Adhesive for semiconductor, laminated film, and semiconductor device and method for manufacturing same

Abstract

An adhesive for a semiconductor containing a curable resin component and an inorganic filler, wherein the inorganic filler includes boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45 mass% or less on the basis of the total amount of the adhesive for a semiconductor, and the average particle size of the boron nitride particles is 2 μm or less.

Description

Adhesives for semiconductors, laminated films, semiconductor devices, and methods for manufacturing the same.

[0001] This disclosure relates to adhesives for semiconductors, laminated films, and semiconductor devices and methods for manufacturing the same.

[0002] Traditionally, wire bonding, which uses thin metal wires such as gold wires, has been widely used to connect semiconductor chips and substrates. However, in order to meet the demands for high functionality, high integration, and high speed in semiconductor devices, the flip-chip connection method (FC connection method), which involves forming conductive protrusions called bumps on the semiconductor chip or substrate to directly connect the semiconductor chip and the substrate, is becoming more widespread.

[0003] Known flip-chip connection methods include metal joining using solder, tin, gold, silver, copper, etc., metal joining by applying ultrasonic vibration, and maintaining mechanical contact by the shrinkage force of resin. However, from the standpoint of reliability of the connection, metal joining using solder, tin, gold, silver, copper, etc. is the most common method.

[0004] For example, in the connection between semiconductor chips and substrates, the COB (Chip On Board) connection method, which is widely used in BGA (Ball Grid Array) and CSP (Chip Size Package), is also a flip-chip connection method. Furthermore, the flip-chip connection method is also widely used in the COC (Chip On Chip) connection method, which involves forming bumps or wiring on the semiconductor chip to connect semiconductor chips (see, for example, Patent Document 1 below).

[0005] In packages where further miniaturization, thinning, and high functionality are strongly demanded, chip stack type packages, which stack and multi-stage the aforementioned connection methods, as well as POP (Package On Package) and TSV (Through-Silicone Via), are beginning to become widely adopted. Because packages can be made smaller by arranging components in a three-dimensional rather than planar manner, these technologies are widely used and are effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power, and are attracting attention as next-generation semiconductor wiring technologies.

[0006] Japanese Patent Publication No. 2008-294382

[0007] Incidentally, in the flip-chip connection method described above, flip-chip connections are sometimes made using semiconductor adhesive for purposes such as protecting the metal junctions of the connection points.

[0008] In recent years, flip-chip packages have become more sophisticated and highly integrated. However, as functionality and integration increase, the pitch between wiring becomes narrower, leading to greater heat generation in the package. If heat builds up in the package, the semiconductor chip can become overheated, potentially causing malfunctions. Therefore, semiconductor adhesives are required to have superior thermal conductivity compared to conventional adhesives.

[0009] Furthermore, in the connection process during the manufacturing of flip-chip packages, alignment is typically performed using alignment marks provided on the substrate or semiconductor chip as a guide. When flip-chip connections are made using semiconductor adhesive, the semiconductor chip or substrate to which the adhesive is applied is then aligned. Therefore, the semiconductor adhesive must have sufficient visibility to allow the covered alignment marks to be seen.

[0010] Therefore, this disclosure aims to provide a semiconductor adhesive that has excellent light transmittance while improving thermal conductivity. Furthermore, this disclosure aims to provide a laminated film using such an adhesive. Finally, this disclosure aims to provide a semiconductor device and a method for manufacturing the same using such a semiconductor adhesive.

[0011] This disclosure includes, for example, the following: [1] A semiconductor adhesive comprising a curable resin component and an inorganic filler, wherein the inorganic filler comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45% by mass or less based on the total amount of the semiconductor adhesive, and the average particle diameter of the boron nitride particles is 2 μm or less. [2] The semiconductor adhesive according to [1], wherein the inorganic filler comprises the boron nitride particles and the silica particles. [3] The semiconductor adhesive according to [1] or [2], wherein the inorganic filler comprises the boron nitride particles and the alumina particles. [4] The semiconductor adhesive according to any one of [1] to [3], wherein the content of the inorganic filler is 15 to 80% by mass based on the total amount of the semiconductor adhesive. [5] The semiconductor adhesive according to any one of [1] to [4], wherein the content of the inorganic filler is 70% by mass or less based on the total amount of the semiconductor adhesive. [6] The semiconductor adhesive according to any one of [1] to [5], wherein the proportion of the boron nitride particles in the inorganic filler is 30% by mass or more based on the total amount of the inorganic filler. [7] The semiconductor adhesive according to any one of [1] to [6], wherein the viscosity at 130°C is 45,000 Pa·s or less. [8] The semiconductor adhesive according to any one of [1] to [7], wherein the light transmittance is 0.4% or more. [9] The semiconductor adhesive according to any one of [1] to [8], wherein the thermal conductivity after curing is 0.5 W / mK or more.

[10] The semiconductor adhesive according to any one of [1] to [9], further containing a fluxing agent.

[11] The semiconductor adhesive according to

[10] , wherein the fluxing agent is a carboxylic acid.

[12] The semiconductor adhesive according to any one of [1] to

[11] , wherein the curable resin component comprises a thermosetting resin, a curing agent, and a thermoplastic resin.

[13] A laminated film comprising, in this order, an adhesive layer containing a curable resin component and an inorganic filler, an adhesive layer, and a substrate layer, wherein the inorganic filler comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45% by mass or less based on the total amount of the adhesive layer, and the average particle diameter of the boron nitride particles is 2 μm or less.

[14] A method for manufacturing a semiconductor device comprising a connection structure in which the connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection portions of a plurality of semiconductor chips are electrically connected to each other, the method for manufacturing a semiconductor device comprising the step of sealing at least a part of the connection portion using a semiconductor adhesive described in any one of [1] to

[12] .

[15] A method for manufacturing a semiconductor device according to

[14] , wherein the process includes the steps of: pressing together an alignment-marked semiconductor chip having alignment marks on a main surface and the semiconductor adhesive provided on the main surface with another semiconductor chip via the semiconductor adhesive; and / or pressing together an alignment-marked semiconductor chip having alignment marks on a main surface and the semiconductor adhesive provided on the main surface with a wiring circuit board via the semiconductor adhesive.

[16] A method for manufacturing a semiconductor device according to

[15] , wherein the alignment-marked semiconductor chip is obtained by framing a semiconductor adhesive-coated wafer comprising a wafer having alignment marks on a main surface and the semiconductor adhesive provided on the main surface.

[17] A semiconductor device comprising: a connection structure in which the respective connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other; and / or a connection structure in which the respective connection portions of a plurality of semiconductor chips are electrically connected to each other; and a sealing material that seals at least a part of the connection portion, wherein the sealing material includes a cured product of the semiconductor adhesive according to any one of [1] to

[12] .

[0012] This disclosure provides a semiconductor adhesive that has excellent light transmittance while improving thermal conductivity. Furthermore, this disclosure provides a laminated film using such an adhesive. Finally, this disclosure provides a semiconductor device and a method for manufacturing the same using such a semiconductor adhesive.

[0013] This is a schematic cross-sectional view showing one embodiment of a laminated film. This is a schematic cross-sectional view showing one embodiment of a semiconductor device according to the present disclosure. This is a schematic cross-sectional view showing another embodiment of a semiconductor device according to the present disclosure. This is a schematic cross-sectional view showing another embodiment of a semiconductor device according to the present disclosure. This is a schematic cross-sectional view showing an example of a method for manufacturing the semiconductor device shown in Figure 4. This is a schematic cross-sectional view showing another embodiment of a semiconductor device according to the present disclosure. This is a schematic cross-sectional view showing an example of a method for manufacturing the semiconductor device shown in Figure 6.

[0014] Hereinafter, embodiments for carrying out this disclosure will be described in detail, with reference to drawings as appropriate. However, this disclosure is not limited to the following embodiments. In this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or the corresponding methacrylate. "A or B" may include either A or B, or both.

[0015] Furthermore, in this specification, numerical ranges indicated using "~" represent a range that includes the numbers listed before and after "~" as the minimum and maximum values, respectively. In addition, in numerical ranges described in stages within this specification, the upper or lower limit of a numerical range in one stage may be replaced with the upper or lower limit of a numerical range in another stage. Also, in numerical ranges described within this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples.

[0016] <Semiconductor Adhesive> The semiconductor adhesive according to this embodiment is a semiconductor adhesive containing a curable resin component and an inorganic filler, wherein the inorganic filler contains boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of boron nitride particles is 45% by mass or less based on the total amount of the semiconductor adhesive, and the average particle diameter of the boron nitride particles is 2 μm or less. According to the semiconductor adhesive according to this embodiment, it is possible to improve thermal conductivity while having excellent light transmittance. The semiconductor adhesive is a semiconductor adhesive used for sealing connection parts in a semiconductor device having a connection structure in which the connection parts of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection parts of a plurality of semiconductor chips are electrically connected to each other.

[0017] (Curable resin component) The curable resin component may contain (a) a thermosetting resin, (b) a curing agent, and (c) a thermoplastic resin.

