Radiation detector and method for manufacturing radiation detector

Abstract

The radiation detector comprises: a substrate having a first electrode portion; a radiation absorbing layer arranged on one side relative to the substrate and composed of a plurality of perovskite crystals; and a second electrode portion arranged on one side relative to the radiation absorbing layer and facing the first electrode portion via the radiation absorbing layer. In the radiation absorbing layer, the plurality of perovskite crystals are formed in a region between the first electrode portion and the second electrode portion so as to extend with a first direction in which the first electrode portion and the second electrode portion face each other as a long side direction.

Description

Technical Field

[0001] The present invention relates to a radiation detector and a method for manufacturing the radiation detector. Background Art

[0002] As a material for a radiation absorption layer that can be applied to a radiation detector, a perovskite material is disclosed. Perovskite materials are cheaper than CsI, a-Se, CdTe, etc., and therefore are expected to have advantages in technical fields that require large-area radiation detectors (e.g., medical fields, non-destructive inspection fields, etc.). Non-patent document 1 describes a direct conversion type radiation detector having a radiation absorption layer formed of a perovskite material.

[0003] Prior art literature

[0004] Non-patent literature

[0005] Non-patent document 1: “Detection of X-ray photons by solution-processed leadhalide perovskites”, NATURE PHOTONICS, UK, Nature publishing Group, May 25, 2015, Vol. 9, p. 444-449 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In the above-mentioned direct conversion type radiation detector, from the viewpoint of ensuring the radiation absorption efficiency, it is preferable that the thickness of the radiation absorption layer is large. However, if the thickness of the radiation absorption layer is increased, the movement distance of the charges (electrons and holes) generated in the radiation absorption layer due to the absorption of radiation will increase, so there is a concern that the charge collection efficiency will decrease or the crosstalk between multiple pixels will increase.

[0008] Therefore, an object of the present invention is to provide a radiation detector capable of suppressing a decrease in charge collection efficiency or an increase in crosstalk between a plurality of pixels while ensuring radiation absorption efficiency, and a method for manufacturing such a radiation detector.

[0009] Technical means of solving problems

[0010] A radiation detector according to one aspect of the present invention comprises: a substrate having a first electrode portion; a radiation absorbing layer arranged on one side relative to the substrate and composed of a plurality of perovskite crystals; and a second electrode portion arranged on one side relative to the radiation absorbing layer and opposite to the first electrode portion via the radiation absorbing layer; in an area between the first electrode portion and the second electrode portion in the radiation absorbing layer, the plurality of perovskite crystals are respectively formed in a manner extending with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a long side direction.

[0011] In the radiation detector, the radiation absorption layer is composed of a plurality of perovskite crystals, and in the region between the first electrode portion and the second electrode portion in the radiation absorption layer, the plurality of perovskite crystals are respectively formed in a manner extending with the first direction in which the first electrode portion and the second electrode portion are opposite to each other as the long side direction. Thus, even if the thickness of the radiation absorption layer is increased in order to ensure the absorption efficiency of radiation, for example, in the case where the first electrode portion is composed of a plurality of first electrodes, the decrease in the collection efficiency of charges in the plurality of first electrodes or the increase in crosstalk between the plurality of first electrodes can be suppressed. Therefore, according to the radiation detector, the decrease in the collection efficiency of charges or the increase in crosstalk between a plurality of pixels can be suppressed and the absorption efficiency of radiation can be ensured.

[0012] In the radiation detector of one aspect of the present invention, the length of the perovskite crystal in the first direction in the region between the first electrode portion and the second electrode portion may be greater than 2 when the width of the perovskite crystal in the second direction perpendicular to the first direction is set to 1. This makes it possible to more reliably suppress a decrease in charge collection efficiency or an increase in crosstalk between a plurality of pixels.

[0013] In the radiation detector of one aspect of the present invention, the length of the perovskite crystal in the first direction in the region between the first electrode portion and the second electrode portion may be 10 μm or more, thereby easily increasing the thickness of the radiation absorption layer, and thus easily and reliably ensuring the radiation absorption efficiency.

[0014] In the radiation detector of one aspect of the present invention, the first electrode portion may be composed of a plurality of first electrodes, and in the region between the first electrode portion and the second electrode portion, the width of the perovskite crystal in the second direction perpendicular to the first direction is less than the arrangement pitch of the plurality of first electrodes. Alternatively, in the radiation detector of one aspect of the present invention, the second electrode portion may be composed of a plurality of second electrodes, and in the region between the first electrode portion and the second electrode portion, the width of the perovskite crystal in the second direction perpendicular to the first direction is less than the arrangement pitch of the plurality of second electrodes. Thus, it is possible to more reliably suppress the increase of crosstalk between a plurality of pixels.

[0015] In the radiation detector according to one aspect of the present invention, the abundance ratio of the perovskite crystals in the region between the first electrode portion and the second electrode portion may be 80% or more, thereby making it possible to more reliably ensure the radiation absorption efficiency.

[0016] In the radiation detector according to one aspect of the present invention, the perovskite crystal may be in contact with at least one other perovskite crystal in the region between the first electrode portion and the second electrode portion, thereby making it possible to more reliably ensure the radiation absorption efficiency.

[0017] In the radiation detector according to one aspect of the present invention, the length of the perovskite crystal in the first direction in the region between the first electrode portion and the second electrode portion may be smaller than the thickness of the radiation absorbing layer in the first direction. Thus, even if the thickness of the radiation absorbing layer is increased in order to ensure the radiation absorption efficiency, the radiation absorbing layer composed of a plurality of perovskite crystals each extending with the first direction as the long side direction can be reliably formed.

[0018] In the radiation detector according to one aspect of the present invention, the thickness of the radiation absorbing layer in the first direction may be 100 μm or more in the region between the first electrode portion and the second electrode portion, thereby more reliably ensuring the radiation absorption efficiency.

[0019] A method for manufacturing a radiation detector according to one aspect of the present invention comprises: a first step of generating mist from a solution containing a perovskite material; a second step of mixing the mist with a carrier gas; a third step of blowing a carrier gas containing the mist onto a substrate having a first electrode portion while the substrate is heated, thereby forming a plurality of perovskite crystals in an area on the substrate corresponding to the first electrode portion in a manner extending along the thickness direction of the substrate as the long side direction, and forming a radiation absorption layer composed of the plurality of perovskite crystals on one side relative to the substrate; and a fourth step of forming a second electrode portion on one side relative to the radiation absorption layer, the second electrode portion being opposite to the first electrode portion via the area corresponding to the first electrode portion.

