode 213, or may have a different thickness from the third electrode 213.

[0041] The diode portion 2163 includes a p-type region 2164 and an n-type region 2165 surrounding the p-type region 2164. + As long as the p-type region 2164 is surrounded by the n-type region 2165, since the p-type region 2164 and the n-type region 2165 do not overlap in plan view, no separate wiring or the like is required, and contacts can be easily made to either the p-type region 2164 or the n-type region 2165. + type region 2165. + type region 2165. + type region 2165.

[0042] The p-type region 2164 and the n + type region 2165 may each be formed so as to reach from the front surface to the back surface of the polysilicon layer, or may be selectively formed in the surface portion of the polysilicon layer (not shown). Note that the p-type region 2164 does not have to be surrounded by the n + type region 2165. For example, the p-type region 2164 and the n + type region 2165 may be formed adjacent to each other and have a non-shared periphery in part.

[0043] The diode portion 2163 may further include a p + type contact region 2166 and a p-type outer peripheral region 2167. The p + type contact region 2166 is formed in an inner region of the p-type region 2164 with a gap from the periphery of the p-type region 2164, and the p-type outer peripheral region 2167 may be formed so as to surround the n + type region 2165.

[0044] The diode portion 2163 is covered by the interlayer insulating film 217 on the substrate body 2160. The first anode electrode 2151 is connected to the interlayer insulating film 217 via the contact hole 2171, acting as the anode electrode. + It is connected to the type contact region 2166. The first cathode electrode 2152 is connected as a cathode electrode through the contact hole 2172 of the interlayer insulating film 217. + It is connected to the type region 2165. The first anode electrode 2151 and the first cathode electrode 2152 connected to both ends of the diode section 2163 are formed separately from the first electrode 212 and the third electrode 213, as described above. Therefore, the diode section 2163 is electrically independent from the switching function region.

[0045] Polysilicon can be easily formed in the desired shape and position using already established semiconductor manufacturing technologies. Therefore, the diode portion 2163 can be formed near the switching function region and near the surface of the substrate body 2160, which is a heat-generating area, allowing for highly accurate detection of temperature changes in the substrate body 2160. For example, by applying a constant current to the diode portion 2163, the forward voltage V of the diode portion 2163 can be detected. F By monitoring this, temperature changes of the substrate body 2160 can be detected. For example, a constant current of 1 μA is applied, and the forward voltage V F You just need to monitor that. The current should be a constant current in the range of 1 μA to 100 μA.

[0046] The first cathode electrode 2152 integrally includes a substantially annular contact portion 2168, which is partially open, and a linear lead portion 2181 extending from the contact portion 2168, on the interlayer insulating film 217. The contact portion 2168 surrounds the p-type region 2164 in a plan view. The contact hole 2172 is formed in an annular shape, partially open, along the contact portion 2168.

[0047] The first anode electrode 2151 integrally includes a contact portion 2169 surrounded by the contact portion 2168 of the second electrode 11 on the interlayer insulating film 217, and a line-shaped lead portion 2182 extending from the contact portion 2169. The contact portion 2169 is p + It is positioned on the type contact area 2166. The contact hole 2171 is formed to overlap the lower part of the contact portion 2169.

[0048] As shown in Figures 1, 4 to 6, and 13, the multiple second switching elements 22 are bonded to the second main surface 11B of the second conductive layer 1B. The multiple second switching elements 22 may be the same as the multiple first switching elements 21, or they may be different. Each of the multiple second switching elements 22 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor), or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor).

[0049] In this embodiment, the plurality of second switching elements 22 are n-channel type and vertically structured MOSFETs. The plurality of second switching elements 22 include a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC). The plurality of second switching elements 22 are arranged along the y-direction.

[0050] The multiple second switching elements 22 have a sixth electrode 221, a fifth electrode 222, a seventh electrode 223, and an eighth electrode 224.

[0051] The sixth electrode 221 faces the second main surface 11B of the second conductive layer 1B. A current corresponding to the power before it is converted by the second switching element 22 can flow through the sixth electrode 221. The sixth electrode 221 corresponds to the drain electrode of the second switching element 22. The sixth electrode 221 is conductively bonded to the second main surface 11B via the conductive bonding layer 29. Therefore, the sixth electrodes 221 of the multiple second switching elements 22 are electrically connected to the second main conductive member 32.

[0052] The fifth electrode 222 is located on one side opposite to the sixth electrode 221 in the z direction. A current corresponding to the power converted by the second switching element 22 can flow through the fifth electrode 222. The fifth electrode 222 corresponds to the source electrode of the second switching element 22.

[0053] The seventh electrode 223 is located on the same side (z1 side) as the fifth electrode 222 in the z direction. When viewed in the z direction, the seventh electrode 223 is located on the y2 side in the y direction relative to the fifth electrode 222. A gate voltage for driving the second switching element 22 can be applied to the seventh electrode 223. The seventh electrode 223 corresponds to the gate electrode of the second switching element 22. As shown in Figure 13, when viewed in the z direction, the area of ​​the seventh electrode 223 is smaller than the area of ​​the fifth electrode 222.

[0054] The eighth electrode 224 is located on the same side (z1 side) as the fifth electrode 222 in the z direction. When viewed in the z direction, the eighth electrode 224 is located on the y2 side of the y direction relative to the fifth electrode 222. In the illustrated example, two eighth electrodes 224 are located on both sides of the seventh electrode 223 in the x direction. The eighth electrode 224 is conductive with the fifth electrode 222 in the second switching element 22 and is a so-called source sense electrode. As shown in Figure 13, when viewed in the z direction, the area of ​​the eighth electrode 224 is smaller than the area of ​​the fifth electrode 222.

[0055] As shown in Figures 1, 2, 4 to 7, and 12, the third main conductive member 33 includes an extension 332 and a third main terminal 331. The third main conductive member 33 is made of a conductive material, including, for example, Cu (copper).

[0056] The third main terminal 331 has a portion that protrudes from the sealing resin 7 towards the x1 side in the x direction. The third main terminal 331 is located towards the y2 side in the y direction relative to the first main terminal 311. The third main terminal 331 is located at a position shifted towards the x1 side in the x direction relative to the second conductive layer 1B. The third main terminal 331 is located towards the z1 side in the z direction relative to the first main surface 11A and is away from the first conductive layer 1A. When viewed in the z direction, the third main terminal 331 overlaps the first main surface 11A. The third main terminal 331 is provided with a third mounting hole 3311. The third mounting hole 3311 penetrates the third main terminal 331 in the z direction.

[0057] The extension portion 332 extends from the third main terminal 331 toward the x2 direction in the x-direction and is covered by the sealing resin 7. The extension portion 332 in this embodiment includes a first portion 3321, a second portion 3322, and a third portion 3323.

[0058] In the illustrated example, as shown in Figures 4 and 5, the distance of the first part 3321 from the first main surface 11A in the z direction is smaller than the distance from the first main surface 11A to the third main terminal 331 in the z direction. As shown in Figures 1, 2, 4 to 7, the first part 3321 is located between a plurality of first switching elements 21 and a plurality of second switching elements 22 in the x direction.

