Perforated glass substrate for semiconductor package

Abstract

The present invention addresses the problem of providing a glass substrate that is not easily damaged when used as an interposer or a core substrate of a package substrate. A perforated glass substrate G1, G2 according to the present invention comprises: a first main surface G1a, G2a; a second main surface G1b, G2b that is on the reverse side from the first main surface G1a, G2a; and a hole that is formed in at least one main surface of the first main surface G1a, G2a and the second main surface G1b, G2b. The perforated glass substrate G1, G2 is characterized in that: the hole comprises a non-through hole 2 that is formed in at least one main surface of the first main surface G2a and the second main surface G2b, and / or a through hole 1 that penetrates the glass substrate between the first main surface G1a and the second main surface G1b; and the perforated glass substrate G1, G2 has a fracture toughness value of 0.8 MPa∙m0.5 or more.

Description

Perforated glass substrates for semiconductor packaging

[0001] This invention relates to a perforated glass substrate for semiconductor packaging.

[0002] Development is underway for semiconductor package substrates that mount multiple semiconductor elements on a single electronic substrate (core substrate). Glass has excellent dimensional stability and low dielectric properties. Therefore, using glass as the material for the core substrate or the interposer that connects the semiconductor elements to the core substrate can improve the performance of the semiconductor package substrate. When using a glass substrate as a glass core substrate or glass interposer, it is necessary to form through electrodes to make the front and back surfaces of the glass substrate electrically conductive. These through electrodes are formed by creating fine through holes and filling the inside of the through holes with a conductive material (Patent Document 1). Alternatively, non-through holes may be formed in the glass substrate instead of through holes.

[0003] Japanese Patent Application Publication No. 2023-82984

[0004] However, because glass is a brittle material, when using glass substrates as glass core substrates or glass interposers, there is a risk of the glass substrate being damaged during the manufacturing process, transportation process, or use of the package substrate.

[0005] In view of the above issues, the present invention aims to provide a glass substrate that is less prone to damage when used as a core substrate or interposer for a package substrate.

[0006] As a result of repeated experiments, the inventors of this invention have found that the above technical problems can be solved by using a glass substrate with high fracture toughness, and propose this as the present invention.

[0007] (1) The perforated glass substrate for semiconductor packaging of the present invention, which was devised to solve the above problems, is a glass substrate comprising a first main surface, a second main surface which is the opposite surface of the first main surface, and holes formed on at least one of the main surfaces of the first main surface and the second main surface, wherein the holes include non-through holes formed on at least one of the main surfaces of the first main surface and the second main surface, and / or through holes that penetrate between the first main surface and the second main surface, and the fracture toughness value is 0.8 MPa·m ０．５It is characterized by the above.

[0008] (2) In the configuration of (1) above, the porous glass substrate is preferably a crystallized glass.

[0009] (3) In the configuration of (1) or (2) above, the porous glass substrate has, as a glass composition, in mol%, SiO ２ 50 to 85%, Al ２ O ３ 0 to 20%, Li ２ O 1 to 35%, P ２ O ５ 0.1 to 15%, ZrO ２ 0.1 to 10%, Na ２ O 0 to 12%, and is preferably a crystallized glass containing Li ２ O - SiO ２ system crystals. [[ID=XX]]

[0010] (4) In the configuration of (1) or (2) above, the porous glass substrate has, as a glass composition, in mol%, SiO ２ 65 to 75%, Al ２ O ３ 10 to 20%, Li ２ O 0.1 to 10%, BaO 0 to 5%, MgO 0 to 5%, CaO 0 to 3%, TiO ２ 0 to 4%, ZrO ２ 0 to 5%, P ２ [[ID=XX]] ５ 0 to 5%, Na ２ O 0 to 3%, K​​​​​​​​​​​​​​​​​​​​​​​​​It is preferable that the crystallized glass contains systemic crystals.

[0012] (6) In any of the configurations (1) to (5) above, the perforated glass substrate has an average thermal expansion coefficient of -10 × 10 in the temperature range of 30 to 380°C. －７ / ℃ or higher 150 x 10 －７ It is preferable that the temperature is below / ℃.

[0013] (7) In any of the configurations described in (1) to (6) above, the perforated glass substrate is preferably used for semiconductor packaging substrate applications.

[0014] (8) The perforated glass substrate for semiconductor packaging of the present invention, which was devised to solve the above problems, is a glass substrate comprising a first main surface and a second main surface which is the opposite surface of the first main surface, wherein the fracture toughness value is 0.8 MPa·m ０．５ The above describes the features of the material, which is used for semiconductor package substrate applications.

[0015] According to the present invention, it is possible to provide a glass substrate that is less prone to damage when used as a core substrate or interposer in a package substrate.

[0016] Figure 1 is a top view showing a glass substrate having through holes according to one embodiment of the present invention. Figure 2 is a cross-sectional view taken along line A-A of the glass substrate in Figure 1. Figure 3 is a schematic cross-sectional view showing a first example of through holes formed in a glass substrate according to one embodiment of the present invention. Figure 4 is a schematic cross-sectional view showing a second example of through holes formed in a glass substrate according to one embodiment of the present invention. Figure 5 is a top view showing a glass substrate having non-through holes according to one embodiment of the present invention. Figure 6 is a cross-sectional view taken along line B-B of the glass substrate in Figure 5. Figure 7 is a schematic cross-sectional view showing non-through holes formed in a glass substrate according to one embodiment of the invention. Figure 8 is a flow chart showing a method for manufacturing a glass substrate according to one embodiment of the present invention. Figure 9 is a perspective view showing a laser modification process according to one embodiment of the present invention. Figure 10 is a schematic diagram for comparing a glass substrate before and after through hole formation according to one embodiment of the present invention. Figure 11 is a flow chart showing a method for manufacturing a glass substrate according to one embodiment of the present invention. Figure 12 is a perspective view showing a laser removal process according to one embodiment of the present invention.

[0017] Embodiments of the present invention will be described below with reference to the drawings. In the description of the content of components in the glass composition, percentages represent moles unless otherwise specified.

[0018] [First Embodiment] First, the glass composition and properties of the glass substrate according to the first embodiment of the present invention will be described. The glass substrate according to this embodiment is Li ２ O-SiO ２ This is a crystallized glass containing LS-type crystals (LS-type crystallized glass) and is used for semiconductor package substrate applications. Furthermore, the glass substrate according to this embodiment comprises a first main surface and a second main surface which is the opposite surface of the first main surface, and is a glass substrate (non-perforated glass substrate) in which holes (through holes or non-through holes) are not formed on the main surfaces.

[0019] The glass substrate according to this embodiment has a glass composition of SiO in mol%. ２ 50-85%, Al ２ O ３ 0-20%, Li ２ O 1-35%, P ２ O ５ 0.1-15%, ZrO ２ 0.1-10%, Na ２ It is preferable that it contains 0 to 12% of O. The reasons for limiting the content of each component as described above are as follows.

[0020] SiO ２ SiO is a component that forms the network of glass and is also a component for precipitating crystals such as lithium disilicate. ２ If the SiO content is too low, vitrification becomes difficult, and the Young's modulus and weather resistance tend to decrease. ２ The lower limit of is preferably 50% or more, more preferably 55% or more, more preferably 60% or more, and particularly preferably 65% ​​or more. On the other hand, SiO ２If the content of SiO is too high, meltability and moldability tend to decrease, and the coefficient of thermal expansion becomes too low, making it difficult to match the coefficient of thermal expansion of the surrounding material. If the difference in the coefficient of thermal expansion between the glass substrate and the surrounding material becomes large, there is a risk that the glass substrate and surrounding material may break due to thermal stress when heat treatment is performed during the manufacturing process of the package substrate. Therefore, SiO ２ The upper limit is preferably 85% or less, more preferably 80% or less, more preferably 75% or less, more preferably 73% or less, and particularly preferably 70% or less.

[0021] Al ２ O ３ Al is a component that increases Young's modulus and fracture toughness. ２ O ３ The lower limit of is preferably 0% or more, more preferably 0.1% or more, more preferably 0.5% or more, more preferably 1% or more, more preferably 2% or more, and particularly preferably 4% or more. On the other hand, Al ２ O ３ If the content is too high, the high-temperature viscosity increases, making it easier for meltability and moldability to decrease. Also, devitrified crystals are more likely to precipitate in the glass, making it difficult to form into a plate shape using methods such as the overflow downdraw method. Therefore, Al ２ O ３ The upper limit of the amount is preferably 20% or less, more preferably 19.5% or less, more preferably 19% or less, more preferably 18.8% or less, more preferably 18.7% or less, more preferably 18.6% or less, more preferably 18.5% or less, more preferably 18% or less, more preferably 15% or less, more preferably 12% or less, more preferably 10% or less, more preferably 6% or less, and particularly preferably 5% or less.

[0022] B ２ O ３ This is a component that enhances meltability and resistance to devitrification. Therefore, B ２ O ３ The lower limit of is preferably 0% or more, more preferably 0.1% or more, more preferably 0.2% or more, more preferably 0.3% or more, and particularly preferably 0.5% or more. On the other hand, B ２ O ３If the content is too high, the Young's modulus, fracture toughness, and weather resistance tend to decrease. Therefore, B ２ O ３ The upper limit is preferably 10% or less, more preferably 7% or less, more preferably 5% or less, more preferably 3% or less, and particularly preferably less than 1%.

[0023] P ２ O ５ This is a component that generates crystal nuclei. Therefore, P ２ O ５ The lower limit of P is preferably 0.1% or more, more preferably 0.4% or more, and particularly preferably 0.5% or more. On the other hand, P ２ O ５ Introducing a large amount of P will suppress crystallization too much, making it difficult to improve the rigidity and toughness of the substrate. Therefore, ２ O ５ The upper limit is preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 4.5% or less, and particularly preferably 3% or less.

[0024] Li ２ O is a component for precipitating crystals such as lithium disilicate, and is also a component that increases Young's modulus and fracture toughness. Therefore, Li ２ The lower limit of O is preferably 1% or more, more preferably 2% or more, more preferably 3% or more, more preferably 4% or more, more preferably 4.5% or more, more preferably 5% or more, more preferably 5.5% or more, more preferably 6% or more, more preferably 6.3% or more, more preferably 6.5% or more, and particularly preferably 6.6% or more. On the other hand, Li ２ If the O content is too high, weather resistance tends to decrease. Therefore, Li ２ The upper limit of O is preferably 35% or less, more preferably 32% or less, more preferably 30% or less, more preferably 29% or less, more preferably 28% or less, more preferably 26% or less, more preferably 25% or less, more preferably 23% or less, and particularly preferably 22% or less.

[0025] Na ２O is a component that significantly increases meltability by lowering high-temperature viscosity. It is also a component that contributes to the initial melting of glass raw materials. Therefore, Na ２ The lower limit of O is preferably 0% or more, more preferably 0.1% or more, more preferably 0.5% or more, more preferably 1% or more, more preferably 3% or more, more preferably 4% or more, more preferably 5% or more, more preferably 5.5% or more, more preferably 6% or more, more preferably 6.5% or more, and particularly preferably 7% or more. On the other hand, Na ２ If the O content is too high, the crystallite size tends to become coarser, and the resistance tends to decrease. Therefore, Na ２ The upper limit of O is preferably 12% or less, more preferably 10% or less, more preferably 9.8% or less, more preferably 9.5% or less, more preferably 9.3% or less, more preferably 9.1% or less, more preferably 9% or less, more preferably 8.7% or less, and particularly preferably 7% or less. When weather resistance is important, Na ２ The upper limit of O is preferably 6% or less, more preferably 5% or less, more preferably 4% or less, more preferably 3% or less, more preferably 2% or less, more preferably 1% or less, and particularly preferably less than 1%.

[0026] K ２ O is a component that lowers high-temperature viscosity and increases meltability. Therefore, K ２ The lower limit of O is preferably 0% or more, more preferably 0.1% or more, more preferably 0.2% or more, more preferably 0.3% or more, more preferably 0.5% or more, and particularly preferably 0.8% or more. On the other hand, K ２ If the O content is too high, the crystallite size tends to become coarser. Therefore, K ２ The upper limit of O is preferably 7% or less, more preferably 5% or less, more preferably 3% or less, and particularly preferably less than 1%.

