Method for post-treating silicon nitride-based dielectric films with high energy, low dose plasma

Abstract

A method for post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate comprises: positioning the substrate having the silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber; and exposing the silicon nitride (SiN)-based dielectric film to a helium-containing high-energy, low-dose plasma in the processing chamber. The energy of the helium ions in the helium-containing high-energy, low-dose plasma is between 1 eV and 3.01 eV, and the flux density of the helium ions in the helium-containing high-energy, low-dose plasma is between 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds.

Description

Technical Field

[0001] Embodiments of the present disclosure relate generally to flowable gapfill films and processes for fabricating the same, and more particularly to post-treating the flowable films by high energy, low dose plasma. Background Art

[0002] The fabrication of small semiconductor devices, including shallow trench isolation (STI), intermetallic dielectric (IMD) layers, interlayer dielectric (ILD) layers, pre-metal dielectric (PMD) layers, passivation layers, fin field-effective transistors (FinFETs), and others, faces challenges in advanced lithography for patterning nanoscale gate structures. Silicon nitride is one of the primary dielectric materials used in such structures. Void-free filling of gaps and trenches has been achieved by flowable chemical vapor deposition (CVD), in which a dielectric precursor containing silicon and nitrogen in a liquid phase is delivered to the gaps and trenches on a substrate (referred to as a flowable film) and then conventionally cured into a solid-phase silicon nitride (SiN)-based dielectric film by steam annealing, ultraviolet (UV) radiation, hot pressing, and high-temperature sintering. However, such curing processes are limited to a specific depth within high-aspect-ratio features, and therefore the features are not completely filled with the silicon nitride (SiN)-based dielectric film. In some cases, flowable films are treated with standard high-density plasma (HDP) treatments containing high-energy ions to increase the depth of cure. However, such HDP treatments are known to not penetrate silicon nitride (SiN)-based dielectric films and do not increase the cure depth to the depth of high-aspect-ratio features. Consequently, the wet etch selectivity of materials within high-aspect-ratio features (partially comprising silicon nitride) relative to silicon oxide is less than the wet etch selectivity of silicon nitride relative to silicon oxide.

[0003] Therefore, new curing processes are needed to form flowable films that fill high aspect ratio gaps and trenches and have improved mechanical properties relative to silicon oxide, such as improved wet etch rate (WERR, <2:1). Summary of the Invention

[0004] Embodiments described herein generally relate to a method for post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate, comprising: positioning the substrate having the silicon nitride (SiN)-based dielectric film formed thereon in a processing chamber; and exposing the silicon nitride (SiN)-based dielectric film to a helium-containing high-energy, low-dose plasma in the processing chamber. The energy of the helium ions in the helium-containing high-energy, low-dose plasma is between 1 eV and 3.01 eV, and the flux density of the helium ions in the helium-containing high-energy, low-dose plasma is between 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm2 · Between seconds.

[0005] Embodiments of the present disclosure may further provide a method for forming and post-processing a silicon nitride (SiN)-based dielectric film on a surface of a substrate, the method comprising: delivering a dielectric precursor to a substrate disposed in a processing region of a first chamber, the dielectric precursor comprising silicon and nitrogen; providing a radical flux in the processing region of the first chamber; and exposing the delivered dielectric precursor to a high-energy, low-dose plasma containing helium in a second chamber. The energy of the helium ions in the high-energy, low-dose plasma containing helium is between 1 eV and 3.01 eV, and the flux density of the helium ions in the high-energy, low-dose plasma containing helium is between 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] In order that the manner in which the above-described features of the present disclosure may be understood in detail, a more detailed description of the disclosure, briefly summarized above, may be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, as the disclosure may admit to other equally effective embodiments.

[0007] Figure 1 is a flow chart illustrating a method of forming a flowable membrane according to one embodiment.

[0008] Figure 2 is a schematic diagram of a cluster tool according to one embodiment.

[0009] Figure 3A is a schematic diagram of a deposition chamber according to one embodiment.

[0010] Figure 3B is a schematic bottom view of a showerhead according to one embodiment.

[0011] Figure 4 is a schematic diagram of a plasma chamber according to one embodiment.

[0012] Figure 5A and Figure 5B The optical emission spectrum (OES) intensity of a helium-containing plasma according to one embodiment is shown.

[0013] Figure 6 The etching amount of a silicon nitride (SiN)-based dielectric film according to one embodiment is shown.

