Polishing method, slurry, and abrasive grain

Abstract

Provided is a polishing method comprising a polishing step of using a slurry to polish a resin portion of a member to be polished, the resin portion containing a resin material, wherein the slurry includes abrasive grains that have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles. Provided is a slurry for polishing a resin portion of a member to be polished, the resin portion containing a resin material, wherein the slurry includes abrasive grains that have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles. Provided are abrasive grains for polishing a resin portion of a member to be polished, the resin portion containing a resin material, wherein the abrasive grains have silicon oxide particles and an aluminum component present on each surface of the silicon oxide particles.

Description

Polishing method, slurry, and abrasive grains

[0001] The present disclosure relates to a polishing method, slurry, abrasive grains, etc.

[0002] In the semiconductor field, with the improvement of the performance of ultra-LSI devices, it has become difficult to achieve both high integration and high speed by miniaturization technology that is an extension of the prior art. Therefore, while advancing the miniaturization of semiconductor elements, a technology for high integration in the vertical direction (that is, a technology for multilayer wiring) has been developed.

[0003] As such a technology, hybrid bonding using a resin material may be used. In hybrid bonding, after removing the resin portion (the portion containing the resin material) on the metal portion (the portion containing the metal material: a metal pattern (copper pattern, tin-silver alloy pattern, etc.) formed by photolithography) by polishing (for example, CMP (chemical mechanical polishing)), an exposed surface where the metal portion and the resin portion are exposed is obtained, and then this exposed surface can be bonded to the bonding object. The resin portion can be obtained, for example, by supplying a curable resin material onto the metal portion and then curing the resin material.

[0004] CMP is usually performed using a device capable of supplying a polishing liquid onto a polishing pad. Then, the surface of the polished member is polished by pressing the polished member against the polishing pad while supplying the polishing liquid between the surface of the polished member and the polishing pad. Thus, in CMP technology, the polishing liquid is one of the key technologies, and various polishing liquids have been developed so far in order to obtain a high-performance polishing liquid (for example, see Patent Document 1 below).

[0005] Japanese Patent Application Laid-Open No. 2008-288537

[0006] For a slurry that can be used as a polishing liquid for polishing the resin portion of the polished member, and for the abrasive grains used in such a slurry, it may be required to obtain a high polishing rate of the resin material. For example, in the above-described hybrid bonding using a resin material, it is required to obtain a high polishing rate of the resin material in order to expose the metal portion.

[0007] One aspect of this disclosure aims to provide a polishing method capable of achieving a high polishing speed for resin materials. Another aspect of this disclosure aims to provide a slurry capable of achieving a high polishing speed for resin materials. Another aspect of this disclosure aims to provide abrasive grains capable of achieving a high polishing speed for resin materials.

[0008] This disclosure relates to the following [1] to

[34] , etc. [1] A polishing method comprising a polishing step of polishing a resin portion of a member to be polished having a resin portion containing a resin material using a slurry, wherein the slurry contains abrasive grains having silicon oxide particles and aluminum components present on the surface of the silicon oxide particles. [2] The polishing method according to [1], wherein the resin material contains polyimide. [3] The polishing method according to [1] or [2], wherein the resin material contains a phenolic resin. [4] The polishing method according to any one of [1] to [3], wherein the member to be polished further has a metal portion containing a metal material. [5] The polishing method according to [4], wherein the metal material contains copper. [6] The polishing method according to [4] or [5], wherein the metal material contains a tin-silver alloy. [7] The polishing method according to any one of [4] to [6], wherein in the polishing step, the resin portion and the metal portion are polished. [8] The polishing method according to any one of [4] to [7], wherein the metal part is covered by the resin part, and in the polishing step, the resin part is polished until the metal part is exposed. [9] The polishing method according to [8], wherein in the polishing step, the resin part is polished until the metal part protrudes from the resin part in a direction perpendicular to the surface to be polished.

[10] The polishing method according to any one of [1] to [9], wherein the silicon oxide particles contain colloidal silica.

[11] The polishing method according to any one of [1] to

[10] , wherein the zeta potential of the abrasive grains is positive.

[12] The polishing method according to any one of [1] to

[11] , wherein the average particle size of the abrasive grains is 20 to 200 nm.

[13] The polishing method according to any one of [1] to

[12] , wherein the atomic ratio of aluminum to silicon Al / Si obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.010 to 1.000.

[14] The polishing method according to any one of [1] to

[12] , wherein the atomic ratio Al / Si of aluminum and silicon obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.100 to 0.200.

[15] The polishing method according to any one of [1] to

[14] , wherein the slurry further contains alcohol, and the alcohol content is 1.0 to 50.0% by mass based on the total mass of the slurry.

[16] The polishing method according to

[15] , wherein the alcohol contains an alkoxy alcohol.

[17] A slurry for polishing a resin portion of a member to be polished, the resin portion of which contains a resin material, the slurry comprising abrasive grains having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles.

[18] The slurry according to

[17] , wherein the resin material comprises polyimide.

[19] The slurry according to

[17] or

[18] , wherein the resin material comprises a phenolic resin.

[20] The slurry according to any one of

[17] to

[19] , wherein the silicon oxide particles comprise colloidal silica.

[21] The slurry according to any one of

[17] to

[20] , wherein the zeta potential of the abrasive grains is positive.

[22] The slurry according to any one of

[17] to

[21] , wherein the average particle size of the abrasive grains is 20 to 200 nm.

[23] The slurry according to any one of

[17] to

[22] , wherein the atomic ratio of aluminum to silicon, Al / Si, obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.010 to 1.000.

[24] The slurry according to any one of

[17] to

[22] , wherein the atomic ratio Al / Si of aluminum and silicon obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.100 to 0.200.

[25] The slurry according to any one of

[17] to

[24] , further containing alcohol, wherein the alcohol content is 1.0 to 50.0% by mass based on the total mass of the slurry.

[26] The slurry according to

[25] , wherein the alcohol contains an alkoxy alcohol.