[0027] ZrO ２ It is a component that enhances Young's modulus, fracture toughness, and weather resistance, and is also a component that generates crystal nuclei. Therefore, ZrO ２The lower limit is preferably 0.1% or more, more preferably 1% or more, still more preferably 2% or more, and particularly preferably 3% or more. On the other hand, when a large amount of ZrO ２ is introduced, the glass tends to devitrify, and since the raw material for introduction is hardly soluble, there is a risk that unmelted foreign matter may be mixed into the glass. Therefore, the upper limit of ZrO ２ is preferably 10% or less, more preferably 9% or less, still more preferably 7% or less, more preferably 6% or less, and particularly preferably 5% or less.

[0028] MgO is a component that increases the Young's modulus and fracture toughness value, and at the same time decreases the high-temperature viscosity to enhance the meltability. Therefore, the lower limit of MgO is preferably 0% or more, more preferably 0.1% or more, still more preferably 0.2% or more, more preferably 0.3% or more, still more preferably 0.5% or more, and particularly preferably 1% or more. On the other hand, if the content of MgO is too large, the glass tends to devitrify during molding. Therefore, the upper limit of MgO is preferably 10% or less, more preferably 7% or less, still more preferably 4% or less, and particularly preferably 2% or less.

[0029] CaO is a component that decreases the high-temperature viscosity to enhance the meltability. Also, among the alkaline earth metal oxides, since the raw material for introduction is relatively inexpensive, it is a component that reduces the batch cost. Therefore, the lower limit of CaO is preferably 0% or more, more preferably 0.1% or more, still more preferably 0.2% or more, and particularly preferably 0.3% or more. On the other hand, if the content of CaO is too large, the glass tends to devitrify during molding. Therefore, the upper limit of CaO is preferably 5% or less, more preferably 3% or less, still more preferably 1% or less, and particularly preferably 0.5% or less.

[0030] SrO is a component that suppresses phase separation and a component that suppresses coarsening of the crystallite size. Therefore, the lower limit of SrO is preferably 0% or more, more preferably 0.1% or more, and particularly preferably 0.2% or more. On the other hand, if the content of SrO is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the upper limit of SrO is preferably 5% or less, more preferably 4% or less, still more preferably 3% or less, and particularly preferably 2% or less.

[0031] BaO is a component that suppresses coarsening of the crystallite size. Therefore, the lower limit amount of BaO is preferably 0% or more, more preferably 0.1% or more, particularly preferably 0.5% or more. On the other hand, if the content of BaO is too large, it becomes difficult to precipitate crystals by heat treatment. Therefore, the upper limit amount of BaO is preferably 5% or less, more preferably 4% or less, still more preferably 3% or less, particularly preferably 2% or less.

[0032] ZnO is a component that lowers the high-temperature viscosity and significantly enhances the fusibility, and is also a component that suppresses coarsening of the crystallite size. Therefore, the lower limit amount of ZnO is preferably 0% or more, more preferably 0.1% or more, still more preferably 0.2% or more, still more preferably 0.3% or more, particularly preferably 0.5% or more. On the other hand, if the content of ZnO is too large, the glass is likely to devitrify during molding. Therefore, the upper limit amount of ZnO is preferably 5% or less, more preferably 3% or less, still more preferably 2% or less, particularly preferably 1% or less.

[0033] TiO ２ is a component for generating crystal nuclei and is also a component for improving weather resistance. Therefore, the lower limit amount of TiO ２ is preferably 0% or more, more preferably 0.1% or more, still more preferably 0.2% or more, particularly preferably 0.5% or more. On the other hand, if a large amount of TiO ２ is introduced, the glass is colored and the transmittance is likely to decrease. Therefore, the upper limit amount of TiO ２ is preferably 5% or less, more preferably 3% or less, particularly preferably less than 1%.

[0034] SnO ２ is a component that acts as a fining agent. Therefore, the lower limit amount of SnO ２ is preferably 0% or more, more preferably 0.01% or more, still more preferably 0.05% or more, still more preferably 0.1% or more, particularly preferably 0.2% or more. On the other hand, if the content of SnO ２ is too large, the devitrification resistance is likely to decrease. Therefore, the upper limit amount of SnO ２ is preferably 3% or less.

[0035] As clarifying agents, Cl, SO ３ , CEO ２ The group (preferably Cl, SO ３ One or more selected from the group () may be added in an amount of 0.001 to 1%. In addition, Sb may be used as a clarifying agent. ２ O ３ It may be added in an amount of 0.001 to 1%. Depending on the high-temperature viscosity which varies with the composition, an effective clarifying agent can be added.

[0036] Fe ２ O ３ The upper limit is preferably less than 1000 ppm (less than 0.1%), more preferably less than 800 ppm, more preferably less than 600 ppm, more preferably less than 400 ppm, and particularly preferably less than 300 ppm. Furthermore, Fe ２ O ３ The content is restricted to the above range, and the molar ratio of SnO ２ / (Fe ２ O ３ +SnO ２ It is preferable to set the value to 0.8 or higher, more preferably to 0.9 or higher, and particularly preferably to 0.95 or higher. Doing so makes it easier to improve the total light transmittance in the wavelength range of 400 to 770 nm.

[0037] Y ２ O ３ This is a component that increases Young's modulus and fracture toughness. Therefore, Y ２ O ３ The lower limit of is preferably 0% or more, more preferably 0.1% or more, more preferably 1% or more, more preferably 1.5% or more, and particularly preferably 2% or more. On the other hand, Y ２ O ３ The raw material itself is expensive, and adding large amounts tends to reduce resistance to devitrification. Therefore, Y ２ O ３ The upper limit is preferably 15% or less, more preferably 12% or less, more preferably 10% or less, more preferably 8% or less, and particularly preferably 6% or less.

[0038] Gd ２ O ３ , Nb ２ O５ La ２ O ３ Ta ２ O ５ , HfO ２ This is a component that increases Young's modulus and fracture toughness. Therefore, Gd ２ O ３ , Nb ２ O ５ La ２ O ３ Ta ２ O ５ , Hf ２ The lower limit range for the total amount of O and the individual content is preferably 0% or more, more preferably 0.1% or more, more preferably 0.2% or more, and particularly preferably 0.5% or more. On the other hand, Gd ２ O ３ , Nb ２ O ５ La ２ O ３ Ta ２ O ５ , HfO ２ The raw material itself is expensive, and adding large amounts tends to reduce resistance to devitrification. Therefore, Gd ２ O ３ , Nb ２ O ５ La ２ O ３ Ta ２ O ５ , Hf ２ The upper limits for the total amount of O and the individual content are preferably 15% or less, more preferably 10% or less, more preferably 5% or less, and particularly preferably 3% or less.

[0039] The glass substrate of this embodiment is composed of substantially As, for environmental reasons. ２ O ３ , PbO, F, Bi ２ O ３ It is preferable that the product does not contain the above. "Substantially does not contain" means that the specified components are not actively added as glass components, but the addition at an impurity level is permitted, and specifically refers to cases where the content of the specified components is less than 0.05%.

[0040] The crystallite size is preferably 5000 nm or less, more preferably 4000 nm or less, more preferably 3000 nm or less, more preferably 2000 nm or less, and particularly preferably 1500 nm or less, in order to suppress surface roughness after polishing. On the other hand, if the crystallite size is too small, the fracture toughness value tends to decrease. Therefore, the crystallite size is preferably 100 nm or more, more preferably 200 nm or more, more preferably 300 nm or more, more preferably 400 nm or more, more preferably 500 nm or more, and particularly preferably 800 nm or more.

[0041] The glass substrate according to this embodiment preferably has the following characteristics.

[0042] The fracture toughness value is 0.8 MPa·m ０．５ The above is preferable, preferably 1 MPa·m ０．５ More preferably, 1.2 MPa·m ０．５ In particular, 1.5 MPa·m is preferred. ０．５ This concludes the explanation. This makes it possible to make glass substrates less susceptible to breakage when used as core substrates or interposers in package substrates. Furthermore, the fracture toughness value can be, for example, 2 MPa·m. ０．５ The following are also acceptable.

[0043] The degree of crystallinity is preferably 5% or more, more preferably 10% or more, more preferably 20% or more, more preferably 30% or more, more preferably 35% or more, more preferably 40% or more, more preferably 45% or more, more preferably 50% or more, more preferably 55% or more, more preferably 60% or more, more preferably 65% ​​or more, more preferably 70% or more, more preferably 75% or more, more preferably 80% or more, more preferably 85% or more, and particularly preferably 90% or more. Increasing the degree of crystallinity makes it easier to increase the fracture toughness value of the glass substrate.

[0044] The average coefficient of thermal expansion CTE in the temperature range of 30 to 380°C is -10 × 10 －７ / ℃ or higher 150 x 10 －７ / ℃ or below, or 5 × 10 －７ / ℃ or higher 150 x 10 －７A temperature of 0 / °C or lower is preferable. This makes it less likely for the glass substrate to break during the cooling process associated with heat treatment in the crystallization process and the package substrate manufacturing process. In addition, the thermal expansion coefficients of the glass substrate and the various films can be matched, making it less likely for defects such as film peeling to occur. Here, "thermal expansion coefficient in the temperature range of 30 to 380°C" refers to the value measured with a dilatometer. It is preferable to adjust the average thermal expansion coefficient CTE in the temperature range of 30 to 380°C to match the thermal expansion coefficients of the Si material, resin material, copper-clad laminate substrate, etc. that constitute the package substrate.

[0045] The Young's modulus is preferably 70 GPa or higher, more preferably 72 GPa or higher, more preferably 73 GPa or higher, more preferably 74 GPa or higher, more preferably 75 GPa or higher, more preferably 76 GPa or higher, more preferably 77 GPa or higher, more preferably 78 GPa or higher, more preferably 79 GPa or higher, more preferably 80 GPa or higher, more preferably 83 GPa or higher, more preferably 85 GPa or higher, more preferably 87 GPa or higher, more preferably 90 GPa or higher, and particularly preferably 100 GPa or higher. When the Young's modulus is within this range, warping is less likely to occur during film formation or when semiconductor elements are mounted on the glass substrate. This suppresses film peeling and damage to the glass substrate and semiconductor elements. The Young's modulus may also be 150 GPa or lower.

[0046] The density is preferably 3.5 g / cm³. ３ More preferably, 3.25 g / cm³ ３ More preferably 3 g / cm³ ３ More preferably, 2.9 g / cm³ ３ More preferably, 2.8 g / cm³ ３ More preferably, 2.7 g / cm³ ３ More preferably, 2.6 g / cm³ ３ The following is particularly preferred: 2.55 g / cm³ ３ The following applies. The density is 2.37 g / cm³. ３ The above is also acceptable. This makes it possible to lighten the glass substrate. Note that SiO in the glass composition ２ , B ２ O ３, P ２ O ５ Increase the content of alkali metal oxides, alkaline earth metal oxides, ZnO, ZrO ２ , TiO ２ Reducing the amount of this substance will make it easier for the density to decrease.

[0047] The thickness of the glass substrate is preferably 0.1 mm or more, more preferably 0.2 mm or more, more preferably 0.3 mm or more, and particularly preferably 0.5 mm or more. This reduces the likelihood of defects occurring during semiconductor element mounting. Alternatively, the thickness of the glass substrate is preferably 3 mm or less, more preferably 2 mm or less, more preferably 1.5 mm or less, and particularly preferably 1.1 mm or less. This allows for smaller hole diameters when holes are formed. Reducing the hole diameter increases the mounting density of semiconductor elements on the glass substrate and allows for the formation of fine wiring. The thickness of the glass substrate can be adjusted by the flow rate and drawing speed during molding. Furthermore, processes such as polishing may be performed to adjust the thickness of the glass substrate.

[0048] [Second Embodiment] Next, the glass composition and properties of the glass substrate according to the second embodiment of the present invention will be described. The glass substrate according to the second embodiment is Li ２ O-Al ２ O ３ -SiO ２ The glass substrate according to the second embodiment differs from that according to the first embodiment in that it is a crystallized glass containing LAS-based crystals (LAS-based crystallized glass). Regarding the glass substrate according to the second embodiment, the configurations common to the glass substrate according to the first embodiment are omitted from the description.

[0049] The glass substrate according to this embodiment has a glass composition of SiO in mol%. ２ 65-75%, Al ２ O ３ 10-20%, Li ２ O 0.1-10%, BaO 0-5%, MgO 0-5%, CaO 0-3%, TiO ２ 0-4%, ZrO ２ 0-5%, P ２ O ５ 0-5%, Na ２O 0-3%, K ２ It is preferable that it contains 0-2% of O. The reasons for limiting the content of each component as described above are as follows.