[0018] (a) Thermosetting resins) Examples of thermosetting resins include epoxy resins, urea resins, melamine resins, phenolic resins, etc. Epoxy resins may be used as thermosetting resins from the viewpoint of good curability and excellent adhesion. Thermosetting resins can be used individually or in combination of two or more types.

[0019] Examples of epoxy resins include epoxy resins having two or more epoxy groups in their molecule, such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, phenol aralkyl type epoxy resin, biphenyl type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, and various polyfunctional epoxy resins. These epoxy resins can be used individually or in combination of two or more types.

[0020] The epoxy resin content may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more, per 100 parts by mass of the curable resin component. The epoxy resin content may be 90 parts by mass or less, 80 parts by mass or less, or 70 parts by mass or less, per 100 parts by mass of the curable resin component. The epoxy resin content may be 40 to 90 parts by mass or 50 to 70 parts by mass, per 100 parts by mass of the curable resin component.

[0021] The epoxy resin content may be 10 parts by mass or more, 20 parts by mass or more, or 25 parts by mass or more, per 100 parts by mass of semiconductor adhesive. The epoxy resin content may be 50 parts by mass or less, 40 parts by mass or less, or 35 parts by mass or less, per 100 parts by mass of semiconductor adhesive. The epoxy resin content may be 10 to 50 parts by mass or 20 to 40 parts by mass, per 100 parts by mass of semiconductor adhesive.

[0022] (b) Curing agent Examples of curing agents include phenolic resin curing agents, acid anhydride curing agents, amine curing agents, imidazole curing agents, and phosphine curing agents. When the curing agent contains phenolic hydroxyl groups, acid anhydrides, amines, or imidazoles, it tends to exhibit flux activity that suppresses the formation of oxide films at the connection site, and connection reliability and insulation reliability can be easily improved.

[0023] Examples of phenolic resin curing agents include curing agents having two or more phenolic hydroxyl groups in their molecule, such as phenol novolac, cresol novolac, phenol aralkyl resin, cresol naphthol formaldehyde polycondensate, triphenylmethane-type polyfunctional phenol, and various polyfunctional phenolic resins. Phenolic resin curing agents can be used individually or in combination of two or more types.

[0024] When the curable resin component includes epoxy resin, the equivalent ratio of the phenolic resin-based curing agent to the epoxy resin (phenolic hydroxyl group / epoxy group, molar ratio) may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of good curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability tends to improve and adhesion improves, and when it is 1.5 or lower, excessive unreacted phenolic hydroxyl groups do not remain, water absorption is kept low, and insulation reliability tends to improve further.

[0025] Examples of acid anhydride-based curing agents include methylcyclohexanetetracarboxylic acid dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid dianhydride, and ethylene glycol bisanhydrotrimellitate. Acid anhydride-based curing agents can be used individually or in combination of two or more.

[0026] When the curable resin component includes epoxy resin, the equivalent ratio of the acid anhydride-based curing agent to the epoxy resin (acid anhydride group / epoxy group, molar ratio) may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0, from the viewpoint of excellent curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability tends to improve and adhesion improves, and when it is 1.5 or lower, excessive unreacted acid anhydride does not remain, water absorption is kept low, and insulation reliability tends to improve further.

[0027] Examples of amine-based curing agents include dicyandiamide.

[0028] When the curable resin component includes epoxy resin, the equivalent ratio of the amine-based curing agent to the epoxy resin (amine / epoxy group, molar ratio) may be 0.3 to 1.5, 0.4 to 1.0, or 0.5 to 1.0 from the viewpoint of excellent curability, adhesion, and storage stability. When the equivalent ratio is 0.3 or higher, curability tends to improve and adhesion improves, and when it is 1.5 or lower, there is no excess unreacted amine remaining, and insulation reliability tends to improve further.

[0029] Examples of imidazole-based curing agents include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, and 2,4-diamino-6 Examples include -[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and adducts of epoxy resins and imidazoles. Among these, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimelitate, 1-cyanoethyl-2-phenylimidazolium trimelitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct, 2-phenylimidazole isocyanurate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole are preferred. Imidazole-based curing agents can be used individually or in combination of two or more. They may also be used as latent curing agents in which they are microencapsulated.

[0030] The content of the imidazole-based curing agent may be 0.1 to 20 parts by mass, 0.1 to 10 parts by mass, 0.1 to 5 parts by mass, or 0.5 to 5 parts by mass with respect to 100 parts by mass of the curable resin component. When the content of the imidazole-based curing agent is 0.1 part by mass or more, the curability tends to be improved. When it is 20 parts by mass or less, the adhesive composition does not cure before the metal bond is formed, and connection failures are less likely to occur.

[0031] Examples of the phosphine-based curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium (4-fluorophenyl)borate.

[0032] The content of the phosphine-based curing agent may be 0.1 to 10 parts by mass, or 0.1 to 5 parts by mass with respect to 100 parts by mass of the curable resin component. When the content of the phosphine-based curing agent is 0.1 part by mass or more, the curability tends to be improved. When it is 10 parts by mass or less, the semiconductor adhesive does not cure before the metal bond is formed, and connection failures are less likely to occur.

[0033] The phenolic resin-based curing agent, acid anhydride-based curing agent, and amine-based curing agent can each be used alone or in combination of two or more. The imidazole-based curing agent and the phosphine-based curing agent may each be used alone, or may be used together with the phenolic resin-based curing agent, acid anhydride-based curing agent, or amine-based curing agent.

[0034] From the viewpoint of excellent curability, the curing agent may be a combination of phenol and imidazole, a combination of acid anhydride and imidazole, a combination of amine and imidazole, or imidazole used alone. Since productivity is improved when connecting in a short time, imidazole used alone, which is excellent in rapid curability, may be used. In this case, since volatile components such as low molecular components can be suppressed when curing in a short time, generation of voids can also be easily suppressed.

[0035] The content of the curing agent may be 0.1 to 20 parts by mass, or 0.1 to 10 parts by mass with respect to 100 parts by mass of the curable resin component.

[0036] ((c) Thermoplastic resin) Examples of the thermoplastic resin include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, (meth)acrylic resin, polyester resin, polyethylene resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, urethane resin, acrylic rubber, etc. From the viewpoint of excellent heat resistance and film-forming property, the thermoplastic resin may be phenoxy resin, polyimide resin, (meth)acrylic resin, acrylic rubber, cyanate ester resin, polycarbodiimide resin, etc., and may be phenoxy resin, polyimide resin, (meth)acrylic resin, acrylic rubber. The thermoplastic resin can be used alone or in combination of two or more kinds.

[0037] As the phenoxy resin, for example, ZX1356-2 and FX-293 manufactured by Nippon Steel Chemical & Material Co., Ltd. can be used. As the urethane resin, for example, T-8175N manufactured by DIC Covestro Polymer Co., Ltd., which is a polyurethane, can be used. As the (meth)acrylic resin, for example, an acrylic block copolymer which is a block copolymer of at least one compound of (meth)acrylate compounds such as (meth)acrylic acid esters such as (meth)acrylic acid and methyl (meth)acrylate can be used. As the acrylic block copolymer, for example, LA4285, LA2330, LA2140 (all manufactured by Kuraray Co., Ltd.), which are block copolymers of methyl methacrylate and butyl acrylate, can be used. From the viewpoint of more excellent thermal conductivity of the semiconductor adhesive, the thermoplastic resin may be a phenoxy resin having a structure that is likely to take a crystal structure (a structure having many aromatic rings).

[0038] The glass transition temperature (Tg) of the thermoplastic resin may be 120°C or lower, 100°C or lower, or 85°C or lower, from the viewpoint of excellent adhesion of the semiconductor adhesive to the substrate and chip. By including a thermoplastic resin having a Tg of 120°C or lower in the semiconductor adhesive, the curing reaction can be suppressed. As a result, the semiconductor adhesive is more easily embedded in irregularities such as bumps formed on the semiconductor chip, electrodes formed on the substrate, and wiring patterns, so that air bubbles are less likely to remain and the generation of voids is easily suppressed. Furthermore, if the semiconductor adhesive includes a thermoplastic resin having a Tg of room temperature (25°C) or higher, it becomes easier to form the semiconductor adhesive into a film or membrane.

[0039] In this specification, the Tg of a thermoplastic resin refers to the Tg measured using differential scanning calorimetry (DSC, PerkinElmer DSC-7 model) under the conditions of a sample amount of 10 mg, a heating rate of 10°C / min, and a measurement atmosphere of air.

[0040] The weight-average molecular weight of the thermoplastic resin may be 10,000 or more, 30,000 or more, 40,000 or more, or 50,000 or more, from the viewpoint of excellent film-forming properties for semiconductor adhesives. The weight-average molecular weight of the thermoplastic resin may be 1,000,000 or less, or 500,000 or less, from the viewpoint of excellent film-processability for semiconductor adhesives.

[0041] In this specification, weight-average molecular weight refers to the weight-average molecular weight measured in polystyrene equivalent using high-performance liquid chromatography (Shimadzu C-R4A).

