Composition for semiconductor processing and processing method

Abstract

The present invention provides: a composition for semiconductor processing, which is capable of maintaining good processing characteristics even after storage for a specific period of time by improving storage stability, and with which it is possible to improve the yield of semiconductor element manufacturing; and a processing method which uses the same.　A composition for semiconductor processing according to the present invention contains (A) a compound represented by general formula (1), (B) a compound represented by general formula (2), and (D) a liquid medium. If MA (mass%) is the content of the component (A) and MB (mass%) is the content of the component (B), MA / MB is 1.0 × 103 to 1.0 × 106.　(1): R1OR2OH (2): HCOOH (In the formula (1), R1 represents a monovalent organic group, and R2 represents a divalent organic group.)

Description

Composition for semiconductor processing and processing method

[0001] The present invention relates to a composition for semiconductor processing and a processing method using the same.

[0002] Semiconductor devices are manufactured by forming a fine electronic circuit pattern on a substrate using photolithography technology. For example, a resist film is formed on a laminate including a metal layer serving as a wiring material, an etching stop layer, an interlayer insulating film, etc. on a substrate, and a photolithography process of exposing the resist film in a pattern and then developing it to form a pattern, and a dry etching process combining plasma etching and plasma ashing are performed to manufacture a semiconductor device. After the photolithography process, it is necessary to remove the resist film formed on the laminate. Also, after the dry etching process, it is necessary to remove the residue adhering after the process.

[0003] As a technique for removing the resist film after the photolithography process, a method using a composition mainly composed of an organic solvent has been proposed (for example, see Patent Document 1). Also, as a technique for removing the residue after the dry etching process, a method using a cleaning composition containing hydroxylamine has been proposed (for example, see Patent Document 2).

[0004] JP-A-2007-328338 JP-A-2012-033774

[0005] In order to efficiently remove the resist film and residue in such a method, it is common to heat the composition to 50°C to 65°C and use it immediately before use. On the other hand, in commercial production, these compositions are often stored near room temperature. However, generally, semiconductor processing compositions contain a plurality of chemical substances with different properties, and the components contained in the semiconductor processing composition are likely to deteriorate, such as reacting due to heating or long-term storage. Therefore, it is difficult to maintain the processing characteristics of the semiconductor processing composition, and it was necessary to further improve the storage stability of the semiconductor processing composition in order to improve the yield of semiconductor device manufacturing.

[0006] Some aspects of the present invention solve at least part of the above problems, improve storage stability, maintain good processing characteristics even after storage for a predetermined period, and thereby provide a semiconductor processing composition capable of improving the yield of semiconductor element manufacturing and a processing method using the same.

[0007] The present invention is made to solve at least part of the above problems and can be realized as any of the following aspects.

[0008] One aspect of the semiconductor processing composition according to the present invention contains: (A) a compound represented by the following general formula (1); (B) a compound represented by the following general formula (2); and (D) a liquid medium. When the content of the component (A) is M Ａ [mass%] and the content of the component (B) is M Ｂ [mass%], M Ａ / M Ｂ = 1.0 × 10 ３ to 1.0 × 10 ６ . R １ OR ２ OH ···· (1) HCOOH ···· (2) (In the above formula (1), R １ represents a monovalent organic group, and R ２ represents a divalent organic group.)

[0009] In one aspect of the semiconductor processing composition, in the formula (1), R １ may be an alkyl group having 1 to 4 carbon atoms.

[0010] In any aspect of the semiconductor processing composition, further, (C) a compound having at least one functional group selected from the group consisting of an amino group and its salts (excluding compounds having a carboxyl group and nitrogen-containing heterocyclic compounds) may be contained.

[0011] In any aspect of the semiconductor processing composition, the component (C) may be at least one selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.

[0012] In any embodiment of the semiconductor processing composition, component (D) may be an aqueous medium.

[0013] In any embodiment of the semiconductor processing composition described above, it may further contain a nitrogen-containing heterocyclic compound.

[0014] In any embodiment of the semiconductor processing composition, it may further contain an organic acid having two or more carbon atoms.

[0015] One embodiment of the processing method according to the present invention includes the step of processing a semiconductor substrate using a semiconductor processing composition according to any of the above embodiments.

[0016] According to the semiconductor processing composition of the present invention, storage stability is further improved, so that good processing characteristics can be maintained even after storage for a predetermined period, and consequently, the yield of semiconductor device manufacturing can be improved.

[0017] Preferred embodiments of the present invention will be described in detail below. However, the present invention is not limited to the embodiments described below, and includes various modifications that do not alter the essence of the invention.

[0018] In this specification, a numerical range described using "X to Y" means that the numerical value X is included as the lower limit and the numerical value Y is included as the upper limit.

[0019] 1. A semiconductor processing composition according to one embodiment of the present invention contains (A) a compound represented by the following general formula (1) (hereinafter also referred to as "component (A)"), (B) a compound represented by the following general formula (2) (hereinafter also referred to as "component (B)"), and (D) a liquid medium (hereinafter also referred to as "component (D)"), wherein the content of component (A) is M Ａ [Mass %], the content of component (B) is M Ｂ When expressed as [mass%], M Ａ / M Ｂ = 1.0 × 10 ３ ~1.0 x 10 ６ That is. R １ OR ２OH...(1) HCOOH...(2) (In the above formula (1), R １ represents a monovalent organic group, R ２ (This represents a divalent organic group.)

[0020] The semiconductor processing composition according to this embodiment may be a concentrated type intended to be used after dilution in a liquid medium such as pure water or an organic solvent, or it may be an undiluted type intended to be used as is without dilution. In this specification, unless otherwise specified, the term "semiconductor processing composition" shall be interpreted as a concept that includes both concentrated and undiluted types.

[0021] Furthermore, the semiconductor processing composition according to this embodiment can be used as a cleaning agent for removing particles and metal impurities present on the surface of a workpiece after a chemical mechanical polishing (CMP) process, a resist remover for removing a resist film from a semiconductor substrate processed with a resist, a cleaning agent for removing residue after a dry etching process, and an etching agent for removing surface contamination by shallow etching of the surface of metal wiring, etc.

