High-frequency module and communication device

Abstract

A high-frequency module (1) comprises: a power amplification circuit (10); a filter (31) that includes the transmission band of a band A in a passband; a filter (35) that includes a band B in a passband; a filter (34) that includes the reception band of a band C in a passband; and semiconductor components (41 and 43). The semiconductor component (41) includes: a switch (301) that is connected to the filter (31) and to the power amplification circuit (10); a switch (303) that is connected to the filter (35) and to the power amplification circuit (10); and a switch (304) that is connected to the filter (35). The semiconductor component (43) includes: switches (207 and 205) arranged in series on a path connecting a low-noise amplifier (22) and the switch (304); and a switch (203) arranged in series on a path connecting the low-noise amplifier (22) and the filter (34). The total number of the switches (207 and 205) that are stacked is larger than the total number of the switches (203) that are stacked.

Description

High-frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device.

[0002] In mobile communication devices such as mobile phones, with the progress of multi-band technology, a high-frequency module has been proposed in which a plurality of filters can be selectively connected to a power amplifier via a switch circuit. For example, Patent Document 1 discloses a high-frequency module including a switch circuit capable of switching a plurality of transmission paths and switching a transmission path and a reception path in a TDD (Time Division Duplex) mode.

[0003] Japanese Patent Application Laid-Open No. 2016-042696

[0004] However, in the above conventional technology, the reception sensitivity may decrease when signals of a plurality of bands are transmitted and received simultaneously.

[0005] Therefore, the present invention provides a high-frequency module and a communication device capable of suppressing a decrease in reception sensitivity.

[0006] A high-frequency module according to an aspect of the present invention includes a power amplification circuit, a first filter having a passband including a transmission band of a first band, a second filter having a passband including a second TDD band, a third filter having a passband including a reception band of a third band, a first semiconductor component, and a second semiconductor component. The first semiconductor component includes a first switch connected between the first filter and the power amplification circuit, a second switch connected between the second filter and the power amplification circuit, and a third switch having one end connected to the second filter. The second semiconductor component includes a low-noise amplifier, at least one fourth switch arranged in series in a path connecting an input end of the low-noise amplifier and the other end of the third switch, and at least one fifth switch arranged in series in a path connecting an input end of the low-noise amplifier and the third filter. The total stack number of at least one fourth switch is larger than the total stack number of at least one fifth switch.

[0007] A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process high-frequency signals, and the high-frequency module described above configured to transmit high-frequency signals between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to suppress the decrease in receiving sensitivity.

[0009] Figure 1 is a configuration diagram of a communication device according to an embodiment. Figure 2 is a circuit configuration diagram of a high-frequency module according to an embodiment. Figure 3 is a diagram illustrating the first mode of a high-frequency module according to a comparative example. Figure 4 is a diagram illustrating the first mode of a high-frequency module according to an embodiment. Figure 5 is a schematic plan view of a second semiconductor component according to an embodiment.

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. The embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. The z axis is perpendicular to the main surface of the module substrate, with its positive direction indicating upwards and its negative direction indicating downwards.

[0013] In the following explanation, “connected” includes not only direct connections via terminals and / or wiring conductors, but also electrical connections via other circuit elements. “C is connected between A and B” and “C is connected between A and B” mean that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path between A and B. “The path between A and B” means a path consisting of conductors that electrically connect A to B.

[0014] The "passband of a filter" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in an FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used for the transmitting and receiving bands. In contrast, in a TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0016] The term "harmonic band of a specified frequency band" refers to the frequency band from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band, where n is a natural number greater than or equal to 2. For example, the second harmonic band of a specified frequency band is the frequency band from twice the low-frequency end to twice the high-frequency end of the specified frequency band, and the third harmonic band of a specified frequency band is the frequency band from three times the low-frequency end to three times the high-frequency end of the specified frequency band. If no order is specified, "harmonic band" refers to the harmonic bands of all orders.

[0017] A "band combination capable of simultaneous communication" refers to a combination of multiple frequency bands that can be transmitted, received, or transmitted and received simultaneously, and is predefined by standardization organizations (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of "simultaneous communication" include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio - Dual Connectivity), NR-DC (New Radio - Dual Connectivity), and NE-DC (New Radio E-UTRAN - Dual Connectivity).

[0018] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements or as an entire conductor.

[0019] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0020] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0021] "Plan view of the module board" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In the plan view of the module board, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0022] Furthermore, terms indicating relationships between elements, such as "parallel" and "perpendicular," and terms indicating the shape of elements, such as "rectangle," as well as numerical ranges, do not represent only strict meanings but also include substantially equivalent ranges, such as errors of a few percent.

[0023] (Embodiment) [1. Configuration of the communication device 5] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a configuration diagram of the communication device 5 according to this embodiment.

[0024] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0025] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0026] The communication device 5 comprises a high-frequency module 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0027] The high-frequency module 1 can transmit high-frequency signals between antennas 2a and 2b and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0028] Antennas 2a and 2b are connected to the high-frequency module 1. Antennas 2a and 2b can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a and 2b can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a and 2b do not need to be included in the communication device 5. In addition, the communication device 5 may have one or more antennas in addition to antennas 2a and 2b.

[0029] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or high-frequency module 1.

[0030] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0031] [2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to the embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to the embodiment.

[0032] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0033] The high-frequency module 1 comprises a power amplification circuit 10, filters 31, 32, 33, 34 and 35, semiconductor components 41, 42 and 43, a PA (Power Amplifier) ​​control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130.

