The invention relates to a
perovskite thin film prepared by a low-pressure vacuum
vapor phase, a
solar cell and a method. The method comprises the following steps: S1, depositing an inorganic precursor on a charge
transport layer of a substrate by using a physical
vapor phase method; s2, gasifying the first
ammonium halide salt under a
low vacuum condition and diffusing the gasified first
ammonium halide salt into the inorganic precursor to form a first
perovskite thin film; and / or S3, gasifying the second
ammonium halide salt under a
low vacuum condition and diffusing the gasified second ammonium halide salt into the first
perovskite thin film to form a second perovskite thin film; and / or S4, gasifying the third ammonium halide salt under a
low vacuum condition and diffusing the gasified third ammonium halide salt into the second perovskite thin film to form a third perovskite thin film; wherein at least one of the step S2, the step S3 and the step S4 is selected. According to the method, continuous
solid-gas reaction is carried out on the ammonium halide salt gasified step by step and the inorganic precursor, cross
contamination of an organic source is reduced, the
utilization rate of an organic material is increased, and the obtained perovskite thin film is uniform in component, high in product yield and good in
repeatability.