[0022] In other words, "processing agent" in this specification refers to a liquid agent prepared by adding a liquid medium to the concentrated semiconductor processing composition described above and diluting it, or the undiluted semiconductor processing composition described above itself, which is actually used when processing the surface to be processed. The concentrated semiconductor processing composition described above usually exists in a concentrated state. Therefore, each user can prepare a processing agent by diluting the concentrated semiconductor processing composition described above with a liquid medium, or use the undiluted semiconductor processing composition as a processing agent, and use that processing agent as a cleaning agent for cleaning the surface of the object to be processed after the completion of the CMP process, a resist remover, a residue remover, or an etching agent. The components that may be included in the semiconductor processing composition according to this embodiment will be described in detail below.

[0023] 1.1. (A) Component The semiconductor processing composition according to this embodiment contains (A) a compound represented by the following general formula (1). １ OR ２ OH ・・・・(1) (In the above formula (1), R １ represents a monovalent organic group, R ２ (This represents a divalent organic group.)

[0024] In the above general formula (1), R １ The group represents a monovalent organic group, preferably a hydrocarbon group having 1 to 18 carbon atoms. Examples of hydrocarbon groups having 1 to 18 carbon atoms include aliphatic saturated hydrocarbon groups having 1 to 18 carbon atoms, cyclic saturated hydrocarbon groups having 1 to 18 carbon atoms, and aromatic hydrocarbon groups having 6 to 10 carbon atoms. Among these, aliphatic saturated hydrocarbon groups having 1 to 18 carbon atoms are preferred.

[0025] In the above general formula (1), R １ The alkyl group is preferably a C1-C18 alkyl group, more preferably a C1-C12 alkyl group, even more preferably a C1-C8 alkyl group, and particularly preferably a C1-C4 alkyl group. Examples of C1-C4 alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, and tert-butyl groups, with methyl, ethyl, n-propyl, and n-butyl groups being preferred, and n-butyl groups being more preferred.

[0026] In the above general formula (1), R ２ This represents a divalent organic group, but can also refer to a divalent hydrocarbon group having 1 to 18 carbon atoms or -(R ３ -O-R ４ ) ｎ - (R ３ and R ４ Each of the C1 and C2 independently represents an alkylene group having 2 to 4 carbon atoms, and n represents an integer from 1 to 10.) This is preferable. Examples of divalent hydrocarbon groups having 1 to 18 carbon atoms include divalent aliphatic saturated hydrocarbon groups having 1 to 18 carbon atoms, divalent cyclic saturated hydrocarbon groups having 1 to 18 carbon atoms, and divalent aromatic hydrocarbon groups having 6 to 10 carbon atoms. Among these, divalent aliphatic saturated hydrocarbon groups having 1 to 18 carbon atoms are preferred.

[0027] In the above general formula (1), R ２ is an alkylene group having 1 to 18 carbon atoms or -(R ３ -O-R ４ ) ｎ - (n = 1 to 10) is preferred, and an alkylene group having 1 to 12 carbon atoms or - (R ３ -O-R ４ ) ｎ - (n = 1 to 8) is more preferred, and an alkylene group having 1 to 8 carbon atoms or - (R ３ -O-R ４ ) ｎ - (n=1 to 6) is even more preferable, an alkylene group having 1 to 4 carbon atoms or - (R ３ -O-R ４ ) ｎ - (n=1 to 4) is particularly preferred. Examples of alkylene groups having 1 to 4 carbon atoms include ethylene, n-propylene, isopropylene, n-butylene, sec-butylene, isobutylene, and tert-butylene groups, but ethylene, n-propylene, and n-butylene groups are preferred, and n-butylene groups are more preferred. Also, - (R ３ -O-R ４ ) ｎ - Middle R ３ and R ４ Examples include ethylene group, isopropylene group, n-butylene group, sec-butylene group, isobutylene group, and tert-butylene group, but ethylene group, n-propylene group, and n-butylene group are preferred, and ethylene group and n-propylene group are more preferred. - (R ３ -O-R ４ ) ｎ - Medium, R ３ and R ４ It is preferable that they are the same group.

[0028] Examples of component (A) include glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monobutyl ether, tetraethylene glycol monomethyl ether, tetraethylene glycol monoethyl ether, and tetraethylene glycol monobutyl ether. Among these, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, and triethylene glycol monomethyl ether are preferred, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, and dipropylene glycol monomethyl ether are more preferred, and dipropylene glycol monomethyl ether is particularly preferred.

[0029] The content of component (A) is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and particularly preferably 1% by mass or more, when the total mass of the semiconductor processing composition is 100% by mass. On the other hand, the content of component (A) is preferably 90% by mass or less, more preferably 70% by mass or less, and particularly preferably 50% by mass or less, when the total mass of the semiconductor processing composition is 100% by mass. When the content of component (A) is within the above range, good processing characteristics are observed, and these good processing characteristics can be maintained even after storage for a predetermined period.

[0030] 1.2. (B) Component The semiconductor processing composition according to this embodiment contains (B) a compound represented by the following general formula (2): HCOOH ・・・・(2)

[0031] Component (B) is a compound commonly known as "formic acid."

[0032] The content of component (B) is preferably 0.00001% by mass or more, more preferably 0.00002% by mass or more, and particularly preferably 0.00005% by mass or more, when the total mass of the semiconductor processing composition is 100% by mass. On the other hand, the content of component (B) is preferably 0.01% by mass or less, more preferably 0.005% by mass or less, and particularly preferably 0.001% by mass or less, when the total mass of the semiconductor processing composition is 100% by mass. When the content of component (B) is within the above range, good processing characteristics are observed, and these good processing characteristics can be maintained even after storage for a predetermined period.

