Photosensitive resin composition and method for producing cured relief pattern

Abstract

Provided is a photosensitive resin composition that is used for a panel level package process, the photosensitive resin composition comprising (A) 100 parts by mass of at least one selected from the group consisting of (A-1) a polyimide precursor and (A-2) a polyimide, (B) 0.5-20 parts by mass of a photopolymerization initiator, and (C) 300-800 parts by mass of an organic solvent, the (B) photopolymerization initiator including a compound represented by general formula (1) or general formula (2): (in the formulae, Ra to Rf are as defined in the description), and the viscosity measured using an E-type viscometer at 23°C being 0.02-1.0 Pa·s.

Description

Method for producing a photosensitive resin composition and a cured relief pattern

[0001] The present invention relates to a photosensitive resin composition and a method for producing a cured relief pattern, etc.

[0002] Conventionally, polyimide resins possessing excellent heat resistance, electrical properties, and mechanical properties have been used as insulating materials for electronic components, as well as for passivation films, surface protective films, and interlayer insulating films of semiconductor devices. Among these polyimide resins, those provided in the form of photosensitive polyimide precursor compositions allow for the easy formation of heat-resistant relief pattern films through thermal imidization treatment by coating, exposure, development, and curing of the composition. Such photosensitive polyimide precursor compositions have the advantage of significantly shortening the process compared to conventional non-photosensitive polyimide materials.

[0003] Incidentally, semiconductor devices (hereinafter also referred to as "devices") are mounted on printed circuit boards in various ways depending on the purpose. Conventionally, devices were generally manufactured using the wire bonding method, in which thin wires are connected from the external terminals (pads) of the device to the lead frame. However, with the increasing speed of devices and the fact that operating frequencies have reached gigahertz (GHz), differences in the wiring length of each terminal during mounting now affect the operation of the device. Therefore, in mounting devices for high-end applications, it has become necessary to precisely control the length of the mounting wiring, and wire bonding has become difficult to meet this requirement.

[0004] Therefore, flip-chip mounting has been proposed, in which a redistribution layer is formed on the surface of a semiconductor chip, bumps (electrodes) are formed on top of it, and then the chip is flipped over and directly mounted on a printed circuit board. Because this flip-chip mounting allows for precise control of the wiring distance, it has been adopted for high-end devices that handle high-speed signals, and because of its small mounting size, it has been adopted for mobile phones and the like, and demand is rapidly expanding. Furthermore, recently, a semiconductor chip mounting technology called fan-out wafer-level packaging (FOWLP) has been proposed, in which individual chips are manufactured by dicing a wafer that has undergone pre-processing, the individual chips are reconstructed on a support and sealed with molding resin, and then the redistribution layer is formed after peeling off the support (for example, Patent Document 1). FOWLP has the advantage of being able to reduce the height of the package and achieve high-speed transmission or cost reduction.

[0005] In recent years, panel-level packages (PLPs) have attracted attention due to the increasing size of semiconductor chips and packages. Panel-level packages are packages manufactured using rectangular panel substrates such as glass or ceramic substrates instead of silicon wafers used in the above-mentioned FOWLPs, and are attracting attention with the aim of increasing the yield of semiconductor packages per process.

[0006] Japanese Patent Publication No. 2005-167191

[0007] However, since panel-level packages use large rectangular panel substrates, the spin coaters used for conventional wafer-level packages cannot be used, and slit coaters or similar equipment must be used. Conventional photosensitive resin compositions for wafer-level packages sometimes caused problems during slit coating.

[0008] Furthermore, in panel-level processes, the cycle time of the exposure process is crucial due to the use of large rectangular panel substrates, but there was a challenge in the high exposure amount. Also, in order to achieve a viscosity usable with a slit coater, a large amount of solvent was required, which sometimes worsened storage stability. Moreover, when using a glass substrate as the base material, adhesion sometimes decreased after reliability testing under high temperature and high humidity compared to when using a silicon wafer substrate.

[0009] Therefore, the present disclosure aims to provide a photosensitive resin composition that can be coated by slit coating when a panel-level process is performed, exhibits good resolution even with a small exposure, has good storage stability, and has good adhesion after reliability testing, as well as a method for producing a cured relief pattern using the photosensitive resin composition.

[0010] Examples of embodiments of the present disclosure are listed below. (1) A photosensitive resin composition used in a panel-level packaging process, comprising: (A) at least one selected from the group consisting of (A-1) polyimide precursors and (A-2) polyimide: 100 parts by mass; (B) photopolymerization initiator: 0.5 to 20 parts by mass; (C) organic solvent: 300 to 800 parts by mass, wherein the (B) photopolymerization initiator has the following general formula (1): A compound represented by {In formula (1), Ra represents a monovalent organic group having 1 to 10 carbon atoms, Rb represents a monovalent organic group having 1 to 20 carbon atoms, Rc represents a monovalent organic group having 1 to 10 carbon atoms, and Rd represents a monovalent organic group having 1 to 10 carbon atoms.} or general formula (2): A photosensitive resin composition comprising a compound represented by {In formula (2), Re represents a monovalent organic group having 1 to 20 carbon atoms, and Rf represents a monovalent organic group having 1 to 10 carbon atoms}, wherein the viscosity measured with an E-type viscometer at 23°C is 0.02 to 1.0 Pa·s. (2) The photosensitive resin composition according to (1), wherein Rb is an organic group having an aromatic group, and Rc is a methyl group. (3) The photosensitive resin composition according to (1) or (2), wherein Re is an organic group having an alicyclic structure, and Rf is a methyl group, a phenyl group, or a tolyl group. (4) The photosensitive resin composition according to any one of (1) to (3), wherein the (C) organic solvent comprises at least one selected from N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, tetramethylurea, and dimethyl sulfoxide. (5) The photosensitive resin composition according to any one of (1) to (4), wherein the i-line absorbance of an N-methyl-2-pyrrolidone solution at a concentration of 0.1% by mass of at least one selected from the (A)(A-1) polyimide precursor and the (A-2) polyimide is 0.05 to 1.3. (6) The photosensitive resin composition according to (5), wherein the i-line absorbance is 0.05 to 0.6. (7) The (A-1) polyimide precursor comprises the following general formula (3): (In formula (3), X １ Y is a tetravalent organic group having 4 to 40 carbon atoms. １ It is a divalent organic group having 6 to 40 carbon atoms, n １ is an integer between 2 and 150, and R １ and R ２ Each of these independently represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms.) A photosensitive resin composition according to any one of (1) to (6). (8) The X １ However, the following general formulas (4) to (6): (7) The photosensitive resin composition according to (7), which is at least one selected from (9) Y １ However, the following general formulas (7) to (9): (10) A photosensitive resin composition according to (1) to (9), wherein the (A-2) polyimide is selected from at least one of the following. (11) A photosensitive resin composition according to any one of (1) to (10), further comprising (D) a nitrogen-containing heterocyclic compound. (12) A photosensitive resin composition according to any one of (1) to (11), further comprising (E) a photopolymerizable unsaturated monomer. (13) A method for producing a cured film containing polyimide, comprising the step of curing the photosensitive resin composition according to any one of (1) to (12) to form a cured film containing polyimide. (14) A method for producing a cured relief pattern, comprising the following steps: (1) applying a photosensitive resin composition according to any of (1) to (12) to a substrate to form a photosensitive resin layer on the substrate; (2) exposing the photosensitive resin layer to light; (3) developing the photosensitive resin layer after exposure to form a relief pattern; and (4) heat-treating the relief pattern to form a cured relief pattern.

[0011] The present disclosure provides a photosensitive resin composition that can be coated by slit coating when a panel-level process is performed, exhibits good resolution even with a small exposure, has good storage stability, and has good adhesion after reliability testing, as well as a method for producing a cured relief pattern using the photosensitive resin composition.

[0012] <Photosensitive Resin Composition> The photosensitive resin composition of this disclosure comprises the following components: (A) at least one selected from the group consisting of (A-1) polyimide precursor and (A-2) polyimide: 100 parts by mass; (B) photopolymerization initiator: 0.5 to 20 parts by mass; (C) organic solvent: 300 to 800 parts by mass, wherein the (B) photopolymerization initiator has a specific structure and its viscosity, as measured with an E-type viscometer at 23°C, is 0.02 to 1.0 Pa·s. The photosensitive resin composition of this embodiment can be used as a negative-type photosensitive resin composition.

[0013] Component (A) contains at least one selected from the group consisting of (A-1) a polyimide precursor and (A-2) a polyimide.

[0014] (A-1) Polyimide Precursor The polyimide precursor according to this embodiment is not limited as long as it is a precursor that becomes a polyimide by cyclization, but is represented by the following general formula (3): (In formula (3), X １ is a tetravalent organic group having 4 to 40 carbon atoms, Y １ is a divalent organic group having 6 to 40 carbon atoms, n １ is an integer from 2 to 150, and R １ and R ２ each independently represent a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms.) It is preferably a structure represented by.

[0015] In the above general formula (3), the organic group may be an organic group containing heteroatoms other than carbon and hydrogen, or an organic group consisting of carbon and hydrogen atoms. In the present disclosure, examples of heteroatoms include nitrogen atoms, oxygen atoms, and sulfur atoms. n in general formula (3) １ is not limited as long as it is an integer from 2 to 150, but from the viewpoints of the photosensitive characteristics and mechanical characteristics of the photosensitive resin composition, an integer from 3 to 100 is preferable, and an integer from 5 to 70 is more preferable.

[0016] At least one of R １ and R ２ in the above general formula (3) is preferably a group further containing at least one polymerizable group selected from an acid polymerizable group, a base polymerizable group, and a radical polymerizable group. Here, in the present disclosure, the acid polymerizable group, the base polymerizable group, and the radical polymerizable group each refer to a group that can be polymerized by the action of an acid, a base, or a radical.

[0017] At least one of R １ and R ２ in the above general formula (3) is the following general formula (15): (In the formula, L １ , L ２ and L ３ each independently represent a hydrogen atom or a monovalent organic group having 1 to 3 carbon atoms, and m１ is preferably a monovalent organic group represented by “an integer of 2 to 10”.

[0018] (A-1) Method for preparing polyimide precursor The (A-1) polyimide precursor is obtained by reacting a tetracarboxylic dianhydride containing the aforementioned tetravalent organic group X １ with alcohols having a photopolymerizable unsaturated double bond and optionally alcohols having no unsaturated double bond to prepare a partially esterified tetracarboxylic acid (hereinafter also referred to as an acid / ester form), and then subjecting this to amide polycondensation with diamines containing the aforementioned divalent organic group Y １ is obtained by

[0019] (Preparation of acid / ester form) In the present embodiment, as the tetracarboxylic dianhydride containing the tetravalent organic group X １ preferably used for preparing the (A-1) polyimide precursor, examples include pyromellitic dianhydride, diphenyl ether-3,3′,4,4′-tetracarboxylic dianhydride, benzophenone-3,3′,4,4′-tetracarboxylic dianhydride, biphenyl-3,3′,4,4′-tetracarboxylic dianhydride, diphenyl sulfone-3,3′,4,4′-tetracarboxylic dianhydride, diphenylmethane-3,3′,4,4′-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, and 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane and the like. Among these, preferably pyromellitic dianhydride, diphenyl ether-3,3′,4,4′-tetracarboxylic dianhydride, benzophenone-3,3′,4,4′-tetracarboxylic dianhydride, and biphenyl-3,3′,4,4′-tetracarboxylic dianhydride can be mentioned, but it is not limited thereto. These may be used alone or in combination of two or more.

