Film adhesive, dicing and die-bonding film, semiconductor device, and production method for semiconductor device

Abstract

Disclosed is a film adhesive that contains a thermosetting resin component, an elastomer, and an inorganic filler. The inorganic filler is formed from a substance that has a thermal conductivity of 10–2000 W / (m·K) at 20°C. The inorganic filler content is at least 70 mass% of the entire film adhesive. The shear viscosity at 120°C is 4500–24000 Pa·s.

Description

Film-like adhesive, dicing and die bonding integrated film, semiconductor device and method for manufacturing the same.

[0001] This disclosure relates to a film-like adhesive, a dicing-die bonding integrated film, and a semiconductor device and a method for manufacturing the same.

[0002] Conventionally, semiconductor devices are manufactured through the following process. First, a semiconductor wafer is attached to a dicing adhesive sheet, and in this state, the semiconductor wafer is divided into individual semiconductor chips (dicing process). Subsequently, a pickup process, a crimping process, and a semiconductor chip bonding process are carried out. Patent Document 1 discloses an adhesive film (dicing / die bonding integrated film) that has the function of fixing the semiconductor wafer in the dicing process and the function of bonding the semiconductor chip to a support member in the semiconductor chip bonding process. By dividing the semiconductor wafer and adhesive layer into individual pieces in the dicing process, semiconductor chips with adhesive pieces can be obtained.

[0003] In recent years, devices called power semiconductor devices, which control power and perform other functions, have become widespread. Power semiconductor devices tend to generate heat due to the supplied current, and therefore require excellent heat dissipation. Patent document 2 discloses a film-like adhesive that has higher heat dissipation after curing than before curing.

[0004] Japanese Patent Publication No. 2008-218571 Japanese Patent Publication No. 2016-103524

[0005] Semiconductor devices are rapidly becoming more integrated, higher performing, and thinner, increasing the importance of 3D packaging technology, which involves stacking multiple semiconductor chips. Thinning semiconductor chips tends to increase warpage caused by curing shrinkage after die bonding. Such warpage can lead to mounting defects in subsequent processes and crack formation in the semiconductor chip, potentially significantly reducing the reliability of semiconductor devices. Therefore, film-type adhesives used to bond semiconductor chips are required to have properties that alleviate stress during curing and suppress semiconductor chip warpage.

[0006] On the other hand, increasing the power output and integration of semiconductor devices leads to an increase in heat generation during operation. Efficiently dissipating this heat to the outside (heat dissipation) is extremely important in preventing performance degradation and malfunctions of semiconductor devices and ensuring long-term reliability. Therefore, the cured product of a film-type adhesive is required to have excellent thermal conductivity.

[0007] Generally, to increase thermal conductivity, it is necessary to fill the film-type adhesive with inorganic fillers that have excellent thermal conductivity. However, when inorganic fillers are filled to a high degree, the viscosity of the film-type adhesive, especially in the high-temperature range where the semiconductor chip bonding process and the subsequent heat curing process are performed, tends to increase excessively, and fluidity tends to decrease. Film-type adhesives with reduced fluidity have difficulty following the stress caused by the warping of thin semiconductor chips, and voids (gaps) tend to easily occur at the adhesive interface, such as at the edges of the semiconductor chip. The occurrence of such voids reduces adhesive reliability and heat dissipation, leading to problems such as assembly defects in semiconductor devices and a decrease in package reliability. On the other hand, if the viscosity of the adhesive is adjusted to be too low, the adhesive may excessively squeeze out from the sides of the chip due to the pressure in the semiconductor chip bonding process and heat curing process, making it impossible to maintain the desired shape of the adhesive layer, and as a result, the warping of the semiconductor chip may not be sufficiently suppressed.

[0008] This disclosure has been made in view of the above circumstances, and its main purpose is to provide a film-like adhesive that can form a cured product having excellent thermal conductivity and can sufficiently suppress warping of semiconductor chips.

[0009] In an effort to solve the above problems, the present inventors found that by adjusting the shear viscosity at 120°C to a predetermined range in a film-like adhesive containing a thermosetting resin component, an elastomer, and an inorganic filler, it is possible to achieve both improved thermal conductivity and suppression of semiconductor chip warping at a high level, thus completing the present invention.

[0010] This disclosure provides a film-like adhesive as described in [1] to [8], a dicing-die bonding integrated film as described in [9], a semiconductor device as described in

[10] and

[11] , and a method for manufacturing a semiconductor device as described in

[12] to

[16] . [1] A film-like adhesive comprising a thermosetting resin component, an elastomer, and an inorganic filler, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 2000 W / (m·K) at 20°C, the content of the inorganic filler is 70% by mass or more based on the total amount of the film-like adhesive, and the shear viscosity at 120°C is 4500 to 24000 Pa·s. [2] The film-like adhesive as described in [1], wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 600 W / (m·K) at 20°C. [3] The film-like adhesive according to [1], wherein the inorganic filler is composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide. [4] The film-like adhesive according to any one of [1] to [3], wherein the thermosetting resin component comprises epoxy resin and phenolic resin. [5] The film-like adhesive according to [4], wherein the epoxy resin comprises a liquid epoxy resin that is liquid at 30°C and a solid epoxy resin that is solid at 30°C. [6] The film-like adhesive according to any one of [1] to [5], wherein the average particle size of the inorganic filler is 0.1 to 5 μm. [7] The film-like adhesive according to any one of [1] to [6], wherein the thermal conductivity at 35°C after heat curing at 110°C for 1 hour and at 170°C for 3 hours is 1.0 W / (m·K) or more. [8] The film-like adhesive according to any one of [1] to [7], wherein the thickness is 30 μm or less. [9] A dicing and die bonding integrated film comprising, in this order, a base layer, an adhesive layer, and an adhesive layer made of a film-like adhesive described in any of [1] to [8].

[10] A semiconductor device comprising: a first semiconductor chip; a support member on which the first semiconductor chip is mounted; and a cured film-like adhesive according to any one of [1] to [8] provided between the first semiconductor chip and the support member, for bonding the first semiconductor chip and the support member.

[11] The semiconductor device according to

[10] , further comprising: a second semiconductor chip different from the first semiconductor chip, laminated on the surface of the first semiconductor chip.

[12] A method for manufacturing a semiconductor device comprising: a step of producing a plurality of adhesive-piece semiconductor chips, each having a semiconductor chip and an adhesive piece formed by the individualization of the adhesive layer attached to the semiconductor chip, on the adhesive layer of a dicing-die bonding integrated film according to [9]; and a step of bonding a first adhesive-piece semiconductor chip, which has a first semiconductor chip and a first adhesive piece, to a support member via the first adhesive piece.

[13] The method for manufacturing a semiconductor device according to

[12] , further comprising the step of thermally curing the first adhesive piece in the first adhesive piece semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

[14] The method for manufacturing a semiconductor device according to

[12] , further comprising the step of bonding a second adhesive piece semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip in the first adhesive piece semiconductor chip bonded to the support member, via the second adhesive piece.

[15] The method for manufacturing a semiconductor device according to

[14] , further comprising the step of thermally curing the first adhesive piece in the first adhesive piece semiconductor chip and the second adhesive piece in the second adhesive piece semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

[16] A method for manufacturing a semiconductor device, comprising the step of interposing a film-like adhesive described in any of [1] to [8] between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

[0011] This disclosure provides a film-like adhesive that can form a cured product with excellent thermal conductivity and can sufficiently suppress warping of semiconductor chips. Furthermore, this disclosure provides a dicing-die bonding integrated film using such a film-like adhesive. Moreover, this disclosure provides a semiconductor device and a method for manufacturing the same using such a film-like adhesive or a dicing-die bonding integrated film.

[0012] Figure 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. Figure 2 is a schematic cross-sectional view showing one embodiment of a dicing-die bonding integrated film. Figure 3 is a schematic cross-sectional view showing one embodiment of a semiconductor device manufacturing method. Figures 3(a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. Figure 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. Figure 5 is a schematic cross-sectional view showing another embodiment of a semiconductor device. Figure 6 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

[0013] Embodiments of the present disclosure will be described below with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative relationships of the sizes of the components are not limited to those shown in each figure.

[0014] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers listed before and after "~" as the minimum and maximum values, respectively. In numerical ranges described stepwise in this specification, the upper or lower limit of one step in the numerical range may be replaced with the upper or lower limit of another step in the numerical range. Also, in numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. Furthermore, the upper and lower limits described individually can be combined in any way. Also, "A or B" means that either A or B is included, or both are included. Furthermore, unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. The content of each component in the composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified.

[0015] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

[0016] In this specification, "solid at 30°C" means that the melting point or softening point is 30°C or higher, or, if the substance does not have a melting point or softening point, the viscosity measured at 30°C is 3000 Pa·s or higher. "Liquid at 30°C" means that the melting point or softening point is less than 30°C, or, if the substance does not have a melting point or softening point, the viscosity measured at 30°C is less than 3000 Pa·s. The softening point refers to the value measured by the ring-and-ball method in accordance with JIS K7234:1986, JIS K6910:2007, etc. The viscosity measured at 30°C refers to the value measured using an E-type viscometer or a B-type viscometer for the component (compound) held at 30°C.

[0017] [Film-like adhesive] Figure 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. The film-like adhesive 10A shown in Figure 1 is thermosetting and goes through a semi-cured (B stage) state to a (fully) cured (C stage) state after curing treatment. The film-like adhesive 10A may be provided on a support film 20 as shown in Figure 1. The film-like adhesive 10A may be a die bonding film (die attach film) used for bonding a semiconductor chip to a support member or to semiconductor chips to each other.

[0018] The support film 20 is not particularly limited, but examples include films made of polyester, polyethylene, polypropylene, polyethylene terephthalate, polyimide, polyetherimide, polyethylene naphthalate, polymethylpentene, and polytetrafluoroethylene. The support film 20 may be a multilayer film made by combining two or more types of films. The support film 20 may be surface-treated with a release agent such as a silicone-based or silane-based agent. The support film 20 may be surface-treated with UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc. The thickness of the support film 20 may be, for example, 10 to 200 μm or 20 to 170 μm.