[0014] For clarity, identical reference numerals have been used, where applicable, to designate identical elements that are common to the figures. Additionally, elements of one embodiment may be advantageously utilized in other embodiments described herein. DETAILED DESCRIPTION

[0015] Embodiments described herein provide methods for post-treating a silicon nitride (SiN)-based dielectric film deposited on a substrate, for example, by flowable chemical vapor deposition (CVD). The SiN-based dielectric film includes silicon-nitrogen (Si–N–Si) bonds. The SiN-based dielectric film deposited on the substrate may contain significant amounts of silicon-hydrogen (Si–H) and nitrogen-hydrogen (N–H) bonds due to Si-H cross-linking limited to the surface of the deposited Si-N dielectric film, resulting in insufficient gap and trench fill. The methods described herein include post-treating the SiN-based dielectric film deposited on the surface of the substrate by exposing the deposited SiN-based dielectric film to a high-energy, low-dose plasma containing helium. The methods described herein can be used to reduce or eliminate Si–H and N–H bonds in the SiN-based dielectric film, thereby densifying the SiN-based dielectric film to a large thickness.

[0016] Embodiments described herein also provide methods for forming silicon nitride (SiN)-based dielectric films by flowable CVD to fill gaps and trenches with high aspect ratios (AR) and small dimensions (e.g., AR ≥ 8). In some embodiments, the silicon nitride (SiN)-based dielectric films formed by flowable CVD are seamless and can fill high AR gaps and trenches using silicon and nitrogen dielectric precursors in liquid phase and a radical-form co-reactant (reactant gas) such as oxygen (O2) or ammonia (NH3).

[0017] Figure 1 is a flow chart illustrating a method 100 for forming a silicon nitride (SiN)-based dielectric film on a surface of a substrate according to one embodiment.

[0018] In block 102, a substrate is positioned in a deposition chamber. For example, the substrate can be a metal substrate (such as aluminum or stainless steel), a semiconductor substrate (such as silicon, silicon-on-insulator (SOI), or gallium arsenide), a glass substrate, or a plastic substrate. The semiconductor substrate can be a patterned substrate at any stage of manufacture or fabrication in the formation of an integrated circuit. The patterned substrate can include gaps, trenches, holes, vias, and the like to be filled with dielectric material.

[0019] In block 104, one or more dielectric precursors in a liquid phase and a carrier gas, such as argon (Ar) or helium (He), are flowed into a deposition chamber via a gas delivery device, such as a dual channel showerhead (DCSH), with the dielectric precursors delivered to a surface of a substrate within the deposition chamber at a flow rate of between about 250 sccm and about 5000 sccm per channel of the DSSH. The surface of the substrate may be maintained at a reduced temperature between about 40° C. and about 150° C., for example, at about 80° C. The pressure of the deposition chamber may be maintained between about 0.5 Torr and about 3.0 Torr.

[0020] In some embodiments, the dielectric precursor is an organosilicon compound including silicon, nitrogen, hydrogen, and chlorine, such as silylamine and its derivatives including trisilylamine (TSA) and disilylamine (DSA), an organosilicon compound including silicon, nitrogen, hydrogen, and oxygen, or a combination thereof.

[0021] In block 106, a plasma may be generated in a remote plasma source (RPS) outside the deposition chamber and flowed into the substrate processing region of the deposition chamber along with a carrier gas (e.g., Ar, He). The plasma may be generated by decomposing a process precursor gas including molecular oxygen (O2), ozone (O3), molecular hydrogen (H2), nitrogen hydrogen compounds (e.g., NH3, N2H4), nitrogen oxides (e.g., NO, NO2, N2O), hydrogen hydroxides (e.g., H2O, H2O2), nitrogen hydrogen hydroxides (e.g., NH4OH), carbon oxides (e.g., CO, CO2), or combinations thereof. In the plasma, radicals containing O*, H*, and / or N*, such as O*, H*, N*, NH3*, N2H4*, NH2*, NH*, N*O*, C3H6*, C2H2*, or combinations thereof, may be activated.

[0022] In some embodiments, radicals activated in the RPS flow into the deposition chamber at a flow rate between about 1 sccm and about 10,000 sccm (referred to as "radical flux").