[0042] When the curable resin component contains both epoxy resin and thermoplastic resin, the epoxy resin content may be 1 to 500 parts by mass, 5 to 400 parts by mass, or 10 to 300 parts by mass per 100 parts by mass of thermoplastic resin. When the epoxy resin content is within these ranges, the semiconductor adhesive has sufficient curability and excellent adhesive strength, and it is easier to form the semiconductor adhesive into a film or membrane.

[0043] The content of thermoplastic resin may be 0.1 to 50 parts by mass, 1 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 35 parts by mass per 100 parts by mass of the curable resin component.

[0044] The content of the curable resin component may be 5 to 70% by mass, 5 to 50% by mass, 5 to 30% by mass, 10 to 70% by mass, 10 to 50% by mass, 10 to 30% by mass, or 30 to 50% by mass, based on the total amount of semiconductor adhesive.

[0045] (Inorganic Filler) The semiconductor adhesive of this embodiment comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles. From the viewpoint of having a better thermal conductivity for the semiconductor adhesive, the semiconductor adhesive of this embodiment may contain boron nitride particles and silica particles, or boron nitride particles and alumina particles.

[0046] The purity of the boron nitride particles may be 99.0% by mass or higher, 99.5% by mass or higher, 99.9% by mass or higher, or 100% by mass, from the viewpoint of achieving superior thermal conductivity for semiconductor adhesives.

[0047] The shape of boron nitride particles is not particularly limited, but examples include flaky and spherical shapes. The flaky shape of the boron nitride particles facilitates the formation of heat transfer paths, resulting in superior thermal conductivity for semiconductor adhesives.

[0048] The average particle diameter of boron nitride particles is 2 μm or less. From the viewpoint of improving the flatness when semiconductor adhesives are made into films and thinning them, the average particle diameter of boron nitride particles may be 1.5 μm or less, 1.0 μm or less, or 0.8 μm or less. From the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity and suppressing excessive viscosity of semiconductor adhesives, thereby suppressing a decrease in the embedding ability of electrodes, etc., the average particle diameter of boron nitride particles may be 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more. From these viewpoints, the average particle diameter of boron nitride particles may be 0.1 to 2 μm, or 0.3 to 1.0 μm, or 0.5 to 0.8 μm.

[0049] In this specification, "average particle diameter" refers to the particle diameter at the point corresponding to 50% of the total volume when the cumulative frequency distribution curve by particle diameter is calculated with the total volume of particles set to 100%, and can be measured using a particle size distribution analyzer that uses laser diffraction scattering. Furthermore, the position of the maximum peak in the volume frequency particle size distribution coincides with the "average particle diameter."

[0050] The content of boron nitride particles in semiconductor adhesives may be 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, or 30% by mass or more, based on the total amount of semiconductor adhesive, from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity, and may be 50% by mass or less, 45% by mass or less, 40% by mass or less, or 35% by mass or less, from the viewpoint of making the light transmittance better and making alignment marks easier to recognize. From these viewpoints, the content of boron nitride particles in semiconductor adhesives may be 10 to 50% by mass, 20 to 40% by mass or 25 to 35% by mass, based on the total amount of semiconductor adhesive.

[0051] The proportion of boron nitride particles in the inorganic filler may be 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, or 30% by mass or more, based on the total amount of inorganic filler, from the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity. From the viewpoint of having superior light transmittance and making alignment marks easier to recognize, it may be 90% by mass or less, 85% by mass or less, 80% by mass or less, or 75% by mass or less. From these viewpoints, the proportion of boron nitride particles in the inorganic filler may be 10 to 90% by mass, 20 to 80% by mass or 30 to 75% by mass, based on the total amount of inorganic filler.

[0052] The mass ratio of boron nitride particles to the curable resin component (mass-based content of boron nitride particles / mass-based content of the curable resin component) may be 0.1 or higher, 0.2 or higher, 0.3 or higher, or 0.4 or higher from the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity, and may be 1 or lower, 0.9 or lower, 0.8 or lower, or 0.7 or lower from the viewpoint of having superior light transmittance and making alignment marks easier to recognize. From these viewpoints, the mass ratio of boron nitride particles to the curable resin component (mass-based content of boron nitride particles / mass-based content of the curable resin component) may be 0.1 to 1, 0.2 to 0.9, 0.3 to 0.8, or 0.4 to 0.7.

[0053] From the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity, silica particles may be included as an inorganic filler. The purity of the silica (silicon oxide) in the silica particles may be 99.0% by mass or higher, 99.5% by mass or higher, 99.9% by mass or higher, or 100% by mass, from the viewpoint of achieving superior thermal conductivity in semiconductor adhesives.

[0054] The silica particles may have their surfaces treated to further improve visibility, dispersibility, and adhesion. Examples of surface treatment agents include glycidyl (epoxy) compounds, amine compounds, phenyl compounds, phenylamino compounds, (meth)acrylic compounds (for example, compounds having the structure represented by the following general formula (1)), and vinyl compounds having the structure represented by the following general formula (2).

[0055] [R １１ represents a hydrogen atom or an alkyl group, and R １２ represents an alkylene group.]

[0056] As the filler surface-treated with the compound having the structure represented by the formula (1), examples include an acrylic surface-treated filler in which R １１ is a hydrogen atom, a methacrylic surface-treated filler in which R １１ is a methyl group, an ethacrylic (ethylacrylic) surface-treated filler in which R １１ is an ethyl group, and the like. From the viewpoints of the reactivity between the resin contained in the semiconductor adhesive and the surface of the semiconductor substrate and bond formation, R １１ may be a hydrogen atom or a methyl group, which is a non-bulky substituent. It may be an acrylic surface treatment or a methacrylic surface treatment filler. There is no particular limitation on the alkylene group of R １２ , but a higher weight average molecular weight results in fewer volatile components.

[0057] [R ２１ , R ２２ and R ２３ each independently represent a hydrogen atom or an alkyl group, and R ２４ represents an alkylene group.]

[0058] R ２１ , R ２２ and R ２３ may be non-bulky substituents from the viewpoint of not reducing the reactivity. Also, they may be substituents that improve the reactivity of the vinyl group in the formula (2). There is no particular limitation on R ２４ , but from the viewpoint of making it difficult to volatilize and reducing voids, the weight average molecular weight may be high. Also, R ２１ , R ２２ , R ２３ and R ２４ may be selected based on the ease of surface treatment. For example, R ２１ , R ２２ and R ２３ may be a hydrogen atom or a methyl group.

[0059] As a surface treatment agent, silane treatments such as epoxy silanes, amino silanes, (meth)acrylic silanes, and vinyl silanes may be used, depending on the ease of surface treatment. Furthermore, from the viewpoint of achieving superior transparency in semiconductor adhesives, silica particles with a silane treatment on the silica surface may be used. As a surface treatment agent, glycidyl, phenylamino, (meth)acrylic, and vinyl compounds may be used, depending on the viewpoint of excellent dispersibility, fluidity, and adhesive strength. As a surface treatment agent, vinyl, phenylamino, and (meth)acrylic compounds may be used, depending on the viewpoint of excellent storage stability.

[0060] The average particle diameter of silica particles may be 1.5 μm or less, 1.0 μm or less, 0.5 μm or less, or 0.3 μm or less, from the viewpoint of improving the flatness when the semiconductor adhesive is made into a film and thinning it. The average particle diameter of silica particles may be 0.05 μm or more, 0.1 μm or more, or 0.15 μm or more, from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity and suppressing the viscosity of the semiconductor adhesive from becoming too high, thereby suppressing a decrease in the embedding ability of electrodes, etc. From these viewpoints, the average particle diameter of silica particles may be 0.05 to 1.5 μm, 0.1 to 0.5 μm, or 0.15 to 0.3 μm.

[0061] The absolute difference between the average particle diameter of silica particles and the average particle diameter of boron nitride particles may be less than 1 μm, 0.8 μm or less, or 0.6 μm or less, from the viewpoint of achieving better light transmittance and easier recognition of alignment marks, and from the viewpoint of suppressing excessive viscosity of semiconductor adhesives and suppressing a decrease in the embedding ability of electrodes, etc. The absolute difference between the average particle diameter of silica particles and the average particle diameter of boron nitride particles may be 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more. From these viewpoints, the absolute difference between the average particle diameter of silica particles and the average particle diameter of boron nitride particles may be 0.1 μm or more and less than 1 μm, 0.3 to 0.8 μm, or 0.5 to 0.6 μm.

[0062] The silica particle content in semiconductor adhesives may be 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, or 25% by mass or more, based on the total amount of semiconductor adhesive, from the viewpoint of achieving better light transmittance and making alignment marks easier to recognize. From the viewpoint of preventing the viscosity of the semiconductor adhesive from becoming too high and preventing a decrease in the embedding ability of electrodes, etc., and from the viewpoint of making the semiconductor adhesive more likely to have better thermal conductivity, the silica particle content may be 5% by mass or less, 40% by mass or less, 35% by mass or less, or 30% by mass or less. From these viewpoints, the silica particle content in semiconductor adhesives may be 5 to 50% by mass, 15 to 40% by mass, or 20 to 35% by mass, based on the total amount of semiconductor adhesive.

