Substrate processing device, heat transfer member, tray, plasma processing device, substrate processing system, and substrate processing method

Abstract

The present invention provides technology capable of improving the separability of a heat transfer member from a member abutting on the heat transfer member. Provided is a substrate processing device including: a chamber; a substrate support part disposed in the chamber; and a heat transfer member disposed on the substrate support part, wherein the heat transfer member includes an adhesive silicon-containing sheet, and the silicon-containing sheet has an upper surface coated with a carbon-containing film.

Description

Substrate processing apparatus, heat transfer component, tray, plasma processing apparatus, substrate processing system, and substrate processing method

[0001] Exemplary embodiments of this disclosure relate to a substrate processing apparatus, a heat transfer member, a tray, a plasma processing apparatus, a substrate processing system, and a substrate processing method.

[0002] Patent Document 1 discloses technology relating to a heat transfer sheet containing silicon.

[0003] Japanese Patent Publication No. 2012-9563

[0004] This disclosure provides a technology that can improve the separability between a heat transfer member and a member in contact with the heat transfer member.

[0005] In one exemplary embodiment of the present disclosure, a substrate processing apparatus is provided, comprising: a chamber; a substrate support portion disposed within the chamber; and a heat transfer member disposed on the substrate support portion, wherein the heat transfer member comprises an adhesive silicon-containing sheet, the silicon-containing sheet having an upper surface coated with a carbon-containing film.

[0006] According to one exemplary embodiment of the present disclosure, a technology can be provided that can improve the separability between a heat transfer member and a member in contact with the heat transfer member.

[0007] This is a diagram illustrating an example configuration of a plasma processing system. This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. This is a diagram illustrating an example configuration of a heat transfer member. This is a diagram illustrating another example configuration of a heat transfer member. This is a diagram illustrating another example configuration of a heat transfer member. This is a diagram illustrating an example application of a heat transfer member. This is a diagram illustrating another example application of a heat transfer member. This is a diagram illustrating another example application of a heat transfer member. This is a diagram illustrating another example application of a heat transfer member. This is a diagram illustrating an example where the heat transfer member and ring are separated from the substrate support. This is a diagram illustrating another example configuration of a plasma processing system. This is a diagram illustrating another example configuration of a plasma processing system. This is a diagram illustrating another example application of a heat transfer member. This is a flowchart illustrating method MT1. This is a schematic diagram illustrating each step of method MT1. This is a diagram illustrating another example configuration of a heat transfer member. This is a flowchart illustrating method MT2. This is a schematic diagram illustrating each step of method MT2. This is a diagram illustrating an example of step ST4a. This is a diagram illustrating an example of step ST5a. This figure shows the measurement results for tack force. This figure shows the measurement results for thermal resistance.

[0008] Hereinafter, each embodiment of this disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numeral, and redundant explanations are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and actual ratios are not limited to those shown.

[0009] <Example of Plasma Processing System Configuration> Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0012] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a support base 1110 and an electrostatic chuck 1111. The support base 1110 includes a conductive member. The conductive member of the support base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the support base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the support base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the support base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0017] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the support base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0020] The power supply system 30 includes a power supply 31 that is electrically connected or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is generated from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the power supply 31 may function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0021] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode, and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as a voltage pulse generation unit configured to generate a sequence of voltage pulses. Accordingly, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, and each cycle includes a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, the burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have a rectangular, trapezoidal, triangular or any waveform combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Note that the first and second voltage generation units 32a and 32b may be provided in addition to the power supply 31, or the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 can be connected to, for example, the gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump or a combination thereof.

[0026] <Configuration Example of Heat Transfer Member>FIG. 3 is a diagram for explaining an example of a heat transfer member. The heat transfer member H includes a silicon-containing sheet S1. The silicon-containing sheet S1 may be, for example, substantially disk-shaped. The upper surface S1a of the silicon-containing sheet S1 is coated with a carbon-containing film C1. In one embodiment, the heat transfer member H is sheet-shaped. That is, the heat transfer member H may be a heat transfer sheet.

[0027] In one embodiment, the silicon-containing sheet S1 may be composed of an adhesive material. The silicon-containing sheet S1 may be composed of, for example, a silicon-containing material, a silicon carbide-containing material, or a nano-silicon carbide-containing material. The silicon-containing sheet S1 may also contain a tungsten-containing material, an aluminum oxide-containing material, an aluminum nitride-containing material, a diamond powder-containing material, a carbon nanotube-containing material, a fluororubber, or an acrylic resin. In one embodiment, the silicon-containing sheet S1 may be a mesh sheet impregnated with a liquid heat transfer material such as silicon oil. In one embodiment, the silicon-containing sheet S1 may be composed of a material having high thermal conductivity and plasma resistance. In one embodiment, the silicon-containing sheet S1 may be composed of a synthetic polymer compound having a main skeleton of siloxane bonds. The silicon-containing sheet S1 may be a silicone sheet. Silicone has a siloxane bond (≡Si-O-Si≡) consisting of silicon and oxygen as its skeleton, and a methyl group (-CH₂) is attached to the silicon (Si). ３ It is a polymer in which organic groups, mainly composed of ), are bonded together.

[0028] In one embodiment, the silicone-containing sheet S1 does not need to be adhesive.

[0029] In one embodiment, the silicon-containing sheet S1 has a thickness of 1000 μm or less, 800 μm or less, or 500 μm or less. In one embodiment, the silicon-containing sheet S1 has a thickness of 10 μm or more, or 50 μm or more. In one embodiment, the silicon-containing sheet S1 has a thickness of 50 μm or more, or 50 μm or more. When the silicon-containing sheet S1 has a thickness of 50 μm or more, its handling properties can be further improved. When the silicon-containing sheet S1 has a thickness of 500 μm or less, its thermal resistance can be further reduced.

[0030] In one embodiment, the silicone-containing sheet S1 may contain a filler. The filler is alumina (Al ２ O ３ ), or may consist of boron nitride (BN).

[0031] In one embodiment, the filler has an average particle size of 10 μm or more and 300 μm or less.

[0032] The carbon-containing film C1 is a film containing carbon as a component. The carbon-containing film C1 may contain carbon components having carbon-carbon (C-C) bonds with lower bond energy than siloxane bonds. The carbon-containing film C1 may also contain carbon components composed of layered structures such as graphite or amorphous carbon with weak intermolecular forces. The carbon-containing film C1 may be a film containing, for example, graphite, amorphous carbon, or a mixture thereof. In one embodiment, the carbon-containing film C1 may further contain hydrogen as a component. In one embodiment, the carbon-containing film C1 may contain carbon components and hydrogen components that form carbon-hydrogen (C-H) bonds. The carbon-containing film C1 may be coated on the upper surface of the silicon-containing sheet S1a by, for example, physical vapor deposition (PVD), chemical vapor deposition (CVD), etc. In one embodiment, the carbon-containing film C1 may be a carbon-containing CVD film.

[0033] In one embodiment, the carbon-containing film C1 may be a film containing diamond-like carbon (DLC) or carbon nanotubes (CNT). In one embodiment, the carbon nanotubes may be arranged in an orientation relative to the surface of the sheet.

[0034] In one embodiment, the carbon-containing film C1 may be coated on the upper surface of the silicon-containing sheet S1 by printing (transfer). The carbon-containing film C1 may be coated, for example, by a hot press method. Coating by the hot press method may be carried out, for example, as follows: First, a silicon chip is prepared and a carbon-containing film is formed on the silicon chip. The carbon-containing film may be formed on the silicon chip by a CVD method. Then, the silicon chip is placed on the silicon-containing sheet S1 so that the carbon-containing film is in contact with the silicon-containing sheet S1. Next, the silicon chip is heated and pressurized to transfer the carbon-containing film onto the silicon-containing sheet S1. Coating of the carbon-containing film by printing (transfer), such as by a hot press method, may be carried out outside the chamber 10.

[0035] In one embodiment, the carbon-containing film C1 may contain oxygen and / or silicon in addition to carbon. In one embodiment, the proportion of carbon atoms in the carbon-containing film C1 may be 50% or more, 60% or more, or 70% or more, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of carbon atoms may be 95% or less, 90% or less, or 80% or less, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of carbon atoms in the carbon-containing film C1 may be 50% or more and 95% or less, 60% or more and 90% or less, or 70% or more and 80% or less.

[0036] In one embodiment, the proportion of oxygen atoms in the carbon-containing film C1 may be 5% or more, 10% or more, or 15% or more, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of oxygen atoms in the carbon-containing film C1 may be 30% or less, 25% or less, or 20% or less, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of oxygen atoms in the carbon-containing film C1 may be 5% or more and 30% or less, 10% or more and 25% or less, or 15% or more and 20% or less.

[0037] In one embodiment, the proportion of silicon atoms in the carbon-containing film C1 may be 1% or more, 3% or more, or 5% or more, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of silicon atoms in the carbon-containing film C1 may be 15% or less, 10% or less, or 7% or less, relative to the total number of atoms in the carbon-containing film C1. In one embodiment, the proportion of silicon atoms in the carbon-containing film C1 may be 1% or more and 15% or less, 3% or more and 10% or less, or 5% or more and 7% or less.

