Spin current generation device using sioc topological insulator, and manufacturing method therefor

Abstract

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

Description

Spin current generator using SIOC phase insulator and method for manufacturing the same

[0001] The present invention relates to a spin current generating device using a SiOC phase insulator and a method for manufacturing the same, and more specifically, to a spin current generating device using a SiOC phase insulator that generates a spin current to eliminate leakage current and generates an endothermic reaction, and a method for manufacturing the same.

[0002] The technical field of the present invention relates to semiconductor devices and methods for fabricating semiconductor devices. Here, semiconductor devices refer to spin current generating elements and devices utilizing the topological insulator characteristics of SiOC as a semiconductor insulating film.

[0003] Specifically, this technology involves applying SiOC topological insulators to fabricate devices with stability and wide bandwidth memory design that offers high mobility without threshold voltage shift issues, particularly when manufacturing MOSFET (Metal / Oxide / Semiconductor - Field Effect Transistor) structures required for memory, displays, transparent displays, OLEDs, touch panels, communication semiconductors, oxide semiconductors, and organic semiconductor devices.

[0004] Generally, among metal oxides, those exhibiting semiconductor properties include indium oxide, tungsten oxide, tin oxide, indium oxide, and zinc oxide, and thin-film transistors using these metal oxides for channel formation are widely known.

[0005] As far as is known, metal semiconductors, oxide semiconductors, and amorphous semiconductor materials such as InSnGaZnO, InGaZnO, AlGaZnO, InSnZnO, In-Al-ZnO, SnGaZnO, SnAlZnO, InZnO, SnZnO, and AlZnO, ZnMgO, SnMgO, InMgO, InO, SnO, and ZnO can be used as metal oxides for the channel layer of transistors.

[0006] Here, heat treatment is performed to aid in the activation of added impurities and to compensate for bonding that occurs during impurity addition. The heat treatment can be performed after semiconductor material deposition or semiconductor device fabrication, and it is desirable to perform the heat treatment for a relatively short period of time.

[0007] In particular, InGaZnO oxide semiconductor materials have an amorphous structure, excellent on / off characteristics, and high field-effect mobility μ fet It is attracting attention as an oxide semiconductor material for realizing transparent displays because it has [this].

[0008] However, there are problems with threshold voltage shift and instability caused by charge transfer due to defects or impurities within the energy bandgap, and SiOC topological insulators capable of generating spin current are attracting attention as a fundamental solution.

[0009] As devices become smaller, the SiO2 thin films used as gate insulators for transistors exhibit a problem where leakage current increases below the threshold voltage, making it impossible to ensure stability.

[0010] Using SiOC topological insulators generates spin current, eliminating leakage current, and the spin current, which is vacuum energy, also reduces heat generation.

[0011] Topologically, antiparticles (topological insulators) have one hole, while particles (electrons) have two holes. Having one hole and having two holes differ in physical, chemical, and electrical properties, and according to the principle of symmetry in nature, they are distinguished by the stability of the spin (antiparticle) and the mobility of the electron (particle).

[0012] SiOC thin films are topological insulators with vacuum energy created using the principle of the pn junction depletion layer of semiconductors, and can control heat through the characteristic that resistance changes as temperature changes according to the magnetoresistance characteristic in which resistance varies from 0Ω to ∞Ω.

[0013] Since vacuum energy is cold energy, an endothermic reaction occurs, and a spin current generator using a SiOC topological insulator can reduce the heat generated inside electronic devices.

[0014] The present invention is designed to solve the aforementioned problems and aims to provide a spin current generating device and a method for manufacturing the same, which can reduce heat generation by generating spin current, thereby enabling the design of a wide bandwidth memory circuit that can solve leakage current reduction and threshold voltage shift problems by using a SiOC phase insulator that generates spin current, the manufacture of a transistor and a stable inverter that ensure stability, the manufacture of a semiconductor device using a silicon wafer, a glass substrate and a transparent flexible substrate by enabling a low-temperature process, and the reduction of heat generation by generating spin current, which is cold vacuum energy.

