Solar cell and method for manufacturing same

Abstract

Provided are a method for manufacturing a solar cell and a solar cell manufactured thereby, the method comprising the steps of: forming, on a substrate having a plurality of through holes, a buffer layer having first openings in regions corresponding to the plurality of through holes; forming, on the buffer layer, an undoped group III-V compound layer having second openings in regions corresponding to the plurality of through holes; filling the insides of the plurality of through holes, the first openings, and the second openings with a first electrode; and forming a first doped group III-V compound layer on the first electrode and the undoped group III-V compound layer.

Description

Solar cell and method of manufacturing the same

[0001] The present invention relates to a solar cell and a method for manufacturing the same.

[0002] Conventional group 3-5 solar cells have been manufactured using GaAs or sapphire substrates. However, this has the disadvantage that group 3-5 compounds must be deposited in a high-temperature process, which leads to increased manufacturing costs.

[0003] The present invention is designed to solve the aforementioned conventional problems, and aims to provide a solar cell and a method for manufacturing the same that can deposit group 3-5 compounds at low temperatures and thereby reduce manufacturing costs.

[0004] To achieve the above objective, the present invention provides a method for manufacturing a solar cell comprising: a step of forming a buffer layer containing nitrogen on a substrate; and a step of forming a first compound layer comprising one or two of a group 3 element and a group 5 element on the buffer layer, wherein the first compound layer has a crystal structure.

[0005] The present invention also provides a method for manufacturing a solar cell comprising the steps of: preparing a substrate having a plurality of through holes formed therein; forming a buffer layer containing nitrogen on the upper surface of the substrate; forming a first compound layer comprising one or both of a group 3 element and a group 5 element on the buffer layer; and forming a first electrode inside the plurality of through holes or on the lower surface of the substrate.

[0006] The above buffer layer may include one or more of SiN, SiON, AlN, TiN, MoN, and CoN.

[0007] The first compound layer may include one or more of GaN, GaO, GaON, InGaN, AlGaN, InAlGaN, GaAs, GaP, SeGe, InP, InSb, InAs, AlAs, AlGaAs, GaInP, GaAsP, AlInP, and AlInAs.

[0008] The above substrate may be any one of a glass substrate, a square substrate, a circular substrate, and a silicon substrate.

[0009] The first electrode may be formed inside the plurality of through holes and on the lower surface of the substrate.

[0010] The present invention also provides a method for manufacturing a solar cell comprising the steps of: forming a buffer layer having a first opening in an area corresponding to the plurality of through holes on a substrate having a plurality of through holes; forming an undoped group 3-5 compound layer having a second opening in an area corresponding to the plurality of through holes on the buffer layer; filling a first electrode within the plurality of through holes, the first opening, and the second opening; and forming a first doped group 3-5 compound layer on the first electrode and the undoped group 3-5 compound layer.

[0011] At least one of the above buffer layer and the above undoped group 3-5 compound layer may be additionally formed within a plurality of through holes of the substrate.

[0012] The above undoped group 3-5 compound layer and the above first doped group 3-5 compound layer may be crystalline.

[0013] The upper surface of the first electrode coincides with the upper surface of the undoped group 3-5 compound layer, and the lower surface of the first electrode may extend further downward than the lower surface of the substrate.

[0014] The method may further include the steps of: forming an MQW (Multi Quantum Wells) structural layer on the first doped group 3-5 compound layer; forming a second doped group 3-5 compound layer having opposite polarity to the first doped group 3-5 compound layer on the MQW (Multi Quantum Wells) structural layer; and forming a second electrode on the second doped group 3-5 compound layer.

[0015] The step of forming the above-mentioned undoped 3-5 compound layer may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element into the chamber, and a process of injecting plasma gas into the chamber to form a plasma.

[0016] The step of forming the first doped 3-5 compound layer may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element into the chamber, a process of injecting a first dopant-containing gas into the chamber, and a process of injecting a plasma gas into the chamber to form a plasma.

[0017] The process of spraying the first dopant-containing gas can be performed simultaneously with at least one of the processes of spraying one or more gases containing the group 3 element, spraying one or more gases containing the group 5 element, and spraying the plasma gas.

[0018] The above plasma gas may include at least one gas selected from the group consisting of H2, Ar, N2, O2, O3, and Ge.

[0019] One or more gases containing the group 3 elements are injected through a plurality of first injection holes of a first gas injection unit, and one or more gases containing the group 5 elements are injected through a plurality of second injection holes of a second gas injection unit, and one or more gases containing the group 3 elements are supplied to the plurality of first injection holes through a first gas flow path, and one or more gases containing the group 5 elements are supplied to the plurality of second injection holes through a second gas flow path, and the first gas flow path and the second gas flow path may be provided independently of each other.

[0020] It further includes a plurality of third injection holes communicating with the plurality of first injection holes or the plurality of second injection holes, and one or more gases containing the group 3 element may be injected through the first injection hole and the third injection hole, or one or more gases containing the group 5 element may be injected through the second injection hole and the third injection hole.

[0021] The present invention also provides a solar cell comprising: a substrate having a plurality of through holes; a buffer layer provided on the substrate and having a first opening in an area corresponding to the plurality of through holes; an undoped group 3-5 compound layer provided on the buffer layer and having a second opening in an area corresponding to the plurality of through holes; a first electrode filled within the plurality of through holes, the first opening, and the second opening; a first doped group 3-5 compound layer provided on the first electrode and the undoped group 3-5 compound layer; an MQW (Multi Quantum Wells) structure layer provided on the first doped group 3-5 compound layer; a second doped group 3-5 compound layer provided on the MQW (Multi Quantum Wells) structure layer and having opposite polarity to the first doped group 3-5 compound layer; and a second electrode provided on the second doped group 3-5 compound layer.

[0022] At least one of the above buffer layer and the above undoped group 3-5 compound layer may be additionally formed within a plurality of through holes of the substrate.

[0023] The above undoped group 3-5 compound layer, the above first doped group 3-5 compound layer, and the above second doped group 3-5 compound layer may be crystalline.

[0024] The upper surface of the first electrode coincides with the upper surface of the undoped group 3-5 compound layer, and the lower surface of the first electrode may extend further downward than the lower surface of the substrate.

[0025] According to the present invention as described above, a glass substrate or a silicon substrate can be used, allowing group 3-5 compounds to be deposited at a low temperature, and accordingly, manufacturing costs can be reduced.

[0026] According to the present invention, a plurality of through holes are formed in a substrate, and a first electrode is filled into the plurality of through holes, thereby allowing a plurality of thin films to be stacked on one surface of the substrate to manufacture a group 3-5 solar cell.

[0027] FIGS. 1a to 1h are process cross-sectional views showing a method for manufacturing a solar cell according to one embodiment of the present invention.

[0028] FIG. 2 is a schematic diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0029] FIG. 3 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0030] FIG. 4 is a schematic perspective view of a substrate support provided in a substrate processing device according to another embodiment of the present invention.

[0031] FIG. 5 is a schematic side cross-sectional view of a gas injection unit provided in a substrate processing device according to another embodiment of the present invention.

[0032] FIG. 6 is a schematic bottom view of a gas injection unit provided in a substrate processing device according to another embodiment of the present invention.

[0033] FIG. 7 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0034] FIG. 8 is a diagram showing the arrangement structure of openings in a substrate processing device according to another embodiment of the present invention.

[0035] FIG. 9 is a drawing showing the formation of a supply port and an opening in a substrate processing device according to another embodiment of the present invention.