[0038] In one embodiment, the carbon-containing film C1 may contain sp3 carbon and sp2 carbon. In this disclosure, "sp3 carbon" refers to a carbon atom with an sp3 hybrid orbital. In this disclosure, "sp2 carbon" refers to a carbon atom with an sp2 hybrid orbital. The sp3 carbon and sp2 carbon can be observed by XPS (X-ray photoelectron spectroscopy) measurement, and the ratio of their atomic numbers can also be measured.

[0039] In one embodiment, the ratio of sp3 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 40% or more, 50% or more, or 60% or more. In one embodiment, the ratio of sp3 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 90% or less, 80% or less, or 70% or less. By having a proportion of sp3 carbon of 40% or more, insulation performance may be improved. In one embodiment, the ratio of sp3 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 40% or more and 90% or less. In one embodiment, the proportion of sp3 carbon in the carbon contained in the carbon-containing film C1 is greater than the proportion of sp2 carbon.

[0040] In one embodiment, the ratio of sp2 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 10% or more, 20% or more, or 30% or more. In one embodiment, the ratio of sp2 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 60% or less, 50% or less, or 40% or less. By having a sp2 carbon ratio of 10% or more, separation of the silicon-containing sheet S1 from other members in contact with the carbon-containing film C1 may be facilitated. In one embodiment, the ratio of sp2 carbon atoms to the total number of carbon atoms in the carbon-containing film C1 may be 10% or more and 60% or less.

[0041] In one embodiment, the carbon-containing film C1 has a thickness of 10 nm or more, 30 nm or more, or 50 nm or more. In another embodiment, the carbon-containing film C1 has a thickness of 200 nm or less, or 100 nm or less.

[0042] In one embodiment, the carbon-containing film C1 has a thickness of 10 nm to 10 μm. In this case, the thermal resistance of the carbon-containing film C1 may be lower than that of the silicon-containing sheet S1.

[0043] In one embodiment, the carbon-containing film C1 has a thickness of 10 μm to 300 μm. In this case, the removal of a portion of the carbon-containing film C1 by plasma or the like, which exposes the silicon-containing sheet S1, can be further suppressed.

[0044] Figure 4 shows another example of the configuration of the heat transfer member H. As shown in Figure 4, the heat transfer member H may have carbon-containing films coated on both sides of a silicon-containing sheet S1. That is, the upper surface S1a of the silicon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. The configurations (structure, material, thickness, etc.) of the first carbon-containing film C1 and the second carbon-containing film C2 may be the same as the configuration of the carbon-containing film C1 shown in Figure 3. The configurations of the first carbon-containing film C1 and the second carbon-containing film C2 may be identical or different.

[0045] Figure 5 shows another example of the configuration of the heat transfer member H. As shown in Figure 5, the heat transfer member H may have carbon-containing films coated on both sides and sides of the silicon-containing sheet S1. Specifically, the upper surface S1a of the silicon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. One side surface S1c of the silicon-containing sheet S1 is coated with a third carbon-containing film C3. The other side surface S1d of the silicon-containing sheet S1 is coated with a fourth carbon-containing film C4. The configuration (structure, material, thickness, etc.) of the third carbon-containing film C3 and the fourth carbon-containing film C4 may be the same as the configuration of the carbon-containing film C1 shown in Figure 3. The configurations of the first carbon-containing film C1, the second carbon-containing film C2, the third carbon-containing film C3, and the fourth carbon-containing film C4 may be the same as or different from each other.

[0046] In one embodiment, the thermal resistance value of the heat transfer member H is 5.0 × 10―５ m ２ K / W or more, 1.0×10 ―４ m ２ K / W or more, 1.5×10 ―４ m ２ K / W or more, or 2.0×10 ―４ m ２ K / W or more may be. In one embodiment, the thermal resistance value of the heat transfer member H is 1.0×10 ―３ m ２ K / W or less, 5.0×10 ―４ m ２ K / W or less, 3.0×10 ―４ m ２ K / W or less, or 2.5×10 ―４ m ２ K / W or less may be. In one embodiment, the thermal resistance value of the heat transfer member H is 5.0×10 ―５ m ２ K / W or more and 1.0×10 ―３ m ２ K / W or less, 1.0×10 ―４ m ２ K / W or more and 5.0×10 ―４ m ２ K / W or less, 1.5×10 ―４ m ２ K / W or more and 3.0×10 ―４ m ２ K / W or less, or 2.0×10 ―４ m ２ K / W or more and 2.5×10 ―４ m ２ K / W or less may be.

[0047] In one embodiment, a release sheet may be provided on the surface of the heat transfer member H. The release sheet may be formed by coating a release agent on a base material (film). The release sheet may also be referred to as a release film. In one embodiment, the release sheet may be provided on the surface of the carbon-containing films C1 to C4 of the silicon-containing sheet S1. In one embodiment, the release sheet may be provided on the surface of the silicon-containing sheet S1 where no carbon-containing film is provided. The release sheet can protect the surface of the carbon-containing film and the silicon-containing sheet during the conveyance of the heat transfer member H. The release sheet may be removed (peeled off) from the heat transfer member H during the use of the heat transfer member H.

[0048] <Examples of Application of Heat Transfer Members> In one embodiment, the heat transfer member H is used in a substrate processing apparatus. For example, the silicon-containing sheet S1 may be placed on the substrate support portion of the substrate processing apparatus. In this case, the upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the substrate. The silicon-containing sheet S1 may also function as a heat transfer member for heat exchange between the substrate support portion and the substrate. For example, the silicon-containing sheet S1 may be placed between a consumable part used in the substrate processing apparatus (e.g., a ring assembly or shower head) and the support member of the consumable part. In this case, the upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the consumable part. The silicon-containing sheet S1 may also function as a heat transfer member for heat exchange between the consumable part and the support member of the consumable part.

[0049] Figure 6 is a diagram illustrating an example of the application of the heat transfer member H. Figure 6 shows an example in which the heat transfer member H is placed on the substrate support portion 11 of the plasma processing apparatus 1 (see Figure 2). The heat transfer member H may be provided on the substrate support surface 111a of the substrate support portion 11. The substrate W may be provided on the heat transfer member H. That is, the heat transfer member H may be provided between the substrate support portion 11 and the substrate W. The shape of the heat transfer member H in plan view may be circular, similar to the substrate W.

[0050] As shown in Figure 6, the lower surface S1b of the silicon-containing sheet S1 abuts against the upper surface of the substrate support surface 111a of the substrate support portion 11. The adhesive silicon-containing sheet S1 adheres closely to the substrate support portion 11, thereby promoting heat exchange between the two. The carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 abuts against the lower surface of the substrate W. The substrate W is thermally connected to the substrate support portion 11 via the heat transfer member H.

[0051] During plasma treatment of the substrate W, the temperature of the heat transfer member H may rise via the substrate W due to heat input from the plasma in the chamber 10. In this case, if a carbon-containing film C1 is not present at the interface between the substrate W and the silicon-containing sheet S1, siloxane bonds may form at the interface between the substrate W and the silicon-containing sheet S1, causing them to become strongly bonded. In such a case, a large force is required to separate the substrate W from the heat transfer member H when transporting the substrate W after plasma treatment. Furthermore, the substrate W and the heat transfer member H may be damaged during separation. In contrast, in this embodiment, a carbon-containing film C1 is present at the interface between the silicon-containing sheet S1 and the substrate W. This suppresses the formation of siloxane bonds between the substrate W and the silicon-containing sheet S1. The bonding force between the substrate W and the carbon-containing film C1, and the bonding force of the carbon-carbon bonds within the carbon-containing film C1, tend to be smaller than that of siloxane bonds. Therefore, the substrate W can be separated from the heat transfer member H with relatively little force. In one embodiment, the separation of the substrate W and the heat transfer member H includes the peeling off of a portion (e.g., the upper part) of the carbon-containing film C1 bonded to the substrate W from the other portion (e.g., the lower part) of the carbon-containing film C1 bonded to the heat transfer member H.

[0052] In one embodiment, the substrate W and the heat transfer member H may be pressed against the substrate support surface 111a and fixed to the substrate support surface 111a by the electrostatic attraction force generated when a DC voltage is applied to the electrode 1111b. The pressing force at this time is, for example, 1 MPa or less, 0.5 MPa or less, 0.2 MPa or less, or 0.1 MPa or less. The pressing force is, for example, 0.01 MPa or more, 0.05 MPa or more, 0.07 MPa or more, or 0.1 MPa or more. If the pressing force is 0.01 MPa or more, the heat transfer member H may be pressed more closely against the substrate support surface 111a, and the thickness of the heat transfer member H may be reduced, thereby improving thermal conductivity. If the pressing force is 1 MPa or less, the substrate W may be easier to remove. In one embodiment, the pressing force when pressing the substrate W and the heat transfer member H against the substrate support surface 111a is, for example, 0.01 MPa or more and 1 MPa or less.

