Semiconductor device and method for fabricating semiconductor device

Abstract

This semiconductor device (100) comprises an element body (10), a capacitor part (30), an inductor part (50), and a first columnar interconnect (81). The capacitor part (30) and the inductor part (50) are located inside the element body (10). A part of the inductor part (50) is located in the same layer as the capacitor part (30) in a direction orthogonal to a first main surface (100A) of the element body (10). The capacitor part (30) comprises an aluminum oxide body (41), a first electrode layer (46), a dielectric layer (48), and a second electrode layer (47). The first electrode layer (46), the dielectric layer (48), and the second electrode layer (47) are layered along the outer surface of the aluminum oxide body (41) on a third positive direction (ZA) side, and along the inner surfaces of a plurality of holes (42) in the aluminum oxide body (41). The dimension of an inductor interconnect (51) of the inductor part (50) in the direction orthogonal to the first main surface (100A) is greater than the dimension of the capacitor part (30) in the direction orthogonal to the first main surface (100A).

Description

Semiconductor device and method for manufacturing semiconductor device

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.

[0002] The semiconductor device of Patent Document 1 includes a body, a capacitor, and an inductor. The capacitor is located inside the body. The inductor is located inside the body.

[0003] Japanese Patent Translation No. 2023-550774

[0004] In a semiconductor device such as that of Patent Document 1, there may be a case where it is desired to increase the capacitance value of the capacitor. In this case, it is conceivable to increase the area of the electrode layer of the capacitor. However, due to an increase in the capacitance value of the capacitor portion, it is not preferable that the dimensions of the semiconductor device in the direction parallel to the main surface increase. Also, there may be a case where it is desired to reduce the DC resistance of the inductor. In this case, similarly to the above, due to a reduction in the DC resistance of the inductor, it is not preferable that the dimensions of the semiconductor device in the direction parallel to the main surface increase.

[0005] A semiconductor device for solving the above problems comprises a base body having a planar main surface, a capacitor portion located inside the base body, an inductor portion located inside the base body and having a portion of it located on the same layer as the capacitor portion in a direction perpendicular to the main surface, and a columnar wiring located inside the base body, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion, wherein when a specific direction perpendicular to the main surface is defined as the positive direction and the direction opposite to the positive direction is defined as the negative direction, the capacitor portion extends from the outer surface on the positive side to the negative side The inductor comprises an aluminum oxide body having a plurality of holes extending toward the opposite side, a first electrode layer laminated on the outer surface on the forward side of the aluminum oxide body and on the inner surfaces of the plurality of holes, a dielectric layer laminated on the side opposite to the aluminum oxide body relative to the first electrode layer, and a second electrode layer laminated on the side opposite to the first electrode layer relative to the dielectric layer, wherein the inductor portion includes inductor wiring extending parallel to the main surface, and the dimensions of the inductor wiring in the direction perpendicular to the main surface are larger than the dimensions of the capacitor portion in the direction perpendicular to the main surface.

[0006] A method for manufacturing a semiconductor device to solve the above problems includes: an aluminum layer formation step of forming an intermediate mainly composed of aluminum on the main surface of a base substrate; an anodic oxidation step, performed after the aluminum layer formation step, in which a portion of the intermediate is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive side to the negative side, with the direction perpendicular to the main surface being defined as the positive direction and the opposite direction as the negative direction; a first electrode layer formation step, performed after the anodic oxidation step, in which a first electrode layer is laminated on the outer surface on the positive side and on the inner surfaces of the plurality of holes of the aluminum oxide body; and a first electrode layer formation step, performed after the first electrode layer formation step. The method comprises: a dielectric layer formation step of laminating a dielectric layer on the side of the electrode layer opposite to the aluminum oxide body; a second electrode layer formation step, after the dielectric layer formation step, of laminating a second electrode layer on the side of the dielectric layer opposite to the first electrode layer; a columnar wiring formation step, after the second electrode layer formation step, of forming columnar wiring that is electrically connected to the second electrode layer and extends toward the positive direction relative to the second electrode layer; a first part formation step, after the aluminum layer formation step, of forming a part of the intermediate body as a first part of inductor wiring; and a second part formation step, after the first part formation step, of forming a second part of the inductor wiring on the positive-direction outer surface of the first part.

[0007] With the above configuration, it is possible to suppress an increase in the dimensions of the semiconductor device in the direction parallel to the main plane, which can be caused by an increase in the capacitance value of the capacitor section or a decrease in the DC resistance of the inductor section.

[0008] Figure 1 is a cross-sectional view of a semiconductor device according to the first embodiment. Figure 2 is a cross-sectional view of the semiconductor device according to the first embodiment along line 2-2 in Figure 1. Figure 3 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 4 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 5 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 6 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 7 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 8 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 9 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 10 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 11 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 12 is an explanatory diagram showing a method for manufacturing a semiconductor device according to the first embodiment. Figure 13 is a cross-sectional view of a semiconductor device according to the second embodiment.

[0009] <First Embodiment> <Outline Configuration of Semiconductor Device> Hereinafter, the first embodiment of the present disclosure will be described with reference to Figures 1 to 12. First, the outline configuration of the semiconductor device 100 will be described.

[0010] As shown in Figure 1, the semiconductor device 100 is generally rectangular in shape. The semiconductor device 100 comprises a base body 10, a capacitor section 30, and an inductor section 50. The base body 10 is generally rectangular in shape. That is, the base body 10 has six planar outer surfaces. Of these six outer surfaces, one specific surface is designated as the first main surface 100A. The surface located opposite to the first main surface 100A and parallel to the first main surface 100A is designated as the second main surface 100B. Furthermore, the four outer surfaces perpendicular to the first main surface 100A, in other words, the outer surfaces excluding the first main surface 100A and the second main surface 100B, are designated as side surfaces 100C. The shapes of the first main surface 100A, the second main surface 100B, and the side surfaces 100C are all roughly rectangular.

[0011] Here, as shown in Figures 1 and 2, the axis parallel to the long side of the first main surface 100A is defined as the first axis X. The axis parallel to the short side of the first main surface 100A is defined as the second axis Y. The axis perpendicular to the first main surface 100A is defined as the third axis Z. In this embodiment, the first axis X, the second axis Y, and the third axis Z are orthogonal to each other.

[0012] Furthermore, a specific direction along the first axis X is designated as the first positive direction XA, and the direction opposite to the first positive direction XA is designated as the first negative direction XB. A specific direction along the second axis Y is designated as the second positive direction YA, and the direction opposite to the second positive direction YA is designated as the second negative direction YB. A specific direction along the third axis Z is designated as the third positive direction ZA, and the direction opposite to the third positive direction ZA is designated as the third negative direction ZB.

[0013] As shown in Figure 1, the base body 10 comprises a substrate 12, a first insulating layer 13, an insulator 14, and a second insulating layer 15. The substrate 12, the first insulating layer 13, the insulator 14, and the second insulating layer 15 are arranged in this order from the third negative direction ZB toward the third positive direction ZA.

[0014] The first insulating layer 13 and the insulator 14 house the capacitor section 30. In other words, the capacitor section 30 is located inside the base body 10. The first insulating layer 13, the insulator 14, and the second insulating layer 15 house the inductor section 50. In other words, the inductor section 50 is located inside the base body 10.

[0015] <Detailed Configuration of Semiconductor Device> Next, the detailed configuration of the semiconductor device 100 will be described. As shown in Figure 1, the substrate 12 is rectangular in shape. The substrate 12 extends on a plane parallel to the first main surface 100A. The material of the substrate 12 is silicon. That is, the substrate 12 contains silicon. Note that "parallel" does not mean parallel in a strict sense, but rather allows for manufacturing errors, etc. For example, if the acute angle between the substrate 12 and the first main surface 100A is less than 5 degrees, it is considered to be parallel.

[0016] The first insulating layer 13 is in contact with the outer surface of the substrate 12 on the third positive direction ZA side. The shape of the first insulating layer 13 is a rectangular plate. The first insulating layer 13 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through to the third positive direction ZA, the shape of the outer edge of the first insulating layer 13 is the same as the shape of the outer edge of the substrate 12. An example of the material of the first insulating layer 13 is SiO ２ That is the case.

[0017] The insulator 14 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. In other words, the insulator 14 is located on the third positive direction ZA side with respect to the substrate 12. The shape of the insulator 14 is a rectangular parallelepiped. When the semiconductor device 100 is viewed through with the third positive direction ZA facing the substrate, the shape of the outer edge of the insulator 14 is the same as the shape of the outer edge of the first insulating layer 13. The dimensions of the insulator 14 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the substrate 12 in the direction perpendicular to the first main surface 100A. An example of the material of the insulator 14 is photosensitive polyimide. That is, the insulator 14 contains an organic compound. In this embodiment, the effective relative permeability of at least a portion of the insulator 14 is greater than 1.

[0018] The capacitor portion 30 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. The capacitor portion 30 has a rectangular parallelepiped shape overall. The capacitor portion 30 comprises a barrier film 31, a wiring body 32, a shield body 35, and an insulating layer 37. The capacitor portion 30 comprises an aluminum oxide body 41, a first electrode layer 46, a second electrode layer 47, and a dielectric layer 48.

[0019] The barrier film 31 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. The barrier film 31 has a rectangular plate shape. The barrier film 31 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through to the third positive direction ZA, the insulator 14 surrounds the barrier film 31. The material of the barrier film 31 is a metal mainly composed of tungsten.

[0020] The wiring 32 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. That is, the wiring 32 is electrically connected to the barrier film 31. When the semiconductor device 100 is viewed through to the third positive direction ZA, the wiring 32 is located in a portion of the region where the barrier film 31 exists, including one end of the first positive direction XA. The shape of the wiring 32 is generally that of a rectangular parallelepiped. The material of the wiring 32 is a metal mainly composed of aluminum.

[0021] The shield body 35 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. Therefore, in the third positive direction ZA, the shield body 35 is located in the same layer as the wiring body 32. When the semiconductor device 100 is viewed through to the third positive direction ZA, the shield body 35 is located in a portion of the region where the barrier film 31 exists, including one end of the first negative direction XB. The shape of the shield body 35 is generally that of a rectangular parallelepiped. The material of the shield body 35 is a metal mainly composed of aluminum.