[0050] SiO ２ SiO is a component that forms the framework of glass, and is also a component of LAS-type crystals. ２ If the SiO content is too low, the coefficient of thermal expansion tends to increase, which worsens the processability with a laser. ２ The lower limit of is preferably 65% ​​or more, more preferably 67% or more, more preferably 69% or more, and particularly preferably 70% or more. On the other hand, SiO ２ If the SiO content is too high, the melting properties of the glass will decrease, the viscosity of the glass melt will increase, making it difficult to clarify, and the molding of the glass will become difficult, thus easily reducing productivity. ２ The upper limit is preferably 75% or less, more preferably 74% or less, more preferably 73.5% or less, and particularly preferably 73% or less.

[0051] Al ２ O ３ It is a component that forms the framework of glass, and is also a component of LAS-type crystals. ２ O ３ Al is a component that increases the rigidity of the substrate and reduces the high-temperature viscosity of the crystallized glass. ２ O ３ The lower limit of is preferably 10% or more, more preferably 11% or more, more preferably 12% or more, and particularly preferably 13% or more. On the other hand, Al ２ O ３ If the content is too high, crystals such as mullite tend to precipitate, causing the glass to devitrify and reducing the productivity of the glass. Therefore, Al ２ O ３ The upper limit is preferably 20% or less, more preferably 19% or less, more preferably 16% or less, and particularly preferably 15% or less.

[0052] Li ２O is a component of LAS-type crystals, and also a component that reduces the viscosity of glass, improves the meltability and moldability of glass, and suppresses the precipitation of crystals such as mullite. Therefore, Li ２ The lower limit of O is preferably 0.1% or more, more preferably 0.5% or more, more preferably 1% or more, and particularly preferably 5% or more. On the other hand, Li ２ If the O content is too high, the crystallinity becomes too strong, making the glass prone to devitrification, and the meltability and moldability deteriorate. ２ Since O is an expensive raw material, the cost of the raw material batch will be high. Therefore, Li ２ The upper limit of O is preferably 10% or less, more preferably 9% or less, more preferably 8.5% or less, and particularly preferably 8% or less.

[0053] BaO is a component that reduces the viscosity of glass, improving its meltability and moldability. It is also a component used to adjust the thermal expansion coefficient and refractive index of crystallized glass. More specifically, the addition of BaO is equivalent in amount (moles) of Na ２ O and K ２ The addition of BaO tends to lower the thermal expansion coefficient of the resulting crystallized glass compared to the addition of O and MgO. Furthermore, it tends to lower the liquidus temperature and increase the liquidus viscosity, thus improving productivity. Additionally, it tends to suppress the precipitation of mullite during the molding of crystalline glass. Since mullite crystals grow rapidly, they are difficult to remove after formation. Therefore, it is preferable to avoid compositions that easily precipitate mullite crystals. Accordingly, the lower limit of BaO is preferably 0% or more, more preferably 0.1% or more, more preferably 0.2% or more, and particularly preferably 0.4% or more. On the other hand, if the BaO content is too high, Ba-containing crystals precipitate, making the glass more prone to devitrification, thus reducing productivity. Note that BaO raw materials tend to be more expensive than MgO and CaO raw materials, which, like BaO, adjust the viscosity of the glass. Therefore, the upper limit of BaO is preferably 5% or less, more preferably 4% or less, more preferably 3% or less, and particularly preferably 2.5% or less.

[0054] Li ２O is a component of LAS-type crystals, and also a component that reduces the viscosity of glass, thereby improving its meltability and moldability. Li ２ If the O content is too high, the liquid-phase viscosity tends to become too low, making molding difficult. Also, the crystallinity tends to become too strong, making the glass more prone to devitrification. As a result, it becomes difficult to obtain desired properties, such as the crystallized glass becoming more fragile. On the other hand, BaO is also a component that lowers the viscosity of glass and improves its meltability and moldability, but its effect is compared to Li. ２ It tends to be smaller than 0. Also, because it has the effect of lowering the liquidus temperature, it tends to suppress devitrification. Therefore, in order to obtain crystallized glass with the desired properties while suppressing glass devitrification and without lowering the liquidus viscosity too much, Li ２ O / BaO(Li ２ The ratio of O content to BaO content is preferably controlled. ２ The upper limit range for O / BaO is preferably 100 or less, more preferably 90 or less, more preferably 30 or less, and particularly preferably 15 or less. Also, Li ２ The lower limit range for O / BaO is preferably 1 or more, more preferably 2 or more, more preferably 3 or more, and particularly preferably 5 or more.

[0055] MgO enhances crystallinity, causing crystals such as mullite to precipitate and making the glass more easily devitrified. Therefore, the upper limit of MgO is preferably 5% or less, more preferably 4% or less, more preferably 3% or less, and particularly preferably 2.5% or less. On the other hand, MgO is an inexpensive raw material and can reduce the viscosity of the glass at low cost, as well as improving the rigidity of the substrate and reducing viscosity. Therefore, the lower limit of MgO is preferably 0% or more, more preferably 0.1% or more, more preferably 0.5% or more, and particularly preferably 1% or more.

[0056] CaO is a component that inhibits the crystallization of LAS-based crystals when present in large quantities in glass. Therefore, the upper limit of CaO is preferably 3% or less, more preferably 2% or less, more preferably 1% or less, and particularly preferably 0.1% or less. On the other hand, CaO is easily included in the raw materials as an impurity, and attempting to remove it completely tends to increase the cost of the raw material batch. Therefore, the lower limit of CaO is preferably 0% or more, more preferably 0.002% or more, more preferably 0.006% or more, and particularly preferably 0.009% or more.

[0057] TiO ２ TiO is a nucleating component that causes crystals to precipitate during the crystallization process. On the other hand, if it is included in large quantities, it increases the devitrification of the glass more than necessary, making it difficult to maintain productivity. Therefore, TiO ２ The upper limit of TiO is preferably 4% or less, more preferably 3% or less, more preferably 2.8% or less, and particularly preferably 1.9% or less. ２ As mentioned above, TiO can be a component of crystal nuclei, so when added to glass, it makes it easier for crystal nuclei to precipitate during the crystallization process. ２ If the content is too low, sufficient crystal nuclei will not precipitate during the crystallization process, resulting in the precipitation of coarse β-quartz solid solutions, and the crystallized glass will easily become cloudy. Also, TiO ２ Because it is easily mixed in as an impurity, TiO ２ Attempting to completely remove TiO tends to increase the cost of the raw material batch. ２ The lower limit of the amount is preferably 0% or more, more preferably 0.1% or more, more preferably 0.5% or more, and particularly preferably 1% or more.

[0058] ZrO ２ ZrO is a nucleating component that causes crystals to precipitate during the crystallization process. ２ If the content is too low, sufficient crystal nuclei will not form, and coarse crystals will easily precipitate, resulting in a crystallized glass that is cloudy or easily broken. Therefore, ZrO ２ The lower limit of the amount is preferably 0% or more, more preferably 0.3% or more, more preferably 0.5% or more, and particularly preferably 0.8% or more. On the other hand, ZrO ２If the content is too high, coarse ZrO ２ Crystals precipitate, making the glass more prone to devitrification, the crystallized glass more fragile, and the crystallized glass tends to become cloudy. Therefore, ZrO ２ The upper limit of the amount is preferably 5% or less, more preferably 3% or less, more preferably 2% or less, and particularly preferably 1% or less.

[0059] P ２ O ５ If the content is too high, crystallization tends to be suppressed too much, making it difficult to obtain the desired mechanical properties. Also, P ２ O ５ The raw material price is high, and the cost of the raw material batch tends to increase as the content increases. Therefore, P ２ O ５ The upper limit of P is preferably 5% or less, more preferably 4% or less, more preferably 3% or less, and particularly preferably 2.5% or less. ２ O ５ The lower limit of the amount is preferably 0% or more, and more preferably 0.1% or more.

[0060] Na ２ O is a component that inhibits the crystallization of LAS-type crystals when present in large quantities in glass. Therefore, Na ２ The upper limit of O is preferably 3% or less, more preferably 2% or less, more preferably 1% or less, and particularly preferably 0.5% or less. However, Na ２ O is easily mixed in as an impurity, so Na ２ Attempting to completely remove O tends to increase the cost of the raw material batch. Therefore, Na ２ The lower limit of O is preferably 0% or more, more preferably 0.001% or more, more preferably 0.005% or more, and particularly preferably 0.02% or more.

[0061] K ２ O is a component that inhibits the crystallization of LAS-type crystals when present in large quantities in glass. Therefore, K ２ The upper limit of O is preferably 2% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.4% or less. However, K ２ O is easily mixed in as an impurity, so K２ Attempting to completely remove O tends to increase the cost of the raw material batch. Therefore, K ２ The lower limit of O is preferably 0% or more, more preferably 0.001% or more, more preferably 0.02% or more, and particularly preferably 0.1% or more.

[0062] As mentioned above, Na ２ O and K ２ O has a similar effect in this embodiment. Therefore, Na ２ O and K ２ If the total amount of O is too high, it will inhibit the crystallization of LAS-type crystals. Therefore, Na ２ O+K ２ O(Na ２ O content and K ２ The upper limit of the total amount of O content is preferably 5% or less, more preferably 3% or less, more preferably 1.5% or less, and particularly preferably 0.9% or less. However, Na ２ O and K ２ Since oxygen (O) is easily introduced as an impurity, attempting to completely remove it tends to increase the cost of the raw material batch. Therefore, Na ２ O+K ２ The lower limit of O is preferably 0% or more, more preferably 0.002% or more, more preferably 0.02% or more, and particularly preferably 0.05% or more.

[0063] Fe ２ O ３ It is an ingredient that enhances the coloring of glass, especially TiO ２ Ya SnO ２ It is a component that significantly intensifies coloration through interaction with [another component]. Therefore, Fe ２ O ３ The upper limit of is preferably 1% or less, more preferably 0.09% or less, more preferably 0.08% or less, and particularly preferably 0.07% or less. However, Fe ２ O ３ Because it is easily mixed in as an impurity, Fe ２ O ３ Attempting to completely remove it tends to increase the cost of the raw material batch. Therefore, Fe ２ O ３The lower limit is preferably 0% or more, more preferably 0.001% or more, more preferably 0.005% or more, and particularly preferably 0.01% or more.

[0064] As ２ O ３ Ya Sb ２ O ３ As is highly toxic and can contaminate the environment during the glass manufacturing process and waste glass disposal. Therefore, the upper limits of these components are preferably 1% or less, more preferably 0.7% or less, more preferably 0.3% or less, and more preferably 0.15% or less, and it is particularly preferable that they are substantially absent (specifically, less than 0.1% by mass). In addition, as is acceptable within a range where the environmental impact during the glass manufacturing process and waste glass disposal is negligible. ２ O ３ Ya Sb ２ O ３ These components may be included, and they can function as clarifying agents, nucleating agents, etc.

[0065] PbO is highly toxic and can contaminate the environment during glass manufacturing processes and waste glass disposal. Therefore, the upper limit of PbO is preferably 1% or less, more preferably 0.7% or less, more preferably 0.3% or less, and more preferably 0.15% or less, and it is particularly preferable that it is substantially absent (specifically, less than 0.1% by mass). However, PbO may be included in a range where the environmental impact during glass manufacturing processes and waste glass disposal is negligible, in which case it can function as a coloring agent or an additive to reduce viscosity.

[0066] If the SrO content is too high, the glass is more prone to devitrification, reducing productivity. Also, SrO is expensive, and adding large amounts tends to increase raw material costs. Therefore, the upper limit of SrO is preferably 3% or less, more preferably 2.5% or less, more preferably 1.9% or less, and particularly preferably 0.6% or less. On the other hand, since SrO is easily introduced as an impurity, attempting to completely remove SrO tends to increase the cost of the raw material batch. Therefore, the lower limit of SrO is preferably 0% or more, more preferably 0.05% or more, more preferably 0.1% or more, and particularly preferably 0.2% or more.