[0059] The shape of the first part 3321 is not limited in any way, and in this embodiment, it is a shape that extends in the y direction, for example, a flat strip. In the illustrated example, the first part 3321 overlaps with the first main surface 11A (first conductive layer 1A) when viewed in the z direction. In the illustrated example, the x2 side edge of the first part 3321 in the x direction is located on the x1 side in the x direction than the x2 side edge of the first main surface 11A in the x direction.

[0060] The second part 3322 is connected to the third main terminal 331. The second part 3322 extends from the third main terminal 331 along the x-direction towards the x2 side in the x-direction. The shape of the second part 3322 is not limited in any way and can be, for example, a flat strip. The second part 3322 is located on the y2 side in the y-direction with respect to the plurality of first switching elements 21.

[0061] The third part 3323 is interposed between the first part 3321 and the second part 3322. Due to the presence of the third part 3323, the extension 332 has a bent shape when viewed in the y direction. In the illustrated example, the third part 3323 is part of the x1 side edge in the x direction of the first part 3321 and is connected to the part closer to the y2 side edge in the y direction.

[0062] The multiple subconductive members 41A to 42B are electrically connected to one of the multiple first switching elements 21 and the multiple second switching elements 22. As shown in Figures 1 to 7 and Figures 12 to 14, the multiple subconductive members 41A to 42B of this embodiment each extend in the y direction when viewed in the z direction and are arranged in the x direction. The multiple subconductive members 41A to 42B are made of a conductive material, including, for example, Cu (copper). In the following description, the multiple subconductive members 41A to 42B will be distinguished as the first subconductive member 41A, the second subconductive member 42A, the third subconductive member 43A, the fourth subconductive member 44A, the fifth subconductive member 45A, the sixth subconductive member 46A, the seventh subconductive member 41B, and the eighth subconductive member 42B.

[0063] The first subconducting member 41A is electrically connected to the third electrode 213 of the first switching element 21. The first subconducting member 41A is located between the third subconducting member 43A and the fourth subconducting member 44A in the x-direction. The first subconducting member 41A has a first sub-terminal portion 411A and a first sub-wiring portion 412A. The first sub-terminal portion 411A protrudes from the sealing resin 7 and, in the illustrated example, extends towards the z1 side in the z-direction. The first sub-wiring portion 412A is covered by the sealing resin 7. The shape and size of the first sub-wiring portion 412A are not limited. In the illustrated example, the first sub-wiring portion 412A overlaps with the first conductive layer 1A when viewed in the z-direction. The first sub-wiring portion 412A has a portion facing the x1 side in the x-direction with respect to the plurality of first switching elements 21.

[0064] The second subconducting member 42A is electrically connected to the fourth electrode 214 of the first switching element 21. The second subconducting member 42A is located on the x1 side in the x direction relative to the first subconducting member 41A. The second subconducting member 42A has a second subterminal portion 421A and a second subwiring portion 422A. The second subterminal portion 421A protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The second subwiring portion 422A is covered by the sealing resin 7. The shape and size of the second subwiring portion 422A are not limited. In the illustrated example, the second subwiring portion 422A overlaps with the first conductive layer 1A when viewed in the z direction. The second subwiring portion 422A has a portion facing the x1 side in the x direction relative to the plurality of first switching elements 21.

[0065] The third subconducting member 43A is electrically connected to the first anode electrode 2151. The third subconducting member 43A is located on the x2 side in the x direction relative to the first subconducting member 41A. The third subconducting member 43A has a third subterminal portion 431A and a third subwiring portion 432A. The third subterminal portion 431A protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The third subwiring portion 432A is covered by the sealing resin 7. The shape and size of the third subwiring portion 432A are not limited. In the illustrated example, the third subwiring portion 432A is located on the y1 side in the y direction relative to the first conductive layer 1A and the support member 10A.

[0066] The fourth auxiliary conductive member 44A is electrically connected to the first cathode electrode 2152. The fourth auxiliary conductive member 44A is located on the x1 side in the x direction relative to the second auxiliary conductive member 42A. The fourth auxiliary conductive member 44A has a fourth auxiliary terminal portion 441A and a fourth auxiliary wiring portion 442A. The fourth auxiliary terminal portion 441A protrudes from the sealing resin 7 and, in the illustrated example, extends on the z1 side in the z direction. The fourth auxiliary wiring portion 442A is covered by the sealing resin 7. The shape and size of the fourth auxiliary wiring portion 442A are not limited. In the illustrated example, the fourth auxiliary wiring portion 442A is located on the y1 side in the y direction relative to the first conductive layer 1A and the support member 10A.

[0067] The fifth auxiliary conductive member 45A is electrically connected to the first electrode 212 of the first switching element 21. The fifth auxiliary conductive member 45A is located on the x1 side of the x2 side edge of the first conductive layer 1A in the x direction. The fifth auxiliary conductive member 45A is located on the x2 side in the x direction relative to the third auxiliary conductive member 43A. The fifth auxiliary conductive member 45A has a fifth auxiliary terminal portion 451A and a fifth auxiliary wiring portion 452A. The fifth auxiliary terminal portion 451A protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The fifth auxiliary wiring portion 452A is covered by the sealing resin 7. The shape and size of the fifth auxiliary wiring portion 452A are not limited. In the illustrated example, the fifth auxiliary wiring portion 452A is located on the y1 side in the y direction relative to the first conductive layer 1A and the support member 10A.

[0068] The sixth subconducting member 46A is electrically connected to the first electrode 212 of the first switching element 21. The sixth subconducting member 46A is located on the x1 side in the x direction relative to the fifth subconducting member 45A. The sixth subconducting member 46A has a sixth subterminal portion 461A and a sixth subwiring portion 462A. The sixth subterminal portion 461A protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The sixth subwiring portion 462A is covered by the sealing resin 7. The shape and size of the sixth subwiring portion 462A are not limited. In the illustrated example, the sixth subwiring portion 462A is located on the y1 side in the y direction relative to the first conductive layer 1A and the support member 10A.

[0069] The seventh subconducting member 41B is electrically connected to the seventh electrode 223 of the second switching element 22. The seventh subconducting member 41B has a seventh subterminal portion 411B and a seventh subwiring portion 412B. The seventh subterminal portion 411B protrudes from the sealing resin 7 and, in the illustrated example, extends towards the z1 side in the z direction. The seventh subwiring portion 412B is covered by the sealing resin 7. The shape and size of the seventh subwiring portion 412B are not limited. In the illustrated example, the seventh subwiring portion 412B overlaps with the second conductive layer 1B when viewed in the z direction. The seventh subwiring portion 412B has a portion that faces the x2 side in the x direction with respect to the plurality of second switching elements 22.

[0070] The eighth subconducting member 42B is electrically connected to the eighth electrode 224 of the second switching element 22. The eighth subconducting member 42B is located on the x2 side in the x direction relative to the seventh subconducting member 41B. The eighth subconducting member 42B has an eighth subterminal portion 421B and an eighth subwiring portion 422B. The eighth subterminal portion 421B protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The eighth subwiring portion 422B is covered by the sealing resin 7. The shape and size of the eighth subwiring portion 422B are not limited. In the illustrated example, the eighth subwiring portion 422B overlaps with the second conductive layer 1B when viewed in the z direction. The eighth subwiring portion 422B has a portion facing the x2 side in the x direction relative to the plurality of second switching elements 22.

