Bulk acoustic wave device including seed layer and piezoelectric layer with engineered region
The BAW device with an engineered piezoelectric layer and seed/raised frame layer suppresses frame modes, enhancing performance by increasing quality factor (Q) and reducing energy losses.
WO2026136047A1PCT designated stage Publication Date: 2026-06-25SKYWORKS GLOBAL PTE LTD +1
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Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SKYWORKS GLOBAL PTE LTD
- Filing Date
- 2025-12-08
- Publication Date
- 2026-06-25
AI Technical Summary
Technical Problem
Existing bulk acoustic wave (BAW) devices face challenges in achieving high quality factor (Q) and suppressing spurious modes while meeting performance specifications.
Method used
The BAW device incorporates an engineered region with a piezoelectric layer having a lower effective piezoelectric coefficient and a seed layer or raised frame layer, which suppresses frame modes and maintains electromechanical coupling, thereby increasing Q and reducing energy losses.
Benefits of technology
The engineered region enhances BAW device performance by suppressing frame modes and increasing quality factor (Q), leading to improved energy efficiency and reduced insertion losses.
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Smart Images
Figure US2025058631_25062026_PF_FP_ABST
Abstract
Aspects of this disclosure relate to a bulk acoustic wave that includes a piezoelectric having a lower magnitude effective piezoelectric coefficient in the engineered region than in a main acoustically active region. The bulk acoustic wave device includes a seed layer positioned between an electrode and the piezoelectric layer in the engineered region. A resonance associated with the engineered region can be at a lower frequency than a resonant frequency of the main acoustically active region. Related bulk acoustic wave dies, filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
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