[0015] A spin current generating device using a SiOC topological insulator according to the present invention for solving the aforementioned problem comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100); wherein the gate insulating film (100) is composed of a SiOC topological insulator and has a dielectric constant of 0.01 to 2.5.

[0016] According to another embodiment of the present invention, the gate insulating film (100) is formed on an n-type silicon wafer, and a positive (+) current is operated when the applied voltage is negative (-) bias, and a negative (-) current is operated when the applied voltage is positive (+) bias.

[0017] A spin current generating device using a SiOC phase insulator according to another embodiment of the present invention comprises: a substrate (200); a SiOC phase insulator (100) disposed on the substrate (200); a first electrode (301) disposed on the SiOC phase insulator (100); a second electrode (302) disposed on the SiOC phase insulator (100); and a plurality of spin electrodes (304) disposed in a row in the space between the first electrode (301) and the second electrode (302) on the SiOC phase insulator (100); wherein the SiOC phase insulator (100) generates a spin current by means of a potential barrier of the SiOC phase insulator according to the voltage environment between the first electrode (301) and the second electrode (302), thereby preventing the generation of leakage current.

[0018] A spin current generating device using a SiOC phase insulator according to another embodiment of the present invention comprises: a substrate (200); a SiOC phase insulator (100) disposed on the substrate (200); a first electrode (301) disposed on the SiOC phase insulator (100); a second electrode (302) disposed on the SiOC phase insulator (100); and wiring (400) formed on the first electrode (301) and the second electrode (302), respectively, and the dielectric constant of the SiOC phase insulator is configured to be 0.01 to 2.5.

[0019] According to another embodiment of the present invention, the wiring (400) may be formed into a plate-like structure.

[0020] According to another embodiment of the present invention, the oxide thin film (500) may be composed of any one of InSnGaZnO, InGaZnO, AlGaZnO, InSnZnO, In-Al-ZnO, SnGaZnO, SnAlZnO, InZnO, SnZnO, AgZnO, ITO, ZTO (Ti-ZnO), SiZnO, AlZnO, ZnMgO, SnMgO, InMgO, InO, SnO, ZnO, graphene, and graphene oxide (GO).

[0021] According to another embodiment of the present invention, the device may further comprise a heat sink (700) disposed respectively on the lower part of the substrate (200) and on the upper part of the wiring (400).

[0022] A spin current generating device using a SiOC phase insulator according to another embodiment of the present invention comprises: a substrate (200); a SiOC phase insulator (100) disposed on the substrate (200); an oxide thin film (500) disposed on each side of the SiOC phase insulator (100); an upper SiOC phase insulator (150) disposed on each side of the oxide thin film (500); a first electrode (301) disposed on one side of the upper SiOC phase insulator (150) on both sides; a second electrode (302) disposed on the other side of the upper SiOC phase insulator (150) on both sides; and wiring (400) formed on each side of the first electrode (301) and the second electrode (302), wherein the dielectric constant of the SiOC phase insulator is configured to be 0.01 to 2.5.

[0023] According to the present invention, by using a SiOC phase insulator as the gate insulating film, it is possible to manufacture a transistor and a stable inverter that ensure leakage current blocking, a wide bandwidth memory circuit design without threshold voltage shift, and stability.

[0024] In addition, according to the present invention, a manufacturing process is possible at a low temperature, so a semiconductor device using a silicon substrate, a glass substrate, or a transparent flexible substrate can be manufactured.

[0025] In addition, the spin current generating device according to the present invention can reduce heat generation in electronic devices such as inverters, memory semiconductors, HBM (high bandwidth memory), interposers, TSV (through silicon via), audio, LED lighting, etc., where severe heat generation is a problem.