[0019] The film-like adhesive 10A contains a thermosetting resin component (hereinafter sometimes referred to as "component (A)"), an elastomer (hereinafter sometimes referred to as "component (B)"), and an inorganic filler (hereinafter sometimes referred to as "component (C)"). Component (A) may include, for example, an epoxy resin (hereinafter sometimes referred to as "component (A1)") and a phenolic resin (hereinafter sometimes referred to as "component (A2)"). In addition to components (A), (B), and (C), the film-like adhesive 10A may further contain a coupling agent (hereinafter sometimes referred to as "component (D)"), a curing accelerator (hereinafter sometimes referred to as "component (E)"), and other components.

[0020] (A) component: thermosetting resin component; (A1) component: epoxy resin. Component (A1) can be used without particular limitations as long as it has an epoxy group in its molecule. Examples of component (A1) include bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolac type epoxy resin; cresol novolac type epoxy resin; bisphenol A novolac type epoxy resin; bisphenol F novolac type epoxy resin; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; fluorene skeleton-containing epoxy resin; triphenolmethane type epoxy resin; biphenyl type epoxy resin; xylylene type epoxy resin; biphenyl aralkyl type epoxy resin; naphthalene type epoxy resin; and diglycidyl ether compounds of polycyclic aromatics such as polyfunctional phenols and anthracenes. Among these, component (A1) may include cresol novolac type epoxy resin, bisphenol F type epoxy resin, or bisphenol A type epoxy resin from the viewpoint of the film's tackiness, flexibility, etc. Bisphenol F type epoxy resins, for example, often have a relatively low softening point, being liquid at 30°C (softening point of 40°C or lower).

[0021] Component (A1) may contain a liquid epoxy resin that is liquid at 30°C (hereinafter sometimes referred to as "component (A1a)"). Component (A1) may be a combination of component (A1a) and a solid epoxy resin that is solid at 30°C (hereinafter sometimes referred to as "component (A1b)"). Component (A1) tends to have an easier time improving the storage modulus after curing by containing component (A1a). In addition, component (A1) tends to have an easier time achieving thin films by being a combination of component (A1a) and component (A1b).

[0022] Examples of commercially available products of component (A1a) include YDF-8170C (product name, manufactured by Nippon Steel Chemical & Material Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 165 g / eq) and EXA-830CRP (product name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq).

[0023] Examples of commercially available components of (A1b) include YDCN-700-10 (product name, manufactured by Nippon Steel Chemical & Material Co., Ltd., cresol novolac type epoxy resin, epoxy equivalent: 210 g / eq, softening point: 80°C), N-500P-10 (product name, manufactured by DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 84°C), HP-4710 (product name, manufactured by DIC Corporation, naphthalene type epoxy resin, epoxy equivalent: 170 g / eq, softening point: 95°C), and NC-7000L (product name, manufactured by Nippon Kayaku Co., Ltd., naphthalene type epoxy resin, epoxy equivalent: 230 g / eq, softening point: 88°C).

[0024] The epoxy equivalent of component (A1) is not particularly limited, but may be 80-350 g / eq, 100-300 g / eq, or 120-250 g / eq. The epoxy equivalent of component (A1) can be measured, for example, by potentiometric titration in accordance with JIS K7236:2009. Alternatively, the epoxy equivalent of component (A1) may be taken from, for example, the manufacturer's catalog value.

[0025] The softening point of component (A1) can be measured, for example, by the ring-and-ball method in accordance with JIS K7234:1986. Alternatively, the softening point of component (A1) may be taken from, for example, the manufacturer's catalog value.

[0026] The content of component (A1a) may be 60% by mass or more, 70% by mass or more, or 75% by mass or more, and may be 95% by mass or less, 90% by mass or less, or 85% by mass or less, based on the total amount of component (A1). The content of component (A1a) in component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0027] The content of component (A1a) may be 2 to 10% by mass based on the total amount of the film-like adhesive. The content of component (A1a) may be 3% or more by mass, 4% or more by mass, or 5% or more by mass, and may be 9% or less by mass, 8% or less by mass, or 7% or less by mass, based on the total amount of the film-like adhesive. Reducing the content of component (A1a) tends to improve the shear viscosity at 120°C. The content of component (A1a) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0028] The content of component (A1b) may be 5% by mass or more, 10% by mass or more, or 15% by mass or more, and may be 40% by mass or less, 30% by mass or less, or 25% by mass or less, based on the total amount of component (A1). The content of component (A1b) in component (A1) in the adhesive composition when forming a film-like adhesive may be the same as the above range.

[0029] The content of component (A1b) may be 0.1 to 3% by mass, based on the total amount of the film-like adhesive. The content of component (A1b) may be 0.3% or more by mass, 0.5% or more by mass, or 0.7% or more by mass, and may be 2.5% or less by mass, 2% or less by mass, or 1.8% or less by mass, based on the total amount of the film-like adhesive. The content of component (A1b) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0030] The content of component (A1) (the sum of components (A1a) and (A1b)) may be 2% by mass or more, 4% by mass or more, or 6% by mass or more, based on the total amount of the film-like adhesive. When the content of component (A1) is within this range, it tends to be easier to improve the storage modulus after curing. The content of component (A1) may be 15% by mass or less, 12% by mass or less, or 10% by mass or less, based on the total amount of the film-like adhesive, since the content of component (C) can be sufficiently ensured. The content of component (A1) (the sum of components (A1a) and (A1b)) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0031] (A2) Examples of commercially available components include MEH-7500 (product name, manufactured by UBE Corporation, trisphenylmethane-type phenol novolac resin, hydroxyl group equivalent: 97 g / eq, softening point: 110°C), H-4 (product name, manufactured by UBE Corporation, phenylaralkyl-type phenol resin, hydroxyl group equivalent: 105 g / eq, softening point: 69°C), PSM-4326 (product name, manufactured by Gun-ei Chemical Industry Co., Ltd., phenol novolac resin, hydroxyl group equivalent: 105 g / eq, softening point: 120°C), HF-1M (product name, manufactured by UBE Corporation, phenol novolac resin, hydroxyl group equivalent: 106 g / eq, softening point: 8 Examples include HF-3M (product name, manufactured by UBE Corporation, phenol novolac resin, hydroxyl group equivalent: 107 g / eq, softening point: 96°C), MEH-7800-4S (product name, manufactured by UBE Corporation, xylylene-type phenol resin, hydroxyl group equivalent: 173 g / eq, softening point: 63°C), MEH-7800M (product name, manufactured by UBE Corporation, phenyl aralkyl-type phenol resin, hydroxyl group equivalent: 174 g / eq, softening point: 82°C), MEHC-7851SS (product name, manufactured by UBE Corporation, biphenyl-type phenol novolac resin, hydroxyl group equivalent: 203 g / eq, softening point: 67°C), etc.

[0032] The hydroxyl group equivalent of component (A2) may be 70 to 300 g / eq, 90 to 280 g / eq, or 110 to 260 g / eq. The hydroxyl group equivalent of component (A2) can be measured, for example, by titration using the acetylation method with acetic anhydride. Alternatively, the hydroxyl group equivalent of component (A2) may be taken from, for example, the manufacturer's catalog value.

[0033] (A2) The softening point of component (A2) is not particularly limited, but may be, for example, 150°C or lower, 130°C or lower, 110°C or lower, or 90°C or lower. The lower limit of the softening point of component (A2) may be, for example, 50°C or higher, 60°C or higher, or 65°C or higher. The softening point of component (A2) can be measured, for example, by the ring-and-ball method in accordance with JIS K6910:2007. The softening point of component (A2) may be, for example, the value in the manufacturer's catalog.

[0034] The ratio of the number of equivalent epoxy groups in component (A1) to the number of equivalent hydroxyl groups in component (A2) (epoxy groups / hydroxyl groups) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or higher, more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or lower, it is possible to prevent the viscosity from becoming too high and to obtain more sufficient fluidity.

[0035] The content of component (A2) may be 3 to 12% by mass, based on the total amount of the film-like adhesive. The content of component (A2) may be 4% or more by mass, 5% or more by mass, or 6% or more by mass, based on the total amount of the film-like adhesive, as it tends to more easily improve the storage modulus after curing. The content of component (A2) may be 11% or less by mass, 10.5% or less by mass, or 10% or less by mass, based on the total amount of the film-like adhesive, as it allows for sufficient content of component (C). The content of component (A2) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0036] The content of component (A) (the sum of components (A1) and (A2)) may be 4% by mass or more, 8% by mass or more, or 12% by mass or more, based on the total amount of the film-like adhesive. When the content of component (A) is within this range, it tends to be easier to improve the storage modulus after curing. The content of component (A) may be 30% by mass or less, 24% by mass or less, or 20% by mass or less, based on the total amount of the film-like adhesive, since the content of component (C) can be sufficiently ensured. The content of component (A) (the sum of components (A1) and (A2)) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0037] Component (B): Elastomer As the component (B), a resin having thermoplasticity, or a resin having thermoplasticity at least in the uncured state and forming a crosslinked structure after heating can be used. From the viewpoint of excellent shrinkage resistance, heat resistance, and stress relaxation property, the component (B) may be a (meth)acrylic copolymer having a reactive group (hereinafter, may also be referred to as "reactive group-containing (meth)acrylic copolymer").

[0038] Examples of the (meth)acrylic copolymer include (meth)acrylate copolymers such as acrylic glass and acrylic rubber. The (meth)acrylic copolymer may be acrylic rubber. Acrylic rubber may be formed by copolymerizing a monomer selected from (meth)acrylate and acrylonitrile, with acrylate as the main component.

[0039] Examples of the (meth)acrylate include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, hexyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, lauryl (meth)acrylate, etc. Examples of the (meth)acrylate copolymer include a copolymer containing butyl acrylate and acrylonitrile as copolymerization components, and a copolymer containing ethyl acrylate and acrylonitrile as copolymerization components.

[0040] The reactive group-containing (meth)acrylic copolymer may be a reactive group-containing (meth)acrylic copolymer containing a (meth)acrylic monomer having a reactive group as a copolymerization component. Such a reactive group-containing (meth)acrylic copolymer can be obtained by copolymerizing a monomer mixture containing a (meth)acrylic monomer having a reactive group and the above monomers.