[0022] As shown in Figure 1, the aluminum oxide body 41 is in contact with the outer surface of the barrier film 31 on the third positive direction ZA side. Therefore, in the third positive direction ZA, the aluminum oxide body 41 is located in the same layer as the wiring body 32 and the shield body 35. When the semiconductor device 100 is viewed through in the third positive direction ZA, the aluminum oxide body 41 is located between the wiring body 32 and the shield body 35 in the region where the barrier film 31 exists. Also, when the semiconductor device 100 is viewed through in the third positive direction ZA, the aluminum oxide body 41 is covered by the insulator 14. In other words, the insulator 14 covers the outer surface of the aluminum oxide body 41. The aluminum oxide body 41 has a lower electrical resistance than the insulator 14. The shape of the aluminum oxide body 41 is generally a rectangular parallelepiped. The material of the aluminum oxide body 41 is almost entirely aluminum oxide, but it may contain impurities.

[0023] As shown in Figure 2, the aluminum oxide body 41 has a plurality of holes 42. The holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the third negative direction ZB side. Specifically, when viewing the semiconductor device 100 through the aluminum oxide body 41 facing the third positive direction ZA, the holes 42 located near the center of the aluminum oxide body 41 extend generally parallel to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the outer surface on the third negative direction ZB side. That is, the holes 42 located near the center of the aluminum oxide body 41 penetrate the aluminum oxide body 41 along the third axis Z. Note that in each drawing, the inner diameter 42D of each hole 42 is exaggerated in the illustration. Also, an example of the actual inner diameter 42D of each hole 42 is about 0.08 μm. In Figure 2, the opening edge of the hole 42 is shown as a perfect circle, but the actual opening edge of the hole 42 does not need to be a perfect circle.

[0024] Furthermore, when viewing the semiconductor device 100 through the third positive direction ZA, the holes 42 located on the outside of the aluminum oxide body 41 extend so as to be inclined with respect to the third axis Z. In this embodiment, these holes 42 extend from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side to the side surface of the aluminum oxide body 41. Note that in Figure 2, the first electrode layer 46, the second electrode layer 47, and the dielectric layer 48, which will be described later, are not shown.

[0025] As shown in Figure 1, the insulating layer 37 is in contact with the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the outer surface of the wiring body 32 on the third positive direction ZA side, and the outer surface of the shield body 35 on the third positive direction ZA side. When the semiconductor device 100 is viewed through with the third positive direction ZA facing, the shape of the outer edge of the insulating layer 37 is the same as the shape of the outer edges of the aluminum oxide body 41, the wiring body 32, and the shield body 35. Also, when the semiconductor device 100 is viewed through with the third positive direction ZA facing, the shape of the outer edge of the insulating layer 37 is the same as the shape of the outer edge of the barrier film 31. When the semiconductor device 100 is viewed through with the third positive direction ZA facing, the insulating layer 37 is not located near the center of the aluminum oxide body 41. That is, the central part of the outer surface of the aluminum oxide body 41 on the third positive direction ZA side is not covered by the insulating layer 37. Also, when the semiconductor device 100 is viewed through with the third positive direction ZA facing, the insulating layer 37 is not located near the center of the wiring body 32. In other words, the central part of the outer surface of the wiring body 32 on the third positive direction ZA side is not covered by the insulating layer 37.

[0026] The first electrode layer 46 is in contact with the aluminum oxide body 41. Specifically, the first electrode layer 46 is laminated on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the insulating layer 37 on the third positive direction ZA side, and the outer surface of the barrier film 31 on the third positive direction ZA side. That is, the first electrode layer 46 is also in contact with the barrier film 31. Note that the above parts of the first electrode layer 46 are continuous. That is, the first electrode layer 46 is not separated. In this embodiment, the first electrode layer 46 is laminated only on the inner surface of the hole 42 located near the center of the aluminum oxide body 41 when viewing the semiconductor device 100 with the third positive direction ZA facing through it. An example of the material of the first electrode layer 46 is a metal mainly composed of aluminum.

[0027] Here, among the holes 42, those in which the first electrode layer 46 is laminated on the inner surface are designated as first holes 42A, and those in which the first electrode layer 46 is not laminated on the inner surface are designated as second holes 42B. When the semiconductor device 100 is viewed through with the third positive direction ZA, the multiple second holes 42B are located on the outside, surrounding the multiple first holes 42A. In other words, when the semiconductor device 100 is viewed through with the third positive direction ZA, the multiple second holes 42B are located on the outside relative to the multiple first holes 42A.

[0028] The dielectric layer 48 is in contact with the first electrode layer 46. Specifically, the dielectric layer 48 is laminated over almost the entire area of ​​the first electrode layer 46 on the side opposite to the aluminum oxide body 41. An example of the material of the dielectric layer 48 is SiO ２ That is the case.

[0029] The second electrode layer 47 is in contact with the dielectric layer 48. Specifically, the second electrode layer 47 is laminated over almost the entire area of ​​the dielectric layer 48 on the side opposite to the first electrode layer 46. An example of the material of the second electrode layer 47 is a metal mainly composed of aluminum.

[0030] As shown in Figure 1, the semiconductor device 100 includes a first capacitor wiring layer 61, a second capacitor wiring layer 62, a first columnar wiring 81, and a second columnar wiring 82. The first capacitor wiring layer 61 is in contact with the outer surface of the second electrode layer 47 of the capacitor section 30 on the third positive direction ZA side. That is, the first capacitor wiring layer 61 is electrically connected to the second electrode layer 47 of the capacitor section 30. When the semiconductor device 100 is viewed through to the third positive direction ZA, the first capacitor wiring layer 61 is located in the region where the second electrode layer 47 exists, overlapping with the aluminum oxide body 41. The material of the first capacitor wiring layer 61 is a metal mainly composed of aluminum.

[0031] The second capacitor wiring layer 62 is in contact with the outer surface of the wiring body 32 of the capacitor section 30 on the third positive direction ZA side. That is, the second capacitor wiring layer 62 is electrically connected to the wiring body 32 of the capacitor section 30. When the semiconductor device 100 is viewed through to the third positive direction ZA, the second capacitor wiring layer 62 is located near the center of the wiring body 32. The second capacitor wiring layer 62 is not in contact with the first capacitor wiring layer 61. The material of the second capacitor wiring layer 62 is a metal mainly composed of aluminum.

[0032] The first columnar wiring 81 is located inside the insulator 14. The first columnar wiring 81 is in contact with the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. That is, the first columnar wiring 81 is electrically connected to the second electrode layer 47 of the capacitor section 30 via the first capacitor wiring layer 61. The first columnar wiring 81 extends from the first capacitor wiring layer 61 toward the third positive direction ZA. That is, the first columnar wiring 81 extends in a direction perpendicular to the first main surface 100A. The outer surface of the first columnar wiring 81 on the third positive direction ZA side is exposed on the outer surface of the insulator 14 on the third positive direction ZA side. In this embodiment, the shape of the first columnar wiring 81 is a tapered shape in which the outer diameter decreases as it moves toward the third negative direction ZB side. An example of the material of the first columnar wiring 81 is a metal mainly composed of copper.

[0033] The second columnar wiring 82 is located inside the insulator 14. The second columnar wiring 82 is in contact with the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. That is, the second columnar wiring 82 is electrically connected to the wiring body 32 of the capacitor section 30 via the second capacitor wiring layer 62. The second columnar wiring 82 extends from the second capacitor wiring layer 62 toward the third positive direction ZA. That is, the second columnar wiring 82 extends in a direction perpendicular to the first main surface 100A. The outer surface of the second columnar wiring 82 on the third positive direction ZA side is exposed on the outer surface of the insulator 14 on the third positive direction ZA side. In this embodiment, the shape of the second columnar wiring 82 is a tapered shape in which the outer diameter decreases as it moves toward the third negative direction ZB side. An example of the material of the second columnar wiring 82 is a metal mainly composed of copper.

[0034] In this embodiment, the minimum width dimension 81W of the first columnar wiring 81 is slightly smaller than the minimum width dimension 82W of the second columnar wiring 82. Also, the minimum width dimension 81W of the first columnar wiring 81 is 100 times or more the inner diameter 42D of the hole 42 of the capacitor section 30. Similarly, the minimum width dimension 82W of the second columnar wiring 82 is 100 times or more the inner diameter 42D of the hole 42 of the capacitor section 30. An example of the minimum width dimension 81W of the first columnar wiring 81 is about 10 μm. Here, the width dimension 81W of the first columnar wiring 81 is the maximum distance from one edge to the other edge of the first columnar wiring 81 in a direction perpendicular to the direction in which the first columnar wiring 81 extends. In this embodiment, the width dimension 81W of the first columnar wiring 81 is the outer diameter of the first columnar wiring 81. Similarly, the width dimension 82W of the second columnar wiring 82 is the maximum distance from one edge to the other edge of the second columnar wiring 82 in a direction perpendicular to the direction in which the second columnar wiring 82 extends. In this embodiment, the width dimension 82W of the second columnar wiring 82 is the outer diameter of the second columnar wiring 82. Also, the inner diameter 42D of the hole 42 is the diameter of a perfect circle with the same area as the opening area on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side.

[0035] As shown in Figure 1, the inductor section 50 includes inductor wiring 51 and a barrier film 59. The barrier film 59 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. Therefore, in the third positive direction ZA, the barrier film 59 is located in the same layer as the barrier film 31 of the capacitor section 30. The barrier film 59 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the barrier film 59 is parallel to the third axis Z. When the semiconductor device 100 is viewed through in the third negative direction ZB, the shape of the barrier film 59 is generally spiral-shaped. The material of the barrier film 59 is a metal mainly composed of tungsten. Note that "orthogonal" does not mean orthogonal in a strict sense, but rather allows for manufacturing errors, etc. For example, if the angle between the pivot axis of the barrier film 59 and the first main surface 100A is less than 90 degrees ± 5 degrees, they are considered to be orthogonal.

[0036] As shown in Figure 1, the inductor wiring 51 is in contact with the outer surface of the barrier film 59 on the third positive direction ZA side. In the third positive direction ZA, a portion of the inductor wiring 51 is located in the same layer as the aluminum oxide body 41 of the capacitor portion 30.

[0037] As shown in Figure 2, the inductor wiring 51 extends parallel to the first main surface 100A, revolving around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the inductor wiring 51 is parallel to the third axis Z. When the semiconductor device 100 is viewed through in the third negative direction ZB, the shape of the inductor wiring 51 is the same as the shape of the barrier film 59. That is, when the semiconductor device 100 is viewed through in the third negative direction ZB, the shape of the inductor wiring 51 is generally spiral-shaped. Specifically, when the semiconductor device 100 is viewed through in the third negative direction ZB, the inductor wiring 51 has a spiral shape in which the diameter decreases as it rotates clockwise.