[0036] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0037] Shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the depicted details. Throughout the specification, the same reference numerals refer to the same components. Furthermore, in describing the present invention, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the present invention, such detailed description is omitted. Where terms such as "includes," "has," or "is made up" are used in this specification, other parts may be added unless "only" is used. Where a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise.

[0038] In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement.

[0039] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described using expressions such as 'on,' 'upper,' 'lower,' or 'next to,' one or more other parts may be located between the two parts unless 'immediately' or 'directly' is used.

[0040] In the case of an explanation of a temporal relationship, for example, when a temporal sequence is explained using 'after', 'following', 'next', 'before', etc., it may include cases where the sequence is not continuous unless 'immediately' or 'directly' is used.

[0041] Although terms such as "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of the present invention.

[0042] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0043] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0044] FIGS. 1a to 1h are process cross-sectional views showing a method for manufacturing a solar cell according to one embodiment of the present invention.

[0045] First, as can be seen in FIG. 1a, a substrate (100) is prepared.

[0046] The above substrate (100) may be made of a glass substrate. The above substrate (100) may be made of a silicon substrate. The above substrate (100) may be made of a square substrate or a circular substrate.

[0047] The above substrate (100) is provided with a plurality of through holes (110). Although the drawing shows two through holes (110) provided on one side and the other side of the substrate (100), the formation location and number of through holes (110) can be varied.

[0048] Next, as can be seen in FIG. 1b, a buffer layer (200) is formed on the upper surface of the substrate (100) having the plurality of through holes (110).

[0049] The buffer layer (200) has a first opening (210) in an area corresponding to the through hole (110) of the substrate (100).

[0050] The process of forming the buffer layer (200) can be performed within a chamber. That is, the substrate (100) can be loaded into the chamber, and the buffer layer (200) can be deposited on the upper surface of the substrate (100) within the chamber.

[0051] The buffer layer (200) may contain nitrogen. The buffer layer (200) may include one or more of SiN, SiON, AlN, TiN, MoN, and CoN. The buffer layer (200) may be composed of, for example, an amorphous silicon nitride layer.

[0052] Although not specifically illustrated, a portion of the buffer layer (200) may also be formed inside the through hole (110) provided in the substrate (100). That is, the buffer layer (200) may be additionally formed on the entire surface or a portion of the inner surface of the through hole (110) provided in the substrate (100).

[0053] The deposition of the above buffer layer (200) can be performed using Atomic Layer Deposition (ALD).

[0054] Next, as can be seen in FIG. 1c, an undoped group 3-5 compound layer (300) is formed on the upper surface of the buffer layer (200).

[0055] The above undoped group 3-5 compound layer (300) has a second opening (310) in an area corresponding to the through hole (110) of the substrate (100) and the first opening (210) of the buffer layer (200).

[0056] The process of forming the above undoped group 3-5 compound layer (300) can be performed in a chamber.

[0057] Although not specifically illustrated, a portion of the undoped 3-5 group compound layer (300) may also be formed inside the first opening (210) of the buffer layer (200) and inside the through hole (110) provided in the substrate (100). That is, the undoped 3-5 group compound layer (300) may be additionally formed on the entire surface or a portion of the inner surface of at least one of the first opening (210) of the buffer layer (200) and inside the through hole (110) provided in the substrate (100). When a portion of the buffer layer (200) is formed inside the through hole (110) provided in the substrate (100), the undoped 3-5 group compound layer (300) may be formed on the portion of the buffer layer (200) formed inside the through hole (110).

[0058] The deposition of the above undoped group 3-5 compound layer (300) can be performed using atomic layer deposition (ALD). The above undoped group 3-5 compound layer (300) may be crystalline.

[0059] The deposition process of the above-mentioned undoped 3-5 group compound layer (300) may include a process of injecting one or more gases containing a group 3 element into a chamber and a process of injecting one or more gases containing a group 5 element.

[0060] Alternatively, the deposition process of the undoped 3-5 group compound layer (300) may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element, and a process of injecting a plasma gas to form a plasma. If the process of forming the plasma is included, the crystallinity of the undoped 3-5 group compound layer (300) may be improved. The plasma gas may comprise at least one gas selected from the group consisting of H2, Ar, N2, O2, O3, and Ge.

[0061] In particular, according to one embodiment of the present invention, when a layer containing nitrogen, such as an amorphous silicon nitride layer, is used as the buffer layer (200), the crystallinity of the undoped group 3-5 compound layer (300) can be improved.

[0062] Examples of the above Group 3-5 compounds may include one or more of GaN, GaO, GaON, InGaN, AlGaN, InAlGaN, GaAs, GaP, SeGe, InP, InSb, InAs, AlAs, AlGaAs, GaInP, GaAsP, AlInP, and AlInAs, but are not necessarily limited thereto.

[0063] Next, as can be seen in FIG. 1d, a first electrode (400) is filled into the through hole (110) provided in the substrate (100), the first opening (210) of the buffer layer (200), and the second opening (310) of the undoped group 3-5 compound layer (300).

[0064] When at least one of the portion of the buffer layer (200) and the portion of the undoped group 3-5 compound layer (300) is formed inside a through hole (110) provided in the substrate (100), the first electrode (400) may be formed on at least one of the portion of the buffer layer (200) and the portion of the undoped group 3-5 compound layer (300) formed inside the through hole (110).

[0065] When a portion of the undoped group 3-5 compound layer (300) is formed inside the first opening (210) of the buffer layer (200), the first electrode (400) may be formed on the portion of the undoped group 3-5 compound layer (300) formed inside the first opening (210).

[0066] The filling process of the first electrode (400) can be performed outside the chamber.

[0067] The first electrode (400) may be formed through a printing process using a paste of at least one metal material selected from the group consisting of copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), tin (Sn), lead (Pb), bismuth (Bi), and silver (Ag), but is not necessarily limited thereto.

[0068] The upper surface of the first electrode (400) may coincide with the upper surface of the undoped group 3-5 compound layer (300). The lower surface of the first electrode (400) may not coincide with the lower surface of the substrate (100) and may extend further downward than the lower surface of the substrate (100).

[0069] Although not illustrated, the first electrode (400) may be additionally formed on the lower surface of the substrate (100).

[0070] Next, as can be seen in FIG. 1e, a first doped group 3-5 compound layer (500) is formed on the upper surface of the first electrode (400) and the undoped group 3-5 compound layer (300).

[0071] The first doped group 3-5 compound layer (500) has either N-type or P-type polarity. The process of forming the first doped group 3-5 compound layer (500) can be performed in a chamber.

[0072] The deposition of the first doped group 3-5 compound layer (500) can be performed using atomic layer deposition (ALD). The first doped group 3-5 compound layer (500) may be crystalline.

[0073] The deposition process of the first doped 3-5 group compound layer (500) may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element, and a process of injecting a first dopant-containing gas.

[0074] Alternatively, the deposition process of the first doped 3-5 group compound layer (500) may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element, a process of injecting a first dopant-containing gas, and a process of injecting a plasma gas to form a plasma. If the process of forming the plasma is included, the crystallinity of the first doped 3-5 group compound layer (500) may be improved. The plasma gas may comprise at least one gas selected from the group consisting of H2, Ar, N2, O2, O3, and Ge.

[0075] The process of spraying the first dopant-containing gas can be performed simultaneously with at least one of the processes of spraying one or more gases containing the group 3 element, spraying one or more gases containing the group 5 element, and spraying the plasma gas.