[0034] Antenna connection terminals 101 and 102 are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are terminals for supplying high-frequency signals to antennas 2a and 2b, and terminals for receiving high-frequency signals from antennas 2a and 2b. Antenna connection terminal 101 is connected to antenna 2a outside the high-frequency module 1 and to switch 305 of semiconductor component 42 inside the high-frequency module 1. Antenna connection terminal 102 is connected to antenna 2b outside the high-frequency module 1 and to switches 306 and 307 of semiconductor component 42 inside the high-frequency module 1.

[0035] The high-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 and 112 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplifiers 11 and 12 of the power amplification circuit 10 inside the high-frequency module 1, respectively.

[0036] The high-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 and 122 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplifiers 21 and 22 of the semiconductor component 43, respectively, inside the high-frequency module 1.

[0037] The digital control terminal 130 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 130 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 60 inside the high-frequency module 1.

[0038] The power amplification circuit 10 includes power amplifiers 11 and 12. Power amplifier 11 is connected between a high-frequency input terminal 111 and a filter 31. Specifically, the input terminal of power amplifier 11 is connected to the high-frequency input terminal 111. The output terminal of power amplifier 11 is connected to filter 31 via switch 301. Power amplifier 11 can amplify the transmission signal of band A using power supplied from a power source (not shown). Power amplifier 12 is connected between a high-frequency input terminal 112 and filters 33 and 35. Specifically, the input terminal of power amplifier 12 is connected to the high-frequency input terminal 112. The output terminal of power amplifier 12 is connected to filter 33 via switch 302 and to filter 35 via switch 303. Power amplifier 12 can amplify the transmission signals of bands B and C using power supplied from a power source (not shown). Note that power amplifier 12 may be divided into two power amplifiers, for example, one power amplifier for amplifying the transmission signal of band B and the other for amplifying the transmission signal of band C.

[0039] Each of the power amplifiers 11 and 12 may be composed of multiple amplifiers. For example, each of the power amplifiers 11 and 12 may be a multi-stage amplifier including multiple amplifiers connected in series. Alternatively, each of the power amplifiers 11 and 12 may be a differential or balanced power amplifier or Doherty amplifier including multiple amplifiers connected in parallel.

[0040] Semiconductor component 41 is an example of a first semiconductor component and includes switches 301, 302, 303, and 304. Semiconductor component 42 includes switches 305, 306, and 307. Semiconductor component 43 is an example of a second semiconductor component and includes low-noise amplifiers 21 and 22, as well as switches 201, 202, 203, 204, 205, 206, and 207. Note that semiconductor component 42 does not necessarily have to be included in the high-frequency module 1.

[0041] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 41 to 43. In this case, some or all of the multiple switches included in semiconductor components 41 to 43 can be made up of field-effect transistors (FETs).

[0042] The low-noise amplifier 21 is included in the semiconductor component 43 and connected between the filter 32 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the filter 32 via the switch 201. The output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal of band A using power supplied from a power supply (not shown). Note that the low-noise amplifier 21 does not have to be included in the high-frequency module 1. In this case, the low-noise amplifier 21 may be connected between the high-frequency module 1 and the RFIC 3, or it may be included in the RFIC 3. Also, an impedance matching element such as an inductor may be connected between the low-noise amplifier 21 and the filter 32.

[0043] The low-noise amplifier 22 is included in the semiconductor component 43 and is connected between filters 34 and 35 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplifier 22 is connected to filter 34 via switch 203 and to filter 35 via switches 205, 207, and 304. The output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signals of bands B and C using power supplied from a power supply (not shown). Impedance matching elements such as inductors may also be connected between the low-noise amplifier 22 and filter 34, and / or between the low-noise amplifier 22 and filter 35.

[0044] Filter 31 is an example of a first filter, and is a band-pass filter having a passband including the transmission band (A-Tx) of band A. Filter 31 can pass signals within the transmission band of band A and attenuate signals outside the transmission band of band A. One end of filter 31 is connected to switch 305, and the other end of filter 31 is connected to switch 301.

[0045] Filter 32 is an example of a fourth filter, and is a band-pass filter having a passband including the reception band (A-Rx) of band A. Filter 32 can pass signals within the reception band of band A and attenuate signals outside the reception band of band A. One end of filter 32 is connected to switch 305, and the other end of filter 32 is connected to switch 201. Note that filter 32 may not be included in high-frequency module 1.

[0046] Filter 33 is a band-pass filter having a passband including the transmission band (C-Tx) of band C. Filter 33 can pass signals within the transmission band of band C and attenuate signals outside the transmission band of band C. One end of filter 33 is connected to switch 306, and the other end of filter 33 is connected to switch 302. Note that filter 33 may not be included in high-frequency module 1.

[0047] Filter 34 is an example of a third filter, and is a band-pass filter having a passband including the reception band (C-Rx) of band C. Filter 34 can pass signals within the reception band of band C and attenuate signals outside the reception band of band C. One end of filter 34 is connected to switch 306, and the other end of filter 34 is connected to switch 203.

[0048] Filter 35 is an example of a second filter and is a band-pass filter having a passband including the transmission band and the reception band (B-TRx) of band B. Filter 35 can pass signals within the transmission band and the reception band of band B and can attenuate signals outside the transmission band and the reception band of band B. One end of filter 35 is connected to switch 307, and the other end of filter 35 is connected to switches 303 and 304.

[0049] Note that filters 31 to 35 are not limited to band-pass filters. Some or all of filters 31 to 35 may be band-elimination filters, high-pass filters, low-pass filters, or any combination thereof.

[0050] Switch 301 is an example of a first switch and is a SPST (Single-Pole Single-Throw) type switch included in semiconductor component 41. Switch 301 is connected between filter 31 and power amplifier 11. Specifically, one end of switch 301 is connected to power amplifier 11, and the other end of switch 301 is connected to filter 31. Switch 301 can switch the connection and disconnection between power amplifier 11 and filter 31 based on, for example, a digital control signal supplied from RFIC 3.

