High-frequency module and communication device

Abstract

A high-frequency module (1) is provided with: a filter (31) having a passband including the transmission band of a band A; a filter (32) having a passband including a band B (TDD band); a filter (33) having a passband including the reception band of a band (C); and semiconductor components (41, 42). The semiconductor component (41) includes: a switch (501) connected between the filter (31) and a power amplifier circuit (10); and a switch (502) connected between the filter (32) and the power amplifier circuit (10). The semiconductor component (42) includes: a switch (503) connected between the filter (31) and an antenna connection terminal (101); a switch (504) connected between the filter (32) and an antenna connection terminal (102); a switch (505) connected between the filter (33) and the antenna connection terminal (102); and a switch (506) connected between the filter (32) and a low-noise amplifier circuit (20).

Description

High-frequency Module and Communication Device

[0001] The present invention relates to a high-frequency module and a communication device.

[0002] In mobile communication devices such as mobile phones, with the progress of multi-band, a high-frequency module has been proposed in which a plurality of filters can be selectively connected to a power amplifier via a switch circuit. For example, Patent Document 1 discloses a high-frequency module including a switch circuit capable of switching a plurality of transmission paths and switching a transmission path and a reception path in a TDD (Time Division Duplex) mode.

[0003] Japanese Unexamined Patent Application Publication No. 2016-042696

[0004] However, in the above conventional technology, the reception sensitivity may decrease when signals of a plurality of bands are transmitted and received simultaneously.

[0005] Therefore, the present invention provides a high-frequency module and a communication device capable of suppressing a decrease in reception sensitivity.

[0006] A high-frequency module according to an aspect of the present invention includes a module substrate, a power amplification circuit disposed on the module substrate, a low-noise amplification circuit disposed on the module substrate, a first filter disposed on the module substrate and having a passband including a transmission band of a first band, a second filter disposed on the module substrate and having a passband including a second TDD band, a third filter disposed on the module substrate and having a passband including a reception band of a third band, a first semiconductor component and a second semiconductor component disposed on the module substrate. The first semiconductor component includes a first switch connected between the first filter and the power amplification circuit and a second switch connected between the second filter and the power amplification circuit. The second semiconductor component includes a third switch connected between the first filter and the first antenna connection terminal, a fourth switch connected between the second filter and the second antenna connection terminal, a fifth switch connected between the third filter and the second antenna connection terminal, and a sixth switch connected between the second filter and the low-noise amplification circuit.

[0007] A communication device according to one aspect of the present invention comprises a signal processing circuit configured to process high-frequency signals, and a high-frequency module configured to transmit high-frequency signals between the signal processing circuit and an antenna.

[0008] According to the present invention, it is possible to suppress the decrease in receiving sensitivity.

[0009] Figure 1 is a configuration diagram of a communication device according to Embodiment 1. Figure 2 is a circuit configuration diagram of a high-frequency module according to Embodiment 1. Figure 3 is a diagram illustrating the first mode of the high-frequency module according to Embodiment 1. Figure 4 is a diagram illustrating the transmission state of the second mode of the high-frequency module according to Embodiment 1. Figure 5 is a diagram illustrating the reception state of the second mode of the high-frequency module according to Embodiment 1. Figure 6 is a plan view of the high-frequency module according to Embodiment 1. Figure 7 is a plan view of the high-frequency module according to Embodiment 1. Figure 8 is a cross-sectional view of the high-frequency module according to Embodiment 1. Figure 9 is a plan view of the high-frequency module according to Embodiment 1. Figure 10 is a plan view of the high-frequency module according to Embodiment 1. Figure 11 is a circuit configuration diagram of a high-frequency module according to Embodiment 2. Figure 12 is a diagram illustrating the first mode of the high-frequency module according to Embodiment 2. Figure 13 is a diagram illustrating the transmission state of the second mode of the high-frequency module according to Embodiment 2. Figure 14 is a diagram illustrating the reception state of the second mode of the high-frequency module according to Embodiment 2. Figure 15 is a diagram illustrating the third mode of the high-frequency module according to Embodiment 2.

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following figures, the x and y axes are mutually orthogonal axes on a plane parallel to the main surface of the module board. The z axis is perpendicular to the main surface of the module board, with its positive direction indicating upwards and its negative direction indicating downwards.

[0013] In the following explanation, "connected" includes not only cases where there is a direct connection via terminals and / or wiring conductors, but also cases where there is an electrical connection via other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and that C is arranged in series in the path between A and B. "Path between A and B" means a path consisting of conductors that electrically connect A to B.

[0014] The "passband of a filter" is the portion of the frequency spectrum transmitted by the filter, and is defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0015] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in an FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used as the transmitting and receiving bands. In contrast, in a TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0016] The term "harmonic band of a specified frequency band" refers to the frequency band from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band, where n is a natural number greater than or equal to 2. For example, the second harmonic band of a specified frequency band is the frequency band from twice the low-frequency end to twice the high-frequency end of the specified frequency band, and the third harmonic band of a specified frequency band is the frequency band from three times the low-frequency end to three times the high-frequency end of the specified frequency band. If no order is specified, "harmonic band" refers to the harmonic bands of all orders.

[0017] A "band combination capable of simultaneous communication" refers to a combination of multiple frequency bands that can be transmitted, received, or transmitted and received simultaneously, and is predefined by standardization organizations (e.g., 3GPP (registered trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)). Examples of "simultaneous communication" include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio - Dual Connectivity), NR-DC (New Radio - Dual Connectivity), and NE-DC (New Radio E-UTRAN - Dual Connectivity).

[0018] A "terminal" refers to the point where a conductor within an element terminates. However, if the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between elements, or even the entire conductor.

[0019] "A component is placed on a substrate" includes a component being placed on the main surface of the substrate, and a component being placed within the substrate. "A component is placed on the main surface of the substrate" includes a component being placed in contact with the main surface of the substrate, as well as a component being placed above the main surface without contact with it (for example, a component being stacked on top of another component placed in contact with the main surface). Furthermore, "a component is placed on the main surface of the substrate" may also include a component being placed in a recess formed in the main surface. "A component is placed within the substrate" includes a component being encapsulated within the substrate, as well as a component being entirely placed between the two main surfaces of the substrate but with part of the component not covered by the substrate, and a component being placed within the substrate only.

[0020] "A is located between B and C" means that at least one of the line segments connecting any point in B and any point in C passes through A. "A is located closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A(B) and C" means the length of the shortest line segment (i.e., the shortest distance) among the line segments connecting any point on the surface of A(B) and any point on the surface of C.

[0021] "Plan view of the module board" means viewing an object by orthogonally projecting it onto the xy-plane in the negative z-axis direction. "In the plan view of the module board, A overlaps with B" means that the region of A projected onto the xy-plane overlaps with the region of B projected onto the xy-plane.

