Building insulating glass having frequency selectivity

Abstract

Building insulating glass having frequency selectivity is provided. The insulating glass comprises a first glass layer and an insulating metal thin film layer disposed on one surface of the first glass layer. Here, the insulating metal thin film layer includes a plurality of unit cells arranged in a plane of the insulating metal thin film layer, and at least some of the unit cells include: a grid pattern including a plurality of longitudinal slits and a plurality of transverse slits; an inner square slit disposed at a center portion of the grid pattern; and an outer square slit which encompasses the inner square slit and which is spaced apart from the inner square slit.

Description

Architectural insulating glass with frequency selectivity

[0001] The present invention relates to insulating glass for construction, and more specifically, to insulating glass for construction having frequency selectivity.

[0002] In modern commercial and residential construction, Low-E (Low-emissivity) glass is widely used for energy saving purposes. Low-E glass is a glass surface coated with an ultra-thin metal layer to reduce heat loss; because it enhances indoor temperature maintenance and energy saving effects, it is particularly widely used as a window or building exterior material. In this regard, Fig. 1 is a conceptual diagram of Low-E glass. As shown in Fig. 1, Low-E glass can prevent indoor heating from escaping to the outside by reflecting solar rays from the outside or allowing visible light to pass through, while ensuring visibility by providing a Low-E coating on at least one surface of the glass window. In other words, the core technology of Low-E glass lies in reducing the loss of indoor heat to the outside through a heat-reflecting metal coating, and generally, such a coating can be composed of silver (Ag) or a metal oxide layer. The low-E coating layer reflects infrared wavelengths from the sun, preventing heat from entering the room in the summer and preventing heat from escaping the room in the winter.

[0003] However, while the introduction of a metal thin film layer in low-e glass offers excellent thermal insulation, it has the disadvantage of interfering with the transmission and reception of radio waves, which are a core element of modern information and communication technology. As illustrated in Fig. 1, the low-e coating can interfere with the transmission of signals from a base station to an indoor wireless terminal, and conversely, it can interfere with the transmission of signals from an indoor wireless terminal to a base station. This may be attributed to the fact that the low-e coating layer also reflects wireless signals.

[0004] To address these issues, removing a portion of the metal thin film layer of insulating glass could be considered; however, since the removal of this layer results in a degradation of thermal insulation performance, it was difficult to simultaneously satisfy both radio wave transmittance and thermal insulation performance. Furthermore, modern wireless communication systems operate in a wide variety of ways, and the frequency bands used by each system are widely distributed; consequently, it is not easy to guarantee radio wave transmittance across various frequencies, and there may even be situations where security is required by shielding radio waves for specific frequency bands.

[0005] One objective of the present invention for solving the aforementioned problems is to provide an architectural insulating glass having frequency selectivity capable of controlling signal transmittance for a specific frequency band while maintaining thermal insulation performance by minimizing the etching area of ​​the insulating metal thin film layer by forming an appropriate pattern on the insulating metal thin film layer provided in the architectural insulating glass.

[0006] Another objective of the present invention for solving the aforementioned problems is to provide an architectural insulating glass having frequency selectivity that allows for the free control of the transmission, absorption, or shielding of radio waves according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass.

[0007] However, the problem to be solved by the present invention is not limited thereto and may be expanded in various ways without departing from the spirit and scope of the present invention.

[0008] A thermal insulating glass for architecture having frequency selectivity according to an embodiment of the present invention for solving the aforementioned problems comprises: a first glass layer; and a thermal insulating metal thin film layer disposed on one surface of the first glass layer; wherein the thermal insulating metal thin film layer comprises a plurality of unit cells arranged within the plane of the thermal insulating metal thin film layer, and at least some of the unit cells may comprise a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits; and a circular slit disposed at the center of the grid pattern.

[0009] According to one aspect, the plurality of longitudinal slits may include: a longitudinal center slit located at the transverse center of the unit cell; a first longitudinal additional slit spaced apart in a first transverse direction of the longitudinal center slit; a second longitudinal additional slit spaced apart in a second transverse direction of the longitudinal center slit; a first longitudinal outer slit spaced apart in a first transverse direction of the first longitudinal additional slit; and a second longitudinal outer slit spaced apart in a second transverse direction of the second longitudinal additional slit.

[0010] According to one aspect, the plurality of transverse slits may include: a transverse center slit located at the longitudinal center of the unit cell; a first transverse additional slit spaced apart in a first longitudinal direction of the transverse center slit; a second transverse additional slit spaced apart in a second longitudinal direction of the transverse center slit; a first transverse outer slit spaced apart in a first longitudinal direction of the first transverse additional slit; and a second transverse outer slit spaced apart in a second longitudinal direction of the second transverse additional slit.

[0011] According to one aspect, the first longitudinal outer slit, the second longitudinal outer slit, the first transverse outer slit, and the second transverse outer slit may be double slits having a predetermined spacing.

[0012] According to one aspect, each of the longitudinal center slit and the transverse center slit may be divided into two partial slits by having a short portion having a predetermined length in the central part of the unit cell.

[0013] According to one aspect, the circular slit may be formed to be in contact with the end portions in the direction of the short section of the longitudinal center slit and the transverse center slit.

[0014] According to one aspect, the grid pattern may be configured to form a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of the plurality of grid patches may have different sizes from each other.

[0015] According to one aspect, the transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit is four times the spacing between the double slits of the first longitudinal outer slit, the transverse length of the grid patch formed between the first longitudinal outer slit and the first longitudinal additional slit is six times the spacing between the double slits of the first longitudinal outer slit, and the transverse length of the unit cell may be 40 times the spacing between the double slits of the first longitudinal outer slit.

[0016] According to one aspect, the diameter of the circular slit may be four times the spacing between the double slits of the first longitudinal outer slit.

[0017] According to one aspect, the unit cell is square and has a side length of 1 mm, the line width of the plurality of longitudinal slits and the plurality of transverse slits is 10 μm, the line width of the circular slit is 10 μm, and the thickness of the insulating metal thin film layer may be 10 to 40 μm.

[0018]

[0019] A thermal insulating glass for architecture having frequency selectivity according to another embodiment of the present invention for solving the aforementioned problems may include: a first glass layer; and a thermal insulating metal thin film layer disposed on one surface of the first glass layer. Herein, the thermal insulating metal thin film layer may include a plurality of unit cells arranged within a plane of the thermal insulating metal thin film layer, and at least some of the unit cells may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits; an inner circular slit disposed at the center of the grid pattern; and an outer circular slit surrounding the inner circular slit and spaced apart from the inner circular slit.

[0020] According to one aspect, the plurality of longitudinal slits may include: a longitudinal center slit located at the transverse center of the unit cell; a first longitudinal additional slit spaced apart in a first transverse direction of the longitudinal center slit; a second longitudinal additional slit spaced apart in a second transverse direction of the longitudinal center slit; a first longitudinal outer slit spaced apart in a first transverse direction of the first longitudinal additional slit; and a second longitudinal outer slit spaced apart in a second transverse direction of the second longitudinal additional slit.

[0021] According to one aspect, the plurality of transverse slits may include: a transverse center slit located at the longitudinal center of the unit cell; a first transverse additional slit spaced apart in a first longitudinal direction of the transverse center slit; a second transverse additional slit spaced apart in a second longitudinal direction of the transverse center slit; a first transverse outer slit spaced apart in a first longitudinal direction of the first transverse additional slit; and a second transverse outer slit spaced apart in a second longitudinal direction of the second transverse additional slit.

[0022] According to one aspect, the first longitudinal outer slit, the second longitudinal outer slit, the first transverse outer slit, and the second transverse outer slit may be double slits having a predetermined spacing.

[0023] According to one aspect, each of the longitudinal center slit and the transverse center slit may be divided into two partial slits by having a short portion having a predetermined length in the central part of the unit cell.

[0024] According to one aspect, the inner circular slit is formed to be in contact with the end portion in the direction of the short section of the longitudinal center slit and the transverse center slit, and the outer circular slit may be formed to be in contact with the first longitudinal additional slit, the second longitudinal additional slit, the first transverse additional slit, and the second transverse additional slit.

[0025] According to one aspect, the grid pattern may be configured to form a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of the plurality of grid patches may have different sizes from each other.

[0026] According to one aspect, the transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit is four times the spacing between the double slits of the first longitudinal outer slit, the transverse length of the grid patch formed between the first longitudinal outer slit and the first longitudinal additional slit is six times the spacing between the double slits of the first longitudinal outer slit, and the transverse length of the unit cell may be 40 times the spacing between the double slits of the first longitudinal outer slit.

[0027] According to one aspect, the diameter of the inner circular slit may be four times the spacing between the double slits of the first longitudinal outer slit, and the diameter of the outer circular slit may be eight times the spacing between the double slits of the first longitudinal outer slit.

[0028] According to one aspect, the unit cell is square and has a side length of 1 mm, the width of the plurality of longitudinal slits and the plurality of transverse slits is 10 μm, the width of the inner circular slit is 10 μm, the width of the outer circular slit is 20 μm, and the thickness of the insulating metal thin film layer may be 10 to 40 μm.

[0029]

[0030] A thermal insulating glass for architecture having frequency selectivity according to another embodiment of the present invention for solving the aforementioned problems may include: a first glass layer; and a thermal insulating metal thin film layer disposed on one surface of the first glass layer. The thermal insulating metal thin film layer may include a plurality of unit cells arranged within a plane of the thermal insulating metal thin film layer, and at least some of the unit cells may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits; an inner square slit disposed at the center of the grid pattern; and an outer square slit surrounding the inner square slit and spaced apart from the inner square slit.

[0031] According to one aspect, the plurality of longitudinal slits may include: a longitudinal center slit located at the transverse center of the unit cell; a first longitudinal additional slit spaced apart in a first transverse direction of the longitudinal center slit; a second longitudinal additional slit spaced apart in a second transverse direction of the longitudinal center slit; a first longitudinal outer slit spaced apart in a first transverse direction of the first longitudinal additional slit; and a second longitudinal outer slit spaced apart in a second transverse direction of the second longitudinal additional slit.

[0032] According to one aspect, the plurality of transverse slits may include: a transverse center slit located at the longitudinal center of the unit cell; a first transverse additional slit spaced apart in a first longitudinal direction of the transverse center slit; a second transverse additional slit spaced apart in a second longitudinal direction of the transverse center slit; a first transverse outer slit spaced apart in a first longitudinal direction of the first transverse additional slit; and a second transverse outer slit spaced apart in a second longitudinal direction of the second transverse additional slit.

[0033] According to one aspect, the first longitudinal outer slit, the second longitudinal outer slit, the first transverse outer slit, and the second transverse outer slit may be double slits having a predetermined spacing.

