Method for controlling concentration of silicon wafer etching solution, control device and control system

Abstract

The embodiments of the invention provide a method for controlling concentration of silicon wafer etching solution, a control device and a control system. The method includes the following steps: determining a first change value, wherein the first change value represents the difference between the actual weight of silicon wafers before etching and the actual weight of the silicon wafers after etching; comparing the first change value with a first preset value to obtain a comparison result, wherein the first preset value represents the theoretical value of weight change of the silicon wafers before and after etching; and controlling the concentration of the etching solution of the silicon wafers according to the comparison result. In the embodiments of the invention, the concentration of thesilicon wafer etching solution can be accurately monitored by taking the actual value of weight change of the silicon wafers before and after etching and the theoretical value of weight change of thesilicon wafers before and after etching as the judgment basis of the concentration control of the etching solution of the silicon wafers, so that the problem of detection abnormality of a conductivity concentration meter caused by the introduction of impurities into the etching solution after the etching of silicon wafers is avoided, and the processing quality of silicon wafers is ensured.

Description

technical field [0001] The embodiments of the present invention relate to the field of silicon wafer production and manufacturing, and in particular to a method for controlling the concentration of a silicon wafer etching solution, a control device and a control system. Background technique [0002] In the traditional etching process, potassium hydroxide or hydrofluoric acid is used to etch silicon wafers, and the concentration of the etching solution is usually measured by a solution conductivity concentration meter. [0003] Since the etching solution will be repeatedly used in the equipment, a large amount of silicate and impurities will be dissolved in the etching solution, which will affect the measurement of the concentration of the etching solution by the concentration meter, resulting in a decrease in the etching efficiency of the silicon wafer and the amount of etching removal. Reduced, reducing the quality of silicon wafers. Contents of the invention [0004] An...

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Problems solved by technology

[0004] An object of the embodiments of the present invention is to provide a method, control equipment and control system for controlling the concentration of the silicon wafer etching solution, so as to solve the problem of inaccurate measurement results of the concentration meter measuring the etching solution concentration of silicon wafers

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