Power amplification circuit and semiconductor device

Abstract

The present application provides a kind of power amplifier circuit and semiconductor device.Power amplifier circuit has the 1st amplifier of signal distribution from input signal is amplified, the 2nd amplifier of signal with different phase is amplified, the 3rd amplifier, the 4th amplifier and matching circuit, matching circuit has: the 1st wiring, with the output terminal of the 1st amplifier is connected with the 1st end and the input terminal of the 3rd amplifier is connected with the 2nd end;The 2nd wiring, with the input terminal of the 3rd amplifier is connected with the 1st end and the 2nd end of power supply is connected, and with the 1st wiring is electromagnetically coupled;The 3rd wiring, with the output terminal of the 2nd amplifier is connected with the 1st end and the input terminal of the 4th amplifier is connected with the 2nd end;And the 4th wiring, with the input terminal of the 4th amplifier is connected with the 1st end and the 2nd end of power supply is connected, and with the 3rd wiring is electromagnetically coupled.

Description

TECHNICAL FIELD

[0001] The present application relates to a power amplification circuit and a semiconductor device. BACKGROUND

[0002] There is a differential amplification circuit that transforms a single-ended signal (unbalanced signal) into a pair of differential signals (balanced signal) by a transformer, and amplifies the differential signals by 2 amplifiers respectively (for example, Patent Literature 1). Figure 31 In Patent Literature 1, as a prior art, a diagram showing a general structure of a differential amplification circuit is described. In the diagram, a differential amplification circuit 72 is shown. Figure 31 In the differential amplification circuit 72 shown, between an input amplifier 60 and a positive-side amplifier 20 and a negative-side amplifier 26, capacitors 58, 98, 102 and an input transformer T2 are provided.

[0003] The input transformer T2 includes a primary winding 46 and a secondary winding 48. The primary winding 46 has a first end 54 connected to a voltage supply node VCC1 and a second end 56 connected to a signal output end 62 of the input amplifier 60. The capacitor 58 is connected between the first end 54 and the second end 56 of the primary winding 46. The capacitor 102 is connected between the first end 54 of the primary winding 46 and ground.

[0004] The secondary winding 48 has a first end 50 connected to a first signal input end 22 of the positive-side amplifier 20 and a second end 52 connected to a second signal input end 28 of the negative-side amplifier 26. The capacitor 98 is connected between the first signal input end 22 and the second signal input end 28, and the capacitance is adjusted by a controller.

[0005] In the differential amplification circuit 72 described in Patent Literature 1, the circuit between the input amplifier 60 and the positive-side amplifier 20 and the negative-side amplifier 26 becomes an inter-stage matching circuit that matches the impedance between the input amplifier 60 and the positive-side amplifier 20 and the negative-side amplifier 26.

[0006] PRIOR ART DOCUMENTS

[0007] PATENT LITERATURE

[0008] Patent Literature 1: US Patent No. 10411660

[0009] Patent Literature 2: US Patent No. 5808518

[0010] Patent Literature 3: US Patent No. 2470307

[0011] The interstage matching circuit described in Patent Document 1 transmits the signal output from the input amplifier 60 to the positive amplifier 20 and the negative amplifier 26 while suppressing power loss. However, in the interstage matching circuit described in Patent Document 1, the bandwidth that can effectively match the impedance between the input amplifier 60 and the positive amplifier 20 and the negative amplifier 26 sometimes becomes narrow.

[0012] In this case, depending on the frequency of the signal, the power loss of the signal will increase as it is transmitted from the input amplifier 60 to the positive amplifier 20 and the negative amplifier 26. Summary of the Invention

[0013] The problem that the invention aims to solve

[0014] The present invention was made in view of the following circumstances, and its object is to provide a power amplifier circuit and semiconductor device that amplifies signals over a wide frequency range while suppressing power loss, in a structure in which a matching circuit is provided between the amplifier on the input side and the amplifier on the output side.

[0015] Methods for solving problems

[0016] One aspect of the present invention relates to a power amplifier circuit comprising: a first amplifier, receiving a first signal allocated from an input signal as input, and having an output terminal for outputting a first amplified signal amplified from the first signal; a second amplifier, receiving a second signal allocated from the input signal having a phase different from the first signal as input, and having an output terminal for outputting a second amplified signal amplified from the second signal; a third amplifier, having an input terminal for receiving the first amplified signal, amplifying the first amplified signal and outputting a third amplified signal; a fourth amplifier, having an input terminal for receiving the second amplified signal, amplifying the second amplified signal and outputting a fourth amplified signal; and a matching circuit, connecting the first amplifier and the second amplifier to the input signal. Between the third amplifier and the fourth amplifier, the first amplified signal and the second amplified signal pass through. The matching circuit includes: a first wiring having a first end connected to the output terminal of the first amplifier and a second end connected to the input terminal of the third amplifier; a second wiring having a first end connected to the output terminal of the second amplifier and a second end connected to the input terminal of the fourth amplifier; and a current sensing wiring having a low-impedance node, a third wiring connected to the low-impedance node and electromagnetically coupled to the first wiring, and a fourth wiring connected to the low-impedance node and electromagnetically coupled to the second wiring, and connected between the second end of the first wiring and the second end of the second wiring.

[0017] Invention Effects

[0018] According to the present invention, a power amplifier circuit and a semiconductor device are provided that amplifies signals over a wide frequency range while suppressing power loss, in a structure in which a matching circuit is provided between an amplifier on the input side and an amplifier on the output side. Attached Figure Description

[0019] Figure 1 This is a circuit diagram of the power amplifier circuit according to the first embodiment of the present invention.

[0020] Figure 2 This is a diagram illustrating an example of the frequency variation of the impedance ZL201 in the power amplifier circuit according to the first embodiment of the present invention.

[0021] Figure 3 This is a diagram illustrating an example of frequency variation of losses in a power amplifier circuit according to the first embodiment of the present invention.

[0022] Figure 4 This is a perspective view schematically showing an example of the layout of transformers 316 and 317 according to the first embodiment of the present invention.

[0023] Figure 5 Viewed from above Figure 4 Top view of windings 313 and 314 shown.

[0024] Figure 6 This is a circuit diagram of the power amplifier circuit according to the second embodiment of the present invention.

[0025] Figure 7 This is a circuit diagram of the power amplifier circuit according to the third embodiment of the present invention.

[0026] Figure 8 This is a circuit diagram of the power amplifier circuit according to the fourth embodiment of the present invention.

[0027] Figure 9 This is a circuit diagram of the power amplifier circuit according to the fifth embodiment of the present invention.

[0028] Figure 10 This is a circuit diagram of the power amplifier circuit according to the sixth embodiment of the present invention.

[0029] Figure 11 This is a circuit diagram of the power amplifier circuit according to the seventh embodiment of the present invention.

[0030] Figure 12 This is a circuit diagram of the power amplifier circuit according to the eighth embodiment of the present invention.

[0031] Figure 13This is the circuit diagram of the power amplifier circuit involved in the reference example.

[0032] Figure 14 This is a diagram illustrating an example of the frequency variation of the impedance ZLR201 in the power amplifier circuit involved in the reference example.

[0033] Figure 15 This is a diagram illustrating an example of the frequency variation of losses in the power amplifier circuit involved in the reference example.

[0034] Figure 16 This is a circuit diagram of the power amplifier circuit according to the ninth embodiment of the present invention.

[0035] Figure 17 This is a perspective view schematically showing a first example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention.

[0036] Figure 18 Viewed from above Figure 17 Top view of windings 313 and 314 shown.

[0037] Figure 19 This is a perspective view schematically showing a second example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention.

[0038] Figure 20 Viewed from above Figure 19 Top view of windings 313 and 314 shown.

[0039] Figure 21 This is a perspective view schematically showing a third example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention.

[0040] Figure 22 Viewed from above Figure 21 The top view of transformers 316 and 317 is shown.

[0041] Figure 23 This is a circuit diagram of the power amplifier circuit according to the 10th embodiment of the present invention.

[0042] Figure 24 This is a circuit diagram of the power amplifier circuit according to the 11th embodiment of the present invention.

[0043] Figure 25 This is a circuit diagram of the interstage matching circuits 2301F and 2301S according to the 11th embodiment of the present invention.

[0044] Figure 26 This is a diagram showing a first example of the layout of the amplifier of the power stage according to the 11th embodiment of the present invention.

[0045] Figure 27 This is a second example of the layout of the amplifier of the power stage according to the 11th embodiment of the present invention.

[0046] Figure 28 This is a circuit diagram of the interstage matching circuits 2401F and 2401S according to the 12th embodiment of the present invention.

[0047] Figure 29 This is a diagram illustrating an example of the layout of an amplifier for a power stage according to the 13th embodiment of the present invention.

[0048] Figure 30 This is a diagram illustrating an example of the layout of an amplifier for a power stage according to the 14th embodiment of the present invention.

[0049] Figure 31 This is a diagram showing the general structure of a differential amplifier circuit.

[0050] Explanation of reference numerals in the attached figures

[0051] 11, 12, 13, 14, 15, 16, 17, 18, 90… power amplifier circuits;

[0052] 31…Input terminals;

[0053] 32... Output terminals;

[0054] 101...Power divider;

[0055] 201, 221... amplifiers;

[0056] Interstage matching circuits for stages 301, 302, 303, 304...

[0057] 311, 312, 313, 314... windings;

[0058] 315...Power supply node;

[0059] Nodes 318, 319...

[0060] 316, 317... transformers;

[0061] 321, 322... windings;

[0062] 331... capacitor;

[0063] 341...winding;

[0064] 351, 352... Current sensing wiring section;

[0065] 353...grounding node;

[0066] 401, 402, 403, 404... inter-stage matching circuits;

[0067] Transmission lines 411, 412, 413, 414...

[0068] 415...Power supply node;

[0069] Nodes 418, 419…

[0070] 416, 417… coupling lines;

[0071] 451, 452... Current sensing wiring section;

[0072] 453…grounding node;

[0073] 501, 501F, 501S, 521, 521F, 521S… amplifiers;

[0074] 551… capacitor;

[0075] 601… Power combiner;

[0076] Groups 701F, 701S…

[0077] 1301… inter-stage matching circuit;

[0078] 1351...Current sensing wiring section;

[0079] 1401... Interstage matching circuit;

[0080] 1451...Current sensing wiring section;

[0081] 2301F, 2301S... interstage matching circuits;

[0082] 2401F, 2401S... interstage matching circuits. Detailed Implementation

[0083] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the same reference numerals will be used to label the same elements, and repeated descriptions will be omitted as much as possible.

[0084] [First Implementation]

[0085] The semiconductor device 1 and the power amplifier circuit 11 according to the first embodiment will be described. Figure 1This is a circuit diagram of a power amplifier circuit according to the first embodiment of the present invention. A semiconductor device 1 includes a power amplifier circuit 11. The semiconductor device 1 is, for example, a semiconductor chip forming the power amplifier circuit 11. The power amplifier circuit 11 is a circuit that amplifies an input signal (radio frequency signal) RFin and outputs an output signal (amplified signal) RFout. The power amplifier circuit 11 includes a power divider 101, amplifiers 201 (first amplifier) ​​and 221 (second amplifier), an interstage matching circuit 301, amplifiers 501 (third amplifier) ​​and 521 (fourth amplifier), a capacitor 551, and a power combiner 601. Amplifiers 201 and 221 form a differential pair in the primary stage (driver stage). Amplifiers 501 and 521 form a differential pair in the output stage (power stage). Amplifier 221 has input-output characteristics that are substantially the same as those of amplifier 201. Amplifier 521 has input-output characteristics that are substantially the same as those of amplifier 501.

[0086] In this embodiment, amplifiers 201, 221, 501, and 521 are described as including bipolar transistors such as heterojunction bipolar transistors (HBTs). Alternatively, amplifiers 201, 221, 501, and 521 may also include other transistors such as metal-oxide-semiconductor field-effect transistors (MOSFETs). In this case, simply reread the base, collector, and emitter as gate, drain, and source, respectively.

[0087] The power divider 101 receives the input signal RFin through the input terminal 31 and divides the input signal RFin into signals RF1 (first signal) and RF2 (second signal) with different phases. In this embodiment, the phase difference between signals RF1 and RF2 is 180°. The power divider 101 supplies signals RF1 and RF2 to amplifiers 201 and 221, respectively.

[0088] Specifically, the power divider 101 includes a transformer 102 having a primary winding (inductor) 103 and a secondary winding (inductor) 104. The primary winding 103 has a first terminal connected to the input terminal 31 and a second terminal grounded. The secondary winding 104 has a first terminal connected to the amplifier 201 and a second terminal connected to the amplifier 221, and is electromagnetically coupled to the primary winding 103.

[0089] The input signal RFI is input from input terminal 31 to the first terminal of the primary winding 103, thereby generating signals RF1 and RF2 at the first and second terminals of the secondary winding 104, which are electromagnetically coupled to the primary winding 103, respectively. The phase difference between signals RF1 and RF2 is 180°. However, due to uneven wiring lengths in the circuit, there may be cases where the phase difference deviates from 180°.

[0090] Amplifier 201 includes: an input terminal 201a connected to the first end of the secondary winding 104 and receiving an input signal RF1; and an output terminal 201b that outputs an amplified signal RF3 (the first amplified signal) that amplifies the signal RF1.

[0091] In detail, amplifier 201 further includes transistor 202, capacitor 203, and resistor 204. Capacitor 203 has a first terminal and a second terminal connected to input terminal 201a. Resistor 204 has a first terminal supplied with a bias voltage VBB1 and a second terminal connected to the second terminal of capacitor 203. Transistor 202 has a collector connected to output terminal 201b, a base connected to the second terminal of capacitor 203 and the second terminal of resistor 204, and a grounded emitter.