[0034] According to one aspect, each of the longitudinal center slit and the transverse center slit may be divided into two partial slits by having a short portion having a predetermined length in the central part of the unit cell.

[0035] According to one aspect, the inner square slit is formed to be in contact with the end portion in the direction of the short section of the longitudinal center slit and the transverse center slit, and the outer square slit may be formed in the inner area of ​​the square formed by the first longitudinal additional slit, the second longitudinal additional slit, the first transverse additional slit, and the second transverse additional slit.

[0036] According to one aspect, the grid pattern may be configured to form a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of the plurality of grid patches may have different sizes from each other.

[0037] According to one aspect, the transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit is four times the spacing between the double slits of the first longitudinal outer slit, the transverse length of the grid patch formed between the first longitudinal outer slit and the first longitudinal additional slit is six times the spacing between the double slits of the first longitudinal outer slit, and the transverse length of the unit cell may be 40 times the spacing between the double slits of the first longitudinal outer slit.

[0038] According to one aspect, the length of one side of the inner square slit may be twice the spacing between the double slits of the first longitudinal outer slit, and the length of one side of the outer square slit may be four times the spacing between the double slits of the first longitudinal outer slit.

[0039] According to one aspect, the unit cell is square and has a side length of 1 mm, the line width of the plurality of longitudinal slits and the plurality of transverse slits is 10 μm, the line width of the inner square slit is 10 μm, the line width of the outer square slit is 20 μm, and the thickness of the insulating metal thin film layer may be 10 to 40 μm.

[0040]

[0041] A thermal insulating glass for architecture having frequency selectivity according to another embodiment of the present invention for solving the aforementioned problems may include: a first glass layer; and a thermal insulating metal thin film layer disposed on one surface of the first glass layer. Herein, the thermal insulating metal thin film layer may include a plurality of unit cells arranged within a plane of the thermal insulating metal thin film layer, and at least some of the unit cells may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits; and a circular slit disposed at the center of the grid pattern to intersect with at least one of the plurality of longitudinal slits and at least one of the plurality of transverse slits.

[0042] According to one aspect, the plurality of longitudinal slits may include: a longitudinal center slit located at the transverse center of the unit cell; a first longitudinal additional slit spaced apart in a first transverse direction of the longitudinal center slit; and a second longitudinal additional slit spaced apart in a second transverse direction of the longitudinal center slit.

[0043] According to one aspect, the plurality of transverse slits may include: a transverse center slit located at the longitudinal center of the unit cell; a first transverse additional slit spaced apart in a first longitudinal direction of the transverse center slit; and a second transverse additional slit spaced apart in a second longitudinal direction of the transverse center slit.

[0044] According to one aspect, the first longitudinal additional slit, the second longitudinal additional slit, the first transverse additional slit, and the second transverse additional slit may be double slits having a predetermined spacing.

[0045] According to one aspect, each of the longitudinal center slit and the transverse center slit may be divided into two partial slits by having a short portion having a predetermined length in the central part of the unit cell.

[0046] According to one aspect, the circular slit is formed to intersect the longitudinal center slit and the transverse center slit at a position spaced apart from the center of the unit cell than the shorting portion of the longitudinal center slit and the transverse center slit, and the circular slit may be formed in the inner area of ​​the rectangle formed by the first longitudinal additional slit, the second longitudinal additional slit, the first transverse additional slit, and the second transverse additional slit.

[0047] According to one aspect, the grid pattern may be configured to form a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of the plurality of grid patches may have different sizes from each other.

[0048] According to one aspect, the unit cell is square and has a side length of 1 mm, the line width of the plurality of longitudinal slits and the plurality of transverse slits is 10 μm, the line width of the circular slit is 40 μm, and the thickness of the insulating metal thin film layer may be 10 to 40 μm.

[0049]

[0050] A thermal insulating glass for architecture having frequency selectivity according to another embodiment of the present invention for solving the aforementioned problems may include: a first glass layer; and a thermal insulating metal thin film layer disposed on one surface of the first glass layer. Herein, the thermal insulating metal thin film layer includes a plurality of square-shaped unit cells arranged within the plane of the thermal insulating metal thin film layer, and at least some of the unit cells may include: an inner square slit disposed at the center of the unit cell; an outer square slit disposed around the inner square slit and spaced apart from the inner square slit; and a plurality of T-shaped slits disposed at the center of each side of the unit cell.

[0051] According to one aspect, the T-shaped slit can be combined with the T-shaped slit of an adjacent unit cell to form a cross slit with the same longitudinal length and transverse length.

[0052] According to one aspect, the T-shaped slit may include an edge slit positioned adjacent to the center of each side of the unit cell; and a protruding slit extending from the center of the edge slit toward the center of the unit cell.

[0053] According to one aspect, the line width of the protruding slit may be twice the line width of the edge slit.

[0054] According to one aspect, the line width of the inner square slit may be the same as the line width of the edge slit.

[0055] According to one aspect, the line width of the outer square slit may be the same as the line width of the protruding slit.

[0056] According to one aspect, the length of one side of the inner square slit may be formed shorter than the length of the edge slit, and the length of one side of the outer square slit may be formed longer than the length of the edge slit.

[0057] According to one aspect, the length of one side of the unit cell may be 10 times the length of one side of the inner square slit, the length of one side of the outer square slit may be 5 times the length of one side of the inner square slit, and the length of the edge slit may be 1.5 times the length of one side of the inner square slit.

[0058] According to one aspect, the length of one side of the unit cell is 1 mm, the line width of the inner square slit is 10 µm, the line width of the edge slit is 10 µm, the line width of the outer square slit is 20 µm, the line width of the protruding slit is 20 µm, and the thickness of the insulating metal thin film layer may be 10 to 40 µm.

[0059] The disclosed technology may have the following effects. However, this does not mean that a specific embodiment must include all of the following effects or only the following effects; therefore, the scope of the rights of the disclosed technology should not be understood as being limited by this.

[0060] According to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, by forming an appropriate pattern on the insulating metal thin film layer provided in the architectural insulating glass, the etching area of ​​the insulating metal thin film layer is minimized, thereby allowing the transmittance of a signal for a specific frequency band to be controlled while maintaining insulating performance.

[0061] In addition, according to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, the transmission, absorption, or shielding of radio waves can be freely controlled according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass.

[0062] Furthermore, the architectural insulating glass having frequency selectivity according to the embodiments of the present invention can be designed so that the external difference between the pattern for transmitting a specific frequency and the pattern for absorbing or shielding it is minimal, thereby making it impossible to visually determine which frequency the insulating glass is intended to transmit or which frequency it is intended to shield. Accordingly, it has the advantageous effect of further enhancing the security of buildings equipped with insulating glass.

[0063] Figure 1 is a conceptual diagram of Low-E glass.

[0064] Figure 2 shows an exemplary double-layer structure of Low-E glass.

[0065] Figure 3 shows the S-parameter measurement results according to single Low-E glass.

[0066] Figure 4 shows the S-parameter measurement results according to double low-e glass.

[0067] FIG. 5 shows an exemplary structure of an insulating glass for construction having frequency selectivity according to one embodiment of the present invention.

[0068] Figure 6 shows the arrangement of unit cells within the plane of the insulating metal thin film layer of Figure 5.

[0069] FIG. 7 illustrates a grid pattern of a unit cell according to one embodiment of the present invention.

[0070] Figure 8 shows the S-parameter measurement results according to the pattern of Figure 7.

[0071] FIG. 9 illustrates a grid-circular slit pattern of a unit cell according to one embodiment of the present invention.

[0072] Figure 10 shows the results of S-parameter measurements in a broadband frequency range according to the pattern of Figure 9.

[0073] Figure 11 shows the results of S-parameter measurements in the partial frequency range according to the pattern of Figure 9.

[0074] FIG. 12 illustrates a grid-double circular slit pattern of a unit cell according to one embodiment of the present invention.

[0075] Figure 13 shows the results of S-parameter measurements in a broadband frequency range according to the pattern of Figure 12.

[0076] Figure 14 shows the results of S-parameter measurements in the partial frequency range according to the pattern of Figure 12.

[0077] FIG. 15 illustrates a grid-double square slit pattern of a unit cell according to one embodiment of the present invention.

[0078] Figure 16 shows the results of S-parameter measurements in a broadband frequency range according to the pattern of Figure 15.

[0079] Figure 17 shows the results of S-parameter measurements in the partial frequency range according to the pattern of Figure 15.

[0080] FIG. 18 illustrates a grid-cross circular slit pattern of a unit cell according to one embodiment of the present invention.

[0081] Figure 19 shows the results of S-parameter measurements in the partial frequency range according to the pattern of Figure 18.

[0082] FIG. 20 illustrates a double square-cross slit pattern of a unit cell according to one embodiment of the present invention.

[0083] Figure 21 shows the results of S-parameter measurements in the partial frequency range according to the pattern of Figure 20.

[0084] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail.

[0085] However, this is not intended to limit the invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0086] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. Such terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0087] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0088] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" are intended to specify the presence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0089] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0090] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings. In order to facilitate an overall understanding of the present invention, the same reference numerals are used for identical components in the drawings, and redundant descriptions of identical components are omitted.

[0091]

[0092] outline

[0093] As mentioned above, Low-E (Low-emissivity) glass, or low-emissivity glass, is widely used for energy saving purposes in modern commercial and residential construction. Low-E glass is a glass surface coated with an ultra-thin metal layer to reduce heat release; because it enhances indoor temperature maintenance and energy saving effects, it is particularly widely used as a window or building exterior material. In this regard, Fig. 1 is a conceptual diagram of Low-E glass. As shown in Fig. 1, Low-E glass can prevent indoor heating from escaping to the outside by reflecting solar rays from the outside or allowing visible light to pass through, while ensuring visibility by providing a Low-E coating on at least one surface of the glass window. In other words, the core technology of Low-E glass lies in reducing the loss of indoor heat to the outside through a heat-reflecting metal coating, and generally, such a coating can be composed of silver (Ag) or a metal oxide layer. The low-E coating layer reflects infrared wavelengths from the sun, preventing heat from entering the room in the summer and preventing heat from escaping the room in the winter.

[0094] FIG. 2 illustrates an exemplary double-layer structure of low-e glass. As illustrated in FIG. 2, architectural insulating glass having frequency selectivity according to embodiments of the present invention may be configured to have a double-layer structure. For example, the double-layer structure may include an outer glass (10) and an inner glass (20), and may be configured to insert a spacer (31) between the outer glass and the inner glass and secure it with a sealant (33). An air layer may be disposed between the outer glass (10) and the inner glass (20), and the air layer may be filled with ordinary air or argon (Ar).