[0041] Examples of the reactive group include an epoxy group, a carboxyl group, a (meth)acryloyl group, a hydroxyl group, an episulfide group, etc. from the viewpoint of improving heat resistance. The reactive group may be an epoxy group or a carboxyl group from the viewpoint of crosslinkability.

[0042] In this embodiment, the reactive group-containing (meth)acrylic copolymer may be an epoxy group-containing (meth)acrylic copolymer containing a (meth)acrylic monomer having an epoxy group as a copolymerization component. In this case, examples of the (meth)acrylic monomer having an epoxy group include glycidyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate glycidyl ether, 3,4-epoxycyclohexylmethyl (meth)acrylate, and the like. The (meth)acrylic monomer having a reactive group may be glycidyl (meth)acrylate from the viewpoint of heat resistance.

[0043] The glass transition temperature (Tg) of component (B) is, for example, -50 to 20°C, and may be -30 to 15°C. When the Tg of component (B) is -50°C or higher, it is easy to suppress the excessive softening of the film-like adhesive, and excellent handleability and adhesiveness can be achieved. On the other hand, when the Tg of component (B) is 20°C or lower, it is easy to ensure the flexibility of the film-like adhesive, and excellent adhesive strength can be achieved. In addition, even if there are irregularities on the adherent surface, the film-like adhesive can easily follow the irregularities and exhibit excellent adhesiveness.

[0044] The Tg of component (B) is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of component (B) is the midpoint glass transition temperature calculated by measuring the heat change under the conditions of a heating rate of 10°C / min and a measurement temperature of -80 to 80°C in accordance with the method based on JIS K7121:1987. When component (B) is a commercially available product, the value described in the catalog or the like may be adopted.

[0045] The weight-average molecular weight of component (B) may be between 100,000 and 2,000,000. A weight-average molecular weight of 100,000 or more makes it easier to ensure heat resistance. On the other hand, a weight-average molecular weight of 2,000,000 or less makes it easier to suppress the decrease in flow and adhesion. The weight-average molecular weight of component (B) may be between 400,000 and 1,500,000 or between 500,000 and 1,200,000. The weight-average molecular weight is the polystyrene equivalent value obtained using a calibration curve with standard polystyrene in gel permeation chromatography (GPC). If multiple peaks are observed in GPC, the weight-average molecular weight attributable to the peak with the highest peak intensity is defined as the weight-average molecular weight in this specification.

[0046] Examples of commercially available components (B) include SG-P3, SG-80H (both manufactured by Nagase ChemteX Corporation), and KH-CT-865 (manufactured by Resonaq Corporation).

[0047] The content of component (B) may be, for example, 1 to 12% by mass, based on the total amount of the film-like adhesive. When the content of component (B) is within the above range, the content of component (C) can be sufficiently ensured, shrinkage associated with the thermal curing of the film-like adhesive can be suppressed, and it tends to be easier to achieve excellent adhesion after thermal curing. The content of component (B) may be, for example, 2% by mass or more, 3% by mass or more, or 4% by mass or more, or 10% by mass or less, 8% by mass or less, or 7.5% by mass or less, based on the total amount of the film-like adhesive. By reducing the content of component (B), it tends to be possible to improve the shear viscosity at 120°C. The content of component (B) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0048] (C) Component: Inorganic filler Component (C) is a component for forming a cured product with excellent thermal conductivity, and it is possible to improve heat dissipation when a film-like adhesive is applied to a semiconductor device. Component (C) is a filler composed of a substance with a thermal conductivity (at 20°C) of 10 to 2000 W / (m·K). Component (C) can also be described as an inorganic filler with a thermal conductivity (at 20°C) of 10 to 2000 W / (m·K). If component (C) is such a filler, the thermal conductivity can be further increased.

[0049] Examples of materials with a thermal conductivity (at 20°C) of 10 to 2000 W / (m·K) include oxides such as aluminum oxide (alumina, thermal conductivity (20°C): 30 W / (m·K)), zinc oxide (thermal conductivity (20°C): 60 W / (m·K)), and magnesium oxide (thermal conductivity (20°C): 50 W / (m·K)), as well as boron nitride (thermal conductivity (20°C) of hexagonal boron nitride (h-BN): 60 W / (m·K) (representative value for sintered bodies. The crystal has high anisotropy). The thermal conductivity reaches several hundred W / (m·K) in the in-plane direction. Other examples include cubic boron nitride (c-BN) with a thermal conductivity of 300 W / (m·K) at 20°C (high-quality materials exceeding 1000 W / (m·K)), aluminum nitride (thermal conductivity at 20°C: 160 W / (m·K)), silicon nitride (thermal conductivity at 20°C: 25 W / (m·K)), diamond (thermal conductivity at 20°C: 2000 W / (m·K)), silicon carbide (thermal conductivity at 20°C: Carbides such as 195 W / (m·K), silver (thermal conductivity (20°C): 430 W / (m·K)), copper (thermal conductivity (20°C): 400 W / (m·K)), gold (thermal conductivity (20°C): 320 W / (m·K)), aluminum (thermal conductivity (20°C): 240 W / (m·K)), magnesium (thermal conductivity (20°C): 160 W / (m·K)), tungsten (thermal conductivity (20°C): 170 W / (m·K)), molybdenum (thermal conductivity (20°C): 1 Examples of metals with thermal conductivity include 40 W / (m·K), zinc (thermal conductivity (20°C): 120 W / (m·K)), nickel (thermal conductivity (20°C): 90 W / (m·K)), iron (thermal conductivity (20°C): 80 W / (m·K)), platinum (thermal conductivity (20°C): 70 W / (m·K)), tin (thermal conductivity (20°C): 70 W / (m·K)), lead (thermal conductivity (20°C): 35 W / (m·K)), and titanium (thermal conductivity (20°C): 20 W / (m·K)).

[0050] Component (C) may, in one embodiment, be a filler composed of a substance having a thermal conductivity (at 20°C) of 10 to 600 W / (m·K). The thermal conductivity (at 20°C) may be, for example, 20 W / (m·K) or more, and may be 500 W / (m·K) or less, 400 W / (m·K) or less, 300 W / (m·K) or less, 200 W / (m·K) or less, 150 W / (m·K) or less, 120 W / (m·K) or less, 100 W / (m·K) or less, 80 W / (m·K) or less, 60 W / (m·K) or less, or 40 W / (m·K) or less.

[0051] Component (C) may, in one embodiment, be a filler composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide, or it may be a filler composed of at least one substance selected from the group consisting of aluminum oxide, magnesium oxide, boron nitride, and aluminum nitride. Component (C) may, for example, be an aluminum oxide (alumina) filler.

[0052] The aluminum oxide (alumina) filler may be composed of alumina with a purity of 99.0% by mass or higher and low chlorine content, from the viewpoint of further improving thermal conductivity after heat curing and preventing electromigration during semiconductor device operation. Examples of commercially available aluminum oxide (alumina) fillers include AA-03NF, AA-03N, AA-04N, AA-05N, AA-07N, AA-1.5N, AA-2N, AA-3N, AA-5N (product names, manufactured by Sumitomo Chemical Co., Ltd.), A2-SP-C3, A2-SP-C6, A2-SP-C7, and A14-SX-C37 (product names, manufactured by Admatex Co., Ltd.). The alumina filler may be composed of α-alumina with a purity of 99.0% by mass or higher.

[0053] The magnesium oxide filler may be a filler composed of magnesium oxide with a purity of 95.0% by mass or higher. An example of a commercially available magnesium oxide filler of this type is RF-10C (trade name, manufactured by Ube Materials Co., Ltd.). The purity of the magnesium oxide may be, for example, 100% by mass or less.

[0054] From the viewpoint of further improving thermal conductivity after heat curing, the boron nitride filler may be composed of hexagonal boron nitride (h-BN) with a purity of 99.0% by mass or higher as BN. Examples of commercially available high-purity hexagonal boron nitride (h-BN) fillers include HP-P1, HP-4W (product names, manufactured by Mizushima Iron Alloy Co., Ltd.), and UHP-S1 (product name, manufactured by Resonac Co., Ltd.).

[0055] Aluminum nitride filler is, for example, 3-4 g / cm³. ３ The filler may have a density of . Examples of such aluminum nitride fillers include Shapeal H grade, Shapeal E grade (product names, manufactured by Tokuyama Corporation), and ALN020BF (product name, manufactured by Tomoe Engineering Co., Ltd.).

[0056] The shape of component (C) is not particularly limited and may be, for example, flake-shaped, needle-shaped, spherical, etc., and may be spherical. When component (C) is spherical, the surface roughness (Ra) of the film-like adhesive tends to be easily improved.

[0057] The average particle size of component (C) may be 0.1 to 5 μm. When the average particle size of component (C) is 0.1 μm or more, it tends to be possible to prevent an increase in viscosity when preparing the adhesive varnish, to include a desired amount of component (C) in the film-like adhesive, and to ensure the wettability of the film-like adhesive to the adherend, thereby achieving better adhesive strength. When the average particle size of component (C) is 5 μm or less, the film moldability is improved, and the thermal conductivity due to the addition of component (C) can be further improved. Furthermore, when the average particle size of component (C) is 5 μm or less, the thickness of the film-like adhesive can be made thinner, further increasing the stacking of semiconductor chips, and the occurrence of cracks in the semiconductor chip due to component (C) protruding from the film-like adhesive can be further prevented. The average particle size of component (C) may be 4.5 μm or less or 4 μm or less, or 0.1 μm or more or 0.2 μm or more.

[0058] In this specification, the average particle size of component (C) is the particle size when its ratio (volume fraction) to the total volume of component (C) is 50% (Laser 50% particle size (D) ５０ )) means. Average particle size (D ５０ This can be determined by measuring a suspension of component (C) suspended in water using a laser scattering particle size analyzer (e.g., Microtrac) and the resulting suspension.

