Resin composition

Abstract

To provide a resin composition which can suppress warping of a cured product and has excellent adhesion to a load in the vertical direction of a cured product film after environmental testing. The solution is a resin composition containing (A) an epoxy resin, (B) a (meth)acrylic polymer which is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler, wherein the (A) component contains (A-1) a glycidyl amine type epoxy resin.

Description

TECHNICAL FIELD

[0001] The present application relates to a resin composition comprising an epoxy resin and a curing agent, a cured product of the above resin composition, a resin sheet comprising the above resin composition, a circuit substrate comprising the above cured product, a semiconductor chip package comprising the above cured product, and a semiconductor device provided with the above semiconductor chip package. BACKGROUND

[0002] In recent years, demand for small high-function electronic devices such as smartphones and tablet devices has increased, and along with this, further high functionality is required for insulating materials for semiconductor chip packages used in these small electronic devices. Such an insulating layer is known to be formed by curing a resin composition (see, for example, Patent Document 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Laid-Open No. 2017-008312 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] In recent years, particularly, smaller semiconductor chip packages are required, and thus, it is required that the thickness of the insulating layer and sealing material for semiconductor chip packages, and the silicon chip itself be thinner. Therefore, it is desirable to develop an insulating layer that can suppress warping even if the thickness is thin.

[0008] However, a thin film can have difficulty in maintaining adhesion strength due to a decrease in the absolute amount of the resin component, and particularly, for a resin material used for such a use, adhesion strength against a load in the vertical direction of the thin film is highly valued.

[0009] The present application has been achieved in order to solve the above-described problems, and an object of the present application is to provide a resin composition that can suppress warping of a cured product and has excellent adhesion against a load in the vertical direction of a cured product film after environmental testing.

[0010] MEANS FOR SOLVING THE PROBLEMS

[0011] In order to solve the problems of the present application, the present inventors and others have conducted intensive studies, and as a result, have found that by including (A-1) a glycidyl amine type epoxy resin and (B) a (meth) acrylic polymer that is in a liquid state at 25°C in a resin composition, warping of a cured product can be suppressed, and excellent adhesion against a load in the vertical direction of a cured product film after environmental testing can also be obtained, thereby completing the present application.

[0012] That is, the present application includes the following,

[0013] [1] A resin composition containing (A) an epoxy resin, (B) a (meth) acrylic polymer that is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler, wherein the (A) component comprises (A-1) a glycidyl amine type epoxy resin;

[0014] [2] The resin composition according to the above [1], wherein the (A-1) component is a difunctional or trifunctional glycidyl amine type epoxy resin;

[0015] [3] The resin composition according to the above [1] or [2], wherein the content of the (A-1) component is 20 mass% or more and 80 mass% or less, when the non-volatile components other than the (D) component in the resin composition are taken as 100 mass%;

[0016] [4] The resin composition according to any one of the above [1] to [3], wherein the content of the (B) component is 0.5 mass% or more and 20 mass% or less, when the non-volatile components other than the (D) component in the resin composition are taken as 100 mass%;

[0017] [5] The resin composition according to any one of the above [1] to [4], wherein the (C) component is a curing agent selected from the group consisting of phenol-based curing agents, naphthol-based curing agents, acid anhydride-based curing agents, amine-based curing agents, and imidazole-based curing agents;

[0018] [6] The resin composition according to any one of the above [1] to [5], wherein the content of the (D) component is 70 mass% or more, when the total non-volatile components in the resin composition are taken as 100 mass%;

[0019] [7] The resin composition according to any one of the above [1] to [6], which is used for forming an insulating layer of a semiconductor chip package;

[0020] [8] The resin composition according to any one of the above [1] to [6], which is used for forming an insulating layer of a circuit substrate;

[0021] [9] The resin composition according to any one of the above [1] to [6], which is used for sealing a semiconductor chip of a semiconductor chip package;

[0022]

[10] A cured product which is a cured product of the resin composition according to any one of the above [1] to [9];

[0023]

[11] A resin sheet having a support body, and a resin composition layer comprising the resin composition according to any one of the above [1] to [9] provided on the support body;

[0024]

[12] A circuit substrate including an insulating layer formed of a cured product of the resin composition described in any one of the above [1] to [9];

[0025]

[13] A semiconductor chip package including the circuit substrate described in the above

[12] , and a semiconductor chip mounted on the circuit substrate;

[0026]

[14] A semiconductor chip package including a semiconductor chip, and a cured product of the resin composition described in any one of the above [1] to [9] that seals the semiconductor chip;

[0027]

[15] A semiconductor device provided with the semiconductor chip package described in the above

[13] or

[14] .

[0028] Effects of the Invention

[0029] If the present invention is employed, it is possible to provide a resin composition that can suppress warping of a cured product and has excellent adhesion to a load in the vertical direction of a cured product film after environmental testing, a cured product of the resin composition, a resin sheet including the resin composition, a circuit substrate including the cured product, a semiconductor chip package including the cured product, and a semiconductor device provided with the semiconductor chip package. DETAILED DESCRIPTION

[0030] Hereinafter, the present invention will be described in detail in conjunction with preferred embodiments thereof. However, the present invention is not limited to the following embodiments and examples, and can be arbitrarily changed within the scope of the claims of the present invention and equivalents thereof.

[0031] <Resin Composition>

[0032] The resin composition of the present invention contains (A) an epoxy resin, (B) a (meth)acrylic polymer that is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler material. The (A) component contains (A-1) a glycidyl amine type epoxy resin.

[0033] By using such a resin composition, warping of a cured product can be suppressed, and excellent adhesion to a load in the vertical direction of a cured product film after environmental testing can be achieved.

[0034] The resin composition of the present invention can contain arbitrary components in addition to (A) an epoxy resin, (B) a (meth)acrylic polymer that is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler material. As the arbitrary components, for example, (E) an organic solvent and (F) other additives can be cited. Hereinafter, each component contained in the resin composition will be described in detail.

[0035] <(A) Epoxy Resin>

[0036] The resin composition of the present application contains (A) an epoxy resin. The content of the (A) component is not particularly limited, and when the nonvolatile component in the resin composition excluding the (D) component is taken as 100% by mass, it is preferably 10% by mass or more, more preferably 20% by mass or more, further more preferably 30% by mass or more, and particularly preferably 35% by mass or more, from the viewpoint of significantly obtaining the desired effects of the present application. From the viewpoint of significantly obtaining the desired effects of the present application, the upper limit is preferably 95% by mass or less, more preferably 92% by mass or less, further more preferably 90% by mass or less, and particularly preferably 88% by mass or less.

[0037] <(A-1) Glycidyl Amine Type Epoxy Resin>

[0038] The (A) component contains (A-1) a glycidyl amine type epoxy resin. The (A-1) glycidyl amine type epoxy resin refers to an epoxy resin having at least one glycidyl amino group and / or diglycidyl amino group. The glycidyl amino group contains one epoxy group, and the diglycidyl amino group contains two epoxy groups. By using the (A-1) glycidyl amine type epoxy resin, the glass transition temperature (Tg) of the cured product of the resin composition can be increased to improve the heat resistance, the mechanical strength of the cured product can be increased, and the moisture resistance can be improved.

[0039] From the viewpoint of obtaining a cured product having excellent heat resistance, the (A-1) glycidyl amine type epoxy resin is preferably a difunctional or more glycidyl amine type epoxy resin having two or more epoxy groups in one molecule, and more preferably a difunctional or trifunctional glycidyl amine type epoxy resin having two or three epoxy groups in one molecule. Here, the epoxy group is not limited to the epoxy group derived from the glycidyl amino group and the diglycidyl amino group, but can include an epoxy group derived from a glycidyl oxy group, etc. When the nonvolatile component of the glycidyl amine type epoxy resin is taken as 100% by mass, from the viewpoint of improving the heat resistance of the cured product, the proportion of the difunctional or more glycidyl amine type epoxy resin is preferably 50% by mass or more, more preferably 60% by mass or more, and further more preferably 70% by mass or more.

[0040] From the viewpoint of further improving the heat resistance and further reducing the linear thermal expansion coefficient, the (A-1) component is preferably a molecule having one or more aromatic rings. In the present specification, the aromatic ring refers to an aromatic carbocyclic ring such as a benzene ring or naphthalene ring, or an aromatic heterocyclic ring such as a pyridine ring, pyrrole ring, furan ring, or thiophene ring. In the case where the molecule has two or more aromatic rings, the aromatic rings can be directly bonded to each other or bonded to each other via an oxygen atom, an alkylene group, a combination thereof, or the like.

[0041] In the present specification, an alkylene group refers to a bivalent aliphatic saturated hydrocarbon group which is straight-chained or branched. It is preferable that the alkylene group have 1 to 10 carbon atoms, and more preferable that the alkylene group have 1 to 5 carbon atoms. As the alkylene group, for example, methylene, ethylene, propylene, butylene, pentylene, hexylene, 1,1-dimethylethylene, and the like can be exemplified, and the combination position thereof is not particularly limited.

[0042] In the component (A-1), the glycidylamino group and the diglycidylamino group can be directly bonded to the aromatic ring. The aromatic ring can have other substituents in addition to the glycidylamino group and the diglycidylamino group. Here, as the other substituents, for example, a monovalent epoxy group-containing group, a monovalent hydrocarbon group, and the like can be exemplified. As the monovalent epoxy group-containing group, a glycidyloxy group, and the like can be exemplified. As the monovalent hydrocarbon group, for example, an alkyl group, an aryl group, and the like can be exemplified.

[0043] In the present specification, an alkyl group refers to a monovalent aliphatic saturated hydrocarbon group which is straight-chained or branched. It is preferable that the alkyl group have 1 to 10 carbon atoms, and more preferable that the alkyl group have 1 to 5 carbon atoms. As the alkyl group, for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a t-butyl group, a pentyl group, an isopentyl group, a neopentyl group, a 1-ethylpropyl group, and the like can be exemplified.

[0044] In the present specification, an aryl group refers to a monovalent aromatic hydrocarbon group. It is preferable that the aryl group have 6 to 14 carbon atoms, and more preferable that the aryl group have 6 to 10 carbon atoms. As the aryl group, for example, a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a biphenyl group, a 2-anthryl group, and the like can be exemplified.

[0045] The component (A-1) can be used alone or in combination of two or more.

[0046] From the viewpoint of significantly obtaining the desired effects of the present application, as examples of the preferable component (A-1), compounds represented by the following formula (A-1) can be exemplified.

[0047] [Chemical Formula 1]

[0048] .

[0049] In formula (A-1), n independently represents an integer of 0 to 4. Among them, n is preferably an integer of 0 to 3, more preferably an integer of 0 to 2, further more preferably 0 or 1, and particularly preferably 1. In formula (A-1), m represents an integer of 1 to 3. Among them, m is preferably 1 or 2, and more preferably 1.

[0050] In formula (A-1), R 11 independently represent a monovalent epoxy group-containing group such as a glycidyloxy group, and a monovalent hydrocarbon group such as an alkyl group and an aryl group. R 11 In the case where R 11R is preferably bonded to the para position with respect to the bonding site of the nitrogen atom to the benzene ring. In addition, R 11 R is preferably bonded to the para position with respect to the bonding site of the nitrogen atom to the benzene ring. In addition, R 11 R is preferably bonded to the para position with respect to the bonding site of the nitrogen atom to the benzene ring. In addition, R

[0051] In formula (A-1), R 12 represents a hydrogen atom or a 1- to 3-valent hydrocarbon group. As the divalent hydrocarbon group, an alkylene group, an arylene group, and the like can be given. In the case where m is 1, from the viewpoint of obtaining the desired effects of the present application, R 12 is preferably an alkyl group, and more preferably a methyl group. In addition, in the case where m is 2, from the viewpoint of obtaining the desired effects of the present application, R 12 is preferably an alkylene group, and more preferably a methylene group.

