A micromechanical capacitance compensation structure and a method for producing the same

By setting a composite layer capacitor compensation structure with a high dielectric constant material on the inner side of the capacitor plate, the asymmetry problem of the differential capacitor structure is solved, enabling flexible adjustment of the capacitor and preventing the plates from sticking together, thus improving the performance of the capacitor sensing device.

CN115259069BActive Publication Date: 2025-11-07WUXI WEIGAN SEMICON CO LTD
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Patent Information

Application Number
CN202210724120.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-06-24
Publication Date
2025-11-07
Estimated Expiration
2042-06-24

AI Technical Summary

Technical Problem

In the prior art, the capacitors on both sides of the differential capacitor structure are asymmetrical, making it difficult to flexibly adjust the capacitor by changing the plate area or spacing. Moreover, the existing compensation structures are mostly micro-protrusion structures made of a single material, which are only used to prevent adhesion during movement.

Method used

A composite layer capacitor compensation structure, consisting of high dielectric constant materials of different sizes, materials, and densities, is set on the inner side of the capacitor plates. This structure includes pillar, cone, platform, or inverted crater shapes, and is used to adjust the capacitance. It is prepared by deposition, etching, and corrosion processes.

Benefits of technology

This allows for flexible adjustment of the capacitance without changing the electrode area and spacing, achieving a symmetrical capacitor structure, improving the sensitivity and signal-to-noise ratio of the capacitive sensing device, and preventing electrode adhesion.

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Abstract

The present application relates to a kind of micromechanical capacitance compensation structure and its preparation method, the capacitance compensation structure is in the shape of cylinder, cone, platform or inverted crater, be arranged in capacitor plate inside, for changing capacitance.When being arranged below the plate, recess is formed by depositing sacrificial layer and patterning on the lower plate structure layer;Depositing thin film material, etching to remove the surface medium thin film material of sacrificial layer, retaining the medium material in recess;Depositing capacitor upper plate structure layer thin film material, and patterning is formed release hole;After releasing the sacrificial layer through release hole, the compensation capacitance structure is obtained.When being arranged above the plate, convex structure is formed by etching to form thin film material on the lower plate structure layer of capacitor;Depositing and planarizing sacrificial layer;Depositing capacitor upper plate and patterning is formed release hole;After releasing the sacrificial layer through release hole, the compensation capacitance structure is obtained.The present application realizes capacitance matching and compensation, especially for differential capacitance structure, reaches the effect of upper and lower symmetrical capacitance structure.
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