[0076] According to one embodiment of the present invention, by forming the first doped group 3-5 compound layer (500) on the upper surface of the undoped group 3-5 compound layer (300), the crystallinity of the first doped group 3-5 compound layer (500) can be improved by the undoped group 3-5 compound layer (300).

[0077] Next, as can be seen in FIG. 1f, an MQW (Multi Quantum Wells) structural layer (600) is formed on the upper surface of the first doped group 3-5 compound layer (500).

[0078] The process of forming the above MQW structural layer (600) can be performed in a chamber.

[0079] The above MQW structure layer (600) may be composed of a repeating stacked structure of active layer / barrier layer such as InGaN / GaN, AlN / AlGaN, or InAlAs / InGaAs, but is not necessarily limited thereto.

[0080] The deposition of the above MQW structural layer (600) can be performed using Atomic Layer Deposition (ALD).

[0081] Next, as can be seen in Fig. 1g, a second doped group 3-5 compound layer (700) is formed on the upper surface of the MQW (Multi Quantum Wells) structure layer (600).

[0082] The second doped group 3-5 compound layer (700) has a polarity of either N-type or P-type. The polarity of the second doped group 3-5 compound layer (700) is opposite to the polarity of the first doped group 3-5 compound layer (500). That is, the second doped group 3-5 compound layer (700) is doped with a second dopant having a polarity opposite to that of the first dopant doped in the first doped group 3-5 compound layer (500).

[0083] The process of forming the second doped group 3-5 compound layer (700) can be performed in a chamber.

[0084] The deposition of the second doped group 3-5 compound layer (700) can be performed using atomic layer deposition (ALD). The second doped group 3-5 compound layer (700) may be crystalline.

[0085] The deposition process of the second doped 3-5 group compound layer (700) may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element, and a process of injecting a second dopant-containing gas.

[0086] Alternatively, the deposition process of the second doped 3-5 group compound layer (700) may comprise a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element, a process of injecting a second dopant-containing gas, and a process of injecting a plasma gas to form a plasma. If the process of forming the plasma is included, the crystallinity of the second doped 3-5 group compound layer (700) may be improved. The plasma gas may comprise at least one gas selected from the group consisting of H2, Ar, N2, O2, O3, and Ge.

[0087] The process of injecting the second dopant-containing gas can be performed simultaneously with at least one of the processes of injecting one or more gases containing the group 3 element, injecting one or more gases containing the group 5 element, and injecting the plasma gas.

[0088] Next, as can be seen in FIG. 1h, a second electrode (800) is formed on the upper surface of the second doped group 3-5 compound layer (700).

[0089] The process of forming the second electrode (800) can be performed outside the chamber.

[0090] The second electrode (800) may be formed through a printing process using a paste of at least one metal material selected from the group consisting of copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), tin (Sn), lead (Pb), bismuth (Bi), and silver (Ag), but is not necessarily limited thereto.

[0091] FIG. 2 is a schematic diagram of a substrate processing apparatus according to one embodiment of the present invention.

[0092] Referring to FIG. 2, a substrate processing apparatus according to the first embodiment may include a chamber (2). A processing process for a substrate (100) may be performed inside the chamber (2). The chamber (2) may include an upper dome (2a) and a lower dome (2b).

[0093] The upper dome (2a) may be positioned above the lower dome (2b). The upper dome (2a) may block the upper side of the processing space (PS). The processing space (PS) may be a space located inside the chamber (2). A processing process for the substrate (100) may be performed in the processing space (PS). The upper dome (2a) may be formed of quartz. The upper dome (2a) may be formed in the shape of a dome with the lower side open overall.

[0094] The lower dome (2b) may be positioned below the upper dome (2a). The lower dome (2b) may block the lower side of the processing space (PS). The lower dome (2b) may be formed of quartz. The lower dome (2b) may be formed with an open upper side. The lower dome (2b) may be provided with an exhaust section (221) for exhausting gas, impurities, etc. from the processing space (PS). The exhaust section (221) may include a turbo molecular pump (TMP) (222). The chamber (2) including the turbo molecular pump (222) may be controlled to a high vacuum pressure of 10 mTorr or more and 50 mTorr or less.

[0095] The chamber (2) may include a heating unit (23). The heating unit (23) may heat the substrate (100) located inside the chamber (2). The heating unit (23) may also heat the substrate (100) by heating the processing space (PS). The heating unit (23) may include a plurality of lamp heaters. The lamp heaters may heat the substrate (100) by emitting heating light toward the processing space (PS). The heating unit (23) may be positioned on the outside of the lower dome (2b). The heating unit (23) may also be positioned on the outside of the upper dome (2a).

[0096] The chamber (2) may include a chamber body (2c). The chamber body (2c) may be positioned between the upper dome (2a) and the lower dome (2b). The upper dome (2a) and the lower dome (2b) may each be coupled to the chamber body (2c).

[0097] A substrate support member (3) may be installed in the chamber (2). The substrate support member (3) may support one or more substrates (100). A processing process for the substrate (100) may be performed while the substrate (100) is supported by the substrate support member (3) and positioned in the processing space (PS). A driving unit (30a) may be coupled to the substrate support member (3). The driving unit (30a) may raise and lower the substrate support member (3). The driving unit (30a) may also rotate the substrate support member (3).

[0098] A gas injection unit (4) may be installed in the chamber (2). The gas injection unit (4) may inject gas. A processing process for the substrate (100) may be performed using the gas injected by the gas injection unit (4). The gas injection unit (4) may inject gas into the processing space (PS). The gas injection unit (4) may inject gas toward the substrate support (3).

[0099] The above gas injection unit (4) may include a first gas injection unit (41) and a second gas injection unit (42). The first gas injection unit (41) may inject a first gas. The second gas injection unit (42) may inject a second gas. The first gas and the second gas may be different types of gases.

[0100] The first gas injection unit (41) and the second gas injection unit (42) may inject gas toward different parts of the substrate support (3). The first gas injection unit (41) may include a first gas flow path for injecting the first gas. The second gas injection unit (42) may include a second gas flow path for injecting the second gas. In this case, a gas injection unit (4) having the first gas flow path and the second gas flow path may be provided on the upper part of the chamber (2). The first gas flow path and the second gas flow path may be spatially separated so that the first gas and the second gas are not mixed until they are injected into the processing space (PS).

[0101] The first gas and the second gas may be sequentially injected through a first gas channel and a second gas channel separated from each other to deposit a thin film by an Atomic Layer Deposition (ALD) process, or simultaneously injected through a first gas channel and a second gas channel separated from each other to deposit a thin film by a Chemical Vapor Deposition (CVD) process. At this time, the first gas may include at least one gas among a source gas, a plasma gas, and a reaction gas, and the second gas may include at least one other gas among a source gas, a plasma gas, and a reaction gas. For example, the first gas may include at least one gas among a gas containing a group 3 element, a gas containing a group 5 element, a gas containing a first dopant, a gas containing a second dopant, and a plasma gas, and the second gas may include at least one other gas among a gas containing a group 3 element, a gas containing a group 5 element, a gas containing a first dopant, a gas containing a second dopant, and a plasma gas.

[0102] The first gas injection unit (41) may be connected to the first supply unit (51). The first supply unit (51) may store the first gas and supply the first gas to the first gas injection unit (41). The first gas injection unit (41) may be connected to the first pile-up tank (52). The first pile-up tank (52) may fill the first gas and temporarily inject the first gas into the processing space (PS) through the first gas injection unit (41). The first pile-up tank (52) may be connected to the first supply unit (51) and the first gas injection unit (41) respectively, between the first supply unit (51) and the first gas injection unit (41). The first supply unit (51) may supply a purge gas for purging the processing space (PS), a source gas, a reaction gas, or a plasma gas to the processing space (PS) to the first gas injection unit (41).