[0051] Switch 302 is a SPST type switch included in semiconductor component 41. Switch 302 is connected between filter 33 and power amplifier 12. Specifically, one end of switch 302 is connected to power amplifier 12, and the other end of switch 302 is connected to filter 33. Switch 302 can switch the connection and disconnection between power amplifier 12 and filter 33 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 302 may not be included in high-frequency module 1.

[0052] Switch 303 is an example of a second switch and is an SPST type switch included in semiconductor component 41. Switch 303 is connected between the filter 35 and the power amplifier 12. Specifically, one end of switch 303 is connected to the power amplifier 12 and the other end of switch 303 is connected to the filter 35. Switch 303 can switch the connection and disconnection between the power amplifier 12 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3.

[0053] Switch 304 is an example of a third switch and is an SPST type switch included in semiconductor component 41. Switch 304 is connected between filter 35 and switch 207. Specifically, one end of switch 304 is connected to filter 35, and the other end of switch 304 is connected to the input terminal of low-noise amplifier 22 via switches 207 and 205. Switch 304 can switch the connection and disconnection between low-noise amplifier 22 and filter 35 based on, for example, a digital control signal supplied from RFIC 3.

[0054] Switch 305 is an SPST type switch included in semiconductor component 42. Switch 305 is connected between the antenna connection terminal 101 and filters 31 and 32. Specifically, one end of switch 305 is connected to the antenna connection terminal 101, and the other end of switch 305 is connected to filters 31 and 32. Switch 305 can switch the connection and disconnection between the antenna connection terminal 101 and filters 31 and 32 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 305 does not necessarily have to be included in the high-frequency module 1.

[0055] Switch 306 is an SPST type switch included in semiconductor component 42. Switch 306 is connected between the antenna connection terminal 102 and filters 33 and 34. Specifically, one end of switch 306 is connected to the antenna connection terminal 102, and the other end of switch 306 is connected to filters 33 and 34. Switch 306 can switch the connection and disconnection between the antenna connection terminal 102 and filters 33 and 34 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 306 does not necessarily have to be included in the high-frequency module 1.

[0056] Switch 307 is an SPST type switch included in semiconductor component 42. Switch 307 is connected between the antenna connection terminal 102 and the filter 35. Specifically, one end of switch 307 is connected to the antenna connection terminal 102, and the other end of switch 307 is connected to the filter 35. Switch 307 can switch the connection and disconnection between the antenna connection terminal 102 and the filter 35 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 307 does not necessarily have to be included in the high-frequency module 1.

[0057] Switch 201 is an SPST type switch included in semiconductor component 43. Switch 201 is connected between filter 32 and low-noise amplifier 21. Specifically, one end of switch 201 is connected to the input terminal of low-noise amplifier 21, and the other end of switch 201 is connected to filter 32. Switch 201 can switch the connection and disconnection between low-noise amplifier 21 and filter 32 based on, for example, a digital control signal supplied from RFIC 3. Note that switch 201 does not necessarily have to be included in high-frequency module 1.

[0058] Switch 202 is an SPST type switch included in semiconductor component 43. Switch 202 is connected between the other end of switch 201 and ground. Switch 202 can exclusively switch between connected and disconnected states with switch 201 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 202 does not necessarily have to be included in the high-frequency module 1.

[0059] Switch 203 is an example of a fifth switch and is an SPST type switch included in semiconductor component 43. Switch 203 is arranged in series in the path connecting the input terminal of the low-noise amplifier 22 and the filter 34. Specifically, one end of switch 203 is connected to the input terminal of the low-noise amplifier 22, and the other end of switch 203 is connected to the filter 34. Switch 203 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 34 based on a digital control signal supplied, for example, from RFIC 3.

[0060] Switch 204 is an example of a seventh switch and is an SPST type switch included in semiconductor component 43. Switch 204 is connected between the other end of switch 203 and the connection point (second connection point) of filter 34 and ground. Switch 204 can exclusively switch between connected and disconnected states with switch 203 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 204 does not necessarily have to be included in the high-frequency module 1.

[0061] Switch 205 is an example of a fourth switch and is an SPST type switch included in semiconductor component 43. Switch 205 is arranged in series in the path connecting the input terminal of the low-noise amplifier 22 and the other terminal of switch 304. Specifically, one end of switch 205 is connected to the input terminal of the low-noise amplifier 22, and the other end of switch 205 is connected to the other terminal of switch 304 via switch 207. Switch 205 can, in conjunction with switch 207, switch the connection and disconnection between the low-noise amplifier 22 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3.

[0062] Switch 206 is an example of a sixth switch and is an SPST type switch included in semiconductor component 43. Switch 206 is connected between the connection point (first connection point) of switches 205 and 207 and ground. Switch 206 can switch between connected and disconnected exclusively with switch 205 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 206 does not necessarily have to be included in the high-frequency module 1.

[0063] Switch 207 is an example of a fourth switch and is an SPST type switch included in semiconductor component 43. Switch 207 is arranged in series in the path connecting the input terminal of the low-noise amplifier 22 and the other terminal of switch 304. Specifically, one end of switch 207 is connected to the other terminal of switch 205, and the other end of switch 207 is connected to the other terminal of switch 304. Switch 207 can, in conjunction with switch 205, switch the connection and disconnection between the low-noise amplifier 22 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3. Switches 207 and 205 are examples of two fourth switches. Switch 207 is one of two fourth switches and is connected between the first connection point and switch 304. Switch 205 is the other of two fourth switches and is connected between the first connection point and the input terminal of the low-noise amplifier 22.