[0067] SnO ２ It is a component that acts as a clarifying agent. It can also be a component that efficiently precipitates crystals in the crystallization process. SnO ２ If the content is too low, clarifying the glass becomes difficult, and productivity tends to decrease. Therefore, SnO ２ The lower limit of the amount is preferably 0% or more, more preferably 0.03% or more, more preferably 0.05% or more, and particularly preferably 0.1% or more. On the other hand, SnO ２ If the content is too high, devitrification increases and productivity decreases. Also, when glass melts, SnO ２ The evaporation rate of SnO increases, ２ The evaporated substances tend to scatter and easily pollute the environment. Therefore, SnO ２ The upper limit is preferably 1% or less, more preferably 0.8% or less, more preferably 0.4% or less, and particularly preferably 0.2% or less.

[0068] The glass substrate according to this embodiment preferably has the following characteristics.

[0069] The fracture toughness value is preferably 0.8 MPa·m ０．５ More preferably, 0.82 MPa·m ０．５ More preferably, 0.84 MPa·m ０．５ The above is particularly preferable at 0.86 MPa·m ０．５ This concludes the explanation. This makes it possible to make glass substrates less susceptible to breakage when used as core substrates or interposers in package substrates. Furthermore, the fracture toughness value can be, for example, 2 MPa·m.０．５ The following is also acceptable. This makes it less likely for the glass substrate to break when used as a core substrate or interposer in a package substrate.

[0070] The degree of crystallinity is preferably 5% or more, more preferably 10% or more, more preferably 20% or more, more preferably 30% or more, more preferably 35% or more, more preferably 40% or more, more preferably 45% or more, more preferably 50% or more, more preferably 55% or more, more preferably 60% or more, more preferably 65% ​​or more, more preferably 70% or more, more preferably 75% or more, more preferably 80% or more, more preferably 85% or more, and particularly preferably 90% or more. Increasing the degree of crystallinity makes it easier to increase the fracture toughness value of the glass substrate.

[0071] The average coefficient of thermal expansion CTE in the temperature range of 30 to 380°C is -10 × 10 －７ / ℃ or higher 150 x 10 －７ / ℃ or below, or 5 × 10 －７ / ℃ or higher 150 x 10 －７ A temperature of 0 / °C or lower is preferable. This makes it less likely for the glass substrate to break during the cooling process associated with heat treatment in the crystallization process and the package substrate fabrication process. In addition, the thermal expansion coefficients of the glass substrate and the various films can be matched, making it less likely for defects such as film peeling to occur. It is preferable to adjust the average thermal expansion coefficient CTE in the temperature range of 30 to 380°C to match the thermal expansion coefficients of the Si material, resin material, copper-clad laminate substrate, etc. that constitute the package substrate.

[0072] The Young's modulus is preferably 70 GPa or higher, more preferably 75 GPa or higher, more preferably 80 GPa or higher, and particularly preferably 85 GPa or higher. A Young's modulus within this range makes warping less likely during film formation and semiconductor device mounting onto the glass substrate. This suppresses film delamination and damage to the glass substrate and semiconductor device. Alternatively, the Young's modulus may be 100 GPa or lower.

[0073] The density is preferably 2.8 g / cm³. ３ More preferably, 2.78 g / cm³ ３More preferably, 2.76 g / cm³ ３ The following is particularly preferable: 2.74 g / cm³ ３ The following applies. The density is 2.4 g / cm³. ３ The above is also acceptable. This makes it possible to lighten the glass substrate. Note that SiO in the glass composition ２ , B ２ O ３ , P ２ O ５ Increase the content of alkali metal oxides, alkaline earth metal oxides, ZnO, ZrO ２ , TiO ２ Reducing the amount of this substance will make it easier for the density to decrease.

[0074] The preferred range for the thickness of the glass substrate according to the second embodiment and the reason for this is as described in the first embodiment.

[0075] [Third Embodiment] Next, the glass composition and properties of the glass substrate according to the third embodiment of the present invention will be described. The glass substrate according to the third embodiment is MgO-Al ２ O ３ -SiO ２ The glass substrate according to the third embodiment differs from that according to the first embodiment in that it is a crystallized glass containing a crystalline structure (MAS-based crystallized glass). Regarding the glass substrate according to the third embodiment, the configurations common to the glass substrate according to the first embodiment are omitted from the description.

[0076] The glass substrate according to this embodiment has a glass composition of SiO in mol%. ２ 30-90%, Al ２ O ３ It is preferable that the content of each component be greater than 0% to 50% and MgO greater than 0% to 40%. The reasons for limiting the content of each component as described above are as follows.

[0077] SiO ２ It forms a glass skeleton, and MgO-Al ２ O ３ -SiO ２ It is a component that makes up the system crystal. SiO ２If the SiO content is too low, the processability with a laser will decrease, and the liquid-phase viscosity of the glass will decrease, making it difficult to mold the glass and easily reducing productivity. Therefore, ２ The lower limit of is preferably 30% or more, more preferably 35% or more, more preferably 40% or more, more preferably 45% or more, more preferably 49% or more, more preferably 50% or more, more preferably 55% or more, more preferably 60% or more, more preferably 65% ​​or more, more preferably 68% or more, and particularly preferably 70% or more. On the other hand, SiO ２ If the content is too high, the melting properties of the glass will decrease, the viscosity of the glass melt will increase, making it difficult to clarify, and the molding of the glass will become difficult, which will easily reduce productivity. Also, the time required for crystallization will increase, which will easily reduce productivity. Furthermore, crystals other than the desired crystal (e.g., quartz crystals) such as α-cordierite tend to precipitate. Therefore, SiO ２ The upper limit is preferably 90% or less, more preferably 80% or less, more preferably 75% or less, and particularly preferably 74% or less.

[0078] Al ２ O ３ is MgO-Al ２ O ３ -SiO ２ It is a component that makes up the system crystal. Al ２ O ３ If the content is too low, it becomes difficult for desired crystals such as α-cordierite to precipitate, making it difficult to improve the rigidity of the glass substrate. Therefore, Al ２ O ３ The lower limit of is preferably more than 0%, more preferably 1.5% or more, more preferably 5% or more, more preferably 10% or more, and more preferably 11% or more. On the other hand, Al ２ O ３ If the content of Al is too high, the viscosity of the glass melt decreases too much, making it difficult to mold the glass and consequently reducing productivity. In addition, crystals such as mullite may precipitate, causing the glass to devitrify, and the crystallized glass becomes more fragile. Therefore, Al ２ O ３The upper limit is preferably 50% or less, more preferably 40% or less, more preferably 30% or less, more preferably 25% or less, more preferably 20% or less, and particularly preferably 15% or less.

[0079] MgO is MgO-Al ２ O ３ -SiO ２ MgO is a component that makes up the system crystal. If the MgO content is too low, it becomes difficult to precipitate desired crystals such as α-cordierite, and it becomes difficult to improve the rigidity of the substrate. Therefore, the lower limit of MgO is preferably greater than 0, more preferably 1% or more, more preferably 2% or more, more preferably 3% or more, more preferably 4% or more, more preferably 5% or more, more preferably 6% or more, more preferably 7% or more, more preferably 8% or more, more preferably 9% or more, and particularly preferably 10% or more. On the other hand, if the MgO content is too high, the viscosity of the glass melt decreases too much, making it difficult to mold the glass, and as a result, productivity tends to decrease. Therefore, the upper limit of MgO is preferably 40% or less, more preferably 36.5% or less, more preferably 36% or less, more preferably 34% or less, more preferably 32% or less, more preferably 30% or less, more preferably 28% or less, more preferably 26% or less, more preferably 24% or less, more preferably 22% or less, more preferably 20% or less, and particularly preferably 15% or less.

[0080] In addition to the above components, the glass substrate of this embodiment also contains Li ２ O 0-3%, Na ２ O 0-20%, K ２ O 0-20%, CaO 0-20%, SrO 0-20%, BaO 0-20%, ZnO 0-20%, B ２ O ３ 0-20%, P ２ O ５ 0-20%, TiO ２ 0-20%, ZrO ２ 0-20%, SnO ２ It may contain 0-20%.

[0081] Li ２ O is MgO-Al ２ O ３-SiO ２ It is a component that can be solid-solved in the system crystal, greatly influencing its crystallinity, and also lowering the viscosity of the glass, thereby improving its meltability and moldability. On the other hand, the demand for lithium raw materials is rapidly increasing for applications such as lithium-ion batteries, and the price of lithium raw materials is soaring globally, so Li is used as much as possible. ２ It is required to keep the O content low. Also, Li ２ If the oxygen content is too high, the coefficient of thermal expansion becomes too large, making it difficult to improve heat resistance and thermal shock resistance. Therefore, Li ２ The upper limit of O is preferably 3% or less, more preferably 2.5% or less, more preferably 2% or less, more preferably 1.5% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. On the other hand, Li ２ O is easily mixed in as an impurity, Li ２ Attempting to completely remove oxygen tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, Li ２ The lower limit of O is preferably 0.0001% or more, more preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.003% or more, more preferably 0.005% or more, and particularly preferably 0.01% or more.

[0082] Na ２ If the O content is too high, the glass will be more prone to devitrification, and the desired MgO-Al will also be lost. ２ O ３ -SiO ２ Because it becomes difficult for the system crystals to precipitate, it is difficult to improve the rigidity and toughness of the glass. Therefore, Na ２ The upper limit of O is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, more preferably less than 2.5%, more preferably 1.5% or less, more preferably less than 1.5%, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. However, Na ２ O is easily mixed in as an impurity, so Na ２Attempting to completely remove oxygen tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, Na ２ The lower limit of O is preferably 0.0001% or more, more preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.003% or more, more preferably 0.005% or more, and particularly preferably 0.01% or more.

[0083] K ２ If the O content is too high, the glass becomes more prone to devitrification, which reduces the productivity of the glass. Therefore, K ２ The upper limit of O is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. On the other hand, K ２ O is easily mixed in as an impurity, so K ２ Attempting to completely remove O tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, K ２ The lower limit of O is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0084] Li ２ O, Na ２ O, K ２ O is a component that improves the meltability and moldability of glass, but if the content of these components is too high, the viscosity will drop too low, and there is a risk that the glass will become too soft during crystallization. Also, Li ２ O, Na ２ O, K ２ Too much oxygen reduces the chemical durability of the glass. On the other hand, SiO ２ The main crystal is MgO-Al ２ O ３ -SiO ２It is a component that constitutes the system crystal, and when included in an appropriate amount, it improves the viscosity of the glass and suppresses the softening of residual glass. It is also a component that improves the chemical durability of the glass. Therefore, in order to optimize the viscosity characteristics of the glass and efficiently promote crystal precipitation while obtaining crystallized glass with high chemical durability, (Li ２ O + Na ２ O+K ２ O) / SiO ２ (Li ２ O, Na ２ O and K ２ Total O content and SiO ２ The ratio of the content of (Li) is preferably controlled within a suitable range. ２ O + Na ２ O+K ２ O) / SiO ２ The upper limit range is preferably 0.1 or less, more preferably 0.05 or less, more preferably 0.03 or less, more preferably 0.01 or less, more preferably 0.008 or less, more preferably 0.007 or less, more preferably 0.006 or less, more preferably 0.005 or less, more preferably 0.002 or less, and particularly preferably 0.001 or less. Also, (Li ２ O + Na ２ O+K ２ O) / SiO ２ The lower limit range is preferably 0 or more, more preferably 0.00005 or more, more preferably 0.0001 or more, more preferably 0.0002 or more, more preferably 0.0003 or more, more preferably 0.0004 or more, and particularly preferably 0.0005 or more.

[0085] CaO is a component that reduces the viscosity of glass, improving its meltability and moldability. On the other hand, if the CaO content is too high, the glass becomes more prone to devitrification, reducing the productivity of the glass. Therefore, the upper limit of CaO is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. On the other hand, since CaO is easily mixed in as an impurity, attempting to completely remove CaO tends to increase the cost of the raw material batch and thus the manufacturing cost. Therefore, the lower limit of CaO is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0086] If the SrO content is too high, the glass becomes more prone to devitrification, reducing the productivity of the glass. Therefore, the upper limit of SrO is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. On the other hand, since SrO is easily mixed in as an impurity, attempting to completely remove SrO tends to increase the cost of the raw material batch and thus the manufacturing cost. Therefore, the lower limit of SrO is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0087] If the BaO content is too high, the rigidity of the glass tends to decrease. Therefore, the upper limit of BaO is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 7% or less, more preferably 6% or less, more preferably 5% or less, more preferably 4% or less, more preferably 3% or less, more preferably 2.5% or less, more preferably 2% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably 0.3% or less. On the other hand, since BaO is easily mixed in as an impurity, if BaO is to be completely removed, the raw material batch becomes expensive and manufacturing costs tend to increase. Therefore, the lower limit of BaO is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0088] If the ZnO content is too high, the glass becomes more prone to devitrification, reducing the productivity of the glass. Therefore, the upper limit of ZnO is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 4% or less, more preferably 3.5% or less, more preferably 3% or less, more preferably 2.5% or less, more preferably 2% or less, more preferably 1.9% or less, more preferably 1.8% or less, and particularly preferably 1.5% or less. The lower limit of ZnO is preferably 0% or more, more preferably 0.1% or more, more preferably 0.5% or more, more preferably 1% or more, more preferably 3% or more, more preferably 5% or more, and particularly preferably 7% or more.