[0103] The second gas injection unit (42) may be connected to the second supply unit (53). The second supply unit (53) may store the second gas and supply the second gas to the second gas injection unit (42). The second gas injection unit (42) may be connected to the second pile-up tank (54). The second pile-up tank (54) may fill the second gas and temporarily inject the second gas into the processing space (PS) through the second gas injection unit (42). The second pile-up tank (54) may be connected to the second supply unit (53) and the second gas injection unit (42) respectively, between the second supply unit (53) and the second gas injection unit (42). The second supply unit (53) may supply a purge gas for purging the processing space (PS), a source gas, a reaction gas, or a plasma gas to the processing space (PS) to the second gas injection unit (42).

[0104] An antenna (40) may be installed in the chamber (2). The antenna (40) may be used to form plasma in the processing space (PS). The antenna (40) may include a coil that induces an electric field inside the chamber (2) for plasma formation. The antenna (40) may be positioned outside the upper dome (2a). The antenna (40) may be coupled to the upper surface of the upper dome (2a).

[0105] The antenna (40) can be connected to a power supply unit (400). The power supply unit (400) can apply RF (Radio Frequency) power to the antenna (40). Accordingly, the antenna (40) can form plasma inside the chamber (2). In this case, the gas injection unit (4) may inject plasma gas into the processing space (PS).

[0106] FIG. 3 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention.

[0107] As can be seen in FIG. 3, a substrate processing device according to another embodiment of the present invention comprises a chamber (2), a substrate support (3), a gas injection unit (4), a gas storage unit (5), and a power supply unit (6).

[0108] The above chamber (2) provides a processing space (PS) for a substrate processing process.

[0109] The chamber (2) may be coupled with an exhaust port (not shown) for exhausting residual process gas from the processing space (PS). Additionally, a heater (not shown) capable of controlling the temperature inside the chamber (2) may be additionally installed within the chamber (2), for example, on the substrate support (3).

[0110] The above substrate support (3) can be coupled to the chamber (2) inside the chamber (2).

[0111] The substrate support member (3) supports the substrate (10). The substrate support member (3) can support one or more substrates (10), and accordingly, a thin film can be formed on multiple substrates (10) at once.

[0112] The gas injection unit (4) is positioned inside the chamber (2) facing the substrate support (3) and injects gas toward the substrate support (3). For example, the gas injection unit (4) may be positioned above the substrate support (3) to inject process gas downward toward the substrate support (3). The processing space (PS) is provided between the gas injection unit (4) and the substrate support (3). Throughout this specification, gas supply includes gas injection.

[0113] The above gas injection unit (4) can be coupled to a chamber lid (not shown). The chamber lid can be coupled to the chamber (2) to cover the upper part of the chamber (2).

[0114] The above gas injection unit (4) can be connected to the above gas storage unit (5). Accordingly, the above gas injection unit (4) can receive process gas from the above gas storage unit (5) and inject the supplied process gas toward the substrate support unit (3).

[0115] The above gas injection unit (4) can be connected to a power supply unit (6). Accordingly, plasma can be generated inside the chamber (2) using plasma power supplied from the power supply unit (6).

[0116] The above gas injection unit (4) may include a first gas injection unit (4a) and a second gas injection unit (4b).

[0117] The first gas injection unit (4a) is intended to inject a first gas. One side of the first gas injection unit (4a) is connected to the gas storage unit (5) through a pipe or hose, and the other side of the first gas injection unit (4a) may be connected to the processing space (PS). Accordingly, the first gas supplied from the gas storage unit (5) can be injected into the processing space (PS) after traveling along the first gas flow path of the first gas injection unit (4a).

[0118] The first gas injection unit (4a) above functions as a passage for the first gas to flow and can also function as an injection port for injecting the first gas into the processing space (PS).

[0119] The second gas injection unit (4b) above is for injecting a second gas. The second gas and the first gas may be different gases.

[0120] One side of the second gas injection unit (4b) is connected to the gas storage unit (5) through a pipe or hose, and the other side of the second gas injection unit (4b) can be connected to the processing space (PS). Accordingly, the second gas supplied from the gas storage unit (5) can be injected into the processing space (PS) after moving along the second gas flow path of the second gas injection unit (4b).

[0121] The second gas injection unit (4b) above functions as a passage for the second gas to flow and can also function as an injection port for injecting the second gas into the processing space (PS).

[0122] The first gas flow path of the first gas injection unit (4a) and the second gas flow path of the second gas injection unit (4b) may be arranged to be spatially separated from each other. Accordingly, the first gas supplied from the gas storage unit (5) to the first gas injection unit (4a) may be injected into the processing space (PS) without passing through the second gas flow path of the second gas injection unit (4b). Similarly, the second gas supplied from the gas storage unit (5) to the second gas injection unit (4b) may be injected into the processing space (PS) without passing through the first gas flow path of the first gas injection unit (4a).

[0123] Thus, according to one embodiment of the present invention, since the first gas flow path of the first gas injection unit (4a) and the second gas flow path of the second gas injection unit (4b) are arranged to be spatially separated from each other, the first gas and the second gas cannot be mixed with each other within the first gas injection unit (4a) and the second gas injection unit (4b).

[0124] The first gas injection unit (4a) and the second gas injection unit (4b) can inject gas toward different areas in the processing space (PS).

[0125] The above gas storage unit (5) stores process gas and supplies the stored process gas to the above gas injection unit (4). Although one gas storage unit (5) is shown in the drawing, multiple gas storage units (5) may be provided.

[0126] Meanwhile, although not shown in the drawings, a third gas flow path of a third gas injection unit is additionally provided, which is arranged to be spatially separated from the first gas flow path of the first gas injection unit (4a) and the second gas flow path of the second gas injection unit (4b), so that a third gas can be injected from the third gas injection unit into the processing space (PS).

[0127] The above power supply unit (6) can apply plasma power to the above gas injection unit (4). For example, the plasma power may be RF power.

[0128] FIG. 4 is a schematic perspective view of a substrate support provided in a substrate processing device according to another embodiment of the present invention.

[0129] As can be seen in FIG. 4, the substrate support member (3) may include a support surface (31) that supports a plurality of substrates (10). The support surface (31) may be a surface facing the gas injection member (reference numeral 4 in FIG. 3).

[0130] During the substrate processing process, the substrate support (3) can be rotated around the central axis (30).

[0131] The above substrate support (3) may include a central region (32) and an outer region (33) disposed outside the central region (32).

[0132] When the central region (32) is formed in a circular shape, the outer region (33) may be formed in a circular ring shape surrounding the central region (32).

[0133] The plurality of substrates (10) may be spaced apart from each other along the outer region (33). At this time, the plurality of substrates (10) may be spaced apart from each other at the same angle with respect to the central axis (30) of the substrate support (3) in the outer region (33).

[0134] The plurality of substrates (10) may be disposed in the outer region (33) and may not be disposed in the central region (32), but are not necessarily limited thereto, and at least one substrate (10) may be disposed in the central region (32).

[0135] FIG. 5 is a schematic side cross-sectional view of a gas injection unit provided in a substrate processing device according to another embodiment of the present invention.