[0092] Amplifier 221 includes: an input terminal 221a connected to the second end of the secondary winding 104 and receiving the input signal RF2; and an output terminal 221b that outputs an amplified signal RF4 (the second amplified signal) that amplifies the signal RF2.

[0093] In detail, amplifier 221 further includes transistor 222, capacitor 223, and resistor 224. Capacitor 223 has a first terminal and a second terminal connected to input terminal 221a. Resistor 224 has a first terminal supplied with a bias voltage VBB2 and a second terminal connected to the second terminal of capacitor 223. Transistor 222 has a collector connected to output terminal 221b, a base connected to the second terminal of capacitor 223 and the second terminal of resistor 224, and a grounded emitter.

[0094] In this embodiment, the emitter of transistor 202 in amplifier 201 and the emitter of transistor 222 in amplifier 221 are connected. Thus, the emitters of transistors 202 and 222 are virtually short-circuited, which increases the gain of the primary differential pair.

[0095] Interstage matching circuit 301 is a circuit that matches the impedance between amplifiers 201 and 221 and amplifiers 501 and 521 (hereinafter, sometimes referred to as differential pair), allowing amplified signals RF3 and RF4 to pass through the differential pairs. Specifically, interstage matching circuit 301 includes capacitor 310, transformers 316 and 317, and a power supply node 315 (low-impedance node). Power supply node 315 is a node that can be considered virtually grounded during differential operation. Therefore, power supply node 315 appears as a low-impedance node at odd multiples of the frequencies of amplified signals RF3 and RF4.

[0096] Capacitor 310 has a first terminal connected to the output terminal 201b of amplifier 201 and a second terminal connected to the output terminal 221b of amplifier 221. Transformer 316 includes winding 311 (first wiring) and winding 313 (third wiring). Transformer 317 includes winding 312 (second wiring) and winding 314 (fourth wiring). Current sensing wiring section 351 includes power supply node 315 and windings 313 and 314. Power supply node 315 is disposed between windings 313 and 314. Current sensing wiring section 351 is connected between node 318 (first node) and node 319 (second node).

[0097] The winding 311 in the transformer 316 has a first terminal connected to the output terminal 201b of the amplifier 201 and the first terminal of the capacitor 310, and a second terminal connected to the node 318.

[0098] Winding 313 has a first terminal connected to node 318 and a second terminal connected to power supply node 315, and is electromagnetically coupled to winding 311. Here, winding 311 has an inductance greater than that of winding 313. Power supply node 315 is supplied with the power supply voltage VCC3 of amplifiers 201 and 221. Power supply node 315 is a low-impedance node and is grounded for AC applications.

[0099] The winding 312 in the transformer 317 has a first terminal connected to the output terminal 221b of the amplifier 221 and the second terminal of the capacitor 310, and a second terminal connected to the node 319. The winding 314 has a first terminal connected to the node 319 and a second terminal connected to the power supply node 315, and is electromagnetically coupled to the winding 312.

[0100] Here, winding 312 has an inductance that is substantially the same as that of winding 311. Winding 314 has an inductance that is substantially the same as that of winding 313. Furthermore, the electromagnetic field coupling of windings 312 and 314 is substantially the same as that of windings 311 and 313. That is, transformer 317 has characteristics substantially the same as those of transformer 316.

[0101] The Ruthroff-type matching circuit is composed of transformers 316 and 317.

[0102] Amplifier 501 includes an input terminal 501a connected to node 318 and an output terminal 501b. An amplified signal RF3, which has passed through interstage matching circuit 301, is input to input terminal 501a. Output terminal 501b outputs an amplified signal RF5 (the third amplified signal), which amplifies the amplified signal RF3.

[0103] In detail, amplifier 501 further includes transistor 502 (amplifying element), capacitor 503, and resistor 504. Capacitor 503 has a first terminal and a second terminal connected to input terminal 501a. Resistor 504 has a first terminal supplied with a bias voltage VBB3 and a second terminal connected to the second terminal of capacitor 503. Transistor 502 has a collector connected to output terminal 501b, a base connected to the second terminal of capacitor 503 and the second terminal of resistor 504, and a grounded emitter. Furthermore, transistor 502 is not limited to a bipolar transistor and can also be a field-effect transistor. In this case, simply replacing the collector with the drain, the emitter with the source, and the base with the gate will suffice.

[0104] Furthermore, while the amplifier 501 has been described as having a transistor unit comprising a transistor 502, a capacitor 503, and a resistor 504, it is not limited to this configuration. Alternatively, the amplifier 501 may have multiple transistor units connected in parallel.

[0105] Amplifier 521 includes an input terminal 521a connected to node 319 and an output terminal 521b. An amplified signal RF4, which has passed through interstage matching circuit 301, is input to input terminal 521a. Output terminal 521b outputs an amplified signal RF6 (the fourth amplified signal), which amplifies the amplified signal RF4.

[0106] In detail, amplifier 521 further includes transistor 522 (amplifying element), capacitor 523, and resistor 524. Capacitor 523 has a first terminal and a second terminal connected to input terminal 521a. Resistor 524 has a first terminal supplied with a bias voltage VBB4 and a second terminal connected to the second terminal of capacitor 523. Transistor 522 has a collector connected to output terminal 521b, a base connected to the second terminal of capacitor 523 and the second terminal of resistor 524, and a grounded emitter. Furthermore, transistor 522 is not limited to a bipolar transistor and can also be a field-effect transistor. In this case, simply replacing the collector with the drain, the emitter with the source, and the base with the gate will suffice.

[0107] Furthermore, while the amplifier 521 has been described as having a transistor unit comprising a transistor 522, a capacitor 523, and a resistor 524, it is not limited to this configuration. Alternatively, the amplifier 521 may have multiple transistor units connected in parallel.

[0108] In this embodiment, the emitter of transistor 502 in amplifier 501 and the emitter of transistor 522 in amplifier 521 are connected. Thus, the emitters of transistors 502 and 522 are virtually short-circuited, increasing the gain of the differential pair in the output stage.

[0109] Capacitor 551 has a first terminal connected to the output terminal 501b of amplifier 501 and a second terminal connected to the output terminal 521b of amplifier 521. Capacitor 551, together with power combiner 601, adjusts the load impedance of amplifiers 501 and 521.

[0110] The power combiner 601 combines the amplified signals RF5 and RF6 and outputs the amplified signal RFout as the input signal RFI.

[0111] Specifically, the power combiner 601 includes a transformer 602 having a primary winding (inductor) 603 and a secondary winding (inductor) 604. The primary winding 603 has a first terminal connected to the output terminal 501b of amplifier 501 and the first terminal of capacitor 551, a neutral point for the power supply voltage VCC4 supplied to amplifiers 501 and 521, and a second terminal connected to the output terminal 521b of amplifier 521 and the second terminal of capacitor 551. The secondary winding 604 has a first terminal connected to output terminal 32 and a grounded second terminal, and is electromagnetically coupled to the primary winding 603.

[0112] Since the phase difference between the amplified signal RF5 input to the first terminal of the primary winding 603 and the amplified signal RF6 input to the second terminal of the primary winding 603 is 180°, a voltage with an amplitude twice that of the signal input to the first terminal of the primary winding 603 is applied to the primary winding 603. Based on this voltage, an output signal RFout is generated at the first terminal of the secondary winding 604, which is electromagnetically coupled to the primary winding 603, and power is synthesized.

[0113] [simulation]

[0114] The simulation of the impedance ZL201 when viewed from the output terminal 201b of amplifier 201 to amplifier 501 is explained. Furthermore, the impedance ZL221 when viewed from the output terminal 221b of amplifier 221 to amplifier 521 is approximately the same as the impedance ZL201, therefore the explanation of impedance ZL221 is omitted.

[0115] The inventors used the capacitance of capacitor 310 included in the interstage matching circuit 301, and the inductance of windings 311, 312, 313, and 314 as parameters to simulate the frequency variation of impedance ZL201. The inventors optimized the parameters within a frequency range of 1.7 GHz to 2.7 GHz, making impedance ZL201 a fixed real value.

[0116] Figure 2 This is a diagram illustrating an example of the frequency variation of the impedance ZL201 in the power amplifier circuit according to the first embodiment of the present invention. Figure 2 The figure shows the impedance ZL201 variation curve Z-PA on the Smith chart, calculated based on the optimized parameters, when the frequency is varied from 1.5 GHz to 6.7 GHz. Additionally, the variation curve Z-PA is the impedance ZL201 divided by the characteristic impedance Z0 of 6 ohms.

[0117] The symbols Z1, Z2, Z3, and Z4 on the variation curve Z-PA represent the impedance ZL201 at frequencies of 1.7 GHz, 2.1 GHz, 2.3 GHz, and 2.7 GHz, respectively. In this way, the symbols Z1, Z2, Z3, and Z4 are concentrated at a single point on the real number axis, thus effectively suppressing frequency variations in the impedance ZL201.

[0118] In addition, the inventors simulated the losses in the power amplifier circuit 11 from the output terminal 201b of amplifier 201 to the input terminal 501a of amplifier 501. Figure 3 This is a diagram illustrating an example of frequency variation in losses in a power amplifier circuit according to the first embodiment of the present invention. Additionally, in Figure 3In the diagram, the horizontal axis shows the frequency in "GHz" and the vertical axis shows the loss in "dB".

[0119] exist Figure 3 The diagram shows the loss curve L-PA calculated based on the optimized parameters when the frequency is varied from 1.5 GHz to 2.7 GHz. The losses L1, L2, L3, and L4 on the loss curve L-PA are the losses at frequencies of 1.7 GHz, 2.1 GHz, 2.3 GHz, and 2.7 GHz, respectively.

[0120] In this way, in the power amplifier circuit 11, the loss becomes less than -0.27dB and more than -0.43dB in the frequency range of 1.7GHz to 2.7GHz, which can effectively suppress the loss in the interstage matching circuit 301.

[0121] [Effects]

[0122] To simplify the explanation of its effects, let's assume that the interstage matching circuit 301 does not include capacitor 310. That is, let's assume that the interstage matching circuit 301 only includes transformers 316 and 317. For example... Figure 1 As shown, for example, when the current I1 increases from the first end to the second end of winding 311, a current I2 is induced in winding 313 from the second end to the first end due to electromagnetic field coupling with winding 311. Currents I1 and I2 flow into node 318, and therefore, according to Kirchhoff's first law (the law of continuity of current), a current (I1+I2) flows from node 318 towards amplifier 501.

[0123] On the other hand, the phase difference between signals RF1 and RF2 is 180°, so the current I4 increases, for example, in the direction from the second end to the first end of winding 312. At this time, in winding 314, through electromagnetic field coupling with winding 312, a current I3 is induced in the direction from the first end to the second end of winding 314. Currents I3 and I4 flow out from node 319, so according to Kirchhoff's first law (the law of continuity of current), a current (I3 + I4) flows in the direction from amplifier 521 to node 319.

[0124] Here, current I4 has approximately the same magnitude as current I1. Current I3 has approximately the same magnitude as current I2. In this case, the current I3 flowing into power supply node 315 becomes current I2.

[0125] In addition, for example, if there is no loss in the interstage matching circuit 301, the power at the output terminal 201b of amplifier 201 and the power at the input terminal 501a of amplifier 501 become equal, so the following equation (1) holds.

[0126] [Mathematical Expression 1]

[0127] ZL201×I1 2 =ZS501×(I1+I2) 2

[0128]

[0129] Here, impedance ZS501 is the impedance observed from the input terminal 501a of amplifier 501 when looking at the output terminal 32.

[0130] Generally, the input impedance of the output stage (power stage) amplifier 501 is smaller than the output load impedance of the primary stage (driver stage) amplifier 201. Therefore, by appropriately setting the mutual inductance between windings 311 and 313 using the number of turns of winding 311 and winding 313, and by changing the ratio of the magnitudes of current I1 and current I2, the impedance ZL201 can be adjusted to correspond to the output load impedance. Similarly, for windings 312 and 314, as with windings 311 and 313, by changing the ratio of the magnitudes of current I4 and current I3, the impedance ZL221 can be adjusted to correspond to the output load impedance. This allows for impedance matching between the differential pairs.

[0131] Furthermore, when the inductances of windings 311, 312, 313, and 314 are relatively large, equation (1) holds regardless of frequency. That is, when the inductances of windings 311, 312, 313, and 314 are relatively large, even if capacitor 310 is not provided in the interstage matching circuit 301, transformers 316 and 317 can still match the impedance between differential pairs over a wide frequency range.

[0132] However, for example, when the power amplifier circuit 11 is formed on a semiconductor chip, the dimensions of windings 311, 312, 313, and 314 become smaller, and therefore the inductance of each winding becomes smaller. Consequently, the frequency range in which the impedance between the differential pairs is well matched by transformers 316 and 317 can sometimes be narrowed. To address this, by connecting capacitor 310 between amplifiers 201 and 221 and transformers 316 and 317, the frequency range in which the impedance between the differential pairs is well matched by the inter-stage matching circuit 301 can be expanded, even when the inductance of each winding is small.