[0052] In the present specification, an arylene group refers to a divalent aromatic hydrocarbon group. An arylene group having 6 to 14 carbon atoms is preferable, and an arylene group having 6 to 10 carbon atoms is more preferable. As the arylene group, a phenylene group, a naphthylene group, a biphenylene group, and the like can be given, and the bonding position thereof is not particularly limited.

[0053] As specific examples of the (A-1) component, "630", "630LSD" (formula (A-2) described below) manufactured by Mitsubishi Chemical Corporation, "EP-3980S" (formula (A-3) described below), "EP3950S", "EP3950L" manufactured by ADEKA Corporation, "ELM-100", "ELM-100H", "ELM-434", "ELM-434L" manufactured by Sumitomo Chemical Company Limited, and the like can be given. These can be used alone as one kind, or two or more kinds in combination.

[0054] [Chemical Formula 2]

[0055] .

[0056] [Chemical Formula 3]

[0057] .

[0058] The epoxy equivalent of the glycidyl amine type epoxy resin of (A-1) is preferably 50 to 5000 g / eq, more preferably 50 to 3000 g / eq, further more preferably 60 to 2000 g / eq, and particularly preferably 70 to 1000 g / eq. By making the epoxy equivalent of the glycidyl amine type epoxy resin within the range described above, the crosslinking density of the cured product of the resin composition is sufficient, and an insulating layer having a small surface roughness can be obtained.

[0059] The weight average molecular weight (Mw) of the glycidyl amine type epoxy resin (A-1) is preferably 100 to 5,000, more preferably 250 to 3,000, and even more preferably 400 to 1,500. The weight average molecular weight of the resin can be measured by gel permeation chromatography (GPC) method as a value converted to polystyrene.

[0060] The content of the component (A-1) is not particularly limited, and when the non-volatile components in the resin composition excluding the component (D) is taken as 100% by mass, it is preferably 10% by mass or more, more preferably 15% by mass or more, even more preferably 20% by mass or more, and particularly preferably 25% by mass or more, from the viewpoint of significantly obtaining the desired effects of the present application. The upper limit thereof is preferably 90% by mass or less, more preferably 85% by mass or less, even more preferably 80% by mass or less, and particularly preferably 75% by mass or less, from the viewpoint of significantly obtaining the desired effects of the present application.

[0061] The content of the component (A-1) with respect to the total amount of the component (A) is not particularly limited, and when the component (A) in the resin composition is taken as 100% by mass, it is preferably 10% by mass or more, more preferably 20% by mass or more, even more preferably 30% by mass or more, and particularly preferably 40% by mass or more, from the viewpoint of significantly obtaining the desired effects of the present application. The upper limit thereof is not particularly limited, and can be, for example, 100% by mass or less, 90% by mass or less, 80% by mass or less, 70% by mass or less, or the like.

[0062]

[0063] The epoxy resin (A) can further include other arbitrary epoxy resins in addition to the glycidyl amine type epoxy resin (A-1). As the other arbitrary epoxy resins, for example, a bisphenol type epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a bisphenol AF type epoxy resin, a dicyclopentadiene type epoxy resin, a trisphenol type epoxy resin, a naphthol novolak type epoxy resin, a phenol novolak type epoxy resin, a t-butyl catechol type epoxy resin, a naphthalene type epoxy resin, a naphthol type epoxy resin, an anthracene type epoxy resin, a glycidyl ester type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a linear aliphatic epoxy resin, an epoxy resin having a butadiene structure, an alicyclic epoxy resin, a heterocyclic type epoxy resin, a spiro ring-containing epoxy resin, a cyclohexane type epoxy resin, a cyclohexane dimethanol type epoxy resin, a naphthalene ether type epoxy resin, a trimethylol type epoxy resin, a tetraphenyl ethane type epoxy resin, and the like can be exemplified. The other arbitrary epoxy resins can be used alone or in combination of two or more.

[0064] ​As the other arbitrary epoxy resin, it is preferable that the resin composition contain an epoxy resin having 2 or more epoxy groups in one molecule. From the viewpoint of significantly obtaining the desired effects of the present application, the proportion of the epoxy resin having 2 or more epoxy groups in one molecule is preferably 50% by mass or more, more preferably 60% by mass or more, and particularly preferably 70% by mass or more, relative to 100% by mass of the nonvolatile components of the other arbitrary epoxy resin.

[0065] The epoxy resin includes an epoxy resin that is in a liquid state at 20°C (hereinafter also referred to as "liquid epoxy resin") and an epoxy resin that is in a solid state at 20°C (hereinafter also referred to as "solid epoxy resin"). In one embodiment, the other arbitrary epoxy resin contains a liquid epoxy resin. In one embodiment, the other arbitrary epoxy resin contains a solid epoxy resin. The liquid epoxy resin and the solid epoxy resin can be used in combination.

[0066] As the liquid epoxy resin, it is preferable that the resin composition contain a liquid epoxy resin having 2 or more epoxy groups in one molecule.

[0067] As the liquid epoxy resin, it is preferable that the resin composition contain a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol AF type epoxy resin, a naphthalene type epoxy resin, a glycidyl ester type epoxy resin, a phenol novolac type epoxy resin, an alicyclic epoxy resin having an ester skeleton, a cyclohexane type epoxy resin, a cyclohexane dimethanol type epoxy resin, and an epoxy resin having a butadiene structure.

[0068] As specific examples of the liquid epoxy resin, "HP4032", "HP4032D", "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation; "EXA-850CRP" manufactured by DIC Corporation, "828US", "828EL", "jER828EL", "825", "EPIKOTE 828EL" (bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER807", "1750" (bisphenol F type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER152" (phenol novolak type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "ZX1059" (mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin) manufactured by Nippon Steel Chemical Co., Ltd.; "EX-721" (glycidyl ester type epoxy resin) manufactured by Nagase Chemtex Corporation; "CELLOXIDE 2021P (CEL2021P)" (alicyclic epoxy resin having an ester skeleton) manufactured by Daicel Corporation; "PB-3600" manufactured by Daicel Corporation, "JP-100", "JP-200" (epoxy resin having a butadiene structure) manufactured by Japan Carbon Co., Ltd.; "ZX1658", "ZX1658GS" (liquid 1,4-glycidyl cyclohexane type epoxy resin) manufactured by Nippon Steel Chemical Co., Ltd., etc. can be listed. These can be used alone or in combination of two or more.

[0069] As the solid epoxy resin, a solid epoxy resin having three or more epoxy groups in one molecule is preferable, and a solid epoxy resin of aromatic type having three or more epoxy groups in one molecule is more preferable.

[0070] As the solid epoxy resin, a solid epoxy resin of resorcinol type, naphthalene type, naphthalene type tetrafunctional epoxy resin, cresol novolak type epoxy resin, dicyclopentadiene type epoxy resin, triphenol type epoxy resin, naphthol type epoxy resin, biphenyl type epoxy resin, naphthalene ether type epoxy resin, anthracene type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin, tetraphenyl ethane type epoxy resin is preferable.

[0071] As specific examples of the solid epoxy resin, "HP4032H" (naphthalene type epoxy resin) manufactured by DIC Corporation; "HP-4700", "HP-4710" (naphthalene type tetrafunctional epoxy resin) manufactured by DIC Corporation; "N-690" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "HP-695" (cresol novolak type epoxy resin) manufactured by DIC Corporation; "HP-7200" (dicyclopentadiene type epoxy resin) manufactured by DIC Corporation; "HP-7200HH", "HP-7200H", "EXA-7311", "EXA-7311-G3", "EXA-7311-G4", "EXA-7311-G4S", "HP6000" (naphthalene ether type epoxy resin) manufactured by DIC Corporation; "EPPN-502H" (triphenol type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "NC7000L" (naphthol novolak type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "NC3000H", "NC3000", "NC3000L", "NC3100" (biphenyl type epoxy resin) manufactured by Nippon Kayaku Co., Ltd.; "ESN475V" (naphthol type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.; "ESN485" (naphthol novolak type epoxy resin) manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.; "YX4000H", "YX4000", "YL6121" (biphenyl type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX4000HK" (xylenol type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX8800" (anthracene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YX7700" (phenol novolak type epoxy resin containing xylene structure) manufactured by Mitsubishi Chemical Corporation; "PG-100", "CG-500" manufactured by Osaka Gas Chemicals Co., Ltd.; "YL7760" (bisphenol AF type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1010" (solid bisphenol A type epoxy resin) manufactured by Mitsubishi Chemical Corporation; "jER1031S" (tetraphenyl ethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation, and the like can be exemplified. These can be used alone or in combination of two or more.

[0072] As the other arbitrary epoxy resin, in the case where a liquid epoxy resin and a solid epoxy resin are used in combination, the mass ratio of the liquid epoxy resin to the solid epoxy resin (liquid epoxy resin / solid epoxy resin) is preferably 1 or more, more preferably 10 or more, and particularly preferably 50 or more. By setting the mass ratio of the liquid epoxy resin to the solid epoxy resin within the above range, the desired effects of the present application can be remarkably obtained.

[0073] The epoxy equivalent weight of the other arbitrary epoxy resin is preferably 50 g / eq. to 5,000 g / eq., more preferably 50 g / eq. to 3,000 g / eq., further more preferably 80 g / eq. to 2,000 g / eq., and still further more preferably 110 g / eq. to 1,000 g / eq. By making it within this range, the crosslinking density of the cured product of the resin sheet is sufficient, and an insulating layer having a small surface roughness can be obtained. The epoxy equivalent weight is the mass of the resin corresponding to 1 equivalent of the epoxy group. The epoxy equivalent weight can be measured according to JIS K 7236.

[0074] From the viewpoint of significantly obtaining the desired effects of the present application, the weight average molecular weight (Mw) of the other arbitrary epoxy resin is preferably 100 to 5,000, more preferably 100 to 3,000, and further more preferably 100 to 1,500. The weight average molecular weight of the resin can be measured by a gel permeation chromatography (GPC) method as a value converted to polystyrene.

[0075] The content of the other arbitrary epoxy resin is not particularly limited, and when the nonvolatile content of the resin composition excluding the (D) component is taken as 100% by mass, it is preferably 70% by mass or less, more preferably 60% by mass or less, further more preferably 50% by mass or less, and particularly preferably 40% by mass or less. The lower limit is not particularly limited, and can be, for example, 0% by mass or more, 10% by mass or more, 20% by mass or more, 30% by mass or more, or the like.

[0076] <(B) (Meth)acrylic polymer that is liquid at 25°C>

[0077] The resin composition of the present application contains a (B) (meth)acrylic polymer that is liquid at 25°C. Here, the determination of the liquid state can be made according to the "Method for confirming the liquid state" of Appendix 2 of the Ordinance on Tests and Attributes of Hazardous Substances (Ordinance of the Ministry of Health and Welfare No. 1 of 1989). The term "(meth)acrylic polymer" includes both the concepts of an acrylic polymer and a methacrylic polymer. The same applies to the terms "(meth)acrylate" and "(meth)acrylamide". The (B) component can function to relax stress in the cured product of the resin composition.

[0078] The (meth)acrylic polymer refers to a polymer obtained by polymerizing a monomer component containing a (meth)acrylate monomer. In the (meth)acrylic polymer, in addition to the (meth)acrylate monomer, a (meth)acrylamide monomer, a styrene monomer, a functional group-containing monomer, or the like can be included as a copolymerization component.