[0026] In addition, according to the present invention, by depositing a SiOC topological insulator on a glass substrate, a PCB substrate, an OLED substrate, a circuit board for a display, the surface of an electric vehicle, or the surface of a battery, insulation characteristics can be improved and heat generation can be reduced.

[0027] FIG. 1 is a cross-sectional view of a spin current generating device according to a first embodiment of the present invention.

[0028] FIGS. 2 to 4 are drawings illustrating a spin current generating device according to a second embodiment of the present invention.

[0029] FIG. 5 is a cross-sectional view of a spin current generating device according to a third embodiment of the present invention.

[0030] FIGS. 6 and FIGS. 7 are drawings illustrating a spin current generating device according to a fourth embodiment of the present invention.

[0031] FIG. 8 is a cross-sectional view of a spin current generating device according to the fifth embodiment of the present invention.

[0032] FIG. 9 is a cross-sectional view of a spin current generating device according to the 6th embodiment of the present invention.

[0033] FIG. 10 is a cross-sectional view of a spin current generating device according to the seventh embodiment of the present invention.

[0034] FIG. 11 is a cross-sectional view of a spin current generating device according to the eighth embodiment of the present invention.

[0035] FIG. 12 is a cross-sectional view of a spin current generating device according to the ninth embodiment of the present invention.

[0036] Figures 13 to 15 are correlation diagrams of electron generation and electromagnetic energy based on the spin current generation principle and the principle of symmetry of nature.

[0037] FIG. 16 is a graph showing the gate current in a linear manner when the gate voltage of a spin current generator according to the first embodiment of the present invention is applied as a positive bias and a negative bias.

[0038] FIGS. 17 and 18 are graphs showing the change in drain current of a spin current generator according to the first embodiment of the present invention converted using the log method.

[0039] FIG. 19 is a diagram comparing an LED lighting device to which a spin current generator according to the present invention is applied with an LED lighting device according to the prior art.

[0040] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the description of the invention. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0041] However, in describing the embodiments, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description is omitted. Furthermore, the sizes of each component in the drawings may be exaggerated for illustrative purposes and do not represent the actual sizes applied.

[0042] Furthermore, throughout the specification, when a component is referred to as being "connected" or "joined" with another component, it should be understood that the component may be directly connected or joined to the other component, but unless specifically stated otherwise, it may also be connected or joined through an intermediate component. Additionally, throughout the specification, when a part is described as "including" a component, unless specifically stated otherwise, this means that it may include additional components rather than excluding other components.

[0043] FIG. 1 is a cross-sectional view of a spin current generating device according to a first embodiment of the present invention.

[0044] The spin current generating device according to the embodiment of FIG. 1 is a transistor, more specifically, an inverted stagger type transistor.

[0045] The above spin current generating device comprises a substrate (200), a gate electrode (303), a gate insulating film (100), a source electrode (301), and a drain electrode (302).

[0046] The gate electrode (303) is disposed on the substrate (200), and a gate insulating film (100) is disposed on the substrate (200) and the gate electrode (303).

[0047] At this time, the gate insulating film (100) is composed of a SiOC topological insulator, more specifically, the gate insulating film (100) is made of amorphous SiOC, and the dielectric constant of the gate insulating film is 0.01 to 2.5.

[0048] In addition, the gate insulating film (100) is formed on an n-type silicon wafer, and when the applied voltage is negative (-) bias, a positive (+) current is operated, and when the applied voltage is positive (+) bias, a negative (-) current is operated.

[0049] In this way, in the spin current generator shown in FIG. 1, spin current is generated by a potential barrier in the phase insulator (100), thereby preventing the generation of leakage current.

[0050]

[0051] FIGS. 2 to 4 are drawings illustrating a spin current generating device according to a second embodiment of the present invention, where FIG. 2 is a cross-sectional view of the spin current generating device according to the second embodiment of the present invention, FIG. 3 is a top view of the spin current generating device according to the second embodiment of the present invention, and FIG. 4 is a drawing illustrating a spin electrode of the spin current generating device according to the second embodiment of the present invention.

