Mask, measurement method, and exposure method

Abstract

Provided is a mask to be used when performing overlay exposure on at least a partial region of a substrate comprising a resist layer, said mask comprising a mark to be transferred to the resist layer, wherein the mark has a first pattern that extends in a first direction and has a width, in a second direction intersecting the first direction, that changes to include a width W1 and a width W2, the width W1 is the width where a resist image is formed in the resist layer by first exposure light and second exposure light on the resist layer when there is second-direction misalignment, on the resist layer, between the position of a first region irradiated by the first exposure light patterned by the mark and the position of a second region irradiated by the second exposure light patterned by the mark so as to be overlaid onto the first region, and the width W2 is the width where the resist image is not formed by the first exposure light and second exposure light on the resist layer when there is second-direction misalignment between the position of the first region and the position of the second region.

Description

Mask, Measuring Method, and Exposure Method

[0001] It relates to a mask, a measuring method, and an exposure method.

[0002] In recent years, liquid crystal display panels have been widely used as display elements for personal computers, televisions, and the like. A liquid crystal display panel is manufactured by forming a circuit pattern of thin film transistors on a plate (glass substrate) by a photolithography technique. As an apparatus for this photolithography process, an exposure apparatus that projects and exposes an original pattern formed on a mask onto a photoresist layer on a plate through a projection optical system is used (for example, Patent Document 1).

[0003] It is desired to manage the exposure results with high precision.

[0004] Japanese Patent Application Laid-Open No. 20200-042100

[0005] According to a first disclosed aspect, a mask is a mask used when performing overlay exposure on at least a part of a region of a substrate provided with a resist layer, and includes a mark transferred to the resist layer. The mark has a first pattern that extends in a first direction and whose width in a second direction intersecting the first direction changes including widths W1 and W2. The width W1 is the width at which a resist image formed by the first exposure light and the second exposure light is formed on the resist layer when there is a deviation in the second direction between the position of a first irradiation region irradiated with the first exposure light patterned by the mark and the position of a second irradiation region irradiated with the second exposure light patterned by the mark so as to overlap the first irradiation region. The width W2 is the width at which no resist image formed by the first exposure light and the second exposure light is formed on the resist layer when there is a deviation in the second direction between the position of the first irradiation region and the position of the second irradiation region.

[0006] According to a second aspect of the disclosure, the mask is a mask having marks for measuring the displacement between the position of a first exposure region exposed by a first exposure light on a substrate having a resist layer and the position of a second exposure region which overlaps with a part of the first exposure region and is exposed by a second exposure light, wherein the marks have a first pattern which extends in a first direction and whose width in a second direction intersecting the first direction varies including widths W1 and W2, and the width W1 is the pattern of the first exposure on the resist layer as indicated by the marks The width W2 is the width over which a resist image is formed on the resist layer by the first exposure light and the second exposure light when there is a second directional displacement between the position of the first irradiation region where light is irradiated and the position of the second irradiation region where the second exposure light, patterned by the mark so as to overlap the first irradiation region, is irradiated. The width W2 is the width over which a resist image is not formed on the resist layer by the first exposure light and the second exposure light when there is a second directional displacement between the position of the first irradiation region and the position of the second irradiation region.

[0007] According to a third aspect of the disclosure, the measurement method is a method for measuring the displacement between the position of a first exposure region exposed by a first exposure light on a substrate having a resist layer, and the position of a second exposure region having an adjacent region that overlaps with a part of the first exposure region and is exposed by a second exposure light, using the mask described above, and comprising: irradiating the resist layer with the first exposure light patterned by the marks; irradiating the first exposure region that has been irradiated with the first exposure light with the second exposure light patterned by the marks, superimposed on the first irradiation region that has been irradiated with the first exposure light; measuring the length in the first direction of the resist image of the first pattern formed by the first exposure light and the second exposure light; and determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the resist image of the first pattern.

[0008] According to a fourth aspect of the disclosure, the exposure method includes irradiating a resist layer with a first exposure light through the mask, irradiating a resist layer with a second exposure light through the mask, measuring the length in the first direction of the resist image of the first pattern formed by the first exposure light and the second exposure light, and adjusting the position of at least one of the first exposure region exposed by the first exposure light or the second exposure region exposed by the second exposure light based on the results of the measurement.

[0009] According to the fifth aspect of the disclosure, the exposure method includes irradiating a resist layer with first exposure light from a first spatial light modulator including a plurality of optical modulation elements controlled based on drawing data including a pattern of marks, and irradiating the resist layer with second exposure light from a second spatial light modulator including a plurality of optical modulation elements controlled based on drawing data including a pattern of marks, superimposed on a first irradiation area irradiated with the first exposure light, wherein the marks extend in a first direction on the resist layer and have a width in a second direction intersecting the first direction. The present invention has a first pattern that varies including W1 and width W2, wherein width W1 is the width over which a resist image is formed on the resist layer due to irradiation with the first exposure light and irradiation with the second exposure light when there is a second directional displacement between the position of the first irradiation region and the position of the second irradiation region to which the second exposure light is irradiated, and width W2 is the width over which a resist image is not formed on the resist layer due to irradiation with the first exposure light and irradiation with the second exposure light when there is a second directional displacement between the position of the first irradiation region and the position of the second irradiation region.

[0010] Furthermore, the configuration of the embodiments described later may be modified as appropriate, and at least a part of it may be replaced with other components. Moreover, the configuration elements whose arrangement is not particularly limited may be arranged in positions that can achieve their function, not limited to the arrangement disclosed in the embodiments.

[0011] Figure 1 is a schematic diagram showing the configuration of an exposure apparatus according to an embodiment. Figure 2 is a schematic perspective view showing the arrangement of a plurality of illumination optical systems and a plurality of projection optical units. Figure 3(A) shows the exposure fields of each of the plurality of projection optical units on a substrate, and Figure 3(B) shows the exposure region formed on the substrate when the substrate is scanned in the X direction by the substrate stage and exposed with the exposure field shown in Figure 3(A). Figure 4(A) shows an example of a pattern transferred to the overlap region, Figure 4(B) shows the case where the position of the region irradiated by the patterned exposure light via the first row of projection optical units coincides with the position of the region irradiated by the patterned exposure light via the second row of projection optical units, Figure 4(C) shows the resist image formed in the case of Figure 4(B), Figure 4(D) shows the case where the position of the region irradiated by the patterned exposure light via the first row of projection optical units coincides with the position of the region irradiated by the patterned exposure light via the second row of projection optical units, and Figure 4(E) shows the resist image formed in the case of Figure 4(D). Figure 5 shows an example of a mask according to the first embodiment. Figure 6 is a magnified view of the area near where measurement marks are formed on the mask. Figure 7(A) shows an example of measurement marks, and Figures 7(B) and 7(C) show patterns included in the measurement marks shown in Figure 7(A).Figure 8(A) shows the case where the position of the region irradiated by the patterned exposure light via the first row of projection optical units coincides with the position of the region irradiated by the patterned exposure light via the second row of projection optical units so as to overlap with the region irradiated by the patterned exposure light via the first row of projection optical units; Figure 8(B) shows the resist image formed in the case of Figure 8(A); Figure 8(C) shows the case where the position of the region irradiated by the patterned exposure light via the first row of projection optical units coincides with the position of the region irradiated by the patterned exposure light via the second row of projection optical units so as to overlap with the region irradiated by the patterned exposure light via the first row of projection optical units, and Figure 8(D) shows the resist image formed in the case of Figure 8(C). Figure 9(A) shows a pattern relating to the comparative example; Figure 9(B) shows the case where the position of the region irradiated by the exposure light patterned by the comparative example through the first row of projection optical units and the position of the region irradiated by the exposure light patterned by the comparative example through the second row of projection optical units are shifted by D [μm] in the Y direction; Figure 9(C) shows the resist image formed in the case of Figure 9(B); and Figure 9(D) shows the relationship between the line width W and the amount of shift D. Figure 10(A) shows a pattern according to the first embodiment, Figure 10(B) shows a case where the position of the region irradiated by the exposure light patterned by the pattern according to the first embodiment via the first row of projection optical units and the position of the region irradiated by the exposure light patterned by the pattern according to the first embodiment via the second row of projection optical units are shifted by D [μm] in the Y direction, Figure 10(C) shows a resist image formed in the case of Figure 10(B), and Figure 10(D) shows the relationship between length L and shift amount D. Figure 11 shows a measurement mark according to Modification 1. Figure 12(A) shows a measurement mark according to Modification 2, Figure 12(B) shows a pattern included in the measurement mark according to Modification 2, and Figure 12(C) shows another example of the pattern included in the measurement mark according to Modification 2.Figure 13(A) shows a measurement mark according to the second embodiment, and Figures 13(B) to 13(E) show patterns included in the measurement mark shown in Figure 13(A). Figure 14 shows the relationship between the positional misalignment between the region irradiated with exposure light via the first row of projection optical units and the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units, and the resist image that is formed. Figure 15 shows a measurement mark according to Modification 1. Figure 16 shows a measurement mark according to the third embodiment. Figure 17 shows the relationship between the positional misalignment between the region irradiated with exposure light via the first row of projection optical units and the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units, and the resist image that is formed. Figure 18(A) shows another example of measurement marks used when measuring the direction and amount of misalignment by elliptic fitting, and Figure 18(B) shows a pattern included in the measurement marks shown in Figure 18(A). Figure 19(A) shows a case where the region irradiated with exposure light via the first row of projection optical units and the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are shifted in the X direction, and Figure 19(B) shows a resist image formed in the case of Figure 19(A). Figures 20(A) and 20(B) show another example of measurement marks used when measuring the direction and amount of misalignment by elliptic fitting of a resist image. Figure 21 shows a schematic configuration of an exposure apparatus according to the fourth embodiment. Figure 22(A) is a diagram for explaining the relationship between the first shot region and the second shot region, and Figure 22(B) shows an example of a mask according to the fourth embodiment. Figure 23 shows a resist image of a measurement mark formed on a substrate in the fourth embodiment. Figure 24 is a perspective view showing an overview of the external configuration of an exposure apparatus according to the fifth embodiment. Figure 25 shows an example of the arrangement of projection areas of DMDs projected onto a substrate by the projection units of each of the multiple exposure modules.Figure 26 is a diagram illustrating the state of sequential exposure by each of the four specific projection regions in Figure 25. Figure 27 is an optical arrangement diagram of the specific configuration of two exposure modules aligned in the X-axis direction (scanning exposure direction) as seen in the XZ plane. Figure 28(A) is a schematic diagram of the DMD, Figure 28(B) is a diagram showing the DMD when the power is OFF, Figure 28(C) is a diagram for explaining the mirror in the ON state, and Figure 28(D) is a diagram for explaining the mirror in the OFF state. Figure 29 is a functional block diagram showing the functional configuration of the exposure control device included in the exposure apparatus according to the fifth embodiment. Figure 30 is a diagram showing a pattern formed on a substrate by controlling the driving of the micromirrors of the DMD based on drawing data generated by the drawing data generation unit.

[0012] 《First Embodiment》 The mask according to the first embodiment and the management of exposure results using the mask according to the first embodiment will be explained with reference to Figures 1 to 10.

[0013] (Configuration of exposure apparatus) Figure 1 is a schematic diagram showing the configuration of an exposure apparatus 10 in which the mask MSK1 according to the first embodiment is used.

[0014] The exposure apparatus 10 is a scanning stepper (scanner) that transfers a pattern formed on the mask MSK1 onto the resist layer of the substrate P by driving the mask MSK1 and the glass substrate P (hereinafter referred to as "substrate") having a resist layer in the same direction and at the same speed relative to the projection optical system PL. The substrate P is, for example, a rectangular glass substrate used in liquid crystal display devices (flat panel displays), with at least one side length or diagonal length of 500 mm or more.

[0015] In the following, the direction in which the mask MSK1 and substrate P are driven during scanning exposure (scanning direction) is defined as the X-axis direction, the direction in the horizontal plane perpendicular to this is defined as the Y-axis direction, the direction perpendicular to the X and Y axes is defined as the Z-axis direction, and the rotation (tilting) directions around the X, Y, and Z axes are defined as θx, θy, and θz directions, respectively.

[0016] The exposure apparatus 10 includes an illumination system IOP, a mask stage MST that holds the mask MSK1, a projection optical system PL, a body 70 that supports these, a substrate stage PST that holds the substrate P, and a control system for these components. The control system provides overall control for each component of the exposure apparatus 10.

[0017] The body 70 comprises a base (vibration isolation table) 71, columns 72A and 72B, an optical table 73, a support 74, and a slide guide 75. The base (vibration isolation table) 71 is placed on the floor F and supports the columns 72A, 72B, etc. by mitigating vibrations from the floor F. Columns 72A and 72B each have a frame shape, with column 72A positioned inside column 72B. The optical table 73 has a flat plate shape and is fixed to the top of column 72A. The support 74 is supported to the top of column 72B via a slide guide 75. The slide guide 75 includes an air ball lifter and a positioning mechanism, and positions the support 74 (i.e., the mask stage MST described later) at an appropriate position in the X-axis direction relative to the optical table 73.

[0018] The illumination system IOP is located above the body 70. The illumination system IOP includes multiple illumination optical systems ILa to ILg (see Figure 2). Each of the illumination optical systems ILa to ILg is equipped with an input lens (not shown), a fly-eye lens FEL, and a condenser lens 84 along the optical axis. The illumination optical systems ILa to ILg irradiate the mask MSK1 with illumination light IL.

[0019] The mask stage MST is supported by a support 74. A mask MSK1 having a patterned surface (lower surface in Figure 1) on which a circuit pattern is formed is fixed to the mask stage MST, for example, by vacuum suction (or electrostatic suction). The mask stage MST is driven by a drive system including a linear motor, for example, in the scanning direction (X-axis direction) with a predetermined stroke, and is also driven minutely in the non-scanning direction (Y-axis direction and θz direction).

[0020] The positional information of the mask stage (MST) in the XY plane (including rotational information in the θz direction) is measured by an interferometer system. The interferometer system measures the position of the mask stage by irradiating a length-measuring beam onto a movable mirror (or a mirrored reflective surface (not shown)) located at the end of the mask stage (MST) and receiving the reflected light from the movable mirror. The measurement results are supplied to a control device (not shown), which drives the mask stage (MST) via a drive system according to the measurement results of the interferometer system.

[0021] The projection optical system PL is supported on the optical base plate 73 below (-Z side) the mask stage MST. The projection optical system PL is configured similarly to the projection optical system disclosed in, for example, U.S. Patent No. 5,729,331, and includes a plurality (e.g., 7) of projection optical units 100a to 100g (multi-lens projection optical units) in which the projection area of ​​the pattern image of the mask MSK1 is arranged, for example, in a staggered pattern. Note that in Figure 1, only four of the seven projection optical units 100a to 100g are shown: 100a, 100c, 100e, and 100g.

[0022] Figure 2 is a schematic perspective view showing the arrangement of multiple illumination optical systems ILa to ILg and multiple projection optical units 100a to 100g. Here, four projection optical units 100a, 100c, 100e, and 100g are arranged at predetermined intervals in the Y-axis direction, while the remaining three projection optical units 100b, 100d, and 100f are spaced apart from the four projection optical units 100a, 100c, 100e, and 100g on the -X side and arranged at predetermined intervals in the Y-axis direction. Each of the multiple projection optical units 100a to 100g is, for example, one that forms an erect image in a bilateral telecentric 1:1 system.