[0020] According to this method of manufacturing a radiation detector, it is possible to manufacture a radiation detector including the radiation absorbing layer as described above.

[0021] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the first step, mist may be generated from the solution by ultrasonic vibration. This makes it possible to easily and reliably generate a preferable mist.

[0022] In the method for manufacturing a radiation detector according to one aspect of the present invention, the dilution gas may be mixed with the carrier gas in the second step. This allows the concentration of mist, which is important for forming a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction, to be adjusted.

[0023] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the third step, the substrate may be heated to a temperature of 110° C. to 170° C. This can reliably form a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction.

[0024] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the third step, the substrate may be heated to a temperature of 130° C. to 170° C. This allows more reliable formation of a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction.

[0025] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the second step, the carrier gas may be supplied at a flow rate of 0.25 L / min or more and less than 0.45 L / min. This can reliably form a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction.

[0026] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the second step, the carrier gas may be supplied at a flow rate of 0.30 L / min or more and less than 0.45 L / min. This allows for more reliable formation of a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction.

[0027] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the first step, a solution containing the perovskite material may be generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:0 or more and 10 or less. Thus, a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction can be reliably formed.

[0028] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the first step, a solution containing the perovskite material may be generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:0 to 5. This allows a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction to be formed more reliably.

[0029] In the method for manufacturing a radiation detector according to one aspect of the present invention, in the third step, the substrate may be heated to a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit. This can reliably form a plurality of perovskite crystals extending along the thickness direction of the substrate as the longitudinal direction.

[0030] Effects of the Invention

[0031] According to the present invention, it is possible to provide a radiation detector capable of suppressing a decrease in charge collection efficiency or an increase in crosstalk between a plurality of pixels while ensuring radiation absorption efficiency, and a method for manufacturing such a radiation detector. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a partial cross-sectional view of a radiation detector according to an embodiment.

[0033] Figure 2 yes Figure 1 Diagram of the structure of a radiation detector.

[0034] Figure 3 It is used for Figure 1 A schematic diagram illustrating a method for manufacturing a radiation detector.

[0035] Figure 4 This is a cross-sectional view of the radiation absorbing layer when the temperature of the substrate is changed.

[0036] Figure 5 This is a diagram showing the results of X-ray diffraction when the temperature of the substrate is changed.

[0037] Figure 6 It is a cross-sectional view of the radiation absorbing layer when the flow rate of the carrier gas is changed.

[0038] Figure 7 This is a diagram showing the results of X-ray diffraction when the flow rate of the carrier gas is changed.

[0039] Figure 8 1 and 2 are a plan view and a cross-sectional view of the radiation absorbing layer in Example 1.

[0040] Fig. 9 These are plan views and cross-sectional views of the radiation absorbing layers in Comparative Examples 1 to 3.

[0041] Fig.10 These are a plan view and a cross-sectional view of the radiation absorbing layer in Examples 2 and 3.

[0042] Fig.11 This is a schematic diagram for explaining the mechanism when a plurality of long strip-shaped perovskite crystals are not formed.

[0043] Fig.12 This is a schematic diagram for explaining the mechanism when a plurality of long strip-shaped perovskite crystals are formed. DETAILED DESCRIPTION

[0044] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In each of the drawings, the same or corresponding parts are denoted by the same reference numerals, and repeated descriptions are omitted.

[0045] [Structure of the radiation detector]

[0046] like Figure 1 As shown, the radiation detector 1 includes a panel (substrate) 10, a radiation absorbing layer 4, and an electrode 6. The radiation detector 1 is a solid-state imaging device that detects X-rays as radiation in order to form an X-ray transmission image. In the radiation detector 1, the second electrode unit is composed of one electrode 6.

[0047] The panel 10 has a support substrate 11 made of an insulating material such as glass, and a functional layer 12 provided with a plurality of pixels P. Each pixel P includes an electrode 13, a capacitor 14, and a thin film transistor 15. In the radiation detector 1, the first electrode portion is composed of a plurality of electrodes 13. One electrode of the capacitor 14 is electrically connected to the electrode 13. The other electrode of the capacitor 14 is electrically connected to the ground potential. One current terminal of the thin film transistor 15 is electrically connected to the wiring that electrically connects one electrode of the capacitor 14 to the electrode 13. The other current terminal of the thin film transistor 15 is electrically connected to the readout wiring R. The control terminal of the thin film transistor 15 is electrically connected to the row selection wiring Q.

[0048] The thin film transistor 15 has a structure as a field effect transistor (FET) or a bipolar transistor. When the thin film transistor 15 has a structure as a FET, the control terminal is equivalent to the gate, and the current terminal is equivalent to the source or drain. When the thin film transistor 15 has a structure as a bipolar transistor, the control terminal is equivalent to the base, and the current terminal is equivalent to the collector or emitter.

[0049] like Figure 2 As shown, in the panel 10, a plurality of pixels P are arranged in a matrix. m，n It refers to the pixel located in the mth row and nth column. m is an integer greater than 1 and less than M (an integer greater than 2), and n is an integer greater than 1 and less than N (an integer greater than 2). m，n The control terminals of the thin film transistors 15 included in each of the thin film transistors 15 are shown in FIG. Figure 1 ) and a row selection wiring Q arranged in the mth row m The M pixels P arranged in the nth column are electrically connected. m，n The other current terminal of the thin film transistor 15 included in each (refer to Figure 1 ) and one readout wiring R arranged in the nth column n Electrical connection.

[0050] like Figure 1As shown, the radiation absorbing layer 4 is arranged on the surface 10a of one side of the panel 10. That is, the radiation absorbing layer 4 is arranged on one side relative to the panel 10. The radiation absorbing layer 4 is composed of a plurality of perovskite crystals 40. As the perovskite material constituting the perovskite crystals 40, PbX2 (X = Cl, Br, I) and CsY (Y = Cl, Br, I) (for example, CsPbBr3, etc.) can be exemplified. In the radiation absorbing layer 4, if the incident X-rays are absorbed, charges (electrons and holes) are generated according to the amount of absorption.