[0033] 1.3. Content ratio of component (A) to component (B) The content of component (A) in the semiconductor processing composition according to this embodiment is M Ａ [Mass %], the content of component (B) is M Ｂ When expressed as [mass%], M Ａ / M Ｂ The value is preferably 1.0 × 10 ３ The above, and more preferably 1.3 × 10 ３ The above, and more preferably 1.5 × 10 ３ The above, and especially preferably 5.0 × 10 ３ That's all. M Ａ / M Ｂ The value is preferably 1.0 × 10 ６ The following, and more preferably 7.0 × 10 ５ The following, and particularly preferably 5.0 × 10 ５ The following applies:

[0034] In the semiconductor processing composition according to this embodiment, the content ratio of component (A) and component (B) is M Ａ / M Ｂ When the value of is within the above range, the degradation of the semiconductor processing composition is suppressed, and the yield of semiconductor device manufacturing can be improved. On the other hand, M Ａ / M ＢIf the value exceeds the aforementioned range, the semiconductor processing composition is more likely to deteriorate during heating, making it undesirable because stable processing characteristics cannot be maintained.

[0035] 1.4. Component (D) The semiconductor processing composition according to this embodiment contains a liquid medium (D) as its main component. Component (D) can be appropriately selected depending on the purpose of use of the processing agent, such as cleaning, etching, and resist film removal of the workpiece.

[0036] Component (D) is preferably an aqueous medium mainly composed of water. Examples of such aqueous mediums include water, a mixture of water and alcohol, and a mixture containing water and an organic solvent that is compatible with water. Among these aqueous mediums, it is preferable to use water, a mixture of water and alcohol, and it is more preferable to use water.

[0037] Examples of organic solvents include polar solvents such as ketone solvents, ester solvents, ether solvents, amide solvents, glycol solvents, and sulfur-containing compound solvents, as well as known organic solvents that can be used in semiconductor processing steps, such as hydrocarbon solvents.

[0038] Examples of ketone solvents include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone, 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone, acetonylacetone, ionone, diacetonyl alcohol, acetylcarbinol, acetophenone, methyl naphthyl ketone, isophorone, and the like.

[0039] The ester solvent may be a chain-like ester solvent or a cyclic ester solvent. Examples of chain-like ester solvents include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentyl acetate, ethyl methoxyethyl acetate, ethoxyethyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate methyl ether acetate, propylene glycol monopropyl ether acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxypentyl acetate, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate, propylene glycol dipropyl ether acetate Examples include acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, butyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl-3-methoxypropionate, ethyl-3-methoxypropionate, ethyl-3-ethoxypropionate, propyl-3-methoxypropionate, and the like.Furthermore, examples of cyclic ester solvents include lactones such as γ-butyrolactone, ethylene carbonate, and propylene carbonate.

[0040] Examples of ether-based solvents include glycol ether solvents such as ethylene glycol dibutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol dibutyl ether; and diisopentyl ether, diisobutyl ether, dioxane, tetrahydrofuran, anisole, perfluoro-2-butyltetrahydrofuran, perfluorotetrahydrofuran, and 1,4-dioxane.

[0041] Examples of amide solvents include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, hexamethylphosphoric triamide, and 1,3-dimethyl-2-imidazolidinone.

[0042] Examples of glycol-based solvents include ethylene glycol, diethylene glycol, propylene glycol, polyethylene glycol, and polypropylene glycol.

[0043] Examples of sulfur-containing solvents include dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, and sulfolane.

[0044] Examples of hydrocarbon solvents include aliphatic hydrocarbon solvents such as pentane, hexane, octane, decane, 2,2,4-trimethylpentane, 2,2,3-trimethylhexane, perfluorohexane, perfluoroheptane, limonene, and pinene; and aromatic hydrocarbon solvents such as toluene, xylene, ethylbenzene, propylbenzene, 1-methylpropylbenzene, 2-methylpropylbenzene, dimethylbenzene, diethylbenzene, ethylmethylbenzene, trimethylbenzene, ethyldimethylbenzene, and dipropylbenzene.

[0045] 1.5. Other Components The semiconductor processing composition according to this embodiment may contain, in addition to the components described above, any other components that may be appropriate depending on the intended use of the processing agent, such as for cleaning, etching, or resist removal. Examples of such components include (C) compounds having at least one functional group selected from the group consisting of amino groups and salts thereof (excluding compounds having carboxyl groups and nitrogen-containing heterocyclic compounds) (hereinafter also referred to as "component (C)"), water-soluble polymers, organic acids having two or more carbon atoms, pH adjusters, surfactants, nitrogen-containing heterocyclic compounds, and the like.

[0046] 1.5.1. (C) Component The semiconductor processing composition according to this embodiment contains a compound having at least one functional group selected from the group consisting of (C) amino groups and salts thereof (excluding compounds having carboxyl groups and nitrogen-containing heterocyclic compounds). It is believed that by containing component (C), the dissolution of the resist film can be promoted when removing the resist film from a semiconductor substrate. Furthermore, when cleaning the workpiece after CMP is completed, the metal oxide film on the semiconductor substrate (e.g., CuO, Cu) ２ O and Cu(OH) ２ It is believed that the layers (such as the BTA layer) and organic residues (such as the BTA layer) can be effectively removed by etching. Furthermore, when removing residue after the dry etching process, it is believed that the dissolution of the residue can be promoted to improve the removal efficiency.

[0047] Component (C) is preferably water-soluble. In this specification, "water-soluble" means that the mass that dissolves in 100 g of water at 20°C is 0.1 g or more. Furthermore, component (C) is preferably further having a hydroxyl group in addition to at least one functional group selected from the group consisting of amino groups and salts thereof.

[0048] Examples of component (C) include primary amines such as monoethanolamine, monopropanolamine, monoisopropanolamine, methylamine, ethylamine, propylamine, butylamine, pentylamine, and 1,3-propanediamine; secondary amines such as diethanolamine, dipropanolamine, diisopropanolamine, N-methylethanolamine, N-ethylethanolamine, and N-(β-aminoethyl)ethanolamine; tertiary amines such as triethanolamine, tripolamine, triisopropanolamine, N-methyl-N,N-diethanolamine, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, trimethylamine, and triethylamine; and quaternary ammonium salts such as tetramethylammonium hydroxide. These components (C) may be used individually or in combination of two or more.