[0020] Among these, from the viewpoints of the Tg and resolution of the obtained polyimide, X １ is represented by the following general formulas (4) to (6): It is preferable to include at least one selected from the structures represented by the above general formulas (4) to (6), and more preferably at least one selected from the structures represented by the above general formulas (4) to (6).

[0021] In this embodiment, suitable photopolymerizable alcohols having unsaturated double bonds for preparing (A-1) polyimide precursors include, for example, 2-acryloyloxyethyl alcohol, 1-acryloyloxy-3-propyl alcohol, 2-acrylamidoethyl alcohol, methylol vinyl ketone, 2-hydroxyethyl vinyl ketone, 2-hydroxy-3-methoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-phenoxypropyl acrylate, 2-hydroxy-3-butoxypropyl acrylate, 2-hydroxy-3-t-butoxypropyl acrylate, and 2-hydroxy-3-cyclohexyl acrylate. Examples include cypropyl acrylate, 2-methacryloyloxyethyl alcohol, 1-methacryloyloxy-3-propyl alcohol, 2-methacrylamidoethyl alcohol, methylol vinyl ketone, 2-hydroxyethyl vinyl ketone, 2-hydroxy-3-methoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3-phenoxypropyl methacrylate, 2-hydroxy-3-butoxypropyl methacrylate, 2-hydroxy-3-t-butoxypropyl methacrylate, 2-hydroxyethyl methacrylate (HEMA), and 2-hydroxy-3-cyclohexyloxypropyl methacrylate.

[0022] In addition to the above-mentioned photopolymerizable alcohols having unsaturated double bonds, alcohols without unsaturated double bonds, such as methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, 1-pentanol, 2-pentanol, 3-pentanol, neopentyl alcohol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 3-octanol, 1-nonanol, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, tetraethylene glycol monomethyl ether, tetraethylene glycol monoethyl ether, and benzyl alcohol, can also be used in combination with a portion of these alcohols.

[0023] Furthermore, as a polyimide precursor, a non-photosensitive polyimide precursor prepared solely from alcohols that do not have the above-mentioned unsaturated double bonds may be used in combination with (A-1) the photosensitive polyimide precursor of this embodiment. From the viewpoint of resolution, it is preferable that the non-photosensitive polyimide precursor be 200 parts by mass or less, based on 100 parts by mass of the photosensitive polyimide precursor of this embodiment.

[0024] By dissolving and mixing the above-mentioned suitable tetracarboxylic dianhydride and the above-mentioned alcohols in a solvent as described later, in the presence of a basic catalyst such as pyridine, at a temperature of 20 to 50°C for 4 to 10 hours, the esterification reaction of the acid dianhydride proceeds, and the desired acid / ester product can be obtained.

[0025] (Preparation of Polyimide Precursor) The above acid / ester compound (typically an acid / ester compound existing in solution in a solvent described later) was mixed with a suitable dehydrating condensation agent, such as dicyclohexylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, and N,N'-disuccinimidyl carbonate, under ice cooling to obtain a polyacid anhydride from the acid / ester compound. A divalent organic group Y was added to the polyacid anhydride from the acid / ester compound. １The desired polyimide precursor can be obtained by adding a dropwise solution or dispersion of diamines containing the above compound in a separate solvent and carrying out amide polycondensation. Alternatively, the desired polyimide precursor can be obtained by acid-chloridizing the acid portion of the above acid / ester compound with thionyl chloride or the like, and then reacting it with the diamine compound in the presence of a base such as pyridine. In particular, the polymerization method in which the compound is acid-chloridized before reacting it with the diamine compound is preferred because the absorbance of the resulting polymer tends to be low.

[0026] Divalent organic group Y which is preferably used in this embodiment １Examples of diamines containing these include p-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3 '-diaminobiphenyl, 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4 -aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]ether, bis[4-(3-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2 -Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,4-bis(3-aminopropyldimethylsilyl)benzene, ortho-tolidine sulfone, 9,9-bis(4-aminophenyl)fluorene, and those in which some of the hydrogen atoms on the benzene ring are substituted with methyl groups, ethyl groups, hydroxymethyl groups, hydroxyethyl groups, halogens, etc., for example, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 2,Examples include, but are not limited to, 2'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyloxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl, and mixtures thereof.

[0027] Among these, in terms of the high Tg and resolution of the resulting polyimide resin, Y １ The following general formulas (7) to (9): It is preferable to include at least one selected from the structures represented by the above general formulas (7) to (9), and more preferably at least one selected from the structures represented by the above general formulas (7) to (9).

[0028] After the amide polycondensation reaction is complete, any water-absorbing by-products of the dehydrating condensation agent present in the reaction solution are filtered off as needed. Then, a poor solvent such as water, an aliphatic lower alcohol, or a mixture thereof is added to the obtained polymer component to precipitate it. Further purification of the polymer is performed by repeating the redissolution and reprecipitation operations, and the polymer is then vacuum-dried to isolate the target polyimide precursor. To improve the degree of purification, the solution of this polymer may be passed through a column packed with anion and / or cation exchange resin swollen with a suitable organic solvent to remove ionic impurities.

[0029] The molecular weight of the (A-1) polyimide precursor is preferably 8,000 to 150,000, and more preferably 9,000 to 50,000, when measured by weight-average molecular weight in polystyrene equivalent by gel permeation chromatography. When the weight-average molecular weight of the (A-1) polyimide precursor is 8,000 or more, the mechanical properties are good, and when it is 150,000 or less, the dispersibility in the developer is good and the resolution performance of the relief pattern is good. Tetrahydrofuran and N-methyl-2-pyrrolidone are recommended as developing solvents for gel permeation chromatography. The weight-average molecular weight is determined from a calibration curve prepared using standard monodisperse polystyrene. As the standard monodisperse polystyrene, it is recommended to select from the organic solvent-based standard sample STANDARD SM-105 manufactured by Showa Denko Corporation.

[0030] (A-2) Polyimide The (A-2) polyimide in this embodiment is not limited as long as it can be dissolved in a general organic solvent, and may be a soluble polyimide. Suitable organic solvents for use in this embodiment include N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, tetramethylurea, γ-butyrolactone, dimethyl sulfoxide, and N-methyl-2-pyrrolidone, as well as mixtures thereof. As for the soluble polyimide, it is preferable that it dissolves in the above-mentioned organic solvent at a concentration of 5% by mass or more. The (A-2) polyimide in this embodiment is not limited as long as it can be dissolved in a general organic solvent, but from the viewpoint of chemical resistance and elongation of the cured film, it is preferable that it does not contain fluorine atoms in its structure. From the viewpoint of chemical resistance, the (A-2) polyimide in this embodiment is preferably photopolymerizable functional groups at the main chain ends and / or main chain side chains. (A-2) The resolution can be increased by having a photopolymerizable functional group in the polyimide. Here, the photopolymerizable functional group is not limited to any functional group that can be polymerized by light irradiation, and examples include methacryloyl group, acryloyl group, methacrylamide group, acrylamide group, and styryl group. From the viewpoint of resolution, it is preferable that (A-2) polyimide has at least one selected from methacryloyl group, acryloyl group, and styryl group in the main chain end and / or main chain side chain. In this embodiment, the main chain end refers to the terminal structure of the polyimide main chain composed of an acidic dianhydride and a diamine. The method of introducing the photopolymerizable functional group to the polyimide main chain end is not particularly limited. The photopolymerizable functional group can be introduced to the acidic dianhydride and / or diamine, and then polycondensation of the acidic dianhydride and diamine can be performed, or the photopolymerizable functional group can be introduced to the main chain end structure after obtaining the polyimide.

[0031] The (A-2) polyimide according to this embodiment is given by the following general formula (10): {In formula (10), X represents a tetravalent organic group having 4 to 32 carbon atoms, and Y represents a divalent organic group having 4 to 40 carbon atoms, n ２x is an integer between 2 and 150. It can be represented as}.

[0032] In general formula (10), X is not limited to any tetravalent organic group having 4 to 32 carbon atoms, but from the viewpoint of chemical resistance, it is preferable that X has 6 or more carbon atoms, more preferably 8 or more, and particularly preferable that it has 10 or more. From the viewpoint of resolution, the number of carbon atoms in X is preferably 30 or less, more preferably 28 or less, and particularly preferable that it is 26 or less.

[0033] In general formula (10), Y is not limited to any divalent organic group having 4 to 40 carbon atoms, but from the viewpoint of chemical resistance, it is preferable that Y has 6 or more carbon atoms, more preferably 8 or more, and particularly preferable 10 or more. From the viewpoint of resolution, the number of carbon atoms in Y is preferably 30 or less, more preferably 28 or less, and particularly preferable 26 or less.

[0034] n in general formula (10) ２ While not limited to integers between 2 and 150, integers between 3 and 100 are preferred, and integers between 5 and 70 are more preferred, from the viewpoint of the photosensitive properties and mechanical properties of the photosensitive resin composition.

[0035] In this embodiment, X preferably contains an aromatic group, and is represented by the following general formulas (22) to (27): It is more preferable to include at least one selected from the structures represented by the above general formulas. From the viewpoint of the glass transition temperature (Tg) after heat curing, X in this embodiment is preferably selected from the structures represented by the above general formulas (23) and (24), and from the viewpoint of the elongation of the film after heat curing, it is preferable to include at least one selected from the structures represented by the general formulas (22) and (25). From the viewpoint of resolution, X in this embodiment is preferably selected from the structure represented by the general formula (27).

[0036] Y in this embodiment preferably contains an aromatic group, and is of the following general formulas (28), (29), and (30): It is more preferable to include at least one selected from the structures represented by .

[0037] (A-2) Method for preparing polyimide (A-2) Polyimide can be prepared by, for example, polycondensing a tetracarboxylic dianhydride containing the aforementioned tetravalent organic group X with a diamine containing the aforementioned divalent organic group Y to obtain polyamic acid, and then heat-treating it to obtain (A-2) polyimide.

[0038] (Preparation of polyamic acid) (A-2) A tetracarboxylic dianhydride containing a tetravalent organic group X is suitably used to prepare polyamic acid, which is a precursor of polyimide, and is given the following general formula (1T): A compound represented by {In the above formula (1T), X is the same as that defined in the above general formula (10)} is preferred.