[0051] The thickness of the radiation absorbing layer 4 is, for example, 1 μm to 2 mm. If the thickness of the radiation absorbing layer 4 is 100 μm or more, the absorption efficiency of X-rays is improved. If the thickness of the radiation absorbing layer 4 is 1 mm or less, the disappearance of charges generated by the absorption of X-rays (i.e., the disappearance caused by the recombination of electrons and holes) is suppressed, and the charge collection efficiency is improved.

[0052] The electrode 6 is arranged on the surface 4a of one side of the radiation absorbing layer 4. That is, the electrode 6 is arranged on one side relative to the radiation absorbing layer 4. The electrode 6 is opposite to the plurality of electrodes 13 via the radiation absorbing layer 4. The electrode 6 is formed of a conductive material. Examples of the conductive material include metals such as aluminum, gold, silver, platinum, and titanium, conductive metal oxides such as indium oxide (ITO) added with tin, tin oxide (FTO) added with fluorine, tin oxide (SnO2), indium zinc oxide (IZO), and zinc oxide (ZnO), and organic conductive materials including conductive polymers.

[0053] The radiation detector 1 constructed as described above is used as follows. Figure 2 As shown, the electrode 6 of the radiation detector 1 is electrically connected to the bias voltage supply power supply 21. The bias voltage supply power supply 21 applies a bias voltage to the electrode 6 so as to generate a negative potential difference with respect to the plurality of electrodes 13 included in the panel 10. m The gate driver 22 is electrically connected. The readout wiring R of the radiation detector 1 n The gate driver 22, the charge-voltage converter group 23, the multiplexer 24 are electrically connected to the image processing unit 25, and the image processing unit 25 is electrically connected to the image display unit 26. The gate driver 22, the charge-voltage converter group 23, the multiplexer 24, etc. are sometimes formed on the panel 10 as a structure of the radiation detector 1.

[0054] In this state, if Figure 1As shown, X-rays irradiated to the imaging object are incident on the radiation absorbing layer 4. When the X-rays are absorbed by the radiation absorbing layer 4, charges (electrons and holes) are generated in the radiation absorbing layer 4 according to the amount of X-rays absorbed. The electrons generated in the radiation absorbing layer 4 are collected by the electrodes 13 of each pixel P and stored in the capacitors 14 of each pixel P. On the other hand, the holes generated in the radiation absorbing layer 4 are collected by the electrodes 6.

[0055] Then, if Figure 1 and Figure 2 As shown, from the gate driver 22, through the row selection wiring Q of the mth row m Send control signal, each pixel P in the mth row m，n The thin film transistor 15 is turned on. The gate driver 22 sequentially controls all the row selection wiring lines Q m The control signal is sent. m，n The charge (electrons) stored in the capacitor 14 is transmitted through the corresponding readout wiring R n The charge is input to the charge-voltage converter group 23, and the voltage signal corresponding to the charge is input to the multiplexer 24. The multiplexer 24 converts the charge to the voltage signal corresponding to each pixel P. m，n The voltage signal corresponding to the charge amount stored in the capacitor 14 is sequentially output to the image processing unit 25. The image processing unit 25 forms an X-ray transmission image of the imaging object based on the voltage signal input from the multiplexer 24, and displays the X-ray transmission image on the image display unit 26.

[0056] [Structure of perovskite crystal]

[0057] like Figure 1 As shown, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the perovskite crystal 40 is formed in a manner extending in the direction (first direction) D1 as the long side direction. That is, in the perovskite crystal 40, when the outer width of the perovskite crystal 40 becomes the largest in a certain direction, the direction is the direction along the direction D1. In other words, the perovskite crystal 40 can also be referred to as a columnar crystal or a long strip crystal with the direction D as the long side direction, or a columnar crystal or a long strip crystal extending in a manner along the direction D1. The perovskite crystal 40 is, for example, a polycrystal of a perovskite material. Furthermore, the direction D1 is the direction in which the plurality of electrodes 13 are opposite to the electrode 6, and is consistent with the thickness direction of the panel 10.

[0058] In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the length of the perovskite crystal 40 in the direction D1 is 2 or more when the width of the perovskite crystal 40 in the direction D2 (second direction) perpendicular to the direction D1 is 1. In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the length of the perovskite crystal 40 in the direction D1 is 10 μm or more. In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the length of the perovskite crystal 40 in the direction D1 is smaller than the thickness of the radiation absorbing layer 4 in the direction D1. In the present embodiment, the thickness of the radiation absorbing layer 4 in the direction D1 is 100 μm or more.

[0059] In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the width of the perovskite crystal 40 in the direction D2 is less than the arrangement pitch of the plurality of electrodes 13. In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the width of the perovskite crystal 40 in the direction D2 is less than 50 μm. In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the existence rate of the perovskite crystal 40 is 80% or more. In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the perovskite crystal 40 is in contact with at least one other perovskite crystal 40. Furthermore, the arrangement pitch of the plurality of electrodes 13 refers to the distance between the centers of the adjacent electrodes 13. In addition, the existence rate of the perovskite crystal 40 in a certain region refers to the ratio of the volume of the plurality of perovskite crystals 40 existing in the region to the volume of the region.

[0060] The shape, length, width and existence rate of the perovskite crystal 40 can be confirmed as follows. First, the radiation absorbing layer 4 is cut so that the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4 is divided into four equal parts in the direction D2 and the region is divided into four equal parts in the direction perpendicular to the directions D1 and D2. Then, the cross-sectional region between the plurality of electrodes 13 and the electrode 6 in each cross-sectional region of the radiation absorbing layer 4 (for a pair of opposite cross-sectional regions, any cross-sectional region can be observed). The shape, length, width and existence rate of the perovskite crystal 40 in the cross-sectional region can be estimated as the shape, length, width and existence rate of the perovskite crystal 40.

[0061] [Function and Effect]

[0062] In the radiation detector 1, the radiation absorption layer 4 is composed of a plurality of perovskite crystals 40, and in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorption layer 4, the plurality of perovskite crystals 40 are formed so as to extend in the direction D1 in which the plurality of electrodes 13 and the electrode 6 are opposite to each other as the long side direction. Thus, even if the thickness of the radiation absorption layer 4 is increased in order to ensure the absorption efficiency of radiation, the decrease in the collection efficiency of the charges in the plurality of electrodes 13 or the increase in the crosstalk between the plurality of electrodes 13 can be suppressed. The decrease in the collection efficiency of the charges in the plurality of electrodes 13 is suppressed because the movement speed of the charges is increased by reducing the gap between the grain boundaries in the radiation absorption layer 4. Therefore, according to the radiation detector 1, the decrease in the collection efficiency of the charges or the increase in the crosstalk between the plurality of pixels P can be suppressed and the absorption efficiency of radiation can be ensured.

