Solid-State Devices TRIZ Cases

Carbon fiber reinforced plastic panels bonded to a foam core create a rigid, portable x-ray detector that withstands impacts without heavy metal enclosures.

A photon counting semiconductor detector uses segmented steering electrodes and spatially modulated doping to guide charge carriers toward collecting anodes.

Machined substrate cups and a transparent solder mask increase LED brightness by reducing light absorption loss.

Embedding passive elements in substrate grooves reduces device height and size while maintaining electrical connectivity.

A thermal kinetic inductance detector uses superconducting resonators to measure x-ray photon energy via temperature changes.

Biasing a transparent gate conductor creates a hole-rich accumulation region that captures short wavelength light charges without complex implant engineering.

Nested subjacent transistors divert electrostatic discharge current without compromising integration density.

Liquid capillary forces self-align microchip pads to transfer substrates, resolving precision issues in LED display manufacturing.

Composite dielectric layers replace metal films in vertical LEDs to boost light extraction while blocking leakage current.

AlN and AlGaN buffer layers reduce lattice mismatch strain between nitride semiconductors and silicon substrates.

Widened second electrodes overlap bank layers between subpixels, preventing unwanted electric fields that cause misalignment of light emitting elements.

A composite optical structure uses high-refractive-index members to guide light beams into photoelectric conversion portions.

Insulation layer pattern prevents electrical connection between dummy cell strings and bit lines in phase change memory devices.

Applying a gate bias voltage to gated phase-change memory cells increases cell resistance, reducing the RESET current required and lowering power dissipation.

A display panel with a through hole and an anti-reflective film featuring a light-transmitting structure covering the hole.

A display panel structure uses color resisting units to partially cover light emitting layer projections for improved optical performance.

Replacing opaque metal with transparent semiconductors in the etching-stop layer increases light transmission and improves display brightness.

A disparity barrier rib layer generates image disparity directly on the encapsulation thin film of an organic light emitting diode display.

An organic buffer layer cushions support pillars to prevent crushing damage and dark spots during impact tests.

Via holes bridge transparent and gate metal electrodes in array substrates, preventing delamination-induced signal loss.

Inkjet printed epoxy oxetane composition creates a moisture resistant barrier that preserves device flexibility and hardness.

A segmented display device uses a compensation panel with arc edges to form a circular display region.

Convex protection layer shapes optical paths over air spacers to isolate micro lenses and prevent crosstalk.

Strained capping layers tailor surface orientations to boost electron and hole mobility in FinFET channels.

A silicon carbide hetero junction device uses a triple contact point structure to form an inversion layer for current passage.

A filter collimator combines interference and absorption films to direct light signals toward a photodiode.

Integrating wave absorbers at aperture sides manages viewing angles without extra films, reducing power consumption and preventing thickness increases.

Segmented quantum dot photodetectors generate opposite current changes to improve signal-to-noise ratio without requiring external amplifiers.

Replacing vacuum-deposited layers with a self-assembled chiral liquid crystal structure reduces manufacturing costs while maintaining energy efficiency.

A barrier wall limits irradiation angles to enhance contrast, preventing glare between adjacent vehicle headlamp regions.

A thin film transistor uses a semiconducting polymer and insulating polymer to enhance mobility.

A nanostructure semiconductor light emitting device incorporates quantum wells with varying indium composition ratios to achieve multi-wavelength emission.

Built-in pin cavities spray antistatic liquid to form a conductive film, preventing electrostatic discharge damage on TFT-LCD substrates.

Segmented retaining walls with buffer structures prevent film detachment and moisture intrusion in flexible OLED displays.

Columnar parts support staircase-shaped electrode layers with air gaps to reduce interconnect capacitance and suppress threshold variation.

Segmented electrode branches eliminate gaps between solder pads and diodes, increasing backlight luminance while reducing module thickness.

An amphipathic second pixel defining layer confines organic ink via hydrophobic surfaces, preventing diffusion and improving print quality.

Aluminum nitride buffer layer prevents cracks and melt-back during cooling by reducing thermal expansion mismatch and chemical reactions.

An internal metal gate structure segments the dielectric layer in a ferroelectric tunnel junction to reduce programming voltage.

Stacking a smart chip under a memory chip on a carrier eliminates bulky batteries by harvesting RF or optical energy for continuous low-power operation.

Plasma treatment removes Bosch process scallops from via hole sidewalls, ensuring homogeneous film coverage and preventing abnormal conductive material growth.

Segmented metal and substrate rings block digital noise interference without electromagnetic coupling that degrades inductor reliability.

A wiring structure connects transparent conductive films to metal layers using specific coverage patterns on end surfaces.

A Ge-Se-Sb chalcogenide switching material replaces arsenic in variable resistance memory devices.

A transparent ceramic phosphor converts ultraviolet light to visible wavelengths while maintaining high transmission.

A stretchable display device uses segmented light emitting diodes with color conversion and transmission layers to optimize optical output.

Dummy memory gate electrodes mask ion implantation to form diffusion regions, preventing impurity damage to the ONO film and improving device reliability.

A 3D image sensor uses vertical trenches to expand the photo-detecting area within limited pixel space.