[0023] Each projection optical unit 100a to 100g comprises an image shift unit, an image rotation unit, a magnification adjustment unit, and a focus adjustment unit. The image shift unit has the function of shifting the position of the projected image in the X-axis direction and the position in the Y-axis direction. The image rotation unit has the function of rotating the projected image around the Z-axis. The magnification adjustment unit has the function of enlarging or reducing the projected image. The focus adjustment unit has the function of adjusting the focus state of the projected image. The image shift unit, image rotation unit, magnification adjustment unit, and focus adjustment unit each include one or more optical elements (e.g., lenses, prisms, etc.) that realize their respective functions.

[0024] Figure 3(A) shows the exposure fields (also called projection areas) PIa to PIe of the seven projection optical units 100a to 100g on the substrate P. The exposure fields PIa, PIc, PIe, and PIg of the projection optical units 100a, 100c, 100e, and 100g, which are arranged in order in the -Y direction, are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the -X side and the longer side is on the +X side. On the other hand, the exposure fields PIb, PId, and PIf of the projection optical units 100b, 100d, and 100f, which are arranged in order in the -Y direction, are trapezoids in which the shorter side of the two sides parallel to the Y direction is on the +X side and the longer side is on the -X side.

[0025] The exposure field PIa, located at the +Y end, is shielded from illumination light by a field diaphragm (not shown) so that its +Y end is parallel to the X direction. Similarly, the exposure field PIg, also located at the +Y end, is shielded from illumination light by a field diaphragm so that its -Y end is parallel to the X direction.

[0026] Figure 3(B) shows the exposure regions formed on the substrate P when the substrate P is scanned in the X direction by the substrate stage PST and exposed by the exposure fields PIa to PIg shown in Figure 3(A). On the substrate P, exposure regions (scanning exposure fields) SIa to SIg are formed by scanning exposure, exposed by each exposure field PIa to PIg. In Figure 3(B), the exposure regions SIa, SIc, SIe, and SIg formed by projection optical units 100a, 100c, 100e, and 100g are shown by dashed lines, and the exposure regions SIb, SId, and SIf formed by projection optical units 100b, 100d, and 100f are shown by double-dashed lines.

[0027] These exposure regions SIa to SIg are extensions of the exposure fields PIa to PIg in the X direction due to scanning exposure in the X direction. The Y-direction (non-scanning direction) ends of each exposure region SIa to SIg overlap with the non-scanning direction ends of the adjacent exposure regions SIa to SIg. For example, the exposure region on the -Y side of exposure field PIa overlaps with the exposure region on the +Y side of exposure field PIb. The same applies to other exposure regions, so further explanation is omitted.

[0028] Exposure region SIa includes overlapping region Oa and non-overlapping region Sa that does not overlap with other exposure regions. Exposure region SIb includes overlapping regions Oa and Ob and non-overlapping region Sb that does not overlap with other exposure regions. Exposure region SIc includes overlapping regions Ob and Oc and non-overlapping region Sc that does not overlap with other exposure regions. Exposure region SId includes overlapping regions Oc and Od and non-overlapping region Sd that does not overlap with other exposure regions. Exposure region SIe includes overlapping regions Od and Oe and non-overlapping region Se that does not overlap with other exposure regions. Exposure region SIf includes overlapping regions Oe and Of and non-overlapping region Sf that does not overlap with other exposure regions. Exposure region SIg includes overlapping region Of and non-overlapping region Sg that does not overlap with other exposure regions.

[0029] In overlapping regions Oa to Of, where adjacent exposure regions overlap, the resist layer of the substrate P is first exposed by exposure light patterned by the pattern of the mask MSK1 via the first row of projection optical units 100a, 100c, 100e, and 100g. Next, the resist layer is exposed by exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, and 100f. At this time, the region irradiated with exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, and 100f is superimposed on the region irradiated with exposure light patterned by the pattern of the mask MSK1 via the projection optical units 100a, 100c, 100e, and 100g.

[0030] Here, the resist layer is formed of a positive-type photosensitive material or a negative-type photosensitive material. When a positive-type photosensitive material is used for the resist layer, in the overlap regions Oa to Of, if the sum of the exposure amount of the resist layer by exposure light patterned by the pattern of the mask MSK1 via the first row of projection optical units 100a, 100c, 100e, 100g and the exposure amount of the resist layer by exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, 100f (integrated exposure amount) exceeds a predetermined threshold, the portion of the resist layer where the integrated exposure amount exceeds the threshold is dissolved by the developer, and the unexposed portion remains as a resist image. Furthermore, when a negative-type photosensitive material is used in the resist layer, in the overlap regions Oa to Of, if the sum of the exposure amount of the resist layer by the exposure light patterned by the pattern of the mask MSK1 via the first row of projection optical units 100a, 100c, 100e, 100g and the exposure amount of the resist layer by the exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, 100f (integrated exposure amount) exceeds a predetermined threshold, the portion where the integrated exposure amount exceeds the threshold will not dissolve in the developer and will remain as a resist image. In this embodiment, it is assumed that a positive-type photosensitive material is used in the resist layer.

[0031] Returning to Figure 1, the substrate stage PST is positioned on a base (vibration isolation table) 71 below (-Z side) the projection optical system PL. The substrate P is held on the substrate stage PST via a substrate holder (not shown).

[0032] The positional information of the substrate stage PST in the XY plane (including rotational information (yawing amount (rotation in the θz direction), pitching amount (rotation in the θy direction), rolling amount (rotation in the θx direction))) is measured by an interferometer system. The interferometer system measures the position of the substrate stage PST by irradiating a length-measuring beam from the optical platen 73 onto a movable mirror (or a mirror-finished reflective surface (not shown)) provided at the end of the substrate stage PST, and receiving the reflected light from the movable mirror. The measurement result is supplied to a control system (not shown), and the control system drives the substrate stage PST according to the measurement result of the interferometer system.

[0033] In the exposure apparatus 10, alignment measurement (e.g., EGA) is performed prior to exposure, and the substrate P is exposed using the results in the following procedure. First, the mask stage MST and the substrate stage PST are driven synchronously in the X-axis direction according to the instructions of the control system. This performs scanning exposure on the first shot area on the substrate P. When scanning exposure on the first shot area is completed, the control system moves (steps) the substrate stage PST to the position corresponding to the second shot area. Then, scanning exposure is performed on the second shot area. The control system similarly repeats stepping between shot areas on the substrate P and scanning exposure on the shot areas to transfer the pattern of the mask MSK1 to all shot areas on the substrate P.

[0034] Furthermore, there are two types of patterns formed on a mask: negative patterns and positive patterns. A negative pattern is one in which the desired pattern area on the substrate P transmits light, while the other areas do not transmit light. A positive pattern is one in which the desired pattern area on the substrate P does not transmit light, while the other areas transmit light. In this embodiment, the pattern formed on the mask MSK1 is assumed to be a negative pattern.

[0035] As described above, in this embodiment, in overlapping regions Oa to Of, the resist layer is first exposed by exposure light patterned by the pattern of the mask MSK1 via the first row of projection optical units 100a, 100c, 100e, and 100g, and then exposed by exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, and 100f.

[0036] At this time, if the area irradiated by exposure light patterned by the pattern of the mask MSK1 via the projection optical units 100a, 100c, 100e, and 100g is misaligned with the area irradiated by exposure light patterned by the pattern of the mask MSK1 via the second row of projection optical units 100b, 100d, and 100f, then in the overlap region Oa to Of, the portion where the cumulative exposure amount exceeds a predetermined threshold will be smaller than designed. This point will be explained. As mentioned above, in this embodiment, the resist layer is formed of a positive-type photosensitive material, and a negative-type pattern is formed on the mask MSK1. Therefore, in the overlap region Oa to Of, the portion where the cumulative exposure amount exceeds a predetermined threshold dissolves in the developer.

[0037] Figure 4(A) shows an example of a pattern PTN 101 transferred to the overlap region. As shown in Figure 4(A), the pattern PTN 101 is, for example, a line and space pattern.

[0038] Here, we will explain using the overlap region Oa as an example. Figure 4(B) shows the case in the overlap region Oa where the position of region IRRa, which is irradiated by the exposure light patterned by pattern PTN 101 via the first row of projection optical units 100a, coincides with the position of region IRRb, which is irradiated by the exposure light patterned by pattern PTN 101 via the second row of projection optical units 100b.

[0039] In Figure 4(B), the area shown by cross-hatching is the area where area IRRa and area IRRb overlap and the cumulative exposure amount of the resist layer exceeds a predetermined threshold. As a result, a resist image RI1 corresponding to pattern PTN101 is formed, as shown in Figure 4(C). In this embodiment, the resist layer is formed of a positive-type photosensitive material, and a negative-type pattern is formed on the mask MSK1. Therefore, the resist image RI1 refers to the portion of the resist layer that is dissolved in the developer. When the resist layer is formed of a positive-type photosensitive material and a positive-type pattern is formed on the mask MSK1, the resist image RI1 refers to the portion of the resist layer that remains after development. When the resist layer is formed of a negative-type photosensitive material and a negative-type pattern is formed on the mask MSK1, the resist image RI1 refers to the portion of the resist layer that remains after development. When the resist layer is formed of a negative-type photosensitive material and a positive-type pattern is formed on the mask MSK1, the resist image RI1 refers to the portion of the resist layer that is dissolved in the developer.

[0040] Figure 4(D) shows a case in overlapping region Oa where the position of region IRRa, where exposure light patterned by pattern PTN 101 is irradiated via the first row of projection optical units 100a, and the position of region IRRb, where exposure light patterned by pattern PTN 101 is irradiated via the second row of projection optical units 100b, are misaligned. In Figure 4(D), region IRRa is shown by a dotted line and region IRRb is shown by a solid line. In Figure 4(D), the cross-hatched area is the part where region IRRa and region IRRb overlap and the cumulative exposure amount of the resist layer exceeds a predetermined threshold.

[0041] In the overlapping region Oa, if the position of region IRRa, where the exposure light patterned by pattern PTN 101 is irradiated via the first row of projection optical units 100a, is misaligned with the position of region IRRb, where the exposure light patterned by pattern PTN 101 is irradiated via the second row of projection optical units 100b, there will be regions where the cumulative exposure amount of the resist layer falls below a predetermined threshold. As a result, as shown in Figure 4(E), the line width of the formed resist image RI2 becomes thinner than the line width of the resist image RI1 formed when the positions of region IRRa and region IRRb coincide (as shown in Figure 4(B)) (see Figure 4(C)).

[0042] Therefore, when performing overlapping exposure, it is important that the position of region IRRa, which is irradiated via the first row of projection optical units 100a by the exposure light patterned by pattern PTN 101, coincides with the position of region IRRb, which is irradiated via the second row of projection optical units 100b by the exposure light patterned by pattern PTN 101.

[0043] The discrepancy between the position of the region irradiated by the exposure light patterned by pattern PTN 101 via the first row of projection optical units 100a, 100c, 100e, and 100g, and the position of the region irradiated by the exposure light patterned by the second row of pattern PTN 101 via the projection optical units 100b, 100d, and 100f, can be detected, for example, by performing a test exposure using a test mask on which a test pattern has been formed. However, it is desirable to be able to grasp the discrepancy between the position of the region irradiated by the exposure light via the first row of projection optical units 100a, 100c, 100e, and 100g, and the position of the region irradiated by the exposure light via the second row of projection optical units 100b, 100d, and 100f, even while the product exposure process (main exposure) is being performed.

[0044] Therefore, in the present embodiment, on the product mask instead of the test mask, a measurement mark is formed for measuring (detecting) the deviation (overlay accuracy) between the position of the area irradiated with the exposure light through the projection optical units 100a, 100c, 100e, 100g in the first column and the position of the area irradiated with the exposure light through the projection optical units 100b, 100d, 100f in the second column in the overlap area.

[0045] FIG. 5 is a diagram showing an example of the mask MSK1 according to the first embodiment. The mask MSK1 is a product mask on which measurement marks are formed. The mask MSK1 includes regions M-R1 and M-R2 where measurement marks are formed, and a region P-R1 where a circuit pattern for an electronic device or a device pattern for a display device is formed.

[0046] Regions M-R1 and M-R2 where measurement marks are formed are respectively arranged on both sides of the region P-R1 in the X direction. Note that a region where measurement marks are measured may be arranged on only one side of the region P-R1 in the X direction.

[0047] FIG. 6 is an enlarged view of the vicinity of the region M-R1 of the mask MSK1. In the region M-R1, a measurement mark MRK1 is formed for measuring (detecting) the deviation (overlay accuracy) between the position of the area irradiated with the exposure light through the projection optical units 100a, 100c, 100e, 100g in the first column and the position of the area irradiated with the exposure light through the projection optical units 100b, 100d, 100f in the second column.

[0048] As shown in FIG. 6, in the region M-R1, the measurement marks MRK1 are formed, for example, one by one in each region corresponding to the overlap regions Oa to Of. Note that a plurality of measurement marks MRK1 may be formed in each region corresponding to the overlap regions Oa to Of.

[0049] Also, in the region M-R1, the measurement marks MRK1 are formed, for example, one by one in each region corresponding to the non-overlap regions Sa to Sg. Note that a plurality of measurement marks MRK1 may be formed in each region corresponding to the non-overlap regions Sa to Sg.

[0050] Figure 7(A) shows an example of the measurement mark MRK1. In this embodiment, the measurement mark MRK1 is a mark that combines the pattern PTN1 shown in Figure 7(B) and the pattern PTN2 shown in Figure 7(C). More specifically, the measurement mark MRK1 is a mark where pattern PTN1 and pattern PTN2 intersect in the center.

[0051] As shown in Figure 7(B), pattern PTN1 is a pattern that extends in the X direction and whose width in the Y direction intersecting the X direction changes, including widths W1 and W2. More specifically, pattern PTN1 is a pattern in which the width in the Y direction decreases from the center in the X direction toward each end, including widths W1 and W2. That is, pattern PTN1 has a portion where the width in the Y direction is W1 or greater, and a portion where the width in the Y direction is W2 or less, which is less than W1, and the width in the Y direction gradually changes between the portion where the width in the Y direction is W1 or greater and the portion where it is W2 or less. In this embodiment, the position where the width in the Y direction is W2 is set to be slightly away from the end in the X direction of pattern PTN1 toward the center, but the position where the width in the Y direction is W2 may be the position of the end in the X direction of pattern PTN1. That is, in Figure 7(B), pattern PTN1 may have a shape as if it were cut off at the position where the width in the Y direction is W2.

[0052] As shown in Figure 7(C), pattern PTN2 is a pattern obtained by tilting pattern PTN1 by 90 degrees with respect to the X direction. Pattern PTN2 extends in the Y direction, and its width in the X direction changes, including widths W1 and W2. More specifically, the width of pattern PTN2 in the X direction decreases from the center in the Y direction toward each end, including widths W1 and W2.

[0053] Width W1 is the width over which a resist image is formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b, when there is a misalignment between the position of region IRRa, which is irradiated on the resist layer by the patterned exposure light of measurement mark MRK1 via projection optical unit 100a, and the position of region IRRb, which is irradiated via projection optical unit 100b so as to overlap region IRRa. Specifically, even when the positions of region IRRa and region IRRb are misaligned in any of the following directions: the stretching direction of pattern PTN1 (X direction), the stretching direction of pattern PTN2 (Y direction), or a direction in the horizontal plane that intersects the stretching direction of pattern PTN1 and the stretching direction of pattern PTN2, the width over which a resist image is formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b.

