Metallized film, film capacitor, inverter, and vehicle

Abstract

The purpose of the present invention is to provide a metallized film capable of improving the withstand voltage of a film capacitor. This metallized film (100E) comprises a dielectric film (110E), a plurality of electrode parts (120E), and a fuse part (130E). The plurality of electrode parts (120E) are disposed on one or both surfaces of the dielectric film (110E) with a margin part (140E) therebetween. Among the plurality of electrode parts (120E), the fuse part (130E) connects two electrode parts (120E) that are adjacent to each other with the margin part (140E) therebetween. Each of the plurality of electrode parts (120E) and the fuse part (130E) has a metal oxide layer (150E) and a metal layer (160E) that are arranged in the thickness direction of the dielectric film (110E).

Description

Metallized film, film capacitor, inverter, and vehicle

[0001] The present disclosure generally relates to a metallized film, a film capacitor, an inverter, and a vehicle, and more particularly to a metallized film including a dielectric film, a film capacitor, an inverter, and a vehicle.

[0002] Patent Document 1 discloses a polyphenylene sulfide film characterized in that a ceramic layer is provided on at least one side. The ceramic layer is heat-resistant aluminum oxide, silicon oxide, indium oxide, zinc oxide, titanium oxide, or a composite thereof. The polyphenylene sulfide film has a metal conductive layer having a patterned shape laminated on the surface of the ceramic layer.

[0003] However, in the polyphenylene sulfide film of Patent Document 1, a metal conductive layer having a patterned shape is laminated on the surface of the ceramic layer. That is, the ceramic layer is formed over the entire one side of the polyphenylene sulfide film, and the margin portion (non-conductive portion) is formed depending on the presence or absence of the metal conductive layer. In the case of a multilayer capacitor using such a film, although the withstand voltage property is improved, there is a possibility that the leakage current cannot be reduced. That is, in the polyphenylene sulfide film of Patent Document 1, there is a problem that it is difficult to manufacture a film capacitor that achieves both excellent withstand voltage property and reduction of leakage current.

[0004] Patent Document 2 discloses a metallized plastic film capacitor. In this metallized plastic film capacitor, the capacitor element is configured by winding a film around the outer periphery of a wound body in which a pair of metallized plastic films are wound.

[0005] In the above metallized plastic film, an electrode having a low-resistance portion and a high-resistance portion is formed of zinc on one surface of the polypropylene film. Further, a metal oxide insulating layer is formed on the other surface of the polypropylene film.

[0006] However, in the metallized plastic film capacitor described in Patent Document 2, when winding a pair of metallized plastic films, the low-resistance portion of the electrode and the metal oxide insulating layer may press against each other, potentially causing cracks in the metal oxide insulating layer. Furthermore, these cracks may lead to a decrease in withstand voltage.

[0007] Patent Document 3 discloses a metallized film capacitor comprising a pair of metallized films, each having a metal-deposited electrode formed on a dielectric film, an element formed by overlapping and winding the metal-deposited electrodes so that they face each other via the dielectric film, and a pair of metallicon electrodes formed on both end faces of the element by thermal spraying. In this metallized film capacitor, an insulating margin consisting of a non-metallic deposition portion is continuously provided in the longitudinal direction on one end of the dielectric film in the width direction, a metal-deposited electrode is formed in the portion excluding this insulating margin, and a protective film consisting of a silicon oxide film or silicon dioxide film containing 2 to 50 volume percent of hydrogen is formed on the metal-deposited electrode.

[0008] There is a need to improve the voltage resistance of metallized film capacitors as described above.

[0009] Japanese Patent Publication No. 2004-090551, Japanese Patent Publication No. Sho 61-194813, Japanese Patent Publication No. 2010-62410

[0010] The purpose of this disclosure is to provide a metallized film, a film capacitor, an inverter, and a vehicle that can improve the voltage withstand capability of film capacitors.

[0011] A metallized film according to one aspect of the present disclosure comprises a dielectric film, a plurality of electrode portions, and a fuse portion. The plurality of electrode portions are arranged on one or both sides of the dielectric film via margin portions. The fuse portion connects two adjacent electrode portions of the plurality of electrode portions via the margin portions. Each of the plurality of electrode portions and the fuse portion has a metal oxide layer and a metal layer aligned in the thickness direction of the dielectric film.

[0012] A film capacitor according to one aspect of the present disclosure comprises the metallized film.

[0013] An inverter according to one aspect of the present disclosure includes the film capacitor.

[0014] A vehicle according to one aspect of this disclosure is equipped with the inverter.

[0015] A film capacitor according to one aspect of the present disclosure comprises: a first metallized film having a first oxide film and a first metal film provided in this order on the first surface of a first dielectric film; a second metallized film having a second metal film provided on the second surface of a second dielectric film and a second oxide film provided on the second back surface opposite to the second surface; a first electrode connected to the first metal film; and a second electrode connected to the second metal film. The first metal film and the second oxide film face each other. The first metal film has a first thick film portion connected to the first electrode and a first thin film portion connected to the first thick film portion and having a smaller thickness than the first thick film portion. At least a portion of the second oxide film whose thickness is opposite to the first thick film portion has a thickness smaller than the thickness of the portion whose thickness is not opposite to the first thick film portion.

[0016] A film capacitor according to one aspect of the present disclosure comprises: a first metallized film having a first oxide film and a first metal film provided in this order on a first surface of a first dielectric film; a second metallized film having a second metal film provided on a second surface of a second dielectric film and a second oxide film provided on a second back surface opposite to the second surface; a first electrode connected to the first metal film; and a second electrode connected to the second metal film. The first metal film and the second oxide film face each other. The first metal film has a first thick film portion connected to the first electrode and a first thin film portion connected to the first thick film portion and having a smaller thickness than the first thick film portion. At least a portion of the first thick film portion does not face the second oxide film.

[0017] An inverter according to one aspect of the present disclosure includes the film capacitor.

[0018] A vehicle according to one aspect of this disclosure is equipped with the inverter.

[0019] A metallized film according to one aspect of the present disclosure comprises a dielectric film having a width direction, a surface oxide film provided on the surface of the dielectric film, a metal film provided on the surface oxide film, and a back oxide film provided on the back surface of the dielectric film. The metal film has a thick film portion provided at one end in the width direction and a thin film portion connected to the thick film portion and having a smaller thickness than the thick film portion. The thickness of the portion of the back oxide film located at the other end in the width direction is smaller than the thickness of the portion located at any other end in the width direction.

[0020] A metallized film according to one aspect of the present disclosure comprises a dielectric film having a width direction, a surface oxide film provided on the surface of the dielectric film, a metal film provided on the surface oxide film, and a back oxide film provided on the back surface of the dielectric film. The metal film has a thick film portion provided at one end in the width direction and a thin film portion connected to the thick film portion and having a smaller thickness than the thick film portion. The back oxide film is not provided at the other end of the dielectric film in the width direction.

[0021] A metallized film according to one aspect of the present disclosure comprises a dielectric film, a first metal oxide layer disposed on a first surface of the dielectric film, a metal layer disposed on the first metal oxide layer, and a second metal oxide layer disposed on the metal layer. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0022] A metallized film according to one aspect of the present disclosure comprises a dielectric film, a first metal oxide layer disposed on a first surface of the dielectric film, a metal layer disposed on the metal oxide layer, and a second metal oxide layer disposed on a second surface of the dielectric film. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0023] A film capacitor according to one aspect of the present disclosure includes a pair of metallized films. The metallized film comprises a dielectric film, a first metal oxide layer disposed on a first surface of the dielectric film, a metal layer disposed on the first metal oxide layer, and a second metal oxide layer disposed on the metal layer. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0024] A film capacitor according to one aspect of the present disclosure includes a pair of metallized films. The metallized film comprises a dielectric film, a first metal oxide layer disposed on a first surface of the dielectric film, a metal layer disposed on the first metal oxide layer, and a second metal oxide layer disposed on a second surface of the dielectric film. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0025] A film capacitor according to one aspect of the present disclosure includes a first metallized film comprising a first dielectric film, a first metal oxide layer disposed on a first surface of the first dielectric film, and a first metal layer disposed on the first metal oxide layer, and a second metallized film comprising a second dielectric film, a second metal layer disposed on a third surface of the second dielectric film, and a second metal oxide layer disposed on a fourth surface of the second dielectric film. The first metal layer and the second metal oxide layer face each other. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0026] A film capacitor according to one aspect of the present disclosure includes a metallized film comprising a first dielectric film, a first metal oxide layer disposed on a first surface of the first dielectric film, a first metal layer disposed on the first metal oxide layer, and a second metal layer disposed on a second surface of the first dielectric film, and an insulating film comprising a second dielectric film and a second metal oxide layer disposed on a fourth surface of the second dielectric film. The first metal layer and the second metal oxide layer face each other. The thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

[0027] An inverter according to one aspect of the present disclosure includes the film capacitor.

[0028] A vehicle according to one aspect of this disclosure is equipped with the inverter.

[0029] Figure 1 is a schematic plan view showing a metallized film according to the first disclosure. Figure 2 is an enlarged plan view of a metallized film according to the first embodiment of the first disclosure. Figure 3 is an enlarged plan view of a metallized film according to the second embodiment of the first disclosure. Figure 4 is an enlarged plan view of a metallized film according to the third embodiment of the first disclosure. Figure 5 is a cross-sectional view taken along line 5-5 of Figure 2. Figure 6 is a cross-sectional view taken along line 6-6 of Figure 2. Figure 7 is a cross-sectional view taken along line 7-7 of Figure 3. Figure 8 is a cross-sectional view taken along line 8-8 of Figure 3. Figure 9 is a cross-sectional view taken along line 9-9 of Figure 4. Figure 10 is a cross-sectional view taken along line 10-10 of Figure 4. Figure 11 is a schematic cross-sectional view showing a film capacitor according to the first embodiment of the second disclosure. Figure 12 is a schematic cross-sectional view showing a first modified example of the second disclosure. Figure 13 is a schematic cross-sectional view showing a second modified example of the second disclosure. Figure 14 is a schematic cross-sectional view showing a third modified example of the second disclosure. Figure 15 is a schematic cross-sectional view showing a film capacitor according to the second embodiment of the second disclosure. Figure 16 is a schematic cross-sectional view showing a fourth modification of the second disclosure. Figure 17 is a schematic cross-sectional view showing a fifth modification of the second disclosure. Figure 18 is a schematic cross-sectional view showing a sixth modification of the second disclosure. Figure 19 is a schematic cross-sectional view showing a metallized film used in the manufacture of a film capacitor according to the first embodiment of the second disclosure. Figure 20 is a schematic cross-sectional view showing a metallized film used in the manufacture of a film capacitor according to the second embodiment of the second disclosure. Figure 21 is a perspective view showing the manufacturing process of a winding used in a film capacitor. Figure 22 is a perspective view showing a film capacitor. Figure 23 is a block diagram showing an inverter. Figure 24 is a schematic configuration diagram showing a vehicle. Figure 25 is a schematic cross-sectional view of a film capacitor according to the first embodiment of the third disclosure. Figure 26 is a schematic cross-sectional view of a film capacitor according to the second embodiment of the third disclosure. Figure 27 is a schematic cross-sectional view of another example of a film capacitor according to the embodiment of the third disclosure. Figure 28 is a schematic cross-sectional view of another example of a film capacitor according to the embodiment of the third disclosure. Figure 29 is a schematic cross-sectional view of a film capacitor according to a modification of the third disclosure.

[0030] This disclosure includes disclosures 1 through 3. Disclosures 1 through 3 are described below in order.

[0031] I. First Disclosure First, I will explain the first disclosure.

[0032] 1. Overview The metallized film 100E according to the embodiment of the first disclosure comprises a dielectric film 110E, a plurality of electrode portions 120E, and a fuse portion 130E. The plurality of electrode portions 120E are arranged on one or both sides of the dielectric film 110E via margin portions 140E. The fuse portion 130E connects two adjacent electrode portions 120E via the margin portions 140E. The plurality of electrode portions 120E and the fuse portion 130E have metal oxide layers 150E and metal layers 160E aligned in the thickness direction of the dielectric film 110E.

[0033] As described above, the metallized film 100E comprises a plurality of electrode portions and a fuse portion 130E, and the plurality of electrode portions 120E and the fuse portion 130E have a metal oxide layer 150E and a metal layer 160E. When such metallized films 100E are laminated to produce a film capacitor (see Figures 21 and 22 described later), a metal oxide layer 150E is interposed between the metal layer 160E electrically connected to the negative electrode and the metal layer 160E electrically connected to the positive electrode. Here, the metal oxide layer 150E has a high energy barrier because it contains a metal oxide. In other words, it can suppress the movement of electrons emitted from the metal layer 160E electrically connected to the negative electrode toward the metal layer 160E electrically connected to the positive electrode. This can improve the voltage withstand capability of the film capacitor.

[0034] Furthermore, multiple electrode portions 120E are arranged via margin portions 140E on the dielectric film 110E, and the fuse portion 130E connects two adjacent electrode portions 120E via the margin portions 140E. In other words, there are no electrode portions 120E or fuse portions 130E in the margin portion 140E. That is, there are no metal oxide layers 150E or metal layers 160E in the margin portion 140E. Here, the metal oxide layer 150E has a lower surface resistance than the dielectric film 110E. Therefore, if a metal oxide layer is provided on the entire surface of one side of the dielectric film as in Patent Document 1, there is a risk that the leakage current will increase. On the other hand, the metallized film 100E of the first disclosure has a margin portion 140E on the dielectric film 110E where the metal oxide layer 150E is not provided, so the leakage current of a film capacitor manufactured using the metallized film 100E can be reduced.