[0095] According to one aspect, a low-e coating may be provided on the inner surface (11) of the outer glass (10) and / or the inner surface (21) of the inner glass (20), but is not limited thereto. As illustrated exemplarily in FIG. 5, the architectural insulating glass (1000) having frequency selectivity according to an embodiment of the present invention may be described below as having a first glass layer (100) and a metal thin film layer (200). However, this is merely for convenience of explanation, and the architectural insulating glass having frequency selectivity according to embodiments of the present invention may have a plurality of glass layers, such as a multilayer structure as illustrated in FIG. 2, for example, and an insulating metal thin film layer may be provided on at least one of such glass layers. In addition, although the architectural insulating glass having frequency selectivity according to the embodiments of the present invention is described as having an insulating metal thin film layer, the technical concept of the present invention is not limited to having only an insulating metal thin film layer, and it should be understood that an embodiment having a low-E coating layer comprising a plurality of layers, such as a metal thin film layer, a dielectric layer, and a coating layer, is included in the technical concept of the present invention.

[0096]

[0097] Meanwhile, while the introduction of a metal thin film layer in low-e glass offers excellent thermal insulation, it has the disadvantage of interfering with the transmission and reception of radio waves, which are a core element of modern information and communication technology. As illustrated in Fig. 1, the low-e coating can interfere with the transmission of signals from a base station to an indoor wireless terminal, and conversely, it can interfere with the transmission of signals from an indoor wireless terminal to a base station. This may be attributed to the fact that the low-e coating layer also reflects wireless signals.

[0098] FIG. 3 shows the S-parameter measurement results for single Low-E glass, and FIG. 4 shows the S-parameter measurement results for double Low-E glass. Samples #1 to #4 in FIG. 3 and samples #5 to #6 in FIG. 4 represent various commercially available Low-E glass models. S 21 Based on the results of parameter measurements, the basic transmission performance of Low-E glass was verified. It was confirmed that both single Low-E glass with a single Low-E coating layer and double Low-E glass with multiple Low-E coating layers exhibit a propagation loss of approximately 20 dB to 30 dB, although varying slightly depending on the frequency band, as illustrated in FIGS. 3 and 4. In other words, even if a signal of 100 dB reaches a building from the outside, only about 70 dB of signal is received indoors, resulting in a significant propagation loss of more than one-thousandth. To resolve the resulting dead zones, the number of base stations allocated to buildings is increased. This not only creates cost issues for expanding communication infrastructure but also leads to problems where energy consumption and carbon emissions increase due to the Low-E glass introduced for energy saving purposes.

[0099] In other words, Low-E glass has a multilayer thin coating consisting of metal and dielectric layers, which is visually transparent in the visible light band but has the characteristic of reflecting heat, while also having the problem of attenuating signals in wireless communication bands such as RF signals.

[0100] To address these issues, removing a portion of the metal thin film layer of insulating glass could be considered; however, since the removal of this layer results in a degradation of thermal insulation performance, it was difficult to simultaneously satisfy both radio wave transmittance and thermal insulation performance. Furthermore, modern wireless communication systems operate in a wide variety of ways, and the frequency bands used by each system are widely distributed; consequently, it is not easy to guarantee radio wave transmittance across various frequencies, and there may even be situations where security is required by shielding radio waves for specific frequency bands.

[0101]

[0102] The present invention is intended to solve such problems, and according to embodiments of the present invention, it is possible to provide an insulating glass for architecture having frequency selectivity that improves or weakens signals in a specific frequency band by using a Frequency Selective Surface (FSS) on the coating layer of Low-E glass, for example.

[0103] For example, according to an architectural insulating glass having frequency selectivity according to one embodiment of the present invention, by forming an appropriate pattern on an insulating metal thin film layer provided in the architectural insulating glass, the etching area of ​​the insulating metal thin film layer is minimized, thereby allowing the transmittance of a signal for a specific frequency band to be controlled while maintaining insulating performance.

[0104] Furthermore, according to the architectural insulating glass having frequency selectivity according to one embodiment of the present invention described above, the transmission, absorption, or shielding of radio waves can be freely controlled according to a specific frequency band by forming a pattern of an insulating metal thin film layer provided in the architectural insulating glass. That is, it is possible to transmit signals of a certain frequency band better than conventional low-E glass, and to absorb or shield signals of other frequency bands so that they are transmitted less well than conventional low-E glass. In other words, the architectural insulating glass having frequency selectivity according to an embodiment of the present invention can have discriminability or selectivity for signals of a specific frequency. For example, it is possible to discriminate according to the type of communication system, such as transmitting Wi-Fi signals but not transmitting 3GPP wireless communication signals, and it is also possible to discriminate signals according to the network operator, such as transmitting signals from a first carrier but not transmitting signals from a second carrier. In any case, the pattern provided on the metal thin film layer can be designed so that the etching area of ​​the insulating metal thin film layer is minimized, thereby enabling both frequency selectivity and thermal insulation.

[0105] Furthermore, the architectural insulating glass having frequency selectivity according to the embodiments of the present invention can be designed so that the external difference between the pattern for transmitting a specific frequency and the pattern for absorbing or shielding it is minimal, thereby making it impossible to visually determine which frequency the insulating glass is intended to transmit or which frequency it is intended to shield. Accordingly, it has the advantageous effect of further enhancing the security of buildings equipped with insulating glass.

[0106] More specifically, the need for shielding wireless signals in specific frequency bands is also emerging in various ways, such as for defense against EMP attacks and the establishment of security systems. According to the architectural insulating glass equipped with frequency selectivity in accordance with an embodiment of the present invention, it is possible to configure it so that signals in a specific frequency band are shielded more effectively than in general low-E glass through the pattern design of a metal thin film layer. Furthermore, it is possible to design patterns for shielding a specific frequency band, patterns for shielding another frequency band, or patterns designed to facilitate the transmission of wireless signals, so that they have only minute external differences from one another. Therefore, even if a building equipped with architectural insulating glass equipped with frequency selectivity is visually inspected, it is impossible to recognize whether the building is equipped with security facilities or is equipped to facilitate the transmission and reception of wireless signals; in particular, it is impossible to determine which frequency is being shielded, thereby allowing for preparation against potential security attacks.

[0107] Meanwhile, the architectural insulating glass having frequency selectivity according to the present invention as described above is designed by taking into account the thickness of the metal thin film layer of commonly used architectural insulating glass. That is, a pattern for frequency selection is designed by taking into account the thickness of, for example, 10 nm to 40 nm of the metal thin film layer included in the low-E coating layer of low-E glass, thereby making it possible to provide architectural insulating glass having frequency selectivity that can guarantee actual mass production and commercialization possibilities.

[0108] Hereinafter, an insulating glass for construction having frequency selectivity according to embodiments of the present invention will be described in more detail with reference to the drawings.

[0109]

[0110] Architectural insulating glass with frequency selectivity

[0111] FIG. 5 shows an exemplary structure of an insulating glass for architecture having frequency selectivity according to an embodiment of the present invention, and FIG. 6 shows the arrangement of unit cells within the plane of the insulating metal thin film layer of FIG. 5. Hereinafter, with reference to FIG. 5 and FIG. 6, a basic structure of an insulating glass for architecture having frequency selectivity according to an embodiment of the present invention will be described.

[0112] As illustrated in FIG. 5, an insulating glass for architecture (1000) having frequency selectivity according to one embodiment of the present invention may include a first glass layer (100) and an insulating metal thin film layer (200) disposed on one surface of the first glass layer. Note that the insulating metal thin film layer (200) may, for example, be coated with silver (Ag) paste on the first glass layer (100), but is not limited thereto, and any metal material may be used to form the insulating metal thin film layer (200). As a non-limiting example, the thickness of the insulating metal thin film layer (200) may be 10 to 40 μm, but is not limited thereto.

[0113] As described above, according to one aspect, the architectural insulating glass (1000) having frequency selectivity may be Low-E glass, but is not limited thereto. Furthermore, the technical concept of the present invention is not limited to having only a metal thin film layer (200), and it should be understood that insulating glass having a Low-E coating layer including a metal thin film layer together with various additional layers such as a dielectric layer or a polygel coating is also included in the technical concept of the present invention. In addition, the architectural insulating glass having frequency selectivity according to one embodiment of the present invention may be implemented as a multilayer structure as shown in FIG. 2, for example, and an insulating metal thin film layer (200) or a Low-E coating layer including the same may be provided on at least one side of the inner glass or outer glass.

[0114] As illustrated in FIG. 6, the insulating metal thin film layer (200) may include a plurality of unit cells (200-1, ..., 201-n) arranged within the plane of the insulating metal thin film layer (200). Here, the plane of the insulating metal thin film layer may refer to the surface facing an optical or wireless signal when the thin film layer is positioned, as illustrated in FIG. 6, rather than the side of the insulating metal thin film layer as illustrated in FIG. 5, for example. According to one aspect, each unit cell may be formed over the entire thickness direction area extending from the front to the back of the insulating metal thin film layer (200), but is not limited thereto. According to one aspect, a form in which the pattern of the unit cells is formed only partially in the thickness direction of the insulating metal thin film layer (200) should also be understood to be included within the technical scope of the present invention.

[0115] As illustrated in FIG. 6, a plurality of unit cells may be included in a plurality of rows and / or columns, such as n x n, within the plane of the insulating metal thin film layer (200). According to one aspect, the unit cells may be placed over the entire area of ​​the insulating metal thin film layer (200), and according to another aspect, they may be placed only over at least a portion of the insulating metal thin film layer (200). According to one aspect, by partially placing the unit cells in a predetermined area of ​​the insulating metal thin film layer (200), at least one of selective transmission, absorption, or shielding for a specific frequency may be achieved while ensuring the thermal insulation performance of the insulating glass for architecture having frequency selectivity.

[0116]

[0117] Hereinafter, frequency selectivity patterns formed in a unit cell according to embodiments of the present invention will be described in more detail. Here, it should be noted that the patterns formed in the unit cell may be understood, for example, as a Frequency Selective Surface (FSS), but are not limited to such a name.