[0054] On the other hand, width W2 is the width in which a resist image is not formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b when there is a misalignment between the position of region IRRa, which is irradiated, for example, via projection optical unit 100a, and the position of region IRRb, which is irradiated, via projection optical unit 100b, so as to overlap region IRRa. Specifically, it is the width in which a resist image is not formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b when the position of region IRRa and the position of region IRRb are misaligned in any of the following directions: the stretching direction of pattern PTN1 (X direction), the stretching direction of pattern PTN2 (Y direction), or a direction in the horizontal plane that intersects the stretching direction of pattern PTN1 and the stretching direction of pattern PTN2.

[0055] Here, the formation of a resist image means that the cumulative exposure amount, which is the sum of the exposure amount of the resist layer by the exposure light through the projection optical unit 100a and the exposure amount of the resist layer by the exposure light through the projection optical unit 100b, exceeds a predetermined threshold, the resist layer formed with thickness has reacted completely to the bottom (boundary with the glass material), and the reacted portion can be identified when observed with an optical microscope after development.

[0056] Furthermore, the failure to form a resist image means that the cumulative exposure amount, which is the sum of the exposure amount of the resist layer by the exposure light via the projection optical unit 100a and the exposure amount of the resist layer by the exposure light via the projection optical unit 100b, falls below a predetermined threshold, resulting in the resist layer, which is formed with thickness, not reacting completely to the bottom, and therefore not being able to identify the reacted portion when observed with an optical microscope after development. Note that the state in which the resist layer does not react completely to the bottom means, for example, that only the surface of the resist layer reacts.

[0057] Furthermore, if the reacted area is identifiable when observed with an optical microscope, the resist layer does not necessarily need to have reacted completely to the bottom. In other words, if the reacted area is identifiable when observed with an optical microscope, it can be considered that a "resist image has been formed" even if the resist layer, which is formed with some thickness, has not reacted completely to the bottom.

[0058] Widths W1 and W2 will be explained in detail using Figures 8(A) to 8(D). In Figures 8(A) to 8(D), P1 indicates the position where the width of pattern PTN1 in the Y direction corresponds to the position of W1, and P2 indicates the position where the width of pattern PTN1 in the Y direction corresponds to the position of W2.

[0059] Figure 8(A) shows the case where the position of region IRRa, which is irradiated by pattern PTN1 via projection optical unit 100a, coincides with the position of region IRRb, which is irradiated by pattern PTN1 via projection optical unit 100b, so as to overlap with region IRRa. In Figure 8(A), the cumulative exposure amount in the overlapping area of ​​region IRRa and region IRRb (shown by cross-hatching) exceeds a predetermined threshold. As a result, a resist image RI3 is formed as shown in Figure 8(B).

[0060] Figure 8(C) shows a case where the position of region IRRa, which is irradiated by the exposure light patterned by pattern PTN1 via projection optical unit 100a, and the position of region IRRb, which is irradiated by the exposure light patterned by pattern PTN1 via projection optical unit 100b so as to overlap region IRRa, are shifted in the Y direction.

[0061] In Figure 8(C), region IRRa is shown by a solid line and region IRRb is shown by a dotted line. In Figure 8(C), the cumulative exposure amount in the area where region IRRa and region IRRb overlap (the area shown by cross-hatching) is greater than or equal to a predetermined threshold.

[0062] When the position of region IRRa, where the exposure light patterned by pattern PTN1 is irradiated via projection optical unit 100a, and the position of region IRRb, where the exposure light patterned by pattern PTN1 is irradiated via projection optical unit 100b, are misaligned, as shown in Figure 8(D), at position P1, where the width of pattern PTN1 in the Y direction corresponds to position W1, the accumulated exposure amount exceeds a predetermined threshold, and a resist image RI4 is formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b. On the other hand, at position P2, where the width of pattern PTN1 in the Y direction corresponds to position W2, the accumulated exposure amount is less than a predetermined threshold, and a resist image RI4 is not formed by the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b (see Figure 8(D)). As a result, the length L2 in the X direction of the resist image RI4 becomes shorter than the length L1 in the X direction of the resist image RI3 formed when the positions of region IRRa and region IRRb coincide. In this embodiment, by measuring the length of the resist image due to the exposure light via projection optical unit 100a and the exposure light via projection optical unit 100b, the amount of deviation between the position of region IRRa irradiated via projection optical unit 100a and the position of region IRRb irradiated via projection optical unit 100b so that the exposure light patterned by pattern PTN1 coincides with region IRRa can be accurately detected (measured). The same applies to pattern PTN2.

[0063] Figure 9(A) shows a pattern PTNC according to the comparative example. The pattern PTNC according to the comparative example is stretched in the X direction and has a constant width W2 in the Y direction. The width W2 in the Y direction of the pattern PTNC is, for example, 1.4 μm, and the length Lcx in the X direction of the pattern PTNC is, for example, 30 μm.

[0064] Figure 9(B) shows the case where the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by pattern PTNC, and the position of region IRRb, which is irradiated via projection optical unit 100b with exposure light patterned by pattern PTNC, are shifted by D [μm] in the Y direction. As shown in Figure 9(A), when detecting the shift amount D using pattern PTNC with a constant width W2 in the Y direction, the line width W of the formed resist image RI5 is measured by an optical microscope as shown in Figure 9(C), and the shift amount D is determined based on the relationship between the previously acquired line width W and the shift amount D.

[0065] Figure 9(D) shows the relationship between line width W and displacement D. The horizontal axis represents the displacement D, and the vertical axis represents the line width W of the resist image RI5. In the comparative example, when the positions of region IRRa and region IRRb are shifted in the Y direction, only the line width W in the Y direction of the resist image RI5 changes. Therefore, the displacement D can only be detected based on the change in line width W. However, as shown in Figure 9(D), in the comparative example, the change in line width W is small relative to the change in displacement D, making it difficult to determine the accurate displacement relative to the measured line width W with the resolution of an optical microscope.

[0066] Figure 10(A) shows a pattern PTN1 according to this embodiment. Pattern PTN1 is stretched in the X direction, and its width in the Y direction varies, including widths W1 and W2. The length Lpx in the X direction of pattern PTN1 is, for example, 30 μm, the width W1 is, for example, 1.7 μm, and the width W2 is, for example, 1.4 μm.

[0067] Figure 10(B) shows the case where the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by pattern PTN1, and the position of region IRRb, which is irradiated via projection optical unit 100b, are shifted by D [μm] in the Y direction. As shown in Figure 10(B), when detecting the amount of shift D in the Y direction using pattern PTN1 whose width in the Y direction varies including widths W1 and W2, the length L in the X direction of the formed resist image RI6 can be measured with an optical microscope as shown in Figure 10(C), and the amount of shift D can be determined based on the relationship between the previously acquired length L and the amount of shift D.

[0068] Figure 10(D) is a diagram showing the relationship between length L and displacement D. The horizontal axis represents the displacement D, and the vertical axis represents the length L of the resist image RI6. Since the length L of the resist image RI6 is larger than the line width W of the resist image RI5, accurate measurement by optical microscope is possible. Also, as shown in Figure 10(D), when using pattern PTN1 according to this embodiment, the change in length L is large with respect to the change in displacement D. Therefore, according to this embodiment, the displacement between the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by pattern PTN1, and the position of region IRRb, which is irradiated via projection optical unit 100b, can be detected with higher accuracy than when using pattern PTNC according to the comparative example.

[0069] In this embodiment, by measuring the length in the X direction of the resist image corresponding to the measurement mark MRK1 (pattern PTN1) shown in Figure 7(A), which is formed in the overlap region, using an optical microscope, the amount of displacement Dy in the Y direction between the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by the measurement mark MRK1, and the position of region IRRb, which is irradiated via projection optical unit 100b, can be obtained. Furthermore, by measuring the length in the Y direction of the resist image corresponding to the measurement mark MRK1 (pattern PTN2), which is formed in the overlap region, using an optical microscope, the amount of displacement Dx in the X direction between the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by the measurement mark MRK1, and the position of region IRRb, which is irradiated via projection optical unit 100b, can be obtained.

[0070] However, if the projection image from the projection optical units 100a to 100g is not properly focused, or if the illumination light IL emitted from the illumination system IOP is not properly lit, resulting in insufficient exposure of the resist layer, even if the position of the region IRRa irradiated via projection optical unit 100a by the exposure light patterned by measurement mark MRK1 coincides with the position of the region IRRb irradiated via projection optical unit 100b by the exposure light patterned by measurement mark MRK1, there may be parts where the accumulated exposure amount falls below a threshold, resulting in a shortening of the X-direction length and Y-direction length of the resist image. For example, if the position of region IRRa, where the exposure light patterned by the measurement mark MRK1 is irradiated via projection optical unit 100a, coincides with the position of region IRRb, where the exposure light patterned by the measurement mark MRK1 is irradiated via projection optical unit 100b, and the focus of the projected image by projection optical units 100a to 100g and the illuminance of the illumination light IL emitted from the illumination system IOP are appropriate, let Lxt be the length of the resist image formed in the X direction, and the length in the Y direction If the length is Lyt, then when the position of region IRRa, which is irradiated via projection optical unit 100a with exposure light patterned by measurement mark MRK1, coincides with the position of region IRRb, which is irradiated via projection optical unit 100b with exposure light patterned by measurement mark MRK1 (shift amount D = 0), and the exposure amount of the resist layer is insufficient (when the cumulative exposure amount is less than the threshold), the length Lx in the X direction of the formed resist image will be less than Lxt, and the length Ly in the Y direction will be less than Lyt. If the shift amount Dx in the X direction and the shift amount Dy in the Y direction are determined based on such lengths Lx and Lyt, there is a risk that the correct shift amount cannot be determined.

[0071] Furthermore, for example, if the illuminance of the illumination light IL is too high, it becomes difficult to detect the amount of misalignment between the position of region IRRa, which is irradiated via projection optical unit 100a by the exposure light patterned by measurement mark MRK1, and the position of region IRRb, which is irradiated via projection optical unit 100b by the exposure light patterned by measurement mark MRK1. If the illuminance of the illumination light IL is too high, even if there is a misalignment between the position of region IRRa, which is irradiated via projection optical unit 100a by the exposure light patterned by measurement mark MRK1, and the position of region IRRb, which is irradiated via projection optical unit 100b by the exposure light patterned by measurement mark MRK1, a resist image will be formed even in the portion where the width in the Y direction is width W2, and detection sensitivity for the amount of misalignment cannot be ensured.

[0072] Therefore, in the first embodiment, the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlapping region are measured to determine whether the exposure amount of the resist layer is appropriate. If the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 are both within a predetermined range (for example, between the first threshold and the second threshold), then the exposure amount of the resist layer is considered appropriate. The length Lx in the X direction of the resist image corresponding to the measurement mark MRK1 is measured using an optical microscope to obtain the displacement amount Dy in the Y direction, and the displacement amount Dx in the X direction is measured using an optical microscope to obtain the displacement amount Dx. Based on the displacement amounts Dx and Dy, the exposure apparatus 10 performs at least one of the following actions in at least one of the projection optical units 100a to 100g: shifting the X-axis position of the projected image by an image shift unit, rotating the projected image around the Z-axis by an image rotation unit, and enlarging or reducing the projected image by a magnification adjustment unit, so that in the overlapping region, the region in which exposure light is irradiated onto the resist layer via the first row of projection optical units and the region in which exposure light is irradiated onto the resist layer via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are superimposed.

[0073] On the other hand, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region are both less than the first threshold, the exposure apparatus 10 determines that the exposure amount of the resist layer is insufficient and increases the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. Furthermore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region are both greater than or equal to the second threshold, the exposure apparatus 10 determines that the illuminance of the illumination light IL is too high and decreases the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g.

[0074] Furthermore, if the resist layer is formed from a positive-type photosensitive material and a positive-type pattern is formed on the mask MSK1, if the exposure amount of the resist layer is insufficient, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the resist layer remaining after development) corresponding to the measurement mark MRK1 formed in the non-overlap region will each exceed the second threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region exceed the second threshold, the exposure apparatus 10 will determine that the exposure amount of the resist layer is insufficient and will increase the illuminance of the illumination light IL or adjust the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. Furthermore, if the resist layer is formed from a positive-type photosensitive material and a positive-type pattern is formed on the mask MSK1, if the illuminance of the illumination light IL is too high, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the resist layer remaining after development) corresponding to the measurement mark MRK1 formed in the non-overlap region will each fall below the first threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region fall below the first threshold, the exposure apparatus 10 will determine that the illuminance of the illumination light IL is too high and will either reduce the illuminance of the illumination light IL or adjust the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g.

[0075] If the resist layer is formed from a negative-type photosensitive material and a negative-type pattern is formed on the mask MSK1, then if the exposure amount of the resist layer is insufficient, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the resist layer remaining after development) corresponding to the measurement mark MRK1 formed in the non-overlap region will each fall below the first threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region fall below the first threshold, the exposure apparatus 10 determines that the exposure amount of the resist layer is insufficient and increases the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. Furthermore, if the resist layer is formed from a negative-type photosensitive material and a negative-type pattern is formed on the mask MSK1, if the illuminance of the illumination light IL is too high, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the resist layer remaining after development) corresponding to the measurement mark MRK1 formed in the non-overlap region will each exceed the second threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region exceed the second threshold, the exposure apparatus 10 will determine that the illuminance of the illumination light IL is too high and will either reduce the illuminance of the illumination light IL or adjust the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g.

[0076] If the resist layer is formed from a negative-type photosensitive material and a positive-type pattern is formed on the mask MSK1, then if the exposure of the resist layer is insufficient, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the part of the resist layer dissolved in the developer) corresponding to the measurement mark MRK1 formed in the non-overlap region will each exceed the second threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region exceed the second threshold, the exposure apparatus 10 will determine that the exposure of the resist layer is insufficient and will increase the illuminance of the illumination light IL or adjust the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. Furthermore, if the resist layer is formed from a negative-type photosensitive material and a positive-type pattern is formed on the mask MSK1, if the illuminance of the illumination light IL is too high, the length Lx in the X direction and the length Ly in the Y direction of the resist image (the portion of the resist layer dissolved in the developer) corresponding to the measurement mark MRK1 formed in the non-overlap region will each fall below the first threshold. Therefore, if the length Lx in the X direction and the length Ly in the Y direction of the resist image corresponding to the measurement mark MRK1 formed in the non-overlap region fall below the first threshold, the exposure apparatus 10 will determine that the illuminance of the illumination light IL is too high and will either reduce the illuminance of the illumination light IL or adjust the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. The same applies to subsequent embodiments and modifications. The operator of the exposure apparatus 10 may also adjust the illuminance of the illumination light IL and the focus state of the projected image.