[0035] With the above configuration, the metallized film 100E of the first disclosure is suitable as a material for manufacturing a film capacitor that achieves both improved voltage resistance and reduced leakage current.

[0036] 2. Details (1) First Embodiment (1.1) Metallized Film The metallized film 100E according to the first embodiment will be described with reference to Figures 1, 2, 5 and 6. Note that each figure is a schematic diagram, and the ratios of the size and thickness of each component in the figures do not necessarily reflect the actual dimensional ratios. Also, the arrows indicating directions in each figure are not intended to define the direction in which the metallized film 100E is used, but are merely there to make the explanation easier to understand and do not represent actual dimensions.

[0037] In Figures 1 to 10, the X, Y, and Z directions of the Cartesian coordinate system are defined. The X direction is the thickness direction of the metallized film 100E. The +X direction may be considered "down" and the -X direction "up". The Y direction is the longitudinal direction of the metallized film 100E. The +Y direction may be considered "front" and the -Y direction "back". The Z direction is the width direction of the metallized film 100E. The +Z direction may be considered "left" and the -Z direction "right".

[0038] (Structure) The metallized film 100E includes a dielectric film 110E, a plurality of electrode portions 120E, and a fuse portion 130E (see FIGS. 1 and 2). For example, the width of the metallized film 100E is 5 mm or more and 200 mm or less, and the thickness of the metallized film 100E is 1 μm or more and 10 μm or less.

[0039] <Dielectric Film> The dielectric film 110E has a constant width in the Z direction, a constant thickness in the X direction, and extends in a long shape in the Y direction.

[0040] The dielectric film 110E is a film made of a dielectric. The dielectric is not particularly limited, and examples thereof include polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), polycarbonate (PC), polystyrene (PS), and the like.

[0041] The dielectric film 110E has an upper surface and a lower surface. The upper surface is the surface facing the -X direction. The lower surface is the surface on the opposite side of the upper surface. That is, the lower surface is the surface facing the +X direction.

[0042] The thickness of the dielectric film 110E is not particularly limited, and for example, it is 1 μm or more and 10 μm or less. Within the above range, it is easier to realize an improvement in withstand voltage.

[0043] <Electrode Portion and Fuse Portion> The electrode portion 120E and the fuse portion 130E are provided on the dielectric film 110E. In this embodiment, the electrode portion 120E and the fuse portion 130E are provided only on the upper surface of the dielectric film 110E.

[0044] Each of the electrode portion 120E and the fuse portion 130E has a metal oxide layer 150E and a metal layer 160E. The metal oxide layer 150E and the metal layer 160E are arranged side by side in the thickness direction of the dielectric film 110E, that is, in the X direction. The metal oxide layer 150E and the metal layer 160E are formed, for example, by vapor deposition. In this embodiment, the electrode portion 120E and the fuse portion 130E are arranged in the order of the metal oxide layer 150E and the metal layer 160E from the dielectric film 110E.

[0045] The material of the metal oxide layer 150E is preferably at least one metal oxide selected from the group consisting of aluminum (Al), silicon (Si), zirconium (Zr), titanium (Ti), barium (Ba), calcium (Ca), copper (Cu), etc. Among these, aluminum oxide (Al ｘ O ｙ ) is more preferably used, and among aluminum oxides, Al ２ O ３ is particularly preferably used. In this case, it becomes easier to achieve an improvement in withstand voltage.

[0046] The material of the metal layer 160E is not particularly limited, and examples thereof include aluminum (Al), gold (Au), magnesium (Mg), tin (Sn), nickel (Ni), chromium (Cr), iron (Fe), copper (Cu), titanium (Ti), and alloys containing these.

[0047] The thickness of the metal oxide layer 150E is, for example, 3 nm or more and 100 nm or less.

[0048] The thickness of the metal layer 160E is, for example, 3 nm or more and 50 nm or less.

[0049] In this embodiment, a plurality of electrode portions 120E are arranged via the margin portion 140E on the dielectric film 110E, and include a large electrode 121E and a plurality of small electrodes 122E in two or more rows (four rows in this embodiment). The number of rows of the small electrodes 122E is not particularly limited. Further, the large electrode 121E and the plurality of small electrodes 122E are electrically connected by the fuse portion 130E via the margin portion 140E.

[0050] <Large Electrode> The large electrode 121E has a constant width in the Z direction, a constant thickness in the X direction, and extends in the Y direction to form an elongated length. The width of the large electrode 121E is not particularly limited, but in this embodiment it covers approximately half the width of the right side of the dielectric film 110E. That is, the large electrode 121E extends from the right end of the dielectric film 110E to approximately the center in the Z direction. The right end of the large electrode 121E is the part that is electrically connected to the end face electrode of the film capacitor. That is, the metal oxide layer 150E and the metal layer 160E are exposed at the right end of the large electrode 121E.

[0051] <<Small Electrodes>> The small electrodes 122E are arranged in the Z direction relative to the large electrode 121E, and multiple small electrodes are formed in a row in the Y direction. In this embodiment, the multiple small electrodes 122E are located on the left side of the dielectric film 110E, with a margin portion 140E in between.

[0052] In this embodiment, the small electrode 122E is rectangular in shape. Two opposing sides of the small electrode 122E in the Z direction (left side and right side) and the remaining two sides in the Y direction (front side and back side) are parallel to each other. Furthermore, each of the small electrodes 122E in this embodiment is approximately the same shape and size.

[0053] The margin portion 140E consists of a large margin portion 141E and a small margin portion 142E. The large margin portion 141E extends from the left end of the dielectric film 110E, having a constant width in the Z direction and being elongated in the Y direction. Each of the small margin portions 142E exists between the electrode portions 120E and has a constant width in either the Z or Y direction. That is, each small electrode 122E exists between the large electrode 121E and the large margin portion 141E in the Z direction, and is further surrounded in both the Z and Y directions by the margin portion 140E.

[0054] The margin portion 140E is the portion on the dielectric film 110E where the electrode portion 120E and the fuse portion 130E are not formed. In other words, the metal oxide layer 150E and the metal layer 160E are absent on the dielectric film 110E in the margin portion 140E.

[0055] ≪Fuse Section≫ The fuse section 130E melts and evaporates when excessive power flows due to dielectric breakdown of the dielectric film 110E, etc. This restores the insulation properties of the film capacitor and maintains its function, thereby improving the safety and voltage resistance of the film capacitor.

[0056] Each of the multiple fuse sections 130E connects two adjacent electrode sections 120E via a margin section 140E. In this embodiment, each fuse section 130E extends from approximately the center of the left or right side of the small electrode 122E and connects adjacent large electrode 121E and small electrode 122E in the Z direction, or adjacent small electrodes 122E in the Z direction. Therefore, in this embodiment, adjacent small electrodes 122E in the Y direction are not connected.

[0057] Multiple fuse sections 130E have the same width in the Y direction. Because this width is smaller than that of the small electrode 122E, they are more likely to melt and evaporate when an excessive current flows, improving the safety of the film capacitor.

[0058] Regarding the surface adjacent to the margin portion: In this embodiment, as shown in Figures 5 and 6, the end face of the metal oxide layer 150E and the end face of the metal layer 160E are aligned on the surface S adjacent to the margin portion 140E of the electrode portion 120E and the fuse portion 130E.

[0059] In other words, the adjacent surface S is almost flat and extends almost perpendicularly in the -X direction with respect to the upper surface of the dielectric film 110E. Furthermore, in the enlarged plan view shown in Figure 2, the metal layer 160E, which is the upper layer of the electrode portion 120E and the fuse portion 130E, and the margin portion 140E on the dielectric film 110E are visible, while the metal oxide layer 150E is not visible.

[0060] (Manufacturing Method) The manufacturing method of the metallized film 100E according to this embodiment is not particularly limited, but can be carried out by, for example, depositing a metal oxide and a metal onto the dielectric film 110E.

[0061] Specifically, first, a pattern for the non-deposited areas is printed onto the dielectric film 110E using oil or the like. The non-deposited areas are the parts where metal oxide and metal are not deposited, and these become the margin areas 140E in the metallized film 100E according to this embodiment. Next, the metal oxide and metal are deposited onto the dielectric film 110E in that order. The metallized film 100E can be manufactured by following these steps.

[0062] Herein, the oil used for pattern printing on the non-deposited portion of the metallized film 100E according to this embodiment is not particularly limited, as long as it is not easily sublimated by the heat of deposition and has a suitable wettability to the dielectric film 110E and the metal oxide, neither too high nor too low. By pattern printing on the non-deposited portion with an oil having the above properties, a metallized film 100E can be obtained that is substantially flat without any steps at the boundary between the end face of the metal oxide layer 150E and the end face of the metal layer 160E, and has adjacent surfaces S that are substantially perpendicular to the thickness direction of the dielectric film 110E.

[0063] (1.2) Effects The metallized film 100E according to this embodiment has a metal oxide layer 150E and a metal layer 160E arranged on a dielectric film 110E in that order. That is, the metal oxide layer 150E is interposed between the dielectric film 110E and the metal layer 160E. Therefore, film capacitors manufactured using this metallized film 100E have improved dielectric strength, and thus dielectric breakdown can be suppressed.

[0064] Furthermore, the metallized film 100E according to this embodiment has a margin portion 140E where the metal oxide layer 150E and the metal layer 160E are absent. As a result, the leakage current of the film capacitor is reduced. This is presumed to be due to the following mechanism.

[0065] Between the dielectric film 110E and the metal oxide layer 150E, the metal oxide layer 150E has a lower surface resistance. Therefore, if the metal oxide layer 150E is also provided on the margin portion 140E of the dielectric film 110E, the leakage current increases compared to when nothing is provided. On the other hand, in this embodiment, the metallized film 100E does not have the metal oxide layer 150E and the metal layer 160E provided on the margin portion 140E of the dielectric film 110E. This makes it possible to reduce the leakage current between the electrode portions 120E.

[0066] (2) Second Embodiment (2.1) Metallized Film The metallized film 100E according to the second embodiment will be described with reference to Figures 1, 3, 7 and 8. Contents similar to those of the first embodiment will be omitted as appropriate.

[0067] (Structure) In this embodiment, the arrangement, material, and properties of the dielectric film 110E, electrode portion 120E, and fuse portion 130E are the same as in the first embodiment. However, there is a difference from the first embodiment in the surface S (adjacent surface S) adjacent to the margin portion 140E of the electrode portion 120E and fuse portion 130E. This difference will be explained below.

[0068] Regarding the surface adjacent to the margin: In this embodiment, the adjacent surface S differs from the first embodiment in that, as shown in Figures 7 and 8, the end face of the metal oxide layer 150E is provided to protrude further toward the margin portion 140E than the end face of the metal layer 160E.

[0069] In other words, on the adjacent surface S, the metal layer 160E and the metal oxide layer 150E, which protrudes from the metal layer 160E towards the margin portion 140E, are formed in a stepped manner. Furthermore, in the enlarged plan view shown in Figure 3, the edge of the metal oxide layer 150E is exposed, and the metal layer 160E, which is the upper layer of the electrode portion 120E and the fuse portion 130E, the end face of the metal oxide layer 150E that protrudes from the end face of the metal layer 160E, and the margin portion 140E on the dielectric film 110E can be seen.

[0070] (Manufacturing Method) The manufacturing method for the metallized film 100E according to this embodiment can be carried out by depositing a metal oxide and a metal onto the dielectric film 110E, similar to the first embodiment.

[0071] However, in this embodiment, the properties of the oil used for pattern printing in the non-vapor-deposited portion differ from those of the first embodiment. Specifically, the properties of the oil used in the manufacturing method of the metallized film 100E according to this embodiment are such that it is not easily sublimated by the heat of vapor deposition and has high wettability to the metal oxide layer 150E formed directly on the dielectric film 110E. The oil is not particularly limited as long as it has such properties. By using such an oil, the end face of the metal oxide layer 150E can be positioned on the adjacent surface S so as to protrude toward the margin portion 140E side than the end face of the metal layer 160E. This is presumed to be due to the following mechanism.

[0072] In the thickness direction of the metallized film 100E, the oil is greater than the thickness of the metal oxide layer 150E deposited on the dielectric film 110E. Therefore, the oil that extends beyond the thickness of the metal oxide layer 150E spreads slightly over the metal oxide layer 150E. Consequently, the oil covers the edges of the metal oxide layer 150E to a considerable extent. Since the metal layer 160E is deposited after this state is reached, areas where the metal layer 160E is not formed may occur not only in the non-deposited areas but also at the edges of the metal oxide layer 150E. In other words, on adjacent surfaces S, the end face of the metal oxide layer 150E may be positioned to protrude towards the margin portion 140E than the end face of the metal layer 160E.

[0073] (2.2) Effects The metallized film 100E and film capacitor of the second embodiment also exhibit the same effects as those of the first embodiment. That is, in the metallized film 100E, a metal oxide layer 150E is interposed between the dielectric film 110E and the metal layer 160E. Therefore, the film capacitor manufactured using this metallized film 100E has improved voltage resistance. In particular, in this embodiment, the end faces of the metal oxide layer 150E of the electrode portion 120E and fuse portion 130E are provided to protrude towards the margin portion 140E side more than the end face of the metal layer 160E. Therefore, the decrease in voltage resistance on adjacent surfaces S can be further suppressed.

[0074] Furthermore, the metallized film 100E according to this embodiment has a margin portion 140E where the metal oxide layer 150E and the metal layer 160E are absent, similar to the first embodiment. As a result, the leakage current of the film capacitor is reduced.

