Radiation-emitting semiconductor component and method for producing a radiation-emitting semiconductor component

Abstract

The invention relates to a radiation-emitting semiconductor component (1) having a support (12) and a radiation-emitting semiconductor layer sequence (2) which is provided on the support (12). The semiconductor layer sequence (2) has an active layer (7) for generating electromagnetic radiation, a radiation exit face (2a) facing away from the support (12), a lower face (2b) facing the support (12), and at least one flank (6) extending from the radiation exit face (2a) to the lower face (2b). The semiconductor layer sequence (2) widens from the lower face (2b) to the radiation exit face (2a), and the semiconductor layer sequence (2) is provided with at least one reflective surface (10), which reflects the electromagnetic radiation, on the flank (6) and on the lower face (2b). The radiation-emitting semiconductor component (1) is a micro-LED in particular. The invention further relates to a method for producing a radiation-emitting semiconductor component.

Description

[0001] 2024PF01192 December 12, 2025

[0002] P2024, 0905 WO N

[0003] 1

[0004] Description

[0005] Radiation-emitting semiconductor component and method for manufacturing a radiation-emitting semiconductor component

[0006] A radiation-emitting semiconductor device is described. Furthermore, a method for fabricating a radiation-emitting semiconductor device is described.

[0007] One task to be solved is to specify a radiation-emitting semiconductor device that exhibits increased light extraction.

[0008] Another task to be solved is to specify a method for manufacturing such a radiation-emitting semiconductor device.

[0009] According to at least one embodiment, the radiation-emitting semiconductor device comprises a carrier.

[0010] The beam can have a principal extension plane. The principal extension plane of the beam runs, for example, parallel to a surface, such as a top surface, of the beam. A stacking direction runs transversely or perpendicular to the principal extension plane.

[0011] The substrate can, for example, contain silicon.

[0012] Alternatively or additionally, the support can be made of or containing silicon, germanium, aluminum nitride, or silicon nitride (Si, Ge, Ain, SiN). 2024PF01192 December 12, 2025

[0013] P2024, 0905 WO N

[0014] - 2 - The support can be designed to be mechanically load-bearing. The support serves in particular to increase the mechanical stability of a semiconductor layer sequence. Specifically, the support can be the mechanically load-bearing component of the semiconductor device.

[0015] According to at least one embodiment, the radiation-emitting semiconductor device comprises a radiation-emitting semiconductor layer sequence. The radiation-emitting semiconductor layer sequence is arranged on the substrate. The radiation-emitting semiconductor layer sequence is, for example, arranged on the top surface of the substrate. The semiconductor layer sequence is, in particular, epitaxially produced. In this case, it is especially possible that the substrate does not form a growth substrate for the semiconductor layer sequence, but is mechanically and electrically connected to it after the semiconductor layer sequence has been fabricated.

[0016] According to at least one embodiment of the radiation-emitting semiconductor device, the radiation-emitting semiconductor device comprises an active layer located between a first doped layer and a second doped layer of the radiation-emitting semiconductor layer sequence. The active layer can be configured to generate electromagnetic radiation. For example, the radiation-emitting semiconductor layer sequence can radiate, emit, and / or generate electromagnetic radiation in the infrared range. Alternatively or additionally, the radiation-emitting semiconductor layer sequence can be configured to generate electromagnetic radiation. 2024PF01192 December 12, 2025

[0017] P2024, 0905 WO N

[0018] - 3 - Radiation in a different wavelength range, for example in the visible range.

[0019] According to at least one embodiment of the radiation-emitting semiconductor device, the semiconductor layer sequence has a radiation-emitting side facing away from the substrate, a bottom surface facing the substrate, and at least one flank extending from the radiation-emitting side to the bottom surface. The semiconductor layer sequence widens from the bottom surface towards the radiation-emitting side. This means, for example, that the cross-sectional area of ​​the semiconductor layer sequence for a cross-section parallel to the principal plane of extension increases with increasing distance from the bottom surface.

[0020] According to at least one embodiment of the radiation-emitting semiconductor device, the semiconductor layer sequence widens from the underside towards the radiation-emitting side. The radiation-emitting semiconductor layer sequence has a cross-sectional area that increases towards the radiation-emitting side.

