Semiconductor capacitor and method for manufacturing semiconductor capacitor
The semiconductor capacitor design addresses the challenge of increasing voltage without thickening dielectric films by connecting capacitors in series within separate grooves on a substrate, achieving high voltage withstand and simplified manufacturing with enhanced capacitance.
WO2026110256A1PCT designated stage Publication Date: 2026-05-28NISSAN MOTOR CO LTD
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- NISSAN MOTOR CO LTD
- Filing Date
- 2024-11-20
- Publication Date
- 2026-05-28
Smart Images
Figure JP2024041088_28052026_PF_FP_ABST
Abstract
This semiconductor capacitor includes a substrate, a first capacitor, and a second capacitor. The substrate has a first main surface, and a first groove and a second groove are formed at different positions on the first main surface. The first capacitor includes a first laminated structure in which two or more first dielectric films and two or more first conductive films are alternately laminated at least on an inner surface of the first groove. The second capacitor includes a second laminated structure in which two or more second dielectric films and two or more second conductive films are alternately laminated on at least the inner surface of the second groove. The first capacitor and the second capacitor are connected in series.
Need to check novelty before this filing date? Find Prior Art
Citation Information
Patent Citations
Capacitor and mounting board including the same
JP2019021898A
capacitor
JP2020027821A
Semiconductor device
JP2021114531A