Solar cell, photovoltaic device, electric apparatus, and power generation apparatus

Abstract

The present application discloses a solar cell, a photovoltaic device, an electric apparatus, and a power generation apparatus. The solar cell comprises a first electrode layer, a light absorption layer, a passivation layer, an electron transport layer, and a second electrode layer that are stacked, wherein the passivation layer comprises a passivation material; alternatively, the solar cell comprises a first electrode layer, a light absorption layer, an electron transport layer, and a second electrode layer that are stacked, wherein the light absorption layer or the electron transport layer comprises a passivation material, and the passivation material comprises a cationic group and an anionic group. In the present application, the use of such a passivation material can optimize the energy level matching degree between the upper surface of a light absorption layer and an electron transport layer, and passivate surface defects of the light absorption layer, facilitating electron transport, thereby improving the photoelectric conversion efficiency of solar cells.

Description

Solar cells, photovoltaic devices, electrical appliances and power generation devices

[0001]

[0002] Cross-references to related applications

[0003] This application claims priority to Chinese patent application 202411752697.8, filed on November 29, 2024, entitled “Solar Cells, Photovoltaic Devices, Electrical Appliances and Power Generation Devices”, the entire contents of which are incorporated herein by reference. Technical Field

[0004] This application relates to the field of solar cell technology, and in particular to solar cells, photovoltaic devices, electrical appliances, and power generation devices. Background Technology

[0005] Solar cells have attracted widespread attention because they can directly convert sunlight into electricity without causing environmental pollution, and can be applied to a wide range of fields, including aerospace, industry, commerce, agriculture and communications.

[0006] A solar cell comprises a first electrode layer, a light-absorbing layer, an electron transport layer, and a second electrode layer stacked together. Holes generated in the light-absorbing layer are transported to the first electrode layer, and electrons generated in the light-absorbing layer are transported to the second electrode layer. An electron transport layer is placed between the light-absorbing layer and the second electrode layer to promote electron transport. To further improve the performance of solar cells, passivation materials are typically used to passivate defects in the light-absorbing layer. However, passivation materials in related technologies may increase the energy level barrier between the light-absorbing layer and the electron transport layer, affecting carrier transport and leading to a decrease in the photoelectric conversion efficiency of the solar cell. Summary of the Invention

[0007] In view of the above-mentioned technical problems, this application provides a solar cell, a photovoltaic device, an electrical device, and a power generation device to reduce the energy level barrier between the surface of the light absorption layer and the electron transport layer, thereby improving the photoelectric conversion efficiency.

[0008] The first technical solution adopted in this application is: providing a solar cell, the solar cell comprising a first electrode layer, a light-absorbing layer, a passivation layer, an electron transport layer, and a second electrode layer stacked together, the light-absorbing layer being located between the first electrode layer and the passivation layer, the electron transport layer being located on the side of the passivation layer away from the light-absorbing layer, and the second electrode layer being located on the side of the electron transport layer away from the passivation layer, the passivation layer comprising a passivation material; or, the solar cell comprising a first electrode layer, a light-absorbing layer, an electron transport layer, and a second electrode layer stacked together, the light-absorbing layer and the electron transport layer being disposed between the first electrode layer and the second electrode layer, the light-absorbing layer being located between the first electrode layer and the electron transport layer, the light-absorbing layer or the electron transport layer comprising a passivation material; wherein, the passivation material comprises cationic groups and anionic groups; the cationic groups include The Ar group includes one of the substituted or unsubstituted polycyclic rings; R1 includes a substituted or unsubstituted alkylene ring with a chain length of 1 to 10; R2, R3 and R4 each independently include H and one of the substituted or unsubstituted alkyl groups with a chain length of 1 to 4; the anionic group includes a halogen or halide-like anion.

[0009] In the technical solution of this application embodiment, a passivation layer is disposed between the light absorption layer and the electron transport layer, and the passivation layer includes a passivation material; or, a passivation material is disposed in the light absorption layer or the electron transport layer, that is, the passivation material is mixed and disposed in the light absorption layer or the electron transport layer. The cationic groups in the passivation material include The Ar group includes one of the substituted or unsubstituted polycyclic rings, and the cationic group has a diimide structure. It is a strong electron acceptor with a strong electron-withdrawing ability. Its diimide structure forms a cationic group with the nitrogen cation, which also has electron-withdrawing ability. This method allows for deeper energy levels in the passivation material itself. Using this passivation material as a passivation layer, or incorporating it into the light absorption layer or electron transport layer, can deepen the energy levels on the upper surface of the light absorption layer, resulting in better energy level matching between the light absorption layer and the electron transport layer, which is beneficial for improving the photoelectric conversion efficiency of the solar cell. The upper surface of the light absorption layer is the surface of the light absorption layer closest to the electron transport layer. Furthermore, the anionic groups in this passivation material include halogen or halide-like anions. These anionic groups passivate surface defects in the light absorption layer, and the halogen or halide-like ions can fill vacancy defects on the surface of the light absorption layer, further improving the photoelectric conversion efficiency of the solar cell.

[0010] In some embodiments, the Ar group comprises a substituted or unsubstituted polycyclic ring with a cyclic number of 5 to 8 atoms.

[0011] In the technical solution of this application embodiment, the Ar group is selected from the above-mentioned polycyclic rings. Combined with the diimide structure and the nitrogen cation, it can achieve deeper energy levels in the passivation material itself. Using this passivation material as a passivation layer, or mixing it into the light absorption layer or electron transport layer, can deepen the energy levels on the upper surface of the light absorption layer, resulting in better energy level matching between the light absorption layer and the electron transport layer, which is beneficial to improving the photoelectric conversion efficiency of the solar cell. The upper surface of the light absorption layer is the surface of the light absorption layer closest to the electron transport layer.

[0012] In some embodiments, the Ar group includes one of a substituted or unsubstituted aromatic group or an aromatic heterocyclic group.

[0013] In the technical solution of this application embodiment, the Ar group includes one of substituted or unsubstituted aromatic groups or aromatic heterocyclic groups, providing a conjugated group in the passivation material, promoting the electron-withdrawing ability of the diimide structure, and achieving a deeper energy level in the passivation material itself. Using this passivation material as a passivation layer, or mixing it into the light absorption layer or electron transport layer, can deepen the energy level of the upper surface of the light absorption layer, resulting in better energy level matching between the light absorption layer and the electron transport layer, which is beneficial to improving the photoelectric conversion efficiency of the solar cell. The upper surface of the light absorption layer is the surface of the light absorption layer closest to the electron transport layer.

[0014] In some embodiments, the Ar group includes one of benzene ring and thiophene.

[0015] In the technical solution of this application embodiment, the Ar group is selected from the above-mentioned groups to provide conjugated groups in the passivation material, promote the electron-withdrawing ability of the diimide structure, and realize a deeper energy level of the passivation material itself. By using this passivation material as a passivation layer, or by mixing this passivation material in the light absorption layer or electron transport layer, the energy level on the upper surface of the light absorption layer can be deepened, so that the energy level matching degree between the light absorption layer and the electron transport layer is better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell.