[0133] [layout]

[0134] An example of the layout of transformers 316 and 317 in the semiconductor device 1 according to the first embodiment will be described. In the accompanying drawings, the x-axis, y-axis, and z-axis are sometimes shown. The x-axis, y-axis, and z-axis form a right-handed 3-dimensional orthogonal coordinate system. Hereinafter, the direction of the arrow on the z-axis is sometimes referred to as the z-axis + side, and the direction opposite to the arrow is sometimes referred to as the z-axis - side; the same applies to the other axes. Additionally, the z-axis + side and z-axis - side are sometimes referred to as the "upper side" and the "lower side," respectively. Here, the direction of clockwise rotation from the upper side to the lower side is defined as the clockwise direction cw. Furthermore, the direction of counterclockwise rotation from the upper side to the lower side is defined as the counterclockwise direction ccw.

[0135] Figure 4 This is a perspective view schematically showing an example of the layout of transformers 316 and 317 according to the first embodiment of the present invention.

[0136] like Figure 4 As shown, the semiconductor device 1, for example, has: a first layer (not shown) having a surface P1 (first surface) that is substantially parallel to the xy plane; a second layer (not shown) having a surface P2 located on the z-axis + side (upper side) relative to surface P1, which is substantially parallel to surface P1; and a third layer having a surface (not shown, sometimes referred to as the upper surface) located on the z-axis + side (upper side) relative to surface P2, which is substantially parallel to surface P2.

[0137] Windings 311 and 312 are mainly formed on surface P2. Winding 311 is mainly in surface P2, wound approximately 2 turns around an axis z1 that is approximately parallel to the z-axis. In this embodiment, winding 311 has winding portions 311aa and 311ab formed on surface P2, and connecting portion 311ac. Connecting portion 311ac includes a cross portion 311aca formed on an upper surface (not shown) relative to surface P2, and interlayer vias 311acb and 311acc. Winding portion 311aa has a first end and a second end that become node 318, and from the first end to the second end, it is wound approximately 1.5 turns around the z1 axis in a counterclockwise direction ccw while approaching the z1 axis. The winding portion 311ab has a first end and a second end connected to the output terminal 201b. The winding portion 311aa is wound approximately 180° clockwise (cw) from the first end to the second end along its x-axis side. The connecting portion 311ac connects the second end of the winding portion 311aa and the second end of the winding portion 311ab, preventing short circuits at the intersection with the winding portion 311aa. Specifically, by forming the intersection portion 311aca on an upper surface different from the surface P2 on which the winding portion 311aa is formed, short circuits between the intersection portion 311aca and the winding portion 311aa are prevented. The two ends of the intersection portion 311aca are connected to the second ends of the winding portion 311aa and the winding portion 311ab, respectively, via interlayer vias 311acb and 311acc.

[0138] Winding 312 has a shape substantially the same as winding 311 and is located on the x-axis+ side of winding 311. Specifically, winding 312 is wound approximately two turns around z2 axis, which is substantially parallel to the z-axis and located on the x-axis+ side of z1 axis, and has winding portions 312aa and 312ab formed on surface P2, and connecting portion 312ac. Connecting portion 312ac includes a cross portion 312aca formed on the upper side surface (not shown), and interlayer vias 312acb and 312acc. Winding portion 312aa has a first end and a second end connected to output terminal 221b, and from the first end to the second end, it is wound approximately one and a half turns around z2 axis in a counterclockwise direction ccw while approaching z2 axis. The winding portion 312ab has a first end and a second end that become a node 319. From the first end to the second end, the x-axis side of the winding portion 312aa is wound approximately 180° clockwise in the direction cw. The connecting portion 312ac connects the second end of the winding portion 312aa and the second end of the winding portion 312ab, preventing short circuits at the intersection with the winding portion 312aa. Specifically, by forming the intersection portion 312aca on an upper surface different from the surface P2 on which the winding portion 312aa is formed, short circuits between the intersection portion 312aca and the winding portion 312aa are prevented. The two ends of the intersection portion 312aca are connected to the second ends of the winding portion 312aa and the second end of the winding portion 312ab, respectively, through interlayer vias 312acb and 312acc.

[0139] Figure 5 Viewed from above Figure 4 The top view of windings 313 and 314 is shown. Figure 4 as well as Figure 5 As shown, the current sensing wiring portion 351 is formed on the surface P1. When viewed from above the surface P1, the windings 313 and 314 respectively have curved portions 313ad and 314ad that bend in a direction away from each other.

[0140] Furthermore, when viewed from above P1, the line La passing through the midpoint MP of nodes 318 and 319 and the power supply node 315 does not intersect with windings 313 and 314 except for the power supply node 315. Also, when viewed from above P1, windings 313 and 314 are approximately symmetrical with respect to line La. Additionally, although the power supply node is connected at the midpoint MP, it may not be exactly the midpoint, but rather deviate to some degree from the midpoint. Furthermore, the midpoint MP on the line connecting nodes 318 and 319 may not be located at an equidistant point from nodes 318 and 319. Specifically, for example, on the line connecting nodes 318 and 319, the midpoint MP may be located at a point less than 30% of the length of winding 313 or 314 from a point located at an equidistant point from nodes 318 and 319.

[0141] Specifically, winding 313 has a winding portion 313aa and a connecting portion 313ab, located below winding 311. In this embodiment, winding portion 313aa has a first end and a second end connected to node 318 via an interlayer via 301ap, which is substantially parallel to the z-axis. From the first end to the second end, winding portion 313aa is wound around the z1 axis in a clockwise direction cw for more than 180° and less than 360°. Winding portion 313aa includes a bent portion 313ad that bends toward the x-axis. Connecting portion 313ab extends substantially parallel to the x-axis and connects the second end of winding portion 313aa to power supply node 315.

[0142] Winding 314 has a winding portion 314aa and a connecting portion 314ab, located below winding 312. Viewed from the opposite side P1, winding portion 314aa has a shape that is approximately symmetrical with respect to line La to winding portion 313aa. Specifically, winding portion 314aa has a first end and a second end connected to node 319 via an interlayer via 301am that is approximately parallel to the z-axis, and is wound more than 180° and less than 360° counterclockwise around the z2 axis from the first end to the second end. Winding portion 314aa includes a curved portion 314ad that bends towards the x-axis. Viewed from the opposite side P1, connecting portion 314ab has a shape that is approximately symmetrical with respect to line La to connecting portion 313ab, connecting the second end of winding portion 314aa to power supply node 315.

[0143] [Effects]

[0144] Generally, in a differential amplifier circuit, if the input-output characteristics of the path that amplifies one of the signals constituting the differential signal are consistent with the input-output characteristics of the path that amplifies the other signal constituting the differential signal, then the differential amplifier circuit can operate ideally.

[0145] For example, in a structure where an interstage matching circuit is set between the differential pair of the drive stage and the differential pair of the power stage, if the interstage matching circuit has an asymmetrical structure due to manufacturing constraints such as limited configuration space, the distortion characteristics may sometimes deteriorate due to a decrease in gain or output or a mismatch (inconsistency) in load impedance relative to the ideal input-output characteristics.

[0146] In response to this, in semiconductor device 1, since the interstage matching circuit 301 in power amplifier circuit 11 has a symmetrical structure (see reference...) Figure 4 as well as Figure 5Therefore, the input-output characteristics (hereinafter sometimes referred to as positive-side input-output characteristics) when signal RF1 is amplified to signal RF5 and the input-output characteristics (hereinafter sometimes referred to as negative-side input-output characteristics) when signal RF2 is amplified to signal RF6 can be made close to equal gain and equal phase. As a result, the power amplifier circuit 11 can be made close to an ideal differential amplifier circuit, and the deterioration of distortion characteristics can be suppressed. In addition, the impedance between the differential pairs can be matched using the impedance ratio expressed by equation (1).

[0147] Furthermore, when increasing the output of the power amplifier circuit 11, multiple transistor units are sometimes connected in parallel in amplifiers 501 and 521. In such a structure, impedances ZS501 and ZS521 become lower. Here, impedance ZS521 is the impedance observed when viewing the output terminal 32 from the input terminal 521a of amplifier 521.

[0148] Therefore, assuming the interstage matching circuit has an asymmetrical structure, this asymmetrical structure causes the transformed impedances ZL201 and ZL221 to be inconsistent, and sometimes the positive side input-output characteristics and the negative side input-output characteristics become inconsistent.

[0149] To address this, in the power amplifier circuit 11, since the interstage matching circuit 301 has a symmetrical structure (see reference...), Figure 4 as well as Figure 5 Therefore, the positive input / output characteristics and the negative input / output characteristics can be made consistent. In addition, by appropriately adjusting the mutual inductance between winding 311 and winding 313 and the mutual inductance between winding 312 and winding 314, the impedance between the differential pairs can be matched by the impedance ratio expressed by equation (1) while making the positive input / output characteristics and the negative input / output characteristics more ideally consistent.

[0150] [Second Implementation]

[0151] The power amplifier circuit 12 according to the second embodiment will be described. From the second embodiment onwards, descriptions of matters common to the first embodiment will be omitted, and only the differences will be described. In particular, the same effects resulting from the same structure will not be mentioned repeatedly in each embodiment.

[0152] Figure 6 This is a circuit diagram of the power amplifier circuit according to the second embodiment of the present invention. Figure 6 As shown, the power amplifier circuit 12 according to the second embodiment differs from the power amplifier circuit 11 according to the first embodiment in that it has an interstage matching circuit 401 instead of an interstage matching circuit 301.

[0153] Interstage matching circuit 401 is a circuit that matches the impedance between differential pairs, allowing amplified signals RF3 and RF4 to pass between the differential pairs. Specifically, interstage matching circuit 401 includes capacitor 310, coupling lines 416 and 417, and power supply node 415 (low impedance node).

[0154] As described above, capacitor 310 has a first terminal connected to the output terminal 201b of amplifier 201 and a second terminal connected to the output terminal 221b of amplifier 221. Coupling line 416 includes transmission line 411 (first wiring) and transmission line 413 (third wiring). Coupling line 417 includes transmission line 412 (second wiring) and transmission line 414 (fourth wiring). Current sensing wiring section 451 includes power supply node 415 and transmission lines 413 and 414. Power supply node 415 is disposed between transmission lines 413 and 414. Current sensing wiring section 451 is connected between node 418 (first node) and node 419 (second node).

[0155] The transmission line 411 in the coupling line 416 has a first end connected to the output terminal 201b of the amplifier 201 and the first end of the capacitor 310, and a second end connected to the node 418.

[0156] Transmission line 413 has a first end connected to node 418 and a second end connected to power supply node 415, and is electromagnetically coupled to transmission line 411. That is, transmission lines 411 and 413 are coupled between lines. Node 418 is connected to input terminal 501a of amplifier 501. Power supply voltage VCC3 of amplifiers 201 and 221 is supplied to power supply node 415.

[0157] The transmission line 412 in coupling line 417 has a first terminal connected to the output terminal 221b of amplifier 221 and the second terminal of capacitor 310, and a second terminal connected to node 419. Transmission line 414 has a first terminal connected to node 419 and a second terminal connected to power supply node 415, and is electromagnetically coupled to transmission line 412. That is, transmission lines 412 and 414 are line-to-line coupled. Node 419 is connected to the input terminal 521a of amplifier 521.

[0158] Here, the differential impedance between transmission lines 413 and 411 is approximately the same as the differential impedance between transmission lines 414 and 412. The electrical lengths of transmission lines 413 and 411 are approximately the same as the electrical lengths of transmission lines 414 and 412, respectively. Furthermore, the electromagnetic coupling between transmission lines 413 and 411 is approximately the same as the electromagnetic coupling between transmission lines 414 and 412. That is, coupling line 417 has characteristics approximately the same as coupling line 416. Coupling lines 416 and 417 constitute a Ruthroff-type matching circuit.

[0159] [Third Implementation]

[0160] The power amplifier circuit 13 according to the third embodiment will be described. Figure 7 This is a circuit diagram of the power amplifier circuit according to the third embodiment of the present invention. Figure 7 As shown, the power amplifier circuit 13 according to the third embodiment differs from the power amplifier circuit 11 according to the first embodiment in that it includes an inter-stage matching circuit 302 instead of an inter-stage matching circuit 301. The inter-stage matching circuit 302 and... Figure 1 Compared to the interstage matching circuit 301 shown, it also includes winding 321 (first inductor) and winding 322 (second inductor).

[0161] Winding 321 has a first end connected to node 318 and a second end connected to input terminal 501a of amplifier 501. Winding 322 has a first end connected to node 319 and a second end connected to input terminal 521a of amplifier 521.

[0162] In this way, by providing windings 321 and 322 between transformers 316 and 317 and amplifiers 501 and 521, the impedance changes caused by capacitors 503 and 523 constituting amplifiers 501 and 521, respectively, can be eliminated by windings 321 and 322. This reduces the frequency deviation of the load impedance of amplifiers 201 and 221.

[0163] [Fourth Implementation]

[0164] The power amplifier circuit 14 according to the fourth embodiment will be described. Figure 8 This is a circuit diagram of the power amplifier circuit according to the fourth embodiment of the present invention. Figure 8 As shown, the power amplifier circuit 14 according to the fourth embodiment differs from the power amplifier circuit 12 according to the second embodiment in that it includes an interstage matching circuit 402 instead of an interstage matching circuit 401. The interstage matching circuit 402 and... Figure 6Compared to the interstage matching circuit 401 shown, it also includes winding 321 (first inductor) and winding 322 (second inductor).

[0165] Winding 321 has a first end connected to node 418 and a second end connected to input terminal 501a of amplifier 501. Winding 322 has a first end connected to node 419 and a second end connected to input terminal 521a of amplifier 521.

[0166] In this way, by providing windings 321 and 322 between coupling lines 416 and 417 and amplifiers 501 and 521, the impedance changes caused by capacitors 503 and 523 constituting amplifiers 501 and 521, respectively, can be eliminated by windings 321 and 322. This reduces the frequency deviation of the load impedance of amplifiers 201 and 221.

