Optoelectronic device and method for manufacturing the same

Abstract

An optoelectronic device comprises: at least one optoelectronic semiconductor component (11); a carrier (15), on the upper side (13) of which the semiconductor component (11) is arranged; and at least one light channel (17) associated with the optoelectronic semiconductor component (11), the light channel extending between a first end (21) of the light channel (17) and a second end (27) of the light channel (17), the first end being remote from a photoactive surface (23) of the semiconductor component (11) and having an opening (25) into the exterior space, and the second end A semiconductor component (11) having an opening (29) oriented on a photoactive surface (23) of the semiconductor component (11), wherein the light channel (17) has a cavity (31) extending between two ends (21, 27), wherein an inner wall (33) surrounds the cavity (31), wherein at least one light channel (17) extends non-linearly between its respective first and second ends (21, 27) and preferably along a curved extension direction, and wherein at least a subregion of the inner wall (33) or the entire inner wall (33) is designed to be reflective.

Description

[0001] This application claims the priority of German patent application DE 10 2018 131 024.2, the disclosure content of which is hereby incorporated by reference. Technical Field

[0002] The invention relates to an optoelectronic device and a method for producing an optoelectronic device. Background Art

[0003] The prior art discloses optoelectronic devices in which optoelectronic semiconductor components are arranged on the upper side of a carrier. The optoelectronic semiconductor components can be light detectors or light emitters. For certain applications, it may be desirable or necessary that the optoelectronic device provides a certain directional characteristic for the light to be detected, provided that the optoelectronic semiconductor component is a light detector. In a corresponding manner, it may be desirable or necessary that the optoelectronic device provides a certain directional characteristic for the light to be emitted, provided that the optoelectronic device is a light emitter. Summary of the invention

[0004] The object of the present invention is to provide an improved optoelectronic device which has a sensitivity with regard to detecting light from different spatial angular ranges or which allows the emission of light in a directed manner in a spatial angular range.

[0005] The optoelectronic device according to the invention comprises: at least one optoelectronic semiconductor component; a carrier, on the upper side of which the semiconductor component is arranged; and at least one light channel associated with the optoelectronic semiconductor component, the light channel extending between a first end of the light channel and a second end of the light channel, the first end being remote from a photoactive surface of the semiconductor component and the first end having an opening into the external space, wherein the second end of the light channel has an opening oriented onto the photoactive surface of the semiconductor component, wherein the light channel has a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a subregion of the inner wall or the entire inner wall is constructed to be reflective.

[0006] Thus, in an optoelectronic device, light can enter the light channel from the outside via an opening at a first end of the light channel. The light can be guided along the extension direction of the light channel and onto the photoactive surface of the semiconductor component, in particular by one or more reflections, via the reflective inner wall or via a reflective sub-region of the inner wall. If the semiconductor component is a photodetector, the light can be detected by the semiconductor component. In this case, due to the reflective inner wall, a Lambertian reception characteristic can be achieved at least approximately.

[0007] If the semiconductor component is a light emitter, the light emitted via the optically active surface of the semiconductor component can reach the opening at the second end of the light channel and reach the cavity of the light channel, in particular by being deflected to the first end of the light channel by one or more reflections at the inner wall of the cavity. At the opening at the first end of the light channel, the light can reach the outside space.

[0008] The direction in which the opening at the first end of the light channel points to the external space essentially determines the direction or radiation characteristics of the optoelectronic device. If the semiconductor component is a light source, the radiation emitted from the opening is at least mainly radiated into the external space in the direction of the opening. If the semiconductor component is a light detector, the light that is emitted to the first end of the light channel in the opposite direction of the opening will at least essentially reach the photoactive surface of the semiconductor component by means of the cavity of the light channel. Therefore, the radiation characteristics or light characteristics of the optoelectronic device have a correlation with the orientation of the opening of the light channel to the external space. For example, if the optoelectronic device, such as an optoelectronic device in the interior space of a motor vehicle, is required to be used as a directional light source, or if the optoelectronic device is required to be used for light detection, such as as a sun height sensor, this can, for example, help to achieve direction-dependent light detection.