[0021] According to at least one embodiment of the radiation-emitting semiconductor device, the semiconductor layer sequence is provided on the flank and on the underside with at least one reflective coating that reflects electromagnetic radiation. The reflective coating is specifically designed to reflect the electromagnetic radiation generated in the active layer during operation. The reflective coating can have a thickness of at least 20 nm, for example, at least 50 nm. 2024PF01192 December 12, 2025

[0022] P2024, 0905 WO N

[0023] 4

[0024] For example, the reflective layer can have a thickness of at least 1 pm.

[0025] According to at least one embodiment, a radiation-emitting semiconductor device is specified comprising a support and a radiation-emitting semiconductor layer sequence arranged on the support, wherein

[0026] - the semiconductor layer sequence has an active layer for generating electromagnetic radiation, a radiation emission side facing away from the support, a bottom side facing the support and at least one flank extending from the radiation emission side to the bottom side,

[0027] - the semiconductor layer sequence widens from the underside towards the radiation exit side and

[0028] - the semiconductor layer sequence on the flank and on the underside is provided with at least one mirrored coating that reflects electromagnetic radiation.

[0029] The radiation-emitting semiconductor device described here is based, among other things, on the idea that the semiconductor layer sequence widens from the underside towards the radiation-emitting side. This improves light extraction. The improved light extraction also increases the absolute brightness.

[0030] Alternatively, it would be possible to design the flank of the semiconductor layer sequence in such a way that the semiconductor layer sequence narrows from the underside towards the radiation-emitting side. Coating the flank with a reflective material is technically difficult in this case. If the flanks were nevertheless reflective, then 2024PF01192 December 12, 2025

[0031] P2024, 0905 WO N

[0032] 5

[0033] The electromagnetic radiation would be reflected towards the active layer due to the angle of the flank.

[0034] According to at least one embodiment of the radiation-emitting semiconductor device, the flank forms an acute angle with the upper surface of the substrate facing the semiconductor layer sequence. This angle can be, for example, between 40° and 50° inclusive, or, within the manufacturing tolerance, 45°. In particular, the angle can also be less than 40°. This allows for the advantageous use of total internal reflection at the flank.

[0035] According to at least one embodiment of the radiation-emitting semiconductor device, the mirror coating surrounds the semiconductor layer sequence laterally.

[0036] For example, the reflective coating completely surrounds the semiconductor layer sequence laterally. This means that in this case, the reflective coating completely covers the flank, leaving no uncovered areas of the semiconductor layer sequence on the flank.

[0037] According to at least one embodiment of the radiation-emitting semiconductor device, the reflective coating extends seamlessly from the flank to the underside. This seamless coating ensures optimal surface coverage on the outer surface of the semiconductor layer sequence. This can mean that there is no gap between the reflective coating on the flank and the reflective coating on the underside. One advantage is that a particularly large portion of the surface area is thus covered. (2024PF01192, December 12, 2025)

[0038] P2024, 0905 WO N

[0039] 6

[0040] The electromagnetic radiation generated by the active layer is reflected by the mirror coating.

[0041] According to at least one embodiment of the radiation-emitting semiconductor device, the mirror coating comprises at least a first and a second mirror layer, wherein the first mirror layer is a dielectric mirror and the second mirror layer is a metallic mirror. An intermediate layer may also be arranged between the first and second mirror layers. With such a multilayered structure of the mirror coating, its

[0042] The reflectivity for the electromagnetic radiation generated in the active layer must be particularly high, so that a reflectance of 95%, 99% or more is achieved.

[0043] According to at least one embodiment of the radiation-emitting semiconductor device, the first reflective layer is directly adjacent to the semiconductor layer sequence. This first reflective layer is, for example, a dielectric mirror, such as a DBR mirror. The deposition of the DBR mirror onto the semiconductor layer sequence can be achieved by molecular beam epitaxy (MBE) and / or chemical vapor deposition (CVD). Alternating layers with high and low refractive indices can be precisely deposited to generate constructive interference.