[0039] Examples of tetracarboxylic dianhydrides include pyromellitic dianhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride (also known as oxydiphthalic dianhydride, abbreviated as "ODPA"), benzophenone-3,3',4,4'-tetracarboxylic dianhydride, biphenyl-3,3',4,4'-tetracarboxylic dianhydride (abbreviated as "BPDA"), diphenyl sulfone-3,3',4,4'-tetracarboxylic dianhydride, and di Examples include phenylmethane-3,3',4,4'-tetracarboxylic dianhydride, 2,2-bis(3,4-phthalic anhydride)propane, 4,4'-(4,4'-isopropylidene diphenoxy)diphthalic anhydride, 1-(3',4'-dicarboxyphenyl)-1,3,3-trimethylindan-5,6-dicarboxylic dianhydride, and 2,2-bis(3,4-phthalic anhydride)-1,1,1,3,3,3-hexafluoropropane. Preferred examples of tetracarboxylic dianhydrides include pyromellitic dianhydride, diphenyl ether-3,3',4,4'-tetracarboxylic dianhydride, benzophenone-3,3',4,4'-tetracarboxylic dianhydride, 4,4'-(4,4'-isopropylidene diphenoxy)diphthalic acid anhydride, 1-(3',4'-dicarboxyphenyl)-1,3,3-trimethylindan-5,6-dicarboxylic dianhydride, and biphenyl-3,3',4,4'-tetracarboxylic dianhydride, as well as tetracarboxylic dianhydrides represented by the following general formulas (2T) to (7T), but are not limited to these. These may be used individually or in combination of two or more. Among these, the following general formulas (2T) to (7T): At least one selected from the tetracarboxylic dianhydrides represented by is particularly preferred.

[0040] Diamines containing a divalent organic group Y include those with the following general formula (1D): H ２ N-Y-NH ２ A compound represented by (1D) {wherein Y is the same as defined in the general formula (10) above} is preferred.

[0041] Examples of diamines include p-phenylenediamine (abbreviated as "pPD"), m-phenylenediamine, 4,4'-diaminodiphenyl ether (abbreviated as "4,4'-DADPE," also known as 4,4'-oxydianiline, abbreviated as "ODA"), 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfide, 3,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, and 3,4'-diaminodiphenyl sulfone. 3,3'-diaminodiphenylsulfone, 4,4'-diaminobiphenyl, 3,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 4,4'-diamino-2,2'-dimethylbiphenyl (abbreviated as "m-TB"), 4,4'-diaminobenzophenone, 3,4'-diaminobenzophenone, 3,3'-diaminobenzophenone, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-amino Phenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 4,4'-isopropylidenebis[(4-aminophenoxy)benzene], 4,4'-isopropylidenebis(2-aminophenol), 4,4'-[1,4-phenylene-bis(1-methylethylidene)]bisaniline, bis[4-(4-aminophenoxy)phenyl]sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 4,4-bis(4-aminophenoxy)biphenyl, 4,4-bis(3-aminophenoxy)biphenyl, bis[4 -(4-aminophenoxy)phenyl] ether, bis[4-(3-aminophenoxy)phenyl] ether, 1,4-bis(4-aminophenyl)benzene, 1,3-bis(4-aminophenyl)benzene, 9,10-bis(4-aminophenyl)anthracene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 1,Examples include, but are not limited to, 4-bis(3-aminopropyldimethylsilyl)benzene, ortho-tolidine sulfone, and 9,9-bis(4-aminophenyl)fluorene, and those in which some of the hydrogen atoms on the benzene ring are substituted with methyl groups, ethyl groups, hydroxymethyl groups, hydroxyethyl groups, halogens, etc., such as 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 2,2'-dimethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethylthoxy-4,4'-diaminobiphenyl, and 3,3'-dichloro-4,4'-diaminobiphenyl, as well as diamines represented by the following general formulas (7D) to (9D). These can be used individually or mixed together. Among these, the following general formulas (7D) to (9D): At least one selected from the diamines represented by is particularly preferred.

[0042] Polyamic acid can be obtained by dissolving and mixing the above-mentioned tetracarboxylic dianhydride and the above-mentioned diamine in a solvent described later. For example, the reaction conditions involve stirring for 4 to 10 hours at a temperature of 10 to 50°C. The obtained polyamic acid can be isolated and then subjected to an imidation reaction, or it can be subjected to the next imidation reaction without isolation.

[0043] (Preparation of (A-2) Polyimide) The polyamic acid obtained above can be reacted at high temperature with an imidation catalyst added as needed to obtain (A-2) polyimide. Preferably, this can be done by mixing toluene or xylene, which are azeotropic solvents with water, in a glass container equipped with a Dean-Stark apparatus. The reaction conditions are not limited as long as the desired (A-2) polyimide can be obtained, but for example, stirring at a reaction temperature of 150 to 230°C for 4 to 10 hours is possible.

[0044] (A-2) After the polyimide reaction is complete and the mixture has cooled to near room temperature, the obtained polymer components can be added to a poor solvent to precipitate them. Further purification of the polymer can be achieved by repeating the redissolution and reprecipitation operations. After the purification of the polymer, the desired (A-2) polyimide can be isolated by vacuum drying. To improve the degree of purification, the solution of this polymer may be passed through a column packed with an anion exchange resin or a cation exchange resin, or both, swollen with a suitable organic solvent, to remove ionic impurities.

[0045] (A-2) The molecular weight of the polyimide is preferably 8,000 to 150,000, and more preferably 9,000 to 50,000, when measured by the weight-average molecular weight of polystyrene equivalent by gel permeation chromatography. When the weight-average molecular weight of (A-2) polyimide is 8,000 or more, the mechanical properties are good, and when it is 150,000 or less, the dispersibility in the developer is good and the resolution performance of the relief pattern is good. Tetrahydrofuran and N-methyl-2-pyrrolidone are recommended as the developing solvent for gel permeation chromatography. In more detail, the weight-average molecular weight of (A-2) polyimide is measured by the method described in the examples.

[0046] The (A-2) polyimide according to this embodiment is given by the following general formulas (40) to (42): Examples include structures that include at least one of the structures represented by as a repeating unit.

[0047] In this embodiment, at least one selected from (A)(A-1) polyimide precursor and (A-2) polyimide (hereinafter referred to as component (A)) preferably has an i-line absorbance of 0.05 to 1.3 in an N-methyl-2-pyrrolidone solution at a concentration of 0.1% by mass, and more preferably 0.05 to 0.6. If the i-line absorbance of component (A) in the N-methyl-2-pyrrolidone solution at a concentration of 0.1% by mass is 0.05 or higher, the Tg of the cured film tends to be sufficiently high, and if it is 1.3 or lower, light tends to reach the bottom of the film during development, resulting in good resolution. Preferably it is 0.1 or higher, more preferably 0.15 or higher, particularly preferably 0.2 or higher, and even more preferably 0.25 or higher. From the viewpoint of adhesion after reliability testing, preferably it is 1.0 or lower, more preferably 0.8 or lower, particularly preferably 0.6 or lower, even more preferably 0.5 or lower, even more preferably 0.45 or lower, and most preferably 0.3 or lower. When the photosensitive resin composition contains two or more components (A), the i-line absorbance is the absorbance of an N-methyl-2-pyrrolidone solution prepared by mixing each component (A) in the content ratio of components (A) in the photosensitive resin composition, so that the total concentration of components (A) is 0.1% by mass.

[0048] (B) Photopolymerization initiator The photosensitive resin composition according to this embodiment, (B) as a photopolymerization initiator, is the following general formula (1): Compounds represented by {In formula (1), Ra represents a monovalent organic group having 1 to 10 carbon atoms, Rb represents a monovalent organic group having 1 to 20 carbon atoms, Rc represents a monovalent organic group having 1 to 10 carbon atoms, and Rd represents a monovalent organic group having 1 to 10 carbon atoms.} or general formula (2): The present invention includes a compound represented by {Formula (2) {In formula (2), Re represents a monovalent organic group having 1 to 20 carbon atoms, and Rf represents a monovalent organic group having 1 to 10 carbon atoms} or both thereof. In the above general formulas (1) and (2), the organic group may be an organic group containing heteroatoms other than carbon and hydrogen, or an organic group consisting of carbon and hydrogen atoms. Examples of heteroatoms in this disclosure include nitrogen atoms, oxygen atoms, and sulfur atoms.

[0049] In the general formula (1) above, Ra is not limited to any monovalent organic group having 1 to 10 carbon atoms, but from the viewpoint of adhesion after reliability testing, Ra is preferably an alkyl group having 1 to 5 carbon atoms, more preferably a methyl group, an ethyl group, or a propyl group, and particularly preferably an ethyl group. Rb is not limited to any monovalent organic group having 1 to 20 carbon atoms, but from the viewpoint of resolution, it is preferably an organic group having an aromatic group, more preferably an aromatic group having 6 to 20 carbon atoms which may contain heteroatoms, even more preferably an aromatic group which may contain heteroatoms such as a phenyl group, a tolyl group, a naphthyl group, and a thienyl group, and particularly preferably a phenyl group or a tolyl group. Rc is not limited to any monovalent organic group having 1 to 10 carbon atoms, but from the viewpoint of storage stability, it is preferably an alkyl group or a functional group having an alicyclic structure, more preferably a methyl group or a cyclopentylethyl group, and particularly preferably a methyl group. Rd is not limited to any monovalent organic group having 1 to 10 carbon atoms, but from the viewpoint of resolution, an alkyl group having 1 to 5 carbon atoms is preferred, a methyl group, an ethyl group, or a propyl group is more preferred, and a methyl group is particularly preferred. In one embodiment, (B) when the photopolymerization initiator contains a compound represented by general formula (1), it is preferable that the compound contains an organic group having an aromatic group and Rc is a methyl group.

[0050] In the general formula (2) above, Re is not limited to any monovalent organic group having 1 to 20 carbon atoms, but from the viewpoint of storage stability, a monovalent organic group having 5 to 10 carbon atoms, which may have an alicyclic structure, or an organic group having an alicyclic structure is preferred, and a hexyl group, a cyclopentylmethyl group, or a cyclohexylmethyl group is more preferred. Rf is not limited to any monovalent organic group having 1 to 10 carbon atoms, but from the viewpoint of resolution, an alkyl group having 1 to 5 carbon atoms or an aromatic group having 6 to 10 carbon atoms is preferred, a phenyl group, a tolyl group, a methyl group, an ethyl group, or a propyl group is more preferred, and a methyl group, a phenyl group, or a tolyl group is particularly preferred. In one embodiment, when (B) the photopolymerization initiator contains a compound represented by general formula (2), it is preferable that Re is an organic group having an alicyclic structure and Rf is a methyl group, a phenyl group, or a tolyl group.

[0051] From the viewpoint of good resolution even at low exposure levels and storage stability, (B) the photopolymerization initiator is preferably having a phenylthio structure. Furthermore, from the viewpoint of adhesion after reliability testing, (B) the photopolymerization initiator is preferably having a carbazole structure. Among these, from the viewpoint of resolution, storage stability, and adhesion after reliability testing, (B) the photopolymerization initiator is preferably of the following general formulas (16) to (20): It is particularly preferable to include at least one structure represented by . Furthermore, among these, from the viewpoint of resolution, storage stability, and adhesion after reliability testing, (B) the photopolymerization initiator is particularly preferably to contain at least one selected from ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-1-(O-acetyloxime), -2:3-cyclopentyl-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]propanone-1-(O-acetyloxime), 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime), 1,2-propanedione-3-cyclohexyl-1-[4-(phenylthio)phenyl]-2-(O-acetyloxime), and 1,2-propanedione-3-cyclopentyl-1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime).

