Plasma processing device

Abstract

A plasma processing device according to the present invention comprises: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an upper electrode assembly disposed above the substrate support; and a magnetic field generation unit disposed above the upper electrode assembly. The magnetic field generation unit includes: a plurality of electromagnet units each having an upper surface disposed along the same plane, with each electromagnet unit including an electromagnet and a yoke at least partially covering the electromagnet; a cooling plate in contact with the upper surfaces of the plurality of electromagnet units; and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

Description

Plasma processing apparatus

[0001] The present disclosure relates to a plasma processing apparatus.

[0002] Patent Document 1 discloses a plasma processing apparatus including an electromagnet having one or a plurality of annular coils centered on a central axis passing vertically through the center of a lower electrode above or above a processing container.

[0003] Japanese Patent Application Laid-Open No. 2015-201552

[0004] The present disclosure provides a technique for increasing the magnetic field strength in a plasma processing space in a plasma processing apparatus including an electromagnet.

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus including a plasma processing chamber, a substrate support portion disposed in the plasma processing chamber, an upper electrode assembly disposed above the substrate support portion, and a magnetic field generation unit disposed above the upper electrode assembly, the magnetic field generation unit being a plurality of electromagnet units each having an upper surface disposed along the same plane, each electromagnet unit including an electromagnet and a yoke at least partially covering the electromagnet, a cooling plate in contact with the upper surfaces of the plurality of electromagnet units, and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

[0006] The present disclosure provides a technique for increasing the magnetic field strength in a plasma processing space in a plasma processing apparatus including an electromagnet.

[0007] Figure 1 is a diagram illustrating the overview of a plasma processing apparatus according to the first embodiment. Figure 2 is a cross-sectional view illustrating the configuration of the electromagnet section of the plasma processing apparatus according to the first embodiment. Figure 3 is an exploded perspective view illustrating the configuration of the electromagnet section of the plasma processing apparatus according to the first embodiment. Figure 4 is a diagram illustrating the current flow in the electromagnet section of the plasma processing apparatus according to the first embodiment. Figure 5 is a diagram illustrating the magnetic field distribution in the electromagnet section of a reference example plasma processing apparatus. Figure 6 is a diagram illustrating the magnetic field distribution in the electromagnet section of the plasma processing apparatus according to the first embodiment. Figure 7 is a bottom view illustrating the configuration of the electromagnet section of the plasma processing apparatus according to the second embodiment. Figure 8 is a perspective view illustrating the configuration of the electromagnet section of the plasma processing apparatus according to the second embodiment. Figure 9 is a cross-sectional view illustrating the configuration of the electromagnet section of the plasma processing apparatus according to the third embodiment.

[0008] Hereinafter, embodiments for carrying out this disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are denoted by the same reference numerals to avoid redundant explanations. For ease of understanding, the scale of the parts in the drawings may differ from that of the actual parts. In directions such as parallel, right angles, orthogonal, horizontal, vertical, up and down, and left and right, deviations are permitted to the extent that they do not impair the effect of the embodiment. The shape of the corners is not limited to right angles and may be rounded. Parallel, right angles, orthogonal, horizontal, and vertical may include substantially parallel, substantially right angles, substantially orthogonal, substantially horizontal, and substantially vertical.

[0009] <First Embodiment> A plasma processing apparatus according to the first embodiment will now be described. The plasma processing apparatus according to the first embodiment comprises a plasma processing chamber, a substrate support portion disposed within the plasma processing chamber, an upper electrode assembly disposed above the substrate support portion, and a magnetic field generation unit disposed above the upper electrode assembly. The magnetic field generation unit in the plasma processing apparatus according to the first embodiment includes a plurality of electromagnet units, a cooling plate in contact with the upper surfaces of the plurality of electromagnet units, and at least one additional yoke extending downward from at least one of the plurality of electromagnet units. The plurality of electromagnet units in the magnetic field generation unit of the plasma processing apparatus according to the first embodiment each have upper surfaces arranged along the same plane. Each electromagnet unit in the magnetic field generation unit of the plasma processing apparatus according to the first embodiment includes an electromagnet and a yoke that at least partially covers the electromagnet. The plasma processing apparatus according to the first embodiment will now be described from another viewpoint. The plasma processing apparatus according to the first embodiment comprises a plasma processing chamber having a plasma processing space, a coil through which a current for generating a magnetic field flows, a housing portion that accommodates the coil, and an extension portion that extends from the housing portion in a direction toward the plasma processing space along a first direction. In the plasma processing apparatus according to the first embodiment, the storage section and the extension section are formed of a high-permeability magnetic material. The length of the extension section in the plasma processing apparatus according to the first embodiment along the first direction is 0.5 times or more the length of the coil housed in the storage section along the first direction. In addition, in the plasma processing apparatus according to the first embodiment, the extension section, which is formed separately from the storage section, is connected to the storage section.

[0010] The following describes an example of the configuration of a plasma processing system 100, which is an example of a plasma processing system according to the embodiment of this disclosure. Figure 1 is a diagram illustrating the overview of a plasma processing system 100, which is an example of a plasma processing system according to this embodiment. Figure 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus 1 included in the plasma processing system 100.

[0011] The plasma processing system 100 includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, an exhaust system 40, and an electromagnet unit 50. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support portion 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0012] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0013] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0014] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0015] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0016] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. The showerhead 13 is an example of an upper electrode assembly. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0017] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one processing gas.

[0018] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF (Radio Frequency) signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0019] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0020] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0021] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0022] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as voltage pulse generation units configured to generate a sequence of voltage pulses. Thus, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has multiple cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, the burst of voltage pulses is repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may have an arbitrary waveform having a rectangle, trapezoid, triangle, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have positive polarity or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first voltage generation unit 32a and the second voltage generation unit 32b may be provided in addition to the power supply 31, and the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0023] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0024] The electromagnet unit 50 generates a magnetic field in the plasma processing space 10s. The electromagnet unit 50 comprises annular coils 61, 62, 63, 64, and 65, and an electromagnet excitation circuit 56. Power (current) is supplied to each of the coils 61, 62, 63, 64, and 65 from the electromagnet excitation circuit 56. The details of the configuration of the electromagnet unit 50 will be described later.