[27] Abrasive grains for polishing the resin portion of a member to be polished having a resin portion containing a resin material, comprising silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles.

[28] The abrasive grain according to

[27] , wherein the resin material contains polyimide.

[29] The abrasive grain according to

[27] or

[28] , wherein the resin material contains a phenolic resin.

[30] The abrasive grain according to any one of

[27] to

[29] , wherein the silicon oxide particles contain colloidal silica.

[31] Abrasive grain according to any one of

[27] to

[30] , wherein the zeta potential is positive.

[32] Abrasive grain according to any one of

[27] to

[31] , wherein the average particle size is 20 to 200 nm.

[33] The abrasive grain according to any one of

[27] to

[32] , wherein the atomic ratio of aluminum to silicon Al / Si obtained by X-ray photoelectron spectroscopy measurement on the surface of the abrasive grain is 0.010 to 1.000.

[34] The abrasive grain according to any one of

[27] to

[32] , wherein the atomic ratio of aluminum to silicon Al / Si obtained by X-ray photoelectron spectroscopy measurement on the surface of the abrasive grain is 0.100 to 0.200.

[0009] According to one aspect of this disclosure, a polishing method capable of achieving a high polishing speed for resin materials can be provided. According to another aspect of this disclosure, a slurry capable of achieving a high polishing speed for resin materials can be provided. According to yet another aspect of this disclosure, abrasive grains capable of achieving a high polishing speed for resin materials can be provided.

[0010] The embodiments of this disclosure will be described in detail below.

[0011] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range exceeding A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. "A or B" means that either A or B is included, or both are included. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component, unless otherwise specified. The term "film" includes not only structures formed on the entire surface when observed as a plan view, but also structures formed on only a part of it. The term "process" includes not only independent processes, but also any process that cannot be clearly distinguished from other processes, as long as its intended function is achieved.

[0012] The polishing method according to this embodiment comprises a polishing step of polishing the resin portion of a workpiece having a resin portion containing a resin material using a slurry (the slurry according to this embodiment). In the polishing method according to this embodiment, the slurry contains abrasive grains (abrasive grains according to this embodiment) having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles. The slurry according to this embodiment is a slurry for polishing the resin portion of a workpiece having a resin portion containing a resin material. The slurry according to this embodiment contains abrasive grains (abrasive grains according to this embodiment) having silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles. The slurry according to this embodiment can be used as a polishing slurry and can be used as a CMP polishing liquid. The abrasive grains according to this embodiment are abrasive grains for polishing the resin portion of a workpiece having a resin portion containing a resin material. The abrasive grains according to this embodiment have silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles. Hereinafter, abrasive grains having silicon oxide particles and aluminum components present on the surface of the silicon oxide particles will be referred to as "abrasive grain a," and the entirety of abrasive grains contained in the slurry according to this embodiment will be referred to as "abrasive grain A," with abrasive grain a constituting at least a portion of abrasive grain A.

[0013] According to the polishing method, slurry, and abrasive grains of this embodiment, it is possible to obtain a high polishing speed for resin materials, and when polishing the resin portion of a workpiece having a resin portion containing polyimide, a high polishing speed for polyimide can be obtained. According to the polishing method, slurry, and abrasive grains of this embodiment, in the evaluation method described in the [Examples] below, a polishing speed of 160 nm / min or more (preferably 170 nm / min or more, 180 nm / min or more, 200 nm / min or more, 250 nm / min or more, etc.) can be obtained for polyimide. It is presumed that a high polishing speed for resin materials can be obtained by increasing the frequency of contact between the abrasive grains and the resin portion due to the interaction between the aluminum component present on the surface of silicon oxide particles and the resin material (for example, the electrostatic attraction between the positively charged aluminum component and the negatively charged resin material). However, the factors are not limited to the above.

[0014] The polishing method, slurry, and abrasive grains according to this embodiment only need to have the characteristic of being able to obtain a high polishing speed of polyimide when polishing the resin portion of a workpiece having a resin portion containing polyimide, and may be used to polish the resin portion of a workpiece having a resin portion containing a resin material other than polyimide. In this case, the polishing method, slurry, and abrasive grains according to this embodiment may polish polyimide and the resin material other than polyimide simultaneously, or polish the resin material other than polyimide without polishing the polyimide. That is, the polishing method, slurry, and abrasive grains according to this embodiment are not limited to a polishing method, slurry, and abrasive grains for polishing the resin portion of a workpiece having a resin portion containing polyimide, but may also be a polishing method, slurry, and abrasive grains for polishing the resin portion of a workpiece having a resin portion containing a resin material other than polyimide, and in this case the resin portion may or may not contain polyimide.

[0015] According to one embodiment of the polishing method, slurry, and abrasive grains of this embodiment, a high polishing speed of the phenolic resin can be obtained when polishing the resin portion of a workpiece having a resin portion containing a phenolic resin. According to the polishing method, slurry, and abrasive grains of this embodiment, in the evaluation method described in the [Examples] below, a polishing speed of 90 nm / min or more (preferably 100 nm / min or more, 120 nm / min or more, 200 nm / min or more, 300 nm / min or more, etc.) can be obtained for the phenolic resin.

[0016] The polishing method, slurry, and abrasive grains according to this embodiment may be used to polish a surface where only resin parts are present, or to polish a surface where resin parts and metal parts coexist. The polishing method, slurry, and abrasive grains according to this embodiment may be used to remove resin parts from metal parts by polishing, or to polish exposed surfaces where metal parts and resin parts are exposed.

[0017] According to one embodiment of the polishing method, slurry, and abrasive grains of this embodiment, the surface roughness (Ra) of the polished surface after polishing can be reduced. According to one embodiment of the polishing method, slurry, and abrasive grains of this embodiment, in the evaluation method described in the [Examples] below, a surface roughness (Ra) of, for example, 2.0 nm or less (preferably 1.5 nm or less, 1.0 nm or less, etc.) can be obtained.