[0167] [Fifth Implementation]

[0168] The power amplifier circuit 15 according to the fifth embodiment will be described. Figure 9 This is a circuit diagram of the power amplifier circuit according to the fifth embodiment of the present invention. Figure 9 As shown, the power amplifier circuit 15 according to the fifth embodiment differs from the power amplifier circuit 11 according to the first embodiment in that it includes an inter-stage matching circuit 303 instead of an inter-stage matching circuit 301. The inter-stage matching circuit 303 and... Figure 1 Compared to the interstage matching circuit 301 shown, it also includes a capacitor 331 (the second capacitor).

[0169] Capacitor 331 has a first terminal connected to node 318 and input terminal 501a of amplifier 501 and a second terminal connected to node 319 and input terminal 521a of amplifier 521.

[0170] To arbitrarily adjust the load impedance of amplifiers 201 and 221, it is necessary to change the ratio of the inductance of winding 311 to that of winding 313, and the ratio of the inductance of winding 312 to that of winding 314. In this case, in addition to the series circuit of windings 313 and 314, capacitor 331 is connected in parallel with this series circuit, thereby enabling adjustment of the imaginary part of the load impedance of amplifiers 201 and 221.

[0171] [Sixth Implementation]

[0172] The power amplifier circuit 16 according to the sixth embodiment will be described. Figure 10 This is a circuit diagram of the power amplifier circuit according to the sixth embodiment of the present invention. Figure 10As shown, the power amplifier circuit 16 according to the sixth embodiment differs from the power amplifier circuit 12 according to the second embodiment in that it includes an inter-stage matching circuit 403 instead of an inter-stage matching circuit 401. The inter-stage matching circuit 403 and... Figure 6 Compared to the interstage matching circuit 401 shown, it also includes capacitor 331 (second capacitor).

[0173] Capacitor 331 has a first terminal connected to node 418 and input terminal 501a of amplifier 501 and a second terminal connected to node 419 and input terminal 521a of amplifier 521.

[0174] To arbitrarily adjust the load impedance of amplifiers 201 and 221, it is necessary to change the ratio of the inductance of transmission line 411 to the inductance of transmission line 412, and the ratio of the inductance of transmission line 413 to the inductance of transmission line 414. In this case, in addition to the series circuit of transmission lines 412 and 414, capacitor 331 is connected in parallel with this series circuit, thereby enabling adjustment of the imaginary part of the load impedance of amplifiers 201 and 221.

[0175] [Seventh Implementation]

[0176] The power amplifier circuit 17 according to the seventh embodiment will be described. Figure 11 This is a circuit diagram of the power amplifier circuit according to the seventh embodiment of the present invention. Figure 11 As shown, the power amplifier circuit 17 according to the seventh embodiment differs from the power amplifier circuit 11 according to the first embodiment in that it includes an interstage matching circuit 304 instead of an interstage matching circuit 301. The interstage matching circuit 304 and... Figure 1 Compared to the interstage matching circuit 301 shown, it also includes a winding 341 (the third inductor).

[0177] The winding 341 has a first end connected to node 318 and input terminal 501a of amplifier 501 and a second end connected to node 319 and input terminal 521a of amplifier 521.

[0178] In this way, by configuring winding 341, the inductance of winding 341 can be used to adjust the changes in the imaginary part of the impedance caused by capacitors 503 and 523, which constitute amplifiers 501 and 521, respectively. As a result, the frequency deviation of the load impedance of amplifiers 201 and 221 can be reduced.

[0179] [Eighth Implementation]

[0180] The power amplifier circuit 18 according to the eighth embodiment will be described. Figure 12 This is a circuit diagram of the power amplifier circuit according to the eighth embodiment of the present invention.Figure 12 As shown, the power amplifier circuit 18 according to the eighth embodiment differs from the power amplifier circuit 12 according to the second embodiment in that it includes an interstage matching circuit 404 instead of an interstage matching circuit 401. The interstage matching circuit 404 and... Figure 6 Compared to the interstage matching circuit 401 shown, it also includes winding 341 (third inductor).

[0181] The winding 341 has a first end connected to node 418 and input terminal 501a of amplifier 501 and a second end connected to node 419 and input terminal 521a of amplifier 521.

[0182] In this way, by configuring winding 341, the inductance of winding 341 can be used to adjust the changes in the imaginary part of the impedance caused by capacitors 503 and 523, which constitute amplifiers 501 and 521, respectively. As a result, the frequency deviation of the load impedance of amplifiers 201 and 221 can be reduced.

[0183] [Reference Example]

[0184] The power amplifier circuit 90 involved in the reference example will be described. Figure 13 This is the circuit diagram of the power amplifier circuit involved in the reference example. For example... Figure 13 As shown, the power amplifier circuit 90 in the reference example differs from the power amplifier circuit 11 in the first embodiment in that it includes an interstage matching circuit 901 instead of an interstage matching circuit 301 and a capacitor 551. The interstage matching circuit 901 and... Figure 1 Compared to the interstage matching circuit 301 shown, capacitor 910 and transformer 913 are included instead of capacitor 310, transformer 316, and 317. Transformer 913 includes a primary winding (inductor) 911 and a secondary winding (inductor) 912.

[0185] Capacitor 910 has a first terminal connected to the output terminal 201b of amplifier 201 and a second terminal connected to the output terminal 221b of amplifier 221. The primary winding 911 of transformer 913 has a first terminal connected to the output terminal 201b of amplifier 201 and the first terminal of capacitor 910, a neutral point supplied with power supply voltage VCC3, and a second terminal connected to the output terminal 221b of amplifier 221 and the second terminal of capacitor 910.

[0186] The secondary winding 912 has a first terminal connected to the input terminal 501a of the amplifier 501 and a second terminal connected to the input terminal 521a of the amplifier 521, and is electromagnetically coupled to the primary winding 911.

[0187] The primary winding 603 in the power combiner 601 has a first terminal connected to the output terminal 501b of the amplifier 501, a neutral point supplied with the power supply voltage VCC4, and a second terminal connected to the output terminal 521b of the amplifier 521.

[0188] [simulation]

[0189] The simulation of the impedance ZLR201 when viewed from the output terminal 201b of amplifier 201 to amplifier 501 is explained. Furthermore, the impedance ZLR221 when viewed from the output terminal 221b of amplifier 221 to amplifier 521 is approximately the same as the impedance ZLR201, therefore the explanation of impedance ZLR221 is omitted.

[0190] The inventors used the capacitance of capacitor 910 included in the interstage matching circuit 901, the inductance of primary winding 911, and the inductance of secondary winding 912 as parameters to simulate the frequency variation of impedance ZLR201. The inventors optimized the parameters within the frequency range of 1.7 GHz to 2.7 GHz, making the impedance ZLR201 a fixed real value.

[0191] Figure 14 This is a diagram illustrating an example of the frequency variation of the impedance ZLR201 in the power amplifier circuit involved in the reference example. Figure 14 The figure shows the impedance Z-ref curve calculated based on the optimized parameters for the frequency variation from 1.5 GHz to 6.7 GHz on the Smith chart. Additionally, the Z-ref curve is the impedance ZLR201 divided by the characteristic impedance Z0 of 6 ohms.

[0192] The symbols Zr1, Zr2, Zr3, and Zr4 located on the Z-ref curve represent the impedances of ZLR201 at frequencies of 1.7 GHz, 2.1 GHz, 2.3 GHz, and 2.7 GHz, respectively. Thus, the symbols Zr1, Zr2, Zr3, and Zr4 are related to... Figure 2 Compared to the symbols Z1, Z2, Z3, and Z4 shown, they are distributed over a wider range on the Smith chart. That is, the interstage matching circuit 901 and... Figure 1 Compared to the interstage matching circuit 301 shown, it cannot suppress the frequency variation of impedance ZLR201 in the frequency range of 1.7 GHz to 2.7 GHz. In other words, Figure 1 Compared to the interstage matching circuit 901, the interstage matching circuit 301 shown can effectively suppress the frequency variation of impedance ZL201 in the frequency range of 1.7 GHz to 2.7 GHz.

[0193] In addition, the inventors simulated the losses in the power amplifier circuit 90 from the output terminal 201b of amplifier 201 to the input terminal 501a of amplifier 501. Figure 15 This is a diagram illustrating an example of the frequency variation of losses in the power amplifier circuit involved in the reference example. Additionally, in Figure 15 In the diagram, the horizontal axis shows the frequency in "GHz" and the vertical axis shows the loss in "dB".

[0194] exist Figure 15 The diagram shows the loss curve L-ref calculated based on the optimized parameters when the frequency is varied from 1.5 GHz to 2.7 GHz. The losses Lr1, Lr2, Lr3, and Lr4 on the loss curve Lref are the losses at frequencies of 1.7 GHz, 2.1 GHz, 2.3 GHz, and 2.7 GHz, respectively.

[0195] Thus, in power amplifier circuit 90, the loss becomes below -0.37dB and above -0.56dB in the frequency range of 1.7GHz to 2.7GHz, compared to the loss in power amplifier circuit 11 (see reference). Figure 3 The losses increase compared to the previous values. In the power amplifier circuit 90, especially at the high frequency of 2.7 GHz, the losses increase.

[0196] Right now, Figure 1 Compared to interstage matching circuit 901, the interstage matching circuit 301 shown can effectively suppress losses in the frequency range of 1.7 GHz to 2.7 GHz.

[0197] [Ninth Implementation]

[0198] The power amplifier circuit 19 according to the ninth embodiment will be described. Figure 16 This is a circuit diagram of the power amplifier circuit according to the ninth embodiment of the present invention. Figure 16 As shown, the power amplifier circuit 19 according to the ninth embodiment differs from the power amplifier circuit 11 according to the first embodiment in that it includes an inter-stage matching circuit 1301 instead of an inter-stage matching circuit 301. The inter-stage matching circuit 1301 and... Figure 1 Compared to the interstage matching circuit 301 shown, the current sensing wiring section 1351 is included instead of the current sensing wiring section 351.

[0199] The current-sensing wiring section 1351 includes a power supply node 315 and windings 313 and 314. Winding 313 in the current-sensing wiring section 1351 has a first end connected to the power supply node 315 and a second end connected to node 319, and is electromagnetically coupled to winding 311. Winding 314 has a first end connected to the power supply node 315 and a second end connected to node 318, and is electromagnetically coupled to winding 312. Transformers 316 and 317 constitute a Guanella-type matching circuit. Guanella-type matching circuits are described, for example, in Patent Documents 2 and 3.

[0200] For example, when the current I1 increases from the first end to the second end of winding 311, the current I4 increases from the second end to the first end of winding 312. At this time, in winding 313, through electromagnetic field coupling with winding 311, a current I3 is induced from the second end to the first end of winding 313. Furthermore, in winding 314, through electromagnetic field coupling with winding 312, a current I2 is induced from the first end to the second end of winding 314.

[0201] Currents I1 and I2 flow into node 318, therefore, according to Kirchhoff's first law, and with power amplifier circuit 11 (refer to...) Figure 1 Similarly, in the case of power amplifier circuit 11, current (I1+I2) flows from node 318 toward amplifier 501. In addition, currents I3 and I4 flow out from node 319, so according to Kirchhoff's first law, current (I3+I4) flows from amplifier 521 toward node 319.

[0202] Current I4 has approximately the same magnitude as current I1. Current I3 has approximately the same magnitude as current I2. Therefore, in the case where the interstage matching circuit 1301 in power amplifier circuit 19 does not include capacitor 310, the above equation (1) holds, similar to the case in power amplifier circuit 11.

[0203] That is, by appropriately setting the mutual inductance of transformers 316 and 317, and changing the ratio of the magnitudes of currents I1 and I3, as well as the ratio of the magnitudes of currents I2 and I4, the impedances ZL201 and ZL221 can be adjusted to correspond to the output load impedance.

[0204] Additionally, in power amplifier circuit 13 (refer to...) Figure 7 ), power amplifier circuit 15 (refer to) Figure 9 ) or power amplifier circuit 17 (refer to) Figure 11Alternatively, the structure can be as follows: a current sensing wiring section 1351 can be provided to replace the current sensing wiring section 351.

[0205] [layout]

[0206] An example of the layout of transformers 316 and 317 in the semiconductor device 1 according to the ninth embodiment will be described.

[0207] Figure 17 This is a perspective view schematically illustrating a first example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention. In the first example, winding 311 in transformer 316 and winding 312 in transformer 317 are mainly formed on surface P2. Winding 311 has winding portions 311ba and 311bb, and connecting portions 311bc formed on surface P2. Connecting portion 311bc includes a cross portion 311bca, and interlayer vias 311bcb and 311bcc formed on an upper surface (not shown) located above surface P2. Winding portion 311ba has a first end and a second end connected to output terminal 201b, and is wound counterclockwise around the z1 axis in the z1 direction ccw from the first end to the second end, while approaching the z1 axis. The winding portion 311bb has a first end and a second end that become a node 318. The winding portion 311ba is wound clockwise (cw) from the first end to the second end along the x-axis side. The connecting portion 311bc connects the second end of the winding portion 311ba and the second end of the winding portion 311bb, preventing short circuits at the intersection with the winding portion 311ba. Specifically, by forming the intersection portion 311bca on an upper surface different from the surface P2 on which the winding portion 311ba is formed, short circuits between the intersection portion 311bca and the winding portion 311ba can be prevented. The two ends of the intersection portion 311bca are connected to the second ends of the winding portion 311ba and the second end of the winding portion 311bb, respectively, through interlayer vias 311bcb and 311bcc. The winding portions 311ba and 311bb, along with the connecting portion 311bc, are wound approximately twice around the z1 axis as a whole.