[0025] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0026] The electromagnet section 50 will now be described in detail. Figure 2 is a cross-sectional view illustrating the configuration of the electromagnet section 50 provided in a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment. Figure 3 is an exploded perspective view illustrating the configuration of the electromagnet section 50 provided in a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment. In Figure 3, the coils 61, 62, 63, 64, and 65 are not shown.

[0027] For ease of explanation, drawings may include a virtual three-dimensional coordinate system (XYZ Cartesian coordinate system) consisting of mutually orthogonal X, Y, and Z axes (XYZ axes). When a circle with an "X" inside is shown on a coordinate axis, it indicates that the coordinate axis is pointing away from the viewer relative to the paper.

[0028] However, this coordinate system is defined for illustrative purposes only and is not limited to the orientation of the plasma processing apparatus, etc., according to the embodiment.

[0029] Viewing an object from the +Z side in the opposite direction of the Z axis, along the Z axis, is called a plan view. Viewing an object from the -Z side in the direction of the Z axis, along the Z axis, is called a bottom view.

[0030] The electromagnet unit 50 generates a magnetic field in the plasma processing space 10s. The electromagnet unit 50 is an example of a magnetic field generation unit. The electromagnet unit 50 is provided above the shower head 13, at a distance from the shower head 13. In other words, the electromagnet unit 50 is positioned above the shower head 13. The plasma processing apparatus 1 has a space between the shower head 13 and the electromagnet unit 50.

[0031] The electromagnet unit 50 includes storage units 51, 52, 53, and 54, coils 61, 62, 63, 64, and 65, extension units 71, 72, 73, and 74, a cooling unit 58, and a holding unit 59.

[0032] Each of the storage sections 51, 52, 53, 54, extensions 71, 72, 73, and 74 is formed from a high-permeability magnetic material. Each of the storage sections 51, 52, 53, 54, extensions 71, 72, 73, and 74 is formed from, for example, pure iron. Nickel plating may be applied to the surface of the pure iron. Because each of the storage sections 51, 52, 53, 54, extensions 71, 72, 73, and 74 is formed from a high-permeability magnetic material, magnetic flux can pass through more easily.

[0033] Each of the coils 61, 62, 63, 64, and 65 is formed by winding a wire, such as copper, in a ring shape. Each of the coils 61, 62, 63, 64, and 65 has a different diameter from the others. Coil 61 has the smallest diameter, and the diameters increase in the order of coil 62, coil 63, coil 64, and coil 65.

[0034] The electromagnet section 50 includes a combination of coil 61 and storage section 51, a combination of coil 62 and storage section 52, a combination of coil 63 and storage section 53, and a combination of coil 64 and coil 65 and storage section 54. In other words, the electromagnet section 50 includes multiple combinations of coils and storage sections. Note that a combination of coils and storage sections is sometimes called an electromagnet unit. The electromagnet section 50 includes multiple electromagnet units. The upper surfaces of storage sections 51, 52, 53, and 54 are arranged along the same plane. In other words, each of the multiple electromagnet units has an upper surface that is arranged along the same plane.

[0035] The storage section 51 houses the coil 61. The storage section 51 covers the coil 61 at least partially. The storage section 51 has an inner cylindrical plate 51a, an outer cylindrical plate 51b, and a top plate 51c. The lower surface of the storage section 51 is positioned lower than the lower surfaces of the respective storage sections 52 and 53. The inner cylindrical plate 51a, the outer cylindrical plate 51b, and the top plate 51c are formed integrally. Because the inner cylindrical plate 51a, the outer cylindrical plate 51b, and the top plate 51c are formed integrally, the storage section 51 has a groove 51h that opens downwards. The coil 61 is inserted into and stored in the groove 51h of the storage section 51. The coil 61 may be stored in the groove 51h and sealed with a sealing material such as epoxy resin, silicone resin, or urethane resin. The same applies to the coil described below.

[0036] The inner cylindrical plate 51a has a cylindrical shape. The inner cylindrical plate 51a is provided projecting to the -Z side along the inner end of the annule of the top plate 51c when viewed from above or from the bottom. The outer cylindrical plate 51b has a cylindrical shape. The outer cylindrical plate 51b is provided projecting to the -Z side along the outer end of the annule of the top plate 51c when viewed from above or from the bottom. The top plate 51c is an annular plate that forms an annular shape when viewed from above or from the bottom. The +Z side surface (top surface) of the top plate 51c is in contact with the cooling section 58.

[0037] The -Z end face of the coil 61 is substantially the same as the surface formed by the -Z end of the storage section 51. The -Z end face of the coil 61 may be on the +Z side of the surface formed by the -Z end of the storage section 51. However, the length along the Z-axis from the -Z end face of the coil 61 to the surface formed by the -Z end of the storage section 51 is less than 0.5 times the length of the coil 61 along the Z-axis. The same applies to the storage section and coil described below.

[0038] The storage section 52 houses the coil 62. The storage section 52 covers the coil 62 at least partially. The storage section 52 has an inner cylindrical plate 52a, an outer cylindrical plate 52b, and a top plate 52c. The inner cylindrical plate 52a, the outer cylindrical plate 52b, and the top plate 52c are integrally formed. Because the inner cylindrical plate 52a, the outer cylindrical plate 52b, and the top plate 52c are integrally formed, the storage section 52 has a groove 52h that opens downwards. The coil 62 is inserted into the groove 52h of the storage section 52 and stored therein.