[0018] The abrasive grains according to this embodiment are abrasive grains a, which have silicon oxide particles (particles containing silicon oxide) and an aluminum component present on the surface of the silicon oxide particles. The slurry according to this embodiment contains abrasive grains a, which have silicon oxide particles (particles containing silicon oxide) and an aluminum component present on the surface of the silicon oxide particles. Silica particles (particles containing silica) can be used as the silicon oxide particles. Colloidal silica may be used as the silica particles, or particles different from colloidal silica may be used. From the viewpoint of easily reducing the surface roughness of the polished surface after polishing, the silicon oxide particles may contain colloidal silica.

[0019] The silicon dioxide content in silicon dioxide particles (based on the total mass of silicon dioxide particles), or the silica content in silica particles (based on the total mass of silica particles), may be 50.0% by mass or more, greater than 50.0% by mass, 60.0% by mass or more, 70.0% by mass or more, 80.0% by mass or more, 90.0% by mass or more, 93.0% by mass or more, 95.0% by mass or more, 98.0% by mass or more, 99.0% by mass or more, 99.5% by mass or more, or 99.9% by mass or more, from the viewpoint of easily obtaining a high polishing speed for the resin material or easily reducing the surface roughness of the polished surface after polishing. The silicon dioxide particles may be substantially composed of silicon dioxide (a form in which substantially 100% by mass of silicon dioxide particles is silicon dioxide). The silica particles may be substantially composed of silica (a form in which substantially 100% by mass of silica particles is silica).

[0020] Aluminum components can be present on at least a portion of the surface of silicon dioxide particles. Examples of aluminum components include aluminum compounds and aluminum ions (Al ３＋Examples of aluminum compounds include aluminum acetate, aluminum acetate derivatives (aluminum monohydrate diacetate, aluminum monohydrate dihydrate, etc.), aluminum lactate, aluminum laurate, aluminum stearate, aluminum oxalate, aluminum oxide, aluminum hydroxide, aluminum sulfide, aluminum nitride, aluminum fluoride, aluminum chloride, aluminum bromide, aluminum iodide, aluminum sulfate, sodium aluminum sulfate, potassium aluminum sulfate, aluminum ammonium sulfate, aluminum nitrate, aluminum perchlorate, aluminum aluminate, aluminum silicate, aluminum phosphate, alkoxyaluminum, aluminosilicate, aluminum compounds containing one or more of these conjugate acids, and hydrates thereof. Aluminum compounds can be used individually or in combination of two or more. From the viewpoint of easily obtaining a high polishing rate for resin materials, aluminum compounds may contain compounds other than aluminum oxide.

[0021] The atomic ratio Al / Si of aluminum and silicon obtained by X-ray photoelectron spectroscopy (XPS) measurement on the surface of abrasive grain a may be within the following range, from the viewpoint of easily obtaining a high polishing speed for the resin material or from the viewpoint of adjusting the polishing speed of the resin material. The atomic ratio Al / Si may be 0.010 or more, 0.030 or more, 0.050 or more, 0.080 or more, 0.100 or more, 0.101 or more, 0.105 or more, 0.106 or more, 0.108 or more, 0.110 or more, 0.120 or more, 0.130 or more, 0.140 or more, 0.150 or more, 0.160 or more, 0.170 or more, or 0.180 or more. The atomic ratio Al / Si may be 1.000 or less, less than 1.000, 0.900 or less, 0.800 or less, 0.700 or less, 0.600 or less, 0.500 or less, 0.400 or less, 0.300 or less, 0.200 or less, 0.180 or less, 0.170 or less, 0.160 or less, 0.150 or less, 0.140 or less, 0.130 or less, 0.120 or less, 0.110 or less, 0.108 or less, 0.106 or less, 0.105 or less, or 0.101 or less. From these perspectives, the atomic ratio Al / Si may be 0.010 to 1.000, 0.010 to 0.500, 0.010 to 0.200, 0.010 to 0.150, 0.010 to 0.108, 0.100 to 1.000, 0.100 to 0.500, 0.100 to 0.200, 0.100 to 0.150, 0.100 to 0.108, 0.108 to 1.000, 0.108 to 0.500, 0.108 to 0.200, 0.108 to 0.150, 0.150 to 1.000, 0.150 to 0.500, or 0.150 to 0.200. The atomic ratio Al / Si can be measured by the method described in the [Examples] below, and may be the average value of three measurement points. In this embodiment, the atomic ratio Al / Si of abrasive particles a in a slurry, aqueous dispersion of abrasive particles a, etc., can be measured by recovering the abrasive particles a from the liquid. In the surface treatment of silicon oxide particles using an aluminum component, the atomic ratio Al / Si can be adjusted by adjusting the amount of aluminum component attached to the surface of the silicon oxide particles. The atomic ratio Al / Si tends to be the same before and after mixing abrasive particles a with other components to prepare the slurry.

[0022] The average particle size of abrasive grain A, or the average particle size of abrasive grain a, may be within the following ranges, from the viewpoint of easily obtaining a high polishing speed for the resin material, or from the viewpoint of easily reducing the surface roughness of the polished surface after polishing. The average particle size may be 10 nm or more, 20 nm or more, 25 nm or more, greater than 25 nm, 30 nm or more, 40 nm or more, 50 nm or more, greater than 50 nm, 55 nm or more, 60 nm or more, greater than 60 nm, 65 nm or more, 70 nm or more, greater than 70 nm, 75 nm or more, 80 nm or more, greater than 80 nm, 85 nm or more, 90 nm or more, greater than 90 nm, 95 nm or more, 100 nm or more, greater than 100 nm, 105 nm or more, or 110 nm or more. The average particle size may be 1000 nm or less, 900 nm or less, 800 nm or less, 700 nm or less, 600 nm or less, 500 nm or less, 400 nm or less, 300 nm or less, 200 nm or less, 150 nm or less, 120 nm or less, or 110 nm or less. From these viewpoints, the average particle size may be 10 to 1000 nm, 10 to 500 nm, 10 to 200 nm, 20 to 1000 nm, 20 to 500 nm, 20 to 200 nm, 30 to 1000 nm, 30 to 500 nm, 30 to 200 nm, 50 to 1000 nm, 50 to 500 nm, 50 to 200 nm, 80 to 1000 nm, 80 to 500 nm, or 80 to 200 nm. The average particle size is the average particle size in the slurry and may be the 50% cumulative diameter (D50) in the mass-based cumulative particle size distribution curve. The average particle size can be measured by the method described in [Examples] below.