[0009] In an optoelectronic device, it can be provided that at least one subregion of the inner wall or the entire inner wall has a reflective or light-reflecting coating. As a result, a high reflectivity can be achieved in a simple manner at least in this inner subregion.

[0010] The cavity can be filled with a light-transmissive material, such as silicone or epoxy.

[0011] In this context, light can be used to denote any electromagnetic radiation emitted or detected by the semiconductor component, depending on whether the semiconductor component is designed as an emitter or a detector. In particular, the term light can include not only visible light but also ultraviolet light and / or infrared light.

[0012] The optoelectronic device can have at least two optical semiconductor components on the upper side of the carrier, wherein a corresponding, separate light channel is associated with each semiconductor component, the opening of the light channel at the second end is oriented to the photoactive surface of the corresponding semiconductor component, and the opening of the light channel at the first end is oriented to the external space. Thus, two or more optoelectronic semiconductor components can be provided on the upper side of the carrier. In this case, each semiconductor component is associated with its own light channel. Each light channel has a cavity extending between its first end and its second end, which cavity can optionally be filled with a light-transmitting material. In this case, the inner wall surrounds the corresponding cavity, and at least one sub-region of the inner wall is constructed to be reflective, for example by means of a reflective or light-reflecting coating.

[0013] In this case, the optoelectronic semiconductor component can be, for example, a light detector. Each optical channel can guide light from the outside to the photoactive surface of the associated semiconductor component in order to detect the light. The intensity of the detected radiation also depends on the direction in which the opening of the corresponding channel is oriented into the outside. If the openings of the optical channels of at least two optoelectronic semiconductor components point in different directions, the direction of incidence of the detected radiation can therefore be inferred. Therefore, the optoelectronic device is suitable for use as a sun height sensor, for example in the interior of a motor vehicle.

[0014] In this case, when using exactly two photodetectors as optoelectronic semiconductor components, it is particularly possible to distinguish in which half of the vehicle interior the sun is located or from which half the sun enters the vehicle interior. The sun's altitude and thus the position of the sun relative to the optoelectronic device can also be determined in a relatively simple manner via at least one further third photodetector.

[0015] The optoelectronic semiconductor component can also be a light emitter, ie, for example, an LED. A hybrid arrangement comprising a light detector and a light emitter is also possible, wherein each light detector and light emitter is associated with a separate light channel.

[0016] In the case of a photovoltaic device, it can be provided that the opening of the light channel into the outside world points in different directions. This is advantageous, for example, when the photovoltaic device is used as a sun sensor or as a sun altitude sensor. When the photovoltaic device is used as a light source, the light beam can be emitted in different directions depending on the direction of the opening into the outside world.

[0017] According to one design of the present invention, at least one optical channel extends non-linearly between its respective first and second ends. Therefore, it is possible to orient the optically active surface of the semiconductor component in a direction different from the opening of the associated optical channel to the external space. If at least one optoelectronic semiconductor component is a light emitter, the direction of light emission is therefore basically determined by the direction of the opening to the external space. If the optoelectronic semiconductor component is a photodetector, the directional dependency of the detection of the incident light can be determined in a corresponding manner by the direction of the opening to the external space. The direction in which the optically active surface of the semiconductor component points is therefore secondary, because in the case of the photodetector, the optical channel deflects the light incident from the outside onto the optically active surface, or in the case of the light emitter, the optical channel deflects the light emitted from the optically active surface into the external space. Therefore, by using the optical channel associated with the semiconductor component, the semiconductor component can be arranged in a relatively simple manner in the optoelectronic device, that is, arranged on the upper side of the carrier, wherein the carrier can be, for example, a conductor frame. Due to the use of the associated optical channel, two or more semiconductor components can also be arranged on a single carrier.

[0018] The carrier can be designed in particular to be flat and have a flat top side and / or a flat bottom side. The flat top side can in particular ensure that all semiconductor components can be arranged in one plane. The flat bottom side of the carrier can ensure that the carrier and thus the optoelectronic device is placed on a flat surface of another device and can be fixed if necessary. The optoelectronic device can therefore be designed as an SMT component, i.e. a surface-mounted component. SMT here stands for surface mounting technology.