[0063] In addition, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the length of the perovskite crystal 40 in the direction D1 is 2 or more when the width of the perovskite crystal 40 in the direction D2 perpendicular to the direction D1 is set to 1. Thus, it is possible to more reliably suppress a decrease in the charge collection efficiency or an increase in crosstalk between a plurality of pixels. Furthermore, from this viewpoint, the length of the perovskite crystal 40 in the direction D1 is more preferably 20 or more when the width of the perovskite crystal 40 in the direction D2 is set to 1.

[0064] In the region between the electrodes 13 and the electrode 6 in the radiation absorbing layer 4 , the length of the perovskite crystal 40 in the direction D1 is 10 μm or more. This makes it easy to increase the thickness of the radiation absorbing layer 4 , and thus easily and reliably ensure radiation absorption efficiency.

[0065] In addition, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the width of the perovskite crystal 40 in the direction D2 perpendicular to the direction D1 is equal to or less than the arrangement pitch of the plurality of electrodes 13. Thus, the increase of the crosstalk between the plurality of pixels P can be more reliably suppressed, and a sharper X-ray transmission image can be obtained.

[0066] Furthermore, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the presence rate of the perovskite crystals 40 is 80% or more. This makes it possible to more reliably ensure the radiation absorption efficiency.

[0067] Furthermore, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the perovskite crystal 40 is in contact with at least one other perovskite crystal 40. This makes it possible to more reliably ensure the radiation absorption efficiency.

[0068] In addition, in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4, the length of the perovskite crystal 40 in the direction D1 is smaller than the thickness of the radiation absorbing layer 4 in the direction D1. Thus, even if the thickness of the radiation absorbing layer 4 is increased in order to ensure the radiation absorption efficiency, the radiation absorbing layer 4 composed of the plurality of perovskite crystals 40 extending in the direction D1 as the long side direction can be reliably formed.

[0069] In the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4 , the thickness of the radiation absorbing layer 4 in the direction D1 is 100 μm or more. This makes it possible to more reliably ensure the radiation absorption efficiency.

[0070] [Method for manufacturing radiation detector]

[0071] First, the perovskite material is dissolved in a solvent to generate a precursor solution. Perovskite materials are, for example, PbX2 (X = Cl, Br, I) and CsY (Y = Cl, Br, I). Solvents are, for example, organic solvents such as γ-butyrolactone, N-methyl-2-pyrrolidone, N,N-dimethylformamide (DMF), and dimethyl sulfoxide (DMSO). However, as long as the solvent can dissolve the perovskite material, it can be composed of one solvent, or it can be composed of two or more solvents. When PbX2 and CsY are used as perovskite materials, the molar ratio of the perovskite material is, for example, PbX2:CsY=1:1~2:1, and the concentration of the perovskite material in the precursor solution is, for example, 10~100mmol / L.

[0072] Then, if Figure 3 As shown, the generated precursor solution S is placed in an atomizing container 51, and mist M is generated from the precursor solution S by ultrasonic vibration. That is, mist M is generated from a solution containing a perovskite material, i.e., the precursor solution S, by ultrasonic vibration (first step). The vibration frequency of the ultrasonic vibration is, for example, 2.4 MHz. By adjusting the vibration frequency of the ultrasonic vibration, the size of the mist M can be adjusted. Regarding the particle size of the mist M, if it exceeds 10 μm, the sedimentation rate of the mist M in the air exceeds 1 mm / second, and the mist M cannot be retained in the air. Therefore, it is preferably less than 10 μm.

[0073] Then, when the mist M is sufficiently generated and the amount of mist in the atomizing container 51 is stable, the carrier gas G1 and the dilution gas G2 are circulated to mix the mist M, the carrier gas G1, and the dilution gas G2, and the carrier gas G1 containing the mist M is delivered to the nozzle 53 via the flow path 52. That is, the mist M and the dilution gas G2 are mixed with the carrier gas G1 (second step). In the present embodiment, the mist M, the carrier gas G1, and the dilution gas G2 are mixed, but the mixed gas is referred to as the carrier gas G1 containing the mist M.

[0074] Next, the carrier gas G1 containing the mist M is blown from the nozzle 53 to the panel 10 which is placed on the stage 54 of the additional heating device and heated to a predetermined temperature (e.g., 150 to 200° C.). At this time, by operating the stage 54, the panel 10 is moved back and forth relative to the nozzle 53, for example, so that a predetermined amount of the mist M is attached to the surface 10a of the panel 10. Thus, the radiation absorption layer 4 composed of a plurality of perovskite crystals 40 is formed on the surface 10a of the panel 10. That is, the carrier gas G1 containing the mist M is blown to the panel 10 while the panel 10 is heated, and a plurality of perovskite crystals 40 are formed in the region on the panel 10 corresponding to the plurality of electrodes 13 in a manner extending with the thickness direction of the panel 10 as the long side direction, and the radiation absorption layer 4 composed of a plurality of perovskite crystals 40 is formed on one side relative to the panel 10 (third step).

[0075] In this process, a plurality of perovskite crystals 40 are formed on the surface 10a of the panel 10 by repeatedly attaching the mist M to the surface 10a of the panel 10 and volatilizing the solvent from the mist M (i.e., the precipitation of the perovskite material). The mist M is a droplet of micron or submicron size. Droplets of this size are called "droplet particles" and have both liquid and gas properties. Therefore, it is possible to form a film by vapor deposition while maintaining a solvent atmosphere around the surface 10a of the panel 10. As a result, a plurality of perovskite crystals 40 are formed on the surface 10a of the panel 10 in a manner extending in the thickness direction of the panel 10 as the long side direction.

[0076] Furthermore, as long as a predetermined amount of mist M can be attached to the surface 10a of the panel 10, the nozzle 53 may be operated or the nozzle 53 and the stage 54 may not be operated. In addition, the formation area of ​​the radiation absorption layer 4 may be patterned by forming a metal mask or a resist on the surface 10a of the panel 10 in advance.