[0118] In this regard, for architectural insulating glass having frequency selectivity, such as employing a multilayer structure, a low-reflection coating layer including a metal thin film layer (200) can be formed on at least one surface of a first glass layer (10) and a second glass layer (20), as shown in FIG. 2. The insulating metal thin film layer (200) according to embodiments of the present invention may be included in such a low-reflection coating layer, and the frequency selectivity patterns formed in the unit cell have the special characteristic of being arranged adjacent to a plurality of glass layers. Furthermore, since it is required to be formed to have a very thin thickness, for example, considering visibility, it is highly likely that the target frequency selectivity will not be achieved if a conventional FSS design is followed in which a metal layer of a certain thickness or more is provided. In addition, in a conventional FSS design, a metal layer having a pattern is required to be placed at the outermost edge. However, in the case of a pattern having frequency selectivity embedded in a double-layered insulating glass as shown in FIG. 2, glass layers are provided on both sides of the metal thin film layer, particularly when considering the general form in which a low-e coating layer is formed on the inner surface of the double-layered glass. Therefore, if a conventional FSS design is followed, frequency selectivity under desired conditions may not be achieved. Accordingly, the patterns of the metal thin film layer having frequency selectivity according to the embodiment of the present invention described below are designed to achieve the target frequency selectivity while maintaining the basic performance of the insulating glass, taking into account such specific characteristics.

[0119]

[0120] Hereinafter, in this description, the longitudinal direction may refer to the height direction when, for example, architectural insulating glass having frequency selectivity according to embodiments of the present invention is placed in a building, but is not limited thereto. Hereinafter, in this description, 'longitudinal direction' and 'transverse direction' may be used to refer to different directions that are orthogonal to each other. For example, 'longitudinal direction' may be referred to as the 'first direction' and 'transverse direction' may be referred to as the 'second direction'. In addition, for convenience of explanation, the vertical direction in the drawing may be referred to as the vertical direction, and the horizontal direction in the drawing may be referred to as the horizontal direction. Furthermore, the 'first vertical direction' may be referred to as the 'upper direction' in the drawing, the 'second vertical direction' as the 'lower direction' in the drawing, the 'first horizontal direction' as the 'left direction' in the drawing, and the 'second horizontal direction' as the 'right direction' in the drawing. However, this is merely for convenience of explanation and should be understood that the specific description of a particular direction does not constitute a restrictive interpretation of the technical concept of the present invention.

[0121]

[0122] Grid pattern

[0123] FIG. 7 illustrates a grid pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a grid pattern (700) as shown in FIG. 7.

[0124] As illustrated exemplarily in FIG. 7, the grid pattern (700) may include a plurality of longitudinal slits and a plurality of transverse slits. For convenience of subsequent description, the term 'grid pattern' may be used in this description, but such a 'grid pattern' should be understood as a concept that includes not only the pattern exemplarily illustrated in FIG. 7, but also any grid-shaped pattern including transverse slits and longitudinal slits.

[0125] A plurality of longitudinal slits provided in a grid pattern (700) as exemplarily illustrated in FIG. 7 may include a longitudinal center slit (710C), a first longitudinal additional slit (710A-1), a second longitudinal additional slit (710A-2), a first longitudinal outer slit (710E-1), and a second longitudinal outer slit (710E-2).

[0126] For example, the longitudinal center slit (710C) may be located at the transverse center of the unit cell, the first longitudinal additional slit (710A-1) may be spaced apart in the first transverse direction of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart in the second transverse direction of the longitudinal center slit (710C). As a non-limiting example, the first longitudinal additional slit (710A-1) may be spaced apart to the left of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart to the right of the longitudinal center slit (710C), but it should be noted that this is not limited thereto.

[0127] Additionally, for example, the first longitudinal outer slit (710E-1) may be spaced apart in the first transverse direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the second transverse direction of the second longitudinal additional slit (710A-2). As a non-limiting example, the first longitudinal outer slit (710E-1) may be spaced apart in the left direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the right direction of the second longitudinal additional slit (710A-2), but it should be noted that this is not limited thereto.

[0128] In a similar manner, a plurality of transverse slits provided in a grid pattern (700) as exemplarily illustrated in FIG. 7 may include a transverse center slit (720C), a first transverse additional slit (720A-1), a second transverse additional slit (720A-2), a first transverse outer slit (720E-1), and a second transverse outer slit (720E-2).

[0129] For example, the transverse center slit (720C) may be located at the longitudinal center of the unit cell, the first transverse additional slit (720A-1) may be spaced apart in the first longitudinal direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the second longitudinal direction of the transverse center slit (720C). As a non-limiting example, the first transverse additional slit (720A-1) may be spaced apart in the upper direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the lower direction of the transverse center slit (720C), but is not limited thereto.

[0130] Additionally, for example, the first transverse outer slit (720E-1) may be spaced apart in the first longitudinal direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the second longitudinal direction of the second transverse additional slit (720A-2). As a non-limiting example, the first transverse outer slit (720E-1) may be spaced apart in the upper direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the lower direction of the second transverse additional slit (720A-2), but is not limited thereto.

[0131] As illustrated exemplarily in FIG. 7, according to one aspect, the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may be double slits having a predetermined spacing. For example, the double slits formed by the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may all have the same spacing between the double slits, but are not limited thereto.

[0132]

[0133] According to one aspect, the unit cell may have a square shape, the length of one side of the unit cell may be 1 mm, and the line width of the plurality of slits may be 10 µm, but is not limited thereto.

[0134] Figure 8 shows the S-parameter measurement results according to the pattern of Figure 7. As shown in Figure 8, in the case of an insulating glass for architecture equipped with an insulating thin film layer composed of unit cells including a grid pattern according to one embodiment of the present invention as shown in Figure 7, it showed a propagation reduction of -5 dB or less over a wide frequency range, and it was confirmed that it operates as a broadband transparent material in multiple bands even at a standard of -3 dB.

[0135] A grid pattern (700) according to one aspect of the present invention forms a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of such a plurality of grid patches may be configured to have different sizes. That is, by arranging the spacing between the plurality of slits differently, grid patches of various sizes can be formed, and it is possible to induce multiple resonance based on this. Accordingly, it is possible to implement a multi-band broadband transparent material that transmits signals for a plurality of frequency bands in which multiple resonance occurs. Even in the S-parameter measurement results in a frequency band of less than 10 GHz, through multiple resonance via such different square grid arrays, the S of conventional commercial low-E glass 21 We were able to confirm a value that was significantly lower compared to the parameter measurements.

[0136]

[0137] Grid-circular slit pattern

[0138] FIG. 9 illustrates a grid-circular slit pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a grid-circular slit pattern (900) as shown in FIG. 9.

[0139] More specifically, though not limited to, at least some of the plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) according to one embodiment of the present invention may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits, and a circular slit (910) disposed at the center of the grid pattern.

[0140] The grid pattern provided in the exemplary unit cell of FIG. 9 may have a shape similar to, for example, the grid pattern described with reference to FIG. 7, but is not limited thereto.

[0141] More specifically, as illustrated in FIG. 9, a plurality of longitudinal slits provided in a grid pattern may include a longitudinal center slit (710C), a first longitudinal additional slit (710A-1), a second longitudinal additional slit (710A-2), a first longitudinal outer slit (710E-1), and a second longitudinal outer slit (710E-2).

[0142] For example, the longitudinal center slit (710C) may be located at the transverse center of the unit cell, the first longitudinal additional slit (710A-1) may be spaced apart in the first transverse direction of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart in the second transverse direction of the longitudinal center slit (710C). As a non-limiting example, the first longitudinal additional slit (710A-1) may be spaced apart to the left of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart to the right of the longitudinal center slit (710C), but it should be noted that this is not limited thereto.

[0143] Additionally, for example, the first longitudinal outer slit (710E-1) may be spaced apart in the first transverse direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the second transverse direction of the second longitudinal additional slit (710A-2). As a non-limiting example, the first longitudinal outer slit (710E-1) may be spaced apart in the left direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the right direction of the second longitudinal additional slit (710A-2), but it should be noted that this is not limited thereto.

[0144] In a similar manner, a plurality of transverse slits provided in a grid pattern as exemplarily illustrated in FIG. 9 may include a transverse center slit (720C), a first transverse additional slit (720A-1), a second transverse additional slit (720A-2), a first transverse outer slit (720E-1), and a second transverse outer slit (720E-2).

[0145] For example, the transverse center slit (720C) may be located at the longitudinal center of the unit cell, the first transverse additional slit (720A-1) may be spaced apart in the first longitudinal direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the second longitudinal direction of the transverse center slit (720C). As a non-limiting example, the first transverse additional slit (720A-1) may be spaced apart in the upper direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the lower direction of the transverse center slit (720C), but is not limited thereto.

[0146] Additionally, for example, the first transverse outer slit (720E-1) may be spaced apart in the first longitudinal direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the second longitudinal direction of the second transverse additional slit (720A-2). As a non-limiting example, the first transverse outer slit (720E-1) may be spaced apart in the upper direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the lower direction of the second transverse additional slit (720A-2), but is not limited thereto.

[0147] As illustrated exemplarily in FIG. 9, according to one aspect, the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may be double slits having a predetermined spacing. For example, the double slits formed by the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may all have the same spacing between the double slits, but are not limited thereto.

[0148] A grid pattern according to one aspect of the present invention forms a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of such a plurality of grid patches may be configured to have different sizes. That is, by arranging the spacing between the plurality of slits differently, grid patches of various sizes can be formed, and it is possible to induce multiple resonances based thereon.

[0149] As a non-limiting example, as illustrated in FIG. 9, according to one aspect of the present invention, the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) may be six times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (700W) of the unit cell may be 40 times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Depending on the spacing between the slits and the ratio of the lengths of the grid patches formed, multiple resonances can be generated to achieve the desired frequency selectivity.

[0150]

[0151] Meanwhile, according to one aspect of the present invention, as illustrated in FIG. 9, the longitudinal center slit (710C) and the transverse center slit (720C) each have a short portion (750) having a predetermined length in the central portion of the unit cell, so that they can each be divided into two portion slits. That is, the longitudinal center slit (710C) is not formed along the entire longitudinal length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed by dividing it into an upper longitudinal center slit and a lower longitudinal center slit. Similarly, the transverse center slit (720C) is not formed along the entire transverse length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed by dividing it into a left transverse center slit and a right transverse center slit.

[0152] As illustrated in FIG. 9, according to one aspect of the present invention, a circular slit (910) may be formed to be in contact with the end portions in the direction of the longitudinal center slit and the transverse center slit. For example, the circular slit (910) may have a circular shape in which the center coincides with the center of the unit cell, and the upper end of the circular slit (910) may be in contact with the lower end of the longitudinal center slit in the upward direction, the lower end of the circular slit (910) may be in contact with the upper end of the longitudinal center slit in the downward direction, the left end of the circular slit (910) may be in contact with the right end of the transverse center slit in the left direction, and the right end of the circular slit (910) may be in contact with the left end of the transverse center slit in the right direction.

[0153] According to one aspect, the diameter (910W) of the circular slit (910) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1).

[0154] Accordingly, according to one aspect of the present invention, the ratio of the transverse length (700W) of the unit cell : the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) : the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1) : the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) : the diameter (910W) of the circular slit (910) may be 40 : 4 : 1 : 6 : 4.