[0064] The total number of stacks for switches 205 and 207 is greater than the total number of stacks for switch 203.

[0065] Furthermore, the semiconductor component 43 only needs to include at least one of switches 205 and 207 (at least one fourth switch) arranged in series in the receiving path of band B connecting the input terminal of the low-noise amplifier 22 and the other terminal of the switch 304. In addition, it may also include a switch arranged in series in the receiving path in addition to switches 205 and 207. In other words, the semiconductor component 43 (second semiconductor component) may include at least one fourth switch arranged in series in the receiving path of band B.

[0066] Furthermore, in addition to the switch 203 arranged in series with the receiving path of band C connecting the input terminal of the low-noise amplifier 22 and the filter 34, the semiconductor component 43 may also include a switch arranged in series with the receiving path of band C. In other words, the semiconductor component 43 (second semiconductor component) may include at least one fifth switch arranged in series with the receiving path of band C.

[0067] If the semiconductor component 43 includes the at least one fourth switch and the at least one fifth switch, the total number of stacks of the at least one fourth switch is greater than the total number of stacks of the at least one fifth switch.

[0068] Each switch in semiconductor components 41 to 43 may have a relatively high high-frequency voltage applied to it when it is off. Therefore, each switch in semiconductor components 41 to 43 is required to have high voltage withstand capability, and it is desirable that each switch be composed of multiple semiconductor elements connected in series (stacked). The semiconductor elements are, for example, FETs. When one switch is composed of, for example, one or more FETs connected in series, the number of these series-connected FETs is defined as the "stack count" of that one switch. As the stack count increases, the voltage withstand capability of that one switch can be increased (series sum of voltage withstand capability), the off capacitance of that one switch decreases (series sum of off capacitance), and the impedance of that one switch increases.

[0069] A single FET (unit FET), which is a component of the switch, consists of a pair of opposing source and drain electrodes, a channel region formed in the semiconductor substrate between the opposing source and drain electrodes, and a gate electrode positioned in the channel region. Each unit FET may have its own gate electrode, or multiple FETs may share a common gate electrode.

[0070] Furthermore, the total stack count of one or more switches refers to the stack count of a single switch if the one or more switches consist of one switch, and the sum of the stack counts of each switch that make up the multiple switches if the one or more switches consist of multiple switches.

[0071] With the above configuration, the total number of stacks of switches 207 and 205 arranged in series on the receiving path for band B connecting the low-noise amplifier 22 and switch 304 is greater than the total number of stacks of switch 203. As a result, when transmitting signals for band A and receiving signals for band C are performed simultaneously, it is possible to suppress the flow of harmonic components of the transmitted signal for band A that leak from switch 301 to switch 304 within the semiconductor component 41 into the low-noise amplifier 22 from the receiving path for band B. In other words, the isolation between the receiving path for band C connecting the low-noise amplifier 22 and filter 34 and the receiving path for band B is improved. Therefore, a decrease in the receiving sensitivity of the received signal for band C in the high-frequency module 1 can be suppressed. In addition, by including switch 207 in the semiconductor component 43, the high-frequency module 1 can be miniaturized without increasing the number of individual switch components.

[0072] Furthermore, since a (shunt-type) switch 206 connected to ground is connected to the connection point of switches 205 and 207, the harmonic components leaked through switch 207 in the first mode can be discharged to ground from switch 206. This further improves the isolation between the receiving path of band C and the receiving path of band B.

[0073] The PA control circuit 60 can control the power amplifiers 11 and 12. Specifically, the PA control circuit 60 outputs a control signal to the power amplification circuit 10 for controlling the power amplifiers 11 and 12 based on a digital control signal supplied from, for example, the RFIC 3. This controls, for example, the bias current supplied to the power amplifiers 11 and 12. Note that the PA control circuit 60 does not necessarily have to be included in the high-frequency module 1.

[0074] [3. Frequency Bands Applicable to High-Frequency Module 1] The frequency bands A, B, and C supported by high-frequency module 1 are described below.

[0075] Bands A, B, and C are frequency bands for communication systems built using Radio Access Technology (RAT). Bands A, B, and C are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, 2GGSM (2nd Generation Global System for Mobile communications) systems, and WLAN (Wireless Local Area Network) systems.

[0076] Band A is an example of the first band, and is an FDD band, a TDD band, or a SUL (Supplementary Uplink) band. Band A can be Band 8, Band 26, Band 12, Band 28, or Band 71 for LTE, or n8, n26, n12, n28, or n71 for 5GNR. However, Band A is not limited to these bands.

[0077] Band B is an example of a second TDD band. Band B can be Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR. However, Band B is not limited to these bands.

[0078] Band C is an example of a third band, and is an FDD band, TDD band, or SDL (Supplementary Downlink) band. Bands A and C are a band combination that allows simultaneous communication. Specifically, transmission of signals in Band A and reception of signals in Band C can be performed simultaneously. In addition, the harmonic bandwidth of the transmission band of Band A overlaps with the reception band of Band C at least partially.

[0079] For example, if band A is Band 8 or n8, then band C can be Band 3, Band 41, or Band 7 for LTE, or n3, n41, or n7 for 5GNR.

[0080] For example, if band A is Band 28 or n28, then band C can be Band 1, Band 66, Band 11, or Band 21 for LTE, or n1, n66, n11, or n21 for 5GNR.

[0081] For example, if band A is Band 26 or n26, then band C can be Band 41 for LTE or n41 for 5GNR.

[0082] For example, if band A is Band 12 or n12, then band C can be Band 1 or Band 66 for LTE, or n1 or n66 for 5GNR.