[0039] The inner cylindrical plate 52a has a cylindrical shape. The inner cylindrical plate 52a is provided projecting to the -Z side along the inner end of the annule on the top plate 52c when viewed from above or from the bottom. The inner cylindrical plate 52a is provided adjacent to the outer cylindrical plate 51b in the storage section 51. The outer cylindrical plate 52b has a cylindrical shape. The outer cylindrical plate 52b is provided projecting to the -Z side along the outer end of the annule on the top plate 52c when viewed from above or from the bottom. The top plate 52c is an annular plate that forms an annular shape when viewed from above or from the bottom. The +Z side surface (top surface) of the top plate 52c is in contact with the cooling section 58.

[0040] The storage section 53 houses the coil 63. The storage section 53 covers the coil 63 at least partially. The storage section 53 has an inner cylindrical plate 53a, an outer cylindrical plate 53b, and a top plate 53c. The inner cylindrical plate 53a, the outer cylindrical plate 53b, and the top plate 53c are formed integrally. Because the inner cylindrical plate 53a, the outer cylindrical plate 53b, and the top plate 53c are formed integrally, the storage section 53 has a groove 53h that opens downwards. The coil 63 is inserted into the groove 53h of the storage section 53 and stored therein.

[0041] The inner cylindrical plate 53a has a cylindrical shape. The inner cylindrical plate 53a is provided projecting to the -Z side along the inner end of the annule on the top plate 53c when viewed from above or from the bottom. The inner cylindrical plate 53a is provided adjacent to the outer cylindrical plate 52b in the storage section 52. The outer cylindrical plate 53b has a cylindrical shape. The outer cylindrical plate 53b is provided projecting to the -Z side along the outer end of the annule on the top plate 53c when viewed from above or from the bottom. The top plate 53c is an annular plate that forms an annular shape when viewed from above or from the bottom. The +Z side surface (top surface) of the top plate 53c is in contact with the cooling section 58.

[0042] The storage section 54 houses coils 64 and 65. The storage section 54 covers each of coils 64 and 65 at least partially. The storage section 54 has an inner cylindrical plate 54a, an outer cylindrical plate 54b, a partition plate 54d, and a top plate 54c. The lower surface of the storage section 54 is positioned lower than the lower surfaces of storage sections 52 and 53, respectively. The inner cylindrical plate 54a, the outer cylindrical plate 54b, the partition plate 54d, and the top plate 54c are integrally formed. Because the inner cylindrical plate 54a, the outer cylindrical plate 54b, the partition plate 54d, and the top plate 54c are integrally formed, the storage section 54 has grooves 54h1 and 54h2 that open downwards. Coil 64 is inserted into groove 54h1 of the storage section 54 and stored there. Coil 65 is inserted into groove 54h2 of the storage section 54 and stored there.

[0043] The inner cylindrical plate 54a has a cylindrical shape. The inner cylindrical plate 54a is provided projecting -Z along the inner end of the annule on the top plate 54c when viewed from above or from the bottom. The inner cylindrical plate 54a is provided adjacent to the outer cylindrical plate 53b in the storage section 53. The outer cylindrical plate 54b has a cylindrical shape. The outer cylindrical plate 54b is provided projecting -Z along the outer end of the annule on the top plate 54c when viewed from above or from the bottom. The partition plate 54d is provided projecting -Z along the center of the annule on the top plate 54c when viewed from above or from the bottom. The top plate 54c is an annular plate that forms an annular shape when viewed from above or from the bottom. A part of the +Z side surface (top surface) of the top plate 54c, approximately half of the inner surface, is in contact with the cooling section 58.

[0044] The extension part 71 has a cylindrical shape. The extension part 71 is attached to the lower part of the storage part 51. The extension part 71 is attached so as to overlap the inner cylinder plate 51a in the storage part 51 in a bottom view. The extension part 71 extends downward from the storage part 51.

[0045] The extension part 72 has a cylindrical shape. The extension part 72 is attached to the lower parts of the storage part 51 and the storage part 52. The extension part 72 is attached so as to overlap the outer cylinder plate 51b in the storage part 51 and the inner cylinder plate 52a in the storage part 52 in a bottom view. The extension part 72 extends downward from the storage parts 51 and 52.

[0046] The extension part 73 has a cylindrical shape. The extension part 73 is attached to the lower parts of the storage part 52 and the storage part 53. The extension part 73 is attached so as to overlap the outer cylinder plate 52b in the storage part 52 and the inner cylinder plate 53a in the storage part 53 in a bottom view. The extension part 73 extends downward from the storage parts 52 and 53.

[0047] The extension part 74 has a cylindrical shape. The extension part 74 is attached to the lower part of the storage part 53. The extension part 74 is attached so as to overlap the outer cylinder plate 53b in the storage part 53 in a bottom view. The extension part 74 extends downward from the storage part 53.

[0048] The cooling part 58 cools each of the storage part 51, the storage part 52, the storage part 53, and the storage part 54. By the cooling part 58 cooling each of the storage part 51, the storage part 52, the storage part 53, and the storage part 54, each of the coils 61, 62, 63, 64, and 65 is cooled. The cooling part 58 cools each of the storage part 51, the storage part 52, the storage part 53, and the storage part 54, for example, by flowing a temperature-controlled medium cooled outside into a flow path formed inside the cooling part 58. The cooling part 58 is an example of a cooling plate.

[0049] Each of the storage compartments 51, 52, 53, and 54 is connected to the cooling section 58. Each of the storage compartments 51, 52, 53, and 54 may be connected to the cooling section 58 by bolts, by bonding with an adhesive layer in between, or by welding. A heat transfer material, such as grease, may be applied between each of the storage compartments 51, 52, 53, and 54 and the cooling section 58.

[0050] Each of the storage units 51, 52, 53, and 54 is arranged side by side along the surface 58S of the cooling unit 58. By arranging each of the storage units 51, 52, 53, and 54 side by side along the surface 58S of the cooling unit 58, multiple electromagnet units are arranged along the same plane.