[0075] (3) Third Embodiment (3.1) Metallized Film The metallized film 100E according to the third embodiment will be described with reference to Figures 1, 4, 9 and 10. Contents similar to those of the first and second embodiments will be omitted as appropriate.

[0076] (Structure) In this embodiment, the arrangement, material, and properties of the dielectric film 110E, electrode portion 120E, and fuse portion 130E are the same as in the first and second embodiments. However, there are differences from the first and second embodiments in the surfaces S (adjacent surfaces S) adjacent to the margin portion 140E of the electrode portion 120E and fuse portion 130E. These differences will be explained below.

[0077] Regarding the surface adjacent to the margin portion, in this embodiment, as shown in Figures 9 and 10, the end face of the metal layer 160E covers the end face of the metal oxide layer 150E, and is provided on the margin portion 140E side of the end face of the metal oxide layer 150E, which is a difference from the first and second embodiments.

[0078] In other words, the adjacent surface S is almost flat and extends almost perpendicular to the dielectric film 110E in the -X direction. In front and side views, only the metal layer 160E is visible on the adjacent surface S, and the metal oxide layer 150E is not visible. In an enlarged plan view as shown in Figure 4, the metal layer 160E, which is the upper layer of the electrode portion 120E and the fuse portion 130E, and the margin portion 140E on the dielectric film 110E are visible, while the metal oxide layer 150E is not visible.

[0079] (Manufacturing Method) The manufacturing method for the metallized film 100E according to this embodiment can be carried out by depositing a metal oxide and a metal onto the dielectric film 110E, similar to the first and second embodiments.

[0080] However, in this embodiment, the properties of the oil used for pattern printing in the non-vapor-deposited portion differ from those of the first and second embodiments. That is, the properties of the oil used in the manufacturing method of the metallized film 100E according to this embodiment are not particularly limited, as long as it is moderately sublimable by the heat of vapor deposition and has a suitable wettability to the dielectric film 110E, neither too high nor too low. By using such an oil, on the adjacent surface S, the end face of the metal layer 160E can be positioned on the margin portion 140E side of the metal oxide layer 150E, covering the end face of the metal oxide layer 150E. This is presumed to be due to the following mechanism.

[0081] The oil used in this embodiment can be used for masking to form non-deposited areas, but compared to the oils of other embodiments, it is less resistant to heat and sublimes moderately. Therefore, when metal oxide is deposited, the interface of the oil in contact with the end face of the formed metal oxide layer 150E is heated, causing a small amount of oil to sublimate. This creates a minute gap between the end face of the metal oxide layer 150E and the oil remaining on the dielectric film 110E. Subsequently, by depositing metal, a metal layer 160E can be formed in the aforementioned minute gap. That is, on the adjacent surface S, the end face of the metal layer 160E can be positioned on the margin portion 140E side of the metal oxide layer 150E, so as to cover the end face of the metal oxide layer 150E.

[0082] (3.2) Effects The metallized film 100E and film capacitor of the third embodiment also exhibit the same effects as those of the first embodiment. That is, in the metallized film 100E, a metal oxide layer 150E is interposed between the dielectric film 110E and the metal layer 160E, except for adjacent surfaces S. Therefore, the film capacitor manufactured using this metallized film 100E has improved dielectric strength.

[0083] Furthermore, the metallized film 100E according to this embodiment has a margin portion 140E where the metal oxide layer 150E and the metal layer 160E are absent, similar to the first embodiment. This reduces leakage current in the film capacitor.

[0084] Furthermore, in this embodiment, on the adjacent surface S, the end faces of the metal layer 160E of the electrode portion 120E and fuse portion 130E are positioned on the margin portion 140E side of the end face of the metal oxide layer 150E, covering the end face of the metal oxide layer 150E. Here, the metal layer 160E has low wettability with respect to the dielectric film 110E. Therefore, when an excessive current flows, the end face of the metal layer 160E on the adjacent surface S is prone to evaporation. In the metallized film 100E, the fuse portion 130E is designed to be significantly smaller in the Z and Y directions compared to the electrode portion 120E. As a result, when dielectric breakdown occurs, the fuse portion 130E melts and evaporates first. In other words, in this embodiment, the fuse portion 130E can be used more effectively, and the safety of the film capacitor using the metallized film 100E can be further improved.

[0085] (4) Modified Examples In the first to third embodiments of the metallized film 100E, the case of the electrode portion 120E, fuse portion 130E, and margin portion 140E pattern shown in Figure 1 has been described, but the invention is not limited thereto. Any pattern is acceptable in which an electrode portion 120E exists via a margin portion 140E in which the metal oxide layer 150E and metal layer 160E are absent, and a fuse portion 130E connects two adjacent electrode portions 120E. For example, it can be manufactured in various patterns such as the pattern disclosed in Japanese Patent Application Publication No. 2004-134561. In other words, the fuse portion 130E may connect not only two adjacent electrode portions 120E in the Z direction, but also two adjacent electrode portions 120E in the Y direction, the row of small electrodes 122E may be just one row, the width of the large electrode 121E may be smaller than the width of one small electrode 122E, the large margin portion 141E may be provided in the center of the dielectric film 110E, and the large electrode 121E and small electrodes 122E may be provided symmetrically on both sides of the dielectric film 110E.

[0086] Examples of the metallized film 100E within the scope of the first disclosure request include the following modified examples.

[0087] In the modified example 1, the metallized film 100E is arranged in the order of a metal layer 160E and a metal oxide layer 150E in the -X direction from the dielectric film 110E.

[0088] In the modified example 2, the metallized film 100E has a metal oxide layer 150E and a metal layer 160E on its upper surface, and further has a metal oxide layer 150E and / or a metal layer 160E on its lower surface opposite to the upper surface.

[0089] In the modified example 3, the metallized film 100E has an electrode portion 120E and a fuse portion 130E on its upper surface, and the electrode portion 120E and fuse portion 130E are further provided with a metal oxide layer 150E and / or a metal layer 160E.

[0090] Films for film capacitors outside the specified range may include dielectric films having a metal oxide layer or a metal layer on one side, dielectric films having a metal oxide layer on one side and a metal layer on the other side, or dielectric films without a metal oxide layer or a metal layer.

[0091] Furthermore, the first disclosure is not limited to the embodiments and modifications described above, and may be modified as appropriate within the scope of the claims and equivalents thereof.

[0092] (5) Application Examples (5.1) Inverter The inverter 10 of the first disclosure is a device comprising a film capacitor, a converter circuit 11, and an inverter circuit 12 (see Figure 23 described later).

[0093] (5.2) The vehicle 100 of the first disclosure includes an inverter 10 (see Figure 24 below).

[0094] II. Second Disclosure Next, we will explain the second disclosure.

[0095] 1. Overview Below, the film capacitor 1, metallized film 2, inverter 10, and vehicle 100 according to this embodiment will be described with reference to Figures 11 to 24. Each figure is a schematic diagram, and the ratios of the size and thickness of each component in each figure do not necessarily reflect the actual dimensional ratios.

[0096] The arrows indicating directions in each diagram are not intended to specify the direction in which film capacitor 1 and metallized film 2 should be used, but are merely there to make the explanation easier to understand and do not represent any actual function.

[0097] In Figures 11 to 20, the X, Y, and Z directions of the Cartesian coordinate system are defined.

[0098] The X direction is the width direction of the dielectric film 3. The X direction may also be considered the "left-right direction." That is, the -X direction may be considered "left" and the +X direction may be considered "right." The X direction is parallel to the axis J in Figure 21.

[0099] The Y direction is the tangential direction to the circumferential direction θ in Figure 21, if the film capacitor 1 is a so-called wound type. Note that the film capacitor 1 may also be a so-called multilayer type.

[0100] The Z direction is the thickness direction of the dielectric film 3. The Z direction may be defined as the "up-down direction" or the "front-back direction." That is, the +Z direction may be defined as "up" or "front," and the -Z direction may be defined as "down" or "back." If the film capacitor 1 is a wound type, the Z direction is the radial direction of the virtual circle centered on axis J in Figure 21.

[0101] As shown in Figure 11, the film capacitor 1 according to this embodiment comprises a first metallized film 21, a second metallized film 22, a first electrode 61, and a second electrode 62. Thus, the film capacitor 1 comprises a pair of metallized films 20 (first metallized film 21 and second metallized film 22). Multiple pairs of metallized films 20 may be stacked vertically.

[0102] In Figure 11, the first metallized film 21 and the second metallized film 22 are shown separated vertically for the sake of easier understanding of the explanation, but in reality, the first metallized film 21 and the second metallized film 22 are in contact vertically. Specifically, the first metal film 51 of the first metallized film 21 and the second oxide film 42 (second backside oxide film 42b) of the second metallized film 22 are in contact vertically. Although not shown in Figure 11, the first oxide film 41 (first backside oxide film 41b) of the first metallized film 21 and the second metal film 52 of the second metallized film 22 are in contact vertically. The same applies to Figures 2 to 18.

[0103] In the first metallized film 21, a first oxide film 41 (first surface-side oxide film 41a) and a first metal film 51 are provided on the first surface 31a of the first dielectric film 31 in this order.

[0104] In the second metallized film 22, a second metal film 52 is provided on the second surface 32a of the second dielectric film 32, and a second oxide film 42 (second back surface oxide film 42b) is provided on the second back surface 32b opposite to the second surface 32a. In Figure 11, the second metal film 52 is indirectly provided on the second surface 32a of the second dielectric film 32 via the second oxide film 42 (second surface oxide film 42a), but the second metal film 52 may also be directly provided on the second surface 32a of the second dielectric film 32.

[0105] The first electrode 61 is connected to the first metal film 51. On the other hand, the second electrode 62 is connected to the second metal film 52.

[0106] The first metal film 51 and the second oxide film 42 (second backside oxide film 42b) are facing each other.

[0107] The first metal film 51 has a first thick film portion 71 and a first thin film portion 81. The first thick film portion 71 is connected to the first electrode 61. The first thin film portion 81 is connected to the first thick film portion 71 and has a smaller thickness than the first thick film portion 71.

[0108] In the second oxide film 42 (second back-side oxide film 42b), the thickness of at least a portion of the part of the first thick film portion 71 that is facing it (the oxide thin film 40 in Figure 11) is smaller than the thickness of the part of the second oxide film 42 that is not facing it (in other words, the part of the first thin film portion 81 that is facing it).

[0109] Thus, by arranging the first thick film portion 71 of the first metal film 51 and the oxide thin film 40 of the second oxide film 42 (second back-side oxide film 42b) to face each other, the stress concentrated in this area can be reduced. Although not shown in Figure 11, if the second thick film portion 72 of the second metal film 52 and the oxide thin film 40 of the first oxide film 41 (first back-side oxide film 41b) to face each other, the stress concentrated in this area can also be reduced.

[0110] Therefore, according to this embodiment, it is possible to suppress the occurrence of cracks in the oxide film 4 and to improve the dielectric strength. In particular, as shown in Figure 11, it is possible to suppress the occurrence of cracks in the second oxide film 42 (second back-side oxide film 42b).

[0111] 2. Details (1) First Embodiment <Film Capacitor> The film capacitor 1A according to the first embodiment will be described below with reference to Figure 11. Note that the film capacitor 1A shown in Figures 12 to 14 is a modified version of the first embodiment and will be described in the section "3. Modified Versions" below.

[0112] As shown in Figure 11, the film capacitor 1A according to the first embodiment comprises a first metallized film 21, a second metallized film 22, a first electrode 61, and a second electrode 62.

[0113] ≪First Metallized Film≫ The first metallized film 21 comprises a first dielectric film 31, a first oxide film 41, and a first metal film 51.

[0114] [First Dielectric Film] The first dielectric film 31 has a constant width and thickness and is elongated. In Figure 11, the first dielectric film 31 extends in the Y direction.

[0115] The width of the first dielectric film 31 is not particularly limited. The width of the first dielectric film 31 can be considered the same as the width of the first metallized film 21.

[0116] The first dielectric film 31 has a first surface 31a and a first back surface 31b. The first back surface 31b is the surface opposite to the first surface 31a.

[0117] The thickness of the first dielectric film 31 is the distance between the first surface 31a and the first back surface 31b. The thickness of the first dielectric film 31 is not particularly limited, but for example, it is 1 μm or more and 30 μm or less.

[0118] The material of the first dielectric film 31 is not particularly limited, but examples include polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), polycarbonate (PC), and polystyrene (PS).

[0119] [First Oxide Film] The first oxide film 41 is composed of a metal oxide. The metal oxide is preferably an oxide of at least one metal selected from the group consisting of aluminum (Al), silicon (Si), zirconium (Zr), titanium (Ti), barium (Ba), calcium (Ca), and copper (Cu). The metal oxide is more preferably aluminum oxide (AlOx).

[0120] The first oxide film 41 comprises a first oxide film 41a and a first oxide film 41b. Hereinafter, in order to make it easier to distinguish between the first oxide film 41a and the first oxide film 41b, the "first oxide film 41a" may be referred to as the "first surface-side oxide film 41a," and the "first oxide film 41b" may be referred to as the "first back-side oxide film 41b."

[0121] The thickness of the first oxide film 41 is not particularly limited, but for example, it is 3 nm or more and 50 nm or less. The thickness of the first surface-side oxide film 41a and the thickness of the first back-side oxide film 41b may be the same or different.

[0122] The first surface oxide film 41a is provided on the first surface 31a of the first dielectric film 31. Specifically, the first surface oxide film 41a is directly provided over the entire surface 31a.

[0123] The first backside oxide film 41b is provided on the first back surface 31b of the first dielectric film 31. Specifically, the first backside oxide film 41b is directly provided on the entire surface of the first back surface 31b.