[0079] As the (meth)acrylate monomer, for example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, t-butyl (meth)acrylate, neo-pentyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isodecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, stearyl (meth)acrylate, cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, tricyclodecanyl (meth)acrylate, and the like aliphatic (meth)acrylate; phenyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, phenoxypropyl (meth)acrylate, and the like aromatic (meth)acrylate; 2-methoxyethyl (meth)acrylate, 2-ethoxyethyl (meth)acrylate, 2-methoxybutyl (meth)acrylate, 2-butoxyethyl (meth)acrylate, and the like alkoxy (meth)acrylate; chloroethyl (meth)acrylate, trifluoroethyl (meth)acrylate, and the like halogenated (meth)acrylate, and the like can be exemplified.

[0080] As the (meth)acrylamide monomer, for example, (meth)acrylamide, N-(n-butoxyalkyl) (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N,N-diethyl (meth)acrylamide, N,N-dimethylaminopropyl (meth)acrylamide, and the like can be exemplified. As the styrene monomer, for example, styrene, a-methylstyrene, and the like can be exemplified.

[0081] As the functional group-containing monomer, for example, a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, a glycidyl group-containing monomer, and the like can be exemplified.

[0082] As the hydroxyl group-containing monomer, for example, 2-hydroxyethyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 5-hydroxypentyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, (4-hydroxymethyl)cyclohexylmethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2,2-dimethyl-2-hydroxyethyl (meth)acrylate, N-hydroxymethyl (meth)acrylamide, N-hydroxyethyl (meth)acrylamide, and the like can be exemplified.

[0083] As the monomer containing a carboxyl group, for example, acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, fumaric acid, cinnamic acid, etc. can be exemplified. As the monomer containing an amino group, for example, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, etc. can be exemplified. As the monomer containing a glycidyl group, for example, glycidyl (meth) acrylate, allyl glycidyl ether, etc. can be exemplified.

[0084] In addition, the (meth) acrylic polymer can be a polymer containing an alkoxysilane group. As the alkoxysilane group, for example, trialkoxysilane groups such as trimethoxysilane group, triethoxysilane group, triisopropoxysilane group, triphenyloxysilane group, etc.; dialkoxysilane groups such as dimethoxymethylsilane group, diethoxymethylsilane group, etc.; monoalkoxysilane groups such as methoxydimethylsilane group, ethoxydimethylsilane group, etc. can be exemplified. These alkoxysilane groups can be contained singly or two or more kinds.

[0085] As specific examples of the (B) component, "ARUFON UP-1000", "ARUFON UP-1010", "ARUFON UP-1020", "ARUFON UP-1021", "ARUFON UP-1061", "ARUFON UP-1080", "ARUFON UP-1110", "ARUFON UP-1170", "ARUFON UP-1190", "ARUFON UP-1500", "ARUFON UH-2000", "ARUFON UH-2041", "ARUFON UH-2190", "ARUFON UHE-2012", "ARUFON UC-3510", "ARUFON UG-4010", "ARUFON US-6100", "ARUFON US-6170", etc. manufactured by Toagosei Co., Ltd. can be exemplified. These compounds can be used singly or two or more kinds in combination.

[0086] The glass transition temperature (Tg) of the (B) component is, for example, 20°C or lower, preferably 0°C or lower, more preferably -20°C or lower, further more preferably -40°C or lower, particularly preferably -50°C or lower.

[0087] The weight average molecular weight (Mw) of the (B) component is preferably 100 to 20,000, more preferably 200 to 10,000, further more preferably 500 to 5,000, particularly preferably 1,000 to 4,000.

[0088] The viscosity of the (B) component at 25°C is preferably 20,000 mPa-s or less, more preferably 10,000 mPa-s or less, and even more preferably 5,000 mPa-s or less. There is no particular limitation on the lower limit, and it can be, for example, 100 mPa-s or more, 200 mPa-s or more, or 300 mPa-s or more.

[0089] The content of the (B) component is not particularly limited, and when the nonvolatile components other than the (D) component in the resin composition are taken as 100% by mass, it is preferably 0.01% by mass or more, more preferably 0.1% by mass or more, even more preferably 0.5% by mass or more, and particularly preferably 2% by mass or more from the viewpoint of significantly obtaining the desired effects of the present application. The upper limit is preferably 40% by mass or less, more preferably 30% by mass or less, even more preferably 20% by mass or less, and particularly preferably 10% by mass or less from the viewpoint of significantly obtaining the desired effects of the present application.

[0090] (C) Curing Agent

[0091] The resin composition of the present application contains a (C) curing agent. The (C) curing agent has a function of curing the (A) component.

[0092] As the (C) curing agent, there is no particular limitation as long as it has a function of curing the epoxy resin, and examples include phenol-based curing agents, naphthol-based curing agents, acid anhydride-based curing agents, active ester-based curing agents, benzoxazine-based curing agents, cyanate-based curing agents, carbodiimide-based curing agents, phosphorus-based curing agents, amine-based curing agents, imidazole-based curing agents, guanidine-based curing agents, metal-based curing agents, and the like. The curing agent can be used alone or in combination with two or more kinds. From the viewpoint of significantly obtaining the desired effects of the present application, the (C) curing agent of the resin composition of the present application is preferably selected from the group consisting of phenol-based curing agents, naphthol-based curing agents, acid anhydride-based curing agents, amine-based curing agents, and imidazole-based curing agents. Furthermore, in one embodiment, the (C) curing agent preferably contains an active ester-based curing agent.

[0093] As the phenol-based curing agent and the naphthol-based curing agent, it is preferable to use a phenol-based curing agent having a novolak structure or a naphthol-based curing agent having a novolak structure from the viewpoint of heat resistance and water resistance. In addition, it is preferable to use a nitrogen-containing phenol-based curing agent or a nitrogen-containing naphthol-based curing agent, and more preferably a phenol-based curing agent having a triazine skeleton or a naphthol-based curing agent having a triazine skeleton from the viewpoint of adhesion to the adherend. Among them, a phenol-based curing agent having a triazine skeleton is preferable from the viewpoint of satisfying heat resistance, water resistance, and adhesion to a high degree. As specific examples of the phenol-based curing agent and the naphthol-based curing agent, "MEH-7700", "MEH-7810", "MEH-7851", "MEH-8000H" manufactured by Meiwa Plastic Industries, Ltd., "NHN", "CBN", "GPH" manufactured by Nippon Kayaku Co., Ltd., "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN-375", "SN-395" manufactured by Nippon Steel Chemical Co., Ltd., "LA-7052", "LA-7054", "LA-3018", "LA-3018-50P", "LA-1356", "TD2090", "TD-2090-60M" manufactured by DIC Corporation, and the like can be given.

[0094] As the anhydride-based curing agent, a curing agent having one or more anhydride groups in one molecule can be given. As specific examples of the anhydride-based curing agent, a phthalic anhydride, a tetrahydrophthalic anhydride, a hexahydrophthalic anhydride, a methyltetrahydrophthalic anhydride, a methylhexahydrophthalic anhydride, a methyl nadic anhydride, a hydrogenated methyl nadic anhydride, a trialkyl tetrahydrophthalic anhydride, a dodecenyl succinic anhydride, 5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, oxydiphthalic dianhydride, 3,3'-4,4'-diphenylsulfone tetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-C]furan-1,3-dione, ethylene glycol bis(trimellitic anhydride ester), a styrene-maleic acid resin obtained by copolymerization of styrene and maleic acid, and the like can be given. As commercially available products of the anhydride-based curing agent, "HNA-100", "MH-700", and the like manufactured by Shin Nippon Rika Co., Ltd. can be given.

[0095] As the active ester curing agent, there is no particular limitation, and generally, it is preferable to use a compound having two or more ester groups with high reactivity in one molecule, such as a phenol ester, a thio phenol ester, an N-hydroxy amine ester, an ester of a heterocyclic hydroxyl compound, and the like. The active ester curing agent is preferably a compound obtained by condensation reaction of a carboxylic acid compound and / or a thio carboxylic acid compound with a hydroxyl compound and / or a thiol compound. In particular, from the viewpoint of improving heat resistance, it is preferable to use an active ester curing agent obtained from a carboxylic acid compound and a hydroxyl compound, and more preferable to use an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound. As the carboxylic acid compound, there can be mentioned, for example, benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, and the like. As the phenol compound or the naphthol compound, there can be mentioned, for example, hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, pyrocatechol, a-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, pyrogallol, dicyclopentadiene type bisphenol compound, phenol novolac, and the like. Here, the "dicyclopentadiene type bisphenol compound" refers to a bisphenol compound obtained by condensing 2 molecules of phenol with 1 molecule of dicyclopentadiene.

[0096] Specifically, it is preferable to use an active ester compound having a dicyclopentadiene type bisphenol structure, an active ester compound having a naphthalene structure, an active ester compound having an acetyl of phenol novolac, an active ester compound having a benzoyl of phenol novolac, and among them, it is more preferable to use an active ester compound having a naphthalene structure, an active ester compound having a dicyclopentadiene type bisphenol structure. The "dicyclopentadiene type bisphenol structure" represents a divalent structural unit formed by phenylene-dicyclopentylene-phenylene.

[0097] As commercially available products of active ester-based curing agents, active ester compounds containing a dicyclopentadiene type diphenol structure can be exemplified by "EXB9451", "EXB9460", "EXB9460S", "HPC-8000", "HPC-8000H", "HPC-8000-65T", "HPC-8000H-65TM", "EXB-8000L", "EXB-8000L-65TM" (manufactured by DIC Corporation), and the like; active ester compounds containing a naphthalene structure can be exemplified by "EXB9416-70BK", "EXB-8150-65T" (manufactured by DIC Corporation), and the like; active ester compounds of acetylated phenol novolak can be exemplified by "DC808" (manufactured by Mitsubishi Chemical Corporation), and the like; active ester compounds of benzoylated phenol novolak can be exemplified by "YLH1026" (manufactured by Mitsubishi Chemical Corporation), and the like; as active ester-based curing agents of acetylated phenol novolak, "DC808" (manufactured by Mitsubishi Chemical Corporation), and the like can be exemplified; as active ester-based curing agents of benzoylated phenol novolak, "YLH1026" (manufactured by Mitsubishi Chemical Corporation), "YLH1030" (manufactured by Mitsubishi Chemical Corporation), "YLH1048" (manufactured by Mitsubishi Chemical Corporation), and the like can be exemplified.

[0098] As specific examples of benzoxazine-based curing agents, "JBZ-OP100D", "ODA-BOZ" manufactured by JFE Chemical Corporation, "HFB2006M" manufactured by Showa Highpolymer Co., Ltd., "P-d", "F-a" manufactured by Shikoku Chemicals Corporation, and the like can be exemplified.

[0099] As cyanate-based curing agents, examples include difunctional cyanate resins such as bisphenol A dicyanate, polyphenol cyanate (oligomeric (3-methylene-1, 5-phenylene cyanate)), 4, 4'-methylenebis (2, 6-dimethylphenyl cyanate), 4, 4'-ethylenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2, 2-bis (4-cyanato) phenylpropane, 1, 1-bis (4-cyanatophenylmethane), bis (4-cyanato-3, 5-dimethylphenyl) methane, 1, 3-bis (4-cyanatophenyl-1- (methyl ethylene) ) benzene, bis (4-cyanatophenyl) sulfide, and bis (4-cyanatophenyl) ether; polyfunctional cyanate resins derived from phenol novolak and cresol novolak; and prepolymers obtained by partially triazine-izing these cyanate resins. As specific examples of cyanate-based curing agents, "PT30" and "PT60" (both are phenol novolak type polyfunctional cyanate resins), "BA230", "BA230S75" (prepolymers in which a part or all of bisphenol A dicyanate is triazine-ized to form a trimer) manufactured by Lonza Japan Corporation, and the like can be exemplified.