[0023] The zeta potential of abrasive grain A, or the zeta potential of abrasive grain a, may be positive in the slurry (the zeta potential may exceed 0 mV) from the viewpoint of easily obtaining a high polishing speed for resin materials. It is presumed that a positive zeta potential allows for suitable polishing of resin materials that tend to carry a negative charge (polyimide, phenolic resins, etc.). The zeta potential can be measured by the method described in [Examples] below.

[0024] The slurry according to this embodiment may contain abrasive grains other than abrasive grain a. Examples of abrasive grains other than abrasive grain a include silicon oxide particles without aluminum components on their surface; cerium oxide particles; aluminum oxide particles; silicon nitride particles; zirconium oxide particles; titanium oxide particles; yttrium oxide particles, etc.

[0025] The content of abrasive grains a in abrasive grain A may be 50.0% by mass or more, greater than 50.0% by mass, 60.0% by mass or more, 70.0% by mass or more, 80.0% by mass or more, 90.0% by mass or more, 93.0% by mass or more, 95.0% by mass or more, 98.0% by mass or more, 99.0% by mass or more, 99.5% by mass or more, or 99.9% by mass or more, based on the total mass of abrasive grain A, from the viewpoint of easily obtaining a high polishing speed of the resin material. Abrasive grain A may be substantially composed of abrasive grains a (a mode in which substantially 100% by mass of abrasive grain A is abrasive grains a).

[0026] The content of abrasive grain A, or abrasive grain a, may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining a high polishing speed for the resin material. The content of A may be 0.10% by mass or more, 0.30% by mass or more, 0.50% by mass or more, 0.80% by mass or more, 1.0% by mass or more, 1.5% by mass or more, 2.0% by mass or more, 2.5% by mass or more, 3.0% by mass or more, 3.5% by mass or more, or 4.0% by mass or more. The content of A may be 50.0% by mass or less, 30.0% by mass or less, 20.0% by mass or less, 10.0% by mass or less, 8.0% by mass or less, 6.0% by mass or less, 5.5% by mass or less, 5.0% by mass or less, 4.5% by mass or less, or 4.0% by mass or less. From these perspectives, content A may be 0.10 to 50.0 mass%, 0.10 to 10.0 mass%, 0.10 to 5.0 mass%, 1.0 to 50.0 mass%, 1.0 to 10.0 mass%, 1.0 to 5.0 mass%, 3.0 to 50.0 mass%, 3.0 to 10.0 mass%, or 3.0 to 5.0 mass%.

[0027] The slurry according to this embodiment may contain water. The water is not particularly limited, but examples include deionized water, ion-exchanged water, and ultrapure water.

[0028] The slurry according to this embodiment may contain additives (components other than abrasive grains and water). Examples of such additives include acidic components, basic components, organic solvents, polymer compounds, metal corrosion inhibitors, and oxidizing agents.

[0029] The slurry according to this embodiment may contain an acid component. The acid component may include an organic acid component or an inorganic acid component.

[0030] Organic acid components include organic acids, organic acid esters, and organic acid salts. Examples of organic acids include glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2 Examples of organic acid esters include ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3-methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid, malic acid, fumaric acid, tartaric acid, citric acid, p-toluenesulfonic acid, p-phenolsulfonic acid, methylsulfonic acid, lactic acid, itaconic acid, quinaldic acid, etc. Examples of organic acid esters include esters of the above-mentioned organic acids. Examples of organic acid salts include ammonium salts, alkali metal salts, alkaline earth metal salts, halides, etc. of the above-mentioned organic acids. As organic acid components, amino acid components such as amino acids, amino acid esters, and amino acid salts may be used.

[0031] Inorganic acid components include inorganic acids, ammonium salts of inorganic acids, and metal salts of inorganic acids (alkali metal salts, alkaline earth metal salts, etc.). Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, chromic acid, and phosphoric acid. Examples of ammonium salts of inorganic acids include monovalent ammonium salts of inorganic acids such as ammonium nitrate, ammonium chloride, and ammonium bromide; divalent ammonium salts of inorganic acids such as ammonium carbonate, ammonium bicarbonate, ammonium sulfate, and ammonium persulfate; and trivalent ammonium salts of inorganic acids such as ammonium phosphate, ammonium hydrogen phosphate, ammonium dihydrogen phosphate, and ammonium borate.

[0032] The acid component may contain an organic acid component, a plurality of organic acids, an amino acid component, at least one selected from the group consisting of amino acids, amino acid esters, and amino acid salts, and may contain at least one selected from the group consisting of glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, esters of these amino acids, and salts of these amino acids, and may contain at least one selected from the group consisting of amino acid components and carboxylic acid components, may contain a carboxylic acid component, at least one selected from the group consisting of carboxylic acids and carboxylic acid salts, and may contain at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, benzoic acid, oxalic acid, phthalic acid, malic acid, fumaric acid, and salts thereof.