[0059] Component (C) may be a combination of multiple inorganic fillers with different average particle sizes. The multiple inorganic fillers with different average particle sizes may be a combination of first particles, which are large particles with a relatively large average particle size, and second particles, which are small particles with a relatively small average particle size. With such a combination, the gaps between the first particles can be filled with the second particles, achieving high packing and tending to improve the shear viscosity at 120°C. The average particle size of the first particles may be, for example, 2 to 5 μm, and the average particle size of the second particles may be, for example, 0.1 to 1 μm.

[0060] Component (C) may be surface-treated with a surface treatment agent from the viewpoint of compatibility between its surface and the solvent, other components, etc., and adhesive strength. Examples of surface treatment agents include silane coupling agents. Examples of functional groups of silane coupling agents include vinyl groups, (meth)acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, ethoxy groups, phenyl groups, phenylamino groups, etc.

[0061] The content of component (C) is 70% by mass or more based on the total amount of the film-like adhesive. When the content of component (C) is 70% by mass or more based on the total amount of the film-like adhesive, the thermal conductivity of the film-like adhesive can be improved, and the heat dissipation of the semiconductor device can be further improved. The content of component (C) may be, for example, 72% by mass or more, 74% by mass or more, or 76% by mass or more based on the total amount of the film-like adhesive. There is no particular upper limit to the content of component (C), but it may be, for example, 85% by mass or less. When the content of component (C) is 85% by mass or less based on the total amount of the film-like adhesive, other components can be included in greater quantity in the film-like adhesive. The content of component (C) may be, for example, 82% by mass or less, 80% by mass or less, or 78% by mass or less based on the total amount of the film-like adhesive. The content of component (C) in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0062] Component (A), component (B), and component (C) may be the main components of the film-like adhesive of this embodiment. The total content of component (A), component (B), and component (C) may be, for example, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 96% by mass or more, 97% by mass or more, 98% by mass or more, 99% by mass or more, 99.5% by mass or more, 99.7% by mass or more, or 99.9% by mass or more, based on the total amount of the film-like adhesive. The total content of component (A), component (B), and component (C) may be, for example, 100% by mass or less, 99.9% by mass or less, 99.7% by mass or less, or 99.5% by mass or less, based on the total amount of the film-like adhesive.

[0063] (D) Component: Coupling agent Component (D) may be a silane coupling agent. Examples of silane coupling agents include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.

[0064] (E) component: curing accelerator. Examples of (E) component include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. Among these, from the viewpoint of reactivity, (E) component may be imidazoles and their derivatives.

[0065] Examples of imidazoles and their derivatives include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole.

[0066] The film-like adhesive may further contain other components. Examples of other components include pigments, ion capture agents, antioxidants, and so on.

[0067] The total content of component (D), component (E), and other components may be 0% by mass or more, 0.01% by mass or more, 0.03% by mass or more, or 0.05% by mass or more, based on the total amount of the film-like adhesive, and may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.5% by mass or less, or 0.3% by mass or less. The total content of component (D), component (E), and other components in the adhesive composition when forming the film-like adhesive may be the same as the above range.

[0068] The thickness of the film-like adhesive 10A may be 30 μm or less. The thickness of the film-like adhesive 10A may be 28 μm or less, 26 μm or less, 24 μm or less, 22 μm or less, 20 μm or less, 18 μm or less, 16 μm or less, 14 μm or less, or 12 μm or less. The thickness of the film-like adhesive 10A may be, for example, 1 μm or more. The thickness of the film-like adhesive 10A can be determined, for example, by measuring the thickness at five locations on the cross-section of the film-like adhesive 10A using a scanning electron microscope and calculating the average of the measured values.

[0069] The film-like adhesive 10A shown in Figure 1 is formed by molding an adhesive composition containing component (A), component (B), and component (C), as well as additional components as needed, into a film. Such a film-like adhesive 10A can be formed by applying the adhesive composition to a support film. In forming the film-like adhesive 10A, a varnish (adhesive varnish) containing the adhesive composition and a solvent may also be used. When using an adhesive varnish, the adhesive varnish can be prepared by mixing or kneading component (A), component (B), and component (C), as well as additional components as needed, in a solvent, applying the obtained adhesive varnish to a support film, and removing the solvent by heating and drying to obtain the film-like adhesive 10A.

[0070] Mixing or kneading can be carried out using conventional agitators, dispersers, three-roll mills, ball mills, and other dispersers, in appropriate combinations.

[0071] The solvent used in the preparation of the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, as well as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, and xylene. From the viewpoint of drying speed and cost, the solvent may be methyl ethyl ketone or cyclohexanone. The concentration of solid components in the adhesive varnish may be 10 to 80% by mass based on the total amount of the adhesive varnish.

[0072] Known methods can be used to apply the adhesive varnish to the support film, such as the knife coating method, roll coating method, spray coating method, gravure coating method, bar coating method, and curtain coating method. The heating and drying conditions are not particularly limited as long as the solvent used is sufficiently evaporated, but may be 50 to 150°C for 1 to 30 minutes.

[0073] The shear viscosity (melt viscosity) of the film adhesive 10A at 120°C is 4500 to 24000 Pa·s. When the shear viscosity at 120°C is 4500 Pa·s or higher, it tends to sufficiently suppress warping of semiconductor chips and poor adhesion caused by excessively low viscosity. When the shear viscosity at 120°C is 24000 Pa·s or lower, it tends to resolve the lack of fluidity caused by excessively high viscosity, suppress the generation of voids, and ensure thermal conductivity. The shear viscosity at 120°C may be, for example, 4800 Pa·s or more, 5000 Pa·s or more, 5500 Pa·s or more, 6000 Pa·s or more, 6500 Pa·s or more, 7000 Pa·s or more, 7500 Pa·s or more, 8000 Pa·s or more, 8500 Pa·s or more, 9000 Pa·s or more, 9500 Pa·s or more, or 10000 Pa·s or more, and may also be 24000 Pa·s or less, 22000 Pa·s or less, 20000 Pa·s or less, 18000 Pa·s or less, 16000 Pa·s or less, 14000 Pa·s or less, 12000 Pa·s or less, or 11000 Pa·s or less.

[0074] In this specification, shear viscosity at 120°C can be measured as follows. First, multiple layers of film-like adhesive are stacked on a 70°C hot plate using a rubber roll to obtain a laminate with a thickness of 400 μm. The obtained laminate is cut to a size of φ9 mm to prepare a sample for measurement. The sample is mounted on the measuring jig of a rotary viscoelasticity measuring device, and the viscoelasticity of the sample is measured under the following conditions. From the measurement results, the viscosity (complex viscosity ratio) at 120°C is read and this is taken as the shear viscosity at 120°C. (Measurement conditions) ・Measuring jig: Parallel plate, made of aluminum, φ8 mm ・Frequency: 1 Hz ・Heating rate: 5°C / min ・Strain: 5% ・Measurement temperature: 30 to 180°C

[0075] In the film-like adhesive 10A, the shear viscosity at 120°C tends to be easily improved by the following methods: • Method 1: Reduce the content of component (B) relatively. • Method 2: Reduce the content of component (A1a) relatively. • Method 3: Use multiple (C) components with different average particle sizes.

[0076] The thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and at 170°C for 3 hours (C-stage state) may be 1.0 W / (m·K) or higher, and may also be 1.1 W / (m·K) or higher. When the thermal conductivity is 1.0 W / (m·K) or higher, the heat dissipation performance of the semiconductor device tends to be better. There is no particular upper limit to the thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and at 170°C for 3 hours (C-stage state), but it may be 10 W / (m·K) or lower or 5.0 W / (m·K) or lower.

[0077] In this specification, the thermal conductivity (at 35°C) of the film-like adhesive 10A after heat curing at 110°C for 1 hour and 170°C for 3 hours (C-stage state) can be measured, for example, by the following method. First, the film-like adhesive is cut to a predetermined size, and multiple film pieces are prepared so that when laminated, the thickness is 300 to 500 μm. These film pieces are laminated on a 60°C hot plate using a rubber roll to produce a laminate with a thickness of 300 to 500 μm. Next, each laminate is heat-cured in a clean oven at 110°C for 1 hour and 170°C for 3 hours to obtain a sample in the C-stage state. The obtained sample is cut into 1 cm × 1 cm pieces, and the thermal conductivity is measured using these as thermal conductivity measurement films under the following measurement items / conditions.

[0078] (Calculation of Thermal Conductivity) The thermal conductivity λ in the thickness direction of the film used for thermal conductivity measurement is calculated by the following formula. The thermal diffusivity α, specific heat Cp, and density ρ are measured by the following method. A higher thermal conductivity λ means that the semiconductor device has better heat dissipation. Thermal conductivity λ (W / (m·K)) = Thermal diffusivity α (mm ２ / s) x specific heat Cp (J / (g・K)) x density ρ (g / cm ３ )

[0079] (Measurement of thermal diffusivity α) A measurement sample is prepared by blackening both sides of a thermal conductivity measurement film with graphite spray. Then, the thermal diffusivity α of this measurement sample is measured using the laser flash method (xenon flash method) with the following measurement device and conditions, for example: • Measurement device: Thermal diffusivity measuring device (e.g., LFA467 HyperFlash, manufactured by Netch Japan Co., Ltd.) • Pulse width of pulsed light irradiation: 0.08 ms • Irradiation voltage of pulsed light irradiation: 180 V • Processing of measurement sample: Blackening both sides of the thermal conductivity measurement film with graphite spray • Measurement ambient temperature: 35°C

[0080] (Measurement of Specific Heat Cp (35°C)) The specific heat Cp (35°C) of the thermal conductivity measurement film is determined, for example, by performing differential scanning calorimetry (DSC) using the following measuring device under the following conditions: • Measuring device: Differential scanning calorimeter (e.g., Rigaku Corporation, product name: DSC8231) • Reference material: Sapphire • Heating rate: 3°C / min • Heating temperature range: 25-75°C

[0081] (Measurement of density ρ) The density ρ of the thermal conductivity measurement film is measured by the Archimedes method using the following measuring device under the following conditions: • Measuring device: Electronic hydrometer (e.g., Alpha Mirage Co., Ltd., product name: EW-300SG) • Water temperature: 25°C

[0082] The film-like adhesive 10A may be used in the manufacturing process of a semiconductor device, and may also be used in the manufacturing process of a semiconductor device that is formed by stacking multiple semiconductor chips (a semiconductor device having a structure in which semiconductor chips are stacked).