[0051] The holding portion 59 holds the electromagnet portion 50 so as to attach it to the plasma processing chamber 10. The holding portion 59 has an opening 59h in the center. Extensions 71, 72, 73, and 74 protrude from the opening 59h toward the plasma processing chamber 10. A storage portion 54 is provided opposite to the upper surface of the holding portion 59. The magnetic field generated by coils 64 and 65 housed in the storage portion 54 is generated toward the plasma processing chamber 10 by passing through the holding portion 59. The holding portion 59 is made of a non-magnetic material, such as aluminum, so that the magnetic field can pass through it.

[0052] Let H1 be the length along the Z-axis from the +Z end to the -Z end of the storage section 54, and H2 be the length along the Z-axis from the +Z end of the storage section 52 or storage section 53 to the -Z end of the extension section 73 or extension section 74. Let H3 be the length along the Z-axis from the +Z end of the storage section 51 to the -Z end of the extension section 71 or extension section 72.

[0053] In the example in Figure 2, length H2 is longer than length H1. Also, length H3 is longer than both length H1 and length H2. Note that at least two of lengths H1, H2, and H3 may be the same, and lengths H1, H2, and H3 may also be the same.

[0054] Furthermore, the length of the coil 61 along the Z-axis direction is h10, and the lengths of the extensions 71 and 72 along the Z-axis direction are h11. The length of the coil 62 or coil 63 along the Z-axis direction is h20, and the lengths of the extensions 73 and 74 along the Z-axis direction are h21. It is desirable that the length h11 (vertical dimension) is 0.5 times or more the length h10 (vertical dimension). Also, it is desirable that the length h21 (vertical dimension) is 0.5 times or more the length h20 (vertical dimension). Also, the length h21 is different from the length h11. By making the length of the extension along the Z-axis direction 0.5 times or more the length of the coil along the Z-axis direction, the influence of the magnetic field distribution in the plasma processing space by the extension can be greatly increased.

[0055] The plasma processing apparatus 1 comprises coils 61, 62, 63, 64, and 65. In other words, the plasma processing apparatus 1 comprises a plurality of coils. The plasma processing apparatus 1 comprises a first storage section in which one of the plurality of coils is housed, a first extension section extending from the first storage section, a second storage section in which a second coil different from the first coil is housed, and a second extension section extending from the second storage section. In the plasma processing apparatus 1, the length of the second extension section is different from the length of the first extension section.

[0056] To explain in more detail, the length h21 of the extensions 73 and 74 extending from the storage section 53 in which coil 63 is housed in the multiple coils provided in the plasma processing apparatus 1 is different from the length h11 of the extensions 71 and 72 extending from the storage section 51 in which coil 61 is housed. For example, coil 61 is an example of a first coil, storage section 51 is an example of a first storage section, extension 71 or extension 72 is an example of a first extension section, coil 63 is an example of a second coil, storage section 53 is an example of a second storage section, and extension 73 or extension 74 is an example of a second extension section.

[0057] The currents flowing through coils 61, 62, 63, 64, and 65 will be described. Figure 4 is a diagram illustrating the current flow in the electromagnet section 50 of a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment. Figure 4 is a bottom view of the electromagnet section 50. In Figure 4, the holding section 59 is omitted from the illustration.

[0058] In the electromagnet section 50, the current supplied from the electromagnet excitation circuit 56 to coils 61, 62, 63, 64, and 65 flows counterclockwise in a bottom view, as shown by the arrowed lines in Figure 4. A magnetic field is generated by the current flowing through each of the coils 61, 62, 63, 64, and 65.

[0059] The magnetic fields formed by coils 61, 62, 63, 64, and 65 will be described. Figure 5 is a diagram illustrating the magnetic field distribution in the electromagnet section of a reference example plasma processing apparatus. Figure 6 is a diagram illustrating the magnetic field distribution in the electromagnet section 50 of a plasma processing apparatus 1, which is an example of a plasma processing apparatus according to the first embodiment. Figure 5 shows an example in which the electromagnet section 50 does not have extensions 71, 72, 73, and 74. Figures 5 and 6 are cross-sectional views corresponding to the I-I cross-sectional view in Figure 4, respectively.

[0060] In Figures 5 and 6, a circle with an "X" inside indicates that the current flows towards the back of the page. A circle with a black circle inside indicates that the current flows towards the front of the page.

[0061] First, let's explain the case without the extension section using Figure 5. The magnetic field generated by coil 61 is generated from the -Z end of the storage section 51 towards the -Z side, as shown by the magnetic field lines indicated by the arrows in Figure 5. Similarly, the magnetic fields generated by coils 62 and 63 are generated from the -Z ends of the storage sections 52 and 53 towards the -Z side, respectively. In addition, the magnetic fields generated by coils 64 and 65 are generated from the -Z end of the storage section 54 towards the -Z side.

[0062] Next, we will explain the case where there are extensions, using Figure 6. The magnetic field generated by coil 61 is generated from the -Z end of extensions 71 and 72, respectively, towards the -Z side, as shown by the magnetic field lines indicated by the arrows in Figure 6. Similarly, the magnetic field generated by coil 62 is generated from the -Z end of extensions 72 and 73, respectively, towards the -Z side. In addition, the magnetic field generated by coil 63 is generated from the -Z end of extensions 73 and 74, respectively, towards the -Z side.

[0063] As shown in Figures 5 and 6, the electromagnet unit 50 is equipped with extensions 71, 72, 73, and 74, which allows the position where magnetic field lines enter and exit to be moved toward the plasma processing chamber 10 side (-Z side). By moving the position where magnetic field lines enter and exit to the plasma processing chamber 10 side (-Z side), the magnetic field strength in the plasma processing space 10s within the plasma processing chamber 10 can be increased.

[0064] The plasma processing apparatus according to the first embodiment includes an electromagnet comprising a housing section and a coil, and by providing an extension section, the magnetic field strength in the plasma processing space can be increased.