[0038] As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the inductor wiring 51 does not overlap with the capacitor section 30. Furthermore, the minimum width dimension 51W of the inductor wiring 51 is 100 times or more the inner diameter 42D of the hole 42 in the capacitor section 30. An example of the minimum width dimension 51W of the inductor wiring 51 is approximately 10 μm. Here, the minimum width dimension 51W of the inductor wiring 51 is the shortest distance from one edge to the other of the inductor wiring 51 in a direction perpendicular to the direction in which the inductor wiring 51 extends, when the semiconductor device 100 is viewed through in the third negative direction ZB. Also, as described above, the inner diameter 42D of the hole 42 is the diameter of a perfect circle with the same area as the opening area on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side.

[0039] In the following, the inner end of the inductor wiring 51 is referred to as the first end 51A, and the outer end of the inductor wiring 51 is referred to as the second end 51B.

[0040] As shown in Figure 1, the inductor wiring 51 extends from the barrier film 59 toward the third positive direction ZA. The outer surface of the inductor wiring 51 toward the third positive direction ZA is exposed on the outer surface of the insulator 14 toward the third positive direction ZA. The dimensions of the inductor wiring 51 in the direction perpendicular to the first main surface 100A are greater than the dimensions of the capacitor portion 30 in the direction perpendicular to the first main surface 100A. Here, the dimensions of the inductor wiring 51 in the direction perpendicular to the first main surface 100A are the dimensions in the direction perpendicular to the first main surface 100A from the end of the inductor wiring 51 toward the third positive direction ZA to the end of the inductor wiring 51 toward the third negative direction ZB. Also, the dimensions of the capacitor portion 30 in the direction perpendicular to the first main surface 100A are the dimensions in the direction perpendicular to the first main surface 100A from the end of the capacitor portion 30 toward the third positive direction ZA to the end of the capacitor portion 30 toward the third negative direction ZB.

[0041] Furthermore, in this embodiment, the dimensions of the inductor section 50 in the direction perpendicular to the first main surface 100A are the same as the dimensions of the capacitor section 30 and the first columnar wiring 81 in the direction perpendicular to the first main surface 100A. Here, the dimensions of the capacitor section 30 and the first columnar wiring 81 in the direction perpendicular to the first main surface 100A are the dimensions in the direction perpendicular to the first main surface 100A from the end of the first columnar wiring 81 on the third positive direction ZA side to the end of the capacitor section 30 on the third negative direction ZB side. Note that the dimensions of the inductor section 50 in the direction perpendicular to the first main surface 100A are also the same as the dimensions of the capacitor section 30 and the second columnar wiring 82 in the direction perpendicular to the first main surface 100A.

[0042] Hereinafter, the inductor wiring 51 will be roughly classified into a first portion 56 and a second portion 57 and described. The first portion 56 is a part of the inductor wiring 51 that includes an end in the third negative direction ZB. Specifically, the first portion 56 is a portion of the inductor wiring 51 that is located in the same layer as the aluminum oxide body 41 of the capacitor portion 30 in the third positive direction ZA. An example of the material of the first portion 56 is a metal mainly composed of aluminum. Further, the second portion 57 is a portion of the inductor wiring 51 other than the first portion 56. Specifically, the second portion 57 is a portion of the inductor wiring 51 that is located in the same layer as the insulating layer 37, the first capacitor wiring layer 61, and the first columnar wiring 81 of the capacitor portion 30 in the third positive direction ZA. In other words, the second portion 57 is a portion of the inductor wiring 51 that is not located in the same layer as the aluminum oxide body 41 of the capacitor portion 30 in the third positive direction ZA. An example of the material of the second portion 57 is a metal mainly composed of copper. That is, the conductivity of the material of the second portion 57 is higher than the conductivity of the material of the first portion 56. In the present embodiment, the dimension of the second portion 57 in the direction orthogonal to the first main surface 100A is larger than the dimension of the first portion 56 in the direction orthogonal to the first main surface 100A.

[0043] As shown in FIG. 1, the second insulating layer 15 is in contact with the outer surface on the third positive direction ZA side of the insulator 14, the outer surface on the third positive direction ZA side of the first columnar wiring 81, the outer surface on the third positive direction ZA side of the second columnar wiring 82, and the outer surface on the third positive direction ZA side of the inductor wiring 51. The shape of the second insulating layer 15 is a rectangular plate shape. The second insulating layer 15 extends on a plane parallel to the first main surface 100A. When the semiconductor device 100 is viewed through in the third positive direction ZA, the shape of the outer edge of the second insulating layer 15 is the same as the shape of the outer edge of the insulator 14. An example of the material of the second insulating layer 15 is SiO ２ is.

[0044] As shown in FIG. 1, the semiconductor device 100 includes a first connection portion 86, a second connection portion 87, a third connection portion 88, and a fourth connection portion 89. The semiconductor device 100 includes a first terminal 91, a second terminal 92, and a third terminal 93.

[0045] The first connection portion 86 is located inside the second insulating layer 15. The first connection portion 86 is in contact with the outer surface of the first columnar wiring 81 on the third positive direction ZA side. The first connection portion 86 extends from the first columnar wiring 81 toward the third positive direction ZA. The outer surface of the first connection portion 86 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the first connection portion 86 is a metal mainly composed of copper.

[0046] The second connection portion 87 is located inside the second insulating layer 15. The second connection portion 87 is in contact with the outer surface of the second columnar wiring 82 on the third positive direction ZA side. The second connection portion 87 extends from the second columnar wiring 82 toward the third positive direction ZA. The outer surface of the second connection portion 87 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the second connection portion 87 is a metal mainly composed of copper.

[0047] The third connection portion 88 is located inside the second insulating layer 15. The third connection portion 88 is the second end 51B of the inductor wiring 51 and is in contact with the outer surface of the second portion 57 of the inductor wiring 51 on the third positive direction ZA side. The third connection portion 88 extends from the second portion 57 of the inductor wiring 51 toward the third positive direction ZA. The outer surface of the third connection portion 88 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the third connection portion 88 is a metal mainly composed of copper.

[0048] The fourth connection portion 89 is located inside the second insulating layer 15. The fourth connection portion ********** is the first end 51A of the inductor wiring 51 and is in contact with the outer surface of the second portion 57 of the inductor wiring 51 on the third positive direction ZA side. The fourth connection portion 89 extends from the second portion 57 of the inductor wiring 51 toward the third positive direction ZA. The outer surface of the fourth connection portion 89 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the fourth connection portion 89 is a metal mainly composed of copper.

[0049] It should be noted that there seems to be an incomplete expression "The fourth connection portion 89 is the first end 51A of the inductor wiring 51 and is in contact with the outer surface of the second portion 57 of the inductor wiring 51 on the third positive direction ZA side." in the original text. The "**********" part is an indication of this incompleteness. If this is an error in the original, it may need to be corrected for a more accurate translation.The first terminal 91 is in contact with the outer surface of the first connection portion 86 on the third positive direction ZA side and the outer surface of the second insulating layer 15 on the third positive direction ZA side. In other words, the first terminal 91 is electrically connected to the first connection portion 86. The shape of the first terminal 91 is generally rectangular. An example of the material of the first terminal 91 is a metal mainly composed of copper.

[0050] The second terminal 92 is in contact with the outer surface of the second connection portion 87 on the third positive direction ZA side, the outer surface of the third connection portion 88 on the third positive direction ZA side, and the outer surface of the second insulating layer 15 on the third positive direction ZA side. In other words, the second terminal 92 is electrically connected to the second connection portion 87 and the third connection portion 88. The shape of the second terminal 92 is generally rectangular. An example of the material of the second terminal 92 is a metal mainly composed of copper.

[0051] The third terminal 93 is in contact with the outer surface of the fourth connection portion 89 on the third positive direction ZA side and the outer surface of the second insulating layer 15 on the third positive direction ZA side. In other words, the third terminal 93 is electrically connected to the fourth connection portion 89. The shape of the third terminal 93 is generally rectangular. An example of the material of the third terminal 93 is a metal mainly composed of copper.

[0052] <Manufacturing Method> Next, the manufacturing method of the semiconductor device 100 will be described with reference to Figures 3 to 12. In the following, a manufacturing method performed by an operator will be described as an example. In the following, for convenience, not only when an operator operates the manufacturing equipment, but also when the manufacturing equipment is automatically executed based on the operator's settings, will be described as being performed by an operator.

[0053] As shown in Figure 3, first, the workers perform the base preparation step S11. Specifically, as shown in Figure 4, the workers prepare a plate-shaped base substrate 12Z. The dimensions of the main surface 12ZA of the base substrate 12Z are such that multiple semiconductor devices 100 can be molded onto it. Here, the material of the base substrate 12Z is ​​the same as the material of the substrate 12. Also, a portion of the base substrate 12Z constitutes the substrate 12.

[0054] In the following, the axis perpendicular to the main surface 12ZA of the base substrate 12Z is ​​defined as the third axis Z. Furthermore, the direction parallel to the third axis Z in which the main surface 12ZA faces is defined as the third positive direction ZA, and the direction opposite to the third positive direction ZA is defined as the third negative direction ZB. Note that the third positive direction ZA during the manufacturing of the semiconductor device 100 corresponds to the third positive direction ZA in the semiconductor device 100 after manufacturing.

[0055] As shown in Figure 3, the worker then performs the insulating layer formation process S12. Specifically, as shown in Figure 4, the worker forms an intermediate insulating layer 13Z on the main surface 12ZA of the base substrate 12Z, that is, on the outer surface on the third positive direction ZA side of the base substrate 12Z. One example of a method by which the worker forms the intermediate insulating layer 13Z is the sputtering method or the CVD method. "CVD" is an abbreviation for Chemical Vapor Deposition. The "CVD method" is also called chemical vapor deposition. Here, the material of the intermediate insulating layer 13Z is the same as the material of the first insulating layer 13. Also, a portion of the intermediate insulating layer 13Z constitutes the first insulating layer 13.

[0056] As shown in Figure 3, the worker then performs the barrier film formation process S13. Specifically, as shown in Figure 4, the worker forms an intermediate barrier film 31Z on the outer surface of the intermediate insulating layer 13Z on the third positive direction ZA side. One example of a method by which the worker forms the intermediate barrier film 31Z is the sputtering method or the CVD method. Here, the material of the intermediate barrier film 31Z is the same as the material of the barrier film 31 and the barrier film 59. Also, a portion of the intermediate barrier film 31Z constitutes the barrier film 31 and the barrier film 59.

[0057] As shown in Figure 3, the worker then performs the aluminum layer formation process S14. Specifically, as shown in Figure 5, the worker forms the intermediate body 41Z on the outer surface of the intermediate barrier film 31Z on the third positive direction ZA side. In other words, in this embodiment, the worker forms the intermediate body 41Z on the main surface 12ZA of the base substrate 12Z via the intermediate insulating layer 13Z and the intermediate barrier film 31Z. One example of a method by which the worker forms the intermediate body 41Z is the CVD method. As mentioned above, the "CVD method" is also called chemical vapor deposition. Here, the material of the intermediate body 41Z is a metal mainly composed of aluminum. A portion of the intermediate body 41Z constitutes the wiring body 32, the shield body 35, the aluminum oxide body 41, and the first portion 56 of the inductor wiring 51.