[0071] As shown in Figures 1, 5, 12, 13, and 14, the multiple main connecting members 51 individually connect the multiple first switching elements 21 and the second conductive layer 1B. The main connecting members 51 are connected to the first electrode 212 of the first switching element 21 and the second main surface 11B of the second conductive layer 1B. The specific configuration of the main connecting members 51 is not limited in any way, and can be, for example, wires and ribbons mainly composed of Cu (copper), Al (aluminum), and alloys thereof. In the example shown below, the main connecting member 51 is a wire. In this example, the main connecting member 51 is mainly composed of Cu (copper). The diameter Da of the main connecting member 51 is not limited in any way, and can be, for example, 150 μm or more and 400 μm or less. The number of multiple main connecting members 51 is not limited in any way, and in the illustrated example, two main connecting members 51 are connected to the first electrode 212 of one first switching element 21.

[0072] The main connecting member 51 has a connecting portion 511, a connecting portion 512, and a loop portion 510. The connecting portion 511 is the portion connected to the first electrode 212. In this embodiment, the connecting portion 511 corresponds to the first connecting portion of the present disclosure. In the illustrated example, the connecting portions 511 of two main connecting members 51 are aligned in the x direction on one first electrode 212. The connecting portion 512 is the portion connected to the second main surface 11B of the second conductive layer 1B. In this embodiment, the connecting portion 512 corresponds to the second connecting portion of the present disclosure. In the illustrated example, the connecting portions 512 of two main connecting members 51 connected to one first electrode 212 are aligned in the x direction. The loop portion 510 is connected to the connecting portion 511 and the connecting portion 512 and has a curved shape that is convex towards the z1 side in the z direction. As shown in Figures 5 and 17, in this embodiment, the loop portion 510 straddles the first portion 3321 of the extension portion 332 of the third main conductive member 33.

[0073] As shown in Figures 1, 4, 6, 12, and 13, the multiple main connecting members 52 individually connect the multiple second switching elements 22 and the third main conductive member 33. The main connecting members 52 are connected to the fifth electrode 222 of the second switching element 22 and the first part 3321 of the extension 332 of the third main conductive member 33. The specific configuration of the multiple main connecting members 52 is not limited and can be a wire and ribbon or a plate material mainly composed of a first main metal. In the example shown below, the main connecting member 52 is a wire. The first main metal includes, for example, Cu (copper), Al (aluminum), and alloys thereof. In this example, the first main metal of the main connecting member 52 is Cu (copper). The diameter Da of the main connecting member 52 is not limited and can be, for example, 150 μm or more and 400 μm or less. The number of main connecting members 52 is not limited in any way; in the illustrated example, two main connecting members 52 are connected to the fifth electrode 222 of one second switching element 22.

[0074] The main connecting member 52 has a connecting portion 521, a connecting portion 522, and a loop portion 520. The connecting portion 521 is the portion connected to the fifth electrode 222. In this embodiment, the connecting portion 521 corresponds to the first connecting portion of the present disclosure. In the illustrated example, the connecting portions 521 of two main connecting members 52 are aligned in the x direction on one fifth electrode 222. The connecting portion 522 is the portion connected to the first portion 3321 of the extension portion 332 of the third main conductive member 33. In this embodiment, the connecting portion 522 corresponds to the second connecting portion of the present disclosure. In the illustrated example, the connecting portions 522 of two main connecting members 52 connected to one fifth electrode 222 are aligned in the x direction. The loop portion 520 is connected to the connecting portion 521 and the connecting portion 522 and has a curved shape that is convex towards the z1 side in the z direction.

[0075] Multiple connecting members 61A to 65A are electrically connected to one of the multiple first switching elements 21 and the multiple second switching elements 22.

[0076] As shown in Figures 1, 12, and 14, the connecting member 61A provides electrical conductivity between the first switching element 21 and the first sub-conducting member 41A. In the illustrated example, multiple connecting members 61A are connected to the third electrodes 213 of the multiple first switching elements 21 and the first sub-wiring section 412A of the first sub-conducting member 41A. The specific configuration of the connecting member 61A is not limited in any way and may include wires and ribbons mainly composed of Cu (copper), Al (aluminum), Ni (nickel), etc., and alloys thereof. In this example, the connecting member 61A includes Al (aluminum). The thickness of the connecting member 61A is not limited in any way and may include, for example, a width of about 150 μm when viewed in the z direction.

[0077] As shown in Figures 1, 12, and 14, the connecting member 62A provides electrical conductivity between the first switching element 21 and the second subconducting member 42A. In the illustrated example, multiple connecting members 62A are connected to the fourth electrodes 214 of the multiple first switching elements 21 and the second subwiring section 422A of the second subconducting member 42A. The specific configuration of the connecting member 62A is not limited and can be a wire or ribbon mainly composed of a fourth submetal. The fourth submetal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the fourth submetal of the connecting member 62A is Cu (copper). The thickness of the connecting member 62A is not limited and, for example, its width when viewed in the z direction is about 150 μm.

[0078] As shown in Figures 1 and 13, the connecting member 61B provides electrical conductivity between the second switching element 22 and the seventh subconducting member 41B. In the illustrated example, multiple connecting members 61B are connected to the seventh electrodes 223 of the multiple second switching elements 22 and the seventh subwiring section 412B of the seventh subconducting member 41B. The specific configuration of the connecting member 61B is not limited and can be a wire or ribbon mainly composed of the seventh submetal. The seventh submetal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the seventh submetal of the connecting member 61B is Al (aluminum). The thickness of the connecting member 61B is not limited and, for example, its width when viewed in the z direction is about 150 μm.

[0079] As shown in Figures 1, 13, and 15, the connecting member 62B provides electrical conductivity between the second switching element 22 and the eighth subconducting member 42B. In the illustrated example, multiple connecting members 62B are connected to the eighth electrodes 224 of the multiple second switching elements 22 and the eighth subwiring section 422B of the eighth subconducting member 42B. The specific configuration of the connecting member 62B is not limited and can be a wire or ribbon mainly composed of the eighth submetal. The eighth submetal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the eighth submetal of the connecting member 62B is Cu (copper). The thickness of the connecting member 62B is not limited; for example, its width when viewed in the z direction is about 150 μm.

[0080] As shown in Figures 1, 12, and 14, the first connecting member 63A connects the first switching element 21 located furthest to the y1 side in the y direction among the plurality of first switching elements 21 to the third subconducting member 43A. In the illustrated example, the first connecting member 63A is connected to the first anode electrode 2151 and the third sub-wiring portion 432A of the third subconducting member 43A. The specific configuration of the first connecting member 63A is not limited in any way, and may include wires and ribbons mainly composed of Cu (copper), Al (aluminum), Ni (nickel), etc., and alloys thereof. In this example, the connecting member 61A contains Al (aluminum). The thickness of the connecting member 61A is not limited in any way, and may include, for example, a width of about 150 μm when viewed in the z direction.