[0053] Figures 7A and 7B illustrate other application examples of the heat transfer member H. Figures 7A and 7B show an example in which the heat transfer member H is positioned between the ring support surface 111b of the plasma processing apparatus 1 (see Figure 2) and the ring assembly 112 (hereinafter sometimes referred to as "ring 112").

[0054] In one embodiment, as shown in Figure 7A, the heat transfer member H and the ring 112 may be in contact via a carbon-containing film C1. In this case, the ring 112 and the heat transfer member H can be separated with relatively little force. The ring 112 separated from the heat transfer member H may be transported outside the chamber 10 by a transport device. An example of a transport device will be described later with reference to Figures 7G and 7F. The replacement ring 112 may be stored outside the chamber 10 by a transport device. The replacement ring 112 may be transported inside the chamber 10 by a transport device and placed on the heat transfer member H.

[0055] In one embodiment, as shown in Figure 7B, the heat transfer member H and the ring support surface 111b may be in contact via a carbon-containing film C1. In this case, the heat transfer member H and the ring support surface 111b can be separated with relatively little force. That is, in the example shown in Figure 7B, the heat transfer member H and the ring 112 can be separated from the ring support surface 111b as a single unit. The heat transfer member H and the ring 112 separated from the ring support surface 111b may be transported as a single unit to the outside of the chamber 10 by a transport device.

[0056] The replacement heat transfer member H and ring 112 may be stored together outside the chamber 10. The replacement heat transfer member H and ring 112 may be transported together into the chamber 10 by a transport device and placed on the ring support surface 111b. The replacement heat transfer member H may be provided with the above-mentioned release sheet during storage and transport. The release sheet can provide protection for the heat transfer member H from the silicon-containing sheet S1 and the carbon-containing film.

[0057] The shape of the heat transfer member H in plan view may be annular, similar to the ring 112. The heat transfer member H may be positioned so that its center coincides with that of the electrostatic chuck 1111 in plan view. The ring 112 is an example of a consumable part in this disclosure. The ring 112 may be, for example, one or more edge rings. The edge rings are made of a conductive or insulating material. The ring 112 may be, for example, one or more covering rings. The covering rings are positioned radially outward from the edge rings. The covering rings are made of an insulating material. The ring 112 may consist of, for example, both an edge ring and a covering ring (see Figure 7E).

[0058] In one embodiment, as shown in Figures 7A and 7B, the electrostatic chuck 1111 may include an electrostatic chuck electrode 1111c. The electrostatic chuck electrode 1111c is positioned below the ring support surface 111b and within the ceramic member 1111a. The electrode 1111c is configured to attract and hold the ring 112. The electrostatic chuck electrode 1111c may be electrically connected to or coupled to a chuck power supply. In one embodiment, the electrostatic chuck electrode 1111c may be configured integrally with the electrostatic chuck electrode 1111b. In one embodiment, the electrostatic chuck 1111 does not need to include the electrostatic chuck electrode 1111c.

[0059] In one embodiment, the ring 112 may be made of a material such as Si, quartz, or SiC.

[0060] In the examples shown in Figures 7A and 7B, the ring 112 and the heat transfer member H may be pressed against the ring support surface 111b by electrostatic attraction force when a voltage is applied to the electrode 1111c, and fixed to the ring support surface 111b. By using the heat transfer member H, sufficient heat exchange can be achieved between the ring 112 and the ring support surface 11b. In one embodiment, it is not necessary to supply a heat transfer medium such as He between the ring support surface 111b and the ring 112. In this case, the risk of abnormal discharge occurring in supply holes for the heat transfer medium such as He can be reduced.

[0061] The method for fixing the ring 112 and the heat transfer member H is not limited to the method described above. Figure 7C shows another example in which the heat transfer member H is positioned between the ring support surface 111b of the plasma processing apparatus 1 (see Figure 2) and the ring 112. As shown in Figure 7C, the pressing member 200 may be placed above the ring 112. The ring 112 and the heat transfer member H may be pressed against the ring support surface 111b by the weight of the pressing member 200 or by the pressing member 200 being pressed from above. This fixes the ring 112 and the heat transfer member H to the ring support surface 111b. The pressing member 200 may then be removed. In the example of Figure 7C, the electrostatic chuck 1111 does not need to be equipped with an electrostatic chuck electrode 1111c (see Figures 7A and 7B).

[0062] Figure 7D shows another example in which the heat transfer member H is positioned between the ring support surface 111b of the plasma processing apparatus 1 (see Figure 2) and the ring 112. In Figure 7D, the support base 1110 is extended radially outward compared to Figure 7C. In Figure 7D, the fixing member (ring clamp) 210 is placed above the ring support surface 111b. The fixing member 210 has a substantially L-shaped cross-section and comprises a vertical piece 211 and a horizontal piece 212. The vertical piece 211 abuts against the support base 1110 and is fixed to the support base 1110 by, for example, a fastening member 220. The horizontal piece 212 is in contact with the upper surface of the ring 112. That is, the fixing member 210 is positioned to sandwich the ring 112 between the horizontal piece 212 and the ring support surface 111b. By tightening the fastening member 220, the fixing member 210 presses the ring 112 and the heat transfer member H against the ring support surface 111b. This fixes the ring 112 and the heat transfer member H to the ring support surface 111b. In the example shown in Figure 7D, the electrostatic chuck 1111 does not need to be equipped with an electrostatic chuck electrode 1111c (see Figures 7A and 7B).

[0063] In Figures 7A to 7D, the pressing force when pressing the ring 112 and the heat transfer member H against the ring support surface 111b is, for example, 1 MPa or less, 0.5 MPa or less, 0.2 MPa or less, or 0.1 MPa or less. The pressing force is, for example, 0.01 MPa or more, 0.05 MPa or more, 0.07 MPa or more, or 0.1 MPa or more. When the pressing force is 0.01 MPa or more, the heat transfer member H can be made to adhere more closely to the ring support surface 111b, and its thickness can be reduced, which can improve the thermal conductivity. When the pressing force is 1 MPa or less, the ring 112 can be removed more easily. In one embodiment, the pressing force when pressing the ring 112 and the heat transfer member H against the ring support surface 111b is, for example, 0.01 MPa or more and 1 MPa or less.

[0064] Figure 7E is a diagram illustrating an example of lifter operation. In the example shown in Figure 7E, the substrate support portion 11 is provided with an insulator 115 on the radially outer side of the base 1110. The ring 112 is composed of both an edge ring 1120 and a cover ring 1122. The edge ring 1120 is made of a conductive or insulating material. The cover ring 1122 is positioned radially outside the edge ring 1120. The cover ring 1122 is made of an insulating material. In one embodiment, the substrate support portion 11 may include a lifter L that can move the edge ring 1120 up and down. In one embodiment, as shown in Figure 7E, the lifter L may include a pin 701 provided in a hole that penetrates the cover ring 1122 and the insulator 15 in the thickness direction (vertical direction) and configured to move up and down, and an actuator 702. The pin 701 may be made of, for example, alumina (Al ２ O ３ ), quartz (SiO ２), formed from SUS (stainless steel), etc. The actuator 702 raises and lowers the pin 701. The actuator 702 may be, for example, a motor such as a DC motor, a stepping motor, or a linear motor, an air-driven mechanism such as an air cylinder, or a piezo actuator. The substrate support section 11 may be equipped with a plurality of lifters L. The plurality of lifters L may be arranged below the ring support surface 111b at equal intervals from each other in the circumferential direction. As shown in Figure 7E, when the pin 701 moves upward from the state in which the pin 701 is housed in the substrate support section 11 ((a)) by the actuator 702 ((b)), the edge ring 1120 rises and is separated from the ring surface 111b. After that, the edge ring 1120 may be unloaded, for example, by a transport robot in a vacuum transport chamber connected to the chamber 10. Furthermore, a new edge ring 1120 may be loaded into the chamber 10 by a transport robot in a vacuum transport chamber.

[0065] In one embodiment, the replacement ring 112 and heat transfer member H may be automatically transported by a transport device, or they may be transported manually by an operator. The transport device may be, for example, a transport arm or a transport robot. Figure 7F shows another example of the configuration of the plasma processing system. As shown in Figure 7F, the plasma processing system 500 includes a vacuum processing unit 502 formed by connecting a plurality (in this case, six) of plasma processing devices 101A to 101F around a vacuum transport chamber 510 via gate valves 108A to 108F, and a transport unit 504 for transporting substrates W to and from the vacuum processing unit 502. The vacuum transport chamber 510 is configured to control the internal vacuum pressure, and a transport robot 190 is provided inside the vacuum transport chamber 510. This allows the substrates W and ring 112 to be transported between each plasma processing device 101A to 101F while maintaining a reduced pressure atmosphere.

[0066] The transport robot 190 has two picks 192A and 192B, and is capable of handling two substrates W or rings 112 at once. The transport robot 190 is rotatably supported on a base 194. The base 194 is configured to slide freely on a guide rail 196, which is arranged from the base end to the tip end inside the vacuum transport chamber 510, by means of a slide drive motor (not shown). A flexible arm 198 is connected to the base 194 for passing wiring, such as for a motor for rotating the arm.