[0022] Furthermore, terms indicating relationships between elements such as "parallel" and "perpendicular," terms indicating the shape of elements such as "rectangle," and numerical ranges do not represent only strict meanings, but also include substantially equivalent ranges, such as errors of a few percent.

[0023] (Embodiment 1) Embodiment 1 will be described below.

[0024] [1.1. Configuration of the Communication Device 5] First, the configuration of the communication device 5 according to this embodiment will be described with reference to Figure 1. Figure 1 is a diagram of the configuration of the communication device 5 according to this embodiment.

[0025] Figure 1 shows an exemplary configuration, and the communication device 5 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the communication device 5 provided below should not be interpreted as restrictive.

[0026] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (User Equipment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0027] The communication device 5 comprises a high-frequency module 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0028] The high-frequency module 1 can transmit high-frequency signals between antennas 2a and 2b and RFIC 3. The circuit configuration of the high-frequency module 1 will be described later with reference to Figure 2.

[0029] Antennas 2a and 2b are connected to the high-frequency module 1. Antennas 2a and 2b can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a and 2b can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that some or all of antennas 2a and 2b do not need to be included in the communication device 5. In addition, the communication device 5 may have one or more antennas in addition to antennas 2a and 2b.

[0030] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 can process the transmission signal input from BBIC4 by upconversion or the like, and output the high-frequency transmission signal generated by this signal processing to the high-frequency module 1. Furthermore, RFIC3 can also process the high-frequency reception signal input via the high-frequency module 1 by downconversion or the like, and output the reception signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls switches and amplifiers, etc., of the high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or the high-frequency module 1.

[0031] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that BBIC4 does not necessarily have to be included in the communication device 5.

[0032] [1.2. Circuit Configuration of High-Frequency Module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Figure 2. Figure 2 is a circuit diagram of the high-frequency module 1 according to this embodiment.

[0033] Figure 2 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0034] The high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32, 33, 35 and 36, switches 501, 502, 503, 504, 505, 506, 509, 510, 511 and 512, a PA (Power Amplifier) ​​control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130.

[0035] Antenna connection terminals 101 and 102 are examples of a first antenna connection terminal and a second antenna connection terminal, respectively, and are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are terminals for supplying high-frequency signals to antennas 2a and 2b, and terminals for receiving high-frequency signals from antennas 2a and 2b. Antenna connection terminal 101 is connected to antenna 2a outside the high-frequency module 1 and to switch 503 inside the high-frequency module 1. Antenna connection terminal 102 is connected to antenna 2b outside the high-frequency module 1 and to switches 504 and 505 inside the high-frequency module 1.

[0036] The high-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1 and are terminals for receiving high-frequency signals from the RFIC 3. The high-frequency input terminals 111 and 112 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the power amplifiers 11 and 12 inside the high-frequency module 1, respectively.

[0037] The high-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 and 122 are connected to the RFIC 3 outside the high-frequency module 1 and are connected to the low-noise amplifiers 21 and 22 inside the high-frequency module 1, respectively.

[0038] The digital control terminal 130 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving digital control signals from the RFIC 3. The digital control terminal 130 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 60 inside the high-frequency module 1.

[0039] The power amplifier 11 is included in the power amplification circuit 10 and is connected between the high-frequency input terminal 111 and the filter 31. Specifically, the input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111. The output terminal of the power amplifier 11 is connected to the filter 31 via the switch 501. The power amplifier 11 can amplify the transmission signal of band A using power supplied from a power source (not shown).

[0040] The power amplifier 12 is included in the power amplification circuit 10 and is connected between the high-frequency input terminal 112 and the filters 32 and 35. Specifically, the input terminal of the power amplifier 12 is connected to the high-frequency input terminal 112. The output terminal of the power amplifier 12 is connected to the filter 32 via switch 502 and to the filter 35 via switch 509. The power amplifier 12 can amplify the transmission signals of bands B and C using power supplied from a power source (not shown). The power amplifier 12 may be divided into two power amplifiers, for example, one power amplifier for amplifying the transmission signal of band B and the other for amplifying the transmission signal of band C.

[0041] Each of the power amplifiers 11 and 12 may be composed of multiple amplifiers. For example, each of the power amplifiers 11 and 12 may be a multi-stage amplifier including multiple amplifiers connected in series. Alternatively, each of the power amplifiers 11 and 12 may be a differential or balanced power amplifier or Doherty amplifier including multiple amplifiers connected in parallel.

[0042] The low-noise amplifier 21 is included in the low-noise amplification circuit 20 and is connected between the filter 36 and the high-frequency output terminal 121. Specifically, the input end of the low-noise amplifier 21 is connected to the filter 36 via the switch 512. The output end of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 can amplify the received signal in band A using the power supplied from a power source (not shown). Note that the low-noise amplifier 21 may not be included in the high-frequency module 1. In this case, the low-noise amplifier 21 may be connected between the high-frequency module 1 and the RFIC 3 or may be included in the RFIC 3.

[0043] The low-noise amplifier 22 is included in the low-noise amplification circuit 20 and is connected between the filters 32 and 33 and the high-frequency output terminal 122. Specifically, the input end of the low-noise amplifier 22 is connected to the filter 32 via the switches 510 and 506 and is connected to the filter 33 via the switch 511. The output end of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signals in bands B and C using the power supplied from a power source (not shown).

[0044] Note that the low-noise amplifier 22 may be divided into two low-noise amplifiers respectively connected to the filters 32 and 33. In this case, the switches 510 and 511 may not be included in the high-frequency module 1.

[0045] The filter 31 is an example of a first filter and is a band-pass filter having a passband including the transmission band (A-Tx) of band A. The filter 31 can pass the signals within the transmission band of band A and can attenuate the signals outside the transmission band of band A. One end of the filter 31 is connected to the switch 503. The other end of the filter 31 is connected to the switch 501.

[0046] Filter 32 is an example of a second filter and is a band-pass filter having a pass band including the transmission band and the reception band (B - TRx) of band B. Filter 32 can pass signals within the transmission band and the reception band of band B and can attenuate signals outside the transmission band and the reception band of band B. One end of filter 32 is connected to switch 504. The other end of filter 32 is connected to switches 502 and 506.

[0047] Filter 33 is an example of a third filter and is a band-pass filter having a pass band including the reception band (C - Rx) of band C. Filter 33 can pass signals within the reception band of band C and can attenuate signals outside the reception band of band C. One end of filter 33 is connected to switch 505. The other end of filter 33 is connected to switch 511.

[0048] Filter 35 is an example of a fifth filter and is a band-pass filter having a pass band including the transmission band (C - Tx) of band C. Filter 35 can pass signals within the transmission band of band C and can attenuate signals outside the transmission band of band C. One end of filter 35 is connected to switch 505. The other end of filter 35 is connected to switch 509. Note that filter 35 may not be included in high-frequency module 1.