[0058] As shown in Figure 3, the worker then performs the mask formation process S15. Specifically, as shown in Figure 5, a mask 101 is formed on the outer surface of the intermediate body 41Z on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the mask, the mask 101 is open in the portion of the intermediate body 41Z that constitutes the aluminum oxide body 41. Examples of methods by which the worker forms the mask 101 include sputtering and CVD.

[0059] As shown in Figure 3, the worker then performs the anodic oxidation process S16. Specifically, as shown in Figure 6, the worker uses the anodic oxidation method to convert a portion of the intermediate 41Z into an aluminum oxide body 41 having multiple pores 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. Here, the anodic oxidation method is a processing method that forms an oxide film on the surface of the intermediate 41Z by passing an electric current through the intermediate 41Z, which is the target object, with the intermediate 41Z as the anode in an electrolytic solution. Then, the pores 42 are formed in the above process. In this anodic oxidation process S16, only the portion of the intermediate 41Z that is in contact with the electrolytic solution is oxidized to become an aluminum oxide body 41. As a result, a portion of the intermediate 41Z is formed as an aluminum oxide body 41. The remaining portion of the intermediate 41Z remains a metal mainly composed of aluminum. The anodic oxidation method is sometimes referred to as an anodic oxidation treatment.

[0060] As shown in Figure 3, the worker then performs the removal process S17. Specifically, the worker removes the mask 101 from the outer surface of the intermediate 41Z on the third positive direction ZA side and from the outer surface of the aluminum oxide body 41 on the third positive direction ZA side.

[0061] As shown in Figure 3, the worker then performs the insulating layer formation process S18. Specifically, as shown in Figure 7, the worker forms an intermediate insulating layer 37Z on the outer surface of the intermediate body 41Z on the third positive direction ZA side and on the outer surface of the aluminum oxide body 41 on the third positive direction ZA side. One example of a method by which the worker forms the intermediate insulating layer 37Z is the sputtering method or the CVD method. The material of the intermediate insulating layer 37Z is the same as the material of the insulating layer 37. A portion of the intermediate insulating layer 37Z constitutes the insulating layer 37.

[0062] As shown in Figure 3, the worker then performs the first electrode layer formation step S31. Specifically, as shown in Figure 7, the worker deposits the intermediate first electrode layer 46Z onto the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the intermediate insulating layer 37Z on the third positive direction ZA side, and the outer surface of the intermediate barrier film 31Z on the third positive direction ZA side. One example of a method by which the worker deposits the intermediate first electrode layer 46Z is the ALD method. "ALD" is an abbreviation for Atomic Layer Deposition. The "ALD method" is also called atomic layer deposition. Here, the material of the intermediate first electrode layer 46Z is the same as the material of the first electrode layer 46. A portion of the intermediate first electrode layer 46Z constitutes the first electrode layer 46.

[0063] As shown in Figure 3, the worker then performs the dielectric layer formation process S32. Specifically, as shown in Figure 7, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z on the third positive direction ZA side. In other words, the worker laminates the intermediate dielectric layer 48Z on the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. One example of a method by which the worker laminates the intermediate dielectric layer 48Z is the ALD method. Here, the material of the intermediate dielectric layer 48Z is the same as the material of the dielectric layer 48. A portion of the intermediate dielectric layer 48Z constitutes the dielectric layer 48.

[0064] As shown in Figure 3, the worker then performs the second electrode layer formation step S33. Specifically, as shown in Figure 7, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z on the third positive direction ZA side. In other words, the worker laminates the intermediate second electrode layer 47Z on the outer surface of the intermediate dielectric layer 48Z opposite to the intermediate first electrode layer 46Z. One example of a method by which the worker laminates the intermediate second electrode layer 47Z is the ALD method. Here, the material of the intermediate second electrode layer 47Z is the same as the material of the second electrode layer 47. A portion of the intermediate second electrode layer 47Z constitutes the second electrode layer 47.

[0065] As shown in Figure 3, the worker then performs the resist formation process S34. Specifically, as shown in Figure 8, the worker forms the resist 102 on the outer surface of the intermediate second electrode layer 47Z on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through to the third positive direction ZA, the resist 102 is located only in the portion that overlaps with the wiring 32, shield 35, aluminum oxide 41, and inductor wiring 51. One example of a method by which the worker forms the resist 102 is photolithography.

[0066] As shown in Figure 3, the worker then performs the etching process S35. Specifically, as shown in Figure 8, the worker removes the portions of the intermediate barrier film 31Z, intermediate body 41Z, intermediate insulating layer 37Z, intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z that do not overlap with the resist 102 when viewing the semiconductor device 100 with the third positive direction ZA facing through it. This etching process S35 forms the first portion 56 of the inductor wiring 51. Therefore, in this embodiment, the etching process S35 functions as a first portion formation process that forms a part of the intermediate body 41Z as the first portion 56 of the inductor wiring 51. One example of a method by which the worker removes the intermediate barrier film 31Z, etc., is dry etching.

[0067] As shown in Figure 3, the worker then performs the peeling process S36. Specifically, the worker peels off the resist 102 on the outer surface of the intermediate second electrode layer 47Z on the third positive direction ZA side.

[0068] As shown in Figure 3, the worker then performs the resist formation process S37. Specifically, the worker forms the resist 103A on the outer surface of the intermediate second electrode layer 47Z on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the resist 103A is located in the area where the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 are formed. In other words, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the resist 103A is not located in the area between the first capacitor wiring layer 61 and the second capacitor wiring layer 62, the area where the second capacitor wiring layer 62 and the wiring body 32 are connected, or the area where the second portion 57 of the inductor wiring 51 is formed. One example of a method by which the worker forms the resist 103A is photolithography.

[0069] As shown in Figure 3, the worker then performs the removal process S38. Specifically, the worker removes the portions of the intermediate first electrode layer 46Z, the intermediate dielectric layer 48Z, and the intermediate second electrode layer 47Z that do not overlap with the resist 103A when the semiconductor device 100 is viewed through in the third positive direction ZA. In other words, the worker removes the portions of the intermediate first electrode layer 46Z, the intermediate dielectric layer 48Z, and the intermediate second electrode layer 47Z that are located between the first capacitor wiring layer 61 and the second capacitor wiring layer 62, the portion where the second capacitor wiring layer 62 and the wiring body 32 are connected, and the portion where the second portion 57 of the inductor wiring 51 is formed.

[0070] As shown in Figure 3, the worker then performs the resist formation process S39. Specifically, the worker forms the resist 103B on the outer surface of the intermediate insulating layer 37Z on the third positive direction ZA side. At this time, when the semiconductor device 100 is viewed through with the third positive direction ZA facing the semiconductor device 100, the resist 103B is located in the portion between the first capacitor wiring layer 61 and the second capacitor wiring layer 62. One example of a method by which the worker forms the resist 103B is photolithography.

[0071] As shown in Figure 3, the worker then performs the removal process S40. Specifically, the worker removes the portion of the intermediate insulating layer 37Z that does not overlap with the resist 103A and resist 103B when viewing the semiconductor device 100 through the third positive direction ZA. In other words, the worker removes the portion of the intermediate insulating layer 37Z where the second capacitor wiring layer 62 and the wiring body 32 are connected, and where the second portion 57 of the inductor wiring 51 is formed.

[0072] As shown in Figure 3, the worker then performs the peeling process S41. Specifically, the worker peels off the resist 103A and resist 103B from the outer surface of the intermediate insulating layer 37Z and the intermediate second electrode layer 47Z on the third positive direction ZA side.

[0073] As shown in Figure 3, the worker then performs the wiring layer formation process S51. Specifically, as shown in Figure 9, the worker forms the first capacitor wiring layer 61 on the outer surface of the intermediate second electrode layer 47Z on the third positive direction ZA side. The worker also forms the second capacitor wiring layer 62 on the outer surface of the wiring body 32 on the third positive direction ZA side. One example of a method by which the worker forms the first capacitor wiring layer 61, etc., is the CVD method.

[0074] As shown in Figure 3, the worker then performs the insulator formation process S52. Specifically, as shown in Figure 10, the worker forms the intermediate insulator 14Z on the outer surface of the intermediate insulating layer 13Z on the third positive direction ZA side, the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side, and the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. At this time, the intermediate insulator 14Z is not located in the area where the first columnar wiring 81, the second columnar wiring 82, and the second portion 57 of the inductor wiring 51 are formed. One example of a method by which the worker forms the intermediate insulator 14Z is photolithography. In this embodiment, the worker adjusts the focus of the UV light in the photolithography method to form a space within the intermediate insulator 14Z in which the first columnar wiring 81 is located, that is, a tapered space in which the outer diameter decreases as it moves toward the third negative direction ZB side. Similarly, by adjusting the focus of UV light in the photolithography method, the workers create a space within the intermediate insulator 14Z in which the second columnar wiring 82 is located, that is, a tapered space in which the outer diameter decreases as it moves toward the third negative direction ZB. Here, the material of the intermediate insulator 14Z is the same as the material of the insulator 14. In addition, a portion of the intermediate insulator 14Z constitutes the insulator 14.

[0075] As shown in Figure 3, the worker then performs the copper layer formation process S53. Specifically, as shown in Figure 10, the worker forms the first columnar wiring 81 on the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. At this time, since a tapered space for the first columnar wiring 81 is formed within the intermediate insulator 14Z, the shape of the first columnar wiring 81 is formed as a tapered shape in which the outer diameter decreases as it approaches the third negative direction ZB side. The worker also forms the second columnar wiring 82 on the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side. At this time, since a tapered space for the second columnar wiring 82 is formed within the intermediate insulator 14Z, the shape of the second columnar wiring 82 is formed as a tapered shape in which the outer diameter decreases as it approaches the third negative direction ZB side. The worker then forms the second portion 57 on the outer surface of the first portion 56 of the inductor wiring 51 on the third positive direction ZA side. Therefore, in this embodiment, the copper layer formation step S53 functions as a columnar wiring formation step that forms a first columnar wiring 81 that is electrically connected to the second electrode layer 47 of the capacitor section 30 and extends toward the third positive direction ZA side relative to the second electrode layer 47. The copper layer formation step S53 also functions as a second part formation step that forms a second part 57 of the inductor wiring 51 on the outer surface of the first part 56 of the inductor wiring 51 toward the third positive direction ZA side. One example of a method by which an operator forms the first columnar wiring 81, etc., is the filled plating method.