[0016] In some embodiments, the anionic group includes I - ,Br - Cl - At least one of them.

[0017] In the technical solution of this application embodiment, the anionic group is selected from the above-mentioned halogens, which are easier to connect with the cationic groups and facilitate subsequent process preparation; moreover, halogens have low steric hindrance, which is conducive to forming passivation materials with cationic groups. At the same time, the above-mentioned anionic groups play a role in passivating the surface defects of the light absorption layer, and halogen ions can fill the vacancy defects on the surface of the light absorption layer, which is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0018] In some embodiments, the passivating material includes , , , and At least one of them.

[0019] In the technical solution of this application embodiment, the passivation material selected from the above-mentioned range has a diimide structure. The diimide structure is a strong electron acceptor and has a strong electron-withdrawing ability. The diimide structure and the nitrogen cation, which also has an electron-withdrawing ability, form a cationic group. This method allows for deeper energy levels in the passivation material itself. Using this passivation material as a passivation layer, or incorporating it into the light absorption layer or electron transport layer, can deepen the energy levels on the upper surface of the light absorption layer, resulting in better energy level matching between the light absorption layer and the electron transport layer, which is beneficial for improving the photoelectric conversion efficiency of the solar cell. Specifically, the upper surface of the light absorption layer is the side closest to the electron transport layer. Furthermore, the anionic groups in this passivation material passivate surface defects in the light absorption layer, and halide ions or halide-like ions can fill vacancy defects on the surface of the light absorption layer, further enhancing the photoelectric conversion efficiency of the solar cell.

[0020] In some implementations, the thickness of the passivation layer is 1 nm to 20 nm.

[0021] In the technical solution of this application embodiment, the thickness of the passivation layer is within the aforementioned range. The passivation material in the passivation layer can deepen the energy level on the upper surface of the light absorption layer, resulting in better energy level matching between the light absorption layer and the electron transport layer, which is beneficial to improving the photoelectric conversion efficiency of the solar cell. Specifically, the upper surface of the light absorption layer is the side of the light absorption layer closest to the electron transport layer.

[0022] In some embodiments, the light-absorbing layer includes a passivation material, the passivation material accounting for 0.05% to 5% of the mass of the light-absorbing layer.

[0023] In the technical solution of this application embodiment, the mass ratio of passivation material in the light absorption layer is within the above range, which can deepen the energy level on the upper surface of the light absorption layer, making the energy level matching degree between the light absorption layer and the electron transport layer better, and at the same time achieving a better passivation effect on the light absorption material of the light absorption layer, which is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0024] In some embodiments, the electron transport layer includes a passivation material, which accounts for 0.05% to 1% of the mass of the electron transport layer.

[0025] In the technical solution of this application embodiment, the mass ratio of passivation material in the electron transport layer is within the above range, which can deepen the energy level on the upper surface of the light absorption layer, making the energy level matching degree between the light absorption layer and the electron transport layer better, and at the same time achieving a better passivation effect on the light absorption layer, which is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0026] In some implementations, the electron transport layer comprises fullerenes and their derivatives.

[0027] In the technical solution of this application embodiment, the above-mentioned material is used as an electron transport layer, which has a good energy level matching degree, which is conducive to electron transport and improves the photoelectric conversion efficiency of solar cells.

[0028] In some implementations, the band gap of the light-absorbing layer ranges from 1.45 eV to 1.65 eV.

[0029] In the technical solution of this application embodiment, the band gap range of the light absorption layer is within the above-mentioned range. In combination with the passivation material provided in this application embodiment, the energy level matching degree between the light absorption layer and the electron transport layer is optimized, which is beneficial to improving the photoelectric conversion efficiency of the solar cell.

[0030] In some implementations, the light-absorbing layer comprises a perovskite material.

[0031] In the technical solution of this application embodiment, the light-absorbing layer includes a perovskite material, which has high photoelectric conversion efficiency, low preparation cost, and can be mass-produced using a solution method, thus helping to reduce the manufacturing cost of solar cells. The band gap of the perovskite material can be adjusted by changing the types and proportions of elements A, B, and X, thereby optimizing photoelectric performance and adapting to different application requirements.

[0032] The second technical solution adopted in this application is: to provide a photovoltaic device, including a solar cell of any one of the above.

[0033] Since the photovoltaic device of this application includes the solar cell provided in this application, it has at least the same advantages as the solar cell.

[0034] The third technical solution adopted in this application is to provide an electrical device including any of the above-mentioned solar cells.

[0035] Since the power-consuming device of this application includes the solar cell provided in this application, it has at least the same advantages as the solar cell.

[0036] The fourth technical solution adopted in this application is: to provide a power generation device including any of the above-mentioned solar cells.

[0037] Since the power generation device of this application includes the solar cell provided in this application, it has at least the same advantages as the solar cell.

[0038] The above description is merely an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, specific embodiments of this application are given below. Attached Figure Description

[0039] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0040] Figure 1 is a schematic diagram of the first structure of a solar cell provided in an embodiment of this application;

[0041] Figure 2 is a schematic diagram of the second structure of a solar cell provided in an embodiment of this application;

[0042] Figure 3 is a schematic diagram of the third structure of the solar cell provided in an embodiment of this application;

[0043] Figure 4 is a schematic diagram of the fourth structure of the solar cell provided in an embodiment of this application;

[0044] Figure 5 is a schematic diagram of the structure of the photovoltaic device provided in the embodiments of this application;

[0045] Figure 6 is a schematic diagram of the structure of the electrical device provided in an embodiment of this application;

[0046] Figure 7 is a schematic diagram of the structure of the power generation device provided in the embodiment of this application.

[0047] Marker explanation:

[0048] Solar cell 100, first electrode layer 101, light absorption layer 102, passivation layer 103, electron transport layer 104, second electrode layer 105, hole transport layer 106, photovoltaic device 1000, power consumption device 2000, power generation device 3000. Embodiments of the present invention

[0049] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0050] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0051] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0052] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0053] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0054] In perovskite solar cells, passivation materials are typically applied to the light-absorbing layer near the electron transport layer to passivate defects and modulate surface energy levels, thereby improving the photoelectric conversion efficiency. Phenethylamine iodide (PEAI) is one of the most commonly used passivation materials applied to the surface of the light-absorbing layer near the electron transport layer. However, PEAI increases the energy level on the surface of the light-absorbing layer, creating an additional barrier at the interface between the light-absorbing layer and the electron transport layer, which should normally transport electrons. Some current techniques use materials with deeper energy levels to dope PEAI, lowering the LUMO level on the light-absorbing layer / PEAI surface. However, this method may reduce the passivation effect of PEAI on the light-absorbing layer, and the uniformity of the doped mixture often leads to a decrease in the overall stability of the solar cell.