[0033] The content B1 of the acid component, organic acid component, or amino acid component may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining a high polishing speed for resin materials and metal materials. The content B1 may be 0.10% by mass or more, 0.30% by mass or more, 0.50% by mass or more, 0.80% by mass or more, 1.0% by mass or more, 1.5% by mass or more, 2.0% by mass or more, 2.5% by mass or more, or 3.0% by mass or more. The content B1 may be 50.0% by mass or less, 30.0% by mass or less, 20.0% by mass or less, 10.0% by mass or less, 8.0% by mass or less, 6.0% by mass or less, 5.5% by mass or less, 5.0% by mass or less, 4.5% by mass or less, 4.0% by mass or less, 3.5% by mass or less, or 3.0% by mass or less. From these perspectives, the content B1 may be 0.10 to 50.0% by mass, 0.10 to 10.0% by mass, 0.10 to 5.0% by mass, 1.0 to 50.0% by mass, 1.0 to 10.0% by mass, 1.0 to 5.0% by mass, 2.0 to 50.0% by mass, 2.0 to 10.0% by mass, or 2.0 to 5.0% by mass.

[0034] The content B2 of the acid component, organic acid component, or amino acid component may be within the following ranges relative to 100 parts by mass of abrasive grain A or abrasive grain a, from the viewpoint of easily obtaining a high polishing speed for the resin material. The content B2 may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, or 75 parts by mass or more. The content B2 may be 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, or 75 parts by mass or less. From these viewpoints, the content B2 may be 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 100 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 100 parts by mass, 50 to 1000 parts by mass, 50 to 500 parts by mass, or 50 to 100 parts by mass.

[0035] The slurry according to this embodiment may contain a basic component, or may not contain a basic component. Examples of basic components include metal hydroxides such as sodium hydroxide, potassium hydroxide, and calcium hydroxide; and ammonia.

[0036] The slurry according to this embodiment may contain an organic solvent. Examples of organic solvents include alcohols such as methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, isopropanol (isopropyl alcohol), and 3-methyl-3-methoxybutanol (MMB); carbonate esters such as ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, and methyl ethyl carbonate; lactones such as butyrolactone and propiolactone; glycols such as ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, hexylene glycol, and tripropylene glycol; and alkylene glycol monoalkyl ethers. Examples include glycol derivatives such as alkylene glycol dialkyl ethers; ether compounds such as tetrahydrofuran, dioxane, dimethoxyethane, polyethylene oxide, ethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, and propylene glycol monopropyl ether; ketone compounds such as acetone and methyl ethyl ketone; phenol compounds such as phenol; amide compounds such as dimethylformamide; sulfolane compounds such as sulfolane; and N-methylpyrrolidone. The organic solvent may contain alcohol, alkoxy alcohol, or 3-methyl-3-methoxybutanol, from the viewpoint of easily obtaining a high polishing speed for the resin material or easily reducing the surface roughness of the polished surface after polishing. That is, the slurry according to this embodiment may contain alcohol, and the alcohol may contain alkoxy alcohol or 3-methyl-3-methoxybutanol.

[0037] The content C1 of organic solvents, alcohols, or alkoxy alcohols may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining a high polishing speed for the resin material or easily reducing the surface roughness of the polished surface after polishing. The content C1 may be 0.01% by mass or more, greater than 0.01% by mass, 0.02% by mass or more, greater than 0.02% by mass, 0.03% by mass or more, 0.05% by mass or more, 0.08% by mass or more, 0.10% by mass or more, 0.30% by mass or more, 0.50% by mass or more, 0.80% by mass or more, 1.0% by mass or more, 1.5% by mass or more, 2.0% by mass or more, 2.5% by mass or more, 3.0% by mass or more, 3.5% by mass or more, or 4.0% by mass or more. The content C1 may be 50.0% by mass or less, 30.0% by mass or less, 20.0% by mass or less, 10.0% by mass or less, 8.0% by mass or less, 6.0% by mass or less, 5.5% by mass or less, 5.0% by mass or less, 4.5% by mass or less, or 4.0% by mass or less. From these viewpoints, the content C1 may be 0.01 to 50.0% by mass, 0.01 to 10.0% by mass, 0.01 to 5.0% by mass, 0.10 to 50.0% by mass, 0.10 to 10.0% by mass, 0.10 to 5.0% by mass, 1.0 to 50.0% by mass, 1.0 to 10.0% by mass, 1.0 to 5.0% by mass, 3.0 to 50.0% by mass, 3.0 to 10.0% by mass, or 3.0 to 5.0% by mass.

[0038] The content of organic solvents, alcohols, or alkoxy alcohols, C2, may be within the following ranges per 100 parts by mass of abrasive grains A or a, from the viewpoint of easily obtaining a high polishing speed for the resin material or easily reducing the surface roughness of the polished surface after polishing. The content of C2 may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, 90 parts by mass or more, or 100 parts by mass or more. The content of C2 may be 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, or 100 parts by mass or less. From these viewpoints, the content of C2 may be 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 200 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 10 to 200 parts by mass, 50 to 1000 parts by mass, 50 to 500 parts by mass, or 50 to 200 parts by mass.

[0039] The slurry according to this embodiment may contain a polymer compound, or may not contain a polymer compound substantially. Examples of polymer compounds include glycerin polymers such as polyglycerin and polyglycerin derivatives; polycarboxylic acids such as polyacrylic acid and polymaleic acid; acrylic polymers such as polyacrylamide and polydimethylacrylamide; polysaccharides such as carboxymethylcellulose, agar, curdlan, dextrin, cyclodextrin, and pullulan; and vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone, and polyacrolein.

[0040] The slurry according to this embodiment may contain a metal corrosion inhibitor, or may not contain a metal corrosion inhibitor at all. Examples of metal corrosion inhibitors include triazole compounds, imidazole compounds, tetrazole compounds, pyrazole compounds, pyrimidine compounds, and the like.

[0041] The slurry according to this embodiment may contain an oxidizing agent or may not substantially contain an oxidizing agent. The slurry according to this embodiment may be prepared by mixing an oxidizing agent before or during use. By adjusting the content of the oxidizing agent, the protruding amount of the metal part can be adjusted when the metal part protrudes from the resin part after polishing as described later. Examples of the oxidizing agent include hydrogen peroxide, potassium periodate, hypochlorous acid, ozone water, and the like.