[0083] For example, if band A is Band 71 or n71, then band C can be Band 25 or Band 70 for LTE, or n25 or n70 for 5GNR. However, band C is not limited to these bands.

[0084] [4. Communication Mode of High-Frequency Module 1] Next, the communication mode of the high-frequency module 1 according to this embodiment will be explained in comparison with the high-frequency module 500 according to the comparative example.

[0085] [4.1. First Mode] The first modes of the high-frequency modules 1 and 500 will be described with reference to Figures 4 and 3, respectively. Figure 3 is a diagram illustrating the first mode of the high-frequency module 500 according to a comparative example. Figure 4 is a diagram illustrating the first mode of the high-frequency module 1 according to an embodiment. In Figures 3 and 4, dashed arrows represent signal paths.

[0086] First, the configuration and circuit state of the first mode of the comparative example high-frequency module 500 will be described. As shown in Figure 3, the high-frequency module 500 includes a power amplification circuit 10, filters 31, 32, 33, 34 and 35, semiconductor components 41, 42 and 543, a PA control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130. The high-frequency module 500 of the comparative example differs from the high-frequency module 1 of the embodiment only in that semiconductor component 543 is placed in place of semiconductor component 43. Therefore, in the following, the same configuration as the high-frequency module 1 of the embodiment will be omitted from the description of the high-frequency module 500 of the comparative example, and the different configurations will be described in detail.

[0087] The semiconductor component 543 includes low-noise amplifiers 21 and 22, as well as switches 201, 202, 203, 204, 205, and 206. In other words, the semiconductor component 543 does not include the switch 207, compared to the semiconductor component 43.

[0088] Low-noise amplifier 21 is connected between one end of switch 201 and the high-frequency output terminal 121. Low-noise amplifier 22 is connected between one end of switch 203 and one end of switch 205 and the high-frequency output terminal 122. Switch 201 is an SPST type switch included in semiconductor component 543. Switch 201 is connected between filter 32 and low-noise amplifier 21. Switch 202 is an SPST type switch included in semiconductor component 543. Switch 202 is connected between the path connecting the other end of switch 201 and filter 32 and ground. Switch 203 is an SPST type switch included in semiconductor component 543. Switch 203 is connected between filter 34 and low-noise amplifier 22. Switch 204 is an SPST type switch included in semiconductor component 543. Switch 204 is connected between the path connecting the other end of switch 203 and filter 34 and ground. Switch 205 is an SPST type switch included in semiconductor component 543. Switch 205 is connected between switch 304 and the low-noise amplifier 22. Switch 206 is an SPST type switch included in semiconductor component 543. Switch 206 is connected between the path connecting the other end of switch 205 and switch 304 and ground. Note that the number of stacks of switches 201, 203, and 205 included in semiconductor component 543 is the same.

[0089] The first mode is a communication mode for simultaneously transmitting signals in band A and receiving signals in band C. In the high-frequency module 500, in the first mode, switches 301, 305, 306, 202, 203, and 206 are closed, and switches 302, 303, 304, 307, 201, 204, and 205 are opened.

[0090] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 301, filter 31, switch 305, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 306, filter 34, switch 203, low-noise amplifier 22, and high-frequency output terminal 122.

[0091] At this time, since switches 301 and 304 are included in the same semiconductor component 41, the harmonic components of the transmitted signal of band A leak from switch 301 to switch 304 within the semiconductor component 41. The harmonic components that leak into switch 304 flow into the low-noise amplifier 22 via the off capacitance of switch 205. Since the frequency band of the harmonic components overlaps with the receiving band of band C at least partially, the harmonic components become noise components of the received signal of band C, reducing the reception sensitivity of the received signal of band C amplified by the low-noise amplifier 22.

[0092] Next, the circuit state of the first mode of the high-frequency module 1 according to the embodiment will be described. As shown in Figure 4, in the high-frequency module 1, in the first mode, switches 301, 305, 306, 202, 203 and 206 are closed, and switches 302, 303, 304, 307, 201, 204, 205 and 207 are opened.

[0093] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 301, filter 31, switch 305, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 306, filter 34, switch 203, low-noise amplifier 22, and high-frequency output terminal 122.

[0094] At this time, since switches 301 and 304 are included in the same semiconductor component 41, harmonic components of the transmitted signal in band A leak from switch 301 to switch 304 within the semiconductor component 41. The harmonic components leaked to switch 304 are transmitted to semiconductor component 43 via the receiving path in band B, which connects switch 304 and switch 207, as there is no filter in that receiving path. However, the harmonic components transmitted to semiconductor component 43 are suppressed from flowing into the low-noise amplifier 22 because the combined off capacitance of switches 207 and 205 is smaller than the off capacitance of switch 205 and switch 203, respectively, resulting in a relatively larger combined impedance of switches 207 and 205. In other words, the isolation between the signal path in band C connecting the low-noise amplifier 22 and filter 34 and the receiving path in band B connecting the low-noise amplifier 22 and switch 304 is improved. This suppresses the inflow of the above-mentioned harmonic components into the low-noise amplifier 22, thereby suppressing a decrease in the receiving sensitivity of the band C received signal in the high-frequency module 1. Furthermore, by including the switch 207 in the semiconductor component 43, the high-frequency module 1 can be miniaturized without increasing the number of individual switch components.

[0095] Furthermore, since a (shunt-type) switch 206 connected to ground is connected to the connection point of switches 205 and 207, the harmonic components leaking through switch 207 in the first mode can be discharged to ground from switch 206. This further improves the isolation between the receiving path of band C connecting the low-noise amplifier 22 and filter 34 and the receiving path of band B connecting the low-noise amplifier 22 and switch 304.