[0049] Filter 36 is a band-pass filter having a pass band including the reception band (A - Rx) of band A. Filter 36 can pass signals within the reception band of band A and can attenuate signals outside the reception band of band A. One end of filter 36 is connected to switch 503. The other end of filter 36 is connected to switch 512. Note that filter 36 may not be included in high-frequency module 1.

[0050] Note that filters 31, 32, 33, 35, and 36 are not limited to band-pass filters. Some or all of filters 31, 32, 33, 35, and 36 may be band-elimination filters, high-pass filters, low-pass filters, or any combination thereof.

[0051] Switch 501 is an example of a first switch and is an SPST (Single-Pole Single-Throw) type switch included in semiconductor component 41. Switch 501 is connected between the power amplifier 11 and the filter 31. Specifically, one end of switch 501 is connected to the power amplifier 11, and the other end of switch 501 is connected to the filter 31. Switch 501 can switch the connection and disconnection between the power amplifier 11 and the filter 31 based on a digital control signal supplied, for example, from RFIC 3.

[0052] Switch 502 is an example of a second switch and is an SPST type switch included in semiconductor component 41. Switch 502 is connected between the power amplifier 12 and the filter 32. Specifically, one end of switch 502 is connected to the power amplifier 12, and the other end of switch 502 is connected to the filter 32. Switch 502 can switch the connection and disconnection between the power amplifier 12 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0053] Switch 503 is an example of a third switch and is an SPST type switch included in semiconductor component 42. Switch 503 is connected between the antenna connection terminal 101 and filters 31 and 36. Specifically, one end of switch 503 is connected to the antenna connection terminal 101, and the other end of switch 503 is connected to filters 31 and 36. Switch 503 can switch the connection and disconnection between the antenna connection terminal 101 and filters 31 and 36 based on, for example, a digital control signal supplied from RFIC 3.

[0054] Switch 504 is an example of a fourth switch and is an SPST type switch included in semiconductor component 42. Switch 504 is connected between the antenna connection terminal 102 and the filter 32. Specifically, one end of switch 504 is connected to the antenna connection terminal 102, and the other end of switch 504 is connected to the filter 32. Switch 504 can switch the connection and disconnection between the antenna connection terminal 102 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0055] Switch 505 is an example of a fifth switch and is an SPST type switch included in semiconductor component 42. Switch 505 is connected between the antenna connection terminal 102 and filters 33 and 35. Specifically, one end of switch 505 is connected to the antenna connection terminal 102, and the other end of switch 505 is connected to filters 33 and 35. Switch 505 can switch the connection and disconnection between the antenna connection terminal 102 and filters 33 and 35 based on, for example, a digital control signal supplied from RFIC 3.

[0056] Switch 506 is an example of a sixth switch and is an SPST type switch included in semiconductor component 42. Switch 506 is connected between the low-noise amplifier 22 and the filter 32. Specifically, one end of switch 506 is connected to the low-noise amplifier 22 via switch 510, and the other end of switch 506 is connected to the filter 32. Switch 506 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0057] Switch 509 is an example of a ninth switch and is an SPST type switch included in semiconductor component 41. Switch 509 is connected between the power amplifier 12 and the filter 35. Specifically, one end of switch 509 is connected to the power amplifier 12, and the other end of switch 509 is connected to the filter 35. Switch 509 can switch the connection and disconnection between the power amplifier 12 and the filter 35 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 509 does not necessarily have to be included in the high-frequency module 1.

[0058] Switch 510 is an example of a tenth switch and is an SPST type switch included in the low-noise amplifier circuit 20. Switch 510 is connected between the low-noise amplifier 22 and the filter 32. Specifically, one end of switch 510 is connected to the low-noise amplifier 22, and the other end of switch 510 is connected to the filter 32 via switch 506. Switch 510 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 32 based on a digital control signal supplied, for example, from RFIC 3. Note that switch 510 does not necessarily have to be included in the high-frequency module 1.

[0059] Switch 511 is an example of an eleventh switch and is an SPST type switch included in the low-noise amplifier circuit 20. Switch 511 is connected between the low-noise amplifier 22 and the filter 33. Specifically, one end of switch 511 is connected to the low-noise amplifier 22, and the other end of switch 511 is connected to the filter 33. Switch 511 can switch the connection and disconnection between the low-noise amplifier 22 and the filter 33 based on a digital control signal supplied, for example, from the RFIC 3. Note that switch 511 does not necessarily have to be included in the high-frequency module 1.

[0060] Switch 512 is an SPST type switch included in the low-noise amplification circuit 20. Switch 512 is connected between the low-noise amplifier 21 and the filter 36. Specifically, one end of switch 512 is connected to the low-noise amplifier 21, and the other end of switch 512 is connected to the filter 36. Switch 512 can switch the connection and disconnection between the low-noise amplifier 21 and the filter 36 based on a digital control signal supplied, for example, from the RFIC 3. Note that switch 512 does not necessarily have to be included in the high-frequency module 1.

[0061] The PA control circuit 60 can control the power amplifiers 11 and 12. Specifically, the PA control circuit 60 outputs a control signal to the power amplification circuit 10 for controlling the power amplifiers 11 and 12 based on a digital control signal supplied from, for example, the RFIC 3. This controls, for example, the bias current supplied to the power amplifiers 11 and 12. Note that the PA control circuit 60 does not necessarily have to be included in the high-frequency module 1.

[0062] [1.3. Frequency Bands] The frequency bands A, B, and C supported by the high-frequency module 1 will be described below.

[0063] Bands A, B, and C are frequency bands for communication systems built using Radio Access Technology (RAT). Bands A, B, and C are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, 2GGSM (2nd Generation Global System for Mobile communications) systems, and WLAN (Wireless Local Area Network) systems.

[0064] Band A is an example of the first band, and is an FDD band, a TDD band, or a SUL (Supplementary Uplink) band. Band A can be Band 8 or Band 28 for LTE, or n8 or n28 for 5GNR. However, Band A is not limited to these bands.

[0065] Band B is an example of a second TDD band and is a TDD band. Band B can be Band 39 for LTE or n39 for 5GNR. Alternatively, Band B may be Band 40 or Band 41 for LTE, or n40 or n41 for 5GNR. However, Band B is not limited to these bands.

[0066] Band C is an example of a third band, and is an FDD band, TDD band, or SDL (Supplementary Downlink) band. Bands A and C are a band combination that allows simultaneous communication. Specifically, transmission of signals in Band A and reception of signals in Band C can be performed simultaneously. Also, the harmonic band of the transmission band of Band A overlaps at least partially with the reception band of Band C. For example, if Band A is Band 8 or n8, Band C can be Band 3 for LTE or n3 for 5GNR. Or, for example, if Band A is Band 28 or n28, Band C can be Band 1 for LTE or n1 for 5GNR. Note that Band C is not limited to these bands.