[0208] Winding 312 is located on the x-axis+ side of winding 311. Specifically, winding 312 has winding portions 312ba and 312bb formed on surface P2, and connecting portion 312bc. Connecting portion 312bc includes a cross portion 312bca formed on the upper side surface (not shown), and interlayer vias 312bcb and 312bcc. Winding portion 312ba has a first end and a second end that become node 319, and is wound counterclockwise around the z2 axis from the first end to the second end, while approaching the z2 axis. Winding portion 312bb has a first end and a second end that are connected to output terminal 221b, and is wound clockwise from the first end to the second end on the x-axis-side of winding portion 312ba in the cw direction. The connecting portion 312bc connects the second ends of the winding portions 312ba and 312bb, preventing short circuits at the intersection with the winding portion 312ba. Specifically, by forming the intersection portion 312bca on an upper surface different from the surface P2 where the winding portion 312ba is formed, short circuits between the intersection portion 312bca and the winding portion 312ba are prevented. The two ends of the intersection portion 312bca are connected to the second ends of the winding portions 312ba and 312bb, respectively, via interlayer vias 312bcb and 312bcc. The winding portions 312ba and 312bb, along with the connecting portion 312bc, are wound approximately twice around the z2 axis as a whole.

[0209] Figure 18 Viewed from above Figure 17 The top view of windings 313 and 314 is shown. Figure 17 as well as Figure 18 As shown, a current-sensing wiring section 1351 is formed on surface P1. When viewed from above surface P1, windings 313 and 314 each have curved portions 313bd and 314bd that bend in opposite directions. Furthermore, when viewed from above surface P1, the line Lb passing through the midpoint MP of nodes 318 and 319 and the power supply node 315 intersects windings 313 and 314 respectively, except for the power supply node 315.

[0210] Specifically, winding 313 has a winding portion 313ba, a connecting portion 313bb, and a connecting portion 313bc, located below winding 311. The winding portion 313ba has a first end and a second end connected to node 319 via the connecting portion 313bc and an interlayer via 301bm. The winding portion 313ba is wound more than 180° and less than 360° clockwise around the z1 axis from the first end to the second end. The winding portion 313ba includes a bent portion 313bd that bends towards the x-axis. The connecting portion 313bb ​​extends substantially parallel to the x-axis, connecting the second end of the winding portion 313ba to the power supply node 315.

[0211] Winding 314 has a winding portion 314ba, connecting portions 314bb and 314bc, located below winding 312. The winding portion 314ba has a first end and a second end connected to node 318 via connecting portion 314bc and interlayer via 301bp. The winding portion 314ba is wound more than 180° and less than 360° counterclockwise around the z2 axis from the first end to the second end. The winding portion 314ba includes a bent portion 314bd that bends towards the x-axis + side. Connecting portion 314bb connects the second end of winding portion 314ba to power supply node 315. When viewed as a single unit, connecting portions 314bb and 314bb have a straight shape extending in the x-axis direction.

[0212] When viewed from above on the opposite side P1, the connecting part 313bc has an L-shape and intersects line Lb at point Pb1. When viewed from above on the opposite side P1, the connecting part 314bc has a straight line shape extending in the x-axis direction and intersects line Lb at point Pb2.

[0213] A second example of the layout of transformers 316 and 317 in the semiconductor device 1 according to the ninth embodiment will be described.

[0214] Figure 19 This is a perspective view schematically illustrating a second example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention. Figure 19 As shown, in the second example, the winding 311 in the transformer 316 has a winding portion 311ca and is formed on surface P2. The winding portion 311ca has a first end connected to the output terminal 201b and a second end that becomes a node 318, and is wound approximately 180° clockwise around the z1 axis from the first end to the second end in the cw direction.

[0215] The winding 312 in the transformer 317 has a winding portion 312ca and is formed on surface P2. The winding portion 312ca is located on the x-axis side of the winding portion 311ca. The winding portion 312ca has a first end connected to the output terminal 221b and a second end that becomes a node 319, and is wound approximately 180° counterclockwise around the z1 axis from the first end to the second end. The winding portions 311ca and 312ca are integrally formed into a ring.

[0216] Figure 20 Viewed from above Figure 19 The top view of windings 313 and 314 is shown. Figure 19 as well as Figure 20As shown, a current-sensing wiring section 1351 is formed on surface P1. When viewed from above surface P1, windings 313 and 314 each have curved portions 313cd and 314cd that bend in opposite directions. Furthermore, when viewed from above surface P1, the line Lc passing through the midpoint MP of nodes 318 and 319 and the power supply node 315 intersects windings 313 and 314 respectively, except for the power supply node 315.

[0217] Specifically, winding 313 is located below winding 311 and has a winding portion 313ca, 313cc, and a connecting portion 313cb. The winding portion 313ca has a first end and a second end that become a power supply node 315, and is wound more than 90° and less than 180° clockwise around the z1 axis from the first end to the second end. The winding portion 313ca includes a bent portion 313cd that bends towards the x-axis.

[0218] The winding portion 313cc is located further away from the z1 axis than the winding portion 313ca, and has a first end and a second end connected to the node 319 via the interlayer via 301cmm. The winding portion 313cc is wound counterclockwise around the z1 axis from the first end to the second end. The winding portion 313cc intersects the line Lc at point Pb1.

[0219] The connecting portion 313cb extends in a direction away from the z1 axis and connects the second end of the winding portion 313ca and the second end of the winding portion 313cc. The winding portions 313ca, 313cc and the connecting portion 313cb are wound as a whole around the z1 axis for more than 360° and less than 450°.

[0220] Winding 314 is located below winding 312 and has a winding portion 314ca. Winding portion 314ca has a first end continuous with the first end of winding portion 313ca and serving as a power supply node 315, and a second end connected to node 318 via interlayer via 301cp. Winding portion 314ca is wound counterclockwise around the z1 axis in a direction ccw for more than 180° and less than 270° from the first end to the second end. Winding portion 314ca includes a curved portion 314cd that bends towards the x-axis + side. Winding portions 313ca and 314ca together form a loop. Winding portion 314ca intersects line Lc at point Pb2.

[0221] A third example of the layout of transformers 316 and 317 in the semiconductor device 1 according to the ninth embodiment will be described.

[0222] Figure 21 This is a perspective view schematically showing a third example of the layout of transformers 316 and 317 according to the ninth embodiment of the present invention. Figure 22 Viewed from aboveFigure 21 The top view of transformers 316 and 317 is shown. Figure 21 as well as Figure 22 As shown, in the third example, windings 311 and 312 and current sensing wiring portion 1351 are mainly formed on surface P1.

[0223] The winding 311 in the transformer 316 has a winding portion 311da formed on the surface P1. The winding portion 311da has a first end connected to the output terminal 201b and a second end that becomes a node 318, and is wound approximately 180° clockwise around the z1 axis from the first end to the second end.

[0224] The winding 312 in the transformer 317 is located on the x-axis side of the winding 311 and has a winding portion 312da formed on the surface P1. The winding portion 312da has a first end connected to the output terminal 221b and a second end that becomes a node 319, and is wound approximately 180° counterclockwise around the z1 axis from the first end to the second end. The winding portions 311da and 312da are formed as a whole into a loop. When viewed from above the surface P1, the winding portion 311da has a shape that is approximately symmetrical with respect to the line Ld passing through the midpoint MP of nodes 318 and 319 and the power supply node 315.

[0225] When viewed from above on the opposite side P1, windings 313 and 314 each have curved portions 313dd and 314dd that bend in opposite directions. Furthermore, when viewed from above on the opposite side P1, line Ld intersects windings 313 and 314 respectively, except for the power supply node 315.

[0226] Specifically, winding 314 is located on the x-axis+ side of winding 312, and has a winding portion 314da formed on surface P1 and a connecting portion 314db formed on surface P1. The winding portion 314da has a first end and a second end that become a power supply node 315, and is wound from the first end to the second end in a counterclockwise direction ccw around the z1 axis for more than 90° and less than 180°. The winding portion 314da includes a bent portion 314dd that bends towards the x-axis-side. The connecting portion 314db extends towards the x-axis+ side and the y-axis-side, connecting the second end of the winding portion 314da and the second end of the winding portion 311da, i.e., node 318.

[0227] Winding 313 is located on the x-axis side of winding 311 and has a winding portion 313da and a connecting portion 313db formed on surface P1. Connecting portion 313db includes a cross portion 313dba, interlayer vias 313dbb, and 313dbc formed on an upper surface (not shown) above surface P1. Winding portion 313da has a first end and a second end that are continuous with the first end of winding portion 314da and form a power supply node 315. Winding portion 313da is wound more than 90° and less than 180° clockwise around the z1 axis from the first end to the second end. Winding portion 313da includes a bent portion 313dd that bends towards the x-axis + side. When viewed from above P1, the connecting portion 313db extends towards the x-axis and y-axis sides, connecting the second end of the winding portion 313da and the second end of the winding portion 312da, i.e., node 319, so that there is no short circuit at the intersection with the connecting portion 314db. Specifically, by forming the intersection portion 313dba on an upper surface different from the surface P1 where the connecting portion 314db is formed, short circuits between the intersection portion 313dba and the connecting portion 314db can be prevented. The two ends of the intersection portion 313dba are connected to the second ends of the winding portion 313da and the second end of the winding portion 312da, respectively, through interlayer vias 313dbb and 313dbc.

[0228] When viewed from above on the opposite side P1, the winding portion 313da and the connecting portion 313db have shapes that are approximately symmetrical with respect to line Ld to the winding portion 314da and the connecting portion 314db. When viewed from above on the opposite side P1, the connecting portion 313db intersects line Ld at point Pb1. When viewed from above on the opposite side P1, the connecting portion 314db intersects line Lb at point Pb2.

[0229] [10th Implementation]

[0230] The power amplifier circuit 20 according to the 10th embodiment will be described. Figure 23 This is a circuit diagram of the power amplifier circuit according to the tenth embodiment of the present invention. Figure 23 As shown, the power amplifier circuit 20 according to the 10th embodiment differs from the power amplifier circuit 12 according to the 2nd embodiment in that it includes an inter-stage matching circuit 1401 instead of an inter-stage matching circuit 401. The inter-stage matching circuit 1401 and... Figure 6 Compared to the interstage matching circuit 401 shown, the current sensing wiring section 1451 is included instead of the current sensing wiring section 451.

[0231] The current-sensing wiring section 1451 includes a power supply node 415 and transmission lines 413 and 414. Transmission line 413 in the current-sensing wiring section 1451 has a first terminal connected to the power supply node 415 and a second terminal connected to a node 419, and is electromagnetically coupled to transmission line 411. Transmission line 414 has a first terminal connected to the power supply node 415 and a second terminal connected to a node 418, and is electromagnetically coupled to transmission line 412. Coupling lines 416 and 417 constitute a Guanella-type matching circuit.

[0232] Additionally, in power amplifier circuit 14 (refer to...) Figure 8 ), power amplifier circuit 16 (refer to) Figure 10 ) or power amplifier circuit 18 (refer to) Figure 12 Alternatively, the structure can be as follows: a current sensing wiring section 1451 can be provided instead of a current sensing wiring section 451.

[0233] [11th Implementation]

[0234] The power amplifier circuit 21 according to the 11th embodiment will be described. Figure 24 This is a circuit diagram of the power amplifier circuit according to the 11th embodiment of the present invention. Figure 25 This is a circuit diagram of the interstage matching circuits 2301F and 2301S according to the 11th embodiment of the present invention. Figure 24 as well as Figure 25 As shown, the power amplifier circuit 21 according to the 11th embodiment differs from the power amplifier circuit 11 according to the 1st embodiment in that it has two sets of components: an inter-stage matching circuit and a differential pair of output stages.

[0235] Power amplifier circuit 21 and Figure 1 Compared to the power amplifier circuit 11 shown, this circuit includes group 701F (Group 1) to replace the interstage matching circuit 301 and amplifiers 501 and 521, and also includes group 701S (Group 2), bias circuits 231 and 531, and inductors 206 and 226. Group 701F includes interstage matching circuit 2301F, inductors 506F and 526F, and amplifiers 501F and 521F. Group 701S includes interstage matching circuit 2301S, inductors 506S and 526S, and amplifiers 501S and 521S.

[0236] At the output terminal 201b of amplifier 201, the power supply voltage VCC3 of amplifier 201 is supplied through inductor 206. At the output terminal 221b of amplifier 221, the power supply voltage VCC3 of amplifier 221 is supplied through inductor 226. The bias circuit 231 supplies bias voltage VBB5 to the bases of transistors 202 and 222 respectively through resistors 204 and 224.

[0237] The interstage matching circuit 2301F includes transformers 316F and 317F. If amplified signals RF3 and RF4 are supplied from amplifiers 201 and 221 respectively, then amplified signals RF7 and RF8 are output to amplifiers 501F and 521F respectively (see reference). Figure 25 ).

[0238] In the transformer 316F of the interstage matching circuit 2301F, winding 311F has a first terminal connected to the output terminal 201b of amplifier 201 via node 354 and a second terminal connected to node 318F. Winding 313F has a first terminal connected to the grounded ground node 353F (low impedance node) and a second terminal connected to node 318F, and is electromagnetically coupled to winding 311F.

[0239] In the transformer 317F of the interstage matching circuit 2301F, winding 312F has a first terminal connected to the output terminal 221b of amplifier 221 via node 355 and a second terminal connected to node 319F. Winding 314F has a first terminal connected to ground node 353F and a second terminal connected to node 319F, and is electromagnetically coupled to winding 312F.