[0067] Next, an example of the configuration of the transport unit 504 will be described. The transport unit 504 is composed of a box-shaped transport chamber 530. The inside of the transport chamber 530 is under atmospheric pressure, and N ２ An inert gas such as gas or clean air is circulated. Multiple cassette stands 532A to 532D are arranged side by side in the transport chamber 530. Cassette containers 534A to 534C for storing substrates W are set on these cassette stands 532A to 532C. Three load ports 536A to 536C, which serve as input openings for substrates W, are provided on the side wall of the transport chamber 530, corresponding to each cassette stand 532A to 532C.

[0068] Figure 7F shows an example where, for example, one cassette container 534A to 534C can be placed on each of the cassette stands 532A to 532C. However, the number of cassette stands and cassette containers is not limited to this; for example, there may be one or two, or four or more.

[0069] In one embodiment, a cassette container 534D for storing the ring 112 is set on the cassette tray 532D. A load port 536D is provided as an opening for inserting the ring 112, corresponding to each cassette tray 532D. The ring 112 is stored in the cassette container 534D.

[0070] Inside the transport chamber 530, a transport arm 560 is provided for transporting the substrate W or ring 112 into and out of each of the cassette containers 534A to 534D, an orienter 537 for positioning the substrate W, and the first and second load lock chambers 520M and 520N. The transport arm 560 is fixed on a base 562, which is configured to slide along a guide rail 564 provided along the longitudinal direction inside the transport chamber 530, for example, by a linear motor drive mechanism. The transport arm 560 may be a double-arm mechanism with two picks 566A and 566B as shown in Figure 7F, or a single-arm mechanism with one pick.

[0071] In one embodiment, the ring 112 is housed in a cassette container 534D and loaded into the transport chamber 530 via a load port 536D. The ring 112 is then transported into the load lock chamber 520N by a transport arm 560 within the transport chamber 530. Once the load lock chamber 520N is adjusted to a reduced pressure atmosphere, the ring 112 is unloaded by the other transport robot 190 and transported into the vacuum transport chamber 510. The ring 112 is then transported into the processing chamber 102 of the plasma processing apparatus and placed on the ring support surface of the substrate support. After processing the substrate W, the ring 112 may be unloaded by the transport robot 190. The ring 112 may be transported into and unloaded from the processing chamber 102 of the plasma processing apparatus as an integral part with the heat transfer member H. The heat transfer member H may include the release sheet described above. The release sheet may be peeled off from the heat transfer member H by an operator or a transport arm (560, 190) before or during delivery.

[0072] Figure 7G shows another example of the plasma processing system configuration. As shown in Figure 7G, the processing system PS includes vacuum transport modules TM1, TM2, process modules PM1 to PM12, load lock modules LL1, LL2, atmospheric transport module LM, storage module SM, control unit CU, etc.

[0073] In Figure 7G, the vacuum transport modules TM1 and TM2 each have a roughly rectangular shape in plan view. The vacuum transport modules TM1 and TM2 have a vacuum transport chamber, and transport robots TR1 and TR2 are arranged inside, respectively. Transport robots TR1 and TR2 are configured to be able to rotate, extend and retract, and move up and down. Transport robot TR1 uses an upper fork (first fork) FK11 and a lower fork (second fork) FK12 located at its tip to hold and transport the substrate and consumable parts such as a ring 112 integrated with the heat transfer member H. Process modules PM1 to PM12 have a processing chamber (plasma processing chamber) and a stage (mounting platform) arranged inside. Process modules PM1 to PM12 may, for example, after a substrate is placed on the stage, reduce the pressure inside to introduce a processing gas, apply RF power to generate plasma, and perform plasma processing on the substrate with the plasma.

[0074] Load lock modules LL1 and LL2 are positioned between the vacuum transport module TM1 and the atmospheric transport module LM. Load lock modules LL1 and LL2 have a variable internal pressure chamber that can be switched between vacuum and atmospheric pressure. Load lock modules LL1 and LL2 have a stage located inside. When transporting a substrate from the atmospheric transport module LM to the vacuum transport module TM1, load lock modules LL1 and LL2 receive the substrate from the atmospheric transport module LM while maintaining atmospheric pressure inside, and then reduce the internal pressure to transport the substrate to the vacuum transport module TM1. When transporting a substrate from the vacuum transport module TM1 to the atmospheric transport module LM, load lock modules LL1 and LL2 receive the substrate from the vacuum transport module TM1 while maintaining vacuum inside, and then increase the internal pressure to atmospheric pressure to transport the substrate to the atmospheric transport module LM.

[0075] The storage module SM is detachably connected to the vacuum transport module TM2. The storage module SM has a storage chamber and stores consumable parts such as rings 112. The storage module SM is connected to the vacuum transport module TM2, for example, when replacing consumable parts in process modules PM1 to PM12, and is removed from the vacuum transport module TM2 after the replacement of the consumable parts is completed. The storage module SM may always be connected to the vacuum transport module TM2. The storage module SM may have a position detection sensor that detects the position of the consumable parts stored in the storage chamber. The consumable parts are transported between process modules PM1 to PM12 and the storage module SM by transport robots TR1 and TR2.

[0076] In one embodiment, the transport robot TR1 holds the ring 112 with its upper fork FK11 and lower fork FK12 and transports it between load lock modules LL1, LL2, process modules PM1 to PM6 and a path (not shown). The transport robot TR2 holds the ring 112 with its upper fork FK21 and lower fork FK22 located at its tip and transports it. The ring 112, which is integrated with the heat transfer member H, may be transported into the process module PM and placed on the ring support surface of the substrate support. The ring 112 may be brought in and brought out together with the heat transfer member H. The heat transfer member H may be equipped with the release sheet described above. The release sheet may be peeled off from the heat transfer member H by an operator or the transport robot TR1 or TR2 before or during transport.

[0077] Figure 8A is a diagram illustrating another application example of the heat transfer member H. Figure 8A shows an example in which the heat transfer member is placed between the cooling plate 61 and the shower plate 60 of the plasma processing apparatus 1 (see Figure 2). As shown in Figure 8A, a flow path 70 is formed in the cooling plate 61. The flow path 70 is supplied with heat transfer fluid via a pipe 71 and discharged via the pipe 71. The shower plate 60 and the cooling plate 61 may be attached to the chamber 10 via a member 51. The heat transfer member H may have a plurality of holes of the same diameter as the gas inlet 13c.

[0078] In one embodiment, the shower plate 60 and the cooling plate 61 may constitute the upper electrode assembly 50. That is, the upper electrode assembly 50 may include a first plate (shower plate 60) having a gas inlet for introducing gas into the chamber, and a second plate (cooling plate 61) configured for the flow of a heat transfer fluid. In one embodiment, the cooling plate 61 may contain aluminum. In one embodiment, the shower plate 60 may contain aluminum.

[0079] As shown in Figure 8A, member 51 may be configured to support the vicinity of the outer edge of the shower plate 61 from below. Member 51 may be positioned to sandwich the shower plate 60 between it and the cooling plate 61. By pressing member 51 upward, the shower plate 60 and the heat transfer member H are pressed against the cooling plate 61. This fixes the heat transfer member H to the cooling plate 61. Member 51 may be fixed to the cooling plate by means of, for example, screws (not shown).

[0080] In Figure 8A, the pressing force when pressing the shower plate 60 and the heat transfer member H against the cooling plate 61 is, for example, 1 MPa or less, 0.5 MPa or less, 0.2 MPa or less, or 0.1 MPa or less. The pressing force is, for example, 0.01 MPa or more, 0.05 MPa or more, 0.07 MPa or more, or 0.1 MPa or more. When the pressing force is 0.01 MPa or more, the heat transfer member H can be made more closely attached to the cooling plate 61, and its thickness can be reduced, which can improve the thermal conductivity. When the pressing force is 1 MPa or less, it can be made easier to remove the cooling plate 61. In one embodiment, the pressing force when pressing the shower plate 60 and the heat transfer member H against the cooling plate 61 is, for example, 0.01 MPa or more and 1 MPa or less.

[0081] Figure 8B is a diagram illustrating another application example of the heat transfer member H. Figure 8B shows an example of applying the heat transfer member H to a plasma treatment apparatus 2. The plasma treatment apparatus 2 comprises an inner chamber 400, an outer chamber 300, a lift mechanism (lifter) 12, and an upper electrode 310. The outer chamber 300 may include a gate 300g through which the inner chamber 400 can be moved in and out. The lift mechanism 12 is connected to the upper surface inside the outer chamber 300 and is located inside the outer chamber 300. The upper electrode 310 is connected to the lift mechanism 12. The upper surface of the inner chamber 400 is connected to the upper electrode 310. When the lift mechanism 12 moves up and down, the upper electrode 310 and the inner chamber 400 can be moved up and down. As shown in Figure 8B, the heat transfer member H may be located between the inner chamber 400 and the upper electrode 310. In one embodiment, the upper electrode 310 and the heat transfer member H can be separated with a relatively small force.