[0019] The opening of at least one light channel pointing into the outside world can have a cross section that does not extend parallel to the photoactive surface of the associated semiconductor component. This can be achieved in particular by a non-linear course of the light channel. Thus, the emission or reception characteristics of the optoelectronic device are determined by the direction of the opening of the light channel into the outside world and not by the direction in which the photoactive surface of the associated semiconductor component points.

[0020] The plane extending through the cross section of the opening into the exterior space can extend to a plane located in the optically active surface of the associated semiconductor component at an angle between 30° and 60°, preferably between 40° and 50°. Other angles in the range between 0° and 90° are also possible.

[0021] The cavity of at least one and preferably each light channel can have a cross section that is dimensioned at least substantially in accordance with the dimensions of the photoactive surface of the associated semiconductor component. Thus, each cross section extending perpendicularly to the possibly curved extension direction of the cavity can have at least substantially the same length and width. In this case, the length and width can correspond to the length and width of the photoactive surface.

[0022] In the case of a non-linear extension of the light channel, the different cross sections may not be parallel to one another. Here, the dimensioning of the cross section of the cavity may remain constant along the preferably curved extension direction of the associated light channel.

[0023] At least one semiconductor component can be fixed, in particular adhesively bonded, to the surface of the carrier, thereby making it possible to simply and quickly assemble the semiconductor component on the optoelectronic device.

[0024] At least one light channel and preferably each light channel can be formed in a particularly solid housing block. One or more light channels can be realized particularly easily in the housing block. In addition, the housing block can be manufactured compactly and with small external dimensions.

[0025] The housing block can have a flat bottom side so that the housing block can be applied to the top side of the carrier. In addition, the housing block can be fixed to the top side of the carrier, for example by means of gluing. The housing block can be placed on the carrier in such a way that the carrier closes the housing block at the bottom. Thus, the housing block and the carrier can form the entire housing of the optoelectronic device. Both the housing block and the carrier can be designed compactly and with small dimensions. Thus, an overall compact optoelectronic device can be realized. For example, a compact component size with an area of, for example, 3×5 mm can be realized for the bottom side of the carrier, and a height of 3 mm can be realized for the thickness of the carrier and the housing block located on the carrier. The optoelectronic device can be embedded in an instrument panel in the interior of a motor vehicle, for example as a sun sensor or sun position sensor.

[0026] The invention further relates to a method for producing an optoelectronic device, in particular an optoelectronic device according to the invention, wherein

[0027] providing a carrier for at least one optoelectronic semiconductor component,

[0028] At least one optoelectronic semiconductor component is arranged on the upper side of the carrier, and

[0029] At least one light channel associated with an optoelectronic semiconductor component is arranged on a carrier, wherein the light channel is constructed so that the light channel extends between a first end of the light channel and a second end of the light channel, the first end being remote from a photoactive surface of the semiconductor component and having an opening into the exterior space, wherein the second end of the light channel has an opening oriented onto the photoactive surface of the semiconductor component, and wherein the light channel has a cavity extending between the two ends, the cavity can optionally be filled with a light-transmitting material, and wherein an inner wall surrounds the cavity, and wherein at least a subregion of the inner wall or the entire inner wall is constructed to be reflective.

[0030] The invention also relates to a motor vehicle having at least one interior space element, in particular an instrument panel, wherein at least one device according to the invention is integrated into the interior space element, in particular beneath a cover which is at least partially transparent for light to be received or emitted. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention will be described in more detail below with reference to the accompanying drawings according to the embodiments.

