Pre-heat ring structures for alignment, and related liners, chamber kits, processing chambers, and methods

Abstract

The present disclosure relates to pre-heat ring structures for alignment, and related liners, chamber kits, processing chambers, and methods. In one or more embodiments, a chamber kit for disposition in a processing chamber includes a liner. The liner includes a wall, one or more ledges extending inwardly relative to the wall, and a plurality of posts extending relative to the one or more ledges. The plurality of posts are azimuthally spaced from each other by at least 100 degrees. A first post is spaced from a second post by a first angle, and the first post spaced from a third post by a second angle that is different than the first angle. The chamber kit includes a pre-heat ring that includes a plurality of openings formed in an outer region. The plurality of openings are sized and shaped to respectively receive at least one post of the plurality of posts.

Description

PRE-HEAT RING STRUCTURES FOR ALIGNMENT, AND RELATED LINERS, CHAMBER KITS, PROCESSING CHAMBERS, AND METHODS BACKGROUNDField

[0001] The present disclosure relates to pre-heat ring structures for alignment, and related liners, chamber kits, processing chambers, and methods, for semiconductor manufacturing.Description of the Related Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. During processing, various parameters can affect the uniformity of material deposited on the substrate. For example, the temperature of the substrate and / or temperature(s) of processing chamber component(s) can affect deposition uniformity.

[0003] Processing operations can cause thermal expansion of components, which can cause shifting and misalignment of chamber components and thereby interfere with processing. It can be difficult to mitigate such shifting without causing component breakage and / or using additional retention components that can add to complexity.

[0004] Therefore, a need exists for improved processing chambers and related components that facilitate mitigated shifting.SUMMARY

[0005] The present disclosure relates to pre-heat ring structures for alignment, and related liners, chamber kits, processing chambers, and methods, for semiconductor manufacturing.

[0006] In one or more embodiments, a chamber kit for disposition in a processing chamber includes a liner. The liner includes a wall, one or moreledges extending inwardly relative to the wall, and a plurality of posts extending relative to the one or more ledges. At least two of the plurality of posts are azimuthally spaced from each other by at least 100 degrees. A first post is spaced from a second post by a first angle, and the first post spaced from a third post by a second angle that is different than the first angle. The chamber kit includes a pre-heat ring sized and shaped to contact the one or more ledges at an outer region of the pre-heat ring. The pre-heat ring includes a plurality of openings formed in the outer region, and the plurality of openings are sized and shaped to respectively receive at least one post of the plurality of posts.

[0007] In one or more embodiments, a chamber kit for disposition in a processing chamber includes a liner. The liner includes a wall, one or more ledges extending inwardly relative to the wall, and a plurality of posts extending relative to the one or more ledges. The plurality of posts are azimuthally spaced from each other by an angle that is at least 1.5 degrees offset from an equidistant value. The equidistant value is equal to 360 degrees divided by a number of the plurality of posts. The chamber kit includes a pre-heat ring sized and shaped to contact the one or more ledges at an outer region of the preheat ring. The pre-heat ring includes a plurality of openings formed in the outer region. The plurality of openings are sized and shaped to respectively receive at least one post of the plurality of posts.

[0008] In one or more embodiments, a method of substrate processing includes positioning a pre-heat ring on a liner. The positioning includes receiving a plurality of posts of the liner into a plurality of openings of the preheat ring. The plurality of posts are azimuthally spaced from each other by at least 100 degrees. The method includes heating a substrate positioned on a substrate support, and flowing one or more process gases over the pre-heat ring and over the substrate to process the substrate.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber, according to one or more embodiments.

[0011] Figure 2, is a schematic partial top view of the pre-heat ring and the lower liner shown in Figure 1 , according to one or more embodiments.

[0012] Figure 3 is a schematic bottom side view of the pre-heat ring shown in Figure 2, according to one or more embodiments.

[0013] Figure 4 is a schematic top side view of the liner shown in Figure 2, according to one or more embodiments.

[0014] Figure 5 is a schematic perspective cross-sectional view, along Section 5 — 5, of the pre-heat ring and the liner shown in Figure 2, according to one or more embodiments.

[0015] Figure 6 is a schematic perspective partial view of the liner shown in Figure 2 with the pre-heat ring omitted, according to one or more embodiments.