[0023] In block 108, one or more free radicals (also referred to as reactive gases) in the substrate processing region react with the delivered dielectric precursor to form a silicon nitride (SiN)-based dielectric film. The composition of the formed silicon nitride (Si-N)-based dielectric film can be adjusted by varying the composition of the reactive gas in the free radical flux. To form nitrogen-containing films (such as SiON, SiCON, and SiN films), the reactive gas may be, for example, ammonia (NH3), hydrogen (H2), hydrazine (N2H4), nitrogen dioxide (NO2), or nitrogen (N2). When the reactive gas in the substrate processing region reacts with the delivered dielectric precursor, Si-H and NH bonds (weak bonds) are partially broken and replaced by Si-N, Si-NH, and / or Si-NH2 bonds (strong bonds) to form a silicon nitride (SiN) dielectric film.

[0024] In block 110, the formed silicon nitride (SiN)-based dielectric film is exposed to a high-energy, low-dose plasma containing light ions (i.e., ion species with a small atomic number in the periodic table) such as helium (He), hydrogen (H2), argon (Ar), or nitrogen (N2) in a plasma chamber to cure the formed silicon nitride (SiN)-based dielectric film. The plasma chamber is coupled to two power sources: an RF power source that controls the density of the ion flux (also known as the ion dose) via an induction coil, and an RF power source that controls the ion energy.

[0025] Exposure to a high-energy, low-dose plasma containing light ions results in further crosslinking between compounds having Si-H and N-H bonds in the formed silicon nitride (SiN)-based dielectric film. That is, when Si-H and N-H bonds in adjacent compounds in the formed silicon nitride (SiN)-based dielectric film react with the light ion-containing plasma, the adjacent compounds crosslink by removing Si-H bonds and forming Si-N, Si-NH, and / or Si-NH bonds, thereby curing the corresponding portions of the silicon nitride (SiN)-based dielectric film.

[0026] While not being bound by theory, it is believed that the ion radicals activated in the plasma may physically bombard Si-H bonds within the silicon nitride (SiN)-based dielectric film, thereby breaking the Si-H bonds and causing the formation of Si-N, Si-NH, and / or Si-NH2 bonds. The light ions penetrate the formed silicon nitride (SiN)-based dielectric film to a selected depth without substantially damaging the formed silicon nitride (SiN)-based dielectric film. This treatment by the light ion radicals makes it possible to uniformly perform a nitridation process (i.e., forming Si-N, Si-NH, and / or Si-NH2 bonds) at a depth ranging from 0 nm to 4.2 nm without damaging the formed silicon nitride (SiN)-based dielectric film, while curing by, for example, thermal annealing or UV irradiation is inevitably limited to curing near the exposed surface of the silicon nitride (SiN)-based dielectric film.

[0027] Typically, but not limited to, curing of the dielectric precursor (block 110) is performed in a chamber (plasma chamber) distinct from the deposition chamber, where the dielectric precursor is delivered and reacted with the reactive gas (blocks 104-108). Typically, the set of operations (e.g., blocks 104-108) may be repeated for multiple cycles to form an overall thicker film.

[0028] Embodiments of the deposition system may be incorporated into a larger fabrication system for producing integrated circuit wafers. Figure 2 One such cluster tool 1001 is shown, including processing chambers 1008a-f, according to one embodiment. Figure 2 1 , a pair of front opening unpacking units (FOUPs) 1002 supply substrates (e.g., 300 mm diameter wafers) which are received by a robot 1004 and positioned in a low pressure holding region 1006. A second robot 1010 can be used to transport substrates between the low pressure holding region 1006 and the processing chambers 1008a-f.

[0029] Figure 3A FIG2 is a schematic diagram of a processing chamber 300 having a chamber body 302 and a lid assembly 304 according to one embodiment. The lid assembly 304 generally includes a remote plasma source (RPS) 306, a lid 308, and a dual channel showerhead (DCSH) 310. The RPS 306 can process process precursor gases provided from a process precursor gas source 312. The plasma formed in the RPS 306 can then be delivered to a chamber plasma region 318 via a gas inlet assembly 314 and a baffle 316 coupled to the lid 308. A carrier gas (e.g., Ar, He) can be delivered to the chamber plasma region. An insulating ring 320 is disposed between the lid (i.e., the conductive top portion) 308 and the dual channel showerhead (DCSH) 310, which allows an AC potential to be applied to the lid 308 relative to the DCSH 310.