[0081] As shown in Figures 1, 12, and 14, the second connecting member 64A connects the first switching element 21 located furthest to the y1 side in the y direction among the plurality of first switching elements 21 to the fourth subconducting member 44A. In the illustrated example, the second connecting member 64A is connected to the first cathode electrode 2152 and the fourth sub-wiring portion 442A of the fourth subconducting member 44A. The specific configuration of the second connecting member 64A is not limited in any way, and may include wires and ribbons mainly composed of Cu (copper), Al (aluminum), Ni (nickel), etc., and alloys thereof. In this example, the second connecting member 64A includes Al (aluminum). The thickness of the second connecting member 64A is not limited in any way, and may include, for example, a width of about 150 μm when viewed in the z direction.

[0082] The third connecting member 65A and the fourth connecting member 66A are used to measure the temperature of at least one of the multiple first switching elements 21 by means of a thermocouple. The third connecting member 65A and the fourth connecting member 66A constitute the second temperature measuring unit TS2 of this embodiment. In this embodiment, the object to be measured by the third connecting member 65A and the fourth connecting member 66A is the first switching element 21 located furthest to the y1 side in the y direction among the multiple first switching elements 21. The third connecting member 65A and the fourth connecting member 66A may have the same material, connection configuration, etc., or they may be different.

[0083] As shown in Figures 1, 12, 14, and 17, the third connecting member 65A provides electrical conductivity between the first switching element 21 and the third sub-conducting member 43A. In the illustrated example, the third connecting member 65A is connected to the first electrode 212 of the first switching element 21 and the third sub-wiring section 432A of the third sub-conducting member 43A. The specific configuration of the third connecting member 65A is not limited and can be a wire or ribbon mainly composed of a first metal. The first metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the first metal of the third connecting member 65A is constantan, which is an example of an alloy of Cu (copper) and Ni (nickel). The thickness of the third connecting member 65A is not limited and can be, for example, 10 μm or more and 200 μm or less, and for example, about 150 μm.

[0084] The third connecting member 65A has a first connecting portion 651A. The first connecting portion 651A is the portion connected to the first electrode 212 of the first switching element 21. The position on the first electrode 212 to which the first connecting portion 651A is connected is not limited in any way. In the illustrated example, the first connecting portion 651A is located on the first electrode 212 on the x1 side in the x direction and on the y1 side in the y direction with respect to the two connecting portions 511. The first connecting portion 651A is located on the x2 side in the x direction with respect to the first temperature measuring element 215. The first connecting portion 651A is adjacent to the first temperature measuring portion TS1. This position is between one corner of the first electrode 212 and the connecting portion 511.

[0085] As shown in Figures 1, 12, 14, and 17, the fourth connecting member 66A connects the first switching element 21 and the fourth auxiliary conductive member 44A. In the illustrated example, the fourth connecting member 66A connects the first electrode 212 of the first switching element 21 and the fourth auxiliary wiring portion 442A of the fourth auxiliary conductive member 44A. The specific configuration of the fourth connecting member 66A is not limited in any way and can be a wire or ribbon mainly composed of a second metal. The second metal is a metal with a different thermoelectric power from the first metal, and includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the second metal of the fourth connecting member 66A is Cu (copper). When the first metal is constantan and the second metal is Cu (copper), the first metal is harder than the second metal. The thickness of the fourth connecting member 66A is not limited in any way, and is, for example, 200 μm or more and 500 μm or less, and is, for example, about 400 μm.

[0086] The fourth connecting member 66A has a second connecting portion 661A. The second connecting portion 661A may be connected to the first connecting portion 651A or it may be separated from it. In order to measure the temperature of the first switching element 21 more accurately by the principle of thermocouples, it is preferable that the second connecting portion 661A is closer to the first connecting portion 651A, and more preferably it is in contact with the first connecting portion 651A. In the illustrated example, the second connecting portion 661A is connected to the first connecting portion 651A. The second connecting portion 661A may or may not be in contact with the first electrode 212. The second connecting portion 661A is electrically connected to the first electrode 212 at least through the first connecting portion 651A. In the illustrated example, the first connecting portion 651A and the second connecting portion 661A are located between the first temperature measuring element 215 and the connecting portion 511 when viewed in the z direction.

[0087] As shown in Figures 1 to 11, the sealing resin 7 covers a portion of the support member 10A, a portion of the support member 10Bb, a plurality of first switching elements 21, a plurality of second switching elements 22, a plurality of main connecting members 51, 52, a third connecting member 65A, a fourth connecting member 66A, a seventh connecting member 65B, an eighth connecting member 66B, and a plurality of connecting members 61A, 64, 67, 68. Furthermore, the sealing resin 7 covers a portion of each of the first main conductive member 31, the second main conductive member 32, and the third main conductive member 33, and a portion of each of the plurality of subconducting members 41 to the eighth subconducting members 42B. The sealing resin 7 has electrical insulating properties. The sealing resin 7 may be, for example, a material containing black epoxy resin. The sealing resin 7 has a top surface 71, a bottom surface 72, a first side surface 73, a second side surface 74, a third side surface 75, and a fourth side surface 76.

[0088] The top surface 71 is the surface facing z1 in the z direction. The bottom surface 72 is the surface facing z2 in the z direction.

[0089] The first side surface 73 is the surface facing the x1 side in the x direction. The first main terminal 311 and the third main terminal 331 protrude from the first side surface 73. The second side surface 74 is the surface facing the x2 side in the x direction. The second main terminal 321 protrudes from the second side surface 74.

[0090] The third side surface 75 is the surface facing y1 in the y direction. The fourth side surface 76 is the surface facing y2 in the y direction. Multiple auxiliary conductive members 41 to 48 protrude from the third side surface 75.

[0091] Figure 18 shows an example of the circuit configuration of the power conversion system B100. The power conversion system B100 includes a semiconductor device A100 and a control module 8.

[0092] The control module 8 is a module that controls the switching operation of the semiconductor device A100. The control module 8 may include a drive control circuit 81, a first overheating protection circuit 82A, a second overheating protection circuit 82B, a first temperature detection circuit 83A, a second temperature detection circuit 83B, and a thermistor 85. The control module 8 may be, for example, a configuration in which multiple electronic elements are mounted on a substrate, and may be positioned on the z1 side in the z direction relative to the semiconductor device A100.

[0093] The drive control circuit 81 is a circuit that controls the switching operation of the first switching element 21 and the second switching element 22. The drive control circuit 81 outputs a gate drive signal to the third electrode 213 of the first switching element 21 and the seventh electrode 223 of the second switching element 22. The first switching element 21 and the second switching element 22 are switched ON / OFF depending on the presence or absence of the gate drive signal.

[0094] The first temperature detection circuit 83A is a circuit that detects the temperature of the first switching element 21 based on the output from the first temperature measuring unit TS1. The first temperature detection circuit 83A outputs a first temperature signal correlated with the temperature of the first switching element 21 to the first overheating protection circuit 82A, for example, in response to the output from the first temperature measuring unit TS1.