[0076] As shown in Figure 3, the worker then performs the removal process S54. Specifically, in the removal process S54, the worker removes foreign matter such as metal that has adhered to the outer surface of the intermediate insulator 14Z on the third positive direction ZA side by the copper layer formation process S53 described above. One example of a method by which the worker removes foreign matter is CMP. "CMP" is an abbreviation for Chemical Mechanical Polishing. "CMP" is also called chemical mechanical polishing.

[0077] As shown in Figure 3, the worker then performs the insulating layer formation process S55. Specifically, as shown in Figure 11, the worker forms an intermediate insulating layer 15Z on the outer surface of the intermediate insulator 14Z on the third positive direction ZA side. One example of a method by which the worker forms the intermediate insulating layer 15Z is printing. Here, the material of the intermediate insulating layer 15Z is the same as the material of the second insulating layer 15. Also, a portion of the intermediate insulating layer 15Z constitutes the second insulating layer 15.

[0078] As shown in Figure 3, the worker then performs the connection part formation process S56. Specifically, as shown in Figure 11, the worker forms a first connection part 86 on the outer surface of the first columnar wiring 81 on the third positive direction ZA side. The worker also forms a second connection part 87 on the outer surface of the second columnar wiring 82 on the third positive direction ZA side. The worker forms a third connection part 88 at the second end 51B of the inductor wiring 51 and on the outer surface of the second portion 57 of the inductor wiring 51 on the third positive direction ZA side. The worker also forms a fourth connection part 89 at the first end 51A of the inductor wiring 51 and on the outer surface of the second portion 57 of the inductor wiring 51 on the third positive direction ZA side. One example of a method by which the worker forms the first connection part 86, etc., is photolithography.

[0079] As shown in Figure 3, the worker then performs the resist formation process S57. Specifically, the worker forms a resist 104 on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. At this time, the resist 104 is not located in the area where the first terminal 91, second terminal 92, and third terminal 93 are formed. One example of a method by which the worker forms the resist 104 is photolithography.

[0080] As shown in Figure 3, the worker then performs the terminal formation process S58. Specifically, as shown in Figure 11, the worker forms the first terminal 91 on the outer surface of the first connection portion 86 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. The worker also forms the second terminal 92 on the outer surface of the second connection portion 87 on the third positive direction ZA side and on the outer surface of the third connection portion 88 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. The worker then forms the third terminal 93 on the outer surface of the fourth connection portion 89 on the third positive direction ZA side and on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side. One example of a method by which the worker forms the first terminal 91, etc., is electroless plating.

[0081] As shown in Figure 3, the worker then performs the peeling process S59. Specifically, the worker peels off the resist 104 on the outer surface of the intermediate insulating layer 15Z on the third positive direction ZA side.

[0082] As shown in Figure 3, the worker then performs the thickness adjustment process S60. Specifically, as shown in Figure 12, the worker forms the substrate 12 by removing a portion of the base substrate 12Z, including the end face in the third negative direction ZB.

[0083] As shown in Figure 3, the next step is to perform the individualization process S61. Specifically, as shown in Figure 12, the worker uses a dicing blade to separate the multiple integrally molded semiconductor devices 100 into individual semiconductor devices 100. In Figure 12, the cross-section SL of the semiconductor device 100 is shown by a dashed line. As a result, a semiconductor device 100 is formed.

[0084] <Operation of this embodiment> As shown in Figure 1, the semiconductor device 100 comprises a base body 10, a capacitor section 30, an inductor section 50, and a first columnar wiring 81. In the capacitor section 30, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 are formed to follow the inner surface of the holes 42 of the aluminum oxide body 41. In other words, the first electrode layer 46, the dielectric layer 48, and the second electrode layer 47 overlap in a curved manner along the inner surface of the holes 42 of the aluminum oxide body 41. Therefore, for example, even if the size of the area of ​​the first electrode layer 46 etc. is the same when viewing the semiconductor device 100 through the third positive direction ZA, the area in which the first electrode layer 46 etc. actually overlaps is larger compared to the case where the first electrode layer 46 etc. is a flat layer. Also, the dimensions of the inductor wiring 51 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the capacitor section 30 in the direction perpendicular to the first main surface 100A.

[0085] <Effects of this embodiment> (1-1) According to this embodiment, even if the dimensions of the capacitor portion 30 in the direction parallel to the first main surface 100A are the same, for example, the capacitance value of the capacitor portion 30 is larger compared to the case where the first electrode layer 46 etc. is a flat layer. Also, according to this embodiment, for example, the DC resistance of the inductor wiring 51 in the direction perpendicular to the first main surface 100A is smaller compared to the case where the dimensions of the inductor wiring 51 in the direction perpendicular to the first main surface 100A are the same as the dimensions of the capacitor portion 30 in the direction perpendicular to the first main surface 100A. As a result, it is possible to suppress the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A due to an increase in the capacitance value of the capacitor portion 30 or a decrease in the DC resistance of the inductor wiring 51.

[0086] (1-2) As shown in Figure 1, the dimensions of the inductor portion 50 in the direction perpendicular to the first main surface 100A are the same as the dimensions of the capacitor portion 30 and the first columnar wiring 81 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, the complexity of the structure of the semiconductor device 100 can be suppressed compared to the case where the dimensions of the inductor portion 50 in the direction perpendicular to the first main surface 100A are different from the dimensions of the capacitor portion 30 and the first columnar wiring 81 in the direction perpendicular to the first main surface 100A.

[0087] (1-3) The minimum width dimension 81W of the first columnar wiring 81 is 100 times or more the inner diameter 42D of the hole 42 of the capacitor section 30. With the above configuration, since the inner diameter 42D of the hole 42 is extremely small, it is possible to increase the number of holes 42. And, if the number of holes 42 is increased, it is easier to efficiently increase the capacitance value of the capacitor section 30. As a result, the increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A, which is caused by the increase in the capacitance value of the capacitor section 30, can be further suppressed.

[0088] (1-4) As shown in Figure 1, the inductor wiring 51 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. Here, the portion of the inductor wiring 51 that is located in the same layer as the aluminum oxide body 41 of the capacitor portion 30 in the third positive direction ZA is defined as the first portion 56. The portion of the inductor wiring 51 that is not located in the same layer as the aluminum oxide body 41 of the capacitor portion 30 in the third positive direction ZA is defined as the second portion 57. The dimensions of the second portion 57 of the inductor wiring 51 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the first portion 56 of the inductor wiring 51 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, the DC resistance of the inductor wiring 51 can be suppressed even more than when the dimensions of the second portion 57 are the same as the dimensions of the first portion 56.

[0089] (1-5) The conductivity of the material of the second portion 57 of the inductor wiring 51 is higher than that of the material of the first portion 56 of the inductor wiring 51. With the above configuration, for example, the DC resistance of the inductor wiring 51 can be suppressed even more than when the conductivity of the material of the second portion 57 is the same as that of the material of the first portion 56.

[0090] (1-6) As shown in Figure 1, the first portion 56 of the inductor wiring 51 is located in the same layer as the aluminum oxide body 41 of the capacitor portion 30 in the third positive direction ZA. The material of the first portion 56 is a metal mainly composed of aluminum. With the above configuration, for example, as shown in the aluminum layer formation step S14 in Figure 3, the intermediate body 41Z constituting the aluminum oxide body 41 and the first portion 56 can be formed in the same process as the manufacturing process of the semiconductor device 100.

[0091] (1-7) As shown in Figure 1, the element 10 is provided with an insulator 14. The insulator 14 covers the outer surface of the aluminum oxide body 41. The insulator 14 contains an organic compound. With the above configuration, because the insulator 14 contains an organic compound, the insulator 14 is relatively soft. Therefore, the aluminum oxide body 41 can be protected more reliably by the insulator 14 covering the aluminum oxide body 41.

[0092] (1-8) As shown in Figure 1, the base body 10 comprises a substrate 12 and an insulator 14. The insulator 14 covers the outer surface of the aluminum oxide body 41. The dimensions of the insulator 14 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the substrate 12 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, the aluminum oxide body 41 is more easily protected by the insulator 14 compared to the case where the dimensions of the insulator 14 are the same as the dimensions of the substrate 12.

[0093] (1-9) The effective relative permeability of at least a portion of the insulator 14 is greater than 1. With the above configuration, magnetic noise can be removed by the insulator 14. Furthermore, an improvement in the inductance of the inductor section 50 can be expected.

[0094] (1-10) As shown in Figure 1, among the holes 42, those in which the first electrode layer 46 is laminated on the inner surface are designated as first holes 42A, and those in which the first electrode layer 46 is not laminated on the inner surface are designated as second holes 42B. When the semiconductor device 100 is viewed through with the third positive direction ZA facing upward, the multiple second holes 42B are located outward relative to the multiple first holes 42A. With the above configuration, the porosity of the second holes 42B tends to be higher than that of the first holes 42A. Therefore, the area of ​​the aluminum oxide body 41 where the second holes 42B are located is more flexible than the area of ​​the aluminum oxide body 41 where the first holes 42A are located. As a result, the flexibility of the capacitor portion 30 can be improved compared to, for example, the case where the porosity of the second holes 42B is the same as that of the first holes 42A. Furthermore, compared to the case where, for example, the void ratio of the second hole 42B is the same as that of the first hole 42A, the warping of the semiconductor device 100 can be reduced.

[0095] (1-11) As shown in Figure 1, the inductor wiring 51 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. As shown in Figure 2, when the semiconductor device 100 is viewed through in the third negative direction ZB, the inductor wiring 51 does not overlap with the capacitor section 30. In other words, when the semiconductor device 100 is viewed through in the third positive direction ZA, the inductor wiring 51 does not overlap with the capacitor section 30. With the above configuration, for example, when the semiconductor device 100 is viewed through in the third positive direction ZA, the magnetic flux generated by the inductor wiring 51 is less likely to affect the capacitor section 30 compared to the case where the inductor wiring 51 overlaps with the capacitor section 30. As a result, changes in the characteristics of the first electrode layer 46, etc., due to the magnetic flux generated by the inductor wiring 51 can be suppressed.