[0016] Figure 7 is a schematic block diagram view of a method of substrate processing, according to one or more embodiments.

[0017] Figure 8 is a schematic top side view of the liner shown in Figure 2, according to one or more embodiments.

[0018] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0019] The present disclosure relates to pre-heat ring structures for alignment, and related liners, chamber kits, processing chambers, and methods, for semiconductor manufacturing.

[0020] The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to embedding, bonding, welding, fusing, melting together, interference fitting, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to integrally forming. The disclosure contemplates that terms such as “couples,” “coupling,” “couple,” and “coupled” may include but are not limited to direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0021] Figure 1 is a schematic side cross-sectional view of a processing chamber 100, according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is utilized to grow an epitaxial film on a substrate 102. The processing chamber 100 creates a cross-flow of precursors across a top surface 150 of the substrate 102. The processing chamber 100 is shown in a processing condition in Figure 1.

[0022] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body is a substrate support 106, an upper plate 108 (such as an upper window, for example an upper dome), a lower plate 110 (such as a lower window, for example a lower dome), a plurality of upper heat sources 141, and a plurality of lower heat sources 143. In one or more embodiments, the upper heat sources 141 include upper lamps and the lower heat sources143 include lower lamps. The present disclosure contemplates that other heat sources may be used (in addition to or in place of the lamps) for the various heat sources described herein. For example, resistive heaters, light emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0023] The substrate support 106 is disposed between the upper plate 108 and the lower plate 110. The substrate support 106 supports the substrate 102. In one or more embodiments, the substrate support 106 includes a susceptor. Other substrate supports (including, for example, a substrate carrier and / or one or more ring segment(s) that support one or more outer regions of the substrate 102) are contemplated by the present disclosure. The plurality of upper heat sources 141 are disposed between the upper plate and a lid 154. The plurality of upper heat sources 141 form a portion of the upper heat source module 155.

[0024] The plurality of lower heat sources 143 are disposed between the lower plate 110 and a floor 152. The plurality of lower heat sources 143 form a portion of a lower heat source module 145. The upper plate 108 is an upper dome and / or is formed of an energy transmissive material, such as quartz. The lower plate 110 is a lower dome and / or is formed of an energy transmissive material, such as quartz.

[0025] An upper volume 136 and a purge volume 138 are formed between the upper plate 108 and the lower plate 110. The upper volume 136 and the purge volume 138 are part of an internal volume defined at least partially by the upper plate 108, the lower plate 110, and one or more liners 111, 163 of the chamber body. In one or more embodiments, the upper volume 136 is a processing volume.

[0026] The internal volume has the substrate support 106 disposed therein. The substrate support 106 includes a top surface 161 on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. In one or more embodiments, the substrate support 106 is connected to the shaft 118 through one or more arms 119 connected to the shaft 118. The present disclosure contemplates that the one or more arms 119 can be omitted, and theshaft 118 can be coupled to the substrate support 106. The present disclosure also contemplates that the one or more arms 119 can be omitted, and the substrate support 106 can be supported by a flat disk. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the shaft 118 and / or the substrate support 106 within the upper volume 136.

[0027] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are each sized to accommodate a lift pin 132 for lifting of the substrate 102 from the substrate support 106 before or after a deposition process is performed. The lift pins 132 may rest on lift pin stops 134 when the substrate support 106 is lowered from a process position to a transfer position. The lift pin stops 134 can include a plurality of arms 139 that attach to a shaft 135.

[0028] The flow module 112 includes one or more gas inlets 114 (e.g., a plurality of gas inlets), one or more purge gas inlets 164 (e.g., a plurality of purge gas inlets), and one or more gas exhaust outlets 116. The one or more gas inlets 114 and the one or more purge gas inlets 164 are disposed on the opposite side of the flow module 112 from the one or more gas exhaust outlets 116.