[0044] According to at least one embodiment of the radiation-emitting semiconductor device, the intermediate layer is arranged between the first mirror layer and the second mirror layer and borders directly on both mirror layers. 2024PF01192 December 12, 2025

[0045] P2024, 0905 WO N

[0046] - 7 -

[0047] According to at least one embodiment of the radiation-emitting semiconductor device, the first reflective layer is a dielectric mirror, for example, a distributed Bragg reflector (DBR). A DBR has low optical loss and high reflectivity, making it ideal for applications requiring the selective reflection of specific wavelengths. The intermediate layer can, for example, comprise an aluminum oxide, such as Al₂O₃, which can serve for insulation and heat dissipation, among other purposes. The second reflective layer may consist of metals such as Ag, Ti, Pt, and / or TiW. Metallic reflective layers have the advantage of reflecting light at any angle and polarization. In particular, electromagnetic radiation striking the dielectric mirror at an unfavorable angle can still be reflected by the second, metallic reflective layer.

[0048] According to at least one embodiment of the radiation-emitting semiconductor device, the reflective coating covers at least 60% of the outer surface of the semiconductor layer sequence. This improves the light extraction and directionality of the electromagnetic radiation emitted by the semiconductor device. The improved light extraction also increases the absolute brightness.

[0049] According to at least one embodiment of the radiation-emitting semiconductor device, the mirrored surface on the underside has at least one opening through which the semiconductor layer sequence can be electrically contacted. The first opening is, if possible, 2024PF01192 12 December 2025

[0050] P2024, 0905 WO N

[0051] - 8 -small, so that on the one hand good electrical contact is ensured, but on the other hand as large a part as possible of the outer surface of the semiconductor layer sequence remains covered by the mirror coating .

[0052] According to at least one embodiment of the radiation-emitting semiconductor device, a contact layer with a plurality of secondary openings is applied to the semiconductor layer sequence at the radiation-emitting side. In particular, the contact layer is an n-contact layer. In other words, the contact layer is preferably designed to connect an n-doped region of the semiconductor layer sequence of the semiconductor device. For example, the contact layer is arranged on the radiation-emitting side of the semiconductor device facing away from the support. The contact layer is particularly electrically conductive and serves to expand the current.

[0053] The second openings allow electromagnetic radiation generated in the active layer to exit the semiconductor device. Furthermore, the contact layer can serve as a mechanically stable and electrically conductive contact surface for potential bonding. Designing the contact layer as an n-contact layer enables advantageous scaling of the semiconductor device to G-shaped surfaces up to several square millimeters. This expands the potential application range of the semiconductor device to larger LED chips.

[0054] According to at least one embodiment of the radiation-emitting semiconductor device, the 2024PF01192 is dated December 12, 2025.

[0055] P2024, 0905 WO N

[0056] - 9 - radiation-emitting semiconductor device free of a growth substrate. That is, the growth substrate of the semiconductor layer sequence has been removed and is no longer present in the semiconductor device.

[0057] According to at least one embodiment of the radiation-emitting semiconductor device, the radiation-emitting semiconductor device is a micro-LED. The micro-LED is characterized by particularly small lateral dimensions. For example, the radiation-emitting side of the semiconductor device has an extent of at most 100 pm or preferably at most 70 pm. In particular, for rectangular micro-LEDs, an edge length of at most 70 pm or preferably at most 50 pm is frequently achieved when viewed from above the layers of the layer stack. Furthermore, the height of the semiconductor device can be in the range of 1.5 pm to 10 pm.

[0058] In the literature you will find various spellings for micro-LED, e.g. . pLED, p-LED, uLED, u-LED or Micro Light Emitting Diode .

[0059] Furthermore, a method for fabricating a radiation-emitting semiconductor device is disclosed. The radiation-emitting semiconductor device is preferably fabricable using a method described herein. In other words, all features disclosed for the radiation-emitting semiconductor device are also disclosed for the method for fabricating a radiation-emitting semiconductor device, and vice versa. 2024PF01192 December 12, 2025

[0060] P2024, 0905 WO N

[0061] - 10 - According to at least one embodiment of the process, a growth substrate is first provided. The growth substrate is, in particular, a GaAs substrate. GaAs enables the epitaxial growth of semiconductor layer sequences with a precise crystal structure.