[0030] The DCSH 310 is disposed between the chamber plasma region 318 and the substrate processing region 324 and allows radicals activated in the plasma present in the chamber plasma region 318 to enter the substrate processing region 324 through a plurality of through holes 326. The flow of radicals (radical flux) is Figure 3A 318 is indicated by a solid arrow "A". A substrate 328 is disposed on a substrate support 330, which is disposed within the substrate processing region 324. The DCSH 310 also has one or more hollow volumes 332 that can be filled with a dielectric precursor provided by a precursor source 334. The dielectric precursor enters the substrate processing region 324 from the one or more hollow volumes 332 through apertures 336 and bypasses the chamber plasma region 318. The flow of the dielectric precursor is controlled by Figure 3A 324 . The exhaust ring 338 is used to uniformly evacuate the substrate processing region 324 using an exhaust pump 340. The DCSH 310 may be thicker than the length of the minimum diameter of the through-hole 326. The length of the minimum diameter of the through-hole 326 may be limited by forming a larger diameter portion of the through-hole 326 partially through the DCSH 310 to maintain the flow of the radical flux from the chamber plasma region 318 to the substrate processing region 324. In some embodiments, the length of the minimum diameter of the through-hole 326 may be of the same order of magnitude as or less than the minimum diameter of the through-hole 326.

[0031] In some embodiments, Figure 2 A pair of processing chambers (e.g., 1008c-d) in a process chamber (referred to as a dual chamber) may be used to deposit a dielectric precursor on a substrate. Each of the processing chambers (e.g., 1008c-d) may have Figure 3A Depicted is a cross-sectional structure of the processing chamber 300. The flow rate for each channel of the DCSH described above corresponds to the flow rate of each (eg, 1008c-d) entering the chamber via the corresponding DCSH 310.

[0032] Figure 3B is a schematic bottom view of a DCSH 310 according to one embodiment. The DCSH 310 can deliver a flux of radicals and a carrier gas present within the chamber plasma region 318 via through-holes 326 .

[0033] In some embodiments, the number of through-holes 326 may be between about 60 and about 2000. Through-holes 326 may have a circular shape or a variety of shapes. In some embodiments, the minimum diameter of through-holes 326 may be between about 0.5 mm and about 20 mm, or between about 1 mm and about 6 mm. The cross-sectional shape of through-holes 326 may be conical, cylindrical, or a combination of the two shapes. In some embodiments, the number of apertures 336 may be between about 100 and about 5000, or between about 500 and about 2000, to allow for the introduction of dielectric precursors into substrate processing region 324. The diameter of apertures 336 may be between about 0.1 mm and about 2 mm.

[0034] Figure 4 FIG4 is a schematic diagram of a plasma chamber 400 having a chamber body 402 and a lid assembly 404 according to one embodiment. The lid assembly 404 includes a gas delivery assembly 406 and a lid 408. The lid 408 has an opening 410 to allow one or more process precursor gases to enter. The gas delivery assembly 406 is disposed above the lid 408 via the opening 410. The gas delivery assembly 406 can be connected to a gas source 412 via a gas inlet 414 to supply one or more process precursor gases into a substrate processing region 424. A substrate 428 is disposed on a substrate support 430, which is disposed within the substrate processing region 424 and coupled to a bias power source (not shown). The one or more process precursor gases can exit the substrate processing region 424 using an exhaust ring 438 and an exhaust pump 440.

[0035] In the lid assembly 404, an inner coil 442, an intermediate coil 444, and an outer coil 446 are disposed above the lid 408. The inner coil 442 and the outer coil 446 are coupled to an RF power source 448 via a matching circuit 450. Power applied from the RF power source 448 to the outer coil 446 is inductively coupled via the lid 408 to generate a plasma from a process precursor gas provided from the gas source 412 within the substrate processing region 424. The RF power source 448 can provide current at different frequencies to control the plasma density (i.e., the number of ions per cubic centimeter (cc)) in the plasma, and thus control the density of the ion flux (ions / cm 2 · seconds). The bias power source controls the voltage between the substrate 428 and the plasma, and thus controls the energy and directionality of the ions. Thus, both the ion flux and the ion energy can be controlled independently.

[0036] The heater assembly 452 may be disposed on the cover 408. The heater assembly 452 may be secured to the cover 408 by clamping members 454,456.

[0037] The surface of the substrate may be maintained at a temperature between about 100° C. and about 400° C. The pressure of the plasma chamber may be maintained between about 5 mTorr and 500 mTorr.

[0038] Hereinafter, experimental measurements of processing parameters for processing deposited films are provided as examples to illustrate aspects of the embodiments of the present disclosure described herein. The examples are not intended to limit the scope of the present disclosure.