[0096] (1-12) As shown in Figure 3, the workers perform the aluminum layer formation process S14 in the manufacture of the semiconductor device 100. Specifically, as shown in Figure 5, the workers form an intermediate body 41Z on the main surface 12ZA of the base substrate 12Z via an intermediate insulating layer 13Z and an intermediate barrier film 31Z. Furthermore, as shown in Figure 3, the workers perform the anodizing process S16. Specifically, as shown in Figure 6, the workers use the anodizing method to form an aluminum oxide body 41 having a plurality of holes 42 extending from the outer surface on the third positive direction ZA side to the third negative direction ZB side. Then, as shown in Figure 3, the workers perform the first electrode layer formation process S31. Specifically, as shown in Figure 7, the worker laminates the intermediate first electrode layer 46Z onto the outer surface of the aluminum oxide body 41 on the third positive direction ZA side, the inner surfaces of the multiple holes 42, the outer surface of the intermediate insulating layer 37Z on the third positive direction ZA side, and the outer surface of the intermediate barrier film 31Z on the third positive direction ZA side. Next, as shown in Figure 3, the worker performs the dielectric layer formation process S32. Specifically, as shown in Figure 7, the worker laminates the intermediate dielectric layer 48Z onto the outer surface of the intermediate first electrode layer 46Z opposite to the aluminum oxide body 41. Furthermore, as shown in Figure 3, the worker performs the second electrode layer formation process S33. Specifically, as shown in Figure 7, the worker laminates the intermediate second electrode layer 47Z onto the outer surface of the intermediate dielectric layer 48Z opposite to the intermediate first electrode layer 46Z. Also, as shown in Figure 3, the worker performs the etching process S35. Specifically, as shown in Figure 8, the worker forms the first portion 56 of the inductor wiring 51 from a part of the intermediate 41Z by etching step S35. Therefore, in this embodiment, etching step S35 functions as a first portion formation step that forms a part of the intermediate 41Z as the first portion 56 of the inductor wiring 51. Furthermore, as shown in Figure 3, the worker performs the copper layer formation step S53. Specifically, as shown in Figure 10, the worker forms the first columnar wiring 81 on the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. The worker also forms the second columnar wiring 82 on the outer surface of the second capacitor wiring layer 62 on the third positive direction ZA side.The worker forms the second portion 57 on the outer surface of the first portion 56 of the inductor wiring 51 on the third positive direction ZA side. Therefore, in this embodiment, the copper layer formation step S53 functions as a columnar wiring formation step that forms a first columnar wiring 81 that is electrically connected to the second electrode layer 47 of the capacitor portion 30 and extends toward the third positive direction ZA side relative to the second electrode layer 47. The copper layer formation step S53 also functions as a second portion formation step that forms the second portion 57 of the inductor wiring 51 on the outer surface of the first portion 56 of the inductor wiring 51 on the third positive direction ZA side.

[0097] According to the above configuration, by using the anodic oxidation method, an aluminum oxide body 41 containing multiple pores 42 can be formed in a simple manner from a part of the aluminum-based intermediate body 41Z. Furthermore, according to the above configuration, a first portion 56 is formed from a part of the aluminum-based intermediate body 41Z. Then, a second portion 57 is formed on the outer surface of the first portion 56 on the third negative direction ZB side. As a result, the dimensions of the inductor wiring 51 in the direction perpendicular to the first main surface 100A become larger than the dimensions of the capacitor portion 30 in the direction perpendicular to the first main surface 100A. Consequently, while manufacturing the semiconductor device 100 in a relatively simple manner, it is possible to suppress an increase in the dimensions of the semiconductor device 100 in the direction parallel to the first main surface 100A due to an increase in the capacitance value of the capacitor portion 30 or a decrease in the DC resistance of the inductor wiring 51.

[0098] (1-13) In the first electrode layer formation step S31, the workers deposit an intermediate first electrode layer 46Z by the ALD method, i.e., by atomic layer deposition. In the dielectric layer formation step S32, the workers deposit an intermediate dielectric layer 48Z by the ALD method, i.e., by atomic layer deposition. Furthermore, in the second electrode layer formation step S33, the workers deposit an intermediate second electrode layer 47Z by the ALD method, i.e., by atomic layer deposition. With the above configuration, since the intermediate first electrode layer 46Z, intermediate dielectric layer 48Z, and intermediate second electrode layer 47Z are deposited by atomic layer deposition, a homogeneous and thin first electrode layer 46, dielectric layer 48, and second electrode layer 47 can be formed more reliably.

[0099] <Second Embodiment> The second embodiment of the present disclosure will now be described with reference to Figure 13. The second embodiment differs in some aspects of its configuration from the first embodiment. Specifically, the semiconductor device 200 of the second embodiment differs in some aspects of the configuration of the base body 10. Also, the semiconductor device 200 of the second embodiment differs in some aspects of the configuration of the inductor section 50. The semiconductor device 200 of the second embodiment does not have a second capacitor wiring layer 62, a third connection section 88, or a fourth connection section 89. Furthermore, the semiconductor device 200 of the second embodiment has a positive side columnar wiring 281, a first negative side columnar wiring 282, and a second negative side columnar wiring 283 instead of the first columnar wiring 81 and the second columnar wiring 82. In the description of the second embodiment, the differences from the first embodiment will be the main focus, and components similar to those in the first embodiment will be denoted by the same reference numerals, and their descriptions will be omitted or simplified.

[0100] As shown in Figure 13, the base body 10 is equipped with a substrate 212 instead of a substrate 12. The dimensions of the substrate 212 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the substrate 12 in the direction perpendicular to the first main surface 100A. The material of the substrate 212 is silicon; that is, the substrate 212 contains silicon. The Young's modulus of the substrate 212 is greater than the Young's modulus of the insulator 14. Furthermore, the absolute value of the difference between the Young's modulus of the substrate 212 and the Young's modulus of the insulator 14 is greater than 100 GPa.

[0101] The inductor section 50 is equipped with inductor wiring 251 instead of inductor wiring 51 and barrier film 59. The inductor wiring 251 is in contact with the outer surface of the first insulating layer 13 on the third positive direction ZA side. The inductor wiring 251 extends parallel to the first main surface 100A so as to revolve around a pivot axis perpendicular to the first main surface 100A. The pivot axis of the inductor wiring 251 is parallel to the third axis Z. When the semiconductor device 200 is viewed through in the third negative direction ZB, the shape of the inductor wiring 251 is generally spiral-shaped. Specifically, when the semiconductor device 200 is viewed through in the third negative direction ZB, the inductor wiring 251 has a spiral shape such that the diameter decreases as it revolves clockwise.

[0102] In the following, the inner end of the inductor wiring 251 is referred to as the first end 251A, and the outer end of the inductor wiring 251 is referred to as the second end 251B.

[0103] As shown in Figure 13, the inductor wiring 251 extends from the first insulating layer 13 toward the third positive direction ZA. The outer surface of the inductor wiring 251 toward the third positive direction ZA is exposed on the outer surface of the insulator 14 toward the third positive direction ZA. The dimensions of the inductor wiring 251 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the capacitor portion 30 in the direction perpendicular to the first main surface 100A. An example of the material of the inductor wiring 251 is a metal mainly composed of copper.

[0104] The configuration of the positive-side columnar wiring 281 is the same as that of the first columnar wiring 81. That is, the positive-side columnar wiring 281 is located inside the insulator 14. In other words, in the third positive direction ZA, the insulator 14 is located in the same layer as the positive-side columnar wiring 281. Also, when viewing the semiconductor device 200 through the third positive direction ZA, the insulator 14 covers the periphery of the positive-side columnar wiring 281. The positive-side columnar wiring 281 is in contact with the outer surface of the first capacitor wiring layer 61 on the third positive direction ZA side. That is, the positive-side columnar wiring 281 is electrically connected to the second electrode layer 47 of the capacitor section 30 via the first capacitor wiring layer 61. The positive-side columnar wiring 281 extends from the first capacitor wiring layer 61 toward the third positive direction ZA. In other words, the positive columnar wiring 281 extends in a direction perpendicular to the first main surface 100A on the third positive direction ZA side relative to the capacitor section 30. The outer surface of the positive columnar wiring 281 on the third positive direction ZA side is exposed on the outer surface of the insulator 14 on the third positive direction ZA side. In this embodiment, the shape of the positive columnar wiring 281 is a tapered shape in which the outer diameter decreases as it approaches the third negative direction ZB side. An example of the material of the positive columnar wiring 281 is a metal mainly composed of copper.

[0105] The first negative columnar wiring 282 is located inside the substrate 212. In other words, in the third positive direction ZA, the substrate 212 is located in the same layer as the first negative columnar wiring 282. Also, when viewing the semiconductor device 200 through the third positive direction ZA, the substrate 212 covers the periphery of the first negative columnar wiring 282. The first negative columnar wiring 282 is in contact with the outer surface of the barrier film 31 of the capacitor portion 30 on the third negative direction ZB side. That is, the first negative columnar wiring 282 is electrically connected to the barrier film 31 of the capacitor portion 30. The first negative columnar wiring 282 extends from the barrier film 31 toward the third negative direction ZB. In other words, the first negative columnar wiring 282 extends in a direction perpendicular to the first main surface 100A on the third negative direction ZB side relative to the capacitor portion 30. The outer surface of the first negative columnar wiring 282 on the third negative direction ZB side is exposed on the outer surface of the substrate 212 on the third negative direction ZB side. An example of the material of the first negative columnar wiring 282 is a metal mainly composed of copper.

[0106] The second negative columnar wiring 283 is located inside the substrate 212. In other words, when viewing the semiconductor device 200 through the third positive direction ZA, the substrate 212 covers the periphery of the second negative columnar wiring 283. The second negative columnar wiring 283 is the second end 251B of the inductor wiring 251 and is in contact with the outer surface of the inductor wiring 251 on the third negative direction ZB side. That is, the second negative columnar wiring 283 is electrically connected to the inductor wiring 251. The second negative columnar wiring 283 extends from the inductor wiring 251 toward the third negative direction ZB. In other words, the second negative columnar wiring 283 extends relative to the inductor wiring 251 in a direction perpendicular to the first main surface 100A on the third negative direction ZB side. The outer surface of the second negative columnar wiring 283 on the third negative direction ZB side is exposed on the outer surface of the substrate 212 on the third negative direction ZB side. An example of the material of the second negative columnar wiring 283 is a metal mainly composed of copper.

[0107] As shown in Figure 13, the semiconductor device 200 is equipped with a first connection part 286, a second connection part 287, a first terminal 291, and a second terminal 292 instead of the first connection part 86, a second connection part 87, a third connection part 88, a fourth connection part 89, a first terminal 91, a second terminal 92, and a third terminal 93.

[0108] The configuration of the first connection portion 286 is the same as that of the first connection portion 86. That is, the first connection portion 286 is located inside the second insulating layer 15. The first connection portion 286 is in contact with the outer surface of the positive columnar wiring 281 on the third positive direction ZA side. The first connection portion 286 extends from the positive columnar wiring 281 toward the third positive direction ZA. The outer surface of the first connection portion 286 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the first connection portion 286 is a metal mainly composed of copper.