[0049] Among these (C) components, it is preferable that at least one is selected from the group consisting of monoethanolamine, monoisopropanolamine, diethanolamine, and triethanolamine, with monoethanolamine being more preferable, as it is particularly effective in removing residue after the dry etching process.

[0050] The content of component (C) is preferably 0.005% by mass or more, more preferably 0.01% by mass or more, and particularly preferably 0.02% by mass or more, when the total mass of the semiconductor processing composition is 100% by mass. The content of component (C) is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less, when the total mass of the semiconductor processing composition is 100% by mass. A content of component (C) within the above range is preferable because it improves the performance for removing the resist film and the cleaning performance for removing residue after the dry etching process.

[0051] 1.5.2. Water-soluble polymers The semiconductor processing composition according to this embodiment may contain water-soluble polymers. By containing water-soluble polymers, a film is formed by adsorption to the surface of the object to be processed, which may further reduce corrosion of the object to be processed. As stated above, "water-soluble" means that the mass that dissolves in 100 g of water at 20°C is 0.1 g or more.

[0052] Examples of water-soluble polymers include, but are not limited to, polyacrylic acid, polymethacrylic acid, polymaleic acid, polyvinylsulfonic acid, polyallylsulfonic acid, polystyrenesulfonic acid, and salts thereof; copolymers of monomers such as styrene, α-methylstyrene, and 4-methylstyrene with acid monomers such as (meth)acrylic acid and maleic acid, and polymers having repeating units containing aromatic hydrocarbon groups obtained by condensing benzenesulfonic acid, naphthalenesulfonic acid, etc. with formalin, and salts thereof; vinyl-based synthetic polymers such as polyvinyl alcohol, polyoxyethylene, polyvinylpyrrolidone, polyvinylpyridine, polyacrylamide, polyvinylformamide, polyethyleneimine, polyvinyloxazoline, polyvinylimidazole, and polyallylamine; and modified natural polysaccharides such as hydroxyethylcellulose, carboxymethylcellulose, and modified starch. These water-soluble polymers may be used individually or in combination of two or more.

[0053] The weight-average molecular weight (Mw) of the water-soluble polymer that can be used in this embodiment is preferably 1,000 to 1,500,000, and more preferably 3,000 to 1,200,000. In this specification, "weight-average molecular weight" refers to the weight-average molecular weight in terms of polyethylene glycol, measured by GPC (gel permeation chromatography).

[0054] The content of the water-soluble polymer should be adjusted so that the viscosity of the semiconductor processing composition at room temperature is 2 mPa·s or less. If the viscosity of the semiconductor processing composition at room temperature exceeds 2 mPa·s, the viscosity may become too high, making it difficult to stably supply the semiconductor processing composition to the material to be processed. The viscosity of the semiconductor processing composition is affected by the weight-average molecular weight and content of the added water-soluble polymer, so it is best to adjust it while considering the balance of these factors.

[0055] 1.5.3. Organic Acids Having Two or More Carbons The semiconductor processing composition according to this embodiment may contain organic acids having two or more carbon atoms. By containing organic acids having two or more carbon atoms, it may be possible to effectively remove residue after the dry etching process. Note that the term "organic acid" as used herein does not include the water-soluble polymers mentioned above (e.g., polyacrylic acid, polymethacrylic acid, etc.).

[0056] The organic acid having two or more carbon atoms is not particularly limited and may be a monocarboxylic acid such as acetic acid, propionic acid, or butyric acid, or a polycarboxylic acid having two or more carboxyl groups. The organic acid having two or more carbon atoms may be used alone or in combination of two or more. Among these organic acids, monocarboxylic acids and compounds represented by the following general formula (3) can be preferably used.

[0057] (In the above general formula (3), R ５ (This represents an organic group with 1 to 20 carbon atoms.)

[0058] In the above general formula (3), R ５Examples of C1-C20 organic groups in this context include C1-C20 organic groups having a saturated aliphatic hydrocarbon group, C1-C20 organic groups having an unsaturated aliphatic hydrocarbon group, C6-C20 organic groups having a cyclic saturated hydrocarbon group, C6-C20 organic groups having an unsaturated cyclic hydrocarbon group, C1-C20 hydrocarbon groups having a carboxyl group, C1-C20 hydrocarbon groups having a hydroxyl group, C1-C20 hydrocarbon groups having both a carboxyl group and a hydroxyl group, C1-C20 hydrocarbon groups having an amino group, C1-C20 hydrocarbon groups having both an amino group and a carboxyl group, and C1-C20 organic groups having a heterocyclic group. Among these, organic groups having 1 to 20 carbon atoms and a saturated aliphatic hydrocarbon group, organic groups having 1 to 20 carbon atoms and an unsaturated aliphatic hydrocarbon group, and hydrocarbon groups having 1 to 20 carbon atoms and a carboxyl group are preferred, while organic groups having 6 to 20 carbon atoms and an aryl group, and carboxymethyl groups are particularly preferred.

[0059] Specific examples of compounds represented by the above general formula (3) include citric acid, malonic acid, maleic acid, tartaric acid, malic acid, succinic acid, phthalic acid, glutamic acid, aspartic acid, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, iminodiacetic acid, etc. Among these, it is preferable that at least one is selected from the group consisting of citric acid, malonic acid, maleic acid, tartaric acid, malic acid, and succinic acid, more preferably at least one is selected from the group consisting of citric acid, malonic acid, and malic acid, and particularly preferably at least one is selected from the group consisting of citric acid and malonic acid. Compounds represented by the above general formula (3) may effectively reduce or remove pollutants. Compounds represented by the above general formula (3) may be used alone or in combination of two or more.

[0060] Furthermore, among organic acids having two or more carbon atoms, it is also preferable to use compounds having a zwitterionic structure represented by the following general formula (4). Here, a zwitterionic structure refers to a compound that has one or more functional groups capable of having a positive charge in the semiconductor processing composition and one or more functional groups capable of having a negative charge in the semiconductor processing composition, all within the same molecule. For example, an intramolecular salt compound has a functional group for generating a positive charge, such as an ammonium cation, and a functional group for generating a negative charge, such as a carboxylate anion, within the same molecule.