[0029] A pre-heat ring 117 is disposed below the one or more gas inlets 114 and the one or more gas exhaust outlets 116. The pre-heat ring 117 is disposed above the one or more purge gas inlets 164. The pre-heat ring 117 is disposed at least partially outwardly of the substrate support 106. The one or more liners 111, 163 are disposed on an inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition operations and / or cleaning operations. The gas inlet(s) 114 and the purge gas inlet(s) 164 are each positioned to flow a respective one or more process gases P1 and one or more purge gases P2 parallel to the top surface 150 of a substrate 102 disposed within the upper volume 136. The gas inlet(s) 114 are fluidly connected to one or more process gas sources 151 and one or more cleaninggas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162. The one or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using the one or more process gas sources 151 can include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases P2 supplied using the one or more purge gas sources 162 can include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, the one or more process gases P1 include one or more silicon-containing gases (such as silane and / or silicon phosphide (SiP)) and / or phospine (PH3), and the one or more cleaning gases include hydrochloric acid (HCI).

[0030] The one or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas exhaust outlets 116 and the exhaust pump 157. The exhaust system 178 can assist in the controlled deposition of a layer on the substrate 102. The exhaust system 178 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112.

[0031] The processing chamber 100 includes the one or more liners 111, 163 (e.g., a lower liner 111 and an upper liner 163). The lower liner 111 and the upper liner 163 are disposed inwardly of a sidewall (e.g., the flow module 112 and / or the upper body 156) of the chamber body. The flow module 112 (which can be at least part of the sidewall of the processing chamber 100) includes the one or more gas inlets 114 in fluid communication with the upper volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper liner 163 and a lower liner 111.

[0032] At least one of the liners 111, 163 (shown as the lower liner 111 in Figure 1) includes a wall 166 and one or more ledges 167 extending inwardlyrelative to the wall 166. The one or more ledges 167 support the pre-heat ring 117 at an outer region of the pre-heat ring 117.

[0033] In one or more embodiments, an auxiliary heat source 194 is used in addition to the heat sources 141, 143. In one or more embodiments, the auxiliary heat source 194 includes a laser source (such as a collimated laser source), and the heat sources 141, 143 include lamps.

[0034] During a deposition operation (e.g., an epitaxial growth operation), the one or more process gases P1 flow through the one or more gas inlets 114, through the one or more gaps, and into the upper volume 136 to flow over the substrate 102. During the deposition operation, the pre-heat ring 117 can be heated. The one or more process gases P1 flow over the pre-heat ring 117, which pre-activates the one or more process gases P1 for depositing film on the substrate 102 prior to flowing over the substrate 102.

[0035] The present disclosure also contemplates that the one or more purge gases P2 can be supplied to the purge volume 138 (through the one or more purge gas inlets 164) during the deposition operation, and exhausted from the purge volume 138. The one or more purge gases P2 flow simultaneously with the flowing of the one or more process gases P1. The one or more process gases P1 are exhausted through gaps between the upper liner 163 and the lower liner 111, and through the one or more gas exhaust outlets 116. The one or more purge gases P2 can be exhausted through one or more outlet openings, and through the same one or more gas exhaust outlets 116 as the one or more process gases P1. The present disclosure contemplates that that the one or more purge gases P2 can be separately exhausted through one or more second gas exhaust outlets that are separate from the one or more gas exhaust outlets 116.

[0036] During a cleaning operation, one or more cleaning gases flow through the one or more gas inlets 114, through the one or more gaps (between the upper liner 163 and the lower liner 111), and into the upper volume 136.

[0037] The processing system includes one or more sensors 195, 196, 198 (e.g., temperature sensors) configured to measure parameter(s) (e.g., temperature(s)) within the processing chamber 100. In one or more embodiments, the one or more sensors 195, 196, 198 include a central sensor 196 and one or more outer sensors 195, 198. The controller 190 (described below) can control the one or more sensors 195, 196, 198, 199, and / or one or more heat sources 141 , 143, and can conduct method(s) of adjusting uniformity of substrate processing using at least one of the one or more sensors 195, 196, 198, 199, and / or one or more heat sources 141, 143. In one or more embodiments, one or more sensors 195, 196, 198 each include a pyrometer, such as a pyrometer that includes a silicon sensor. In one or more embodiments, each sensor 195, 196, 198 is an optical sensor, such as an optical pyrometer. The present disclosure contemplates that sensors other than pyrometers may be used, and / or one or more of the sensors 195, 196, 198 can measure properties other than temperature.