[0065] In plasma processing equipment, electromagnets are sometimes used to generate and control a magnetic field in the plasma processing space, thereby controlling the plasma density distribution within that space. For example, when etching in a plasma processing equipment, the target etching shape can be achieved by controlling the magnetic field with electromagnets. Increasing the magnetic field generated by the electromagnets makes it easier to adjust the magnetic field distribution to obtain the target. Possible ways to increase the magnetic field include increasing the current value, increasing the number of coil turns, increasing the number of electromagnets, and bringing the electromagnets closer to the plasma processing space.

[0066] The plasma processing apparatus according to the first embodiment, by including an extension, generates magnetic field lines from the tip of the extension, thereby achieving the same effects and actions as bringing an electromagnet close to the plasma processing space, and increasing the magnetic field strength in the plasma processing space. Furthermore, according to the plasma processing apparatus according to the first embodiment, the same effects and actions as bringing an electromagnet close to the plasma processing space can be achieved without unnecessarily increasing the size of the coil itself.

[0067] Furthermore, in plasma processing equipment, electromagnets may lose their function due to overheating. Therefore, electromagnets are cooled by air or water in plasma processing equipment. By cooling electromagnets by air or water in plasma processing equipment, for example, the reproducibility of forming the target etching shape can be improved when etching.

[0068] For example, to bring electromagnets closer to the plasma processing space, one could consider placing some electromagnets closer to the plasma processing space, creating a stepped structure for the electromagnets. However, creating a stepped structure for the electromagnets means that the electromagnets are no longer arranged on the same plane, which complicates the cooling mechanism. Furthermore, with a stepped structure, the electromagnets placed on the lower side will be further away from the cooling mechanism, potentially reducing their cooling efficiency.

[0069] The plasma processing apparatus according to the first embodiment, by including an extension, allows the storage sections for housing the coils to be arranged side by side along the surface of the cooling section, thus enabling stable cooling of the coils housed in the storage sections. Because the plasma processing apparatus according to the first embodiment can stably cool the coils housed in the storage sections, plasma processing, such as etching, can be performed with high reproducibility. Furthermore, because the storage sections for housing the coils can be arranged side by side along the surface of the cooling section, the design of the cooling section can be simplified.

[0070] In the example described above, the electromagnet unit 50 was equipped with storage compartments 51, 52, 53, and 54, but the number of storage compartments is not limited to the example above and may be changed as appropriate. Also, the number of coils housed in each storage compartment is not limited to the example above and may be changed as appropriate. Furthermore, although the electromagnet unit 50 was equipped with storage compartments 51, 52, 53, and 54, multiple coils may be housed in a single storage compartment.

[0071] <Second Embodiment> A plasma processing apparatus according to the second embodiment will now be described. The plasma processing apparatus according to the second embodiment differs from the plasma processing apparatus according to the first embodiment in that the extension portion has a notch in the portion that interferes with a component provided between the storage portion and the plasma processing chamber.

[0072] Furthermore, a plasma processing apparatus according to the second embodiment will be described from another perspective. The plasma processing apparatus according to the second embodiment comprises a plasma processing chamber having a plasma processing space, a coil through which a current for generating a magnetic field flows, a housing section in which the coil is housed, and an extension section extending from the housing section in a direction toward the plasma processing space along a first direction. The housing section and the extension section in the plasma processing apparatus according to the second embodiment are formed of a high-permeability magnetic material. The extension section of the plasma processing apparatus according to the second embodiment has a notch in the portion that interferes with a component provided between the housing section and the plasma processing chamber.

[0073] The electromagnet section in the plasma processing apparatus according to the second embodiment will be described with reference to the figures. Figure 7 is a bottom view illustrating the configuration of an electromagnet section 150, which is an example of an electromagnet section provided in the plasma processing apparatus according to the second embodiment. Figure 8 is a perspective view illustrating the configuration of an electromagnet section 150, which is an example of an electromagnet section provided in the plasma processing apparatus according to the second embodiment.

[0074] The plasma processing apparatus according to the second embodiment includes a gas introduction section 180 and a temperature control medium introduction / exit section 190, which are components connected to the plasma processing chamber and provided close to the plasma processing chamber side of the electromagnet section 150. The gas introduction section 180 and the temperature control medium introduction / exit section 190 are components provided between the electromagnet section 150 and the plasma processing chamber. In other words, the gas introduction section 180 and the temperature control medium introduction / exit section 190 are components provided between the storage sections 51, 52, 53, and 54 of the electromagnet section 150 and the plasma processing chamber.

[0075] The gas inlet 180 directs the processing gas supplied from the outside to the showerhead. The gas inlet 180 comprises a tip 181 and a pipe 182. The tip 181 is connected, for example, to the showerhead 13 in Figure 1. The pipe 182 is connected, for example, to the gas supply unit 20 in Figure 1. The processing gas supplied from the gas supply unit is supplied to the showerhead 13 through the pipe 182 and the tip 181.

[0076] The temperature-controlled medium inlet / outlet section 190 directs the temperature-controlled medium supplied from the outside to the shower head. The tip section 191 is connected to, for example, the shower head 13 in Figure 1. Each of the pipes 192 and 193 is connected to, for example, an externally installed temperature-controlled medium supply device. The temperature-controlled medium supplied from the temperature-controlled medium supply device is supplied to the shower head 13 through the pipe 192 and tip section 191. The temperature-controlled medium returning from the shower head 13 is sent to the externally installed temperature-controlled medium supply device through the pipe 193 and tip section 191.

[0077] The electromagnet section 150 includes extensions 173 and 174 in place of extensions 73 and 74 in the electromagnet section 50. For configurations in the electromagnet section 150 that are common with the electromagnet section 50, please refer to the description of the electromagnet section 50, and a detailed explanation will be omitted here.

[0078] The extension 173 has a cylindrical shape overall. Like the extension 73, the extension 173 is attached to the lower part of the storage section 52 and the storage section 53. Like the extension 73, the extension 173 is attached so as to overlap the outer cylindrical plate 52b in the storage section 52 and the inner cylindrical plate 53a in the storage section 53 when viewed from below.