[0052] The reason why the (B) photopolymerization initiator in this embodiment, by containing a carbazole structure or a phenylthiophenyl structure, exhibits good resolution with low exposure, has good storage stability, and provides a photosensitive resin composition with good adhesion after reliability testing is not clear, but the inventors believe it is as follows: The carbazole structure and phenylthiophenyl structure have high i-line absorbance, so energy is excited by a small amount of light, generating radicals. Furthermore, because these structures are highly hydrophobic, they are resistant to the water that may be contained in the large amount of solvent required for photosensitive resin compositions for panel-level packages, making them less susceptible to oxime structure cleavage by water molecules and suppressing the dark reaction of the initiator during storage. In addition, since the glass substrate and the polyimide polymer are adhered to each other via hydrogen bonds, in the case of ordinary photosensitive resin compositions, water molecules break the hydrogen bonds under high temperature and high humidity, reducing adhesion. On the other hand, when the photosensitive resin composition containing the (B) photopolymerization initiator according to this embodiment is used as a film, the carbazole structure and phenylthio structure remain in the film after photodegradation, causing nitrogen atoms and sulfur atoms to interact with the glass substrate. Furthermore, the benzene ring portion of the (B) photopolymerization initiator interacts with the polymer, resulting in effects such as improved adhesion. These effects are even more pronounced in polymers whose i-line absorbance falls within a specific range.

[0053] The (B) photopolymerization initiator according to this embodiment may include other photopolymerization initiators, to the extent that they do not affect other components. Examples of other photopolymerization initiators include benzophenone compounds such as benzophenone, o-benzoylmethyl benzoate, 4-benzoyl-4'-methyldiphenyl ketone, dibenzyl ketone, and fluorenone; acetophenone compounds such as 2,2'-diethoxyacetophenone, 2-hydroxy-2-methylpropiophenone, and 1-hydroxycyclohexylphenyl ketone; thioxanthone compounds such as thioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, and diethylthioxanthone; benzyl compounds such as benzyl, benzyldimethyl ketal, and benzyl-β-methoxyethyl acetal; and benzoin compounds such as benzoin and benzoin methyl ether. Examples include oxime compounds such as 1-phenyl-1,2-butanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-methoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 1-phenyl-1,2-propanedione-2-(o-benzoyl)oxime, 1,3-diphenylpropanetrione-2-(o-ethoxycarbonyl)oxime, and 1-phenyl-3-ethoxypropanetrione-2-(o-benzoyl)oxime; N-arylglycine compounds such as N-phenylglycine; peroxides such as benzoyl perchloride, aromatic biimidazole compounds, and titanocene compounds.

[0054] (B) The content of the photopolymerization initiator is 0.5 parts by mass or more and 20 parts by mass, based on 100 parts by mass of component (A). By having 0.5 parts by mass or more, the photoreaction is initiated, and by having 20 parts by mass or less, film degradation of the cured film is suppressed. More preferably 1 part by mass or more and 15 parts by mass or less, even more preferably 2 parts by mass or more and 12 parts by mass or less, and particularly preferably 3 parts by mass or more and 10 parts by mass or less.

[0055] (C) Organic solvent The organic solvent (C) according to this embodiment is not limited to any solvent that can uniformly disperse and dissolve the component (A) and the photopolymerization initiator (B) and other additives according to this embodiment. Examples of these include N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, tetramethylurea, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl sulfoxide, cyclohexanone, diethyl oxalate, ethyl lactate, methyl lactate, butyl lactate, γ-butyrolactone, propylene glycol monomethyl ether acetate, benzyl alcohol, phenyl glycol, tetrahydrofurfuryl alcohol, diethylene glycol dimethyl ether, 1,4-dichlorobutane, o-dichlorobenzene, anisole, xylene, and mesitylene. These can be used individually, or two or more can be mixed together.

[0056] (C) The organic solvent contains at least one selected from N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, tetramethylurea, and dimethyl sulfoxide, which is preferable for this embodiment because it makes it easier to adjust the viscosity at 23°C to a range of 0.02 to 1.5 Pa·s or 0.02 to 1.0 Pa·s. From the viewpoint of improving resolution, film thickness uniformity, storage stability, and obtaining good resolution even with low exposure, N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, or 3-methoxy-N,N-dimethylpropanamide is preferred, and N-ethyl-2-pyrrolidone is particularly preferred.

[0057] The content of (C) organic solvent in the photosensitive resin composition according to this embodiment is 300 to 800 parts by mass per 100 parts by mass of component (A). If the content of (C) organic solvent is 300 parts by mass or more, component (A) and (B) photopolymerization initiator can be dissolved, and if it is 800 parts by mass or less, the required film thickness as an insulating film can be obtained. The content of (C) organic solvent is more preferably 350 parts by mass or more, even more preferably 400 parts by mass or more, and particularly preferably 450 parts by mass or more. The content of (C) organic solvent is more preferably 750 parts by mass or less, even more preferably 700 parts by mass or less, and particularly preferably 650 parts by mass or less.

[0058] (C) From the viewpoint of uniformity of the film thickness of the resulting coating, it is preferable that the total mass of the organic solvent contains less than 10% by mass of a solvent with a boiling point of 160°C or lower, or contains none (or 0% by mass). Examples of solvents with a boiling point of 160°C or lower include N,N-dimethylformamide, cyclohexanone, ethyl lactate, methyl lactate, propylene glycol monomethyl ether acetate, 1,4-dichlorobutane, anisole, and xylene.

[0059] <Viscosity> The viscosity of the photosensitive resin composition according to this embodiment, as measured with an E-type viscometer at 23°C, is preferably 0.02 to 1.5 Pa·s or 0.02 to 1.0 Pa·s, more preferably 0.08 to 1.4 Pa·s, even more preferably 0.1 to 1.3 Pa·s, and particularly preferably 0.12 Pa·s to 1.0 Pa·s. If the viscosity of the photosensitive resin composition according to this embodiment is 0.02 Pa·s or higher, there will be no leakage during slit coating, and a coating film with sufficient thickness can be obtained. If it is 1.5 Pa·s or lower, clogging will not occur during slit coating, and a coating film with good in-plane uniformity can be obtained. The lower limit of the viscosity measured with an E-type viscometer at 23°C is more preferably 0.08 Pa·s or higher, even more preferably 0.1 Pa·s or higher, and particularly preferably 0.12 Pa·s or higher. The upper limit of viscosity measured with an E-type viscometer at 23°C is more preferably 1.4 Pa·s or less, even more preferably 1.3 Pa·s or less, even more preferably 1.2 Pa·s or less, particularly preferably 1.0 Pa·s or less, even more preferably 0.8 Pa·s or less, even more preferably 0.6 Pa·s or less, particularly preferably 0.4 Pa·s or less, and most preferably 0.2 Pa·s or less. In detail, the viscosity of the photosensitive resin composition according to this embodiment is measured by the method described in the examples.

[0060] (D) Nitrogen-containing heterocyclic compound The photosensitive resin composition according to this embodiment may further contain (D) a nitrogen-containing heterocyclic compound. The inclusion of this compound results in good copper adhesion.

[0061] The nitrogen-containing heterocyclic compound according to this embodiment is not limited to any heterocyclic compound containing a nitrogen atom, but from the viewpoint of improving copper adhesion, triazole compounds, tetraazole compounds, or purine compounds are preferred, and purine compounds or triazole compounds are more preferred. The nitrogen-containing heterocyclic compound according to this embodiment may be used alone or in combination of two or more.

[0062] Specific examples of triazole compounds include, for example, 1H-triazole, 5-methyl-1H-triazole, 5-ethyl-1H-triazole, 4,5-dimethyl-1H-triazole, 5-phenyl-1H-triazole, 4-t-butyl-5-phenyl-1H-triazole, 5-hydroxyphenyl-1H-triazole, phenyltriazole, p-ethoxyphenyltriazole, 5-phenyl-1-(2-dimethylaminoethyl)triazole, 5-benzyl-1H-triazole, hydroxyphenyltriazole, 1,5-dimethyltriazole, 4,5-diethyl-1H-triazole, 1H-benzotriazole, and 2-(5-methyl-2-hydroxyphenyl)benzotriazole. Examples include 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-benzotriazole, 2-(3,5-di-t-butyl-2-hydroxyphenyl)benzotriazole, 2-(3-t-butyl-5-methyl-2-hydroxyphenyl)-benzotriazole, 2-(3,5-di-t-amyl-2-hydroxyphenyl)benzotriazole, 2-(2'-hydroxy-5'-t-octylphenyl)benzotriazole, hydroxyphenylbenzotriazole, tolyltriazole, 5-methyl-1H-benzotriazole, 4-methyl-1H-benzotriazole, 4-carboxy-1H-benzotriazole, and 5-carboxy-1H-benzotriazole.

[0063] Specific examples of tetrazole compounds include, for example, 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 5-amino-1H-tetrazole, and 1-methyl-1H-tetrazole.

[0064] Specific examples of purine compounds include, for example, purine, adenine, guanine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, isoguanine, 2,6-diaminopurine, 9-methyladenine, 2-hydroxyadenine, 2-methyladenine, 1-methyladenine, N-methyladenine, N,N-dimethyladenine, 2-fluoroadenine, 9-(2-hydroxyethyl)adenine, guanine oxime, N-(2-hydroxyethyl)adenine, 8-aminopurine. Examples include noadenine, 6-amino-8-phenyl-9H-purine, 1-ethyladenine, 6-ethylaminopurine, 1-benzyladenine, N-methylguanine, 7-(2-hydroxyethyl)guanine, N-(3-chlorophenyl)guanine, N-(3-ethylphenyl)guanine, 2-azaadenine, 5-azaadenine, 8-azaadenine, 8-azaguanine, 8-azapurine, 8-azaxanthine, and 8-azahypoxanthine, as well as their derivatives.

[0065] If the photosensitive resin composition of this embodiment contains (D) a nitrogen-containing heterocyclic compound, its content is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and even more preferably 0.05 to 5 parts by mass, based on 100 parts by mass of component (A), and may be, for example, 0.01 to 5 parts by mass. When the content of the nitrogen-containing heterocyclic compound (D) is 0.01 parts by mass or more, based on 100 parts by mass of component (A), the adhesion to copper is further improved when the photosensitive resin composition is formed on copper or a copper alloy, while when it is 20 parts by mass or less, the resolution is further improved.

[0066] (E) Photopolymerizable unsaturated monomer The photosensitive resin composition of this embodiment may further contain (E) a photopolymerizable unsaturated monomer in order to improve the resolution of the relief pattern. In this disclosure, a photopolymerizable unsaturated monomer means a monomer having a photopolymerizable unsaturated bond, which undergoes a radical polymerization reaction with a photopolymerization initiator. Preferred monomers include (meth)acrylic compounds, and are not limited to the following, but include, for example: monoacrylate, diacrylate, monomethacrylate, and dimethacrylate of ethylene glycol; monoacrylate, diacrylate, monomethacrylate, and dimethacrylate of polyethylene glycol; monoacrylate, diacrylate, monomethacrylate, and dimethacrylate of propylene glycol; monoacrylate, diacrylate, monomethacrylate, and dimethacrylate of polypropylene glycol; monoacrylate, diacrylate, monomethacrylate, and dimethacrylate of glycerol; diacrylate and dimethacrylate of cyclohexane; and diacrylate of 1,4-butanediol. Examples of compounds include diacrylates and dimethacrylates; diacrylates and dimethacrylates of 1,6-hexanediol; diacrylates and dimethacrylates of neopentyl glycol; monoacrylates, diacrylates, monomethacrylates, and dimethacrylates of bisphenol A; benzene trimethacrylate; isobornyl acrylates and isoboronyl methacrylates; acrylamides and their derivatives; methacrylamides and their derivatives; trimethylolpropane triacrylates and trimethylolpropane trimethacrylates; diacrylates, triacrylates, tetraacrylates, dimethacrylates, trimethacrylates, and tetramethacrylates of pentaerythritol; and compounds such as ethylene oxide adducts or propylene oxide adducts of these compounds. Examples of such monomers include isocyanurate compounds, with tris-(2-acryloxyethyl)isocyanurate being preferred.