[0055] Therefore, referring to Figure 1 or Figure 2, this application provides a solar cell 100. The solar cell 100 includes a first electrode layer 101, a light absorption layer 102, a passivation layer 103, an electron transport layer 104, and a second electrode layer 105 stacked together. The light absorption layer 102 is located between the first electrode layer 101 and the passivation layer 103. The electron transport layer 104 is located on the side of the passivation layer 103 away from the light absorption layer 102. The second electrode layer 105 is located on the side of the electron transport layer 104 away from the passivation layer 103. The passivation layer 103... Including a passivation material; or, the solar cell 100 includes a first electrode layer 101, a light absorption layer 102, an electron transport layer 104, and a second electrode layer 105 stacked together, with the light absorption layer 102 and the electron transport layer 104 disposed between the first electrode layer 101 and the second electrode layer 105, and the light absorption layer 102 located between the first electrode layer 101 and the electron transport layer 104, wherein the light absorption layer 102 or the electron transport layer 104 includes a passivation material; wherein the passivation material includes cationic groups and anionic groups; the cationic groups include The Ar group includes one of the substituted or unsubstituted polycyclic rings; R1 includes a substituted or unsubstituted alkylene ring with a chain length of 1 to 10; R2, R3 and R4 each independently include H and one of the substituted or unsubstituted alkyl groups with a chain length of 1 to 4; the anionic group includes a halogen or halide-like anion.

[0056] In the technical solution of this application embodiment, a passivation layer 103 is disposed between the light absorption layer 102 and the electron transport layer 104, and the passivation layer 103 includes a passivation material; or, a passivation material is disposed in the light absorption layer 102 or the electron transport layer 104, that is, the passivation material is mixed and disposed in the light absorption layer 102 or the electron transport layer 104. The cationic groups in the passivation material include The Ar group includes one of the substituted or unsubstituted polycyclic rings, and the cationic group has a diimide structure. It is a strong electron acceptor with a strong electron-withdrawing ability. Its diimide structure forms a cationic group with the nitrogen cation, which also has electron-withdrawing ability. This allows for deeper energy levels in the passivation material itself. Using this passivation material as passivation layer 103, or mixing it into the light absorption layer 102 or electron transport layer 104, can deepen the energy levels on the upper surface of the light absorption layer 102, resulting in better energy level matching between the light absorption layer 102 and the electron transport layer 104, which is beneficial for improving the photoelectric conversion efficiency of the solar cell 100. The upper surface of the light absorption layer 102 is the side of the light absorption layer 102 closest to the electron transport layer 104. Furthermore, the anionic groups in this passivation material include halogen or halide-like anions. These anionic groups passivate surface defects in the light absorption layer 102, and the halogen or halide-like ions can fill vacancy defects on the surface of the light absorption layer 102, further improving the photoelectric conversion efficiency of the solar cell 100.

[0057] Among them, solar cell 100 refers to a device that directly converts light energy into electrical energy through the photovoltaic effect. Generally speaking, solar cell 100 includes first-generation solar cells represented by crystalline silicon solar cells, second-generation solar cells represented by thin-film solar cells made of direct bandgap semiconductors such as copper indium gallium selenide (CIGS), gallium arsenide (GaAs), and cadmium telluride (CdTe), and third-generation solar cells represented by dye-sensitized solar cells (DSSCs), organic photovoltaic cells (OPVs), and perovskite solar cells (PSCs).

[0058] Taking a single-junction perovskite solar cell as an example, the perovskite solar cell includes a first electrode layer 101, a light-absorbing layer 102, and a second electrode layer 105. At least one of the first electrode layer 101 and the second electrode layer 105 is a transparent electrode, allowing incident photons to pass through the transparent electrode and be absorbed by the light-absorbing layer 102. In some embodiments, one of the first electrode layer 101 and the second electrode layer 105 is a transparent electrode layer, and the other is a metal electrode layer. The metal electrode layer reduces the resistivity of the solar cell 100 and improves its efficiency. The light-absorbing layer 102 is a core component of the solar cell, its main function being to absorb solar energy and convert it into electrical energy. It should be noted that the single-junction perovskite solar cell provided above can be used alone or in devices such as perovskite-perovskite tandem cells, perovskite-crystalline silicon tandem cells, or perovskite-heterojunction tandem cells; this application does not limit its application.

[0059] Substitution is defined as the replacement of certain atoms or groups of atoms in an organic molecule by other atoms or groups of atoms through a chemical reaction, while unsubstituted refers to the state in which a certain atom or group of atoms is not replaced by other atoms or groups of atoms. Optionally, the substituent can be... , , , , , , The substituents can be cyclic, alkyl, such as C1-C5 alkyl, such as methyl, ethyl, isopropyl, etc., halogens such as F, Cl, Br, I, etc., and ether groups such as methyl ether group, diethyl ether group, etc.

[0060] Multi-membered rings can be classified into three-membered, four-membered, five-membered, six-membered, and seven-membered rings based on the number of atoms in the ring. Furthermore, multi-membered rings can be further divided into carbocyclic compounds and heterocyclic compounds. Carbocyclic compounds include cyclopropane and cyclohexene, while heterocyclic compounds contain other atoms such as oxygen, nitrogen, and sulfur as ring-forming atoms, such as furan, thiazole, and pyridine.

[0061] Halogen anions include F - I - ,Br - Cl - One or more of the following, halide-like anions include SCN. - CNO - OCN - OSCN - SH - CN - SeCN - BF4 - PF6 - One or more of them.

[0062] The passivation material provided in this application embodiment is detected and analyzed by nuclear magnetic resonance mass spectrometry. The reverse testing method is as follows: the functional layer of the battery is scraped off, dispersed in an IPA (isopropanol) solution and stirred for 2 hours, filtered, the solution is taken, and rotary evaporated to obtain powder. The powder is detected and analyzed by FTIR (Fourier Transform Infrared Spectrometry) and nuclear magnetic resonance mass spectrometry to detect the characteristic peaks of the diimide structure.

[0063] In some embodiments, the Ar group comprises a substituted or unsubstituted polycyclic ring with a cyclic number of 5 to 8 atoms.

[0064] In the technical solution of this application embodiment, the Ar group is selected from the above-mentioned polycyclic rings. Combined with the diimide structure and the nitrogen cation, it can achieve deeper energy levels in the passivation material itself. Using this passivation material as the passivation layer 103, or mixing this passivation material into the light absorption layer 102 or the electron transport layer 104, can deepen the energy levels on the upper surface of the light absorption layer 102, resulting in better energy level matching between the light absorption layer 102 and the electron transport layer 104, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100. The upper surface of the light absorption layer is the side of the light absorption layer closest to the electron transport layer.

[0065] In some embodiments, the Ar group includes one of a substituted or unsubstituted aromatic group or an aromatic heterocyclic group.