[0077] As described in detail above, according to the first embodiment, the mask MSK1 is a mask used when performing overlapping exposure on at least a portion of the overlapping region of a substrate P having a resist layer, and includes a measurement mark MRK1 that is transferred to the resist layer. The measurement mark MRK1 has a pattern PTN1 that is stretched in the X direction and whose width in the Y direction intersecting the X direction varies, including widths W1 and W2. Width W1 is the width for which a resist image RI4 is formed on the resist layer by exposure light via projection optical unit 100a and exposure light via projection optical unit 100b when there is a Y-direction displacement between the position of region IRRa on the resist layer where exposure light patterned by measurement mark MRK1 is irradiated via the first row of projection optical unit 100a and the position of region IRRb where exposure light patterned by measurement mark MRK1 is irradiated via the second row of projection optical unit 100b so as to overlap region IRRa. Width W2 is the width for which a resist image RI4 is not formed on the resist layer by exposure light via projection optical unit 100a and exposure light via projection optical unit 100b when there is a Y-direction displacement between the position of region IRRa and the position of region IRRb. By using such a mask MSK1, even during the actual exposure, it is possible to measure the length in the X direction of the resist image of the measurement mark MRK1, thereby detecting the Y-direction shift between the position of region IRRa, which is irradiated by exposure light via projection optical unit 100a, and the position of region IRRb, which is irradiated by exposure light via projection optical unit 100b.

[0078] Furthermore, in the first embodiment, the measurement mark MRK1 is positioned at a location corresponding to the overlap region. This makes it possible to detect the difference between the position of region IRRa, where exposure light is irradiated via projection optical unit 100a, and the position of region IRRb, where exposure light is irradiated via projection optical unit 100b, in the overlap region where superimposed exposure is performed.

[0079] Furthermore, in the first embodiment, the measurement mark MRK1 includes a pattern PTN2 which is the pattern PTN1 tilted 90 degrees with respect to the X direction. This makes it possible to detect the X-direction shift between the position of region IRRa, which is irradiated with exposure light via projection optical unit 100a, and the position of region IRRb, which is irradiated with exposure light via projection optical unit 100b, by measuring the length of the resist image of the measurement mark MRK1 in the Y direction.

[0080] In the first embodiment described above, the measurement mark MRK1 was formed on the mask MSK1, but it may also be formed on the test mask for test exposure. That is, test exposure may be performed using the measurement mark MRK1.

[0081] (Modification 1) The measurement mark is not limited to the measurement mark MRK1 described in the first embodiment. Figure 11 shows the measurement mark MRK11 according to Modification 1. The measurement mark MRK11 according to Modification 1 includes mark MRK11a and mark MRK11b. Mark MRK11a includes a plurality of patterns PTN1 arranged at intervals d1 in the Y direction. Mark MRK11b includes a plurality of patterns PTN2 arranged at intervals d2 in the X direction. The intervals d1 and d2 may be the same or different.

[0082] In the modified example 1, the length in the X direction of the resist image corresponding to mark MRK11a and the length in the Y direction of the resist image corresponding to mark MRK11b, which are formed in the non-overlapping region, are measured to determine whether the exposure amount of the resist layer is appropriate.

[0083] When the exposure amount of the resist layer is appropriate, the length in the X direction of the resist image corresponding to the mark MRK11a formed in the overlap region can be measured, and the amount of Y-direction displacement between the position of the region where exposure light is irradiated onto the resist layer via the first row of projection optical units and the position of the region where exposure light is irradiated onto the resist layer via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units can be detected. Furthermore, the length in the Y direction of the resist image corresponding to the mark MRK11b formed in the overlap region can be measured, and the amount of X-direction displacement between the position of the region where exposure light is irradiated onto the resist layer via the first row of projection optical units and the position of the region where exposure light is irradiated onto the resist layer via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units can be detected. Since mark MRK11a includes multiple patterns PTN1 arranged at intervals d1 in the Y direction, the measurement results can be averaged and measurement accuracy improved compared to a mark containing only one pattern PTN1, as shown in Figure 10. The same applies to mark MRK11b.

[0084] (Modification 2) In the first embodiment and modification 1 described above, the pattern PTN1 was a pattern in which the width in the Y direction decreased from the center in the X direction toward each end, but it is not limited to this. Figure 12(A) shows a measuring mark MRK12 according to modification 2.

[0085] As shown in Figure 12(A), the measurement mark MRK12 includes mark MRK12a and mark MRK12b. Mark MRK12a includes a plurality of pattern PTN11 arranged at intervals d3 in the Y direction. Mark MRK12b includes a plurality of pattern PTN12 arranged at intervals d4 in the X direction. The intervals d3 and d4 may be the same or different.

[0086] Pattern PTN11 is a pattern that extends in the X direction and whose width in the Y direction varies, including widths W1 and W2, and whose width in the Y direction decreases from one end in the X direction to the other. Pattern PTN12 is a pattern obtained by tilting Pattern PTN11 by 90 degrees with respect to the X direction. Pattern PTN12 is a pattern in which the width in the X direction varies, including widths W1 and W2, and whose width in the X direction decreases from one end in the Y direction to the other.

[0087] When the exposure amount of the resist layer is appropriate, by measuring the length in the X direction of the resist image corresponding to the pattern PTN11 contained in the mark MRK12a formed in the overlap region, it is possible to detect the amount of shift in the Y direction between the position of the region in the overlap region where exposure light is irradiated onto the resist layer via the first row of projection optical units and the position of the region in the overlap region where exposure light is irradiated onto the resist layer via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units. Furthermore, by measuring the length in the Y direction of the resist image corresponding to the pattern PTN12 contained in the mark MRK12b formed in the overlap region, it is possible to detect the amount of shift in the X direction between the position of the region in the overlap region where exposure light is irradiated onto the resist layer via the first row of projection optical units and the position of the region in the overlap region where exposure light is irradiated onto the resist layer via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units.

[0088] As shown in Figure 12(B), pattern PTN11 is a line-symmetric pattern with respect to line LN1, but the pattern included in the measurement mark does not have to be line-symmetric. The pattern included in the measurement mark may be, for example, a line-symmetric pattern PTN11' as shown in Figure 12(C).

[0089] In the first embodiment and its modified form, the measurement mark may have only one of either pattern PTN1 (pattern PTN11) or pattern PTN2 (pattern PTN12). When the measurement mark has only pattern PTN1 (pattern PTN11), the amount of positional displacement in the Y direction can be detected, and when it has only pattern PTN2 (PTN12), the amount of positional displacement in the X direction can be detected.

[0090] 《Second Embodiment》 In the first embodiment, positional deviations in the X and Y directions could be detected, but it was difficult to detect positional deviations in directions tilted ±45 degrees with respect to the X direction. In the second embodiment, positional deviations can be detected even in directions tilted ±45 degrees.

[0091] Figure 13(A) shows the measurement mark MRK21 according to the second embodiment. In the following figures, the direction tilted at -45 degrees with respect to the X direction is referred to as the α direction, and the direction tilted at 45 degrees with respect to the X direction is referred to as the β direction. The α direction and the β direction are orthogonal.

[0092] As shown in Figure 13(A), the measurement mark MRK21 includes mark MRK21a and mark MRK21b. Mark MRK21a is a pattern that combines pattern PTN1 and pattern PTN2, and mark MRK21b is a pattern that combines pattern PTN3 and pattern PTN4.

[0093] As shown in Figure 13(B), pattern PTN1 extends in the X direction, and its width in the Y direction intersecting the X direction changes, including widths W1 and W2. Specifically, pattern PTN1 is a pattern in which the width in the Y direction intersecting the X direction decreases from the center in the X direction toward each end, including widths W1 and W2.

[0094] As shown in Figure 13(C), pattern PTN2 is a pattern obtained by tilting pattern PTN1 by 90 degrees with respect to the X direction. Pattern PTN2 extends in the Y direction, and its width in the X direction changes, including widths W1 and W2. Specifically, pattern PTN2 is a pattern in which the width in the X direction decreases from the center in the Y direction toward each end, including widths W1 and W2.

[0095] As shown in Figure 13(D), pattern PTN3 is a pattern obtained by tilting pattern PTN1 at -45 degrees with respect to the X direction. Pattern PTN3 extends in the α direction, and its width in the β direction changes, including widths W1 and W2. Specifically, the width of pattern PTN3 in the β direction decreases from the center in the α direction toward each end, including widths W1 and W2.

[0096] As shown in Figure 13(E), pattern PTN4 is a pattern obtained by tilting pattern PTN1 at +45 degrees with respect to the X direction. Pattern PTN4 extends in the β direction, and its width in the α direction changes, including widths W1 and W2. Specifically, the width of pattern PTN4 in the α direction decreases in the β direction from the center toward each end, including widths W1 and W2.

[0097] In mark MRK21a, patterns PTN1 and PTN2 intersect in the center, and in mark MRK21b, patterns PTN3 and PTN4 intersect in the center.

[0098] In the second embodiment, in the overlapping region, the size of the resist image formed by the exposure light patterned by mark MRK21a of the measurement mark MRK21 and the size of the resist image formed by the exposure light patterned by mark MRK21b can be measured using an optical microscope to detect the direction and amount of misalignment.

[0099] Figure 14 shows the relationship between the positional misalignment in the overlapping region between the region illuminated by exposure light via the first row of projection optical units and the region illuminated by exposure light via the second row of projection optical units, which have an exposure field that overlaps with the exposure field of the first row of projection optical units, and the resulting resist image.

[0100] Cases 1 to 4 will be described as states of misalignment. Case 1 is the case in which, in the overlapping region, the position of the region irradiated by exposure light via the first row of projection optical units and the position of the region irradiated by exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are not misaligned in any of the X, Y, α, and β directions, and the exposure amount of the resist layer is appropriate.

[0101] In Figure 14, the "projection state of mark MRK21a" indicates the overlapping region, specifically region IRRa1, where the exposure light patterned by mark MRK21a is irradiated through the first row of projection optical units, and region IRRa2, where the exposure light patterned by mark MRK21a is irradiated through the second row of projection optical units. In Case 1, region IRRa1, where the exposure light patterned by mark MRK21a is irradiated through the first row of projection optical units, and region IRRa2, where the exposure light patterned by mark MRK21a is irradiated through the second row of projection optical units, coincide. Region IRRa1, where the exposure light patterned by mark MRK21a is irradiated through the first row of projection optical units, is shown with right-sloping hatching, and region IRRa2, where the exposure light patterned by mark MRK21a is irradiated through the second row of projection optical units, is shown with left-sloping hatching. Therefore, the region where the exposure light patterned by mark MRK21a is irradiated through the first row of projection optical units, IRRa1, and the region where the exposure light patterned by mark MRK21a is irradiated through the second row of projection optical units, IRRa2, overlap is shown by cross-hatching.

[0102] In Figure 14, "Resist image of mark MRK21a" shows the resist image RIa corresponding to mark MRK21a formed in each case. In case 1, the resist image RIa corresponding to mark MRK21a has the same length Lx1 in the X direction and length Ly1 in the Y direction, and is the length Lth obtained when the exposure amount (integrated exposure amount) of the resist layer is appropriate.

[0103] In Figure 14, the "projection state of mark MRK21b" indicates the overlapping region, specifically region IRRb1, where the exposure light patterned by mark MRK21b is irradiated through the first row of projection optical units, and region IRRb2, where the exposure light patterned by mark MRK21b is irradiated through the second row of projection optical units. In Case 1, region IRRb1, where the exposure light patterned by mark MRK21b is irradiated through the first row of projection optical units, and region IRRb2, where the exposure light patterned by mark MRK21b is irradiated through the second row of projection optical units, coincide. Region IRRb1, where the exposure light patterned by mark MRK21b is irradiated through the first row of projection optical units, is shown with right-sloping hatching, and region IRRb2, where the exposure light patterned by mark MRK21b is irradiated through the second row of projection optical units, is shown with left-sloping hatching. Therefore, the region where the exposure light patterned by mark MRK21b is irradiated through the first row of projection optical units, IRRb1, and the region where the exposure light patterned by mark MRK21b is irradiated through the second row of projection optical units, IRRb2, overlap, is shown by cross-hatching.

[0104] In Figure 14, "Resist image of mark MRK21b" shows the resist image RIb corresponding to mark MRK21b formed in each case. In case 1, the resist image RIb corresponding to mark MRK21b has the same length Lα1 in the α direction and length Lβ1 in the β direction, and lengths Lα1 and Lβ1 are lengths Lth obtained when the exposure amount (integrated exposure amount) of the resist layer is appropriate.

[0105] Case 2 is when, in the overlapping region, the position of the region irradiated by exposure light through the first row of projection optical units and the position of the region irradiated by exposure light through the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are not misaligned in any of the X, Y, α, and β directions, but the exposure amount of the resist layer is insufficient.

[0106] In case 2, the length Lx2 in the X direction and the length Ly2 in the Y direction of the resist image RIa corresponding to mark MRK21a are approximately equal to each other and are shorter than the length Lx1 and the length Ly1 in the Y direction in case 1 (when the exposure amount of the resist layer is appropriate). That is, the length Lx2 and the length Ly2 in the Y direction are approximately equal to each other and are shorter than the length Lth obtained when the exposure amount (cumulative exposure amount) of the resist layer is appropriate. Also, the length Lα2 in the α direction and the length Lβ2 in the β direction of the resist image RIb corresponding to mark MRK21b are approximately equal to each other and are shorter than the length Lα1 and the length Lβ1 in the β direction in case 1. That is, the length Lα2 and the length Lα2 in the Y direction are shorter than the length Lth obtained when the exposure amount (cumulative exposure amount) of the resist layer is appropriate. Lengths Lx1, Ly1, Lα1, and Lβ1 are approximately equal to each other.

[0107] Thus, if the length Lx2 in the X direction and the length Ly2 in the Y direction of the resist image RIa corresponding to mark MRK21a, and the length Lα2 in the α direction and the length Lβ2 in the β direction of the resist image RIb corresponding to mark MRK21b are approximately equal to each other and shorter than the length Lth obtained when the exposure amount (cumulative exposure amount) of the resist layer is appropriate, it can be determined that the exposure amount of the resist layer is insufficient. In this case, the exposure apparatus 10 increases the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. Furthermore, if the length Lx2 in the X direction and the length Ly2 in the Y direction of the resist image RIa corresponding to mark MRK21a, and the length Lα2 in the α direction and the length Lβ2 in the β direction of the resist image RIb corresponding to mark MRK21b are approximately equal to each other and longer than the length Lth obtained when the exposure amount (cumulative exposure amount) of the resist layer is appropriate, it can be determined that the illuminance of the illumination light IL is too high. In this case, the exposure apparatus 10 reduces the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g.

[0108] Case 3 is when the exposure amount of the resist layer is appropriate, but in the overlap region, the position of the region irradiated by the exposure light via the first row of projection optical units and the position of the region irradiated by the exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the β direction.

[0109] In case 3, the overlap between the region irradiated by the exposure light patterned by pattern PTN1 of mark MRK21a via the first row of projection optical units and the region irradiated by the exposure light patterned by pattern PTN1 of mark MRK21a via the second row of projection optical units is smaller than in case 1. Also, the overlap between the region irradiated by the exposure light patterned by pattern PTN2 of mark MRK21a via the first row of projection optical units and the region irradiated by the exposure light patterned by pattern PTN2 of mark MRK21a via the second row of projection optical units is smaller than in case 1. As a result, the length Lx3 in the X direction and the length Ly3 in the Y direction of the resist image RIa corresponding to mark MRK21a are approximately equal to each other, but are smaller than the length Lx1 and the length Ly1 in the Y direction in case 1.