[0067] [1.4. Communication Mode of High-Frequency Module 1] Next, the communication mode of the high-frequency module 1 according to this embodiment will be described.

[0068] [1.4.1. First Mode] First, the first mode, which is included in the multiple communication modes of the high-frequency module 1, will be explained with reference to Figure 3. Figure 3 is a diagram for explaining the first mode of the high-frequency module 1 according to this embodiment. In Figure 3, dashed arrows represent signal paths.

[0069] The first mode is a communication mode for simultaneously transmitting signals in band A and receiving signals in band C. In the first mode, switches 501, 503, 505, and 511 are closed, and switches 502, 504, 506, 509, 510, and 512 are opened.

[0070] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 501, filter 31, switch 503, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 505, filter 33, switch 511, low-noise amplifier 22, and high-frequency output terminal 122.

[0071] In this case, since the switch 506 is included in semiconductor component 42 rather than semiconductor component 41, leakage of the band A transmission signal from the band A transmission path within semiconductor component 41 to the band C reception path via the switch 506 is reduced.

[0072] [1.4.2. Second Mode (Transmission State)] Next, the transmission state of the second mode, which is included in the multiple communication modes of the high-frequency module 1, will be explained with reference to Figure 4. Figure 4 is a diagram illustrating the transmission state of the second mode of the high-frequency module 1 according to this embodiment. In Figure 4, dashed arrows represent signal paths.

[0073] The second mode is a communication mode for transmitting and receiving Band B signals in TDD mode. Here, we will explain the connection state (transmission state) for transmitting Band B signals in the second mode.

[0074] In the second mode of transmission, switches 502 and 504 are closed, and switches 501, 503, 505, 506, and 509-512 are opened. As a result, the band B transmission signal is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 502, filter 32, switch 504, and antenna connection terminal 102.

[0075] [1.4.3. Second Mode (Reception State)] Next, the reception state of the second mode, which is included in the multiple communication modes of the high-frequency module 1, will be explained with reference to Figure 5. Figure 5 is a diagram illustrating the reception state of the second mode of the high-frequency module 1 according to this embodiment. In Figure 5, dashed arrows represent signal paths.

[0076] As mentioned above, the second mode is a communication mode for transmitting and receiving Band B signals in TDD mode. Here, we will explain the connection state (reception state) for receiving Band B signals in the second mode.

[0077] In the second mode of reception, switches 504, 506, and 510 are closed, and switches 501-505, 509, 511, and 512 are opened. As a result, the received signal for band B is transmitted from antenna 2b to RFIC 3 via antenna connection terminal 102, switch 504, filter 32, switch 506, switch 510, low-noise amplifier 22, and high-frequency output terminal 122.

[0078] The multiple communication modes of the high-frequency module 1 are not limited to the first and second modes described above. For example, the multiple communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band A. Also, for example, the multiple communication modes of the high-frequency module 1 may include a mode for simultaneously transmitting and receiving signals in band C. Furthermore, for example, in addition to transmitting signals in band A and receiving signals in band C, the multiple communication modes of the high-frequency module 1 may include a mode for simultaneously receiving signals in band A and / or transmitting signals in band C.

[0079] [1.5. Implementation Examples of High-Frequency Module 1] Next, two implementation examples of the high-frequency module 1 having the circuit configuration described above will be explained with reference to the drawings.

[0080] [1.5.1. Example of double-sided mounting] First, an example of double-sided mounting of the high-frequency module 1 will be described with reference to Figures 6 to 8. Figure 6 is a plan view of the high-frequency module 1 according to this embodiment. Figure 7 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side looking through to the main surface 90b side of the module substrate 90. Figure 8 is a cross-sectional view of the high-frequency module 1 according to this embodiment. The cross-section of the high-frequency module 1 in Figure 8 is the cross-section along the line viiii-viiii in Figures 6 and 7.

[0081] In Figures 6 and 7, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member are omitted so that the arrangement of each component can be easily understood. Also, in Figures 6 to 8, each component is labeled, but in reality, these labels do not need to be attached to each component.

[0082] Figures 6 to 8 show exemplary configurations, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0083] In addition to the multiple circuit components shown in Figure 2, the high-frequency module 1 includes a module substrate 90, resin members 91 and 92, a metal shield 93, and multiple external connection terminals 94.

[0084] The module substrate 90 has two opposing main surfaces 90a and 90b. The main surfaces 90a and 90b are examples of a first main surface and a second main surface, respectively. Wiring and via electrodes (not shown) are formed inside and / or on the module substrate 90.

[0085] As the module substrate 90, for example, a low-temperature co-fired ceramics (LTCC) substrate or a high-temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board can be used, but is not limited to these.

[0086] The power amplifier circuit 10 (PA) is a semiconductor component including power amplifiers 11 and 12, and is arranged on the main surface 90a of the module substrate 90. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplifier circuit 10 can be composed of heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplifier circuit 10 can be composed of HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Alternatively, silicon single crystal (Si) can be used as the semiconductor material for the power amplifier circuit 10. In this case, some or all of the power amplifiers 11 and 12 included in the power amplification circuit 10 may be made of CMOS (Complementary Metal Oxide Semiconductor) and may be manufactured by an SOI (Silicon on Insulator) process.

[0087] The power amplification circuit 10 may be divided into multiple semiconductor components. For example, the power amplification circuit 10 may be divided into a semiconductor component including a power amplifier 11 and a semiconductor component including a power amplifier 12.

[0088] The low-noise amplification circuit 20 (LNA) is a semiconductor component that includes low-noise amplifiers 21 and 22 and switches 510 to 512, and is arranged on the main surface 90b of the module substrate 90. As the semiconductor material for the low-noise amplification circuit 20, for example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used. Some or all of the low-noise amplifiers 21 and 22 included in the low-noise amplification circuit 20 can be made up of field-effect transistors (FETs). Furthermore, some or all of the switches 510 to 512 included in the low-noise amplification circuit 20 can also be made up of FETs.

[0089] The low-noise amplification circuit 20 (LNA) may be divided into multiple semiconductor components. For example, the low-noise amplification circuit 20 may be divided into a semiconductor component including low-noise amplifiers 21 and 22 and a semiconductor component including switches 510 to 512.

[0090] Filters 31 (A-Tx), 32 (B-TRx), 33 (C-Rx), 35 (C-Tx), and 36 (A-Rx) are arranged on the main surface 90a of the module substrate 90. Filters 31-33, 35, and 36 may be, and are not limited to, surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof.

[0091] Furthermore, some or all of filters 31-33, 35, and 36 may be in contact with the metal shield 93. This allows some or all of filters 31-33, 35, and 36 to release heat through the metal shield 93, thereby suppressing performance degradation due to heat.