[0095] The first overheating protection circuit 82A is a circuit that determines whether the temperature of the first switching element 21 is within an appropriate range based on a first temperature signal from the first temperature detection circuit 83A. For example, the first overheating protection circuit 82A compares the first temperature signal from the first temperature detection circuit 83A with a preset first reference temperature. If the temperature indicated by the first temperature signal exceeds the first reference temperature, the first overheating protection circuit 82A determines that the temperature of the first switching element 21 is outside the appropriate temperature range. The first overheating protection circuit 82A then outputs, for example, a first abnormal temperature signal to the drive control circuit 81.

[0096] The second temperature detection circuit 83B is a circuit that detects the temperature of the first switching element 21 based on the output from the second temperature measurement unit TS2. The second temperature detection circuit 83B performs temperature measurement using, for example, the principle of a thermocouple by the second temperature measurement unit TS2. In this temperature measurement, the second temperature detection circuit 83B may use a thermistor 85 to correct for absolute temperature. The thermistor 85 may be mounted on a circuit board that constitutes the control module 8. The second temperature detection circuit 83B outputs a second temperature signal correlated with the temperature of the first switching element 21 to the second overheating protection circuit 82B.

[0097] The second overheating protection circuit 82B is a circuit that determines whether the temperature of the first switching element 21 is within an appropriate range based on the second temperature signal from the second temperature detection circuit 83B. For example, the second overheating protection circuit 82B compares the second temperature signal from the second temperature detection circuit 83B with a preset second reference temperature. If the temperature indicated by the second temperature signal exceeds the second reference temperature, the second overheating protection circuit 82B determines that the temperature of the first switching element 21 is outside the appropriate temperature range. The second overheating protection circuit 82B then outputs, for example, a second abnormal temperature signal to the drive control circuit 81. The second reference temperature may be the same as or different from the first reference temperature.

[0098] The drive control circuit 81 controls the first switching element 21 and the second switching element 22 according to the input state of the first abnormal temperature signal and the second abnormal temperature signal. For example, if at least one of the first abnormal temperature signal and the second abnormal temperature signal is input, the drive control circuit 81 switches the first switching element 21 and the second switching element 22 to the OFF state (non-conductive state). Alternatively, the drive control circuit 81 may be configured to switch the first switching element 21 and the second switching element 22 to the OFF state (non-conductive state) if both the first abnormal temperature signal and the second abnormal temperature signal are input.

[0099] Next, the operation of semiconductor device A100 will be explained.

[0100] In semiconductor device A100, as shown in Figure 14, the first switching element 21 is provided with a first temperature measuring unit TS1 and a second temperature measuring unit TS2. Therefore, even if a measurement malfunction occurs in one of the first temperature measuring unit TS1 or the second temperature measuring unit TS2, the temperature of the first switching element 21 can still be measured by the other unit. Furthermore, if the temperature measurement result of one unit is inaccurate, appropriate drive control can be performed based on the temperature measurement result of the other unit. Thus, the temperature of the first switching element 21 can be measured more accurately.

[0101] The first temperature measuring unit TS1 and the second temperature measuring unit TS2 operate on different temperature measuring principles. Therefore, if temperature measurement using one of these principles becomes inaccurate or the measuring structure is damaged, temperature measurement can be continued using the other. Consequently, the situation in which temperature measurement of the first switching element 21 becomes impossible can be reduced.

[0102] The first temperature measuring unit TS1 is composed of a first temperature measuring element 215. Therefore, it is possible to reduce the area on the first switching element 21 required for the first temperature measuring unit TS1. Furthermore, because the first temperature measuring element 215 is integrated into the first switching element 21, the temperature of the first switching element 21 can be measured more accurately. The fact that the first temperature measuring element 215 is a diode is preferable for accurate temperature measurement.

[0103] Because the second temperature measuring unit TS2 uses the principle of a thermocouple, it is possible to measure the temperature of the first switching element 21 using a temperature measuring principle that is significantly different from that of the first temperature measuring unit TS1. This is preferable for suppressing bias in temperature measurement results caused by the temperature measuring principle. In contrast to this embodiment, the temperature measuring principles of the first temperature measuring unit TS1 and the second temperature measuring unit TS2 may be the same. That is, the first switching element 21 may have a configuration in which a first temperature measuring element 215 as the first temperature measuring unit TS1 and another first temperature measuring element 215 as the second temperature measuring unit TS2 are incorporated.

[0104] The connection of the third connecting member 65A and the fourth connecting member 66A to the first electrode 212 improves the temperature measurement accuracy of the first switching element 21 by the second temperature measuring unit TS2.

[0105] The first connection portion 651A and the second connection portion 661A are positioned between the first temperature measuring element 215 and the connection portion 511, allowing the temperature measurement points of the first temperature measuring unit TS1 and the second temperature measuring unit TS2 to be brought closer together. This prevents the temperature measurement results of the first temperature measuring unit TS1 and the second temperature measuring unit TS2 from unintentionally differing.

[0106] As shown in Figure 18, the drive control circuit 81 can stop the operation of the first switching element 21 and the second switching element 22 based on the first abnormal temperature signal from the first overheating protection circuit 82A and the second abnormal temperature signal from the second overheating protection circuit 82B. A control method that stops the operation of the second switching element 22 when either the first or second abnormal temperature signal is abnormal will immediately stop the operation of the first switching element 21 in response to an excessive temperature rise, contributing to rapid protection. Alternatively, a control method that stops the operation of the second switching element 22 when both the first and second abnormal temperature signals are abnormal can prevent the operation control of the first switching element 21 and the second switching element 22 from being disrupted when the temperature measurement of either the first temperature measuring unit TS1 or the second temperature measuring unit TS2 is unstable.

[0107] Figures 19 to 25 show modified examples and other embodiments of the present disclosure. In these figures, elements identical or similar to those in the above embodiments are denoted by the same reference numerals. The configurations of the parts in each modified example and each embodiment can be combined with each other as appropriate, to the extent that no technical inconsistencies arise.

[0108] First Embodiment, First Modification: Figure 19 shows a first modification of semiconductor device A100. In this modification, the semiconductor device A101 is separated from each other. Both the first connection part 651A and the second connection part 661A are connected to the first electrode 212 and are adjacent to each other with a small gap between them.

[0109] The semiconductor device A101 allows for more accurate temperature measurement of the first switching element 21. As can be seen from this modified example, the first connection part 651A and the second connection part 661A constituting the second temperature measuring unit TS2 may be in contact with each other or may be separated.

[0110] Second Modification of the First Embodiment: Figure 20 shows a second modification of the semiconductor device A100. In this modification, the semiconductor device A102 has different positions for the first connection portion 651A and the second connection portion 661A compared to the example described above.

[0111] In this modified example, the first connection portion 651A and the second connection portion 661A are located on the opposite side of the connection portion 511 from the first temperature measuring element 215. The first connection portion 651A and the second connection portion 661A are located between the connection portion 511 and one corner of the first electrode 212.

[0112] The semiconductor device A102 enables more accurate temperature measurement of the first switching element 21. By positioning the first temperature measuring element 215 apart from the first connection part 651A and the second connection part 661A, the first temperature measuring unit TS1 and the second temperature measuring unit TS2 measure the temperature at more distant locations on the first switching element 21. For example, if heat generation in the first switching element 21 occurs unevenly, the temperature rise of the first switching element 21 can be detected more reliably.