[0082] <Example of Substrate Processing Method> Next, a substrate processing method according to an exemplary embodiment of the present disclosure (hereinafter also referred to as "Method MT1") will be described. The processing in each step may be carried out using the plasma processing apparatus shown in Figures 1 and 2. In the following description, the case in which the control unit 2 controls each part of the capacitively coupled plasma processing apparatus 1 (see Figure 2) to carry out Method MT1 will be described as an example.

[0083] Figure 9 is a flowchart of an example of Method MT1. Figure 10 is a schematic diagram illustrating each step of Method MT1. As shown in Figure 9, Method MT1 includes steps ST1 of providing a silicon-containing sheet, ST2 of forming a carbon-containing film, and ST3 of providing a substrate. In one embodiment, Method MT1 may further include steps ST4 of plasma treatment and ST5 of unloading the substrate. Hereinafter, Method MT1 will be described in detail with reference to Figures 9 and 10.

[0084] In step ST1, a silicon-containing sheet S1 is provided. The silicon-containing sheet S1 is provided onto the substrate support surface 111a in the chamber 10, either using a transport device or manually (see Figures 10(a) to 10(b)). The adhesive silicon-containing sheet adheres closely to the substrate support surface 111a.

[0085] In step ST2, a carbon-containing film C1 is formed on the upper surface of the silicon-containing sheet S1. Specifically, for example, a carbon-containing gas is supplied to the plasma processing space 10s. A source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode. At this time, a bias signal may be supplied to the lower electrode. Plasma is generated from the carbon-containing gas, and the carbon in the plasma is deposited on the surface of the silicon-containing sheet S1, forming a carbon-containing film C1 on the upper surface (see Figure 10(c)). As a result, a heat transfer member H is formed on the substrate support portion 11.

[0086] In step ST3, the substrate W is provided to the chamber 10. The substrate W is carried into the chamber 10 by a transport arm and placed on the upper surface of the heat transfer member H (see Figures 10(d) to (e)). At this time, the carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 comes into contact with the lower surface of the substrate W. The substrate W is thermally connected to the substrate support 11 via the heat transfer member H.

[0087] In step ST4, plasma processing is performed. Plasma processing includes, for example, etching. Processing gas is supplied to the plasma processing space 10s via the showerhead 13 by the gas supply unit 20. The processing gas supplied at this time includes a gas that generates active species necessary for, for example, etching the substrate W. A source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode. A bias signal may be supplied to the lower electrode at this time. Plasma is generated from the processing gas, and plasma processing (e.g., etching) is performed on the substrate W. In step ST4, the substrate W receives heat from the plasma, and the temperature of the heat transfer member H may rise via the substrate W. A carbon-containing film C1 exists at the interface between the silicon-containing sheet S1 and the substrate W. This can suppress the formation of siloxane bonds between the substrate W and the silicon-containing sheet S1, preventing them from bonding strongly.

[0088] In step ST5, the substrate W is unloaded. By lifting the substrate W, the substrate W and the heat transfer member H are separated (see Figure 10(f)). As described above, separation can be easily performed by peeling off the carbon-containing film C1 present at the interface between the silicon-containing sheet S1 and the substrate W. The substrate W is transported to the outside of the chamber 10 by the transport arm (see Figure 10(g)). This completes method MT1.

[0089] In one embodiment, instead of providing the silicon-containing sheet S1 in step ST1, a heat transfer member H (silicon-containing sheet S1 coated with a carbon-containing film C1) may be provided. In this case, step ST2 may be omitted.

[0090] In one embodiment, the heat transfer member H may be removed from the chamber 10 after the completion of step ST5. In this case, method MT1 may be performed on a new substrate W starting from step ST1. In one embodiment, the heat transfer member H may not be removed from the chamber 10 after the completion of method MT1. Then, method MT1 may be performed on another substrate W starting from step ST3 (providing the substrate) or starting from step ST2 (forming the carbon-containing film). That is, the heat transfer member H may be used continuously for plasma treatment of one or more other substrates W.

[0091] In one embodiment, the plasma treatment in step ST4 may be performed with a carbon-containing film present between the silicon-containing sheet S1 and the substrate support surface 111a. This prevents the silicon-containing sheet S1 from deforming due to heat input from the plasma via the substrate W, which would increase its tackiness and cause the interface between the silicon-containing sheet S1 and the substrate support surface 111a to become too firmly bonded. As for how to provide the carbon-containing film between the silicon-containing sheet S1 and the substrate support surface 111a, for example, the following methods may be used. For example, the carbon-containing film may be formed on the substrate support portion 11 before step ST1. Alternatively, for example, in step ST1, the silicon-containing sheet S1 with a carbon-containing film coated on its lower surface may be provided on the substrate support surface 111a.

[0092] <Other Examples of Heat Transfer Members> Figure 11 shows another example of the configuration of a heat transfer member. As shown in Figure 11, the heat transfer member H1 may include a base T, a first silicon-containing sheet S1, a second silicon-containing sheet S2, and a third silicon-containing sheet S3. The first silicon-containing sheet S1 is an example of the "silicon-containing sheet" and "first silicon-containing sheet" in this disclosure. The second silicon-containing sheet S2 is an example of the "other silicon-containing sheet" and "second silicon-containing sheet" in this disclosure. The third silicon-containing sheet S3 is an example of the "third silicon-containing sheet" in this disclosure. The heat transfer member H1 is an example of the "tray" in this disclosure.

[0093] The base T has a substantially circular shape in plan view. The base T may have a concave shape in cross-section. The base T may have a thin disc portion T1 in the center and a thicker annular portion T2 on the outer periphery. The diameter r1 of the disc portion T1 is formed to be slightly larger than the diameter r3 of the substrate W, and can accommodate the silicon-containing sheet S1 and the substrate W inside. The base T may be made of, for example, Si, SiC, SiN, C, or SiO ２ Quartz, Al ２ O ３ , Y ２ O ３ , YAlO ３ (YAP), YOF, W, Ti, TiN, ZeO ２ The base T may be made of a conductive material or an insulating material. The disc portion T1 and the annular portion T2 may be made of the same material or different materials.

[0094] The material and thickness of the first silicon-containing sheet S1 may be the same as those of the silicon-containing sheet S1 shown in Figure 3. The upper surface of the first silicon-containing sheet S1 is coated with a first carbon-containing film C1. The configuration (structure, material, thickness, etc.) of the first carbon-containing film C1 may be the same as those of the carbon-containing film C1 shown in Figure 3. A substrate W is placed on the upper surface (first carbon-containing film C1) of the first silicon-containing sheet S1. That is, the upper surface of the first silicon-containing sheet S1 constitutes a substrate support surface for placing the substrate W. The lower surface of the first silicon-containing sheet S1 abuts against the upper surface of the disc portion T1 of the base T. In one embodiment, the first silicon-containing sheet S1 is adhesive and adheres tightly to the base T.

[0095] The material and thickness of the second silicon-containing sheet S2 may be the same as those of the silicon-containing sheet S1 shown in Figure 3. The diameter of the second silicon-containing sheet S2 may be larger than that of the first silicon-containing sheet S1. The material and thickness of the second silicon-containing sheet S2 may be the same as or different from those of the silicon-containing sheet S1. The lower surface of the second silicon-containing sheet S2 is coated with a second carbon-containing film C2. The configuration (structure, material, thickness, etc.) of the second carbon-containing film C2 may be the same as or different from that of the carbon-containing film C1 shown in Figure 3. The upper surface of the second silicon-containing sheet S2 abuts against the lower surface of the base T. In one embodiment, the second silicon-containing sheet S2 is adhesive and adheres tightly to the base T.

[0096] A third silicon-containing sheet S3 may be placed on the annular portion T2 of the base T. The shape of the third silicon-containing sheet S3 in plan view may be annular, similar to the ring 112. The material and thickness of the third silicon-containing sheet S3 may be the same as those of the silicon-containing sheet S1 shown in Figure 3. A fifth carbon-containing film C5 is coated on the upper surface S3a of the third silicon-containing sheet S3. The configuration (structure, material, thickness, etc.) of the fifth carbon-containing film C5 may be the same as, or different from, the configuration of the carbon-containing film C1 shown in Figure 3. The fifth carbon-containing film C5 formed on the upper surface S3a of the third silicon-containing sheet S3 can abut against the lower surface of the ring 112. The lower surface of the third silicon-containing sheet S3 abuts against the upper surface of the base T. In one embodiment, the third silicon-containing sheet S3 is adhesive and adheres tightly to the base T.