[0100] As specific examples of the carbodiimide-based curing agent, "V-03", "V-07", etc. manufactured by Nippon Shokubai Co., Ltd. can be given.

[0101] As the phosphorus-based curing agent, triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc. can be given.

[0102] As the amine-based curing agent, triethylamine, tributylamine, 4-dimethylaminopyridine (DMAP), benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8-diazabicyclo[5.4.0]undecene, etc. can be given, and aliphatic amine-based curing agents such as 4-dimethylaminopyridine, 1,8-diazabicyclo[5.4.0]undecene, etc.; aromatic amine-based curing agents such as benzidine, o-dimethylbenzidine, 4,4'-diaminodiphenylmethane, 4,4'-diamino-3,3'-dimethyldiphenylmethane ("KAYABOND C-100" manufactured by Nippon Kayaku Co., Ltd. as a commercial product), 4,4'-diamino-3,3'-diethyldiphenylmethane ("KAYAHARD A-A" manufactured by Nippon Kayaku Co., Ltd. as a commercial product), 4,4'-diamino-3,3',5,5'-tetramethyldiphenylmethane ("KAYABOND C-200S" manufactured by Nippon Kayaku Co., Ltd. as a commercial product), 4,4'-diamino-3,3',5,5'-tetraethyldiphenylmethane ("KAYABOND C-300S" manufactured by Nippon Kayaku Co., Ltd. as a commercial product), 4,4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane, 4,4'-diaminodiphenyl ether, 1,3-bis(3-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,4-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)neopentane, 4,4'-[1,3-phenylenebis(1-methylethylidene)]dianiline ("Dianiline M" manufactured by Mitsui Chemicals, Inc. as a commercial product), 4,4'-[1,4-phenylenebis(1-methylethylidene)]dianiline ("Dianiline P" manufactured by Mitsui Chemicals, Inc. as a commercial product), 2,2-bis[4-(4-aminophenoxy)phenyl]propane ("BAPP" manufactured by Wakayama Seika Kogyo Co., Ltd. as a commercial product), 2,2-bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 4,4'-bis(4-aminophenoxy)diphenyl, etc. can be given.

[0103] As the imidazole-based curing agent, for example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, and the like imidazole compounds, and adducts of the imidazole compounds with epoxy resins can be exemplified.

[0104] As the imidazole-based curing agent, commercially available products can be used, and for example, "P200-H50" manufactured by Mitsubishi Chemical Corporation, and the like can be exemplified.

[0105] As the guanidine-based curing agent, for example, dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]decene-5, 7-methyl-1,5,7-triazabicyclo[4.4.0]decene-5, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-dimethylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, 1-(o-tolyl)biguanide, and the like can be exemplified.

[0106] As the metal-based curing agent, there can be mentioned, for example, an organic metal complex or an organic metal salt of a metal such as cobalt, copper, zinc, iron, nickel, manganese, tin, and the like. As specific examples of the organic metal complex, there can be mentioned organic cobalt complexes such as cobalt (II) acetylacetonate, cobalt (III) acetylacetonate, and the like, organic copper complexes such as copper (II) acetylacetonate, and the like, organic zinc complexes such as zinc (II) acetylacetonate, and the like, organic iron complexes such as iron (III) acetylacetonate, and the like, organic nickel complexes such as nickel (II) acetylacetonate, and the like, organic manganese complexes such as manganese (II) acetylacetonate, and the like. As the organic metal salt, there can be mentioned, for example, zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like.

[0107] In the case where the curing agent is contained, the amount ratio of the epoxy resin to the curing agent is preferably in the range of 1 : 0.2 to 1 : 2, more preferably in the range of 1 : 0.3 to 1 : 1.5, and further more preferably in the range of 1 : 0.4 to 1 : 1.2, in terms of the ratio of [the total number of epoxy groups of the epoxy resin] : [the total number of reactive groups of the curing agent]. Here, the reactive group of the curing agent means an active hydroxyl group, an active ester group, or the like, and differs depending on the kind of the curing agent. Further, the total number of epoxy groups of the epoxy resin means a value obtained by adding up the values obtained by dividing the nonvolatile component mass of each epoxy resin by the epoxy equivalent for all the epoxy resins, and the total number of reactive groups of the curing agent means a value obtained by adding up the values obtained by dividing the nonvolatile component mass of each curing agent by the reactive group equivalent for all the curing agents. By making the amount ratio of the epoxy resin to the curing agent in such a range, the heat resistance of the obtained cured product is further improved.

[0108] The content of the (C) component is not particularly limited, and when the nonvolatile component in the resin composition other than the (D) component is taken as 100% by mass, it is preferably 0.1% by mass or more, more preferably 1% by mass or more, further more preferably 3% by mass or more, and particularly preferably 5% by mass or more, from the viewpoint of significantly obtaining the desired effects of the present application. From the viewpoint of significantly obtaining the desired effects of the present application, the upper limit thereof is preferably 70% by mass or less, more preferably 65% by mass or less, further more preferably 60% by mass or less, and particularly preferably 55% by mass or less.

[0109] (D) Inorganic Filler

[0110] The resin composition of the present application contains the (D) inorganic filler.

[0111] (D) The inorganic filler is not particularly limited in material, and examples include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate phosphate, and particularly preferred are silica and alumina. As the silica, examples include amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica, and the like. Further, as the silica, spherical silica is preferred. The inorganic filler can be used alone or in combination of two or more kinds.

[0112] As the commercially available inorganic filler (D), examples include "UFP-30" manufactured by Kanto Chemical Co., Inc., "SP60-05", "SP507-05" manufactured by Nippon Steel & Sumikin Materials Co., Ltd., "YC100C", "YA050C", "YA050C-MJE", "YA010C" manufactured by Yamao Co., Ltd., "UFP-30" manufactured by DENKA Co., Ltd., "SILFIL NSS-3N", "SILFIL NSS-4N", "SILFIL NSS-5N" manufactured by Tokuyama Co., Ltd., "SC2500SQ", "SO-C4", "SO-C2", "SO-C1" manufactured by Yamao Co., Ltd., and the like.

[0113] (D) The average particle diameter of the inorganic filler is not particularly limited, and from the viewpoint of suppressing the occurrence of flow marks, it is preferably 40 μm or less, more preferably 30 μm or less, further more preferably 20 μm or less, still further more preferably 15 μm or less, and particularly preferably 10 μm or less. The lower limit of the average particle diameter of the inorganic filler is not particularly limited, and it is preferably 0.1 μm or more, more preferably 1 μm or more, further more preferably 3 μm or more, and still further more preferably 5 μm or more. The average particle diameter of the inorganic filler can be measured by a laser diffraction scattering method based on Mie scattering theory. Specifically, the particle diameter distribution of the inorganic filler is measured on a volume basis by a laser diffraction scattering type particle diameter distribution measuring device, and the median particle diameter is measured as the average particle diameter. The sample to be measured can be obtained by weighing 100 mg of the inorganic filler and 10 g of methyl ethyl ketone into a tube, and dispersing the mixture by ultrasonic waves for 10 minutes. For the sample to be measured, the volume-based particle diameter distribution of the inorganic filler is measured in a flow cell manner using a laser diffraction type particle diameter distribution measuring device, using blue and red for the wavelength of the light source, and the average particle diameter is calculated from the obtained particle diameter distribution as the median particle diameter. As the laser diffraction type particle diameter distribution measuring device, for example, "LA-960" manufactured by HORIBA, Ltd. can be mentioned.

[0114] From the viewpoint of improving the moisture resistance and the dispersibility, the inorganic filler (D) is preferably treated with one or more surface treatment agents selected from the group consisting of an aminosilane-based coupling agent, an epoxy silane-based coupling agent, a mercapto silane-based coupling agent, an alkoxy silane compound, a silazane compound, a titanate-based coupling agent, and the like. As commercially available products of the surface treatment agent, for example, "KBM 403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM 803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBE 903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM 573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM 103" (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-4803" (long-chain epoxy silane coupling agent) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM-7103" (3,3,3-trifluoropropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM 503" (3-methacryloyloxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Co., Ltd., "KBM 5783", and the like can be mentioned.

[0115] The degree of surface treatment by the surface treatment agent is preferably within a prescribed range from the viewpoint of improving the dispersibility of the inorganic filler material. Specifically, the surface treatment is preferably performed by 0.2 to 5 mass% of the surface treatment agent, more preferably by 0.2 to 3 mass% of the surface treatment agent, and further more preferably by 0.3 to 2 mass% of the surface treatment agent, with respect to 100 mass% of the inorganic filler material.

[0116] The degree of surface treatment by the surface treatment agent can be evaluated by the carbon amount per unit surface area of the inorganic filler material. The carbon amount per unit surface area of the inorganic filler material is preferably 0.02 mg / m 2 or less, more preferably 0.1 mg / m 2 or less, and further more preferably 0.2 mg / m 2 or less, from the viewpoint of improving the dispersibility of the inorganic filler material. On the other hand, the carbon amount per unit surface area of the inorganic filler material is preferably 1 mg / m 2 or more, more preferably 0.8 mg / m 2 or more, and further more preferably 0.5 mg / m 2 or more, from the viewpoint of preventing the increase in the melt viscosity of the resin varnish and the melt viscosity under the sheet form.

[0117] (D) The carbon amount per unit surface area of the inorganic filler material can be measured after the inorganic filler material after the surface treatment is subjected to a cleaning treatment by a solvent such as methyl ethyl ketone (MEK). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler material subjected to the surface treatment by the surface treatment agent, and the mixture is subjected to ultrasonic cleaning at 25°C for 5 minutes. After the supernatant is removed and the solid component is dried, the carbon amount per unit surface area of the inorganic filler material can be measured using a carbon analyzer. As the carbon analyzer, "EMIA-320V" manufactured by HORIBA, Ltd. or the like can be used.

[0118] From the viewpoint of further improving the effects of the present application, the specific surface area of the inorganic filler material (D) is preferably 0.01 m 2 / g or more, more preferably 0.1 m 2 / g or more, and particularly preferably 0.2 m 2 / g or more. There is no particular limitation on the upper limit, and it is preferably 50 m 2 / g or less, more preferably 20 m 2 / g or less, 10 m 2 / g or less, or 5 m 2 / g or less. The specific surface area of the inorganic filler material can be obtained by adsorbing nitrogen gas to the surface of a sample according to the BET method using a specific surface area measuring device (Macsorb HM-1210 manufactured by Mountech Corporation), and calculating the specific surface area by the BET multipoint method.

[0119] (D) The content of the inorganic filler is not particularly limited, and when the total nonvolatile components in the resin composition are taken as 100% by mass, it is preferably 20% by mass or more, more preferably 50% by mass or more, further more preferably 70% by mass or more, and particularly preferably 80% by mass or more, from the viewpoint of use for a specific purpose. The upper limit is not particularly limited, and can be, for example, 98% by mass or less, 95% by mass or less, 92% by mass or less, 90% by mass or less, or the like.

[0120] (E) Organic solvent

[0121] The resin composition of the present application can further contain (E) an organic solvent as an arbitrary volatile component.