[0067] The photopolymerizable unsaturated monomers according to this embodiment may be used alone or in combination of two or more. From the viewpoint of obtaining good resolution even with low exposure, it is preferable to use two or more of the (E) photopolymerizable unsaturated monomers. When using two or more of the (E) photopolymerizable unsaturated monomers, the combinations may be mono(meth)acrylates, di(meth)acrylates, tri(meth)acrylates, and tetra(meth)acrylates with the same number of functional groups from the (meth)acrylic compounds, or combinations of (meth)acrylates with different numbers of functional groups. Among these, the combination of di(meth)acrylate and tri(meth)acrylate is preferred from the viewpoint of obtaining good resolution even with low exposure.

[0068] From the viewpoint of improving the resolution of the relief pattern of the photosensitive resin composition of this embodiment, the content of (E) photopolymerizable unsaturated monomer in the photosensitive resin composition of this embodiment is preferably 1 to 50 parts by mass based on 100 parts by mass of component (A).

[0069] <Other Components> The photosensitive resin composition of this embodiment contains, as essential components, (A) component: at least one selected from the group consisting of (A-1) polyimide precursor and (A-2) polyimide, (B) photopolymerization initiator and (C) organic solvent, and may also contain one or more selected from (D) nitrogen-containing heterocyclic compounds and (E) photopolymerizable unsaturated monomers, but may also optionally contain other components. Examples of such components include hindered phenol compounds, organotitanium compounds, adhesion aids, sensitizers and thermal polymerization inhibitors.

[0070] - To suppress discoloration on the copper surface of the hindered phenol compound, the photosensitive resin composition of this embodiment may optionally contain a hindered phenol compound.

[0071] Examples of hindered phenol compounds include 2,6-di-t-butyl-4-methylphenol, 2,5-di-t-butyl-hydroquinone, octadecyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, isooctyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, 4,4'-methylenebis(2,6-di-t-butylphenol), 4,4'-thiobis(3-methyl-6-t-butylphenol), 4,4'-butylidenebis(3-methyl-6-t-butylphenol), trie Tylene glycol-bis[3-(3-t-butyl-5-methyl-4-hydroxyphenyl)propionate], 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 2,2-thio-diethylenebis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], N,N'-hexamethylenebis(3,5-di-t-butyl-4-hydroxyhydrocinnamamide), 2,2'-methylene-bis(4-methyl-6-t-butylphenol), 2,2'-methylene-bis(4- Ethyl-6-t-butylphenol), pentaerythrityl-tetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate, 1,3,5-trimethyl-2,4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, 1,3,5-tris(3-hydroxy-2,6-dimethyl-4-isopropylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4- t-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris(4-s-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris[4-(1-ethylpropyl)-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, 1,3,5-tris[4-triethylmethyl-3-hydroxy-2,6-dimethylbenzyl]-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione,1,3,5-tris(3-hydroxy-2,6-dimethyl-4-phenylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione,1,3,5-tris(4-t-butyl-3-hydroxy-2,5,6-trimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H )-Trion,1,3,5-Tris(4-t-butyl-5-ethyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-Trion,1,3,5-Tris(4-t-butyl-6-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-Trisazine-2,4,6-(1H,3H,5H)-Trion,1,3,5-Tris(4-t-butyl-6-ethyl-3- (Hydroxy-2,5-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione,1,3,5-tris(4-t-butyl-5,6-diethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione,1,3,5-tris(4-t-butyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-( Examples include, but are not limited to, 1H,3H,5H)-trione, 1,3,5-tris(4-t-butyl-3-hydroxy-2,5-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione, and 1,3,5-tris(4-t-butyl-5-ethyl-3-hydroxy-2-methylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione.

[0072] Among these, 1,3,5-tris(4-t-butyl-3-hydroxy-2,6-dimethylbenzyl)-1,3,5-triazine-2,4,6-(1H,3H,5H)-trione is particularly preferred.

[0073] When the photosensitive resin composition of this embodiment contains a hindered phenol compound, its content is preferably 0.1 to 20 parts by mass, and more preferably 0.5 to 10 parts by mass, based on 100 parts by mass of component (A). When the content of the hindered phenol compound based on 100 parts by mass of component (A) is 0.1 parts by mass or more, for example, when the photosensitive resin composition of this disclosure is formed on copper or a copper alloy, discoloration and corrosion of the copper or copper alloy are prevented, while when it is 20 parts by mass or less, the photosensitivity is excellent.

[0074] • Organic Titanium Compounds The photosensitive resin composition of this embodiment may contain organic titanium compounds. By containing organic titanium compounds in the photosensitive resin composition of this embodiment, a photosensitive resin layer with excellent chemical resistance can be formed even when cured at low temperatures. Examples of organic titanium compounds that can be used in this embodiment include those in which an organic group is bonded to a titanium atom via a covalent bond or ionic bond.

[0075] Specific examples of organotitanium compounds are shown in I) to VII) below: I) Titanium chelate compounds: Among these, titanium chelate compounds having two or more alkoxy groups are preferred because they provide good storage stability for photosensitive resin compositions and yield a good curing pattern. Specific examples include titanium bis(triethanolamine)diisopropoxide, titanium di(n-butoxide)bis(2,4-pentanedione), titanium diisopropoxidebis(2,4-pentanedione), titanium diisopropoxidebis(tetramethylheptanedione), and titanium diisopropoxidebis(ethylacetoacetate). II) Tetraalkoxy titanium compounds: For example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearaloxide, and titanium tetrakis[bis{2,2-(alyloxymethyl)butoxide}]. III) Titanocene compounds: For example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η ５ -2,4-cyclopentadiene-1-yl)bis(2,6-difluorophenyl)titanium and bis(η ５ Examples include (-2,4-cyclopentadiene-1-yl)bis(2,6-difluoro-3-(1H-pyrrole-1-yl)phenyl)titanium.

[0076] IV) Monoalkoxy titanium compounds: For example, titanium tris(dioctyl phosphate) isopropoxide and titanium tris(dodecylbenzenesulfonate) isopropoxide. V) Titanium oxide compounds: For example, titanium oxide bis(pentanedione), titanium oxide bis(tetramethylheptanedione), and phthalocyanine titanium oxide. VI) Titanium tetraacetylacetonate compounds: For example, titanium tetraacetylacetonate. VII) Titanate coupling agents: For example, isopropyltridodecylbenzenesulfonyl titanate.

[0077] Among these, the organotitanium compound is preferably at least one compound selected from I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds, from the viewpoint of achieving better chemical resistance. In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), or bis(η) ５ (-2,4-cyclopentadiene-1-yl)bis(2,6-difluoro-3-(1H-pyrrole-1-yl)phenyl)titanium is preferred.

[0078] When the photosensitive resin composition of this embodiment contains an organic titanium compound, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 2 parts by mass, based on 100 parts by mass of component (A). When the content is 0.05 parts by mass or more, the resulting cured pattern exhibits good heat resistance and chemical resistance, while when it is 10 parts by mass or less, the photosensitive resin composition exhibits excellent storage stability.

[0079] • Adhesion aids: To improve the adhesion between the film formed using the photosensitive resin composition of this embodiment and the substrate, the photosensitive resin composition of this embodiment may optionally contain adhesion aids. Examples of adhesion aids that can be used include aluminum-based adhesion aids and silane coupling agents.

[0080] Examples of aluminum-based adhesives include aluminum tris(ethyl acetate), aluminum tris(acetylacetonate), and ethyl acetate aluminum diisopropylate.

[0081] Examples of silane coupling agents include γ-aminopropyldimethoxysilane, N-(β-aminoethyl)-γ-aminopropylmethyldimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, 3-methacryloxypropyldimethoxymethylsilane, 3-methacryloxypropyltrimethoxysilane, trimethoxyphenylsilane, trimethoxy(p-tolyl)silane, dimethoxymethyl-3-piperidinopropylsilane, diethoxy-3-glycidoxypropylmethylsilane, and N-(3-diethoxymethylsilyl Ropil) succinimide, N-[3-(triethoxysilyl)propyl]phthalamidic acid, benzophenone-3,3'-bis(N-[3-triethoxysilyl]propylamide)-4,4'-dicarboxylic acid, benzene-1,4-bis(N-[3-triethoxysilyl]propylamide)-2,5-dicarboxylic acid, 3-(triethoxysilyl)propyl succinic anhydride, N-phenylaminopropyltrimethoxysilane, 3-ureidopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, and 3-(trialkoxysilyl)propyl succinic anhydride,3-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.: product name KBM803, manufactured by Chisso Corporation: product name Cyra Ace S810), 3-mercaptopropyltriethoxysilane (manufactured by Azmax Co., Ltd.: product name SIM6475.0), 3-mercaptopropylmethyldimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.: product name LS1375, manufactured by Azmax Co., Ltd.: product name SIM6474.0), mercaptomethyltrimethoxysilane (manufactured by Azmax Co., Ltd.: product name SIM6473.5C), mercaptomethylmethyldimethoxysilane (manufactured by Azmax Co., Ltd.: product name SIM6473.0), 3-mercaptopropyldiethoxymethoxysilane, 3-mercaptopropylethoxydimethoxysilane, 3-mercaptopropyltripropoxysilane, 3-mercaptopropyldiethoxypropoxysilane, 3-mercaptopropylethoxydipropoxysilane, 3-mercaptopropyldimethoxypropoxysilane, 3-mercaptopropylmethoxydipropoxysilane, 2-mercaptoethyltrimethoxysilane, 2-mercaptoethyldi Ethoxymethoxysilane, 2-mercaptoethylethoxydimethoxysilane, 2-mercaptoethyltripropoxysilane, 2-mercaptoethyltripropoxysilane, 2-mercaptoethylethoxydipropoxysilane, 2-mercaptoethyldimethoxypropoxysilane, 2-mercaptoethylmethoxydipropoxysilane, 4-mercaptobutyltrimethoxysilane, 4-mercaptobutyltriethoxysilane, and 4-mercaptobutyltripropoxysilaneN-(3-triethoxysilylpropyl)urea (manufactured by Shin-Etsu Chemical Co., Ltd.: product name LS3610, manufactured by Azmax Co., Ltd.: product name SIU9055.0), N-(3-trimethoxysilylpropyl)urea (manufactured by Azmax Co., Ltd.: product name SIU9058.0), N-(3-diethoxymethoxysilylpropyl)urea, N-(3-ethoxydimethoxysilylpropyl)urea, N-(3-tripropoxysilylpropyl)urea, N-(3-diethoxypropoxysilylpropyl)urea, N-(3-ethoxydipropoxysilylpropyl)urea, N-(3-dimethoxypropoxysilylpropyl)urea, N-(3-methoxydipropoxysilylpropyl)urea, N-(3-trimethoxysilylethyl)urea, N-(3-ethoxydimethoxysilylethyl)urea, N-(3-tripropoxysilylethyl)urea, N-(3-tripropoxysilylethyl)urea, N-(3-ethoxydipropoxysilylethyl)urea, N-(3-dimethoxypropoxysilylethyl)urea, N-(3-methoxydipropoxysilylethyl)urea, N-(3-trimethoxysilylbutyl)urea, N-(3-triethoxysilylbutyl)urea, and N-(3-tripropoxysilylbutyl)urea, 3-(m-aminophenoxy)propyltrimethoxysilane (manufactured by Azmax Co., Ltd.: product name SLA0598.0), m-aminophenyltrimethoxysilane (manufactured by Azmax Co., Ltd.: product name SLA0599.0), p-aminophenyltrimethoxysilane (manufactured by Azmax Co., Ltd.: product name SLA0599.1), aminophenyltrimethoxysilane (manufactured by Azmax Co., Ltd.: product name SLA0599.2), 2-(trimethoxysilylethyl)pyridine (manufactured by Azmax Co., Ltd.: product name SIT8396.0), 2-(triethoxysilylethyl)pyridine, 2-(dimethoxysilylmethylethyl)pyridine, 2-(diethoxysilylmethylethyl)pyridine,(3-triethoxysilylpropyl)-t-butylcarbamate, (3-glycidoxypropyl)triethoxysilane, tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-i-propoxysilane, tetra-n-butoxysilane, tetra-i-butoxysilane, tetra-t-butoxysilane, tetrakis(methoxyethoxysilane), tetrakis(methoxy-n-propoxysilane), tetrakis(ethoxyethoxysilane), tetrakis(methoxyethoxyethoxysilane) ), bis(trimethoxysilyl)ethane, bis(trimethoxysilyl)hexane, bis(triethoxysilyl)methane, bis(triethoxysilyl)ethane, bis(triethoxysilyl)ethylene, bis(triethoxysilyl)octane, bis(triethoxysilyl)octadiene, bis[3-(triethoxysilyl)propyl]disulfide, bis[3-(triethoxysilyl)propyl]tetrasulfide, di-t-butoxydiacetoxysilane and di-i-butoxyaluminoxytriethoxysilane,Phenylsilanetriol, methylphenylsilanediol, ethylphenylsilanediol, n-propylphenylsilanediol, isopropylphenylsilanediol, n-butylsiphenylsilanediol, isobutylphenylsilanediol, tert-butylphenylsilanediol, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi-p-tolylsilane, ethylmethylphenylsilanol, n-propylmethylphenylsilanol, isopropylmethylphenylsilanol, n-butylmethylphenylsilanol, isobutylmethyl Tylphenylsilanol, tert-butylmethylphenylsilanol, ethyl n-propylphenylsilanol, ethyl isopropylphenylsilanol, n-butylethylphenylsilanol, isobutylethylphenylsilanol, tert-butylethylphenylsilanol, methyldiphenylsilanol, ethyldiphenylsilanol, n-propyldiphenylsilanol, isopropyldiphenylsilanol, n-butyldiphenylsilanol, isobutyldiphenylsilanol, tert-butyldiphenylsilanol, and triphenylsilanol, etc., and the following general formula (S-1): Examples of silane coupling agents include, but are not limited to, those represented by the respective terms.