[0155] According to one aspect, the unit cell as shown in FIG. 9 may be square and have a side length of 1 mm. As a non-limiting example, the line width of the plurality of longitudinal slits and the plurality of transverse slits may be 10 μm, and the line width of the circular slit (910) may be 10 μm. Additionally, the thickness of the insulating metal thin film layer on which the unit cell is formed may be 10 to 40 μm. Under these conditions, it is possible to achieve the target frequency selectivity by configuring the pattern as shown in FIG. 9.

[0156] In this regard, according to one aspect of the present invention, by combining a pattern having a predetermined bandpass characteristic with a grid pattern, the resonant frequency S 21 It is possible to induce a change in parameters. For example, by combining a circular slit (910) with a grid pattern as shown in FIG. 9, it is possible to induce a change in signal efficiency in a specific frequency band.

[0157] FIG. 10 shows the measurement results of S-parameters in a broadband frequency range according to the pattern of FIG. 9. As shown in FIG. 10, in the case of architectural insulating glass equipped with an insulating thin film layer composed of unit cells including a pattern according to an embodiment of the present invention as shown in FIG. 9, electromagnetic shielding results of -20 to 30 dB or less were exhibited over a wide frequency range, and an electromagnetic shielding effect of -50 dB or more can be exhibited in a specific frequency range. Therefore, it is possible to use a predetermined frequency range as a security frequency, and depending on the embodiment, it may be utilized for the purpose of defending against military EMP attacks. For example, based on the pattern as shown in FIG. 9, S of -20 dB or more 21 It is possible to achieve absorber performance with parameters.

[0158] Figure 11 shows the measurement results of S-parameters in the partial frequency range according to the pattern of Figure 9. As previously mentioned, by combining a pattern having a predetermined bandpass characteristic with the grid pattern, the S of the resonant frequency 21 It is possible to induce a change in parameters and configure it to have very low signal reception efficiency in a specific frequency band and signal reception efficiency similar to that of ordinary low-E glass in another specific frequency band. By incorporating circular slits (910) into the grid pattern as shown in FIG. 9, S 21 It is possible to induce improvement or reduction. Furthermore, it is possible to achieve significant changes in frequency selectivity by adding fine modifications to the grid pattern as shown in FIG. 7 and simply incorporating circular slits. Therefore, it is possible to control the frequency bands subject to transmission / absorption / shielding without visually detecting any external differences, which can have an advantageous effect in terms of security.

[0159]

[0160] Grid-Double Circular Slit Pattern

[0161] FIG. 12 illustrates a grid-double circular slit pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a grid-double circular slit pattern (1200) as shown in FIG. 12.

[0162] More specifically but not limitedly, at least some of the plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) according to one embodiment of the present invention may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits, an inner circular slit (1210) disposed at the center of the grid pattern, and an outer circular slit (1220) disposed around the inner circular slit (1210) and spaced apart from the inner circular slit (1210).

[0163] The grid pattern provided in the exemplary unit cell of FIG. 12 may have a shape similar to, for example, the grid pattern described with reference to FIG. 7, but is not limited thereto.

[0164] More specifically, as illustrated in FIG. 12, a plurality of longitudinal slits provided in a grid pattern may include a longitudinal center slit (710C), a first longitudinal additional slit (710A-1), a second longitudinal additional slit (710A-2), a first longitudinal outer slit (710E-1), and a second longitudinal outer slit (710E-2).

[0165] For example, the longitudinal center slit (710C) may be located at the transverse center of the unit cell, the first longitudinal additional slit (710A-1) may be spaced apart in the first transverse direction of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart in the second transverse direction of the longitudinal center slit (710C). As a non-limiting example, the first longitudinal additional slit (710A-1) may be spaced apart to the left of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart to the right of the longitudinal center slit (710C), but it should be noted that this is not limited thereto.

[0166] Additionally, for example, the first longitudinal outer slit (710E-1) may be spaced apart in the first transverse direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the second transverse direction of the second longitudinal additional slit (710A-2). As a non-limiting example, the first longitudinal outer slit (710E-1) may be spaced apart in the left direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the right direction of the second longitudinal additional slit (710A-2), but it should be noted that this is not limited thereto.

[0167] In a similar manner, a plurality of transverse slits provided in a grid pattern as exemplarily illustrated in FIG. 12 may include a transverse center slit (720C), a first transverse additional slit (720A-1), a second transverse additional slit (720A-2), a first transverse outer slit (720E-1), and a second transverse outer slit (720E-2).

[0168] For example, the transverse center slit (720C) may be located at the longitudinal center of the unit cell, the first transverse additional slit (720A-1) may be spaced apart in the first longitudinal direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the second longitudinal direction of the transverse center slit (720C). As a non-limiting example, the first transverse additional slit (720A-1) may be spaced apart in the upper direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the lower direction of the transverse center slit (720C), but is not limited thereto.

[0169] Additionally, for example, the first transverse outer slit (720E-1) may be spaced apart in the first longitudinal direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the second longitudinal direction of the second transverse additional slit (720A-2). As a non-limiting example, the first transverse outer slit (720E-1) may be spaced apart in the upper direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the lower direction of the second transverse additional slit (720A-2), but is not limited thereto.

[0170] As illustrated exemplarily in FIG. 12, according to one aspect, the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may be double slits having a predetermined spacing. For example, the double slits formed by the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may all have the same spacing between the double slits, but are not limited thereto.

[0171] A grid pattern according to one aspect of the present invention forms a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of such a plurality of grid patches may be configured to have different sizes. That is, by arranging the spacing between the plurality of slits differently, grid patches of various sizes can be formed, and it is possible to induce multiple resonances based thereon.

[0172] As a non-limiting example, as illustrated in FIG. 12, according to one aspect of the present invention, the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) may be six times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (700W) of the unit cell may be 40 times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Depending on the spacing between the slits and the ratio of the lengths of the grid patches formed, multiple resonances can be generated to achieve the desired frequency selectivity.

[0173]

[0174] Meanwhile, according to one aspect of the present invention, as shown in FIG. 12, the longitudinal center slit (710C) and the transverse center slit (720C) each have a short portion (750) having a predetermined length in the central portion of the unit cell, so that they can each be divided into two portion slits. That is, the longitudinal center slit (710C) is not formed along the entire longitudinal length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed into an upper longitudinal center slit and a lower longitudinal center slit. Similarly, the transverse center slit (720C) is not formed along the entire transverse length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed into a left transverse center slit and a right transverse center slit.

[0175] As illustrated in FIG. 12, according to one aspect of the present invention, an inner circular slit (1210) may be formed to be in contact with the end portions in the direction of the longitudinal center slit and the transverse center slit. For example, the inner circular slit (1210) may have a circular shape in which the center coincides with the center of the unit cell, and the upper end of the inner circular slit (1210) may be in contact with the lower end of the longitudinal center slit in the upward direction, the lower end of the inner circular slit (1210) may be in contact with the upper end of the longitudinal center slit in the downward direction, the left end of the inner circular slit (1210) may be in contact with the right end of the transverse center slit in the left direction, and the right end of the inner circular slit (1210) may be formed to be in contact with the left end of the transverse center slit in the right direction.

[0176] Referring again to FIG. 12, an outer circular slit (1220) according to one aspect of the present invention may be formed to be in contact with the first longitudinal additional slit (710A-1), the second longitudinal additional slit (710A-2), the first transverse additional slit (720A-1), and the second transverse additional slit (720A-2). For example, the outer circular slit (1220) may have a circular shape in which the center coincides with the center of the unit cell, and the left end of the outer circular slit (1220) may be in contact with the first longitudinal additional slit (710A-1), the right end of the outer circular slit (1220) may be in contact with the second longitudinal additional slit (710A-2), the upper end of the outer circular slit (1220) may be in contact with the first transverse additional slit (720A-1), and the lower end of the outer circular slit (1220) may be in contact with the second transverse additional slit (720A-2).

[0177] According to one aspect, the diameter (1210W) of the inner circular slit (1210) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, according to one aspect, the diameter (1220W) of the outer circular slit (1220) may be eight times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1).

[0178] Accordingly, according to one aspect of the present invention, the ratio of the transverse length (700W) of the unit cell : the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) : the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1) : the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) : the diameter (1210W) of the inner circular slit (1210) : the diameter (1220W) of the outer circular slit (1220) may be 40 : 4 : 1 : 6 : 4 : 8.

[0179]

[0180] According to one aspect, the unit cell as shown in FIG. 12 may be square and have a side length of 1 mm. As a non-limiting example, the line width of the plurality of longitudinal slits and the plurality of transverse slits may be 10 μm, and the line width of the inner circular slit (1210) may be 10 μm. Here, the line width of the outer circular slit (1220) may be 20 μm. According to one aspect, the line width of the outer circular slit (1220) may be twice the line width of the inner circular slit (1210). Additionally, the thickness of the insulating metal thin film layer on which the unit cell is formed may be 10 to 40 μm. Under these conditions, it is possible to achieve the target frequency selectivity by configuring the pattern as shown in FIG. 12.

[0181] In this regard, according to one aspect of the present invention, by combining a pattern having a predetermined bandpass characteristic with a grid pattern, the resonant frequency S 21 It is possible to induce a change in parameters. For example, as shown in FIG. 12, by combining an inner circular slit (1210) and an outer circular slit (1220) in a grid pattern, it is possible to induce a change in signal efficiency in a specific frequency band.

[0182] FIG. 13 shows the results of S-parameter measurements in a broadband frequency range according to the pattern of FIG. 12. As shown in FIG. 13, in the case of architectural insulating glass equipped with an insulating thin film layer composed of unit cells including a pattern according to one embodiment of the present invention as shown in FIG. 12, radio wave shielding results of -50 dB or less were exhibited over a wide frequency range, and a radio wave shielding effect of -70 dB or more can be exhibited in a specific frequency range. Therefore, it is possible to use a predetermined frequency range as a security frequency, and depending on the embodiment, it may be utilized for the purpose of defending against military EMP attacks. For example, if it is necessary to achieve higher shielding performance compared to using a pattern as shown in FIG. 9, it is possible to form a pattern as shown in FIG. 12. Thus, architectural insulating glass equipped with frequency selectivity customized according to the desired range of shielding efficiency can be provided. In the case of architectural insulating glass equipped with an insulating thin film layer composed of unit cells including a pattern according to one embodiment of the present invention as shown in FIG. 12, S is at least 20 dB lower on average compared to conventional Low-E glass as shown in FIG. 3 and 4. 21 It was confirmed that the value could be secured.