[0079] The extension 173 has a notch 173a in the portion where the tip 181 of the gas introduction section 180 interferes with the extension 173. The extension 173 also has a notch 173b in the portion where the tip 191 of the temperature control medium introduction / exit section 190 interferes with the extension 173.

[0080] The extension 174 has a cylindrical shape overall. Like the extension 74, the extension 174 is attached to the lower part of the storage section 53. Like the extension 74, the extension 174 is attached so as to overlap the outer cylindrical plate 53b of the storage section 53 when viewed from below.

[0081] The extension 174 has a notch 174a in the portion where the piping 182 of the gas introduction section 180 interferes with the extension 174. The extension 174 also has a notch 174b in the portion where the piping 192 of the temperature control medium introduction / exit section 190 interferes with the extension 174. Furthermore, the extension 174 has a notch 174c in the portion where the piping 193 of the temperature control medium introduction / exit section 190 interferes with the extension 174.

[0082] The plasma processing apparatus according to the second embodiment, like the plasma processing apparatus according to the first embodiment, includes an electromagnet comprising a housing section and a coil, and by including an extension section, the magnetic field strength in the plasma processing space can be increased. Furthermore, in the plasma processing apparatus according to the second embodiment, by having a notch in the extension section, the extension section can be made longer overall without interfering with components provided between the housing section and the plasma processing chamber. In the plasma processing apparatus according to the second embodiment, by making the extension section longer overall, the magnetic field strength in the plasma processing space can be increased overall.

[0083] Due to the nature of winding coils, it is difficult to manufacture electromagnets that avoid only the parts that interfere. Therefore, the height to which the electromagnet can be lowered is limited to a height at which the coil does not interfere. In the plasma processing apparatus according to the second embodiment, by having a notch in the extension connected to the storage section that houses the coil, the same effect and operation as bringing the electromagnet closer to the plasma processing space can be obtained as a whole.

[0084] In the example described above, extensions 173 and 174 each had notches, but extensions 71 and 72 may each have notches to accommodate the components provided between the storage unit and the plasma processing chamber. Furthermore, the components provided between the storage unit and the plasma processing chamber are not limited to the gas introduction unit 180 or the temperature control medium introduction / exit unit 190.

[0085] <Third Embodiment> A plasma processing apparatus according to the third embodiment will now be described. In the plasma processing apparatus according to the third embodiment, instead of the extension being formed separately from the storage unit being connected to the storage unit, the storage unit and the extension are formed integrally.

[0086] The electromagnet section in the plasma processing apparatus according to the third embodiment will be described with reference to the figures. Figure 9 is a cross-sectional view illustrating the configuration of an electromagnet section 250, which is an example of an electromagnet section provided in the plasma processing apparatus according to the third embodiment.

[0087] The electromagnet section 250 replaces the storage sections 51, 52, 53, extension sections 71, 72, 73, and 74 of the electromagnet section 50 with coil holding sections 251, 252, and 253. For configurations in the electromagnet section 250 that are common with the electromagnet section 50, please refer to the description of the electromagnet section 50, and a detailed explanation will be omitted here.

[0088] The coil holding portion 251 has a shape in which the extension portion 71 and part of the extension portion 72 are integrated with the storage portion 51. The coil holding portion 251 has a storage portion 251a for housing the coil 61 and an extension portion 251b extending from the storage portion 251a in the -Z direction along the Z-axis direction.

[0089] In the coil holding portion 251, the portion where the coil 61 is housed, specifically the portion furthest to the -Z side along the Z-axis direction where the coil 61 is housed, is called the housing portion 251a. Also, in the coil holding portion 251, the portion where the coil 61 is housed, specifically the portion furthest to the -Z side along the Z-axis direction, to the -Z end of the coil holding portion 251 is called the extension portion 251b. Similar to the extension portion 71, it is desirable that the length of the extension portion 251b along the Z-axis direction be at least 0.5 times the length of the coil 61 along the Z-axis direction. The same applies to the following coil holding portions.

[0090] The coil holding portion 252 has a shape in which a part of the extension portion 72 and a part of the extension portion 73 are integrated with the storage portion 52. The coil holding portion 252 has a storage portion 252a for housing the coil 62 and an extension portion 252b extending from the storage portion 252a in the -Z direction along the Z-axis direction.

[0091] The coil holding portion 253 has a shape in which a part of the extension portion 73 and an extension portion 74 are integrated with the storage portion 53. The coil holding portion 253 has a storage portion 253a for housing the coil 63 and an extension portion 253b extending from the storage portion 253a in the -Z direction along the Z-axis direction.

[0092] The plasma processing apparatus according to the third embodiment, like the plasma processing apparatus according to the first embodiment, includes an electromagnet comprising a housing section and a coil, and by including an extension section, the magnetic field strength in the plasma processing space can be increased.

[0093] In the plasma processing apparatus according to the third embodiment, a notch may be provided, similar to the electromagnet section in the plasma processing apparatus according to the second embodiment.

[0094] The embodiments disclosed above include, for example, the following aspects:

[0095] [Note 1] A plasma processing apparatus comprising: a plasma processing chamber; a substrate support portion disposed within the plasma processing chamber; an upper electrode assembly disposed above the substrate support portion; and a magnetic field generating unit disposed above the upper electrode assembly, wherein the magnetic field generating unit comprises a plurality of electromagnet units, each having an upper surface arranged along the same plane, and each electromagnet unit includes an electromagnet and a yoke that at least partially covers the electromagnet; a cooling plate in contact with the upper surface of the plurality of electromagnet units; and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

[0096] [Note 2] The plasma processing apparatus according to Note 1, wherein the plurality of electromagnet units include at least one inner electromagnet unit, at least one intermediate electromagnet unit surrounding the at least one inner electromagnet unit, and at least one outer electromagnet unit surrounding the at least one intermediate electromagnet unit.