[0082] Among these adhesive aids, it is more preferable to use a silane coupling agent from the viewpoint of adhesive strength. As a silane coupling agent, from the viewpoint of storage stability, it is preferable to use one or more selected from phenylsilanetriol, trimethoxyphenylsilane, trimethoxy(p-tolyl)silane, diphenylsilanediol, dimethoxydiphenylsilane, diethoxydiphenylsilane, dimethoxydi-p-tolylsilane, triphenylsilanol, and the silane coupling agents represented by the above general formula (S-1).

[0083] When the photosensitive resin composition of this embodiment contains an adhesive aid, the content of the adhesive aid is preferably in the range of 0.01 to 25 parts by mass, and more preferably in the range of 0.5 to 20 parts by mass, based on 100 parts by mass of component (A). When a silane coupling agent is used as the adhesive aid, the content is preferably 0.01 to 20 parts by mass, based on 100 parts by mass of component (A).

[0084] • Sensitizer The photosensitive resin composition of this embodiment may optionally contain a sensitizer to improve photosensitivity. Examples of the sensitizer include Michla's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, and p-dimethylaminocinnamyridane indano n, p-dimethylaminobenzylideneindanone, 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthiazole, 1,3-bis(4'-dimethylaminobenzal)acetone, 1,3-bis(4'-diethylaminobenzal)acetone, 3,3'-carbonyl-bis(7-diethylaminocoumarin), 3-aceti Examples include 7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin, N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzthiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, and 2-(p-dimethylaminobenzoyl)styrene. These can be used individually or in combinations of two to five types.

[0085] If the photosensitive resin composition of this embodiment contains a sensitizer for improving light sensitivity, the amount thereof is preferably 0.1 to 25 parts by mass, based on 100 parts by mass of component (A).

[0086] - Thermal polymerization inhibitor The photosensitive resin composition of this embodiment may optionally contain a thermal polymerization inhibitor to improve the stability of viscosity and photosensitivity, especially when stored in a solvent-containing solution. Examples of thermal polymerization inhibitors that can be used include hydroquinone, N-nitrosodiphenylamine, p-tert-butylcatechol, phenothiazine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol etherdiaminetetraacetic acid, 2,6-di-tert-butyl-p-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2-nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitroso-N-phenylhydroxylamine ammonium salt, and N-nitroso-N(1-naphthyl)hydroxylamine ammonium salt.

[0087] <Method for manufacturing a cured relief pattern> The method for manufacturing a cured relief pattern according to the present disclosure includes: (1) a step of applying the above-described photosensitive resin composition of the present disclosure to a substrate to form a photosensitive resin layer on the substrate (resin layer formation step); (2) a step of exposing the above-described photosensitive resin layer to light (exposure step); (3) a step of developing the photosensitive resin layer after exposure to form a relief pattern (relief pattern formation step); and (4) a step of heat-treating the above-described relief pattern to form a cured relief pattern (cured relief pattern formation step).

[0088] (1) Resin layer formation process In this process, the photosensitive resin composition of this embodiment is applied to the surface of the substrate, and if necessary, it is then dried to form a photosensitive resin layer. As for the application method, methods used in panel-level processes, such as application with a bar coater, blade coater, curtain coater, slit coater or screen printing machine, or spray application with a spray coater can be used.

[0089] If necessary, the coating film containing the photosensitive resin composition of this embodiment can be dried. Drying methods include air drying, heating with an oven or hot plate, and vacuum drying. Specifically, in the case of air drying or heating, drying can be performed at a temperature of 20°C to 150°C for 1 minute to 1 hour. In this way, a photosensitive resin layer can be formed on the surface of the substrate. In the case of vacuum drying, the achievable vacuum level is not a problem as long as drying is completed, but it can be 100 Pa or less, 80 Pa or less, or 60 Pa or less.

[0090] (2) Exposure process In this process, the photosensitive resin layer formed above is exposed to ultraviolet light or the like using an exposure device such as a contact aligner, mirror projection, or stepper, either through a photomask or reticle having a pattern, or directly. This exposure causes the polymerizable groups of (A-1) polyimide precursor or (A-2) polyimide contained in the photosensitive resin composition and / or the polymerizable groups of (E) photopolymerizable unsaturated monomer to crosslink due to the action of (B) photopolymerization initiator. This crosslinking makes the exposed area insoluble in the developer solution described later, thus enabling the formation of a relief pattern.

[0091] Subsequently, if necessary, post-exposure baking (PEB), pre-development baking, or both may be performed using any combination of temperature and time, for purposes such as improving photosensitivity. The baking conditions are preferably a temperature of 40°C to 120°C and a time of 10 seconds to 240 seconds, but are not limited to this range as long as they do not impair the properties of the photosensitive resin composition.

[0092] (3) Relief pattern formation process In this process, the unexposed portion of the photosensitive resin layer after exposure is developed and removed. As a development method for developing the photosensitive resin layer after exposure (irradiation), any method can be selected and used from conventionally known photoresist development methods, such as the rotary spray method, the paddle method, and the immersion method with ultrasonic treatment. After development, if necessary, a post-development bake may be performed using any combination of temperature and time for purposes such as adjusting the shape of the relief pattern.

[0093] The developer used for development is preferably, for example, a good solvent for the photosensitive resin composition, or a combination of the good solvent and a poor solvent. Preferred good solvents include, for example, N-methyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, cyclopentanone, cyclohexanone, γ-butyrolactone, or α-acetyl-γ-butyrolactone. Preferred poor solvents include, for example, toluene, xylene, methanol, ethanol, isopropyl alcohol, ethyl lactate, propylene glycol methyl ether acetate, or water. When using a mixture of the good solvent and the poor solvent, it is preferable to adjust the ratio of the poor solvent to the good solvent according to the solubility of the polymer in the photosensitive resin composition. Two or more good solvents and poor solvents can be used in combination, for example, several types. The photosensitive resin composition of this embodiment is preferably suitable for development with a developer containing 90% by mass or more of an organic solvent.

[0094] (4) Cured Relief Pattern Formation Process In this process, the relief pattern obtained by the above development is heat-treated to dilute the photosensitive component and convert it into a cured relief pattern. Various methods can be selected for the heat treatment, such as using a hot plate, using an oven, or using a heating oven with a temperature program that can be set. The heat treatment can be carried out, for example, at a temperature of 150°C to 350°C for 30 minutes to 5 hours. The temperature for the heat treatment is preferably 150°C to 250°C, more preferably 150°C to 230°C, and even more preferably 170°C to 230°C. Air may be used as the atmospheric gas during heat curing, or an inert gas such as nitrogen and argon may be used.

[0095] <Method for Manufacturing a Polyimide Cured Film> Another aspect of the present disclosure provides a method for manufacturing a polyimide-containing cured film, comprising the step of curing the photosensitive resin composition described above to form a cured film containing polyimide. The curing conditions for the photosensitive resin composition of this embodiment may be, for example, the same as the baking conditions included in the method for manufacturing a cured relief pattern described above, or the conditions for the cured relief pattern formation step (4). The cured film of this embodiment contains polyimide. The polyimide cured film of this embodiment is formed from the photosensitive resin composition of this embodiment described above, and may be a cured film with a cured relief pattern or a cured film without a cured relief pattern.

[0096] <Semiconductor Device> This disclosure also provides a semiconductor device having a cured relief pattern obtained from the photosensitive resin composition described above. More specifically, a semiconductor device is provided having a substrate which is a semiconductor element and a cured relief pattern. The cured relief pattern may be manufactured using the photosensitive resin composition described above by the method for manufacturing the cured relief pattern described above.

[0097] This disclosure can also be applied to a method for manufacturing a semiconductor device, which uses a semiconductor element as a substrate and includes the method for manufacturing the cured relief pattern described above as part of the process. In this case, the cured relief pattern formed by the method for manufacturing the cured relief pattern of this disclosure can be formed as a surface protective film for a semiconductor device, an interlayer insulating film, an insulating film for redistribution, a protective film for a flip-chip device, or a protective film for a semiconductor device having a bump structure, and can be manufactured by combining it with a known method for manufacturing a semiconductor device.