[0052] A spin current generating device according to the embodiments of FIGS. 2 to 4 comprises a substrate (200), a gate electrode (303) disposed on the substrate (200), a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303), a source electrode (301) disposed on the gate insulating film (100), and a drain electrode (302) disposed on the gate insulating film (100).

[0053] The above SiOC phase insulator (100) prevents the generation of leakage current by generating a spin current through the potential barrier of the SiOC phase insulator according to the voltage environment between the source electrode (301) and the drain (302) electrode.

[0054] At this time, in the embodiments of FIGS. 2 to 4, the SiOC phase insulator (100) is configured to include a plurality of spin electrodes (304) arranged in a row in the space between the source electrode (301) and the drain electrode (302).

[0055] That is, the embodiment of FIG. 2 is a structure in which an auxiliary source electrode and an auxiliary drain electrode (304) are repeatedly arranged between the first electrode (301) and the second electrode (302) on the left and right sides of the SiOC phase insulator (100).

[0056] The spin current can be further amplified through a structure including a plurality of spin electrodes (304) of the spin current generating device according to the embodiment of FIG. 2.

[0057]

[0058] FIG. 5 is a cross-sectional view of a spin current generating device according to a third embodiment of the present invention. The spin current generating device according to the embodiment of FIG. 5 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), a first electrode (301) disposed on the SiOC phase insulator (100), and a second electrode (302) disposed on the SiOC phase insulator (100).

[0059] At this time, in the embodiment of FIG. 5, the SiOC phase insulator (100) is configured to include a plurality of spin electrodes (304) arranged in a row in the space between the first electrode (301) and the second electrode (302).

[0060] The spin current can be further amplified through a structure including a plurality of spin electrodes (304) of the spin current generating device according to the embodiment of FIG. 5.

[0061]

[0062] FIGS. 6 and FIGS. 7 are drawings illustrating a spin current generating device according to a fourth embodiment of the present invention.

[0063] A spin current generating device according to the embodiments of FIGS. 6 and 7 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), a first electrode (301) disposed on the SiOC phase insulator (100), a second electrode (302) disposed on the SiOC phase insulator (100), and wiring (400) formed on the first electrode (301) and the second electrode (302), respectively.

[0064] At this time, the dielectric constant of the SiOC phase insulator (100) may be 0.01 to 2.5, and the wiring (400) may be formed into a plate-shaped structure.

[0065]

[0066] FIG. 8 is a cross-sectional view of a spin current generating device according to the fifth embodiment of the present invention.

[0067] A spin current generating device according to the embodiment of FIG. 8 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), an oxide thin film (500) disposed on each side of the SiOC phase insulator (100), an upper SiOC phase insulator (150) disposed on each side of the oxide thin film (500), a first electrode (301) disposed on one side of the upper SiOC phase insulator (150) on both sides, a second electrode (302) disposed on the other side of the upper SiOC phase insulator (150) on both sides, and wiring (400) formed on each of the first electrode (301) and the second electrode (302).

[0068] At this time, the wiring (400) may be configured as a plate-shaped structure with a wide area on the left and right sides.

[0069] The oxide thin film (500) above is for amplifying spin current and may be configured to include an oxide semiconductor, graphene, or graphene oxide (GO).

[0070] More specifically, the oxide thin film (500) may be configured to include any one of InSnGaZnO, InGaZnO, AlGaZnO, InSnZnO, In-Al-ZnO, SnGaZnO, SnAlZnO, InZnO, SnZnO, AgZnO, ITO, ZTO (Ti-ZnO), SiZnO, AlZnO, ZnMgO, SnMgO, InMgO, InO, SnO, ZnO, graphene, and graphene oxide (GO).