[0097] As shown in Figure 11, the heat transfer member H1 can be transported with the substrate W and ring 112 housed and placed on it. The heat transfer member H1 may be placed, for example, on the substrate support portion 11 of the plasma processing apparatus 1 (see Figure 2). The first carbon-containing film C1 suppresses strong bonding between the substrate W and the first silicon-containing sheet S1 during plasma processing inside the chamber 10, making it easier to separate the two. The second carbon-containing film C2 suppresses strong bonding between the substrate support portion 11 and the second silicon-containing sheet S2 during plasma processing inside the chamber 10, making it easier to separate the two. The fifth carbon-containing film C5 suppresses strong bonding between the ring 112 and the third silicon-containing sheet S3 during plasma processing inside the chamber 10, making it easier to separate the two.

[0098] Next, a substrate processing method using the heat transfer member H1 shown in Figure 11 (hereinafter also referred to as "Method MT2") will be described. Figure 12 is a flowchart of an example of Method MT2. Figure 13A is a schematic diagram illustrating each step of Method MT2. Figure 13B is a diagram illustrating an example of step ST4a. Figure 13C is a diagram illustrating an example of step ST5a. As shown in Figure 12, Method MT2 includes a step STa1 for providing the heat transfer member and a step STa2 for providing the substrate and ring. In one embodiment, Method MT2 may further include a step STa3 for performing plasma processing, a step STa4 for unloading the substrate, and a step STa5 for unloading the heat transfer member. The processing in each step may be performed using the plasma processing apparatus shown in Figures 1 and 2. In the following, the case in which the control unit 2 controls each part of the capacitively coupled plasma processing apparatus 1 (see Figure 2) to execute Method MT2 will be described as an example.

[0099] In step STa1, the heat transfer member H1 is provided. The heat transfer member H1 is provided onto the substrate support surface 111a in the chamber 10, either using a transport device or manually (see Figures 13(a) to (c)).

[0100] In step STa2, the substrate W and the ring 112 are provided to the chamber 10. The substrate W and the ring 112 are each carried into the chamber 10 by a transport arm and placed on the upper surface of the heat transfer member H1 (see Figure 13A (d) to (e)). At this time, the carbon-containing film C1 formed on the upper surface of the silicon-containing sheet S1 is in contact with the lower surface of the substrate W. The substrate W is thermally connected to the substrate support 11 via the heat transfer member H1. The carbon-containing film C5 formed on the upper surface of the silicon-containing sheet S3 is in contact with the lower surface of the ring 112. The ring 112 is thermally connected to the substrate support 11 via the heat transfer member H1.

[0101] In step STa3, plasma treatment is performed (see Figure 13A(e)). The plasma treatment may be the same as that performed in method MT1.

[0102] In step STa4, the substrate W is discharged. By lifting the substrate W, the substrate W and the heat transfer member H1 are separated (see Figure 13A(f)). In one embodiment, the substrate W may be lifted by, for example, a substrate lifter. In one embodiment, the substrate lifter may be equipped with a pin 701w and an actuator (not shown) for moving the pin 701w up and down (see Figure 13B). As described above, separation can be easily performed by peeling off the carbon-containing film C1 present at the interface between the silicon-containing sheet S1 and the substrate W. The substrate W is transported to the outside of the chamber 10 by a transport arm.

[0103] In step STa5, the heat transfer member H1 and the ring 112 are discharged. By lifting the heat transfer member H1, the heat transfer member H1 and the substrate support portion 11 are separated (see Figure 13(g)). In one embodiment, the heat transfer member H1 may be lifted by, for example, a lifter. In one embodiment, the lifter for the heat transfer member H1 may include a pin 701t and an actuator (not shown) for moving the pin 701t up and down (see Figure 13C). Separation can be easily performed by peeling off the carbon-containing film C2 present at the interface between the second silicon-containing sheet S2 and the substrate support portion 11. The heat transfer member H1 is transported to the outside of the chamber 10 by a transport arm (see Figure 13(g)). This completes method MT2.

[0104] In one embodiment, the substrate W may be placed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the substrate W may be provided together as a single unit inside the chamber 10.

[0105] In one embodiment, the ring 112 may be pre-placed on the upper surface of the heat transfer member H1 outside the chamber 10. That is, in step STa1, the heat transfer member H1 and the ring 112 may be provided together in the chamber 10. In this case, the substrate W may also be placed on the upper surface of the heat transfer member H1. That is, in step STa1, the heat transfer member H1, the substrate W, and the ring 112 may be provided together in the chamber 10.

[0106] In one embodiment, the substrate support surface 111a may be pre-coated with a carbon-containing film. In this case, the lower surface of the second silicon-containing sheet S2 does not need to be coated with a carbon-containing film. In step STa1, the heat transfer member H1 may be provided so that the lower surface of the second silicon-containing sheet S2 abuts against the substrate support surface 111a coated with a carbon-containing film. The method for coating the substrate support surface 111a with a carbon-containing film may be the same as the method performed in step ST2 of method MT1.

[0107] In one embodiment, a heat transfer member H1 without a carbon-containing film C1 coating may be provided in step STa1. Then, within the chamber 10, the carbon-containing film may be coated on the upper surface of the first silicon-containing sheet of the heat transfer member H1.

[0108] In one embodiment, in step STa4, the ring 112 may be removed in addition to the substrate W. In this case, the ring 112 and the heat transfer member H1 are separated by lifting the ring 112. At this time, the separation can be easily performed by peeling off the carbon-containing film C5 present at the interface between the silicon-containing sheet S3 and the ring 112.

[0109] In one embodiment, step STa4 may be omitted, and in step STa5, the substrate W and ring 112 may be transported together with the heat transfer member H1.

[0110] In one embodiment, after the completion of step STa4, step STa5 may not be performed, and method MT2 may be performed on other substrates W starting from step STa2 (providing the substrate). That is, the ring 112 and the heat transfer member H1 may be used continuously for plasma treatment of one or more other substrates W.

[0111] <Tests> Next, we will describe the tests conducted to evaluate the tackiness and heat transfer properties of the heat transfer component H. This disclosure is not limited in any way by the following tests.

[0112] (Tack Force Test) First, two types of adhesive silicone-containing sheets with different thermal resistance values ​​were prepared (Sample 1, Sample 2). The tack force of each of these samples (Sample 1, Sample 2) was measured. Specifically, the samples (Sample 1 / Sample 2) were fixed to the top of an alumina stand. A silicone tip (5 mm square) was attached to the probe of the testing machine and pressed against the approximate center of the sample for 10 seconds under conditions of 150°C. The force required to pull the probe away from the sample at a constant speed of 1 mm / second was measured.

[0113] Next, the tack force was measured similarly for each sample after it was coated with a carbon-containing film. The samples (Sample 1 / Sample 2) were fixed to an alumina base so that the carbon-containing film coated side was in contact with the base. A silicon tip (5 mm square) was attached to the probe of the testing machine and pressed against the approximate center of the sample for 10 seconds under conditions of 150°C. The force required to pull the probe away from the sample at a constant speed of 1 mm / second was measured.

[0114] Figure 14 shows the results of the tack force test. As shown in Figure 14, when sample 1 had a carbon-containing coating, the tack force decreased by 85%. When sample 2 had a carbon-containing coating, the tack force decreased by 88%. In the absence of the carbon-containing coating, it is thought that the tackiness of the silicon-containing sheet increased due to the heat of 150°C, causing it to adhere to the alumina base and resulting in a high tack force. On the other hand, when the carbon-containing coating was present, it is thought that the carbon-containing film present at the interface between the alumina base and the sample suppressed the silicon-containing sheet from adhering to the alumina base. Furthermore, it is thought that the peeling off of the carbon-containing film reduced the force pulling the sheet away from the alumina base.

[0115] (Thermal resistance test) For Sample 1 and Sample 2 described above, load: 12 kg·m / sec ２Thermal resistance was measured under temperature conditions of 20°C to 120°C. The thermal resistance was similarly measured after coating each sample with a carbon-containing film for 30 seconds. The thermal resistance was also similarly measured after coating each sample with a carbon-containing film for 60 seconds.

[0116] Figure 15 shows the results of the thermal resistance test. As shown in Figure 15, in each sample, the thermal resistance values ​​of the samples coated with the carbon-containing film for 30 seconds and those coated for 60 seconds were almost the same as those not coated with the carbon-containing film. In other words, coating the silicon-containing sheet with the carbon-containing film did not reduce its thermal conductivity.

[0117] Embodiments of this disclosure further include the following embodiments:

[0118] (Note 1) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and a heat transfer member disposed on the substrate support portion, wherein the heat transfer member comprises an adhesive silicon-containing sheet, and the upper surface of the silicon-containing sheet is coated with a carbon-containing film.

[0119] (Note 2) The substrate processing apparatus according to Note 1, wherein the thickness of the carbon-containing film is 200 nm or less.

[0120] (Note 3) The substrate processing apparatus according to Note 1 or Note 2, wherein the heat transfer member is arranged on the substrate support portion such that the lower surface of the silicon-containing sheet abuts against the substrate support portion.

[0121] (Note 4) The substrate processing apparatus according to Note 3, wherein the lower surface of the silicon-containing sheet is coated with a carbon-containing film.

[0122] (Note 5) The substrate processing apparatus according to Note 4, wherein the thickness of the carbon-containing film on the lower surface of the silicon-containing sheet is 200 nm or less.