[0110] On the other hand, the overlap between the region irradiated by the exposure light patterned by the pattern PTN3 of mark MRK21b via the first row of projection optical units and the region irradiated by the exposure light patterned by the pattern PTN3 of mark MRK21b via the second row of projection optical units is significantly reduced compared to case 1. The overlap between the region irradiated by the exposure light patterned by the pattern PTN4 of mark MRK21b via the first row of projection optical units and the region irradiated by the exposure light patterned by the pattern PTN4 of mark MRK21b via the second row of projection optical units is slightly reduced compared to case 1. Therefore, the length Lα3 in the α direction of the resist image RIb corresponding to mark MRK21b becomes smaller than the length Lβ3 in the β direction. Also, the length Lβ3 becomes slightly smaller than the length Lβ1 in case 1.

[0111] Thus, in case 3, the length Lx3 in the X direction and the length Ly3 in the Y direction of the resist image RIa corresponding to mark MRK21a are approximately equal to each other and smaller than the length Lx1 and the length Ly1 in the Y direction in case 1, and the length Lα3 in the α direction of the resist image RIb corresponding to mark MRK21b is smaller than the length Lβ3 in the β direction, and if length Lβ3 is smaller than the length Lβ1 in case 1, then it can be determined that in the overlapping region, the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are shifted in the β direction. Furthermore, the amount of shift in the β direction can be detected (determined) by the length Lα3 in the α direction of the resist image RIb corresponding to mark MRK21b.

[0112] Case 4 is when the exposure amount of the resist layer is appropriate, but in the overlap region, the position of the region irradiated by exposure light via the first row of projection optical units and the position of the region irradiated by exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the X direction.

[0113] In case 4, the overlap between the region irradiated by the exposure light patterned by pattern PTN1 of mark MRK21a via the first row of projection optical units and the region irradiated by the exposure light patterned by pattern PTN1 of mark MRK21a via the second row of projection optical units is slightly reduced compared to case 1. Also, the overlap between the region irradiated by the exposure light patterned by pattern PTN2 of mark MRK21a via the first row of projection optical units and the region irradiated by the exposure light patterned by pattern PTN2 of mark MRK21a via the second row of projection optical units is significantly reduced compared to case 1. As a result, the Y-direction length Ly4 of the resist image RIa corresponding to mark MRK21a becomes shorter than the X-direction length Lx4, and the X-direction length Lx4 becomes slightly smaller than the length Lx1 in case 1.

[0114] On the other hand, the overlap between the region irradiated by the exposure light patterned by the pattern PTN3 of mark MRK21b via the first row of projection optical units and the region irradiated by the exposure light patterned by the pattern PTN3 of mark MRK21b via the second row of projection optical units is smaller than in case 1. The overlap between the region irradiated by the exposure light patterned by the pattern PTN4 of mark MRK21b via the first row of projection optical units and the region irradiated by the exposure light patterned by the pattern PTN4 of mark MRK21b via the second row of projection optical units is smaller than in case 1. As a result, the lengths Lα4 in the α direction and Lβ4 in the β direction of the resist image RIb corresponding to mark MRK21b are approximately equal to each other, but are smaller than the lengths Lα1 and Lβ1 in the Y direction in case 1.

[0115] Thus, if the length Ly4 in the Y direction of the resist image RIa corresponding to mark MRK21a is smaller than the length Lx4 in the X direction, and length Lx4 is approximately equal to (slightly smaller than) length Lx1 in case 1, and the lengths Lα4 in the α direction and Lβ4 in the β direction of the resist image RIb corresponding to mark MRK21b are approximately equal to each other and smaller than lengths Lα1 and Lα1 in case 1, then it can be determined that the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are shifted in the X direction. Furthermore, the amount of shift in the X direction can be detected by the length Ly4 in the Y direction of the resist image RIa corresponding to mark MRK21a.

[0116] In the second embodiment, the exposure amount of the resist layer can be determined by the lengths of the resist image RIa corresponding to mark MRK21a in the X and Y directions, and the lengths of the resist image RIb corresponding to mark MRK21b in the α and β directions. Therefore, unlike the first embodiment, it is sufficient that the measurement mark MRK21 is formed at least in a position corresponding to the overlap region. In other words, the measurement mark MRK21 does not need to be formed in the non-overlap region.

[0117] (Modification 1) The measurement mark is not limited to the measurement mark MRK21 described in the second embodiment. Figure 15 shows the measurement mark MRK22 according to Modification 1. The measurement mark MRK22 according to Modification 1 includes mark MRK22a, mark MRK22b, mark MRK22c, and mark MRK22d.

[0118] Mark MRK22a includes multiple patterns PTN1 arranged at intervals d11 in the Y direction. Mark MRK22b includes multiple patterns PTN2 arranged at intervals d12 in the X direction. Mark MRK22c includes multiple patterns PTN3 arranged at intervals d13 in the β direction. Mark MRK22d includes multiple patterns PTN4 arranged at intervals d14 in the α direction.

[0119] The length in the X direction of the resist image corresponding to mark MRK22a, mark MRK22b, mark MRK22c, mark MRK22d, and mark MRK22d are measured. Based on these measurements, the direction and amount of misalignment can be detected.

[0120] <Third Embodiment> In the third embodiment, the method for detecting the direction and amount of misalignment differs from that of the first and second embodiments. Figure 16 shows the measurement mark MRK31 according to the third embodiment.

[0121] As shown in Figure 16, the measurement mark MRK31 is a mark where patterns PTN1, PTN2, PTN3, and PTN4 intersect in the center. Patterns PTN1 to PTN4 have the same configuration as in the second embodiment.

[0122] Figure 17 shows the relationship between the positional misalignment between the region irradiated with exposure light via the first row of projection optical units and the region irradiated with exposure light via the second row of projection optical units, which have an exposure field that overlaps with the exposure field of the first row of projection optical units, and the resist image formed.

[0123] Case 1 is when, in the overlapping region, the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units having an exposure field that overlaps with the exposure field of the first row of projection optical units are not misaligned in any of the X, Y, α, and β directions, and the exposure amount of the resist layer is appropriate.

[0124] In Figure 17, the "projection state of the measurement mark MRK31" indicates the region IRR1, where the exposure light patterned by the measurement mark MRK31 is irradiated through the first row of projection optical units, and the region IRR2, where the exposure light patterned by the measurement mark MRK31 is irradiated through the second row of projection optical units. In Case 1, the region IRR1, where the exposure light patterned by the measurement mark MRK31 is irradiated through the first row of projection optical units, and the region IRR2, where the exposure light patterned by the measurement mark MRK31 is irradiated through the second row of projection optical units, coincide. The region IRR1, where the exposure light patterned by the measurement mark MRK31 is irradiated through the first row of projection optical units, is shown with right-sloping hatching, and the region IRR2, where the exposure light patterned by the measurement mark MRK31 is irradiated through the second row of projection optical units, is shown with left-sloping hatching. Therefore, the region where the exposure light patterned by the measurement mark MRK31 is irradiated through the first row of projection optical units, IRR1, and the region where the exposure light patterned by the measurement mark MRK31 is irradiated through the second row of projection optical units, IRR2, overlap, is indicated by cross-hatching.

[0125] In Figure 17, the "resist image" shows the resist image RI31 corresponding to the measurement mark MRK31 formed in each case. The dotted line indicates the ellipse obtained when the formed resist image is elliptically fitted. In the third embodiment, elliptic parameters are obtained by elliptically fitting the resist image. Specifically, the direction of the major axis of the ellipse and the ellipticity (= minor axis / major axis) are obtained.

[0126] If there is no misalignment and the exposure of the resist layer is appropriate, when the formed resist image RI31 is fitted to an ellipse, the resulting ellipse OV1 is a circle with equal major and minor axes, for example, radius r1. Radius r1 is the radius rth obtained when the exposure of the resist layer is appropriate. In case 1, the ellipticity is 1.

[0127] Case 2 is when, in the overlapping region, the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are not misaligned in any of the X, Y, α, and β directions, but the exposure amount of the resist layer is insufficient.

[0128] In case 2, the ellipse OV2 obtained by elliptical fitting the formed resist image RI31 is a circle with equal major and minor axes, for example, a radius r2. Because the exposure of the resist image is insufficient, the radius r2 is smaller than the radius r1 in case 1 (the radius rth obtained when the exposure of the resist layer is appropriate). In case 2, the ellipticity is 1. Thus, if the ellipse obtained by elliptical fitting the vertex of the resist image RI31 corresponding to the measurement mark MRK31 is a circle with radius r2 (<rth), it can be determined that the exposure of the resist layer is insufficient. In this case, the exposure apparatus 10 increases the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g. If the illuminance of the illumination light IL is too high, the ellipse OV2 obtained by elliptical fitting the formed resist image RI31 will have an ellipticity of 1, and the radius r2 will be larger than the radius r1 (radius rth). In this case, the exposure apparatus 10 reduces the illuminance of the illumination light IL or adjusts the focus state of the projected image using the focus adjustment section of the projection optical units 100a to 100g.

[0129] Case 3 is when the exposure amount of the resist layer is appropriate, but in the overlapping region, the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the β direction.

[0130] In case 3, the ellipse OV3 obtained by elliptical fitting the formed resist image RI3 is an ellipse with the β direction as the major axis and the α direction as the minor axis. In this case, the direction of the major axis (β direction) is the direction in which the position of the region irradiated by exposure light via the first row of projection optical units and the position of the region irradiated by exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are offset. The amount of offset can be determined by the ellipticity (minor axis rb3 / major axis ra3). Specifically, the relationship between the ellipticity and the amount of offset can be obtained in advance by experiment or simulation, and the amount of offset can be determined based on the ellipticity obtained from the measurement results of the minor axis rb3 and major axis ra3, and the relationship between the ellipticity and the amount of offset obtained in advance.

[0131] Case 4 is when the exposure amount of the resist layer is appropriate, but in the overlapping region, the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the X direction.

[0132] In case 4, the ellipse OV4 obtained by elliptical fitting the formed resist image RI31 is an ellipse with the X direction as the major axis and the Y direction as the minor axis. In this case, the direction of the major axis (X direction) is the direction in which the position of the region irradiated with exposure light via the first row of projection optical units and the position of the region irradiated with exposure light via the second row of projection optical units, which has an exposure field that overlaps with the exposure field of the first row of projection optical units, are offset. The amount of offset is determined by the ellipticity (minor axis rb4 / major axis ra4).

[0133] In this way, by elliptical fitting the resist image RI31 of the measurement mark MRK31, the elliptical parameters obtained allow us to estimate the direction in which the position of the region irradiated by exposure light via the first row of projection optical units and the position of the region irradiated by exposure light via the second row of projection optical units, which have an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the direction of the major axis, and the amount of shift can be estimated by the ellipticity (= minor axis / major axis).

[0134] (Modification 1) The measurement marks used when measuring the direction and amount of misalignment by elliptic fitting are not limited to the measurement marks shown in Figure 16. Figure 18(A) shows another example of measurement marks used when measuring the direction and amount of misalignment by elliptic fitting.

[0135] As shown in Figure 18(A), the measurement mark MRK32 according to the modified example 1 is a mark formed by arranging pattern PTN31 at 72-degree intervals in the circumferential direction. Figure 18(B) shows pattern PTN31. Pattern PTN31 is a pattern in which the width in the direction perpendicular to the extension direction (X direction) decreases from one end in the extension direction (Y direction) to the other end, including widths W1 and W2.

[0136] Figure 19(A) shows a case in the overlap region where the position of the region where exposure light is irradiated onto the resist layer via the first row of projection optical units and the position of the region where exposure light is irradiated onto the resist layer via the second row of projection optical units, which have an exposure field that overlaps with the exposure field of the first row of projection optical units, are shifted in the X direction. Figure 19(B) shows the resist image RI41 formed in the case of Figure 19(A). In the modified example 1 as well, as shown in Figure 19(B), the direction and amount of displacement can be estimated by elliptic fitting of the resist image RI41 and obtaining elliptic parameters. Specifically, the direction of positional displacement can be estimated from the direction of the major axis of the resist image RI41, and the amount of positional displacement can be estimated from the ellipticity (= minor axis rb / major axis ra).

[0137] (Modifications 2 and 3) Figures 20(A) and 20(B) show alternative examples of measurement marks used when measuring the direction and amount of displacement by elliptic fitting of a resist image. As shown in Figure 20(A), the measurement mark MRK33 has pattern PTN31 arranged radially at 120-degree intervals in the circumferential direction. That is, the measurement mark MRK33 only needs to have at least three pattern PTN31 arranged radially such that their stretching directions are not orthogonal to each other. By elliptic fitting of the resist image of such a measurement mark MRK33 and obtaining elliptic parameters, the direction and amount of displacement can be estimated.

[0138] Furthermore, as shown in Figure 20(B), in the measurement mark MRK34, the pattern PTN31 is not arranged at equal intervals (equal angles) in the circumferential direction. If the extension directions of the radially arranged pattern PTN31 are not perpendicular to each other, the pattern PTN31 included in the measurement mark does not need to be arranged at equal intervals (equal angles) in the circumferential direction.

[0139] 《Fourth Embodiment》 In the first to third embodiments, measurement marks were used to detect the displacement between the position of the region irradiated by exposure light via the first row of projection optical units 100a, 100c, 100e, and 100g and the position of the region irradiated via the second row of projection optical units 100b, 100d, and 100f in the overlap region, that is, the displacement of the region irradiated by exposure light via different projection optical units. However, the invention is not limited to this.

[0140] The exposure apparatus may have one projection optical unit instead of multiple projection optical units 100a to 100f. Figure 21 is a diagram showing the schematic configuration of the exposure apparatus 10A according to the fourth embodiment.

[0141] The exposure apparatus 10A includes an illumination system IOP-A, a mask stage MST that holds the mask MSK2, a projection optical unit 100, a substrate stage PST that holds the substrate P, and control systems for these components.

[0142] The exposure apparatus 10A synchronously scans the mask MSK2 and the substrate P, and exposes the substrate P with exposure light patterned by the pattern formed on the mask MSK2. In the exposure apparatus 10A, when exposing an area on the substrate P larger than the image of the pattern formed on the mask MSK2 to form a pattern (referred to as the pattern formation region), multiple shot regions are set for each pattern formation region, and so-called overlapping exposure (sequential exposure) is performed, in which the substrate P is exposed multiple times while overlapping parts of the pattern image.

[0143] For example, as shown in Figure 22(A), a first shot region SR1 and a second shot region SR2 that partially overlap the first shot region are set for a single pattern formation region PFR1 set on the substrate P, and overlapping exposure is performed by exposing each pattern image to each shot region with a single mask MSK2.

[0144] Specifically, first, the mask MSK2 is moved to its initial position, and the substrate P is moved to the initial position for starting exposure to the first shot area SR1. Then, the mask MSK2 and the substrate P are scanned synchronously, and the exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the first shot area SR1 via the projection optical unit 100. Next, the mask MSK2 is moved to its initial position, and the substrate P is stepped to the initial position for starting exposure to the second shot area SR2. The mask MSK2 and the substrate P are scanned synchronously, and the exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the second shot area SR2 via the projection optical unit 100. This makes it possible to form a pattern in the pattern formation area PFR1, which has a larger area than the pattern image of the mask MSK2.

[0145] In this case, in the overlapping region Ox where the first shot region SR1 and the second shot region SR2 overlap, overlapping exposure (next exposure) is performed, so overlapping accuracy is important. In the fourth embodiment, measurement marks are formed on the mask MSK2 in order to detect the overlapping accuracy (positional misalignment between the first shot region SR1 and the second shot region SR2) in the overlapping region Ox where the first shot region SR1 and the second shot region SR2 overlap during the exposure.