[0077] Next, the electrode 6 is formed on the surface 4a of the radiation absorbing layer 4. That is, the electrode 6 is formed on one side of the radiation absorbing layer 4 so as to face the plurality of electrodes 13 via a region corresponding to the plurality of electrodes 13 in the region on the panel 10 (fourth step). The electrode 6 can be formed by spray coating, screen printing, spin coating, etc. Alternatively, the electrode 6 can be formed by vapor deposition, sputtering, etc.

[0078] The radiation detector 1 is obtained by the above-described method of manufacturing the radiation detector 1 . The radiation detector 1 including the radiation absorbing layer 4 as described above can be manufactured.

[0079] Furthermore, in the step of generating the mist M from the precursor solution S which is a solution containing the perovskite material, the mist M is generated from the precursor solution S by ultrasonic vibration. Thus, the preferred mist M can be generated easily and reliably.

[0080] In the step of mixing the mist M with the carrier gas G1 , the diluent gas G2 is mixed with the carrier gas G1 . This makes it possible to adjust the concentration of the mist M, which is important for forming a plurality of perovskite crystals 40 extending along the thickness direction of the panel 10 as the longitudinal direction.

[0081] [Modifications]

[0082] The present invention is not limited to the above-mentioned embodiment. For example, the radiation absorbing layer 4 may include non-elongated crystals or voids as a part thereof as long as the radiation absorbing layer 4 includes a plurality of perovskite crystals 40 formed in a manner extending in the direction D1 as the long side direction in the region between the plurality of electrodes 13 and the electrode 6 in the radiation absorbing layer 4. In particular, the radiation absorbing layer 4 may not include a plurality of perovskite crystals 40 formed in a manner extending in the direction D1 as the long side direction in the region other than the region between the plurality of electrodes 13 and the electrode 6 (for example, the outer edge region of the radiation absorbing layer 4 when viewed from the direction D1).

[0083] In addition, the radiation detector 1 may be configured to detect radiation other than X-rays. In addition, a bias voltage may be applied to the electrode 6 so as to generate a positive potential difference with respect to the plurality of electrodes 13 included in the panel 10. In this case, each electrode 13 collects holes generated in the radiation absorption layer 4 due to absorption of X-rays. In addition, in the above-mentioned embodiment, the second electrode portion is composed of one electrode 6 that faces the plurality of electrodes 13 via the radiation absorption layer 4, but the second electrode portion may be composed of a plurality of electrodes 6 that face the plurality of electrodes 13 via the radiation absorption layer 4. In this case, each electrode 6 only needs to face at least one electrode 13 via the radiation absorption layer 4. In addition, in the above-mentioned embodiment, the plurality of electrodes 13 that constitute the first electrode portion have a function as a pixel electrode, but the plurality of electrodes 6 that constitute the second electrode portion may also have a function as a pixel electrode. In this case, the first electrode portion may be composed of at least one electrode 13 that faces the plurality of electrodes 6 via the radiation absorption layer 4. Furthermore, in this case, in the region between the electrode 13 and the plurality of electrodes 6 in the radiation absorbing layer 4, the width of the perovskite crystal 40 in the direction D2 perpendicular to the direction D1 may be less than the arrangement pitch of the plurality of electrodes 6. Thus, it is possible to more reliably suppress the increase in crosstalk between the plurality of pixels P, thereby obtaining a sharper X-ray transmission image. Furthermore, the arrangement pitch of the plurality of electrodes 6 refers to the distance between the centers of the adjacent electrodes 6.

[0084] In addition, as the support substrate 11, not only a glass substrate but also a silicon substrate or the like can be used. In this case, a CMOSASIC can be formed using FETs formed on a silicon substrate instead of thin film transistors. That is, the panel 10 is not limited to the above structure as long as it is a substrate having a plurality of electrodes 13.

[0085] The radiation detector 1 may also include a moisture-proof layer covering the outer surfaces of the panel 10, the radiation absorbing layer 4 and the electrode 6. Such a moisture-proof layer can be obtained by forming a resin film by vapor deposition or the like, or by forming an oxide film or a nitride film by ALD, CVD or the like.

[0086] In addition, in the manufacturing method of the above-mentioned radiation detector 1, mist M is generated from the precursor solution S by ultrasonic vibration, but mist M can also be generated from the precursor solution S by a pressurization method (a method in which a carrier gas G1 to which pressure is applied and the flow rate is increased collides with the precursor solution S to generate mist M), a turntable method (a method in which a precursor solution S is dripped onto a high-speed rotating disk to generate mist M by centrifugal force), an orifice vibration method (a method in which mist M is generated by applying vibration through a piezoelectric element when the precursor solution S passes between orifice plates), an electrostatic method (a method in which a voltage is applied to a capillary that sprays the precursor solution S to generate mist M), etc.

[0087] In addition, various materials and shapes can be applied to each structure of the radiation detector 1, and it is not limited to the above-mentioned examples of materials and shapes. In addition, each structure in the above-mentioned embodiment or modification example can be arbitrarily applied to each structure in other embodiments or modification examples.

[0088] [Examples and Comparative Examples]

[0089] A substrate having a thickness of 0.7 mm made of borosilicate glass was prepared, and a radiation absorbing layer was formed on the surface of the substrate under the conditions of Table 1. In the temperature verification, only the temperature of the substrate was changed to form the radiation absorbing layer on the surface of the substrate. In the flow verification, only the flow rate of the carrier gas was changed to form the radiation absorbing layer on the surface of the substrate.

[0090] [Table 1]

[0091] condition Temperature verification Traffic Verification Precursor (mol) <![CDATA[PbBr2:CsBr=1:1]]> <![CDATA[PbBr2:CsBr=1:1]]> Lead concentration 50mmol / L 50mmol / L Solvent(vol.) DMSO:DMF=1:1 DMSO:DMF=1:1 Ultrasonic generator 2.4MHz 2.4MHz Carrier gas <![CDATA[N2 0.3 L / min]]> <![CDATA[N2 0.25 to 0.5 L / min]]> Dilution gas <![CDATA[N2 5.0 L / min]]> <![CDATA[N2 5.0 L / min]]> Substrate temperature 110～190℃ 160℃ Nozzle temperature 50℃ 50℃ Stage movement 0.16mm / sec 0.16mm / sec

[0092] Figure 4 This is a cross-sectional view (SEM image) of the radiation absorbing layer when the temperature of the substrate is changed. Figure 4 In the figure, (a) is the case where the temperature of the substrate is 110°C, (b) is the case where the temperature of the substrate is 130°C, (c) is the case where the temperature of the substrate is 150°C, (d) is the case where the temperature of the substrate is 160°C, (e) is the case where the temperature of the substrate is 170°C, and (f) is the case where the temperature of the substrate is 190°C. Figure 5 This is a diagram showing the results of X-ray diffraction when the temperature of the substrate is changed.