[0109] The second connection portion 287 is located inside the second insulating layer 15. The second connection portion 287 is the first end 251A of the inductor wiring 251 and is in contact with the outer surface of the inductor wiring 251 on the third positive direction ZA side. The second connection portion 287 extends from the inductor wiring 251 toward the third positive direction ZA. The outer surface of the second connection portion 287 on the third positive direction ZA side is exposed on the outer surface of the second insulating layer 15 on the third positive direction ZA side. An example of the material of the second connection portion 287 is a metal mainly composed of copper.

[0110] The first terminal 291 is in contact with the outer surface of the first connection portion 286 on the third positive direction ZA side and the outer surface of the second insulating layer 15 on the third positive direction ZA side. That is, the first terminal 291 is formed on the third positive direction ZA side with respect to the second insulating layer 15. The first terminal 291 is also electrically connected to the positive side columnar wiring 281 via the first connection portion 286. The shape of the first terminal 291 is generally rectangular plate-like. The dimensions of the first terminal 291 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the second insulating layer 15 in the direction perpendicular to the first main surface 100A. An example of the material of the first terminal 291 is a metal mainly composed of copper. In this embodiment, the second insulating layer 15 is an insulating layer formed on the third positive direction ZA side with respect to the insulator 14. The first terminal 291 is an external terminal formed on the third positive direction ZA side with respect to the insulating layer.

[0111] The second terminal 292 is in contact with the outer surface of the second connection portion 287 on the third positive direction ZA side and the outer surface of the second insulating layer 15 on the third positive direction ZA side. That is, the second terminal 292 is electrically connected to the second connection portion 287. The shape of the second terminal 292 is generally rectangular. The dimensions of the second terminal 292 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the second insulating layer 15 in the direction perpendicular to the first main surface 100A. An example of the material of the second terminal 292 is a metal mainly composed of copper.

[0112] <Effects of this embodiment> In this embodiment, in addition to the effects of (1-1) to (1-4) and (1-7) to (1-11) described above, the following effects of (2-1) to (2-6) are achieved.

[0113] (2-1) As shown in Figure 13, the semiconductor device 200 includes a positive columnar wiring 281 and a first negative columnar wiring 282. The positive columnar wiring 281 is electrically connected to the second electrode layer 47 of the capacitor section 30 via the first capacitor wiring layer 61. The positive columnar wiring 281 extends in a direction perpendicular to the first main surface 100A on the third positive direction ZA side relative to the capacitor section 30. The first negative columnar wiring 282 is electrically connected to the barrier film 31 of the capacitor section 30. The first negative columnar wiring 282 extends in a direction perpendicular to the first main surface 100A on the third negative direction ZB side relative to the capacitor section 30. Here, for example, when the semiconductor device 200 is mounted, the first electronic component is located on the third positive direction ZA side relative to the semiconductor device 200, and the second electronic component is located on the third negative direction ZB side relative to the semiconductor device 200. Even if such a situation occurs, the semiconductor device 200 described above can supply power from one of the first electronic component and the second electronic component to the other via the positive side columnar wiring 281 and the first negative side columnar wiring 282.

[0114] (2-2) As shown in Figure 13, the base body 10 comprises an insulator 14 and a substrate 212. When the semiconductor device 200 is viewed through with the third positive direction ZA facing forward, the insulator 14 covers the periphery of the positive side columnar wiring 281. When the semiconductor device 200 is viewed through with the third positive direction ZA facing forward, the substrate 212 covers the periphery of the first negative side columnar wiring 282. The Young's modulus of the substrate 212 is greater than that of the insulator 14. Also, the absolute value of the difference between the Young's modulus of the substrate 212 and the Young's modulus of the insulator 14 is greater than 100 GPa. With the above configuration, the Young's modulus of the substrate 212 is considerably larger than that of the insulator 14. Therefore, deformation of the semiconductor device 200 can be suppressed compared to, for example, the case where the Young's modulus of the substrate 212 is the same as that of the insulator 14.

[0115] (2-3) The substrate 212 contains silicon. With the above configuration, it is possible to suppress the absolute value of the difference between the coefficient of thermal expansion of the substrate 212 of the semiconductor device 200 and the coefficient of thermal expansion of other electronic components containing silicon from becoming excessively large. This makes it possible to suppress variations in stress throughout the entire system, for example, which includes the semiconductor device 200 and other electronic components.

[0116] (2-4) As shown in Figure 13, the semiconductor device 200 includes a first negative columnar wiring 282 and a second negative columnar wiring 283. The second negative columnar wiring 283 is electrically connected to the inductor wiring 251. The second negative columnar wiring 283 extends in a direction perpendicular to the first main surface 100A on the third negative direction ZB side relative to the inductor wiring 251. With the above configuration, the semiconductor device 200 has a second negative columnar wiring 283 for the inductor wiring 251, separate from the first negative columnar wiring 282 for the capacitor section 30. Therefore, compared to, for example, a case where the semiconductor device 200 has one common columnar wiring that is electrically connected to the capacitor section 30 and the inductor wiring 251 instead of the first negative columnar wiring 282 and the second negative columnar wiring 283, the design freedom of the semiconductor device 200 is easier to improve.

[0117] (2-5) The material of the inductor wiring 251 is a metal mainly composed of copper. With the above configuration, for example, compared to the case in which a metal mainly composed of aluminum is used as the material of the inductor wiring 251, it is expected that the manufacturing cost of the inductor wiring 251 can be reduced.

[0118] (2-6) As shown in Figure 13, the semiconductor device 200 is provided with a first terminal 291. The first terminal 291 is formed on the third positive direction ZA side with respect to the second insulating layer 15. The first terminal 291 is electrically connected to the positive side columnar wiring 281 via a first connection part 286. The dimensions of the first terminal 291 in the direction perpendicular to the first main surface 100A are larger than the dimensions of the second insulating layer 15 in the direction perpendicular to the first main surface 100A. With the above configuration, for example, the irregularities on the outer surface of the semiconductor device 200 on the third positive direction ZA side are larger compared to the case where the dimensions of the first terminal 291 are the same as the dimensions of the second insulating layer 15. This makes it easier to detect the position of the first terminal 291 based on the size of the irregularities at the time of manufacturing the semiconductor device 200.

[0119] <Examples of Modifications> This embodiment can be implemented with the following modifications. This embodiment and the following examples of modifications can be combined with each other to the extent that they do not contradict each other technically.

[0120] In the first embodiment described above, the configuration of the base body 10 may be changed. For example, the dimensions of the insulator 14 in the direction perpendicular to the first main surface 100A may be less than or equal to the dimensions of the substrate 12 in the direction perpendicular to the first main surface 100A. Specifically, if there is little need to protect the aluminum oxide body 41 with the insulator 14, the above configuration may be adopted.

[0121] For example, the material of the insulator 14 may be changed. In other words, the insulator 14 does not have to contain organic compounds. Specifically, if there is little need to increase the flexibility of the insulator 14, the above configuration may be adopted.

[0122] For example, the effective relative permeability of the insulator 14 may be 1 or less. Specifically, if there is little need to improve the inductance of the inductor section 50, the above configuration may be adopted.

[0123] For example, the outer surface of the aluminum oxide body 41 may be exposed on the outer surface of the insulator 14. Specifically, if there is little need to protect the aluminum oxide body 41 with the insulator 14, the above configuration may be adopted.

[0124] - In the first embodiment described above, the configuration of the capacitor portion 30 may be changed. For example, when the semiconductor device 100 is viewed through with the third positive direction ZA facing upwards, the multiple second holes 42B do not have to be located outward relative to the multiple first holes 42A. Specifically, if there is little need to improve the flexibility of the capacitor portion 30, the above configuration may be adopted.

[0125] ・In the first embodiment described above, the configuration of the inductor section 50 may be changed. For example, the inductor wiring 51 does not have to extend so as to revolve around a pivot axis perpendicular to the first main surface 100A. That is, the pivot axis of the inductor wiring 51 may be inclined with respect to the third axis Z. In this case, when the semiconductor device 100 is viewed through in a direction parallel to the pivot axis of the inductor wiring 51, the inductor wiring 51 may overlap with the capacitor section 30. As a specific example, the above configuration may be adopted if it is acceptable to allow for the possibility that the characteristics of the first electrode layer 46, etc., may change due to the magnetic flux generated in the inductor wiring 51.

[0126] ・For example, the shape of the inductor wiring 51 may be changed. Specifically, the width dimensions of the first portion 56 and the second portion 57 of the inductor wiring 51 do not have to be the same. As an example, the shape of the inductor wiring 51 may be configured as follows: The width dimension of the first portion 56 is constant. The width dimension of the end of the third negative direction ZB in the second portion 57 is the same as the width dimension of the first portion 56. The width dimension of the second portion 57 increases as you move from the third negative direction ZB toward the third positive direction ZA. With the above configuration, for example, compared to the case where the width dimension of the second portion 57 is constant, in a cross-sectional view as shown in Figure 1, the shape of the second portion 57 is closer to the shape of the first columnar wiring 81 and the second columnar wiring 82. Therefore, in the copper layer formation process S53, workers can easily form the second portion 57 in the same manner as the first columnar wiring 81 and the second columnar wiring 82. This makes it easier to simplify the manufacturing process of the semiconductor device 100. Furthermore, with the above configuration, the DC resistance of the inductor wiring 51 can be suppressed compared to, for example, the case where the entire width dimension of the second portion 57 is the same as the width dimension of the first portion 56.

[0127] For example, the material of the inductor wiring 51 may be changed. For example, the material of the first part 56 of the inductor wiring 51 may be a metal mainly composed of copper. For example, the material of the second part 57 of the inductor wiring 51 may be a metal mainly composed of aluminum. In the above configuration, the conductivity of the material of the second part 57 may be the same as that of the material of the first part 56, or the conductivity of the material of the second part 57 may be lower than that of the material of the first part 56. In other words, the material of the inductor wiring 51 can be changed based on the performance required of the inductor wiring 51.

[0128] For example, the relationship between the first portion 56 and the second portion 57 of the inductor wiring 51 may be changed. Specifically, the dimensions of the second portion 57 of the inductor wiring 51 in a direction perpendicular to the first main surface 100A may be less than or equal to the dimensions of the first portion 56 of the inductor wiring 51 in a direction perpendicular to the first main surface 100A.

[0129] For example, the dimensions of the inductor portion 50 in the direction perpendicular to the first main surface 100A may differ from the dimensions of the capacitor portion 30 and the first columnar wiring 81 in the direction perpendicular to the first main surface 100A. Specifically, if it is acceptable to make the structure of the semiconductor device 100 more complex, the above configuration may be adopted.