[0083] The film-like adhesive 10A is also suitably used as an adhesive for bonding semiconductor chips together in a stacked MCP (for example, a three-dimensional NAND memory), which is a semiconductor device (a semiconductor device having a structure in which semiconductor chips are stacked) made by stacking multiple semiconductor chips.

[0084] The film-like adhesive 10A may be used to bond a semiconductor chip (for example, a first semiconductor chip) to a support member, or it may be used to bond a semiconductor chip (for example, a first semiconductor chip) to a semiconductor chip different from the first semiconductor chip (for example, a second semiconductor chip).

[0085] [Dicing and Die Bonding Integrated Film] Figure 2 is a schematic cross-sectional view showing one embodiment of a dicing and die bonding integrated film. The dicing and die bonding integrated film 100 shown in Figure 2 comprises a base layer 40, an adhesive layer 30, and an adhesive layer 10 consisting of a film-like adhesive 10A, in this order. The dicing and die bonding integrated film 100 can also be said to comprise a dicing film 50 comprising a base layer 40 and an adhesive layer 30 provided on the base layer 40, and an adhesive layer 10 provided on the adhesive layer 30 of the dicing film 50. The dicing and die bonding integrated film 100 may be in the form of a film, sheet, tape, etc. The dicing and die bonding integrated film 100 may have a support film 20 provided on the surface of the adhesive layer 10 opposite to the adhesive layer 30.

[0086] For example, the base material layer 40 in the dicing film 50 can be the same as that of the support film 20.

[0087] The adhesive layer 30 in the dicing film 50 is not particularly limited as long as it has sufficient adhesive strength to prevent semiconductor chips from scattering during dicing and low enough adhesive strength to avoid damaging the semiconductor chips during the subsequent semiconductor chip pickup process; conventionally known adhesives in the field of dicing films can be used. The adhesive layer 30 may be an adhesive layer containing a non-UV curing adhesive or an adhesive layer containing a UV curing adhesive. If the adhesive layer contains a UV curing adhesive, the adhesiveness of the adhesive layer can be reduced by irradiation with ultraviolet light.

[0088] The thickness of the dicing film 50 (base layer 40 and adhesive layer 30) may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economy and ease of handling of the film.

[0089] The dicing-die bonding integrated film 100 shown in Figure 2 can be obtained by a manufacturing method comprising the steps of: preparing a dicing film 50 comprising a film-like adhesive 10A and a base layer 40 and an adhesive layer 30 provided on the base layer 40; and bonding the film-like adhesive 10A and the adhesive layer 30 of the dicing film 50. Known methods can be used for bonding the film-like adhesive 10A and the adhesive layer 30 of the dicing film 50.

[0090] [Method for Manufacturing a Semiconductor Device] Figure 3 is a schematic cross-sectional view showing one embodiment of a method for manufacturing a semiconductor device. Figures 3(a), (b), (c), (d), (e), and (f) are schematic cross-sectional views showing each step. In one embodiment, the method for manufacturing a semiconductor device comprises the steps of: manufacturing a plurality of semiconductor chips 60 with adhesive pieces, each having a semiconductor chip Wa and an adhesive piece 10a formed by the individualization of the adhesive layer 10 attached to the semiconductor chip Wa, on the adhesive layer 30 of the dicing-die bonding integrated film 100 (semiconductor chip manufacturing step with adhesive pieces); and bonding a first semiconductor chip with adhesive pieces, which has a first semiconductor chip and a first adhesive piece, to a support member 80 via the first adhesive piece (adhesive piece 10a) (semiconductor chip bonding step, see Figure 3(f)).

[0091] There are mainly two possible embodiments of the semiconductor chip fabrication process with adhesive attached. The first embodiment, shown in Figure 3, will be described below, but this disclosure is not limited thereto.

[0092] The first embodiment is one in which a semiconductor wafer W is attached to the adhesive layer 10, and then the semiconductor wafer W and the adhesive layer 10 are diced together. That is, the first embodiment may include the steps of: attaching a semiconductor wafer W to the adhesive layer 10 of the dicing-die bonding integrated film 100 (wafer lamination step, see Figures 3(a) and (b)); producing a plurality of adhesive-piece semiconductor chips 60 by dicing the semiconductor wafer W to which the adhesive layer 10 has been attached (dicing step, see Figure 3(c)); and bonding a first semiconductor chip and a first adhesive-piece semiconductor chip having a first adhesive piece to a support member 80 via the first adhesive piece (adhesive piece 10a) (semiconductor chip bonding step, see Figure 3(f)).

[0093] A second embodiment is one in which pre-cut semiconductor chips are attached to an adhesive layer 10, and then only the adhesive layer 10 is diced. That is, the second embodiment may include the steps of: attaching semiconductor chips, which are made by cutting a semiconductor wafer into individual pieces, to the adhesive layer of a dicing-die bonding integrated film; producing a plurality of semiconductor chips with adhesive pieces by dicing the adhesive layer; and bonding a first semiconductor chip and a first semiconductor chip with adhesive pieces, which has the first adhesive piece, to a support member via the first adhesive piece.

[0094] The method for manufacturing a semiconductor device may further include, if necessary, a step of irradiating the adhesive layer 30 with ultraviolet light (through the substrate layer 40) between the dicing step and the semiconductor chip bonding step (ultraviolet irradiation step, see Figure 3(d)), a step of picking up the semiconductor chip Wa (semiconductor chip 60 with adhesive piece) to which the adhesive piece 10a has been attached from the adhesive layer 30a (pickup step, see Figure 3(e)), and a step of thermally curing the adhesive piece 10a on the semiconductor chip 60 with adhesive piece bonded to the support member 80 (thermal curing step).

[0095] The method for manufacturing a semiconductor device may further include a step of bonding a second semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip in the first semiconductor chip with adhesive piece bonded to the support member 80, via the second adhesive piece (adhesive piece 10a) from among a plurality of semiconductor chips with adhesive piece 60.

[0096] <First Embodiment> (Wafer Lamination Process) In this process, first, the dicing-die bonding integrated film 100 is placed in a predetermined apparatus. Next, the surface Ws of the semiconductor wafer W is attached to the adhesive layer 10 of the dicing-die bonding integrated film 100 under heating conditions (see Figures 3(a) and (b)). The circuit surface of the semiconductor wafer W may be provided on the side opposite to the surface Ws. The heating temperature may be, for example, 60 to 80°C.

[0097] Examples of semiconductor wafers W include single-crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

[0098] The thickness of the semiconductor wafer W may be, for example, 50 to 3000 μm, 100 to 2000 μm, or 200 to 1500 μm.

[0099] (Dicing Process) In this process, the semiconductor wafer W and the adhesive layer 10 are diced to form individual pieces (see Figure 3(c)). Dicing can be performed, for example, from the circuit side of the semiconductor wafer according to a conventional method. In this process, for example, a method called full cutting, in which an incision is made up to the adhesive layer 10, a method in which a half-incision is made in the semiconductor wafer W and the wafer is divided by cooling and pulling, or a method of dividing by laser (stealth dicing) can be employed. The dicing apparatus used in this process is not particularly limited, and conventionally known apparatus can be used. At this time, a part of the adhesive layer 30, or all of the adhesive layer 30 and a part of the substrate layer 40 may be diced to form individual pieces. In this way, the dicing-die bonding integrated film 100 also functions as a dicing film.

[0100] (Ultraviolet Irradiation Step) If the adhesive layer 30 contains an ultraviolet-curable adhesive, the method for manufacturing the semiconductor device may include an ultraviolet irradiation step. In this step, ultraviolet light is irradiated onto the adhesive layer 30 (through the substrate layer 40) (see Figure 3(d)). In ultraviolet irradiation, the wavelength of the ultraviolet light may be 200 to 400 nm. The ultraviolet irradiation conditions are illuminance and irradiation dose of 30 to 240 mW / cm², respectively. ２ The range and 50-500 mJ / cm ２ It may be within that range.

[0101] (Pickup Process) In this process, the substrate layer 40 is expanded to separate the semiconductor chips 60 with adhesive pieces from each other, and the semiconductor chips 60 with adhesive pieces that have been pushed up from the substrate layer 40 side by the needle 72 are picked up from the adhesive layer 30a by the suction collet 74 (see Figure 3(e)). The semiconductor chip 60 with adhesive pieces has a semiconductor chip Wa and an adhesive piece 10a. The semiconductor chip Wa is a piece of semiconductor wafer W, and the adhesive piece 10a is a piece of adhesive layer 10. The adhesive layer 30a is the adhesive layer in the region corresponding to the pieced semiconductor chip 60 with adhesive pieces. The adhesive layer 30a may remain on the substrate layer 40 after the semiconductor chip 60 with adhesive pieces has been picked up. In this process, it is not always necessary to expand the substrate layer 40, but expanding the substrate layer 40 can further improve the pickup performance. The expansion of the substrate layer 40 may be a cooled expansion under cooling conditions (for example, -15 to 0°C).

[0102] The thickness of the semiconductor chip Wa may be the same as the thickness of the semiconductor wafer W, or it may be less than the thickness of the semiconductor wafer W. If the thickness of the semiconductor chip Wa is less than the thickness of the semiconductor wafer W, the thickness of the semiconductor chip Wa may be, for example, 10 to 200 μm. The thickness of the semiconductor chip Wa may be 15 μm or more, 20 μm or more, 150 μm or less, 100 μm or less, or 50 μm or less.

[0103] The semiconductor chip Wa may have, for example, a circuit layer. An example of a semiconductor chip with a circuit layer is an IC (integrated circuit).

[0104] The amount of upward thrust by the needle 72 can be set as appropriate. Furthermore, from the viewpoint of ensuring sufficient pickup even for ultrathin wafers, for example, two or three stages of upward thrust may be performed. In addition, the semiconductor chip 60 with adhesive residue may be picked up by a method other than the method using the suction collet 74.