[0096] [4.2. Second Mode (Transmission State)] Next, the transmission state of the second mode of the high-frequency module 1 will be described.

[0097] The second mode is a communication mode for transmitting and receiving signals in Band B in TDD mode. Here, the connection state (transmission state) for transmitting signals in Band B in the second mode will be explained using Figure 2.

[0098] In the second mode of transmission, switches 303, 307, 202, 204, and 206 are closed, and switches 301, 302, 304, 305, 306, 201, 203, 205, and 207 are opened. As a result, the band B transmission signal is transmitted from the RFIC 3 to the antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 303, filter 35, switch 307, and antenna connection terminal 102.

[0099] [4.3. Second Mode (Receiving State)] Next, the receiving state of the second mode of the high-frequency module 1 will be described. As mentioned above, the second mode is a communication mode for transmitting and receiving signals in Band B in TDD mode. Here, the connection state (receiving state) for receiving signals in Band B in the second mode will be explained using Figure 2.

[0100] In the second mode of reception, switches 304, 307, 207, 205, 202, and 204 are closed, and switches 301-303, 305, 306, 201, 203, and 206 are opened. As a result, the received signal for band B is transmitted from antenna 2b to RFIC 3 via antenna connection terminal 102, switch 307, filter 35, switches 304, 207, 205, low-noise amplifier 22, and high-frequency output terminal 122.

[0101] The communication modes of the high-frequency module 1 are not limited to the first and second modes described above. For example, the communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band A. Also, for example, the communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band C. Furthermore, for example, in addition to transmitting signals in band A and receiving signals in band C, the communication modes of the high-frequency module 1 may include a mode for simultaneously receiving signals in band A and / or transmitting signals in band C.

[0102] [5. Implementation Example of High-Frequency Module 1] Next, an implementation example of the high-frequency module 1 having the circuit configuration described above will be explained with reference to the drawings. Figure 5 is a schematic plan view of the semiconductor component 43 according to the embodiment. In addition to the semiconductor component 43, Figure 5 also shows filters 32 and 34 connected to the semiconductor component 43, as well as semiconductor component 41. In Figure 5, the low-noise amplifier, switch, and filter are labeled, but these labels do not need to be attached to the actual components and elements.

[0103] Figure 5 shows an exemplary configuration, and the semiconductor component 43 can be mounted using a wide variety of circuit mounting and circuit technologies. Therefore, the description of the semiconductor component 43 provided below should not be interpreted as restrictive.

[0104] The high-frequency module 1 includes a module substrate (not shown) in addition to the multiple circuit components shown in Figure 2. The semiconductor component 43, filters 32 and 34, and semiconductor component 41 shown in Figure 5 are arranged on the main surface of the module substrate.

[0105] Although not shown in Figure 5, the power amplifier circuit 10, semiconductor components 41 and 42, filters 31, 33 and 35, and PA control circuit 60 are arranged on the main surface of the module substrate.

[0106] The semiconductor component 43 incorporates low-noise amplifiers 21 and 22, as well as switches 201 to 207, and also includes external connection terminals 431, 432, and 433.

[0107] External connection terminal 431 is an example of a first external connection terminal and is located on the main surface of semiconductor component 43. Switches 203 and 204 located inside the semiconductor component 43 and a filter 34 located outside the semiconductor component 43 are connected to it.

[0108] External connection terminal 432 is an example of a second external connection terminal, and is located on the main surface of semiconductor component 43. It is connected to switches 201 and 202 located inside semiconductor component 43 and a filter 32 located outside semiconductor component 43.

[0109] The external connection terminal 433 is an example of a third external connection terminal and is located on the main surface of the semiconductor component 43. It is connected to the other end of the switch 207 located inside the semiconductor component 43 and the switch 304 located outside the semiconductor component 43.

[0110] As shown in Figure 5, the external connection terminal 432 is positioned between the external connection terminals 431 and 433. This arrangement ensures a sufficient distance between the external connection terminals 431 and 433 by positioning the external connection terminal 432 between them. Therefore, in the first mode, leakage of harmonic components of the band A transmission signal from the external connection terminal 433 to the external connection terminal 431 can be suppressed. Consequently, a decrease in the receiving sensitivity of the band C reception signal in the high-frequency module 1 can be suppressed.

[0111] Furthermore, the external connection terminal 432 may not be connected to the filter 32, but rather to a filter having a passband that includes the receiving bands of bands other than bands A, B, and C. Alternatively, the external connection terminal 432 may not be connected to the filter 32, but rather to a ground connection terminal connected to ground. This ensures a distance between the external connection terminals 431 and 433, thereby suppressing the leakage of harmonic components of the band A transmission signal from the external connection terminal 433 to the external connection terminal 431 in the first mode. Consequently, the decrease in the receiving sensitivity of the band C reception signal in the high-frequency module 1 can be suppressed.

[0112] Furthermore, as shown in Figure 5, switch 205 is positioned between switch 207 and switch 203.

[0113] According to this, the switch 207, which is positioned to improve the isolation between the receiving path of band C connecting the low-noise amplifier 22 and the filter 34, and the receiving path of band B connecting the low-noise amplifier 22 and the switch 304, can be moved away from the switch 203. Therefore, the isolation between the receiving path of band C and the receiving path of band B can be strengthened.

[0114] The multiple components of the high-frequency module 1 may be distributed and arranged on both main surfaces of the module substrate, or they may be arranged on only one side of the module substrate.