[0062] In particular, the semiconductor layer sequence is epitaxially grown on a growth substrate along a growth direction. The growth proceeds transversely or perpendicularly to the principal extension plane of the support.

[0063] The semiconductor layer sequence is preferably based on a III-V compound semiconductor material. Particularly preferably, the semiconductor layer sequence is based on the phosphide material system AlInGaAsP. The semiconductor layer sequence can comprise materials such as Al, In, Ga, As, and / or P. It can also include dopants and additional components. For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence, i.e., Al, In, Ga, As, and / or P, are specified, even though these may be partially replaced and / or supplemented by small amounts of other substances.

[0064] As an alternative to AlInGaAsP or AlInGaP, the semiconductor layer sequence can also be based on AlInGaN or AlInGaAs. The following explanations for AlInGaAsP or AlInGaP can apply accordingly to AlInGaN or AlInGaAs, where P is then replaced by N or As, respectively. In this case, other growth substrates, for example, a growth substrate formed with silicon or sapphire, can be used. 2024PF01192 December 12, 2025

[0065] P2024, 0905 WO N

[0066] - 11 - According to at least one embodiment of the method for manufacturing a radiation-emitting semiconductor device, the edge is generated before the semiconductor layer sequence is applied to the substrate.

[0067] The flank forms an angle with the substrate, for example. The formation of the flank can occur, for example, during an etching process. Alternatively or additionally, the angle can be set using optimized photolithography, for example, "grayscale lithography".

[0068] According to at least one embodiment of the process for manufacturing a radiation-emitting semiconductor device, the growth substrate is removed after being deposited, for example by bonding, onto the substrate. The growth substrate can be removed using a suitable technique such as laser lift-off, etching, or grinding.

[0069] According to at least one embodiment of the process for fabricating a radiation-emitting semiconductor device, the process is carried out for a large number of further radiation-emitting semiconductor devices on the substrate, and the substrate is subsequently cut to produce a large number of semiconductor devices. Any remaining parts of the reflective layer connecting the individual semiconductor layer sequences can then be removed by etching or grinding. Each further radiation-emitting semiconductor device can have the same features as the radiation-emitting semiconductor device. One idea behind this embodiment is to fabricate a large number of radiation-emitting semiconductor devices particularly efficiently. Ein2024PF01192 December 12, 2025

[0070] P2024, 0905 WO N

[0071] - 12 - The advantage is that a large number of radiation-emitting semiconductor devices can be manufactured in parallel.

[0072] According to at least one embodiment of the process for manufacturing a radiation-emitting semiconductor device, the mirroring is produced before the device is applied to the substrate.

[0073] The following section provides a more detailed explanation of the radiation-emitting semiconductor device and the method for manufacturing the radiation-emitting semiconductor device described here, in conjunction with exemplary embodiments and the associated figures.

[0074] Figure 1 shows a schematic cross-sectional view of a radiation-emitting semiconductor device described herein according to an exemplary embodiment.

[0075] Figure 2 shows a detailed schematic cross-sectional view of a radiation-emitting semiconductor device according to an exemplary embodiment.

[0076] Figures 3, 4, 5, 6, 7 and 8 show a schematic cross-sectional view of a radiation-emitting semiconductor device described herein in various steps of a method for manufacturing a radiation-emitting semiconductor device according to an embodiment.

[0077] Figures 9, 10, 11, 12, 13 and 14 show a schematic cross-sectional view of a radiation-emitting semiconductor device described herein in 2024PF01192 12 December 2025

[0078] P2024, 0905 WO N

[0079] - 13 -different steps of a method for manufacturing a radiation-emitting semiconductor device according to an exemplary embodiment .

[0080] Figures 15 and 16 show alternative implementation forms of the process which can replace the process described in connection with Figures 7, 8, 13 and 14.

[0081] Figures 17, 18, 19, 20 and 21 show the process of transferring the semiconductor layer sequences from the growth substrate to the support and singulating the semiconductor devices according to an embodiment.