[0061]

[0062] In the above formula (4), R ６ and R ７ Each of these independently represents a substituted or unsubstituted alkanediyl group having 1 to 6 carbon atoms, but it is preferably a substituted or unsubstituted alkanediyl group having 1 to 4 carbon atoms, and more preferably a substituted or unsubstituted alkanediyl group having 1 to 2 carbon atoms. ８ This represents a substituted or unsubstituted alkyl group having 12 to 18 carbon atoms.

[0063] The compound represented by the above general formula (4) has carboxyl groups at both ends of the molecule. Compounds with such a structure have a high coordination ability with metal ions, and therefore can effectively suppress the progression of excessive etching in metal wiring materials and the like.

[0064] The content of organic acids with two or more carbon atoms is preferably 0.0001% by mass or more and 1% by mass or less, and more preferably 0.0005% by mass or more and 0.5% by mass or less, when the total mass of the semiconductor processing composition is 100% by mass. When the content of organic acids with two or more carbon atoms is within the above range, contaminants can be effectively removed. In addition, excessive etching can be more effectively suppressed, and a good processed workpiece can be obtained.

[0065] 1.5.4. pH Adjuster The pH of the semiconductor processing composition according to this embodiment is preferably 3 or higher, more preferably 4 or higher. The pH of the semiconductor processing composition according to this embodiment is preferably 12 or lower, more preferably 11 or lower. In the case of a semiconductor processing composition for processing a workpiece containing cobalt as a wiring material, the pH of the semiconductor processing composition is preferably 5 or higher, preferably 11 or lower, more preferably 10 or lower.

[0066] In the semiconductor processing composition according to this embodiment, if the desired pH cannot be obtained, a pH adjusting agent may be added separately to adjust the pH to within the specified range. Examples of pH adjusting agents include inorganic acids such as hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid; alkali metal hydroxides such as sodium hydroxide, potassium hydroxide, rubidium hydroxide, and cesium hydroxide; and basic compounds such as ammonia. These pH adjusting agents may be used individually or in combination of two or more.

[0067] In this invention, pH refers to the hydrogen ion concentration, and its value can be measured under conditions of 25°C and 1 atmosphere using a commercially available pH meter (for example, a pH meter manufactured by Toa DKK Corporation, model HM-41X).

[0068] 1.5.5. Surfactants The semiconductor processing composition according to this embodiment may contain surfactants. Nonionic surfactants or anionic surfactants can be preferably used as surfactants. Adding surfactants can enhance the effect of removing particles and metal impurities contained in the CMP slurry from the semiconductor substrate, which may result in a better processed product.

[0069] Examples of nonionic surfactants include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene aryl ethers such as polyoxyethylene octylphenyl ether and polyoxyethylene nonylphenyl ether; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate; and polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, and polyoxyethylene sorbitan monostearate. The nonionic surfactants exemplified above may be used individually or in combination of two or more.

[0070] Examples of anionic surfactants include alkylbenzenesulfonic acids such as dodecylbenzenesulfonic acid; alkylnaphthalenesulfonic acid; alkyl sulfate esters such as lauryl sulfate; sulfate esters of polyoxyethylene alkyl ethers such as polyoxyethylene lauryl sulfate; naphthalenesulfonic acid condensates; alkyliminodicarboxylic acids; and ligninsulfonic acid. These anionic surfactants may also be used in the form of salts. In this case, examples of countercations include sodium ions, potassium ions, and ammonium ions, but ammonium ions are preferred from the viewpoint of preventing the presence of excess potassium or sodium.

[0071] The surfactant content is preferably 0.001% by mass or more and 1% by mass or less, and more preferably 0.005% by mass or more and 0.5% by mass or less, when the total mass of the semiconductor processing composition is taken as 100% by mass.

[0072] 1.5.6. Nitrogen-containing heterocyclic compounds The semiconductor processing composition according to this embodiment may contain nitrogen-containing heterocyclic compounds. Nitrogen-containing heterocyclic compounds are organic compounds comprising at least one heterocyclic ring selected from heterofive-membered rings and heterosix-membered rings, each having at least one nitrogen atom. Specific examples of heterocyclic rings include heterofive-membered rings such as pyrrole structures, imidazole structures, and triazole structures; and heterosix-membered rings such as pyridine structures, pyrimidine structures, pyridazine structures, and pyrazine structures. The heterocyclic ring may form a fused ring. Specifically, examples include indole structures, isoindole structures, benzimidazole structures, benzotriazole structures, quinoline structures, isoquinoline structures, quinazoline structures, cinnoline structures, phthalazine structures, quinoxaline structures, and acridine structures. Among heterocyclic compounds having such structures, heterocyclic compounds having pyridine structures, quinoline structures, benzimidazole structures, and benzotriazole structures are preferred.

[0073] Specific examples of nitrogen-containing heterocyclic compounds include aziridine, pyridine, pyrimidine, pyrrolidine, piperidine, pyrazine, triazine, pyrrole, imidazole, indole, quinoline, isoquinoline, benzoisoquinoline, purine, pteridine, triazole, triazolidine, benzotriazole, carboxybenzotriazole, 1,2-benzoisothiazolin-3-one, 2-methyl-4,5-trimethylene-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, 5-chloro-2-methyl-4-isothiazolin-3-one, N-n-butyl-1,2-benzisothiazolin-3-one, 2-n-octyl-4-isothiazolin-3-one, 4,5-dichloro-2-n-octyl-4-isothiazolin-3-one, and derivatives having these skeletons. Among these, it is preferable that at least one is selected from the group consisting of benzotriazoles and triazoles. These nitrogen-containing heterocyclic compounds may be used individually or in combination of two or more.

[0074] 1.6. Method for Preparing the Semiconductor Processing Composition The semiconductor processing composition according to this embodiment is not particularly limited and can be prepared by known methods. Specifically, it can be prepared by dissolving each of the above-mentioned components in a liquid medium such as water or an organic solvent and filtering the mixture. There are no particular restrictions on the mixing order or mixing method of the above-mentioned components.