[0063] The proportion of silica particles in the inorganic filler may be 10% by mass or more, 15% by mass or more, 20% by mass or more, or 25% by mass or more, based on the total amount of inorganic filler, from the viewpoint of having better light transmittance and making alignment marks easier to recognize. From the viewpoint of semiconductor adhesives easily having better thermal conductivity, the proportion may be 90% by mass or less, 85% by mass or less, 80% by mass or less, 75% by mass or less, or 70% by mass or less. From these viewpoints, the proportion of silica particles in the inorganic filler may be 10 to 90% by mass, 15 to 85% by mass, 20 to 80% by mass, or 25 to 75% by mass, based on the total amount of inorganic filler.

[0064] The mass ratio of silica particles to the curable resin component (content by mass of silica particles / content by mass of the curable resin component) may be 0.1 or higher, 0.2 or higher, 0.3 or higher, 0.4 or higher, or 0.5 or higher, from the viewpoint of achieving better light transmittance and easier recognition of alignment marks. From the viewpoint of preventing the viscosity of the semiconductor adhesive from becoming too high, preventing a decrease in the embedding ability of electrodes, etc., and from the viewpoint of making it easier for the semiconductor adhesive to have better thermal conductivity, it may be 1 or lower, 0.9 or lower, 0.8 or lower, 0.7 or lower, or 0.6 or lower. From these viewpoints, the mass ratio of silica particles to the curable resin component (content by mass of silica particles / content by mass of the curable resin component) may be 0.1 to 1, 0.2 to 0.9, 0.3 to 0.8, or 0.4 to 0.7.

[0065] The mass ratio of silica particles to boron nitride particles (content by mass of silica particles / content by mass of boron nitride particles) may be 0.1 or higher, 0.3 or higher, or 0.5 or higher from the viewpoint of achieving better light transmittance and easier recognition of alignment marks, and may be 5 or lower, 4 or lower, or 3 or lower from the viewpoint of making semiconductor adhesives more likely to have better thermal conductivity. From these viewpoints, the mass ratio of silica particles to boron nitride particles (content by mass of silica particles / content by mass of boron nitride particles) may be 0.1 to 5, 0.3 to 4, or 0.5 to 3.

[0066] From the viewpoint of achieving superior thermal conductivity, semiconductor adhesives may contain alumina particles as an inorganic filler. The alumina particles may be α-alumina. From the viewpoint of achieving superior thermal conductivity of semiconductor adhesives, the purity of the alumina in the alumina particles may be 99.0% by mass or more, 99.5% by mass or more, 99.9% by mass or more, or 100% by mass.

[0067] The shape of the alumina particles is not particularly limited, but examples include spherical, nearly spherical, polyhedron, needle-shaped, and plate-shaped particles.

[0068] The alumina particles, like the silica particles, may have their physical properties appropriately adjusted by the surface treatment described above.

[0069] The average particle size of the alumina particles may be 1.5 μm or less, 1.0 μm or less, 0.5 μm or less, or 0.3 μm or less, from the viewpoint of improving the flatness when the semiconductor adhesive is made into a film and thinning it. The average particle size of the alumina particles may be 0.05 μm or more, 0.1 μm or more, or 0.15 μm or more, from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity and suppressing the viscosity of the semiconductor adhesive from becoming too high, thereby suppressing a decrease in the embedding ability of electrodes, etc. From these viewpoints, the average particle size of the alumina particles may be 0.05 to 1.5 μm, 0.1 to 1.0 μm, or 0.15 to 0.5 μm.

[0070] The absolute difference between the average particle diameter of alumina particles and the average particle diameter of boron nitride particles may be less than 1 μm, 0.8 μm or less, or 0.6 μm or less, from the viewpoint of achieving better light transmittance and easier recognition of alignment marks, and from the viewpoint of suppressing excessive viscosity of the semiconductor adhesive and suppressing a decrease in the embedding ability of electrodes, etc. The absolute difference between the average particle diameter of alumina particles and the average particle diameter of boron nitride particles may be 0.1 μm or more, 0.3 μm or more, or 0.5 μm or more. From these viewpoints, the absolute difference between the average particle diameter of alumina particles and the average particle diameter of boron nitride particles may be 0.1 μm or more and less than 1 μm, 0.3 to 0.8 μm, or 0.5 to 0.6 μm.

[0071] The alumina particle content in semiconductor adhesives may be 5% by mass or more, 10% by mass or more, 20% by mass or more, 30% by mass or more, or 40% by mass or more, based on the total amount of semiconductor adhesive, from the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity. From the viewpoint of preventing the viscosity of the semiconductor adhesive from becoming too high and preventing a decrease in the embedding ability of electrodes, etc., and from the viewpoint of preventing damage to the coating blade when coating the semiconductor adhesive, it may be 70% by mass or less, 60% by mass or less, or 50% by mass or less. From these viewpoints, the alumina particle content in semiconductor adhesives may be 5 to 70% by mass, 20 to 60% by mass, or 40 to 50% by mass, based on the total amount of semiconductor adhesive.

[0072] The proportion of alumina particles in the inorganic filler may be 10% by mass or more, 15% by mass or more, 20% by mass or more, or 25% by mass or more, based on the total amount of inorganic filler, from the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity and superior light transmittance, making alignment marks easier to recognize. From the viewpoint of preventing damage to the coating blade when coating the semiconductor adhesive, it may be 90% by mass or less, 85% by mass or less, 80% by mass or less, 75% by mass or less, or 70% by mass or less. From these viewpoints, the proportion of alumina particles in the inorganic filler may be 10 to 90% by mass, 15 to 85% by mass, 20 to 80% by mass, or 25 to 75% by mass, based on the total amount of inorganic filler.

[0073] The mass ratio of alumina particles to the curable resin component (alumina particle content by mass / curable resin component content by mass) may be 0.1 or higher, 0.2 or higher, 0.3 or higher, or 0.4 or higher from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity and better light transmittance, making alignment marks easier to recognize. It may also be 1.5 or lower, 1.4 or lower, 1.3 or lower, 1.2 or lower, or 1.1 or lower from the viewpoint of preventing damage to the coating blade when applying the semiconductor adhesive. From these viewpoints, the mass ratio of alumina particles to the curable resin component (alumina particle content by mass / curable resin component content by mass) may be 0.1 to 1.5, 0.2 to 1.4, 0.3 to 1.3, or 0.4 to 1.2.

[0074] The mass ratio of alumina particles to boron nitride particles (alumina particle content by mass / boron nitride particle content by mass) may be 0.1 or higher, 0.5 or higher, or 1 or higher from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity and superior light transmittance, making alignment marks easier to recognize. It may also be 5 or lower, 4 or lower, or 3 or lower from the viewpoint of preventing damage to the coating blade when applying the semiconductor adhesive. From these viewpoints, the mass ratio of alumina particles to boron nitride particles (alumina particle content by mass / boron nitride particle content by mass) may be 0.1 to 5, 0.5 to 4, or 1 to 3.

[0075] The average particle size of the inorganic filler may be 2 μm or less, 1.5 μm or less, or 1 μm or less, from the viewpoint of improving film formation when the semiconductor adhesive is made into a film and enabling thin-film formation. The average particle size of the inorganic filler may be 0.05 μm or more, 0.1 μm or more, or 0.2 μm or more, from the viewpoint of making the semiconductor adhesive more likely to have superior thermal conductivity and from the viewpoint of suppressing a decrease in the embedding ability of electrodes, etc., due to the viscosity of the semiconductor adhesive becoming too high. The average particle size of the inorganic filler can be measured using a particle size distribution analyzer using laser diffraction scattering, etc., and can also be estimated from the sum of the products of the mass ratio of each particle contained in the inorganic filler and the average particle size of each particle. From these viewpoints, the average particle size of the inorganic filler may be 0.05 to 2 μm, 0.1 to 1.5 μm, or 0.2 to 1 μm.

[0076] The total inorganic filler content in semiconductor adhesives may be 15% by mass or more, 20% by mass or more, 30% by mass or more, 40% by mass or more, or 50% by mass or more, based on the total amount of semiconductor adhesive, from the viewpoint of making semiconductor adhesives more likely to have superior thermal conductivity. From the viewpoint of suppressing the viscosity of semiconductor adhesives from becoming too high and suppressing a decrease in the embedding ability of electrodes, etc., it may be 80% by mass or less, 70% by mass or less, 68% by mass or less, 60% by mass or less, 55% by mass or less, or 50% by mass or less. From these viewpoints, the total inorganic filler content in semiconductor adhesives may be 15 to 80% by mass, 20 to 70% by mass, 30 to 60% by mass, or 40 to 55% by mass, based on the total amount of semiconductor adhesive.

[0077] (Flux Agent) The semiconductor adhesive according to this embodiment may further contain a flux agent (i.e., a flux activator that exhibits flux activity (activity to remove oxides, impurities, etc.)). Examples of flux agents include nitrogen-containing compounds having lone pairs of electrons (imidazoles, amines, etc.), carboxylic acids, phenols, and alcohols.