[0092] Semiconductor component 41 (BSSW) is an example of a first semiconductor component and includes switches 501, 502, and 509, and is arranged on the main surface 90a of the module substrate 90. Semiconductor component 42 (ASW) is an example of a second semiconductor component and includes switches 503 to 506, and is arranged on the main surface 90b of the module substrate 90.

[0093] Each of the semiconductor components 41 and 42 may be divided into multiple semiconductor components. For example, semiconductor component 41 may be divided into a semiconductor component including switch 501 and a semiconductor component including switches 502 and 509. Also, for example, semiconductor component 42 may be divided into a semiconductor component including switch 503 and a semiconductor component including switches 504 and 505.

[0094] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 41 and 42. Some or all of the multiple switches included in semiconductor components 41 and 42 can be made up of FETs.

[0095] The arrangement of semiconductor components 41 and 42 and filters 32, 33, and 35 in a plan view of the module substrate 90 will be described below.

[0096] The semiconductor component 42 is positioned closer to the filter 32 than the semiconductor component 41. Furthermore, the filter 32 is positioned closer to the semiconductor component 42 than the filter 33. Also, the filter 32 is positioned closer to the semiconductor component 42 than the filter 35. In addition, in a plan view of the module substrate 90, the filter 32 overlaps the semiconductor component 42 at least partially. By positioning the filter 32 closer to the semiconductor component 42 in this way, the total length of the wiring between filters 32, 33, and 35 and semiconductor components 41 and 42 can be shortened.

[0097] The PA control circuit 60 (PAC) is arranged on the main surface 90a of the module substrate 90. The PA control circuit 60 may also be included in the semiconductor component 41.

[0098] The resin member 91 covers at least a portion of the components on the main surface 90a of the module substrate 90. The material of the resin member 91 can be, for example, epoxy resin, but is not limited thereto. The resin member 91 has the function of ensuring the reliability of the components on the main surface 90a, such as mechanical strength and moisture resistance. Note that the resin member 91 does not necessarily have to be included in the high-frequency module 1.

[0099] The resin member 92 covers at least a portion of the components on the main surface 90b of the module substrate 90. The material of the resin member 92 can be, for example, epoxy resin, but is not limited thereto. The resin member 92 has the function of ensuring the reliability of the components on the main surface 90b, such as mechanical strength and moisture resistance. Note that the resin member 92 does not necessarily have to be included in the high-frequency module 1.

[0100] The metal shield 93 is a thin metal film formed on the surfaces of the resin members 91 and 92, for example, by sputtering. The metal shield 93 is formed to cover at least a portion (the top and side surfaces) of the surfaces of the resin members 91 and 92. The metal shield 93 is connected to ground and can suppress external noise from entering the electronic components constituting the high-frequency module 1, and from noise generated in the high-frequency module 1 interfering with other modules or other equipment. Note that the metal shield 93 does not necessarily have to be included in the high-frequency module 1.

[0101] The multiple external connection terminals 94 include antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, a digital control terminal 130, and a ground terminal. The multiple external connection terminals 94 are electrically connected to input / output terminals and / or ground terminals, etc., on a mother board (not shown) located in the negative z-axis direction of the high-frequency module 1, outside the high-frequency module 1. In addition, the multiple external connection terminals 94 are electrically connected to components within the module board 90 inside the high-frequency module 1.

[0102] [1.5.2. Single-Sided Mounting Example] Next, an example of single-sided mounting of the high-frequency module 1 will be described with reference to Figures 9 and 10. Figure 9 is a plan view of the high-frequency module 1 according to this embodiment. Figure 10 is a plan view of the high-frequency module 1 according to this embodiment, and is a view from the positive z-axis side towards the main surface 90b of the module substrate 90.

[0103] In Figure 9, the illustration of the resin member covering multiple circuit components and the metal shield covering the resin member are omitted so that the arrangement of each component can be easily understood. Also, although each component in Figure 9 is labeled, these labels do not necessarily have to be attached to the actual components.

[0104] Figures 9 and 10 represent exemplary configurations, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as limiting.

[0105] In this implementation example, the low-noise amplifier circuit 20 and the semiconductor component 42 are arranged on the main surface 90a of the module substrate 90. Similar to the double-sided mounting example described above, in a plan view of the module substrate 90, the semiconductor component 42 is positioned closer to the filter 32 than the semiconductor component 41. Also, in a plan view of the module substrate 90, the filter 32 is positioned closer to the semiconductor component 42 than the filter 33. Furthermore, in a plan view of the module substrate 90, the filter 32 is positioned closer to the semiconductor component 42 than the filter 35.

[0106] [1.6. Summary] As described above, the high-frequency module 1 according to this embodiment comprises a module board 90, a power amplification circuit 10 disposed on the module board 90, a low-noise amplification circuit 20 disposed on the module board 90, a filter 31 disposed on the module board 90 and having a passband including the transmission band of band A, a filter 32 disposed on the module board 90 and having a passband including band B (TDD band), a filter 33 disposed on the module board 90 and having a passband including the reception band of band C, and semiconductor components 41 disposed on the module board 90. The semiconductor component 41 includes a switch 501 connected between the filter 31 and the power amplifier circuit 10, and a switch 502 connected between the filter 32 and the power amplifier circuit 10. The semiconductor component 42 includes a switch 503 connected between the filter 31 and the antenna connection terminal 101, a switch 504 connected between the filter 32 and the antenna connection terminal 102, a switch 505 connected between the filter 33 and the antenna connection terminal 102, and a switch 506 connected between the filter 32 and the low-noise amplifier circuit 20.

[0107] According to this, of the switches (502 and 506) used for switching between transmitting and receiving in band B (TDD band), switch 506, which is connected to the low-noise amplification circuit 20, is included in semiconductor component 42. Therefore, compared to when switch 506 is included in semiconductor component 41, leakage of the transmitted signal of band A amplified by the power amplifier 11 to the low-noise amplification circuit 20 via switch 506 can be reduced, and a decrease in the receiving sensitivity of band B and / or C can be suppressed.

[0108] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the receiving bandwidth of band C may at least partially overlap with the harmonic bandwidth of the transmitting bandwidth of band A, and bands A and C may be a band combination capable of simultaneous communication.

[0109] According to this, reducing the leakage of the transmitted signal from band A to the low-noise amplification circuit 20 is effective in suppressing the decrease in the receiving sensitivity of band C.

[0110] For example, in the high-frequency module 1 according to this embodiment, in the first mode for simultaneously transmitting a signal in band A and receiving a signal in band C, switches 501, 503, and 505 may be closed and switches 502, 504, and 506 may be open; in the second mode transmission state for transmitting and receiving a signal in band B in TDD mode, switches 502 and 504 may be closed and switches 501, 503, 505, and 506 may be open; and in the second mode reception state, switches 504 and 506 may be closed and switches 501, 502, 503, and 505 may be open.