[0115] [6. Summary] As described above, the high-frequency module 1 according to this embodiment comprises a power amplifier circuit 10, a filter 31 having a passband including the transmission band of band A, a filter 35 having a passband including band B, a filter 34 having a passband including the reception band of band C, and semiconductor components 41 and 43. The semiconductor component 41 comprises a switch 301 connected between the filter 31 and the power amplifier circuit 10, a switch 303 connected between the filter 35 and the power amplifier circuit 10, and a switch 304 with one end connected to the filter 35. The semiconductor component 43 includes a low-noise amplifier 22, at least one fourth switch (switches 207 and 205) arranged in series in a path between the input terminal of the low-noise amplifier 22 and the other terminal of the switch 304, and at least one fifth switch (switch 203) arranged in series in a path between the input terminal of the low-noise amplifier 22 and the filter 34, wherein the total number of stacks of the at least one fourth switch (switches 207 and 205) is greater than the total number of stacks of the at least one fifth switch (switch 203).

[0116] According to the above configuration, in the first mode, harmonic components of the band A transmission signal that leaked from switch 301 to switch 304 within the semiconductor component 41 are transmitted to semiconductor component 43 via the band B reception path connecting switch 304 and switch 207. However, because the combined off capacitance of at least one fourth switch is smaller than the off capacitance of at least one fifth switch, the combined impedance of at least one fourth switch becomes relatively larger. This improves the isolation between the band C signal path connecting the low-noise amplifier 22 and filter 34 and the band B reception path connecting the low-noise amplifier 22 and switch 304. Therefore, the inflow of the harmonic components into the low-noise amplifier 22 can be suppressed, thus suppressing a decrease in the reception sensitivity of the band C reception signal in the high-frequency module 1. Furthermore, by including at least one fourth switch in semiconductor component 43, the high-frequency module 1 can be miniaturized without increasing the number of individual switch components.

[0117] For example, in the high-frequency module 1, the receiving bandwidth of band C overlaps at least partially with the harmonic bandwidth of the transmitting bandwidth of band A, and bands A and C are a band combination that enables simultaneous communication.

[0118] According to this, reducing the leakage of the band A transmission signal to the low-noise amplifier 22 in the first mode is effective in suppressing the decrease in the receiving sensitivity of band C.

[0119] For example, in the high-frequency module 1, the at least one fourth switch includes switches 205 and 207, the at least one fifth switch includes switch 203, and the semiconductor component 43 further includes switch 206 connected between the first connection point of switches 205 and 207 and ground, and switch 204 connected between switch 203 and the second connection point of filter 34 and ground.

[0120] According to this, in the first mode, the harmonic components leaked through switch 207 can be discharged to ground from switch 206. This further improves the isolation between the receiving path of band C, which connects the low-noise amplifier 22 and filter 34, and the receiving path of band B, which connects the low-noise amplifier 22 and switch 304.

[0121] For example, in the high-frequency module 1, switch 207 is connected between the first connection point and switch 304, switch 205 is connected between the first connection point and the input terminal of the low-noise amplifier 22, and switch 205 is positioned between switch 207 and switch 203.

[0122] According to this, the switch 207, which is positioned to improve the isolation between the receiving path of band C connecting the low-noise amplifier 22 and the filter 34, and the receiving path of band B connecting the low-noise amplifier 22 and the switch 304, can be moved away from the switch 203. Therefore, the isolation between the receiving path of band C and the receiving path of band B can be strengthened.

[0123] For example, in the high-frequency module 1, in a first mode for simultaneously transmitting a signal in band A and receiving a signal in band C, switches 301 and 203 are closed and switches 303, 304, 207, and 205 are open; in a second mode transmission state for transmitting and receiving a signal in band B in TDD mode, switch 303 is closed and switches 301, 304, 207, 205, and 203 are open; and in a second mode reception state, switches 304, 207, and 205 are closed and switches 301, 303, and 203 are open.

[0124] According to this, the high-frequency module 1 can simultaneously transmit signals in band A and receive signals in band C, and can transmit and receive signals in band B in TDD mode.

[0125] For example, the high-frequency module 1 further includes a filter 32 having a passband that includes the receiving band of band A excluding bands C and B, and the semiconductor component 43 further includes an external connection terminal 431 connected to the filter 34 and switch 203, an external connection terminal 432 connected to the filter 32 or ground, and an external connection terminal 433 connected to the other end of switch 304 and switch 207, with the external connection terminal 432 positioned between the external connection terminals 431 and 433.

[0126] According to this, by arranging external connection terminal 432 between external connection terminals 431 and 433, the distance between external connection terminal 431 and external connection terminal 433 can be ensured, so that in the first mode, leakage of harmonic components of the band A transmission signal from external connection terminal 433 to external connection terminal 431 can be suppressed. Therefore, a decrease in the receiving sensitivity of the band C received signal in the high-frequency module 1 can be suppressed.

[0127] For example, in the high-frequency module 1, band A is Band 8 for LTE or n8 for 5GNR, and band C is Band 3, Band 41 or Band 7 for LTE, or n3, n41 or n7 for 5GNR.

[0128] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0129] For example, in the high-frequency module 1, band A is Band 28 for LTE or n28 for 5GNR, and band C is Band 1, Band 66, Band 11 or Band 21 for LTE, or n1, n66, n11 or n21 for 5GNR.

[0130] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0131] For example, in the high-frequency module 1, band A is Band 26 for LTE or n26 for 5GNR, and band C is Band 41 for LTE or n41 for 5GNR.

[0132] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0133] For example, in the high-frequency module 1, band A is Band 12 for LTE or n12 for 5GNR, and band C is Band 1 or Band 66 for LTE, or n1 or n66 for 5GNR.

[0134] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0135] For example, in the high-frequency module 1, band A is Band 71 for LTE or n71 for 5GNR, and band C is Band 25 or Band 70 for LTE, or n25 or n70 for 5GNR.