[0146] Figure 22(B) shows an example of the mask MSK2 according to the fourth embodiment.

[0147] The mask MSK2 has a region P-R41 on which a circuit pattern for an electronic device or a device pattern for a display device is formed, and regions M-R41, M-R42, M-R43, and M-R44 on which measurement marks are formed.

[0148] Regions M-R41 and M-R42 are regions corresponding to the overlapping region Ox (see Figure 22(A)) where the first shot region SR1 and the second shot region SR2 overlap when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the first shot region SR1, and are set in a position where measurement marks are formed outside the pattern formation region PFR1.

[0149] Regions M-R43 and M-R44 are regions corresponding to overlap region Ox when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the second shot region SR2, and are set to be in positions that perfectly overlap (coincide) with regions M-R41 and M-R42, respectively, when the second shot region SR2 is exposed as designed, i.e., without any misalignment.

[0150] As a result, when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the first shot region SR1, the exposure light patterned by the measurement marks formed on regions M-R41 and M-R42, and when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the second shot region SR2, the exposure light patterned by the measurement marks formed on regions M-R43 and M-R44, form a resist image RI41 corresponding to the measurement marks at the position shown in Figure 23. By measuring the size of the formed resist image RI41, or by elliptical fitting the resist image RI41, the positional misalignment between the first shot region SR1 and the second shot region SR2 can be detected. When the exposure apparatus 10A irradiates exposure light onto at least one of the first shot area SR1 or the second shot area SR2 of the substrate to be subsequently exposed, it performs at least one of the following actions: shifting the position of the projected image in the X-axis direction and the position in the Y-axis direction, rotating the projected image about the Z-axis, and enlarging or reducing the projected image, thereby improving the superposition accuracy of the overlapping area Ox.

[0151] The measurement marks formed in regions M-R41, M-R42, M-R43, and M-R44 of the mask MSK2 may be any of the measurement marks of the first to third embodiments or their modifications. However, when using the measurement marks according to the first embodiment, measurement marks are also formed in the mask MSK2 in a region corresponding to the region where the first shot region SR1 and the second shot region SR2 do not overlap, and in a position where the measurement marks are formed outside the pattern formation region PFR1 (the region shown by the dotted line in Figure 22(B)).

[0152] In Figure 22(A), the case where the first shot area SR1 and the second shot area SR2 overlap in the X direction was explained, but the first shot area SR1 and the second shot area SR2 may also overlap in the Y direction.

[0153] Even in this case, the measurement marks on the mask MSK2 should be formed in the region corresponding to the overlap where the first shot region SR1 and the second shot region SR2 overlap when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the first shot region SR1, such that the measurement marks are formed outside the pattern formation region PFR1, and in the region corresponding to the overlap region when exposure light patterned by the pattern formed on the mask MSK2 is irradiated onto the second shot region SR2, such that when the second shot region SR2 is exposed without misalignment, the measurement marks formed by the irradiation of exposure light onto the second shot region SR2 overlap with the measurement marks formed by the irradiation of exposure light onto the first shot region SR1.

[0154] <Fifth Embodiment> In the first to fourth embodiments described above, the case in which the exposure apparatus is an exposure apparatus that uses a mask was explained, but the exposure apparatus may also be an exposure apparatus that uses a spatial light modulator.

[0155] Figure 24 is a perspective view showing an overview of the external configuration of the exposure apparatus 10D according to the fifth embodiment. The exposure apparatus 10D is a device that projects exposure light, whose intensity distribution in space is dynamically modulated by a spatial light modulator (SLM), onto a substrate to be exposed. Examples of spatial light modulators include liquid crystal elements, digital micromirror devices (DMDs), and magneto-optical spatial light modulators (MOSLMs). The exposure apparatus 10D according to this embodiment includes a DMD chip containing a DMD 200 as the spatial light modulator.

[0156] In a particular embodiment, the exposure apparatus 10D is a step-and-scan type projection exposure apparatus (scanner) that uses a rectangular (square) glass substrate used in a display device (flat panel display) or the like as the object to be exposed. The glass substrate is a flat panel display substrate P with at least one side length or diagonal length of 500 mm or more. The exposure apparatus 10D exposes a projection image of a pattern made by DMD onto a photosensitive layer (photoresist) formed to a certain thickness on the surface of the substrate P. After exposure, the substrate P is removed from the exposure apparatus 10D and sent to a predetermined process step (film formation step, etching step, plating step, etc.) after a development step.

[0157] The exposure apparatus 10D includes a stage apparatus comprising a pedestal 2 mounted on active vibration isolation units 1a, 1b, 1c, 1d (1d not shown), a base plate 3 mounted on the pedestal 2, an XY stage 4A movable in two dimensions on the base plate 3, a substrate holder 4B that holds a substrate P in a planar position on the XY stage 4A, and laser length measuring interferometers (hereinafter also simply called interferometers) IFX, IFY1 to IFY4 that measure the two-dimensional movement position of the substrate holder 4B (substrate P). Such a stage apparatus is disclosed, for example, in U.S. Patent Publication No. 2010 / 0018950 and U.S. Patent Publication No. 2012 / 0057140.

[0158] In Figure 24, the XY plane of the Cartesian coordinate system XYZ is set parallel to the flat surface of the stage platen 3 of the stage device, and the XY stage 4A is set to be able to move translationally within the XY plane. In this embodiment, the direction parallel to the X axis of the coordinate system XYZ is set as the scanning movement direction of the substrate P (XY stage 4A) during scan exposure. The movement position of the substrate P in the X-axis direction is sequentially measured by the interferometer IFX, and the movement position in the Y-axis direction is sequentially measured by at least one (preferably two or more) of the four interferometers IFY1 to IFY4. The substrate holder 4B is configured to be able to move slightly relative to the XY stage 4A in the direction of the Z axis perpendicular to the XY plane, and to be able to tilt slightly in any direction relative to the XY plane, thereby actively adjusting the focus and leveling (parallelism) between the surface of the substrate P and the imaging plane of the projected pattern. Furthermore, the substrate holder 4B is configured to be able to rotate slightly (θz rotation) around an axis parallel to the Z axis in order to actively adjust the tilt of the substrate P in the XY plane.

[0159] The exposure apparatus 10D further includes an optical platen 5 that holds a plurality of exposure (drawing) module groups MU(A), MU(B), and MU(C), and main columns 6a, 6b, 6c, and 6d (6d is not shown) that support the optical platen 5 from the pedestal 2. Each of the plurality of exposure module groups MU(A), MU(B), and MU(C) is attached to the optical platen 5 on the +Z side. Note that each of the plurality of exposure module groups MU(A), MU(B), and MU(C) may be attached to the optical platen 5 individually, or they may be attached to the optical platen 5 in a state where rigidity is increased by connecting two or more exposure modules to each other. Each of the plurality of exposure module groups MU(A), MU(B), and MU(C) is attached to the optical platen 5 on the +Z side and has an illumination unit ILU that receives illumination light from the optical fiber unit FBU, and a projection unit PLU that is attached to the -Z side of the optical platen 5 and has an optical axis parallel to the Z axis. Furthermore, each of the exposure module groups MU(A), MU(B), and MU(C) is equipped with a DMD200, which acts as a modulation unit that reflects the illumination light from the illumination unit ILU in the -Z direction and directs it into the projection unit PLU. The detailed configuration of the exposure module, consisting of the illumination unit ILU, DMD200, and projection unit PLU, will be described later.

[0160] Multiple alignment systems (microscopes) ALGs for detecting alignment marks formed at predetermined positions on the substrate P are mounted on the -Z direction side of the optical table 5 of the exposure apparatus 10D. A calibration reference section CU for calibration is provided at the -X direction end of the substrate holder 4B. Calibration includes at least one of the following: confirmation (calibration) of the relative positional relationship of each detection field of each alignment system ALG in the XY plane; confirmation (calibration) of the baseline error between each projection position of the pattern image projected from each projection unit PLU of the exposure module group MU(A), MU(B), and MU(C) and the position of each detection field of each alignment system ALG; and confirmation of the position and image quality of the pattern image projected from the projection unit PLU. Although not shown in Figure 24, in this embodiment, each of the exposure module groups MU(A), MU(B), and MU(C) consists of nine modules arranged at regular intervals in the Y-axis direction, but the number of modules may be less than or more than nine. Also, in Figure 24, the exposure modules are arranged in three rows in the X-axis direction, but the number of rows of exposure modules arranged in the X-axis direction may be two or fewer, or four or more.

[0161] Figure 25 shows an example of the arrangement of the projection area IAn of the DMD 200 projected onto the substrate P by the projection units PLU of each of the exposure module groups MU(A), MU(B), and MU(C), with the Cartesian coordinate system XYZ set to the same as in Figure 24. The projection area IAn can be described as the irradiation range (group of light irradiation areas) of illumination light that is reflected by a plurality of micromirrors (light modulation elements) Ms of the DMD 200 and guided onto the substrate P by the projection units PLU. In this embodiment, each of the first row of exposure module groups MU(A), the second row of exposure module groups MU(B), and the third row of exposure module groups MU(C), which are spaced apart in the X-axis direction, consists of nine modules arranged in the Y-axis direction. Exposure module group MU(A) consists of nine exposure modules MU1 to MU9 arranged in the +Y direction, exposure module group MU(B) consists of nine exposure modules MU10 to MU18 arranged in the -Y direction, and exposure module group MU(C) consists of nine exposure modules MU19 to MU27 arranged in the +Y direction. Exposure modules MU1 to MU27 all have the same configuration, and when exposure module group MU(A) and exposure module group MU(B) are facing each other with respect to the X-axis direction, exposure module group MU(B) and exposure module group MU(C) are back-to-back with respect to the X-axis direction. It is possible to have only one row of module groups from exposure module groups MU(A), MU(B), and MU(C), and not the other two rows.

[0162] In Figure 25, the shape of the projection regions IA1, IA2, IA3, ..., IA27 (sometimes represented as IAn, where n is 1 to 27) created by each of the exposure modules MU1 to MU27 is, as an example, a rectangle extending in the Y-axis direction with an aspect ratio of approximately 1:2. In this embodiment, as the substrate P is scanned in the +X direction, sequential exposure is performed at the -Y direction ends of each of the projection regions IA1 to IA9 in the first row and at the +Y direction ends of each of the projection regions IA10 to IA18 in the second row. Then, the areas on the substrate P that were not exposed by each of the projection regions IA1 to IA18 in the first and second rows are sequentially exposed by each of the projection regions IA19 to IA27 in the third row. The center points of each projection region IA1 to IA9 in the first row are located on line k1 parallel to the Y-axis, the center points of each projection region IA10 to IA18 in the second row are located on line k2 parallel to the Y-axis, and the center points of each projection region IA19 to IA27 in the third row are located on line k3 parallel to the Y-axis. The distance between line k1 and line k2 in the X-axis direction is set to distance XL1, and the distance between line k2 and line k3 in the X-axis direction is set to distance XL2.

[0163] Here, let OLa be the joint between the -Y end of projection region IA9 and the +Y end of projection region IA10, OLb be the joint between the -Y end of projection region IA10 and the +Y end of projection region IA27, and OLc be the joint between the +Y end of projection region IA8 and the -Y end of projection region IA27. The state of this joint exposure is explained in Figure 26. In Figure 26, the Cartesian coordinate system XYZ is set to be the same as in Figures 24 and 25, and the coordinate system X'Y' within projection regions IA8, IA9, IA10, IA27 (and all other projection regions IAn) is set to be tilted by an angle θk (0° < θk < 90°) with respect to the X and Y axes (lines k1 to k3) of the Cartesian coordinate system XYZ. In other words, the areas on the substrate P onto which the illumination light reflected by the numerous micromirrors of the DMD200 is projected (light irradiation areas) are arranged in two dimensions along the X' and Y' axes.

[0164] In Figure 26, the circular regions encompassing each of the projection regions IA8, IA9, IA10, IA27 (and all other projection regions IAn) represent the circular image field PLf' of the projection unit PLU. At the joint OLa, the projection images (light-illuminated regions) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection region IA9 are set to overlap with the projection images (light-illuminated regions) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection region IA10. Similarly, at the joint OLb, the projection images (light-illuminated regions) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection region IA10 are set to overlap with the projection images (light-illuminated regions) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection region IA27. Similarly, in the joint OLc, the projection image (light-illuminated area) of the micromirrors arranged diagonally (angle θk) at the +Y' end of projection area IA8 and the projection image (light-illuminated area) of the micromirrors arranged diagonally (angle θk) at the -Y' end of projection area IA27 are set to overlap. Also, when the exposure module group is in a single row, joints OLa, OLb, and OLc may all be exposed in projection area IA8 (or projection area IA9). The joint in the fifth embodiment corresponds to the overlapping area in the first to fourth embodiments.

[0165] [Configuration of the Lighting Unit] Figure 27 is an optical arrangement diagram of the specific configuration of exposure module MU18 in exposure module group MU(B) and exposure module MU19 in exposure module group MU(C) as seen in the XZ plane, as shown in Figures 24 and 25. The orthogonal coordinate system XYZ in Figure 27 is set to the same as the orthogonal coordinate system XYZ in Figures 24 to 26. Also, as is clear from the arrangement of each exposure module in the XY plane shown in Figure 25, exposure module MU18 is offset from exposure module MU19 by a certain distance in the +Y direction and is installed back to back. Since each optical component in exposure module MU18 and each optical component in exposure module MU19 are made of the same material and are constructed in the same way, the optical configuration of exposure module MU18 will be described in detail here. The optical fiber unit FBU shown in Figure 24 is composed of 27 optical fiber bundles FB1 to FB27, each corresponding to one of the 27 exposure modules MU1 to MU27 shown in Figure 25.

[0166] The illumination unit ILU of the exposure module MU18 includes a mirror 300 that reflects illumination light ILm traveling in the -Z direction from the exit end of the optical fiber bundle FB18, a mirror 302 that reflects the illumination light ILm from mirror 300 in the -Z direction, an input lens system 304 that acts as a collimator lens, an illuminance adjustment filter 306, an optical integrator 308 including a micro-fly-eye (MFE) lens and a field lens, a condenser lens system 310, and an inclined mirror 312 that reflects the illumination light ILm from the condenser lens system 310 toward the DMD200. The mirrors 302, input lens system 304, optical integrator 308, condenser lens system 310, and inclined mirror 312 are arranged along the optical axis AXc parallel to the Z axis.

[0167] The optical fiber bundle FB18 is composed of one optical fiber or multiple optical fiber bundles. The illumination light ILm emitted from the exit end of the optical fiber bundle FB18 (each optical fiber) is set to a numerical aperture (NA, also called divergence angle) such that it is incident without being vetoed by the subsequent input lens system 304. Here, the illumination light ILm is light having a peak wavelength within the wavelength range of 10 nm or more and 410 nm or less, and the peak wavelength is, for example, one of 193 nm, 248 nm, 355 nm, 365 nm (i-line), 405 nm (h-line), and 436 nm (g-line).