[0124] The first backside oxide film 41b includes an oxide thin film 40. The thickness of the oxide thin film 40 is less than the thickness of the first backside oxide film 41b (excluding the oxide thin film 40). The oxide thin film 40 extends in the Y direction at the right end of the first backside 31b of the first dielectric film 31.

[0125] [First Metal Film] The first metal film 51 is provided on the first surface oxide film 41a. Specifically, the first metal film 51 is directly provided on the portion of the first surface oxide film 41a excluding the right end. The right end of the first surface oxide film 41a is the first surface margin portion 41c.

[0126] The material of the first metal film 51 is not particularly limited, but examples include aluminum (Al), gold (Au), magnesium (Mg), zinc (Zn), tin (Sn), nickel (Ni), chromium (Cr), iron (Fe), copper (Cu), titanium (Ti), and alloys thereof.

[0127] The first metal film 51 has a first thick film portion 71 and a first thin film portion 81.

[0128] The first thick film portion 71 is connected to the first electrode 61. Specifically, the first thick film portion 71 is directly connected to the first electrode 61. Therefore, it is preferable that the first thick film portion 71 contains the same metal as the first electrode 61 (for example, zinc (Zn)). The first thick film portion 71 may be composed of two layers, an upper layer and a lower layer. For example, the upper layer may be a layer containing zinc (Zn), and the lower layer may be a layer containing aluminum (Al).

[0129] The thickness H7 of the first thick film portion 71 is not particularly limited, but for example, it is 7.6 nm or more and 105 nm or less. Although schematically illustrated in Figure 11, the first thick film portion 71 may have a slope. Therefore, in this specification, the thickness H7 of the first thick film portion 71 refers to the maximum thickness.

[0130] As the width W7 of the first thick film portion 71 increases, the ESR (equivalent series resistance) decreases, but the self-healing properties also decrease. Conversely, as the width W7 of the first thick film portion 71 decreases, the self-healing properties improve, but the ESR (equivalent series resistance) increases. Therefore, the width W7 of the first thick film portion 71 is set appropriately, taking into consideration the balance between both ESR (equivalent series resistance) and self-healing properties.

[0131] The first thin film portion 81 is connected to the first thick film portion 71. Therefore, it is preferable that the first thin film portion 81 contains the same metal as the first thick film portion 71 (for example, aluminum (Al)).

[0132] The thickness H8 of the first thin film portion 81 is smaller than the thickness H7 of the first thick film portion 71. The thickness H8 of the first thin film portion 81 is not particularly limited, but for example, it is between 6 nm and 50 nm. The thickness H8 of the first thin film portion 81 is approximately uniform.

[0133] As described above, in the first metallized film 21, the first oxide film 41 (first surface-side oxide film 41a) and the first metal film 51 are provided on the first surface 31a of the first dielectric film 31 in this order.

[0134] ≪Second Metallized Film≫ The second metallized film 22 comprises a second dielectric film 32, a second oxide film 42, and a second metal film 52. In the first embodiment, the second metallized film 22 corresponds to the first metallized film 21 inverted horizontally.

[0135] [Second Dielectric Film] The second dielectric film 32 has a constant width and thickness and is elongated. In Figure 11, the second dielectric film 32 extends in the Y direction.

[0136] The width of the second dielectric film 32 is not particularly limited. The width of the second dielectric film 32 can be considered the same as the width of the second metallized film 22. The width of the second dielectric film 32 is the same as the width of the first dielectric film 31.

[0137] The second dielectric film 32 has a second surface 32a and a second back surface 32b. The second back surface 32b is the surface opposite to the second surface 32a.

[0138] The thickness of the second dielectric film 32 is the distance between the second surface 32a and the second back surface 32b. The thickness of the second dielectric film 32 is the same as the thickness of the first dielectric film 31.

[0139] The material of the second dielectric film 32 is the same as the material of the first dielectric film 31.

[0140] [Second Oxide Film] The second oxide film 42 is composed of a metal oxide. The metal oxide that makes up the second oxide film 42 is the same as the metal oxide that makes up the first oxide film 41.

[0141] The second oxide film 42 comprises a second oxide film 42a and a second oxide film 42b. Hereinafter, in order to make it easier to distinguish between the second oxide film 42a and the second oxide film 42b, the "second oxide film 42a" may be referred to as the "second surface-side oxide film 42a," and the "second oxide film 42b" may be referred to as the "second back-side oxide film 42b."

[0142] The thickness of the second oxide film 42 is the same as the thickness of the first oxide film 41. The thickness of the second surface-side oxide film 42a and the thickness of the second back-side oxide film 42b may be the same or different.

[0143] The second surface oxide film 42a is provided on the second surface 32a of the second dielectric film 32. Specifically, the second surface oxide film 42a is directly provided on the entire second surface 32a.

[0144] The second backside oxide film 42b is provided on the second back surface 32b of the second dielectric film 32. Specifically, the second backside oxide film 42b is directly provided over the entire second back surface 32b. Therefore, the second backside oxide film 42b faces the first metal film 51 of the first metallized film 21. Although not shown in Figure 11, the first backside oxide film 41b faces the second metal film 52 of the second metallized film 22.

[0145] The thickness of the second backside oxide film 42b is preferably greater than the difference between the thickness H7 of the first thick film portion 71 and the thickness H8 of the first thin film portion 81. Similarly, the thickness of the first backside oxide film 41b is preferably greater than the difference between the thickness of the second thick film portion 72 and the thickness of the second thin film portion 82.

[0146] Furthermore, of the second oxide film 42 (here, the second back-side oxide film 42b), the thickness of at least a portion of the portion facing the first thick film portion 71 is smaller than the thickness of the portion not facing the first thick film portion 71. In short, in the first embodiment, the second back-side oxide film 42b includes an oxide thin film 40. The thickness of the oxide thin film 40 is smaller than the thickness of the second back-side oxide film 42b (excluding the oxide thin film 40). The oxide thin film 40 extends in the Y direction at the left end of the second back surface 32b of the second dielectric film 32.

[0147] [Second Metal Film] The second metal film 52 is provided on the second surface oxide film 42a. Specifically, the second metal film 52 is directly provided on the portion of the second surface oxide film 42a excluding the left end. The left end of the second surface oxide film 42a is the second surface margin portion 42c. The width M1 of the second surface margin portion 42c is not particularly limited, as long as it is long enough to ensure electrical insulation between the second metal film 52 and the first electrode 61. The width of the first surface margin portion 41c is the same as the width M1 of the second surface margin portion 42c.

[0148] The material of the second metal film 52 is the same as the material of the first metal film 51.

[0149] The second metal film 52 has a second thick film portion 72 and a second thin film portion 82. The material of the second thick film portion 72 and the second thin film portion 82 is the same as the material of the first thick film portion 71 and the first thin film portion 81.

[0150] The second thick film portion 72 is connected to the second electrode 62. Specifically, the second thick film portion 72 is directly connected to the second electrode 62.

[0151] The thickness of the second thick film portion 72 is the same as the thickness H7 of the first thick film portion 71.

[0152] The width of the second thick film portion 72 is the same as the width W7 of the first thick film portion 71. Therefore, the width of the second thick film portion 72 is also set appropriately, taking into consideration the balance between both ESR (equivalent series resistance) and self-healing properties.

[0153] The second thin film portion 82 is connected to the second thick film portion 72. The thickness of the second thin film portion 82 is less than the thickness of the second thick film portion 72. The thickness of the second thin film portion 82 is the same as the thickness H8 of the first thin film portion 81.

[0154] As described above, in the second metallized film 22, a second metal film 52 is provided on the second surface 32a of the second dielectric film 32, and a second oxide film 42 (second back surface oxide film 42b) is provided on the second back surface 32b.

[0155] <<First Electrode>> The metal constituting the first electrode 61 is not particularly limited, but examples include zinc (Zn), tin (Sn), and alloys thereof.

[0156] The first electrode 61 is connected to the first metal film 51. Specifically, the first electrode 61 is directly connected to the first thick film portion 71 of the first metal film 51. Therefore, it is preferable that the first electrode 61 contains the same metal as the first thick film portion 71 (for example, zinc (Zn)).

[0157] On the other hand, the left end of the second metallized film 22 is separated from the first electrode 61. The distance between the first electrode 61 and the left end of the second metallized film 22 is the offset width S. The offset width S is not particularly limited as long as it is a length that ensures electrical insulation between the second metal film 52 and the first electrode 61, taking into account the width M1 of the second surface-side margin portion 42c. Thus, the first electrode 61 is not connected to the second metal film 52.

[0158] ≪Second Electrode≫ The metal constituting the second electrode 62 is the same as the metal constituting the first electrode 61.

[0159] The second electrode 62 is connected to the second metal film 52. Specifically, the second electrode 62 is directly connected to the second thick film portion 72 of the second metal film 52. Therefore, it is preferable that the second electrode 62 contains the same metal as the second thick film portion 72 (for example, zinc (Zn)).

[0160] On the other hand, the right end of the first metallized film 21 is separated from the second electrode 62. The distance between the second electrode 62 and the right end of the first metallized film 21 is the same as the offset width S described above. Thus, the second electrode 62 is not connected to the first metal film 51.

[0161] <Metallic Film> Next, the metallic film 2A according to the first embodiment will be described with reference to Figure 19. The metallic film 2A corresponds to the first metallic film 21 or the second metallic film 22 in the film capacitor 1A according to the first embodiment. Hereafter, the metallic film 2A shown in Figure 19 will be described as corresponding to the first metallic film 21. As previously mentioned, the second metallic film 22 corresponds to the first metallic film 21 inverted horizontally.

[0162] The metallized film 2A comprises a dielectric film 3, a surface oxide film 4a, a metal film 5, and a back oxide film 4b. The dielectric film 3, surface oxide film 4a, metal film 5, and back oxide film 4b correspond to the first dielectric film 31, the first surface oxide film 41a, the first metal film 51, and the first back oxide film 41b, respectively.

[0163] <Dielectric Film> The dielectric film 3 has a surface 3a and a back surface 3b. The "surface 3a" and "back surface 3b" correspond to the "first surface 31a" and "first back surface 31b," respectively.

[0164] <Surface-side oxide film> The surface-side oxide film 4a is provided on the surface 3a of the dielectric film 3.

[0165] <Metal film> The metal film 5 is provided on the surface oxide film 4a.

[0166] The metal film 5 has a thick film portion 7 and a thin film portion 8. The "thick film portion 7" and the "thin film portion 8" correspond to the "first thick film portion 71" and the "first thin film portion 81," respectively.

[0167] The thick film portion 7 is provided at one end in the width direction. In Figure 19, the thick film portion 7 is provided at one end (left end) in the width direction of the surface oxide film 4a. The other end (right end) in the width direction of the surface oxide film 4a is the surface margin portion 4c. The "surface margin portion 4c" corresponds to the "first surface margin portion 41c".

[0168] The thin film portion 8 is connected to the thick film portion 7. The thickness H8 of the thin film portion 8 is smaller than the thickness H7 of the thick film portion 7.

[0169] <<Oxide film on the back side>> The oxide film 4b on the back side is provided on the back surface 3b of the dielectric film 3.

[0170] The thickness of the portion of the back-side oxide film 4b located at the other end in the width direction is smaller than the thickness of the portion located at any other end in the width direction. "The portion located at the other end in the width direction" and "the portion located at any other end in the width direction" refer to "the oxide thin film 40" and "the back-side oxide film 4b (excluding the oxide thin film 40)," respectively.

[0171] In the film capacitor 1A according to the first embodiment, it is preferable that the sum of the width W40 and the offset width S of the oxide thin film 40 is equal to or greater than the width W7 of the first thick film portion (see Figure 11).

[0172] <Method for Manufacturing Film Capacitors> Next, the method for manufacturing the film capacitor 1A according to the first embodiment will be described with reference to Figures 21 and 22.

[0173] <<Manufacturing of Metallized Film>> First, the metallized film 2 shown in Figure 19 is manufactured.

[0174] An oxide film 4 is formed on both sides of the dielectric film 3 by vapor deposition. Specifically, a surface-side oxide film 4a is formed on the surface 3a of the dielectric film 3. On the other hand, a back-side oxide film 4b is formed on the back surface 3b of the dielectric film 3. In this case, for example, if a mask is used for vapor deposition, an oxide thin film 40 can be formed.

[0175] Next, a metal film 5 is formed on the oxide film 4 by vapor deposition. Specifically, a thin film portion 8 is formed on the surface oxide film 4a. The thin film portion 8 formed on one end (left end) in the width direction of the surface oxide film 4a constitutes a part of the thick film portion 7. On the other hand, the other end (right end) in the width direction of the surface oxide film 4a is coated with oil before vapor deposition and becomes the surface margin portion 4c after vapor deposition.

[0176] Furthermore, a thick film portion 7 is formed by depositing metal onto one end (left end) in the width direction of the thin film portion 8 using a mask.

[0177] In this manner, the metallized film 2 is manufactured.

[0178] <<Manufacturing of the element body>> Metallized film 2 is used as the first metallized film 21, and the first metallized film 21 is reversed horizontally and used as the second metallized film 22.

[0179] As shown in Figure 21, a wound body 9 is obtained by overlapping a pair of metallized films 20 (first metallized film 21 and second metallized film 22) and winding them around the axis J.

[0180] When the winding body 9 is pressurized along one direction perpendicular to the axis J, a flattened element body 90 is manufactured (see Figure 22). Note that the winding body 9 does not necessarily need to be pressurized.