[0136] As can be seen in FIG. 5, the gas injection unit (4) may include a first electrode (43) and a second electrode (44).

[0137] The first electrode (43) and the second electrode (44) may be arranged in an up-and-down direction. The first electrode (43) is located above the second electrode (44), and thus, the first electrode (43) may be an upper electrode and the second electrode (44) may be a lower electrode. Additionally, the first electrode (43) may be grounded and function as a ground electrode.

[0138] The first electrode (43) may include a first gas injection unit (4a) and a second gas injection unit (4b). Accordingly, the first electrode (43) may inject a first gas through the first gas injection unit (4a) and inject a second gas through the second gas injection unit (4b). The first gas injection unit (4a) and the second gas injection unit (4b) may be arranged so as to be spatially separated from each other within the first electrode (43).

[0139] The first gas injection unit (4a) may include a first connecting hole (41a) connected to the gas storage unit (reference numeral 5 in FIG. 3) and a plurality of first injection holes (42a) connected to the first connecting hole (41a). The first connecting hole (41a) and the first injection holes (42a) may be formed inside the first electrode (43). One side of the first injection hole (42a) may be connected to the first connecting hole (41a), and the other side of the first injection hole (42a) may be connected to the processing space (PS). Accordingly, the first gas supplied from the gas storage unit (reference numeral 5 in FIG. 3) may travel along the first connecting hole (41a) and then be injected into the processing space (PS) through the first injection holes (42a). The path of the first gas from the above gas storage unit (reference numeral 5 of FIG. 3) to the plurality of first injection holes (42a) can be the first gas flow path.

[0140] The second gas injection unit (4b) may include a second connecting hole (41b) connected to the gas storage unit (reference numeral 5 in FIG. 3) and a plurality of second injection holes (42b) connected to the second connecting hole (41b). The second connecting hole (41b) and the second injection holes (42b) may be formed inside the first electrode (43). One side of the second injection holes (42b) may be connected to the second connecting hole (41b), and the other side of the second injection holes (42b) may be connected to the processing space (PS). Accordingly, the second gas supplied from the gas storage unit (reference numeral 5 in FIG. 3) may travel along the second connecting hole (41b) and then be injected into the processing space (PS) through the second injection holes (42b). The path of the second gas from the above gas storage unit (reference numeral 5 of FIG. 3) to the plurality of second injection holes (42b) can be the second gas flow path.

[0141] The second connecting hole (41b) and the second injection hole (42b) are separated from the first connecting hole (41a) and the first injection hole (42a). Accordingly, the first gas path is provided independently of the second gas path.

[0142] The first electrode (43) may include a base member (43a) extended in a horizontal direction and a protruding member (43b) extended downward from the lower surface of the base member (43a).

[0143] The protruding member (43b) may extend from the lower surface of the base member (43a) into the processing space (PS). Multiple such protruding members (43b) may be provided, and multiple protruding members (43b) may be spaced apart from each other.

[0144] Each of the first connecting hole (41a), the second connecting hole (41b), and the second injection hole (42b) can be provided in the base member (43a).

[0145] At this time, the first connecting hole (41a) and the second connecting hole (41b) may be extended in the extension direction of the base member (43a), specifically, in the horizontal direction. The first connecting hole (41a) and the second connecting hole (41b) are separated from each other. The second injection hole (42b) may be extended in the vertical direction from the second connecting hole (41b).

[0146] The first injection hole (42a) may be provided to extend from the base member (43a) to the protruding member (43b). The first injection hole (42a) may be provided by penetrating the interior of the protruding member (43b) in the vertical direction.

[0147] The second electrode (44) may be provided with a hole (44a) into which the protruding member (43b) can be inserted. The hole (44a) may be formed by penetrating the second electrode (44) in an upward and downward direction. The hole (44a) may function as a passageway for passing gas discharged from the first electrode (43). The holes (44a) may correspond one-to-one with the same number as the protruding member (43b). Accordingly, the plurality of protruding members (43b) may be inserted one-to-one into the plurality of holes (44a). To this end, the diameter of the hole (44a) is formed to be larger than the diameter of the protruding member (43b).

[0148] When the protruding member (43b) of the first electrode (43) is inserted into the hole (44a) of the second electrode (44), the height of the lower surface of the protruding member (43b) and the height of the lower surface of the second electrode (44) may be the same.

[0149] The lower surface of the base member (43a) of the first electrode (43) and the upper surface of the second electrode (44) are spaced apart from each other, and the spaced-apart space is in communication with the second injection hole (42b).

[0150] Additionally, when the protruding member (43b) of the first electrode (43) is inserted into the hole (44a) of the second electrode (44), the outer surface of the protruding member (43b) is spaced apart from the inner surface of the second electrode (44) surrounding the hole (44a). Accordingly, the hole (44a) region between the outer surface of the protruding member (43b) and the inner surface of the second electrode (44), that is, the hole (44a) region corresponding to the outer space of the protruding member (43b), is in communication with the spaced-out space between the lower surface of the base member (43a) of the first electrode (43) and the upper surface of the second electrode (44).

[0151] In addition, the hole (44a) area corresponding to the outer space of the protruding member (43b) is connected to the processing space (PS).

[0152] Accordingly, the second gas discharged from the second injection hole (42b) can be injected into the processing space (PS) through the gap between the first electrode (43) and the second electrode (44). Specifically, the second gas discharged from the second injection hole (42b) can be injected toward the processing space (PS) by passing through the gap between the lower surface of the base member (43a) of the first electrode (43) and the upper surface of the second electrode (44), and passing through the hole (44a) area corresponding to the outer space of the protruding member (43b). That is, the second gas discharged from the second injection hole (42b) can be injected toward the lower side of the hole (44a) by passing through the gap between the lower surface of the base member (43a) and the upper surface of the second electrode (44) and passing through the hole (44a) provided in the second electrode (44) along the outer space of the protruding member (43b). Accordingly, the portion of the hole (44a) corresponding to the space between the outer side of the protruding member (43b) and the second electrode (44) becomes the third injection hole, so that the second gas can be injected into the processing space (PS) through the third injection hole via the second injection hole (42b).

[0153] Meanwhile, the first gas may be injected into the processing space (PS) through the third injection hole via the second injection hole (42b), and the second gas may be injected into the processing space (PS) through the first injection hole (42a).

[0154] Additionally, an insulating member (not shown) for partially insulating the space between the second electrode (44) and the first electrode (43) may be additionally disposed.

[0155] RF power may be applied to the second electrode (44). As the first electrode (43) is grounded, the RF power may be applied to the second electrode (44) to generate plasma. Plasma may be generated in the space between the first electrode (43) and the second electrode (44). More specifically, plasma may be generated in the space between the lower surface of the base member (43a) of the first electrode (43) and the upper surface of the second electrode (44), and inside the hole (44a) provided in the second electrode (44). Accordingly, the process gas may be activated using the plasma, and the activated process gas may be sprayed into the processing space (PS).

[0156] As described above, plasma can be formed by grounding the first electrode (43) and applying RF power to the second electrode (44), but it is not necessarily limited to this, and plasma can also be formed by applying RF power to the first electrode (43) and grounding the second electrode (44). In addition, plasma can be formed by applying a positive (+) voltage to either the first electrode (43) or the second electrode (44) and connecting a negative (-) electrode to the other electrode.