[0071]

[0072] FIG. 9 is a cross-sectional view of a spin current generating device according to the 6th embodiment of the present invention.

[0073] A spin current generating device according to the embodiment of FIG. 9 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), and wiring (400) disposed on each side of the SiOC phase insulator (100).

[0074] At this time, the wiring (400) may be configured as a plate-shaped structure with a wide area on the left and right sides.

[0075]

[0076] FIG. 10 is a cross-sectional view of a spin current generating device according to the seventh embodiment of the present invention.

[0077] A spin current generating device according to the embodiment of FIG. 10 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), a first electrode (301) disposed on the SiOC phase insulator (100), a second electrode (302) disposed on the SiOC phase insulator (100), and wiring (400) formed on the first electrode (301) and the second electrode (302), respectively.

[0078] At this time, in the embodiment of FIG. 10, it may be configured to further include a heat sink (700) disposed on the lower part of the substrate (200) and the upper part of the wiring (400), respectively.

[0079]

[0080] FIG. 11 is a cross-sectional view of a spin current generating device according to the eighth embodiment of the present invention.

[0081] A spin current generating device according to the embodiment of FIG. 11 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), a source electrode (301) disposed on the SiOC phase insulator (100), an upper wiring (401) disposed on the source electrode (301), and a lower wiring (402) disposed on the lower part of the substrate (200) to provide the function of a drain electrode.

[0082]

[0083] FIG. 12 is a cross-sectional view of a spin current generating device according to the ninth embodiment of the present invention.

[0084] A spin current generating device according to the embodiment of FIG. 12 comprises a substrate (200), a SiOC phase insulator (100) disposed on the substrate (200), an oxide thin film (500) disposed on the SiOC phase insulator (100), an upper SiOC phase insulator (150) disposed on the oxide thin film (500), a source electrode (301) disposed on the upper SiOC phase insulator (150), an upper wiring (401) disposed on the source electrode (301), and a lower wiring (402) disposed on the lower part of the substrate (200) to provide the function of a drain electrode.

[0085]

[0086] Figures 13 to 15 are correlation diagrams of electron generation and electromagnetic energy based on the spin current generation principle and the principle of symmetry of nature.

[0087] The characteristics of a transistor are determined by mobility and stability. Mobility is a characteristic of electrons (particles), while stability is a characteristic of spins (antiparticles), exhibiting symmetry with one another. Electrons possess directionality to enhance mobility, whereas spins lack directionality to enhance stability. Topologically, mobility and stability represent different characteristics; since mobility involves two directions, it signifies a material state with two holes, whereas stability lacks directionality, signifying a material state with no holes or only one. Since semiconductors exist as n-type and p-type semiconductors, semiconductors are materials with two holes and generate leakage current. Topological insulators lack directionality due to the occurrence of quantum tunneling. Therefore, topological insulators are materials with no holes or only one hole.

[0088] The presence of one hole signifies that there is a particle but it does not move; therefore, the appearance of an electron that cannot move implies a transition from a fermion field (topological insulator) to an electromagnetic field. Consequently, the spin (antiparticle) current is converted into an electron (particle) current, and energy is continuously transferred according to the law of conservation of energy. The wave energy of the antiparticle is continuously passed on to the wave energy of the particle.

[0089]

[0090] FIG. 16 is a graph showing the gate current in a linear manner when the gate voltage of a spin current generator according to the first embodiment of the present invention is applied as a positive bias and a negative bias, and FIG. 17 and FIG. 18 are graphs showing the change in drain current of a spin current generator according to the first embodiment of the present invention converted into a logarithmic manner.

[0091] As the size of semiconductor devices decreases, the thickness of the gate insulating film also decreases. However, since there is a limit to how thin the commonly used SiO2 thin film can be made for the gate insulating film, leakage current increases.