[0113] Second Embodiment: Figures 21 to 23 show a semiconductor device according to the second embodiment of the present disclosure. The semiconductor device A200 of this embodiment further comprises a first temperature measuring unit TS1 and a second temperature measuring unit TS2 provided on a second switching element 22. In the illustrated example, the first temperature measuring unit TS1 and the second temperature measuring unit TS2 are provided on the second switching element 22 located furthest to the y1 side in the y direction among a plurality of second switching elements 22.

[0114] Specifically, the semiconductor device A200 further comprises a ninth auxiliary conductive member 43B, a tenth auxiliary conductive member 44B, an eleventh auxiliary conductive member 45B, and a twelfth auxiliary conductive member 46B, and a fifth connecting member 63B, a sixth connecting member 64B, a seventh connecting member 65B, and an eighth connecting member 66B.

[0115] As shown in Figures 22 and 23, the second switching element 22 located furthest to the y1 side in the y direction among the plurality of second switching elements 22 is provided with a second temperature measuring element 225 in addition to the switching function region such as the MOSFET described above. The second temperature measuring element 225 is an example of the first temperature measuring unit TS1 of this disclosure. The second temperature measuring element 225 is located on the surface side of the second switching element 22. The second temperature measuring element 225 is independent of the switching function region and does not directly contribute to the switching operation by the switching function region. The second temperature measuring element 225 includes, for example, a second temperature measuring region 2250, a second anode electrode 2251, and a second cathode electrode 2252. The specific configuration of the second temperature measurement region 2250, the second anode electrode 2251, and the second cathode electrode 2252 is not limited in any way, and may be the same as the configuration of the first temperature measurement region 2150, the first anode electrode 2151, and the first cathode electrode 2152 of the first temperature measurement element 215 in the first switching element 21.

[0116] The ninth auxiliary conductive member 43B is electrically connected to the second anode electrode 2251. The ninth auxiliary conductive member 43B is located on the x1 side in the x direction relative to the seventh auxiliary conductive member 41B. The ninth auxiliary conductive member 43B has a ninth auxiliary terminal portion 431B and a ninth auxiliary wiring portion 432B. The ninth auxiliary terminal portion 431B protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The ninth auxiliary wiring portion 432B is covered by the sealing resin 7. The shape and size of the ninth auxiliary wiring portion 432B are not limited in any way.

[0117] The tenth auxiliary conductive member 44B is electrically connected to the second cathode electrode 2252. The tenth auxiliary conductive member 44B is located on the x2 side in the x direction relative to the eighth auxiliary conductive member 42B. The tenth auxiliary conductive member 44B has a tenth auxiliary terminal portion 441B and a tenth auxiliary wiring portion 442B. The tenth auxiliary terminal portion 441B protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The tenth auxiliary wiring portion 442B is covered by the sealing resin 7. The shape and size of the tenth auxiliary wiring portion 442B are not limited in any way.

[0118] The 11th subconducting member 45B is electrically connected to the 5th electrode 222 of the 2nd switching element 22. The 11th subconducting member 45B is located x2 side of the x1 side edge of the 2nd conductive layer 1B in the x direction. The 11th subconducting member 45B is located x1 side in the x direction relative to the 9th subconducting member 43B. The 11th subconducting member 45B has an 11th subterminal portion 451B and an 11th subwiring portion 452B. The 11th subterminal portion 451B protrudes from the sealing resin 7 and, in the illustrated example, extends towards z1 in the z direction. The 11th subwiring portion 452B is covered by the sealing resin 7. The shape and size of the 11th subwiring portion 452B are not limited in any way.

[0119] The 12th subconducting member 46B is electrically connected to the 5th electrode 222 of the 2nd switching element 22. The 12th subconducting member 46B is located on the x2 side in the x direction relative to the 11th subconducting member 45B. The 12th subconducting member 46B has a 12th subterminal portion 461B and a 12th subwiring portion 462B. The 12th subterminal portion 461B protrudes from the sealing resin 7 and, in the illustrated example, extends to the z1 side in the z direction. The 12th subwiring portion 462B is covered by the sealing resin 7. The shape and size of the 12th subwiring portion 462B are not limited in any way.

[0120] The fifth connecting member 63B is connected to the second anode electrode 2251 and the ninth sub-wiring section 432B of the ninth sub-conducting member 43B. The sixth connecting member 64B is connected to the second cathode electrode 2252 and the tenth sub-wiring section 442B of the tenth sub-conducting member 44B. The material and diameter of the fifth connecting member 63B and the sixth connecting member 64B may be the same as, for example, the first connecting member 63A and the second connecting member 64A.

[0121] The seventh connecting member 65B and the eighth connecting member 66B are used to measure the temperature of the second switching element 22 by the principle of thermocouples. The seventh connecting member 65B and the eighth connecting member 66B may have the same material, connection configuration, etc., or they may be different.

[0122] As shown in Figures 22 and 23, the seventh connecting member 65B provides electrical conductivity between the second switching element 22 and the eleventh subconducting member 45B. In the illustrated example, the seventh connecting member 65B is connected to the fifth electrode 222 of the second switching element 22 located furthest to the y1 side in the y direction and to the eleventh sub-wiring section 452B of the eleventh subconducting member 45B. The specific configuration of the seventh connecting member 65B is not limited and can be a wire or ribbon mainly composed of a first metal. The first metal includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the first metal of the seventh connecting member 65B is constantan, which is an example of an alloy of Cu (copper) and Ni (nickel). The thickness of the seventh connecting member 65B is not limited and can be, for example, the same as that of the third connecting member 65A.

[0123] The seventh connecting member 65B has a seventh connecting portion 651B. The seventh connecting portion 651B is the portion connected to the fifth electrode 222 of the second switching element 22. The position on the fifth electrode 222 to which the seventh connecting portion 651B is connected is not limited in any way. In the illustrated example, the seventh connecting portion 651B is located on the fifth electrode 222 on the x2 side in the x direction and on the y1 side in the y direction with respect to the two connecting portions 521. This position is between one corner of the fifth electrode 222 and the connecting portion 521.

[0124] The eighth connecting member 66B provides electrical conductivity between the second switching element 22 and the twelfth sub-conducting member 46B. In the illustrated example, the eighth connecting member 66B provides electrical conductivity between the fifth electrode 222 of the second switching element 22 located furthest to the y1 side in the y direction and the twelfth sub-wiring portion 462B of the twelfth sub-conducting member 46B. The specific configuration of the eighth connecting member 66B is not limited in any way and can be a wire or ribbon mainly composed of a second metal. The second metal is a metal with a different thermoelectric power from the first metal and includes, for example, Cu (copper), Al (aluminum), Ni (nickel), and alloys thereof. In this example, the second metal of the eighth connecting member 66B is Cu (copper). The thickness of the eighth connecting member 66B is not limited in any way and can be, for example, the same as the diameter of the fourth connecting member 66A.