[0122] As the organic solvent, there can be mentioned, for example, ketone solvents such as acetone, methyl ethyl ketone, and cyclohexanone; ester solvents such as ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate, carbitol acetate, diethylene glycol monoethyl ether acetate, and γ-butyrolactone; carbitol solvents such as cellosolve and butyl carbitol; aromatic hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, and mesitylene; amide solvents such as dimethylformamide, dimethylacetamide (DMAc), and N-methylpyrrolidone; alcohol solvents such as methanol, ethanol, and 2-methoxypropanol; and hydrocarbon solvents such as cyclohexane and methylcyclohexane. The organic solvent can be used alone or in combination of two or more at an arbitrary ratio.

[0123] In one embodiment, the resin composition of the present application is preferably free of an organic solvent.

[0124] (F) Other additive

[0125] The resin composition can further contain, as an arbitrary component, other additives in addition to the above-mentioned components. As such an additive, there can be mentioned, for example, organic fillers, thickeners, antifoaming agents, leveling agents, adhesion-imparting agents, polymerization initiators, and flame retardants. These additives can be used alone or in combination of two or more. The amount of each additive to be used can be appropriately set by those skilled in the art.

[0126] Method for producing resin composition

[0127] In one embodiment, the resin composition of the present application can be produced, for example, by a method comprising the steps of: adding (A) an epoxy resin, (B) a (meth)acrylic polymer that is liquid at 25°C, (C) a curing agent, (D) an inorganic filler, (E) an organic solvent as needed, and (F) other additives as needed, to a reaction vessel in an arbitrary order and / or partially or entirely simultaneously, and mixing to obtain a resin composition.

[0128] In the above process, the temperature during the addition of each component can be appropriately set, and heating and / or cooling can be performed temporarily or continuously during the addition of each component. Stirring or shaking can be performed during the addition of each component. Further, it is preferable that a process of uniformly dispersing the resin composition by stirring it with a stirring device such as a mixer, or the like, be further included after the above process.

[0129] <Properties of the resin composition>

[0130] The resin composition of the present application contains (A) an epoxy resin, (B) a (meth) acrylic polymer which is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler, and the (A) component contains (A-1) a glycidyl amine type epoxy resin, and thus warping of the cured product can be suppressed, and further, excellent adhesion to a load in the vertical direction of the cured product film after environmental testing can be obtained. Further, in one embodiment, the resin composition of the present application can suppress the occurrence of flow marks.

[0131] In one embodiment, the warping amount at 25°C of a substrate formed from a cured product layer (thickness: 300 μm, heat cured at 180°C for 90 minutes) of the resin composition of the present application and a 12-inch silicon wafer, measured according to JEITA EDX-7311-24 of the Electronic Information Technology Industry Association standard, is preferably less than 5 mm, more preferably less than 4 mm, further more preferably less than 3 mm, and particularly preferably less than 2 mm.

[0132] In one embodiment, the adhesion strength of a cured product layer (thickness: 50 μm, heat cured at 180°C for 90 minutes) of the resin composition of the present application after high temperature and high humidity environmental testing (130°C, 85% RH, 96 hours) and a silicon wafer, in the case of a vertical tensile test at 0.1 kg / sec, is preferably 300 kgf / cm 2 More preferably, 400 kgf / cm 2 Further more preferably, 450 kgf / cm 2 Particularly preferably, 500 kgf / cm 2 or more.

[0133] <Use of the resin composition>

[0134] The cured product of the resin composition of the present application can be used as a sealing layer and an insulating layer for a semiconductor based on the above advantages. Thus, the resin composition can be used as a resin composition for a semiconductor sealing or an insulating layer.

[0135] For example, the resin composition of the present application can be suitably used as: a resin composition for forming an insulating layer of a semiconductor chip package (resin composition for insulating layer of semiconductor chip package), and a resin composition for forming an insulating layer of a circuit board (including a printed wiring board) (resin composition for insulating layer of circuit board).

[0136] Further, for example, the resin composition of the present application can be suitably used as: a resin composition for sealing a semiconductor chip of a semiconductor chip package (resin composition for sealing of semiconductor chip).

[0137] As a semiconductor chip package to which a sealing layer or an insulating layer formed from the cured product of the resin composition of the present application can be applied, for example, FC-CSP, MIS-BGA package, ETS-BGA package, Fan-out type WLP (Wafer Level Package), Fan-in type WLP, Fan-out type PLP (Panel Level Package), and Fan-in type PLP can be cited.

[0138] Further, the resin composition of the present application can also be used as an underfill, for example, as a material for MUF (Molding Under Filling) used after connecting a semiconductor chip to a substrate.

[0139] In addition, the resin composition of the present application can also be used for a sheet-shaped laminated material such as a resin sheet, a prepreg, a liquid material such as a resin ink for a solder resist, a chip soldering material, a hole-filling resin, a component-embedding resin, and the like.

[0140] <Resin Sheet>

[0141] The resin sheet of the present application has a support and a resin composition layer provided on the support. The resin composition layer is a layer containing the resin composition of the present application, and is usually formed from the resin composition.

[0142] From the viewpoint of thinness, the thickness of the resin composition layer is preferably 600 μm or less, more preferably 500 μm or less. The lower limit of the thickness of the resin composition layer is preferably 1 μm or more, more preferably 5 μm or more, still more preferably 10 μm or more, further more preferably 50 μm or more, and particularly preferably 100 μm or more.

[0143] Further, the thickness of the cured product obtained by curing the resin composition layer is preferably 1 μm or more, more preferably 5 μm or more, still more preferably 10 μm or more, further more preferably 50 μm or more, and particularly preferably 100 μm or more.

[0144] As the support, a film formed of a plastic material, a metal foil, a release paper, preferably a film formed of a plastic material, a metal foil can be exemplified.

[0145] In the case of using a film formed of a plastic material as the support, as the plastic material, a polyester such as polyethylene terephthalate (hereinafter also referred to as "PET"), polyethylene naphthalate (hereinafter also referred to as "PEN"), a polycarbonate (hereinafter also referred to as "PC"), an acrylic polymer such as polymethyl methacrylate (hereinafter also referred to as "PMMA"), a cyclic polyolefin, triacetyl cellulose (hereinafter also referred to as "TAC"), a polyether sulfide (hereinafter also referred to as "PES"), a polyether ketone, a polyimide, etc. can be exemplified. Among them, polyethylene terephthalate, polyethylene naphthalate are preferable, and low-priced polyethylene terephthalate is particularly preferable.

[0146] In the case of using a metal foil as the support, as the metal foil, a copper foil, an aluminum foil, etc. can be exemplified. Among them, a copper foil is preferable. As the copper foil, a foil formed of a single metal of copper, or a foil formed of an alloy of copper and another metal (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) can be used.

[0147] The support can be subjected to a treatment such as a matte treatment, a corona treatment, an antistatic treatment on the surface to be joined to the resin composition layer.

[0148] Further, as the support, a support with a release layer having a release layer on the surface to be joined to the resin composition layer can be used. As the release agent of the release layer of the support with a release layer, a release agent selected from one or more of an alkyd resin, a polyolefin resin, a polyurethane resin, and a silicone resin can be exemplified. As a commercial product of the release agent, "SK-1", "AL-5", "AL-7", etc. manufactured by Lindal Corporation as an alkyd resin-based release agent can be exemplified. Further, as the support with a release layer, "LUMIRROR T60" manufactured by Toray Industries, Inc., "Purex" manufactured by Teijin Limited, "Unipeel" manufactured by UNITIKA Corporation, etc. can be exemplified.

[0149] The thickness of the support is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. Note that in the case of using a support with a release layer, the thickness of the support with a release layer as a whole is preferably in the above range.

[0150] The resin sheet can be manufactured, for example, by applying the resin composition on a support using a coating device such as a kiss coater. Alternatively, the resin composition can be dissolved in an organic solvent to prepare a resin varnish, and the resin sheet can be manufactured by applying the resin varnish. By using a solvent, the viscosity can be adjusted, and the coatability can be improved. In the case of using the resin varnish, the resin varnish is usually dried after the application to form the resin composition layer.

[0151] The drying can be performed by a publicly known method such as heating or hot air blowing. As for the drying conditions, the drying is usually performed under conditions where the content of the organic solvent in the resin composition layer becomes 10% by mass or less, preferably 5% by mass or less. Depending on the boiling point of the organic solvent in the resin varnish, for example, in the case of using a resin varnish containing 30% by mass to 60% by mass of an organic solvent, the resin composition layer can be formed by drying at 50°C to 150°C for 3 minutes to 10 minutes.

[0152] The resin sheet can include any layer other than the support and the resin composition layer, as necessary. For example, in the resin sheet, a protective film can be provided on the surface of the resin composition layer which is not bonded to the support (i.e., the surface on the side opposite to the support). The thickness of the protective film is, for example, 1 μm to 40 μm. With the protective film, the surface of the resin composition layer can be prevented from adhering to dirt or the like or from being damaged. In the case where the resin sheet has the protective film, the resin sheet can be used by peeling off the protective film. Alternatively, the resin sheet can be stored in a roll shape.

[0153] The resin sheet can be suitably used for forming an insulating layer in the manufacture of a semiconductor chip package (insulating resin sheet for semiconductor chip package). For example, the resin sheet can be used for forming an insulating layer of a circuit substrate (insulating layer resin sheet for circuit substrate). As examples of the package using such a substrate, FC-CSP, MIS-BGA package, ETS-BGA package can be listed.

[0154] In addition, the resin sheet can be suitably used for sealing a semiconductor chip (resin sheet for semiconductor chip sealing). As the semiconductor chip package which can be suitably used, for example, fan-out WLP, fan-in WLP, fan-out PLP, fan-in PLP, and the like can be listed.

[0155] In addition, the resin sheet can also be used as a material for MUF which is used after the semiconductor chip is connected to a substrate.

[0156] In addition, the resin sheet can be used for other wide applications where high insulating reliability is required. For example, the resin sheet can be suitably used for forming an insulating layer of a circuit substrate such as a printed wiring board.

[0157] < Circuit Substrate >

[0158] The circuit substrate of the present application contains an insulating layer formed of a cured product of the resin composition of the present application. The circuit substrate can be manufactured, for example, by a manufacturing method including the following process (1) and process (2):

[0159] (1) a process of forming a resin composition layer on a substrate;

[0160] (2) a process of thermally curing the resin composition layer to form an insulating layer.

[0161] A substrate is prepared in process (1). As the substrate, a substrate such as a glass epoxy substrate, a metal substrate (stainless steel and cold-rolled steel sheet (SPCC), etc.), a polyester substrate, a polyimide substrate, a BT resin substrate, a thermosetting polyphenylene ether substrate, etc. can be exemplified. Further, the substrate can have a metal layer such as a copper foil on the surface as a part of the substrate. For example, a substrate having a peelable first metal layer and a second metal layer on both side surfaces can be used. In the case of using such a substrate, generally, a conductor layer as a wiring layer that can function as a circuit wiring is formed on the surface of the second metal layer on the side opposite to the first metal layer. As such a substrate having a metal layer, a very thin copper foil with a carrier copper foil "Micro Thin" manufactured by Mitsui Mining Co., Ltd. can be exemplified.

[0162] Further, a conductor layer can be formed on one or both side surfaces of the substrate. In the following description, a member containing the substrate and the conductor layer formed on the surface of the substrate is also appropriately referred to as a "substrate with a wiring layer". As the conductor material contained in the conductor layer, a material containing one or more metals selected from gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium can be exemplified. As the conductor material, a single metal can be used, or an alloy can be used. As the alloy, an alloy of two or more metals selected from the above metals (for example, nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy) can be exemplified. Among them, from the viewpoint of the generality of the conductor layer formation, cost, and easiness of pattern formation, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as a single metal, and nickel-chromium alloy, copper-nickel alloy, copper-titanium alloy, and the like as an alloy are preferable. Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as a single metal, and nickel-chromium alloy are more preferable, and copper as a single metal is particularly preferable.