[0181] <Formation of the first and second electrodes> Metal is sprayed onto both ends of the element body 90 (the end faces on both sides in the direction of the axis J) to form the first electrode 61 and the second electrode 62.

[0182] As described above, the film capacitor 1A according to the first embodiment is manufactured.

[0183] <Effects> In the first embodiment, as shown in Figure 11, the first thick film portion 71 of the first metal film 51 and the oxide thin film 40 of the second oxide film 42 (here, the second back-side oxide film 42b) face each other. By making a part of the second back-side oxide film 42b thinner in this way, space is secured to accommodate the first thick film portion 71 when the pair of metallized films 20 are wound or laminated. Therefore, it is possible to reduce the concentration of stress in the part of the second back-side oxide film 42b that is located near the first thick film portion 71. Although not shown in Figure 11, the second thick film portion 72 of the second metal film 52 and the oxide thin film 40 of the first oxide film 41 (first back-side oxide film 41b) face each other. Therefore, it is possible to reduce the concentration of stress in the part of the first back-side oxide film 41b that is located near the second thick film portion 72.

[0184] In this way, the stress acting on the oxide film 4 is dispersed, which suppresses the occurrence of cracks in the oxide film 4. Furthermore, the oxide film 4, with its damage suppressed, is interposed between the dielectric film 3 and the first metal film 51, and between the dielectric film 3 and the second metal film 52, thereby improving the dielectric strength.

[0185] Therefore, according to the first embodiment, it is possible to suppress the occurrence of cracks in the oxide film 4 and to improve the dielectric strength.

[0186] Furthermore, in the first embodiment, since the first thick film portion 71 and the first electrode 61 are directly connected, the contact between the first metal film 51 and the first electrode 61 is high. Similarly, since the second thick film portion 72 and the second electrode 62 are directly connected, the contact between the second metal film 52 and the second electrode 62 is also high. Note that "high contact" means that the electrical and mechanical properties of the contact portion are good.

[0187] (2) Second Embodiment <Film Capacitor> Next, the film capacitor 1B according to the second embodiment will be described with reference to Figure 15. In the second embodiment, components similar to those in the first embodiment are given the same reference numerals as in the first embodiment, and detailed descriptions may be omitted. Note that the film capacitor 1B shown in Figures 16 to 18 is a modified version of the second embodiment, and will be described in the section "3. Modified Versions" below.

[0188] The film capacitor 1B according to the second embodiment differs from the film capacitor 1A according to the first embodiment in that it does not contain a component equivalent to the oxide thin film 40 of the first embodiment. The differences will be explained below in detail.

[0189] [First Oxide Film] The right edge of the first back surface 31b of the first dielectric film 31 is the first back surface margin portion 41d. The first back surface margin portion 41d is a part of the first back surface 31b.

[0190] The first backside margin portion 41d does not contain the first backside oxide film 41b. In other words, the first backside margin portion 41d does not contain anything corresponding to the oxide thin film 40 of the first embodiment. Therefore, at least a portion of the second thick film portion 72 does not face the first oxide film 41 (first backside oxide film 41b).

[0191] Although not shown in Figure 15, the second thick film portion 72 and the first back-side margin portion 41d of the first dielectric film 31 are facing each other. However, it is preferable that the second thick film portion 72 and the first dielectric film 31 are not in direct contact. Specifically, it is preferable that the second thick film portion 72 and the right-side end face and the first back-side margin portion 41d of the first dielectric film 31 are separated.

[0192] [Second Oxide Film] The left end of the second back surface 32b of the second dielectric film 32 is the second back surface margin portion 42d. The second back surface margin portion 42d is part of the second back surface 32b.

[0193] The second backside oxide film 42b does not exist in the second backside margin portion 42d. In other words, there is nothing in the second backside margin portion 42d that corresponds to the oxide thin film 40 of the first embodiment. Therefore, at least a part (all in Figure 15) of the first thick film portion 71 does not face the second oxide film 42 (second backside oxide film 42b).

[0194] In Figure 15, the first thick film portion 71 and the second back-side margin portion 42d of the second dielectric film 32 are facing each other. However, it is preferable that the first thick film portion 71 and the second dielectric film 32 are not in direct contact. Specifically, it is preferable that the first thick film portion 71 and the left end face and the second back-side margin portion 42d of the second dielectric film 32 are separated.

[0195] <Metalized Film> Next, the metalized film 2B according to the second embodiment will be described with reference to Figure 20.

[0196] The metallized film 2B according to the second embodiment differs from the metallized film 2A according to the first embodiment in that there is no equivalent to the oxide thin film 40 of the first embodiment. The differences will be explained below in detail.

[0197] <<Oxide film on the back side>> The oxide film 4b on the back side is provided on the back surface 3b of the dielectric film 3. Specifically, the right edge of the back surface 3b of the dielectric film 3 is the back side margin portion 4d. The back side margin portion 4d is part of the back surface 3b. The "back side margin portion 4d" corresponds to the "first back side margin portion 41d".

[0198] Thus, the oxide film 4b on the back side is not provided at the other end (right end) in the width direction of the dielectric film 3.

[0199] In the film capacitor 1B according to the second embodiment, it is preferable that the sum of the width M2 of the back side margin portion 4d (first back side margin portion 41d) and the offset width is equal to or greater than the width of the second thick film portion 72. Similarly, it is preferable that the sum of the width of the second back side margin portion 42d and the offset width S is equal to or greater than the width W7 of the first thick film portion 71.

[0200] <Method for Manufacturing Film Capacitors> Next, the method for manufacturing the film capacitor 1B according to the second embodiment will be explained, focusing on the differences from the method for manufacturing the film capacitor 1A according to the first embodiment. Note that the manufacturing of the element body 90 and the formation of the first electrode 61 and the second electrode 62 are the same as in the first embodiment, so a detailed explanation will be omitted.

[0201] <<Manufacturing of Metallized Film>> First, the metallized film 2 shown in Figure 20 is manufactured.

[0202] An oxide film 4 is formed on both sides of the dielectric film 3 by vapor deposition. Specifically, a surface-side oxide film 4a is formed on the surface 3a of the dielectric film 3. On the other hand, a back-side oxide film 4b is formed on the back surface 3b of the dielectric film 3. The other end (right end) in the width direction of the back surface 3b of the dielectric film 3 is coated with oil before vapor deposition, and becomes a back-side margin portion 4d after vapor deposition.

[0203] Next, a metal film 5 is formed on the oxide film 4 by vapor deposition. Specifically, a thin film portion 8 is formed on the surface oxide film 4a. The thin film portion 8 formed on one end (left end) in the width direction of the surface oxide film 4a constitutes a part of the thick film portion 7. On the other hand, the other end (right end) in the width direction of the surface oxide film 4a is coated with oil before vapor deposition and becomes the surface margin portion 4c after vapor deposition.

[0204] Furthermore, a thick film portion 7 is formed by depositing metal onto one end (left end) in the width direction of the thin film portion 8 using a mask.

[0205] In this manner, the metallized film 2 is manufactured.

[0206] <Effects> The second embodiment also produces the same effects as the first embodiment. That is, in the second embodiment, as shown in Figure 15, the first thick film portion 71 of the first metal film 51 and the second back-side margin portion 42d of the second dielectric film 32 face each other. In this way, because the second back-side oxide film 42b does not exist between the first thick film portion 71 and the second back-side margin portion 42d, space is secured for accommodating the first thick film portion 71 when the pair of metallized films 20 are wound or laminated. Therefore, it is possible to reduce the concentration of stress on the second back-side oxide film 42b. Although not shown in Figure 15, the second thick film portion 72 of the second metal film 52 and the first back-side margin portion 41d of the first dielectric film 31 face each other. Therefore, it is possible to reduce the concentration of stress on the first back-side oxide film 41b.

[0207] In this way, the stress acting on the oxide film 4 is dispersed, which suppresses the occurrence of cracks in the oxide film 4. Furthermore, the oxide film 4, with its damage suppressed, is interposed between the dielectric film 3 and the first metal film 51, and between the dielectric film 3 and the second metal film 52, thereby improving the dielectric strength.

[0208] Therefore, according to the second embodiment, it is possible to suppress the occurrence of cracks in the oxide film 4 and to improve the dielectric strength.

[0209] (3) Inverter Next, the inverter 10 will be described with reference to Figure 23. The inverter 10 comprises a film capacitor 1, a converter circuit 11, and an inverter circuit 12. The film capacitor 1 may be the film capacitor 1A according to the first embodiment, or the film capacitor 1B according to the second embodiment.

[0210] The converter circuit 11 is a circuit that converts alternating current to direct current and is electrically connected to the film capacitor 1.

[0211] The inverter circuit 12 is a circuit that changes the voltage and / or frequency of the AC when converting DC to AC, and is electrically connected to the film capacitor 1.

[0212] The inverter 10 is used, for example, as follows: The converter circuit 11 of the inverter 10 is connected to the power supply 13, and the inverter circuit 12 of the inverter 10 is connected to the motor 14. The power supply 13 and the motor 14 are included in the external equipment.

[0213] First, the AC power from the power supply 13 is converted to DC by the converter circuit 11 of the inverter 10, and the converted DC is stabilized by the film capacitor 1 through repeated charging and discharging. Next, this DC is converted back to AC at a desired voltage and frequency by the inverter circuit 12 of the inverter 10 and output.

[0214] Thus, since the inverter 10 is equipped with a film capacitor 1A according to the first embodiment or a film capacitor 1B according to the second embodiment, reliability can be improved.

[0215] (4) Vehicle Next, the vehicle 100 will be described with reference to Figure 24. In particular, the drive system of the vehicle 100 will be described.

[0216] Vehicle 100 comprises an inverter 10, an AC motor 104, a transmission 105, a battery 107, an electronic control unit 108, wheels 101 (front wheels 102 and rear wheels 103), a front axle 106, and a rear axle (not shown). Vehicle 100 is an electric vehicle (EV) that runs using the AC motor 104 as a power source.

[0217] Vehicle 100 employs a front-wheel drive (FF) system. An AC motor 104, which serves as the drive source, and a transmission 105 are located at the front of the vehicle body. The transmission 105 changes the rotation of the AC motor 104 and transmits it to the front axle 106.

[0218] The front axle 106 is positioned horizontally in the vehicle width direction. Drive wheels, the front wheels 102, are attached to the left and right ends of the front axle 106. At the rear of the vehicle body, the rear axle (not shown) is positioned parallel to the front axle 106 and along the vehicle width direction. Rear wheels 103 are attached to the left and right ends of the rear axle.

[0219] The battery 107 is a DC power source. The DC power supplied from the battery 107 is converted to AC power by the inverter 10 and supplied to the AC motor 104, which is then driven to rotate. The driving force (output) of the AC motor 104 is controlled via the inverter 10, which operates according to a control signal output from the electronic control unit 108.

[0220] Thus, since the vehicle 100 is equipped with the inverter 10 described above, its reliability can be improved.

[0221] 3. Modifications (1) Modifications of the First Embodiment The following first to third modifications are common to the first embodiment in that there is a corresponding oxide thin film 40.

[0222] <First Modified Example> Figure 12 shows a film capacitor 1A according to the first modified example. In this film capacitor 1A, the oxide thin film 40 has a sloped surface. Preferably, this sloped surface is parallel to the sloped surface of the first thick film portion 71 or the second thick film portion 72. In this way, if the sloped surface of the oxide thin film 40 and the sloped surface of the first thick film portion 71 or the second thick film portion 72 are facing each other, it is possible to avoid leaving unnecessary voids when winding or laminating a pair of metallized films 20. Note that since the oxide thin film 40 has a sloped surface, the thickness of the oxide thin film 40 is not uniform.

[0223] <Second Modification> Figure 13 shows a film capacitor 1A according to the second modification. Similar to the first modification, the oxide thin film 40 has a sloped surface. Furthermore, in the second modification, the second backside oxide film 42b (excluding the oxide thin film 40) also has a sloped surface. The sloped surface of the oxide thin film 40 and the sloped surface of the second backside oxide film 42b (excluding the oxide thin film 40) are continuous and form a single sloped surface. In this way, the entire second backside oxide film 42b is inclined. That is, in the film capacitor 1A according to the second modification, the thickness of the second oxide film 42 (second backside oxide film 42b) decreases as you move from the second electrode 62 side towards the first electrode 61 side.

[0224] In the second modified example, the entire first backside oxide film 41b is also inclined. That is, the thickness of the first backside oxide film 41b decreases as it moves from the first electrode 61 side towards the second electrode 62 side.

[0225] <Third Modification> Figure 14 shows a film capacitor 1A according to the third modification. In this film capacitor 1A, the oxide thin film 40 has a shape that conforms to the outer shape of the opposing first thick film portion 71 or second thick film portion 72. That is, the first thick film portion 71 and the second thick film portion 72 have a flat upper surface and a sloped surface that slopes downward from this upper surface. The oxide thin film 40 has a surface parallel to these surfaces. Therefore, compared to the first modification, it is possible to further prevent unnecessary voids from being left when the pair of metallized films 20 are wound or laminated.

[0226] (2) Modifications of the Second Embodiment The following modifications, from the 4th to the 6th, are common to the second embodiment in that there is no equivalent to the oxide thin film 40.

[0227] <Fourth Modification> Figure 16 shows a film capacitor 1B according to the fourth modification. In this film capacitor 1B, the sum of the width of the second back-side margin portion 42d and the offset width S is smaller than the width W7 of the first thick film portion 71. In this case, the lower left corner of the second back-side oxide film 42b may interfere with the first thick film portion 71, but it does not interfere with the entire first thick film portion 71. Therefore, it is possible to suppress the occurrence of cracks in the second back-side oxide film 42b. Note that the sum of the width of the first back-side margin portion 41d and the offset width may be smaller than the width of the second thick film portion 72.