[0092] When a SiOC topological insulator is deposited on a silicon wafer, a PN junction occurs between the silicon wafer and the SiOC thin film, and a vacuum is created as a depletion layer is formed, so even if the thickness is reduced, the insulation characteristics become excellent and leakage current is reduced. When using a SiOC topological insulator, if a negative bias is applied to the gate voltage as in Fig. 16, a positive (+) current appears in Figs. 17 and 18 in response, and if a positive bias is applied to the gate voltage as in Fig. 16, a negative (-) current appears in Figs. 17 and 18 in response, exhibiting quantum tunneling characteristics.

[0093] In addition, FIGS. 16 to 18 show the drain current according to the drain voltage applied during the operation of the spin current generator.

[0094] Referring to Fig. 16, for quantum tunneling to occur at the interface between the semiconductor and the topological insulator, it is advantageous for the drain voltage to be smaller.

[0095] In this case, the drain bias is 10 as a condition for tunneling to occur. -4 It is desirable to apply a voltage in the range of ~1 V.

[0096] As a result, the spin current generator can increase mobility by generating a spin current that has bidirectional properties in the negative and positive directions relative to the gate voltage of 0V, and stability is also ensured through threshold voltage shift.

[0097] Meanwhile, in order to generate a spin current from the spin generated inside the SiOC topological insulator, the electrodes (301, 302, 303) of the spin current generating device may be configured to include a conductor such as Al, Cu, Ag, or Au.

[0098]

[0099] FIG. 19 is a diagram comparing an LED lighting device to which a spin current generator according to the present invention is applied with an LED lighting device according to the prior art.

[0100] When the spin current generator according to the present invention is connected to a 120W LED light, the interference phenomenon of particles is eliminated, and the clarity of the light becomes distinct and bright due to the diffraction phenomenon.

[0101] SiOC topological insulators that generate spin currents have characteristics that prevent leakage current and reduce heat generation, and are highly stable materials that enable the design of wide bandwidth memories without being limited by threshold voltage.

[0102]

[0103] From now on, with reference to FIG. 1, a method for manufacturing a spin current generating device according to the first embodiment of the present invention will be described.

[0104] A spin current generating device according to the first embodiment of the present invention forms a gate electrode (303) on a substrate (200), and then forms a SiOC phase insulator as a gate insulating film (100) on the substrate (200) and the gate electrode (303).

[0105] Afterwards, source electrodes (301) and drain electrodes (302) are formed on both sides of the gate insulating film (100) to complete the process.

[0106] At this time, the spin current generating device according to the present invention is a quantum tunneling transistor, and when forming a phase insulator as the gate insulating film (100), it is made of SiOC, and the dielectric constant of the phase insulator is limited to a range of 0.01 to 2.5.

[0107] And, when forming a SiOC phase insulator as the gate insulating film (100), it is formed by sputtering, and at this time, it is preferable that the carbon content in the composition of the SiOC target of the phase insulator be in the range of 0.1 to 10%.

[0108] In order to keep the dielectric constant of the SiOC topological insulator within the above range, it is necessary to reduce the polarization within the SiOC topological insulator.

[0109] In order to reduce the polarization included in the composition of the SiOC topological insulator as described above, the polarization that can be increased by carbon and oxygen must be lowered. At this time, if the carbon content of the target is 0.1% or less, it becomes difficult to form the SiOC topological insulator, and on the other hand, if the carbon content is 10% or more, the polarization caused by carbon increases. Therefore, in order to limit the dielectric constant of the SiOC topological insulator to a range of 0.01 to 2.5, the carbon content in the composition of the SiOC target is limited to a range of 0.1 to 10%.

[0110] In addition, when manufacturing a thin-film transistor, which is a spin current generating device according to the present invention, DC-sputtering or RF-sputtering may be used when forming the gate insulating film (100).

[0111] Here, the step of forming the SiOC phase insulator (100) may further include a step of heat treating at 0°C to 450°C after depositing the SiOC phase insulator.