[0042] The pH (25 °C) of the slurry according to this embodiment may be in the following range. From the viewpoint of easily obtaining a high polishing rate of the resin material, the pH may be 1.0 or more, 1.5 or more, 2.0 or more, 2.5 or more, 3.0 or more, 3.5 or more, 4.0 or more, or 4.5 or more. The pH may be 13.0 or less, 12.5 or less, 12.0 or less, 11.5 or less, 11.0 or less, 10.5 or less, 10.0 or less, 9.5 or less, 9.0 or less, 8.5 or less, 8.0 or less, 7.5 or less, 7.0 or less, 6.5 or less, 6.0 or less, 5.5 or less, 5.0 or less, or 4.5 or less. From these viewpoints, the pH may be 1.0 to 13.0, 1.0 to 9.0, 1.0 to 5.0, 3.0 to 13.0, 3.0 to 9.0, 3.0 to 5.0, 4.0 to 13.0, 4.0 to 9.0, or 4.0 to 5.0. The pH can be measured by the method described in [Examples] below.

[0043] The slurry according to this embodiment may be stored as a storage liquid with a reduced amount of water compared to during polishing. One aspect of the slurry according to this embodiment may be such a storage liquid. The storage liquid can be used by diluting it with water before or during polishing.

[0044] If the slurry according to this embodiment contains at least one additive in addition to abrasive grains, the slurry may be stored as a one-component slurry containing abrasive grains and additives, or as a multi-component slurry (slurry set) having at least a first liquid and a second liquid. In a multi-component slurry, the components of the slurry may be separated into a first liquid and a second liquid so that at least the first liquid and the second liquid are mixed to form the slurry (slurry for polishing). For example, in a multi-component slurry, the components of the slurry according to this embodiment may be stored separated into at least a first liquid and a second liquid, with the first liquid containing abrasive grains and the second liquid containing at least one additive. The components of the slurry may be stored separated into three or more liquids. Each liquid (first liquid, second liquid, etc.) in a multi-component slurry may be mixed before or during polishing. In a multi-liquid slurry, each liquid (first liquid, second liquid, etc.) may be supplied onto a polishing platen, where they may be mixed. The liquids constituting the multi-liquid slurry (first liquid, second liquid, etc.) may be stored as a storage liquid with less water than used during polishing, and may be used by diluting them with water before or during polishing.

[0045] The slurry and abrasive grains according to this embodiment are a slurry and abrasive grains for polishing the resin portion of a polishing target member having a resin portion containing a resin material. The polishing method according to this embodiment includes a polishing step of polishing the resin portion of a polishing target member having a resin portion containing a resin material, using the slurry according to this embodiment. Examples of the resin material include epoxy resin, phenolic resin (such as novolak resin, polyhydroxystyrene, polyimide phenol, etc.), acrylic resin, methacrylic resin, polyester (unsaturated polyester resin and polyester not corresponding to unsaturated polyester resin), polyimide (excluding polyimide phenol), maleimide resin, polyamideimide, polybenzoxazole (PBO), a precursor of polybenzoxazole, polyallyl ether, and the like. The resin portion may contain at least one of these as a main component. The resin material may contain polyimide and may contain phenolic resin. The resin portion may be a cured product of a curable resin or may be uncured. The zeta potential of the resin material may be negative (the zeta potential may be less than 0 mV).

[0046] The polishing target member may further include a metal portion containing a metal material. The metal portion may be covered by the resin portion or may be exposed on the polishing surface together with the resin portion. Examples of the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, manganese, tin, silver, alloys thereof, and the like. The metal material may contain copper and may contain a tin-silver alloy. The polishing step of the polishing method according to this embodiment may be a step of polishing the resin portion and the metal portion. The slurry according to this embodiment may be used in the step of polishing the resin portion and the metal portion.

[0047] In the hybrid bonding described above, by removing the resin portion on the metal portion by polishing, a polished surface (exposed surface) with the metal portion and resin portion exposed can be obtained. Furthermore, by polishing the polished surface (exposed surface) with the metal portion and resin portion exposed, the metal portion can be made to protrude from the resin portion in a direction perpendicular to the polished surface (exposed surface). The polishing step of the polishing method according to this embodiment is a polishing step for polishing the resin portion of a member to be polished having a resin portion and a metal portion covered by the resin portion, and may be a step of polishing the resin portion until the metal portion is exposed, or a step of polishing the resin portion until the metal portion protrudes from the resin portion in a direction perpendicular to the polished surface. The slurry according to this embodiment may be used as a polishing step for polishing the resin portion of a member to be polished having a resin portion and a metal portion covered by the resin portion, and may be used as a step of polishing the resin portion until the metal portion is exposed, or may be used as a step of polishing the resin portion until the metal portion protrudes from the resin portion in a direction perpendicular to the polished surface.

[0048] The shape of the member to be polished is not particularly limited and may be, for example, a film. In the polishing process, it is possible to polish the surface of the member to be polished, to polish the surface where resin material is present, and to polish the surface where both resin material and metal material are present. In the polishing process, it is possible to polish and remove at least a portion of the member to be polished, and to polish and remove at least a portion of the resin material. The member to be polished is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0049] The method for manufacturing a component according to this embodiment includes a component manufacturing step of obtaining a component using a member to be polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the method for manufacturing a component according to this embodiment. The component according to this embodiment is not particularly limited, but may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing an electronic component according to this embodiment obtains an electronic component using a member to be polished by the polishing method according to this embodiment. As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing a semiconductor component according to this embodiment obtains a semiconductor component (e.g., a semiconductor package) using a member to be polished by the polishing method according to this embodiment. The method for manufacturing a component according to this embodiment may include a polishing step of polishing the member to be polished by the polishing method according to this embodiment before the component manufacturing step.