[0078] The fluxing agent may be an organic acid that reacts with the epoxy resin. Organic acids exhibit stronger fluxing activity than alcohols and are more likely to improve connectivity.

[0079] When the curable resin component contains epoxy resin, it reacts with the epoxy resin and does not exist in a free state in the cured product of the semiconductor adhesive, thus preventing a decrease in insulation reliability. Therefore, it may be an organic acid or a carboxylic acid.

[0080] Examples of carboxylic acids include aliphatic saturated carboxylic acids such as ethaneic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, heptadecanoic acid, and octadecanoic acid; aliphatic unsaturated carboxylic acids such as oleic acid, linoleic acid, linolenic acid, arachidonic acid, docosahesaenoic acid, and eicosapentaenoic acid; aliphatic dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, and adipic acid; aromatic carboxylic acids such as benzoic acid, phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, trimesic acid, hemimellitic acid, pyromellitic acid, pentaneic acid, and mesic acid; and maleic acid and fumaric acid. Examples of carboxylic acids having a hydroxyl group include lactic acid, malic acid, citric acid, and salicylic acid.

[0081] Among carboxylic acids, dicarboxylic acids are preferable because they are less volatile than monocarboxylic acids, thus suppressing void formation. Furthermore, they are less reactive than tricarboxylic acids at low temperatures (below bonding temperature, for example, below 100°C) during film formation, lamination, and preheating, preventing excessive viscosity and suppressing poor connections.

[0082] A carboxylic acid may be a carboxylic acid having one or more alkyl groups at the 2nd or 3rd position from the carboxyl group. Examples of carboxylic acids having such alkyl groups include 2-methylglutaric acid and 3-methylglutaric acid.

[0083] The flux content may be 0.5 parts by mass or more per 100 parts by mass of semiconductor adhesive. It may also be 10 parts by mass or less, or 5 parts by mass or less, per 100 parts by mass of semiconductor adhesive. The flux compound content may be, for example, 0.5 to 10 parts by mass or 0.5 to 5 parts by mass, based on the amount of semiconductor adhesive.

[0084] (Other) The semiconductor adhesive of this embodiment may further contain additives such as organic fillers (resin fillers), antioxidants, silane coupling agents (excluding compounds corresponding to fluxes), titanium coupling agents, and leveling agents. These additives can be used individually or in combination of two or more. The content of these additives should be adjusted as appropriate so that the effects of each additive are expressed.

[0085] Polyurethane, polyimide, and the like can be used as organic fillers. Compared to inorganic fillers, resin fillers can be made flexible at high temperatures such as 260°C, which is effective in improving film formation.

[0086] (Thermal Conductivity) The semiconductor adhesive according to this embodiment may have a thermal conductivity of 0.5 W / mK or higher after curing. By having a thermal conductivity of 0.5 W / mK or higher after curing of the semiconductor adhesive, it is possible to provide a semiconductor adhesive with excellent thermal conductivity.

[0087] The thermal conductivity of semiconductor adhesives after curing may be 0.7 W / mK or higher, 1.0 W / mK or higher, or 1.3 W / mK or higher, from the viewpoint of superior heat dissipation.

[0088] The thermal conductivity of semiconductor adhesives after curing can be calculated by measuring the thermal diffusivity using the laser flash method (Xe-flash method) and multiplying the specific heat and density by the thermal diffusivity. Specifically, the thermal conductivity can be obtained by the method described in the examples below.

[0089] The semiconductor adhesive can be cured by heating at 200°C for 1 hour. Specifically, the cured semiconductor adhesive can be obtained by the method described in the examples below.

[0090] (Light transmittance) When the semiconductor adhesive is made into a 4 μm film, the light transmittance may be 0.4% or higher. A light transmittance of 0.4% or higher makes alignment marks easier to recognize. From the viewpoint of making alignment marks easier to recognize, the light transmittance may be 0.5% or higher, 0.8% or higher, or 1.0% or higher. The light transmittance can be measured by the method described in the examples below.

[0091] (Viscosity) The viscosity (melt viscosity) of the semiconductor adhesive at 130°C may be 45,000 Pa·s or less, 40,000 Pa·s or less, 30,000 Pa·s or less, or 20,000 Pa·s or less, from the viewpoint of facilitating the temporary fixing of semiconductor chips in a specific temperature range (e.g., 60 to 170°C). From the viewpoint of suppressing the semiconductor adhesive from leaking out of the semiconductor chip during bonding, it may be 400 Pa·s or more, 1,000 Pa·s or more, 1,500 Pa·s or more, or 2,000 Pa·s or more. From these viewpoints, the viscosity (melt viscosity) of the semiconductor adhesive at 130°C may be 400 to 45,000 Pa·s, 400 to 40,000 Pa·s, 400 to 30,000 Pa·s, or 400 to 20,000 Pa·s. The viscosity (melt viscosity) of semiconductor adhesives at 130°C can be measured by the method described in the examples below.

[0092] The semiconductor adhesive of this embodiment can be formed in the form of a film or a thin film. The thickness of the film or thin film semiconductor adhesive (film adhesive) may be, for example, 100 μm or less, 80 μm or less, 50 μm or less, or 30 μm or less. There is no particular lower limit to the thickness of the film adhesive, but it may be 1 μm or more, or 5 μm or more. The thickness of the film adhesive may be 1 to 100 μm, or 5 to 80 μm.

[0093] <Laminated Film> The semiconductor adhesive described above can be used as the adhesive layer of a laminated film comprising an adhesive layer, a tack layer, and a base layer in this order. That is, a laminated film according to another embodiment of the present disclosure comprises an adhesive layer formed by the semiconductor adhesive described above, a tack layer, and a base layer in this order. In other words, a laminated film according to another embodiment of the present disclosure comprises an adhesive layer containing a curable resin component and an inorganic filler, a tack layer, and a base layer in this order, wherein the inorganic filler comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of boron nitride particles is 45% by mass or less based on the total amount of the adhesive layer, and the average particle diameter of the boron nitride particles is 2 μm or less.

[0094] Figure 1 shows a schematic cross-sectional view illustrating one embodiment of a laminated film. The laminated film 5 according to this embodiment comprises an adhesive layer (film-like adhesive) 1 and a backgrind tape 4 consisting of a base layer 2 and an adhesive layer 3. The laminated film may also have a base film on the surface of the adhesive layer 1 opposite to the adhesive layer 3.

[0095] The adhesive layer (film adhesive) can be referred to as appropriate in the above-mentioned description of semiconductor adhesives (film adhesives). In the above-mentioned description of semiconductor adhesives (film adhesives), the term "semiconductor adhesive" can be replaced with "adhesive layer".

[0096] (Backgrind Tape) The backgrind tape may include one or more adhesive layers and one or more base material layers, or it may consist of one adhesive layer and one base material layer. The laminated film of this embodiment can serve both as a backgrind and for connecting circuit components. In this case, the adhesive layer is attached to the main surface of the semiconductor wafer on the side where the electrodes are provided.

[0097] The adhesive layer preferably has adhesive properties at room temperature and possesses the necessary adhesion to the adherend. It is also preferable that it hardens (resulting in reduced adhesive strength) when exposed to high-energy radiation or heat, but it is even more preferable that it can be easily peeled off the adhesive layer without the application of high-energy radiation or heat. Furthermore, the adhesive layer may be a pressure-sensitive adhesive layer. The adhesive layer can be formed using, for example, acrylic resin, various synthetic rubbers, natural rubber, or polyimide resin.

[0098] The thickness of the adhesive layer may be 5 to 100 μm, or 10 to 80 μm.

[0099] Examples of suitable base layers include plastic films such as polyester film, polytetrafluoroethylene film, polyethylene film, polypropylene film, and polymethylpentene film. Among these, polyester film is preferred, and polyethylene terephthalate film is more preferred. The base layer may also be a mixture of two or more materials selected from the above, or a multilayered structure of the above films.

[0100] The thickness of the substrate layer may be 10 to 100 μm, or 20 to 80 μm.

[0101] The thickness of the backgrind tape may be 10 to 200 μm, or 20 to 150 μm.

[0102] <Method for Preparing Semiconductor Adhesives> Film-like or thin-film semiconductor adhesives can be obtained by the following method. First, the above-mentioned curable resin component, flux, inorganic filler, and other components are added to an organic solvent and then dissolved or dispersed by stirring, mixing, kneading, etc., to prepare a resin varnish. Then, the resin varnish is applied to a mold-release treated substrate film using a knife coater, roll coater, applicator, die coater, comma coater, etc., and the organic solvent is reduced by heating to form a semiconductor adhesive on the substrate film. Alternatively, before reducing the organic solvent by heating, the resin varnish may be spin-coated onto a wafer or the like to form a film, and then the semiconductor adhesive may be formed on the wafer by solvent drying.

[0103] The base film is not particularly limited as long as it has heat resistance that can withstand the heating conditions when volatilizing organic solvents, and examples include polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethernaphthalate film, and 4-methyl-1-pentene film. The base film is not limited to a single layer made of one of these films, but may be a multilayer film made of two or more films.