[0111] According to this, the high-frequency module 1 can simultaneously transmit signals in band A and receive signals in band C, and can transmit and receive signals in band B in TDD mode.

[0112] Furthermore, for example, in the high-frequency module 1 according to this embodiment, in a plan view of the module substrate 90, semiconductor component 42 may be placed closer to the filter 32 than semiconductor component 41.

[0113] The semiconductor component 42 is connected to both ends of the filter 32 by at least two wires. On the other hand, the semiconductor component 41 is connected to one end of the filter 32 by at least one wire. Therefore, by positioning the semiconductor component 42 closer to the filter 32 than the semiconductor component 41, the total length of the wires between the filter 32 and the semiconductor components 41 and 42 can be shortened.

[0114] Furthermore, for example, in the high-frequency module 1 according to this embodiment, in a plan view of the module substrate 90, the filter 32 may be positioned closer to the semiconductor component 42 than the filter 33.

[0115] Filter 32 is connected to the semiconductor component 42 by at least two wires at both ends. On the other hand, filter 33 is connected to the semiconductor component 42 by at least one wire at one end. Therefore, by positioning filter 32 closer to the semiconductor component 42 than filter 33, the total length of the wiring between filters 32 and 33 and the semiconductor component 42 can be shortened.

[0116] For example, in the high-frequency module 1 according to this embodiment, the module substrate 90 may have a first main surface and a second main surface facing each other, the filter 32 may be arranged on the first main surface, the semiconductor component 42 may be arranged on the second main surface, and in a plan view of the module substrate 90, the filter 32 may at least partially overlap the semiconductor component 42.

[0117] According to this, when the filter 32 and the semiconductor component 42 are arranged on two opposing main surfaces, the distance between the filter 32 and the semiconductor component 42 can be shortened, and the wiring length between the filter 32 and the semiconductor component 42 can be shortened. In particular, since both ends of the filter 32 are connected to the semiconductor component 42 by at least two wires, the effect of shortening the wiring length is significant.

[0118] For example, the high-frequency module 1 according to this embodiment may further include a filter 35 having a passband that includes the transmission band of band C, the semiconductor component 41 may further include a switch 509 connected between the power amplification circuit 10 and the filter 35, and the switch 505 may further be connected between the filter 35 and the antenna connection terminal 102.

[0119] According to this, the high-frequency module 1 can support the transmission of signals in band C.

[0120] Furthermore, for example, in the high-frequency module 1 according to this embodiment, in a plan view of the module substrate 90, the filter 32 may be positioned closer to the semiconductor component 42 than the filter 35.

[0121] Filter 32 is connected to the semiconductor component 42 by at least two wires at both ends. On the other hand, filter 35 is connected to the semiconductor component 42 by at least one wire at one end. Therefore, by positioning filter 32 closer to the semiconductor component 42 than filter 35, the total length of the wiring between filters 32 and 35 and the semiconductor component 42 can be shortened.

[0122] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the low-noise amplification circuit 20 may include a low-noise amplifier 22, a switch 510 connected between the switch 506 and the low-noise amplifier 22, and a switch 511 connected between the filter 33 and the low-noise amplifier 22.

[0123] According to this, the low-noise amplifier 22 can amplify the received signals of bands B and C, and the number of low-noise amplifiers can be reduced compared to when separate low-noise amplifiers are provided for bands B and C. In addition, since the low-noise amplifier 22 and switches 510 and 511 are included in the low-noise amplification circuit 20, the number of components can be reduced compared to when the low-noise amplifier 22 and switches 510 and 511 are included in separate components.

[0124] For example, in the high-frequency module 1 according to this embodiment, band A may be Band 8 for LTE or n8 for 5GNR, band B may be Band 39 for LTE or n39 for 5GNR, and band C may be Band 3 for LTE or n3 for 5GNR.

[0125] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0126] For example, in the high-frequency module 1 according to this embodiment, band A may be Band 28 for LTE or n28 for 5GNR, band B may be Band 39 for LTE or n39 for 5GNR, and band C may be Band 1 for LTE or n1 for 5GNR.

[0127] According to this, the high-frequency module 1 can be used in an LTE system and / or a 5GNR system.

[0128] Furthermore, the communication device 5 according to this embodiment includes an RFIC 3 configured to process high-frequency signals, and a high-frequency module 1 configured to transmit high-frequency signals between the RFIC 3 and antennas 2a and 2b.

[0129] According to this, the communication device 5 can achieve the same effect as the high-frequency module 1.

[0130] (Embodiment 2) Next, Embodiment 2 will be described. This embodiment differs from Embodiment 1 in that a filter for Band D is added, and a part of the transmission path for Band B is used as the transmission path for Band D. The following will describe this embodiment, focusing on the differences from Embodiment 1.

[0131] The communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it is equipped with a high-frequency module 1A instead of the high-frequency module 1. Therefore, the illustration and description of the configuration of the communication device 5 are omitted.

[0132] [2.1. Circuit Configuration of High-Frequency Module 1A] The circuit configuration of the high-frequency module 1A according to this embodiment will be described with reference to Figure 11. Figure 11 is a circuit diagram of the high-frequency module 1A according to this embodiment.

[0133] Note that Figure 11 shows an exemplary configuration, and the high-frequency module 1A can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted as limiting.

[0134] The high-frequency module 1A includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32, 33, 34, 35 and 36, switches 501, 502, 503, 504, 505, 506, 507, 508, 509, 510, 511 and 512, PA control circuit 60, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and a digital control terminal 130.

[0135] Filter 34 is an example of a fourth filter and is a low-pass filter having a passband that includes the transmission bandwidth (D-Tx) of band D. Filter 34 can pass signals within the transmission bandwidth of band D and attenuate signals outside the transmission bandwidth of band D. Specifically, one end of filter 34 is connected to switches 507 and 508, and the other end of filter 34 is connected to switch 502.

[0136] The filter 34 is not limited to a low-pass filter. The filter 34 may be a band-pass filter, a band-elimination filter, a high-pass filter, or any combination thereof. The filter 34 does not necessarily have to be included in the high-frequency module 1A.

[0137] Switch 507 is an example of a seventh switch and is an SPST type switch included in semiconductor component 42A. Switch 507 is connected between the antenna connection terminal 102 and the filter 34. Specifically, one end of switch 507 is connected to the antenna connection terminal 102 without going through the filter 32, and the other end of switch 507 is connected to the filter 34. Switch 507 can switch between a connection and a disconnection between the antenna connection terminal 102 and the filter 34 without going through the filter 32, for example, based on a digital control signal supplied from RFIC 3.