[0240] The current sensing wiring section 352F is composed of grounding node 353F, windings 313F and 314F.

[0241] Interstage matching circuit 2301S has the same structure as interstage matching circuit 2301F. If amplified signals RF3 and RF4 are supplied from amplifiers 201 and 221 respectively, then amplified signals RF9 and RF10 are output to amplifiers 501S and 521S respectively (see reference). Figure 25 ).

[0242] The transformer 316S in the interstage matching circuit 2301S has the same structure as the transformer 316F. In the transformer 316S, the first end of the winding 311S is connected to the output terminal 201b of the amplifier 201 via node 354. The transformer 317S in the interstage matching circuit 2301S has the same structure as the transformer 317F. In the transformer 317S, the first end of the winding 312S is connected to the output terminal 221b of the amplifier 221 via node 355.

[0243] Amplifier 501F has the same characteristics as amplifier 501 (reference). Figure 1 With the same structure, if the amplified signal RF7, which has passed through the interstage matching circuit 2301F, is supplied to the input terminal 501a, then the amplified signal RF11, which amplifies the amplified signal RF7, is output from the output terminal 501b (refer to...). Figure 24 ).

[0244] The input terminal 501a of amplifier 501F is connected to node 318F in the interstage matching circuit 2301F. The output terminal 501b of amplifier 501F is connected to capacitor 551 (see reference) via node 527. Figure 1 The first terminal of the amplifier 501F is connected. At the output terminal 501b of the amplifier 501F, the power supply voltage VCC4 of the amplifier 501F is supplied through the inductor 506F. At the base of the transistor 502 in the amplifier 501F, the bias voltage VBB6 is supplied from the bias circuit 531 through the resistor element 504.

[0245] Amplifier 521F has the same characteristics as amplifier 521 (reference). Figure 1 With the same structure, if the amplified signal RF8, which has passed through the interstage matching circuit 2301F, is supplied to the input terminal 521a, then the amplified signal RF12, which amplifies the amplified signal RF8, is output from the output terminal 521b.

[0246] The input terminal 521a of amplifier 521F is connected to node 319F in the interstage matching circuit 2301F. The output terminal 521b of amplifier 521F is connected to capacitor 551 (see reference 521F) via node 528. Figure 1 The second terminal of the amplifier 521F is connected. At the output terminal 521b of the amplifier 521F, the power supply voltage VCC4 of the amplifier 521F is supplied through the inductor 526F. At the base of the transistor 522 in the amplifier 521F, the bias voltage VBB6 is supplied from the bias circuit 531 through the resistor element 524.

[0247] Amplifier 501S is, for example, the same amplifier as amplifier 501F. If the amplified signal RF9, which has passed through the interstage matching circuit 2301S, is supplied to the input terminal 501a, then the amplified signal RF13, which amplifies the amplified signal RF9, is output from the output terminal 501b.

[0248] The input terminal 501a of amplifier 501S is connected to node 318S in interstage matching circuit 2301S. The output terminal 501b of amplifier 501S is connected to capacitor 551 (see reference 527) via node 527. Figure 1The first terminal of the amplifier 501S is connected. At the output terminal 501b of the amplifier 501S, the power supply voltage VCC4 of the amplifier 501S is supplied through the inductor 506S. At the base of the transistor 502 in the amplifier 501S, the bias voltage VBB6 is supplied from the bias circuit 531 through the resistor element 504.

[0249] Amplifier 521S is, for example, the same amplifier as amplifier 521F. If the amplified signal RF10, which has passed through the interstage matching circuit 2301S, is supplied to the input terminal 521a, then the amplified signal RF14, which amplifies the amplified signal RF10, is output from the output terminal 521b.

[0250] The input terminal 521a of amplifier 521S is connected to node 319S in interstage matching circuit 2301S. The output terminal 521b of amplifier 521S is connected to capacitor 551 (see reference 521S) via node 528. Figure 1 The second terminal of the amplifier 521S is connected. At the output terminal 521b of the amplifier 521S, the power supply voltage VCC4 of the amplifier 521S is supplied through the inductor 526S. At the base of the transistor 522 in the amplifier 521S, the bias voltage VBB6 is supplied from the bias circuit 531 through the resistor element 524.

[0251] [Effects]

[0252] For example, in increasing the power amplifier circuit 11 (refer to...) Figure 1 When the output of the amplifier is reduced, the input impedance of amplifiers 501 and 521 decreases. Specifically, the impedances ZS501 and ZS521 in the power amplifier circuit 11 decrease.

[0253] However, when the impedances ZS501 and ZS521 are small, the frequency range in which the impedances of amplifiers 201 and 221 can be well matched with those of amplifiers 501 and 521 through the interstage matching circuit 301 may become narrower.

[0254] In response to this, Figure 24 as well as Figure 25 In the power amplifier circuit 21 shown, even if the impedances ZS501F and ZS501S are set to approximately twice the impedance ZS501, and the impedances ZS521F and ZS521S are set to approximately twice the impedance ZS521, the same power amplifier circuit can still be obtained. Figure 1 The output of the power amplifier circuit 11 shown is approximately the same.

[0255] Here, impedance ZS501F is the impedance observed when looking at output terminal 32 from input terminal 501a of amplifier 501F. Impedance ZS521F is the impedance observed when looking at output terminal 32 from input terminal 521a of amplifier 521F. Impedance ZS501S is the impedance observed when looking at output terminal 32 from input terminal 501a of amplifier 501S. Impedance ZS521S is the impedance observed when looking at output terminal 32 from input terminal 521a of amplifier 521S.

[0256] That is, by having a structure with groups 701S and 701F, the output of power amplifier circuit 21 is set to be the same as that of power amplifier circuit 11 (refer to...). Figure 1 With roughly the same output, the input impedance of amplifiers 501F, 501S, 521F, and 521S can be increased. Thus, the interstage matching circuits 2301F and 2301S can effectively match the impedance of amplifiers 201 and 221 with amplifiers 501F, 501S, 521F, and 521S over a wide frequency range.

[0257] [layout]

[0258] Figure 26 This is a diagram illustrating a first example of the layout of an amplifier for a power stage according to the 11th embodiment of the present invention. Figure 26 As shown, amplifiers 501F, 501S, 521F and 521S are disposed on a plane (e.g., plane P1 or P2) that is approximately parallel to the xy plane of the semiconductor device 1.

[0259] exist Figure 26 In this configuration, amplifiers 501F, 501S, 521F, and 521S are arranged sequentially at equal intervals along an x1 axis that is approximately parallel to the x-axis. The distance between the amplifiers is Da. The emitters of the transistors in each of amplifiers 501F, 501S, 521F, and 521S are ideally grounded without passing through parasitic inductors (see reference). Figure 24 However, their emitters are actually grounded through parasitic inductors.

[0260] Specifically, as shown in the equivalent circuit diagrams of each amplifier, the emitter of transistor 502 in amplifiers 501F and 501S is grounded, for example, through parasitic inductor 502p. The emitter of transistor 522 in amplifiers 521S and 521F is grounded, for example, through parasitic inductor 522p, which has approximately the same inductance as parasitic inductor 502p.

[0261] Focusing on the differential pair Pr1 consisting of amplifiers 501S and 521F, the emitter of transistor 502 in amplifier 501S is connected to ground node N1, which is connected to virtual ground, via parasitic inductor 502qs. The emitter of transistor 522 in amplifier 521F is connected to ground node N1 via parasitic inductor 522qs.

[0262] In the differential pair Pr1, the distance Da between amplifiers 501S and 521F is relatively short, thus the inductance of parasitic inductors 502qs and 522qs is sufficiently small. That is, the inductance of the emitter of transistor 502 in amplifier 501S and the emitter of transistor 522 in amplifier 521F is reduced.

[0263] On the other hand, focusing on the differential pair Pr2 consisting of amplifiers 501F and 521S, the emitter of transistor 502 in amplifier 501F is connected to ground node N1 via parasitic inductor 502q. Furthermore, the emitter of transistor 522 in amplifier 521S is connected to ground node N1 via parasitic inductor 522q.

[0264] In differential pair Pr2, the distance between amplifiers 501F and 521S is 3Da, which is three times Da. Therefore, the inductances of parasitic inductors 502q and 522q are, for example, larger than the inductances of parasitic inductors 502qs and 522qs, respectively. Consequently, in differential pair Pr2, due to the larger inductances of parasitic inductors 502q and 522q, the increase in gain and output caused by setting two differential pairs in the power stage may sometimes be weakened.

[0265] Figure 27 This is a diagram illustrating an example of the layout of the amplifier in the power stage according to the 11th embodiment of the present invention. Figure 27 As shown, amplifiers 501F, 521F, 501S and 521S are disposed on a plane (e.g., plane P1 or P2) that is approximately parallel to the xy plane of the semiconductor device 1.

[0266] exist Figure 27 In this arrangement, amplifiers 501F, 521F, 501S, and 521S are arranged sequentially along the x1 axis, for example, at approximately equal intervals. Here, the distance between the amplifiers is Da. The emitters of the transistors in each of amplifiers 501F, 521F, 501S, and 521S are ideally grounded without passing through parasitic inductors (see reference). Figure 1 However, their emitters are actually grounded through parasitic inductors.

[0267] Specifically, the emitter of transistor 502 in amplifiers 501F and 501S is connected to... Figure 26Similarly, as shown, it is grounded via parasitic inductor 502p. The emitter of transistor 522 in amplifiers 521F and 521S is connected to... Figure 26 Similarly, as shown, it is grounded through parasitic inductor 522p.

[0268] Focusing on the differential pair Pa1 consisting of amplifiers 501S and 521F, the emitter of transistor 502 in amplifier 501S is connected to ground node N1 via parasitic inductor 502qs. The emitter of transistor 522 in amplifier 521F is connected to ground node N1 via parasitic inductor 522qs.

[0269] In the case of the differential pair Pa2 consisting of amplifiers 501F and 521F, similar to the differential pair Pal, the emitter of transistor 502 in amplifier 501F is connected to ground node N1 via parasitic inductor 502qs. Furthermore, the emitter of transistor 522 in amplifier 521F is connected to ground node N1 via parasitic inductor 522qs.

[0270] In differential pairs Pa1 and Pa2, the distance between the amplifiers is Da, thus the inductance of parasitic inductors 502qs and 522qs is sufficiently small. This reduces the inductance of the emitters of the transistors in amplifiers 501F, 521F, 501S, and 521S. Therefore, the increased gain and output resulting from setting up two differential pairs in the power stage can be fully utilized.

[0271] Furthermore, the wiring between the interstage matching circuits 2301F and 2301S and the amplifiers 501F, 521F, 501S, and 521S can be configured without crossing, thus simplifying the symmetrical configuration of these wirings. Consequently, the positive-side input / output characteristics and the negative-side input / output characteristics can be made close to equal gain and equal phase, thereby enabling the power amplifier circuit 21 to approximate an ideal differential amplifier circuit and suppressing the deterioration of distortion characteristics.

[0272] [12th Implementation]

[0273] The interstage matching circuit according to the 12th embodiment will be described. Figure 28 This is a circuit diagram of the interstage matching circuits 2401F and 2401S according to the 12th embodiment of the present invention. Figure 28 As shown, the difference between the interstage matching circuits 2401F and 2401S in the 12th embodiment and the interstage matching circuits 2301F and 2301S in the 11th embodiment is that they are constructed by transmission lines instead of windings.

[0274] The interstage matching circuit 2401F includes coupling lines 416F and 417F. If amplified signals RF3 and RF4 are supplied from amplifiers 201 and 221 respectively, then amplified signals RF7 and RF8 are output to amplifiers 501F and 521F respectively.

[0275] In the coupling line 416F of the interstage matching circuit 2401F, the transmission line 411F has a first terminal connected to the output terminal 201b of the amplifier 201 via node 354 and a second terminal connected to node 418F. The transmission line 413F has a first terminal connected to the grounded ground node 453F (low impedance node) and a second terminal connected to node 418F, and is electromagnetically coupled to the transmission line 411F.

[0276] In the coupling line 417F of the interstage matching circuit 2401F, transmission line 412F has a first terminal connected to the output terminal 221b of amplifier 221 via node 355 and a second terminal connected to node 419F. Transmission line 414F has a first terminal connected to ground node 453F and a second terminal connected to node 419F, and is electromagnetically coupled to transmission line 412F.

[0277] Nodes 418F and 419F in the interstage matching circuit 2401F are connected to the input terminals 501a of amplifier 501F and 521a of amplifier 521F, respectively.

[0278] The current sensing wiring section 452F is composed of grounding node 453F, transmission lines 413F and 414F.

[0279] The interstage matching circuit 2401S has the same structure as the interstage matching circuit 2401F. If amplified signals RF3 and RF4 are supplied from amplifiers 201 and 221 respectively, then amplified signals RF9 and RF10 are output to amplifiers 501S and 521S respectively.

[0280] The coupling line 416S in the interstage matching circuit 2401S has the same structure as the coupling line 416F. In the coupling line 416S, the first end of the transmission line 411S is connected to the output terminal 201b of the amplifier 201 via node 354. The coupling line 417S in the interstage matching circuit 2401S has the same structure as the coupling line 417F. In the coupling line 417S, the first end of the transmission line 412S is connected to the output terminal 221b of the amplifier 221 via node 355.

[0281] Nodes 418S and 419S in the interstage matching circuit 2401S are connected to the input terminals 501a of amplifier 501S and 521a of amplifier 521S, respectively.