[0228] <Fifth Modification> Figure 17 shows a film capacitor 1B according to the fifth modification. In the fifth modification, the relationship between the width of the second back-side margin portion 42d and the offset width S, total length L, and the width W7 of the first thick film portion 71 is reversed compared to the fourth modification. That is, in the film capacitor 1B according to the fifth modification, the width of the second back-side margin portion 42d and the offset width S, total length L, is greater than the width W7 of the first thick film portion 71. In this case, the possibility of the second back-side oxide film 42b interfering with the first thick film portion 71 is reduced, and the occurrence of cracks in the second back-side oxide film 42b can be suppressed. In this case, it is preferable to make the thickness of the second back-side oxide film 42b greater than the difference between the thickness H7 of the first thick film portion 71 and the thickness H8 of the first thin film portion 81. This reduces the possibility of the first thick film portion 71 directly contacting the second dielectric film 32. Therefore, a decrease in withstand voltage can be suppressed. Furthermore, the sum of the width of the first back-side margin portion 41d and the offset width may be greater than the width of the second thick film portion 72.

[0229] <Sixth Modification> Figure 18 shows a film capacitor 1B according to the sixth modification. In this film capacitor 1B, as shown in Figure 18, the first thick film portion 71 of the first metal film 51 and the second back-side margin portion 42d of the second dielectric film 32 face each other. Furthermore, the entire second back-side oxide film 42b is inclined. That is, the thickness of the second back-side oxide film 42b decreases as it moves from the second electrode 62 side toward the first electrode 61 side.

[0230] In the sixth modified example, the entire first backside oxide film 41b is also inclined. That is, the thickness of the first backside oxide film 41b decreases as it moves from the first electrode 61 side towards the second electrode 62 side.

[0231] III. Third Disclosure Next, we will explain the third disclosure.

[0232] 1. The third disclosure will be explained with reference to the schematic drawings. Each figure is a schematic diagram, and the ratios of the size and thickness of each component in each figure do not necessarily reflect the actual dimensional ratios. Also, the arrows indicating each direction in each figure are not intended to define the direction in which the film capacitor 10F is used, but are merely there to make the explanation easier to understand and do not have any actual meaning. The first direction D1, the second direction D2, and the third direction D3 are mutually orthogonal. The first direction D1 is the short side direction (width direction) of the dielectric film 4F, and is sometimes called the "left-right direction". The second direction D2 is the long side direction of the dielectric film 4F, and is sometimes called the "front-back direction". The third direction D3 is the thickness direction of the dielectric film 4F, and is sometimes called the "up-down direction". Viewing along the third direction D3 is called a plan view.

[0233] A film capacitor 10F can be manufactured from a metallized film 3F comprising a dielectric film 4F, a metal oxide layer 6F (61F) disposed on one surface 8F of the dielectric film 4F, and a metal layer 5F disposed on the metal oxide layer 6F (61F). From the viewpoint of improving the withstand voltage of the film capacitor 10F, such a film capacitor 10F may further include a metal oxide layer 6F (62F) different from the metal oxide layer 6F (61F). In this case, if the thickness of the metal oxide layers 6F (61F, 62F) in the film capacitor 10F can be increased, the withstand voltage of the film capacitor 10F can be efficiently increased. However, simply increasing the thickness of the metal oxide layers 6F (61F, 62F) did not efficiently increase the withstand voltage of the film capacitor 10F. Therefore, the inventors diligently conducted research and development to efficiently increase the withstand voltage of the film capacitor 10F, resulting in the third disclosure.

[0234] The metallized film 3F according to this embodiment comprises a dielectric film 4F, a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the dielectric film 4F, a metal layer 5F disposed on the first metal oxide layer 6F (61F), and a second metal oxide layer 6F (62F) disposed on the metal layer 5F or on the second surface 8F (82F) of the dielectric film 4F. The thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). The metallized film 3F having such a configuration can efficiently increase the withstand voltage of the film capacitor 10F. The reason for this is thought to be as follows.

[0235] The coefficients of linear expansion of the dielectric film 4F, metal layer 5F, and metal oxide layer 6F contained in a single metallized film 3F may differ. Therefore, if the thickness of the metal oxide layer 6F (61F) that is in close contact with both the dielectric film 4F and the metal layer 5F contained in the same metallized film 3F is increased, cracks are more likely to occur in the metal oxide layer 6F (61F). When cracks occur in the metal oxide layer 6F (61F), the dielectric strength of the film capacitor 10F is more likely to be impaired.

[0236] In contrast, in this embodiment, a metal oxide layer 6F (62F), different from the metal oxide layer 6F (61F), is placed on the metallized film 3F so as not to be in close contact with either the dielectric film 4F or the metal layer 5F. Furthermore, the thickness of the metal oxide layer 6F (62F) is made greater than the thickness of the metal oxide layer 6F (61F). By doing so, the occurrence of cracks in the metal oxide layer 6F (61F) contained in the film capacitor 10F is suppressed, and the dielectric strength of the film capacitor 10F is improved due to the increased thickness of the metal oxide layer 6F (62F).

[0237] For the reasons stated above, the metallized film 3F according to this embodiment can efficiently improve the voltage withstand capability of the film capacitor 10F. Here, "adhesion" means that the components contained in one metallized film 3F, formed by the deposition of metal or metal oxide, are in contact with each other. Therefore, "adhesion" as used here does not include the contact between components contained in one metallized film 3F and components contained in the other metallized film 3F of two metallized films 3F that are arranged vertically.

[0238] 2. The metallized film 3F and the film capacitor 10F including the metallized film 3F according to a detailed embodiment will be described with reference to the drawings.

[0239] 2.1 First Embodiment (Metallic Film) The metallic film 3F according to the first embodiment comprises a dielectric film 4F, a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the dielectric film 4F, a metal layer 5F disposed on the first metal oxide layer 6F (61F), and a second metal oxide layer 6F (62F) disposed on the metal layer 5F. The thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). The metallic film 3F according to the first embodiment can efficiently increase the withstand voltage of the film capacitor 10F. Therefore, the withstand voltage of the film capacitor 10F including the metallic film 3F according to the first embodiment can be efficiently increased.

[0240] The specific configuration of the metallized film 3F according to the first embodiment will be described in detail.

[0241] The dielectric film 4F is a film containing a dielectric material. For example, the dielectric material includes at least one selected from the group consisting of polypropylene (PP), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), polycarbonate (PC), and polystyrene (PS).

[0242] The dielectric film 4F has a constant width in a first direction D1, extends in a second direction D2, and has a constant thickness in a third direction D3. The dielectric film 4F has a first surface 81F and a second surface 82F. The first surface 81F is the top surface. The second surface 82F is the surface opposite to the first surface 81F. In other words, the second surface 82F is the bottom surface. The thickness of the dielectric film 4F is the distance between the first surface 81F and the second surface 82F, and is not particularly limited, but for example, it is between 1.0 μm and 10.0 μm.

[0243] The metal layer 5F may contain at least one selected from the group consisting of aluminum (Al), gold (Au), magnesium (Mg), zinc (Zn), tin (Sn), nickel (Ni), chromium (Cr), iron (Fe), copper (Cu), and titanium (Ti). The thickness of the first metal layer 51F is not particularly limited, but is between 3 nm and 100 nm.

[0244] The first metal oxide layer 6F (61F) contains an oxide of at least one metal selected from the group consisting of, for example, aluminum (Al), silicon (Si), zirconium (Zr), titanium (Ti), barium (Ba), calcium (Ca), and copper (Cu). Among these, aluminum oxide (AlO ｘ ) or silicon oxide (SiO ｘ ) is preferably used. The thickness of the first metal oxide layer 6F (61F) is preferably 3 nm or more and 30 nm or less. If this thickness is 3 nm or more, the withstand voltage of the film capacitor 10F can be improved more efficiently. If this thickness is 30 nm or less, the occurrence of cracks in the first metal oxide layer 6F (61F) can be further suppressed.

[0245] In the first embodiment, a second metal oxide layer 6F (62F) is arranged on the metal layer 5F. In this embodiment, the second metal oxide layer 6F (62F) is arranged to cover the metal layer 5F. The end of the metal layer 5F that is not connected to the end electrode 2F is covered with the second metal oxide layer 6F (62F).

[0246] The second metal oxide layer 6F (62F) may contain metal oxides that the first metal oxide layer 6F (61F) may contain.

[0247] The thickness of the second metal oxide layer 6F (62F) is preferably 3 nm or more and 50 nm or less. If this thickness is 3 nm or more, the withstand voltage of the film capacitor 10F can be improved more efficiently. If this thickness is 50 nm or less, the occurrence of cracks in the second metal oxide layer 6F (62F) can be further suppressed.

[0248] The ratio of the thickness of the second metal oxide layer 6F (62F) to the thickness of the first metal oxide layer 6F (61F) is preferably 1.2 or more and 5.0 or less. If the ratio of the thickness of the second metal oxide layer 6F (62F) to the thickness of the first metal oxide layer 6F (61F) is 1.2 or more, the metallized film 3F can more efficiently increase the withstand voltage of the film capacitor 10F. This thickness ratio is more preferably 1.3 or more, even more preferably 1.4 or more, and particularly preferably 1.5 or more. On the other hand, if the ratio of the thickness of the second metal oxide layer 6F (62F) to the thickness of the first metal oxide layer 6F (61F) is 5.0 or less, the thickness of the second metal oxide layer 6F (62F) in the metallized film 3F will not become excessively thick, making it less likely for cracks to occur in the second metal oxide layer 6F (62F). This thickness ratio is more preferably 4.5 or less, even more preferably 4.0 or less, particularly preferably 3.5 or less, even more preferably 3.0 or less, and still most preferably 2.5 or less.

[0249] (Film Capacitor) A film capacitor 10F can be manufactured from the metallized film 3F according to the first embodiment. In the first embodiment, the film capacitor 10F includes a pair of metallized films 3F (see Figure 25). For example, the film capacitor 10F can be manufactured by winding two of the metallized films 3F described above together or by stacking them alternately. In other words, the film capacitor 10F includes a pair of metallized films 3F that are wound together together or a pair of metallized films 3F that are stacked alternately.

[0250] For example, the film capacitor 10F includes end electrodes 2F arranged on the left and right end faces of the film capacitor 10F. The material of the end electrodes 2F is not particularly limited, but examples include zinc (Zn), tin (Sn), or alloys thereof. The thickness of the end electrodes 2F is, for example, 0.5 mm or more and 1.5 mm or less.

[0251] Furthermore, of the pair of metallized films 3F, the metal layer 5F of one metallized film 3F is connected to one of the two end-face electrodes 2F, while the metal layer 5F of the other metallized film 3F is connected to a different end-face electrode 2F than the one connected to the metal layer 5F of the other metallized film 3F (see Figure 25).

[0252] (Modified Forms) Modified forms of the metallized film 3F according to the first embodiment will be described with reference to Figure 29. Modified forms are examples of variations in which the configuration of the embodiment is partially changed, added, or deleted. In addition, with respect to the modified forms, components that are the same as those of the film capacitor 10F in the embodiment are denoted by the same reference numerals and their description is omitted.

[0253] The metallized film 3F according to the first embodiment may have two metal layers 5F. For example, the metallized film 3F may comprise a dielectric film 4F, a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the dielectric film 4F, a first metal layer 5F (51F) disposed on the first metal oxide layer 6F (61F), and a second metal layer 5F (52F) disposed on the second surface 8F (82F) of the dielectric film 4F (see Figure 29). Note that each of the first metal layer 5F (51F) and the second metal layer 5F (52F) may have the same configuration as the metal layer 5F described above. The thickness range of each of the first metal layer 5F (51F) and the second metal layer 5F (52F) may be the same as the thickness range of the metal layer 5F described above.

[0254] Furthermore, a film capacitor 10F can be manufactured from the modified metallized film 3F. The modified metallized film 3F includes two metal layers 5F (51F, 52F). In this case, a film capacitor 10F can be manufactured from the modified metallized film 3F and an insulating film 7F that does not have metal layers 5F. Specifically, a film capacitor 10F can be manufactured by winding the modified metallized film 3F (31F) and the insulating film 7F together or by alternately stacking them (see Figure 29).

[0255] Further details will be provided regarding the specific configuration of the film capacitor 10F, which includes the modified metallized film 3F (31F). For example, the film capacitor 10F includes the modified metallized film 3F (31F) described above and an insulating film 7F. The metallized film 3F (31F) comprises a dielectric film (hereinafter referred to as the first dielectric film) 4F (41F), a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the first dielectric film 4F (41F), a first metal layer 5F (51F) disposed on the first metal oxide layer 6F (61F), a second metal oxide layer 6F (62F) disposed on the first metal layer 5F (51F), and a second metal layer 5F (52F) disposed on the second surface 8F (82F) of the first dielectric film 4F (41F). For example, the insulating film 7F includes a dielectric film (hereinafter referred to as the second dielectric film) 4F (42F). The first metal layer 5F (51F) and the second metal oxide layer 6F (62F) face each other. The thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F).

[0256] The first dielectric film 4F (41F) and the second dielectric film 4F (42F) may each have the same configuration as the dielectric film 4F described above. The thickness range of the first dielectric film 4F (41F) and the thickness range of the second dielectric film 4F (42F) may each be the same as the thickness range of the dielectric film 4F described above.