[0104] Specifically, the conditions for volatilizing the organic solvent from the resin varnish after application may include heating at 50 to 200°C for 0.1 to 90 minutes. Conditions that allow the organic solvent to volatilize to 1.5% by mass or less are acceptable, as long as they do not affect voids, viscosity adjustment, etc., after mounting.

[0105] <Semiconductor Device> A semiconductor device manufactured using the semiconductor adhesive according to this embodiment will be described. The semiconductor device according to this embodiment comprises a connection structure in which the connection parts of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection parts of a plurality of semiconductor chips are electrically connected to each other, and a sealing material that seals at least a part of the connection parts, the sealing material including a cured product of the semiconductor adhesive according to this embodiment. The connection parts in the semiconductor device may be either metal bonding between bumps and wiring, or metal bonding between bumps. In the semiconductor device according to this embodiment, for example, a flip-chip connection can be used to obtain an electrical connection via the semiconductor adhesive.

[0106] Figure 2 is a schematic cross-sectional view showing an embodiment of a semiconductor device (a COB-type connection configuration of a semiconductor chip and a substrate). As shown in Figure 2(a), the semiconductor device 100 includes a semiconductor chip 10 and a substrate (circuit wiring board) 20 facing each other, wiring 15 arranged on the opposing surfaces of the semiconductor chip 10 and the substrate 20, connecting bumps 30 that connect the wiring 15 of the semiconductor chip 10 and the substrate 20 to each other, and a sealing material 40 that fills the gap between the semiconductor chip 10 and the substrate 20 without any gaps. The semiconductor chip 10 and the substrate 20 are flip-chip connected by the wiring 15 and the connecting bumps 30. The wiring 15 and the connecting bumps 30 are sealed by the sealing material 40 and isolated from the external environment. The sealing material 40 includes a cured product of a semiconductor adhesive according to this embodiment.

[0107] As shown in Figure 2(b), the semiconductor device 200 includes a semiconductor chip 10 and a substrate 20 facing each other, bumps 32 arranged on the opposing surfaces of the semiconductor chip 10 and the substrate 20, and a sealing material 40 that fills the gap between the semiconductor chip 10 and the substrate 20 without any gaps. The semiconductor chip 10 and the substrate 20 are connected via a flip-chip connection by the opposing bumps 32 being connected to each other. The bumps 32 are sealed by the sealing material 40 and isolated from the external environment.

[0108] Figure 3 is a schematic cross-sectional view showing another embodiment of a semiconductor device (a COC-type connection configuration between semiconductor chips). As shown in Figure 3(a), the semiconductor device 300 is the same as the semiconductor device 100 except that the two semiconductor chips 10 are flip-chip connected by wiring 15 and connecting bumps 30. As shown in Figure 3(b), the semiconductor device 400 is the same as the semiconductor device 200 except that the two semiconductor chips 10 are flip-chip connected by bumps 32.

[0109] There are no particular restrictions on the semiconductor chip 10; various semiconductors can be used, such as elemental semiconductors composed of the same type of element, such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide.

[0110] The substrate 20 is not particularly limited as long as it is a wiring circuit board. Examples include a circuit board in which wiring (wiring patterns) are formed by etching away unnecessary parts of a metal layer formed on the surface of an insulating substrate mainly composed of glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimidotriazine, polyimide, etc., a circuit board in which wiring (wiring patterns) are formed on the surface of the insulating substrate by metal plating, etc., and a circuit board in which wiring (wiring patterns) are formed by printing a conductive material on the surface of the insulating substrate.

[0111] The connection parts such as the wiring 15 and bumps 32 contain gold, silver, copper, solder (main components of which may be, for example, tin-silver, tin-lead, tin-bismuth, or tin-copper), nickel, tin, lead, etc., and may contain multiple metals.

[0112] A metal layer may be formed on the surface of the wiring (wiring pattern), mainly composed of gold, silver, copper, solder (primarily tin-silver, tin-lead, tin-bismuth, tin-copper, etc.), tin, nickel, etc. This metal layer may consist of only a single component or multiple components. It may also have a structure in which multiple metal layers are stacked. The material constituting the metal layer may be copper or solder because it is inexpensive and commonly used, but flux activity is required because it contains oxides, impurities, etc.

[0113] The material used for the conductive protrusions called bumps primarily consists of gold, silver, copper, solder (main components being, for example, tin-silver, tin-lead, tin-bismuth, or tin-copper), tin, nickel, etc. It may consist of a single component or multiple components. Furthermore, these metals may be formed in a layered structure. The bumps may be formed on a semiconductor chip or substrate. Because they are inexpensive and commonly used, the metal layer may be copper or solder; however, due to the presence of oxides and impurities, flux activity is required.

[0114] Alternatively, semiconductor devices (packages) as shown in Figure 2 or Figure 3 may be stacked and electrically connected with gold, silver, copper, solder (main components being, for example, tin-silver, tin-lead, tin-bismuth, tin-copper), tin, nickel, etc. Copper and solder may be used for the metal layer because they are inexpensive and commonly used, but flux activity is required due to the presence of oxides and impurities. For example, a semiconductor adhesive, as seen in TSV technology, may be interposed between semiconductor chips for flip-chip connection or stacking, forming holes that penetrate the semiconductor chips and connecting them to electrodes on the pattern surface.

[0115] Figure 4 is a schematic cross-sectional view showing another embodiment of a semiconductor device (a semiconductor chip stacked type (TSV)). In the semiconductor device 500 shown in Figure 5, the semiconductor chip 10 and the interposer 50 are connected via a flip-chip connection by connecting the wiring 15 formed on the interposer 50 to the wiring 15 of the semiconductor chip 10 via connecting bumps 30. The gap between the semiconductor chip 10 and the interposer 50 is filled without any gaps with a sealing material 40. On the surface of the semiconductor chip 10 opposite to the interposer 50, semiconductor chips 10 are repeatedly stacked via the wiring 15, connecting bumps 30, and sealing material 40. The wiring 15 on the pattern surfaces on the front and back of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10. Copper, aluminum, and the like can be used as the material for the through electrodes 34.

[0116] This TSV technology allows signals to be acquired from the back surface of semiconductor chips, which are not normally used. Furthermore, because the through-electrode 34 is passed vertically through the semiconductor chip 10, the distance between opposing semiconductor chips 10, or between the semiconductor chip 10 and the interposer 50, can be shortened, enabling flexible connections. The semiconductor adhesive according to this embodiment can be applied as a sealing material between opposing semiconductor chips 10, or between the semiconductor chip 10 and the interposer 50, in such TSV technology.

[0117] Furthermore, with highly flexible bump formation methods such as area bump chip technology, semiconductor chips can be directly mounted to the motherboard without the need for an interposer. The semiconductor adhesive according to this embodiment can also be applied when directly mounting such semiconductor chips to a motherboard. In addition, the semiconductor adhesive according to this embodiment can also be applied when sealing the gap between two wiring circuit boards when stacking them.

[0118] <Method for Manufacturing a Semiconductor Device> The method for manufacturing a semiconductor device according to this embodiment is a method for manufacturing a semiconductor device comprising a connection structure in which the connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection portions of a plurality of semiconductor chips are electrically connected to each other, and further comprising a step of sealing at least a part of the connection portion using a semiconductor adhesive according to this embodiment.

[0119] The above steps can be carried out by connecting a semiconductor chip and a wiring circuit board, or a plurality of semiconductor chips to each other, using a semiconductor adhesive according to this embodiment. In this case, the method for manufacturing a semiconductor device according to this embodiment may include, for example, the steps of connecting a semiconductor chip and a wiring circuit board to each other via a semiconductor adhesive and electrically connecting the respective connection parts of the semiconductor chip and the wiring circuit board to each other, and / or connecting a plurality of semiconductor chips to each other via a semiconductor adhesive and electrically connecting the respective connection parts of the plurality of semiconductor chips to each other.

[0120] Furthermore, the above process may include the steps of pressing together an alignment-marked semiconductor chip, which has alignment marks on its main surface and on which semiconductor adhesive is provided, with another semiconductor chip via semiconductor adhesive, and / or pressing together an alignment-marked semiconductor chip, which has alignment marks on its main surface and on which semiconductor adhesive is provided, with a wiring circuit board via semiconductor adhesive. Since the semiconductor adhesive in this embodiment has sufficient visibility, even if the semiconductor adhesive is provided so as to cover the alignment marks, it can be aligned with sufficient accuracy.

[0121] The above-mentioned semiconductor chip with alignment marks can be obtained by framing a semiconductor adhesive-coated wafer, which comprises a wafer having alignment marks on its main surface and the semiconductor adhesive provided on the main surface.

[0122] In the semiconductor device manufacturing method according to this embodiment, the connection parts can be connected to each other by metal bonding. That is, the connection parts of the semiconductor chip and the wiring circuit board can be connected to each other by metal bonding, or the connection parts of the plurality of semiconductor chips can be connected to each other by metal bonding.