[0098] <Display Device> This disclosure provides a display device comprising a display element and a cured film provided on the upper part of the display element, wherein the cured film is the cured relief pattern described above. Here, the cured relief pattern may be laminated in direct contact with the display element, or it may be laminated with another layer in between. The cured film can be applied, for example, to surface protective films, insulating films, planarization films, etc. of TFT liquid crystal display elements and color filter elements; protrusions for MVA type liquid crystal display devices; partitions for the cathode of organic EL elements; etc.

[0099] In addition to applications in semiconductor devices as described above, the photosensitive resin composition of this disclosure is also useful for applications such as interlayer insulation of multilayer circuits, cover coatings for flexible copper-clad sheets, solder resist films, and liquid crystal alignment films.

[0100] <Measurement and Evaluation Methods> (1) Weight-average molecular weight The weight-average molecular weight (Mw) of each resin was measured under the following conditions using gel permeation chromatography (on a standard polystyrene basis).

[0101] Pump: JASCO PU-980 Detector: JASCO RI-930 Column Oven: JASCO CO-965 40℃ Column: Showa Denko K.K. Shodex KD-805 / KD-804 / KD-803 in series Standard monodisperse polystyrene: Showa Denko K.K. Shodex STANDARD SM-105 Mobile phase: 0.1 mol / L LiBr / N-methyl-2-pyrrolidone (NMP) Flow rate: 1 mL / min.

[0102] (2) Viscosity measurement The viscosity was measured at 23°C using an E-type viscometer (RE-80R, manufactured by Toki Sangyo Co., Ltd.).

[0103] (3) Absorbance measurement of at least one component selected from (A-1) polyimide precursor and (A-2) polyimide. The absorbance of at least one component selected from (A-1) polyimide precursor and (A-2) polyimide was measured by preparing an N-methyl-2-pyrrolidone solution with a concentration of 0.1% by mass of component (A), filling it into a 1 cm quartz cell, and then measuring the absorbance at 365 nm with a Shimadzu UV-1800 device at a medium scan speed and a sampling pitch of 0.5 nm. In the examples and comparative examples, if two or more polymers produced in the production examples described later were mixed, the absorbance of the mixed polymer mixed in their respective weight ratios was measured.

[0104] (4) Slit Coat Test The photosensitive resin compositions prepared in the Examples and Comparative Examples were coated onto a 300 mm x 300 mm glass substrate with a coating area of ​​295 mm x 295 mm using a slit coater (manufactured by SCREEN Finetech Solutions Co., Ltd.) to produce a photosensitive resin composition film with a glass substrate. The coating was evaluated using the photosensitive resin composition film with a glass substrate. The photosensitive resin compositions prepared in the Examples and Comparative Examples were filled into the nozzle of the slit coater and evaluated according to the following criteria: If the photosensitive resin composition dripped from the slit nozzle after the discharge of the photosensitive resin composition was started and stopped: liquid leakage If the photosensitive resin composition was not discharged from the nozzle: clogging If the coating could be done without liquid leakage or clogging: no problem.

[0105] (5) Minimum exposure evaluation A sputtered Cu wafer substrate was prepared by sputtering 200 nm thick Ti and 400 nm thick Cu in that order onto a 6-inch silicon wafer (manufactured by Fujimi Electronics Industries, Ltd., thickness 625 ± 25 μm) using a sputtering apparatus (L-440S-FHL type, manufactured by Canon Anelva Corporation). The photosensitive resin compositions prepared in the examples and comparative examples were spin-coated onto the sputtered Cu wafer substrate using a spin-coating apparatus (D-spin60A type, manufactured by SOKUDO Corporation), and heated and dried at 110°C for 240 seconds to produce a spin-coated film with a film thickness of 3 μm after heat curing. Using a test pattern reticle with a circular pattern mask size of 5 μm or less in diameter, exposure was performed on this spin-coated film using an exposure machine (product name: FPA-3030iWa, manufactured by Canon Corporation) at 60 mJ / cm². ２ From 10 mJ / cm ２ I-line irradiation was performed by varying the exposure within a step range. Next, the coating film formed on the sputtered Cu wafer was spray-developed using cyclopentanone in a developer (D-SPIN636, manufactured by Dainippon Screen Co., Ltd.), and rinsed with propylene glycol methyl ether acetate to obtain a circular recessed relief pattern of the photosensitive resin composition. The development time for spray development was defined as 1.4 times the minimum time required for the unexposed areas of the photosensitive resin composition to develop in the spin-coated film described above.

[0106] Using a temperature-boosting programmable curing furnace (VF-2000 model, manufactured by Koyo Lindbergh), sputtered Cu wafers with circular recessed relief patterns were heated to 230°C at a rate of 5°C / min under a nitrogen atmosphere and held at 230°C for 2 hours to obtain circular recessed relief patterns of polyimide with a mask size of 5 μm on a sputtered Cu wafer substrate. For each obtained pattern, the pattern shape and width of the pattern area were observed under an optical microscope, and for the circular pattern with a mask size of 5 μm, the exposure amount that satisfies the following resolution evaluation criteria was determined to be the minimum exposure amount (mJ / cm²). ２ )

[0107] <Resolution Evaluation Criteria> For circular recessed relief patterns, the ability to create an opening was judged to be acceptable if the following criteria (I) and (II) were both met: (I) The area of ​​the pattern opening is at least half the area of ​​the corresponding pattern mask opening. (II) The pattern cross-section is not tapered, and there is no undercutting, swelling, or bridging.

[0108] (6) Storage Stability Evaluation The photosensitive resin compositions prepared in the examples and comparative examples were left to stand at 23°C for 4 weeks under light shielding, and the exposure amount (minimum exposure amount) was determined in the same manner as in (5) above. The difference (difference in exposure change) between the minimum exposure amount value determined in (6) and the minimum exposure amount value determined in (5) was calculated. The following evaluation criteria: Excellent: Difference in exposure change amount is 0 mJ / cm ２ Good in this case: The difference in exposure change is 0 mJ / cm ２ Super 30mJ / cm ２ The following is acceptable: The difference in exposure change is 30 mJ / cm². ２ Super 60mJ / cm ２ The following case is not acceptable: The difference in exposure change is 60 mJ / cm². ２ Storage stability was evaluated under the supercharged conditions.

[0109] (7) Adhesion after reliability test The photosensitive resin composition film with glass substrate manufactured in the slit coat test described in (4) above was cut to 100 mm x 100 mm and then exposed to light on the entire surface of the film with the minimum exposure dose using the exposure machine described above. After that, heat treatment was performed using the method described in (5). The obtained samples were treated with a high-accelerated lifetime test apparatus (Hirayama Seisakusho, PC-422R8D) at 130°C and 85% RH for 168 hours and then evaluated according to the cross-cut method of the JIS K 5600-5-6 standard based on the following criteria: "Excellent": The number of grids in the polyimide insulating layer in contact with the glass substrate is 80 or more to 100 or less "Good": The number of grids in the polyimide insulating layer in contact with the glass substrate is 60 or more to less than 80 "Acceptable": The number of grids in the polyimide insulating layer in contact with the glass substrate is 40 or more to less than 60 "Poor": The number of grids in the polyimide insulating layer in contact with the glass substrate is less than 40.

[0110] <Production Example 1> 4,4'-oxydiphthalic acid dianhydride (ODPA) (21.2 g, used after drying at 140°C for 12 hours), HEMA (18.1 g), hydroquinone (0.05 g), pyridine (23.9 g), and diethylene glycol dimethyl ether (150 mL) were mixed and stirred at 60°C for 2 hours to produce a diester of ODPA and HEMA. The reaction mixture was then cooled to -10°C, and SOCl was added while maintaining the temperature at -10±4°C. ２ (17.1 g) was added over 1 hour. The reaction mixture was diluted with 50 mL of NMP, and then a solution of 4,4'-diaminodiphenyl ether (4,4'-DADPE) (11.7 g) dissolved in 100 mL of NMP was added dropwise over 1 hour while maintaining the temperature at -10 ± 4°C, and the mixture was stirred for 2 hours. Next, the mixture was added to 6 L of water to precipitate the polyimide precursor, and the mixture of water and polyimide precursor was stirred at a speed of 5000 rpm for 15 minutes. The polyimide precursor was filtered out, added again to 4 L of water, stirred for a further 30 minutes, and filtered again. The obtained polyimide precursor was then dried under reduced pressure at 45°C for 3 days to obtain polymer A-1. The weight-average molecular weight (Mw) of polymer A-1 was measured to be 16,000.

[0111] <Preparation Example 2> 155 g (0.5 mol) of 4,4'-oxydiphthalic acid dianhydride (ODPA) was placed in a 2-liter separable flask, and 135 g (1.04 mol) of 2-hydroxyethyl methacrylate (HEMA) and 400 ml of γ-butyrolactone were added and stirred at room temperature. 79.1 g of pyridine was added while stirring and the mixture was stirred for 16 hours. Next, under ice cooling, a solution of 203 g of dicyclohexylcarbodiimide (DCC) dissolved in 200 ml of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring. Subsequently, 89 g (0.44 mol) of 4,4'-diaminodiphenyl ether (4,4'-DADPE) suspended in 280 ml of γ-butyrolactone was added over 60 minutes while stirring. After further stirring at room temperature for 4 hours, 40 ml of ethyl alcohol was added and the mixture was stirred for 1 hour, and then 1 liter of γ-butyrolactone was added. The precipitate formed in the reaction mixture was removed by filtration to obtain the reaction solution. The obtained reaction solution was added to 4 liters of ethyl alcohol to produce a precipitate consisting of crude polymer. The produced crude polymer was filtered off and dissolved in 2.5 liters of tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to 30 liters of water to precipitate the polymer, and the resulting precipitate was filtered off and then vacuum dried to obtain a powdered polymer (polymer A-2). The molecular weight of polymer A-2 was measured by gel permeation chromatography (on a standard polystyrene basis), and the weight-average molecular weight (Mw) was found to be 24,000.

[0112] <Production Example 3> Polymer A-3 was obtained by carrying out the reaction in the same manner as described in Production Example 2, except that 147 g (0.5 mol) of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) was used instead of 155 g of ODPA as described in Production Example 2. The molecular weight of polymer A-3 was measured by gel permeation chromatography (on a standard polystyrene basis), and the weight-average molecular weight (Mw) was 20,000.

[0113] <Production Example 4> Polymer A-4 was obtained by carrying out the reaction in the same manner as in Production Example 2, except that 94 g (0.44 mol) of 2,2'-dimethyl-4,4-diaminobiphenyl (m-TB) was used instead of 89 g of 4,4'-DADPE as described in Production Example 2. The molecular weight of polymer A-4 was measured by gel permeation chromatography (on a standard polystyrene basis), and the weight-average molecular weight (Mw) was 21,000.

[0114] <Production Example 5> Polymer A-5 was obtained by carrying out the reaction in the same manner as in Production Example 1, except that 12.4 g of 2,2'-dimethyl-4,4-diaminobiphenyl (m-TB) was used instead of 11.7 g of 4,4'-DADPE described in Production Example 1. The molecular weight of polymer A-5 was measured by gel permeation chromatography (on a standard polystyrene basis), and the weight-average molecular weight (Mw) was 18,000.