[0257] Furthermore, the first metal layer 5F (51F) of the metallized film 3F (31F) is connected to one of the two end electrodes 2F. The second metal layer 5F (52F) of the metallized film 3F (31F) is connected to a different end electrode 2F than the one connected to the first metal layer 5F (51F) of the metallized film 3F (31F).

[0258] 2.2 Second Embodiment (Metallic Film) The metallic film 3F according to the second embodiment will be described with reference to Figure 26. In the second embodiment, components similar to those in the first embodiment are denoted by the same reference numerals as in the first embodiment, and detailed descriptions may be omitted. Components not specifically mentioned in the second embodiment are the same as those in the first embodiment.

[0259] The second embodiment differs from the first embodiment in that a second metal oxide layer 6F (62F) is disposed on the second surface 8F (82F) of the dielectric film 4F. That is, the metallized film 3F according to the second embodiment comprises a dielectric film 4F, a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the dielectric film 4F, a metal layer 5F disposed on the first metal oxide layer 6F (61F), and a second metal oxide layer 6F (62F) disposed on the second surface 8F (82F) of the dielectric film 4F. The thickness of the second metal oxide layer 62F is greater than the thickness of the first metal oxide layer 61F. The metallized film 3F according to the second embodiment can efficiently increase the withstand voltage of the film capacitor 10F. Therefore, the withstand voltage of the film capacitor 10F including the metallized film 3F according to the second embodiment can be efficiently increased.

[0260] (Film Capacitor) A film capacitor 10F can be manufactured from the metallized film 3F according to the second embodiment. Similar to the first embodiment, in the second embodiment, the film capacitor 10F includes a pair of metallized films 3F (see Figure 26). For example, the film capacitor 10F can be manufactured by winding two of the metallized films 3F described above together or by stacking them alternately. In other words, the film capacitor 10F includes a pair of metallized films 3F that are wound together together or a pair of metallized films 3F that are stacked alternately.

[0261] The dielectric film 4F according to the second embodiment may have the same configuration as the dielectric film 4F according to the first embodiment. The thickness range of the dielectric film 4F according to the second embodiment may be the same as the thickness range of the dielectric film 4F according to the first embodiment. The metal layer 5F according to the second embodiment may have the same configuration as the metal layer 5F according to the first embodiment. The thickness range of the metal layer 5F according to the second embodiment may be the same as the thickness range of the metal layer 5F according to the first embodiment.

[0262] Furthermore, of the pair of metallized films 3F, the metal layer 5F of one metallized film 3F is connected to one of the two end-face electrodes 2F. The metal layer 5F of the other metallized film 3F is connected to a different end-face electrode 2F than the one connected to the metal layer 5F of the other metallized film 3F (see Figure 26).

[0263] 2.3 A metallized film 3F according to another embodiment of the film capacitor has been described. The metallized film 3F according to the embodiment can efficiently increase the dielectric strength of the film capacitor 10F. In the above embodiment, one metallized film 3F included both the first metal oxide layer 6F (61F) and the second metal oxide layer 6F (62F), but the third disclosure is not limited thereto. For example, if the film capacitor 10F includes two types of metal oxide layers 6F (61F, 62F) with different thicknesses, one metallized film 3F does not need to include both types of metal oxide layers 6F (61F, 62F) with different thicknesses at the same time. In this case, the metal oxide layer 6F (62F) which is thicker than the metal oxide layer 6F (61F) should be placed on the film capacitor 10F so as not to be in close contact with either the dielectric film 4F or the metal layer 5F. This allows for an efficient increase in the voltage rating of the 10F film capacitor.

[0264] A specific example will be given to describe a configuration in which the film capacitor 10F includes two types of metal oxide layers 6F (61F, 62F) of different thicknesses, and one metallized film 3F does not simultaneously include both types of metal oxide layers 6F (61F, 62F) of different thicknesses. Note that for the following film capacitor 10F, components similar to those in the above embodiment are denoted by the same reference numerals as in the above embodiment, and detailed descriptions may be omitted. Components not specifically mentioned in the following configuration are the same as those in the above embodiment.

[0265] For example, the third disclosure includes a film capacitor 10F shown in Figure 27. The film capacitor 10F shown in Figure 27 is manufactured by winding two types of metallized films 3F (hereinafter also referred to as the first metallized film 3F (31F) and the second metallized film 3F (32F)) in layers or by alternately stacking them (see Figure 27).

[0266] The specific configuration of the film capacitor 10F shown in Figure 27 will now be described. The film capacitor 10F shown in Figure 27 includes a first metallized film 3F (31F) and a second metallized film 3F (32F). The first metallized film 3F (31F) comprises a first dielectric film 4F (41F), a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the first dielectric film 4F (41F), and a first metal layer 5F (51F) disposed on the first metal oxide layer 6F (61F). The second metallized film 3F (32F) comprises a second dielectric film 4F (42F), a second metal layer 5F (52F) disposed on the third surface 8F (83F) of the second dielectric film 4F (42F), and a second metal oxide layer 6F (62F) disposed on the fourth surface 8F (84F) of the second dielectric film 4F (42F). The first metal layer 5F (51F) and the second metal oxide layer 6F (62F) face each other. The thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). In this case, each of the first metal oxide layer 6F (61F) and the second metal oxide layer 6F (62F) is included in the first metallized film 3F (31F) and the second metallized film 3F (32F), respectively. However, the thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). Therefore, the voltage withstand capability of the film capacitor 10F can be efficiently increased.

[0267] Each of the first dielectric film 4F (41F) and the second dielectric film 4F (42F) may have the same configuration as the dielectric film 4F according to the first embodiment. The thickness range of the first dielectric film 4F (41F) and the thickness range of the second dielectric film 4F (42F) may be the same as the thickness range of the dielectric film 4F according to the first embodiment. Each of the first metal layer 5F (51F) and the second metal layer 5F (52F) may have the same configuration as the metal layer 5F according to the first embodiment. The thickness range of each of the first metal layer 5F (51F) and the second metal layer 5F (52F) may be the same as the thickness range of the metal layer 5F according to the first embodiment.

[0268] Furthermore, of the pair of metallized films 3F (31F, 32F), the first metal layer 51F of the first metallized film 31F is connected to one of the two end-face electrodes 2F, and the second metal layer 52F of the second metallized film 32F is connected to an end-face electrode 2F different from the end-face electrode 2F that is connected to the first metal layer 51F of the first metallized film 31F.

[0269] Furthermore, the third disclosure includes a film capacitor 10F shown in Figure 28. The film capacitor 10F shown in Figure 28 is manufactured by winding or alternately stacking a metallized film 3F and an insulating film 7F (see Figure 28).

[0270] The specific configuration of the film capacitor 10F shown in Figure 28 will now be described. The film capacitor 10F shown in Figure 28 includes a metallized film 3F and an insulating film 7F. The metallized film 3F comprises a first dielectric film 4F (41F), a first metal oxide layer 6F (61F) disposed on the first surface 8F (81F) of the first dielectric film 4F (41F), a first metal layer 5F (51F) disposed on the first metal oxide layer 6F (61F), and a second metal layer 5F (52F) disposed on the second surface 8F (82F) of the first dielectric film 4F (41F). The insulating film 7F comprises a second dielectric film 4F (42F) and a second metal oxide layer 6F (62F) disposed on the fourth surface 8F (84F) of the second dielectric film 4F (42F). The first metal layer 5F (51F) and the second metal oxide layer 6F (62F) face each other. The thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). In this case, each of the first metal oxide layer 6F (61F) and the second metal oxide layer 6F (62F) is included in the metallized film 3F and the insulating film 7F, respectively. However, the thickness of the second metal oxide layer 6F (62F) is greater than the thickness of the first metal oxide layer 6F (61F). Therefore, the withstand voltage of the film capacitor 10F can be efficiently increased.

[0271] Furthermore, the first metal layer 5F (51F) of the metallized film 3F is connected to one of the two end electrodes 2F. The second metal layer 5F (52F) of the metallized film 3F is connected to a different end electrode 2F than the one connected to the first metal layer 5F (51F) of the metallized film 3F.

[0272] A film capacitor 10F that does not use the metallized film 3F according to the first or second embodiment has been described. In the film capacitor 10F described above, each of the first dielectric film 4F (41F) and the second dielectric film 4F (42F) may have the same configuration as the dielectric film 4F according to the first embodiment. The thickness range of the first dielectric film 4F (41F) and the thickness range of the second dielectric film 4F (42F) may be the same as the thickness range of the dielectric film 4F according to the first embodiment. Each of the first metal layer 5F (51F) and the second metal layer 5F (52F) may have the same configuration as the metal layer 5F according to the first embodiment. The thickness range of the first metal layer 5F (51F) and the thickness range of the second metal layer 5F (52F) may be the same as the thickness range of the metal layer 5F according to the first embodiment.

[0273] 3. Applications of Film Capacitors The film capacitor 10F described above can be applied to various applications, but it can be suitably used to manufacture the inverter 10 (see Figure 23 described above). An inverter 10 manufactured from a film capacitor 10F having the above configuration can exhibit high reliability. Here, reliability means that the characteristics of the film capacitor 10F are maintained.

[0274] The inverter 10 having the above configuration can be applied to various uses, but it can be particularly suitably used for manufacturing a vehicle 100 (see Figure 24 described above). Specifically, the vehicle 100 is an electric vehicle that runs using an AC motor as a drive source. The number of inverters 10 in the vehicle 100 is not particularly limited, but for example, there are one to two inverters per vehicle 100.

[0275] IV. Aspects As will be apparent from the above embodiments and modifications, this disclosure includes the following aspects. Hereinafter, reference numerals are enclosed in parentheses solely to indicate their correspondence with the embodiments.

[0276] The first embodiment is a metallized film (100E) comprising a dielectric film (110E), a plurality of electrode portions (120E), and a fuse portion (130E). The plurality of electrode portions (120E) are arranged on one or both sides of the dielectric film (110E) via margin portions (140E). The fuse portion (130E) connects two adjacent electrode portions (120E) from the plurality of electrode portions (120E) via the margin portions (140E). Each of the plurality of electrode portions (120E) and the fuse portion (130E) has a metal oxide layer (150E) and a metal layer (160E) aligned in the thickness direction of the dielectric film (110E).

[0277] According to this embodiment, it is suitable as a material for manufacturing a film capacitor that achieves both improved voltage resistance and reduced leakage current.

[0278] A second embodiment is a metallized film (100E) based on the first embodiment. In the second embodiment, on the surfaces (S) adjacent to the margin portion (140E) in the multiple electrode portions (120E) and fuse portion (130E), the end face of the metal oxide layer (150E) is provided on the margin portion (140E) side than the end face of the metal layer (160E).

[0279] According to this embodiment, the voltage withstand capability of the film capacitor can be further improved.

[0280] A third embodiment is a metallized film (100E) based on the first or second embodiment. In the third embodiment, on the surfaces (S) adjacent to the margin portion (140E) in the multiple electrode portions (120E) and fuse portion (130E), the end face of the metal layer (160E) is provided on the margin portion (140E) side than the end face of the metal oxide layer (150E).

[0281] According to this embodiment, when an excessive current flows due to dielectric breakdown or the like, the metal layer (160E) of the fuse part (130E) is more likely to melt and evaporate, thereby improving the sensitivity of the fuse part (130E) and thus improving the safety of the film capacitor.

[0282] The fourth embodiment is a metallized film (100E) based on any one of the first to third embodiments. In the fourth embodiment, a plurality of electrode portions (120E) and fuse portions (130E) are arranged in the order of metal oxide layer (150E) and metal layer (160E) from the dielectric film (110E) side.

[0283] According to this embodiment, the voltage withstand capability of the film capacitor and the leakage current can be further improved.

[0284] A fifth embodiment is a metallized film (100E) based on the fourth embodiment. In the fifth embodiment, the end face of the metal oxide layer (150E) is covered with a metal layer (160E) on the surface adjacent to the margin portion (140E) in the multiple electrode portions (120E) and fuse portion (130E). The end face of the metal layer (160E) is in contact with the dielectric film (110E).

[0285] According to this embodiment, the safety of the film capacitor can be further improved by enhancing the voltage withstand capability and reducing leakage current of the film capacitor, while also improving the sensitivity of the fuse section (130E).

[0286] The sixth embodiment is a film capacitor comprising a metallized film (100E) based on any one of the first to fifth embodiments.

[0287] According to this embodiment, it is possible to achieve both improved voltage resistance and reduced leakage current.

[0288] The seventh embodiment is an inverter (10) comprising a film capacitor according to the sixth embodiment.

[0289] According to this embodiment, it is possible to reduce the occurrence of failures due to dielectric breakdown, malfunctions, and performance degradation.

[0290] The eighth embodiment is a vehicle (100) comprising an inverter (10) according to the seventh embodiment.

[0291] According to this embodiment, malfunctions, performance degradation, etc., can be suppressed, and the product life can be extended.

[0292] The ninth aspect is a film capacitor (1; 1A) comprising: a first metallized film (21) having a first oxide film (41; 41a) and a first metal film (51) in that order on the first surface (31a) of a first dielectric film (31); a second metallized film (22) having a second metal film (52) on the second surface (32a) of a second dielectric film (32) and a second oxide film (42; 42b) on the second back surface (32b) opposite to the second surface (32a); a first electrode (61) connected to the first metal film (51); and a second electrode (62) connected to the second metal film (52). The first metal film (51) and the second oxide film (42; 42b) face each other. The first metal film (51) has a first thick film portion (71) connected to the first electrode (61) and a first thin film portion (81) connected to the first thick film portion (71) and having a smaller thickness than the first thick film portion (71). Of the second oxide film (42; 42b), the thickness of at least a portion of the part of the second oxide film (42; 42b) that faces the first thick film portion (71) is smaller than the thickness of the part of the second oxide film (42; 42b) that does not face the first thick film portion (71).