[0123] As an example of a semiconductor device manufacturing method according to this embodiment, a manufacturing method for the semiconductor device 500 shown in Figure 4 will be described. In the semiconductor device 500, the semiconductor chip 10 and the interposer 50 are connected via a flip-chip connection, where wiring (copper wiring) 15 formed on the interposer 50 is connected to wiring (copper pillars, copper posts) 15 on the semiconductor chip 10 via connecting bumps (solder bumps) 30. The gap between the semiconductor chip 10 and the interposer 50 is filled without any gaps with a sealing material 40. On the surface of the semiconductor chip 10 opposite to the interposer 50, semiconductor chips 10 are repeatedly stacked via wiring 15, connecting bumps 30 and sealing material 40. The wiring 15 on the pattern surfaces on the front and back of the semiconductor chip 10 are connected to each other by through electrodes 34 filled in holes that penetrate the inside of the semiconductor chip 10.

[0124] Figure 5 is a diagram illustrating an example of a semiconductor device manufacturing method shown in Figure 4. Figure 5(a) shows a step of pressing a laminated chip, on which a semiconductor adhesive is provided on the main surface of a semiconductor chip, with another semiconductor chip via the semiconductor adhesive. The laminated chip (semiconductor chips to be stacked) 700 comprises a semiconductor chip 10 and a semiconductor adhesive 42 provided on the main surface of the semiconductor chip 10. The semiconductor chip 10 is provided with through-electrodes 34 filled in holes penetrating the interior of the semiconductor chip 10, wiring 15 arranged on one surface of the semiconductor chip 10, and connection bumps 30 arranged on the wiring 15. The semiconductor adhesive 42 is provided to embed the wiring 15 and the connection bumps 30, but may cover at least a portion of the surface of the semiconductor chip 10, the wiring 15, and the connection bumps 30. The semiconductor adhesive 42 may cover alignment marks (not shown) provided on the surface of the semiconductor chip 10, as it has sufficient visibility.

[0125] The stacked chip 700 can be manufactured by applying a semiconductor adhesive 42 to a semiconductor wafer having wiring 15 and connecting bumps 30, or by attaching the semiconductor adhesive 42 in film form, and then dicing to separate the semiconductor chip 10 into individual pieces. The film-like semiconductor adhesive can be attached by heat pressing, roll lamination, vacuum lamination, etc.

[0126] The crimping of the multilayer chip 700 with another semiconductor chip can be performed, for example, by aligning the connection bumps 30 of the multilayer chip 700 so as to electrically connect with through-electrodes 34 filled in holes penetrating the interior of the other semiconductor chip 10, and then using a crimping tool 90 while heating the multilayer chip 700 and the semiconductor chip 10 at a temperature above the melting point of the connection bumps 30. If solder is used at the connection point, the temperature applied to the soldered portion may be 240°C or higher. This connects the multilayer chip 700 and the semiconductor chip 10, and seals the connection point with a cured semiconductor adhesive.

[0127] The connection load depends on the number of bumps, but can be set considering factors such as absorbing variations in bump height and controlling bump deformation. The connection time may be short from the viewpoint of improving productivity. The connection time may be the time required to melt the solder, remove oxide film and surface impurities, and form a metal bond at the connection point. A short connection time (crimping time) means that the time during which the connection point is subjected to a temperature of 240°C or higher (for example, the time when solder is used) is 10 seconds or less. The connection time may be 5 seconds or less or 3 seconds or less. The same method can be applied to the connection of an interposer 50 having wiring 15 and a multilayer chip 700.

[0128] By repeating the above steps, the semiconductor device 500 shown in Figure 5(b) can be manufactured. Alternatively, the semiconductor device 500 may be manufactured by repeatedly aligning and stacking (temporarily fixing) the stacked chip 700 and the semiconductor chip 10 to obtain a multi-layer stacked structure with temporary fixing, and then heating it in a reflow oven to melt the solder bumps and connect the semiconductor chips together. Since temporary fixing does not significantly require the formation of metal joints, it can be done with lower load, in a shorter time, and at a lower temperature compared to the main crimping described above, resulting in advantages such as improved productivity and prevention of deterioration of the connection part. After connecting the semiconductor chip and the substrate, the semiconductor adhesive may be cured by heating it in an oven or the like. The heating temperature may be the temperature at which the semiconductor encapsulation adhesive hardens, or it may be the temperature at which it hardens completely. The heating temperature and heating time may be set as appropriate.

[0129] As another example of a semiconductor device manufacturing method according to this embodiment, a method for manufacturing the semiconductor device 600 shown in Figure 6 will be described. The semiconductor device 600 consists of a substrate (glass epoxy substrate) 60 having wiring (copper wiring) 15 and a semiconductor chip 10 having wiring (copper pillars, copper posts) 15, which are connected to each other via a sealing material 40. The wiring 15 of the semiconductor chip 10 and the wiring 15 of the substrate 60 are electrically connected by connection bumps (solder bumps) 30. Solder resist 70 is placed on the surface of the substrate 60 where the wiring 15 is formed, except for the positions where the connection bumps 30 are formed.

[0130] Figure 7 shows an example of a method for manufacturing a semiconductor device 600. Figures 7(a) and 7(b) show the step of pressing a laminated chip, on which a semiconductor adhesive is provided on the main surface of the semiconductor chip, and a wiring circuit board together via the semiconductor adhesive. The laminated chip (semiconductor chips to be stacked) 800 comprises a semiconductor chip 10 and a semiconductor adhesive 42 provided on the main surface of the semiconductor chip 10. The semiconductor chip 10 is provided with wiring 15 arranged on one surface of the semiconductor chip 10, connection bumps 30 arranged on the wiring 15, and alignment marks 80 provided on the same surface as the surface on which the wiring 15 is arranged. The semiconductor adhesive 42 is provided to embed the wiring 15 and the connection bumps 30, but it may also cover at least a portion of the surface of the semiconductor chip 10, the wiring 15, and the connection bumps 30.

[0131] The semiconductor chip 10 may have through-electrodes. The stacked chip 800 can be manufactured in the same manner as the stacked chip 700.

[0132] Since the alignment marks 80 covered with semiconductor adhesive 42 are easily recognizable, as shown in Figure 7(a), the position of the stacked chip 800 can be corrected and aligned by capturing the alignment marks 80 with the imaging device 85 and inputting the resulting positional information into the image processing system.

[0133] The crimping of the multilayer chip 800 to the wiring circuit board can be performed, for example, as shown in Figure 7(b), by aligning the connection bumps 30 of the multilayer chip 800 so as to electrically connect to the wiring 15 on the substrate 60 that are not covered by the solder resist 70, and using a crimping tool 90 while heating the multilayer chip 800 and the wiring 15 on the substrate 60 at a temperature above the melting point of the connection bumps 30. If solder is used at the connection point, the temperature applied to the solder portion may be 240°C or higher. This connects the multilayer chip 800 to the substrate 60 and seals the connection point with a cured semiconductor adhesive.

[0134] The connection load depends on the number of bumps, but can be set considering factors such as absorbing variations in bump height and controlling bump deformation. The connection time may be short from the viewpoint of improving productivity. The connection time may be the time required to melt the solder, remove oxide film and surface impurities, and form a metal joint at the connection point. A short connection time (crimping time) means that the time during which the connection point is subjected to a temperature of 240°C or higher (for example, the time when solder is used) is 10 seconds or less. The connection time may be 5 seconds or less or 3 seconds or less.

[0135] The semiconductor device 600 may be manufactured by applying a semiconductor adhesive 42 to a substrate 60 on which a solder resist 70 is formed, or by attaching the semiconductor adhesive 42 in film form, and then connecting it to a semiconductor chip 10. The semiconductor device 600 may also be manufactured by heat treatment in a reflow oven, similar to the semiconductor device 500.

[0136] The present disclosure will be described below using examples, but will not be limited thereto.

[0137] <Preparation of semiconductor adhesives> The compounds used in the preparation of semiconductor adhesives are shown below.