[0075] In the method for preparing the semiconductor processing composition according to this embodiment, it is preferable to control the particle amount by filtering with a depth-type or pleated-type filter as needed. Here, a depth-type filter is a high-precision filtration filter also called a deep-layer filtration or volumetric filtration type filter. Such depth-type filters include those with a laminated structure formed by stacking filtration membranes with numerous pores, and those made by winding up fiber bundles. Specific examples of depth-type filters include Profile II, Nexis NXA, Nexis NXT, Polyfine XLD, UltiPleated Profile, etc. (all manufactured by Nippon Pall Co., Ltd.), Depth Cartridge Filter, Wind Cartridge Filter, etc. (all manufactured by Advantec Co., Ltd.), CP Filter, BM Filter, etc. (all manufactured by Chisso Corporation), SlopePure, Dia, MicroSiri, etc. (all manufactured by Rokitechno Co., Ltd.).

[0076] Examples of pleated filters include cylindrical high-precision filtration filters obtained by folding a precision filtration membrane sheet made of nonwoven fabric, filter paper, metal mesh, etc., into pleats, forming it into a cylindrical shape, sealing the seams of the pleats of the sheet liquid-tight, and sealing both ends of the cylinder liquid-tight. Specifically, examples include HDCII, Polyfine II, etc. (all manufactured by Nippon Pall Co., Ltd.), PP pleated cartridge filter (manufactured by Advantec Co., Ltd.), Porous Fine (manufactured by Chisso Corporation), Sartonpore, Micropure, etc. (all manufactured by Rokitechno Co., Ltd.).

[0077] 2. Processing Agents As described above, each user can prepare a processing agent by diluting a concentrated semiconductor processing composition in a liquid medium, or they can use an undiluted semiconductor processing composition as a processing agent. The processing agent can then be used as a cleaning agent for cleaning the surface of a semiconductor substrate, a resist remover, a residue remover after a dry etching process on a semiconductor substrate, or an etching agent.

[0078] Here, the liquid medium used for dilution is synonymous with the liquid medium contained in the semiconductor processing composition described above, and can be appropriately selected from the liquid media exemplified above depending on the type of processing agent.

[0079] One method for diluting a concentrated semiconductor processing composition by adding a liquid medium is to merge the piping supplying the concentrated semiconductor processing composition and the piping supplying the liquid medium midway through the process, mix them, and then supply the mixed processing agent to the surface to be processed. This mixing can be carried out using commonly used methods such as: a method of mixing liquids by collision through a narrow passage under pressure; a method of repeatedly separating and merging the liquid flow by filling the piping with packing materials such as glass tubes; or a method of installing power-driven rotating blades in the piping.

[0080] Another method for diluting a concentrated semiconductor processing composition by adding a liquid medium involves providing separate piping for supplying the concentrated semiconductor processing composition and piping for supplying the liquid medium, supplying a predetermined amount of liquid from each to the surface to be processed, and mixing them on the surface. Furthermore, another method for diluting a concentrated semiconductor processing composition by adding a liquid medium involves placing a predetermined amount of concentrated semiconductor processing composition and a predetermined amount of liquid medium in a single container, mixing them, and then supplying the mixed processing agent to the surface to be processed.

[0081] When diluting a concentrated semiconductor processing composition by adding a liquid medium, it is preferable to dilute 1 part by mass of the concentrated semiconductor processing composition to 1 to 500 parts by mass (1 to 500 times), more preferably to 20 to 500 parts by mass (20 to 500 times), and particularly preferably to 30 to 300 parts by mass (30 to 300 times). It is preferable to dilute with the same liquid medium contained in the concentrated semiconductor processing composition described above. By concentrating the semiconductor processing composition in this way, it becomes possible to transport and store it in smaller containers compared to transporting and storing the processing agent as is. As a result, the costs of transport and storage can be reduced. In addition, since a smaller amount of processing agent is purified compared to purifying the processing agent by filtration, etc., the purification time can be shortened, thereby enabling mass production.

[0082] 3. Processing Method The processing method according to this embodiment includes the step of processing a semiconductor substrate using the semiconductor processing composition described above. The processing method according to this embodiment can be preferably used when removing photoresists, including negative and positive photoresists.

[0083] When using the semiconductor processing composition according to this embodiment for removing photoresist, there are two possible uses. First, a photoresist pattern obtained by lithography is formed, and this is used as a mask to selectively etch a conductive metal film or interlayer film to form a fine circuit, and then the photoresist pattern is removed. Second, the photoresist pattern after the etching process is subjected to plasma ashing, and the residue after plasma ashing (photoresist altered film, metal deposition, etc.) is removed.

[0084] The method for removing the photoresist may include, for example, (I) a step of providing a photoresist layer on a semiconductor substrate, (II) a step of bringing the semiconductor substrate into contact with the above-mentioned semiconductor processing composition, and (III) a step of treating the semiconductor substrate with a rinsing solution.

[0085] As the semiconductor substrate used in step (II) above, for example, a semiconductor substrate on which metal wiring is formed, or a semiconductor substrate on which metal wiring and an interlayer film are formed, can be used. In this case, as the metal wiring, for example, aluminum (Al)-based wiring, copper (Cu)-based wiring, and cobalt (Co)-based wiring can be exemplified. As the interlayer film, for example, an insulating film such as an organic SOG film, a low-dielectric film, and the like can be exemplified.

[0086] Examples of photoresists used in step (I) include (i) a positive-type photoresist containing a naphthoquinone diazide compound and a novolac resin, (ii) a positive-type photoresist containing a compound that generates acid upon exposure, a compound that decomposes with acid and whose solubility in an alkaline aqueous solution increases, and an alkali-soluble resin, (iii) a positive-type photoresist containing a compound that generates acid upon exposure, an alkali-soluble resin having a group that decomposes with acid and whose solubility in an alkaline aqueous solution increases, and (iv) a negative-type photoresist containing a compound that generates acid upon light, a crosslinking agent, and an alkali-soluble resin.