[0097] [Note 3] The plasma processing apparatus according to Note 2, wherein the at least one additional yoke includes at least one inner additional yoke extending downward from the at least one inner electromagnet unit.

[0098] [Note 4] The plasma processing apparatus according to Note 3, wherein the at least one additional yoke includes at least one intermediate additional yoke extending downward from the at least one intermediate electromagnet unit.

[0099] [Note 5] The plasma processing apparatus according to Note 4, wherein the at least one inner additional yoke extends below the at least one intermediate additional yoke.

[0100] [Note 6] The plasma processing apparatus according to Note 5, wherein the lower surface of the at least one inner electromagnet unit is positioned lower than the lower surface of the at least one intermediate electromagnet unit.

[0101] [Note 7] The plasma processing apparatus according to Note 6, wherein the lower surface of the at least one outer electromagnet unit is positioned lower than the lower surface of the at least one intermediate electromagnet unit.

[0102] [Note 8] The plasma processing apparatus according to any one of Notes 4 to 7, wherein the at least one intermediate electromagnet unit includes a plurality of intermediate electromagnet units, and the at least one intermediate additional yoke includes a plurality of intermediate additional yokes.

[0103] [Note 9] The plasma processing apparatus according to any one of Notes 1 to 8, wherein the vertical dimension of the at least one additional yoke is 0.5 times or more the vertical dimension of the yoke extending upward from the additional yoke.

[0104] [Note 10] The plasma processing apparatus according to any one of Notes 1 to 9, wherein the at least one additional yoke is formed separately from the yoke that extends upward from the additional yoke.

[0105] [Note 11] The plasma processing apparatus according to any one of Notes 1 to 9, wherein the at least one additional yoke is formed integrally with the yoke extending upward from the additional yoke.

[0106] [Note 12] The plasma processing apparatus according to any one of Notes 1 to 11, wherein the at least one additional yoke has a notch in the portion that interferes with other components.

[0107] [Note 13] A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber, wherein the magnetic field generating unit comprises a plurality of electromagnet units, each electromagnet unit comprising an electromagnet and a yoke that at least partially covers the electromagnet; and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

[0108] [Note 14] The plasma processing apparatus according to Note 13, wherein the plurality of electromagnet units include at least one inner electromagnet unit and at least one outer electromagnet unit surrounding the at least one inner electromagnet unit.

[0109] [Note 15] The plasma processing apparatus according to Note 14, wherein the at least one additional yoke includes at least one inner additional yoke extending downward from the at least one inner electromagnet unit.

[0110] [Note 16] The plasma processing apparatus according to Note 15, wherein the at least one additional yoke includes at least one outer additional yoke extending downward from the at least one outer electromagnet unit.

[0111] [Note 17] The plasma processing apparatus according to Note 16, wherein the at least one inner additional yoke extends below the at least one outer additional yoke.

[0112] [Note 18] The plasma processing apparatus according to Note 17, wherein the lower surface of the at least one inner electromagnet unit is positioned lower than the lower surface of the at least one outer electromagnet unit.

[0113] [Note 19] The plasma processing apparatus according to any one of Notes 16 to 18, wherein the at least one outer electromagnet unit includes a plurality of outer electromagnet units, and the at least one outer additional yoke includes a plurality of outer additional yokes.

[0114] [Note 20] The plasma processing apparatus according to any one of Notes 13 to 19, wherein the at least one additional yoke is formed separately from the yoke that extends upward from the additional yoke.

[0115] Furthermore, the disclosed embodiments include, for example, the following other embodiments:

[0116] [Note 1] A plasma processing apparatus comprising: a plasma processing chamber having a plasma processing space; a coil through which an electric current for generating a magnetic field flows; a housing made of a high-permeability magnetic material for housing the coil; and an extension made of a high-permeability magnetic material extending from the housing in a direction toward the plasma processing space along a first direction, wherein the length of the extension along the first direction is 0.5 times or more the length of the coil housed in the housing along the first direction.

[0117] [Note 2] The plasma processing apparatus according to Note 1, wherein the extension portion, which is formed separately from the storage portion, is connected to the storage portion.

[0118] [Note 3] The plasma processing apparatus according to Note 1, wherein the storage section and the extension section are formed integrally.

[0119] [Note 4] The plasma processing apparatus according to any one of Notes 1 to 3, wherein the extension portion has a notch in the portion that interferes with the component connected to the plasma processing chamber.

[0120] [Note 5] A plasma processing apparatus according to any one of Notes 1 to 4, comprising a plurality of coils, a first storage section in which a first coil, which is one of the plurality of coils, is stored; a first extension extending from the first storage section in the direction of the plasma processing space along the first direction; a second storage section in which a second coil, which is different from the first coil, is stored; and a second extension extending from the second storage section in the direction of the plasma processing space along the first direction, wherein the length of the second extension along the first direction is different from the length of the first extension along the first direction.

[0121] [Appendix 6] The plasma processing apparatus according to any one of Appendix 1 to 5, further comprising a cooling unit connected to the storage unit for cooling the storage unit.

[0122] [Note 7] The plasma processing apparatus according to Note 6, comprising a plurality of combinations of the coil and the housing, wherein the plurality of housings are arranged in a line on the surface of the cooling section.

[0123] [Note 8] A plasma processing apparatus comprising: a plasma processing chamber having a plasma processing space; a coil through which an electric current for generating a magnetic field flows; a housing made of a high-permeability magnetic material for housing the coil; and an extension made of a high-permeability magnetic material extending from the housing in a direction toward the plasma processing space along a first direction, wherein the extension has a notch in the portion that interferes with a component connected to the plasma processing chamber.