[0050] As one aspect of the component manufacturing process according to this embodiment, the component manufacturing process may include a piece-forming step in which the member to be polished by the polishing method according to this embodiment is pieced into individual pieces. The piece-forming step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing process according to this embodiment, the electronic component manufacturing process according to this embodiment may include a step of obtaining an electronic component (e.g., a semiconductor component) by piece-forming the member to be polished by the polishing method according to this embodiment. As one aspect of the component manufacturing process according to this embodiment, the semiconductor component manufacturing process according to this embodiment may include a step of obtaining a semiconductor component (e.g., a semiconductor package) by piece-forming the member to be polished by the polishing method according to this embodiment.

[0051] The method for manufacturing a part according to this embodiment may include, as one aspect of the part manufacturing process, a connection step of connecting (for example, electrically connecting) a member to be polished by the polishing method according to this embodiment to another connected body. The connected body connected to the member to be polished by the polishing method according to this embodiment is not particularly limited and may be the member to be polished by the polishing method according to this embodiment, or it may be a connected body different from the member to be polished by the polishing method according to this embodiment. In the connection step, the member to be polished and the connected body may be directly connected (connected in a state where the member to be polished and the connected body are in contact), or they may be connected via another member (such as a conductive member). The connection step can be performed before the individualization step, after the individualization step, or before and after the individualization step.

[0052] The connection step may be a step of connecting the surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connected body, or a step of connecting the connecting surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connecting surface of the connected body. The connecting surface of the member to be polished may be the surface of the member to be polished, which has been polished by the polishing method according to this embodiment. By the connection step, a connected body comprising the member to be polished and the connected body can be obtained. In the connection step, if the connecting surface of the member to be polished has a metal part, the connected body may be brought into contact with the metal part. In the connection step, if the connecting surface of the member to be polished has a metal part and the connecting surface of the connected body has a metal part, the metal parts may be brought into contact with each other. The metal part may contain copper, or it may contain a tin-silver alloy.

[0053] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a member to be polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the component according to this embodiment.

[0054] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0055] <Preparation of Polishing Slurry> (Example 1) An aqueous dispersion (dispersant: acetic acid) of abrasive grains (abrasive grain a) having silicon dioxide particles (colloidal silica) and aluminum components present on the surface of the silicon dioxide particles was prepared. This aqueous dispersion was subjected to polishing at a rotation speed of 13,500 min －１ The mixture was centrifuged, and the supernatant was removed to collect the precipitate. This precipitate was air-dried for 12 hours to obtain dry abrasive grains. The atomic ratio of aluminum to silicon (Al / Si) obtained by X-ray photoelectron spectroscopy (XPS) on the surface of these abrasive grains was 0.181. The X-ray photoelectron spectroscopy measurements were performed under the following conditions: Measurements were taken at three different locations on the same sample, and the average value of the three measurements was calculated as the atomic ratio (Al / Si). Apparatus: K-Alpha ＋ (Manufactured by ThermoFisher Scientific) X-ray source: Al-Kα rays (50.4W, 12kV) Measurement range: 200μmΦ Pass energy: 50eV (narrow scan) Step size: 0.100eV (narrow scan) Photoelectron extraction angle: 90° Neutralization conditions: Electron gun and Ar ＋ Gun charge correction: C1s C-C 284.8eV

[0056] The atomic ratio Al / Si at each measurement point was calculated using the following procedure. The "Smart" algorithm, standard on the aforementioned instrument, was used to correct the background of the obtained spectra. This method is a correction technique based on the Shirley method, which removes background signals by considering changes in electron density between peaks. This algorithm is implemented in ThermoFisher Scientific's XPS analysis software and conforms to their technical documentation. The above algorithm was applied to Si2p and Al2p narrow spectra to obtain peak areas, and the atomic ratio Al / Si was obtained based on the elemental concentrations (unit: atom%) converted from these peak areas.

[0057] A polishing slurry was prepared by mixing the above-mentioned aqueous dispersion of abrasive particles with glycine, acetic acid, MMB (3-methyl-3-methoxybutanol), and deionized water. The content of each component in the polishing slurry (reference: total amount of polishing slurry) was as follows: abrasive particle content 4.0% by mass, glycine content 3.0% by mass, acetic acid content 0.65% by mass, and MMB content 4.0% by mass.

[0058] (Example 2) Polishing slurry was prepared in the same manner as in Example 1, except that the type of abrasive grain was changed to an abrasive grain with an atomic ratio of Al / Si of 0.110.

[0059] (Example 3) Polishing slurry was prepared in the same manner as in Example 1, except that the type of abrasive grain was changed to an abrasive grain with an atomic ratio of Al / Si of 0.106.

[0060] (Example 4) Polishing slurry was prepared in the same manner as in Example 1, except that the type of abrasive grain was changed to an abrasive grain with an atomic ratio of Al / Si of 0.101.

[0061] (Comparative Example 1) A polishing slurry was prepared in the same manner as in Example 1, except that the type of abrasive grain was changed to alumina particles.

[0062] (Comparative Example 2) A polishing slurry was prepared in the same manner as in Example 1, except that the type of abrasive grain was changed to silicon oxide particles (colloidal silica without aluminum components).

[0063] <Measurement of Abrasive Grain Size> The average particle size (D50) of the abrasive grains in the polishing slurry described above was measured under the following conditions. The average particle size was 110 nm in Examples 1 to 4 and 200 nm in Comparative Examples 1 to 2. Measurement temperature: 25°C Measurement device: Wyatt Technology Co., Ltd., product name "Mobius" Measurement method: Approximately 4 mL of polishing slurry was placed in a 1 cm square cell, and the cell was then placed in the measurement device. Measurements were performed under the conditions of laser wavelength 532 nm, measurement temperature 25°C, measurement angle 163.5°, and 100 cumulative measurements. The D50 value of the particle size distribution calculated from the scattering intensity converted to mass of the measurement results was obtained as the average particle size.

[0064] <Zeta Potential Measurement> An appropriate amount of abrasive slurry was placed in a product called "DelsaNano C" manufactured by Beckman Coulter, Inc., and measurements were taken twice at 25°C. The average of the displayed zeta potentials was obtained as the zeta potential. In both the example and comparative example, the zeta potential of the abrasive grains was positive.