[0087] In step (II) described above, it is preferable to keep the semiconductor processing composition at a constant temperature in a tank with a temperature control function, and to bring the composition into contact with the semiconductor substrate by dropping it from the tip of a nozzle or by spraying it.

[0088] In step (II) described above, the supply temperature of the semiconductor processing composition described above is preferably 65°C or lower, more preferably 60°C or lower. Furthermore, it is preferably 25°C or higher, and more preferably 30°C or higher.

[0089] In step (II) described above, the semiconductor processing composition and the semiconductor substrate can be brought into contact by known methods such as the immersion method, the shower method, or the paddle method. However, it is preferable to fix the semiconductor substrate on a rotatable table and bring it into contact with the semiconductor processing composition while rotating it. In this case, the rotation speed of the semiconductor substrate is preferably 1000 rpm or less, more preferably 800 rpm or less. It is also preferably 300 rpm or more, and more preferably 400 rpm or more.

[0090] In step (II) above, when the semiconductor substrate is fixed on a rotatable table and rotated while in contact with the semiconductor processing composition, the supply rate of the semiconductor processing composition is preferably 1500 mL / min or less, more preferably 1000 mL / min or less. Furthermore, it is preferably 500 mL / min or more, and more preferably 600 mL / min or more. In addition, within the range of the supply rate, the supply time of the semiconductor processing composition is preferably 300 seconds or less, more preferably 200 seconds or less. Furthermore, it is preferably 30 seconds or more, and more preferably 40 seconds or more.

[0091] By bringing the semiconductor processing composition into contact with the semiconductor substrate under the conditions described above, effective removal of photoresist, removal of residue after ashing, and prevention of corrosion of the semiconductor substrate can be achieved. In particular, when removing residue after plasma ashing (photoresist altered film, metal deposition, etc.), after plasma ashing, photoresist residue (photoresist altered film) and metal deposition generated during metal film etching adhere to and remain on the surface of the semiconductor substrate as residue. By bringing these residues into contact with the semiconductor processing composition described above, the residues on the semiconductor substrate can be effectively removed. Plasma ashing is a method for removing photoresist patterns, but plasma ashing often leaves a portion of the photoresist pattern as an altered film. The processing method according to this embodiment is particularly effective for the complete removal of the photoresist altered film in such cases.

[0092] Examples of rinsing solutions that can be used in step (III) include pure water and organic solvents such as lower alcohols. Furthermore, a drying treatment may be performed after treatment with the rinsing solution.

[0093] 4. Examples The present invention will be described below with reference to examples, but the present invention is not limited in any way by these examples. In these examples, "parts" and "%" are based on mass unless otherwise specified.

[0094] 4.1. Preparation of semiconductor processing compositions Each of the components shown in Table 1 or Table 2 below was placed in a polyethylene container and stirred for 5 minutes to obtain the semiconductor processing compositions of Examples 1 to 13 and Comparative Examples 1 to 4.

[0095] 4.2. Evaluation Method <pH Measurement> The pH of the semiconductor processing composition obtained immediately after preparation, as described above, at 25°C was measured using a pH meter, model HM-41X, manufactured by Toa DKK Corporation. Furthermore, the semiconductor processing composition obtained above was placed in a 500 ml polyethylene container and stored at 25°C for one month, and the pH after storage was measured in the same manner. If the difference between the pH immediately after preparation and the pH after storage is small, it can be judged that the storage stability of the semiconductor processing composition is good.

[0096] <Evaluation of Cobalt Film Etching Rate> A 300 mm diameter wafer (manufactured by Advantech Co., Ltd.) with a 200 Å cobalt film on a silicon wafer was cut into 3 cm squares (hereinafter also referred to as "Co substrate") and used for evaluation. The semiconductor processing composition prepared as described above was placed in a 500 ml polyethylene container and controlled to 30°C in a water bath, where the Co substrate was immersed for 5 minutes. After immersion, the Co substrate was removed with tweezers, washed with pure water, and dried. The thickness of the cobalt film on the Co substrate was measured using a Rigaku AZX400 thin-film evaluation X-ray fluorescence analyzer, and the etching rate per minute was calculated to evaluate the etching rate of the cobalt film. Furthermore, the semiconductor processing composition obtained as described above was placed in a 500 ml polyethylene container and stored at 25°C for one month, and the etching rate of the cobalt film was evaluated in the same manner. In both the pre- and post-storage conditions, if the etching rate of the cobalt film is 3.5 Å / min or less, it is considered to be a good result. Furthermore, if the change in the etching rate of the cobalt film before and after storage is small, it is considered to be an even better result.

[0097] <Evaluation of Residue Removal Characteristics> A 200 mm diameter wafer with a 4000 Å TEOS film on silicon was prepared by forming a 300 nm thick TiN pattern using a MIT854 mask (manufactured by Advantech Co., Ltd.), and then cut it into 3 cm squares (hereinafter also referred to as "pattern substrate"). This pattern substrate was processed using a Samco ion etching apparatus, model RIE-10NR, to produce a pattern substrate with residue after dry etching. The semiconductor processing composition immediately after preparation was placed in a 500 ml polyethylene container and the water bath was controlled to 30°C. The pattern substrate with the residue after dry etching was placed in this water bath and immersed for 5 minutes. After that, it was removed with tweezers, washed with pure water, and then dried. The surface of the pattern substrate was observed using a Hitachi High-Technologies scanning electron microscope, model S-4800, to examine the degree of residue. Furthermore, the semiconductor processing composition obtained above was placed in a 500 ml polyethylene container and stored at 25°C for one month, after which the residue removal characteristics were evaluated in the same manner. Dry etching apparatus conditions: Output: 50 W Pressure: 10 Pa Etching time: 6 minutes Gas flow rate: Ar 20 SCCM and C4F8 20 SCCM SCCM: Standard Cubic Centometer per Minute (Evaluation criteria) A: No residue remains around the 1-micron square dot pattern, so it is judged to be good. B: Residue remains around the 1-micron square dot pattern, so it is judged to be unsuitable for practical use and is therefore unsuitable.