[0157] Additionally, as described above, since the first electrode (43) is provided with a protruding member (43b), the lower surface of the first electrode (43) is not flat and its height varies depending on the position. However, the first electrode (43) is not limited to this and may not be provided with the protruding member (43b). That is, the first electrode (43) may be provided with only the base member (43a) and may not be provided with a protruding member (43b) extending downward from the base member (43a), in which case the lower surface of the first electrode (43) may have a flat shape.

[0158] When the lower surface of the first electrode (43) and the upper surface of the second electrode (44) are each formed flat, some of the holes (44a) are positioned at a location corresponding to the first gas injection part (4a) so that the first gas injected from the first gas injection part (4a) can pass through, and the remainder of the holes (44a) are positioned at a location corresponding to the second gas injection part (4b) so that the second gas injected from the second gas injection part (4b) can pass through.

[0159] Although not shown, the holes (44a) may be formed in the second electrode (44) in a smaller number compared to the sum of the number of first injection holes (42a) of the first gas injection part (4a) and the number of second injection holes (42b) of the second gas injection part (4b).

[0160] FIG. 6 is a schematic bottom view of a gas injection unit provided in a substrate processing device according to another embodiment of the present invention.

[0161] Referring to FIG. 6, the hole (44a) and the protruding member (43b) are formed over the entire lower surface of the gas injection part (4), and thus, gas can be injected over the entire central area (Fig. 4, reference numeral 32) and outer area (Fig. 4, reference numeral 33) of the substrate support part (Fig. 4, reference numeral 3).

[0162] FIG. 7 is a schematic diagram of a substrate processing apparatus according to another embodiment of the present invention, FIG. 8 is a diagram showing the arrangement structure of openings in a substrate processing apparatus according to another embodiment of the present invention, and FIG. 9 is a diagram showing the appearance of supply ports and openings being formed in a substrate processing apparatus according to another embodiment of the present invention.

[0163] Referring to FIGS. 7 to 9, a substrate processing device according to another embodiment of the present invention comprises a chamber (10), a substrate support member (20) installed inside the chamber (10) to support a substrate (S) provided inside the chamber (10), a gas supply member (300) installed inside the chamber (10) to spray gas onto the substrate support member (20), and a power supply device (400) connected to the gas supply member (300) to supply power to the gas supply member (300) for generating plasma inside the chamber (10). The substrate processing device may further include a control device (not shown) for controlling the power supply device (400).

[0164] The chamber (10) provides a predetermined reaction space and maintains the reaction space in an airtight manner. The chamber (10) may include a body (14) having a predetermined reaction space, comprising a circular or square planar portion and a side wall portion extending upward from the planar portion, and a lid (12) positioned on the body (14) to maintain the reaction space in an airtight manner. However, the chamber (10) is not limited thereto and may be manufactured in various shapes corresponding to the shape of the substrate (S).

[0165] An exhaust port (not shown) is formed in a predetermined lower region of the chamber (10), and an exhaust pipe (not shown) connected to the exhaust port may be provided on the outside of the chamber (10). Additionally, the exhaust pipe may be connected to an exhaust device (not shown). A vacuum pump, such as a turbo molecular pump, may be used as the exhaust device. Accordingly, the inside of the chamber (10) can be vacuum-suctioned to a predetermined reduced pressure atmosphere, for example, to a predetermined pressure of 0.1 mTorr or less, by the exhaust device. The exhaust pipe may be installed not only on the bottom surface of the chamber (10) but also on the side surface of the chamber (10). Furthermore, to reduce the exhaust time, multiple exhaust pipes and corresponding exhaust devices may be additionally installed.

[0166] A substrate (S) provided into the chamber (10) for a substrate processing process can be placed on the substrate support member (20). The substrate support member (20) may be provided, for example, with an electrostatic chuck to support the substrate (S) by adsorbing it by electrostatic force, or it may support the substrate (S) by vacuum adsorption or mechanical force.

[0167] The substrate support member (20) may be provided in a shape corresponding to the shape of the substrate (S), for example, a circular or square shape. The substrate support member (20) may include a substrate support (22) on which the substrate (S) is placed, and an elevator (24) disposed below the substrate support (22) to move the substrate support (22) up and down. Here, the substrate support (22) may be manufactured to be larger than the substrate (S), and the elevator (24) is provided to support at least one area of ​​the substrate support (22), for example, the center, so that when the substrate (S) is placed on the substrate support (22), the substrate support (22) can be moved to be close to the gas injection device (300). A heater (not shown) may be installed inside the substrate support (22). The heater generates heat at a predetermined temperature to heat the substrate support (22) and the substrate (S) mounted on the substrate support (22), thereby allowing a thin film to be uniformly deposited on the substrate (S).

[0168] A gas supply unit may be installed in the lid (12) of the chamber (10). The gas supply unit may be installed to penetrate the lid (12) of the chamber (10) and may include a first gas supply unit (110) and a second gas supply unit (120) to provide a first gas and a second gas, respectively, to the gas supply unit (300). The first gas supply unit (110) and the second gas supply unit (120) may not be configured to provide only one gas each, but may be configured to provide multiple gases simultaneously.

[0169] The gas supply unit (300) is installed inside the chamber (10), for example, on the lower surface of the lid (12), and inside the gas supply unit (300), a first gas path for spraying a first gas onto a substrate and a second gas path for spraying a second gas onto a substrate are formed. The first gas path and the second gas path are provided to be independent and separated from each other so that the first gas and the second gas can be supplied to the substrate separately without mixing within the gas supply unit (300).

[0170] More specifically, the gas supply unit (300) comprises a first plate (310, 320) having a first gas injection hole (312) capable of supplying a first gas and a second gas injection hole (322) capable of supplying a second gas, and a second plate (330) having a plurality of openings (332) that are electrically insulated from the first plate (310, 320), spaced apart from the first plate (310, 320), and arranged staggered with respect to the first gas injection hole (312) and the second gas injection hole (322). Here, the first gas injection hole (312) is connected to a first gas flow path, and the second gas injection hole (322) is connected to a second gas flow path.

[0171] The first plate (310, 320) can operate as a first electrode for generating plasma in a reaction space, and thus, the first plate (310, 320) can be referred to as a first electrode.

[0172] The first plate (310, 320) may include an upper frame (310) and a lower frame (320).

[0173] The upper frame (310) is detachably attached to the lower surface of the lead (12), and at the same time, a portion of its upper surface, for example, the center of its upper surface, may be spaced apart from the lower surface of the lead (12) by a predetermined distance. Accordingly, the first gas provided from the first gas supply unit (110) can be diffused in the space between the upper surface of the upper frame (310) and the lower surface of the lead (12).

[0174] The lower frame (320) is installed at a certain distance from the lower surface of the upper frame (310). Accordingly, the second gas provided from the second gas supply unit (120) can be diffused in the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0175] The upper frame (310) and the lower frame (320) may be connected by a first sealing member (350) that seals their outer surfaces, thereby sealing their internal space. The first sealing member (350) may be formed of an insulating material to electrically insulate the upper frame (310) and the lower frame (320) from each other, or conversely, may be formed of a conductive material to electrically connect the upper frame (310) and the lower frame (320) to each other.

[0176] The first gas flow path may be formed so that the first gas provided from the first gas supply unit (110) diffuses in the space between the lower surface of the lid (12) and the upper frame (310), penetrates the upper frame (310) and the lower frame (320), and is supplied into the chamber (10). At this time, the first gas injection hole (312) may be formed in the first gas flow path, and specifically, it may be formed penetrating the upper frame (310) and the lower frame (320) while being isolated from the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0177] The second gas path may be formed so that the second gas provided from the second gas supply unit (120) diffuses in the space between the lower surface of the upper frame (310) and the upper surface of the lower frame (320), penetrates the lower frame (320), and is supplied into the chamber (10). At this time, the second gas injection hole (322) may be formed in the second gas path, and specifically, it may be formed penetrating the lower frame (320) while communicating with the space between the upper surface of the lower frame (320) and the lower surface of the upper frame (310).

