Lateral wiring electrodes bridge thickness differences between piezoelectric substrates, simplifying terminal formation and reducing manufacturing complexity.
A layered structure uses discrete subregions to apply localized stress for improved epitaxial growth.
Segmented holders with movable arms constrain phasing lines within grooves to stabilize impedance matching and reduce signal loss.
Variable bump sizes manage thermal stress while maintaining compact footprint and heat dissipation.
Piezoelectric ladder filter uses circular resonator arrangement to reduce device dimensions.
A quartz vibrator device incorporates a thermistor element overlapping the vibration element on an intermediate substrate.
Relocating via holes outside the planar coil area frees magnetic layer space, increasing impedance without enlarging the component.
Merging single-input single-output band-pass filters into a dual input dual output unit reduces passive component count and device complexity.
A hybrid surface acoustic wave structure uses a trapping layer to suppress parasitic waves and improve thermal stability.
Chlorine-based dry etching creates vertical sidewalls in aluminum nitride resonators by eliminating passivating agents that hinder anisotropic etching.
Tilting the piezoelectric layer's polarization angle reduces motional impedance while maintaining a compact resonator footprint.
Segmented insulating films allow solder bumps to extend during reflow, resolving pitch and accuracy trade-offs.
A lead terminal supports a resonator package via conductive bonding to absorb external impacts.
Thinning and removing molding compound from a substrate creates cavities for inserting sensitive dies, preventing thermal damage during packaging.
Curved surfaces between adjacent vibration portions isolate heat sources, reducing thermoelastic damping and improving Q values.
Non-uniform IDT electrode pitch gradients suppress low-frequency ripples, ensuring reliable isolation in compact mobile front-end circuits.
Curved tether geometries distribute etching stress during sacrificial layer removal, preventing physical damage to suspended piezoelectric structures.
A bulk-acoustic wave filter uses anti-series shunt resonators to reduce insertion loss.
A beam-steered diffractive grating system introduces relative phase delay in an optical beam for continuous time delay tuning.
A semiconductor module uses a frame cavity and sealing device to reduce footprint.
An aluminum nitride substrate confines wave energy to limit spurious modes and improve thermal matching in high-power surface acoustic wave filters.
Through-electrodes contact electronic component side surfaces to anchor the chip within a resin structure.
A layer acoustic wave device integrates an isolation layer with higher acoustic impedance to constrain particle displacement on the top surface.
Differential dielectric layer thickness in ladder-type SAW resonators suppresses pass band ripple while maintaining steep filter characteristics.
A ground pattern electrically separates transmit filters and receive pads to inhibit capacitive coupling and improve isolation characteristics.
Asymmetric inner and outer plate lengths suppress spurious modes while maintaining high quality factors.
Deep level impurity atoms compensate thermal donors to maintain stable high resistivity in Czochralski silicon wafers.
Fabricating bulk acoustic wave filters on glass substrates alongside passive-on-glass devices reduces costs while enhancing broadband performance.
A gyro vibrator element sets specific frequency relationships between drive and unwanted modes to suppress excitation.
Gradient electrode finger widths in acoustic wave device reflectors suppress stop band responses.
A controller generates a multi-component drive signal to produce pump oscillations for parametric amplification.
Segmented tunable filters resolve phase noise versus mode spacing trade-offs in radar systems.
A sheet with a space maintaining layer seals circuit members while holding internal volume.
A MEMS resonator uses dual silicon oxide layers with specific thickness ratios to stabilize resonance frequency.
A crystal vibration device uses conductive adhesive layers to support a rectangular plate unit in a cantilever manner.
A composite adhesive layer bonds electronic component bodies to sealing members using mixed organic and inorganic fillers.
A wiring electrode with a narrower edge width enables clean splitting of the piezoelectric body during manufacturing.
Dual temperature controllers heat the oscillator circuit element to reduce external temperature fluctuations and improve reliability.
Confinement layers reduce propagation loss while varying azimuths adjust bandwidth without adding external capacity.
Subthreshold biasing reduces power consumption below 200 nA while maintaining stability across temperature and process variations.
Variable filler content in the sealing resin matches local thermal expansion, reducing element substrate deformation and thermal stress.
A filter uses an inductor and series resonator to form an attenuation pole.
Segmenting coils and applying dynamic switching multiplies loop voltage, bypassing capacitor rating limits.
Photosensitive composition with cationic initiator suppresses aluminum wire corrosion in hollow SAW filter packages.
Asymmetric polygonal cavity patterns disrupt transverse parasitic wave reflections, improving quality factor and enabling CMOS integration.
Adjusting parallel arm resonator capacitance and frequency improves isolation characteristics while reducing device size.
Embedding an active die in a shielded cavity minimizes electromagnetic interference while reducing package volume.
Acoustically isolated Lamb wave resonators detect diagonal strain to resolve the trade-off between wireless operation and large sensor footprint.
Selective epitaxy of silicon germanium sacrificial layers enables monocrystalline vibrating structures that improve mechanical quality while reducing SOI costs.
Selective oxide removal on high-rigidity metal layers enables reliable eutectic bonding while protecting piezo-resonator oscillation characteristics.