[0168] The front focal point of the input lens system 304 is set in the design to be the same as the exit end of the optical fiber bundle FB18. Furthermore, the rear focal point of the input lens system 304 is set to superimpose the illumination light ILm from one or more point sources formed at the exit end of the optical fiber bundle FB18 onto the incident surface side of the MFE lens 308A of the optical integrator 308. Therefore, the incident surface of the MFE lens 308A is illuminated by the illumination light ILm from the exit end of the optical fiber bundle FB18. In the initial state, the geometric center point of the exit end of the optical fiber bundle FB18 in the XY plane is located on the optical axis AXc, and the principal ray (center line) of the illumination light ILm from the point source at the exit end of the optical fiber is parallel (or coaxial) with the optical axis AXc.

[0169] The illumination light ILm from the input lens system 304 is attenuated by the illuminance adjustment filter 306 to an arbitrary value in the range of 0% to 90%, and then passes through the optical integrator 308 (MFE lens 308A, variable aperture diaphragm 308B, field lens, etc.) before entering the condenser lens system 310. The MFE lens 308A is made up of a large number of rectangular microlenses with a square area of ​​several tens of micrometers arranged in two dimensions, and its overall shape is set to be approximately similar to the overall shape of the mirror surface of the DMD 200 (aspect ratio of approximately 1:2) in the XY plane. In addition, the position of the front focal point of the condenser lens system 310 is set to be approximately the same as the position of the exit surface of the MFE lens 308A. A variable aperture diaphragm (σ value adjustment diaphragm) 308B is provided on the exit surface side of the MFE lens 308A. Therefore, the illumination light from the point light sources formed on each of the numerous microlenses of the MFE lens 308A that passes through the circular aperture of the variable aperture diaphragm 308B is converted into a nearly parallel beam by the condenser lens system 310, reflected by the inclined mirror 312, and then superimposed on the DMD 200 to create a uniform illuminance distribution. Since a surface light source is generated on the exit surface of the MFE lens 308A, in which numerous point light sources (focusing points) are densely arranged in two dimensions, it functions as a surface light source component. In addition, the variable aperture diaphragm 308B has the function of defining the shape of the surface light source formed on the exit surface.

[0170] In the exposure module MU18 shown in Figure 27, the optical axis AXc, which is parallel to the Z-axis and passes through the condenser lens system 310, is bent by the inclined mirror 312 to reach the DMD200, and the optical axis between the inclined mirror 312 and the DMD200 is defined as the optical axis AXb. In this embodiment, the neutral plane containing the center points of each of the numerous micromirrors of the DMD200 is assumed to be set parallel to the XY plane. Therefore, the angle between the normal of that neutral plane (parallel to the Z-axis) and the optical axis AXb becomes the angle of incidence θα of the illumination light ILm to the DMD200.

[0171] The DMD 200 is mounted on a fine-adjustment stage 200S provided on a mount portion 200M fixed to the support column of the lighting unit ILU. As the fine-adjustment stage 200S, for example, a fine-adjustment stage combining a parallel link mechanism and an extendable piezoelectric element, as disclosed in International Publication No. 2006 / 120927, can be used. This allows for fine adjustment of the position and orientation (angle) of the DMD 200.

[0172] [DMD Configuration] Next, the configuration of the DMD 200 will be described with reference to Figures 28(A) to 28(D). Figure 28(A) is a plan view showing the arrangement of multiple micromirrors Ms in the DMD 200 according to this embodiment, Figure 28(B) shows the DMD 200 when the power is OFF, Figure 28(C) is a diagram for explaining the ON state of the micromirrors, and Figure 28(D) is a diagram for explaining the OFF state of the micromirrors. Note that in Figure 28(C), the ON state of the micromirrors is indicated by hatching.

[0173] As shown in Figure 28(A), the DMD200 has a plurality of micromirrors Ms whose tilt angle can be changed. In this embodiment, the DMD200 is a roll and pitch drive system that switches between an on state and an off state by tilting the micromirrors Ms in the roll direction and the pitch direction.

[0174] The micromirror Ms of the DMD200 according to this embodiment has a substantially square shape and can rotate and tilt around axes parallel to the diagonals (around the α axis and the β axis). In this embodiment, the rotation of the micromirror Ms around axes parallel to the diagonals (around the α axis and the β axis) is equivalent to the tilt direction of the micromirror Ms being 45°.

[0175] In the following explanation, the angle that the reflective surface of a micromirror Ms rotated around the β axis makes with the plane on which the micromirrors Ms are arranged (the X'Y' plane) is defined as the inclination angle θβ of the micromirror Ms around the β axis.

[0176] As shown in Figure 28(B), when the power is off (the micromirrors Ms are in a neutral state), the reflective surfaces of each micromirror Ms are set parallel to the X'Y' plane. Let Pdx (μm) be the arrangement pitch in the X' axis direction and Pdy (μm) be the arrangement pitch in the Y' axis direction of each micromirror Ms, but in practice, Pdx = Pdy is set.

[0177] Each micromirror Ms is turned on by tilting around the β axis. Figure 28(C) shows the case where the micromirrors Ms are turned on. Illumination light reflected by the turned-on micromirrors Ms is incident on the projection unit PLU.

[0178] Furthermore, each micromirror Ms is turned off by tilting around the α-axis. Figure 28(D) shows the case where the micromirrors Ms are in the off state. Illumination light reflected by the off micromirrors Ms is directed away from the projection unit PLU and absorbed by a light absorber (not shown).

[0179] The DMD200 generates an exposure pattern by switching the on and off states of each micromirror Ms. In projection exposure using the DMD200, each of the numerous micromirrors Ms is rapidly switched between an on-state tilt and an off-state tilt based on pattern data (drawing data), while the substrate P is scanned and moved in the X direction at a speed corresponding to the switching speed to perform pattern exposure.

[0180] Returning to Figure 27, the illumination light ILm irradiated onto the ON-state micromirror Ms of the DMD200 is reflected toward the projection unit PLU. In other words, the illumination light ILm irradiated onto the ON-state micromirror Ms is incident on the projection unit PLU.

[0181] On the other hand, illumination light ILm directed at the off-state micromirrors Ms of the DMD200 is reflected so as not to be directed towards the projection unit PLU. In other words, illumination light ILm directed at the off-state micromirrors Ms of the DMD200 is directed away from the projection unit PLU.

[0182] As shown in Figure 27, a movable shutter 314 is detachably provided in the optical path between the DMD 200 and the projection unit PLU to block reflected light from the DMD 200 during non-exposure periods. The movable shutter 314 is rotated to an angle position that retracts from the optical path during exposure periods, as shown on the exposure module MU 19 side, and rotated to an angle position that is diagonally inserted into the optical path during non-exposure periods, as shown on the exposure module MU 18 side. A reflective surface is formed on the DMD 200 side of the movable shutter 314, and the light from the DMD 200 reflected there is irradiated onto the light absorber 315. The light absorber 315 absorbs light energy in the ultraviolet wavelength range (wavelengths of 400 nm or less) without re-reflecting it and converts it into thermal energy. For this reason, the light absorber 315 is also provided with a heat dissipation mechanism (heat dissipation fins or cooling mechanism). Although not shown in Figure 27, the reflected light from the micromirror Ms of the DMD200, which is in the off state during the exposure period, is absorbed by a similar light absorber (not shown in Figure 27) installed in the Y-axis direction (a direction perpendicular to the plane of the paper in Figure 27) relative to the optical path between the DMD200 and the projection unit PLU, as described above.

[0183] [Configuration of the projection unit] The projection unit PLU, mounted on the underside of the optical base plate 5, is configured as a bilateral telecentric imaging projection lens system consisting of a first lens system 316 and a second lens system 318 arranged along the optical axis AXa parallel to the Z axis. The first lens system 316 and the second lens system 318 are each configured to be translated by a micro-movement actuator in the direction along the Z axis (optical axis AXa) relative to a support column fixed to the underside of the optical base plate 5. The projection magnification Mp of the imaging projection lens system by the first lens system 316 and the second lens system 318 is determined by the relationship between the arrangement pitch Pdx and Pdy of the micromirrors on the DMD 200 and the minimum line width (minimum pixel dimension) Pg of the pattern projected within the projection area IAn (n=1 to 27) on the substrate P.

[0184] For example, if the required minimum line width (minimum pixel dimension) Pg is 1 μm, and the micromirror array pitches Pdx and Pdy are 5.4 μm each, then, taking into account the inclination angle θk of the projection region IAn (DMD200) in the XY plane as explained in Figure 26 above, the projection magnification Mp is set to approximately 1 / 6. The image projection lens system, consisting of lens systems 316 and 318, inverts / reverses the reduced image of the entire mirror surface of the DMD200 and projects it onto the projection region IA18 (IAn) on the substrate P.

[0185] The first lens system 316 of the projection unit PLU is movable in the direction of the optical axis AXa by an actuator to fine-tune the projection magnification Mp (by approximately ± tens of ppm), and the second lens system 318 is movable in the direction of the optical axis AXa by an actuator to fine-tune the focus at high speed. Furthermore, multiple obliquely incident light type focus sensors 320 are provided on the underside of the optical base plate 5 in order to measure the position change of the substrate P surface in the Z-axis direction with sub-micron accuracy. The multiple focus sensors 320 measure the overall position change of the substrate P in the Z-axis direction, the position change of a partial region on the substrate P corresponding to each of the projection regions IAn (n = 1 to 27) in the Z-axis direction, or the partial tilt change of the substrate P.

[0186] As explained in Figure 26 above, the illumination unit ILU and projection unit PLU are arranged such that the projection area IAn is tilted by an angle θk in the XY plane. Therefore, the DMD200 and the illumination unit ILU (at least the optical path portion of mirrors 302 to 112 along the optical axis AXc) in Figure 27 are arranged so that they are tilted by an angle θk in the XY plane as a whole.

[0187] [Configuration of the exposure control device] Various processes, including scanning exposure processing, performed in the exposure apparatus 10D having the above configuration are controlled by the exposure control device 400. Figure 29 is a functional block diagram showing the functional configuration of the exposure control device 400 provided in the exposure apparatus 10D according to this embodiment. The exposure control device 400 comprises a drawing data generation unit 409, a drawing data storage unit 410, a drive control unit 404, and an exposure control unit 406.

[0188] The drawing data generation unit 409 generates drawing data for patterns to be exposed by each of the multiple exposure modules MUn (n=1 to 27). As will be described in detail later, the patterns include circuit patterns for electronic devices or device patterns for display devices, and patterns for measurement marks.

[0189] The drawing data storage unit 410 stores the drawing data of multiple exposure modules MUn (n=1 to 27) generated by the drawing data generation unit 409. The drawing data storage unit 410 sends the drawing data MD1 to MD27 for pattern exposure to each of the DMD 200s of the 27 exposure modules MU1 to MU27 shown in Figure 25. The exposure modules MUn (n=1 to 27) selectively drive the micromirrors Ms of the DMD 200 based on the drawing data MDn to project and expose the pattern corresponding to the drawing data MDn onto the substrate P.

[0190] The drive control unit 404 creates control data CD1 to CD27 based on the measurement results of the interferometer IFX and sends them to the exposure modules MU1 to MU27. The drive control unit 404 also scans the XY stage 4A in the scanning direction (X-axis direction) at a predetermined speed based on the measurement results of the interferometer IFX.

[0191] During scanning exposure, exposure modules MU1 to MU27 control the drive of the micromirrors Ms of the DMD200 based on drawing data MD1 to MD27 and control data CD1 to CD27 sent from the drive control unit 404.

[0192] The exposure control unit (sequencer) 406 controls the transmission of drawing data MD1 to MD27 from the drawing data storage unit 410 to the exposure modules MU1 to MU27, and the transmission of control data CD1 to CD27 from the drive control unit 404, in synchronization with the scanning exposure (movement position) of the substrate P.

[0193] Figure 30 shows a pattern formed on the substrate P by controlling the drive of the micromirror Ms of the DMD 200 based on drawing data generated by the drawing data generation unit 409. As described above, the pattern formed on the substrate P includes a circuit pattern for an electronic device or a device pattern for a display device, and a pattern of measurement marks.

[0194] The drawing data generation unit 409 generates drawing data such that a circuit pattern for an electronic device or a device pattern for a display device is formed in region DPFR1 of the substrate P, and a pattern MP1 of measurement marks is formed in at least one of the regions MPFR1 on both sides of region DPFR1 in the scanning direction.

[0195] For example, as shown in Figure 30, the drawing data generation unit 409 generates drawing data such that at least one pattern MP1 of measurement marks is formed at each of the following joints: OLa between the -Y end of projection region IA9 and the +Y end of projection region IA10, OLb between the -Y end of projection region IA10 and the +Y end of projection region IA27, OLc between the +Y end of projection region IA8 and the -Y end of projection region IA27, OLD between the -Y end of projection region IA8 and the +Y end of projection region IA11, OLe between the -Y end of projection region IA11 and the +Y end of projection region IA26, and OLf between the +Y end of projection region IA7 and the -Y end of projection region IA26.

[0196] For example, the drawing data generation unit 409 generates drawing data for the exposure module MU9 so that at the joint OLa, the pattern of the measurement mark is exposed by exposure light (spot light) from multiple micromirrors Ms provided by the DMD200 of the exposure module MU9. The drawing data generation unit 409 also generates drawing data for the exposure module MU10 so that at the joint OLa, the pattern of the measurement mark is exposed by exposure light (spot light) from multiple micromirrors Ms provided by the DMD200 of the exposure module MU10, and at the joint OLb, the pattern of the measurement mark is exposed by exposure light (spot light) from multiple micromirrors Ms provided by the DMD200 of the exposure module MU10. Furthermore, the drawing data generation unit 409 generates drawing data for the exposure module MU27 such that, at the joint OLb, the pattern of the measurement mark is exposed by exposure light (spot light) from multiple micromirrors Ms provided by the DMD200 of the exposure module MU27, and at the joint OLc, the pattern of the measurement mark is exposed by exposure light (spot light) from multiple micromirrors Ms provided by the DMD200 of the exposure module MU27.

[0197] In other words, the drawing data generation unit 409 generates drawing data for the exposure module MU9 such that the pattern of the measurement marks is exposed to the joint OLa by irradiating the joint OLa with exposure light from the DMD 200 of the exposure module MU9, which includes a plurality of micromirrors Ms controlled based on drawing data including the pattern of the measurement marks. The drawing data generation unit 409 also generates drawing data for the exposure module MU10 such that the pattern of the measurement marks is exposed to the joint OLa by irradiating the joint OLa with exposure light from the DMD 200 of the exposure module MU10, which includes a plurality of micromirrors Ms controlled based on drawing data including the pattern of the measurement marks, and the pattern of the measurement marks is exposed to the joint OLb by irradiating the joint OLb with exposure light from the DMD 200 of the exposure module MU10, which includes a plurality of micromirrors Ms controlled based on drawing data including the pattern of the measurement marks. Furthermore, the drawing data generation unit 409 generates drawing data for the exposure module MU27 such that the pattern of the measurement marks is exposed to the joint OLb by irradiating the joint OLb with exposure light from the DMD200 of the exposure module MU27, which includes a plurality of micromirrors Ms controlled based on drawing data including the pattern of the measurement marks, and the pattern of the measurement marks is exposed to the joint OLc by irradiating the joint OLc with exposure light from the DMD200 of the exposure module MU27, which includes a plurality of micromirrors Ms controlled based on drawing data including the pattern of the measurement marks.

[0198] Furthermore, the drawing data generation unit 409 generates drawing data such that at least one pattern of measurement marks is formed in each of the non-jointed portions NL9 of projection region IA9, NL10 of projection region IA10, NL27 of projection region IA27, NL8 of projection region IA8, NL11 of projection region IA11, and NL26 of projection region IA26.