[0282] [13th Implementation]

[0283] The differential pair of the power stage according to the 13th embodiment will be described. Figure 29 This is a diagram illustrating an example of the layout of the amplifier in the power stage according to the 13th embodiment of the present invention. Figure 29 As shown, the amplifiers 501 and 521 according to the 13th embodiment differ from those according to the 1st embodiment in that they have multiple transistor units.

[0284] Amplifiers 501 and 521 are disposed on a plane (e.g., plane P1 or P2) that is substantially parallel to the xy plane, which is the surface of semiconductor device 1. Amplifiers 501 and 521 are arranged sequentially along the x1 axis.

[0285] Amplifier 501 includes transistor units 50201 to 50212. Each transistor unit 50201 to 50212 includes, for example, a transistor 502, a capacitor 503, and a resistor element 504 (see reference). Figure 1 The transistor units 50201 to 50212 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 501, transistor unit 50201 is located on the - side of the x1 axis, and transistor unit 50212 is located on the + side of the x1 axis.

[0286] Amplifier 521 includes transistor units 52201 to 52212. Each transistor unit 52201 to 52212 includes, for example, a transistor 522, a capacitor 523, and a resistor element 524 (see reference). Figure 1 The transistor units 52201 to 52212 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 521, transistor unit 52201 is located on the - side of the x1 axis, and transistor unit 52212 is located on the + side of the x1 axis.

[0287] Here, the distance between transistor unit 50212 and transistor unit 52201 is Db. The distance between transistor unit 50201 and transistor unit 52212 is Dc, which is greater than Db.

[0288] Although the emitters of the transistors in transistor cells 50201-50212 and 52201-52212 are ideally grounded without passing through a parasitic inductor (see reference). Figure 1 However, their emitters are actually grounded through parasitic inductors.

[0289] Specifically, as shown in the equivalent circuit diagram of each amplifier, the emitter of transistor 502 in transistor units 50201 to 50212 is, for example, with... Figure 26Similarly, as shown, it is grounded via parasitic inductor 502p. The emitter of transistor 522 in transistor cells 52201–52212 is, for example, connected to… Figure 26 Similarly, as shown, it is grounded through parasitic inductor 522p.

[0290] In the case of the differential pair Pr3 consisting of transistor units 50212 and 52201, the emitter of transistor 502 in transistor unit 50212 is connected to ground node N1 through parasitic inductor 502rs. The emitter of transistor 522 in transistor unit 52201 is connected to ground node N1 through parasitic inductor 522rs.

[0291] In the differential pair Pr3, the distance Db between the transistor cells is short, thus the inductance of parasitic inductors 502rs and 522rs is sufficiently small. That is, the inductance of the emitter of transistor 502 in transistor cell 50212 and the emitter of transistor 522 in transistor cell 52201 is reduced.

[0292] On the other hand, focusing on the differential pair Pr4 composed of transistor units 50201 and 52212, the emitter of transistor 502 in transistor unit 50201 is connected to ground node N1 through parasitic inductor 502r. Furthermore, the emitter of transistor 522 in transistor unit 52212 is connected to ground node N1 through parasitic inductor 522r.

[0293] In differential pair Pr4, the distance Dc between transistor cells is longer than the distance Db. Therefore, the inductances of parasitic inductors 502r and 522r are, for example, larger than the inductances of parasitic inductors 502rs and 522rs, respectively. Consequently, due to the larger inductances of parasitic inductors 502r and 522r, the gain and output increase effect caused by setting two differential pairs in the power stage may sometimes be weakened.

[0294] Furthermore, a structure in which the number of transistor units in amplifier 501 and the number of transistor units in amplifier 521 are the same has been described, but it is not limited to this. A structure in which the number of transistor units in amplifier 501 and the number of transistor units in amplifier 521 are different may also be described.

[0295] [14th Implementation]

[0296] The differential pair of the power stage according to the 14th embodiment will be described. Figure 30 This is a diagram illustrating an example of the layout of the amplifier in the power stage according to the 14th embodiment of the present invention. Figure 30As shown, the amplifiers 501F, 501S, 521F and 521S according to the 14th embodiment differ from those according to the 11th embodiment in that they have multiple transistor units.

[0297] Amplifiers 501F, 501S, 521F, and 521S are disposed on a plane (e.g., plane P1 or P2) that is substantially parallel to the xy plane of the semiconductor device 1. Amplifiers 501F, 501S, 521F, and 521S are... Figure 27 Similarly, the arrangement is along the x1 axis.

[0298] Amplifier 501F includes transistor units 50201 to 50206. Amplifier 501S includes transistor units 50207 to 50212. Transistor units 50201 to 50212 have respectively... Figure 29 The transistor units 50201 to 50212 in the amplifier 501 shown have the same structure.

[0299] Transistor units 50201 to 50206 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 501F, transistor unit 50201 is located on the - side of the x1 axis, and transistor unit 50206 is located on the + side of the x1 axis.

[0300] Transistor units 50207 to 50212 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 501S, transistor unit 50207 is located on the - side of the x1 axis, and transistor unit 50212 is located on the + side of the x1 axis.

[0301] Amplifier 521F includes transistor units 52201 to 52206. Amplifier 521S includes transistor units 52207 to 52212. Transistor units 52201 to 52212 have respectively... Figure 29 The transistor units 52201 to 52212 in the amplifier 521 shown have the same structure.

[0302] Transistor units 52201 to 52206 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 521F, transistor unit 52201 is located on the - side of the x1 axis, and transistor unit 52207 is located on the + side of the x1 axis.

[0303] Transistor units 52207 to 52212 are arranged sequentially, for example, at approximately equal intervals, along the x1 axis. That is, in amplifier 521S, transistor unit 52207 is located on the - side of the x1 axis, and transistor unit 52212 is located on the + side of the x1 axis.

[0304] Here, the distance between transistor units 50206 and 52201 and the distance between transistor units 50212 and 52207 are, for example, related to... Figure 29 The distance between transistor units 50212 and 52201 shown is the same, Db. The distance between transistor units 50201 and 52206 and the distance between transistor units 52207 and 52212 are... Figure 29 The distance Dc between transistor cells 50201 and 52212 shown is shorter than Dd.

[0305] The emitter of transistor 502 in transistor units 50201 to 50212 is... Figure 29 Similarly, as shown, it is grounded through parasitic inductor 502p. The emitter of transistor 522 in transistor units 52201–52212 is connected to… Figure 29 Similarly, as shown, it is grounded through parasitic inductor 522p.

[0306] Focusing on the differential pair P3F composed of transistor cells 50206 and 52201, since the distance between the transistor cells is Db, the differential pair P3F has the same characteristics as... Figure 29 The differential pair shown has the same structure as Pr3.

[0307] Specifically, the emitter of transistor 502 in transistor unit 50206 is connected to ground node N1 through parasitic inductor 502rs. The emitter of transistor 522 in transistor unit 52201 is connected to ground node N1 through parasitic inductor 522rs.

[0308] Similarly, when focusing on the differential pair P3S composed of transistor units 50212 and 52207, the differential pair P3S has the same structure as the differential pair P3F.

[0309] Specifically, the emitter of transistor 502 in transistor unit 50212 is connected to ground node N1 through parasitic inductor 502rs. The emitter of transistor 522 in transistor unit 52207 is connected to ground node N1 through parasitic inductor 522rs.

[0310] On the other hand, focusing on the differential pair P4F composed of transistor units 50201 and 52206, the emitter of transistor 502 in transistor unit 50201 is connected to ground node N1 through parasitic inductor 502t. The emitter of transistor 522 in transistor unit 52206 is connected to ground node N1 through parasitic inductor 522t.

[0311] Similarly, focusing on the differential pair P4S consisting of transistor units 50207 and 52212, the emitter of transistor 502 in transistor unit 50207 is connected to ground node N1 via parasitic inductor 502t. The emitter of transistor 522 in transistor unit 52212 is connected to ground node N1 via parasitic inductor 522t.

[0312] In differential pairs P4F and P4S, the distance Dd between transistor units is shorter than the distance Dc between transistor units in differential pair Pr4. Therefore, the inductance of parasitic inductor 502t is smaller than that of parasitic inductor 502r. Similarly, the inductance of parasitic inductor 522t is smaller than that of parasitic inductor 522r. That is, in differential pairs P4F and P4S, the inductance parasitic on the emitters of each transistor is reduced. As a result, the increased gain and output caused by setting multiple transistor units in each amplifier of the power stage can be fully utilized.

[0313] Furthermore, the wiring between the interstage matching circuits 2301F and 2301S and the transistor units in amplifiers 501F, 521F, 501S, and 521S can be configured without crossing, thus allowing these wirings to be easily configured symmetrically. Consequently, the positive-side input / output characteristics and negative-side input / output characteristics can be made close to equal gain and equal phase, thus enabling the power amplifier circuit 21 to approximate an ideal differential amplifier circuit and suppressing the deterioration of distortion characteristics.

[0314] Furthermore, the structures of amplifiers 501F, 521F, 501S, and 521S, each containing 6 transistor units, have been described, but are not limited to this. Amplifiers 501F, 521F, 501S, and 521S may also have structures containing 2 or more but less than 5, or 7 or more transistor units.

[0315] Furthermore, the structures in which amplifiers 501F, 521F, 501S, and 521S each contain the same number of transistor units have been described, but this is not a limitation. It is also possible for amplifiers 501F, 521F, 501S, and 521S to contain different numbers of transistor units.

[0316] Furthermore, in the power amplifier circuit 11 of this embodiment, the structure of the interstage matching circuit 301 including the capacitor 310 has been described, but it is also possible for the interstage matching circuit 301 not to include the capacitor 310. The same applies to the power amplifier circuits 12, 13, 14, 15, 16, 17, and 18.

[0317] Furthermore, the structure of the power amplifier circuit 21 in this embodiment, comprising a first group of amplifiers 501F and 521F and interstage matching circuit 2301F, and a second group of amplifiers 501S and 521S and interstage matching circuit 2301S, has been described, but it is not limited thereto. The power amplifier circuit 21 may also have a structure comprising three or more groups, namely, groups of amplifiers 501F and 521F and interstage matching circuit 2301F.

[0318] The exemplary embodiments of the present invention have been described above. The power amplifier circuit includes: amplifier 201, which receives a signal RF1 distributed from the input signal RFin and has an output terminal 201b that outputs an amplified signal RF3 that amplifies the signal RF1; amplifier 221, which receives a signal RF2 distributed from the input signal RFin and having a different phase from the signal RF1, and has an output terminal 221b that outputs an amplified signal RF4 that amplifies the signal RF2; amplifier 501, which has an input terminal 501a for receiving the amplified signal RF3, amplifies the amplified signal RF3, and outputs an amplified signal RF5; amplifier 521, which has an input terminal 521a for receiving the amplified signal RF4, amplifies the amplified signal RF4, and outputs an amplified signal RF6; and an interstage matching circuit that allows the amplified signals RF3 and RF4 to pass between amplifiers 201 and 221 and between amplifiers 501 and 521. The interstage matching circuit includes: a first wiring having a first terminal connected to the output terminal 201b of amplifier 201 and a second terminal connected to the input terminal 501a of amplifier 501; a second wiring having a first terminal connected to the output terminal 221b of amplifier 221 and a second terminal connected to the input terminal 521a of amplifier 521; and a current-sensing wiring section. The current-sensing wiring section has a low-impedance node, a third wiring connected to the low-impedance node and electromagnetically coupled to the first wiring, and a fourth wiring connected to the low-impedance node and electromagnetically coupled to the second wiring, and is connected between the second terminal of the first wiring and the second terminal of the second wiring.

[0319] Based on this structure, by appropriately setting the mutual inductance in transformers 316 and 317 or the mutual inductance in coupling lines 416 and 417, and by changing the ratio of the magnitude of the current I1 flowing upward from the first end of the first wiring to the second end and the magnitude of the current induced in the third wiring, and the ratio of the magnitude of the current I4 flowing upward from the second end of the second wiring to the first end and the magnitude of the current induced in the fourth wiring, the impedance ZL201 when viewed from the output terminal 201b of amplifier 201 can be adjusted to an impedance corresponding to the output load impedance of amplifier 201. Thus, impedance matching between differential pairs is possible. Furthermore, for example, when the inductances of the first, second, third, and fourth wirings are each large, the first, second, third, and fourth wirings can match the impedance between differential pairs over a wide frequency range. Therefore, it is possible to provide a power amplifier circuit and semiconductor device that amplifies signals over a wide frequency range while suppressing power loss, in a structure that includes an interstage matching circuit between the amplifier on the input side and the amplifier on the output side.

[0320] Furthermore, in power amplifier circuits 11, 12, 13, 14, 15, 16, 17, and 18, the low-impedance node is connected to the second end of the first wiring via the third wiring and to the second end of the second wiring via the fourth wiring.

[0321] Based on this structure, Ruthroff-type interstage matching circuits 301 and 401 can be implemented such that the combined current (I1+I2) of the current I1 flowing upward from the first end of the first wiring to the second end and the current I2 induced in the third wiring is supplied to amplifier 501, and the current (I3+I4) supplied from amplifier 521 is distributed as the current I4 flowing upward from the second end of the second wiring to the first end and the current I3 induced in the fourth wiring. Furthermore, in Ruthroff-type interstage matching circuits 301 and 401, the first, second, third, and fourth wirings can be arranged on the differential pair side of the power stage without a crossover. This simplifies the symmetrical wiring arrangement from interstage matching circuit 301 or 401 to the differential pair of the power stage, thus enabling a well-balanced differential amplifier circuit with consistent positive and negative input / output characteristics.