[0125] The eighth connecting member 66B has an eighth connecting portion 661B. The eighth connecting portion 661B is the portion connected to the seventh connecting portion 651B. The eighth connecting portion 661B is in contact with the seventh connecting portion 651B. The eighth connecting portion 661B may or may not be in contact with the fifth electrode 222. The eighth connecting portion 661B is electrically connected to the fifth electrode 222 via the seventh connecting portion 651B. The specific configuration of the eighth connecting portion 661B may be the same as the specific configuration of the second connecting portion 661A described above. The specific relationship between the seventh connecting portion 651B and the eighth connecting portion 661B may be the same as the specific relationship between the first connecting portion 651A and the second connecting portion 661A described above. The seventh connecting portion 651B and the eighth connecting portion 661B may be separated from each other.

[0126] In the illustrated example, the seventh connection portion 651B and the eighth connection portion 661B are located between the connection portion 521 and the second temperature measuring element 225 when viewed in the z direction.

[0127] For example, in a power conversion system B100 in which semiconductor device A200 is provided instead of semiconductor device A100, the control module 8 may include a first overheating protection circuit 82A, a first temperature detection circuit 83A, a second overheating protection circuit 82B, a second temperature detection circuit 83B and a thermistor 85 for the first switching element 21, and a first overheating protection circuit 82A, a first temperature detection circuit 83A, a second overheating protection circuit 82B, a second temperature detection circuit 83B and a thermistor 85 for the second switching element 22.

[0128] The semiconductor device A200 allows for more accurate temperature measurement of the first switching element 21 and the second switching element 22. This enables more appropriate control of the operation of the semiconductor device A200.

[0129] Third Embodiment: Figures 24 and 25 show a semiconductor device according to a third embodiment of the present disclosure. The semiconductor device A300 of this embodiment further comprises transistor elements 23 and 24. Transistor element 23 is provided to protect the first switching element 21. Transistor element 24 is provided to protect the second switching element 22. As shown in Figure 24, transistor element 23 is connected to the first switching element 21 by a main connecting member 51. The main connecting member 51 has a connecting portion 513. The connecting portion 513 is the portion connected to the transistor element 23.

[0130] In this embodiment, the first temperature measuring unit TS1 is provided on the first switching element 21. The first temperature measuring unit TS1 is composed of, for example, the first temperature measuring element 215 described above. The second temperature measuring unit TS2 is provided on the second switching element 22. The second temperature measuring unit TS2 is composed of, for example, a third connecting member 65A and a seventh connecting member 65B connected to the transistor element 23.

[0131] In semiconductor device A300, the transistor element 23 is connected to the first switching element 21 by a connection part 511. When the first switching element 21 generates heat, heat is transferred from the first switching element 21 to the transistor element 23 via the main connection member 51. As a result, the temperature of the transistor element 23 rises in response to the heat generated by the first switching element 21. Therefore, the temperatures of the first switching element 21 and the transistor element 23 can be measured more accurately.

[0132] By providing the second temperature measuring unit TS2 on the transistor element 23, it is not necessary to set up an area on the first switching element 21 for providing the second temperature measuring unit TS2. This is preferable for miniaturizing the first switching element 21. Alternatively, the size of the connection portion 511 can be made larger, which can reduce electrical resistance.

[0133] The semiconductor device and power conversion system relating to this disclosure are not limited to the embodiments described above. The specific configuration of the semiconductor device and power conversion system relating to this disclosure can be modified in various ways. This disclosure includes the embodiments described in the following appendix.

[0134] Note 1. A semiconductor device (A100) comprising a first switching element (21), a first temperature measuring unit (TS1) provided on the first switching element (21), and a second temperature measuring unit (TS2) provided on the first switching element (21). Note 2. The semiconductor device (A100) according to Note 1, wherein the first temperature measuring unit (TS1) and the second temperature measuring unit (TS2) have different temperature measurement principles. Note 3. The semiconductor device (A100) according to Note 2, wherein the first temperature measuring unit (TS1) is a first temperature measuring element (215) fabricated in the first switching element (21). Note 4. The semiconductor device (A100) according to Note 3, wherein the first temperature measuring element (215) includes a diode. Note 5. The semiconductor device (A100) according to Note 3, wherein the second temperature measuring unit (TS2) utilizes the principle of a thermocouple. Note 6. The semiconductor device (A100) described in Appendix 5, wherein the second temperature measuring unit (TS2) includes a third connecting member (65A) and a fourth connecting member (66A) connected to the first switching element (21), and the metal constituting the third connecting member (65A) and the metal constituting the fourth connecting member (66A) have different thermoelectric voltages. Appendix 7. The semiconductor device (A100) described in Appendix 6, wherein the first switching element (21) has a second electrode (211) and a first electrode (212) through which a current that is to be switched flows, and a third electrode (213) to which a signal for switching the conductivity between the second electrode (211) and the first electrode (212) is input. Appendix 8. The semiconductor device (A100) described in Appendix 7, wherein in the thickness direction (z) of the first switching element (21), the first electrode (212) and the third electrode (213) are located on the same side. Appendix 9. The semiconductor device (A100) according to Appendix 8, wherein the first temperature measuring element (215) is located on the same side as the first electrode (212) and the third electrode (213) in the thickness direction (z), and is separated from the first electrode (212) and the third electrode (213) when viewed in the thickness direction (z). Appendix 10. The semiconductor device (A100) according to Appendix 9, wherein the third connecting member (65A) and the fourth connecting member (66A) are connected to the first electrode (212).Note 11. The semiconductor device (A100) according to Note 10, comprising a main connecting member (51) having a connecting portion (511) connected to the first electrode (212). Note 12. The semiconductor device (A100) according to Note 11, wherein the third connecting member (65A) and the fourth connecting member (66A) are located between the first temperature measuring element (215) and the connecting portion (511) when viewed in the thickness direction. Note 13. The semiconductor device (A102) according to Note 11, wherein the third connecting member (65A) and the fourth connecting member (66A) are located on the opposite side of the first temperature measuring element (215) from the connecting portion (511) when viewed in the thickness direction. Note 14. A semiconductor device (A200) comprising: a first switching element (21); a transistor element (23); a main connecting member (51) connecting the first switching element (21) and the transistor element (23); a first temperature measuring unit (TS1) provided on the first switching element (21); and a second temperature measuring unit (TS2) provided on the transistor element (23). Note 15. A power conversion system (B100) comprising: a semiconductor device (A100, A200) as described in any of Notes 1 to 14; and a control module (8) for controlling the switching operation of the first switching element (21), wherein the control module (8) switches the first switching element (21) to the OFF state based on a first temperature signal from the first temperature measuring unit (TS1) and a second temperature signal from the second temperature measuring unit (TS2). Note 16. The semiconductor device (A200) according to Appendix 1, further comprising a second switching element (22), and a first temperature measuring unit (TS1) and a second temperature measuring unit (TS2) provided on the second switching element (22). Appendix 17. The semiconductor device (A200) according to Appendix 16, wherein the second temperature measuring unit (TS2) provided on the second switching element (22) is a first temperature measuring unit (225) fabricated in the second switching element (22).Note 18. The semiconductor device (A200) according to Note 17, wherein the second temperature measuring unit (TS2) provided on the second switching element (22) includes a seventh connecting member (65B) and an eighth connecting member (66B) connected to the second switching element (22), and the metal constituting the seventh connecting member (65B) and the metal constituting the eighth connecting member (66B) have different thermoelectric voltages. Note 19. The semiconductor device (A200) according to any one of Notes 16 to 18, wherein the first switching element (21) and the second switching element (22) constitute a half-bridge circuit. Note 20. The semiconductor device (A200) according to any one of Notes 16 to 19, wherein the first switching element (21) and the second switching element (22) include SiC.