[0066] In the technical solution of this application embodiment, the Ar group includes one of substituted or unsubstituted aromatic groups or aromatic heterocyclic groups, providing a conjugated group in the passivation material, promoting the electron-withdrawing ability of the diimide structure, and achieving a deeper energy level in the passivation material itself. Using this passivation material as passivation layer 103, or mixing this passivation material in the light absorption layer 102 or electron transport layer 104, can deepen the energy level on the upper surface of the light absorption layer 102, resulting in better energy level matching between the light absorption layer 102 and the electron transport layer 104, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100. The upper surface of the light absorption layer is the side of the light absorption layer closest to the electron transport layer.

[0067] In some embodiments, the Ar group includes one of benzene ring and thiophene.

[0068] In the technical solution of this application embodiment, the Ar group is selected from the above-mentioned groups to provide conjugated groups in the passivation material, promote the electron-withdrawing ability of the diimide structure, and realize a deeper energy level of the passivation material itself. This passivation material is used as the passivation layer 103, or this passivation material is mixed and disposed in the light absorption layer 102 or the electron transport layer 104, which can deepen the energy level of the upper surface of the light absorption layer 102, so that the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 is better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0069] In some embodiments, R1 comprises a substituted or unsubstituted alkylene group with a chain length of 2 to 4. In the technical solutions of this application, R1 is selected from substituted or unsubstituted alkylene groups with a chain length of 2 to 4, which can regulate the spatial structure of the passivation material and is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0070] In some embodiments, R2, R3, and R4 each independently include H, or substituted or unsubstituted alkyl groups with a chain length of 1 to 2. In the technical solutions of this application, R2, R3, and R4 are selected from the above-mentioned groups, which can regulate the spatial structure of the passivation material and is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0071] In some embodiments, the anionic group includes I - ,Br - Cl - At least one of them.

[0072] In the technical solution of this application embodiment, the anionic group is selected from the above-mentioned halogens, which are easier to connect with the cationic groups and facilitate subsequent process preparation; moreover, the steric hindrance of halogens is low, which is conducive to forming a passivation material with the cationic groups. At the same time, the above-mentioned anionic groups play a role in passivating the surface defects of the light absorption layer 102, and the halide ions can fill the vacancy defects on the surface of the light absorption layer 102, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0073] In some embodiments, the passivating material includes , , , and At least one of them.

[0074] In the technical solution of this application embodiment, the passivation material selected from the above-mentioned range has a diimide structure. The diimide structure is a strong electron acceptor and has a strong electron-withdrawing ability. The diimide structure and the nitrogen cation, which also has an electron-withdrawing ability, form a cationic group. This allows for deeper energy levels in the passivation material itself. Using this passivation material as passivation layer 103, or mixing it into the light absorption layer 102 or electron transport layer 104, can deepen the energy levels on the upper surface of the light absorption layer 102, resulting in better energy level matching between the light absorption layer 102 and the electron transport layer 104, which is beneficial for improving the photoelectric conversion efficiency of the solar cell 100. Specifically, the upper surface of the light absorption layer 102 is the side closest to the electron transport layer 104. Furthermore, the anionic groups in this passivation material passivate surface defects in the light absorption layer 102, and halide ions or halide-like ions can fill vacancy defects on the surface of the light absorption layer 102, further improving the photoelectric conversion efficiency of the solar cell 100.

[0075] In some embodiments, the thickness of the passivation layer 103 is 1 nm to 20 nm.

[0076] The thickness of the passivation layer 103 refers to the average vertical distance between the surface of the passivation layer 103 near the light absorption layer 102 and the surface of the passivation layer 103 away from the light absorption layer 102. The thickness of the passivation layer 103 is tested by measuring the average thickness of the calibrated thickness using a high-resolution scanning electron microscope cross-section.

[0077] In the technical solution of this application embodiment, the thickness of the passivation layer 103 is within the above range. The passivation material in the passivation layer 103 can deepen the energy level on the upper surface of the light absorption layer 102, so that the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 is better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0078] The thickness of the passivation layer 103 can be 1nm, 1.5nm, 2nm, 5nm, 8nm, 10nm, 12.5nm, 15nm, 17nm, 20nm, or any range of two of the above values, such as 1nm~5nm, 5nm~10nm, 10nm~12.5nm, 12.5nm~20nm, 5nm~10nm, 15nm~17nm, etc.

[0079] In some embodiments, the light absorption layer 102 includes a passivation material, and the passivation material accounts for 0.05% to 5% of the mass of the light absorption layer 102.

[0080] In the technical solution of this application embodiment, the mass ratio of passivation material in the light absorption layer 102 is within the above range, which can deepen the energy level on the upper surface of the light absorption layer 102, making the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0081] The mass percentage of the passivation material in the light absorption layer 102 can be 0.05%, 0.1%, 0.25%, 0.5%, 1%, 2.5%, 2.8%, 3.5%, 4.2%, 5%, or any range of two of the above values, such as 0.05%~1%, 1%~3.5%, 3.5%~5%, 0.25%~2.5%, 0.5%~4.2%, etc.

[0082] In some embodiments, the thickness of the light-absorbing layer 102 is 100 nm to 1500 nm.

[0083] The thickness of the light absorption layer 102 refers to the average vertical distance between the surface of the light absorption layer 102 near the first electrode layer 101 and the surface of the light absorption layer 102 away from the first electrode layer 101. The thickness of the light absorption layer 102 is measured by cross-sectional measurement using a high-resolution scanning electron microscope to obtain the average thickness of the calibrated thickness.

[0084] In the technical solution of this application embodiment, the thickness of the light absorption layer 102 is within the above range, which is conducive to forming a matching energy level with the electron transport layer 104, and is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0085] The thickness of the light absorption layer 102 can be 100nm, 200nm, 400nm, 500nm, 550nm, 600nm, 800nm, 1000nm, 1200nm, 1500nm, etc., or it can be a range of any two of the above values, such as 100nm~500nm, 400nm~1000nm, etc.

[0086] In some embodiments, the electron transport layer 104 includes a passivation material, which accounts for 0.05% to 1% of the mass of the electron transport layer 104.

[0087] In the technical solution of this application embodiment, the passivation material has a mass ratio in the electron transport layer 104 within the above range, which can deepen the energy level on the upper surface of the light absorption layer 102, making the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0088] The mass percentage of passivation material in the electron transport layer 104 can be 0.05%, 0.1%, 0.2%, 0.25%, 0.3%, 0.38%, 0.5%, 0.6%, 0.75%, 0.8%, 0.85%, 0.9%, 0.96%, 1%, etc., or a range consisting of any two of the above values, such as 0.05%~0.38%, 0.38%~0.75%, 0.75%~1%, 0.5%~0.85%, 0.2%~0.6%, etc.

[0089] In some embodiments, the thickness of the electron transport layer 104 is 10~100 nm.

[0090] The thickness of the electron transport layer 104 refers to the average vertical distance between the surface of the electron transport layer 104 near the light absorption layer 102 and the surface of the electron transport layer 104 away from the light absorption layer 102. The thickness of the electron transport layer 104 is measured by cross-sectional measurement using a high-resolution scanning electron microscope to obtain the average thickness of the calibrated thickness.