[0124] The substrate processing system according to the present embodiment disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0125] Note that storage sections 51, 52, 53, and 54 are examples of yokes, and extension sections 71, 72, 73, and 74 are examples of additional yokes. The combination of coil 61 and storage section 51 is an example of an inner electromagnet unit, the combination of coil 62 and storage section 52 or the combination of coil 63 and storage section 53 is an example of an intermediate electromagnet unit, and the combination of coil 64 and coil 65 and storage section 54 is an example of an outer electromagnet unit. Extension section 71 or extension section 72 is an example of an inner additional yoke, and extension section 72, extension section 73, or extension section 74 is an example of an intermediate additional yoke. Furthermore, the combination of coil 61 and storage unit 51 may be an example of an inner electromagnet unit, the combination of coil 62 and storage unit 52 or the combination of coil 63 and storage unit 53 may be an example of an outer electromagnet unit, the extension unit 71 or extension unit 72 may be an example of an inner additional yoke, and the extension unit 72, extension unit 73 or extension unit 74 may be an example of an outer additional yoke.

[0126] This application claims priority to Basic Patent Application No. 2025-025175, filed with the Japan Patent Office on February 19, 2025, the entire contents of which are incorporated herein by reference.

[0127] 1 Plasma processing apparatus 2 Control unit 100 Plasma processing system 10 Plasma processing chamber 10s Plasma processing space 13 Shower head 20 Gas supply unit 30 Power supply system 40 Exhaust system 50, 150, 250 Electromagnet unit 51, 52, 53, 54, 251a, 252a, 253a Storage unit 51a, 52a, 53a, 54a Inner cylinder plate 51b, 52b, 53b, 54b Outer cylinder plate 54d Partition plate 51c, 52c, 53c, 54c Top plate 51h, 52h, 53h, 54h1, 54h2 Groove 56 Electromagnet excitation circuit 58 Cooling unit 59 Holding unit 61, 62, 63, 64, 65 Coil 71, 72, 73, 74, 173, 174, 251b, 252b, 253b Extension 173a, 173b, 174a, 174b, 174c Notch 180 Gas introduction 190 Temperature control medium introduction / exit 181, 191 Tip 182, 192, 193 Piping 251, 252, 253 Coil holding part W Substrate

Claims

1. A plasma processing apparatus comprising: a plasma processing chamber; a substrate support portion disposed within the plasma processing chamber; an upper electrode assembly disposed above the substrate support portion; and a magnetic field generating unit disposed above the upper electrode assembly, wherein the magnetic field generating unit comprises a plurality of electromagnet units, each having an upper surface arranged along the same plane, and each electromagnet unit includes an electromagnet and a yoke that at least partially covers the electromagnet; a cooling plate in contact with the upper surface of the plurality of electromagnet units; and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

2. The plasma processing apparatus according to claim 1, wherein the plurality of electromagnet units include at least one inner electromagnet unit, at least one intermediate electromagnet unit surrounding the at least one inner electromagnet unit, and at least one outer electromagnet unit surrounding the at least one intermediate electromagnet unit.

3. The plasma apparatus according to claim 2, wherein the at least one additional yoke includes at least one inner additional yoke extending downward from the at least one inner electromagnet unit.

4. The plasma processing apparatus according to claim 3, wherein the at least one additional yoke includes at least one intermediate additional yoke extending downward from the at least one intermediate electromagnet unit.

5. The plasma processing apparatus according to claim 4, wherein the at least one inner additional yoke extends below the at least one intermediate additional yoke.

6. The plasma processing apparatus according to claim 5, wherein the lower surface of the at least one inner electromagnet unit is positioned lower than the lower surface of the at least one intermediate electromagnet unit.

7. The plasma processing apparatus according to claim 6, wherein the lower surface of the at least one outer electromagnet unit is positioned lower than the lower surface of the at least one intermediate electromagnet unit.

8. The plasma processing apparatus according to any one of claims 4 to 7, wherein the at least one intermediate electromagnet unit comprises a plurality of intermediate electromagnet units, and the at least one intermediate additional yoke comprises a plurality of intermediate additional yokes.

9. The plasma processing apparatus according to claim 1, wherein the vertical dimension of the at least one additional yoke is 0.5 times or more the vertical dimension of the yoke extending upward from the additional yoke.

10. The plasma processing apparatus according to claim 1, wherein the at least one additional yoke is formed separately from the yoke extending upward from the additional yoke.

11. The plasma processing apparatus according to claim 1, wherein the at least one additional yoke is formed integrally with the yoke extending upward from the additional yoke.

12. The plasma processing apparatus according to claim 1, wherein the at least one additional yoke has a notch in the portion that interferes with other components.

13. A plasma processing apparatus comprising: a plasma processing chamber; a magnetic field generating unit disposed above the plasma processing chamber, wherein the magnetic field generating unit comprises a plurality of electromagnet units, each electromagnet unit comprising an electromagnet and a yoke that at least partially covers the electromagnet; and at least one additional yoke extending downward from at least one of the plurality of electromagnet units.

14. The plasma processing apparatus according to claim 13, wherein the plurality of electromagnet units include at least one inner electromagnet unit and at least one outer electromagnet unit surrounding the at least one inner electromagnet unit.

15. The plasma apparatus according to claim 14, wherein the at least one additional yoke includes at least one inner additional yoke extending downward from the at least one inner electromagnet unit.

16. The plasma apparatus according to claim 15, wherein the at least one additional yoke includes at least one outer additional yoke extending downward from the at least one outer electromagnet unit.

17. The plasma processing apparatus according to claim 16, wherein the at least one inner additional yoke extends lower than the at least one outer additional yoke.

18. The plasma processing apparatus according to claim 17, wherein the lower surface of the at least one inner electromagnet unit is positioned lower than the lower surface of the at least one outer electromagnet unit.

19. The plasma processing apparatus according to any one of claims 16 to 18, wherein the at least one outer electromagnet unit comprises a plurality of outer electromagnet units, and the at least one outer additional yoke comprises a plurality of outer additional yokes.

20. The plasma processing apparatus according to any one of claims 13 to 18, wherein the at least one additional yoke is formed separately from the yoke extending upward from the additional yoke.

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