[0130] In the first embodiment described above, other configurations of the semiconductor device 100 may be changed. For example, the minimum width dimension 81W of the first columnar wiring 81 may be less than 100 times the inner diameter 42D of the hole 42 of the capacitor portion 30. Specifically, if the capacitance value of the capacitor portion 30 is sufficiently large, the above configuration may be adopted.

[0131] - In the first embodiment described above, the method for manufacturing the semiconductor device 100 may be changed. For example, in the first electrode layer formation step S31, the operator may laminate the intermediate first electrode layer 46Z using a method other than the ALD method. Similarly, in the dielectric layer formation step S32 and the second electrode layer formation step S33, the operator may change the method for forming the intermediate dielectric layer 48Z and the intermediate second electrode layer 47Z.

[0132] In the second embodiment described above, the configuration of the base body 10 may be changed. For example, the material of the substrate 212 may be changed. For example, the substrate 212 does not have to contain silicon. Specifically, if other electronic components surrounding the semiconductor device 200 do not contain silicon, then there is little need for the substrate 212 to contain silicon.

[0133] For example, the relationship between the Young's moduli of the substrate 212 and the insulator 14 may be changed. For example, the absolute value of the difference between the Young's moduli of the substrate 212 and the Young's moduli of the insulator 14 may be 100 GPa or less. Also, for example, the Young's moduli of the substrate 212 may be less than or equal to the Young's moduli of the insulator 14. Specifically, if the Young's moduli of the insulator 14 is relatively large, the above configuration may be adopted.

[0134] In the second embodiment described above, other configurations of the semiconductor device 200 may be changed. For example, the dimensions of the first terminal 291 in the direction perpendicular to the first main surface 100A may be less than or equal to the dimensions of the second insulating layer 15 in the direction perpendicular to the first main surface 100A. Specifically, if there is little need for the unevenness of the outer surface on the third positive direction ZA side of the semiconductor device 200 to be large, the above configuration may be adopted.

[0135] For example, the semiconductor device 200 may have a common columnar wiring instead of the first negative columnar wiring 282 and the second negative columnar wiring 283. This common columnar wiring only needs to be electrically connected to the barrier film 31 of the capacitor section 30 and electrically connected to the inductor wiring 251 of the inductor section 50. Furthermore, the common columnar wiring only needs to extend in a direction perpendicular to the first main surface 100A on the third negative direction ZB side relative to the capacitor section 30 and the inductor section 50. As a specific example, if there is little need to improve the design flexibility of the semiconductor device 200, the above configuration may be adopted.

[0136] - In the second embodiment described above, the method for manufacturing the semiconductor device 200 may be changed. As a premise, in the second embodiment, the material of the inductor wiring 251 is a metal mainly composed of copper. In other words, the material of the inductor wiring 251 is different from the material of the wiring body 32, the shield body 35, the aluminum oxide body 41, etc. In such a case, in the aluminum layer formation step S14, the worker only needs to form an intermediate body 41Z which consists only of the wiring body 32, the shield body 35, and the aluminum oxide body 41. That is, the method for manufacturing the semiconductor device 200 may be changed as appropriate to match the configuration of the semiconductor device 200.

[0137] 10...Base body 12...Substrate 13...First insulating layer 14...Insulator 15...Second insulating layer 30...Capacitor section 31...Barrier film 32...Wiring section 35...Shielding section 37...Insulating layer 41...Aluminum oxide body 42...Hole 42A...First hole 42B...Second hole 42D...Inner diameter 46...First electrode layer 47...Second electrode layer 48...Dielectric layer 50...Inductor section 51...Inductor wiring 59...Barrier film 61...First capacitor wiring layer 62...Second capacitor wiring layer 81...First columnar wiring 82...Second columnar wiring 86...First connection section 87...Second connection section 88...Third connection section 89...Fourth connection section 91...First terminal 92...Second terminal 93...Third terminal 100...Semiconductor device 100A...First main surface 100B...Second main surface

Claims

1. A substrate having a planar main surface; a capacitor portion located inside the substrate; an inductor portion located inside the substrate and having a portion of it located on the same layer as the capacitor portion in a direction perpendicular to the main surface; a columnar wiring located inside the substrate, extending in a direction perpendicular to the main surface, and electrically connected to the capacitor portion; wherein a specific direction perpendicular to the main surface is defined as the positive direction, and the direction opposite to the positive direction is defined as the negative direction; the capacitor portion comprises: an aluminum oxide body having a plurality of holes extending from the outer surface on the positive direction side to the negative direction side; a first electrode layer laminated on the outer surface on the positive direction side of the aluminum oxide body and on the inner surfaces of the plurality of holes; a dielectric layer laminated on the side opposite to the aluminum oxide body relative to the first electrode layer; and a second electrode layer laminated on the side opposite to the first electrode layer relative to the dielectric layer; the inductor portion comprises inductor wiring extending parallel to the main surface. A semiconductor device in which the dimensions of the inductor wiring in a direction perpendicular to the main surface are greater than the dimensions of the capacitor portion in a direction perpendicular to the main surface.

2. The semiconductor device according to claim 1, wherein the dimensions of the inductor portion in a direction perpendicular to the main surface are the same as the dimensions of the capacitor portion and the columnar wiring in a direction perpendicular to the main surface.

3. The semiconductor device according to claim 1 or claim 2, wherein the minimum width dimension of the columnar wiring is 100 times or more the inner diameter of the hole.

4. The semiconductor device according to any one of claims 1 to 3, wherein the columnar wiring is a positive columnar wiring, the positive columnar wiring extends in a direction perpendicular to the main surface on the positive side with respect to the capacitor portion, is electrically connected to the capacitor portion, and is further provided with a negative columnar wiring that extends in a direction perpendicular to the main surface on the negative side with respect to the capacitor portion.

5. The semiconductor device according to claim 4, wherein the element comprises an insulator located in the same layer as the positive columnar wiring in a direction perpendicular to the main surface and covering the periphery of the positive columnar wiring when viewed through in the positive direction, and a substrate containing silicon, located in the same layer as the negative columnar wiring in a direction perpendicular to the main surface and covering the periphery of the negative columnar wiring when viewed through in the positive direction, wherein the Young's modulus of the substrate is greater than the Young's modulus of the insulator, and the absolute value of the difference between the Young's modulus of the substrate and the Young's modulus of the insulator is greater than 100 GPa.

6. The semiconductor device according to claim 4 or 5, wherein the negative columnar wiring is designated as the first negative columnar wiring, and further comprises a second negative columnar wiring that is electrically connected to the inductor wiring and extends in the negative direction relative to the inductor wiring.

7. The semiconductor device according to any one of claims 1 to 6, wherein the inductor wiring extends parallel to the main surface so as to revolve around a pivot axis perpendicular to the main surface, and the portion of the inductor wiring that is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface is designated as a first portion, and the portion that is not located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface is designated as a second portion, the dimensions of the second portion in the direction perpendicular to the main surface being greater than the dimensions of the first portion in the direction perpendicular to the main surface.

8. The semiconductor device according to any one of claims 1 to 7, wherein the inductor wiring extends parallel to the main surface so as to revolve around a pivot axis perpendicular to the main surface, and the portion of the inductor wiring that is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface is designated as a first portion, and the portion that is not located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface is designated as a second portion, and the conductivity of the material of the second portion is higher than that of the material of the first portion.

9. The semiconductor device according to any one of claims 1 to 8, wherein the inductor wiring extends parallel to the main surface so as to revolve around a pivot axis perpendicular to the main surface, and when the portion of the inductor wiring that is located in the same layer as the aluminum oxide body in a direction perpendicular to the main surface is defined as the first portion, the material of the first portion is mainly composed of aluminum.

10. The semiconductor device according to any one of claims 1 to 9, wherein the material of the inductor wiring is mainly composed of copper.

11. The semiconductor device according to any one of claims 1 to 10, wherein the element comprises an organic compound and an insulator covering the outer surface of the aluminum oxide body.

12. The semiconductor device according to claim 11, wherein the element comprises a substrate containing silicon and located on the negative side with respect to the insulator, and the dimensions of the insulator in a direction perpendicular to the main surface are greater than the dimensions of the substrate in a direction perpendicular to the main surface.

13. The semiconductor device according to claim 11 or 12, wherein the element comprises an insulating layer formed on the positive side with respect to the insulator, is electrically connected to the columnar wiring, and comprises an external terminal formed on the positive side with respect to the insulating layer, wherein the dimensions of the external terminal in a direction perpendicular to the main surface are greater than the dimensions of the insulating layer in a direction perpendicular to the main surface.

14. The semiconductor device according to any one of claims 11 to 13, wherein the effective relative permeability of at least a portion of the insulator is greater than 1.

15. A semiconductor device according to any one of claims 1 to 14, wherein, among the holes, those on which the first electrode layer is laminated on the inner surface are designated as first holes, and those on which the first electrode layer is not laminated on the inner surface are designated as second holes, and when viewed through in the forward direction, the plurality of second holes are located outward relative to the plurality of first holes.

16. The semiconductor device according to any one of claims 1 to 15, wherein, when viewed through the forward direction, the inductor wiring does not overlap with the capacitor portion.

17. An aluminum layer formation step of forming an intermediate mainly composed of aluminum on the main surface of a base substrate; an anodic oxidation step, performed after the aluminum layer formation step, in which a portion of the intermediate is converted into an aluminum oxide body having a plurality of holes extending from the outer surface on the positive side to the negative side, with the direction perpendicular to the main surface being defined as the positive direction and the opposite direction as the negative direction; a first electrode layer formation step, performed after the anodic oxidation step, in which a first electrode layer is laminated on the outer surface on the positive side and the inner surfaces of the plurality of holes of the aluminum oxide body; a dielectric layer formation step, performed after the first electrode layer formation step, in which a dielectric layer is laminated on the side of the first electrode layer opposite to the aluminum oxide body; and a second electrode layer formation step, performed after the dielectric layer formation step, in which a second electrode layer is laminated on the side of the dielectric layer opposite to the first electrode layer. A method for manufacturing a semiconductor device, comprising: a columnar wiring formation step, which is performed after the second electrode layer formation step, to form columnar wiring that is electrically connected to the second electrode layer and extends toward the positive direction relative to the second electrode layer; a first part formation step, which is performed after the aluminum layer formation step, to form a part of the intermediate as a first part of inductor wiring; and a second part formation step, which is performed after the first part formation step, to form a second part of the inductor wiring on the positive-direction outer surface of the first part.

18. The method for manufacturing a semiconductor device according to claim 17, wherein in the first electrode layer formation step, the first electrode layer is stacked by atomic layer deposition; in the dielectric layer formation step, the dielectric layer is stacked by atomic layer deposition; and in the second electrode layer formation step, the second electrode layer is stacked by atomic layer deposition.

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