Mask topology-based charge state influencing
By directing a particle beam based on material distribution to influence the charge state of lithographic masks, the method optimizes charge control, reducing electrostatic issues and improving throughput in mask analysis and processing.
WO2026114909A1PCT designated stage Publication Date: 2026-06-04CARL ZEISS SMT GMBH
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- CARL ZEISS SMT GMBH
- Filing Date
- 2025-11-26
- Publication Date
- 2026-06-04
Smart Images
Figure EP2025084276_04062026_PF_FP_ABST
Abstract
A first aspect relates to a computer-implemented method for influencing a charge state of a lithographic mask. The computer-implemented method comprises selecting a region of the mask based on a material distribution of the region of the mask. The method furthermore comprises directing a particle beam onto the region of the mask in order to influence the charge state of the mask.
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