[0322] Furthermore, in power amplifier circuits 19 and 20, the low-impedance node is connected to the second end of the second wiring via the third wiring and to the second end of the first wiring via the fourth wiring.

[0323] Based on this structure, the following Guanella-type interstage matching circuits 1301 and 1401 can be implemented, namely, the combined current (I1+I2) of the current I1 flowing upward from the first end of the first wiring to the second end and the current I2 induced in the fourth wiring is supplied to the amplifier 501, and the current (I3+I4) supplied from the amplifier 521 is divided into the current I4 flowing upward from the second end of the second wiring to the first end and the current I3 induced in the third wiring.

[0324] In addition, the power amplifier circuit 21 includes: a first group of amplifiers 501F and 521F and interstage matching circuit 2301F, and a second group of amplifiers 501S and 521S and interstage matching circuit 2301S.

[0325] With this structure, for example, when the output of power amplifier circuit 21 is made to be approximately the same as the output of power amplifier circuit 11, which includes amplifiers 501 and 521 and interstage matching circuits 301 or 401, the input impedance of amplifiers 501F, 501S, 521F, and 521S can be increased. Therefore, the impedance between amplifiers 201 and 221 and amplifiers 501F, 501S, 521F, and 521S can be well matched over a wide frequency range via interstage matching circuits 2301F and 2301S.

[0326] Furthermore, in power amplifier circuits 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 and 21, amplifiers 501, 501F and 501S contain multiple transistors 502.

[0327] With such a structure, for example by arranging multiple transistors 502 in parallel, the input impedance of amplifiers 501, 501F, and 501S can be reduced, thereby increasing the output of the power amplifier circuit.

[0328] Furthermore, in power amplifier circuits 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 and 21, amplifiers 521, 521F and 521S contain multiple transistors 522.

[0329] With such a structure, for example by arranging multiple transistors 522 in parallel, the input impedance of amplifiers 521, 521F, and 521S can be reduced, thereby increasing the output of the power amplifier circuit.

[0330] Furthermore, in power amplifier circuits 11, 12, 13, 14, 15, 16, 17 and 18, interstage matching circuits 301, 302, 303, 304, 401, 402, 403 and 404 further include: a capacitor 310 having a first terminal connected to the output terminal 201b of amplifier 201 and a second terminal connected to the output terminal 221b of amplifier 221.

[0331] According to such a structure, for example, if the inductance of each of the first, second, third and fourth wirings is small, and the frequency range in which the impedance between the differential pairs is well matched is narrowed by only the first, second, third and fourth wirings, the frequency range can also be expanded by the capacitor 310.

[0332] Furthermore, in power amplifier circuits 13 and 14, interstage matching circuits 302 and 402 further include: a winding 321 having a first end and a second end; and a winding 322 having a first end and a second end. The second end of the first wiring and the first end of the second wiring are connected to the first end of the winding 321, and the second end of the winding 321 is connected to the input terminal 501a of the amplifier 501. The second end of the third wiring and the first end of the fourth wiring are connected to the first end of the winding 322, and the second end of the winding 322 is connected to the input terminal 521a of the amplifier 521.

[0333] Based on this structure, the number of stages in the interstage matching circuit can be increased, thus allowing for an increase in the constants of the changing object in the design of interstage matching circuits 302 and 402. This makes it easier to adjust interstage matching circuits 302 and 402.

[0334] Furthermore, in power amplifier circuits 15 and 16, interstage matching circuits 303 and 403 also include: a capacitor 331 having a first end connected to the input terminal 501a of amplifier 501 and a second end connected to the input terminal 521a of amplifier 521.

[0335] Based on this structure, the number of stages in the interstage matching circuit can be increased, thus allowing for an increase in the constant of the changing object in the design of interstage matching circuits 303 and 403. This makes it easier to adjust interstage matching circuits 303 and 403.

[0336] Furthermore, in power amplifier circuits 17 and 18, interstage matching circuits 304 and 404 also include: a winding 341 having a first end connected to the input terminal 501a of amplifier 501 and a second end connected to the input terminal 521a of amplifier 521.

[0337] Based on this structure, the number of stages in the interstage matching circuit can be increased, thus allowing for an increase in the constant of the changing object in the design of interstage matching circuits 304 and 404. This makes it easier to adjust interstage matching circuits 304 and 404.

[0338] Furthermore, in power amplifier circuits 11, 13, 15 and 17, the first wiring, the second wiring, the third wiring and the fourth wiring are windings 311, 312, 313 and 314, respectively.

[0339] With this structure, the width of the first, second, third, and fourth wirings can be reduced and the size can be decreased, while ensuring a larger inductance.

[0340] Furthermore, in power amplifier circuits 12, 14, 16 and 18, the first wiring, the second wiring, the third wiring and the fourth wiring are transmission lines 411, 412, 413 and 414, respectively.

[0341] This structure enables impedance matching between differential pairs over a wider frequency range.

[0342] Furthermore, in semiconductor device 1, current sensing wiring portions 351 and 1351 are formed along surface P1. Moreover, when viewed from above surface P1, windings 313 and 314 have curved portions that bend in a direction away from each other.

[0343] In this way, by forming the current sensing wiring portions 351 and 1351 on surface P, the windings 313 and 314 can be formed compactly. Furthermore, by having the aforementioned curved portions in the windings 313 and 314, a magnetic field can be efficiently generated in the windings 313 and 314. That is, in the interstage matching circuits 301 and 1301, transformers 316 and 317 with good electromagnetic field coupling between the windings can be realized in a compact size.

[0344] Furthermore, in semiconductor device 1, winding 313 is connected between node 318, which is connected to the second end of winding 311 and the input terminal 501a of amplifier 501, and the low-impedance node. Winding 314 is connected between node 319, which is connected to the second end of winding 312 and the input terminal 521a of amplifier 521, and the low-impedance node. Moreover, when viewed from above P1, the line La passing through the midpoint MP of nodes 318 and 319 and the low-impedance node does not intersect with windings 313 and 314 except at the low-impedance node.

[0345] With this structure, windings 313 and 314 can be configured symmetrically or nearly symmetrically, thus suppressing the situation where the positive input / output characteristics and negative input / output characteristics become inconsistent, thereby disrupting the balance of the differential amplifier circuit.

[0346] Furthermore, in semiconductor device 1, when viewed from above on the opposite side P1, windings 313 and 314 are approximately symmetrical with respect to line La.

[0347] This structure simplifies the arrangement of windings 311 and 312 as approximately symmetrical, and also simplifies the wiring of the differential pair from the inter-stage matching circuit 301 to the power stage as approximately symmetrical. In other words, it simplifies the wiring of the differential pair from the driver stage to the power stage as approximately symmetrical. This results in a well-balanced differential amplifier circuit with consistent positive and negative input / output characteristics.

[0348] Furthermore, in semiconductor device 1, winding 313 is connected between node 319, which is connected to the second end of winding 312 and the input terminal 521a of amplifier 521, and a low-impedance node. Winding 314 is connected between node 318, which is connected to the second end of winding 311 and the input terminal 501a of amplifier 501, and a low-impedance node. Moreover, when viewed from above P1, lines Lb, Lc, and Ld passing through the midpoint MP of nodes 318 and 319 and the low-impedance node intersect windings 313 and 314 respectively, except for the low-impedance node.

[0349] Based on this structure, the configuration of windings 313 and 314 in the Guanella-type interstage matching circuits 1301 and 1401 can be realized.

[0350] Furthermore, in semiconductor device 1, 501F in group 701F and amplifier 521F, and amplifiers 501S and 521S in group 701S are arranged sequentially along the x1 axis.

[0351] Based on this structure, it is possible to simply implement a structure in which the wiring from the interstage matching circuit 2301F to the amplifiers 501 and 521F and the wiring from the interstage matching circuit 2301S to the amplifiers 501S and 521S are set to approximately the same length and are approximately symmetrical without the presence of intersections.

[0352] Furthermore, the embodiments described above are intended to facilitate understanding of the present invention and are not intended to limit or interpret the present invention. The present invention can be modified / improved without departing from its spirit, and its equivalents are also included. That is, any product of appropriate design modifications made to the embodiments by those skilled in the art, as long as it possesses the features of the present invention, is also included within the scope of the present invention. For example, the elements, their configurations, materials, conditions, shapes, dimensions, etc., possessed in each embodiment are not limited to the examples shown and can be appropriately modified. Moreover, each embodiment is exemplified, and it is self-evident that partial substitutions or combinations of the structures shown in different embodiments can be made; these are also included within the scope of the present invention as long as they contain the features of the present invention.

Claims

1. A power amplifier circuit, comprising: The first amplifier is input with a first signal distributed from the input signal and has an output terminal that outputs a first amplified signal that amplifies the first signal; The second amplifier is input to a second signal, which is distributed from the input signal and has a phase different from that of the first signal, and has an output terminal that outputs a second amplified signal that amplifies the second signal; The third amplifier has an input terminal into which the first amplified signal is input, amplifies the first amplified signal, and outputs the third amplified signal; The fourth amplifier has an input terminal into which the second amplified signal is input, amplifies the second amplified signal, and outputs the fourth amplified signal; as well as A matching circuit, located between the first amplifier and the second amplifier, and between the third amplifier and the fourth amplifier, allows the first amplified signal and the second amplified signal to pass through. The matching circuit includes: The first wiring has a first end connected to the output terminal of the first amplifier and a second end connected to the input terminal of the third amplifier; The second wiring has a first end connected to the output terminal of the second amplifier and a second end connected to the input terminal of the fourth amplifier; as well as Current sensing wiring section The current sensing wiring section has a low-impedance node, a third wiring connected to the low-impedance node and electromagnetically coupled to the first wiring, and a fourth wiring connected to the low-impedance node and electromagnetically coupled to the second wiring, and is connected between the second end of the first wiring and the second end of the second wiring.

2. The power amplifier circuit according to claim 1, wherein, The low-impedance node is connected to the second end of the first wiring via the third wiring and to the second end of the second wiring via the fourth wiring.

3. The power amplifier circuit according to claim 1, wherein, The low-impedance node is connected to the second end of the second wiring via the third wiring and to the second end of the first wiring via the fourth wiring.

4. The power amplifier circuit according to any one of claims 1 to 3, wherein, It has one or more groups connected in parallel, the group including the third amplifier, the fourth amplifier and the matching circuit.

5. The power amplifier circuit according to any one of claims 1 to 3, wherein, The third amplifier contains multiple amplification elements.

6. The power amplifier circuit according to any one of claims 1 to 3, wherein, The fourth amplifier contains multiple amplification elements.

7. The power amplifier circuit according to any one of claims 1 to 3, wherein, The matching circuit further includes: a first capacitor having a first end connected to the output terminal of the first amplifier and a second end connected to the output terminal of the second amplifier.

8. The power amplifier circuit according to any one of claims 1 to 3, wherein, The matching circuit further includes: a first inductor having a first terminal and a second terminal; and a second inductor having a first terminal and a second terminal. The second end of the first wiring is connected to the first end of the first inductor. The second terminal of the first inductor is connected to the input terminal of the third amplifier. The second end of the third wiring is connected to the first end of the second inductor. The second terminal of the second inductor is connected to the input terminal of the fourth amplifier.

9. The power amplifier circuit according to any one of claims 1 to 3, wherein, The matching circuit also has: The second capacitor has a first terminal connected to the input terminal of the third amplifier and a second terminal connected to the input terminal of the fourth amplifier.

10. The power amplifier circuit according to any one of claims 1 to 3, wherein, The matching circuit also has: The third inductor has a first terminal connected to the input terminal of the third amplifier and a second terminal connected to the input terminal of the fourth amplifier.

11. The power amplifier circuit according to any one of claims 1 to 3, wherein, The first wiring, the second wiring, the third wiring, and the fourth wiring are each windings.

12. The power amplifier circuit according to any one of claims 1 to 3, wherein, The first wiring, the second wiring, the third wiring, and the fourth wiring are each transmission lines.

13. A semiconductor device comprising the power amplifier circuit according to any one of claims 1 to 12, wherein, The current-sensing wiring portion is formed along the surface. When the surface is viewed from above, the third wiring and the fourth wiring each have portions that curve away from each other.

14. The semiconductor device according to claim 13, wherein, The third wiring is connected between the first node, which is connected to the second end of the first wiring and the input terminal of the third amplifier, and the low-impedance node. The fourth wiring is connected between the second node, which is connected to the second end of the second wiring and the input terminal of the fourth amplifier, and the low-impedance node. When the surface is viewed from above, the line passing through the midpoint of the first node and the second node and the low-impedance node does not intersect with the third wiring and the fourth wiring except for the low-impedance node.

15. The semiconductor device according to claim 14, wherein, When the surface is viewed from above, the third wiring and the fourth wiring are approximately symmetrical with respect to the lines.

16. The semiconductor device according to claim 13, wherein, The third wiring is connected between the first node, which is connected to the second end of the second wiring and the input terminal of the fourth amplifier, and the low-impedance node. The fourth wiring is connected between the second node, which is connected to the second end of the first wiring and the input terminal of the third amplifier, and the low-impedance node. When the surface is viewed from above, the line passing through the midpoint of the first node and the second node and the low-impedance node intersects the third wiring and the fourth wiring, except for the low-impedance node.

17. The semiconductor device according to claim 14 or 15, wherein, The semiconductor device has the power amplifier circuit as described in claim 4. The plurality of groups includes Group 1 and Group 2. The third and fourth amplifiers in the first group and the third and fourth amplifiers in the second group are arranged sequentially along a straight line.

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