[0138] Switch 508 is an example of an eighth switch and is an SPST type switch included in semiconductor component 42A. Switch 508 is connected between the antenna connection terminal 102 and the filter 34. Specifically, one end of switch 508 is connected to the antenna connection terminal 102 via filter 32 and switch 504, and the other end of switch 508 is connected to filter 34. Switch 508 can switch between connection and disconnection between the antenna connection terminal 102 and filter 34 via filter 32 based on a digital control signal supplied, for example, from RFIC 3.

[0139] [2.2. Frequency Bands] Since bands A to C are the same as in Embodiment 1, band D will be described below.

[0140] Band D, like Bands A through C, is a frequency band for communication systems built using RAT. Band D is predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR systems, 4GLTE systems, WLAN systems, and 2GGSM systems.

[0141] Band D is an example of a fourth band, and is an FDD band, TDD band, or SUL band. The frequency band for 2GGSM can be used as Band D. However, Band D is not limited to the 2GGSM band.

[0142] The implementation example of the high-frequency module 1A according to this embodiment is the same as in Embodiment 1, except that a semiconductor component 42A including switches 503 to 508 is placed instead of the semiconductor component 42, and a filter 34 is placed on the module substrate 90. Therefore, its illustration and description are omitted.

[0143] [2.3. Communication Mode of High-Frequency Module 1A] Next, the communication mode of the high-frequency module 1A according to this embodiment will be described.

[0144] [2.3.1. First Mode] First, the first mode, which is included in the multiple communication modes of the high-frequency module 1A, will be explained with reference to Figure 12. Figure 12 is a diagram for explaining the first mode of the high-frequency module 1A according to this embodiment. In Figure 12, dashed arrows represent signal paths.

[0145] The first mode is a communication mode for simultaneously transmitting signals in band A and receiving signals in band C. In the first mode, switches 501, 503, 505, and 511 are closed, and switches 502, 504-510, and 512 are opened.

[0146] As a result, the transmission signal for band A is transmitted from RFIC 3 to antenna 2a via the high-frequency input terminal 111, power amplifier 11, switch 501, filter 31, switch 503, and antenna connection terminal 101. The reception signal for band C is transmitted from antenna 2b to RFIC 3 via the antenna connection terminal 102, switch 505, filter 33, switch 511, low-noise amplifier 22, and high-frequency output terminal 122.

[0147] In this case, since the switch 506 is included in semiconductor component 42A rather than semiconductor component 41, leakage of the band A transmission signal from the band A transmission path within semiconductor component 41 to the band C reception path via the switch 506 is reduced.

[0148] [2.3.2. Second Mode (Transmission State)] Next, the transmission state of the second mode, which is included in the multiple communication modes of the high-frequency module 1A, will be explained with reference to Figure 13. Figure 13 is a diagram for explaining the transmission state of the second mode of the high-frequency module 1A according to this embodiment. In Figure 13, dashed arrows represent signal paths.

[0149] The second mode is a communication mode for transmitting and receiving Band B signals in TDD mode. Here, we will explain the connection state (transmission state) during the time interval for transmitting Band B signals in the second mode.

[0150] In the second mode of transmission, switches 502, 504, and 508 are closed, and switches 501, 503, 505, 506, 507, and 509-512 are opened. As a result, the band B transmission signal is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 502, filter 34, switch 508, filter 32, switch 504, and antenna connection terminal 102.

[0151] [2.3.3. Second Mode (Reception State)] Next, the reception state of the second mode, which is included in the multiple communication modes of the high-frequency module 1A, will be explained with reference to Figure 14. Figure 14 is a diagram for explaining the reception state of the second mode of the high-frequency module 1A according to this embodiment. In Figure 14, dashed arrows represent signal paths.

[0152] As described above, the second mode is a communication mode for transmitting and receiving signals in Band B in TDD mode. Here, we will explain the connection state (reception state) during the time interval for receiving signals in Band B in the second mode.

[0153] In the second mode of reception, switches 504, 506, and 510 are closed, and switches 501-505, 507-509, 511, and 512 are opened. As a result, the received signal for band B is transmitted from antenna 2b to RFIC 3 via antenna connection terminal 102, switch 504, filter 32, switches 506 and 510, low-noise amplifier 22, and high-frequency output terminal 122.

[0154] [2.3.4. Third Mode] Next, the third mode, which is included in the multiple communication modes of the high-frequency module 1A, will be described with reference to Figure 15. Figure 15 is a diagram for explaining the third mode of the high-frequency module 1A according to this embodiment. In Figure 15, dashed arrows represent signal paths.

[0155] The third mode is a communication mode for transmitting signals in band D. In the third mode, switches 502 and 507 are closed, and switches 501, 503-506, and 508-512 are opened. As a result, the band D transmission signal is transmitted from RFIC 3 to antenna 2b via the high-frequency input terminal 112, power amplifier 12, switch 502, filter 34, switch 507, and antenna connection terminal 102.

[0156] The communication modes of the high-frequency module 1A are not limited to the first, second, and third modes described above. For example, the communication modes of the high-frequency module 1A may include a mode for simultaneously transmitting and receiving signals in band A. Also, for example, the communication modes of the high-frequency module 1A may include a mode for simultaneously transmitting and receiving signals in band C. Furthermore, for example, the communication modes of the high-frequency module 1A may include a mode for simultaneously transmitting signals in band A and receiving signals in band C, as well as a mode for simultaneously receiving signals in band A and / or transmitting signals in band C.

[0157] [2.4. Summary] As described above, in the high-frequency module 1A according to this embodiment, the semiconductor component 42A may further include a switch 507 connected between the switch 502 and the antenna connection terminal 102 without passing through the filter 32, and a switch 508 connected between the switch 502 and the filter 32.

[0158] According to this, switches 507 and 508 can be used to switch between a transmission path with filter 32 and a transmission path without filter 32. For example, by using the transmission path without filter 32 for transmitting 2G band signals and the transmission path with filter 32 for transmitting LTE / 5GNR band signals, the power amplifier 12 can be shared between the 2G band and the LTE / 5GNR band.

[0159] For example, the high-frequency module 1A according to this embodiment may further include a filter 34 connected between switch 502 and switch 507, and between switch 502 and switch 508, having a passband that includes the transmission bandwidth of band D.

[0160] According to this, filter 34 is connected to the transmission path without filter 32. Therefore, the quality of the transmitted signal in band D can be improved.

[0161] For example, in the high-frequency module 1A according to this embodiment, in a first mode for simultaneously transmitting a signal in band A and receiving a signal in band C, switches 501, 503, and 505 may be closed and switches 502, 504, 506, 507, and 508 may be open; in a second mode transmission state for transmitting and receiving a signal in band B in TDD mode, switches 502, 504, and 508 may be closed and switches 501, 503, 505, 506, and 507 may be open; in a second mode reception state, switches 504 and 506 may be closed and switches 501, 502, 503, 505, 507, and 508 may be open; and in a third mode for transmitting a signal in band D, switches 502 and 507 may be closed and switches 501, 503, 504, 505, 506, and 508 may be open.