[0123] (Note 6) The substrate processing apparatus according to Note 1 or Note 2, wherein the heat transfer member further comprises a base disposed on the lower surface of the silicon-containing sheet and another adhesive silicon-containing sheet disposed on the lower surface of the base, and the heat transfer member is disposed on the substrate support portion such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion.

[0124] (Note 7) The substrate processing apparatus according to Note 6, wherein the lower surface of the other silicon-containing sheet is coated with a carbon-containing film.

[0125] (Note 8) The substrate processing apparatus according to Note 7, wherein the thickness of the carbon-containing film on the lower surface of the other silicon-containing sheet is 200 nm or less.

[0126] (Note 9) The substrate processing apparatus according to any one of Notes 1 to 8, further comprising an RF power supply, wherein the RF power supply is configured to supply a source RF signal for plasma generation to the substrate support.

[0127] (Note 10) The substrate processing apparatus according to Note 9, wherein the substrate support portion further comprises a temperature control module configured to adjust the temperature of the substrate support portion.

[0128] (Note 11) A heat transfer member for a substrate processing apparatus, wherein the heat transfer member comprises an adhesive silicon-containing sheet, and the upper surface of the silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less.

[0129] (Note 12) The heat transfer member according to Note 11, wherein the lower surface of the silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less.

[0130] (Note 13) The heat transfer member according to Note 11 or Note 12, further comprising a base disposed on the lower surface of the silicone-containing sheet, and another adhesive silicone-containing sheet disposed on the lower surface of the base.

[0131] (Note 14) The heat transfer member according to Note 13, wherein the lower surface of the other silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less.

[0132] (Note 15) The heat transfer member according to Notes 11 to 14, wherein the upper surface of the silicon-containing sheet constitutes a support surface for supporting a substrate provided to the substrate processing apparatus or a consumable part within the substrate processing apparatus.

[0133] (Note 16) A substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus comprises a chamber and a substrate support portion disposed within the chamber, and the method comprises: (a) a step of providing a heat transfer member on the substrate support portion in the chamber, wherein the heat transfer member includes an adhesive silicon-containing sheet; (b) a step of coating the upper surface of the silicon-containing sheet with a carbon-containing film; and (c) a step of providing a substrate on the heat transfer member.

[0134] (Note 17) The substrate processing method according to Note 16, wherein the thickness of the carbon-containing film coated in (b) is 200 nm or less.

[0135] (Note 18) The substrate processing method according to Note 16 or Note 17, further comprising the step of (d) coating the substrate support portion with a carbon-containing film before (a).

[0136] (Note 19) The substrate processing method according to Note 18, wherein the thickness of the carbon-containing film coated in (d) is 200 nm or less.

[0137] (Note 20) A heat transfer member for a substrate processing apparatus, comprising a silicon-containing sheet having a first surface and a second surface opposite to the first surface, wherein at least one of the first surface and the second surface of the silicon-containing sheet is coated with a carbon-containing film.

[0138] (Note 21) The heat transfer member described in Note 20, wherein the silicone-containing sheet is a silicone sheet.

[0139] (Note 22) The heat transfer member according to Note 20 or Note 21, wherein the thickness of the silicon-containing sheet is 50 μm or more and 500 μm or less.

[0140] (Note 23) The heat transfer member according to any one of Notes 20 to 22, wherein the silicone-containing sheet further comprises a filler.

[0141] (Note 24) The heat transfer member described in Note 23, wherein the filler comprises alumina or boron nitride.

[0142] (Note 25) The heat transfer member according to Note 23 or Note 24, wherein the average particle size of the filler is 300 μm or less.

[0143] (Note 26) The heat transfer member according to any one of Notes 20 to 25, wherein the thickness of the carbon-containing film is 10 nm or more and 10 μm or less.

[0144] (Note 27) The heat transfer member according to any one of Notes 20 to 26, wherein the thickness of the carbon-containing film is 10 μm or more and 300 μm or less.

[0145] (Note 28) The carbon-containing film is a heat transfer member according to any one of Notes 20 to 27, wherein the carbon-containing film contains a carbon component that forms a carbon-carbon (C-C) bond.

[0146] (Note 29) The heat transfer member according to Note 28, wherein the carbon-containing film includes carbon and hydrogen components that form carbon-hydrogen (C-H) bonds.

[0147] (Note 30) The carbon-containing film is a heat transfer member according to any one of Notes 20 to 29, comprising sp3 carbon and sp2 carbon.

[0148] (Note 31) The heat transfer member according to Note 30, wherein the proportion of sp3 carbon in the carbon contained in the carbon-containing film is greater than the proportion of sp2 carbon.

[0149] (Note 32) The heat transfer member according to any one of Notes 20 to 31, wherein the carbon-containing film is a carbon-containing CVD film.

[0150] (Note 33) The heat transfer member according to any one of Notes 20 to 32, wherein the carbon-containing film is coated on the first surface of the silicon-containing sheet, and a release sheet is provided on the surface of the carbon-containing film and on the second surface of the silicon-containing sheet, respectively.

[0151] (Note 34) The heat transfer member according to any one of Notes 20 to 33, wherein the carbon-containing film is coated on the first and second surfaces of the silicon-containing sheet, and a release sheet is provided on the surface of each of the carbon-containing films coated on the first and second surfaces.

[0152] (Note 35) A tray comprising: a base having a first surface and a second surface opposite to the first surface, wherein the first surface comprises a substrate support surface and a ring support surface, the substrate support surface being configured to support a substrate, and the ring support surface being configured to support a ring assembly arranged to surround the substrate; a first silicon-containing sheet disposed on the substrate support surface of the base; a second silicon-containing sheet disposed on the second surface of the base; and a third silicon-containing sheet disposed on the ring support surface of the base, wherein at least one surface of the first silicon-containing sheet, the second silicon-containing sheet, and the third silicon-containing sheet is coated with a carbon-containing film.

[0153] (Note 36) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and a heat transfer member disposed on the substrate support portion, wherein the heat transfer member comprises a silicon-containing sheet, the silicon-containing sheet having a first surface facing the substrate support portion and a second surface opposite to the first surface, and at least one of the first surface and the second surface is coated with a carbon-containing film.

[0154] (Note 37) The substrate processing apparatus according to Note 36, wherein the substrate support portion comprises a support base and an electrostatic chuck located on the support base, the electrostatic chuck comprises a substrate support surface and a ring support surface, the substrate support surface is configured to support a substrate, and the ring support surface is configured to support a ring assembly arranged to surround the substrate.

[0155] (Note 38) The substrate processing apparatus according to Note 37, wherein the heat transfer member is arranged on the substrate support surface.

[0156] (Note 39) The substrate processing apparatus according to Note 38, wherein the heat transfer member is fixed to the substrate support surface by being pressed together with the substrate by the electrostatic chuck.

[0157] (Note 40) The substrate processing apparatus according to Note 39, wherein the force with which the heat transfer member is pressed against the substrate support surface is 0.01 MPa or more and 1 MPa or less.

[0158] (Note 41) The substrate processing apparatus described in Note 37, wherein the heat transfer member is arranged on the ring support surface.

[0159] (Note 42) The substrate processing apparatus according to Note 41, wherein the heat transfer member is fixed to the ring support surface by being pressed against the ring support surface together with the ring assembly by the electrostatic chuck.

[0160] (Note 43) The substrate processing apparatus according to Note 42, wherein the force with which the heat transfer member is pressed against the ring support surface is 0.01 MPa or more and 1 MPa or less.

[0161] (Note 44) The substrate processing apparatus according to Note 43, wherein the substrate support portion further comprises a fixing member that is fixed to the support base and is configured to sandwich the ring assembly together with the support base, and the heat transfer member is fixed to the ring support surface by being pressed against the ring support surface together with the ring assembly by the fixing member.

[0162] (Note 45) The substrate processing apparatus according to Note 44, wherein the force with which the heat transfer member is pressed against the ring support surface is 0.01 MPa or more and 1 MPa or less.

[0163] (Note 46) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and a heat transfer member disposed on the substrate support portion, wherein the heat transfer member is a base having a first surface and a second surface opposite to the first surface, the first surface comprising a substrate support surface and a ring support surface, the substrate support surface being configured to support a substrate, and the ring support surface being configured to support a ring assembly disposed to surround the substrate; a first silicon-containing sheet disposed on the substrate support surface of the base; a second silicon-containing sheet disposed on the second surface of the base; and a third silicon-containing sheet disposed on the ring support surface of the base, wherein at least one surface of the first silicon-containing sheet, the second silicon-containing sheet, and the third silicon-containing sheet is coated with a carbon-containing film.

[0164] (Note 47) A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; an upper electrode assembly disposed above the substrate support portion, comprising a first plate having a gas inlet for introducing gas into the chamber and a second plate configured for the flow of a heat transfer fluid; and a heat transfer member disposed between the first plate and the second plate, the heat transfer member comprising a silicon-containing sheet, the silicon-containing sheet comprising a first surface facing the first plate and a second surface facing the second plate, and at least one of the first surface and the second surface being coated with a carbon-containing film.

