Composition for forming protective film and semiconductor substrate manufacturing method

Abstract

Provided are a composition for forming a protective film having favorable storage stability and removability of a coating film, and excellent in etching solution resistance of the protective film, and a semiconductor substrate manufacturing method. The present invention is a composition for forming a protective film on a semiconductor substrate peripheral edge portion, wherein the composition contains polysiloxane and a solvent, and the polysiloxane has a first structural unit represented by formula (1) below. (In formula (1) above, X is a monovalent group represented by any one of formulae (1-1) to (1-9) below. a represents an integer of 1 to 3. If a is 2 or greater, the plurality of X's are identical or different from each other. R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom. b represents an integer of 0 to 2. If b is 2, the two R1s are identical or different from each other. Where, a + b is 3 or less.)

Claims

1. A composition for forming a protective film on the peripheral portion of a semiconductor substrate, comprising a polysiloxane and a solvent, wherein the polysiloxane has a first structural unit represented by the following formula (1), and is a composition for forming a protective film. (In the above formula (1), X is a monovalent group represented by any one of the following formulas (1-1) to (1-9). a is an integer of 1 to 3. When a is 2 or more, a plurality of Xs are the same or different. R １ is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group or a halogen atom. b is an integer of 0 to 2. When b is 2, the two Rs １ are the same or different from each other. However, a + b is 3 or less.) (In the above formulas (1-1) to (1-9), L 1 is each independently a single bond or a divalent organic group having 1 to 20 carbon atoms. R Ａ is each independently a substituted or unsubstituted monovalent hydrocarbon group having 4 to 20 carbon atoms. R Ｂ１ is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms or a hydrogen atom, and R Ｂ２ is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or R Ｂ１ and R Ｂ２ are combined with each other to form a heterocyclic structure having 3 to 20 carbon atoms together with the carbon atom and oxygen atom to which they are bonded. R C is each independently a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R D is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted monovalent hydrocarbylcarbonyl group having 2 to 20 carbon atoms. R E is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. R ２ to R ７ are each independently a substituted or unsubstituted hydrocarbon group having 1 to 10 carbon atoms or a hydrogen atom. X 1 is each independently an oxygen atom or a sulfur atom. n is an integer of 1 to 3. * is a bond to the silicon atom in the above formula (1).) 2. The protective film-forming composition according to claim 1, wherein the polysiloxane has a second structural unit represented by the following formula (2) (which is different from the first structural unit). (In the above formula (2), R ２１ R is a hydroxyl group, a halogen atom, or an alkoxy group having 1 to 3 carbon atoms. c is an integer from 0 to 3. If c is 2 or more, multiple R ２１ They are either the same or different.

3. The protective film-forming composition according to claim 1, wherein the content of the first structural unit in the total structural units constituting the polysiloxane is 10 mol% or more and 90 mol% or less.

4. The protective film-forming composition according to claim 2, wherein the content of the second structural unit in the total structural units constituting the polysiloxane is 10 mol% or more and 70 mol% or less.

5. A method for manufacturing a semiconductor substrate, comprising the step of directly or indirectly coating only the peripheral edge of the substrate with the protective film-forming composition described in any one of claims 1 to 4.

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