[0038] In one or more embodiments, the sensors 195, 196, 198 include one or more upper sensors 196, 198 disposed above the substrate 102 and adjacent the lid 154, and one or more lower sensors 195 disposed below the substrate 102 and adjacent the floor 152. The present disclosure contemplates that at least one of the one or more lower sensors 195 can be vertically aligned below at least one of the upper sensors 196, 196 (such as outer sensor 198).

[0039] Each sensor 195, 196, 198, can be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the system including the process chamber 100 includes any one, any two, or any three of the four illustrated sensors 195, 196, 198. In one or more embodiments, the process chamber 100 includes one or more additional sensors, in addition to the sensors 195, 196, 198. In one or more embodiments, the process chamber 100 may include sensors disposed at different locations and / or with different orientations than the illustrated sensors 195, 196, 198.

[0040] As shown, a controller 190 is in communication with the processing chamber 100 and is used to control processes and methods, such as the operations of the methods described herein.

[0041] The controller 190 is configured to receive data or input as sensor readings from sensor(s) (such as one or more of the sensors 195, 196, 198, 199). The sensors can include, for example: sensors that monitor growth of layer(s) on the substrate 102; and / or sensors that monitor temperatures of the pre-heat ring 117, the substrate 102, the substrate support 106, and / or the liners 111, 163. The controller 190 is equipped with or in communication with a system model of the processing chamber 100. The system model includes a heating model, a temperature uniformity model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters (such as a signal profile (e.g., a temperature profile) of the substrate 102 and / or the substrate support 106, a gas flow rate, a gas pressure, a rotational position of component(s), a heating profile, a coating condition, and / or a cleaning condition) within the processing chamber 100 throughout a deposition operation and / or a cleaning operation. The controller 190 is further configured to store readings and calculations. The readings and calculations include previous sensor readings, such as any previous sensor readings within the processing chamber 100. The readings and calculations further include the stored calculated values from after the sensor readings are measured by the controller 190 and run through the system model. Therefore, the controller 190 is configured to both retrieve stored readings and calculations as well as save readings and calculations for future use. Maintaining previous readings and calculations enables the controller 190 to adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0042] The controller 190 can monitor heating, generate a signal profile (e.g., a temperature profile), identify set(s) of one or more heat sources, adjust a heating profile, adjusting heating power(s) (such as the power supplied by the heat sources 141, 143), estimate an optimized parameter (such as the target temperature), adjust the one or more sensors 195-199, generate an alert on adisplay, halt a deposition operation, initiate a chamber downtime period, delay a subsequent iteration of the deposition operation, initiate a cleaning operation, halt the cleaning operation, and / or otherwise adjust the process recipe.

[0043] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), a memory 191 containing instructions, and support circuits 192 for the CPU 193. The controller 190 controls various items directly, or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicatively coupled to dedicated controllers, and the controller 190 functions as a central controller.

[0044] The controller 190 is of any form of a general-purpose computer processor that is used in an industrial setting for controlling various substrate processing chambers and equipment, and sub-processors thereon or therein. The memory 191, or non-transitory computer readable medium, is one or more of a readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuits 192 of the controller 190 are coupled to the CPU 193 for supporting the CPU 193. The support circuits 192 include cache, power supplies, clock circuits, input / output circuitry and subsystems, and the like. Operational parameters (e.g., target temperature(s) for the pre-heat ring 117 and / or the substrate 102, reading(s), signal difference(s), signal profile(s), heating power(s) (e.g., applied to the one or more of the heat sources 141, 143), adjustment factor(s), threshold ratio(s), range(s) and / or training range(s) with which the signal difference(s) are compared, a cleaning recipe, and / or a processing recipe) and operations are stored in the memory 191 as a software routine that is executed or invoked to turn the controller 190 into a specific purpose controller to control the operations of the various chambers / modules described herein. The controller 190 is configured to conduct any of the operations described herein. The instructions stored on the memory, when executed, cause one or more of the operations described herein (such as the deposition operation) to beconducted in relation to the processing chamber 100. The controller 190 and the processing chamber 100 are at least part of a system for processing substrates.

[0045] The various operations described herein (such as operations of the method 800) can be conducted automatically using the controller 190, or can be conducted automatically or manually with certain operations conducted by a user.