[0093] like Figure 4 and Figure 5 As shown, it can be seen that in order to reliably form a plurality of perovskite crystals each extending with the thickness direction of the substrate as the long side direction (hereinafter referred to as "a plurality of perovskite crystals in the form of elongated strips"), it is preferred to heat the substrate to a temperature of 110°C to 170°C in the above-mentioned third step. In addition, it can be seen that in order to more reliably form a plurality of perovskite crystals in the form of elongated strips, it is preferred to heat the substrate to a temperature of 130°C to 170°C in the above-mentioned third step.

[0094] Figure 6 This is a cross-sectional view (SEM image) of the radiation absorbing layer when the flow rate of the carrier gas is changed. Figure 6 Among them, (a) is the case where the carrier gas flow rate is 0.25 L / min, (b) is the case where the carrier gas flow rate is 0.30 L / min, (c) is the case where the carrier gas flow rate is 0.35 L / min, (d) is the case where the carrier gas flow rate is 0.40 L / min, (e) is the case where the carrier gas flow rate is 0.45 L / min, and (f) is the case where the carrier gas flow rate is 0.50 L / min. Figure 7 This is a diagram showing the results of X-ray diffraction when the flow rate of the carrier gas is changed.

[0095] like Figure 6 and Figure 7 As shown, it can be seen that in order to reliably form a plurality of long strips of perovskite crystals, it is preferred to supply the carrier gas at a flow rate of 0.25 L / min or more and less than 0.45 L / min in the above-mentioned second step. In addition, it can be seen that in order to more reliably form a plurality of long strips of perovskite crystals, it is preferred to supply the carrier gas at a flow rate of 0.30 L / min or more and less than 0.45 L / min in the above-mentioned second step.

[0096] Here, the case of using dimethyl sulfoxide (DMSO) and N,N-dimethylformamide (DMF) as a solvent for generating a solution (precursor solution) containing a perovskite material was studied.

[0097] The viscosity of DMSO (1.99 cP at 25°C) is higher than the viscosity of DMF (0.79 cP at 25°C). Therefore, if the precursor solution is generated with a single solvent of DMSO, the amount of mist generated cannot be sufficiently obtained by ultrasonic vibration with a vibration frequency of 2.4 MHz. Therefore, in order to obtain a sufficient amount of mist generated, it is preferred to mix DMF as a solvent in DMSO.

[0098] On the other hand, regarding the saturated solubility of perovskite materials (PbX2 (X = Cl, Br, I) and CsY (Y = Cl, Br, I), the saturated solubility of DMF is lower than the saturated solubility of DMSO. Therefore, if the mixing ratio of DMF to DMSO is excessively increased when generating the precursor solution, the amount of condensation of mist in the flow path increases, and there is a concern that it will have an adverse effect on the formation of multiple perovskite crystals in the form of long strips.

[0099] According to the above, in order to reliably form a plurality of perovskite crystals in the form of long strips, it is preferred that in the first step, a solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF in a volume ratio of DMSO:DMF=1:0 or more and 10 or less. In addition, in order to more reliably form a plurality of perovskite crystals in the form of long strips, it is preferred that in the first step, a solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF in a volume ratio of DMSO:DMF=1:0 or more and 5 or less. Furthermore, as long as the solvent contains DMSO and DMF in the above-mentioned volume ratio, other solvents other than DMSO and DMF may also be included.

[0100] In addition, when the precursor solution is generated with a single solvent of DMSO, if the frequency of ultrasonic vibration is reduced, the amount of mist generated can be increased, but the particle size of the mist will become larger, which will damage the fluidity of the mist. On the other hand, when the precursor solution is generated with a single solvent of DMSO, if the frequency of ultrasonic vibration is increased, the amount of mist generated cannot be fully obtained as described above. However, if the mixing ratio of DMF to DMSO is excessively increased when the precursor solution is generated, the amount of mist condensed in the flow path becomes more as described above. Therefore, the frequency of ultrasonic vibration is preferably above 100kHz and below 10MHz, and more preferably above 1MHz and below 5MHz.

[0101] Each of the above numerical ranges is an example of a preferred numerical range or a more preferred numerical range. Even if the temperature of the substrate is increased, a plurality of perovskite crystals in the form of long strips can be formed by increasing the flow rate of the carrier gas or increasing the concentration of the perovskite material in the solution to increase the supply of the perovskite material to the substrate. For example, even if the substrate is heated to a temperature of the boiling point of the solvent + 20°C, as long as the supply of the perovskite material to the substrate is increased, a plurality of perovskite crystals in the form of long strips can be formed. In order to reliably form a plurality of perovskite crystals in the form of long strips, it is preferred to heat the substrate with a temperature of the boiling point of the solvent + 20°C as the upper limit in the above-mentioned third step. Furthermore, in a solvent mixed with a plurality of solvents, the boiling point of the solvent refers to the boiling point of the solvent with the highest boiling point. For example, in a solvent mixed with DMSO and DMF, the boiling point of DMSO is 189°C and the boiling point of DMF is 153°C, therefore, it is preferred to heat the substrate with 209°C (189°C + 20°C) as the upper limit.

[0102] As an example and a comparative example, a substrate having a thickness of 0.7 mm and made of borosilicate glass was prepared, and a radiation absorbing layer was formed on the surface of the substrate under the conditions of Table 2 below.

[0103] [Table 2]

[0104]

[0105]

[0106] As a result, in Example 1, Figure 8 As shown in (a) and (b), a plurality of perovskite crystals in the form of long strips are formed. Example 1 satisfies the more preferred conditions related to the substrate temperature (130°C or more and 170°C or less) and the more preferred conditions related to the carrier gas flow rate (0.30L / min or more and less than 0.45L / min). Furthermore, in Figure 8 In (a) and (b), the left side is a plan view (SEM image) of the radiation absorbing layer, and the right side is a cross-sectional view (SEM image) of the radiation absorbing layer.