[0138] (Curing resin components) ((a) Thermosetting resins) ・Epoxy resin A (manufactured by Mitsubishi Chemical Corporation, product name: EP1032H60, polyfunctional solid epoxy resin containing triphenolmethane skeleton) ・Epoxy resin B (manufactured by Mitsubishi Chemical Corporation, product name: YL983U, bisphenol F type liquid epoxy resin) ・Epoxy resin C (manufactured by Mitsubishi Chemical Corporation, product name: YX7110B80, flexible epoxy resin)

[0139] (b) Curing agent: Imidazole-based curing agent (manufactured by Shikoku Chemicals Holdings Co., Ltd., product name: 2MAOK-PW, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanurate adduct)

[0140] (c) Thermoplastic resins - Phenoxy resin (manufactured by Nippon Steel Chemical & Material Co., Ltd., product name: ZX-1356-2, Tg: 71℃, Mw: approx. 63000)

[0141] (Inorganic fillers) - Boron nitride particles (manufactured by Resonaq Corporation, product name: UHP-S2, average particle size: 0.7 μm) - Silica particles (manufactured by Admatex Corporation, product name: KE180G-HLA, methacrylic surface-treated silica particles, average particle size: 0.18 μm) - Alumina particles (manufactured by Admatex Corporation, product name: A2-SE-C5, epoxy surface-treated alumina particles, average particle size: 0.2 μm)

[0142] (Organic filler) - Acrylic rubber particles (manufactured by DOW, product name: EXL2655)

[0143] (Flux agent) Glutaric acid (manufactured by Wako Pure Chemical Industries, Ltd., Wako Special Grade, melting point: approximately 98°C)

[0144] (Example 1) 45 parts by mass of epoxy resin A, 15 parts by mass of epoxy resin B, and 5 parts by mass of epoxy resin C were added to an organic solvent (cyclohexanone) so that the NV (solids content concentration) was 44% by mass. 45 parts by mass of epoxy resin A, 15 parts by mass of epoxy resin B, and 5 parts by mass of epoxy resin C were added as thermosetting resins, 2 parts by mass of imidazole-based curing agent as a curing agent, 30 parts by mass of phenoxy resin as a thermoplastic resin, a predetermined amount of boron nitride particles and silica particles, 10 parts by mass of acrylic rubber particles as an organic filler, and 4 parts by mass of glutaric acid as a flux. The inorganic filler was blended to the mass percentage shown in Table 1 (based on the total solids content of the semiconductor adhesive). Then, the same mass as the solids was added to Φ1.0 mm beads, and the mixture was stirred for 30 minutes using a bead mill (RETSCH Corporation, planetary type fine grinder PM-400). The beads used for stirring were removed by filtration. The prepared varnish was applied using a small precision coating device (manufactured by Ren'i Seiki Co., Ltd.), and dried in a multi-safety type MSO dryer (manufactured by Futaba Kagaku Co., Ltd.) at 100°C for 10 minutes to obtain a 16 μm thick film-like adhesive (adhesive for semiconductors).

[0145] (Examples 2-10, Comparative Examples 1-4) Film-like adhesives (adhesives for semiconductors) were obtained in the same manner as in Example 1, except that the inorganic filler was changed to the composition shown in Table 1.

[0146] <Evaluation> (1) Thermal conductivity measurement Using the film-like adhesive obtained in the examples and comparative examples, the film-like adhesive was laminated multiple times using a desktop laminator (manufactured by Lamy Corporation, product name: Hotdog Leon 13DX) until it reached a thickness of 400 μm, and a sample for viscosity measurement was prepared. The lamination conditions were a device setting temperature of 60°C and a device transport speed level of 3. The laminated film-like adhesive was cut into 1 cm x 1 cm pieces, and cured in an automatic heating and pressurizing device (manufactured by Chiyoda Electric Co., Ltd.) at 200°C for 1 hour to obtain a cured product. Both sides of the obtained cured product were blackened with graphite spray, and the thermal diffusivity in the thickness direction was measured. The thermal diffusivity was measured using the laser flash method (Xe-flash method) (manufactured by NETZSCH, LFA467 Hyper Flash). Pulsed light irradiation was performed under conditions of a pulse width of 40 μs and an applied voltage of 180 V. Measurements were taken at an ambient temperature of 35°C ± 1°C. Next, the value of thermal conductivity was obtained by multiplying the specific heat and density by the thermal diffusivity using the following equation (I): λ = α × Cp × ρ ...Equation (I) [wherein in equation (I), λ is the thermal conductivity (W / mK) and α is the thermal diffusivity (m ２ / s), Cp is specific heat (J / kg·K), ρ is density (g / cm³). ３ The values ​​shown are as follows. The specific heat (J / kg·K) was measured using differential scanning calorimetry (DSC) according to the following procedure. A semiconductor adhesive was weighed into an aluminum pan, and measured using a differential scanning calorimeter (Rigaku Corporation, Thermo plus EVO2 DSC8231) at 10°C / min from room temperature (25°C) to 75°C. Sapphire was used as a reference. The specific heat of the sample was calculated using the known specific heat of sapphire. Density (g / cm³) ３ The specific gravity was measured at a water temperature of 25°C using an electronic hydrometer (Alpha Mirage Co., Ltd., EW-300SG).

[0147] (2) Measurement of light transmittance A sheet (film-like adhesive sheet) was obtained in which a film-like adhesive with a thickness of 4 μm was formed on a PET separator film using the same method as described above (method for preparing film-like adhesive). The obtained film-like adhesive sheet and the PET separator film alone were each cut to a size of 10 mm x 30 mm. The film-like adhesive sheet was placed in the sample mounting section and the separator film alone in the reference mounting section of a spectrophotometer (manufactured by JASCO Corporation, product name: V-770), and the light transmittance (%T) was measured in the wavelength range of 200 to 900 nm at a scan speed of 400 nm / min. The light transmittance at a wavelength of 550 nm was used as the measured value.

[0148] (3) Viscosity Measurement A viscosity measurement sample laminated to 400 μm using the same method as described above (thermal conductivity measurement method) was punched out using a 10 mm square punch, and the melt viscosity at 130°C (130°C viscosity) was measured using a rotary rheometer (TA Instruments, product name: ARES-G2). [Measurement conditions] Measurement tool size: 9 mmφ Sample thickness: 400 μm Heating rate: 10°C / min Frequency: 10 Hz Temperature range: 30 to 150°C

[0149]

[0150] 1...Adhesive layer, 2...Substrate layer, 3...Adhesive layer, 4...Backgrind tape, 5...Laminated film, 10...Semiconductor chip, 15...Wiring, 20, 60...Substrate, 30...Connecting bump, 32...Bump, 34...Through-hole electrode, 40...Sealing material, 42...Semiconductor adhesive, 50...Interposer, 70...Solder resist, 80...Alignment mark, 85...Imaging device, 90...Crimping tool, 100, 200, 300, 400, 500, 600...Electronic equipment.

Claims

1. A semiconductor adhesive comprising a curable resin component and an inorganic filler, wherein the inorganic filler comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45% by mass or less based on the total amount of the semiconductor adhesive, and the average particle diameter of the boron nitride particles is 2 μm or less.

2. The semiconductor adhesive according to claim 1, wherein the inorganic filler comprises the boron nitride particles and the silica particles.

3. The semiconductor adhesive according to claim 1, wherein the inorganic filler comprises the boron nitride particles and the alumina particles.

4. The semiconductor adhesive according to any one of claims 1 to 3, wherein the content of the inorganic filler is 15 to 80% by mass based on the total amount of the semiconductor adhesive.

5. The semiconductor adhesive according to any one of claims 1 to 3, wherein the content of the inorganic filler is 70% by mass or less based on the total amount of the semiconductor adhesive.

6. The semiconductor adhesive according to any one of claims 1 to 3, wherein the proportion of boron nitride particles in the inorganic filler is 30% by mass or more, based on the total amount of the inorganic filler.

7. A semiconductor adhesive according to any one of claims 1 to 3, wherein the viscosity at 130°C is 45,000 Pa·s or less.

8. A semiconductor adhesive according to any one of claims 1 to 3, wherein the light transmittance is 0.4% or more.

9. A semiconductor adhesive according to any one of claims 1 to 3, wherein the thermal conductivity after curing is 0.5 W / mK or higher.

10. The semiconductor adhesive according to any one of claims 1 to 3, further comprising a fluxing agent.

11. The semiconductor adhesive according to claim 10, wherein the fluxing agent is a carboxylic acid.

12. The semiconductor adhesive according to any one of claims 1 to 3, wherein the curable resin component comprises a thermosetting resin, a curing agent, and a thermoplastic resin.

13. A laminated film comprising, in this order, an adhesive layer containing a curable resin component and an inorganic filler, an adhesive layer, and a base layer, wherein the inorganic filler comprises boron nitride particles and at least one selected from the group consisting of silica particles, alumina particles, aluminum nitride particles, and silicon carbide particles, the content of the boron nitride particles is 45% by mass or less based on the total amount of the adhesive layer, and the average particle diameter of the boron nitride particles is 2 μm or less.

14. A method for manufacturing a semiconductor device comprising a connection structure in which the connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection portions of a plurality of semiconductor chips are electrically connected to each other, the method comprising the step of sealing at least a part of the connection portion using a semiconductor adhesive as described in any one of claims 1 to 3.

15. The method for manufacturing a semiconductor device according to claim 14, wherein the step includes pressing together an alignment-marked semiconductor chip having alignment marks on its main surface and the semiconductor adhesive provided on the main surface with another semiconductor chip via the semiconductor adhesive, and / or pressing together an alignment-marked semiconductor chip having alignment marks on its main surface and the semiconductor adhesive provided on the main surface with a wiring circuit board via the semiconductor adhesive.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the semiconductor chip with alignment marks is obtained by framing a semiconductor adhesive-coated wafer, which comprises a wafer having alignment marks on its main surface and the semiconductor adhesive provided on the main surface.

17. A semiconductor device comprising: a connection structure in which the connection portions of a semiconductor chip and a wiring circuit board are electrically connected to each other, and / or a connection structure in which the connection portions of a plurality of semiconductor chips are electrically connected to each other; and a sealing material that seals at least a part of the connection portion, wherein the sealing material includes a cured product of a semiconductor adhesive according to any one of claims 1 to 3.

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