[0089] In the glass substrate of this embodiment, (SiO ２ +ZnO) / (MgO+Al ２ O ３ ) (SiO ２ The total content of ZnO, and MgO and Al ２ O ３ If the ratio of the total content of (SiO) is too large, α-cordierite crystals become difficult to precipitate, and the thermal expansion coefficient of the resulting crystallized glass tends to be high. Therefore, (SiO ２ +ZnO) / (MgO+Al ２ O ３The upper limit range of (SiO) is preferably 5 or less, more preferably 4 or less, more preferably 3.5 or less, and particularly preferably 3.2 or less. ２ +ZnO) / (MgO+Al ２ O ３ If the (SiO) is too small, the liquidus temperature of the glass tends to rise, making it prone to devitrification during manufacturing. Therefore, (SiO ２ +ZnO) / (MgO+Al ２ O ３ The lower limit range of ) is preferably 0.5 or higher, more preferably 0.7 or higher, more preferably 0.8 or higher, more preferably 0.9 or higher, more preferably 1 or higher, and particularly preferably 1.2 or higher.

[0090] B ２ O ３ This component reduces the viscosity of the glass, thereby improving its meltability and moldability. Therefore, B ２ O ３ The lower limit of is preferably 0% or more, more preferably 0.1% or more, and particularly preferably 0.2% or more. On the other hand, B ２ O ３ If the content is too high, B during melting ２ O ３ The amount of evaporation increases, leading to a higher environmental burden. Furthermore, surface crystallization tends to proceed excessively, easily reducing the mechanical strength of the resulting crystallized glass. Therefore, B ２ O ３ The upper limit of is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, and particularly preferably 1% or less. However, B ２ O ３ Because it is easily mixed in as an impurity, B ２ O ３ Attempting to completely remove it tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, B ２ O ３ The lower limit of the amount is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0091] P ２ O ５This is a component that reduces the viscosity of glass and improves its meltability and moldability. On the other hand, P ２ O ５ If the content is too high, MgO-Al ２ O ３ -SiO ２ The amount of precipitated systemic crystals decreases, and the resulting crystallized glass tends not to have high rigidity or toughness. Therefore, P ２ O ５ The upper limit of is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, and particularly preferably 3% or less. However, P ２ O ５ Because it is easily mixed in as an impurity, P ２ O ５ Attempting to completely remove P tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, ２ O ５ The lower limit is preferably 0.0001% or more, more preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, more preferably 0.05% or more, and particularly preferably 0.1% or more.

[0092] TiO ２ It is a component that reduces the viscosity of glass, improving its meltability and moldability. It is also a component that promotes crystallization, and is MgO-Al ２ O ３ -SiO ２ It can also be expected to act as a nucleating agent that allows for good precipitation of system crystals. Therefore, TiO ２ The lower limit of TiO is preferably greater than 0%, more preferably 0.005% or more, more preferably 0.01% or more, more preferably 0.1% or more, more preferably 1% or more, more preferably 2% or more, and particularly preferably 2.5% or more. ２ If the content is too high, the precipitated crystals may become enlarged. When the crystals become enlarged, the devitrification of the glass increases, making it difficult to mold, which may reduce productivity. Therefore, TiO ２The upper limit of the amount is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 8% or less, more preferably 5% or less, more preferably 4% or less, and particularly preferably 3.5% or less.

[0093] ZrO ２ Although it is a component that promotes crystallization, if the content is too high, coarse ZrO ２ Crystals precipitate, and the crystallized glass devitrifies, which easily reduces productivity. Therefore, ZrO ２ The upper limit of is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, and particularly preferably 1% or less. On the other hand, ZrO ２ By adding an appropriate amount of MgO-Al ２ O ３ -SiO ２ Because the crystallite size and deposition amount of the system crystal can be controlled, it can contribute to improving the rigidity and toughness of the glass substrate. Therefore, ZrO ２ The lower limit is preferably greater than 0%, more preferably 0.005% or more, more preferably 0.01% or more, more preferably 0.1% or more, and particularly preferably 0.2% or more.

[0094] HfO ２ It is a component that improves the Young's modulus and stiffness of glass, as well as a component that reduces the viscosity of glass and improves its meltability and moldability. On the other hand, HfO ２ If the content is too high, the raw materials obtained will be expensive, leading to increased manufacturing costs. Therefore, HfO ２ The upper limit of is preferably 10% or less, more preferably 5% or less, more preferably 1.5% or less, more preferably 1% or less, more preferably 0.5% or less, more preferably 0.3% or less, more preferably 0.1% or less, and particularly preferably 0.05% or less. ２ There is no particular lower limit to the content, and it is 0% or more, but HfO ２ HfO is a component that can be introduced from the raw materials used, and the amount of contamination varies depending on the composition of the raw materials. ２In practice, the lower limit is preferably 0.0001% or more, more preferably 0.0003% or more, and particularly preferably 0.0005% or more.

[0095] SnO ２ SnO ２ →SnO + 1 / 2O ２ This reaction occurs, and O is added to the glass melt. ２ It releases gas. This reaction is SnO ２ It is known as a clarification mechanism, but the O released during the reaction ２ The gas has a "de-foaming effect" that enlarges the fine bubbles present in the molten glass and releases them outside the glass system, as well as a "stirring effect" that mixes the molten glass. Furthermore, in the glass substrate of this embodiment, it is also a component that promotes crystallization, and by including an appropriate amount, it becomes easier to obtain crystallized glass with the desired high rigidity and toughness. On the other hand, if included in large quantities, it is a component that significantly intensifies the coloration of the glass and at the same time tends to increase devitrification. Therefore, SnO ２ The upper limit of is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, more preferably 5% or less, more preferably 3% or less, more preferably 1% or less, more preferably 0.5% or less, more preferably 0.3% or less, and particularly preferably 0.1% or less. However, SnO ２ Because it is easily mixed in as an impurity, SnO ２ Attempting to completely remove it tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, SnO ２ The lower limit is preferably greater than 0%, more preferably 0.005% or more, more preferably 0.01% or more, and particularly preferably 0.05% or more.

[0096] The glass substrate of this embodiment may also contain the following components in addition to the components mentioned above.

[0097] Fe ２ O ３ Because it is easily mixed in as an impurity, Fe ２ O ３ Attempting to completely remove Fe tends to increase the cost of raw material batches and thus the overall manufacturing cost. ２ O ３The lower limit of is preferably 0.0001% or more, more preferably 0.0002% or more, more preferably 0.0003% or more, more preferably 0.0005% or more, and particularly preferably 0.001% or more. Also, Fe ２ O ３ The upper limit is preferably 0.2% or less, more preferably 0.1% or less, and particularly preferably 0.01% or less.

[0098] As ２ O ３ As is produced at high temperatures ２ O ５ →As ２ O ３ +O ２ This reaction occurs, and O is added to the glass melt. ２ It releases gas. This reaction is As ２ O ３ This is known as a clarification mechanism, and the O2 gas released during the reaction enlarges the fine bubbles present in the glass melt and has a "defoaming effect" that releases them outside the glass system. On the other hand, As ２ O ３ If the content is too high, As ２ O ３ As is a toxic component and may contaminate the environment during glass manufacturing processes and waste glass disposal. ２ O ３ The upper limit of As is preferably 20% or less, more preferably 5% or less, more preferably 1% or less, and particularly preferably 0.1% or less. ２ O ３ As is easily mixed in as an impurity. ２ O ３ Attempting to completely remove it tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, As ２ O ３ The lower limit is preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, and particularly preferably 0.02% or more.

[0099] Sb ２ O ３ Sb ２ O ５→Yb ２ O ３ +O ２ This reaction occurs, and O is added to the glass melt. ２ It releases gas. This reaction is Sb ２ O ３ It is known as a clarification mechanism, and the O released during the reaction ２ The gas has a "degassing effect" that enlarges the tiny bubbles present in the molten glass and releases them outside the glass system. On the other hand, Sb ２ O ３ If the content is too high, Sb ２ O ３ Because it is a toxic component, it may contaminate the environment during the glass manufacturing process or the disposal of waste glass. Therefore, Sb ２ O ３ The upper limit of Sb is preferably 20% or less, more preferably 5% or less, more preferably 1% or less, and particularly preferably 0.1% or less. ２ O ３ Sb is easily mixed in as an impurity. ２ O ３ Attempting to completely remove Sb tends to increase the cost of raw material batches and thus the overall manufacturing cost. ２ O ３ The lower limit is preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, and particularly preferably 0.02% or more.

[0100] Cl ２ At high temperatures, the reaction NaCl → NaCl gas occurs, releasing NaCl gas into the glass melt. This reaction is Cl ２ This is known as a clarification mechanism, and the NaCl gas released during the reaction enlarges the fine bubbles present in the glass melt and has a "degassing effect" that releases them outside the glass system. On the other hand, Cl ２ If the content is too high, Cl ２ Because it is a toxic component, it can contaminate the environment during the glass manufacturing process and the disposal of waste glass. Therefore, Cl ２The upper limit of is preferably 20% or less, more preferably 5% or less, more preferably 1% or less, and particularly preferably 0.1% or less. On the other hand, Cl ２ Attempting to completely remove Cl tends to increase the cost of raw material batches and thus the overall manufacturing cost. Therefore, ２ The lower limit is preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, and particularly preferably 0.02% or more.

[0101] As ２ O ３ and Sb ２ O ３ Because it is a toxic component, if it is included in large quantities, it may contaminate the environment during the glass manufacturing process or the disposal of waste glass. Therefore, As ２ O ３ +Sb ２ O ３ (As ２ O ３ and Sb ２ O ３ The upper limit of the total content of the components is preferably 20% or less, more preferably 5% or less, more preferably 1% or less, more preferably 0.5% or less, and particularly preferably less than 0.3%. On the other hand, these components function as clarifying agents in the glass melt and have a "defoaming effect" that enlarges the fine bubbles present in the glass melt and releases them outside the glass system. Therefore, when improving the foam-removing properties of glass, As ２ O ３ +Sb ２ O ３ The lower limit is preferably greater than 0%, more preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, and particularly preferably 0.05% or more.

[0102] SnO ２ As ２ O ３ Sb ２ O ３ , Cl ２Because it is toxic, if it is contained in large quantities, it may contaminate the environment during the glass manufacturing process or the disposal of waste glass. Therefore, SnO ２ +As ２ O ３ +Sb ２ O ３ +Cl ２ (SnO ２ As ２ O ３ Sb ２ O ３ , Cl ２ The upper limit of the total content of these components is preferably 20% or less, more preferably 5% or less, more preferably 3% or less, more preferably 2% or less, more preferably 1% or less, more preferably 0.3% or less, and particularly preferably 0.2% or less. On the other hand, these components function as clarifying agents in the glass melt and have a "defoaming effect" that enlarges the fine bubbles present in the glass melt and releases them outside the glass system. Therefore, to improve the defoaming properties of glass, SnO ２ As ２ O ３ Sb ２ O ３ , Cl ２ Preferably, it contains at least one of the following: SnO ２ +As ２ O ３ +Sb ２ O ３ +Cl ２ The lower limit is preferably greater than 0%, more preferably 0.0003% or more, more preferably 0.0005% or more, more preferably 0.001% or more, more preferably 0.005% or more, more preferably 0.01% or more, more preferably 0.05% or more, and particularly preferably 0.1% or more.