[0107] In Comparative Example 1, Fig. 9 As shown in (a), multiple perovskite crystals in the form of long strips are not formed. It is speculated that the density of the mist in Comparative Example 1 is increased and the drying speed of the mist is accelerated compared with Example 1. Comparative Example 1 does not meet the preferred conditions related to the substrate temperature (above 110°C and below 170°C) and the preferred conditions related to the carrier gas flow rate (above 0.25L / min and below 0.45L / min). Furthermore, in Fig. 9 In (a), the left side is a top view (SEM image) of the radiation absorbing layer, and the right side is a cross-sectional view (SEM image) of the radiation absorbing layer.

[0108] In Comparative Example 2, Fig. 9 As shown in (b), multiple perovskite crystals in the form of long strips are not formed. Compared with Example 1, the concentration of the precursor in the mist, the density of the mist, and the moving speed of the carrier are greater in Comparative Example 2. Comparative Example 2 meets the more preferred conditions related to the above-mentioned substrate temperature (above 130°C and below 170°C), but does not meet the preferred conditions related to the above-mentioned carrier gas flow rate (above 0.25L / min and below 0.45L / min). Furthermore, in Fig. 9 In (b), the left side is a top view (SEM image) of the radiation absorbing layer, and the right side is a cross-sectional view (SEM image) of the radiation absorbing layer.

[0109] In Comparative Example 3, Fig. 9 As shown in (c), multiple perovskite crystals in the form of long strips are not formed. Compared with Example 1, the concentration of the precursor in the mist, the density of the mist, and the moving speed of the carrier are greater in Comparative Example 3. Comparative Example 3 does not meet the preferred conditions related to the substrate temperature (above 110°C and below 170°C) and the preferred conditions related to the carrier gas flow rate (above 0.25L / min and below 0.45L / min). Furthermore, in Fig. 9 In (c), the left side is a top view (SEM image) of the radiation absorbing layer, and the right side is a cross-sectional view (SEM image) of the radiation absorbing layer.

[0110] In Examples 2 and 3, respectively Fig.10 As shown in (a) and (b), a plurality of perovskite crystals in the shape of long strips are formed. When the flow rate of the carrier gas is increased, the amount of mist delivered increases. Therefore, in Example 3, the flow rate of the dilution gas is increased (i.e., the density of the mist is reduced) compared to Example 2 to achieve a balance. Example 2 does not satisfy the preferred conditions related to the above-mentioned substrate temperature (above 110°C and below 170°C), but satisfies the more preferred conditions related to the above-mentioned carrier gas flow rate (above 0.30L / min and less than 0.45L / min). Example 3 does not satisfy the preferred conditions related to the above-mentioned substrate temperature (above 110°C and below 170°C) and the preferred conditions related to the carrier gas flow rate (above 0.25L / min and less than 0.45L / min). A plurality of perovskite crystals in the shape of long strips can be formed. Furthermore, in Fig.10 In (a), the left side is a top view (SEM image) of the radiation absorbing layer, and the right side is a cross-sectional view (SEM image) of the radiation absorbing layer. Fig.10 (b) shows only a cross-sectional view (SEM image) of the radiation absorbing layer.

[0111] Furthermore, as the substrate, a substrate made of glass other than borosilicate glass, ITO, Pt, or the like, a semiconductor substrate made of Si or the like, an integrated circuit, or the like can also be used.

[0112] Here, a mechanism in which a plurality of elongated perovskite crystals 40 are not formed and a mechanism in which a plurality of elongated perovskite crystals 40 are formed are respectively speculated and described.

[0113] In the case where a plurality of perovskite crystals 40 are not formed in a long strip shape, Fig.11 When the mist M shown in (a) is attached to the surface of the substrate 100, Fig.11 Before the mist M shrinks to the inside as shown in (b), a large amount of solvent 101 evaporates from the outside of the mist M, so the central part of the mist M becomes thinner. Fig.11 As shown in (c), the perovskite material 102 is precipitated in a ring shape (the so-called coffee ring phenomenon). Thus, it can be imagined that under the condition that the perovskite material 102 is precipitated in a ring shape, even if the mist M is repeatedly attached thereto and the solvent 101 is volatilized from the mist M (i.e., the perovskite material 102 is precipitated), it is difficult to deposit a plurality of perovskite crystals 40 in a long strip shape.

[0114] On the other hand, in the case of forming a plurality of perovskite crystals 40 in a long strip shape, when Fig.12 When the mist M shown in (a) is attached to the surface of the substrate 100, as shown in Fig.12 As shown in (b), the mist M shrinks inward while the solvent 101 evaporates from the mist M, so that the central part of the mist M does not become thinner. Fig.12 As shown in (c), the perovskite material 102 is precipitated in a circular shape. In this way, it can be imagined that under the condition that the perovskite material 102 is precipitated in a circular shape, by repeatedly attaching the mist M thereto and volatilizing the solvent 101 from the mist M (i.e., the precipitation of the perovskite material 102), it is easy to deposit a plurality of perovskite crystals 40 in the form of long strips.

[0115] Explanation of symbols

[0116] 1…radiation detector, 4…radiation absorption layer, 6…electrode (second electrode, second electrode portion), 10…panel (substrate), 13…electrode (first electrode, first electrode portion), 40…perovskite crystal, D1…direction (first direction), D2…direction (second direction), G1…carrier gas, G2…dilution gas, M…mist, S…precursor solution (solution).

Claims

1. A radiation detector, wherein: have: A substrate having a first electrode portion; a radiation absorbing layer disposed on one side relative to the substrate and composed of a plurality of perovskite crystals; and a second electrode portion disposed on the one side relative to the radiation absorbing layer and facing the first electrode portion via the radiation absorbing layer, In the region between the first electrode portion and the second electrode portion in the radiation absorbing layer, the plurality of perovskite crystals are formed so as to extend in a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a long side direction. At least one of the first electrode unit and the second electrode unit is composed of a plurality of electrodes. In the region between the first electrode portion and the second electrode portion, a width of the perovskite crystal in a second direction perpendicular to the first direction is equal to or smaller than an arrangement pitch of the plurality of electrodes.

2. The radiation detector according to claim 1, wherein: In the region between the first electrode portion and the second electrode portion, a length of the perovskite crystal in the first direction is at least twice a width of the perovskite crystal in the second direction.

3. The radiation detector according to claim 1, wherein: In the region between the first electrode portion and the second electrode portion, a length of the perovskite crystal in the first direction is greater than or equal to 10 μm.