[0091] In the technical solution of this application embodiment, the thickness of the electron transport layer 104 is within the above range, which is beneficial to forming a matching energy level with the light absorption layer 102, and is conducive to improving the photoelectric conversion efficiency of the solar cell 100.

[0092] The thickness of the electron transport layer 104 can be 10nm, 20nm, 40nm, 50nm, 55nm, 60nm, 70nm, 80nm, 100nm, etc., or it can be a range of any two of the above values, such as 10nm~50nm, 20nm~40nm, 40nm~100nm, etc.

[0093] In one embodiment, the electron transport layer 104 performs the function of extracting electrons and blocking holes. The electron transport layer 104 includes an electron transport material, which includes, but is not limited to, at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor oxides, titanates, and fluorides. The imide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. The quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthrenequinone, or anthraquinone. Fullerenes and their derivatives include methyl [6,6]-phenyl-C61-butyrate (PC... 61 BM), [6,6]-phenyl-C71-butyrate methyl ester (PC) 71 The metal oxide includes at least one of BM, fullerene C60 (C60), and fullerene C70 (C70). The metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr; for example, zinc oxide (ZnO) and tin dioxide (SnO2). The semiconductor material oxide includes silicon oxide. The titanate includes at least one of strontium titanate and calcium titanate. The fluoride includes at least one of lithium fluoride and calcium fluoride.

[0094] In the technical solution of this application embodiment, the above-mentioned material is used as the electron transport layer 104, which can form a matching energy level with the light absorption layer 102, which is beneficial to electron transport and improves the photoelectric conversion efficiency of the solar cell 100.

[0095] In some embodiments, the electron transport layer 104 comprises fullerenes and their derivatives, such as methyl [6,6]-phenyl-C61-butyrate (PC). 61 BM), [6,6]-phenyl-C71-butyrate methyl ester (PC) 71 One or more of the following: BM), fullerene C60 (C60), fullerene C70 (C70), etc. Optionally, the electron transport layer 104 includes methyl [6,6]-phenyl-C61-butyrate (PC). 61 BM) or [6,6]-phenyl-C71-butyrate methyl ester (PC) 71 BM).

[0096] In the technical solution of this application embodiment, the above-mentioned material is used as the electron transport layer 104, which can form a matched energy level with the light absorption layer 102. The energy level matching degree is good, which is conducive to electron transport and improves the photoelectric conversion efficiency of the solar cell 100.

[0097] In some embodiments, the band gap of the light-absorbing layer 102 is in the range of 1.45 to 1.65 eV.

[0098] In the technical solution of this application embodiment, the band gap range of the light absorption layer 102 is within the above-mentioned range. In combination with the passivation material provided in this application embodiment, the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 is optimized, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0099] In some embodiments, the light-absorbing layer 102 comprises a perovskite material.

[0100] In one embodiment, the perovskite material includes at least one of the compounds shown in [A][B][X]3 and [A]2[C][D][X]6, wherein A includes at least one inorganic or organic monovalent cation, B includes at least one inorganic divalent cation, C includes at least one inorganic monovalent cation, D includes at least one inorganic trivalent cation, and X includes at least one monovalent anion.

[0101] For example, organic monovalent cations include (NR1R2R3R4). + (R1R2N=CR3R4) + (R1R2N-C(R5)=NR3R4) + and (R1R2N-C(NR5R6)=NR3R4) + One or more of the following, wherein R1, R2, R3, R4, R5, and R6 are each independently selected from H, substituted or unsubstituted C1-C20 alkyl groups, or substituted or unsubstituted aryl groups. Optionally, the organic monovalent cation includes (H2N=CH-NH2)+ (abbreviated as FA), CH3NH3, etc. + (abbreviated as MA), one or more of the following: ethylamino, propylamino, butylamino, pentamino, hexamino, and imidazole.

[0102] For example, the inorganic monovalent cation includes: Li + Na + K + 、Rb + Cs + Cu + Ag + Au + or Hg + At least one of them.

[0103] For example, the inorganic divalent cation includes: Pb 2+ Sn 2+ Be 2+ Mg 2+ Ca 2+ 、Sr 2+ Ba 2+ Zn 2+ 、Ge 2+Fe 2+ Co 2+ Ni 2+ Cd 2+ Cu 2+ Mn 2+ Pd 2+ Yb 2+ Or Eu 2+ At least one of them.

[0104] For example, inorganic trivalent cations include: Bi 3+ Sb 3+ Cr 3+ Fe 3+ Co 3+ Ga 3+ As 3+ Ru 3+ ,Rh 3+ In 3+ Ir 3+ Ni 3+ Au 3+ Or Al 3+ At least one of them.

[0105] For example, monovalent anions include: F - Cl - ,Br - I - SCN - CNO - OCN - OSCN - SH - CN - SeCN - At least one of them.

[0106] In the technical solution of this application embodiment, the light absorption layer 102 includes the aforementioned perovskite material, which has high photoelectric conversion efficiency, low preparation cost, and can be mass-produced using a solution method, thus helping to reduce the manufacturing cost of the solar cell 100. The band gap of the perovskite material can be adjusted by changing the types and proportions of elements A, B, and X, thereby optimizing photoelectric performance and adapting to different application requirements. For example, the perovskite material includes FA... 0.9 Cs 0.1 PbI3.

[0107] In some embodiments, referring to FIG3, the solar cell 100 includes a first electrode layer 101, a hole transport layer 106, a light absorption layer 102, a passivation layer 103, an electron transport layer 104, and a second electrode layer 105.

[0108] The main function of the hole transport layer 106 is to promote the transport of photogenerated holes from the light absorption layer 102 to the first electrode layer 101, while blocking the reverse flow of electrons. Optionally, the hole transport layer 106 can be at least one of the following materials and their derivatives, or materials obtained by doping or passivation: nickel oxide, 2,2',7,7'-tetratetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoroformamidinium, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), [4-(3,6-dimethyl-9H-carbazole-9-yl] [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphoric acid (Me-4PACz), poly(3-hexylthiophene), triphenylamine with a triphenylene core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobisfluorene, polythiophene, phosphate monomolecule, carbazole monomolecule, sulfonic acid monomolecule, triphenylamine monomolecule, cuprous iodide and cuprous thiocyanate, or one or more of these.

[0109] In some embodiments, referring to FIG4, the solar cell 100 includes a first electrode layer 101, a hole transport layer 106, a light absorption layer 102, an electron transport layer 104, and a second electrode layer 105.

[0110] In the technical solution of this application embodiment, the solar cell 100 includes a reverse solar cell. By setting the passivation material used in this application as a passivation layer 103 or adding it to the light absorption layer 102 or the electron transport layer 104, the energy level on the upper surface of the light absorption layer 102 can be deepened, so that the energy level matching degree between the light absorption layer 102 and the electron transport layer 104 is better, which is beneficial to improving the photoelectric conversion efficiency of the solar cell 100.