[0135] A100, A101, A102, A200, A300: Semiconductor device, B100: Power conversion system, 1A: First conductive layer, 1B: Second conductive layer, 7: Sealing resin, 8: Control module, 10A: Support member, 10B: Support member, 10Bb: Support member, 11: Second electrode, 11A: First main surface, 11B: Second main surface, 21: First switching element, 22: Second switching element, 23, 24: Transistor elements, 29: Conductive junction layer, 31: First main conductive member, 32: Second main conductive member, 33: Third main conductive member, 41: Subconductive member, 41A: First Subconducting member, 41B: 7th subconducting member, 42: Subconducting member, 42A: 2nd subconducting member, 42B: 8th subconducting member, 43: Subconducting member, 43A: 3rd subconducting member, 43B: 9th subconducting member, 44: Subconducting member, 44A: 4th subconducting member, 44B: 10th subconducting member, 45A: 5th subconducting member, 45B: 11th subconducting member, 46: Subconducting member, 46A: 6th subconducting member, 46B: 12th subconducting member, 47: Subconducting member, 48: Subconducting member, 51: Main connecting member, 52: Main connecting member, 61A, 61B, 62A,62B: Connecting member, 63A: First connecting member, 63B: Fifth connecting member, 64: Connecting member, 64A: Second connecting member, 64B: Sixth connecting member, 65A: Third connecting member, 65B: Seventh connecting member, 66A: Fourth connecting member, 66B: Eighth connecting member, 67: Connecting member, 68: Connecting member, 71: Top surface, 72: Bottom surface, 73: First side surface, 74: Second side surface, 75: Third side surface, 76: Fourth side surface, 81: Drive control circuit, 82A: First overheating protection circuit, 82B: Second overheating protection circuit, 83A: First temperature detection circuit, 83B: Second temperature detection circuit, 85: Thermistor, 101: Insulating layer, 102: support layer, 103: heat dissipation layer, 211: second electrode, 212: first electrode, 213: third electrode, 214: fourth electrode, 215: first temperature measuring element, 217: interlayer insulating film, 221: sixth electrode, 222: fifth electrode, 223: seventh electrode, 224: eighth electrode, 225: second temperature measuring element child, 311: first main terminal, 319: first pillow material, 321: second main terminal, 329: second pillow material, 331: third main terminal, 332: extension part, 411A: first sub-terminal part, 411B: seventh sub-terminal part, 412A: first sub-wiring part, 412B: seventh sub-wiring part, 421A: second sub-terminal part, 421B : 8th sub-terminal section, 422A: 2nd sub-wiring section, 422B: 8th sub-wiring section, 431A: 3rd sub-terminal section, 431B: 9th sub-terminal section, 432A: 3rd sub-wiring section, 432B: 9th sub-wiring section, 441A: 4th sub-terminal section, 441B: 10th sub-terminal section, 442A: 4th sub-wiring section, 442B: 10th sub-wiring section, 451A: 5th sub-terminal section, 451B: 11th sub-terminal section, 452A: 5th sub-wiring section, 452B: 11th sub-wiring section, 461A: 6th sub-terminal section, 461B: 12th sub-terminal section, 462A: 6th sub-wiring section, 462B: 12th sub-wiring section, 510: Loop section, 511, 5 12, 513, 521, 522: connection part, 520: loop part, 651A: first connection part, 651B: seventh connection part, 661A: second connection part, 661B: eighth connection part, 2150: first temperature measurement area, 2151: first anode electrode, 2152: first cathode electrode, 2160: substrate body, 2161: p-type area, 2162: gate insulating film, 2163: diode part, 2164: p-type area, 2165: type area, 2166: type contact area, 2167: p-type outer peripheral area, 2168, 2169: contact part, 2171, 2172: contact hole, 2181,2182: Outlet section, 2250: Second temperature measurement area, 2251: Second anode electrode, 2252: Second cathode electrode, 3111: First mounting hole, 3211: Second mounting hole, 3311: Third mounting hole, 3321: First section, 3322: Second section, 3323: Third section, TS1: First temperature measurement section, TS2: Second temperature measurement section, VF: Forward voltage.

Claims

1. A semiconductor device comprising a switching element, a first temperature measuring unit provided on the switching element, and a second temperature measuring unit provided on the switching element.

2. The semiconductor device according to claim 1, wherein the first temperature measuring unit and the second temperature measuring unit have different temperature measuring principles.

3. The semiconductor device according to claim 2, wherein the first temperature measuring unit is a first temperature measuring element incorporated into the switching element.

4. The semiconductor device according to claim 3, wherein the first temperature measuring element includes a diode.

5. The semiconductor device according to claim 3, wherein the second temperature measuring unit utilizes the principle of a thermocouple.

6. The semiconductor device according to claim 5, wherein the second temperature measuring unit includes a third connecting member and a fourth connecting member connected to the switching element, and the metal constituting the third connecting member and the metal constituting the fourth connecting member have different thermoelectric voltages.

7. The semiconductor device according to claim 6, wherein the switching element comprises a second electrode and a first electrode through which a current to be switched flows, and a third electrode to which a signal for switching the conductivity between the second electrode and the first electrode is input.

8. The semiconductor device according to claim 7, wherein the first electrode and the third electrode are located on the same side in the thickness direction of the switching element.

9. The semiconductor device according to claim 8, wherein the first temperature measuring element is located on the same side as the first electrode and the third electrode in the thickness direction, and is separated from the first electrode and the third electrode when viewed in the thickness direction.

10. The semiconductor device according to claim 9, wherein the third connecting member and the fourth connecting member are connected to the first electrode.

11. The semiconductor device according to claim 10, comprising a main connecting member having a connecting portion connected to the first electrode.

12. The semiconductor device according to claim 11, wherein the third connecting member and the fourth connecting member are located between the first temperature measuring element and the connecting portion when viewed in the thickness direction.

13. The semiconductor device according to claim 11, wherein the third connecting member and the fourth connecting member are located on the opposite side of the connection portion from the first temperature measuring element when viewed in the thickness direction.

14. A semiconductor device comprising: a switching element; a transistor element; a main connecting member connecting the switching element and the transistor element; a first temperature measuring unit provided on the switching element; and a second temperature measuring unit provided on the transistor element.

15. A power conversion system comprising a semiconductor device according to any one of claims 1 to 14, and a control module for controlling the switching operation of the switching element, wherein the control module switches the switching element to the OFF state based on a first temperature signal from the first temperature measuring unit and a second temperature signal from the second temperature measuring unit.

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