4. The radiation detector according to claim 2, wherein: In the region between the first electrode portion and the second electrode portion, a length of the perovskite crystal in the first direction is greater than or equal to 10 μm.

5. The radiation detector according to claim 1, wherein: In the region between the first electrode portion and the second electrode portion, an existence rate of the perovskite crystals is 80% or more.

6. The radiation detector according to claim 2, wherein: In the region between the first electrode portion and the second electrode portion, an existence rate of the perovskite crystals is 80% or more.

7. The radiation detector according to claim 3, wherein: In the region between the first electrode portion and the second electrode portion, an existence rate of the perovskite crystals is 80% or more.

8. The radiation detector according to claim 4, wherein: In the region between the first electrode portion and the second electrode portion, an existence rate of the perovskite crystals is 80% or more.

9. The radiation detector according to any one of claims 1 to 8, wherein: In the region between the first electrode portion and the second electrode portion, the perovskite crystal is in contact with at least one other perovskite crystal.

10. The radiation detector according to any one of claims 1 to 8, wherein: In the region between the first electrode portion and the second electrode portion, a length of the perovskite crystal in the first direction is smaller than a thickness of the radiation absorbing layer in the first direction.

11. The radiation detector according to claim 9, wherein: In the region between the first electrode portion and the second electrode portion, a length of the perovskite crystal in the first direction is smaller than a thickness of the radiation absorbing layer in the first direction.

12. The radiation detector according to any one of claims 1 to 8, wherein: In the region between the first electrode portion and the second electrode portion, a thickness of the radiation absorbing layer in the first direction is 100 μm or more.

13. The radiation detector according to claim 9, wherein: In the region between the first electrode portion and the second electrode portion, a thickness of the radiation absorbing layer in the first direction is 100 μm or more.

14. The radiation detector according to claim 10, wherein: In the region between the first electrode portion and the second electrode portion, a thickness of the radiation absorbing layer in the first direction is 100 μm or more.

15. The radiation detector according to claim 11, wherein: In the region between the first electrode portion and the second electrode portion, a thickness of the radiation absorbing layer in the first direction is 100 μm or more.

16. A method for manufacturing a radiation detector, in, include: A first step of generating mist from a solution containing a perovskite material; A second step of mixing the mist with a carrier gas; A third step of blowing the carrier gas containing the mist onto a substrate having a first electrode portion while the substrate is heated, thereby forming a plurality of perovskite crystals in a region on the substrate corresponding to the first electrode portion so as to extend along the thickness direction of the substrate as a long side direction, and forming a radiation absorbing layer containing the plurality of perovskite crystals on one side relative to the substrate; and a fourth step of forming a second electrode portion on the one side of the radiation absorbing layer so as to face the first electrode portion via the region corresponding to the first electrode portion, At least one of the first electrode unit and the second electrode unit is composed of a plurality of electrodes. In the third step, the radiation absorbing layer is formed so that the width of the perovskite crystal in a second direction perpendicular to the first direction in a region between the first electrode portion and the second electrode portion is equal to or smaller than an arrangement pitch of the plurality of electrodes.

17. The method for manufacturing a radiation detector according to claim 16, wherein: In the first step, the mist is generated from the solution by ultrasonic vibration.

18. The method for manufacturing a radiation detector according to claim 16, wherein: In the second step, a diluent gas is mixed with the carrier gas.

19. The method for manufacturing a radiation detector according to claim 17, wherein: In the second step, a diluent gas is mixed with the carrier gas.

20. The method for manufacturing a radiation detector according to claim 16, wherein: In the third step, the substrate is heated to a temperature of 110° C. or higher and 170° C. or lower.

21. The method for manufacturing a radiation detector according to claim 17, wherein: In the third step, the substrate is heated to a temperature of 110° C. or higher and 170° C. or lower.

22. The method for manufacturing a radiation detector according to claim 18, wherein: In the third step, the substrate is heated to a temperature of 110° C. or higher and 170° C. or lower.

23. The method for manufacturing a radiation detector according to claim 19, wherein: In the third step, the substrate is heated to a temperature of 110° C. or higher and 170° C. or lower.

24. The method for manufacturing a radiation detector according to claim 20, wherein: In the third step, the substrate is heated to a temperature of 130° C. or higher and 170° C. or lower.

25. The method for manufacturing a radiation detector according to claim 21, wherein: In the third step, the substrate is heated to a temperature of 130° C. or higher and 170° C. or lower.

26. The method for manufacturing a radiation detector according to claim 22, wherein: In the third step, the substrate is heated to a temperature of 130° C. or higher and 170° C. or lower.

27. The method for manufacturing a radiation detector according to claim 23, wherein: In the third step, the substrate is heated to a temperature of 130° C. or higher and 170° C. or lower.

28. The method for manufacturing a radiation detector according to any one of claims 16 to 27, wherein: In the second step, the carrier gas is supplied at a flow rate of 0.25 L / min or more and less than 0.45 L / min.

29. The method for manufacturing a radiation detector according to claim 28, wherein: In the second step, the carrier gas is supplied at a flow rate of 0.30 L / min or more and less than 0.45 L / min.

30. The method for manufacturing a radiation detector according to any one of claims 16 to 27, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than 10".

31. The method for manufacturing a radiation detector according to claim 28, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than 10".

32. The method for manufacturing a radiation detector according to claim 29, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than 10".

33. The method for manufacturing a radiation detector according to claim 30, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than or equal to 5".

34. The method for manufacturing a radiation detector according to claim 31, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than or equal to 5".

35. The method for manufacturing a radiation detector according to claim 32, wherein: In the first step, the solution containing the perovskite material is generated by dissolving the perovskite material in a solvent containing DMSO and DMF at a volume ratio of DMSO:DMF=1:"a value less than or equal to 5".

36. The method for manufacturing a radiation detector according to any one of claims 16 to 27, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

37. The method for manufacturing a radiation detector according to claim 28, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

38. The method for manufacturing a radiation detector according to claim 29, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

39. The method for manufacturing a radiation detector according to claim 30, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

40. The method for manufacturing a radiation detector according to claim 31, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

41. The method for manufacturing a radiation detector according to claim 32, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

42. The method for manufacturing a radiation detector according to claim 33, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

43. The method for manufacturing a radiation detector according to claim 34, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

44. The method for manufacturing a radiation detector according to claim 35, wherein: In the third step, the substrate is heated at a temperature of the boiling point of the solvent of the solution + 20° C. as an upper limit.

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