[0111] In some embodiments, the solar cell 100 further includes a light-transmitting substrate located on the side of the first electrode layer 101 away from the light-absorbing layer 102 for supporting the solar cell. The substrate layer can be, but is not limited to, a glass substrate or a flexible substrate. In some embodiments, the material of the flexible substrate layer can be, for example (but not limited to), an organic polymer material, and further, can be one or more of the following materials mixed in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.

[0112] In some embodiments, the first electrode layer 101 includes, but is not limited to, one or more of the following materials: fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, and indium-doped zinc oxide.

[0113] The material of the second electrode layer 105 can be an organic, inorganic, or organic-inorganic conductive material. In some embodiments, the second electrode layer 105 may be one or more of the following materials, including but not limited to: Ag, Cu, C, Au, Al, fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, indium-doped zinc oxide, etc.

[0114] It should be noted that corresponding modification layers can be inserted between the layers. For example, a blocking layer can be inserted between the light absorption layer 102 and the hole transport layer 106, and / or between the light absorption layer 102 and the electron transport layer 104, to passivate defects in the light absorption layer 102 and further improve the performance of the solar cell 100. A hole blocking layer can be inserted on the side of the electron transport layer 104 away from the light absorption layer 102; materials may include copper bath (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, BCP), SnO2, etc.

[0115] This application also provides a method for preparing a solar cell 100, the method comprising:

[0116] A substrate having a first electrode layer 101 is provided.

[0117] A light-absorbing layer 102, a passivation layer 103, an electron transport layer 104, and a second electrode layer 105 are stacked on a first electrode layer 101. The light-absorbing layer 102 is located between the first electrode layer 101 and the passivation layer 103. The electron transport layer 104 is located on the side of the passivation layer 103 away from the light-absorbing layer 102. The second electrode layer 105 is located on the side of the electron transport layer 104 away from the passivation layer 103. The step of forming the passivation layer 103 includes: coating the side of the light-absorbing layer 102 away from the first electrode layer 101 with a passivation liquid, and then annealing to form the passivation layer 103. The passivation liquid includes a solvent and a passivating material. For example, the solvent includes isopropanol, etc.

[0118] Alternatively, a light-absorbing layer 102, an electron transport layer 104, and a second electrode layer 105 may be stacked on the first electrode layer 101, with the light-absorbing layer 102 and the electron transport layer 104 disposed between the first electrode layer 101 and the second electrode layer 105, and the light-absorbing layer 102 located between the first electrode layer 101 and the electron transport layer 104. The formation step of the light-absorbing layer 102 includes coating one side of the first electrode layer 101 with a mixed solution of a perovskite precursor liquid and a passivation liquid to form the light-absorbing layer 102. The passivation liquid includes a solvent and a passivating material. For example, the solvent may include isopropanol, etc.

[0119] Alternatively, a light absorption layer 102, an electron transport layer 104, and a second electrode layer 105 may be stacked on the first electrode layer 101, with the light absorption layer 102 and the electron transport layer 104 disposed between the first electrode layer 101 and the second electrode layer 105, and the light absorption layer 102 located between the first electrode layer 101 and the electron transport layer 104; wherein the step of forming the electron transport layer 104 includes: coating an electron transport layer precursor liquid on the side of the light absorption layer 102 away from the first electrode layer 101, and forming the electron transport layer 104 after annealing, wherein the electron transport layer precursor liquid includes an electron transport material and a passivation material.

[0120] The passivation material includes cationic and anionic groups; the cationic groups include The Ar group includes one of the substituted or unsubstituted polycyclic rings; R1 includes a substituted or unsubstituted alkylene ring with a chain length of 1 to 10; R2, R3 and R4 each independently include H and one of the substituted or unsubstituted alkyl groups with a chain length of 1 to 4; the anionic group includes a halogen or halide-like anion.

[0121] Referring to Figure 5, this application also provides a photovoltaic device 1000, including the solar cell 100 as described above.

[0122] Referring to Figure 6, this application also provides an electrical device 2000, including the solar cell 100 as described above.

[0123] In this application, the solar cell 100 serves as the power source for the aforementioned electrical device 2000; alternatively, the solar cell 100 can serve as an energy storage unit for the aforementioned electrical device 2000. As an example, the electrical device 2000 can be a lighting element, a display element, or an automobile, etc. The electrical device 2000 can be, but is not limited to, mobile phones, tablets, laptops, electric toys, power tools, electric vehicles, electric cars, ships, spacecraft, etc. Among these, electric toys can include stationary or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and spacecraft can include airplanes, rockets, space shuttles, and spacecraft, etc.

[0124] Referring to Figure 7, this application also provides a power generation device 3000, including the solar cell 100 as described above. The power generation device 3000 may include the solar cell 100 and an energy storage device, which may be a secondary battery.

[0125] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of this application clearer, the following will provide a more detailed description in conjunction with the embodiments and accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0126] The features and performance of this application will be further described in detail below with reference to the embodiments.

[0127] Example 1:

[0128] (1) Preparation of the first electrode layer: The cleaning rack containing FTO transparent conductive glass (thickness of 500 nm) was placed in an ultrasonic cleaner and cleaned with surfactant, deionized water, isopropanol and anhydrous ethanol for 20 min respectively. Finally, it was dried in an oven at 70 °C for 5 min. The conductive glass was then treated with an ultraviolet ozone (UVO) cleaner for 20 min under a fume hood and cooled to room temperature for later use.

[0129] (2) Preparation of hole transport layer: 3 mg of 4-(9H-aminobenzo(f)furan-9-yl)butyl)phosphoric acid (4PACz) was dispersed in 3 mL of isopropanol and shaken for 20 min until completely dissolved. 150 μL of the resulting dispersion was spin-coated onto the conductive surface of FTO transparent conductive glass at 4000 rpm for 25 s using a spin coater. After spin coating, the glass was placed on a hot plate and annealed at 120 °C for 20 min, then allowed to cool naturally to room temperature to obtain a hole transport layer with a thickness of 2 nm.

[0130] (3) Preparation of light absorption layer: Weigh 1.5 mol / L FA 0.9 Cs 0.1 PbI3 dissolves in N,N A perovskite precursor solution was obtained by mixing dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio 4:1). The solution was then shaken in the dark for 5 hours. After shaking, impurities in the precursor solution were removed using a 25 mm needle filter with a 0.22 μm mesh size. 150 μL of the perovskite precursor solution was spin-coated onto a hole transport layer at 2000 rpm for 20 s followed by 5000 rpm for 30 s. Ten seconds before the end of the spin-coating, 100 μL of chlorobenzene was rapidly added dropwise. After spin-coating, the solution was annealed at 100 °C for 20 min to obtain a FA layer with a thickness of 650 nm. 0.9 Cs 0.1 PbI3 perovskite light-absorbing layer.