[0032] Figure 1 A perspective view showing a variant of the optoelectronic device according to the invention,

[0033] Figure 2 Show Figure 1 A perspective view of a carrier of the device,

[0034] Figure 3 Show Figure 1 A top view of the housing block of the device,

[0035] Figure 4 Show Figure 1 The receiving characteristics of the device,

[0036] Figure 5 Show Figure 1 other reception characteristics of the device, and

[0037] Figure 6 A perspective view showing a light channel of an optoelectronic device according to the invention. DETAILED DESCRIPTION

[0038] The photovoltaic device according to the present invention Figure 1 and Figure 2 The variant shown in FIG. 1 comprises two optoelectronic semiconductor components 11 which are arranged spaced apart from one another on the upper side 13 of a carrier 15. Each semiconductor component 11 is associated with its own light channel 17. In the variant shown, the light channel 17 is formed in a solid housing block 19, such as Figure 1 shown.

[0039] Figure 6 The light channel 17 is described by way of example. The light channel 17 has a first end 21, which is remote from the photoactive surface 23 of the associated semiconductor component 11 and has an opening 25 in the external space. The light channel 17 also has a second end 27, which has an opening 29 oriented to the photoactive surface 23 of the semiconductor component 11. A cavity 31 extends between the two ends 21, 27 of the light channel 17, which cavity can optionally be filled with a light-transmitting material. An inner wall 33 surrounds the cavity 31, and at least a sub-region of the inner wall or the entire region of the inner wall 33 is designed to be reflective.

[0040] In the variant shown, the optoelectronic semiconductor components 11 are light detectors, for example in the form of corresponding photodiodes. In this case, each semiconductor component 11 can have an available optical sensitivity in a predefined spectral range for detecting light in the spectral range.

[0041] The inner wall 33 of the cavity 31 can be designed to be reflective so that it has a reflectivity of at least 75% or at least 80% or at least 85% or at least 90% or at least 95% for light from the spectral range. Here, the percentage is the proportion of reflected radiation with respect to the incident radiation at a specific angle of incidence, which can be, for example, 90°.

[0042] Such a high reflectivity can be achieved in particular by virtue of at least the reflective subregion of the inner wall 33 having a reflective or light-reflecting coating, for example consisting of gold or silver (not shown).

[0043] As explained below, according to Figure 1 and 2 The photovoltaic device is particularly suitable for use as a zone 2 sun altitude sensor. Figure 1 and 2 In the device, the two openings 25 point to the external space in different directions. Here, the direction of the corresponding normal line on the cross section extending through the corresponding opening 25 is regarded as the opening direction. Figure 3 As explained above, the angle between the opening directions of the two openings 25 of the light channel 17 is at least approximately 100°. The angle value relates in particular to the horizontal angle between the opening directions and thus between the fields of view of the detector 11 associated with the light channel 17. In other words, the horizontal angle lies in the XY plane, which extends parallel to the flat upper side 13 of the carrier 15. The vertical reception angle can be at least approximately 60°. Thus, the opening direction can be tilted by approximately 60° with respect to the Z axis (compare Figure 1 in the coordinate system).

[0044] Figure 4 Show Figure 1 1 shows a diagram of the correlation of the measurement signals of two semiconductor components 11 of a device, each designed as a photodiode, with a change in the angle of incidence of the detected radiation. An angle from -180° to +180° is plotted along the abscissa, which indicates the position of a light source pointing to the device relative to a reference point in the device. The reference point is the geometric center point of the device. The ordinate indicates the intensity of the detected light.

[0045] Figure 5 The dependence of the measurement signals K3, K4 on a single photodiode 11 of the device and on the combined signal 5 of two photodiodes 11 is shown for a change in the angle of incidence of the detected radiation. An angle from -135° to +135° is plotted along the abscissa, which indicates the position of the light source directed toward the device with respect to a reference point. The ordinate indicates the intensity of the detected light. The measurement signals K3, K4 and K5 relate to the movement of the light source along the y-axis (see Figure 3 ).

[0046] Curves K3 and K4 relate to the signals recorded by each photodiode 11, while curve K5 shows the combined signal of the two photodiodes 11. The combined signal corresponding to curve K5 corresponds to the measurement signal K1 in the angular range of approximately -45° and +45°.

[0047] According to Figure 4 and 5 The diagram shown in FIG. 1 can determine Figure 1 and 2 The receiving characteristics of the device. Figure 1 and Figure 2When the device is used as a sun altitude sensor, the receiving characteristic allows determining the direction or at least one half-space from which light is incident on the device.