[0163] For the conductor layer, for example, in order to function as a wiring layer, patterning is performed. At this time, the line width (circuit width) / line pitch (width between circuits) ratio of the conductor layer is not particularly limited, and is preferably 20 / 20 μm or less (i.e., the pitch is 40 μm or less), more preferably 10 / 10 μm or less, further more preferably 5 / 5 μm or less, still further more preferably 1 / 1 μm or less, and particularly preferably 0.5 / 0.5 μm or more. The pitch need not be the same throughout the conductor layer. The minimum pitch of the conductor layer can be, for example, 40 μm or less, 36 μm or less, or 30 μm or less.

[0164] The thickness of the conductor layer varies depending on the design of the circuit substrate, and is preferably 3 μm to 35 μm, more preferably 5 μm to 30 μm, further more preferably 10 μm to 20 μm, and particularly preferably 15 μm to 20 μm.

[0165] The conductor layer can be formed, for example, by a method including the steps of: a step of laminating a dry film (photosensitive resist film) on a base material; a step of forming a patterned dry film by exposing and developing the dry film with a photomask under prescribed conditions; a step of forming a conductor layer by plating, such as electrolytic plating, using the developed patterned dry film as a plating mask; and a step of peeling the patterned dry film. As the dry film, a photosensitive dry film formed from a photoresist composition can be used, and for example, a dry film formed from a novolak resin, an acrylic resin, or the like can be used. The lamination conditions of the base material and the dry film can be the same as the lamination conditions of the base material and the resin sheet described later. The peeling of the dry film can be performed, for example, using an alkaline peeling solution such as a sodium hydroxide solution.

[0166] After the base material is prepared, a resin composition layer is formed on the base material. When the surface of the base material is provided with a conductor layer, the formation of the resin composition layer is preferably performed in such a manner that the conductor layer is embedded in the resin composition layer.

[0167] The formation of the resin composition layer is performed, for example, by laminating a resin sheet on a base material. This lamination can be performed, for example, by thermally pressure-bonding the resin sheet to the base material from the self-supporting body side to adhere the resin composition layer to the base material. As a member for thermally pressure-bonding the resin sheet to the base material (hereinafter also referred to as "thermal pressure-bonding member"), a heated metal plate (SUS end plate or the like), a metal roller (SUS roller or the like), or the like can be used. Note that it is preferable not to directly press the thermal pressure-bonding member against the resin sheet, but to press the thermal pressure-bonding member against the resin sheet via an elastic material such as heat-resistant rubber so that the resin sheet sufficiently conforms to the surface irregularities of the base material.

[0168] The lamination of the base material and the resin sheet can be performed, for example, by a vacuum lamination method. In the vacuum lamination method, the heating and press bonding temperature is preferably in the range of 60°C to 160°C, more preferably in the range of 80°C to 140°C. The heating and press bonding pressure is preferably in the range of 0.098 MPa to 1.77 MPa, more preferably in the range of 0.29 MPa to 1.47 MPa. The heating and press bonding time is preferably in the range of 20 seconds to 400 seconds, more preferably in the range of 30 seconds to 300 seconds. The lamination is preferably performed under a reduced pressure condition of 13 hPa or less.

[0169] The smoothing treatment of the laminated resin sheet can be performed, for example, by pressing the heating and press bonding member from the support side under normal pressure (atmospheric pressure) after the lamination. The pressing conditions for the smoothing treatment can be the same as the heating and press bonding conditions for the lamination described above. Note that the lamination and the smoothing treatment can be continuously performed using a vacuum laminator.

[0170] Further, the formation of the resin composition layer can be performed, for example, by a compression molding method. The molding conditions can be the same as those in the process of forming the resin composition layer described later in the process of forming the sealing layer of the semiconductor chip package.

[0171] After the formation of the resin composition layer on the base material, the resin composition layer is heat cured to form the insulating layer. The heat curing conditions of the resin composition layer vary depending on the kind of the resin composition, and the curing temperature is usually in the range of 120°C to 240°C, preferably in the range of 150°C to 220°C, more preferably in the range of 170°C to 200°C, and the curing time is usually in the range of 5 minutes to 120 minutes, preferably in the range of 10 minutes to 100 minutes, more preferably in the range of 15 minutes to 90 minutes.

[0172] Before the heat curing of the resin composition layer, a pre-heating treatment of heating at a temperature lower than the curing temperature can be performed on the resin composition layer. For example, the resin composition layer can be pre-heated at a temperature of usually 50°C or higher and lower than 120°C, preferably 60°C or higher and 110°C or lower, more preferably 70°C or higher and 100°C or lower, for usually 5 minutes or more, preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes, before the heat curing of the resin composition layer.

[0173] By performing the operations as described above, a circuit substrate having an insulating layer can be manufactured. Further, the manufacturing method of the circuit substrate can further include an arbitrary process. For example, in the case where the circuit substrate is manufactured using a resin sheet, the manufacturing method of the circuit substrate can include a process of peeling the support of the resin sheet. The support can be peeled before the heat curing of the resin composition layer, or can be peeled after the heat curing of the resin composition layer.

[0174] The manufacturing method of the circuit substrate can include, for example, a step of polishing the surface of the insulating layer after the insulating layer is formed. The polishing method is not particularly limited. For example, the surface of the insulating layer can be polished using a surface grinder.

[0175] The manufacturing method of the circuit substrate can include, for example, a step (3) of interlayer connecting the conductor layer, a so-called step of opening a hole in the insulating layer. Thereby, a hole such as a via hole or a through hole can be formed in the insulating layer. As a method of forming a through hole, for example, laser irradiation, etching, mechanical drilling, or the like can be listed. The size and shape of the through hole can be appropriately determined in accordance with the design of the circuit substrate. Note that the step (3) can be interlayer connecting by polishing or grinding of the insulating layer.

[0176] After the through hole is formed, it is preferable to perform a step of removing a residue in the through hole. This step is also referred to as a residue removal treatment. For example, in the case where the formation of the conductor layer on the insulating layer is performed by a plating step, a wet residue removal treatment can be performed on the through hole. Further, in the case where the formation of the conductor layer on the insulating layer is performed by a sputtering step, a dry residue removal treatment such as a plasma treatment step can be performed. Furthermore, the insulating layer can be subjected to a roughening treatment by the residue removal step.

[0177] Further, the insulating layer can be subjected to a roughening treatment before the conductor layer is formed on the insulating layer. By this roughening treatment, generally, the surface of the insulating layer including the inside of the through hole is roughened. As the roughening treatment, either a dry method or a wet method can be performed. As an example of the dry method roughening treatment, plasma treatment or the like can be listed. Further, as an example of the wet method roughening treatment, a method of sequentially performing a swelling treatment using a swelling liquid, a roughening treatment using an oxidizing agent, and a neutralization treatment using a neutralizing liquid can be listed.

[0178] After the through hole is formed, the conductor layer can be formed on the insulating layer. By forming the conductor layer at the position where the through hole is formed, the newly formed conductor layer is in conduction with the conductor layer on the surface of the substrate, and interlayer connection is performed. As a method of forming the conductor layer, for example, a plating method, a sputtering method, an evaporation method, or the like can be listed, and a plating method is preferable. In a preferable embodiment, plating is performed on the surface of the insulating layer by an appropriate method such as a semi-additive method or a full-additive method, and a conductor layer having a desired wiring pattern is formed. Further, in the case where the support in the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by a subtractive method. The material of the formed conductor layer can be a single metal or an alloy. Further, the conductor layer can have a single layer structure or a multilayer structure including two or more layers of different kinds of materials.

[0179] Here, an example of the embodiment of forming the conductor layer on the insulating layer will be described in detail. The plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, a mask pattern exposing a part of the plating seed layer is formed on the formed plating seed layer in correspondence with the desired wiring pattern. After the electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating, the mask pattern is removed. Then, the unnecessary plating seed layer is removed by processing such as etching, so that the conductor layer having the desired wiring pattern can be formed. It should be noted that the dry film used for forming the mask pattern at the time of forming the conductor layer is the same as the above-described dry film.

[0180] The manufacturing method of the circuit substrate can include a step (4) of removing the base material. By removing the base material, the circuit substrate having the insulating layer and the conductor layer embedded in the insulating layer is obtained. The step (4) can be performed, for example, in the case where the base material having the peelable metal layer is used.

[0181] < Semiconductor Chip Package >

[0182] The semiconductor chip package according to the first embodiment of the present application includes the above-described circuit substrate and the semiconductor chip mounted on the circuit substrate. The semiconductor chip package can be manufactured by bonding the semiconductor chip to the circuit substrate.

[0183] The bonding conditions of the circuit substrate and the semiconductor chip can employ any conditions capable of conducting the terminal electrode of the semiconductor chip and the circuit wiring of the circuit substrate. For example, the conditions used in flip chip mounting of the semiconductor chip can be employed. Further, for example, the semiconductor chip and the circuit substrate can be bonded with an insulating adhesive interposed therebetween.

[0184] As an example of the bonding method, a method of press-bonding the semiconductor chip to the circuit substrate can be exemplified. As the press-bonding conditions, the press-bonding temperature is usually in the range of 120°C to 240°C, preferably in the range of 130°C to 200°C, more preferably in the range of 140°C to 180°C, and the press-bonding time is usually in the range of 1 second to 60 seconds, preferably in the range of 5 seconds to 30 seconds.

[0185] Further, as another example of the bonding method, a method of bonding the semiconductor chip to the circuit substrate by reflow soldering can be exemplified. The reflow soldering conditions can be set to the range of 120°C to 300°C.

[0186] After the semiconductor chip is bonded to the circuit substrate, the semiconductor chip can be filled with a mold underfill material. As the mold underfill material, the above-described resin composition can be used, or the above-described resin sheet can be used.

[0187] The semiconductor chip package according to the second embodiment of the present application includes a semiconductor chip and a cured product of the above-described resin composition that seals the semiconductor chip. In such a semiconductor chip package, generally, the cured product of the resin composition functions as a sealing layer. The semiconductor chip package according to the second embodiment can be exemplified by, for example, a fan-out WLP.

[0188] The manufacturing method of such a semiconductor chip package includes:

[0189] (A) a step of stacking a temporary fixing film on a substrate;

[0190] (B) a step of temporarily fixing a semiconductor chip on the temporary fixing film;

[0191] (C) a step of forming a sealing layer on the semiconductor chip;

[0192] (D) a step of peeling the substrate and the temporary fixing film from the semiconductor chip;

[0193] (E) a step of forming a rewiring formation layer as an insulating layer on a surface of the semiconductor chip from which the substrate and the temporary fixing film are peeled;

[0194] (F) a step of forming a rewiring layer as a conductor layer on the rewiring formation layer; and

[0195] (G) a step of forming a solder resist layer on the rewiring layer. Further, the above-described manufacturing method of a semiconductor chip package can include:

[0196] (H) a step of singulating a plurality of semiconductor chip packages into one semiconductor chip package.

[0197] (Step (A))

[0198] Step (A) is a step of stacking a temporary fixing film on a substrate. The stacking conditions of the substrate and the temporary fixing film can be the same as those in the manufacturing method of a circuit substrate.

[0199] As the substrate, for example, a silicon wafer; a glass wafer; a glass substrate; a metal substrate such as copper, titanium, stainless steel, cold-rolled steel sheet (SPCC); a substrate obtained by impregnating glass fibers with an epoxy resin or the like and performing a heat curing treatment; a substrate formed of a bismaleimide triazine resin such as a BT resin; and the like can be exemplified.