[0165] (Note 48) The substrate processing apparatus according to Note 47, wherein the upper electrode assembly further comprises a fixing member configured to sandwich the first plate between itself and the second plate, and the heat transfer member is fixed to the second plate by being pressed against the second plate together with the first plate by the fixing member.

[0166] (Note 49) The substrate processing apparatus according to Note 48, wherein the force with which the heat transfer member is pressed against the second plate is 0.01 MPa or more and 1 MPa or less.

[0167] (Note 50) A plasma apparatus comprising: a first member configured to receive heat input from a plasma; a second member configured to be heat exchangeable with the first member; and a heat transfer member disposed between the first member and the second member, wherein the heat transfer member comprises a silicon-containing sheet, the silicon-containing sheet having a first surface facing the first member and a second surface facing the second member, and at least one of the first surface and the second surface is coated with a carbon-containing film.

[0168] (Note 51) A plasma processing system comprising: a substrate processing apparatus comprising: a chamber; a substrate support unit disposed within the chamber; a gas supply unit; and a plasma generation unit, wherein the substrate support unit comprises: a support base; an electrostatic chuck located on the support base; and a lifter configured to raise and lower the substrate relative to the electrostatic chuck; a vacuum transfer chamber; a transfer device; and a control unit configured to perform control including: (a) controlling the transfer device to transfer a silicon-containing sheet from the vacuum transfer chamber into the chamber; (b) controlling the lifter to position the silicon-containing sheet on the electrostatic chuck; and (c) controlling the gas supply unit and the plasma generation unit to form a carbon-containing film on the silicon-containing sheet.

[0169] (Note 52) The plasma processing system according to Note 51, wherein the control further includes, after (c), (d) controlling the transport device to transport the substrate from the vacuum transport chamber into the chamber, (e) controlling the lifter to place the substrate on the silicon-containing sheet on which the carbon-containing film is formed, and (f) controlling the electrostatic chuck to cause the substrate and the silicon-containing sheet to be attracted to the electrostatic chuck.

[0170] (Note 53) The plasma processing system according to Note 52, wherein in (f) above, the adsorption force of the silicon-containing sheet by the electrostatic chuck is 0.01 MPa or more and 1 MPa or less.

[0171] (Note 54) The plasma processing system according to Note 52 or Note 53, wherein the control further includes, after (f), (g) controlling the gas supply unit and the plasma generation unit to perform plasma processing on the substrate, (h) controlling the electrostatic chuck and the lifter to separate the substrate from the silicon-containing sheet, and (i) controlling the transport device to transport the substrate from the chamber into the vacuum transport chamber.

[0172] (Note 55) A plasma processing system, a substrate processing apparatus comprising a chamber, a substrate support unit disposed within the chamber, a gas supply unit, and a plasma generation unit, wherein the substrate support unit comprises a support base, an electrostatic chuck located on the support base, and a lifter configured to raise and lower a ring assembly relative to the electrostatic chuck; a vacuum transfer chamber; a transfer device; and a control unit comprising: (a) controlling the transfer device to transfer a heat transfer member from the vacuum transfer chamber into the chamber, wherein the heat transfer member comprises a silicon-containing sheet, the silicon-containing sheet comprises a first surface and a second surface opposite to the first surface, and at least one of the first surface and the second surface is coated with a carbon-containing film; (b) controlling the lifter to position the heat transfer member on the electrostatic chuck such that the first surface of the silicon-containing sheet faces the electrostatic chuck; and (c) controlling the transfer device to transfer a ring assembly from the vacuum transfer chamber into the chamber. A plasma processing system comprising: (e) a control unit configured to perform control including controlling the lifter to position the ring assembly on the second surface of the silicon-containing sheet;

[0173] (Note 56) The plasma processing system according to Note 55, wherein the control further includes, after (e), (f) controlling the electrostatic chuck to attract the ring assembly and the heat transfer member to the electrostatic chuck.

[0174] (Note 57) The plasma processing system according to Note 56, wherein in (f) above, the adsorption force by the electrostatic chuck is 0.01 MPa or more and 1 MPa or less.

[0175] (Note 58) The plasma processing system according to Note 56 or Note 57, wherein the control further includes, after (f), (h) controlling the electrostatic chuck and the lifter to separate the ring assembly from the electrostatic chuck, and (i) controlling the transport device to transport the ring assembly from the chamber into the vacuum transport chamber.

[0176] (Note 59) The plasma processing system according to any one of Notes 55 to 58, wherein the control further includes, after (e), (j) placing a pressing member on the ring assembly and controlling the pressing member to press the ring assembly and the heat transfer member against the electrostatic chuck.

[0177] (Note 60) The plasma processing system according to Note 59, wherein in (j) above, the pressing force by the pressing member is 0.01 MPa or more and 1 MPa or less.

[0178] (Note 61) The plasma processing system according to Note 59 or Note 60, wherein the control further includes, after (j), (k) controlling the electrostatic chuck and the lifter to separate the ring assembly from the electrostatic chuck, and (l) controlling the transport device to transport the ring assembly from the chamber into the vacuum transport chamber.

[0179] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0180] 1...Plasma processing apparatus, 10...Chamber, 11...Substrate support section, 31...RF power supply, 111a...Substrate support surface, C1...Carbon-containing film, C2...Carbon-containing film, H, H1, H2...Heat transfer member, S1...Silicon-containing sheet, S1a...Upper surface of silicon-containing sheet S1, S1b...Lower surface of silicon-containing sheet S1, S2...Second silicon-containing sheet, T...Base, Ta...Upper surface of base, T...Lower surface of base, W...Substrate

Claims

1. A heat transfer member for a substrate processing apparatus, comprising a silicon-containing sheet having a first surface and a second surface opposite to the first surface, wherein at least one of the first surface and the second surface of the silicon-containing sheet is coated with a carbon-containing film.

2. The heat transfer member according to claim 1, wherein the silicone-containing sheet is a silicone sheet.

3. The heat transfer member according to claim 1, wherein the thickness of the silicon-containing sheet is 50 μm or more and 500 μm or less.

4. The heat transfer member according to claim 1, wherein the silicone-containing sheet further comprises a filler.

5. The heat transfer member according to claim 4, wherein the filler comprises alumina or boron nitride.

6. The heat transfer member according to claim 4, wherein the average particle size of the filler is 300 μm or less.

7. The heat transfer member according to claim 1, wherein the thickness of the carbon-containing film is 10 nm or more and 10 μm or less.

8. The heat transfer member according to claim 1, wherein the thickness of the carbon-containing film is 10 μm or more and 300 μm or less.

9. The heat transfer member according to claim 1, wherein the carbon-containing film contains a carbon component that forms a carbon-carbon (C-C) bond.

10. The heat transfer member according to claim 1, wherein the carbon-containing film comprises a carbon component and a hydrogen component that form a carbon-hydrogen (C-H) bond.

11. The heat transfer member according to claim 1, wherein the carbon-containing film comprises sp3 carbon and sp2 carbon.

12. The heat transfer member according to claim 11, wherein the proportion of sp3 carbon in the carbon contained in the carbon-containing film is greater than the proportion of sp2 carbon.

13. The heat transfer member according to claim 1, wherein the carbon-containing film is a carbon-containing CVD film.

14. The heat transfer member according to claim 1, wherein the carbon-containing film is coated on the first surface of the silicon-containing sheet, and a release sheet is provided on the surface of the carbon-containing film and on the second surface of the silicon-containing sheet, respectively.

15. The heat transfer member according to claim 1, wherein the carbon-containing film is coated on the first and second surfaces of the silicon-containing sheet, and a release sheet is provided on the surface of each of the carbon-containing films coated on the first and second surfaces.

16. A ring assembly used in a substrate processing apparatus, comprising: a ring; and a silicon-containing sheet having a first surface and a second surface opposite to the first surface, wherein the first surface abuts the ring and the second surface is coated with a carbon-containing film.

17. The ring assembly according to claim 16, wherein the substrate processing apparatus comprises a substrate support portion, the substrate support portion comprises a substrate support surface and a ring support surface, the substrate support surface is configured to support a substrate, the ring support surface is configured to support a ring assembly arranged to surround the substrate, and the ring assembly is arranged on the ring support surface such that the second surface faces the ring support surface.

18. The ring assembly according to claim 16, wherein the thickness of the carbon-containing film is 10 μm or more and 300 μm or less.

19. A substrate processing apparatus comprising: a chamber; a substrate support portion disposed within the chamber; and a heat transfer member disposed on the substrate support portion, wherein the heat transfer member comprises a silicon-containing sheet, the silicon-containing sheet having a first surface facing the substrate support portion and a second surface opposite to the first surface, and at least one of the first surface and the second surface is coated with a carbon-containing film.

20. The substrate processing apparatus according to claim 19, wherein the thickness of the carbon-containing film is 10 μm or more and 300 μm or less.

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