[0065] <pH Measurement> The pH of the polishing slurry described above was measured under the following conditions. In both the example and comparative example, the pH of the polishing slurry was 4.5. Measurement temperature: 25°C Measuring device: Horiba, Ltd., product name "Model (F-73)" Measurement method: A pH meter was calibrated at three points using phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86), and borate pH standard solution (pH: 9.18) as pH standard solutions. After that, the electrode of the pH meter was placed in the polishing slurry, and the pH was measured using the above measuring device after it had stabilized for more than 2 minutes.

[0066] <Evaluation> Blanket wafers with a diameter of 300 mm and a resin film on their surface were prepared. These included wafers with a polyimide film on the surface and wafers with a phenolic resin film on the surface. These wafers were polished under the following polishing conditions. Wafers with a polyimide film on the surface were polished using the polishing slurries of Examples 1-4 and Comparative Examples 1-2. Wafers with a phenolic resin film on the surface were polished using the polishing slurries of Examples 1-4. Polishing apparatus: F-REX300X (manufactured by Ebara Corporation) Slurry flow rate: 300 mL / min Polishing pad: Foamed polyurethane resin with closed cells (manufactured by Rohm & Haas Japan Co., Ltd., model number: IC1000) Polishing pressure: 20.7 kPa (3.0 psi) Plate rotation speed: 93 min －１ Head rotation speed: 87 min －１ Polishing time: 60 seconds. Cleaning: After polishing, the wafer was washed with water and then dried using the ROTAGONI drying method.

[0067] Using an optical interference film thickness measuring device (device name: NOVA i500) manufactured by Nova Measuring Instruments, the film thickness of the resin film on the aforementioned wafer before and after polishing was measured at 65 points. The 65 film thickness measurements were taken on a straight line including the center of the wafer, with the wafer center as the reference point, at positions of 149 mm, 148 mm, 147 mm, and 145 mm, at 5 mm intervals between 145 mm and -145 mm (140 mm, 135 mm, ..., -135 mm, -140 mm), and at -145 mm, -147 mm, -148 mm, and -149 mm (with the wafer center as the reference point, distances opposite to positive distances are indicated by negative values). The change in film thickness was calculated using the average value of the 65 film thickness measurements. The polishing speed was calculated based on the change in film thickness and the polishing time. The polishing speed of the polyimide was 182 nm / min in Example 1, 161 nm / min in Example 2, 264 nm / min in Example 3, 273 nm / min in Example 4, 158 nm / min in Comparative Example 1, and 25 nm / min in Comparative Example 2. The polishing speed of the phenolic resin was 453 nm / min in Example 1, 123 nm / min in Example 2, 92 nm / min in Example 3, and 94 nm / min in Example 4.

[0068] Using a Bruker AFM device "InsightCAP," the surface roughness (Ra) of a 1 μm × 1 μm area at the center of the surface of the polished polyimide films (polyimide films of Example 1 and Comparative Example 1) was measured in accordance with JIS B 0601:2013. The surface roughness (Ra) was 0.8 nm in Example 1, 2.0 nm or less in Examples 2 to 4, and 2.4 nm in Comparative Example 1.

Claims

1. A polishing method comprising a polishing step of polishing a resin portion of a workpiece having a resin portion containing a resin material using a slurry, wherein the slurry contains abrasive particles having silicon oxide particles and aluminum components present on the surface of the silicon oxide particles.

2. The polishing method according to claim 1, wherein the resin material includes polyimide.

3. The polishing method according to claim 1, wherein the resin material includes a phenolic resin.

4. The polishing method according to any one of claims 1 to 3, wherein the silicon dioxide particles include colloidal silica.

5. The polishing method according to any one of claims 1 to 3, wherein the zeta potential of the abrasive grains is positive.

6. The polishing method according to any one of claims 1 to 3, wherein the average particle size of the abrasive grains is 20 to 200 nm.

7. The polishing method according to any one of claims 1 to 3, wherein the atomic ratio of aluminum to silicon, Al / Si, obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.010 to 1.

000.

8. The polishing method according to any one of claims 1 to 3, wherein the atomic ratio of aluminum to silicon, Al / Si, obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.100 to 0.

200.

9. The polishing method according to any one of claims 1 to 3, wherein the slurry further contains alcohol, and the alcohol content is 1.0 to 50.0% by mass based on the total mass of the slurry.

10. The polishing method according to claim 9, wherein the alcohol comprises an alkoxy alcohol.

11. A slurry for polishing a resin portion of a member to be polished, the slurry comprising abrasive grains having silicon oxide particles and aluminum components present on the surface of the silicon oxide particles.

12. The slurry according to claim 11, wherein the resin material comprises polyimide.

13. The slurry according to claim 11, wherein the resin material includes a phenolic resin.

14. The slurry according to any one of claims 11 to 13, wherein the silicon dioxide particles include colloidal silica.

15. The slurry according to any one of claims 11 to 13, wherein the zeta potential of the abrasive grains is positive.

16. The slurry according to any one of claims 11 to 13, wherein the average particle size of the abrasive grains is 20 to 200 nm.

17. The slurry according to any one of claims 11 to 13, wherein the atomic ratio of aluminum to silicon, Al / Si, obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.010 to 1.

000.

18. The slurry according to any one of claims 11 to 13, wherein the atomic ratio of aluminum to silicon, Al / Si, obtained by X-ray photoelectron spectroscopy on the surface of the abrasive grains is 0.100 to 0.

200.

19. The slurry according to any one of claims 11 to 13, further containing alcohol, wherein the alcohol content is 1.0 to 50.0% by mass based on the total mass of the slurry.

20. The slurry according to claim 19, wherein the alcohol comprises an alkoxy alcohol.

21. Abrasive grains for polishing a resin portion of a member to be polished, the resin portion of which contains a resin material, the abrasive grains comprising silicon oxide particles and an aluminum component present on the surface of the silicon oxide particles.