[0082] Figures 22, 23 and 24 show a schematic cross-sectional view of a radiation-emitting semiconductor device described herein in various steps of a method for its manufacture according to an embodiment.

[0083] Figure 25 shows a diagram to illustrate an exemplary embodiment.

[0084] Figure 26 shows an implementation form of a comparative example.

[0085] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation. 2024PF01192 December 12, 2025

[0086] P2024, 0905 WO N

[0087] - 14 - Figure 1 shows a schematic cross-sectional view of a radiation-emitting semiconductor device 1 described herein according to an embodiment .

[0088] The radiation-emitting semiconductor device 1 has a semiconductor layer sequence 2 .

[0089] The semiconductor layer sequence 2 has an active layer 7 for generating electromagnetic radiation, a radiation-emitting side 2a, and a bottom surface 2b. The semiconductor layer sequence 2 has at least one flank 6 extending from the radiation-emitting side 2a to the bottom surface 2b. The semiconductor layer sequence 2 widens from the bottom surface 2b to the radiation-emitting side 2a.

[0090] A contact layer 5 is located on the radiation-exit side 2a. The contact layer 5 is configured as an n-type contact layer. In particular, the contact layer 5 provides a mechanically stable and electrically conductive surface for bonding. In other words, the contact layer 5 is designed to contact an n-doped region of the semiconductor layer sequence 2 of the semiconductor device 1. Consequently, an n-doped semiconductor region is arranged between the contact layer 5 and the active layer 7, and a p-doped semiconductor region is arranged between the active layer 7 and the support 12.

[0091] The radiation exit side 2a is designed to improve the coupling of electromagnetic radiation. In particular, the radiation exit side 2a has a deliberately roughened surface to facilitate the emission of radiation. A reflected light beam 3, which in the 2024PF01192 12 December 2025

[0092] P2024, 0905 WO N

[0093] The electromagnetic radiation generated by the active layer 7 is represented as an example.

[0094] The underside 2b is designed in particular to establish an electrical connection between the semiconductor layer sequence 2 and / or a mechanical connection with the support 12. It is possible that the support 12 and the semiconductor layer sequence 2 are mechanically connected to each other, for example via direct bonding.

[0095] Figure 2 shows a detailed schematic cross-sectional view of a radiation-emitting semiconductor device 1 according to the first embodiment.

[0096] The detailed view shows that the semiconductor layer sequence 2 is provided with at least one electromagnetic radiation-reflecting mirror coating 10 on the flank 6 and on the underside 2b.

[0097] The mirror coating 10 comprises a first mirror layer 101, an intermediate layer 102, and a second mirror layer 103. Figure 2 also shows a p-contact layer 9 and a bonding material 11. The bonding material 11 is arranged between the support 12 and the semiconductor layer sequence 2. The bonding material 11 comprises three metal layer sequences: a first metal layer sequence 21, a second metal layer sequence 22, and a third metal layer sequence 23.

[0098] The first mirror layer 101 can be a dielectric mirror, in particular a DBR mirror. The intermediate layer 102, which can serve as an insulating and protective layer, has the following properties: 2024PF01192 12 December 2025

[0099] P2024, 0905 WO N

[0100] - 16 - Example: an aluminum oxide (A12O3) on . The second mirror layer 103 is, for example, a metallic mirror that contains or consists of at least one of the following metals: aluminum, silver, gold.

[0101] Beneath the substrate 12 is a metallization 13. The metallization 13 serves as a protective layer and improves adhesion and electrical conductivity. The metallization 13 can consist of materials such as aluminum, copper, gold, nickel, or titanium.

[0102] Figure 3 shows a semiconductor layer sequence 2 that has grown epitaxially in a growth direction G on a growth substrate 20.

[0103] The growth substrate 20 is, in particular, a GaAs substrate. The individual layers of the semiconductor layer sequence 2 are applied sequentially to create a targeted material structure.

[0104] Figure 4 shows the application of a p-contact layer 9 to the semiconductor layer sequence 2. The p-contact layer 9 is applied as a transparent conductive layer to the surface of the semiconductor layer sequence 2.

