Lapping Machines TRIZ Cases

A polishing pad incorporates a light transmitting region to enable optical displacement detection of surface changes.

Non-contact heat exchanger regulates polishing pad temperature by adjusting separation distance, preventing substrate scratches caused by dirt accumulation.

Dynamic alignment of resonant circuits maintains electromagnetic coupling during wheel wear, ensuring reliable data transmission in dusty environments.

Using a roughened silicon dummy substrate reduces polishing tool conditioning time from hours to under one hour.

Ultrasonic agitation cleans CMP brush members, preventing contamination accumulation that reduces semiconductor wafer yield.

Identify eddy current sensor trajectory using 3D signal maps and real-time profile matching to monitor substrate polishing progress accurately.

Coordinate estimation and reflected light waveforms to measure sub-100 nm films, overcoming low spectroscopic reflectance fluctuations.

Multilayer CMP pad uses densified subpad perimeter to block fluid leakage into porous layers, ensuring consistent polishing performance.

Patterned flexible windows reduce deflection and contact pressure while maintaining optical signal clarity for endpoint detection.

A metal or ceramic stress distributing plate sits between an air bag and a wafer to distribute pressure uniformly.

An in-situ acoustic emission monitoring system detects substrate deformation signals through a waveguide to determine the polishing endpoint.

A laminated membrane structure forms pressure chambers without complex molds.

A dressing device uses a rotatable holder and housing with internal flow passages to supply and suction process liquid without contact seals.

Inclined fixing flaps on a CMP membrane generate compensation force to maintain uniform substrate edge pressure despite retainer ring wear.

Multi-directional light irradiation and reception measure polishing pad surface properties to optimize dressing conditions and extend dresser life.

Organic acid and oxidizing agent in processing fluid suppress metal ductility to eliminate burr formation and simplify production steps.

Cleaning the polishing pad before measuring its surface properties eliminates interference from dust and liquid, enabling accurate dressing control.

Non-circular geometry between storage portion and clamp band transmits rotation, enabling precise grinding of works lacking recesses.

Porous protrusions in the pattern layer maintain uniform surface roughness and enhance removal rates during semiconductor polishing.

Double-side planarization with a curable reference layer reduces surface waves and improves nanotopography quality after high-speed slicing.

Multi-layer retaining ring with varying hardness applies pressure to semiconductor wafers during chemical mechanical polishing.

A substrate processing apparatus uses a holding member to switch between two dressing states for maintaining surface sharpness.

A cleaning apparatus uses a weighted abrasive disk to remove pedestal buildup.

Tilted second spray unit directs cleaning liquid outward to prevent particle re-adhesion at the center, improving semiconductor yield.

Fluorescent adhesive markers on CMP platens enable precise spot-cleaning of residue glue, preventing surface planarity defects.

Laser reflection analysis measures pad surface topography to resolve the contradiction between high measurement precision and indirect torque interference.

Opposite electrostatic charges on conductive rods remove charged abrasive particles, resolving defects caused by static adhesion.

Inverting substrate orientation allows larger pads and reduces system footprint, increasing CMP throughput.

A controller varies polishing temperature based on in-situ material signals to manage substrate surface conditions.

A two-step silicon wafer polishing method adjusts pressure and speed to optimize surface finish.

A polyurethane polishing pad with fixed abrasive grains polishes silicon carbide substrates.

Bidirectional rotation of distinct polishing pad regions creates localized pressure zones that correct substrate polishing distribution deviations.