[0183] Figure 14 shows the measurement results of S-parameters in the partial frequency range according to the pattern of Figure 12. As previously mentioned, by combining a pattern having a predetermined bandpass characteristic with the grid pattern, the S of the resonant frequency 21It is possible to induce a change in parameters and to configure it to have very low signal reception efficiency in a specific frequency band and signal reception efficiency similar to that of ordinary low-E glass in another specific frequency band. By combining an inner circular slit (1210) and an outer circular slit (1220) in a grid pattern as shown in FIG. 12, S 21 It is possible to induce improvement or reduction. Furthermore, it is possible to achieve significant changes in frequency selectivity by adding fine modifications to the grid pattern as shown in FIG. 7 and simply incorporating circular slits. In addition, a meaningful improvement in S-parameters was confirmed in the pattern design as shown in FIG. 12 (Design #2) compared to the pattern design as shown in FIG. 9 (Design #1). Therefore, it is possible to control the frequency bands subject to transmission / absorption / shielding without visual differences, which can have an advantageous effect in terms of security.

[0184]

[0185] Grid-Double Square Slit Pattern

[0186] FIG. 15 illustrates a grid-double square slit pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a grid-double square slit pattern (1500) as shown in FIG. 15.

[0187] More specifically but not limitedly, at least some of the plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) according to one embodiment of the present invention may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits, an inner square slit (1510) disposed at the center of the grid pattern, and an outer square slit (1520) disposed around the inner square slit (1510) and spaced apart from the inner square slit (1510).

[0188] The grid pattern provided in the exemplary unit cell of FIG. 15 may have a shape similar to, for example, the grid pattern described with reference to FIG. 7, but is not limited thereto.

[0189] More specifically, as illustrated in FIG. 15, a plurality of longitudinal slits provided in a grid pattern may include a longitudinal center slit (710C), a first longitudinal additional slit (710A-1), a second longitudinal additional slit (710A-2), a first longitudinal outer slit (710E-1), and a second longitudinal outer slit (710E-2).

[0190] For example, the longitudinal center slit (710C) may be located at the transverse center of the unit cell, the first longitudinal additional slit (710A-1) may be spaced apart in the first transverse direction of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart in the second transverse direction of the longitudinal center slit (710C). As a non-limiting example, the first longitudinal additional slit (710A-1) may be spaced apart to the left of the longitudinal center slit (710C), and the second longitudinal additional slit (710A-2) may be spaced apart to the right of the longitudinal center slit (710C), but it should be noted that this is not limited thereto.

[0191] Additionally, for example, the first longitudinal outer slit (710E-1) may be spaced apart in the first transverse direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the second transverse direction of the second longitudinal additional slit (710A-2). As a non-limiting example, the first longitudinal outer slit (710E-1) may be spaced apart in the left direction of the first longitudinal additional slit (710A-1), and the second longitudinal outer slit (710E-2) may be spaced apart in the right direction of the second longitudinal additional slit (710A-2), but it should be noted that this is not limited thereto.

[0192] In a similar manner, a plurality of transverse slits provided in a grid pattern as exemplarily illustrated in FIG. 15 may include a transverse center slit (720C), a first transverse additional slit (720A-1), a second transverse additional slit (720A-2), a first transverse outer slit (720E-1), and a second transverse outer slit (720E-2).

[0193] For example, the transverse center slit (720C) may be located at the longitudinal center of the unit cell, the first transverse additional slit (720A-1) may be spaced apart in the first longitudinal direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the second longitudinal direction of the transverse center slit (720C). As a non-limiting example, the first transverse additional slit (720A-1) may be spaced apart in the upper direction of the transverse center slit (720C), and the second transverse additional slit (720A-2) may be spaced apart in the lower direction of the transverse center slit (720C), but is not limited thereto.

[0194] Additionally, for example, the first transverse outer slit (720E-1) may be spaced apart in the first longitudinal direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the second longitudinal direction of the second transverse additional slit (720A-2). As a non-limiting example, the first transverse outer slit (720E-1) may be spaced apart in the upper direction of the first transverse additional slit (720A-1), and the second transverse outer slit (720E-2) may be spaced apart in the lower direction of the second transverse additional slit (720A-2), but is not limited thereto.

[0195] As illustrated exemplarily in FIG. 15, according to one aspect, the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may be double slits having a predetermined spacing. For example, the double slits formed by the first longitudinal outer slit (710E-1), the second longitudinal outer slit (710E-2), the first transverse outer slit (720E-1), and the second transverse outer slit (720E-2) may all have the same spacing between the double slits, but are not limited thereto.

[0196] A grid pattern according to one aspect of the present invention forms a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of such a plurality of grid patches may be configured to have different sizes. That is, by arranging the spacing between the plurality of slits differently, grid patches of various sizes can be formed, and it is possible to induce multiple resonances based thereon.

[0197] As a non-limiting example, as illustrated in FIG. 15, according to one aspect of the present invention, the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) may be six times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Additionally, the transverse length (700W) of the unit cell may be 40 times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1). Depending on the spacing between the slits and the ratio of the lengths of the grid patches formed, multiple resonances can be generated to achieve the desired frequency selectivity.

[0198]

[0199] Meanwhile, according to one aspect of the present invention, as illustrated in FIG. 15, the longitudinal center slit (710C) and the transverse center slit (720C) each have a short portion (750) having a predetermined length in the central portion of the unit cell, so that they can each be divided into two portion slits. That is, the longitudinal center slit (710C) is not formed along the entire longitudinal length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed by dividing it into an upper longitudinal center slit and a lower longitudinal center slit. Similarly, the transverse center slit (720C) is not formed along the entire transverse length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed by dividing it into a left transverse center slit and a right transverse center slit.

[0200] As illustrated in FIG. 15, according to one aspect of the present invention, an inner square slit (1510) may be formed to be in contact with the end portion (750) of the longitudinal center slit (710C) and the transverse center slit (720C). For example, the inner square slit (1510) may have a square shape in which the center coincides with the center of the unit cell, and the upper end of the inner square slit (1510) may be in contact with the lower end of the longitudinal center slit in the upper direction, the lower end of the inner square slit (1510) may be in contact with the upper end of the longitudinal center slit in the lower direction, the left end of the inner square slit (1510) may be in contact with the right end of the transverse center slit in the left direction, and the right end of the inner square slit (1510) may be formed to be in contact with the left end of the transverse center slit in the right direction.

[0201] Referring again to FIG. 15, an outer square slit (1520) according to one aspect of the present invention may be formed in the inner region of the square formed by the first longitudinal additional slit (710A-1), the second longitudinal additional slit (710A-2), the first transverse additional slit (720A-1), and the second transverse additional slit (720A-2). For example, the outer square slit (1220) may have a square shape with a center that coincides with the center of the unit cell, and may be formed with a side length longer than that of the inner square slit (1210), but may be formed so as not to touch the square formed by the first longitudinal additional slit (710A-1), the second longitudinal additional slit (710A-2), the first transverse additional slit (720A-1), and the second transverse additional slit (720A-2), and may be formed to be spaced apart from the square formed by the first longitudinal additional slit (710A-1), the second longitudinal additional slit (710A-2), the first transverse additional slit (720A-1), and the second transverse additional slit (720A-2).

[0202] According to one aspect, the length of one side of the inner square slit (1510) may be twice the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1), and the length of one side of the outer square slit (1520) may be four times the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1).

[0203] Accordingly, according to one aspect of the present invention, the ratio of the transverse length (700W) of the unit cell : the transverse length (701W) of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit (710E-1) : the spacing (703W) between the double slits of the first longitudinal outer slit (710E-1) : the transverse length (705W) of the grid patch formed between the first longitudinal outer slit (710E-1) and the first longitudinal additional slit (710A-1) : the length of one side of the inner square slit (1510W) : the length of one side of the outer square slit (1520W) may be 40 : 4 : 1 : 6 : 2 : 4.

[0204] According to one aspect, the unit cell as shown in FIG. 15 may be square and have a side length of 1 mm. As a non-limiting example, the line width of the plurality of longitudinal slits and the plurality of transverse slits may be 10 μm, and the line width of the inner square slit (1510) may be 10 μm. Here, the line width of the outer square slit (1520) may be 20 μm. According to one aspect, the line width of the outer square slit (1220) may be twice the line width of the inner square slit (1510). Additionally, the thickness of the insulating metal thin film layer on which the unit cell is formed may be 10 to 40 μm. Under these conditions, it is possible to achieve the target frequency selectivity by configuring the pattern as shown in FIG. 15.

[0205] In this regard, according to one aspect of the present invention, by combining a pattern having a predetermined bandpass characteristic with a grid pattern, the resonant frequency S 21 It is possible to induce a change in parameters. For example, as shown in FIG. 15, by combining an inner square slit (1510) and an outer square slit (1520) in a grid pattern, it is possible to induce a change in signal efficiency in a specific frequency band.

[0206] FIG. 16 shows the measurement results of S-parameters in a broadband frequency range according to the pattern of FIG. 15. As shown in FIG. 16, in the case of architectural insulating glass equipped with an insulating thin film layer composed of unit cells including a pattern according to one embodiment of the present invention as shown in FIG. 15, electromagnetic shielding results of -50 dB or less were exhibited over a wide frequency range. Therefore, it is possible to use a predetermined frequency range as a security frequency, and depending on the embodiment, it may be utilized for defense against military EMP attacks. For example, by forming a pattern as shown in FIG. 15, it is possible to provide insulating glass having a stable shielding effect of -15 dB or more in the band above 20 GHz. Thus, architectural insulating glass equipped with customized frequency selectivity according to the desired range of shielding efficiency can be provided. Furthermore, by forming a grid pattern and a square pattern, that is, a pattern containing only linear components, as shown in FIG. 15, it has the advantageous effect of reducing process difficulty and the defect rate compared to forming a circular pattern.

[0207] Figure 17 shows the measurement results of S-parameters in the partial frequency range according to the pattern of Figure 15. As previously mentioned, by combining a pattern having a predetermined bandpass characteristic with the grid pattern, the S of the resonant frequency 21 It is possible to induce a change in parameters and to configure it to have very low signal reception efficiency in a specific frequency band and signal reception efficiency similar to that of ordinary low-E glass in another specific frequency band. By combining an inner square slit (1510) and an outer square slit (1520) in a grid pattern as shown in FIG. 15, S 21 It is possible to induce improvement or reduction of the S-parameters. Significant improvement in S-parameters was confirmed in the pattern design (Design #3) as shown in Fig. 15 compared to the grid pattern design (Grid Design) as shown in Fig. 7. Therefore, it is possible to control the frequency bands subject to transmission / absorption / shielding without visually detecting external differences, which can have an advantageous effect in terms of security. Furthermore, by combining a grid shape and a square slit with band-pass characteristics, it is possible to provide thermal insulation glass that has transmission efficiency similar to or slightly improved than conventional low-e glass in specific bands (1 GHz / 6 GHz), while reducing transmission efficiency in other bands.