[0098] 4.3. Evaluation Results The composition and evaluation results of the semiconductor processing composition are shown in Table 1 or Table 2 below.

[0099]

[0100]

[0101] In Tables 1 and 2 above, the values ​​for each component represent mass percent. In each example and comparative example, the total amount of each component is 100% by mass, and the remaining amount is deionized water. Here, we will provide further explanations for each component in Table 1 or Table 2 above.

[0102] <(A) Ingredients> ・DPM: Dipropylene glycol monomethyl ether, manufactured by Tokyo Chemical Industry Co., Ltd., product name "Dipropylene Glycol Monomethyl Ether" ・BCS: Ethylene glycol monobutyl ether, manufactured by Tokyo Chemical Industry Co., Ltd., product name "Ethylene Glycol Monobutyl Ether" ・PGME: Propylene glycol monomethyl ether, manufactured by Tokyo Chemical Industry Co., Ltd., product name "1-Methoxy-2-propanol" <(B) Ingredients> ・Formic acid: manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., product name "Formic acid" <(C) Ingredients> ・MEA: Monoethanolamine, manufactured by Tokyo Chemical Industry Co., Ltd., product name "2-Aminoethanol"・DEA: Diethanolamine, manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., product name "Diethanolamine, 99%" ・TEA: Triethanolamine, manufactured by Tokyo Chemical Industry Co., Ltd., product name "Triethanolamine" <Nitrogen-containing heterocyclic compounds> ・BTA: Benzotriazole, manufactured by Tokyo Chemical Industry Co., Ltd., product name "1,2,3-Benzotriazole" ・5Me-BTA: 5-Methyl-1H-Benzotriazole, manufactured by Tokyo Chemical Industry Co., Ltd., product name "5-Methyl-1H-Benzotriazole" ・TT-LYK: 2,2'-[[(methyl-1H-benzotriazole-1-yl)methyl]imino]bisethanol, manufactured by Johoku Chemical Industry Co., Ltd., product name "TT-LYK" - 1,2,4-Triazole: Manufactured by Tokyo Chemical Industry Co., Ltd., product name "1,2,4-Triazole" <Organic acids with 2 or more carbon atoms> - Acetic acid: Manufactured by Kanto Chemical Co., Ltd., product name "Acetic acid" - Propionic acid: Manufactured by Tokyo Chemical Industry Co., Ltd., product name "Propionic Acid" - Butyric acid: Manufactured by Kanto Chemical Co., Ltd., product name "n-Butyric acid" <Other additives> - HF: Hydrofluoric acid, manufactured by Stella Chemifa Co., Ltd., product name "Ultra-high purity hydrofluoric acid"

[0103] As shown in Tables 1 and 2 above, the content of component (A) M Ａ [Mass %] and the content of component (B) M Ｂ Ratio M to [mass%] Ａ / M Ｂ 1.0 × 10 ３ ~1.0 x 10 ６The semiconductor processing composition was able to efficiently remove residues from a patterned substrate having residues after dry etching. Further, the semiconductor processing compositions of Examples 1 to 13 had good results in that the pH did not change and the cobalt film did not decrease in thickness even after being stored at 25°C for one month.

[0104] Like the semiconductor processing compositions of Comparative Example 1 and Comparative Example 3, when M Ａ / M Ｂ is less than 1.0×10 ３ although it was possible to remove the residues from the patterned substrate having residues after dry etching, when stored at 25°C for one month, the pH decreased from 4.8 to 4.2 in Comparative Example 1 and from 4.5 to 4.1 in Comparative Example 3, and as a result, the cobalt film decreased in thickness. Further, like the semiconductor processing compositions of Comparative Example 2 and Comparative Example 4, when M Ａ / M Ｂ exceeds 1.0×10 ６ it was not possible to completely remove the residues from the patterned substrate having residues after dry etching.

[0105] According to the results in Table 1 and Table 2 above, when a semiconductor processing composition in which M Ａ / M Ｂ is within the range of 1.0×10 ３ to 1.0×10 ６ is used, since the change in pH is small even when stored at 25°C for one month, the cobalt film does not decrease in thickness, and it became clear that residues can be efficiently removed from a patterned substrate having residues after dry etching.

[0106] The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations having the same functions, methods, and results, or configurations having the same purposes and effects). Further, the present invention includes configurations in which non-essential parts of the configurations described in the embodiments are replaced. Further, the present invention includes configurations having the same operational effects as the configurations described in the embodiments or configurations capable of achieving the same purposes. Further, the present invention includes configurations in which known techniques are added to the configurations described in the embodiments.

Claims

1. (A) A compound represented by the following general formula (1); (B) A compound represented by the following general formula (2); (D) A liquid medium, and containing, when the content of the component (A) is M Ａ [mass%], and the content of the component (B) is M Ｂ [mass%], M Ａ / M Ｂ = 1.0 × 10 ３ to 1.0 × 10 ６ , a composition for semiconductor processing. R １ OR ２ OH ···· (1) HCOOH ···· (2) (In the above formula (1), R １ represents a monovalent organic group, and R ２ represents a divalent organic group.) 2. In formula (1) above, R １ The semiconductor processing composition according to claim 1, wherein is an alkyl group having 1 to 4 carbon atoms.

3. The semiconductor processing composition according to claim 1, further comprising (C) a compound having at least one functional group selected from the group consisting of an amino group and salts thereof (excluding compounds having a carboxyl group and nitrogen-containing heterocyclic compounds).

4. The semiconductor processing composition according to claim 3, wherein component (C) is at least one selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.

5. The semiconductor processing composition according to claim 1, wherein component (D) is an aqueous medium.

6. The semiconductor processing composition according to claim 1, further comprising a nitrogen-containing heterocyclic compound.

7. The semiconductor processing composition according to claim 1, further comprising an organic acid having two or more carbon atoms.

8. A processing method comprising the step of processing a semiconductor substrate using a semiconductor processing composition according to any one of claims 1 to 7.

Images