[0105] (Semiconductor Chip Bonding Process) In this process, the picked-up semiconductor chip 60 with adhesive piece (a first semiconductor chip with adhesive piece having a first semiconductor chip and a first adhesive piece, among a plurality of semiconductor chips with adhesive piece) is bonded to the support member 80 via the adhesive piece 10a (first adhesive piece) by thermocompression bonding. Multiple semiconductor chips 60 with adhesive piece may be bonded to the support member 80.

[0106] Examples of the support member 80 include lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; modified plastic films obtained by impregnating and curing a base material such as glass nonwoven fabric with plastic such as polyimide resin and epoxy resin; and various ceramics such as alumina.

[0107] The heating temperature in the heat-sealing process may be, for example, 80 to 160°C. The pressure in the heat-sealing process may be, for example, 0.05 to 0.5 MPa. The heating time in the heat-sealing process may be, for example, 0.5 to 5 seconds.

[0108] (Thermosetting process) In this process, the adhesive piece 10a on the semiconductor chip 60 with adhesive piece attached to the support member 80 is thermoset. By thermosetting the adhesive piece 10a that is bonding the semiconductor chip Wa and the support member 80, it becomes a cured adhesive piece 10ac, which allows for stronger bonding and fixation (see Figure 3(f)). When thermosetting, pressure may be applied simultaneously to cure it. The heating temperature in this process can be appropriately changed depending on the components of the adhesive piece 10a. The heating temperature may be, for example, 60 to 200°C, 90 to 190°C, or 120 to 180°C. The heating time may be 30 minutes to 5 hours, 1 to 3 hours, or 2 to 3 hours. Note that the temperature or pressure may be changed in stages.

[0109] In this thermosetting process, shrinkage stress is generated as the adhesive piece 10a hardens, which can cause warping of the semiconductor chip Wa. However, since the adhesive piece 10a formed from the film-like adhesive in this embodiment is adjusted to a specific shear viscosity range, the stress generated during the hardening process can be effectively mitigated. As a result, warping of the thinned semiconductor chip Wa can be sufficiently suppressed, preventing problems such as mounting defects in subsequent processes and cracks in the semiconductor chip, thereby improving the reliability of the resulting semiconductor device.

[0110] In particular, when the process includes thinning the semiconductor wafer by grinding it from the back side, handling the semiconductor wafer can become difficult. As in the first embodiment, when a thinned semiconductor wafer is diced, cracks and chips tend to occur easily. In contrast, the second embodiment, described later, is particularly advantageous for efficiently and with low damage manufacturing extremely thin semiconductor chips because it involves forming a modified layer or grooves on a relatively thick semiconductor wafer, and then thinning and dicing simultaneously by grinding the back side. Therefore, when the thickness of the semiconductor chip Wa is smaller than the thickness of the original semiconductor wafer W, it is preferable to adopt the second embodiment, especially when manufacturing extremely thin semiconductor chips of 10 to 200 μm.

[0111] <Second Embodiment> In the second embodiment, first, a semiconductor wafer is diced to produce a plurality of individual semiconductor chips. The method for dicing the semiconductor wafer may be a stealth dicing method such as the SDBG (Steel Dicing Before Grinding) method, or a half-cut dicing method such as the DBG (Dicing Before Grinding) method.

[0112] A stealth dicing method may include, for example, the steps of: attaching a protective tape (backgrind tape) to the circuit surface of a semiconductor wafer; forming a modified region inside the semiconductor wafer by irradiating it with laser light; and grinding the semiconductor wafer from the back side and dicing the semiconductor wafer using the modified region as the dividing point.

[0113] A half-cut dicing method may include, for example, the steps of forming grooves on the surface of a semiconductor wafer with a dicing blade, attaching protective tape (backgrind tape) to the circuit surface of the semiconductor wafer, and grinding the semiconductor wafer from the back side up to the grooves to dice the semiconductor wafer.

[0114] By using this method of separating semiconductor wafers into individual pieces, a laminate can be obtained that comprises a protective tape (backgrind tape) and a plurality of semiconductor chips provided on the protective tape.

[0115] Next, the multiple semiconductor chips of the resulting laminate are attached to the adhesive layer 10 of the dicing-die bonding integrated film 100 under heating conditions. The heating temperature may be, for example, 60 to 80°C.

[0116] Next, the protective tape (backgrind tape) is removed. This results in multiple semiconductor chips being arranged in a grid pattern on the adhesive layer of the dicing and die bonding integrated film.

[0117] Next, the adhesive layer 10 is diced to produce a plurality of semiconductor chips 60 with adhesive pieces, each having a semiconductor chip Wa and adhesive pieces 10a formed by separating the adhesive layer 10 attached to the semiconductor chip Wa. As a method for dicing the adhesive layer 10, for example, a method of expanding (stretching) the dicing film 50 of the dicing-die bonding integrated film 100 under cooling conditions (cooling expansion) can be used. Conventional known apparatus can be used for cooling expansion. The temperature of the cooling conditions may be, for example, -15 to 0°C.

[0118] After performing cooling and expanding, heat shrinking may be performed by heating the peripheral edge of the dicing film 50 with a heater. The heat shrinkage of the heated portion of the dicing film 50 can further expand the calf width between multiple semiconductor chips 60 with adhesive pieces. The heating temperature when heating with the heater may be, for example, 200 to 270°C.

[0119] Subsequent steps such as ultraviolet irradiation, pickup, semiconductor chip bonding, and thermosetting can be carried out in the same manner as in the first embodiment.

[0120] The method for manufacturing a semiconductor device may further include, if necessary, a step of bonding a second semiconductor chip, which has a second semiconductor chip and a second adhesive piece, to the surface of the first semiconductor chip in the first semiconductor chip with adhesive piece bonded to the support member 80, via a second adhesive piece (adhesive piece 10a) from among a plurality of semiconductor chips with adhesive piece bonded to the support member 80. The conditions for thermocompression bonding of the second semiconductor chip with adhesive piece may be the same as the conditions for thermocompression bonding of the first semiconductor chip with adhesive piece in the semiconductor chip bonding step. The second adhesive piece in the second semiconductor chip with adhesive piece bonded to the first semiconductor chip may be heat-cured. The heat-curing conditions for the second adhesive piece may be the same as the conditions for heat-curing the first adhesive piece (adhesive piece 10a) in the first semiconductor chip with adhesive piece bonded to the support member 80.

[0121] A method for manufacturing a semiconductor device may, if necessary, include a step (wire bonding step) of electrically connecting the tip of the terminal portion (inner lead) of a support member to the electrode pad on the semiconductor chip with a bonding wire. Examples of bonding wires include gold wire, aluminum wire, copper wire, etc. The temperature during wire bonding may be in the range of 80 to 250°C or 80 to 220°C. The heating time may be several seconds to several minutes. Wire bonding may be performed by a combination of ultrasonic vibration energy and applied pressure to bond the wire while it is heated within the above temperature range.

[0122] A method for manufacturing a semiconductor device may optionally include a step of sealing a semiconductor chip with a sealing material (sealing step). This step is performed to protect the semiconductor chip or bonding wire mounted on a support member. This step can be performed by molding a sealing resin (sealing resin) in a mold. The sealing resin may be, for example, an epoxy resin. The heat and pressure during sealing embed the support member and residue, preventing delamination due to air bubbles at the adhesive interface.

[0123] The semiconductor device manufacturing method may include, if necessary, a step (post-curing step) to completely cure the sealing resin that is not sufficiently cured in the sealing step. Even if the adhesive piece is not heat-cured in the sealing step, in this step, the adhesive piece can be heat-cured along with the curing of the sealing resin, enabling adhesive fixation. The heating temperature in this step can be appropriately set depending on the type of sealing resin, and may be in the range of 165 to 185°C, for example, and the heating time may be about 0.5 to 8 hours.

[0124] A method for manufacturing a semiconductor device may optionally include a step (heating and melting step) of heating a semiconductor chip with adhesive attached to a support member using a reflow oven. In this step, the resin-encapsulated semiconductor device may be surface-mounted on the support member. Examples of surface mounting methods include reflow soldering, in which solder is supplied onto a printed circuit board in advance, then heated and melted with hot air or the like to perform soldering. Examples of heating methods include hot air reflow and infrared reflow. The heating method may involve heating the entire device or heating a localized area. The heating temperature may be, for example, in the range of 240 to 280°C.

[0125] In one embodiment, the method for manufacturing a semiconductor device includes a step of interposing the above-mentioned film-like adhesive between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

[0126] [Semiconductor Device] A semiconductor device manufactured using a film-like adhesive and a dicing / die bonding integrated film will be described in detail below with reference to the drawings. Note that in recent years, various structures of semiconductor devices have been proposed, and the applications of the film-like adhesive and dicing / die bonding integrated film of this embodiment are not limited to the semiconductor device structure described below.

[0127] Figure 4 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in Figure 4 comprises a semiconductor chip Wa (first semiconductor chip), a support member 80 on which the semiconductor chip Wa is mounted, and an adhesive member 12. The adhesive member 12 is provided between the semiconductor chip Wa and the support member 80 and adheres the semiconductor chip Wa and the support member 80. The adhesive member 12 is a cured product of a film-like adhesive (cured product of adhesive pieces). The connection terminals (not shown) of the semiconductor chip Wa are electrically connected to external connection terminals (not shown) via bonding wires 70, and the semiconductor chip Wa and bonding wires 70 are sealed by a sealing material 92. Solder ball terminals may be formed on the surface of the support member 80 opposite to the surface in contact with the adhesive member 12 for electrical connection to an external substrate (motherboard) (not shown).

[0128] Figure 5 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in Figure 5, the first semiconductor chip Waa (first semiconductor chip) is bonded to a support member 80 on which solder ball terminals 94 are formed by adhesive member 12a (cured film adhesive (cured adhesive piece)), and the second semiconductor chip Wab (second semiconductor chip) is further bonded to the first semiconductor chip Waa by adhesive member 12b (cured film adhesive (cured adhesive piece)). The connection terminals (not shown) of the first semiconductor chip Waa and the second semiconductor chip Wab are electrically connected to external connection terminals via bonding wires 70, and the semiconductor chips Waa, Wab and bonding wires 70 are sealed by a sealing material 92. The semiconductor device 210 shown in Figure 5 can also be described as the semiconductor device 200 shown in Figure 4, further comprising another semiconductor chip (second semiconductor chip) stacked on the surface of the semiconductor chip Wa (first semiconductor chip).