[0046] In one or more embodiments, the controller 190 includes a mass storage device, an input control unit, and a display unit. The controller 190 can monitor the temperature of the pre-heat ring 117, the temperature of the substrate 102, the temperature of the substrate support 106, the process gas flow, and / or the purge gas flow. In one or more embodiments, the controller 190 includes multiple controllers 190, such that the stored readings and calculations and the system model are stored within a separate controller from the controller 190 which controls the operations of the processing chamber 100. In one or more embodiments, all of the system model and the stored readings and calculations are saved within the controller 190.

[0047] The controller 190 is configured to control the deposition, the cleaning, the rotational position, the heating, and gas flow through the processing chamber 100 by providing an output to the controls for the sensors 195, 196, 198, 199, the upper heat sources 141, the lower heat sources 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and / or the exhaust pump 157.

[0048] The controller 190 is configured to adjust the output to the controls based on the sensor readings, the system model, and the stored readings and calculations. The controller 190 includes embedded software and a compensation algorithm to calibrate measurements. The controller 190 can include one or more machine learning algorithms and / or artificial intelligence algorithms that estimate optimized parameters (such as the target temperature(s) for the pre-heat ring 117 and / or the substrate 102) for theuniformity analysis operations, the deposition operations, and / or the cleaning operations.

[0049] The one or more machine learning algorithms and / or artificial intelligence algorithms may implement, adjust and / or refine one or more algorithms, inputs, outputs or variables described above. Additionally or alternatively, the one or more machine learning algorithms and / or artificial intelligence algorithms may rank or prioritize certain aspects of adjustments of the process chamber 100 and / or method(s) relative to other aspects of the process chamber 100 and / or method(s) (such as the method 800). The one or more machine learning algorithms and / or artificial intelligence algorithms may account for other changes within the processing systems such as hardware replacement and / or degradation. In one or more embodiments, the one or more machine learning algorithms and / or artificial intelligence algorithms account for upstream or downstream changes that may occur in the processing system due to variable changes of the process chamber 100 and / or method(s). For example, if variable “A” is adjusted to cause a change in aspect “B” of the process, and such an adjustment unintentionally causes a change in aspect “C” of the process, then the one or more machine learning algorithms and / or artificial intelligence algorithms may take such a change of aspect “C” into account. In such an embodiment, the one or more machine learning algorithms and / or artificial intelligence algorithms embody predictive aspects related to implementing the process chamber 100 and / or the method(s). The predictive aspects can be utilized to preemptively mitigate unintended changes within a processing system.

[0050] The one or more machine learning algorithms and / or artificial intelligence algorithms can use, for example, a regression model (such as a linear regression model) or a clustering technique to estimate optimized parameters. The algorithm can be unsupervised or supervised. The one or more machine learning algorithms and / or artificial intelligence algorithms can optimize, for example, optimized parameters such as target temperature(s), reading(s), signal difference(s), signal profile(s), heating power(s), adjustment factor(s), threshold ratio(s), range(s), and / or training range(s) with which thesignal difference(s) are compared, a cleaning recipe, and / or a processing recipe.

[0051] In one or more embodiments, the controller 190 automatically conducts the operations described herein without the use of one or more machine learning algorithms and / or artificial intelligence algorithms. In one or more embodiments, the controller 190 compares measurements (such as readings and / or signal differences for temperature measurements) to data in a look-up table and / or a library to identify a set of one or more heat sources and / or adjust a heating power. The controller 190 can stored measurements as data in the look-up table and / or the library.

[0052] Figure 2, is a schematic partial top view of the pre-heat ring 117 and the lower liner 111 shown in Figure 1, according to one or more embodiments.

[0053] The pre-heat ring 117 is formed of one of more of: quartz (such as a transparent quartz and / or an opaque quartz, for example white quartz, grey quartz, and / or black quartz), silicon carbide (SiC), graphite (such as graphite coated with SiC), and / or one or more ceramic materials. The one or more ceramic materials can include, for example, alumina (aluminum oxide (AI2O3)), aluminum nitride (AIN), silicon nitride (SiN, for example SisN4), boron nitride (BN), and / or boron carbide (B4C)). In one or more embodiments, the pre-heat ring 117 is formed of an opaque material. In one or more embodiments, the pre-heat ring 117 is formed of SiC. The liner 111 is formed of one of more of: quartz (such as a transparent quartz and / or an opaque quartz, for example white quartz, grey quartz, and / or black quartz), SiC, graphite (such as graphite coated with SiC), and / or the one or more ceramic materials. In one or more embodiments, the liner 111 is formed of a transparent material. In one or more embodiments, the liner 111 is formed of transparent quartz. In one or more embodiments, the pre-heat ring 117 includes a complete ring body (as shown in Figure 3) having an azimuthal angle A1 equal to 360 degrees. The present disclosure contemplates that the pre-heat ring 117 can include one or more ring segments. For example, the pre-heat ring 117 includes one or more notches(one notch 201 is shown in Figure 2) such that one or more portions of the one or more ledges 167 are visible from the top view.