[0115] <Production Example 6> In a flask equipped with a stirrer and condenser, 20.8 g (40.0 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride was dissolved in 100 g of N-methylpyrrolidone at a temperature between 20°C and 30°C. Subsequently, 15.3 g (37.2 mmol) of 4,4'-isopropylidenebis[(4-aminophenoxy)benzene] was added and the mixture was stirred for 1 hour. Then, while flowing nitrogen, the temperature was raised to 190°C, stirred for 5 hours, and cooled to below 30°C. Subsequently, the mixture was diluted with 50 g of tetrahydrofuran, precipitated in 2 L of methanol, filtered, and recovered. The mixture was then vacuum-dried at 45°C for 1 day to obtain polyimide resin (A-6). The weight-average molecular weight of the obtained polyimide A-6 was 18,000.

[0116] <Production Example 7> 20.80 g (40 mmol) of 4,4'-(4,4'-isopropylidene diphenoxy)diphthalic anhydride was dissolved in 70 g of N-methylpyrrolidone (NMP). Subsequently, 9.08 g (35.2 mmol) of 4,4'-isopropylidene bis(2-aminophenol) was dissolved in 50 g of NMP and added dropwise over 1 hour at a temperature of 10°C to 25°C. After stirring at 25°C for 30 minutes, 10 g of toluene was added, and the reaction was carried out at 200°C for 4 hours while flowing nitrogen, and then cooled to 25°C. Next, 15.3 g (100 mmol) of 4-(chloromethyl)styrene, 16.6 g (120 mmol) of potassium carbonate, 1.66 g (12 mmol) of potassium iodide, and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical were added, and the mixture was reacted at 95°C for 15 hours. After cooling to 25°C, the mixture was diluted with 120 g of tetrahydrofuran. Subsequently, the reaction mixture was added dropwise to a mixture of 1.8 liters of methanol and 0.6 L of water, stirred for 15 minutes, and then the polyimide resin was filtered. Next, the polyimide resin was re-slurred with 1 L of water, filtered, re-slurred again with 1 L of methanol, filtered, and dried under reduced pressure at 40°C for 8 hours. Next, the dried resin was dissolved in 250 g of tetrahydrofuran, and 40 g of ion exchange resin (MB-1: manufactured by Organo) was added. The mixture was stirred for 4 hours, and after filtering out the ion exchange resin, the polyimide resin was precipitated in 2 liters of methanol and stirred for 15 minutes. The polyimide resin was filtered to obtain polyimide (A-7), which was dried under reduced pressure at 45°C for 1 day. The weight-average molecular weight of the obtained polyimide A-7 was 16,000.

[0117] <Preparation Example 8> The polymerization reaction was carried out in a 1-liter three-necked jacketed round-bottom flask equipped with a mechanical stirrer, a thermocouple, and a nitrogen inlet to maintain positive nitrogen pressure throughout the reaction. 39.95 g of 4,4'-[1,4-phenylene-bis(1-methylethylidene)]bisaniline (DAPI) and 600 g of anhydrous N-methyl-2-pyrrolidone were added to the round-bottom flask and stirred at 18-20°C until a homogeneous solution was obtained to prepare the diamine solution. Next, 51.75 g of 1-(3',4'-dicarboxyphenyl)-1,3,3-trimethylindan-5,6-dicarboxylic acid dianhydride was added to the diamine solution via a funnel, and then 66.0 g of anhydrous N-methylpyrrolidone was added to the flask in which the polymerization reaction had taken place to rinse. These mixtures were heated to 60°C and stirred for 3 hours. To perform the end-sealing reaction, 4.2 g of exo-3,6-epoxy-1,2,3,6-tetrahydrophthalic anhydride (oxonadic anhydride) and 2.0 g of pyridine were added to a flask containing a mixture. These mixtures were stirred at 60°C for 3 hours. To perform the imidation reaction, 10.2 g of acetic anhydride and 2.0 g of pyridine were added to the flask in which the end-sealing reaction had been performed. These reaction mixtures were heated to 100°C and stirred for 12 hours. 1 g of the sample after the imidation reaction was taken out and precipitated in 10 ml of methanol:water in a mass ratio of 50:50. The solid was isolated by filtration and dried. Fourier transform infrared spectroscopy of the dried solid showed that the imidation reaction was complete. The solution obtained by filtration was cooled to room temperature and added dropwise to 4 liters of vigorously stirred deionized water to precipitate the polymer. The polymer was collected by filtration and washed with 1 liter of deionized water to obtain a filtration cake. The filtration cake was re-slurried with 1 liter of methanol and filtered to obtain a wet filtration cake. The wet filtration cake was dried in air for 12 hours, and then the polymer was dried under vacuum at 70°C for 12 hours to obtain polyimide A-8. The weight-average molecular weight of the obtained polyimide A-8 was 16,000.

[0118] <Example 1> The photosensitive resin composition prepared by the following method was evaluated. (A-1) Polymer A-1: ​​100 g as a polyimide precursor, (B) Ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-1-(O-acetyloxime): B-1: 4 g as a photopolymerization initiator, (C) N-ethyl-2-pyrrolidone: C-1: 420 g as an organic solvent, (D) Benzotriazole: D-1: 0.4 g as a nitrogen-containing heterocyclic compound, and (E) Polyethylene glycol dimethacrylate: E-1: 8 g as a photopolymerizable unsaturated monomer were added and dissolved to prepare a photosensitive resin composition. The composition was evaluated according to the method described above. The results are shown in Table 1. A fan-out type panel-level chip-size package semiconductor device was fabricated using the photosensitive resin composition prepared in Example 1 and operated without problems.

[0119] <Examples 2-19> Photosensitive resin compositions were prepared and evaluated in the same manner as in Example 1, except for the composition shown in Table 1. When fan-out type panel-level chip-size package semiconductor devices were fabricated using the prepared photosensitive resin compositions, all of them operated without problems.

[0120] <Comparative Example 1> A photosensitive resin composition was prepared and evaluated in the same manner as in Example 1, except that the composition was as shown in Table 1. When a fan-out type panel-level chip-size package semiconductor device was fabricated using the prepared photosensitive resin composition, it did not function.

[0121] <Comparative Examples 2-3> Photosensitive resin compositions were prepared and evaluated in the same manner as in Example 1, except for the compositions shown in Table 1. The photosensitive resin compositions of Comparative Examples 2 and 3 exhibited leakage and clogging, making it impossible to fabricate fan-out type panel-level chip-size package semiconductor devices.

[0122]

[0123]

[0124]

[0125] Explanation of the components in Table 1 (In Table 1, the values ​​for each component represent grams (g).) (A-1) Polyimide precursor Polymers A-1 to A-5 produced in the above production examples 1 to 5 (A-2) Polyimide Polymers A-6 to A-8 produced in the above production examples 6 to 8

[0126] (B) Photopolymerization initiators B-1: Ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]-1-(O-acetyloxime) B-2: 3-cyclopentyl-1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]propanone-1-(O-acetyloxime) B-3: 1,2-octanedione, 1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime) B-4: 1,2-propanedione-3-cyclohexyl-1-[4-(phenylthio)phenyl]-2-(O-acetyloxime) B-5: 1,2-propanedione-3-cyclopentyl-1-[4-(phenylthio)phenyl]-2-(O-benzoyloxime) B-6: 1-phenyl-1,2-propanedione-2-(O-ethoxycarbonyl)-oxime

[0127] (C) Organic solvents C-1: N-ethyl-2-pyrrolidone C-2: 1,3-dimethyl-2-imidazolidinone C-3: 3-methoxy-N,N-dimethylpropanamide C-4: γ-butyrolactone C-5: dimethyl sulfoxide C-6: N-methyl-2-pyrrolidone

[0128] (D) Nitrogen-containing heterocyclic compounds D-1: Benzotriazole

[0129] (E) Photopolymerizable unsaturated monomers E-1: Polyethylene glycol dimethacrylate E-2: Tris-(2-acryloxyethyl) isocyanurate

[0130] Sensitizer: N-phenyldiethanolamine (DEA)

Claims

1. A photosensitive resin composition used in a panel-level packaging process, comprising: (A) at least one selected from the group consisting of (A-1) a polyimide precursor and (A-2) a polyimide: 100 parts by mass; (B) a photoinitiator: 0.5 to 20 parts by mass; (C) an organic solvent: 300 to 800 parts by mass, where the (B) photoinitiator contains a compound represented by the following general formula (1): {In formula (1), Ra represents a monovalent organic group having 1 to 10 carbon atoms, Rb represents a monovalent organic group having 1 to 20 carbon atoms, Rc represents a monovalent organic group having 1 to 10 carbon atoms, and Rd represents a monovalent organic group having 1 to 10 carbon atoms.} or a compound represented by general formula (2): {In formula (2), Re represents a monovalent organic group having 1 to 20 carbon atoms, and Rf represents a monovalent organic group having 1 to 10 carbon atoms.}, and having a viscosity measured with an E-type viscometer at 23°C of 0.02 to 1.0 Pa·s, the photosensitive resin composition.

2. The photosensitive resin composition according to claim 1, wherein Rb is an organic group having an aromatic group, and Rc is a methyl group.

3. The photosensitive resin composition according to claim 1, wherein Re is an organic group having an alicyclic structure, and Rf is a methyl group, a phenyl group, or a tolyl group.

4. The photosensitive resin composition according to claim 1 or 2, wherein the (C) organic solvent comprises at least one selected from N-ethyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, tetramethylurea, and dimethyl sulfoxide.

5. The photosensitive resin composition according to claim 1 or 2, wherein the i-line absorbance of an N-methyl-2-pyrrolidone solution at a concentration of 0.1% by mass of at least one selected from (A)(A-1) polyimide precursor and (A-2) polyimide is 0.05 to 1.

3.

6. The photosensitive resin composition according to claim 5, wherein the i-line absorbance is 0.05 to 0.

6.

7. The (A-1) polyimide precursor is the following general formula (3): (In formula (3), X １ Y is a tetravalent organic group having 4 to 40 carbon atoms. １ It is a divalent organic group having 6 to 40 carbon atoms, n １ is an integer between 2 and 150, and R １ and R ２ The photosensitive resin composition according to claim 1 or 2, wherein each of these independently represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms.

8. The aforementioned X １ However, the following general formulas (4) to (6): The photosensitive resin composition according to claim 7, which is at least one selected from the following.

9. The aforementioned Y １ However, the following general formulas (7) to (9): The photosensitive resin composition according to claim 7, which is at least one selected from the following.

10. The photosensitive resin composition according to claim 1 or 2, wherein the (A-2) polyimide does not contain fluorine atoms.

11. (D) The photosensitive resin composition according to claim 1 or 2, further comprising a nitrogen-containing heterocyclic compound.

12. (E) The photosensitive resin composition according to claim 1 or 2, further comprising a photopolymerizable unsaturated monomer.

13. A method for producing a cured film containing polyimide, comprising the step of curing the photosensitive resin composition according to claim 1 or 2 to form a cured film containing polyimide.

14. A method for producing a cured relief pattern, comprising the following steps: (1) applying the photosensitive resin composition according to claim 1 or 2 to a substrate to form a photosensitive resin layer on the substrate; (2) exposing the photosensitive resin layer to light; (3) developing the photosensitive resin layer after exposure to form a relief pattern; and (4) heat-treating the relief pattern to form a cured relief pattern.

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