[0103] SnO ２ It not only has a clarifying effect but also promotes crystallization. Also, SnO ２ is SnO ２ As also has a clarifying effect ２ O ３ Sb ２ O ３ and Cl ２Compared to [another substance], it has lower toxicity and is less likely to pollute the environment. Therefore, in order to efficiently obtain desired properties with low environmental impact, while improving the de-bubbling properties of glass and further promoting glass crystallization, SnO ２ As ２ O ３ Sb ２ O ３ and Cl ２ Among the components that have a clarifying effect, SnO ２ It is preferable to actively include SnO ２ / (As ２ O ３ +Sb ２ O ３ +SnO ２ +Cl ２ ) (SnO ２ Content and SnO ２ As ２ O ３ Sb ２ O ３ , Cl ２ The lower limit of the ratio of the total content of is preferably 0.00003 or higher, more preferably 0.0003 or higher, more preferably 0.003 or higher, more preferably 0.03 or higher, more preferably 0.05 or higher, more preferably 0.1 or higher, more preferably 0.5 or higher, and particularly preferably 0.7 or higher. The upper limit is not particularly limited, but in practice, it is preferably 10 or lower.

[0104] In this embodiment, the glass substrate may contain, in addition to the above-mentioned components, for example, H, as long as it does not adversely affect the acquisition of desired properties, when the purpose is to promote crystallization, color the glass substrate, or impart other functions. ２ CO ２ CO, H ２ O, He, Ne, Ar, N ２ These trace components may be included in amounts up to 0.1% each.

[0105] Intentionally adding Ag, Au, Pd, Ir, Sc, Ce, Pr, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, U, etc. to glass tends to increase raw material costs and thus manufacturing costs. On the other hand, when glass containing Ag, Au, etc. is subjected to light irradiation or heat treatment, aggregates of these components are formed, which can promote crystallization. Furthermore, Pd, etc., has various catalytic properties, and by including them, it is possible to impart unique functions to crystallized glass. Considering these circumstances, when the purpose is to promote crystallization, color the glass substrate, or impart other functions, the above components may be included in the ranges of 1% or less, 0.5% or less, 0.3% or less, and 0.1% or less, respectively. If not, preferably 500 ppm or less, more preferably 300 ppm or less, more preferably 100 ppm or less, and particularly preferably 10 ppm or less.

[0106] Furthermore, unless there is an adverse effect when trying to obtain the desired characteristics, the glass substrate of this embodiment is SO ３ MnO, Y ２ O ３ La ２ O ３ , HfO ２ Ta ２ O ５ , Nb ２ O ５ , RfO ２ These ingredients may be included in a total amount of up to 10%. However, since the raw material batches of the above ingredients are expensive and tend to increase manufacturing costs, they do not need to be added unless there are special circumstances.

[0107] The glass substrate according to this embodiment preferably has the following characteristics.

[0108] The fracture toughness value is preferably 0.8 MPa·m ０．５ More preferably, 0.82 MPa·m ０．５ More preferably, 0.84 Pa·m ０．５ The above is particularly preferable at 0.86 MPa·m ０．５This concludes the explanation. As a result, when used as a core substrate or interposer in a package substrate, the glass substrate can be made less susceptible to breakage. Furthermore, the fracture toughness value is, for example, 2.0 MPa·m. ０．５ The following are also acceptable.

[0109] The degree of crystallinity is preferably 5% or more, more preferably 10% or more, more preferably 20% or more, more preferably 30% or more, more preferably 35% or more, more preferably 40% or more, more preferably 45% or more, more preferably 50% or more, more preferably 55% or more, more preferably 60% or more, more preferably 65% ​​or more, more preferably 70% or more, more preferably 75% or more, more preferably 80% or more, more preferably 85% or more, and particularly preferably 90% or more. Increasing the degree of crystallinity makes it easier to increase the fracture toughness value of the glass substrate.

[0110] The average coefficient of thermal expansion CTE in the temperature range of 30 to 380°C is -10 × 10 －７ / ℃ or higher 150 x 10 －７ / ℃ or below, or 5 × 10 －７ / ℃ or higher 150 x 10 －７ A temperature of 0 / °C or lower is preferable. This makes it less likely for the glass substrate to break during the cooling process associated with heat treatment in the crystallization process and the package substrate fabrication process. In addition, the thermal expansion coefficients of the glass substrate and the various films can be matched, making it less likely for defects such as film peeling to occur. It is preferable to adjust the average thermal expansion coefficient CTE in the temperature range of 30 to 380°C to match the thermal expansion coefficients of the Si material, resin material, copper-clad laminate substrate, etc. that constitute the package substrate.

[0111] The Young's modulus is preferably 70 GPa or higher, more preferably 75 GPa or higher, more preferably 80 GPa or higher, and particularly preferably 85 GPa or higher. A Young's modulus within this range makes warping less likely during film formation and semiconductor device mounting onto the glass substrate. This suppresses film delamination and damage to the glass substrate and semiconductor device. Alternatively, the Young's modulus may be 100 GPa or lower.

[0112] The density is preferably 2.6 g / cm³. ３More preferably, 2.58 g / cm³ ３ More preferably, 2.56 g / cm³ ３ The following is particularly preferred: 2.54 g / cm³ ３ The following applies. The density is 2.38 g / cm³. ３ The above is also acceptable. This makes it possible to lighten the glass substrate. Note that SiO in the glass composition ２ , B ２ O ３ , P ２ O ５ Increase the content of alkali metal oxides, alkaline earth metal oxides, ZnO, ZrO ２ , TiO ２ Reducing the amount of this substance will make it easier for the density to decrease.

[0113] The preferred range for the thickness of the glass substrate according to the third embodiment and the reason for this is as described in the first embodiment.

[0114] The glass substrates according to the first to third embodiments are used in semiconductor packages, specifically as package substrates used for mounting semiconductor elements. The substrates according to the first to third embodiments are preferably used in interposers, core substrates, and the like. The glass substrates according to the first to third embodiments offer excellent productivity and are less prone to breakage. Therefore, they are suitable for applications such as interposers and core substrates.

[0115] [Fourth Embodiment] Next, a perforated glass substrate for semiconductor packaging (hereinafter referred to as "perforated glass substrate") according to the fourth embodiment of the present invention will be described. The perforated glass substrate according to this embodiment has through holes and is manufactured by forming through holes in the glass substrate (non-perforated glass substrate) according to the first to third embodiments. Therefore, the perforated glass substrate according to the fourth embodiment has the same glass composition and properties as the glass substrate according to the first to third embodiments.

[0116] Figure 1 is a top view showing a perforated glass substrate G1 according to this embodiment, and Figure 2 is a cross-sectional view of the perforated glass substrate G1 of Figure 1 taken along line A-A. As shown in Figures 1 and 2, the perforated glass substrate G1 according to this embodiment comprises a first main surface G1a, a second main surface G1b which is the opposite surface of the first main surface G1a, and a through hole 1 that penetrates between the first main surface G1a and the second main surface G1b. A first example of the through hole 1 is a constricted portion 1b in the center of the perforated glass substrate G1 in the thickness direction Z, with a diameter smaller than the diameter of the through hole 1 on the first main surface G1a and the second main surface G1b. In other words, the side surface 1a of the through hole 1 is inclined with respect to the thickness direction Z.

[0117] Figure 3 is a schematic cross-sectional view showing a first example of a through-hole 1 formed in a perforated glass substrate G1 according to one embodiment of the present invention. The diameter D1 of the through-hole 1 on the first main surface G1a and the diameter D2 of the through-hole 1 on the second main surface G1b can be measured, for example, by observing the surface of the perforated glass substrate G1 with a transmission optical microscope and measuring the length from the image. The diameter D3 of the constricted portion 1b of the through-hole 1, the distance t1 between the first main surface G1a and the constricted portion 1b, and the distance t2 between the second main surface G1b and the constricted portion 1b can be measured by scribing the perforated glass substrate G1 so that the inner surface of the through-hole 1 is not exposed, observing the inside of the through-hole 1 with a transmission optical microscope from a direction perpendicular to the cross-section with the focus on the inside of the through-hole 1, and measuring the length from the image. As a transmission optical microscope, for example, a Nikon ECLIPSE LV100ND can be used.

[0118] The diameters D1 and D2 of the through holes 1 are preferably 200 μm or less, more preferably 180 μm or less, more preferably 160 μm or less, more preferably 150 μm or less, more preferably 130 μm or less, more preferably 100 μm or less, more preferably 90 μm or less, more preferably 80 μm or less, more preferably 70 μm or less, more preferably 60 μm or less, and particularly preferably 50 μm or less. Thereby, the through holes 1 can be formed at a high density, and when the porous glass substrate G1 is used for manufacturing a core substrate or an interposer, the wiring density can be increased. Further, the diameters D1 and D2 of the through holes 1 are preferably 5 μm or more, more preferably 10 μm or more, more preferably 15 μm or more, more preferably 20 μm or more, more preferably 25 μm or more, and particularly preferably 30 μm or more. Thereby, when forming a conductive portion inside the through hole 1 by plating, it becomes difficult to form voids in the conductive material, and a problem of non-conduction between the first main surface G1a and the second main surface G1b can be suppressed.

[0119] The ratio (D3 / D1, D3 / D2) of the diameter D3 of the constricted portion 1b to the diameters D1 and D2 of the through holes 1 is preferably 99% or less, more preferably 95% or less, more preferably 90% or less, more preferably 85% or less, and particularly preferably 80% or less. Thereby, when forming a conductive portion inside the through hole 1 by plating, it becomes easy to form a seed layer inside the hole by sputtering, and it becomes easy to ensure the adhesion of the plating. Further, the ratio (D3 / D1, D3 / D2) is preferably 5% or more, more preferably 10% or more, more preferably 15% or more, more preferably 20% or more, more preferably 25% or more, more preferably 30% or more, more preferably 35% or more, more preferably 40% or more, more preferably 45% or more, and particularly preferably 50% or more. Thereby, when forming a conductive portion inside the through hole 1 by plating, it becomes easy to fill the conductive material, and a problem of non-conduction between the first main surface G1a and the second main surface G1b can be suppressed.

[0120] The average taper angle θ1 of the first through-hole 1 can be evaluated as follows. First, the taper angle θ1a of the side surface on the first main surface G1a side of the through-hole 1 and the taper angle θ1b of the side surface on the second main surface G1b side of the through-hole 1 are calculated by the following equations (1) and (2). θ1a = arctan((D1 - D3) / (2 × t1)) Equation (1) θ1b = arctan((D2 - D3) / (2 × t2)) Equation (2)

[0121] Subsequently, the average taper angle θ1 of the through-hole 1 is calculated by the following equation (3). θ1 = (θ1a + θ1b) / 2 Equation (3)

[0122] FIG. 4 is a cross-sectional view schematically showing a second example of the through-hole 1 formed in the perforated glass substrate G1 according to an embodiment of the present invention. As shown in FIG. 4, the through-hole 1 of the second example does not have a constricted portion at the central portion in the plate thickness direction Z of the perforated glass substrate G1. Further, in the through-hole 1 of the second example, the diameter D1 of the through-hole 1 on the first main surface G1a is different from the diameter D2 of the through-hole 1 on the second main surface G1b, and the side surface 1a of the through-hole 1 is inclined with respect to the plate thickness direction Z.

[0123] The taper angle θ2 of the through-hole of the second example having no constricted portion is calculated by the following equation (4). θ2 = arctan((D1 - D2) / (2 × t)) Equation (4)

[0124] The diameters D1 and D2 of the through-hole 1 of the second example are preferably in the same numerical range as the diameters D1 and D2 of the through-hole 1 of the first example.

[0125] [Fifth Embodiment] Subsequently, a perforated glass substrate for a semiconductor package (hereinafter referred to as "perforated glass substrate") according to the fifth embodiment of the present invention will be described. The perforated glass substrate according to the present embodiment has non-through-holes and is manufactured by forming non-through-holes in the glass substrates (non-perforated glass substrates) according to the first to third embodiments. Therefore, the perforated glass substrate according to the fifth embodiment has the same glass composition and characteristics as the glass substrates according to the first to third embodiments.