[0131] (4) Passivation layer preparation: 1 mg Dissolve in 1 mL of IPA (isopropanol) and shake for 2 hours. Take 100 μL of... The solution was spin-coated onto the perovskite layer at a speed of 4000 rpm for 30 seconds, and then annealed at 100°C for 10 minutes to form an upper passivation layer with a thickness of 10 nm.

[0132] in, The preparation method is as follows: from CAS number 71824-24-3 It is formed by salting with HI (hydrogen iodide). The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0133] (5) Preparation of electron transport layer: 40 mg of PC 61 BM ([6,6]-phenyl-C61-butyrate methyl ester) was dissolved in 2 mL of chlorobenzene to prepare 2 mL of PC with a concentration of 20 mg / mL. 61 BM chlorobenzene solution. Take 90 μL of PC. 61 The BM solution was spin-coated onto the perovskite light-absorbing layer at a speed of 4000 rpm for 30 s, and then annealed at 100 °C for 10 min to form an electron transport layer with a thickness of 30 nm on the perovskite light-absorbing layer.

[0134] (6) Hole blocking layer preparation: A SnO2 hole blocking layer with a thickness of 30 nm was prepared on the electron transport layer by atomic layer deposition.

[0135] (7) Preparation of the second electrode layer: A copper (Cu) metal layer with a thickness of 140 nm was deposited as the electrode. Before deposition, a vacuum of 1.0 × 10⁻⁶ was first applied. -4 Pa, then pre-deposited for 5 minutes. During the deposition process, when the copper thickness is in the range of 0~20nm, the Cu evaporation rate is approximately 0.5A / s; when the copper thickness is in the range of 20nm~140nm, the Cu evaporation rate is approximately 5A / s.

[0136] Example 2

[0137] Similar to Example 1, the difference is:

[0138] The passivation layer preparation in step (4) of Example 1 is adjusted to: forming an upper passivation layer with a thickness of 1 nm.

[0139] Example 3

[0140] Similar to Example 1, the difference is:

[0141] The passivation layer preparation in step (4) of Example 1 is adjusted to: forming an upper passivation layer with a thickness of 20 nm.

[0142] Example 4

[0143] Similar to Example 1, the difference is:

[0144] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0145] in, The preparation method is as follows: [The following text appears to be a separate, unrelated sentence: "from CAS number 1871895-39-4"] It is formed by salting with HI. The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0146] Example 5

[0147] Similar to Example 1, the difference is:

[0148] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0149] in, The preparation method is as follows: [The following text appears to be a separate, unrelated sentence: "from CAS number 71824-24-3"] It is formed by salting with HBr (hydrogen bromide). The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HBr is added... Mix with HBr and stir at room temperature for 24 hours.

[0150] Example 6

[0151] Similar to Example 1, the difference is:

[0152] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0153] in, The preparation method is as follows: [The following text appears to be incomplete and requires further context: "CAS number 99008-43-2"] It is formed by salting with HI. The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0154] Example 7

[0155] Similar to Example 1, the difference is:

[0156] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0157] in, The preparation method is as follows: [The following text appears to be a separate, unrelated sentence: "from CAS number 697216-36-7"] It is formed by salting with HI. The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0158] Example 8

[0159] Similar to Example 1, the difference is:

[0160] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0161] in, The preparation method is as follows: [The following text appears to be a separate, unrelated sentence: "from CAS number 152294-81-0"] It is formed by salting with HI. The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0162] Example 9

[0163] Similar to Example 1, the difference is:

[0164] Step (4) is not set for passivation layer preparation.

[0165] Furthermore, the preparation of the light-absorbing layer in step (3) of Example 1 was adjusted as follows: 1.5 mol / L FA was weighed. 0.9 Cs 0.1 PbI3 dissolves in N,N A perovskite precursor solution was obtained by mixing dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (DMF to DMSO volume ratio of 4:1). 0.1% by mass of [unspecified ingredient] was then added to the perovskite precursor solution. A mixed solution of perovskite precursor solution and passivation solution was obtained. The solution was then shaken in the dark for 5 hours. After shaking, impurities in the precursor solution were removed using a filter head (25 mm diameter needle filter, 0.22 μm mesh size). 150 μL of the perovskite precursor solution was spin-coated onto a hole transport layer at 2000 rpm for 20 s, followed by spin-coating at 5000 rpm for 30 s. Ten seconds before the end of spin-coating, 100 μL of chlorobenzene was rapidly added dropwise. After spin-coating, the solution was annealed at 100 °C for 20 min to obtain a FA layer with a thickness of 650 nm. 0.9 Cs 0.1 PbI3 perovskite light-absorbing layer.

[0166] Example 10

[0167] Similar to Example 1, the difference is:

[0168] Step (4) is not set for passivation layer preparation.

[0169] Furthermore, step (5) of Example 1, the preparation of the electron transport layer, was adjusted to: 40 mg of PC 61 BM ([6,6]-phenyl-C61-butyrate methyl ester) was dissolved in 2 mL of chlorobenzene to prepare 2 mL of PC with a concentration of 20 mg / mL. 61 BM chlorobenzene solution. In PC 61 Add 0.05% by mass to BM chlorobenzene solution. The electron transport layer precursor solution was obtained. 90 μL of the electron transport layer precursor solution was spin-coated onto the perovskite light-absorbing layer at a speed of 4000 rpm for 30 s and annealed at 100 °C for 10 min to form an electron transport layer with a thickness of 30 nm on the perovskite light-absorbing layer.

[0170] Comparative Example 1

[0171] Similar to Example 1, the difference is:

[0172] The passivation layer preparation in step (4) of Example 1 is adjusted as follows: Change to .

[0173] in, The preparation method is as follows: [The following text appears to be incomplete and requires further context: "CAS number 64-04-0"] It is formed by salting with HI. The salting method is a common approach: in IPA (isopropanol) solvent, a 1:1 molar ratio of HI is added... Mix with HI and stir at room temperature for 24 hours.

[0174] Comparative Example 2

[0175] Similar to Example 1, the difference is that the passivation layer in step (4) is not set.

[0176] The solar cells 1 to 10 obtained from Examples 1 to 7, Comparative Examples 1 and 2 were tested for battery performance, and the results are shown in Table 1.

[0177] Furthermore, the LUMO of each conduction band layer of different solar cells was tested, with the specific settings as follows:

[0178] Sample 1

[0179] Following the same steps (1), (2), and (3) as in Example 1, after obtaining the light absorption layer in step (3), the light absorption layer was subjected to conduction band LUMO testing, and the results are shown in Table 2.

[0180] Sample 2

[0181] Following steps (1), (2), (3) and (5) of Comparative Example 2, after obtaining the electron transport layer in step (5), the conduction band LUMO test of the electron transport layer was performed, and the results are shown in Table 2.