[0136] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0137] For example, in the high-frequency module 1, band B is Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR.

[0138] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0139] Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and antennas 2a and 2b.

[0140] According to this, the communication device 5 can achieve the same effect as the high-frequency module 1.

[0141] (Other Embodiments) Although the high-frequency module and communication device according to the present invention have been described above based on embodiments, the high-frequency module and communication device according to the present invention are not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by applying various modifications to the above embodiments that a person skilled in the art can conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0142] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the power amplifier 11 and the switch 301, and / or between the power amplifier 12 and switches 302 and 303. Also, for example, an impedance matching circuit may be inserted between the filter 32 and the switch 305, and / or between the filter 34 and the switch 306. Also, for example, a coupler may be connected between the switch 305 and the antenna connection terminal 101, and / or between switches 306 and 307 and the antenna connection terminal 102.

[0143] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0144] 1, 500 High-frequency module 2a, 2b Antenna 3 RFIC 4 BBIC 5 Communication device 10 Power amplifier circuit 11, 12 Power amplifier 21, 22 Low-noise amplifier 31, 32, 33, 34, 35 Filter 41, 42, 43, 543 Semiconductor components 60 PA control circuit 101, 102 Antenna connection terminal 111, 112 High-frequency input terminal 121, 122 High-frequency output terminal 130 Digital control terminal 201, 202, 203, 204, 205, 206, 207, 301, 302, 303, 304, 305, 306, 307 Switch 431, 432, 433 External connection terminal

Claims

1. A high-frequency module comprising: a power amplifier circuit; a first filter having a passband including a first band transmission band; a second filter having a passband including a second TDD (Time Division Duplex) band; a third filter having a passband including a third band reception band; a first semiconductor component and a second semiconductor component, wherein the first semiconductor component includes: a first switch connected between the first filter and the power amplifier circuit; a second switch connected between the second filter and the power amplifier circuit; and a third switch with one end connected to the second filter; the second semiconductor component includes: a low-noise amplifier; at least one fourth switch arranged in series in a path connecting the input terminal of the low-noise amplifier and the other end of the third switch; and at least one fifth switch arranged in series in a path connecting the input terminal of the low-noise amplifier and the third filter, wherein the total number of stacks of the at least one fourth switch is greater than the total number of stacks of the at least one fifth switch.

2. The receiving bandwidth of the third band at least partially overlaps with the harmonic bandwidth of the transmitting bandwidth of the first band, and the first band and the third band are a band combination capable of simultaneous communication, as described in claim 1.

3. The high-frequency module according to claim 1 or 2, wherein the at least one fourth switch comprises two fourth switches, the at least one fifth switch comprises one fifth switch, and the second semiconductor component further comprises a sixth switch connected between the first connection point of the two fourth switches and ground, and a seventh switch connected between the one fifth switch and the second connection point of the third filter and ground.

4. The high-frequency module according to claim 3, wherein one of the two fourth switches is connected between the first connection point and the third switch, the other of the two fourth switches is connected between the first connection point and the input terminal of the low-noise amplifier, and the other of the two fourth switches is positioned between one of the two fourth switches and the one fifth switch.

5. A high-frequency module according to any one of claims 1 to 4, wherein in a first mode for simultaneously transmitting a signal in the first band and receiving a signal in the third band, the first switch and the at least one fifth switch are closed, and the second switch, the third switch and the at least one fourth switch are open; in a second mode transmission state for transmitting and receiving a signal in the second TDD band in TDD mode, the second switch is closed, and the first switch, the third switch, the at least one fourth switch and the at least one fifth switch are open; and in the second mode reception state, the third switch and the at least one fourth switch are closed, and the first switch, the second switch and the at least one fifth switch are open.

6. The high-frequency module according to any one of claims 1 to 4, further comprising a fourth filter having a passband that includes the receiving bands of bands other than the third band and the second TDD band, the second semiconductor component further comprising: a first external connection terminal connected to the third filter and the at least one fifth switch; a second external connection terminal connected to the fourth filter or ground; and a third external connection terminal connected to the other end of the third switch and the at least one fourth switch, the second external connection terminal being positioned between the first external connection terminal and the third external connection terminal.

7. The high-frequency module according to any one of claims 1 to 6, wherein the first band is Band 8 for LTE (Long Term Evolution) or n8 for 5GNR (5th Generation New Radio), and the third band is Band 3, Band 41 or Band 7 for LTE, or n3, n41 or n7 for 5GNR.

8. The high-frequency module according to any one of claims 1 to 6, wherein the first band is Band 28 for LTE or n28 for 5GNR, and the third band is Band 1, Band 66, Band 11 or Band 21 for LTE, or n1, n66, n11 or n21 for 5GNR.

9. The high-frequency module according to any one of claims 1 to 6, wherein the first band is Band 26 for LTE or n26 for 5GNR, and the third band is Band 41 for LTE or n41 for 5GNR.

10. The high-frequency module according to any one of claims 1 to 6, wherein the first band is Band 12 for LTE or n12 for 5GNR, and the third band is Band 1 or Band 66 for LTE, or n1 or n66 for 5GNR.

11. The high-frequency module according to any one of claims 1 to 6, wherein the first band is Band 71 for LTE or n71 for 5GNR, and the third band is Band 25 or Band 70 for LTE, or n25 or n70 for 5GNR.

12. The high-frequency module according to any one of claims 7 to 11, wherein the second TDD band is Band 39, Band 40, or Band 41 for LTE, or n39, n40, or n41 for 5GNR.

13. A communication device comprising: a signal processing circuit configured to process high-frequency signals; and a high-frequency module according to any one of claims 1 to 12 configured to transmit the high-frequency signals between the signal processing circuit and an antenna.

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