[0129] Figure 6 is a schematic cross-sectional view showing another embodiment of the semiconductor device. The semiconductor device 220 shown in Figure 6 comprises a support member 80 and semiconductor chips Waa (first semiconductor chip), Wab (second semiconductor chip), Wac (third semiconductor chip), Wad (fourth semiconductor chip), Wae (fifth semiconductor chip), Waf (sixth semiconductor chip), Wag (seventh semiconductor chip), and Wah (eighth semiconductor chip) stacked on the support member 80. The four semiconductor chips Waa, Wab, Wac, and Wad are stacked at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction) for connection to connection terminals (not shown) formed on the surface of the support member 80. The four semiconductor chips Wae, Waf, Wag, and Wah, which are stacked on top of them, are stacked in a folded manner at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction) on the opposite side of the four semiconductor chips Waa, Wab, Wac, and Wad for connection to connection terminals (not shown) formed on the surface of the support member 80 (see Figure 6). The semiconductor chip Waa is bonded to the support member 80 by adhesive member 12a (cured film-like adhesive (cured adhesive piece)), and adjacent semiconductor chips are also bonded to each other by adhesive members 12b, 12c, 12d, 12e, 12f, 12g, and 12h (cured film-like adhesive (cured adhesive piece)). The connection terminals (not shown) of the semiconductor chips Waa, Wab, Wac, Wad, Wae, Waf, Wag, and Wah are electrically connected to external connection terminals via bonding wires 70, and the semiconductor chips Waa, Wab, Wac, Wad, Wae, Waf, Wag, and Wah are sealed by a sealing material 92. The semiconductor device 220 shown in Figure 6 can also be described as the semiconductor device 200 shown in Figure 4, further comprising other semiconductor chips (second to eighth semiconductor chips) stacked on the surface of semiconductor chip Wa (first semiconductor chip). The semiconductor device 220 shown in Figure 6 can also be described as having a folded structure in the stacked structure of the semiconductor chips.

[0130] Although a semiconductor device has been described in detail above with respect to embodiments of the present disclosure, the present disclosure is not limited to the above embodiments. For example, Figure 6 illustrates a semiconductor device in which eight semiconductor chips are stacked, but the number of stacked semiconductor chips is not limited thereto. Also, Figure 6 illustrates a semiconductor device in which the semiconductor chips are stacked at positions offset from each other in the lateral direction (a direction perpendicular to the stacking direction), but a semiconductor device in which the semiconductor chips are stacked at positions not offset from each other in the lateral direction may also be used.

[0131] Since the semiconductor devices 200, 210, and 220 are equipped with a cured product of the above-mentioned film-like adhesive as the adhesive member 12, they have excellent heat dissipation properties.

[0132] The present disclosure will be described below in detail based on examples, but the present disclosure is not limited to these examples.

[0133] (Examples 1-7 and Comparative Examples 1-3) [Preparation of Film-like Adhesives] <Preparation of Adhesive Varnish> Cyclohexanone was added to a mixture consisting of component (A) (components (A1) and (A2)) and component (C) in the components and composition ratios (unit: parts by mass) shown in Table 1, and stirred. Then, component (B) was added in the components and composition ratios (unit: parts by mass) shown in Table 1 and stirred, and then components (D) and (E) were added and stirred until each component was homogeneous to prepare the adhesive varnishes of Examples 1-7 and Comparative Examples 1-3. Note that each component shown in Table 1 means the following, and the values ​​shown in Table 1 mean parts by mass of solids.

[0134] (A) Component: Thermosetting resin component (A1) Component: Epoxy resin (A1a) Component: Liquid epoxy resin (A1a-1) EXA-830CRP (product name, manufactured by DIC Corporation, bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq) (A1b) Component: Solid epoxy resin (A1b-1) N-500P-10 (product name, manufactured by DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent: 204 g / eq, softening point: 84°C) (A2) Component: Phenolic resin (A2-1) MEH-7800M (product name, manufactured by UBE Corporation, phenyl aralkyl type phenolic resin, hydroxyl group equivalent: 174 g / eq, softening point: 82°C) (B) Component: Elastomer (B-1) SG-P3 solvent modified product (product name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight-average molecular weight: 800,000, Tg: 12℃) (C) Component: Inorganic filler (C-1) A14-SX-C37 (product name, manufactured by Admatex Co., Ltd., phenylaminosilane surface-treated alumina filler, average particle size: 2.7-3.3 μm) (C-2) A14-SP-C2 (product name, manufactured by Admatex Co., Ltd., phenylsilane surface-treated alumina filler, average particle size: 2.7-3.3 μm) (C-3) A2-SP-C3 (product name, manufactured by Admatex Co., Ltd., phenylsilane surface-treated alumina filler, average particle size: 0.2-0.4 μm) (C-4) AA-03NF (product name, manufactured by Sumitomo Chemical Co., Ltd., alumina filler, average particle size: 0.2-0.4 μm) (C-5) AA-3N (Trade name, manufactured by Sumitomo Chemical Co., Ltd., alumina filler, average particle size: 3.0-4.0 μm) (D) Component: Coupling agent (D-1) A-189 (Trade name, manufactured by Momentive Performance Materials Japan LLC, γ-mercaptopropyltrimethoxysilane) (D-2) Z-6119 (Trade name, manufactured by Dow Toray Industries, Ltd., γ-ureidopropyltriethoxysilane) (E) Component: Curing accelerator (E-1) 2PZ-CN (Trade name, manufactured by Shikoku Chemicals, Ltd., 1-cyanoethyl-2-phenylimidazole)

[0135] <Preparation of Film-like Adhesives> A polyethylene terephthalate (PET) film with a thickness of 38 μm and a release treatment was prepared as a support film, and adhesive varnish was applied to the PET film. The applied adhesive varnish was heated and dried at 90°C for 3 minutes and 110°C for 3 minutes to obtain a laminate comprising the support film and the film-like adhesives (adhesive layers) of Examples 1 to 7 and Comparative Examples 1 to 3, which were in the B-stage state with the respective thicknesses shown in Table 1, provided on the support film. The thickness of the film-like adhesive was adjusted by adjusting the amount of adhesive varnish applied.

[0136] [Evaluation of Film-Like Adhesives] The shear viscosity and thermal conductivity of the obtained film-like adhesives were measured according to the following procedure. In addition, the warpage of the semiconductor chips was evaluated according to the following procedure. The measurement results and evaluation results are shown in Table 1.

[0137] <Measurement of Shear Viscosity at 120°C> Multiple layers of the film-like adhesives from Examples 1-7 and Comparative Examples 1-3 were stacked on a 70°C hot plate using a rubber roll to obtain a laminate with a thickness of 400 μm. The obtained laminate was cut to a size of φ9 mm to prepare a sample for measurement. The sample was mounted on a measuring jig of a rotary viscoelasticity measuring device (ARES-G2, manufactured by T.A. Instrument Japan Co., Ltd.), and the viscoelasticity of the sample was measured under the following conditions. From the measurement results, the viscosity (complex viscosity ratio) at 120°C was read and this was defined as the shear viscosity at 120°C. (Measurement conditions) ・Measuring jig: Parallel plate, aluminum, φ8 mm ・Frequency: 1 Hz ・Heating rate: 5°C / min ・Strain: 5% ・Measurement temperature: 30-180°C

[0138] <Measurement of Thermal Conductivity> (Preparation of Film for Measuring Thermal Conductivity)After heat-curing the film adhesives of Examples 1 to 7 and Comparative Examples 1 to 3 at 110°C for 1 hour and 170°C for 3 hours (C-stage state), the thermal conductivity (35°C) was measured by the following method. First, the film adhesive was cut into a predetermined size, and a plurality of film pieces were prepared so that the thickness would be 300 to 500 μm when laminated. These film pieces were laminated using a rubber roll on a hot plate at 60°C to prepare a laminate with a thickness of 300 to 500 μm. Next, each laminate was heat-cured in a clean oven (manufactured by Espec Corporation) at 110°C for 1 hour and 170°C for 3 hours to obtain a sample in the C-stage state. The obtained sample was cut into 1 cm × 1 cm, and this was used as a film for measuring thermal conductivity, and the thermal conductivity was measured under the following measurement items / conditions. If the thermal conductivity is 1.0 W / (m·K) or more, it can be said that the heat dissipation property of the obtained semiconductor device is excellent.

[0139] (Calculation of Thermal Conductivity) The thermal conductivity λ in the thickness direction of the film for measuring thermal conductivity was calculated by the following formula. The thermal diffusivity α, specific heat Cp, and density ρ were measured by the following methods. A large thermal conductivity λ means better heat dissipation property in a semiconductor device. Thermal conductivity λ (W / (m·K)) = Thermal diffusivity α (mm ２ / s) × Specific heat Cp (J / (g·K)) × Density ρ (g / cm ３ )

[0140] (Measurement of Thermal Diffusivity α) A measurement sample was prepared by blackening both sides of the film for measuring thermal conductivity with graphite spray. Next, for this measurement sample, using the following measurement apparatus and conditions, the thermal diffusivity α was measured by the laser flash method (xenon flash method). - Measurement apparatus: Thermal diffusivity measurement apparatus (manufactured by Netzsch Japan Co., Ltd., product name: LFA467 HyperFlash) - Pulse width of pulsed light irradiation: 0.08 ms - Irradiation voltage of pulsed light irradiation: 180 V - Treatment of measurement sample: Blackening both sides of the film for measuring thermal conductivity with graphite spray - Measurement ambient temperature: 35°C

[0141] (Measurement of Specific Heat Cp (35°C)) The specific heat Cp (35°C) of the thermal conductivity measurement film was determined by differential scanning calorimetry (DSC) using the following measuring device under the following conditions: • Measuring device: Differential scanning calorimeter (manufactured by Rigaku Corporation, product name: DSC8231) • Reference material: Sapphire • Heating rate: 3°C / min • Heating temperature range: 25-75°C

[0142] (Measurement of Density ρ) The density ρ of the thermal conductivity measurement film was measured by the Archimedes method using the following measuring device under the following conditions: • Measuring device: Electronic hydrometer (Alpha Mirage Co., Ltd., product name: EW-300SG) • Water temperature: 25°C

[0143] <Evaluation of Semiconductor Chip Warpage> First, the film-like adhesives of Examples 1 to 7 and Comparative Examples 1 to 3 were each bonded to a dicing tape (Lintec Corporation, E-3135KN) as a dicing film, and integrated dicing and die bonding films of Examples 1 to 7 and Comparative Examples 1 to 3 were prepared, comprising a base layer, an adhesive layer, and an adhesive layer consisting of the film-like adhesive in this order.