[0200] The temporary fixing film can use an arbitrary material capable of being peeled from a semiconductor chip and capable of temporarily fixing the semiconductor chip. As a commercial product, for example, "REVALPHA" manufactured by Nitto Electric Industrial Co., Ltd. or the like can be exemplified.

[0201] (Step (B))

[0202] The process (B) is a process of temporarily fixing the semiconductor chips to the temporary fixing film. The temporary fixing of the semiconductor chips can be performed using, for example, a flip chip bonder, a die bonder, or the like. The layout of the arrangement of the semiconductor chips and the number of the semiconductor chips can be appropriately set according to the shape, size, and the number of the target semiconductor chip package, and the like, and, for example, the semiconductor chips can be arranged in a matrix of a plurality of rows and a plurality of columns to be temporarily fixed.

[0203] (Process (C))

[0204] The process (C) is a process of forming a sealing layer on the semiconductor chips. The sealing layer is formed of the cured product of the resin composition described above. The sealing layer is usually formed by a method including a process of forming a resin composition layer on the semiconductor chips and a process of thermally curing the resin composition layer to form the sealing layer.

[0205] The resin composition layer is preferably formed by compression molding using the excellent compression moldability of the resin composition. For the compression molding, the semiconductor chips and the resin composition are usually arranged in a mold, in which the resin composition is subjected to compression and, if necessary, heating, to form a resin composition layer covering the semiconductor chips.

[0206] The specific operation of the compression molding can be performed, for example, in the following manner. As a mold for compression molding, an upper mold (upper die) and a lower mold (lower die) are prepared. In addition, the resin composition is applied to the semiconductor chips temporarily fixed on the temporary fixing film as described above. The semiconductor chips to which the resin composition is applied are mounted on the lower mold together with the substrate and the temporary fixing film. Then, the upper mold and the lower mold are closed, and heat and pressure are applied to the resin composition to perform compression molding.

[0207] In addition, the specific operation of the compression molding can be performed, for example, in the following manner. As a mold for compression molding, an upper mold and a lower mold are prepared. The resin composition is placed in the lower mold. In addition, the semiconductor chips are mounted on the upper mold together with the substrate and the temporary fixing film. Then, the upper mold and the lower mold are closed in such a manner that the resin composition placed in the lower mold is in contact with the semiconductor chips mounted in the upper mold, and heat and pressure are applied to perform compression molding.

[0208] The molding conditions vary depending on the composition of the resin composition, and appropriate conditions can be employed to achieve good sealing. For example, the temperature of the mold at the time of molding is preferably a temperature at which the resin composition can exhibit excellent compression moldability, more preferably 80°C or higher, further more preferably 100°C or higher, particularly preferably 120°C or higher, more preferably 200°C or lower, further more preferably 170°C or lower, particularly preferably 150°C or lower. In addition, the pressure applied at the time of molding is more preferably 1 MPa or higher, further more preferably 3 MPa or higher, particularly preferably 5 MPa or higher, more preferably 50 MPa or lower, further more preferably 30 MPa or lower, particularly preferably 20 MPa or lower. The curing time is more preferably 1 minute or longer, further more preferably 2 minutes or longer, particularly preferably 5 minutes or longer, more preferably 60 minutes or shorter, further more preferably 30 minutes or shorter, particularly preferably 20 minutes or shorter. Generally, the mold is removed after the resin composition layer is formed. The removal of the mold can be performed before the heat curing of the resin composition layer, or can be performed after the heat curing.

[0209] The resin composition layer is formed, for example, by laminating the resin sheet with the semiconductor chip. For example, the resin composition layer can be formed on the semiconductor chip by heat pressure bonding the resin composition layer of the resin sheet with the semiconductor chip. The lamination of the resin sheet with the semiconductor chip can generally be performed using the semiconductor chip instead of the substrate, in the same manner as the lamination of the resin sheet with the substrate in the method for manufacturing the circuit board.

[0210] After the resin composition layer is formed on the semiconductor chip, the resin composition layer is heat cured to obtain a sealing layer covering the semiconductor chip. Thus, the sealing of the semiconductor chip with the cured product of the resin composition is performed. The heat curing conditions of the resin composition layer can employ the same conditions as the heat curing conditions of the resin composition layer in the method for manufacturing the circuit board. Furthermore, a pre-heating treatment of heating at a temperature lower than the curing temperature can be performed on the resin composition layer before the heat curing of the resin composition layer. The treatment conditions of the pre-heating treatment can employ the same conditions as the pre-heating treatment in the method for manufacturing the circuit board.

[0211] (Step (D))

[0212] Step (D) is a step of peeling the substrate and the temporary fixing film from the semiconductor chip. The peeling method desirably employs a suitable method in accordance with the material of the temporary fixing film. As the peeling method, for example, a method of peeling by heating, foaming, or expanding the temporary fixing film can be given. In addition, as the peeling method, for example, a method of peeling by irradiating ultraviolet rays through the substrate to the temporary fixing film to lower the adhesion of the temporary fixing film can be given.

[0213] In the method of peeling by heating, foaming or expanding the temporary fixing film, the heating conditions are usually 100°C to 250°C for 1 second to 90 seconds or 5 minutes to 15 minutes. In the method of peeling by irradiating ultraviolet rays to decrease the adhesion of the temporary fixing film, the amount of irradiation of the ultraviolet rays is usually 10 mJ / cm 2 ~ 1000 mJ / cm 2 .

[0214] (Step (E))

[0215] Step (E) is a step of forming a re-wiring layer as an insulating layer on the surface of the semiconductor chip from which the substrate and the temporary fixing film are peeled.

[0216] As the material of the re-wiring layer, any material having insulating properties can be used. Among them, from the viewpoint of the easiness of manufacturing of the semiconductor chip package, a photosensitive resin and a thermosetting resin are preferable. As the thermosetting resin, the resin composition of the present application can be used.

[0217] After the re-wiring layer is formed, a via hole can be formed in the re-wiring layer in order to interconnect the semiconductor chip and the re-wiring layer.

[0218] In the method of forming a via hole when the material of the re-wiring layer is a photosensitive resin, active energy rays are usually irradiated through a mask pattern to the surface of the re-wiring layer, and the re-wiring layer of the irradiated portion is photocured. As the active energy rays, ultraviolet rays, visible rays, electron beams, X-rays and the like can be exemplified, and ultraviolet rays are particularly preferable. The amount of irradiation and the irradiation time of the ultraviolet rays can be appropriately set according to the photosensitive resin. As the exposure method, a contact exposure method in which the mask pattern is closely adhered to the re-wiring layer and exposed, a non-contact exposure method in which the mask pattern is not closely adhered to the re-wiring layer and exposed using parallel light, and the like can be exemplified.

[0219] After the re-wiring layer is photocured, the re-wiring layer is developed to remove the unexposed portion, and a via hole is formed. The development can be performed by either of wet development and dry development. As the development method, a dipping method, a puddle method, a spray method, a brush coating method, a scraping method and the like can be exemplified, and the puddle method is preferable from the viewpoint of resolution.

[0220] As the method of forming a via hole when the material of the re-wiring layer is a thermosetting resin, laser irradiation, etching, mechanical drilling and the like can be exemplified. Among them, laser irradiation is preferable. The laser irradiation can be performed using an appropriate laser processing machine using a light source such as a carbon dioxide laser, a UV-YAG laser, an excimer laser and the like.

[0221] The shape of the through-hole is not particularly limited, but is generally circular (substantially circular). The top diameter of the through-hole is preferably 50 μm or less, more preferably 30 μm or less, further more preferably 20 μm or less, preferably 3 μm or more, more preferably 10 μm or more, further more preferably 15 μm or more. Here, the top diameter of the through-hole refers to the opening diameter of the through-hole on the surface of the re-wiring formation layer.

[0222] (Step (F))

[0223] Step (F) is a step of forming a re-wiring layer as a conductor layer on the re-wiring formation layer. The method of forming the re-wiring layer on the re-wiring formation layer can be the same as the method of forming a conductor layer on an insulating layer in the method of manufacturing a circuit substrate. Further, step (E) and step (F) can be repeatedly performed to alternately stack (layer) the re-wiring layer and the re-wiring formation layer.

[0224] (Step (G))

[0225] Step (G) is a step of forming a solder resist layer on the re-wiring layer. The material of the solder resist layer can use any material having insulating properties. Among them, from the viewpoint of the ease of manufacturing of the semiconductor chip package, a photosensitive resin and a thermosetting resin are preferable. Further, as the thermosetting resin, the resin composition of the present application can be used.

[0226] Further, in step (G), bump processing of forming a bump can be performed as necessary. The bump processing can be performed by a method such as a solder ball, solder plating, and the like. In addition, the formation of the through-hole in the bump processing can be performed in the same manner as in step (E).

[0227] (Step (H))

[0228] In addition to steps (A) to (G), the method of manufacturing a semiconductor chip package can further include step (H). Step (H) is a step of singulating a plurality of semiconductor chip packages by cutting the semiconductor chip packages one by one. The method of cutting the semiconductor chip packages into the semiconductor chip packages one by one is not particularly limited.

[0229] < Semiconductor Device >

[0230] The semiconductor device has the semiconductor chip package. As the semiconductor device, various semiconductor devices for use in electrical products (for example, computers, portable telephones, smartphones, tablet devices, wearable devices, digital cameras, medical devices, televisions, and the like) and vehicles (for example, motorcycles, automobiles, electric trains, ships, and aircraft, and the like) can be cited. Example

[0231] The present application will be specifically described below by way of examples. The present application is not limited to these examples. Note that, in the following, "parts" and "%" each represent "mass parts" and "mass %" unless otherwise specified.

[0232] Example 1

[0233] A resin composition was produced by uniformly dispersing 2 parts of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA CORPORATION, epoxy equivalent 115 g / eq.), 3 parts of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by TOA GOHSEI CO., LTD., viscosity (25°C) 500 mPa s, Mw 2000, Tg -80°C), 6 parts of a bisphenol A type epoxy resin ("EXA-850CRP" manufactured by DIC CORPORATION, epoxy equivalent 170 to 175 g / eq.), 6 parts of an acid anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rika Co., Ltd., acid anhydride equivalent 179 g / eq.), 83 parts of silica A, and 0.1 part of an imidazole curing agent ("2E4MZ" manufactured by SHIKOKU KAGAKU CO., LTD., 2-ethyl-4-methylimidazole) using a mixer.

[0234] Example 2

[0235] A resin composition was produced in the same manner as in Example 1, except that 1 part of a liquid acrylic polymer ("UG-4010" manufactured by TOA GOHSEI CO., LTD., viscosity (25°C) 3700 mPa s, Mw 2900, Tg -57°C) was used instead of 1 part of the liquid acrylic polymer ("UP-1020" manufactured by TOA GOHSEI CO., LTD.).

[0236] Example 3

[0237] A resin composition was produced in the same manner as in Example 1, except that 1 part of a liquid acrylic polymer ("US-6100" manufactured by TOA GOHSEI CO., LTD., viscosity (25°C) 2300 mPa s, Mw 2500, Tg -58°C) was used instead of 1 part of the liquid acrylic polymer ("UP-1020" manufactured by TOA GOHSEI CO., LTD.).