[0054] Figure 3 is a schematic bottom side view of the pre-heat ring 117 shown in Figure 2, according to one or more embodiments.

[0055] The pre-heat ring 117 includes a plurality of openings 301 formed in the outer region (shown by numeral 305 in Figure 3) of the pre-heat ring 117. The outer region 305 is disposed outwardly of a middle boundary line 302 shown in Figure 3. The outer region 305 is part of a planar face (e.g., a bottom face) of the pre-heat ring 117, and the planar face extends between an inner edge 306 and an outer edge 307 of the pre-heat ring 117.

[0056] Figure 4 is a schematic top side view of the liner 111 shown in Figure 2, according to one or more embodiments.

[0057] The liner 111 includes a plurality of posts 401 extending (e.g., upwardly) relative to the one or more ledges 167. The posts 401 can extend (e.g., upwardly) relative to respective extension sections 402 of the one or more ledges 167. The plurality of openings 301 are sized and shaped to respectively receive at least one post of the plurality of posts 401 therein. The reception of the posts 401 in the openings 301 facilitate proper alignment of the pre-heat ring 117 in the chamber 100 when the pre-heat ring 117 is disposed on the liner 111. As an example, the pre-heat ring 117 can be centered relative to the liner 111 and / or the substrate support 106. The orientation of the openings 301a-301 c and the posts 401 a-401 c can also facilitate an alignment that ensures that the pre-heat ring 117 is in the proper rotational position.

[0058] The reception of the posts 401 in the openings 301 also mitigate movement of the pre-heat ring 117 during processing. For example, lateral movement and / or radial movement of the pre-heat ring 117 as a result of thermal expansion is reduced or eliminated. As another example, rotation of the pre-heat ring 117 relative to the liner 111 is reduced or eliminated.

[0059] Referring to Figures 3 and 4, at least two (such as all three) of the openings 301 and the posts 401 can be azimuthally spaced from each other by at least 100 degrees.

[0060] A first post 401 a and a first opening 301 a are spaced from a second post 401 b and a second opening 301 b by a first angle A1. The first post 401 a and the first opening 301 are spaced from a third post 401 c and a third opening 301 c by a second angle A2 that is different than the first angle A1. The second post 401b and the second opening 301b are spaced from the third post 401c and the third opening 301c by a third angle A3 that is different than the second angle A2. The third angle A3 is different than or the same as the first angle A1. In one or more embodiments, the first angle A1 , the second angle A2, and the third angle A3 are each different from each other. In one or more embodiments, the first angle A1 and the third angle A3 are the same, and the second angle A2 is different from the first and third angles A1 , A3. A length L1 and a width W1 of the plurality of openings are larger than a diameter of the plurality of posts.

[0061] The first angle A1 and the third angle A3 are respectively within a range of 120 degrees to 135 degrees. The second angle A2 is within a range of 90 degrees to 120 degrees. In one or more embodiments, the first angle A1 , the second angle A2, and the third angle A3 added together equal about 360 degrees. In one or more embodiments, the first angle A1, the second angle A2, and the third angle A3 are approximately equal to be approximately 120 degrees.

[0062] A difference between the first angle A1 and the second angle A2 can be at least 3.0 degrees, such as 3.0 degrees to 5.0 degrees, for example about 4.0 degrees. A difference between the third angle A3 and the second angle A2 can be at least 3.0 degrees, such as 3.0 degrees to 5.0 degrees, for example about 4.0 degrees. In one or more embodiments, the openings 301a-301c are slotted in shape, such as in the shape of elongated slots. In one or more embodiments, the posts 401a-401c are circular in shape, such as cylindrical in shape, for example in the shape of cylindrical pins. In one or moreembodiments, the first angle A1 is within a range of 117 degrees to 119 degrees. In one or more embodiments, the first angle A1 is within a range of 117.5 degrees to 118.5 degrees, such as about 118 degrees. In one or more embodiments, the second angle A2 is within a range of 122 degrees to 126 degrees. In one or more embodiments, the second angle A2 is within a range of 123 degrees to 125 degrees, such as about 124 degrees.