[0144] Separately, silicon chips were fabricated as semiconductor chips using the following procedure. First, to create conditions that would easily cause warping during evaluation, a silicon nitride (SiN) film with a thickness of 400 nm was deposited on the circuit side surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm) using plasma CVD. Next, a backgrind tape was attached to the circuit side surface, and a modified region was formed inside the silicon wafer under the following irradiation conditions. Subsequently, the side of the silicon wafer opposite to the backgrind tape was ground (polished) using a grinder polisher (DGP8761, manufactured by DISCO Corporation) until the silicon wafer thickness was 40 μm, and individual silicon chips were formed. (Irradiation conditions) ・Stealth dicing device: DFL7361 (manufactured by Disco Corporation) ・Laser oscillator type: Semiconductor laser-pumped Q-switched solid-state laser ・Wavelength: 1342 nm ・Frequency: 60 kHz ・Output: 0.8 W ・Number of passes: 2 ・Chip size: 6 mm x 12 mm ・Dicing speed: 800 mm / sec

[0145] Next, multiple individual silicon chips, which had been placed on the backgrind tape, were attached to the adhesive layer of the previously prepared dicing-die bonding integrated film under the following attachment conditions. After attaching the silicon chips, the backgrind tape was peeled off. (Attachment conditions) ・Attachment device: DFM2800 (Disco Corporation) ・Attachment temperature: 70℃ ・Attachment speed: 10 mm / s ・Attachment tension level: Level 1 ・F / R coefficient: 40

[0146] Next, using a die separator (DDS2300, manufactured by DISCO Corporation), the dicing tape was stretched under the following cooling and expanding conditions, thereby separating the adhesive layer. Subsequently, the dicing tape was shrunk under the following heating (heat shrinking) conditions. (Cooling and expanding conditions) ・Cooling temperature: -15℃ ・Cooling time: 80 seconds ・Push-up amount: 11 mm ・Push-up speed: 200 mm / sec ・Holding time after push-up: 0 seconds (Heating (heat shrinking) conditions) ・Stage temperature: 30℃ ・Waiting time: 15 seconds ・Dryer temperature: 220℃ ・Distance from tape: 20 mm ・Rotation speed: 5° / sec ・Push-up amount: 7 mm ・Push-up speed: 30 mm / sec ・Tape cooling time: 10 seconds

[0147] Subsequently, the silicone tip with adhesive residue was picked up using a die bonder (DB-830Plus+, manufactured by Fasford Technology Co., Ltd.) and heat-pressed onto the support member. Pickup was performed under the following pickup conditions. Heat-pressure bonding was performed under the following heat-pressure bonding conditions. (Pickup conditions) ・Pickup tool: 9 pins ・Collet size: 6 mm x 12 mm ・Needle push-up height: 250 μm ・Needle speed: 1 mm / s ・Die bonding mode: Parallel (Heat-pressure bonding conditions) ・Temperature: 130 °C ・Pressure: 0.3 MPa (surface pressure) ・Time: 1 second

[0148] Six evaluation samples were prepared by sequentially laminating similar adhesive-attached silicon chips onto a support member under the same thermocompression bonding conditions, creating a four-layer stacked structure (4-stack) for each evaluation sample. Subsequently, the obtained evaluation samples were heated under a pressure of 0.7 MPa at 110°C for 1 hour, and then at 170°C for 3 hours to cure each adhesive layer. The six cured four-layer stacked structures (4-stack) were observed for delamination at the interface between the silicon chip and the cured adhesive layer using an ultrasonic flaw detection microscope (SAM) (IS-350, manufactured by Insight Co., Ltd.), and evaluated based on the observation results according to the following criteria: A: No delamination was observed in any of the six samples (0 / 6 delamination). B: Delamination was observed in one of the six samples (1 / 6 delamination). C: Delamination was observed in two or three of the six samples (2 / 6 to 3 / 6 delamination). D: Delamination was observed in 4 or 5 out of 6 samples (4 / 6 to 5 / 6 delamination). E: Delamination was observed in all 6 samples (6 / 6 delamination).

[0149]

[0150] As shown in Table 1, the film-like adhesives of Examples 1 to 7, which had a shear viscosity of 4,500 to 24,000 Pa·s at 120°C, exhibited sufficiently high thermal conductivity and effectively suppressed warping of semiconductor chips. In contrast, the film-like adhesives of Comparative Examples 1 and 2, which had a shear viscosity of less than 4,500 Pa·s at 120°C, did not adequately suppress warping of semiconductor chips. The film-like adhesive of Comparative Example 3, which had a shear viscosity exceeding 24,000 Pa·s at 120°C, did not exhibit sufficient thermal conductivity. This is thought to be due to excessively high shear viscosity and insufficient fluidity. These results confirm that the film-like adhesive of this disclosure can form a cured product with excellent thermal conductivity and effectively suppress warping of semiconductor chips.

[0151] 10...Adhesive layer, 10A...Film-like adhesive, 10a...Adhesive piece, 10ac...Cured adhesive piece, 12, 12a, 12b, 12c, 12d, 12e, 12f, 12g, 12h...Adhesive members, 20...Support film, 30, 30a...Adhesive layer, 40...Base layer, 50...Dicing film, 60...Semiconductor chip with adhesive piece, 70...Bonding wire, 72...Needle, 74...Suction collet, 80...Support member, 92...Sealing material, 94...Solder ball terminal, 100...Dicing / die bonding integrated film, 200, 210, 220...Semiconductor equipment, W...Semiconductor wafer, Wa, Waa, Wab, Wac, Wad, Wae, Waf, Wag, Wah...Semiconductor chip.

Claims

1. A film-like adhesive comprising a thermosetting resin component, an elastomer, and an inorganic filler, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 2000 W / (m·K) at 20°C, the inorganic filler content is 70% by mass or more based on the total amount of the film-like adhesive, and the shear viscosity at 120°C is 4500 to 24000 Pa·s.

2. The film-like adhesive according to claim 1, wherein the inorganic filler is composed of a substance having a thermal conductivity of 10 to 600 W / (m·K) at 20°C.

3. The film-like adhesive according to claim 1, wherein the inorganic filler is composed of at least one substance selected from the group consisting of aluminum oxide, zinc oxide, magnesium oxide, boron nitride, aluminum nitride, silicon nitride, and silicon carbide.

4. The film-like adhesive according to any one of claims 1 to 3, wherein the thermosetting resin component comprises an epoxy resin and a phenolic resin.

5. The film-like adhesive according to claim 4, wherein the epoxy resin comprises a liquid epoxy resin that is liquid at 30°C and a solid epoxy resin that is solid at 30°C.

6. The film-like adhesive according to any one of claims 1 to 3, wherein the average particle size of the inorganic filler is 0.1 to 5 μm.

7. A film-like adhesive according to any one of claims 1 to 3, wherein the thermal conductivity at 35°C after heat curing at 110°C for 1 hour and at 170°C for 3 hours is 1.0 W / (m·K) or more.

8. A film-like adhesive according to any one of claims 1 to 3, wherein the thickness is 30 μm or less.

9. A dicing-die bonding integrated film comprising, in this order, a base layer, an adhesive layer, and an adhesive layer made of a film-like adhesive according to any one of claims 1 to 3.

10. A semiconductor device comprising: a first semiconductor chip; a support member on which the first semiconductor chip is mounted; and a cured product of a film-like adhesive according to any one of claims 1 to 3, provided between the first semiconductor chip and the support member to bond the first semiconductor chip and the support member.

11. The semiconductor device according to claim 10, further comprising a second semiconductor chip, different from the first semiconductor chip, stacked on the surface of the first semiconductor chip.

12. A method for manufacturing a semiconductor device, comprising: a step of manufacturing a plurality of adhesive-piece semiconductor chips, each having a semiconductor chip and an adhesive piece formed by the individualization of the adhesive layer attached to the semiconductor chip, on the adhesive layer of the dicing-die bonding integrated film according to claim 9; and a step of bonding a first semiconductor chip having a first adhesive piece and a first adhesive piece to a support member via the first adhesive piece.

13. A method for manufacturing a semiconductor device according to claim 12, further comprising the step of thermally curing the first adhesive piece in the semiconductor chip with the first adhesive piece at a temperature of 60 to 200°C for 30 minutes to 5 hours.

14. The method for manufacturing a semiconductor device according to claim 12, further comprising the step of bonding a second semiconductor chip having a second semiconductor chip and a second adhesive piece, from among the plurality of semiconductor chips with adhesive pieces, to the surface of the first semiconductor chip with adhesive piece bonded to the support member, via the second adhesive piece.

15. A method for manufacturing a semiconductor device according to claim 14, further comprising the step of thermally curing the first adhesive piece in the first adhesive piece-attached semiconductor chip and the second adhesive piece in the second adhesive piece-attached semiconductor chip at a temperature of 60 to 200°C for 30 minutes to 5 hours.

16. A method for manufacturing a semiconductor device, comprising the step of interposing a film-like adhesive according to any one of claims 1 to 3 between a first semiconductor chip and a support member, or between a first semiconductor chip and a second semiconductor chip different from the first semiconductor chip, to bond the first semiconductor chip and the support member, or the first semiconductor chip and the second semiconductor chip.

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