[0039] In experimental measurements, a silicon nitride (SiN)-based dielectric film formed according to the above-described method 100 was exposed to a high-energy, low-dose plasma containing helium at a pressure between 15 mT and 150 mT for a duration between about 2 minutes and 3.5 minutes. The power applied to the electrode disposed within the substrate support by the bias power source (referred to as the bias power) was varied between 100 W and 700 W to change the energy of the helium ions (i.e., ions generated in the plasma) that bombarded the surface of the substrate due to the applied bias power. The power applied to the RF power source (in this example, an ICP plasma source) was varied between 0 kW and 2.7 kW to change the density of the helium ions generated in the plasma (i.e., lower power corresponds to a lower flux density). The formed silicon nitride (SiN)-based dielectric film was bombarded by the helium ions and densified (i.e., nitrided) to a density of 100 Å / s in each cycle. and The following summarizes some of the process parameters that may be used in one or more of the embodiments described herein.

[0040]

[0041] Figure 5A The optical emission spectrum (OES) intensity of the helium-containing plasma measured between wavelengths of 200 nm and 900 nm at RF power source powers (referred to as RF source power) of (i) 2.7 kW (see line 591) and (ii) 700 W (see line 592) is shown. Figure 5AThe main emission lines in the spectrum show metastable helium (He) atoms (e.g., 388.8 nm, 402.6 nm, 447.1 nm, 501.5 nm, 587.5 nm, 667.8 nm, 706.5 nm, and 728.1 nm). In addition, the reactive species detected associated with nitrogen are excited nitrogen molecules, which have a light emission spectrum wavelength between 300 and 400 nm. At 700 W RF source power (see line 591), the OES intensity corresponding to metastable helium (He) atoms is 10 to 1000 times smaller than the OES intensity at 2.7 kW RF source power (see line 592). Therefore, at 700 W RF source power, the plasma density of the plasma containing helium ions is 10 to 1000 times smaller.

[0042] Figure 5B The OES intensity of the helium-containing plasma is shown at various bias powers (such as between 100 W and 500 W) and a pressure of 150 mTorr. The RF source power is maintained at 0 W, and thus the helium-containing plasma is generated by the application of the bias applied to the substrate support electrode. Figure 5B It can be seen that corresponding to Figure 5A The OES intensity of the main emission line in increases linearly with the applied bias power and, therefore, with the helium ion energy. Thus, in the described example, a low RF source power (e.g., 700 W) and a high bias power (e.g., 100-500 W) are provided to the high energy, low dose plasma.

[0043] Helium-containing plasmas (where the plasma density and the energy of the helium ions can be controlled as described above) can be used to densify formed deposited layers, such as silicon nitride (SiN)-based dielectric films. A helium-containing plasma with a low plasma density and containing high-energy helium ions bombarding the substrate surface can penetrate deeper into the silicon nitride (SiN)-based dielectric film without causing significant damage to the film due to excessive bombardment of the film produced in higher plasma density processes and the use of higher atomic mass gases typically used in conventional plasma processes. A helium-containing plasma with a low plasma density and containing high-energy helium ions produces increased thickness densification in the formed silicon nitride (SiN)-based dielectric film with less overall damage. For example, a flowable film containing silicon and nitride deposited within a high aspect ratio feature may be treated with such a high energy, low dose helium-containing plasma to densify the flowable film to form a silicon nitride (SiN)-based dielectric film that is densified to an increased depth within the high aspect ratio feature without significantly damaging the formed flowable film layer.

[0044] Figure 6The amount of silicon nitride (SiN)-based dielectric film removed using a dilute HF (DHF) solution prepared by diluting 1% HF with deionized water for 5 minutes is shown. The silicon nitride (SiN)-based dielectric film was formed according to the above-described method 100 and then exposed to a helium-containing plasma at RF source powers of 2.7 kW (high dose) and 700 W (low dose), at bias powers of 300 W (low energy) and 700 W (high energy), and at pressures of 150 mTorr and 300 mTorr. As shown from Figure 6 It can be seen that lower dose (i.e., at lower RF source power) and higher energy (i.e., at higher bias power) of helium ions in the plasma increase the amount of etching of the silicon nitride-based dielectric film, which indicates that the silicon nitride (SiN)-based dielectric film formed has a deeper nitride (densified) portion and the etching rate is increased to Lower pressure also results in higher energy of the helium ions in the plasma and thus increases the etch rate.

[0045] As described above, post-treatment of a silicon nitride (SiN)-based flowable film with a high-energy, low-dose plasma containing helium can increase the nitridation depth and improve the wet etch rate (WERR) without damaging the flowable film. It should be noted that the specific exemplary embodiments described above are merely some possible examples of silicon nitride (SiN)-based dielectric films that can be post-treated with a high-energy, low-dose plasma according to the present disclosure, and are not limited to possible configurations, specifications, deposition methods, etc. of silicon nitride (SiN)-based dielectric films. For example, post-treatment with a high-energy, low-dose plasma containing light ions can be applied to any doped or undoped SiCOH, SiCON, SiO, and SiN films.