[0178] Accordingly, the first gas path and the second gas path may not be connected to each other, and the first gas and the second gas may be supplied separately from the gas supply device through the first plate (310, 320) to the lower side of the first plate (310, 320).

[0179] The second plate (330) can operate as a second electrode for generating plasma in the reaction space, and thus, the second plate (330) can be referred to as a second electrode.

[0180] The second plate (330) is insulated from the first plate (310, 320) and can be installed spaced apart from the lower side of the first plate (310, 320). That is, the second plate (330) is insulated from the lower frame (320) and can be installed spaced apart from the lower side of the lower frame (320).

[0181] The second plate (330) is installed at a certain distance (D1) from the lower surface of the lower frame (320). Accordingly, the first gas and the second gas supplied downward through the first plate (310, 320) can diffuse in the space between the upper surface of the second plate (330) and the lower surface of the lower frame (320). The lower frame (320) and the second plate (330) may be structured such that their outer surfaces are sealed by a second sealing member (360). At this time, the second sealing member (360) may be formed of an insulating material to electrically insulate the lower frame (320) and the second plate (330) from each other.

[0182] At this time, the second plate (330) may be installed spaced apart from the lower side of the lower frame (320) by a distance such that the plasma sheath region formed on the lower surface of the lower frame (320) and the plasma sheath region formed on the upper surface of the second plate (330) can overlap. Here, the plasma sheath region refers to a dark field region where positive (+) ions are densely concentrated between the plasma and the surface of the structure, and although there is energy exchange, almost no plasma is formed.

[0183] If the plasma sheath area that can be formed on the lower surface of the lower frame (320) and the plasma sheath area that can be formed on the upper surface of the second plate (330) do not overlap, plasma may be formed between the plasma sheath areas. However, in another embodiment of the present invention, the lower frame (320) and the second plate (330) are spaced apart by a distance such that the plasma sheath area that can be formed on the lower surface of the lower frame (320) and the plasma sheath area that can be formed on the upper surface of the second plate (330) overlap, thereby preventing plasma from being generated between the lower surface of the lower frame (320) and the upper surface of the second plate (330).

[0184] Meanwhile, since the first gas and the second gas supplied downward through the first plate (310, 320) need to diffuse in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), the lower surface of the lower frame (320) and the upper surface of the second plate (330) must be spaced apart at a distance that allows the gas to flow smoothly. Accordingly, the second plate (330) may be spaced apart from the lower frame (320) by a distance of 3 mm or less, for example, 1 to 3 mm. If the second plate (330) is spaced apart from the lower frame (320) by a distance of less than 1 mm, gas cannot flow smoothly in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), and if it is spaced apart by a distance exceeding 3 mm, plasma is generated in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), causing particles, which leads to process defects.

[0185] Additionally, the second plate (330) has a plurality of openings (332) arranged staggered with respect to the first gas injection hole (312) and the second gas injection hole (322). That is, as shown in FIG. 8, the second plate (330) has a plurality of openings (332) formed in a plan view that do not overlap with either the first gas injection hole (312) or the second gas injection hole (322). Such a plurality of openings (332) can be formed to be arranged between the first gas injection hole (312) and the second gas injection hole (322) respectively in a plan view. Additionally, the plurality of openings (332) can be formed to be arranged at a central position between the first gas injection hole (312) and the second gas injection hole (322).

[0186] If at least some of the plurality of openings (332) are arranged to overlap with the first gas injection hole (312) or the second gas injection hole (322), most of the gas supplied from the first gas injection hole (312) or the second gas injection hole (322) will pass through the opening (332) that overlaps with the first gas injection hole (312) or the second gas injection hole (322) and be injected, respectively. However, some gas may not be injected into the opening (332) and may flow into the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330), and may stagnate in the space. Such stagnant gas may obstruct the smooth flow of gas and cause particle formation. Therefore, in the present invention, a plurality of openings (332) may be formed in the second plate (330) such that they are arranged alternately with the first gas injection hole (312) and the second gas injection hole (322), respectively.

[0187] As shown in FIG. 9, the above opening (332) may include a first opening (333) formed close to the lower frame (320) of the first plate and a second opening (335) connected to the first opening (333) and having a larger diameter than the first opening (333).

[0188] The above opening (332) may include a first opening (333) having a predetermined length (H1) and a predetermined diameter (D2) from the upper surface of the second plate (330), and a second opening (335) having a predetermined length (H2) and a predetermined diameter (D3) from the lower surface of the second plate (330). At this time, the first opening (333) serves as a gas inlet, and gas diffused in the space between the lower surface of the lower frame (320) and the upper surface of the second plate (330) is introduced through the first opening (333). On the other hand, the second opening (335) serves as a gas outlet, and gas introduced through the first opening (333) is injected to the lower side of the second plate (330) through the second opening (335).

[0189] The first opening (333) is arranged alternately with the first gas injection hole (312) and the second gas injection hole (322), and the second opening (335) may be formed extending downward from the first opening (333) while having a larger diameter than the first opening (333). Meanwhile, the second opening (335) may include a connecting portion (335a) formed such that the diameter increases at the connection portion with the first opening (333).

[0190] The first opening (333) guides the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to the second opening (335) on the lower side. Thus, the first opening (333) has a selected diameter (D2) to uniformly guide the gas diffused between the lower surface of the lower frame (320) and the upper surface of the second plate (330) to each of the second openings (335). At this time, the first opening (333) may have a diameter (D2) such that its interior can form a plasma sheath region. To this end, the first opening (333) may have a diameter (D2) of 0.5 to 1.0 mm. If the diameter (D2) of the first opening (333) is formed to be less than 0.5 mm, gas cannot flow smoothly through the first opening (333), and it becomes difficult to remove particles that may exist within the first opening (333) during cleaning. On the other hand, if the diameter (D2) of the first opening (333) is formed to exceed 1.0 mm, plasma may be generated within the first opening (333), which may cause blockage by particles. Thus, the first opening (333) extends from the upper surface of the second plate (330) and may be formed to be shorter than the length of the second opening (335).

[0191] The second opening (335) is formed by connecting it to the lower side of the first opening (333). The second opening (335) generates plasma inside the second plate (330), that is, in a roughly cylindrical space. In other words, the second opening (335) provides a large surface area to promote the plasma ionization of the gas flowing into the second opening (335), thereby generating high-density plasma.

[0192] Meanwhile, the second opening (335) may include a connecting portion (335a) formed such that its diameter increases at the connection portion with the first opening (333). The connecting portion (335a) serves to smoothly transfer gas supplied through the first opening (333) to the second opening (335) from the upper side of the second opening (335). Such a connecting portion (335a) may have a shape in which the cross-section gradually increases from one end connected to the first opening (333) to the other end, thereby allowing the gas supplied through the first opening (333) to be guided through the connecting portion (335a) without stagnation and smoothly transferred to the second opening (335). However, the connecting portion (335a) is not an essential component, and if the connecting portion (335a) is omitted, a cylindrical second opening (335) may be directly connected to the lower side of the first opening (333).