[0208]

[0209] Grid-cross circular slit pattern

[0210] FIG. 18 illustrates a grid-cross circular slit pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a grid-cross circular slit pattern (1800) as shown in FIG. 18.

[0211] More specifically but not limitedly, at least some of the plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) according to one embodiment of the present invention may include a grid pattern comprising a plurality of longitudinal slits and a plurality of transverse slits, and a circular slit (1530) arranged to intersect at least one of the plurality of longitudinal slits and at least one of the plurality of transverse slits at the center of the grid pattern.

[0212] More specifically, as illustrated in FIG. 18, a plurality of longitudinal slits provided in a grid pattern may include a longitudinal center slit (1510C), a first longitudinal additional slit (1510E-1), and a second longitudinal additional slit (1510E-2).

[0213] For example, the longitudinal center slit (1510C) may be located at the transverse center of the unit cell, the first longitudinal additional slit (1510E-1) may be spaced apart in the first transverse direction of the longitudinal center slit (1510C), and the second longitudinal additional slit (1510E-2) may be spaced apart in the second transverse direction of the longitudinal center slit (1510C). As a non-limiting example, the first longitudinal additional slit (1510E-1) may be spaced apart to the left of the longitudinal center slit (1510C), and the second longitudinal additional slit (1510E-2) may be spaced apart to the right of the longitudinal center slit (1510C), but it should be noted that this is not limited thereto.

[0214] In a similar manner, a plurality of transverse slits provided in a grid pattern as exemplarily illustrated in FIG. 18 may include a transverse center slit (1520C), a first transverse additional slit (1520E-1), and a second transverse additional slit (1520E-2).

[0215] For example, the transverse center slit (1520C) may be located at the longitudinal center of the unit cell, the first transverse additional slit (1520E-1) may be spaced apart in the first longitudinal direction of the transverse center slit (1520C), and the second transverse additional slit (1520E-2) may be spaced apart in the second longitudinal direction of the transverse center slit (1520C). As a non-limiting example, the first transverse additional slit (1520E-1) may be spaced apart in the upper direction of the transverse center slit (1520C), and the second transverse additional slit (1520E-2) may be spaced apart in the lower direction of the transverse center slit (1520C), but is not limited thereto.

[0216] As illustrated exemplarily in FIG. 18, according to one aspect, the first longitudinal additional slit (1510E-1), the second longitudinal additional slit (1510E-2), the first transverse additional slit (1520E-1), and the second transverse additional slit (1520E-2) may be double slits having a predetermined spacing. For example, the double slits formed by the first longitudinal additional slit (1510E-1), the second longitudinal additional slit (1510E-2), the first transverse additional slit (1520E-1), and the second transverse additional slit (1520E-2) may all have the same spacing between the double slits, but are not limited thereto.

[0217] A grid pattern according to one aspect of the present invention forms a plurality of grid patches based on a plurality of longitudinal slits and a plurality of transverse slits, and at least some of such a plurality of grid patches may be configured to have different sizes. That is, by arranging the spacing between the plurality of slits differently, grid patches of various sizes can be formed, and it is possible to induce multiple resonances based thereon.

[0218] As a non-limiting example, as illustrated in FIG. 18, according to one aspect of the present invention, the transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal additional slit (1510E-1) may be formed to be longer than the spacing between the double slits of the first longitudinal additional slit (1510E-1). Additionally, the transverse length of the grid patch formed between the first longitudinal additional slit (1510E-1) and the longitudinal center slit (1510C) may be formed to be longer than the transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal additional slit (1510E-1). Depending on such spacing between slits and the ratio of the lengths of the formed grid patches, multiple resonances can be generated to provide the desired frequency selectivity.

[0219]

[0220] Meanwhile, according to one aspect of the present invention, as illustrated in FIG. 18, the longitudinal center slit (1510C) and the transverse center slit (1520C) each have a short portion (1550) having a predetermined length in the central portion of the unit cell, so that they can each be divided into two portion slits. That is, the longitudinal center slit (1510C) is not formed along the entire longitudinal length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed into an upper longitudinal center slit and a lower longitudinal center slit. Similarly, the transverse center slit (1520C) is not formed along the entire transverse length of the unit cell, but is formed excluding a predetermined length in the central portion of the unit cell, so that it can be formed into a left transverse center slit and a right transverse center slit.

[0221] As illustrated in FIG. 18, a circular slit (1530) is formed at the center of the grid pattern and may be positioned to intersect at least one of a plurality of longitudinal slits and at least one of a plurality of transverse slits. As a non-limiting example, more specifically, the circular slit (1530) may be formed to intersect the longitudinal center slit (1510C) and the transverse center slit (1520C) at a position spaced further from the center of the unit cell than the shorting portion (1550) of the longitudinal center slit (1510C) and the transverse center slit (1520C). For example, the circular slit (1530) may have a circular shape in which the center coincides with the center of the unit cell, and the upper end of the circular slit (1530) may be positioned higher than the lower end of the vertical center slit in the upper direction so as to intersect with the vertical center slit in the upper direction, the lower end of the circular slit (1530) may be positioned lower than the upper end of the vertical center slit in the lower direction so as to intersect with the vertical center slit in the lower direction, the left end of the circular slit (1530) may be positioned to the right of the right end of the horizontal center slit in the left direction so as to intersect with the horizontal center slit in the left direction, and the right end of the circular slit (1530) may be positioned to the right of the left end of the horizontal center slit in the right direction so as to intersect with the horizontal center slit in the right direction.

[0222] Referring again to FIG. 18, a circular slit (1530) may be formed in the inner area of ​​the rectangle formed by the first longitudinal additional slit (1510E-1), the second longitudinal additional slit (1510E-2), the first transverse additional slit (1520E-1), and the second transverse additional slit (1520E-2). For example, the circular slit (1530) may have a circular shape in which the center coincides with the center of the unit cell, and the diameter of the circular slit (1530) may be formed to be longer than the length of the short section of the longitudinal center slit or the transverse center slit, but may be formed so as not to be in contact with the rectangle formed by the first longitudinal additional slit (1510E-1), the second longitudinal additional slit (1510E-2), the first transverse additional slit (1520E-1), and the second transverse additional slit (1520E-2), and spaced apart from the rectangle formed by the first longitudinal additional slit (1510E-1), the second longitudinal additional slit (1510E-2), the first transverse additional slit (1520E-1), and the second transverse additional slit (1520E-2).

[0223] According to one aspect, the unit cell as shown in FIG. 18 may be square and have a side length of 1 mm. As a non-limiting example, the line width of the plurality of longitudinal slits and the plurality of transverse slits may be 10 μm, and the line width of the circular slit (1530) may be 40 μm. According to one aspect, the line width of the circular slit (1530) may be four times the line width of the plurality of longitudinal slits and the plurality of transverse slits. Additionally, the thickness of the insulating metal thin film layer on which the unit cell is formed may be 10 to 40 μm. Under these conditions, it is possible to achieve the target frequency selectivity by configuring the pattern as shown in FIG. 18.

[0224] In this regard, according to one aspect of the present invention, by combining a pattern having a predetermined bandpass characteristic or a pattern having a highpass characteristic with a grid pattern, the resonant frequency S 21 It is possible to induce a change in parameters. For example, by combining a circular slit (1530) with a grid pattern as shown in FIG. 18, it is possible to induce a change in signal efficiency in a specific frequency band.

[0225] Figure 19 shows the measurement results of S-parameters in the partial frequency range according to the pattern of Figure 18. As previously mentioned, by combining a pattern having a predetermined bandpass characteristic or highpass characteristic with the grid pattern, the S of the resonant frequency 21 It is possible to induce changes in parameters and configure it to have very low signal reception efficiency in a specific frequency band and signal reception efficiency similar to that of ordinary low-E glass in another specific frequency band. In particular, it is possible to implement an ultra-wideband transparent material by combining a circular slit (1530) with a grid pattern as shown in FIG. 18. Compared to the grid design as shown in FIG. 7, the manifestation of groundbreaking frequency transmission characteristics was confirmed in the pattern design (Design #4) as shown in FIG. 18. For example, it is possible to control the frequency bands subject to transmission / absorption / shielding without visually detecting external differences, such as the diameter of the circular slit or whether it intersects with the center slit, or whether multiple circular slits are provided, in relation to the pattern according to one aspect of the present invention shown in FIG. 9 or FIG. 12, thereby providing an advantageous effect in terms of security.

[0226]

[0227] Double square-cross slit pattern

[0228] FIG. 20 illustrates a double square-cross slit pattern of a unit cell according to one embodiment of the present invention. According to one aspect of the present invention, at least some of a plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) may include a double square-cross slit pattern (2000) as shown in FIG. 20.

[0229] More specifically, but not limitedly, at least some of the plurality of unit cells that can be arranged within the plane of an insulating metal thin film layer (200) according to one embodiment of the present invention may include an inner square slit (2020), an outer square slit (2010), and a plurality of T-shaped slits (2030).

[0230] The inner square slit (2020) may be positioned at the center of the unit cell. According to one aspect, the inner square slit (2020) may be positioned to have the same center as the center of the unit cell.

[0231] The outer square slit (2010) may be positioned to surround the inner square slit (2020) and spaced apart from the inner square slit (2020). According to one aspect, the outer square slit (2010) may also be positioned to have the same center point as the center point of the unit cell.

[0232] Multiple T-shaped slits (2030) may be placed at the center of each side of the unit cell. For example, T-shaped slits (2030) may be formed at the center of the upper side of the unit cell, the center of the lower side of the unit cell, the center of the left side of the unit cell, and the center of the right side of the unit cell.

[0233] As illustrated in FIG. 20, according to one aspect of the present invention, the T-shaped slit (2030) may include an edge slit (2030E) positioned adjacent to the center of each side of the unit cell and a protruding slit (2030P) extending from the center of the edge slit (2030E) toward the center of the unit cell. As a non-limiting example, according to one aspect of the present invention, the line width of the protruding slit (2030P) may be twice the line width of the edge slit (2030E).

[0234] According to one aspect, the T-shaped slit (2030) can be combined with the T-shaped slit (2030) of an adjacent unit cell to form a cross slit with the same longitudinal length and transverse length. That is, adjacent edge slits (2030E) of adjacent unit cells can be combined to form a slit having the same line width as the protruding slit (2030P), and adjacent protruding slits (2030P) of adjacent unit cells can be combined to form a slit with the same length as the edge slit (2030E). Accordingly, the cross slit formed by combining the T-shaped slits (2030) of adjacent unit cells can form a cross-shaped slit in which the lengths of the first direction (e.g., longitudinal direction) and the second direction (e.g., transverse direction) are equal to each other, and the line widths of the slits in the first direction (e.g., longitudinal direction) and the second direction (e.g., transverse direction) are equal to each other.