[0182] Sample 3

[0183] Similar to steps (1), (2), (3), and (4) of Example 1, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0184] Sample 4

[0185] Similar to steps (1), (2), (3), and (4) of Example 4, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0186] Sample 5

[0187] Similar to steps (1), (2), (3), and (4) of Example 5, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0188] Sample 6

[0189] Similar to steps (1), (2), (3), and (4) of Example 6, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0190] Sample 7

[0191] Similar to steps (1), (2), (3), and (4) of Example 7, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0192] Sample 8

[0193] Similar to steps (1), (2), (3), and (4) of Example 8, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0194] Sample 9

[0195] Similar to steps (1), (2), (3), and (4) of Comparative Example 1, step (4) yields a product containing... After the passivation layer was applied, conduction band LUMO testing was performed, and the results are shown in Table 2.

[0196] 1. Photoelectric conversion efficiency test method:

[0197] Under standard simulated sunlight (AM1.5G, 100mW / cm²) 2 Under irradiation, battery performance is tested to obtain the IV curve. Based on the IV curve and data from the testing equipment, the short-circuit current Jsc (unit: mA / cm²) can be calculated. 2 The open-circuit voltage Voc (in V), maximum light output current Jmpp (in mA), and maximum light output voltage Vmpp (in V) are given. The fill factor FF (in %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The photoelectric conversion efficiency PCE (in %) is calculated using the formula PCE = Jsc × Voc × FF / Pw. Pw represents the input power (in mW).

[0198] 2. Test methods for CB or LUMO

[0199] Samples such as the first electrode layer / hole transport layer / light absorption layer, the first electrode layer / hole transport layer / light absorption layer / electron transport layer, and the first electrode layer / hole transport layer / light absorption layer / passivation layer were prepared. The surface energy levels of the samples were measured using ultraviolet photoelectron spectroscopy. A He lamp light source (21.2 eV) was used to select a point on the sample surface for valence band spectrum measurement to obtain VB or HOMO. The absorption cutoff edge of each layer was measured based on ultraviolet-visible light, and the band gap was calculated. Finally, CB or LUMO was calculated.

[0200] 3. Test methods for film thickness

[0201] The average thickness of each calibrated layer was obtained by cross-sectional testing using a high-resolution scanning electron microscope.

[0202] Table 1 Performance test results of solar cells in each embodiment and comparative example

[0203]

[0204] Table 2. Conduction band energy level test results for each sample

[0205]

[0206] As can be seen from the relevant data in Table 1, by comparing Examples 1-10 with Comparative Example 2, the passivation material provided in the embodiments of this application, whether the passivation material is formed as a single layer or doped in the light absorption layer or electron transport layer, can achieve a better energy level matching effect, which is beneficial to improving the photoelectric conversion efficiency of solar cells. By comparing Examples 1, 4-8 with Comparative Example 1, the passivation material provided in the embodiments of this application has a better energy level matching effect than the passivation material of Comparative Example 1, which is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0207] Meanwhile, as can be seen from the relevant data in Table 2, Sample 2 did not have a passivation layer, and the energy level difference between the electron transport layer of Sample 2 and the light absorption layer of Sample 1 was relatively large, at 0.3 eV; after Samples 3-8 used the passivation material provided in the embodiments of this application to prepare passivation layers, the passivation layers were located between the light absorption layer and the electron transport layer, the energy level of the passivation layer was less than or equal to 0.1 eV from the light absorption layer energy level of Sample 1, and the energy difference between the passivation layer energy level and the electron transport layer energy level of Sample 2 was less than or equal to 0.3 eV; Sample 9 used As a passivation material, the passivation layer energy level of sample 9 has a large difference of 0.4 eV from the electron transport layer energy level of sample 2.

[0208] Tables 1 and 2 illustrate that the passivation material provided in this application can improve the energy level matching between the light absorption layer and the electron transport layer, and make the energy level difference between the light absorption layer and the electron transport layer closer, which is beneficial to improving the photoelectric conversion efficiency of solar cells.

[0209] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A solar cell, wherein, The solar cell includes a first electrode layer, a light-absorbing layer, a passivation layer, an electron transport layer, and a second electrode layer stacked together. The light-absorbing layer is located between the first electrode layer and the passivation layer. The electron transport layer is located on the side of the passivation layer away from the light-absorbing layer. The second electrode layer is located on the side of the electron transport layer away from the passivation layer. The passivation layer includes a passivation material. Alternatively, the solar cell includes a first electrode layer, a light-absorbing layer, an electron transport layer, and a second electrode layer stacked together. The light-absorbing layer and the electron transport layer are disposed between the first electrode layer and the second electrode layer. The light-absorbing layer is located between the first electrode layer and the electron transport layer. The light-absorbing layer or the electron transport layer includes a passivation material. wherein the passivation material comprises cationic groups and anionic groups; the cationic groups comprise The Ar group includes one of the substituted or unsubstituted polycyclic rings; R1 includes a substituted or unsubstituted alkylene group with a chain length of 1 to 10; R2, R3 and R4 each independently include one of H and a substituted or unsubstituted alkyl group with a chain length of 1 to 4; the anionic group includes a halogen or halide-like anion.

2. The solar cell as claimed in claim 1, wherein, The Ar group comprises 5 to 8 cyclic atoms of substituted or unsubstituted polycyclic rings.

3. The solar cell according to claim 1 or 2, wherein, The Ar group includes one of substituted or unsubstituted aromatic groups or aromatic heterocyclic groups.

4. The solar cell according to any one of claims 1 to 3, wherein, The Ar group includes one of benzene ring and thiophene.

5. The solar cell according to any one of claims 1 to 4, wherein, The anionic group comprises at least one of I - , Br - , Cl - .

6. The solar cell according to any one of claims 1 to 5, wherein, The passivation material includes , , , and At least one of them.

7. The solar cell according to any one of claims 1 to 6, wherein, The thickness of the passivation layer is 1 nm to 20 nm.

8. The solar cell according to any one of claims 1 to 6, wherein, The light-absorbing layer includes the passivation material, and the passivation material accounts for 0.05% to 5% of the mass of the light-absorbing layer.

9. The solar cell according to any one of claims 1 to 6, wherein, The electron transport layer includes the passivation material, and the passivation material accounts for 0.05% to 1% of the mass of the electron transport layer.

10. The solar cell according to any one of claims 1 to 9, wherein, The electron transport layer includes fullerenes and their derivatives.

11. The solar cell according to any one of claims 1 to 10, wherein, The band gap of the light absorption layer is in the range of 1.45eV to 1.65eV.

12. The solar cell according to any one of claims 1 to 11, wherein, The light-absorbing layer comprises a perovskite material.

13. A photovoltaic device, wherein, Including the solar cell as described in any one of claims 1 to 12.

14. An electrical appliance, wherein, It includes the solar cell as described in any one of claims 1 to 12 or the photovoltaic device as described in claim 13.

15. A power generation device, wherein, It includes the solar cell as described in any one of claims 1 to 12 or the photovoltaic device as described in claim 13.

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