[0105] The p-contact layer 9 can be made of materials such as titanium, platinum, and / or gold and applied to the semiconductor layer sequence 2 by sputtering or vapor deposition. After application, the p-contact layer 9 is optimized to minimize electrical resistance and ensure a stable connection between it and the semiconductor layer sequence 2. This optimization process can involve, for example, annealing. 2024PF01192 December 12, 2025

[0106] P2024, 0905 WO N

[0107] 17

[0108] Figure 5 shows the partial removal of part of the p-contact layer 9. The partial removal of the p-contact layer 9 can be carried out, for example, by etching.

[0109] Figure 6 shows the formation of a flank 6. The generation of the flank 6 can be carried out, for example, by means of optimized photolithography. The optimized photolithography allows for optimal adjustment of the angle between flank 6 and the growth substrate 20.

[0110] Figure 7 shows the application of the reflective coating 10 to the entire surface of the semiconductor layer sequence 2 and the flank 6. The reflective coating 10 has three layers: a first reflective layer 101, an intermediate layer 102, and a second reflective layer 103. The reflective coating 10 of the flank 6 can help to reduce light loss and to direct the light rays 3 more strongly towards the light-exiting side 2a.

[0111] Figure 8 shows the removal of an excess of the second mirror layer 103 from the area without the semiconductor layer sequences, i.e., to the sides of the flanks.

[0112] Figures 9 to 14 show an alternative implementation of the process, which can replace the process described in connection with Figures 3 to 8.

[0113] Figure 9 shows the application of a p-contact layer 9 to the semiconductor layer sequence 2. The p-contact layer can, for example, be applied to the entire side of the semiconductor layer sequence 2 facing away from the growth substrate 20. 2024PF01192 December 12, 2025

[0114] P2024, 0905 WO N

[0115] 18

[0116] Figure 10 shows the formation of a flank 6, as already described in connection with Figure 6.

[0117] Figure 11 shows the deposition of a first mirror layer 101 onto the semiconductor layer sequence 2. The first mirror layer 101 can be a dielectric mirror, in particular a DBR mirror. The process of deposition of the DBR mirror onto the semiconductor layer sequence 2 can be carried out by molecular beam epitaxy (MBE) and / or chemical vapor deposition (CVD). Layers with high and low refractive indices can be precisely deposited alternately to generate constructive interference.

[0118] Figure 12 shows the application of an intermediate layer 102 to the first mirror layer 101. The intermediate layer 102, which can serve as an insulating and protective layer, can, for example, consist of aluminum oxide (Al2O3).

[0119] Figure 13 shows the application of a second mirror layer 103 to the semiconductor layer sequence 2. For example, the second mirror layer 103 can be applied to the intermediate layer 102.

[0120] Figure 13 shows the simultaneous, partial removal of the intermediate layer 102 and the first mirror layer 101. To enable contact between the second mirror layer and the p-contact, a first opening 8 can be formed, for example. 2024PF01192 December 12, 2025

[0121] P2024, 0905 WO N

[0122] 19

[0123] Figure 14 shows the removal of the excess of the second mirror layer 103 from the area without

[0124] Haiblei ter schichtenfolgen .

[0125] Figure 15 shows an alternative embodiment of the method, which can replace the method described in conjunction with Figures 7, 8, 13, and 14. Figure 15 shows the application of an intermediate layer 102 and a second mirror layer 103 to the entire surface of the semiconductor layer sequence 2 and the flank 6.

[0126] Figure 16 shows an alternative embodiment of the method, which can replace the method described in conjunction with Figures 7, 8, 13 and 14. Figure 16 shows the application of a first mirror layer 101 and an intermediate layer 102 to the entire surface of the semiconductor layer sequence 2 and the flank 6, as well as the application of a second mirror layer 103 to the underside 2b.

[0127] Figure 17 shows the application of a first metal layer sequence 21 to areas of the semiconductor layer sequence 2 covered with the mirror coating 10. The first metal layer sequence 21 can, for example, contain Ti, Ni and / or Au.