[0126] Figure 5 is a top view showing a perforated glass substrate G2 according to this embodiment, and Figure 6 is a cross-sectional view of the perforated glass substrate G2 of Figure 5 taken along line B-B. As shown in Figures 5 and 6, the perforated glass substrate G2 according to this embodiment comprises a first main surface G2a, a second main surface G2b which is the opposite surface of the first main surface G2a, and non-through holes 2 provided on the first main surface G2a and the second main surface G2b. The diameter of the non-through holes 2 decreases as they move inward from the first main surface G2a and the second main surface G2b in the thickness direction, and the bottom portion 2b of the non-through hole is provided at the point where the diameter is smallest. In other words, the side surface 2a of the non-through hole 2 is inclined with respect to the thickness direction Z. In this embodiment, non-through holes 2 are formed on both the first main surface G2a and the second main surface G2b, but non-through holes 2 may be formed on either the first main surface G2a or the second main surface G2b.

[0127] Figure 7 is a schematic cross-sectional view showing a non-through hole 2 formed in a perforated glass substrate G2 according to one embodiment of the present invention. The diameter D4 of the non-through hole 2 on the first main surface G2a and the diameter D5 of the non-through hole 2 on the second main surface G2b can be measured in the same way as the diameters D1 and D2 of the through hole 1 in the fourth embodiment. The distance t3 between the first main surface G2a and the bottom 2b of the non-through hole, and the distance t4 between the second main surface G2b and the bottom 2b of the non-through hole can be measured in the same way as the distances t1 and t2 in the fourth embodiment.

[0128] The average taper angle θ3 of the non-through hole 2 can be evaluated as follows. First, the taper angle θ3a of the side surface on the first main surface G2a side of the non-through hole 2, and the taper angle θ3b of the side surface on the second main surface G2b side of the non-through hole 2 are calculated using the following equations 5 and 6. θ3a = arctan(D4 / (2×t3)) Equation 5 θ3b = arctan(D5 / (2×t4)) Equation 6

[0129] Next, the average taper angle θ2 of the non-through hole 2 is calculated using the following equation 7: θ3 = (θ3a + θ3b) / 2 Equation 7

[0130] [Sixth Embodiment] Next, a method for manufacturing a perforated glass substrate for semiconductor packaging according to the sixth embodiment of the present invention will be described with reference to Figures 8 to 10. As shown in Figure 8, the method for manufacturing a perforated glass substrate according to this embodiment comprises a preparation step S1 for preparing a glass substrate G0, a laser modification step S2 for irradiating the glass substrate G0 with laser light to form modified portions in the portions to be formed of through-holes 1 or non-through-holes 2, and an etching step S3 for etching the glass substrate G0 having the modified portions to form perforated glass substrates G1 and G2 having through-holes 1 or non-through-holes 2.

[0131] In preparation step S1, glass substrates G0 according to the first to third embodiments of the present invention are prepared. First, glass raw materials are placed in a glass melting furnace and heated to melt them, thereby obtaining molten glass. Next, the molten glass is formed into a plate shape by methods such as the overflow method, float method, slot-down method, or roll-out method to obtain a crystalline glass plate (a glass plate that can be crystallized before crystallization). Subsequently, the crystalline glass plate is heat-treated to crystallize it, thereby obtaining a glass substrate. As for the crystallization conditions, depending on the composition of the glass substrate G0, crystallized glass can be obtained under the conditions described in the examples below.

[0132] In the laser modification process S2, as shown in Figure 9, the glass substrate G0 is placed flat with the second main surface G0b facing downwards. The glass substrate G0 may also be placed on a surface plate (not shown), for example. The irradiation unit of the laser irradiation device 3 is positioned away from the first main surface G0a of the glass substrate G0 so as to face the first main surface G0a. The irradiation unit of the laser irradiation device 3 is configured to be movable in three dimensions by a drive device (not shown).

[0133] Next, the laser irradiation device 3 irradiates the first main surface G0a of the glass substrate G0 with laser light 3a perpendicular to it. It is preferable that the laser irradiation device 3 irradiates with a pulsed laser. With a pulsed laser, the glass substrate G0 can be heated efficiently by increasing the energy per pulse, and the glass substrate G0 can be prevented from being damaged by heat diffusion by shortening the pulse duration. It is preferable that the laser light 3a is a picosecond laser or a femtosecond laser, and the pulse width is preferably, for example, 50 fs or more and 100 ps or less. It is also preferable that the energy per pulse of the laser light 3a is, for example, 10 μJ or more and 300 μJ or less.

[0134] It is preferable to use a wavelength of laser light 3a between 400 nm and 1100 nm. For example, the wavelength of laser light 3a is 515 nm or 1030 nm.

[0135] The laser irradiation device 3 preferably shapes the laser beam 3a into a Gaussian beam shape or a Bessel beam shape using an optical system (not shown) including, for example, an axicon lens, and the use of a Bessel beam shape is particularly preferred. By shaping the laser beam 3a into a Bessel beam shape, a modified portion Gm can be formed over the entire thickness direction of the glass substrate with a single laser irradiation, thereby shortening the time required to form the modified portion Gm. In this embodiment, the focal length of the laser beam 3a is, for example, 0.1 mm or more and 10 mm or less. The spot diameter of the laser beam 3a is, for example, 0.1 μm or more and 10 μm or less.

[0136] When the laser irradiation device 3 irradiates the glass substrate G0 with laser light 3a toward the first main surface G0a, modified portions Gm are formed on the glass substrate G0. By repeatedly moving the irradiation position of the laser light 3a relative to the glass substrate G0 and irradiating with the laser light 3a, multiple modified portions Gm are formed on the glass substrate G0. In this embodiment, each time the laser irradiation device 3 irradiates with one pulse of laser light 3a, the irradiation position of the laser light 3a relative to the glass substrate G0 is moved. In other words, each of the multiple modified portions Gm is formed by a single pulse of laser light 3a.

[0137] In etching step S3, the glass substrate G0, on which the modified portion Gm was formed in the laser modification step S2 described above, is immersed in an etching solution to remove the modified portion Gm and form through-holes 1 or non-through-holes 2. The type of etching solution is not particularly limited as long as the etching rate of the modified portion Gm is higher than the etching rate of the non-modified portion, for example, an aqueous HF solution, an aqueous NaOH solution, or an aqueous KOH solution can be used. As an etching solution, an aqueous HF solution is particularly preferred because it has a high etching rate and can shorten the time of etching step S3. In addition, HCl and H are added to the aqueous HF solution. ２ SO4, HNO ３ One or more acids may be added to form a mixed aqueous solution. A surfactant may also be added to the etching solution. In etching step S3, after the modified portion Gm is removed to form through-holes 1 or non-through-holes 2, the non-modified portion around the modified portion Gm may be removed by etching to widen the diameter of through-holes 1 or non-through-holes 2 until the diameter of through-holes 1 or non-through-holes 2 reaches a desired value.

[0138] The temperature of the etching solution is not particularly limited, but it is preferable to lower the temperature of the etching solution in order to reduce the average taper angles θ1 and θ2. When using an etching solution containing HF, the upper limit of the etching solution temperature is preferably 30°C or lower, more preferably 20°C or lower, more preferably 10°C or lower, and particularly preferably 5°C or lower. Lowering the temperature of the etching solution lowers the etching rate, which reduces the amount of residue generated in the etching process S3, and makes it easier to scrape out the residue from inside the hole. As a result, etching of the hole tip is less likely to be hindered by residue during the formation of through-holes 1 or non-through-holes 2, and the average taper angles θ1 and θ2 tend to become smaller. Also, when using an etching solution containing HF, the lower limit of the etching solution temperature may be above 0°C. When using an alkaline etching solution such as an aqueous NaOH solution or an aqueous KOH solution, the lower limit of the etching solution temperature is preferably 80°C or higher, more preferably 90°C or higher, more preferably 100°C or higher, and particularly preferably 110°C or higher. This allows for a higher etching rate and shortens the time required for the etching process. Furthermore, when using alkaline etching solutions such as NaOH aqueous solution or KOH aqueous solution, the upper limit of the etching solution temperature is preferably 130°C or lower, and particularly preferably 120°C or lower. This allows for a lower etching rate and reduces the average taper angles θ1 and θ2.

[0139] The concentration of the etching solution is not particularly limited and may be changed as appropriate to obtain the desired shape of the through-hole 1 or non-through-hole 2. For example, the concentration of the etching solution may be changed during the formation of the through-hole 1 or non-through-hole 2. During the execution of etching step S3, the concentration of the etching solution changes, so it is preferable to circulate or replace the etching solution to maintain a constant concentration.

[0140] In etching step S3, it is preferable to stir the etching solution or apply ultrasonic waves to the etching solution. Alternatively, the glass substrate G0 may be agitated in the etching solution. This makes it easier to scrape out residue from inside the holes, and the average taper angles θ1 and θ2 tend to decrease.

[0141] Figure 7 is a schematic diagram for comparing the glass substrate G0 before etching process S3 and the perforated glass substrate G1 after etching process S3. In Figure 7, the perforated glass substrate G1 after through-hole formation is shown by a solid line, and the glass substrate G0 before through-hole formation is shown by a dashed line. As shown in Figure 7, in etching process S3, at least one of the first main surface G0a and the second main surface G0b is removed by etching, so the thickness t of the perforated glass substrate G1 after through-hole 1 is formed is smaller than the thickness t0 of the glass substrate G0 before through-hole formation. Similarly, when forming a perforated glass substrate G2 with non-through-hole 2, the thickness is also reduced.

[0142] Furthermore, in the perforated glass substrates G1 and G2 according to this embodiment, through holes 1 or non-through holes 2 are formed by the etching process S3. Therefore, at least the side surface 1a of the through hole 1 (inside the through hole 1), the side surface 2a of the non-through hole 2 (inside the non-through hole 2), and one of the main surfaces are etched surfaces. As a result, the inside of the through hole 1, the inside of the non-through hole 2, and one of the main surfaces have excellent surface properties, are free from fine cracks, and have high strength. Therefore, by using the perforated glass substrates G1 and G2 according to this embodiment as core substrates or interposers, a package substrate that is resistant to damage can be obtained.

[0143] In etching step S3, if etching is performed from both the first main surface G0a and the second main surface G0b of the glass substrate G0, the through hole 1 of the first example described above, that is, the through hole 1 having a constricted portion 1b, is formed. On the other hand, if etching step S3 is performed with a protective film attached to either the first main surface G0a or the second main surface G0b, etching is performed only from the main surface without the protective film, and the through hole 1 of the second example described above, that is, the through hole 1 without a constricted portion 1b, is formed.

[0144] Furthermore, the present invention is not limited to the configuration of the above embodiments, nor is it limited to the effects described above. The present invention can be modified in various ways without departing from the spirit of the invention.

[0145] In the above embodiment, multiple modified portions Gm are formed in the glass substrate G0, and one non-through hole 2 is formed for each modified portion Gm, but the embodiment is not limited to this. Multiple modified portions Gm may be formed and fused together by etching to form a non-through hole with a large opening area relative to the depth dimension of the hole. Such a non-through hole is called a cavity, and when mounting semiconductor elements or the like on a glass substrate, semiconductor elements or the like can be housed in the cavity.

[0146] [Seventh Embodiment] Next, a method for manufacturing a perforated glass substrate for semiconductor packaging according to the seventh embodiment of the present invention will be described with reference to Figures 11 and 12. As shown in Figure 11, the method for manufacturing a perforated glass substrate according to this embodiment comprises a preparation step S11 for preparing a glass substrate G0, and a laser removal step S12 for removing glass by irradiating the portion of the glass substrate G0 where through holes 1 or non-through holes 2 are to be formed with laser light.

[0147] In preparation step S11, the glass substrate G0 according to the first to third embodiments is prepared in the same manner as in preparation step S1 of the sixth embodiment of the present invention.

[0148] In the laser removal process S12, as shown in Figure 12, the glass substrate G0 is placed flat with the second main surface G0b facing downwards. The glass substrate G0 may also be placed on a surface plate (not shown), for example. The irradiation unit of the laser irradiation device 4 is positioned away from the first main surface G0a so as to face the first main surface G0a of the glass substrate G0. The irradiation unit of the laser irradiation device 4 is configured to be movable in three dimensions by a drive device (not shown).

[0149] Next, the laser irradiation device 4 irradiates the first main surface G0a of the glass substrate G0 with laser light 4a perpendicular to it. It is preferable that the laser irradiation device 4 irradiates with a pulsed laser. With a pulsed laser, the glass substrate G0 can be heated efficiently by increasing the energy per pulse, and the glass substrate G0 can be prevented from being damaged by heat diffusion by shortening the pulse duration.

