This invention relates to a redefinable planar
microwave device based on
vanadium dioxide
phase change thin film, belonging to the field of
microwave device technology. It includes a
phase change patch array, a
dielectric substrate, and a
metal ground plane connected in sequence. The
phase change patch array comprises several uniformly arranged phase change thin film blocks, with conductive sponges between adjacent blocks. One end of the phase change
patch array is connected to a
transmission line and an input port, and the other end is connected to a reconfigurable
transmission line and a reconfiguration port. The phase change thin film blocks, the
transmission line, and the reconfigurable transmission line are all made of
vanadium dioxide. When the transmission line, the reconfigurable transmission line, and the phase change thin film blocks are heated to 68–72°C in different combinations, the
vanadium dioxide undergoes a
phase transition, changing from a non-metallic state to a metallic state. At this time, the device
surface structure is divided into a phase change region and a non-phase change region. The phase change region effectively replaces the
microstrip metal, forming two types of A-shaped planar
microstrip patch antennas, two types of
microwave planar serpentine inductors, and a planar
microstrip capacitor, respectively, thus creating redefinable planar microwave devices.