[0162] According to this, the high-frequency module 1A can simultaneously transmit signals in band A and receive signals in band C, transmit and receive signals in band B in TDD mode, and transmit signals in band D.

[0163] (Other Embodiments) The high-frequency module and communication device according to the present invention have been described above based on embodiments, but the high-frequency module and communication device according to the present invention are not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by making various modifications to the above embodiments that a person skilled in the art can conceive of without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0164] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between the power amplifier 11 and the switch 501, and / or between the power amplifier 12 and switches 502 and 509. Also, for example, an impedance matching circuit may be inserted between the filter 32 and the switch 510, and / or between the filter 33 and the switch 511. Also, for example, a coupler may be connected between the switch 503 and the antenna connection terminal 101, and / or between switches 505 and 504 and the antenna connection terminal 102.

[0165] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end.

[0166] 1, 1A High-frequency module 2a, 2b Antenna 3 RFIC 4 BBIC 5 Communication device 10 Power amplifier circuit 11, 12 Power amplifier 20 Low-noise amplifier circuit 21, 22 Low-noise amplifier 31, 32, 33, 34, 35, 36 Filter 41, 42, 42A Semiconductor components 60 PA control circuit 90 Module board 90a, 90b Main surface 91, 92 Resin components 93 Metal shield 94 External connection terminals 101, 102 Antenna connection terminals 111, 112 High-frequency input terminals 121, 122 High-frequency output terminals 130 Digital control terminals 501, 502, 503, 504, 505, 506, 507, 508, 509, 510, 511, 512 Switch

Claims

Module board and A power amplification circuit arranged on the module board, A low-noise amplification circuit arranged on the module board, A first filter is placed on the module board and has a passband that includes the transmission bandwidth of the first band, A second filter is disposed on the module substrate and has a passband that includes a second TDD (Time Division Duplex) band, A third filter is disposed on the module board and has a passband that includes the receiving band of the third band, The module board comprises a first semiconductor component and a second semiconductor component arranged on the module board, The first semiconductor component is A first switch connected between the first filter and the power amplification circuit, The system includes a second switch connected between the second filter and the power amplification circuit, The second semiconductor component is, A third switch is connected between the first filter and the first antenna connection terminal, A fourth switch is connected between the second filter and the second antenna connection terminal, A fifth switch connected between the third filter and the second antenna connection terminal, The system includes a sixth switch connected between the second filter and the low-noise amplification circuit, High-frequency module. 　 The receiving bandwidth of the third band overlaps at least partially with the harmonic bandwidth of the transmitting bandwidth of the first band. The first band and the third band are a band combination that allows simultaneous communication. The high-frequency module according to claim 1. 　 In a first mode for simultaneously transmitting a signal in the first band and receiving a signal in the third band, the first switch, the third switch and the fifth switch are closed, and the second switch, the fourth switch and the sixth switch are open. In a second mode transmission state for transmitting and receiving signals in the second TDD band in TDD mode, the second switch and the fourth switch are closed, and the first switch, the third switch, the fifth switch and the sixth switch are open. In the receiving state of the second mode, the fourth switch and the sixth switch are closed, and the first switch, the second switch, the third switch and the fifth switch are open. The high-frequency module according to claim 1 or 2. 　 The aforementioned second semiconductor component further, A seventh switch is connected between the second switch and the second antenna connection terminal without passing through the second filter, The system includes an eighth switch connected between the second switch and the second filter, The high-frequency module according to claim 1 or 2. 　 The high-frequency module further includes a fourth filter connected between the second switch and the seventh switch, and between the second switch and the eighth switch, having a passband that includes the transmission bandwidth of the fourth band. The high-frequency module according to claim 4. 　 In a first mode for simultaneously transmitting a signal in the first band and receiving a signal in the third band, the first switch, the third switch and the fifth switch are closed, and the second switch, the fourth switch, the sixth switch, the seventh switch and the eighth switch are open. In a second mode transmission state for transmitting and receiving signals in the second TDD band in TDD mode, the second switch, the fourth switch and the eighth switch are closed, and the first switch, the third switch, the fifth switch, the sixth switch and the seventh switch are open. In the receiving state of the second mode, the fourth switch and the sixth switch are closed, and the first switch, the second switch, the third switch, the fifth switch, the seventh switch and the eighth switch are open. In a third mode for transmitting a fourth-band signal, the second switch and the seventh switch are closed, and the first switch, the third switch, the fourth switch, the fifth switch, the sixth switch and the eighth switch are open. The high-frequency module according to claim 4 or 5. 　 In a plan view of the module substrate, the second semiconductor component is positioned closer to the second filter than the first semiconductor component. A high-frequency module according to any one of claims 1 to 6. 　 In a plan view of the module substrate, the second filter is positioned closer to the second semiconductor component than the third filter. A high-frequency module according to any one of claims 1 to 7. The module substrate has a first main surface and a second main surface that face each other, The second filter is positioned on the first main surface, The second semiconductor component is arranged on the second main surface, In a plan view of the module substrate, the second filter overlaps at least partially with the second semiconductor component. A high-frequency module according to any one of claims 1 to 8. 　 The high-frequency module further comprises a fifth filter having a passband that includes the transmission bandwidth of the third band. The first semiconductor component further includes a ninth switch connected between the power amplifier circuit and the fifth filter, The fifth switch is further connected between the fifth filter and the second antenna connection terminal. A high-frequency module according to any one of claims 1 to 9. 　 In a plan view of the module substrate, the second filter is positioned closer to the second semiconductor component than the fifth filter. The high-frequency module according to claim 10. 　 The low-noise amplification circuit described above is Low-noise amplifier and A tenth switch is connected between the sixth switch and the low-noise amplifier, The system includes an eleventh switch connected between the third filter and the low-noise amplifier, A high-frequency module according to any one of claims 1 to 11. 　 The first band is Band 8 for LTE (Long Term Evolution), or n8 for 5GNR (5th Generation New Radio). The second TDD band is Band 39 for LTE, or n39 for 5GNR. The third band is Band 3 for LTE, or n3 for 5GNR. A high-frequency module according to any one of claims 1 to 12. 　 The first band is Band 28 for LTE, or n28 for 5GNR. The second TDD band is Band 39 for LTE, or n39 for 5GNR. The third band is Band 1 for LTE, or n1 for 5GNR. A high-frequency module according to any one of claims 1 to 12. 　 A signal processing circuit configured to process high-frequency signals, A high-frequency module according to any one of claims 1 to 14, configured to transmit the high-frequency signal between the signal processing circuit and the antenna, comprising: Communication device.

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