[0293] According to this embodiment, it is possible to suppress the occurrence of cracks in the oxide film (4) and to improve the dielectric strength.

[0294] The tenth embodiment is a film capacitor (1; 1A) based on the ninth embodiment. In the tenth embodiment, the thickness of the second oxide film (42; 42b) decreases from the second electrode (62) side toward the first electrode (61) side.

[0295] According to this embodiment, it is possible to suppress the occurrence of cracks in the oxide film (4) and to improve the dielectric strength.

[0296] An eleventh embodiment is a film capacitor (1; 1B) comprising: a first metallized film (21) having a first oxide film (41; 41a) and a first metal film (51) in that order on the first surface (31a) of a first dielectric film (31); a second metallized film (22) having a second metal film (52) on the second surface (32a) of a second dielectric film (32) and a second oxide film (42; 42b) on the second back surface (32b) opposite to the second surface (32a); a first electrode (61) connected to the first metal film (51); and a second electrode (62) connected to the second metal film (52). The first metal film (51) and the second oxide film (42; 42b) face each other. The first metal film (51) has a first thick film portion (71) connected to the first electrode (61) and a first thin film portion (81) connected to the first thick film portion (71) and having a smaller thickness than the first thick film portion (71). At least a portion of the first thick film portion (71) does not face the second oxide film (42; 42b).

[0297] According to this embodiment, it is possible to suppress the occurrence of cracks in the oxide film (4) and to improve the dielectric strength.

[0298] The twelfth embodiment is an inverter (10) comprising a film capacitor (1; 1A, 1B) based on any one of the ninth to eleventh embodiments.

[0299] According to this embodiment, reliability can be improved.

[0300] The thirteenth embodiment is a vehicle (100) comprising an inverter (10) according to the twelfth embodiment.

[0301] According to this embodiment, reliability can be improved.

[0302] A fourteenth embodiment is a metallized film (2; 2A) comprising a dielectric film (3) having a width direction, a surface oxide film (4a) provided on the surface (3a) of the dielectric film (3), a metal film (5) provided on the surface oxide film (4a), and a back oxide film (4b) provided on the back surface (3b) of the dielectric film (3). The metal film (5) has a thick film portion (7) provided at one end in the width direction and a thin film portion (8) connected to the thick film portion (7) and having a smaller thickness than the thick film portion (7). The thickness of the portion of the back oxide film (4b) located at the other end in the width direction is smaller than the thickness of the portion located at any other end in the width direction.

[0303] According to this embodiment, even when wound or laminated, the occurrence of cracks in the oxide film (4) can be suppressed. Therefore, the withstand voltage of the resulting film capacitor (1; 1A) can be improved.

[0304] The 15th embodiment is a metallized film (2; 2B) comprising a dielectric film (3) having a width direction, a surface oxide film (4a) provided on the surface (3a) of the dielectric film (3), a metal film (5) provided on the surface oxide film (4a), and a back oxide film (4b) provided on the back surface (3b) of the dielectric film (3). The metal film (5) has a thick film portion (7) provided at one end in the width direction and a thin film portion (8) connected to the thick film portion (7) and having a smaller thickness than the thick film portion (7). The back oxide film (4b) is not provided at the other end in the width direction of the dielectric film (3).

[0305] According to this embodiment, even when wound or laminated, the occurrence of cracks in the oxide film (4) can be suppressed. Therefore, the dielectric strength of the resulting film capacitor (1; 1B) can be improved.

[0306] The sixteenth embodiment is a metallized film (3F) comprising a dielectric film (4F), a first metal oxide layer (6F (61F)) disposed on a first surface (8F (81F)) of the dielectric film (4F), a metal layer (5F) disposed on the first metal oxide layer (6F (61F)), and a second metal oxide layer (6F (62F)) disposed on the metal layer (5F). The thickness of the second metal oxide layer (6F (62F)) is greater than the thickness of the first metal oxide layer (6F (61F)).

[0307] According to this embodiment, a metallized film (3F) can be provided that can efficiently increase the voltage withstand capability of the film capacitor (10F).

[0308] The 17th embodiment is a metallized film (3F) comprising a dielectric film (4F), a first metal oxide layer (6F (61F)) disposed on a first surface (8F (81F)) of the dielectric film (4F), a metal layer (5F) disposed on the first metal oxide layer (61F), and a second metal oxide layer (6F (62F)) disposed on a second surface (8F (82F)) of the dielectric film (4F). The thickness of the second metal oxide layer (6F (62F)) is greater than the thickness of the first metal oxide layer (6F (61F)).

[0309] According to this embodiment, a metallized film (3F) can be provided that can efficiently increase the voltage withstand capability of the film capacitor (10F).

[0310] The 18th embodiment is a film capacitor (10F) comprising a metallized film (3F) based on the 16th embodiment.

[0311] The 19th embodiment is a film capacitor (10F) comprising a metallized film (3F) based on the 17th embodiment.

[0312] A 20th embodiment is a film capacitor (10F) comprising a first metallized film (3F(31F)) comprising a first dielectric film (4F(41F)), a first metal oxide layer (6F(61F)) disposed on the first surface (8F(81F)) of the first dielectric film (4F(41F)), and a first metal layer (5F(51F)) disposed on the first metal oxide layer (6F(61F)), and a second metallized film (3F(32F)) comprising a second dielectric film (4F(42F)), a second metal layer (5F(52F)) disposed on the third surface (8F(83F)) of the second dielectric film (4F(42F)), and a second metallized film (3F(32F)) disposed on the fourth surface (8F(84F)) of the second dielectric film (4F(42F)). The first metal layer (5F (51F)) and the second metal oxide layer (6F (62F)) face each other. The thickness of the second metal oxide layer (6F (62F)) is greater than the thickness of the first metal oxide layer (6F (61F)).

[0313] A 21st embodiment is a film capacitor (10F) comprising a metallized film (3F) having a first dielectric film (4F (41F)), a first metal oxide layer (6F (61F)) disposed on the first surface (8F (81F)) of the first dielectric film (4F (41F)), a first metal layer (5F (51F)) disposed on the first metal oxide layer (6F (61F)), and a second metal layer (5F (52F)) disposed on the second surface (8F (82F)) of the first dielectric film (4F (41F)), and an insulating film (7F) having a second dielectric film (4F (42F)) and a second metal oxide layer (6F (62F)) disposed on the fourth surface (8F (84F)) of the second dielectric film (4F (42F)). The first metal layer (5F (51F)) and the second metal oxide layer (6F (62F)) face each other. The thickness of the second metal oxide layer (6F (62F)) is greater than the thickness of the first metal oxide layer (6F (61F)).

[0314] The 22nd embodiment is an inverter (10) comprising a film capacitor (10F) based on any one of the 18th to 21st embodiments.

[0315] The 23rd embodiment is a vehicle (100) comprising an inverter (10) according to the 22nd embodiment.

[0316] 100E Metallized film 110E Dielectric film 120E Electrode section 121E Large electrode 122E Small electrode 130E Fuse section 140E Margin section 141E Large margin section 142E Small margin section 150E Metal oxide layer 160E Metal layer 1 Film capacitor 1A Film capacitor 1B Film capacitor 2 Metallized film 21 First metallized film 22 Second metallized film 2A Metallized film 2B Metallized film 3 Dielectric film 3a Front surface 3b Back surface 31 First dielectric film 31a First front surface 31b First back surface 32 Second dielectric film 32a Second front surface 32b Second back surface 4 Oxide film 4a Front-side oxide film 4b Back-side oxide film 41 First oxide film 41a First front-side oxide film 42 Second oxide film 42b Second backside oxide film 5 Metal film 51 First metal film 52 Second metal film 61 First electrode 62 Second electrode 7 Thick film section 71 First thick film section 8 Thin film section 81 First thin film section 10 Inverter 100 Vehicle 2F End electrode 3F Metallized film 31F First metallized film 32F Second metallized film 4F Dielectric film 41F First dielectric film 42F Second dielectric film 5F Metal layer 51F First metal layer 52F Second metal layer 6F Metal oxide layer 61F First metal oxide layer 62F Second metal oxide layer 7F Insulating film 8F One side 81F First side 82F Second side 83F Third side 84F Fourth side 10F Film capacitor

Claims

1. A metallized film comprising: a dielectric film; a plurality of electrode portions arranged on one or both sides of the dielectric film with margin portions in between; and a fuse portion connecting two adjacent electrode portions among the plurality of electrode portions with margin portions in between, wherein each of the plurality of electrode portions and the fuse portion has a metal oxide layer and a metal layer aligned in the thickness direction of the dielectric film.

2. The metallized film according to claim 1, wherein, on the surfaces adjacent to the margin portion in the plurality of electrode portions and the fuse portion, the end face of the metal oxide layer is provided on the margin portion side than the end face of the metal layer.

3. The metallized film according to claim 1, wherein, on the surfaces adjacent to the margin portion in the plurality of electrode portions and the fuse portion, the end face of the metal layer is provided on the margin portion side than the end face of the metal oxide layer.

4. The metallized film according to claim 1, wherein the plurality of electrode portions and the fuse portion are arranged in the order of the metal oxide layer and the metal layer from the dielectric film side.

5. The metallized film according to claim 4, wherein, on the surfaces adjacent to the margin portion in the plurality of electrode portions and the fuse portion, the end face of the metal oxide layer is covered with the metal layer, and the end face of the metal layer is in contact with the dielectric film.

6. A film capacitor comprising a metallized film according to any one of claims 1 to 5.

7. An inverter comprising the film capacitor described in claim 6.

8. A vehicle equipped with the inverter described in claim 7.

9. A film capacitor comprising: a first metallized film having a first oxide film and a first metal film provided in this order on the first surface of a first dielectric film; a second metallized film having a second metal film provided on the second surface of a second dielectric film and a second oxide film provided on the second back surface opposite to the second surface; a first electrode connected to the first metal film; and a second electrode connected to the second metal film, wherein the first metal film and the second oxide film face each other, and the first metal film has a first thick film portion connected to the first electrode and a first thin film portion connected to the first thick film portion and having a thickness less than the first thick film portion, and the thickness of at least a portion of the second oxide film facing the first thick film portion is less than the thickness of the portion not facing the first thick film portion.

10. The film capacitor according to claim 9, wherein the thickness of the second oxide film decreases from the second electrode side toward the first electrode side.

11. A film capacitor comprising: a first metallized film having a first oxide film and a first metal film provided in this order on the first surface of a first dielectric film; a second metallized film having a second metal film provided on the second surface of a second dielectric film and a second oxide film provided on the second back surface opposite to the second surface; a first electrode connected to the first metal film; and a second electrode connected to the second metal film, wherein the first metal film and the second oxide film face each other, and the first metal film has a first thick film portion connected to the first electrode and a first thin film portion connected to the first thick film portion and having a thickness less than the first thick film portion, and at least a portion of the first thick film portion does not face the second oxide film.

12. An inverter comprising a film capacitor according to any one of claims 9 to 11.

13. A vehicle equipped with the inverter described in claim 12.

14. A metallized film comprising: a dielectric film having a width direction; a surface oxide film provided on the surface of the dielectric film; a metal film provided on the surface oxide film; and a back oxide film provided on the back surface of the dielectric film, wherein the metal film has a thick film portion provided at one end in the width direction and a thin film portion connected to the thick film portion and having a smaller thickness than the thick film portion, and the thickness of the portion of the back oxide film located at the other end in the width direction is smaller than the thickness of the portion located at any other end in the width direction.

15. A metallized film comprising: a dielectric film having a width direction; a surface oxide film provided on the surface of the dielectric film; a metal film provided on the surface oxide film; and a back oxide film provided on the back surface of the dielectric film, wherein the metal film has a thick film portion provided at one end in the width direction and a thin film portion connected to the thick film portion and having a thinner film portion than the thick film portion, and the back oxide film is not provided at the other end in the width direction of the dielectric film.

16. A metallized film comprising: a dielectric film; a first metal oxide layer disposed on a first surface of the dielectric film; a metal layer disposed on the first metal oxide layer; and a second metal oxide layer disposed on the metal layer, wherein the thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

17. A metallized film comprising: a dielectric film; a first metal oxide layer disposed on a first surface of the dielectric film; a metal layer disposed on the first metal oxide layer; and a second metal oxide layer disposed on a second surface of the dielectric film, wherein the thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

18. A film capacitor comprising a pair of metallized films according to claim 16.

19. A film capacitor comprising a pair of metallized films according to claim 17.

20. A film capacitor comprising: a first metallized film comprising a first dielectric film, a first metal oxide layer disposed on a first surface of the first dielectric film, and a first metal layer disposed on the first metal oxide layer; and a second metallized film comprising a second dielectric film, a second metal layer disposed on a third surface of the second dielectric film, and a second metal oxide layer disposed on a fourth surface of the second dielectric film, wherein the first metal layer and the second metal oxide layer face each other, and the thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

21. A film capacitor comprising: a metallized film comprising a first dielectric film, a first metal oxide layer disposed on a first surface of the first dielectric film, a first metal layer disposed on the first metal oxide layer, and a second metal layer disposed on a second surface of the first dielectric film; and an insulating film comprising a second dielectric film and a second metal oxide layer disposed on a fourth surface of the second dielectric film, wherein the first metal layer and the second metal oxide layer face each other, and the thickness of the second metal oxide layer is greater than the thickness of the first metal oxide layer.

22. An inverter comprising a film capacitor according to any one of claims 18 to 21.

23. A vehicle comprising the inverter described in claim 22.

Images