[0048] If a light emitter (such as an LED) is used instead of a photodiode as Figure 1 If semiconductor components 11 are used in a device of the type described above, a device is obtained with an emission characteristic that is inclined relative to the horizontal and relative to the vertical. When using LEDs with different colors, different colors can be seen at different angles. It is also possible to provide more than two semiconductor components 11, each with an associated light channel 17. If, for example, four light channels 11, each rotated 90°, with associated light emitters or light detectors are used, the entire spatial range can be covered (for example in the horizontal). It is also possible to realize a hybrid device with light emitters and light detectors, each with an associated light channel.

[0049] Reference numerals list

[0050] 11Semiconductor components, photodiodes, LEDs

[0051] 13 upper side

[0052] 15 Carrier

[0053] 17 Optical Channel

[0054] 19 Housing block

[0055] 21 First end

[0056] 23 Photoactive Surfaces

[0057] 25 mouths

[0058] 27 Second end

[0059] 29 mouths

[0060] 31 Cavity

[0061] 33 Inner wall

[0062] K1 measurement curve

[0063] K2 measurement curve

[0064] K3 measurement curve

[0065] K4 measurement curve

[0066] K5 measurement curve.

Claims

1. An optoelectronic device having: at least one optoelectronic semiconductor component (11); a carrier (15), on the upper side (13) of which the optoelectronic semiconductor component (11) is arranged; a solid housing block (19) having a flat underside, the housing block (19) being arranged on the upper side (13) of the carrier (15); and at least one light channel (17) associated with the optoelectronic semiconductor component (11), the light channel (17) extending between a first end (21) of the light channel (17) and a second end (27) of the light channel (17), the first end (21) being remote from a photoactive surface (23) of the optoelectronic semiconductor component (11) and having an opening into the exterior, the second end (27) having an opening oriented onto the photoactive surface (23) of the optoelectronic semiconductor component (11), in, At least one of the light channels (17) extends non-linearly between the first end (21) and the second end (27) of the light channel (17), The light channel (17) has a cavity (31) extending between the first end (21) and the second end (27). wherein an inner wall (33) surrounds the cavity (31), and wherein at least a subregion of the inner wall (33) or the entire inner wall (33) is designed to be reflective, and wherein the top side (13) of the carrier (15) is designed to be planar and / or the carrier (15) has a planar bottom side, so that the optoelectronic device can be surface-mounted in the case of a planar bottom side, and Therein, at least one of the light channels (17) is formed in the solid housing block (19).

2. The optoelectronic device according to claim 1, characterized in that At least one of the light channels (17) extends along a curved direction of extension between the first end (21) and the second end (27) of the light channel (17), respectively.

3. The optoelectronic device according to claim 1 or 2, characterized in that: At least one subregion of the inner wall (33) or the entire inner wall (33) has a reflective or light-reflecting coating.

4. The optoelectronic device according to claim 1 or 2, characterized in that: At least two optoelectronic semiconductor components (11) are arranged on the upper side (13) of the carrier (15), wherein each optoelectronic semiconductor component (11) is associated with a respective separate light channel (17), the opening of the light channel (17) at the second end (27) being oriented toward the photoactive surface (23) of the optoelectronic semiconductor component (11), and the opening of the light channel (17) at the first end (21) being oriented toward the exterior space.

5. The optoelectronic device according to claim 4, characterized in that The openings of the light channel (17) pointing to the external space point in different directions.

6. The optoelectronic device according to claim 1 or 2, characterized in that: The opening of at least one of the light channels (17) pointing into the exterior has a cross section which does not extend parallel to the photoactive surface (23) of the associated optoelectronic semiconductor component (11).

7. The optoelectronic device according to claim 1 or 2, characterized in that: A plane extending through the cross section extends at an angle of between 30° and 80° relative to a plane extending through the photoactive surface (23) of the associated optoelectronic semiconductor component (11).