[0193] The power supply unit (400) may be connected to the gas supply unit (300) to supply power to the gas supply unit (300) for generating plasma within the chamber (10). That is, the power supply unit (400) may supply RF power for generating plasma within the chamber (10).

[0194] The power supply device (400) is connected to the second plate (330) to supply RF power only to the second plate (330), and in this case, the first plate (310, 320) can be grounded. At this time, the first plate (310, 320) and the second plate (330) can be insulated by a second sealing member (360) formed of an insulating material. In this way, when the power supply device (400) supplies RF power to the second plate (330) and the first plate (310, 320) is grounded, the first plate (310, 320) and the second plate (330) each form electrodes for generating capacitively coupled plasma (CCP). Additionally, the substrate support (22) is also grounded so that capacitively coupled plasma can be generated between the second plate (330) and the support (22). Alternatively, the power supply unit (400) may be configured to supply RF power to the first plate (310, 320) and the second plate (330), respectively.

[0195] Although embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments and may be modified in various ways within the scope of the technical spirit of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of protection of the present invention shall be interpreted by the claims, and all technical spirits within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention.

Claims

1. As a method for manufacturing a solar cell, A step of forming a nitrogen-containing buffer layer on a substrate; and The method comprises the step of forming a first compound layer comprising one or both of a group 3 element and a group 5 element on the buffer layer, and A method for manufacturing a solar cell characterized in that the first compound layer has a crystal structure.

2. As a method for manufacturing a solar cell, A step of preparing a substrate having multiple through holes formed therein; A step of forming a nitrogen-containing buffer layer on the upper surface of the above substrate; A step of forming a first compound layer comprising one or both of a group 3 element and a group 5 element on the above buffer layer; and A method for manufacturing a solar cell comprising the step of forming a first electrode inside the plurality of through holes or on the lower surface of the substrate.

3. In Paragraph 1 or 2, A method for manufacturing a solar cell in which the above buffer layer comprises one or more of SiN, SiON, AlN, TiN, MoN, and CoN.

4. In Paragraph 1 or 2, A method for manufacturing a solar cell in which the first compound layer comprises one or more of GaN, GaO, GaON, InGaN, AlGaN, InAlGaN, GaAs, GaP, SeGe, InP, InSb, InAs, AlAs, AlGaAs, GaInP, GaAsP, AlInP, and AlInAs.

5. In Paragraph 1 or 2, A method for manufacturing a solar cell characterized in that the substrate is one of a glass substrate, a square substrate, a circular substrate, and a silicon substrate.

6. In Paragraph 2, A method for manufacturing a solar cell characterized in that the first electrode is formed inside the plurality of through holes and on the lower surface of the substrate.

7. A step of forming a buffer layer having a first opening in an area corresponding to the plurality of through holes on a substrate having a plurality of through holes; A step of forming an undoped group 3-5 compound layer on the buffer layer, having a second opening in an area corresponding to the plurality of through holes; A step of filling a first electrode within the plurality of through holes, the first opening, and the second opening; and A method for manufacturing a solar cell comprising the step of forming a first doped group 3-5 compound layer on the first electrode and the undoped group 3-5 compound layer.

8. In Paragraph 7, A method for manufacturing a solar cell characterized in that at least one of the buffer layer and the undoped group 3-5 compound layer is additionally formed within a plurality of through holes of the substrate.

9. In Paragraph 7, A method for manufacturing a solar cell characterized in that the above-mentioned undoped group 3-5 compound layer and the above-mentioned first doped group 3-5 compound layer are crystalline.

10. In Paragraph 7, A method for manufacturing a solar cell characterized in that the upper surface of the first electrode coincides with the upper surface of the undoped group 3-5 compound layer, and the lower surface of the first electrode extends further downward than the lower surface of the substrate.

11. In Paragraph 7, A step of forming an MQW (Multi Quantum Wells) structural layer on the first doped group 3-5 compound layer; A step of forming a second doped group 3-5 compound layer having opposite polarity to the first doped group 3-5 compound layer on the above MQW (Multi Quantum Wells) structural layer; and A method for manufacturing a solar cell characterized by further including the step of forming a second electrode on the second doped group 3-5 compound layer.

12. In Paragraph 7, The step of forming the above-mentioned undoped group 3-5 compound layer comprises a process of injecting one or more gases containing a group 3 element into a chamber, a process of injecting one or more gases containing a group 5 element into the chamber, and a process of injecting plasma gas into the chamber to form plasma. A method for manufacturing a solar cell, characterized in that the step of forming the first doped 3-5 group compound layer comprises: a process of injecting one or more gases containing a group 3 element into a chamber; a process of injecting one or more gases containing a group 5 element into the chamber; a process of injecting a first dopant-containing gas into the chamber; and a process of injecting a plasma gas into the chamber to form a plasma.

13. In Paragraph 12, A method for manufacturing a solar cell characterized by performing the process of injecting the first dopant-containing gas simultaneously with at least one of the following processes: a process of injecting one or more gases containing the group 3 element, a process of injecting one or more gases containing the group 5 element, and a process of injecting the plasma gas.

14. In Paragraph 12, A method for manufacturing a solar cell characterized in that the plasma gas comprises at least one gas selected from the group consisting of H2, Ar, N2, O2, O3, and Ge.

15. In Paragraph 12, One or more gases containing the above-mentioned Group 3 elements are injected through a plurality of first injection holes of the first gas injection unit, and One or more gases containing the above-mentioned Group 5 elements are injected through a plurality of second injection holes of the second gas injection unit, and One or more gases containing the above-mentioned group 3 elements are supplied to the plurality of first injection holes through the first gas flow path, and one or more gases containing the above-mentioned group 5 elements are supplied to the plurality of second injection holes through the second gas flow path, and A method for manufacturing a solar cell characterized in that the first gas channel and the second gas channel are provided independently of each other.

16. In Paragraph 15, It further includes a plurality of third injection holes communicating with the plurality of first injection holes or the plurality of second injection holes, and A method for manufacturing a solar cell characterized by injecting one or more gases containing the above-mentioned group 3 elements through the first injection hole and the third injection hole, or injecting one or more gases containing the above-mentioned group 5 elements through the second injection hole and the third injection hole.

17. A substrate having multiple through holes; A buffer layer provided on the substrate and having a first opening in an area corresponding to the plurality of through holes; An undoped group 3-5 compound layer provided on the buffer layer and having a second opening in an area corresponding to the plurality of through holes; A plurality of through holes, a first opening, and a first electrode filled within the second opening; A first doped group 3-5 compound layer provided on the first electrode and the undoped group 3-5 compound layer; An MQW (Multi Quantum Wells) structural layer provided on the first doped group 3-5 compound layer; A second doped group 3-5 compound layer provided on the above MQW (Multi Quantum Wells) structural layer and having opposite polarity to the first doped group 3-5 compound layer; and A solar cell comprising a second electrode provided on the second doped group 3-5 compound layer.

18. In Paragraph 17, A solar cell characterized in that at least one of the buffer layer and the undoped group 3-5 compound layer is additionally formed within a plurality of through holes of the substrate.

19. In Paragraph 17, A solar cell characterized in that the above-mentioned undoped group 3-5 compound layer, the above-mentioned first-doped group 3-5 compound layer, and the above-mentioned second-doped group 3-5 compound layer are crystalline.

20. In Paragraph 17, A solar cell characterized in that the upper surface of the first electrode coincides with the upper surface of the undoped group 3-5 compound layer, and the lower surface of the first electrode extends further downward than the lower surface of the substrate.

Images