[0199] In scanning exposure processing, at the joint where light (exposure light) from two DMD200s is irradiated, exposure light from one DMD200 is irradiated onto the resist layer, and exposure light from the other DMD200 is irradiated onto the resist layer so that the entire measurement mark is formed by combining the exposure light from the first DMD200 with the pattern of the measurement mark exposed on the resist layer by the exposure light from the first DMD200. Furthermore, the exposure apparatus 10D is controlled so that the exposure amount of the resist layer in the area irradiated by the exposure light from one DMD200 is less than the exposure amount that changes the solubility of the resist layer, the exposure amount of the resist layer in the area irradiated by the exposure light from the other DMD200 is less than the exposure amount that changes the solubility of the resist layer, and the exposure amount (cumulative exposure amount) of the resist layer in the area where the areas irradiated by the exposure light from one DMD200 and the area irradiated by the exposure light from the other DMD200 overlap is greater than or equal to the exposure amount that changes the solubility of the resist layer.

[0200] When scanning exposure is completed, a measurement mark pattern MP1 is formed in region MPFR1 on the substrate P, and a circuit pattern for an electronic device or a device pattern for a display device is formed in region DPFR1.

[0201] The measurement mark pattern MP1 formed in region MPFR1 may be any of the measurement mark patterns according to the first to fourth embodiments and their modified forms. That is, any of the measurement mark patterns shown in Figures 7(A), 11, 12(A), 13(A), 15, 16, 18, and 20 may be formed in region MPFR1. The measurement marks shown in Figures 7(A), 11, 12(A), 13(A), 15, 16, 18, and 20 have a pattern that extends in the X direction and whose width in the Y direction intersecting the X direction varies, including widths W1 and W2. The width W1 is the width to which a resist image is formed on the resist layer when, for example, there is a Y-direction displacement between the position of an irradiation area on the resist layer that is irradiated by exposure light from the DMD 200 of an exposure module MU9, which includes a plurality of micromirrors Ms controlled based on drawing data including a pattern of measurement marks, and the position of an irradiation area on the resist layer that is irradiated by exposure light from the DMD 200 of an exposure module MU10, which includes a plurality of micromirrors Ms controlled based on drawing data including a pattern of measurement marks, so as to overlap the said irradiation area, due to the irradiation of exposure light from the DMD 200 of the exposure module MU9 and the irradiation of exposure light from the exposure module MU10. Furthermore, the width W2 is the width such that, when there is a Y-direction displacement between the position of the irradiation area irradiated by exposure light from the DMD200 of the exposure module MU9 and the position of the irradiation area irradiated by exposure light from the DMD200 of the exposure module MU10, a resist image is not formed on the resist layer due to the irradiation of exposure light from the DMD200 of the exposure module MU9 and the irradiation of exposure light from the DMD200 of the exposure module MU10.

[0202] Thus, even in the case of the exposure apparatus 10D using the DMD200, by measuring the pattern of measurement marks formed at the joint of the projection area of ​​the exposure module, it is possible to detect, for example, the difference between the position of the projection area IA9 of the exposure module MU9 and the position of the projection area IA10 of the exposure module MU10.

[0203] The embodiments described above are preferred examples of the present invention. However, the invention is not limited thereto, and various modifications are possible without departing from the spirit of the invention.

[0204] 10, 10A, 10D Exposure apparatus 100, 100a to 100g Projection optics unit MSK1, MSK2 Mask MRK1, MRK11, MRK12, MRK21, MRK22, MRK31, MRK32 Measurement marks Oa to Of, Ox Overlap region OLa to OLf Joint P Substrate PTN1, PTN2, PTN3, PTN4 Pattern PTN11, PTN12 Pattern PTN31 Pattern RI1, RI2, RI3, RI4, RI5, RI6, RI31, RI41 Resist image

Claims

1. A mask used when performing overexposure on at least a portion of a substrate having a resist layer, comprising a mark to be transferred to the resist layer, wherein the mark has a first pattern that extends in a first direction and whose width in a second direction intersecting the first direction varies, including widths W1 and W2, the width W1 being the width over which a resist image is formed on the resist layer by the first exposure light and the second exposure light when there is a displacement in the second direction between the position of a first irradiation region on the resist layer to which a first exposure light patterned by the mark is irradiated and the position of a second irradiation region to which a second exposure light patterned by the mark is irradiated so as to overlap the first irradiation region, and the width W2 being the width over which a resist image is not formed on the resist layer by the first exposure light and the second exposure light when there is a displacement in the second direction between the position of the first irradiation region and the position of the second irradiation region.

2. A mask having marks for measuring the displacement between the position of a first exposure region exposed by a first exposure light and the position of a second exposure region that overlaps with a part of the first exposure region and is exposed by a second exposure light, on a substrate having a resist layer, wherein the marks have a first pattern that extends in a first direction and whose width in a second direction intersecting the first direction varies, including widths W1 and W2, the width W1 being the width over which a resist image is formed on the resist layer by the first exposure light and the second exposure light when there is a displacement in the second direction between the position of a first irradiation region on the resist layer that is irradiated with the first exposure light patterned by the marks and the position of a second irradiation region that is irradiated with the second exposure light patterned by the marks so as to overlap the first irradiation region, and the width W2 being the width over which a resist image is not formed on the resist layer by the first exposure light and the second exposure light when there is a displacement in the second direction between the position of the first irradiation region and the position of the second irradiation region.

3. The mask according to claim 2, wherein the mark is positioned at a location corresponding to the next region.

4. The mask according to any one of claims 1 to 3, wherein the first exposure light is irradiated onto the resist layer via a first projection optical system, and the second exposure light is irradiated onto the resist layer via a second projection optical system different from the first projection optical system.

5. The mask according to any one of claims 1 to 3, wherein the first exposure light and the second exposure light are irradiated onto the resist layer at different timings via the same projection optical system.

6. The mask according to any one of claims 1 to 5, wherein the first pattern is a pattern in which the width in the second direction decreases from one end in the first direction toward the other end, or a pattern in which the width in the second direction decreases from the center in the first direction toward each of the two ends.

7. The mask according to any one of claims 1 to 6, wherein the mark includes a second pattern obtained by tilting the first pattern at a first angle with respect to the first direction.

8. The mask according to claim 7, wherein the mark includes a third pattern obtained by tilting the first pattern at a second angle different from the first angle with respect to the first direction.

9. The mask according to claim 8, wherein the mark includes a fourth pattern obtained by tilting the first pattern by a third angle different from the first and second angles with respect to the first direction.

10. The mask according to claim 9, wherein the first pattern is arranged in multiples at first intervals in the second direction, the second pattern is arranged in multiples at second intervals in a direction intersecting the first angularly inclined direction with respect to the first direction, the third pattern is arranged at third intervals in a direction intersecting the second angularly inclined direction with respect to the first direction, and the fourth pattern is arranged in multiples at fourth intervals in a direction intersecting the third angularly inclined direction with respect to the first direction.

11. The mask according to claim 9, wherein the first pattern is a pattern in which the width in the second direction decreases from the center in the first direction toward each of the ends, the first pattern and the second pattern intersect in the center, and the third pattern and the fourth pattern intersect in the center.

12. The mask according to claim 9, wherein the first pattern is a pattern in which the width in the second direction decreases from the center in the first direction toward each of the ends, and the first pattern, the second pattern, the third pattern, and the fourth pattern intersect in the center.

13. The mask according to claim 9, wherein the first pattern is a pattern in which the width in the second direction decreases from one end in the first direction to the other end, the first pattern, the second pattern, the third pattern, and the fourth pattern are arranged radially, and the first direction, the first angularly inclined direction with respect to the first direction, the second angularly inclined direction with respect to the first direction, and the third angularly inclined direction with respect to the first direction are not orthogonal to each other.

14. The mask according to claim 8 or 9, wherein the first pattern is a pattern in which the width in the second direction decreases from one end in the first direction to the other end, the first pattern, the second pattern and the third pattern are arranged radially, and the first direction, the direction with a first angular inclination with respect to the first direction and the direction with a second angular inclination with respect to the first direction are not orthogonal to each other.

15. The mask according to any one of claims 1 to 14, comprising: a first region on which the mark is formed; and a second region on which a circuit pattern for an electronic device or a device pattern for a display device is formed.

16. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light and the position of a second exposure region exposed by a second exposure light, which has an adjacent region overlapping with a part of the first exposure region, using a mask according to any one of claims 1 to 15, the method comprising: irradiating the resist layer with the first exposure light patterned by the marks; irradiating the first exposure region with the second exposure light patterned by the marks superimposed on the first irradiation region irradiated with the first exposure light; measuring the length in the first direction of the resist image of the first pattern formed by the first exposure light and the second exposure light; and determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the resist image of the first pattern.

17. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light and the position of a second exposure region exposed by a second exposure light, which has an adjacent region overlapping with a part of the first exposure region, using a mask according to any one of claims 7 to 12, the method comprising: irradiating the resist layer with the first exposure light patterned by the marks; irradiating the first exposure region with the second exposure light patterned by the marks superimposed on the first irradiation region irradiated with the first exposure light; measuring the length in the first direction of the first pattern of resist image formed by the first exposure light and the second exposure light; and determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the first pattern of resist image. A measurement method comprising: measuring the length in the second direction of the resist image of the second pattern formed by the first exposure light and the second exposure light; and determining the amount of displacement between the position of the first exposure region and the position of the second exposure region in a direction intersecting the first angularly inclined direction from the first direction.

18. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light and the position of a second exposure region exposed by a second exposure light, which has an adjacent region overlapping with a part of the first exposure region, using a mask according to any one of claims 9 to 12, the method comprising: irradiating the resist layer with the first exposure light patterned by the marks; irradiating the first exposure region with the second exposure light patterned by the marks superimposed on the first irradiation region irradiated with the first exposure light; measuring the length in the first direction of the first pattern of resist image formed by the first exposure light and the second exposure light; the length in the direction inclined at a second angle with respect to the first direction of the third pattern of resist image formed by the first exposure light and the second exposure light; and the length in the direction inclined at a third angle with respect to the first direction of the fourth pattern of resist image formed by the first exposure light and the second exposure light.

19. The measurement method according to claim 18, comprising determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the first pattern of resist image obtained by the first exposure light and the second exposure light, the length in the second angularly inclined direction with respect to the first direction of the third pattern of resist image obtained by the first exposure light and the second exposure light, and the length in the third angularly inclined direction with respect to the first direction of the fourth pattern of resist image obtained by the first exposure light and the second exposure light.

20. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light on a substrate having a resist layer, and the position of a second exposure region having an adjacent region overlapping with a part of the first exposure region and being exposed by a second exposure light, using a mask according to any one of claims 9 to 12, comprising: irradiating the resist layer with the first exposure light patterned by the mark; and irradiating the first exposure region, which has been irradiated with the first exposure light, with the second exposure light patterned by the mark, superimposed on the first irradiation region that has been irradiated with the first exposure light. A measurement method comprising measuring the length in the first direction of the first pattern of resist image obtained by the first exposure light and the second exposure light, the length in the direction with respect to the first angular inclination of the first direction of the second pattern of resist image obtained by the first exposure light and the second exposure light, the length in the direction with respect to the first angular inclination of the first direction of the third pattern of resist image obtained by the first exposure light and the second exposure light, and the length in the direction with respect to the first angular inclination of the first direction of the fourth pattern of resist image obtained by the first exposure light and the second exposure light.

21. Determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the first pattern resist image obtained by the first exposure light and the second exposure light, the length in the second angularly inclined direction with respect to the first direction of the third pattern resist image obtained by the first exposure light and the second exposure light, and the length in the third angularly inclined direction with respect to the first direction of the fourth pattern resist image obtained by the first exposure light and the second exposure light; and determining the amount of displacement in the first angularly inclined direction with respect to the first direction between the position of the first exposure region and the position of the second exposure region based on the length in the first angularly inclined direction with respect to the first direction of the second pattern resist image obtained by the first exposure light and the second exposure light, The measurement method according to claim 20, including the following:

22. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light and the position of a second exposure region exposed by a second exposure light, which has an adjacent region overlapping with a part of the first exposure region, using a mask according to any one of claims 11 to 14, the measurement method comprising: obtaining elliptic parameters by elliptic fitting the resist image of the mark with the first exposure light and the second exposure light; and determining the amount of displacement between the position of the first exposure region and the position of the second exposure region, and the direction of the positional displacement, based on the elliptic parameters.

23. The measurement method according to claim 22, wherein the determination involves determining the direction of the positional displacement based on the major axis of the ellipse and determining the amount of displacement based on the ellipticity.

24. The measurement method according to any one of claims 16 to 23, wherein the first exposure light is irradiated onto the resist layer via a first projection optical system, and the second exposure light is irradiated onto the resist layer via a second projection optical system different from the first projection optical system.

25. The measurement method according to any one of claims 16 to 23, wherein the first exposure light and the second exposure light are irradiated onto the resist layer at different timings via the same projection optical system.

26. An exposure method comprising: irradiating a resist layer with a first exposure light through a mask according to any one of claims 1 to 15; irradiating a resist layer with a second exposure light through the mask; measuring the length in the first direction of the resist image of the first pattern formed by the first exposure light and the second exposure light; and adjusting the position of at least one of the first exposure region exposed by the first exposure light or the second exposure region exposed by the second exposure light based on the results of the measurement.

27. The exposure method according to claim 26, wherein the first exposure light is irradiated onto the resist layer via a first projection optical system, and the second exposure light is irradiated onto the resist layer via a second projection optical system different from the first projection optical system.

28. The exposure method according to claim 26, wherein the first exposure light and the second exposure light are irradiated onto the resist layer at different timings via the same projection optical system.

29. The method includes: irradiating a resist layer with first exposure light from a first spatial light modulator including a plurality of optical modulation elements controlled based on drawing data including a pattern of marks; and irradiating the resist layer with second exposure light from a second spatial light modulator including a plurality of optical modulation elements controlled based on drawing data including a pattern of marks, superimposed on a first irradiation region irradiated with the first exposure light, wherein the marks have a first pattern that extends in a first direction on the resist layer and whose width in a second direction intersecting the first direction varies, including widths W1 and W2, and width W1 is the width to which a resist image is formed on the resist layer by irradiation with the first exposure light and irradiation with the second exposure light when there is a displacement in the second direction between the position of the first irradiation region and the position of the second irradiation region irradiated with the second exposure light on the resist layer. An exposure method wherein the width W2 is such that, when there is a displacement in the second direction between the position of the first irradiation region and the position of the second irradiation region, a resist image is not formed on the resist layer due to irradiation with the first exposure light and irradiation with the second exposure light.

30. A measurement method for measuring the displacement between the position of a first exposure region exposed by a first exposure light from a first spatial light modulator on a substrate having a resist layer, and the position of a second exposure region having a joint region that overlaps with a part of the first exposure region and is exposed by a second exposure light from a second spatial light modulator, the measurement method comprising: forming a resist image of the mark on the resist layer by the exposure method described in claim 29; measuring the length in the first direction of the resist image of the first pattern due to irradiation with the first exposure light and irradiation with the second exposure light; and determining the amount of displacement in the second direction between the position of the first exposure region and the position of the second exposure region based on the length in the first direction of the resist image of the first pattern.

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