8. The optoelectronic device according to claim 7, characterized in that A plane extending through the cross section extends at an angle of between 40° and 70° relative to a plane extending through the photoactive surface (23) of the associated optoelectronic semiconductor component (11).

9. The optoelectronic device according to claim 8, characterized in that A plane extending through the cross section extends at an angle of between 55° and 65° relative to a plane extending through the photoactive surface (23) of the associated optoelectronic semiconductor component (11).

10. The optoelectronic device according to claim 1 or 2, characterized in that: The cavity (31) of at least one of the light channels (17) is filled with a light-transmitting material and / or has a cross section whose dimensions are determined according to the dimensions of the photoactive surface (23) of the associated optoelectronic semiconductor component (11).

11. The optoelectronic device according to claim 10, characterized in that The cavity (31) of each light channel (17) is filled with light-transmitting material.

12. The optoelectronic device according to claim 10, characterized in that The light-transmitting material is silicone resin or epoxy resin.

13. The optoelectronic device according to claim 1 or 2, characterized in that: The cross section of the cavity (31) of at least one of the light channels (17) remains the same along the extension direction of the light channel (17).

14. The optoelectronic device according to claim 13, characterized in that The cross section of the cavity (31) of each light channel (17) remains the same along the extension direction of the light channel (17).

15. The optoelectronic device according to claim 1 or 2, characterized in that: At least one of the optoelectronic semiconductor components (11) is fixed to the top side (13) of the carrier (15).

16. The optoelectronic device according to claim 15, characterized in that At least one of the optoelectronic semiconductor components (11) is adhesively bonded onto the top side (13) of the carrier (15).

17. The optoelectronic device according to claim 1, characterized in that The housing block (19) is fixed on the carrier (15).

18. The optoelectronic device according to claim 17, characterized in that The housing block (19) is adhesively bonded to the carrier (15).

19. The optoelectronic device according to claim 1 or 2, characterized in that: At least one of the optoelectronic semiconductor components (11) is a light detector or a light emitter.

20. The optoelectronic device according to claim 19, characterized in that At least one of the optoelectronic semiconductor components (11) is a photodiode or an LED.

21. The optoelectronic device according to claim 19, characterized in that In the case of two or more optoelectronic semiconductor components (11), all optoelectronic semiconductor components (11) are light detectors or light emitters.

22. The optoelectronic device according to claim 19, characterized in that In the case of two or more optoelectronic semiconductor components (11), at least one light detector and at least one light emitter are present.

23. A method for manufacturing an optoelectronic device, the optoelectronic device being an optoelectronic device according to any one of claims 1 to 22, wherein: providing a carrier (15) for at least one of the optoelectronic semiconductor components (11), At least one of the optoelectronic semiconductor components (11) is arranged on the upper side (13) of the carrier (15), and At least one light channel (17) associated with the optoelectronic semiconductor component (11) is arranged on the carrier (15), The light channel (17) is constructed in a solid housing block (19), and The light channel (17) is designed or configured such that the light channel (17) extends between a first end (21) of the light channel (17) and a second end (27) of the light channel (17), the first end (21) being remote from a photoactive surface (23) of the optoelectronic semiconductor component (11) and having an opening into the exterior. wherein the second end (27) of the light channel (17) has an opening oriented toward the photoactive surface (23) of the optoelectronic semiconductor component (11), wherein at least one of the light channels (17) extends non-linearly between the first end (21) and the second end (27) of the light channel (17), and The light channel (17) has a cavity (31) extending between the first end (21) and the second end (27), the cavity (31) being capable of being filled with a light-transmitting material, and wherein an inner wall (33) surrounds the cavity (31), and wherein at least a sub-region of the inner wall (33) or the entire inner wall (33) is constructed to be reflective.

24. A motor vehicle having at least one interior space element, wherein: At least one optoelectronic device produced by the method according to claim 23 or according to any one of claims 1 to 22 is integrated into the interior space element.

25. The motor vehicle according to claim 24, characterized in that The interior space element is an instrument panel.

26. The motor vehicle according to claim 24, characterized in that The optoelectronic device is located beneath a cover which is at least partially transparent for the light to be received or emitted.

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