[0128] Figure 18 shows the application of a second metal layer sequence 22 and a third metal layer sequence 23 to the substrate 12 in preparation for a rebonding process. The second metal layer sequence 22 can preferably be a PtAu layer sequence. The third metal layer sequence 23 can preferably be a TiNiSnI layer sequence. 2024PF01192 December 12, 2025

[0129] P2024, 0905 WO N

[0130] 20

[0131] Figure 19 shows the joining of the semiconductor layer sequence 2 to the support 12 in the stacking direction Y. The metal layer sequences can, for example, unite, integrate, or connect in a bonding material 11.

[0132] Figure 20 shows the removal or dissolution of the growth substrate 20 from the radiation exit side 2a of the semiconductor layer sequence 2 .

[0133] Figure 21 shows the step of separating the semiconductor layer sequence 2 into sub-regions. Separation is carried out, for example, by etching, but can alternatively also be carried out by sawing or scoring and breaking.

[0134] Figure 22 shows a cross-section of a semiconductor device produced by singulation in this way.

[0135] Figure 23 shows the application of a plurality of contact layers 5 to the radiation-exit side 2a of the semiconductor layer sequence 2. A structuring can be performed between the contact layers 5 on the radiation-exit side 2a of the semiconductor layer sequence 2. The radiation-exit side 2a of the semiconductor layer sequence 2 has a plurality of second openings 14 in which the n-contact region is exposed and freely accessible through the openings. For example, two such second openings are shown in Figure 21.

[0136] Figure 24 shows an encapsulation 4 of the second openings 14 on the radiation exit side 2a of the semiconductor layer sequence 2. The encapsulation 4 is dated December 12, 2025.

[0137] P2024, 0905 WO N

[0138] - 21 - Example formed by a thin layer of silicon nitride and / or silicon oxide .

[0139] Figure 25 shows a simulation of the intensity I as a function of the emission angle 5 for two semiconductor devices. In the simulation, one semiconductor device was assumed to be configured as shown in Figure 24 as an alternative comparison example – see curve V. The second curve A shows the intensity I for a semiconductor device described here, which has a mirrored edge at an angle of, for example, 45° to the substrate.

[0140] Figure 26 shows the semiconductor device according to the comparison example. In this comparison example, the sequence of semiconductor layers narrows from the underside towards the radiation-emitting side. This causes the light rays to be reflected into the active layer. In a semiconductor device described here, which has a mirrored edge at an angle of, for example, 45° to the substrate, the light extraction is more directed forward, and the overall brightness increases by 1.1% compared to the alternative comparison example.

[0141] The invention described herein is not limited to the exemplary embodiments described herein. Rather, the invention encompasses every novel feature and every combination of features, including in particular every combination of features in the claims, even if that feature or combination itself is not expressly stated in the claims or exemplary embodiments. 2024PF01192 December 12, 2025

[0142] P2024, 0905 WO N

[0143] - 22 - This patent application claims priority from German patent application DE 10 2025 100 415.3, the disclosure of which is hereby incorporated by reference. 2024PF01192 12 December 2025

[0144] P2024, 0905 WO N

[0145] 23 List of reference symbols

[0146] 1. Radiation-emitting semiconductor device 2. Semiconductor layer sequence