[0150] The laser irradiation device 4 condenses the laser beam 4a onto the surface or inside of the glass substrate G0 by means of an optical system (not shown in the figures), although the position where the laser beam 4a is condensed may be outside the glass substrate G0.

[0151] The laser irradiation device 4 irradiates the laser beam 4a at a position corresponding to the formation planned portion of the through hole 1 or the blind hole 2 toward the first main surface G0a of the glass substrate G0. In this way, by laser ablation, the glass at the location irradiated with the laser beam 4a is removed to form the through hole 1 or the blind hole 2. By repeating the movement of the irradiation position of the laser beam 4a with respect to the glass substrate G0 and the irradiation of the laser beam 4a a plurality of times, a plurality of through holes 1 or blind holes 2 are formed in the glass substrate G0. In the present embodiment, each time the laser irradiation device 4 irradiates a single pulse of the laser beam 4a, the irradiation position of the laser beam 4a with respect to the glass substrate G0 is moved. That is, the plurality of through holes #1 or blind holes #2 are each formed by a single pulse of the laser beam 4a. Note that the through hole 1 or the blind hole 2 may be formed by irradiating a plurality of laser pulses to the formation planned portion of one through hole 1 or blind hole 2.

[0152] According to the method for manufacturing the perforated glass substrate of the present embodiment, the through hole 1 or the blind hole 2 can be formed only by the laser removal process without performing an etching process, and the processing time can be shortened.

[0153] Hereinafter, the present invention will be described based on examples. Note that the following examples are merely illustrative, and the present invention is not limited to the following examples in any way.

[0154] Tables 1 to 11 show the glass composition, firing conditions, and glass properties of the glass substrate samples of the examples (Nos. 1 to 49) and comparative examples (Nos. 50, 51) of the present invention. Sample Nos. 1 to 15 are LS system crystallized glass, sample Nos. 16 to 35 are LAS system crystallized glass, and sample Nos. 36 to 49 are MAS system crystallized glass. Also, sample No. 50 is a non-alkali glass substrate, and sample No. 51 is a fused quartz substrate.

[0155] First, raw materials were prepared in the form of oxides, hydroxides, carbonates, nitrates, etc., to obtain raw material batches, resulting in glass having the compositions listed in each table. The obtained raw material batches were melted at 1300 to 1650°C, molded to a thickness of approximately 5 mm using a metal molding roll, heat-treated at 500 to 800°C for 60 minutes in an annealing furnace, and then cooled to room temperature at 50 to 150°C / h to obtain glass substrate samples. The compositions listed in the tables are the analytical values ​​of the glass actually produced. Melting was performed using the electromelting method, which is widely used in the development of glass materials. Furthermore, for the examples (No. 1 to 49), crystallization treatment was performed under the firing conditions listed in the table. Crystallization treatment was performed in an electric furnace with a heating and cooling rate of 10°C / min. For each glass substrate sample obtained in this way, the density, average thermal expansion coefficient CTE in the temperature range of 30 to 380°C, Young's modulus, strain point Ps, fracture toughness value, crystallinity, and main crystal phase were evaluated.

[0156]

[0157]

[0158]

[0159]

[0160]

[0161]

[0162]

[0163]

[0164]

[0165]

[0166]

[0167] The density was measured using the well-known Archimedes method.

[0168] The average thermal expansion coefficient CTE in the temperature range of 30 to 380°C is the value measured using a dilatometer.

[0169] Young's modulus is a value measured using a well-known resonance method.

[0170] The fracture toughness values ​​were measured using the SEPB method in accordance with JIS R1607 "Test Method for Fracture Toughness of Fine Ceramics". The fracture toughness value for each sample was calculated from the average of three points.

[0171] Crystallinity was evaluated by powder X-ray diffraction using an X-ray diffractometer (Rigaku RINT-2100). Specifically, after calculating the area of ​​the halo corresponding to the amorphous mass and the area of ​​the peak corresponding to the crystalline mass, the crystallinity was calculated using the formula [peak area] × 100 / [peak area + halo area] (%). The measurement range was set to 2θ = 10 to 60°.

[0172] The main crystalline phase was evaluated by powder X-ray diffraction using an X-ray diffractometer (Rigaku RINT-2100). The measurement range was set to 2θ = 10 to 60°.

[0173] From Tables 1 to 11, the glass substrate samples No. 1-5, 14, and 15, which are LS-type crystallized glass, the glass substrate samples No. 16, 19, and 20, which are LAS-type crystallized glass, and the glass substrate sample No. 49, which is MAS-type crystallized glass, all have a fracture toughness value of 0.8 MPa·m. ０．５ That concludes the explanation. It is believed that by using such a glass substrate, it is possible to obtain a semiconductor package substrate that is less prone to damage.

[0174] On the other hand, the glass substrate sample No. 50, which is an alkali-free glass substrate, and the glass substrate sample No. 51, which is a fused silica substrate, had a fracture toughness value of 0.8 MPa·m. ０．５ The result was less than [value missing]. Using such a glass substrate in a semiconductor package substrate may cause damage to the package substrate.

[0175] Next, through-holes were formed in glass substrate sample No. 1 using the following method. First, the glass substrate sample was cut into a rectangular shape of 40 mm x 20 mm, and polished to a predetermined thickness t0. A picosecond pulsed laser, shaped into a vessel beam, was irradiated onto this glass substrate sample from the first main surface side with an irradiation position spacing of approximately 200 μm, forming approximately 8,000 modified areas on the glass substrate.

[0176] Next, the glass substrate sample was etched under the following conditions. The glass substrate sample was placed in a polypropylene test tube containing the etching solution, and etching was performed by applying ultrasound to the etching solution. During this process, a PTFE jig was used to fix the glass substrate sample 10 mm away from the bottom of the test tube. An aqueous solution containing 30 wt% NaOH was used as the etching solution, and the etching solution temperature was set to 80°C. Etching was performed by agitating the glass in the etching solution.

[0177] The glass substrate samples obtained by this method had through-holes with constricted sections formed inside. The average taper angle θ1 of these through-holes was determined by the method described above. The etching time, the thickness of the glass substrate sample before etching, the thickness of the glass substrate sample after etching, and the shape of the through-holes are shown in Table 12.

[0178]

[0179] Next, CO was applied to glass substrate sample No. 14 using the following method. ２ Through-holes were formed by laser ablation. A glass substrate sample with a thickness of 384 μm, prepared by polishing, was placed flat with the second main surface facing downwards. Next, laser light was irradiated from the first main surface side onto the area where the through-holes were to be formed. Each area where the through-holes were to be formed was irradiated with laser light three times. Next, the glass substrate sample was placed flat with the first main surface facing downwards. Next, laser light was irradiated from the second main surface side onto the area where the through-holes were to be formed. Each area where the through-holes were to be formed was irradiated with laser light three times. 1,000 to 5,000 through-holes were formed on each glass substrate sample.

[0180] The glass substrate samples obtained by this method had non-through holes formed on the first and second main surfaces. The average taper angle θ2 of these through holes was determined by the method described above. The shapes of the through holes are shown in Table 14.

[0181]

[0182] Next, through-holes were formed in glass substrate sample No. 16 using the following method. First, the glass substrate sample was cut into a rectangular shape of 40 mm x 20 mm, and polished to a predetermined thickness t0. A picosecond pulsed laser, shaped into a Vessel beam, was irradiated onto this glass substrate sample from the first main surface side with an irradiation position spacing of approximately 200 μm, forming approximately 8,000 modified areas on the glass substrate.

[0183] Next, the glass substrate sample was etched under the following conditions. The glass substrate sample was placed in a polypropylene test tube containing the etching solution, and etching was performed by applying ultrasound to the etching solution. At this time, a PTFE jig was used to fix the glass substrate sample 10 mm away from the bottom of the test tube. An aqueous solution containing 2.5 mol / L of HF and 1.0 mol / L of HCl was used as the etching solution. The temperature of the etching solution was set to 30°C. To prevent the temperature from rising during the application of ultrasound, the water in the ultrasonic device was circulated using a chiller to maintain the water temperature at 30°C. An ultrasonic cleaner (VS-100III: manufactured by AS ONE Corporation) was used to apply ultrasonic vibrations, and 28 kHz ultrasound was applied to the etching solution.

[0184] The glass substrate samples obtained by this method had non-through holes with openings on the first and second main surfaces. The average taper angle θ2 of these through holes was determined by the method described above. The etching time, the thickness of the glass substrate sample before etching, the thickness of the glass substrate sample after etching, and the shape of the through holes are shown in Table 14.

[0185]

[0186] Table 12 shows that the glass substrate sample No. 1, which is an LS-type crystallized glass, can have holes (through-holes) formed by removing the modified areas created by laser irradiation through etching. Table 13 shows that the glass substrate sample No. 14, which is an LS-type crystallized glass, can have holes (non-through-holes) formed by ablation processing using a CO2 laser. Table 14 shows that the glass substrate sample No. 16, which is an LAS-type crystallized glass, can have holes (non-through-holes) formed by removing the modified areas created by laser irradiation through etching.

[0187] G0 Non-perforated glass substrate G0a First main surface G0b Second main surface G1 Perforated glass substrate G1a First main surface G1b Second main surface G2 Perforated glass substrate G2a First main surface G2b Second main surface Gm Modified area Z Thickness direction 1 Through hole 1a Side surface of through hole 1b Narrowed area 3a Laser beam 4a Laser beam D1 Diameter of through hole on the first main surface D2 Diameter of through hole on the second main surface D3 Diameter of through hole in the narrowed area θ1 Average taper angle of through hole θ3 Average taper angle of non-perforated hole t0 Thickness of non-perforated glass substrate t Thickness of perforated glass substrate t1 Distance between first main surface and narrowed area t2 Distance between second main surface and narrowed area S1 Preparation process S2 Laser modification process S3 Etching process S11 Preparation process S12 Laser removal process

Claims

1. A perforated glass substrate for semiconductor packaging comprising a first main surface, a second main surface which is the opposite surface of the first main surface, and holes formed on at least one of the main surfaces of the first main surface and the second main surface, wherein the holes include non-through holes formed on at least one of the main surfaces of the first main surface and the second main surface, and / or through holes penetrating between the first main surface and the second main surface, and having a fracture toughness value of 0.8 MPa·m ０．５ A perforated glass substrate for semiconductor packaging, characterized by the above features.

2. The perforated glass substrate for semiconductor packaging according to claim 1, wherein the perforated glass substrate is crystallized glass.

3. The porous glass substrate has, as a glass composition, in mol%, SiO ２ 50 to 85%, Al ２ O ３ 444> 0 to 20%, Li ２ O 1 to 35%, P ２ O ５ 0.1 to 15%, ZrO ２ 0.1 to 10%, Na ２ O 0 to 12%, and is a crystallized glass containing Li ２ O—SiO ２ system crystals. The porous glass substrate for a semiconductor package according to claim 2.

4. The perforated glass substrate has a glass composition of SiO2 in mol%. ２ 65-75%, Al ２ O ３ 10-20%, Li ２ O 0.1-10%, BaO 0-5%, MgO 0-5%, CaO 0-3%, TiO ２ 0-4%, ZrO ２ 0-5%, P ２ O ５ 0-5%, Na ２ O 0-3%, K ２ It contains 0-2% of O and Li ２ O-Al ２ O ３ -SiO ２ A perforated glass substrate for semiconductor packaging according to claim 2, which is a crystallized glass containing a system of crystals.

5. The perforated glass substrate has a glass composition of SiO in mol%. ２ 30-90%, Al ２ O ３ It contains over 0% to 50% MgO and over 40% MgO-Al ２ O ３ -SiO ２ A perforated glass substrate for semiconductor packaging according to claim 2, which is a crystallized glass containing a system of crystals.

6. The average coefficient of thermal expansion in the temperature range of 30 to 380°C is -10 × 10⁻¹⁰. －７ / ℃ or higher 150 x 10 －７ A perforated glass substrate for semiconductor packaging according to any one of claims 1 to 5, wherein the temperature is below / ℃.

7. The perforated glass substrate is used for semiconductor packaging substrates, as described in any one of claims 1 to 5.

8. A glass substrate comprising a first main surface and a second main surface which is the opposite surface of the first main surface, wherein the fracture toughness value is 0.8 MPa·m ０．５ The above describes a glass substrate for semiconductor packaging, characterized in that it is used for semiconductor packaging substrate applications.

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