[0238] Example 4

[0239] A resin composition was produced by uniformly dispersing 1 part of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA CORPORATION, epoxy equivalent 115 g / eq.), 10 parts of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by TOA GOHSEI CO., LTD., viscosity (25°C) 500 mPa-s, Mw 2000, Tg -80°C), 6 parts of a bisphenol A type epoxy resin ("EXA-850CRP" manufactured by DIC CORPORATION, epoxy equivalent 170 to 175 g / eq.), 1 part of a phenol-based curing agent ("MEH-8000H" manufactured by Meiwa Plastic Industries, LTD.), 83 parts of silica A, and 0.4 parts of an imidazole-based curing agent ("2E4MZ" manufactured by Shikoku Chemicals Corporation, 2-ethyl-4-methylimidazole) using a mixer.

[0240] Example 5

[0241] A resin composition was produced in the same manner as in Example 4, except that 1 part of an amine-based curing agent ("KAYABOND C-200S" manufactured by Nippon Kayaku Co., LTD.) was used instead of 1 part of the phenol-based curing agent ("MEH-8000H" manufactured by Meiwa Plastic Industries, LTD.).

[0242] Example 6

[0243] A resin composition was produced in the same manner as in Example 1, except that 95 parts of alumina A was used instead of 83 parts of silica A.

[0244] Example 7

[0245] A resin composition was produced in the same manner as in Example 1, except that the amount of the glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.) was increased to 3.5 parts and the amount of the liquid acrylic polymer ("UP-1020" manufactured by TOA GOHSEI CO., LTD.) was decreased to 0.5 parts.

[0246] Example 8

[0247] A resin composition was produced by uniformly dispersing 4 parts of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent 115 g / eq.), 9 parts of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by Toagosei Co., Ltd., viscosity (25°C) 500 mPa-s, Mw 2000, Tg -80°C), 4 parts of an anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rika Co., Ltd., anhydride equivalent 179 g / eq.), 83 parts of silica A, and 0.1 part of an imidazole curing agent ("2E4MZ" manufactured by Shikoku Chemicals Corporation, 2-ethyl-4-methylimidazole) using a mixer.

[0248] Example 9

[0249] A resin composition was produced by uniformly dispersing 1 part of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent 115 g / eq.), 1 part of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by Toagosei Co., Ltd., viscosity (25°C) 500 mPa-s, Mw 2000, Tg -80°C), 9 parts of a bisphenol A type epoxy resin ("EXA-850CRP" manufactured by DIC Corporation, epoxy equivalent 170 to 175 g / eq.), 6 parts of an anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rika Co., Ltd., anhydride equivalent 179 g / eq.), 83 parts of silica A, and 0.1 part of an imidazole curing agent ("2E4MZ" manufactured by Shikoku Chemicals Corporation, 2-ethyl-4-methylimidazole) using a mixer.

[0250] Example 10

[0251] A resin composition was produced by uniformly dispersing 4 parts of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent 115 g / eq.), 9 parts of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by Toagosei Co., Ltd., viscosity (25°C) 500 mPa-s, Mw 2000, Tg -80°C), 4 parts of an anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rika Co., Ltd., anhydride equivalent 179 g / eq.), 83 parts of silica A, and 0.1 part of an imidazole curing agent ("2E4MZ" manufactured by Shikoku Chemicals Corporation, 2-ethyl-4-methylimidazole) using a mixer.

[0252] Comparative Example 1

[0253] A resin composition was produced by uniformly dispersing 4 parts of a glycidyl amine type epoxy resin ("EP-3980S" manufactured by ADEKA Corporation, epoxy equivalent 115 g / eq.), 9 parts of a glycidyl amine type epoxy resin ("630LSD" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 95 g / eq.), 1 part of a liquid acrylic polymer ("UP-1020" manufactured by Toagosei Co., Ltd., viscosity (25°C) 500 mPa-s, Mw 2000, Tg -80°C), 4 parts of an anhydride curing agent ("HNA-100" manufactured by Shin Nippon Rika Co., Ltd., anhydride equivalent 179 g / eq.), 83 parts of silica A, and 0.1 part of an imidazole curing agent ("2E4MZ" manufactured by Shikoku Chemicals Corporation, 2-ethyl-4-methylimidazole) using a mixer.

[0254] <Inorganic Filler Used>

[0255] Silica A: average particle diameter 6.0 μm, maximum cut diameter 20 μm, specific surface area 4.8 m2 / g, spherical silica treated with KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) 2 Silica A: average particle diameter 6.0 μm, maximum cut diameter 20 μm, specific surface area 4.8 m2 / g, spherical silica treated with KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)

[0256] Alumina A: average particle diameter 4.8 μm, maximum cut diameter 24 μm, specific surface area 2.7 m2 / g, spherical alumina treated with KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.) 2 Alumina A: average particle diameter 4.8 μm, maximum cut diameter 24 μm, specific surface area 2.7 m2 / g, spherical alumina treated with KBM573 (N-phenyl-3-aminopropyltrimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)

[0257] <Experiment Example 1: Evaluation of warpage>

[0258] A resin composition produced in each of the examples and comparative examples was compression-molded on a 12-inch silicon wafer using a compression molding device (mold temperature: 130°C, pressure: 6 MPa, curing time: 10 minutes) to form a resin composition layer having a thickness of 300 μm. Then, the resin composition layer was heat-cured at 180°C for 90 minutes. Thus, a test substrate including a cured product layer of the resin composition and the silicon wafer was obtained. The test substrate was measured for warpage at 25°C using a shadow moire measuring device ("Thermoire AXP" manufactured by Akorometrix Co.). The measurement was performed in accordance with JEITA EDX-7311-24 of the Electronic Information Technology Industry Association. Specifically, a fitting plane obtained by the least square method for all data of the substrate surface in a measurement region was used as a reference surface, and the difference between the minimum value and the maximum value in the perpendicular direction from the reference surface was obtained as the warpage. The warpage was evaluated as "O" when it was less than 2 mm, as "Δ" when it was 2 mm or more and less than 3 mm, and as "X" when it was 3 mm or more.

[0259] <Experiment Example 2: Evaluation of appearance>

[0260] The appearance of the resin layer of the test substrate produced in Experiment Example 1 was observed. The case where the area occupied by flow marks in the entire resin layer surface was less than 20% was evaluated as "O", and the case where the area exceeded 20% was evaluated as "Δ".

[0261] <Experiment Example 3: Evaluation of adhesion after high temperature and high humidity environment test (HAST)>

[0262] A high temperature and high humidity environment test (HAST) was performed using the test sample substrate produced in Test Example 1 under conditions of 130°C, 85% RH, and 96 hours. The cured product after HAST was ground using #180 sandpaper to a thickness of 50 μm for the resin layer. The ground sample was cut into test pieces of 1 cm square, a φ 2.7 mm adhesive-coated stud pin was vertically erected with respect to the resin layer, and heating was performed at 150°C for 60 minutes to produce a test piece in which the stud pin was bonded to the resin layer. A vertical tensile test was performed on the resulting test piece with the stud pin using a vertical tensile tester, ROMULUS, manufactured by QUAD GROUP, at a test speed of 0.1 kg / sec. The test was performed on five test pieces, and the average was calculated. The case in which the adhesion strength exceeded 500 kgf / cm 2 was evaluated as "O", and the case in which the adhesion strength was less than 500 kgf / cm 2 was evaluated as "X".

[0263] The nonvolatile components of the resin compositions of the examples and comparative examples, the amounts used, and the evaluation results of the test examples are shown in Table 1 below.

[0264] [Table 1]

[0265] .

[0266] As is clear from the above results, in the case where (A-1) is a glycidyl amine type epoxy resin and (B) is a (meth)acrylic polymer that is liquid at 25°C, warping of the cured product can be inhibited, and excellent adhesion of the cured product film to a load in the vertical direction after environmental testing can also be achieved.

Claims

1. A resin composition comprising (A) an epoxy resin, (B) a (meth) acrylic polymer which is in a liquid state at 25°C, (C) a curing agent, and (D) an inorganic filler, wherein, (A) component contains (A-1) glycidyl amine type epoxy resin, (A-1) component contains a glycidyl amine type epoxy resin represented by the following formula (A-1), in the formula (A-1), n each independently represents an integer of 0 to 4, m represents an integer of 1 to 3, R 11 each independently represents a monovalent hydrocarbon group, R 12 represents a hydrogen atom, or a monovalent to trivalent hydrocarbon group, the content of the (A-1) component is 10% by mass or more and 80% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass, the content of the (B) component is 0.5% by mass or more and 30% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass, the content of the (D) component is 70% by mass or more when the total non-volatile components in the resin composition are taken as 100% by mass.

2. The resin composition according to claim 1, wherein, the content of the (A) component is 10% by mass or more and 95% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

3. The resin composition according to claim 1, wherein, the content of the (A) component is 35% by mass or more and 88% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

4. The resin composition according to claim 1, wherein, in the formula (A-1), m represents 1.

5. The resin composition according to claim 1, wherein, In formula (A-1), the monovalent hydrocarbon group for R 11 and R 12 is an alkyl group.

6. The resin composition according to claim 1, wherein, the content of the (A-1) component is 20% by mass or more and 80% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

7. The resin composition according to claim 1, wherein the content of the (A-1) component is 25% by mass or more and 75% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

8. The resin composition according to claim 1, wherein, the content of the (B) component is 0.5% by mass or more and 20% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

9. The resin composition according to claim 1, wherein, the content of the (B) component is 2% by mass or more and 10% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

10. The resin composition according to claim 1, wherein, the (C) component is a curing agent selected from the group consisting of phenol-based curing agents, naphthol-based curing agents, acid anhydride-based curing agents, active ester-based curing agents, amine-based curing agents, and imidazole-based curing agents.

11. The resin composition according to claim 1, wherein the (C) component is a curing agent selected from the group consisting of phenol-based curing agents, naphthol-based curing agents, acid anhydride-based curing agents, amine-based curing agents, and imidazole-based curing agents.

12. The resin composition according to claim 1, wherein, the content of the (C) component is 0.1% by mass or more and 70% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

13. The resin composition according to claim 1, wherein, the content of the (C) component is 5% by mass or more and 55% by mass or less when the non-volatile components other than the (D) component in the resin composition are taken as 100% by mass.

14. The resin composition according to claim 1, wherein, the content of the (D) component is 80% by mass or more when the total non-volatile components in the resin composition are taken as 100% by mass.

15. The resin composition according to claim 1, wherein, the content of the (D) component is 98% by mass or less when the total non-volatile components in the resin composition are taken as 100% by mass.

16. The resin composition according to claim 1, wherein, the content of the (D) component is 90% by mass or less when the total non-volatile components in the resin composition are taken as 100% by mass.

17. The resin composition according to claim 1, which is used for forming an insulating layer of a semiconductor chip package.

18. The resin composition according to claim 1, which is used for forming an insulating layer of a circuit substrate.

19. The resin composition according to claim 1, which is used for sealing a semiconductor chip of a semiconductor chip package.

20. A cured product, which is a cured product of any one of the resin compositions according to claims 1 to 19.

21. A resin sheet, which has: a support body, and a resin composition layer containing the resin composition according to any one of claims 1 to 19 provided on the support body.

22. A circuit substrate, which comprises an insulating layer formed from a cured product of any one of the resin compositions according to claims 1 to 19.

23. A semiconductor chip package, which comprises: the circuit substrate according to claim 22, and a semiconductor chip mounted on the circuit substrate.

24. A semiconductor device, which comprises the semiconductor chip package according to claim 23.

25. A semiconductor chip package, which comprises: a semiconductor chip, and a cured product of any one of the resin compositions according to claims 1 to 19, which seals the semiconductor chip.

26. A semiconductor device, which comprises the semiconductor chip package according to claim 25. ​ ​ ​ ​ ​ ​

Images