[0147] 2a Radiation exit side

[0148] 2b Underside

[0149] 3 light beam

[0150] 4 Encapsulation

[0151] 5 Contact layer

[0152] 6 flank

[0153] 7 active layer

[0154] 8 first opening

[0155] 9 p-contact layer

[0156] 10 Mirror coating

[0157] 11 Connecting material

[0158] 12 carriers

[0159] 13 Metallization

[0160] 14 second opening

[0161] 20 Growth substrate

[0162] 21 first metal layer sequence

[0163] 22 second metal layer sequence

[0164] 23 third metal layer sequence

[0165] 101 first mirror layer

[0166] 102 Intermediate shift

[0167] 103 second mirror layer

[0168] G Growth direction

[0169] Y Stacking direction

[0170] a acute angle

[0171] 5 Emission angle

[0172] I Intensity

[0173] Example A

[0174] V. Comparative example

Claims

2024PF01192 December 12, 2025 P2024 , 0905 WO N - 24 - Patent claims 1. Radiation-emitting semiconductor device ( 1 ) with a support ( 12 ) and a radiation-emitting semiconductor layer sequence ( 2 ) arranged on the support ( 12 ), wherein the semiconductor layer sequence ( 2 ) has an active layer ( 7 ) for generating electromagnetic radiation, a radiation emission side ( 2a ) facing away from the support ( 12 ), a bottom side ( 2b ) facing the support ( 12 ) and at least one flank ( 6 ) extending from the radiation emission side ( 2a ) to the bottom side ( 2b ), the semiconductor layer sequence ( 2 ) widens from the underside ( 2b ) towards the radiation exit side ( 2a ), the semiconductor layer sequence ( 2 ) is provided on the flank ( 6 ) and on the underside ( 2b ) with at least one electromagnetic radiation-reflecting mirror coating ( 10 ), and the flank ( 6 ) with one of the top surfaces of the support ( 12 ) facing the semiconductor layer sequence ( 2 ) forms an acute angle (a) between 40° inclusive and 50° inclusive.

2. Radiation-emitting semiconductor device ( 1 ) according to the preceding claim, wherein the mirror coating ( 10 ) completely surrounds the semiconductor layer sequence ( 2 ) laterally.

3. Radiation-emitting semiconductor device (1) according to at least one of the preceding claims, wherein the mirror coating (10) extends uninterrupted from the flank (6) to the underside (2b). 2024PF01192 12 December 2025 P2024 , 0905 WO N - 25 - 4. Radiation-emitting semiconductor device ( 1 ) according to at least one of the preceding claims, wherein the mirroring ( 10 ) comprises at least a first ( 101 ) and a second mirror layer ( 103 ), wherein the first mirror layer ( 101 ) is a dielectric mirror and the second mirror layer ( 103 ) is a metallic mirror .

5. Radiation-emitting semiconductor device ( 1 ) according to the preceding claim, wherein the first mirror layer ( 101 ) is directly adjacent to the semiconductor layer sequence ( 2 ).

6. Radiation-emitting semiconductor device ( 1 ) according to one of the two preceding claims, wherein an intermediate layer ( 102 ) is arranged between the first mirror layer ( 101 ) and the second mirror layer ( 103 ).

7. Radiation-emitting semiconductor device ( 1 ) according to one of the three preceding claims, wherein the first mirror layer ( 101 ) is a DBR mirror, the intermediate layer ( 102 ) comprises an aluminum oxide and the second mirror layer ( 103 ) comprises silver .

8. Radiation-emitting semiconductor device ( 1 ) according to at least one of the preceding claims, wherein the mirror coating ( 10 ) covers at least 60% of the outer surface of the semiconductor layer sequence ( 2 ).

9. Radiation-emitting semiconductor device (1) according to at least one of the preceding claims, wherein the mirrored coating (10) on the underside (2b) has at least one first opening (8) through which the semiconductor layer sequence (2) can be electrically contacted. 2024PF01192 December 12, 2025 P2024, 0905 WO N - 26 - 10. Radiation-emitting semiconductor device ( 1 ) according to at least one of the preceding claims, in which a contact layer (5) with a plurality of second openings is applied to the semiconductor layer sequence (2 ) at the radiation exit side (2a ).

11. Radiation-emitting semiconductor device ( 1 ) according to at least one of the preceding claims, which is free of a growth substrate (20 ).

12. Radiation-emitting semiconductor device ( 1 ) according to at least one of the preceding claims, wherein the semiconductor device ( 1 ) is a micro-LED .

13. Method for manufacturing a radiation-emitting semiconductor device ( 1 ) , wherein the flank ( 6) is generated before the semiconductor layer sequence (2 ) is applied to the support ( 12 ) and a radiation-emitting semiconductor device ( 1 ) according to one of claims 1 to 12 is manufactured.

14. Method according to the preceding claim, wherein the growth substrate (20) is removed after application to the carrier (12).

15. Method according to one of the two preceding claims, wherein the mirroring ( 10 ) is produced before being applied to the carrier ( 12 ).

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