[0112] In the detailed description of the present invention as described above, specific embodiments have been described. However, various modifications are possible within the scope of the present invention. The technical concept of the present invention should not be limited to the aforementioned embodiments, but should be defined by the claims as well as equivalents thereof.

Claims

1. Substrate (200); A gate electrode (303) disposed on the substrate (200); A gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); A source electrode (301) disposed on the gate insulating film (100); and It includes a drain electrode (302) disposed on the gate insulating film (100); and The above gate insulating film (100) is, A spin current generating device characterized by being composed of a SiOC topological insulator and having a dielectric constant of 0.01 to 2.

5.

2. In Claim 1, The above gate insulating film (100) is, It is formed on an n-type silicon wafer, and A spin current generating device characterized by operating a positive (+) current when the applied voltage is negative (-) biased, and operating a negative (-) current when the applied voltage is positive (+) biased.

3. Substrate (200); A SiOC phase insulator (100) disposed on the above substrate (200); A first electrode (301) disposed on the above SiOC phase insulator (100); A second electrode (302) disposed on the above SiOC phase insulator (100); and A plurality of spin electrodes (304) arranged in a row in the space between the first electrode (301) and the second electrode (302) on the above SiOC topological insulator (100); The above SiOC phase insulator (100) is, A spin current generating device characterized by generating a spin current by means of a potential barrier of the SiOC phase insulator according to the voltage environment between the first electrode (301) and the second electrode (302), thereby preventing the generation of leakage current.

4. Substrate (200); A SiOC phase insulator (100) disposed on the above substrate (200); A first electrode (301) disposed on the above SiOC phase insulator (100); A second electrode (302) disposed on the above SiOC phase insulator (100); and It includes wiring (400) formed on the first electrode (301) and the second electrode (302), respectively. A spin current generating device characterized in that the dielectric constant of the above SiOC topological insulator is 0.01 to 2.

5.

5. In Claim 4, The above wiring (400) is, A spin current generating device characterized by being formed in a plate-like structure.

6. In Claim 4, The above oxide thin film (500) is, A spin current generating device characterized by being composed of any one of InSnGaZnO, InGaZnO, AlGaZnO, InSnZnO, In-Al-ZnO, SnGaZnO, SnAlZnO, InZnO, SnZnO, AgZnO, ITO, ZTO (Ti-ZnO), SiZnO, AlZnO, ZnMgO, SnMgO, InMgO, InO, SnO, ZnO, graphene, and graphene oxide (GO).

7. In Claim 4, A heat sink (700) disposed respectively on the lower part of the substrate (200) and the upper part of the wiring (400); A spin current generator characterized by further including 8. Substrate (200); A SiOC phase insulator (100) disposed on the above substrate (200); Oxide thin films (500) respectively disposed on both sides of the above SiOC phase insulator (100); Upper SiOC phase insulators (150) respectively disposed on the oxide thin films (500) on both sides; A first electrode (301) disposed on one side of the upper SiOC phase insulators (150) on both sides; A second electrode (302) disposed on the other side among the upper SiOC phase insulators (150) on both sides; and It includes wiring (400) formed on the first electrode (301) and the second electrode (302), respectively. A spin current generating device characterized in that the dielectric constant of the above SiOC topological insulator is 0.01 to 2.

5.

9. In Claim 8, The above wiring (400) is, A spin current generating device characterized by being formed in a plate-like structure.

10. In Claim 8, The above oxide thin film (500) is, A spin current generating device characterized by being composed of any one of InSnGaZnO, InGaZnO, AlGaZnO, InSnZnO, In-Al-ZnO, SnGaZnO, SnAlZnO, InZnO, SnZnO, AgZnO, ITO, ZTO (Ti-ZnO), SiZnO, AlZnO, ZnMgO, SnMgO, InMgO, InO, SnO, ZnO, graphene, and graphene oxide (GO).

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