[0046] While the foregoing is directed to particular embodiments, other and further embodiments may be devised without departing from the basic scope thereof, and the scope of the same is determined by the claims that follow.

Claims

1. A method for post-treating a silicon nitride (SiN)-based dielectric film formed on a surface of a substrate, comprising: positioning a substrate in a processing chamber, the substrate having a silicon nitride (SiN)-based dielectric film formed on the substrate; as well as exposing the silicon nitride (SiN)-based dielectric film to a helium-containing plasma in the processing chamber, wherein The energy of the plurality of helium ions in the helium-containing plasma is between 1 eV and 3.01 eV, and The flux density of the helium ions in the helium-containing plasma is 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds.

2. The method of claim 1, wherein the silicon nitride (SiN)-based dielectric film comprises Si—H bonds.

3. The method of claim 1, wherein the silicon nitride (SiN)-based dielectric film includes NH bonds.

4. The method of claim 1, wherein the substrate is at a temperature between 10°C and 200°C during exposure of the silicon nitride (SiN)-based dielectric film to the helium-containing plasma.

5. The method of claim 1, wherein the substrate is at a pressure between 15 mTorr and 300 mTorr during exposure of the silicon nitride (SiN)-based dielectric film to the helium-containing plasma.

6. The method of claim 1, wherein the substrate is made of a material selected from the group consisting of metal, semiconductor, and plastic.

7. A method for post-treating a silicon-based film formed on a surface of a substrate, comprising: positioning a substrate in a processing chamber, the substrate having a silicon-based film formed thereon; as well as exposing the silicon-based film to a helium-containing plasma in the processing chamber, wherein The energy of the plurality of helium ions in the helium-containing plasma is between 1 eV and 3.01 eV, and The flux density of the helium ions in the helium-containing plasma is 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds. The method of claim 7 , wherein the silicon-based film comprises silicon nitride (SiN).

9. The method of claim 7, wherein the silicon-based film includes Si-H bonds.

10. The method of claim 7, wherein the silicon-based film includes NH bonds.

11. The method of claim 7, wherein the substrate is at a temperature between 10°C and 200°C during exposure of the silicon-based film to the helium-containing plasma.

12. The method of claim 7, wherein the substrate is at a pressure between 15 mTorr and 300 mTorr during the exposure of the silicon-based film to the helium-containing plasma.

13. The method of claim 1, wherein the substrate is made of a material selected from the group consisting of metal, semiconductor, and plastic.

14. A method of forming and post-treating a silicon nitride (SiN)-based dielectric film on a surface of a substrate, the method comprising: delivering a dielectric precursor onto a substrate disposed in a processing region of the first chamber, the dielectric precursor comprising silicon and nitrogen; providing a free radical flux in the processing region of the first chamber; as well as The delivered dielectric precursor is exposed to a helium-containing plasma in a second chamber, wherein The energy of the plurality of helium ions in the helium-containing plasma is between 1 eV and 3.01 eV, and The flux density of the helium ions in the helium-containing plasma is 5×10 15 ions / cm 2 · second and 1.37×10 16 ions / cm 2 · Between seconds.

15. The method of claim 14, wherein the substrate is at a temperature between 10°C and 200°C during exposure of the silicon nitride (SiN) based dielectric film to the helium containing plasma.

16. The method of claim 14, wherein the substrate is at a pressure between 15 mTorr and 300 mTorr during exposure of the silicon nitride (SiN)-based dielectric film to the helium-containing plasma.

17. The method of claim 14, wherein the substrate is made of a material selected from the group consisting of metal, semiconductor, and plastic.

18. The method of claim 14, wherein the dielectric precursor is an organosilicon compound comprising silicon, nitrogen, hydrogen, and chlorine.

19. The method of claim 14, wherein the dielectric precursor is an organosilicon compound comprising silicon, nitrogen, hydrogen, and oxygen.

20. The method of claim 14, wherein the radical flux comprises a radical gas selected from the group consisting of oxygen (O2), ozone (O3), water (H2O), ammonia (NH3), hydrazine (N2H4), nitrogen dioxide (NO2), nitrogen (N2), propylene (C3H6), and acetylene (C2H2).

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