[0063] The angles A1, A2, A3 can be respectively offset by at least 1.5 degrees from an equidistance value. In one or more embodiments, the angles A1, A2, A3 are respectively offset by 1.5 degrees to 5.0 degrees from the equidistance value. In one or more embodiments, at least two of the angles A1 , A2, A3 are respectively offset by a first value within a range of 1.8 degrees to 2.2 degrees from the equidistance value, and at least one of the angles A1 , A2, A3 is respectively offset by a second value within a range of 3.6 degrees to 4.4 degrees from the equidistance value. In one or more embodiments, the second value is approximately double the first value. The equidistant value is equal to 360 degrees divided by a number of the posts 401a-401c included. In one or more embodiments, a number of three posts 401 a-401 c are included such that the equidistant value is 120 degrees. As shown in Figure 4 and 4, the respective azimuthal angles A1 , A2, A3 are the same for the respective posts 401 a-401 c and the respective openings 301a-301c, such that the posts 401a-401c can be reliably received into the openings 301a-301c.

[0064] Figure 5 is a schematic perspective cross-sectional view, along Section 5 — 5, of the pre-heat ring 117 and the liner 111 shown in Figure 2, according to one or more embodiments.

[0065] The plurality of openings 301a-301c are recessed into a bottom surface 131 of the pre-heat ring, and the outer region 305 (Figure 3) is a portion of the bottom surface 131.

[0066] Figure 6 is a schematic perspective partial view of the liner 111 shown in Figure 2 with the pre-heat ring 117 omitted, according to one or more embodiments.

[0067] Figure 7 is a schematic block diagram view of a method 700 of substrate processing, according to one or more embodiments.

[0068] Operation 701 includes positioning a pre-heat ring on a liner, the positioning includes receiving a plurality of posts (such as the posts 401a-401c) of the liner into a plurality of openings (such as the openings 301 a-301 c) of the pre-heat ring. The pre-heat ring can be retained on the liner using gravity and the posts received in the openings.

[0069] Operation 702 of the method 700 includes heating a substrate positioned on a substrate support to a target temperature. In one or more embodiments, the target temperature is within a range of 200 degrees Celsius to 1 ,400 degrees Celsius. Other target temperature values are contemplated.

[0070] Operation 704 includes flowing one or more process gases over the pre-heat ring and over the substrate to process the substrate. The pre-heat ring can pre-heat the one or more process gases for processing. The substrate can be processed, for example, by depositing film on the substrate and / or by etching film on the substrate.

[0071] Figure 8 is a schematic top side view of the liner 111 shown in Figure 2, according to one or more embodiments.

[0072] In the implementation shown in Figure 8, the extension sections 402 that include the posts 401a-401c are a subset of a plurality of extension sections 402 of the liner 111 (as an example, eight extension sections 402 are shown in Figure 8 that are spaced equidistantly from each other at about 45 degrees). A different number of extension sections 402 can be used. In one or more embodiments, the second angle A2 is within a range of 80 degrees to 100 degrees, such as about 90 degrees. In one or more embodiments, the first angle A1 and the third angle A3 respectively are within a range of 125 degrees to 145 degrees, such as about 135 degrees. Other values are contemplated for the angles A1-A3.

[0073] The present disclosure contemplates that the liner 111 can be retrofitted by placing the posts 401a-401c on the extension sections 402 disposed at the angles A1 -A3. For example, the posts 401 -401 c can be welded or otherwise coupled to or supported on the extension sections 402 disposed at the angles A1-A3.

[0074] Benefits of the present disclosure include mitigating effects of thermal expansion of components during processing; reduced or eliminated misalignment of components (such as reduced or eliminated misalignment of the pre-heat ring 117 relative to the liner 111 and / or the substrate support 106); and simple chamber designs. Benefits also include enhanced processing; enhanced device performance; and increased throughput.