[0235] As illustrated in FIG. 20, according to one aspect, the line width of the inner square slit (2020) may be the same as the line width of the edge slit (2030E). Also, according to one aspect, the line width of the outer square slit (2010) may be the same as the line width of the protruding slit (2030P). As a non-limiting example, the line width of the outer square slit (2010) may be twice the line width of the inner square slit (2020).

[0236] Meanwhile, according to one aspect of the present invention, the length of one side of the inner square slit (2020) and / or the outer square slit (2010) may be formed to have a predetermined length range. For example, according to one aspect, the length (2020W) of one side of the inner square slit (2020) may be formed to be shorter than the length (2030W) of the edge slit (2030E). Accordingly, the inner square slit (2020) may be formed within the longitudinal arrangement range of the edge slit (2030E) formed on the left or right side of the unit cell, and also within the transverse arrangement range of the edge slit (2030E) formed on the upper or lower side.

[0237] Additionally, for example, the length (2010W) of one side of the outer square slit (2010) may be formed to be longer than the length (2030W) of the edge slit (2030E). Accordingly, the outer square slit (2010) may be positioned in an area further from the center of the unit cell than the longitudinal positioning range of the edge slit (2030E) formed on the left or right side of the unit cell and the transverse positioning range of the edge slit (2030E) formed on the upper or lower side. Here, the outer square slit (2010) may have a length range that does not come into contact with the end of the protrusion (2030P) formed on each side of the unit cell in the direction of the unit cell center.

[0238]

[0239] According to one aspect, the length of one side (2000W) of the unit cell may be 10 times the length of one side (2020W) of the inner square slit (2020). Additionally, the length of one side (2010W) of the outer square slit (2010) may be 5 times the length of one side (2020W) of the inner square slit (2020), and the length (2030W) of the edge slit (2030E) may be 1.5 times the length of one side (2020W) of the inner square slit (2020). Accordingly, according to one aspect of the present invention, the ratio of the length of one side of the unit cell (2000W) : the length of one side of the outer square slit (2010W) : the length of one side of the inner square slit (2020W) : the length of the edge slit (2030E) (2030W) may be 10 : 5 : 1 : 1.5.

[0240]

[0241] According to one aspect, the unit cell as shown in FIG. 20 may be square and have a side length of 1 mm. As a non-limiting example, the line width of the inner square slit (2020) may be 10 µm. Additionally, the line width of the edge slit (2030E) may be 10 µm. Furthermore, the line width of the outer square slit (2010) may be 20 µm, and the line width of the protruding slit (2030P) may be 20 µm. Here, the thickness of the insulating metal thin film layer on which the unit cell is formed may be 10 to 40 µm. Under such conditions, it is possible to achieve the target frequency selectivity by configuring the pattern as shown in FIG. 20.

[0242]

[0243] In this regard, according to one aspect of the present invention, it is possible to induce a change in signal efficiency in a specific frequency band by combining a double square slit and a cross-shaped slit, for example, as illustrated in FIG. 20. More specifically, but not limited to, multiple resonances can be induced by adding a double square slit (DSL) pattern to the metal thin film layer coating area of ​​a general insulating glass. Additionally, high passband characteristics can be achieved by forming a plurality of Greek cross slot patterns by combining T-shaped slits of adjacent unit cells. Through this, a smaller reduction in coating area compared to the grid structure described above can be achieved, and simultaneously, S in multiple resonant frequency bands 21 It is possible to induce a rapid change in parameters.

[0244] Figure 21 shows the measurement results of S-parameters in a partial frequency range according to the pattern of Figure 20. As shown in Figure 21, it was confirmed that a rapid change in S-parameters is achieved in the pattern design (Design #5) shown in Figure 20 compared to the grid pattern design (Grid Design) shown in Figure 7 or the grid-double circular slit pattern design (Design #2) shown in Figure 12. As shown in Figure 21, for example, it was confirmed that the slope of the S-parameter measurements according to the pattern of Figure 20 fluctuates much more rapidly than the S-parameter measurements according to other patterns in the 6 GHz frequency band. Based on these characteristics, it is possible to finely adjust the frequency control in a desired band within a narrow band range. That is, it has the advantageous effect of enabling more precise control of the frequency band that is the target of at least one of signal transmission, absorption, or shielding. As a non-limiting example, S 21High S compared to cutting with a small coating area in the desired frequency band (6 GHz) 21 It can induce a change in the slope of.

[0245]

[0246] Although the invention has been described above with reference to the drawings and embodiments, this does not mean that the scope of protection of the present invention is limited by the drawings or embodiments, and those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as described in the following claims.

[0247] Although the present invention described above is explained based on a series of functional blocks, it is not limited by the aforementioned embodiments and attached drawings, and it will be obvious to those skilled in the art that various substitutions, modifications, and changes are possible within the scope of the technical concept of the present invention.

[0248] The combination of the aforementioned embodiments is not limited to the aforementioned embodiments, and various forms of combinations in addition to the aforementioned embodiments may be provided as needed for implementation and / or as required.

[0249] In the aforementioned embodiments, methods are described based on flowcharts as a series of steps or blocks; however, the present invention is not limited to the order of the steps, and some steps may occur in a different order or simultaneously with other steps as described above. Furthermore, those skilled in the art will understand that the steps shown in the flowcharts are not exclusive, that other steps may be included, or that one or more steps of the flowcharts may be omitted without affecting the scope of the present invention.

[0250] The foregoing embodiments include examples of various aspects. While it is not possible to describe all possible combinations for representing various aspects, those skilled in the art will recognize that other combinations are possible. Accordingly, the present invention shall be deemed to include all other substitutions, modifications, and changes falling within the scope of the following claims.

[0251]

[0252] [Explanation of the symbol]

[0253] 100: 1st glass layer

[0254] 200: Insulating metal thin film layer

[0255] 210-1 : 1st Unit Cell

[0256] 210-n : n-unit cell

[0257] 700 : Grid pattern

[0258] 710C: Longitudinal center slit

[0259] 710A: Longitudinal additional slit

[0260] 710E: Longitudinal outer slit

[0261] 720C: Transverse center slit

[0262] 720A: Transverse additional slit

[0263] 720E: Transverse outer slit

[0264] 750 : Short circuit

[0265] 910: Circular slit

[0266] 1210: Inner circular slit

[0267] 1220: Outer circular slit

[0268] 1510 : Inner square slit

[0269] 1520 : Outer square slit

[0270] 1550: Circular slit

[0271] 2010: Outer square slit

[0272] 2020 : Inner square slit

[0273] 2030 : T-shaped slit

Claims

1. As an insulating glass for architecture having frequency selectivity, First glass layer; and A thermal insulating metal thin film layer disposed on one surface of the first glass layer; comprising, The above insulating metal thin film layer comprises a plurality of unit cells arranged within the plane of the insulating metal thin film layer, and at least some of the unit cells are A grid pattern including a plurality of longitudinal slits and a plurality of transverse slits; An inner square slit positioned at the center of the above grid pattern; and An outer square slit surrounding the inner square slit and spaced apart from the inner square slit; comprising Architectural insulating glass with frequency selectivity.

2. In Paragraph 1, The above plurality of longitudinal slits are, A longitudinal center slit located at the transverse center of the above unit cell; A first longitudinal additional slit spaced apart in a first transverse direction of the above longitudinal center slit; A second longitudinal additional slit spaced apart in the second transverse direction of the above longitudinal central slit; A first longitudinal outer slit spaced apart in a first transverse direction of the first longitudinal additional slit; and A second longitudinal outer slit spaced apart in the second transverse direction of the second longitudinal additional slit; comprising Architectural insulating glass with frequency selectivity.

3. In Paragraph 2, The above plurality of transverse slits are, A transverse center slit located at the longitudinal center of the above unit cell; A first transverse additional slit spaced apart in the first longitudinal direction of the above transverse central slit; A second transverse additional slit spaced apart in the second longitudinal direction of the above transverse central slit; A first transverse outer slit spaced apart in the first longitudinal direction of the first transverse additional slit; and A second transverse outer slit spaced apart in the second longitudinal direction of the second transverse additional slit; comprising Architectural insulating glass with frequency selectivity.

4. In Paragraph 3, The above-mentioned first longitudinal outer slit, second longitudinal outer slit, first transverse outer slit, and second transverse outer slit are, A double slit having a predetermined spacing, Architectural insulating glass with frequency selectivity.

5. In Paragraph 3, Each of the above longitudinal center slit and transverse center slit is, The central part of the above unit cell is provided with a short section having a predetermined length, divided into two partial slits, Architectural insulating glass with frequency selectivity.

6. In Paragraph 5, The inner square slit above is, It is formed to be in contact with the end portion in the direction of the short section of the above-mentioned longitudinal center slit and transverse center slit, and The above outer square slit is, A portion formed in the inner region of the rectangle formed by the first longitudinal additional slit, the second longitudinal additional slit, the first transverse additional slit, and the second transverse additional slit. Architectural insulating glass with frequency selectivity.

7. In Paragraph 4, The above grid pattern is, A plurality of grid patches are formed based on the plurality of longitudinal slits and a plurality of transverse slits, and At least some of the aforementioned plurality of grid patches have different sizes, Architectural insulating glass with frequency selectivity.

8. In Paragraph 4, The transverse length of the outermost grid patch formed in the first transverse direction of the first longitudinal outer slit is four times the spacing between the double slits of the first longitudinal outer slit, and The transverse length of the grid patch formed between the first longitudinal outer slit and the first longitudinal additional slit is six times the spacing between the double slits of the first longitudinal outer slit, and The transverse length of the above unit cell is 40 times the spacing between the double slits of the first longitudinal outer slit, Architectural insulating glass with frequency selectivity.

9. In Paragraph 4, The length of one side of the inner square slit above is, The spacing between the double slits of the first longitudinal outer slit is twice the spacing between the double slits, and The length of one side of the above outer square slit is, Four times the spacing between the double slits of the first longitudinal outer slit, Architectural insulating glass with frequency selectivity.

10. In Paragraph 1, The above unit cell is square and has a side length of 1 mm, and The line width of the plurality of longitudinal slits and the plurality of transverse slits is 10 μm, and The line width of the inner square slit above is 10 μm, and The line width of the outer square slit above is 20 μm, and The thickness of the above insulating metal thin film layer is 10 to 40 μm, Architectural insulating glass with frequency selectivity.

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