[0075] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations and / or properties of the processing chamber 100, the pre-heat ring 117, the one or more liners (e.g., the lower liner 111 and / or the upper liner 163), the openings 301a-301c, the posts 401a-401c, the arrangement shown in Figure 8, the method 700, and / or the operations described for the deposition operation in relation to Figure 1 may be combined. Moreover, it is contemplated that one or more aspects disclosed herein may include some or all of the aforementioned benefits.

[0076] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:

1. A chamber kit for disposition in a processing chamber, the chamber kit comprising:a liner comprising a wall, one or more ledges extending inwardly relative to the wall, and a plurality of posts extending relative to the one or more ledges, at least two of the plurality of posts azimuthally spaced from each other by at least 100 degrees, a first post spaced from a second post by a first angle, and the first post spaced from a third post by a second angle that is different than the first angle; anda pre-heat ring sized and shaped to contact the one or more ledges at an outer region of the pre-heat ring, the pre-heat ring comprising a plurality of openings formed in the outer region, the plurality of openings sized and shaped to respectively receive at least one post of the plurality of posts.

2. The chamber kit of claim 1 , wherein the liner includes quartz, and the pre-heat ring includes silicon carbide (SiC).

3. The chamber kit of claim 1 , wherein a difference between the first angle and the second angle is at least 3.0 degrees.

4. The chamber kit of claim 1 , wherein the plurality of posts are cylindrical in shape, and the plurality of openings are slotted in shape.

5. The chamber kit of claim 4, wherein a length and a width of the plurality of openings are larger than a diameter of the plurality of posts.

6. The chamber kit of claim 1 , wherein the first angle is within a range of 117 degrees to 119 degrees, and the second angle is within a range of 122 degrees to 126 degrees.

7. The chamber kit of claim 6, wherein the first angle is about 118 degrees.

8. The chamber kit of claim 6, wherein the second angle is about 124 degrees.

9. The chamber kit of claim 1 , wherein the outer region is part of a planar face of the pre-heat ring, the planar face extending between an inner edge and an outer edge of the pre-heat ring.

10. A chamber kit for disposition in a processing chamber, the chamber kit comprising:a liner comprising a wall, one or more ledges extending inwardly relative to the wall, and a plurality of posts extending relative to the one or more ledges, the plurality of posts azimuthally spaced from each other by an angle that is at least 1.5 degrees offset from an equidistant value that is equal to 360 degrees divided by a number of the plurality of posts; anda pre-heat ring sized and shaped to contact the one or more ledges at an outer region of the pre-heat ring, the pre-heat ring comprising a plurality of openings formed in the outer region, the plurality of openings sized and shaped to respectively receive at least one post of the plurality of posts.

11. The chamber kit of claim 10, wherein the angle is within a range of 1.8 degrees to 2.2 degrees.

12. The chamber kit of claim 10, wherein the plurality of posts comprise a first post spaced from a second post by a first angle, and a third post spaced from the first post by a second angle that is different than the first angle.

13. The chamber kit of claim 12, wherein the first angle is within a range of 117 degrees to 119 degrees, and the second angle is within a range of 122 degrees to 126 degrees.

14. The chamber kit of claim 13, wherein the first angle is about 118 degrees.

15. The chamber kit of claim 13, wherein the second angle is about 124 degrees.

16. The chamber kit of claim 10, wherein the number is 3, and the equidistant value is 120 degrees.

17. The chamber kit of claim 10, wherein the plurality of openings are recessed into a bottom surface of the pre-heat ring, and the outer region is a portion of the bottom surface.

18. A method of substrate processing, comprising:positioning a pre-heat ring on a liner, the positioning comprising receiving a plurality of posts of the liner into a plurality of openings of the preheat ring, the plurality of posts azimuthally spaced from each other by at least 100 degrees;heating a substrate positioned on a substrate support; andflowing one or more process gases over the pre-heat ring and over the substrate to process the substrate.

19. The method of claim 18, wherein a first post of the plurality of posts is spaced from a second post by a first angle, and the first post is spaced from a third post by a second angle that is different than the first angle.

20. The method of claim 19, wherein a difference between the first angle and the second angle is at least 3.0 degrees.

Images